JPH04211117A - Method and apparatus for vapor growth - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention]

[Purpose of the invention] [0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus and method used for manufacturing semiconductors and the like. [0002]

2. Description of the Related Art A vapor phase growth apparatus for manufacturing a semiconductor or the like by vapor phase growing a film of a semiconductor or the like on a crystal substrate is used, for example, as shown in FIG.
It is configured as shown in . [0003] As shown in this figure, the vapor phase growth apparatus is
Reactor 1 hermetically fixed on Hess plate 100
01, a substrate holder 10 on which a crystal substrate 102 is placed
3, a rotating shaft 104 for removably directing the substrate holder 103, and a heater 105 for heating the crystal substrate 102 and the substrate holder 103. [0004] In the reactor 101, a supply port 101a for supplying gas (raw material gas, carrier gas, etc.) is formed in the upper part, and an exhaust port 101b for discharging unreacted gas in the reactor 101 is formed in the lower part. ing. [0005] The vapor phase growth apparatus is configured as described above, and includes a crystal substrate 102 placed on a substrate holder 103.
is raised to a predetermined temperature by heating with the heater 105,
Raw material gas (for example, SiH4, SiH2C12, 5iHC13, 5i
C14, Si2 H6, etc.) with a carrier gas (e.g., H
2, etc.), and a film of a semiconductor or the like is grown in a vapor phase on the crystal substrate 102. [0006] Generally, the crystal substrate on the substrate holder is heated to a predetermined temperature using a heating method such as a lamp, high frequency, or resistance. A technique disclosed in JP-A-61-215289 or JP-A-62-4315 has been proposed. [0007] FIG. 46 is an enlarged view of the substrate holder disclosed in Japanese Patent Application Laid-Open No. 61-215289, in which the substrate holder 200 is provided with counterbore portions 202 and 203 at the portion on which the substrate 201 is placed. ing. [0008] However, such a substrate holder 20
0, the temperature of the portion (periphery) of the substrate 201 in contact with the substrate holder 200 is higher than other portions, making it difficult to obtain a uniform crystal growth film. Particularly in recent years, there has been a strong desire to effectively utilize the front surface of the substrate, and it is not efficient to sacrifice the periphery of the substrate. Uniformity of thin films is required. [0009] Furthermore, the most problematic issue is that stress caused by temperature distribution within the substrate plane causes dislocations such as slips to occur in single crystal substrates (Si, etc.), a phenomenon that deteriorates device characteristics. [00101 Slip is a phenomenon in which sliding deformation occurs along the crystal lattice due to the generation of stress exceeding the yield value due to the occurrence of in-plane temperature distribution of the substrate at high temperatures. When the temperature rises, the yield stress of the substrate decreases, and slips are more likely to occur due to thermal stress caused by the temperature distribution of the substrate. [00111] Furthermore, when the substrate warped due to the temperature distribution of the substrate, etc., the distance between the substrate holder and the substrate changed, resulting in a phenomenon in which the substrate temperature changed. Furthermore, it is difficult to attach/detach the substrate to/from the substrate holder unless the temperature of the substrate is low to a certain extent. [0012]

[Problems to be Solved by the Invention] As described above, in conventional vapor phase growth apparatuses, the substrate temperature is different in the area where the substrate holder and the substrate are in contact with each other than in other areas, making it difficult to obtain a uniform thin film. Ta. Furthermore, when the substrate warps due to temperature distribution caused by a temperature difference between the front and back sides of the substrate, a phenomenon occurs in which the in-plane temperature distribution of the substrate changes due to a change in the distance between the substrate holder and the substrate. If this in-plane temperature distribution becomes non-uniform, firstly, crystal growth with uniform physical properties such as carrier concentration cannot be achieved. The second problem is that stress is generated and dislocations such as slip occur, deteriorating device characteristics. Further, there is a problem in that it is difficult to attach/detach the substrate to/from the substrate holder unless the temperature of the substrate is low to a certain extent, making it difficult to improve throughput. [Configuration of the invention] [0013]

[Means for Solving the Problems] According to the invention of claim 1, a vapor phase growth apparatus is provided, in which a substrate is placed on a substrate support member heated by a heating means, and a thin film is grown on the substrate by a supplied gas. In the substrate support member,
a first member that is heated to a predetermined temperature by the heating means; a second member that supports the substrate at its periphery; and a second member that supports the substrate at its periphery; and a support member for supporting the member. [0014] According to the invention of claim 2, in the vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means and a thin film is grown on the substrate by a supplied gas, the substrate support member A counterbore portion having a diameter larger than the diameter of the substrate is formed in the substrate support portion, and the substrate support portion is formed such that the substrate support member supports the peripheral portion of the substrate via the counterbore portion. [0015] According to the invention of claim 3, in the vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means and a thin film is grown on the substrate by a supplied gas, the substrate support member includes a first member heated to a predetermined temperature by the heating means, a counterbore portion formed in the first member having a diameter larger than the diameter of the substrate, and a peripheral edge of the substrate above the counterbore portion. a second member supported by the first member to support the section;
It is characterized by being composed of. [0016] According to the invention of claim 4, in the vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means and a thin film is grown on the substrate by a supplied gas, the substrate support member comprises a first member heated to a predetermined temperature by the heating means, and a member having a smaller heat transfer coefficient than the first member;
a second member placed on the member to support the peripheral edge of the substrate;
It is characterized by being composed of the following members. [0017] According to the invention of claim 5, in the vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means and a thin film is grown on the substrate by a supplied gas, the substrate support member has a first member heated to a predetermined temperature by the heating means, and is formed on the first member and has a curvature approximately equal to the curvature of warping when the substrate is heated and warped; A counterbore portion having a depth of 1 mm or more and facing the substrate surface. [0018] According to the invention of claim 6, in the vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means and a thin film is grown on the substrate by a supplied gas, the substrate support member The first member has a counterbore formed therein and is heated to a predetermined temperature by the heating means, and when the substrate is placed on the first member, the counterbore increases the temperature between the first member and the substrate. and a gas supply means for supplying a gas having a lower thermal conductivity than the gas to the space. [0019] According to the invention of claim 7, in the vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means and a thin film is grown on the substrate by a supplied gas, the substrate support member a first member heated to a predetermined temperature by the heating means, a second member supporting the substrate at its peripheral edge, the second member facing the first member, and The first member is characterized in that it is comprised of a support member for opposing support in a non-contact manner. [00201 In the invention as set forth in claim 8, in a vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means and a thin film is grown on the substrate by a supplied gas, the substrate support member is heated by a heating means. The members include a first member heated to a predetermined temperature by the heating means;
a second member made of a member that supports the peripheral edge of the substrate to support the substrate with respect to the member and has an emissivity that is approximately equal to the emissivity of the substrate; There is. [00211 In the invention of claim 9, in a vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means and a thin film is grown on the substrate by a supplied gas, the substrate support member is , a first member heated to a predetermined temperature by the heating means; a peripheral portion of the substrate for supporting the substrate with respect to the first member; and a heat capacity approximately equal to that of the substrate; and a second member consisting of a member having. [0022]

[Function] The biggest problem in the past was that slippage occurred due to thermal stress due to temperature distribution, but the present inventors have recently investigated the relationship between the heat transfer/radiation mechanism of the board and the generated stress. As a result of extensive research, we found that stress due to the temperature difference between the front and back sides of the board is not the direct cause of the slip, but rather a radial temperature distribution that occurs within the board surface as a result of deformation (board warping) due to the temperature difference between the front and back sides. It was found that the cause was thermal stress due to (in-plane temperature distribution). [0023] Therefore, as conventionally believed, double-sided heating or lamp heating to reduce the temperature difference between the front and back surfaces is not necessarily necessary, and slipping can be prevented by making the in-plane temperature distribution uniform. [00241] The present invention was achieved based on the above-mentioned findings and by studying various methods for making the in-plane temperature distribution of a substrate uniform. As for the in-plane temperature distribution, as mentioned above, there are two causes: the deformation (warpage) of the substrate, and the effect of heat transfer due to the support members that support the substrate, etc., but in any case, the in-plane temperature distribution Slips are prevented by making them uniform. Next, the specific operation of the present invention will be explained. [0025] In the invention according to claims 1, 2, and 3, the heated substrate holder (first member)
It becomes possible to take a long heat transfer path from the substrate to the peripheral edge of the substrate, and the influence of heat directly transmitted to the peripheral edge of the substrate can be suppressed. [0026] As a result, the temperature does not locally increase only at the periphery of the substrate. Therefore, the in-plane temperature distribution of the substrate is made extremely uniform, and no thermal stress is generated, so that slips can be prevented. [0027] In the invention according to claim 4, since the substrate is supported by the heated substrate holder (first member), the influence of heat directly transmitted to the peripheral edge of the substrate can be suppressed to a small level. , and the same actions and effects as described above can be obtained. [0028] In the invention according to claim 7, since the substrate is supported in a non-contact manner with respect to the heated substrate holder, the influence of heat directly transmitted to the peripheral edge of the substrate can be reduced to zero,
Actions and effects similar to those described above are most noticeable. [0029] In the invention as set forth in claim 5, since the counterbore portion is formed to have a curvature equivalent to the curvature when warping occurs due to temperature distribution on the front and back sides of the substrate, the substrate is heated during vapor phase growth. Since the opposing distance between the support member and the substrate is 1 mm or more and is constant over the entire surface of the substrate, the in-plane temperature distribution of the substrate is made uniform, and the same effects and effects as described above can be obtained. [00301 In the invention described in claim 6, since a gas having a low thermal conductivity is interposed between the substrate holder (first member) heated by the heating means and the substrate, heat conduction to the substrate is There is only radiation. Heat conduction by radiation is extremely insensitive to changes in the facing distance between the substrate holder and the substrate, so the in-plane temperature distribution of the substrate can be made uniform even when the temperature distribution on the front and back sides of the substrate is warped, resulting in the same effect as described above.・Effects can be obtained. [00311 In the inventions set forth in claims 8 and 9, the second member that supports the substrate with respect to the heated substrate holder (first member) is made of a material whose radiation or heat capacity is approximately equal to that of the substrate. Therefore, the substrate and the second member are theoretically heated to approximately the same temperature. Even if the board is affected by direct heat conduction from the board holder, the second member acts as a dummy board, and even if this second member is affected by direct heat conduction, the heat transfer does not reach the board. It is unlikely to be affected. Therefore, the in-plane temperature distribution of the substrate is made uniform, and the same effects and effects as described above can be obtained. [0032]

Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings. Embodiment 1 FIG. 1 shows a vapor phase growth apparatus according to a first embodiment of the present invention. As shown in FIG. 1, inside a reactor 2 that is airtightly fixed on a base plate 1, there is a disk-shaped substrate holder 4 on which a crystal substrate 3 is placed, and a rotation drive unit 8 at one end.
A rotating shaft 5 connected to the substrate holder 4 and detachably supporting the substrate holder 4, and a heater 6 for heating the crystal substrate 3 and the substrate holder 4 are provided. [0033] A supply port 2a connected to a gas supply unit 9 for supplying gases such as raw material gas and carrier gas is formed in the upper part of the reactor 2, and a supply port 2a connected to a gas supply unit 9 for supplying gases such as raw material gas and carrier gas is formed in the lower part. An exhaust port 2b for discharging the air is formed. [0034] In this vapor phase growth apparatus, the substrate 3 is heated by the heater 6 to raise the temperature of the substrate holder 4 to a predetermined temperature, and the raw material gas is fed into the reactor 2 from the supply port 2a together with the carrier gas. A semiconductor thin film is grown on the crystal substrate 33 in a vapor phase. [0035] FIG. 2 shows an enlarged view of the substrate holder 4 portion in FIG. 1. The peripheral edge of the substrate 3 is supported by a substrate support 10, and the substrate support 10 is supported by the substrate holder 4 by a support rod 11. This support rod 1
For example, three of them are installed on the periphery of the substrate holder 4 and support the substrate support 10 at three points. In addition, the support rod 11
The substrate holder 4 is not limited to this, and may be supported at one point, two points, or four or more points, and a support wall may be formed around the entire periphery of the substrate holder 4. [0036] The substrate support 10 is provided with a through hole 10a having a diameter slightly smaller than the diameter of the substrate 3 in a portion where the substrate 3 is placed, and contacts the substrate 3 only at the peripheral portion thereof, and is connected to the substrate holder 4. The substrate supports 10 are in contact only at the support rods 11. Therefore, direct heat transfer from the substrate holder 4 to the substrate 3 via the support rod 11 and the substrate support 10 is so small that it can be almost ignored because the heat transfer path is long and the cross-sectional area of the path is small. Heat is transferred from the substrate holder 4 to the substrate 3 only by radiation and heat conduction of the gas (H2 as a carrier gas in this case) existing between the substrate holder 4 and the substrate 3. [0037] Assuming that these amounts of heat transfer and the amount of heat dissipated from the substrate 3 are equal according to the law of conservation of heat, the substrate temperature T when the substrate holder 4 is held at a constant temperature by the heater 6
The relationship between the distance d and the distance d between the substrate holder 4 and the substrate 3 is shown in FIG.
Shown below. [0038] As can be understood from FIG. 3, when the distance d between the substrate holder 4 and the substrate 3 is close to each other and is 1 mm or less, the substrate temperature does not change even if the distance between the substrate holder 4 and the substrate 3 changes slightly. Change significantly. [0039] On the other hand, the distance d between the substrate holder 4 and the substrate 3
When the distance between the substrate holder 4 and the substrate 3 is 1 mm or more, the substrate temperature does not change much even if the distance between the substrate holder 4 and the substrate 3 changes to some extent. In other words, when the distance d is 1 mm or more, the distance d
Changes in substrate temperature are insensitive to changes in . Therefore, when the distance d is set to 1 mm or more, the substrate is less likely to be adversely affected by warping when heated.

Specifically, in the first embodiment of the present invention,
The distance between the substrate holder 4 and the substrate 3 is 5 mm, and the distance between the substrate holder 4 and the substrate support 10 is 4 mm. The substrate holder 4 is then heated to a uniform temperature by the heater 6, and the entire surface of the substrate 3 is maintained at a substantially uniform temperature by radiation from the substrate holder 4, which has been heated to a uniform temperature, and by heat transfer from the gas. In this apparatus, during the heating, the substrate 3 is rotated by the rotary drive unit 8 via the rotary shaft 5, for example, at 10 rpm.
It is rotated at a rotation speed of m or more. [00411 Note that even if the substrate holder 4, support rod 11, and substrate support 10 shown in FIG. 2 are formed separately and assembled, they can be integrated as shown in FIG. 4, as described later. may be formed. [0042] Also, like the substrate 3, the substrate support 10 disposed above the substrate holder 4 is heated only by radiation heat transfer from the substrate holder 4 or gas heat transfer, and the substrate 3 and the substrate support are heated. Almost no temperature difference occurs in the body 10. Therefore, the peripheral portion of the substrate 3 supported by the substrate support 10 will not locally become hot. [0043] Example 2 Next, a second example will be described. FIG. 4 shows a second embodiment. In this second embodiment, the substrate holder 4,
The support rod (support wall) 11 and the substrate support body 10 are integrally formed, and this is similar to the seventh embodiment described later in which the diameter of the counterbore portion 20 is larger than the diameter of the substrate 3. That is, by making the diameter of the counterbore portion 20 larger than that of the substrate 3 inside the substrate holder 4, the heat transfer path from the substrate holder 4 to the substrate 3 can be lengthened, and the substrate 3 of the substrate holder 4 can be supported. It becomes possible to make the temperature of the portion almost the same as the temperature of the substrate 3. [0044] Example 3 FIG. 5 shows a third example. In this second embodiment, by reducing the cross-sectional area of the support rod 11 and forming a thin part 10b by thinning a part of the substrate support 10, the heat transfer cross-sectional area of the substrate support 10 is reduced, and the substrate support 10 is made thinner. The influence of heat transfer inside the support body 10 is suppressed to a small level. [0045] Example 4 FIG. 6 shows a fourth example. When the substrate holder 4 is heated, for example, by an external high-frequency heating coil 7, if the substrate support 10 is made of the same material as a so-called susceptor, the temperature of the substrate support 10 itself increases, and the peripheral edge of the substrate 3 becomes hot. There is a risk of it becoming. In such a case, in the fourth embodiment, the substrate support 10 is made of a material such as glass or ceramic that is not heated by the high-frequency heating coil 7. Not done. [0046] Note that the support rods or support walls 11 do not need to be present over the entire circumference of the substrate, and may be supported at three points, for example. Therefore, the substrate support 10 itself does not need to be provided in a ring shape over the entire circumference of the substrate 3. [0047] Example 5 FIG. 7 shows a fifth example. In this fifth embodiment, from the viewpoint of minimizing the influence of heat transfer transmitted through the substrate support 10 from the substrate holder 4 to the substrate 3 as described above,
For example, the substrate support 10 is made of a material with low thermal conductivity (eg, glass, ceramic, etc.). Of course, the support rod or the support wall 11 may also be made of a material with low thermal conductivity. [0048] Example 6 FIG. 8 shows a sixth example. In this sixth embodiment,
The convex portion 10c is formed in the part of the substrate support 10 that supports the substrate 3, and the substrate 3 is supported by a point (support point) or a line (support wall), so that the heat transfer area can be extremely reduced, and the substrate support 10
It is hardly affected by heat transfer from Also,
As shown in FIG. 9, if the support rod 11 and the convex portion 10c are each formed at three points, the influence of heat transfer from the substrate support 10 can be further reduced. [0049] Example 7 In the example shown in FIGS. 10 to 13, a counterbore portion 20 having a diameter larger than that of the substrate 3 is provided inside the substrate holder 4. In the seventh embodiment shown in FIG. 10, as in the embodiment shown in FIG.
1. The substrate support 10 is integrally formed. and,
The peripheral edge of the substrate 3 is connected to the substrate support portion 4a of the substrate holder 4.
Supported by [00501 Example 8 FIG. 11 shows an eighth example. In this eighth embodiment, the substrate holder 4 is provided with a counterbore portion 20 having a diameter larger than the diameter of the substrate 3, and the peripheral edge of the substrate 3 is is supported. [0051] Example 9 In a ninth example shown in FIG. 12, a part of the substrate support 4a of the substrate holder 4 is made thinner in order to obtain the same effect as the substrate support 10 having a small thermal conductivity in FIG. Thin wall part 4
b is formed to reduce the heat transfer cross-sectional area. [0052] Example 10 In the tenth example shown in FIG.
C to reduce the heat transfer cross-sectional area. By forming the substrate holder in this manner, the in-plane temperature distribution of the substrate 3 can be made uniform. [0053] Embodiment 11 FIGS. 14 and 15 show an 11th embodiment and modifications thereof. These embodiments and modifications are improvements on the embodiments shown in FIGS. 7 and 11, and as will be described later. The material of the substrate support 10 is characterized by: The other configurations are the same as those in FIGS. 7 and 11, and by making the diameter of the counterbore portion 20 larger than the diameter of the substrate 3, the heat transfer path transmitted through the substrate support 10 is lengthened.
Heat transfer from the substrate holder 4 to the substrate support 10 is reduced to prevent the peripheral edge of the substrate 3 from becoming high temperature. Then, from the substrate holder 4, the substrate support 1 is connected to the substrate 3.
Since the heat conduction through the substrate 0 is reduced, heat is transferred from the substrate holder 4 to the substrate 3 through radiation and the gas present between the substrate 3 and the substrate holder 4. (0054) Furthermore, in this embodiment, as mentioned above, the material of the substrate support 10 is characterized by a temperature difference between the peripheral portion of the substrate 3 and other portions even with respect to heat transfer by radiation and gas. In other words, the substrate support 10 is made of a material having an emissivity approximately equal to the emissivity of the substrate 3, or
Since the emissivity depends on the surface roughness of the member, the surface roughness of the substrate support 10 is set to be approximately equal to the radiation of the substrate 3. Regarding the relationship between surface roughness and emissivity, if the surface is flat and the surface roughness is small, such as a mirror surface, the emissivity will be small, and if the surface roughness is large, the emissivity will be high. [0055] In other words, if the substrate 3 is silicon, for example, and the substrate support 10 having an emissivity approximately equal to that of silicon is used, the substrate holder 4 is heated by the heater, and the substrate support 10 and the substrate support 10 are heated by the radiation. Although the temperature of the substrate 3 is increased, since the emissivity of both substrates is approximately equal, the temperature of the substrate support 1 is increased.
0 and the substrate 3 are heated to the same temperature, the temperature difference between the periphery and other parts of the substrate 3 becomes very small, and the in-plane temperature distribution of the substrate 3 becomes extremely uniform. [0056] Further, the substrate support 10 may be formed of a material having a heat capacity per unit area that is approximately equal to the heat capacity per unit area of the substrate 3. In this case, if the heat capacities per unit area of the substrate 3 and the substrate support 10 are approximately equal, the following remarkable effects can be obtained. [0057] In the process of starting heating with a heater and increasing the temperature of the substrate 3, if the heat capacities per unit area are significantly different, the temperature difference between the substrate 3 and the substrate support 10 will increase, and the in-plane temperature difference of the substrate 3 will increase. increases, and thermal stress occurs. On the other hand, if the heat capacity per unit area is approximately equal, the above-mentioned thermal stress will hardly occur, and therefore slip within the crystal will not occur. [0058] Embodiment 12 FIGS. 16 and 17 show a twelfth embodiment and a modification thereof, which is an improvement of the embodiment shown in FIGS. 14 and 15. Figure 16
In the twelfth embodiment shown in FIG. 1, a member with low thermal conductivity is interposed as the support rod 11, and in the modified example shown in FIG. , a member having the same emissivity or heat capacity per unit area as the substrate 3, and a member having low thermal conductivity as the second substrate support 10d.
The heat conduction through 0e is further reduced. [0059] In these embodiments, it is easiest to form the substrate support 10 from a member made of the same material as the substrate 3, as a member having the same emissivity and heat capacity as the substrate 3. For example, if the substrate 3 is a silicon substrate, the substrate support 10 is formed of this silicon substrate. In other words, the peripheral portion of the substrate 3 may be supported by a dummy substrate made of the same material as the substrate 3. [0060] Example 13 FIG. 18 shows a thirteenth example. In a vapor phase growth apparatus, the temperature of the peripheral edge of the substrate 3 that is in contact with the support portion of the substrate support 10 that supports the substrate 3 tends to drop easily due to contact thermal resistance that occurs between the substrate support 10 and the substrate 3. be. Therefore, a projection 10f projecting upward is provided in a portion of the substrate holder 4 located directly below this support portion. In other words, the distance between the support part of the substrate support 10 on which the substrate 3 is placed and the substrate holder 4 is brought closer, and the substrate support 1
0, the temperature of the supporting part of the substrate 3 is increased, and the substrate 3 becomes the substrate support 1.
This prevents the temperature of the part in contact with 0 from decreasing. [0061] Embodiment 14 FIG. 19 shows a 14th embodiment. In the fourteenth embodiment, a downwardly protruding protrusion 10g is provided on the support portion of the substrate support 10 on which the substrate is placed. In other words, similarly to the thirteenth embodiment, the substrate support 1 on which the substrate 3 is placed
The distance between the supporting portion of the substrate 3 and the substrate holder 4 is brought closer to increase the temperature of the supporting portion, thereby preventing the temperature of the portion of the substrate 3 in contact with the substrate support 10 from decreasing. [0062] Next, the degree of temperature rise of the protrusions 10f and 10g portions of the substrate support 10 of the 13th and 14th embodiments shown in FIGS. This will be explained in detail based on experimental data by the inventors. [0063] First, in FIG. 20, the temperature of the substrate 3 (the portion indicated by T1 in FIGS. 18 and 19) and the protrusions 10f and 10 are plotted on the horizontal axis.
This is a characteristic diagram in which the temperature difference ΔT between the temperatures of the g portion (the portion indicated by T2 in FIGS. 18 and 19) is plotted, and the slip length is plotted on the vertical axis. As shown in FIG. 20, it can be seen that when the temperature difference T is smaller than 10° C., slip occurs significantly. Also, when the temperature difference ΔT is greater than 200° C., slipping occurs significantly. This is because when the temperature difference T is smaller than 10°C, the contact thermal resistance that occurs between the substrate 3 and the substrate support 10 at the peripheral edge of the substrate 3 that contacts the substrate support 10 causes the substrate to This occurs because the temperature decreases at the peripheral edge of the substrate 3 and the in-plane temperature distribution of the substrate 3 becomes non-uniform, which cannot be fully corrected. If the temperature difference ΔT is greater than 200°C, the substrate support 1 of the substrate 3
0, the temperature decreases at the periphery of the substrate 3 due to the contact resistance generated between the substrate 3 and the periphery of the substrate 3. This occurs because the internal temperature distribution becomes uneven. [0064] From FIG. 20, by setting the temperature of the log portion of the protrusion 10f at a temperature of about 10°C to 200°C higher than the temperature of the substrate 3, the in-plane temperature distribution of the substrate 3 can be made uniform, and the occurrence of slip can be minimized. It can be seen that it is possible to reduce the amount. [0065] Specifically, as a means for setting the temperature of the protrusions 10f and 10g to a temperature higher than the temperature of the substrate 3 by about 10°C to 200°C, first, as will be described later, the substrate holder 4 or the substrate support is used. Body 10 and protrusions 10f, 10g
Set the ratio of the distance between the substrate holder 4 and the substrate 3 (the section indicated by H2 in FIGS. 18 and 19) to the distance between the substrate holder 4 and the substrate 3 (the section indicated by H2 in FIGS. 18 and 19) to a predetermined value. There is a way to do it. A second method is to separately control the temperature of the portion of the substrate support 10 that is in contact with the substrate 3 and the (substrate) temperature of other portions, as shown in FIG. [0066] That is, as shown in FIG. 21, the heater 6 is divided into two parts, each consisting of heaters 6a and 6b, and these heaters 6a and 6b are connected to respective power supplies 8a and 8b, and a radiation thermometer or thermoelectric Temperature control devices 9a and 9b are provided which have equal temperature measuring means and can control the outputs of power supplies 8a and 8b of heaters 6a and 6b. and,
For example, the temperature near the center and around the periphery of the substrate 3 is measured by a radiation thermometer, and the outputs of the heaters 6a and 6b are controlled so that the temperature distribution is uniform within the surface of the substrate. The temperature of the peripheral edge of the substrate may be determined by directly measuring the temperature of the portion of the substrate support 10 that is in contact with the substrate 3 using a thermocouple or the like. The heater 6 may be divided into two or more parts to perform fine temperature control, or the heater 6 may be divided into two parts or more, and the heat generation efficiency can be partially varied by changing the density of the winding of the heater, etc. But it's okay. [0067] Next, in FIG. 22, the horizontal axis shows the distance between the substrate holder 4 or the substrate support 10 and the protrusions 10f and 10g (portions indicated by Hl in FIGS. 18 and 19), and the distance between the substrate holder 4 and the substrate. 18 and 19 (portion indicated by H2 in FIGS. 18 and 19), and the slip length is plotted on the vertical axis. As shown in FIG. 21, it can be seen that when the ratio H is smaller than 2, slip occurs significantly. Also, when the ratio H is greater than 20, slipping occurs significantly. this is,
When the ratio H is smaller than 2, the temperature at the periphery of the substrate 3 increases due to contact thermal resistance generated between the substrate 3 and the substrate support 10 at the periphery of the substrate 3 in contact with the substrate support 10. This occurs because the in-plane temperature distribution of the substrate 3 becomes non-uniform due to a decrease in temperature, which cannot be fully corrected. Also, the ratio H is 2
If it is larger than 0, the temperature drop caused by the temperature drop at the peripheral edge of the substrate 3 due to the contact thermal resistance generated between the substrate 3 and the substrate support 10 is overcompensated, and eventually the substrate 3
[0068] FIG. 22 shows the relationship between the substrate holder 4 or the substrate support 10 and the protrusions 10f and 10g. The ratio (H2/H1) of the distance between the substrate holder 4 and the substrate 3 (the section indicated by H1 in FIGS. 18 and 19) and the distance between the substrate holder 4 and the substrate 3 (the section indicated by H2 in FIGS. 18 and 19) is set to 2. It can be seen that by setting the temperature to 20 to 20, the in-plane temperature of the substrate 3 can be made uniform and the occurrence of slip can be extremely reduced. Note that, as in the embodiment of FIG. 19, the protrusion Log may be extended to almost the entire area of the substrate support 10. [0069] Also, as described above, the substrate support 1 of the substrate 3
Due to the contact resistance that occurs between the substrate 3 and the substrate support 10 at the periphery where the substrate 3 contacts 0, a phenomenon occurs in which the temperature decreases at the periphery of the substrate 3, and the in-plane temperature distribution of the substrate 3 becomes uneven. However, in such a case, the thin substrate support 10 warps due to stress caused by non-uniform in-plane temperature distribution. This warping changes the distance between the substrate support 10 and the substrate holder 4, which results in uneven temperature distribution within the surface of the substrate 3. Therefore, in the embodiment shown in FIG. 23, in order to make even a thin substrate support 10 structurally difficult to warp, a rib 10h is formed on the peripheral edge of the thin substrate support 10.
However, it is possible to increase the structural strength against warping. [00701] As another example of a structure that is less likely to warp, the substrate support 10 may be made of the same material or divided into a plurality of parts 10j and 10k in the circumferential direction, as shown in FIG. In this way, by dividing the substrate 3 into a plurality of parts, it is possible to make the structure less likely to warp, and also to increase the contact resistance at the divided contact surfaces, which reduces the temperature of the part of the substrate 3 that contacts the substrate support 10. can be made smaller. [0071] Embodiment 15 FIG. 25 shows a 15th embodiment. In this 15th embodiment, the through hole 10a of the substrate support 10 is formed to have a substantially similar shape to the substrate 3, and the gap between the substrate 3 and the substrate support member 10 is eliminated, so that the material gas can flow around the substrate to the back surface of the substrate. This prevents the deposition of [0072] Embodiment 16 Next, a 16th embodiment of the present invention will be described. Figure 26
This shows a substrate support member according to a 16th embodiment of the present invention. In this substrate support member, the peripheral edge of the substrate 3 is supported by a substrate support 10 made of glass or ceramic with low thermal conductivity, and this substrate support 10 is placed on the substrate holder 4. . [0073] Therefore, in this 16th embodiment, since the substrate is supported via a member having low thermal conductivity with respect to the heated substrate holder, the substrate support 1 is attached to the peripheral edge of the substrate.
The influence of heat transmitted through 0 can be suppressed to a small level. [0074] Example 17 FIG. 27 shows a seventeenth example. In this embodiment, a convex portion 10C is provided on the support portion of the substrate 3 in the substrate support 10.
is formed to reduce the heat transfer cross-sectional area. In addition, in this Example 16 and 17, a through hole 10a having a diameter slightly smaller than the diameter of the substrate 3 is provided in the center of the substrate support 10,
Although the substrate support 10 is configured to support only the peripheral edge of the substrate 3, it is not necessary to provide the substrate support 10 in a ring shape over the entire peripheral edge of the substrate 3, and as shown in FIG. For example, three may be provided to support the substrate 3. [0075] Embodiment 18 Next, an 18th embodiment of the present invention will be described. Figure 29
36 to 36 show a substrate support member according to an 18th embodiment of the present invention, and this embodiment is concerned with countermeasures against warping of the substrate 3 during the process of vapor phase growth on the surface of the substrate 3. [00761 The warpage of the substrate 3 according to various experiments conducted by the present inventors is related to the heating temperature and emissivity of the substrate 3, and varies depending on the heating temperature and emissivity, respectively, but the warpage is almost constant depending on the heating temperature and emissivity. occurs. It has been confirmed that the degree of warpage is approximately in the range of 10 mR to 100 mR. [0077] Therefore, as shown in FIG.
For example, if the warpage of the substrate is measured in advance and the portion of the counterbore portion 20 of the substrate holder 4 facing below the substrate 3 is formed to have a curvature of approximately 10 mR to 100 mR so as to be approximately the same as the curvature of the warp of the substrate 3, Since the distance between the substrate holder 4 and the substrate holder 4 becomes uniform over the entire surface of the substrate 3 when the substrate 3 is warped, the in-plane temperature distribution of the substrate 3 can be kept uniform during crystal growth. [0078] Furthermore, in the example shown in FIGS. 30 and 31, through holes 4d and 4e are formed in the substrate holder 4, and a second gas supply unit 19 is connected to one of the through holes 4d via the introduction pipe 18. ing. Then, from the second gas supply unit 19, a gas having a lower thermal conductivity than the carrier gas (for example, N2, etc.) is supplied to the second gas supply unit 19.
The thermal conductivity is about 1/10 lower than that of 2. However, N2 (not limited to N2) is supplied to the space of the counterbore 20 formed on the back surface of the substrate 3. Moreover, the gas supplied to the space of the counterbore portion 20 is discharged from the through hole 4e. Furthermore, in this example, general carbon is used to make the emissivity of the substrate holder 4 relatively high. [0079] In this way, when the gas existing between the substrate holder 4 and the substrate 3 is a gas with poor thermal conductivity, the rate of heat transfer from the substrate holder 4 to the substrate 3 by the gas is extremely small, and the heat transfer is by radiation. becomes dominant. Even if the substrate 3 is warped and the distance between the substrate holder 4 and the substrate 3 is no longer constant as shown in FIG. 31, the heat conduction by radiation remains almost constant regardless of the distance between the substrate holder and the substrate 3. Therefore, the in-plane temperature distribution of the substrate 3 can be made uniform. [00801 Such an effect is shown in the characteristic diagram shown in FIG. 3. When the distance d between the substrate holder 4 and the substrate 3 is 1 mm or less, heat conduction by gas is the main cause, and the substrate temperature T changes with respect to the change in the distance d. While the change is sensitive, the above interval d
This can be understood from the fact that when d is 1 mm or more, as the distance increases, heat conduction by radiation becomes more dominant than heat conduction by gas, and as a result, changes in substrate temperature T become less sensitive to changes in distance d. can. In addition, Figure 32
As shown in FIG. 3, it is not necessary to provide the through hole 4e for gas discharge, and in that case, the gas is discharged from the contact portion between the substrate holder 4 and the substrate 3. [0081] Furthermore, when using a gas with low thermal conductivity, the same effect can be obtained by using an inert gas such as argon, xenon, helium, etc., CF4, carbon dioxide gas, halogen gas, etc. in addition to nitrogen gas. [0082] Furthermore, in the configuration shown in FIG. 30 or FIG. 32, even if the back surface of the substrate 3 is purged with the same gas as the carrier gas, even if it is purged with a gas having a lower thermal conductivity than the carrier gas as described above, even if the purge is For example, it is possible to prevent the source gas from flowing around to the back surface of the substrate 3 and changing the amount of gas heat transfer from the substrate support 10 to the substrate 3, thereby preventing the temperature of the substrate 3 from fluctuating. It is also possible to prevent positions. [0083] Also in the embodiments shown in FIGS. 29 to 32, if counterbore portions 20 having a larger diameter than the substrate 3 are provided as shown in FIGS. 32 to 36 as in the previous embodiments, each It is possible to have the functions and effects of the embodiments. [0084] Embodiment 19 Next, a 19th embodiment of the present invention will be described. In this 19th embodiment, the support rod 11 between the substrate holder 4 and the substrate support 10 is eliminated so that there is no contact between them. In other words, as shown in FIG. 37, the substrate support 10 is supported from the reactor 2 by the support 13. Further, as shown in FIG. 38, instead of supporting the substrate support 10 from the reactor 2, it may be supported from the rotating shaft 5 by the support 13, or from the lower base plate 1. In this embodiment, direct heat conduction from the substrate holder 4 to the substrate 3 is completely blocked, so that the temperature of the substrate 3 can be made uniform to the periphery. FIG. 39 shows a modification of the reaction tube constituting the vapor phase growth apparatus of the present invention. [0085] In this modification, for example, the surface roughness of the inner wall 2C of the reaction tube 2 housing the substrate support member is made small (near mirror finish), and the emissivity of the inner wall 2c is made small. In this case, the temperature of the crystal substrate 3 can be made more uniform. [0086] In addition, the reaction tube 2 can be heated without changing the surface roughness.
The same effect as described above can be obtained by using a material with a low emissivity or coating the inner surface of the reaction tube 2 with a material having a low emissivity. [0087] As explained above, the embodiments and modifications are as follows:
Although the present invention relates to a type of vapor phase growth apparatus in which one substrate 3 is supported in a so-called vertical reaction vessel 2, the present invention is applicable to all types of vapor phase growth apparatuses, and other types will be described below. The vapor phase growth apparatus will be explained, but the same parts as in the previous embodiment are given the same reference numerals and the explanation will be omitted. [0088] The example shown in FIG. 40 is a so-called barrel type vapor phase growth apparatus, and the substrate holder 4 is a truncated pyramid (a truncated quadrangular pyramid in this drawing), and a plurality of substrates 3 can be supported on the outer peripheral surface of the substrate holder 4. It is configured. The example shown in FIG. 41 is a type using a horizontal reaction vessel 2, and gas flows from the gas supply port 2a on the left side in the figure to the right side. The example shown in FIG. 42 is a modification of the substrate support 10, and one substrate support 10 is configured to support a plurality of substrates 3. Next, the mechanism and process for loading and unloading the substrate 3 into the reactor 2 will be described with reference to FIGS. 43 and 44. [0089] As shown in FIGS. 43 and 44, the reactor 2
A substrate holder 4 and a substrate support 10 supporting the substrate 3 are placed on the inner support shaft 5 . The support shaft 5 is movably inserted in an airtight manner through a bellows 30 disposed at the lower part of the reactor 2, and is moved up and down by a vertical movement device 31 connected to the lower end. [00901 A preliminary chamber 33 is formed on the lower side of the reactor 2 via a gate valve 32, and a substrate support receiver 34 is disposed within the preliminary chamber 33 so as to be movable in the direction of arrow A in the figure. ing. In this substrate support receiver 34,
A conveyance rod 36 is connected to the outside of the reserve material 33 via a bellows 35 in a manner that allows the conveyance rod to be detachably connected in a confidential manner. A conveying device 37 is connected to the outer end of the conveying rod 36 . [00911 As shown in FIG. 44, the substrate support receiver 34
is moved forward by the transfer device 37 to be moved into the reactor 2 through the gate valve 32. and,
The substrate support receiver 34 carries the substrate support member 10 and the substrate 3 placed on the substrate support receiver 34 onto the substrate holder 4 which has been lowered to a predetermined position by the vertical movement device 31.
Return to the preliminary room 33. Thereafter, the substrate support member and the substrate 3 are lifted into the furnace by the vertical movement device 31, and a vapor phase growth process is performed. When the vapor phase growth process is completed, the substrate support 10 and the substrate 3 are moved to the preliminary chamber 3 by an operation opposite to that described above.
to be carried out. [0092] The preliminary chamber 33 has a lid 39 removably disposed on its upper part via an O-ring 38, and a lid 39 on the lower part thereof.
An exhaust port 33a is formed to exhaust unreacted gas within the chamber 3 and to keep the internal pressure constant. [0093] As described above, in this transfer device, the substrate 3 is transferred to the reaction furnace 2 with the substrate 3 attached to the substrate support 10.
Since it can be taken in and out, by holding the substrate support 10, the substrate 3 in a high temperature state can be transported without contact, and workability is significantly improved. It goes without saying that the present invention is not limited to the above-described embodiments and modifications, and can be implemented in various modifications without departing from the spirit thereof. [0094]

[Effects of the Invention] As detailed above, according to the present invention, the in-plane temperature distribution of the substrate can be made uniform, so dislocations such as slips do not occur in the crystal substrate, resulting in good device characteristics. becomes.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view showing an embodiment of a vapor phase growth apparatus of the present invention.

FIG. 2 is a schematic cross-sectional view showing an enlarged view of the substrate support member in FIG. 1;

FIG. 3 is a characteristic diagram showing the relationship between the distance d between the substrate holder and the substrate and the substrate temperature T.

FIG. 4 is a schematic diagram of a substrate support member showing a second embodiment of the present invention.

FIG. 5 is a schematic diagram of a substrate support member showing a third embodiment of the present invention.

FIG. 6 is a schematic diagram of a vapor phase growth apparatus showing a fourth embodiment of the present invention.

FIG. 7 is a schematic diagram of a substrate support member showing a fifth embodiment of the present invention.

FIG. 8 is a schematic diagram of a substrate support member showing a sixth embodiment of the present invention.

FIG. 9 is a schematic diagram of a substrate support member showing a modification of the sixth embodiment of the present invention.

FIG. 10 is a schematic diagram of a substrate support member showing a seventh embodiment of the present invention.

FIG. 11 is a schematic diagram of a substrate support member showing an eighth embodiment of the present invention.

FIG. 12 is a schematic diagram of a substrate support member showing a ninth embodiment of the present invention.

FIG. 13 is a schematic diagram of a substrate support member showing a tenth embodiment of the present invention.

FIG. 14 is a schematic diagram of a substrate support member showing an eleventh embodiment of the present invention.

FIG. 15 is a schematic diagram of a substrate support member showing a modification of the eleventh embodiment of the present invention.

FIG. 16 is a schematic diagram of a substrate support member showing a twelfth embodiment of the present invention.

FIG. 17 is a schematic diagram of a substrate support member showing a modification of the twelfth embodiment of the present invention.

FIG. 18 is a schematic diagram of a substrate support member showing a thirteenth embodiment of the present invention.

FIG. 19 is a schematic diagram of a substrate support member showing a fourteenth embodiment of the present invention.

FIG. 20 is a characteristic diagram showing the relationship between substrate temperature and slip.

FIG. 21 is a schematic diagram showing an embodiment of substrate temperature control of the present invention.

FIG. 22 is a characteristic diagram showing the relationship between the length and slip of the protruding means of the present invention.

FIG. 23 is a schematic diagram of a substrate support member showing a modification of the fourteenth embodiment of the present invention.

FIG. 24 is a schematic diagram of a substrate support member showing a modification of the fourteenth embodiment of the present invention.

FIG. 25 is a schematic diagram of a substrate support member showing a fifteenth embodiment of the present invention.

FIG. 26 is a schematic diagram of a substrate support member showing a 16th embodiment of the present invention.

FIG. 27 is a schematic diagram of a substrate support member showing a seventeenth embodiment of the present invention.

FIG. 28 is a schematic diagram of a substrate support member showing a modification of the seventeenth embodiment of the present invention.

FIG. 29 is a schematic diagram of a substrate support member showing an 18th embodiment of the present invention.

FIG. 30 is a schematic diagram of a substrate support member showing a modification of the 18th embodiment of the present invention.

FIG. 31 is a schematic diagram of a substrate support member showing a modification of the 18th embodiment of the present invention.

FIG. 32 is a schematic diagram of a substrate support member showing a modification of the 18th embodiment of the present invention.

FIG. 33 is a schematic diagram of a substrate support member showing a modification of the 18th embodiment of the present invention.

FIG. 34 is a schematic diagram of a substrate support member showing a modification of the 18th embodiment of the present invention.

FIG. 35 is a schematic diagram of a substrate support member showing a modification of the 18th embodiment of the present invention.

FIG. 36 is a schematic diagram of a substrate support member showing a modification of the 18th embodiment of the present invention.

FIG. 37 is a schematic diagram of a vapor phase growth apparatus showing a nineteenth embodiment of the present invention.

FIG. 38 is a schematic diagram of a vapor phase growth apparatus showing a modification of the nineteenth embodiment of the present invention.

FIG. 39 is a schematic diagram showing a modification of the vapor phase growth apparatus of the present invention.

FIG. 40 is a schematic diagram showing a modification of the vapor phase growth apparatus of the present invention.

FIG. 41 is a schematic diagram showing a modification of the vapor phase growth apparatus of the present invention.

FIG. 42 is a schematic diagram showing a modification of the vapor phase growth apparatus of the present invention.

FIG. 43 is a schematic diagram illustrating an embodiment showing loading and unloading of substrates in the vapor phase growth apparatus of the present invention.

FIG. 44 is a schematic diagram illustrating an embodiment showing loading and unloading of substrates in the vapor phase growth apparatus of the present invention.

FIG. 45 is a schematic diagram showing an example of a conventional vapor phase growth apparatus.

FIG. 46 is a schematic diagram showing an example of a method for supporting a substrate in a conventional vapor phase growth apparatus.

[Explanation of symbols]

1 Base plate 2 Reactor (reaction vessel) 2a Supply port 2b Exhaust port 2c Inner wall with small surface roughness 3 Board 4 Substrate holder (first member) 4a Board support member 4b Thin wall part 4c Convex part 4d Through hole 4e Through hole 5 Support shaft (rotating shaft) 6 Heater 7 High frequency coil (heating means) 9 Gas supply device 10 Substrate support (second member) 10a Through hole 10b Thin wall part 10c Convex part 10f Protrusion (protrusion means) 10g Protrusion (protrusion means) 11 Support rod (support member) 13 Support

[Figure 3]

[Figure 6]

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[Figure 25]

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[Figure 12]

[Figure 13]

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[Figure 15]

[Figure 16]

[Figure 17]

[Figure 18]

[Figure 19]

[Figure 20]

[Figure 28]

[Figure 23]

[Figure 24]

[Figure 29]

[Figure 31]

[Figure 21]

[Figure 22]

[Figure 26]

[Figure 27]

[Figure 32]

[Figure 33]

[Figure 34]

[Figure 35]

[Figure 37]

[Figure 36]

[Figure 38]

[Figure 39]

[Figure 40]

[Figure 41]

[Figure 42]

[Figure 43]

[Figure 44]

[Figure 45]

[Figure 46]

Claims (55)

[Claims] 1. A vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means, and a thin film is grown on the substrate by a supplied gas, wherein the substrate support member is heated by the heating means. a first member that is heated to a predetermined temperature; a second member that supports the substrate at its peripheral edge; and a second member that is connected to the first member outside the outermost peripheral portion of the substrate. 1. A vapor phase growth apparatus comprising: a support member for supporting the vapor phase growth apparatus. 2. A vapor phase growth apparatus in which a substrate is placed on a substrate support member that is heated by a heating means, and a thin film is grown on the substrate by a supplied gas, wherein the substrate support member is placed on a substrate support member that is heated by a heating means. also forms a counterbore with a large diameter,
A vapor phase growth apparatus characterized in that a substrate support portion is formed such that the substrate support member supports a peripheral portion of the substrate via the counterbore portion. 3. A vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means, and a thin film is grown on the substrate by a supplied gas, wherein the substrate support member is heated by the heating means. a first member heated to a predetermined temperature; a counterbore portion formed in the first member having a diameter larger than the diameter of the substrate; a second member supported by the first member; a vapor phase growth apparatus comprising: a second member supported by the first member; 4. A vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means, and a thin film is grown on the substrate by a supplied gas, wherein the substrate support member is heated by the heating means. A first member that is heated to a predetermined temperature, and a member that has a lower heat transfer coefficient than the first member and is placed on the first member and supports the peripheral edge of the substrate. 2. A vapor phase growth apparatus comprising: 5. A vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means, and a thin film is grown on the substrate by a supplied gas, wherein the substrate support member is heated by the heating means. a first member heated to a predetermined temperature; and a first member formed on the first member, having a curvature approximately equal to the curvature of warping when the substrate is heated and warped, and facing the substrate surface. A vapor phase growth apparatus comprising: a counterbore portion having a depth of 1 mm or more. 6. A vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means, and a thin film is grown on the substrate by a supplied first gas, wherein the substrate support member has a counterbore. a first member in which a portion is formed and heated to a predetermined temperature by the heating means; and by placing the substrate on the first member, the counterbore portion is surrounded by the first member and the substrate. a space formed by
A vapor phase growth apparatus comprising: a gas supply means for supplying a second gas to the space. 7. A vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means, and a thin film is grown on the substrate by a supplied gas, wherein the substrate support member is heated by the heating means. a first member heated to a predetermined temperature; a second member supporting the substrate at its peripheral edge; the second member facing the first member; A vapor phase growth apparatus comprising: a support member for opposing support in a non-contact manner; 8. A vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means, and a thin film is grown on the substrate by a supplied gas, wherein the substrate support member is heated by the heating means. a first member that is heated to a predetermined temperature; and a member that supports the peripheral edge of the substrate in order to support the substrate with respect to the first member and has an emissivity that is approximately equal to the emissivity of the substrate. A vapor phase growth apparatus comprising: a second member; and a second member. 9. A vapor phase growth apparatus in which a substrate is placed on a substrate support member heated by a heating means, and a thin film is grown on the substrate by a supplied gas, wherein the substrate support member is heated by the heating means. a first member that is heated to a predetermined temperature; and a unit that supports the peripheral edge of the substrate in order to support the substrate with respect to the first member, and that is approximately equal to the thermal appearance per unit area of the substrate. A second member made of a member having a thermal profile per area. 10. Claim 1, wherein the first and second members and the support member are integrally formed in advance.
The vapor phase growth apparatus described. 11. The vapor phase growth apparatus according to claim 1, wherein at least two of the first and second members and the support member are integrally formed in advance. 12. The vapor phase growth apparatus according to claim 3, wherein the first member and the second member are integrally formed in advance. 13. The vapor phase growth apparatus according to claim 7, wherein the second member and the support member are integrally formed in advance. 14. At least one of the second member and the supporting member is made of a material having a lower thermal conductivity than the first member. The vapor phase growth apparatus described. 15. The second member is made of a material having a lower thermal conductivity than the first member. vapor phase growth equipment. 16. Claim 1 or Claim 7, characterized in that at least a portion of at least one of the second member and the support member is formed with a thin wall portion for reducing its cross-sectional area. vapor phase growth equipment. 17. The vapor phase growth apparatus according to claim 2, wherein at least a portion of the substrate support portion is formed with a thin wall portion for reducing its cross-sectional area. 18. Claim 3, claim 4, claim 8, or claim 9, characterized in that a thin wall portion is formed in at least a portion of the second member force to reduce its cross-sectional area. vapor phase growth equipment. 19. The air conditioner according to claim 1, wherein at least three of the supporting members are rod-shaped members, and the second member is supported on the first member at three or more points. Phase growth device. 20. Claims 1 and 3, wherein the second member is a plate-like member and is provided with a through hole having a diameter slightly smaller than the diameter of the substrate. The vapor phase growth apparatus according to claim 4, claim 7, claim 8, or claim 9. 21. The second member is a block-shaped member, and at least three of the second members are placed on the first member. A vapor phase growth apparatus according to claim 8 or 9. 22. Claims 1 and 3, wherein a portion of the second member in contact with the substrate is formed in a convex shape.
A vapor phase growth apparatus according to any one of claims 4, 7, 8, or 9. 23. The vapor phase growth apparatus according to claim 2, wherein a portion of the substrate support portion that contacts the substrate is formed in a convex shape. 24. Any one of claims 1, 3, 4, 7, and 9, characterized in that the second member has a radiation coefficient substantially equal to that of the substrate. A vapor phase growth apparatus described in . 25. Claim 1, wherein the heat capacity of the second member is approximately equal to the heat capacity of the substrate.
A vapor phase growth apparatus according to any one of claims 3, 4, 7, or 8. 26. The second member is made of the same material as the substrate. The vapor phase growth apparatus according to claim 8 or 9. 27. The substrate surface and the first member surface are arranged at a distance of 1 mm mm or more below each other. The vapor phase growth apparatus according to claim 9. 28. The vapor phase growth apparatus according to claim 2, wherein the opposing distance between the substrate surface and the counterbore surface is 1 mm or more. 29. The heating means is disposed on a side opposite to the substrate with respect to the first member. Item 6,
A vapor phase growth apparatus according to any one of claims 7, 8, and 9. 30. The vapor phase growth apparatus according to claim 2, wherein the heating means is disposed on the opposite side of the substrate with respect to the substrate support member. [31] The radius of curvature of the counterbore portion is 10 m to 1 m.
6. The vapor phase growth apparatus according to claim 5, wherein the vapor phase growth apparatus is set within a range of 0.00 m. 32. The method according to claim 6, wherein at least one kind selected from nitrogen gas, inert gas, carbon dioxide gas, halogen gas, chlorofluorocarbon gas, and CF4 is used as the gas having low thermal conductivity. Vapor phase growth equipment. 33. The vapor phase growth apparatus according to claim 7, wherein the support member is attached to an inner wall of a reaction tube provided so as to cover the substrate support member. 34. Claim 7, wherein the support member is attached to a base plate that supports a reaction tube provided so as to cover the substrate support member.
The vapor phase growth apparatus described. 35. The vapor phase growth apparatus according to claim 7, wherein the support member is attached to a support shaft that supports the substrate support member. 36. The substrate supporting member is disposed within a reaction vessel, and the surface roughness of the inner wall of the reaction vessel is set to be smaller than that of other parts to reduce the radiation rate. Claim 2, Claim 3, Claim 4, Claim 5,
A vapor phase growth apparatus according to any one of claims 6, 7, 8, or 9. 37. The substrate support member is disposed within a reaction vessel, and further includes a substrate transfer means for moving the substrate between the inside of the reaction vessel and the outside of the reaction vessel, and the substrate transfer means is configured to move the substrate between the inside of the reaction vessel and the outside of the reaction vessel. Claims 1 and 3, characterized in that the member No. 2 and the substrate are conveyed and moved integrally.
The vapor phase growth apparatus according to claim 4, claim 7, claim 8, or claim 9. 38. The vapor phase growth apparatus according to claim 6, wherein the second gas is made of a gas having a lower thermal conductivity than the first gas. 39. A substrate placed in a reaction vessel and on which a thin film is to be grown is supported at its periphery by a substrate support, and the substrate support is heated to a predetermined temperature by a heating means. After the substrate is further supported outside the outermost periphery, the heating means heats the substrate holder to a predetermined temperature while supplying gas into the reaction vessel to grow a thin film on the surface of the substrate. vapor phase growth method. 40. A substrate placed in a reaction vessel and on which a thin film is to be grown on the surface thereof is supported by a substrate holder having a counterbore portion having a diameter larger than that of the substrate formed therein to support the substrate at its periphery. A vapor phase growth method characterized in that the substrate holder is then heated to a predetermined temperature by a heating means while supplying gas into the reaction vessel to grow a thin film on the surface of the substrate. 41. A substrate placed in a reaction vessel and on which a thin film is to be grown is supported at its periphery by a substrate support, the substrate support being heated to a predetermined temperature by a heating means, The substrate is supported by a substrate holder having a counterbore portion having a diameter larger than that of the substrate, and then the heating means heats the substrate holder to a predetermined temperature and gas is supplied into the reaction vessel to cool the substrate surface. A vapor phase growth method characterized by growing a thin film. 42. A substrate holder heated to a predetermined temperature by a heating means, which is made of a material having a lower thermal conductivity than the substrate holder, and is placed in a reaction vessel to hold a substrate on the surface of which a thin film is grown. A thin film is grown on the surface of the substrate by supporting a substrate support at the peripheral edge thereof, and then supplying gas into the reaction vessel while heating the substrate holder to a predetermined temperature by the heating means. A vapor phase growth method. 43. A curvature of warp that occurs when the substrate is heated to a predetermined temperature by a heating means in order to support the substrate at its periphery, which is placed in a reaction vessel and on which a thin film is to be grown on the surface. The substrate holder is supported by a substrate holder having a counterbore portion having a radius of curvature approximately equal to
A vapor phase growth method characterized in that a thin film is grown on the surface of the substrate by supplying a gas into the reaction vessel. 44. Supporting the substrate with a substrate holder arranged in a reaction vessel and having a counterbore formed therein to support the substrate at its peripheral edge, and then supporting the substrate on the surface of the substrate. Supplying gas into the reaction vessel while heating the holder to a predetermined temperature by a heating means and supplying a gas having a lower thermal conductivity than the raw material gas and the carrier gas to the counterbore portion surrounded by the substrate holder and the substrate. A vapor phase growth method characterized by growing a thin film on the surface of the substrate. 45. A substrate placed in a reaction vessel on which a thin film is to be grown on the surface thereof is supported by a substrate support at its periphery, and the substrate support is attached to a substrate holder which is heated to a predetermined temperature by a heating means. A vapor phase growth method characterized in that after the substrate holder is supported in a non-contact manner by the heating means, a gas is supplied into the reaction vessel while the substrate holder is heated to a predetermined temperature to grow a thin film on the surface of the substrate. . 46. A substrate holder heated to a predetermined temperature by a heating means, which is arranged in a reaction vessel and has a radiation rate approximately equal to the radiation rate of the substrate for supporting the substrate at its peripheral portion on which a thin film is to be grown on the surface. Supporting a substrate support made of a member having an emissivity, and then supplying gas into the reaction vessel while heating the substrate holder to a predetermined temperature by the heating means to grow a thin film on the surface of the substrate. A vapor phase growth method characterized by: 47. A substrate holder which is heated to a predetermined temperature by a heating means, and which is arranged in a reaction vessel and has a heat capacity per unit area of the substrate for supporting the substrate at its peripheral portion on which a thin film is to be grown on the surface. , and then, while heating the substrate holder to a predetermined temperature by the heating means, gas is supplied into the reaction vessel to increase the surface of the substrate. A vapor phase growth method characterized by growing a thin film. 48. A substrate support means having a substrate support portion for supporting a peripheral edge of the substrate, a heating means for heating the substrate support means, and a gas for growing a thin film on the substrate. A vapor layer growth apparatus comprising: a gas supply means; and a correction means for correcting a temperature drop in a peripheral portion when the substrate is heated. 49. The correction means is configured such that the distance between the substrate support body of the substrate support means and the substrate support section is smaller than the distance between the substrate support body of the substrate support means and the substrate. 49. The vapor phase growth apparatus according to claim 48, comprising a protrusion means formed thereon. 50. The correction means includes temperature control means for making the temperature of the substrate support near the peripheral edge of the substrate higher than the temperature of other parts. 50. The vapor phase growth apparatus according to item 49. 51. The gas phase according to claim 50, wherein the correction means corrects the temperature of the substrate support near the peripheral edge of the substrate to be 10° C. to 200° C. higher than the temperature of the substrate. growth equipment. 52. The projection means has a distance (Hl) between the substrate support body of the substrate support means and the substrate support part, and a distance (Hl) between the substrate support body of the substrate support means and the substrate.
50. The vapor phase growth apparatus according to claim 49, wherein the height is set so that the ratio H (H2/H1) with respect to the height of the second embodiment of the present invention is 2 to 20. 53. The correction means includes temperature control means capable of independently controlling the temperature of the substrate support near the peripheral edge of the substrate and the temperature of the substrate. 48. The vapor phase growth apparatus according to 48. 54. A substrate support means having a substrate support portion for supporting a peripheral edge of the substrate, a heating means for heating the substrate support means, and a gas for growing a thin film on the substrate. Gas supply means, and the said substrate support part is divided|segmented into plurality along the circumferential direction of the said board|substrate, The vapor phase growth apparatus characterized by the above-mentioned. 55. A substrate support means having a substrate support portion for supporting a peripheral edge of the substrate, a heating means for heating the substrate support means, and supplying a gas for growing a thin film on the substrate. A vapor phase growth apparatus comprising: a gas supply means, wherein the substrate support means is formed with a rib for preventing warping of the substrate support means.