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JPH043128A - Formation of partial polarization inversion region - Google Patents

Formation of partial polarization inversion region

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Publication number
JPH043128A
JPH043128A JP2106071A JP10607190A JPH043128A JP H043128 A JPH043128 A JP H043128A JP 2106071 A JP2106071 A JP 2106071A JP 10607190 A JP10607190 A JP 10607190A JP H043128 A JPH043128 A JP H043128A
Authority
JP
Japan
Prior art keywords
substrate
comb
polarization
region
full
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2106071A
Other languages
Japanese (ja)
Inventor
Ippei Sawaki
一平 佐脇
Kazunori Miura
和則 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2106071A priority Critical patent/JPH043128A/en
Publication of JPH043128A publication Critical patent/JPH043128A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/355Non-linear optics characterised by the materials used
    • G02F1/3558Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/37Non-linear optics for second-harmonic generation
    • G02F1/377Non-linear optics for second-harmonic generation in an optical waveguide structure
    • G02F1/3775Non-linear optics for second-harmonic generation in an optical waveguide structure with a periodic structure, e.g. domain inversion, for quasi-phase-matching [QPM]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/353Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3544Particular phase matching techniques
    • G02F1/3548Quasi phase matching [QPM], e.g. using a periodic domain inverted structure

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the large output intensity of a second harmonic wave by shorting comb-shaped metallic patterns and the full-surface metallic films formed on the other surface of a piezoelectric substrate and heating the piezoelectric substrate to the temp. just below the Curie point, then immediately cooling the substrate. CONSTITUTION:The full-surface metallic films 20 and 3 consisting of vacuum vapor deposited films of Au are formed on both the front and rear surfaces of the substrate. A metallic film 4 for shorting which consists of the Au film shorting the full-surface metallic films 20 and 3 is formed on the side face. Further, the one full-surface metallic film of the substrate is subjected to photoetching to a comb tooth shape to form the comb-shaped metallic patterns 2. The substrate is cooled to room temp. immediately after the substrate is heated to the temp. just below the Curie point to generate polarization inversion by the electric field generated by a pyroelectric effect in the surface region between the comb teeth of the comb-shaped metallic patterns 2. The large second harmonic light output is obtd. in this way.

Description

【発明の詳細な説明】 〔概要] 部分的分極反転領域の形成方法に関し、圧電体基板上に
光損傷が小さく低損失の第2高調波発生用の分極反転型
光導波路を作成するための部分的分極反転領域の形成方
法を改善することを目的とし、 圧電体基板の一方の面に形成した櫛型金属パターンと、
前記圧電体基板の他方の面に形成した全面金属膜とを短
絡させ、前記圧電体基板をキューリ点直下まで加熱した
あと、直ちに冷却することによって部分的分極反転領域
の形成方法を構成する。また、前記圧電体基板の少なく
とも前記櫛型金属パターンが形成される面にプロトン交
換領域を形成し、より効果を高めるように構成する。
[Detailed Description of the Invention] [Summary] Regarding a method for forming a partially polarization-inverted region, a part for creating a polarization-inverted optical waveguide for second harmonic generation with little optical damage and low loss on a piezoelectric substrate. With the aim of improving the method of forming polarization inversion regions, we developed a comb-shaped metal pattern formed on one side of a piezoelectric substrate,
The method for forming a partially polarization inverted region is configured by short-circuiting the piezoelectric substrate with a metal film formed on the other surface of the entire surface, heating the piezoelectric substrate to just below the Curie point, and then immediately cooling it. Further, a proton exchange region is formed on at least the surface of the piezoelectric substrate on which the comb-shaped metal pattern is formed, so as to further enhance the effect.

[産業上の利用分野〕 本発明は、光損傷に強く変換効率が高い光導波路型第2
高調波発生素子用の分極反転型光導波路を作製するため
の部分的分極反転領域の形成方法に関する。
[Industrial Application Field] The present invention is directed to an optical waveguide type second waveguide which is resistant to optical damage and has high conversion efficiency.
The present invention relates to a method for forming a partially polarized region for producing a polarized optical waveguide for a harmonic generating element.

近年、レーザ、とくに、半導体レーザ(LD)がレーザ
プリンタやレーザスキャナ、あるいは、光ディスクなど
の光源として広く用いられるようになってきた。しかし
、その一方で記憶容量の拡大や取り扱いの利便のために
短波長化(たとえば、赤外光から可視光へ)に対する要
求が強くなっている。半導体レーザの短波長発振化の開
発も進められてはいるが、現在の技術レベルではその発
振波長を600nm以下にすることはかなり困難であり
、その他の技術、たとえば、第2高調波発生(SHG)
による短波長のコヒーレント光が得られるデバイス、と
くに、それに用いる分極反転型光導波路の作成技術の開
発が強く求められている。
In recent years, lasers, particularly semiconductor lasers (LDs), have come to be widely used as light sources for laser printers, laser scanners, optical discs, and the like. However, on the other hand, there is a growing demand for shorter wavelengths (for example, from infrared light to visible light) to increase storage capacity and make handling easier. Although the development of short wavelength oscillation in semiconductor lasers is progressing, it is quite difficult to reduce the oscillation wavelength to 600 nm or less at the current technological level, and other technologies, such as second harmonic generation (SHG), are currently being developed. )
There is a strong demand for the development of devices that can obtain short-wavelength coherent light, especially techniques for creating polarization-inverted optical waveguides for use in such devices.

〔従来の技術〕[Conventional technology]

従来、レーザ光の第2高調波発生素子としてはバルクの
非線形光学結晶にレーザ光を通すものがよく知られてい
る。
Conventionally, as a second harmonic generation element for laser light, one that passes laser light through a bulk nonlinear optical crystal is well known.

たとえば、強誘電体結晶であるLiNbO5をブロック
にカットし両面を光学研磨してレーザ光の人出射面とし
、一方の側から角周波数ωのレーザ光を入射させると、
反対側から2倍の角周波数2ωの第2高調波が発生する
。この時の変換効率(η、HG−P!ω/Pω)は、真
空の誘電率と透磁率をそれぞれε。、μ。、結晶の非線
形光学定数をd、結晶長を!、基本波と高調波に対する
屈折率をnω。
For example, if LiNbO5, which is a ferroelectric crystal, is cut into a block, both sides are optically polished to form a laser beam exit surface, and a laser beam with an angular frequency ω is input from one side.
A second harmonic with twice the angular frequency 2ω is generated from the opposite side. The conversion efficiency (η, HG-P!ω/Pω) at this time is the permittivity and magnetic permeability of vacuum, respectively. ,μ. , the nonlinear optical constant of the crystal is d, and the crystal length is! , the refractive index for the fundamental wave and harmonics is nω.

n2ω、基本波と高調波の伝播定数差をΔk、ビーム断
面積をAとしたと下記(1)式で表される。
When n2ω, the difference in the propagation constant between the fundamental wave and the harmonics is Δk, and the beam cross-sectional area is A, it is expressed by the following equation (1).

ηsHc、 =2(μo/εo)”2(ω2d2j22
/nzω−n ω)(Pω/A) [sin”(Δkf
、/2)/(ΔkL’2)”]第2高調波出力P2ωは
(1)式かられかるように5in2曲線の出力特性を示
す。このように、第2高調波出力P2ωが5in2曲線
特性で周期的に変動するのはnωとnlωが異なるため
である。すなわち、屈折率差のため各点で発生した第2
高調波の位相が揃わず、位相ずれが2πになる距離を周
期として第2高調波出力が変動することになる。通常の
結晶では屈折率の波長分散のためnωとn2ωの差が大
きく、シたがって、!、(コヒーレント長)が非常に小
さく、第2高調波出力P2ωも非常に小さくなってしま
う。これを解決するために位相整合を取る方法が提案さ
れている。
ηsHc, =2(μo/εo)”2(ω2d2j22
/nzω−n ω)(Pω/A) [sin”(Δkf
, /2)/(ΔkL'2)"] The second harmonic output P2ω shows the output characteristic of the 5in2 curve as seen from equation (1). In this way, the second harmonic output P2ω shows the output characteristic of the 5in2 curve. The reason for the periodic fluctuation is that nω and nlω are different. In other words, the second wave generated at each point due to the difference in refractive index
The phases of the harmonics are not aligned, and the second harmonic output fluctuates with a period of distance at which the phase shift becomes 2π. In normal crystals, the difference between nω and n2ω is large due to the wavelength dispersion of the refractive index, and therefore,! , (coherence length) are very small, and the second harmonic output P2ω is also very small. To solve this problem, a method of achieving phase matching has been proposed.

たとえば、第2高調波光λ2の異常光の屈折率n、と基
本波光ハの常光の屈折率n0とを一致させるようにレー
ザ光を入射させる。いわゆる、位相整合条件を満足させ
て大きな第2高調波出力を得る方法である〔多用、神谷
:光エレクトロニクスの基礎、 pp199〜200.
1974 (丸善刊)参照〕。
For example, the laser beam is made to enter so that the refractive index n of the extraordinary light of the second harmonic light λ2 and the refractive index n0 of the ordinary light of the fundamental wave light C are made to match. This is a method of obtaining a large second harmonic output by satisfying the so-called phase matching condition [Taiyo, Kamiya: Fundamentals of Optoelectronics, pp199-200.
1974 (published by Maruzen)].

第5図は第2高調波出力特性を示す図(位相整合が取れ
ている場合)で、縦軸は第2高調波出力P2ωを、横軸
は結晶長lである。図中、■の破線は上記に説明した第
2高調波光λ2の屈折率と基本波光λ1の屈折率を一致
させて、第2高調波出力P2ωが結晶長iが大きくなる
に従って増大するようにしている場合である。しかし、
以上に述べたバルク結晶型の場合、位相整合条件を満足
しかつ、非線形光学定数も大きい結晶が得られていない
ため基本波の光強度を大きくしなければならず、半導体
レーザのような低パワーの光源に対し7ては実用化され
るに至っていない。
FIG. 5 is a diagram showing the second harmonic output characteristics (when phase matching is achieved), where the vertical axis is the second harmonic output P2ω, and the horizontal axis is the crystal length l. In the figure, the broken line (■) indicates the refractive index of the second harmonic light λ2 and the refractive index of the fundamental wave light λ1 explained above, so that the second harmonic output P2ω increases as the crystal length i increases. This is the case. but,
In the case of the bulk crystal type described above, a crystal that satisfies the phase matching condition and also has a large nonlinear optical constant has not been obtained, so the light intensity of the fundamental wave must be increased, and low power 7 has not yet been put into practical use as a light source.

一方、最近になって光導波路型の素子を用い。On the other hand, recently optical waveguide type elements have been used.

たとえば、異常光の屈折率0.曲線上で位相整合を行わ
せる(したがって、基本波と第2高調波光の屈折率は異
なる)ことによって、大きな非線形光学定数を利用する
ことができ、その結果、大きな変換効率(ηSMG )
が得られる極めて有力な方法が提案されている。
For example, the refractive index of extraordinary light is 0. By phase matching on the curve (thus, the refractive indices of the fundamental and second harmonic light are different), large nonlinear optical constants can be exploited, resulting in large conversion efficiencies (ηSMG).
An extremely effective method has been proposed to obtain this.

第6図は光導波路型第2高調波発生素子の例を示す図で
、同図(イ)は斜視図、同図(ロ)はXX′断面図であ
る。
FIG. 6 is a diagram showing an example of an optical waveguide type second harmonic generation element, in which (a) is a perspective view and (b) is a cross-sectional view of XX'.

図中、1は基板で、たとえば、LiNb0:+の最も大
きな非線形光学定数が得られる入射方向と偏波方向を取
れるように+2面を光学研磨した基板で、100は基板
l上に形成された分極反転型光導波路である。同図(ロ
)に示したごとく、たとえば、基板1を上向きの方向に
強誘電体分極を揃え、光導波路の部分に等間隔に、たと
えば1周期へで分極が下向きのある深さを持った領域5
0を形成すると、上向きの分極領域と下向きの分極領域
50とが等間隔に並んだ分極反転型光導波路100が構
成される。
In the figure, 1 is a substrate, for example, a substrate whose +2 surface is optically polished so that the incident direction and polarization direction can be set to obtain the largest nonlinear optical constant of LiNb0:+, and 100 is a substrate formed on the substrate l. It is a polarization-inverted optical waveguide. As shown in the same figure (b), for example, the substrate 1 is aligned with ferroelectric polarization in the upward direction, and the polarization is arranged at equal intervals in the optical waveguide part, for example, to a certain depth that the polarization is downward in one period. Area 5
0, a polarization-inverted optical waveguide 100 is constructed in which upward polarization regions and downward polarization regions 50 are arranged at equal intervals.

いま、たとえば、左側から角周波数ωのレーザ光を分極
反転型光導波路100に入射させ、右側から出射させる
と次式を満足するときに位相整合条件が満たされ、大き
い第2高調波出力が得られることが知られている(J、
 A、Ara+s trong、 et、al、 、 
Phys。
Now, for example, if a laser beam with an angular frequency ω is made to enter the polarization-inverted optical waveguide 100 from the left side and exit from the right side, the phase matching condition will be satisfied when the following equation is satisfied, and a large second harmonic output will be obtained. It is known that (J,
A, Ara+strong, et, al, ,
Phys.

Rev、vol、127.p1918.1962)。Rev, vol, 127. p1918.1962).

Δ=2πm/[β1゜。(2ω)−2β1゜。(ω)]
−・−(2)こ−で、β1゜。(2ω)は分極反転型光
導波路100に対する第2高調波の伝播定数、β1゜。
Δ=2πm/[β1°. (2ω)−2β1°. (ω)]
−・−(2) Here, β1°. (2ω) is the propagation constant of the second harmonic for the polarization-inverted optical waveguide 100, β1°.

(ω)は同じく基本波の伝播定数2mは正の奇数である
Similarly, the propagation constant 2m of the fundamental wave (ω) is a positive odd number.

なお、上式を屈折率を用いて表すと、 A=λ。m/2I n+oo(2ω) −n+oo(ω
)1−(3)となる。
In addition, when the above formula is expressed using a refractive index, A=λ. m/2I n+oo(2ω) −n+oo(ω
)1-(3).

こ\で、λ。は基本波の真空中の波長、n1O0(2ω
)は分極反転型光導波路100に対する第2高調波の屈
折率+n1O0(ω)は同じく基本波の屈折率9mは正
の奇数である。
Here, λ. is the wavelength of the fundamental wave in vacuum, n1O0(2ω
) is the refractive index of the second harmonic +n1O0(ω) for the polarization-inverted optical waveguide 100, and the refractive index of the fundamental wave, 9m, is a positive odd number.

第5図に示した■の実線はこの場合の理想的な第2高調
波出力特性の例を示したもので、結晶長lと共に第2高
調波出力P2ωが増加し、しかも、大きな非線形定数を
用いているのでノ\ルク結晶型に比較して大巾に変換効
率が向上しでいる。
The solid line (■) shown in Fig. 5 shows an example of the ideal second harmonic output characteristic in this case, where the second harmonic output P2ω increases with the crystal length l, and also has a large nonlinear constant. The conversion efficiency has been greatly improved compared to the Norck crystal type.

上記のごとき分極反転型光導波路100を作製するには
、部分的分極反転領域、たとえば、前記第6図の下向き
の分極領域50を形成しなければならない。そのような
方法としては2つの方法がよく知られている。
In order to fabricate the poled optical waveguide 100 as described above, it is necessary to form a partially polarized region, for example, the downward polarized region 50 in FIG. 6 above. Two such methods are well known.

第1の方法は基板100上に適当なマスクをつけて高温
に加熱すると露出面のLiが外部に拡散しその部分の分
極が反転する現象を用いる。しかし、この場合分極反転
領域の深さは高々1μm程度に過ぎず、また、その部分
の屈折率も変化し光導波路として実用化しがたい欠点が
ある。
The first method uses a phenomenon in which when a suitable mask is placed on the substrate 100 and the substrate is heated to a high temperature, Li on the exposed surface is diffused to the outside and the polarization of that portion is reversed. However, in this case, the depth of the polarization inversion region is only about 1 μm at most, and the refractive index of that portion also changes, making it difficult to put it to practical use as an optical waveguide.

第2の方法は分極反転領域となる部分にTiを被着した
のち熱処理すると、その部分の分極が反転する現象を用
いており、その深さは数μmにまで達することが可能で
実用的な光導波路が作製されると期待されている。
The second method uses the phenomenon that when Ti is deposited on the part that will become the polarization inversion region and then heat-treated, the polarization in that part is reversed, and the depth can reach several μm, making it practical. It is expected that optical waveguides will be fabricated.

第7図は従来の部分的分極反転領域の形成方法の例を示
す図で、その主な工程順を図示したものである。
FIG. 7 is a diagram showing an example of a conventional method for forming a partially polarization inverted region, and illustrates the main process order.

工程(1):単一分域化された強誘電体結晶、たとえば
、LiNbO3の+2面を光学研磨した基板1を作成す
る。
Step (1): A substrate 1 is prepared by optically polishing the +2 surface of a single-domain ferroelectric crystal, for example, LiNbO3.

工程(2):前記処理基板上に厚さ300nmのTi膜
30を真空蒸着する。
Step (2): A 300 nm thick Ti film 30 is vacuum deposited on the treated substrate.

工程(3):前記処理基板を分極反転領域50になる部
分のTiが残るようにホトエツチング処理してTi薄膜
パターン30”を形成する。
Step (3): The processed substrate is photoetched so that Ti remains in the portion that will become the polarization inversion region 50 to form a Ti thin film pattern 30''.

工程(4):前記処理基板を約1000°Cで加熱処理
してTiを拡散し、Ti拡散領域30”を形成すると、
その部分の基板1の表面部分が分極反転する。
Step (4): When the treated substrate is heat-treated at about 1000°C to diffuse Ti and form a Ti diffusion region 30'',
The polarization of that portion of the surface of the substrate 1 is reversed.

工程(5):前記処理基板を適当な処理液で処理し残留
しているかもしれないTiを必要に応じて除去洗浄すれ
ば、分極反転型光導波路の分極反転領域50となる部分
的分極反転領域50が形成される。
Step (5): If the treated substrate is treated with an appropriate treatment liquid and any remaining Ti is removed and cleaned as necessary, partial polarization inversion will be achieved, which will become the polarization inversion region 50 of the polarization inversion type optical waveguide. A region 50 is formed.

〔発明が解決しようとした課題〕[Problem that the invention sought to solve]

しかし、上記従来の方法で形成された部分的分極反転領
域50は、Tiを含有しているために、すでによく知ら
れているようにレーザ光を通したとき。
However, since the partially polarized region 50 formed by the conventional method contains Ti, as is already well known, when the partially polarized region 50 is passed through a laser beam.

いわゆる、光損傷の闇値が下がり、さらに屈折率も変化
してしまうために、それを構成部分とした分極反転型光
導波路は、たとえば、第5図の■の点線で示したごとく
、第2高調波光の出力強度が頭打ちとなって増加せず、
また、屈折率変動に基づく光散乱などによる損失増加も
加わるなど、実用上大きな問題がありその解決が必要で
あった。
Because the so-called dark value of optical damage decreases and the refractive index also changes, a polarization-inverted optical waveguide that uses this as a component is, for example, as shown by the dotted line (■) in Figure 5. The output intensity of harmonic light reaches a plateau and does not increase.
In addition, there are serious practical problems, such as increased loss due to light scattering due to refractive index fluctuations, which need to be solved.

〔課題を解決するための手段] 上記の課題は、圧電体基板1の一方の面に形成した櫛型
金属パターン2と、前記圧電体基板1の他方の面に形成
した全面金属膜3とを短絡させ、前記圧電体基板1をキ
ューリ点色下まで加熱したあと、直ちに冷却することを
特徴とした部分的分極反転領域の形成方法により解決す
ることができる。さらに、前記圧電体基板1の少なくと
も前記櫛型金属パターン2が形成される面にプロトン交
換領域6を形成しておけばより安定した部分的分極反転
領域を形成することができる。
[Means for Solving the Problem] The above problem is solved by combining the comb-shaped metal pattern 2 formed on one surface of the piezoelectric substrate 1 and the entire surface metal film 3 formed on the other surface of the piezoelectric substrate 1. This problem can be solved by a method for forming a partially polarized region, which is characterized in that the piezoelectric substrate 1 is short-circuited, heated to below the Curie point color, and then immediately cooled. Furthermore, if a proton exchange region 6 is formed on at least the surface of the piezoelectric substrate 1 on which the comb-shaped metal pattern 2 is formed, a more stable partially polarization inverted region can be formed.

〔作用] LiTaO3やLiNbO3のような強誘電体は同時に
焦電効果を持っているので、温度変化にともなって電荷
の偏りが生じ、さらに、それに基づく電界が発生する。
[Function] Since ferroelectric materials such as LiTaO3 and LiNbO3 also have a pyroelectric effect, a bias in electric charge occurs as the temperature changes, and an electric field is generated based on this bias.

第3図は本発明の分極反転機構を説明する図(その1)
で、同図(イ)は焦電効果による電荷qと電界の発生状
況を説明する図であり、同図(ロ)は上向きの分極Pの
中の一部表面領域に。
Figure 3 is a diagram explaining the polarization inversion mechanism of the present invention (Part 1)
The figure (a) is a diagram explaining the generation of charge q and electric field due to the pyroelectric effect, and the figure (b) shows a partial surface region of the upward polarization P.

すなわち、櫛型金属パターン2の櫛歯間の表面領域に焦
電効果による電界で下向きに反転した分極P8が発生し
た状態を示している。
That is, it shows a state in which polarization P8 reversed downward due to the electric field due to the pyroelectric effect is generated in the surface area between the comb teeth of the comb-shaped metal pattern 2.

第4図は本発明の分極反転機構を説明する図(その2)
で、この図では圧電体基板1の表面にプロトン交換領域
6を形成した場合であり、すでに知られているようにプ
ロトン交換することによりその部分の分極反転が起こり
易くなるので、焦電効果による電界によって、より安定
に分極反転領域5を形成することができるのである。
Figure 4 is a diagram explaining the polarization inversion mechanism of the present invention (Part 2)
This figure shows the case where a proton exchange region 6 is formed on the surface of the piezoelectric substrate 1, and as is already known, polarization reversal in that region is likely to occur due to proton exchange, so it is likely that the polarization will be reversed due to the pyroelectric effect. The electric field allows the polarization inversion region 5 to be formed more stably.

すなわち、本発明によれば、部分的な分極反転領域5を
形成する際に、Tiの拡散やLiの結晶外への拡散とい
った手段を用いずに、焦電効果による焦電電界で分極反
転を生じさせるので、光損傷は勿論のこと光導波路中で
の屈折率変動も生ぜず。
That is, according to the present invention, when forming the partially polarized region 5, polarization is inverted using a pyroelectric electric field caused by the pyroelectric effect, without using means such as diffusion of Ti or diffusion of Li out of the crystal. Therefore, not only optical damage but also refractive index fluctuation in the optical waveguide does not occur.

したがって、大きな第2高調波光出力が得られる。Therefore, a large second harmonic optical output can be obtained.

さらに、LiTa0,1などのようなキューリ点の低い
結晶に対しても本方法が適用できるという大きな利点が
ある。
Furthermore, this method has the great advantage of being applicable to crystals with low Curie points such as LiTa0,1.

〔実施例〕〔Example〕

第1図は本発明の実施例を示す図で、主な工程を順に図
示したものである。以下、図に従って説明する。
FIG. 1 is a diagram showing an embodiment of the present invention, showing the main steps in order. The explanation will be given below according to the figures.

工程(1):たとえば、厚さ0.5mm、 巾10mm
Step (1): For example, thickness 0.5mm, width 10mm
.

長さ15mmの単一分域処理したLiTa0.の最も大
きな非線形光学定数が得られるように、+2面を光学研
磨して圧電体基板1を作製する。
A single domain treated LiTa0. The piezoelectric substrate 1 is manufactured by optically polishing the +2 surface so as to obtain the largest nonlinear optical constant.

工程(2):上記処理基板の表裏両面に、たとえば、厚
さ1100nのAuの真空蒸着膜からなる全面金属膜2
0および3を形成するとともに、前記全面金属膜20お
よび3を短絡する。たとえば、同じ<Au膜からなる短
絡用金属膜4を側面に形成する。
Step (2): A full-surface metal film 2 made of a vacuum-deposited Au film with a thickness of 1100 nm, for example, is applied to both the front and back surfaces of the treated substrate.
0 and 3 are formed, and the entire surface metal films 20 and 3 are short-circuited. For example, a shorting metal film 4 made of the same <Au film is formed on the side surface.

工程(3):上記処理基板の一方の全面金属膜20を図
示したごとき、たとえば、パターン巾2.5μmパター
ンギャプ2.5μmの等間隔の櫛歯形状にホトエツチン
グを行って櫛型金属パターン2を形成する。
Step (3): As shown in the figure, the entire surface metal film 20 of the above-mentioned processed substrate is photoetched into a comb-shaped metal pattern 2 at equal intervals with a pattern width of 2.5 μm and a pattern gap of 2.5 μm. Form.

工程(4)二上記処理基板をキューリ点画下、たとえば
、600°Cに加熱したあと、直ちに室温に冷却して、
櫛型金属パターン2の櫛歯間の表面領域に焦電効果によ
る電界で分極反転を生じさせる。
Step (4) Two: After heating the above-mentioned treated substrate to, for example, 600°C under curie stippling, immediately cool it to room temperature,
Polarization inversion is caused in the surface region between the comb teeth of the comb-shaped metal pattern 2 by an electric field due to the pyroelectric effect.

工程(5)二上記処理基板上に残された櫛型金属パター
ン2.裏面の全面金属膜3および側面の短絡用金属M4
を適当な処理液で除去・洗浄すれば光導波路用の部分的
な分極反転領域5が形成された圧電体基板1が得られる
Step (5) Comb-shaped metal pattern left on the second treated substrate 2. Full-surface metal film 3 on the back and short-circuiting metal M4 on the side
By removing and cleaning with an appropriate treatment liquid, a piezoelectric substrate 1 on which a partially polarized region 5 for an optical waveguide is formed can be obtained.

分極反転領域5の深さは最高加熱温度や温度変化速度を
調整することにより制御することができる。
The depth of the polarization inversion region 5 can be controlled by adjusting the maximum heating temperature and temperature change rate.

第2図は本発明の他の実施例を示す図で、主な工程を順
に図示説明する。
FIG. 2 is a diagram showing another embodiment of the present invention, and the main steps will be illustrated and explained in order.

工程(1):たとえば、厚さ0.5 mm、巾10mm
長さ15m mの単一分域処理したLiTaO3の最も
大きな非線形光学定数が得られるように、+2面を光学
研磨して圧電体基板1を作製する。
Step (1): For example, thickness 0.5 mm, width 10 mm
A piezoelectric substrate 1 is produced by optically polishing the +2 surface of LiTaO3, which has been subjected to single domain treatment and has a length of 15 mm, so as to obtain the largest nonlinear optical constant.

工程(2):上記処理基板を200〜300’Cに加熱
した安息香酸(C6H1COOH)の融液に数10分〜
数時間浸漬する。いわゆる、プロトン交換法により、少
なくとも、分極反転領域5を形成する面にプロトン交換
領域6を形成する。
Step (2): The above-mentioned treated substrate is immersed in a melt of benzoic acid (C6H1COOH) heated to 200 to 300'C for several tens of minutes.
Soak for several hours. By a so-called proton exchange method, the proton exchange region 6 is formed at least on the surface on which the polarization inversion region 5 is to be formed.

工程(3):上記処理基板の表裏両面に、たとえば、厚
さ1100nのAuの真空蒸着膜からなる全面金属膜2
0および3を形成するとともに、前記全面金属膜20お
よび3を短絡する。たとえば、同じ<Au膜からなる短
絡用金属膜4を側面に形成する。
Step (3): A full-surface metal film 2 made of a vacuum-deposited Au film with a thickness of 1100 nm, for example, is formed on both the front and back surfaces of the treated substrate.
0 and 3 are formed, and the entire surface metal films 20 and 3 are short-circuited. For example, a shorting metal film 4 made of the same <Au film is formed on the side surface.

工程(4):上記処理基板の一方の全面金属膜2oを図
示したごとき、たとえば、パターン巾2.5μmパター
ンギャプ2.5μmの等間隔の櫛歯形状にホトエンチン
グを行って櫛型金属パターン2を形成する。
Step (4): As shown in the figure, the entire surface metal film 2o of the above-mentioned treated substrate is photo-etched into a comb-shaped metal pattern 2 at equal intervals with a pattern width of 2.5 μm and a pattern gap of 2.5 μm. Form.

工程(5)二上記処理基板をキューリ点直下、たとえば
、6000Cに加熱したあと、直ちに室温に冷却して、
櫛型金属パターン2の櫛歯間のプロトン交換領域6に焦
電効果による電界で分極反転を生しさせる。
Step (5) Two: After heating the above-mentioned treated substrate to just below the Curie point, for example, 6000C, immediately cool it to room temperature,
Polarization inversion is caused in the proton exchange region 6 between the comb teeth of the comb-shaped metal pattern 2 by an electric field due to the pyroelectric effect.

工程(6)二上記処理基板上に残された櫛型金属パター
ン2.裏面の全面金属膜3および側面の短絡用金属膜4
を適当な処理液で除去・洗浄すれば光導波路用の部分的
な分極反転領域5が形成された圧電体基板1が得られる
Step (6) Comb-shaped metal pattern left on the second treated substrate 2. Full-surface metal film 3 on the back surface and short-circuiting metal film 4 on the side surface
By removing and cleaning with an appropriate treatment liquid, a piezoelectric substrate 1 on which a partially polarized region 5 for an optical waveguide is formed can be obtained.

本実施例では圧電体基板1の表面にプロトン交換領域6
が予め形成しであるので、より低い温度で分極反転が起
こり、しかも、分極反転領域5の深さもプロトン交換領
域6の深さにはり一致し深さ制御が極めて容易である。
In this embodiment, a proton exchange region 6 is provided on the surface of the piezoelectric substrate 1.
is formed in advance, polarization inversion occurs at a lower temperature, and the depth of the polarization inversion region 5 closely matches the depth of the proton exchange region 6, making depth control extremely easy.

このようにして形成された部分的な分極反転領域5によ
って構成された光導波路型第2高調波発生素子は、従来
のTi拡散による分極反転法を用いるものに比較して光
損傷の闇値が向上し屈折率変動も小さく、大巾に変換効
率が改善される。
The optical waveguide type second harmonic generation element constituted by the partially polarized region 5 formed in this way has a lower optical damage value than that using the conventional polarization inversion method using Ti diffusion. The refractive index fluctuation is also small, and the conversion efficiency is greatly improved.

なお、以上の実施例では全面金属膜3,20および短絡
用金属膜4としてAuの薄膜を用いたが、これに限定さ
れるものではなく、その他光損傷に影響を与えないよう
な材料、たとえば、ptやPdおよびそれらの合金など
を用いてもよい。
In the above embodiments, a thin film of Au was used as the full-surface metal films 3 and 20 and the short-circuiting metal film 4, but the invention is not limited to this, and other materials that do not affect optical damage, such as , pt, Pd, and alloys thereof may also be used.

以上述べた実施例は例を示したもので、本発明の趣旨に
添うものである限り、その他使用する素材や構成など適
宜好ましいもの、あるいはその組み合わせを用いてよい
ことは言うまでもない。
The embodiments described above are merely examples, and it goes without saying that other preferred materials and configurations, or combinations thereof, may be used as long as they comply with the spirit of the present invention.

(発明の効果〕 以上述べたように、本発明方法によれば部分的な分極反
転領域5を形成する際に、Tiの拡散やLiの結晶外へ
の拡散といった手段を用いずに、焦電効果による焦電電
界で分極反転を生じさせるので、光損傷は勿論のこと光
導波路中での屈折率変動も生ぜず、したがって、大きな
第2高調波光出力が得られ、光導波路型第2高調波発生
素子の性能・品質の向上に寄与するところが極めて大き
い。
(Effects of the Invention) As described above, according to the method of the present invention, when forming the partially domain-inverted regions 5, pyroelectric Since polarization inversion is caused by the pyroelectric field caused by the effect, neither optical damage nor refractive index fluctuation occurs in the optical waveguide. Therefore, a large second harmonic optical output can be obtained, and optical waveguide type second harmonic This greatly contributes to improving the performance and quality of the generator.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例を示す図、 第2図は本発明の他の実施例を示す図、第3図は本発明
の分極反転機構を説明する図(その1)、 第4図は本発明の分極反転機構を説明する図(その2)
、 第5図は第2高調波出力特性を示す図、第6図は光導波
路型第2高調波発生素子の例を示す図、 第7図は従来の部分的分極反転領域の形成方法の例を示
す図である。 図において、 1は圧電体基板、2は櫛型金属パターン、3.20は全
面金属膜、4は短絡用金属膜、5は分極反転領域、 6はプロトン交換領域である。 、$究明の企の実施fJを示T口 !!12図 又 ゲ2島盲局5尺土カ′yfjliと示す7第5図 ioo付倫反転型尤導仮距 (イ)躬 す克 図 尤樽返H型第2も試液発生索子の伊]E示す7第6図 オ合明の労すか反耘恢構五説明す5図(その1つ充3図 漆金明の分椿反転低構1尤明する肥(ぜの2)第7図
Fig. 1 is a diagram showing an embodiment of the present invention, Fig. 2 is a diagram showing another embodiment of the invention, Fig. 3 is a diagram explaining the polarization inversion mechanism of the present invention (Part 1), Fig. 4 is a diagram explaining the polarization inversion mechanism of the present invention (Part 2)
, Fig. 5 is a diagram showing the second harmonic output characteristics, Fig. 6 is a diagram showing an example of an optical waveguide type second harmonic generation element, and Fig. 7 is an example of a conventional method for forming a partially polarization inverted region. FIG. In the figure, 1 is a piezoelectric substrate, 2 is a comb-shaped metal pattern, 3.20 is a metal film on the entire surface, 4 is a short-circuiting metal film, 5 is a polarization inversion region, and 6 is a proton exchange region. , I will show you the implementation fJ of the $ investigation plan! ! Figure 12 also shows 2 islands blind station 5 scale earth 7 Figure 5 Fig. 7 E shows 7 Fig. 6 explains Oai Ming's labor and reaction structure 5 Fig. 5 (one of them)

Claims (2)

【特許請求の範囲】[Claims] (1)圧電体基板(1)の一方の面に形成した櫛型金属
パターン(2)と、前記圧電体基板(1)の他方の面に
形成した全面金属膜(3)とを短絡させ、前記圧電体基
板(1)をキューリ点直下まで加熱したあと、直ちに冷
却することを特徴とした部分的分極反転領域の形成方法
(1) short-circuiting a comb-shaped metal pattern (2) formed on one surface of the piezoelectric substrate (1) and a full-surface metal film (3) formed on the other surface of the piezoelectric substrate (1); A method for forming a partially polarized region, characterized in that the piezoelectric substrate (1) is heated to just below the Curie point and then immediately cooled.
(2)前記圧電体基板(1)の少なくとも前記櫛型金属
パターン(2)が形成される面にプロトン交換領域(6
)を形成することを特徴とした請求項(1)記載の部分
的分極反転領域の形成方法。
(2) A proton exchange region (6
2. The method of forming a partially polarization inverted region according to claim 1, wherein:
JP2106071A 1990-04-20 1990-04-20 Formation of partial polarization inversion region Pending JPH043128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2106071A JPH043128A (en) 1990-04-20 1990-04-20 Formation of partial polarization inversion region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2106071A JPH043128A (en) 1990-04-20 1990-04-20 Formation of partial polarization inversion region

Publications (1)

Publication Number Publication Date
JPH043128A true JPH043128A (en) 1992-01-08

Family

ID=14424370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2106071A Pending JPH043128A (en) 1990-04-20 1990-04-20 Formation of partial polarization inversion region

Country Status (1)

Country Link
JP (1) JPH043128A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5303247A (en) * 1992-03-11 1994-04-12 Matsushita Electric Industrial Co., Ltd. Optical harmonic generating device for generating harmonic wave from fundamental wave and shorter wavelength laser generating apparatus in which fundamental wave of laser is converted to harmonic wave with the device
WO1994010592A1 (en) * 1992-10-28 1994-05-11 Fujitsu Limited Method of producing waveguide device
EP2147351A1 (en) * 2007-03-26 2010-01-27 Ricoh Company, Ltd. Wavelength conversion device, laser apparatus, image forming apparatus, and display apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5303247A (en) * 1992-03-11 1994-04-12 Matsushita Electric Industrial Co., Ltd. Optical harmonic generating device for generating harmonic wave from fundamental wave and shorter wavelength laser generating apparatus in which fundamental wave of laser is converted to harmonic wave with the device
WO1994010592A1 (en) * 1992-10-28 1994-05-11 Fujitsu Limited Method of producing waveguide device
US5612086A (en) * 1992-10-28 1997-03-18 Fujitsu Limited Method of manufacturing an optical waveguide device
EP2147351A1 (en) * 2007-03-26 2010-01-27 Ricoh Company, Ltd. Wavelength conversion device, laser apparatus, image forming apparatus, and display apparatus
US8120842B2 (en) 2007-03-26 2012-02-21 Ricoh Company, Ltd. Wavelength conversion device, laser apparatus, image forming apparatus, and display apparatus

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