JPH0420994B2 - - Google Patents
Info
- Publication number
- JPH0420994B2 JPH0420994B2 JP20256083A JP20256083A JPH0420994B2 JP H0420994 B2 JPH0420994 B2 JP H0420994B2 JP 20256083 A JP20256083 A JP 20256083A JP 20256083 A JP20256083 A JP 20256083A JP H0420994 B2 JPH0420994 B2 JP H0420994B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- shadow mask
- resist film
- metal plate
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 72
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 239000011148 porous material Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 229940071162 caseinate Drugs 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000008267 milk Substances 0.000 description 2
- 210000004080 milk Anatomy 0.000 description 2
- 235000013336 milk Nutrition 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 238000011176 pooling Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000011301 petroleum pitch Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はカラー受像管に用いられるシヤドウマ
スクの製造方法に係わり、特にそのエツチング方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method of manufacturing a shadow mask used in a color picture tube, and particularly to an etching method thereof.
カラー受像管に用いられるシヤドウマスクは異
なる発光色の群からなる螢光面に近接対向して配
置され、規則正しく配列された多数の開孔を介し
て色選別機能を果たす重要な部材である。このシ
ヤドウマスクは通常、帯状の金属薄板からエツチ
ングにより多数の開孔が穿設されるが、その開孔
形状、特に断面形状は板厚方向に貫通している開
孔径に対して螢光面側の表面の開孔領域は大きく
(以降大孔と称す)、電子銃側の表面の開孔領域は
貫通開孔径と同程度で螢光面側のそれよりは小さ
い(以降小孔と称す)。
A shadow mask used in a color picture tube is an important member that is placed close to and facing a fluorescent surface consisting of a group of different emitted colors, and performs a color selection function through a large number of regularly arranged apertures. This shadow mask is usually made by etching a large number of holes from a strip-shaped thin metal plate. The opening area on the surface is large (hereinafter referred to as a large hole), and the opening area on the electron gun side is approximately the same as the through-hole diameter and smaller than that on the fluorescent surface side (hereinafter referred to as a small hole).
このような複雑な断面形状を有する開孔をエツ
チングにより穿設する場合、その開孔径が小さく
なる程その精度と再現性は低下し、板厚より小さ
い開孔径を得ることは困難である。このような板
厚より小さい開孔径を得る方法として、特公昭57
−26345号公報では第1図及び第2図に示すよう
な提案がなされている。即ち、金属板1のエツチ
ングすべき大小孔部に相当する金属面が露出し、
他は耐エツチング性を有するレジスト膜2a及び
2bで覆われた金属板1の大孔Daを形成する金
属面を下にし、aのゾーンにて金属板1の両面よ
り目的とする深さ、つまり金属板残部厚Hまで前
段のエツチングを行なつた後、bのゾーンで水洗
しcのゾーンで乾燥する。次いで小孔Dbを形成
した金属板面にアスフアルト、パラフイン又は重
合プラスチツク等のエツチング液に対して抵抗性
を有する材料をdのゾーンにてスプレーし、eの
ゾーンにて乾燥することによつて抵抗層3を形成
する。その後大孔Da側のみからfのゾーンにて
後段のエツチングを行ない、小孔Dbを埋めてい
る抵抗層3に到達し目的とする孔寸法になるまで
エツチングを続ける。エツチング終了後、水洗、
抵抗層及びレジスト膜剥離等の次工程(g)へ送る。
このような方法により金属板の板厚の40%程度の
孔寸法を有するシヤドウマスクが得られるとして
いる。 When apertures having such a complicated cross-sectional shape are formed by etching, the accuracy and reproducibility decrease as the aperture diameter becomes smaller, and it is difficult to obtain an aperture diameter smaller than the thickness of the plate. As a method of obtaining such an opening diameter smaller than the plate thickness,
In the publication No. 26345, a proposal as shown in FIGS. 1 and 2 is made. That is, the metal surface corresponding to the large and small holes to be etched in the metal plate 1 is exposed,
The metal plate 1 is covered with etching-resistant resist films 2a and 2b, with the metal surface forming the large hole D a facing down, and the desired depth is etched from both sides of the metal plate 1 in zone a. That is, after performing the first stage etching to the remaining thickness H of the metal plate, it is washed with water in zone b and dried in zone c. Next, a material that is resistant to etching liquid, such as asphalt, paraffin, or polymeric plastic, is sprayed on the metal plate surface in which the small holes D b have been formed in zone d, and dried in zone e. A resistive layer 3 is formed. Thereafter, a second stage of etching is performed only from the large hole D a side in zone f, and etching is continued until the resistive layer 3 filling the small hole D b is reached and the desired hole size is reached. After etching, wash with water,
Send to the next step (g) such as stripping the resistive layer and resist film.
It is said that a shadow mask having a hole size of about 40% of the thickness of the metal plate can be obtained by such a method.
しかし乍ら孔形成部以外を覆つているレジスト
層2a及び2bは一般に通常の露光、現像、乾燥
及びバーニング後小孔部を上側、大孔部を下側と
し両面よりエツチングを施こし、更に水洗乾燥を
行なつた場合、耐エツチング性が低下し且つレジ
スト形状が歪む。従つて後段の大孔側からのエツ
チング時はレジスト層2aと金属板1との付着力
が低下しているためサイドエツチング量が大きく
なり孔寸法のばらつきを生じ易くなり、サイドエ
ツチングによつて生じたレジスト膜部の形状歪に
より孔形状の乱れが発生しシヤドウマスクの品位
を低下させる。 However, the resist layers 2a and 2b, which cover areas other than the pore forming areas, are generally etched from both sides with the small pores on the top and the large pores on the bottom after normal exposure, development, drying and burning, and then washed with water. If drying is carried out, the etching resistance will decrease and the resist shape will be distorted. Therefore, when etching is performed from the large hole side in the latter stage, the adhesion between the resist layer 2a and the metal plate 1 is reduced, so the amount of side etching increases, and variations in hole size are likely to occur. Due to the shape distortion of the resist film portion, the pore shape is disturbed and the quality of the shadow mask is degraded.
また前段のエツチング終了後、小孔部に抵抗材
を充填するが、この充填の際最も困難な点は第3
図に示すように小孔部のレジスト層2bは前段の
エツチング時のサイドエツチングにより一部ひさ
し2cの状態で存在し、このひさし部2cが抵抗
材の凹部内への流れ込みに際し大きな障害とな
る。すなわち、抵抗材を浸漬法或はスプレー法に
て凹部内に充填する場合、このひさし部2cの近
傍における空気が抜けきらず一部気泡の状態で残
り易い。この結果後段のエツチング時に気泡の存
在する部分は完全に充填されている部分と比較し
エツチングの進行が早いため孔形状に欠陥を生じ
易い問題を有している。 In addition, after the first step of etching is completed, the small holes are filled with a resistive material, but the most difficult point during this filling is the third step.
As shown in the figure, the resist layer 2b in the small hole portion partially exists in the form of an eaves 2c due to side etching during the previous etching process, and this eave portion 2c becomes a major obstacle to the flow of the resistive material into the recess. That is, when the resistive material is filled into the recess by dipping or spraying, the air in the vicinity of the eaves 2c is not completely removed and tends to remain partially in the form of bubbles. As a result, during the subsequent etching process, the etching progresses faster in areas where air bubbles exist than in areas that are completely filled, resulting in the problem that defects are more likely to occur in the hole shape.
さらに前段のエツチング時孔寸法を決定する小
孔部を上側にしてエツチングを行なう場合、金属
板上に溜まるエツチング液の分布は均一とはなら
ず、全ての小孔部で同じ凹部寸法を得るべくエツ
チングが進行するのを妨害する。この結果孔寸法
にばらつきを生ずる問題を有している。 Furthermore, when etching is performed with the small hole part, which determines the hole size, on the upper side, the distribution of the etching solution that accumulates on the metal plate is not uniform, and it is difficult to obtain the same recess size in all the small hole parts. Interfering with the progress of etching. As a result, there is a problem in that the hole dimensions vary.
本発明は以上の点に鑑みてなされたもので、シ
ヤドウマスクの金属板の板厚より小さな寸法の開
孔をシヤドウマスク全面に均一に形成することを
目的とする。
The present invention has been made in view of the above points, and it is an object of the present invention to uniformly form openings having dimensions smaller than the thickness of the metal plate of the shadow mask over the entire surface of the shadow mask.
本発明は、まず金属薄板の両側の面より前段の
エツチングを行なつて所定の凹部を形成し、エツ
チング面を水洗しレジスト膜を剥離し水洗乾燥し
た後金属板を反転させて上側となつた凹部にのみ
エツチング抵抗層を形成し、以上の前段のエツチ
ング終了から抵抗層形成までの工程で大孔側の面
を水洗、レジスト膜剥離液及び抵抗層材が付着し
ないように保護し、抵抗層の形成されていない面
を下側として保護手段除去後段のエツチングを行
なつて所定の凹部を形成し、後段のエツチングに
より所定の形状に透孔を貫通穿設せしめて後水洗
し抵抗層及びレジスト膜を剥離し水洗乾燥し常に
下側からのみエツチングを行ないエツチング液の
溜りを防止することによつて、金属薄板の板厚よ
り小さな寸法の透孔を有するシヤドウマスクを得
るものである。
In the present invention, first, pre-etching is performed on both sides of a thin metal plate to form predetermined recesses, and the etched surfaces are washed with water, the resist film is peeled off, washed with water and dried, and then the metal plate is turned over to form the upper side. An etching resistance layer is formed only in the recesses, and in the process from the end of the previous etching to the formation of the resistance layer, the surface on the large hole side is washed with water to protect it from adhesion of the resist film stripping solution and the resistance layer material, and the resistance layer is removed. After the protective means is removed, a predetermined recess is formed by etching with the side where the protection means is not formed facing downward, and a through hole is formed in a predetermined shape by the subsequent etching, and then washed with water to remove the resistive layer and the resist. A shadow mask having through-holes smaller than the thickness of the thin metal plate is obtained by peeling off the film, washing with water, drying, and always etching only from the bottom to prevent the etching solution from pooling.
以下本発明の実施例について詳細に説明する。 Examples of the present invention will be described in detail below.
実施例 1
第4図は本発明の実施例による工程ごとの金属
板の構成図、第5図は同じく各工程を示す模式図
である。Embodiment 1 FIG. 4 is a block diagram of a metal plate for each step according to an embodiment of the present invention, and FIG. 5 is a schematic diagram showing each step.
シヤドウマスク材として板厚0.13mmの平滑なア
ルミキルド低炭素鋼板4を用い、両主面に牛乳カ
ゼイン酸アルカリと重クロム酸アンモニウムから
なる感光液を塗布乾燥して約5μmのレジスト膜
を形成する。次いで金属薄板4の一方の主面に約
80μmの円形像を有するネガ原版を、他方の主面
の対応部位に約150μmの円形像を有するネガ原
版をそれぞれ密着配置し、5KWの水銀ランプを
使用し1mの距離から30秒間露光する。その後40
℃の温水で1Kg/cm2のスプレー圧にて未露光未硬
化部のレジスト膜部を溶解除去し、小孔形成部及
び大孔形成部にあたる金属面7,8を露出させる
(第4図a)。この後残存レジスト膜5,6の耐エ
ツチング性及び金属薄版4との付着強度を向上さ
せるため150℃の雰囲気で約2分間乾燥し、200℃
の雰囲気で約2分間バーニングを施こす。次いで
金属板の両側からエツチング液9を吹きつけ目的
とする凹部10が形成されるまでエツチングを行
つた後(第4図b、第5図a)水洗し(第5図
b)、乾燥する(図示せず)。ここで前段のエツチ
ング終了時に金属板4の大孔側にポリエチレン、
ポリプロピレン又は塩化ビニール等の保護フイル
ム11をはりつけ(第4図c)、後段のエツチン
グまでの大孔側の凹部を保護する。次いで小孔側
から濃度15%、60℃の水酸化ナトリウム液をスプ
レーし小孔側の残存レジスト膜をはがし(第5図
c)、水洗(第5図d)乾燥する。次いで金属板
を反転させて(第4図c)前段のエツチングで形
成された小孔側面を上側とし、この面にローラー
コータにて水溶性のエツチング抵抗材、例えば牛
乳カゼイン酸アルカリ、ポリビニールアルコー
ル、エポキシ系デイスパージヨン樹脂、又はアル
キド樹脂等を塗布して(第5図e)、小孔側の凹
部を完全に埋め乾燥(第5図f)することにより
抵抗層12を形成する(第4図d)。この抵抗材
の塗布法としてはローラーコート法以外にスプレ
ー法、浸漬法又はバーコーター法によつて行なつ
ても良い。また抵抗材としては耐エツチング性を
有することが必要で、上記以外に非水溶性のも
の、例えばパラフイン、石油ピツチ、ラツカー等
を用いる場合は小孔側の残存レジスト膜5の剥離
水洗後乾燥して抵抗層12を形成するとよい。 A smooth aluminum-killed low-carbon steel plate 4 with a thickness of 0.13 mm is used as a shadow mask material, and a photosensitive solution consisting of alkali milk caseinate and ammonium dichromate is applied to both main surfaces and dried to form a resist film of approximately 5 μm. Next, on one main surface of the thin metal plate 4, approximately
A negative master plate with a circular image of 80 μm and a negative master plate with a circular image of approximately 150 μm are placed in close contact with each other on the corresponding part of the other main surface, and exposed for 30 seconds from a distance of 1 m using a 5KW mercury lamp. . then 40
The unexposed and uncured portions of the resist film are dissolved and removed using hot water at a temperature of 1 kg/cm 2 at a spray pressure of 1 kg/cm 2 to expose the metal surfaces 7 and 8 corresponding to the small hole forming portion and the large hole forming portion (Fig. 4 a). ). Thereafter, in order to improve the etching resistance of the remaining resist films 5 and 6 and the adhesion strength with the thin metal plate 4, the remaining resist films 5 and 6 were dried for about 2 minutes in an atmosphere of 150°C and then heated to 200°C.
Burn for about 2 minutes in an atmosphere of Next, etching is carried out by spraying etching liquid 9 from both sides of the metal plate until the desired recesses 10 are formed (FIGS. 4b and 5a), followed by washing with water (FIG. 5b) and drying (FIG. 5b). (not shown). Here, when the previous stage etching is completed, polyethylene is placed on the large hole side of the metal plate 4.
A protective film 11 made of polypropylene or vinyl chloride is attached (FIG. 4c) to protect the recess on the large hole side up to the subsequent etching. Next, a sodium hydroxide solution with a concentration of 15% and a temperature of 60° C. is sprayed from the small hole side to peel off the remaining resist film on the small hole side (Fig. 5c), and the resist film is washed with water (Fig. 5d) and dried. Next, the metal plate is turned over (Fig. 4c) so that the side surface of the small hole formed by the previous etching is placed on top, and a water-soluble etching-resistant material such as milk caseinate alkali or polyvinyl alcohol is applied to this side using a roller coater. , epoxy dispersion resin, alkyd resin, etc. are applied (Fig. 5 e), and the recesses on the small hole side are completely filled and dried (Fig. 5 f), thereby forming the resistance layer 12 (Fig. 5 f). Figure 4 d). In addition to the roller coating method, the resistive material may be applied by a spray method, a dipping method, or a bar coater method. In addition, the resistive material must have etching resistance, and if water-insoluble materials such as paraffin, petroleum pitch, lacquer, etc. are used in addition to the above, the remaining resist film 5 on the small hole side must be peeled off, washed with water, and then dried. It is preferable to form the resistance layer 12 by using the following steps.
さて抵抗層12を形成した後大孔側の保護フイ
ルム11をはがし、金属板の下側に位置する大孔
側のみにエツチング液9を吹きつけてエツチング
を行なう(第5図g)ことにより、抵抗層12に
大孔側凹部が到達して目的とする寸法のシヤドウ
マスク開孔を得る(第4図e)。次いで抵抗層1
2及びレジスト膜6をはがして(第5図h)開孔
形成工程が終了する(第4図f)。 Now, after forming the resistance layer 12, the protective film 11 on the large hole side is peeled off, and etching is performed by spraying the etching liquid 9 only on the large hole side located below the metal plate (Fig. 5g). The large hole side concave portion reaches the resistance layer 12 to obtain a shadow mask opening of the desired size (FIG. 4e). Then resistive layer 1
2 and the resist film 6 are removed (FIG. 5h), and the opening forming process is completed (FIG. 4f).
このようにして得られたシヤドウマスクは孔形
状が優れ、欠陥もなく且つ金属板板圧よりも小さ
くばらつきのない孔寸法を有する高品位なもので
ある。以上の実施例において、抵抗材の塗布方法
によつて金属板の下側に抵抗材が付着しない場
合、保護フイルムの剥離は抵抗材塗布工程の前で
行なつてもよい。 The thus obtained shadow mask is of high quality, with excellent hole shape, no defects, and hole size smaller than the metal plate thickness and without variation. In the above embodiments, if the resistive material does not adhere to the lower side of the metal plate due to the resistive material coating method, the protective film may be peeled off before the resistive material coating step.
実施例 2
第6図及び第7図に本発明の第2の実施例のチ
ヤンバー及び工程図を示す。この実施例の場合も
レジスト膜塗布から前段のエツチング工程までは
実施例1と同様である。第7図のa乃至hの各工
程は第5図の各工程と同様で夫々対応している。
前段のエツチング終了から後段のエツチングまで
の間に大孔側にレジスト膜剥離液や抵抗材その他
が付着するのを防止するために第6図a及びbに
示すように金属板4の走行部に相当するチヤンバ
ー側面に遮蔽板14を有するエツチングチヤンバ
ー13内で後段のエツチング工程までを実施す
る。この遮蔽板の構造としては種々考えられる
が、第6図はその一例を示すもので、下側からの
エツチング液の吹き上げる力によつて金属板が遮
蔽板から浮き上らないようゴムローラ15で押え
つける構造を有している。即ち、エツチング終了
後上記遮蔽板を有する水洗チヤンバーにて小孔側
に付着しているエツチング液を洗い流し(第7図
b)、次いで同様の遮蔽板を有するレジスト膜剥
離チヤンバーにて小孔側のレジスト膜を実施例1
と同様に水酸化ナトリウム液で除去(第7図c)
した後、水洗し(第7図d)、乾燥する(図示せ
ず)。その後金属板を反転させ凹部の形成された
小孔部を上側とし、同様な遮蔽板を有する抵抗材
塗布チヤンバーにて実施例1と同様、エツチング
抵抗材を金属板の上側に位置する小孔側にのみ塗
布し(第7図e)、乾燥する(第7図f)ことに
よつて抵抗層を形成する。次いで遮蔽板を有さな
いエツチングチヤンバー内で大孔側にのみ下側か
らエツチング液を吹きつけてエツチングを行なう
(第7図g)ことにより抵抗層に大孔側凹部が到
達して目的とする寸法のシヤドウマスク開孔を得
る。次いで抵抗層及びレジスト膜をはがして開孔
形成工程が終了する(第7図h)。Embodiment 2 FIGS. 6 and 7 show a chamber and a process diagram of a second embodiment of the present invention. In this example, the steps from resist film application to the preceding etching process are the same as in Example 1. The steps a to h in FIG. 7 are similar to and correspond to the steps in FIG. 5, respectively.
In order to prevent resist film stripping liquid, resistive material, etc. from adhering to the large hole side between the end of the first stage etching and the second stage etching, as shown in FIGS. 6a and 6b, the running part of the metal plate 4 is The subsequent etching steps are carried out in an etching chamber 13 having a shielding plate 14 on the side surface of the corresponding chamber. There are various possible structures for this shielding plate, and FIG. 6 shows one example, in which the metal plate is held down by a rubber roller 15 so that it does not lift up from the shielding plate due to the force of the etching liquid blowing up from below. It has a structure that attaches. That is, after etching is completed, the etching solution adhering to the small hole side is washed away using a washing chamber having the above-mentioned shielding plate (Fig. 7b), and then the resist film stripping chamber having the same shielding plate is used to wash away the etching liquid adhering to the small hole side. Example 1 of resist film
Remove with sodium hydroxide solution in the same way as (Figure 7c)
After that, it is washed with water (FIG. 7d) and dried (not shown). Thereafter, the metal plate was turned over, and the etching resistance material was applied to the small hole side located on the upper side of the metal plate in the same manner as in Example 1 using a resistance material coating chamber having a similar shielding plate, with the small hole portion where the recess was formed facing upward. A resistive layer is formed by applying the resistive layer (FIG. 7e) and drying it (FIG. 7f). Next, in an etching chamber that does not have a shielding plate, etching is carried out by spraying the etching solution only on the large hole side from below (Fig. 7g), so that the large hole side recess reaches the resistive layer and the intended purpose is achieved. Obtain a shadow mask aperture with dimensions as follows. Next, the resistive layer and resist film are peeled off to complete the opening forming process (FIG. 7h).
この実施例では小孔側に抵抗層を形成したが、
大孔側に形成してもよいことは言うまでもない。 In this example, a resistance layer was formed on the small hole side.
Needless to say, it may be formed on the large hole side.
また抵抗材の塗布方法によつて金属板の下側に
抵抗材が付着しない場合、抵抗材塗布チヤンバー
は遮蔽板を有していなくてもよい。 Further, if the resistive material is not attached to the lower side of the metal plate depending on the method of applying the resistive material, the resistive material coating chamber does not need to have a shielding plate.
実施例 3
第8図に本発明の第3の実施例の工程図を示す
が、この実施例の場合もレジスト膜塗布から前段
のエツチング工程までは実施例1と同様であり説
明は省略する。また第7図のa乃至hの各工程は
第5図の各工程と同様で夫々対応している。前段
のエツチング終了から後段のエツチングまでの間
に大孔側にレジスト膜剥離液や抵抗材その他が付
着するのを防止するため保護フイルム11として
マグネテイツクシートをはりつけレジスト剥離工
程(第8図c)から抵抗材塗布工程(第7図d)
までを実施する。このマグネテイツクシートは着
磁体をゴムシート又は柔軟性を有するプラスチツ
クシートの表面に塗布したもの、或は着磁体をそ
れらの中に含浸させたものがよく、且つ輪環状で
連続使用が可能である。従つてエツチング終了後
(第8図a)水洗チヤンバーにて小孔側に付着し
ているエツチング液を洗い流し(第8図b)、乾
燥(図示せず)後マグネテイツクシートを大孔側
にはりつけ、次のレジスト剥離チヤンバーにて小
孔側のレジスト膜のみを実施例1と同様に水酸化
ナトリウム液で除去した(第8図c)後、水洗
(第8図d)し乾燥する。その後金属板を反転さ
せ凹部の形成された小孔部を上側とし、大孔側に
マグネツテイツクシートをはりつけたまま実施例
1と同様に小孔側のみに抵抗層を形成(第8図
e)し乾燥する(第8図f)。この時マグネテイ
ツクシートは抵抗材塗布工程(第8図e)後大孔
側より剥され第8図cのレジスト膜剥離工程前へ
循環して戻る。以降の工程は実施例1と同様であ
る。Embodiment 3 FIG. 8 shows a process diagram of a third embodiment of the present invention, but in this embodiment as well, the steps from resist film coating to the preceding etching step are the same as in Embodiment 1, and the explanation thereof will be omitted. Further, the steps a to h in FIG. 7 are similar to and correspond to the steps in FIG. 5, respectively. In order to prevent resist film stripping solution, resistive material, etc. from adhering to the large hole side between the end of the first stage etching and the second stage etching, a magnetic sheet is pasted as a protective film 11 and the resist stripping process (Fig. 8c) is performed. ) to resistive material coating process (Fig. 7d)
Implement up to. This magnetic sheet is preferably one in which a magnetized material is applied to the surface of a rubber sheet or a flexible plastic sheet, or one in which the magnetized material is impregnated, and it is annular and can be used continuously. be. Therefore, after etching is completed (Fig. 8a), the etching solution adhering to the small hole side is washed away using a washing chamber (Fig. 8b), and after drying (not shown), the magnetic sheet is placed on the large hole side. After gluing, in the next resist stripping chamber, only the resist film on the small hole side was removed with a sodium hydroxide solution in the same manner as in Example 1 (FIG. 8c), followed by washing with water (FIG. 8d) and drying. Thereafter, the metal plate was turned over so that the small hole with the recess was placed on the upper side, and a resistive layer was formed only on the small hole side in the same manner as in Example 1 while leaving the magnetic sheet attached to the large hole side (Fig. 8e). ) and dry (Figure 8f). At this time, the magnetic sheet is peeled off from the large hole side after the resistive material application step (FIG. 8e) and circulated back to before the resist film stripping step of FIG. 8c. The subsequent steps are the same as in Example 1.
スプレーエツチングの場合、大孔及び小孔共下
側からエツチング液を吹きつけて液溜りの影響を
回避することが好ましい。しかし乍ら前段及び後
段のエツチング共下側から行なう場合、エツチン
グに要する時間が長くなり、生産効率が低下し量
産性にも欠けるが、本発明のように前段のエツチ
ング時に孔寸法に余り影響を与えない大孔側を上
側とし、大孔小孔側両面より同時エツチングを行
ない、後段では下側からのみエツチングを行なう
ことにより、孔形状にすぐれ、孔欠陥がなく且つ
金属薄板板厚よりも小さなばらつきのない孔寸法
を有する高品位のシヤドウマスクを得ることがで
きる。
In the case of spray etching, it is preferable to spray the etching solution from below both the large hole and the small hole to avoid the influence of liquid pooling. However, if both the first and second stages are etched from below, the time required for etching will be longer, production efficiency will be lowered, and mass productivity will be lacking. By etching simultaneously from both sides of the large hole and small hole side, with the large hole side that is not etched as the upper side, and etching only from the bottom side in the latter stage, the hole shape is excellent, there are no hole defects, and the thickness is smaller than the thickness of the metal thin plate. A high-quality shadow mask having uniform hole sizes can be obtained.
第1図は従来の開孔形成工程を示す概略工程
図、第2図は第1図の工程途中での開孔断面状態
を示す概略図、第3図は開孔のサイドエツチング
を説明するための概略図、第4図a乃至第4図f
は本発明の実施例の開孔形成過程での開孔形状を
示す概略断面図、第5図は第4図の開孔形成工程
を示す概略工程図、第6図a及び第6図bは遮蔽
板の一例を示す概略断面図及び斜視図、第7図及
び第8図は本発明の他の実施例の開孔形成工程を
示す概略工程図である。
4……金属板、5,6……レジスト膜、7,8
……露出金属面、9……エツチング液、10……
凹部、11……保護フイルム、12……抵抗層、
13……チヤンバー、14……遮蔽板。
Figure 1 is a schematic process diagram showing the conventional hole forming process, Figure 2 is a schematic diagram showing the cross-sectional state of the hole in the middle of the process in Figure 1, and Figure 3 is for explaining side etching of the hole. Schematic diagram of Figures 4a to 4f
is a schematic cross-sectional view showing the shape of the hole in the hole formation process of the embodiment of the present invention, FIG. 5 is a schematic process diagram showing the hole formation step of FIG. 4, and FIGS. 6a and 6b are A schematic cross-sectional view and a perspective view showing an example of a shielding plate, and FIGS. 7 and 8 are schematic process diagrams showing a hole forming step in another embodiment of the present invention. 4... Metal plate, 5, 6... Resist film, 7, 8
...Exposed metal surface, 9...Etching liquid, 10...
recess, 11...protective film, 12...resistance layer,
13...chamber, 14...shielding plate.
Claims (1)
他方の表面の開孔領域とは異なる多数の規則的に
配列された透孔を穿設するシヤドウマスクの製造
方法において、前記金属薄板の両面の所定の前記
開孔領域とすべき部分以外の部分を耐エツチング
レジスト膜で被覆し、前記小さい方の開孔領域を
下側とし前記金属薄板の両側の面より前段のエツ
チングを行なつて所定の凹部を形成し、前記凹部
が形成された面を水洗し前記小さい方の開孔領域
側の前記レジスト膜のみを除去し水洗乾燥し、前
記金属板を反転させて上側の金属面にのみエツチ
ング抵抗層を形成し、以上の前段のエツチング終
了後から前記抵抗層形成までの工程で小さい方の
開孔領域とは異なる面は水洗、レジスト膜剥離液
及び抵抗層材が付着しないように保護し、前記抵
抗層の形成されていない面のみを下側として後段
のエツチングを行なつて所定の凹部を形成し、前
記後段のエツチングにより所定の形状に透孔を貫
通穿設せしめて後水洗し前記抵抗層及びレジスト
膜を剥離し水洗乾燥して、前記金属薄板の板厚よ
り小さな寸法の透孔を有するシヤドウマスクを得
ることを特徴とするシヤドウマスクの製造方法。 2 前記前段のエツチング時の終了時以降の小さ
い方の開孔領域とは異なる面の保護を有機合成フ
イルムで行なうことを特徴とする特許請求の範囲
第1項記載のシヤドウマスクの製造方法。 3 前記前段のエツチング終了時以降の小さい方
の開孔とは異なる面の保護を輪環状で循環使用が
可能なマグネテイツクシートで行なうことを特徴
とする特許請求の範囲第1項記載のシヤドウマス
クの製造方法。 4 前記前段のエツチング終了時以降の小さい方
の開孔とは異なる面の保護を液状物飛散付着防止
用の遮蔽板を有するエツチングチヤンバーで行な
うことを特徴とする特許請求の範囲第1項記載の
シヤドウマスクの製造方法。[Scope of Claims] 1. A method for manufacturing a shadow mask in which a large number of regularly arranged through holes are formed in which the aperture area on one surface of a thin metal plate is different from the corresponding aperture area on the other surface, A portion of both sides of the thin metal plate other than the predetermined aperture area is covered with an etching-resistant resist film, and the smaller aperture area is placed on the lower side, and the etching is performed at a stage earlier than the both sides of the metal thin plate. to form a predetermined recess, wash the surface on which the recess is formed, remove only the resist film on the side of the smaller opening area, wash with water and dry, then turn the metal plate over and remove the resist film on the side of the smaller opening area. An etching resistance layer is formed only on the metal surface, and in the process from the end of the previous etching to the formation of the resistance layer, the surface different from the smaller opening area is washed with water, and the resist film stripping solution and resistance layer material are attached. A predetermined recess is formed by etching in the subsequent step with only the surface on which the resistive layer is not formed facing downward, and a through hole in a predetermined shape is bored through the etching in the subsequent step. A method for manufacturing a shadow mask, which comprises washing with water, peeling off the resistive layer and resist film, washing with water and drying to obtain a shadow mask having through holes smaller than the thickness of the thin metal plate. 2. The method of manufacturing a shadow mask according to claim 1, wherein a surface different from the smaller aperture region after the end of the previous etching step is protected with an organic synthetic film. 3. The shadow mask according to claim 1, characterized in that a surface different from the smaller opening after the end of the previous stage etching is protected by a ring-shaped magnetic sheet that can be used cyclically. manufacturing method. 4. Protection of a surface different from the smaller opening after the end of the previous etching is performed by an etching chamber having a shielding plate for preventing adhesion of liquid from scattering. How to make a shadow mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20256083A JPS6096774A (en) | 1983-10-31 | 1983-10-31 | Preparation of shadow mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20256083A JPS6096774A (en) | 1983-10-31 | 1983-10-31 | Preparation of shadow mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6096774A JPS6096774A (en) | 1985-05-30 |
| JPH0420994B2 true JPH0420994B2 (en) | 1992-04-07 |
Family
ID=16459514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20256083A Granted JPS6096774A (en) | 1983-10-31 | 1983-10-31 | Preparation of shadow mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6096774A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6796281B2 (en) * | 2016-09-30 | 2020-12-09 | 大日本印刷株式会社 | A method for manufacturing a vapor deposition mask and a method for manufacturing a metal plate used for manufacturing a vapor deposition mask. |
-
1983
- 1983-10-31 JP JP20256083A patent/JPS6096774A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6096774A (en) | 1985-05-30 |
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