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JPH04238808A - Production of highly pure crystalline silica - Google Patents

Production of highly pure crystalline silica

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Publication number
JPH04238808A
JPH04238808A JP41801390A JP41801390A JPH04238808A JP H04238808 A JPH04238808 A JP H04238808A JP 41801390 A JP41801390 A JP 41801390A JP 41801390 A JP41801390 A JP 41801390A JP H04238808 A JPH04238808 A JP H04238808A
Authority
JP
Japan
Prior art keywords
silica
crystalline
purity
powder
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP41801390A
Other languages
Japanese (ja)
Other versions
JP2839725B2 (en
Inventor
Kunihiko Nakamura
邦彦 中村
Yojiro Kon
洋次郎 今
Hatsushi Inoue
井上 初志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Steel Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Chemical Co Ltd filed Critical Nippon Steel Chemical Co Ltd
Priority to JP41801390A priority Critical patent/JP2839725B2/en
Publication of JPH04238808A publication Critical patent/JPH04238808A/en
Application granted granted Critical
Publication of JP2839725B2 publication Critical patent/JP2839725B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、高純度でシラノール基
含有量の少ない合成結晶質シリカの製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing synthetic crystalline silica of high purity and low content of silanol groups.

【0002】0002

【従来の技術】溶融法による石英ガラスの原料としては
、従来より天然の水晶が用いられてきたが、近年になっ
てこの石英ガラスが電子部品等の材料として使用される
ようになり、より高純度の石英ガラスを得る必要から、
その原料として高純度の合成シリカの使用が検討されて
いる(特開昭51−77,612号公報、特開昭61−
186,232号公報等)。
[Prior Art] Natural quartz has traditionally been used as a raw material for fused quartz glass, but in recent years this quartz glass has come to be used as a material for electronic parts, etc. Due to the need to obtain high purity quartz glass,
The use of high-purity synthetic silica as a raw material is being considered (JP-A-51-77,612, JP-A-61-
186,232, etc.).

【0003】しかしながら、一般的に、合成的に製造さ
れたシリカは、その製造条件により数Åから数十Å程度
の細孔径を有し、加熱により脱水が始まり、更に1,1
00℃から1,300℃で数時間焼成すると封孔し、こ
の封孔するまでの焼成過程で吸着水や凝縮水が脱離し、
また、シラノール基の縮合反応等により脱水が起こる。 しかしながら、シリカ内部に孤立したシラノール基は、
この焼成過程で縮合反応を起こすことができず、水分と
して内部に残留したまま封孔されてしまう。そして、こ
のようにシラノール基が残留したままのシリカを石英ガ
ラスの原料として使用すると、優れた耐熱性を有する石
英ガラスが得られないという問題が生じる。
However, synthetically produced silica generally has a pore diameter of several angstroms to several tens of angstroms depending on its manufacturing conditions, and dehydration begins upon heating, and further 1,1
The pores are sealed by firing at 00°C to 1,300°C for several hours, and adsorbed water and condensed water are released during the firing process until the pores are sealed.
Further, dehydration occurs due to a condensation reaction of silanol groups, etc. However, the isolated silanol group inside the silica
During this firing process, a condensation reaction cannot occur, and the pores are sealed with moisture remaining inside. If silica with residual silanol groups is used as a raw material for quartz glass, a problem arises in that silica glass with excellent heat resistance cannot be obtained.

【0004】そこで、このシラノール基を除去する方法
として、シリカゲルをハロゲン系の脱OH基剤とキャリ
ヤーガスとの混合ガス気流中で焼成し、シラノール基を
ハロゲン原子に置換する反応を利用して除去する方法が
知られている(特開昭61−186,232号公報)が
、この方法においても、シラノー基に代わってハロゲン
基が残留することになり、石英ガラスにした時に残留ハ
ロゲンに起因する耐熱性の低下や腐食性等の問題が生じ
る。
[0004] Therefore, as a method for removing these silanol groups, silica gel is baked in a mixed gas flow of a halogen-based OH deOH base and a carrier gas, and the silanol groups are removed using a reaction that replaces the silanol groups with halogen atoms. A method is known (Japanese Unexamined Patent Publication No. 61-186,232), but even in this method, halogen groups remain in place of silano groups, and when it is made into quartz glass, it is caused by the residual halogen. Problems such as decreased heat resistance and corrosive properties occur.

【0005】高純度の合成非晶質シリカ粉末を結晶化さ
せることによりシラノール基を除去することも考えられ
るが、全ての金属不純物含有量が1ppm以下の高純度
非晶質シリカは不純物欠陥が少なく結晶核発生が起こり
にくい為、高温焼成を行っても結晶化が起こる以前にシ
リカ粉末の焼結が生じてしまい、粉末状態を維持するこ
とができない。また、低温で結晶化する手段として結晶
化促進剤、例えばアルカリ金属炭酸塩を添加して焼成す
る方法もあるが、当然のことながら不純物を添加するこ
とになり、目的の高純度が維持できない。また、水熱合
成により合成水晶を得る方法もよく知られているが、こ
の方法は本目的には経済的に高価過ぎる手段である。
[0005] Although it is possible to remove the silanol groups by crystallizing high-purity synthetic amorphous silica powder, high-purity amorphous silica containing all metal impurities of 1 ppm or less has few impurity defects. Since crystal nucleus generation is difficult to occur, even if high temperature firing is performed, sintering of the silica powder occurs before crystallization occurs, and the powder state cannot be maintained. Furthermore, as a means of crystallizing at a low temperature, there is a method of adding a crystallization promoter, such as an alkali metal carbonate, and then firing, but this naturally results in the addition of impurities, making it impossible to maintain the desired high purity. It is also well known to obtain synthetic quartz crystals by hydrothermal synthesis, but this method is economically too expensive for this purpose.

【0006】[0006]

【発明が解決しようとする課題】そこで、本発明者らは
、これら従来技術が有する問題を解決し、高純度の合成
無水シリカを効率よく安定的に製造することができる方
法を開発すべく鋭意研究を行った結果、非晶質合成シリ
カあるいは合成シリカゲル中に結晶核となる結晶微粉末
シリカを0.1重量%以上添加混合して好ましくは1,
200℃以上の温度で焼成するか、又は、シリコンアル
コキシドを加水分解ゲル化する際に予め結晶核となる結
晶微粉末シリカを0.1重量%以上添加しておき、得ら
れたシリカゲルを乾燥し、次いで好ましくは1,100
℃以上の温度で焼成することにより、高純度を維持した
ままシリカ中に存在するシラノール基を結晶構造から除
去できることを見出し、本発明を完成するに至った。
[Problems to be Solved by the Invention] Therefore, the present inventors have worked hard to solve the problems of these conventional techniques and to develop a method that can efficiently and stably produce high-purity synthetic anhydrous silica. As a result of research, it was found that 0.1% by weight or more of crystalline fine powder silica, which becomes a crystal nucleus, is added and mixed into amorphous synthetic silica or synthetic silica gel, and preferably 1.
Either by calcining at a temperature of 200°C or higher, or by adding 0.1% by weight or more of crystalline fine powder silica to serve as crystal nuclei when hydrolyzing silicon alkoxide into a gel, and drying the resulting silica gel. , then preferably 1,100
It has been discovered that by firing at a temperature of 0.degree. C. or higher, the silanol groups present in silica can be removed from the crystal structure while maintaining high purity, and the present invention has been completed.

【0007】従って、本発明の目的は、高純度溶融石英
ガラスの製造原料として好適な高純度でシラノール基含
有量の少ない合成結晶質シリカ及びその製造方法を提供
することにある。なお、本発明において、シリカ中のシ
ラノール基はシリカ中に含まれる水分と見なされる。
[0007] Accordingly, an object of the present invention is to provide synthetic crystalline silica of high purity and low content of silanol groups, which is suitable as a raw material for producing high-purity fused silica glass, and a method for producing the same. In addition, in the present invention, the silanol group in silica is considered to be water contained in silica.

【0008】[0008]

【課題を解決するための手段】すなわち、本発明は、合
成非晶質シリカ粉末あるいは合成シリカゲル粉末中に、
結晶核となる結晶微粉末シリカを0.1重量%以上添加
して焼成する高純度結晶質シリカの製造方法であり、ま
た、シリコンアルコキシドを加水分解ゲル化する際に結
晶核となる結晶微粉末シリカを予め0.1重量%以上添
加し、得られたシリカゲル粉末を乾燥後焼成する高純度
結晶質シリカの製造方法である。以下、本発明の合成結
晶質シリカの製造方法について具体的に説明する。
[Means for Solving the Problems] That is, the present invention provides synthetic amorphous silica powder or synthetic silica gel powder containing
This is a method for producing high-purity crystalline silica in which 0.1% by weight or more of crystalline fine powder silica is added and fired to serve as crystal nuclei, and the crystal fine powder that serves as crystal nuclei is used when silicon alkoxide is hydrolyzed and gelled. This is a method for producing high-purity crystalline silica, in which 0.1% by weight or more of silica is added in advance, and the obtained silica gel powder is dried and then fired. Hereinafter, the method for producing synthetic crystalline silica of the present invention will be specifically explained.

【0009】本発明において使用できる結晶核となる結
晶微粉末シリカとしては、天然品又は合成品の水晶、ク
リストバライト、トリジマイト等がある。結晶核の純度
が悪い場合には、結晶核を高純度合成非晶質シリカに添
加後焼成して高純度の合成結晶質シリカを製造する操作
を数回繰り返すことにより、目的の物を得ることができ
る。
[0009] Finely crystalline silica powder serving as a crystal nucleus that can be used in the present invention includes natural or synthetic quartz, cristobalite, tridymite, and the like. If the purity of the crystal nuclei is poor, the desired product can be obtained by repeating the process several times to add the crystal nuclei to high-purity synthetic amorphous silica and then sintering to produce high-purity synthetic crystalline silica. I can do it.

【0010】本発明において、結晶核となる結晶微粉末
シリカの使用量は、合成非晶質シリカに対して0.1重
量%以上、より好ましくは0.5重量%以上である。結
晶核となる結晶質微粉末シリカの使用量が0.1重量%
に満たない場合は、非晶質シリカ又はシリカゲルの結晶
化が実質的に充分に進まず水分含有量の少ないシリカを
得ることができない。結晶核となる結晶微粉末シリカの
添加量が多くなるにともない実質的により低温で、より
短時間で完全に結晶質の高純度無水シリカを得ることが
できる傾向がある。
In the present invention, the amount of crystalline fine powder silica used as crystal nuclei is 0.1% by weight or more, more preferably 0.5% by weight or more, based on the synthetic amorphous silica. The amount of crystalline fine powder silica used as crystal nuclei is 0.1% by weight.
If the water content is less than 1, the crystallization of amorphous silica or silica gel will not substantially proceed sufficiently, making it impossible to obtain silica with a low water content. As the amount of crystalline fine powder silica that serves as crystal nuclei increases, it tends to be possible to obtain completely crystalline, highly pure anhydrous silica at a substantially lower temperature and in a shorter time.

【0011】本発明において使用できる高純度非晶質シ
リカやシリカゲルは、シリコンアルコキシド又は四塩化
珪素を加水分解して得られるシリカ、珪酸ナトリウム法
による天然原料を精製して得られるシリカ等、高純度の
シリカやシリカゲルであれば任意のものを使用できる。
The high-purity amorphous silica and silica gel that can be used in the present invention include silica obtained by hydrolyzing silicon alkoxide or silicon tetrachloride, and silica obtained by refining natural raw materials by the sodium silicate method. Any silica or silica gel can be used.

【0012】本発明の結晶化による無水シリカの製造は
、結晶核となる結晶微粉末シリカを高純度非晶質シリカ
、あるいは、シリカゲルに0.1重量%以上添加混合し
て好ましくは1,200℃以上の温度で焼成するか、又
は、シリコンアルコキシドを加水分解ゲル化する際に予
め結晶核となる結晶微粉末シリカを0.1重量%以上添
加しておき、得られたシリカゲルを乾燥し、次いで好ま
しくは1,100℃以上の温度で焼成することにより行
うことができる。焼成温度が低すぎると結晶化速度が遅
くなり、実質的に完全に結晶化させることが困難である
[0012] In the production of anhydrous silica by crystallization according to the present invention, 0.1% by weight or more of crystalline fine powder silica serving as a crystal nucleus is added to high purity amorphous silica or silica gel and mixed, preferably 1,200% by weight or more. Either by baking at a temperature of ℃ or higher, or by adding 0.1% by weight or more of crystalline fine powder silica that will become crystal nuclei in advance when hydrolyzing and gelling silicon alkoxide, and drying the obtained silica gel, This can then be carried out by firing preferably at a temperature of 1,100° C. or higher. If the firing temperature is too low, the crystallization rate will be slow and it will be difficult to achieve substantially complete crystallization.

【0013】具体的な製造方法としては、例えば、シリ
コンアルコキシドを原料として得られた高純度の非晶質
シリカ粉末100重量部に、天然の高純度水晶を平均粒
径数μm程度に粉砕した物を1重量部添加、混合し、大
気中、マッフル炉で1,300℃10時間焼成する方法
、また、テトラメチルオルソシリケート253重量部に
、水140重量部、メタノール53重量部、天然の高純
度水晶を平均粒径数μm程度に粉砕した物を1重量部添
加攪拌しゲル化した後乾燥及び、大気中、マッフル炉で
1,200℃10時間焼成する方法がある。このときの
シリコンアルコキシドの加水分解、ゲル化反応は一般に
知られている方法(アグネ承風社発行「ゾル−ゲル法の
科学」第8〜13頁等)で行うことができる。また、結
晶核となる結晶質微粉末シリカの粒度は、より細かい方
が少量の添加でも結晶化させる効果が大きくなり、より
低温で結晶質の高純度合成無水シリカを得ることができ
る。
[0013] As a specific manufacturing method, for example, 100 parts by weight of high-purity amorphous silica powder obtained from silicon alkoxide as a raw material is pulverized with high-purity natural crystal to an average particle diameter of several μm. A method of adding 1 part by weight of, mixing, and baking in a muffle furnace in the air at 1,300°C for 10 hours.Also, to 253 parts by weight of tetramethyl orthosilicate, 140 parts by weight of water, 53 parts by weight of methanol, and high purity natural There is a method in which 1 part by weight of quartz is crushed to an average particle diameter of several μm, stirred, gelled, dried, and fired in the air at 1,200° C. for 10 hours in a muffle furnace. The hydrolysis and gelation reaction of the silicon alkoxide at this time can be carried out by a generally known method (eg, "Science of Sol-Gel Method", published by Agne Seifu-sha, pp. 8-13). Further, the finer the particle size of the crystalline fine powder silica that becomes the crystal nucleus, the greater the effect of crystallization even when added in a small amount, and crystalline high-purity synthetic anhydrous silica can be obtained at a lower temperature.

【0014】この様にして得られた合成結晶シリカは、
溶融石英ガラス原料として用いる場合、高純度、低水分
含有と言う特徴を有するのみならず、他の方法で得られ
た同じ高純度、低水分含有の非晶質シリカと比べた場合
、非晶質のものでは溶融温度範囲が広いのに対し、結晶
質のものでは一定の融点を持つので溶融温度範囲が狭く
、瞬時に全体が溶融する。従って溶融時にガラス中に泡
となって残存する気泡の生成が少ないと言う特徴も有す
る。
The synthetic crystalline silica thus obtained is
When used as a raw material for fused silica glass, it not only has the characteristics of high purity and low moisture content, but also has the characteristics of high purity and low moisture content when compared with amorphous silica of the same high purity and low moisture content obtained by other methods. Crystalline materials have a wide melting temperature range, while crystalline materials have a fixed melting point and therefore have a narrow melting temperature range, melting instantly. Therefore, it also has the characteristic that fewer bubbles remain in the glass during melting.

【0015】[0015]

【実施例】以下、実施例に基づいて、本発明を詳細に説
明する。
EXAMPLES The present invention will be explained in detail below based on examples.

【0016】実施例1 高純度合成シリカに鉱化剤を添加し1,200℃で5時
間焼成してクリストバライト化した後、メノウ製の遊星
ボールミルで平均粒径2μmに粉砕してこれを結晶核と
した。次に、水分含有量が10%程度の高純度の合成非
晶質シリカを1,100℃で10時間焼成してOH基量
が760ppmの非晶質シリカを得た。
Example 1 A mineralizing agent was added to high-purity synthetic silica, and the mixture was fired at 1,200°C for 5 hours to form cristobalite, which was then ground to an average particle size of 2 μm using an agate planetary ball mill to form crystal nuclei. And so. Next, highly pure synthetic amorphous silica with a water content of about 10% was calcined at 1,100° C. for 10 hours to obtain amorphous silica with an OH group content of 760 ppm.

【0017】この非晶質シリカに対して結晶核を0.5
重量%添加し、1,300℃で10時間焼成して水分含
有量の少ない結晶質シリカを得た。得られた結晶質シリ
カを次の結晶核として上記の操作を2回繰返し高純度で
水分含有量の少ない結晶質シリカ(クリストバライト)
を得た。
[0017] Crystal nuclei are added to this amorphous silica by 0.5
% by weight was added and calcined at 1,300° C. for 10 hours to obtain crystalline silica with a low water content. The above operation is repeated twice using the obtained crystalline silica as the next crystal nucleus to produce crystalline silica (cristobalite) with high purity and low water content.
I got it.

【0018】得られたクリストバライトのOH基量を表
1に、また、純度の分析結果を表2にそれぞれ示す。な
お、OH基量の濃度は、石英チューブ内で吸着水を20
0℃減圧下で30分かけて脱着した後、真空状態でバー
ナー加熱を行いメルトし、冷却後試験片を切り出してF
T−IRで透過率を測定し、Lambert−Beer
の法則から求めた。
Table 1 shows the OH group content of the cristobalite obtained, and Table 2 shows the purity analysis results. Note that the concentration of OH groups is as follows: 20% of adsorbed water in a quartz tube.
After desorption for 30 minutes under reduced pressure at 0°C, it was melted by heating with a burner in a vacuum state, and after cooling, a test piece was cut out and F
Transmittance was measured by T-IR and Lambert-Beer
It was determined from the law of

【0019】実施例2 シリコンアルコキシドを加水分解して水分含有量10%
程度の高純度合成シリカゲルを合成し、これを1,10
0℃で10時間焼成してOH基量が760ppmの非晶
質シリカを得た。
Example 2 Silicon alkoxide is hydrolyzed to have a water content of 10%
Synthesize high-purity synthetic silica gel of about 1.10
After firing at 0° C. for 10 hours, amorphous silica having an OH group content of 760 ppm was obtained.

【0020】この非晶質シリカに対して実施例1で得た
結晶核を0.5重量%添加し、1,300℃で10時間
焼成して水分含有量の少ない結晶質シリカを得た。得ら
れた結晶質シリカを次の結晶核として上記の操作を2回
繰り返し高純度で水分含有量の少ない結晶質シリカ(ク
リストバライト)を得た。得られたクリストバライトの
OH基量を表1に、また、純度の分析結果を表2にそれ
ぞれ示す。
0.5% by weight of the crystal nuclei obtained in Example 1 was added to this amorphous silica, and the mixture was calcined at 1,300° C. for 10 hours to obtain crystalline silica with a low water content. The above operation was repeated twice using the obtained crystalline silica as the next crystal nucleus to obtain crystalline silica (cristobalite) with high purity and low water content. Table 1 shows the amount of OH groups in the obtained cristobalite, and Table 2 shows the purity analysis results.

【0021】実施例3 テトラメチルオルソシリケート253重量部に、水24
0重量部、メタノール53重量部、実施例1で得られた
結晶核を0.5重量部添加攪拌しゲル化した後乾燥して
、得られたシリカゲルを1,200℃で10時間焼成し
て水分含有量の少ない結晶質シリカを得た。得られた結
晶質シリカを次の結晶核として上記の操作を2回繰り返
し高純度で水分含有量の少ない結晶質シリカ(クリスト
バライト)を得た。得られたクリストバライトのOH基
量を表1に、また、純度の分析結果を表2にそれぞれ示
す。
Example 3 To 253 parts by weight of tetramethyl orthosilicate, 24 parts by weight of water was added.
0 parts by weight, 53 parts by weight of methanol, and 0.5 parts by weight of the crystal nuclei obtained in Example 1 were added, stirred, gelled, and dried. The obtained silica gel was calcined at 1,200°C for 10 hours. Crystalline silica with low water content was obtained. The above operation was repeated twice using the obtained crystalline silica as the next crystal nucleus to obtain crystalline silica (cristobalite) with high purity and low water content. Table 1 shows the amount of OH groups in the obtained cristobalite, and Table 2 shows the purity analysis results.

【0022】比較例1 結晶核を高純度非晶質シリカに添加した後の焼成を1,
100℃で行った以外は実施例1と同じ操作を行った。 得られた非晶質とクリストバライトの混合体のOH基量
を表3に示す。
Comparative Example 1 After adding crystal nuclei to high-purity amorphous silica, calcination was carried out in 1,
The same operation as in Example 1 was performed except that the temperature was 100°C. Table 3 shows the OH group content of the obtained mixture of amorphous and cristobalite.

【0023】比較例2 シリカゲルの焼成を1,000℃で行った以外は実施例
3と同じ操作を行った。得られた非晶質とクリストバラ
イトの混合体のOH基量を表3に示す。
Comparative Example 2 The same operation as in Example 3 was carried out except that the silica gel was calcined at 1,000°C. Table 3 shows the OH group content of the obtained mixture of amorphous and cristobalite.

【0024】比較例3 結晶核を添加していない高純度の合成非晶質シリカを1
,500℃で10時間焼成したところ、シリカは焼結し
てしまった。得られた非晶質とクリストバライトの混合
体のOH基量を表3に示す。
Comparative Example 3 High purity synthetic amorphous silica to which no crystal nuclei were added
, 10 hours at 500°C, the silica was sintered. Table 3 shows the OH group content of the obtained mixture of amorphous and cristobalite.

【0025】比較例4 結晶核を添加しなかったこと以外は、実施例3と同様に
して得られたシリカゲルを1,300℃で10時間焼成
した。得られた非晶質シリカのOH基量を表3に示す。
Comparative Example 4 Silica gel obtained in the same manner as in Example 3 except that no crystal nuclei were added was calcined at 1,300° C. for 10 hours. Table 3 shows the amount of OH groups in the obtained amorphous silica.

【表1】[Table 1]

【表2】[Table 2]

【表3】[Table 3]

【発明の効果】本発明方法によれば、高純度でシラノー
ル基含有量の少ない合成結晶質シリカ粉末を効率よく安
定的に製造することができる。このような合成結晶質シ
リカ粉末は、高純度溶融石英ガラスの原料として特に有
用である。
According to the method of the present invention, synthetic crystalline silica powder of high purity and low content of silanol groups can be efficiently and stably produced. Such synthetic crystalline silica powder is particularly useful as a raw material for high purity fused silica glass.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】  合成非晶質シリカ粉末あるいは合成シ
リカゲル粉末中に、結晶核となる結晶微粉末シリカを0
.1重量%以上添加して焼成することを特徴とする高純
度結晶質シリカの製造方法。
Claim 1: Synthetic amorphous silica powder or synthetic silica gel powder contains zero crystalline fine powder silica, which will serve as crystal nuclei.
.. A method for producing high-purity crystalline silica, which comprises adding 1% by weight or more and firing.
【請求項2】  シリコンアルコキシドを加水分解ゲル
化する際に結晶核となる結晶微粉末シリカを予め0.1
重量%以上添加し、得られたシリカゲル粉末を乾燥後焼
成することを特徴とする高純度結晶質シリカの製造方法
[Claim 2] When silicon alkoxide is hydrolyzed to form a gel, fine crystalline powder silica, which will serve as crystal nuclei, is added in advance to a concentration of 0.1
1. A method for producing high-purity crystalline silica, which comprises adding silica gel powder in an amount of at least % by weight, drying the obtained silica gel powder, and then firing the obtained silica gel powder.
【請求項3】  請求項1ないし2記載の方法によって
得られる結晶質シリカが、全ての金属不純物元素の含有
量が1ppm以下で、かつシラノール基含有量が50p
pm以下である製造方法。
3. The crystalline silica obtained by the method according to claim 1 or 2 has a content of all metal impurity elements of 1 ppm or less and a silanol group content of 50 ppm.
pm or less.
JP41801390A 1990-12-28 1990-12-28 Method for producing high-purity crystalline silica Expired - Fee Related JP2839725B2 (en)

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Application Number Priority Date Filing Date Title
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JPH04238808A true JPH04238808A (en) 1992-08-26
JP2839725B2 JP2839725B2 (en) 1998-12-16

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WO1996020128A1 (en) * 1994-12-26 1996-07-04 Mitsubishi Chemical Corporation Process for producing synthetic quartz powder
JPH11209132A (en) * 1998-01-23 1999-08-03 Tosoh Corp Method for producing high-purity transparent silica glass
US6225245B1 (en) * 1996-11-20 2001-05-01 Mitsubishi Chemical Corporation Silica gel, synthetic quartz glass powder and shaped product of quartz glass
JP2004091220A (en) * 2002-08-29 2004-03-25 Fuso Chemical Co Ltd Method for producing high purity hydrophilic organic solvent dispersed silica sol, high purity hydrophilic organic solvent dispersed silica sol obtained by the method, method for producing high purity organic solvent dispersed silica sol, and high purity organic solvent dispersed silica sol obtained by the method
JP2007308371A (en) * 2007-09-03 2007-11-29 Mitsubishi Chemicals Corp Method for producing silica gel
WO2008032698A1 (en) 2006-09-11 2008-03-20 Tosoh Corporation Fused quartz glass and process for producing the same
CN113307275A (en) * 2021-03-05 2021-08-27 武汉大学 Preparation method of high-purity crystalline silica particles
WO2023022215A1 (en) * 2021-08-20 2023-02-23 デンカ株式会社 Spherical crystalline silica powder and method for producing same
CN116873943A (en) * 2023-08-07 2023-10-13 安徽壹石通材料科技股份有限公司 A kind of preparation method of high-purity cristobalite

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996020128A1 (en) * 1994-12-26 1996-07-04 Mitsubishi Chemical Corporation Process for producing synthetic quartz powder
US6110852A (en) * 1994-12-26 2000-08-29 Mitsubishi Chemical Corporation Process for producing synthetic quartz glass powder
US6225245B1 (en) * 1996-11-20 2001-05-01 Mitsubishi Chemical Corporation Silica gel, synthetic quartz glass powder and shaped product of quartz glass
JPH11209132A (en) * 1998-01-23 1999-08-03 Tosoh Corp Method for producing high-purity transparent silica glass
JP2004091220A (en) * 2002-08-29 2004-03-25 Fuso Chemical Co Ltd Method for producing high purity hydrophilic organic solvent dispersed silica sol, high purity hydrophilic organic solvent dispersed silica sol obtained by the method, method for producing high purity organic solvent dispersed silica sol, and high purity organic solvent dispersed silica sol obtained by the method
WO2008032698A1 (en) 2006-09-11 2008-03-20 Tosoh Corporation Fused quartz glass and process for producing the same
US8211817B2 (en) 2006-09-11 2012-07-03 Tosoh Corporation Fused silica glass and process for producing the same
EP2070883A4 (en) * 2006-09-11 2012-09-12 Tosoh Corp QUARTZ GLASS AND PROCESS FOR PRODUCING THE SAME
JP2007308371A (en) * 2007-09-03 2007-11-29 Mitsubishi Chemicals Corp Method for producing silica gel
CN113307275A (en) * 2021-03-05 2021-08-27 武汉大学 Preparation method of high-purity crystalline silica particles
WO2023022215A1 (en) * 2021-08-20 2023-02-23 デンカ株式会社 Spherical crystalline silica powder and method for producing same
JPWO2023022215A1 (en) * 2021-08-20 2023-02-23
CN116873943A (en) * 2023-08-07 2023-10-13 安徽壹石通材料科技股份有限公司 A kind of preparation method of high-purity cristobalite
CN116873943B (en) * 2023-08-07 2024-02-23 安徽壹石通材料科技股份有限公司 Preparation method of high-purity cristobalite

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