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JPH0414494B2 - - Google Patents

Info

Publication number
JPH0414494B2
JPH0414494B2 JP58248427A JP24842783A JPH0414494B2 JP H0414494 B2 JPH0414494 B2 JP H0414494B2 JP 58248427 A JP58248427 A JP 58248427A JP 24842783 A JP24842783 A JP 24842783A JP H0414494 B2 JPH0414494 B2 JP H0414494B2
Authority
JP
Japan
Prior art keywords
wafer
processed
brushes
rotating
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58248427A
Other languages
Japanese (ja)
Other versions
JPS60143634A (en
Inventor
Nobuo Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58248427A priority Critical patent/JPS60143634A/en
Publication of JPS60143634A publication Critical patent/JPS60143634A/en
Publication of JPH0414494B2 publication Critical patent/JPH0414494B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/28Work carriers for double side lapping of plane surfaces
    • H10P52/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

【発明の詳細な説明】 (a) 発明の技術分野 本発明はウエーハ処理装置に係り、特に半導体
ウエーハの両面スクラブ洗浄、両面注水洗浄(ジ
エツト洗浄)及びスピン乾燥を連続して行うこと
が可能なウエーハ処理装置に関する。
[Detailed Description of the Invention] (a) Technical Field of the Invention The present invention relates to a wafer processing apparatus, and particularly to a wafer processing apparatus that is capable of continuously performing double-sided scrub cleaning, double-sided water injection cleaning (jet cleaning), and spin drying of semiconductor wafers. The present invention relates to wafer processing equipment.

(b) 技術の背景 半導体装置を製造する際のウエーハプロセスに
於ては、被処理ウエーハの搬送,保9中に於ける
汚染を除去し加工歩留まりを向上せしめるため
に、不純物導入,気相成長,金属膜形成等のウエ
ーハ加工工程の直前にスクラブ洗浄,注水洗浄,
スピン乾燥よりなる加工前処理が行われる。
(b) Background of technology In the wafer process when manufacturing semiconductor devices, impurity introduction and vapor phase growth are used to remove contamination during transport and storage of the wafer to be processed and improve processing yield. , scrub cleaning, water injection cleaning,
A preprocessing treatment consisting of spin drying is performed.

(c) 従来技術と問題点 従来上記前処理の工程は、専用のスクラブ洗浄
装置とジエツト洗浄及びスピン乾燥を行う装置及
びスクラブ洗浄装置からジエツト洗浄及びスピン
乾燥を行う装置へ被処理ウエーハを移すためのベ
ルト等よりなる搬送装置によつてラインが構成さ
れていた。
(c) Prior art and problems Conventionally, the pretreatment process described above involves a dedicated scrub cleaning device, a device for jet cleaning and spin drying, and a process for transferring the wafer to be processed from the scrub cleaning device to a device for jet cleaning and spin drying. The line consisted of a conveying device consisting of a belt, etc.

そして上記従来の前処理工程に於て、スクラブ
洗浄装置は、第1図に模式的に平面図イ及びA−
A矢視断面図ロを示したように被処理ウエーハW
に回転力m1を与える回動軸Smと、該回動軸Sm
にウエーハWの側面を圧接し、且つウエーハWを
位置決めし水平に支持する圧接コロCによつて被
処理ウエーハWを支持し回転させた状態で、該ウ
エーハWの中心に向つて押し出される一対の回転
ブラシBで該ウエーハWを挾み込んで該ウエーハ
Wの両面を同時にスクラブ洗浄する構造であつ
た。なお回動軸Sm及び圧接コロCのウエーハW
側面に接する部分はV字形の溝に形成されてい
る。
In the conventional pretreatment process described above, the scrub cleaning device is schematically shown in plan views A and A-A in FIG.
As shown in the cross-sectional view B shown in arrow A, the wafer W to be processed is
A rotation axis Sm that applies rotational force m 1 to
A pair of wafers W are pushed toward the center of the wafer W while the wafer W is supported and rotated by the pressure rollers C that position and horizontally support the wafer W. The wafer W was sandwiched between the rotating brushes B and both sides of the wafer W were scrubbed at the same time. In addition, the rotation axis Sm and the wafer W of the pressure welding roller C
The portion in contact with the side surface is formed into a V-shaped groove.

しかし該従来のスクラブ洗浄装置に於ては、回
動軸Sm及び圧接コロCに於けるウエーハWに接
する部分の洗浄が常時なされないことによるこれ
らの部分からの被処理ウエーハの汚染が避けられ
ないという問題があつた。
However, in the conventional scrub cleaning apparatus, since the parts of the rotation shaft Sm and the pressure rollers C that contact the wafer W are not constantly cleaned, contamination of the wafer to be processed from these parts is unavoidable. There was a problem.

又注水洗浄及びスピン乾燥を行う装置に於て
は、第2図に模式的に示したように、回転基板上
に植設された3本の位置決めピンP1,P2,P3
よつて被処理ウエーハWをクランプし、該ウエー
ハWを回転させながら注水洗浄及びスピン乾燥が
行われるが(m2は回転を示す矢印)、この場合被
処理ウエーハWの位置決めピンに接する部分の水
洗不充分及び乾燥遅延による汚洗が問題になつて
いた。
In addition, in the equipment that performs water injection cleaning and spin drying, three positioning pins P 1 , P 2 , and P 3 implanted on the rotating board are used as schematically shown in Fig. 2. The wafer W to be processed is clamped, and water injection cleaning and spin drying are performed while rotating the wafer W (m 2 is an arrow indicating rotation), but in this case, the portion of the wafer W to be processed that contacts the positioning pins may not be sufficiently washed with water. Also, dirty washing due to delayed drying became a problem.

そして更に従来の前処理工程に於ては、前述し
たようにスクラブ洗浄装置からジエツト洗浄スピ
ン乾燥装置へ被処理ウエーハを移す必要があり、
その際にベルト等の搬送装置によつて濡れたまま
の被処理ウエーハが移送されるので、この間にベ
ルト等からの異物の付着及び化学反応等によつ
て、被処理ウエーハ面にジエツト洗浄で除去しき
れない汚染物質が被着するという問題もあつた。
Furthermore, in the conventional pretreatment process, as mentioned above, it is necessary to transfer the wafer to be processed from the scrub cleaning equipment to the jet cleaning spin drying equipment.
At this time, the wet wafer to be processed is transported by a conveyor such as a belt, and during this time, foreign matter adhering to the belt, etc. and due to chemical reactions are removed from the surface of the wafer to be processed by jet cleaning. There was also the problem that more contaminants were deposited than could be removed.

又従来の構成に於ては、上記3種類の装置が使
用されるために、設備費用がかさみ、且つ占有面
積も拡大するという問題もあつた。
Furthermore, in the conventional configuration, since the three types of devices mentioned above are used, there are also problems in that the equipment cost increases and the occupied area also increases.

(d) 発明の目的 本発明は上記前処理工程内での被処理ウエーハ
の汚染をなくしてウエーパプロセスの歩留まりを
向上し、且つ設備費用の増大及び占有面積の拡大
を防止して該前処理工程のインライン化を容易な
らしめる目的でなされたものであり、この目的は
下記特徴を有する本発明のウエーハ処理装置によ
つて達成される。
(d) Purpose of the Invention The present invention improves the yield of the wafer process by eliminating contamination of the wafers to be processed during the pretreatment process, and prevents increase in equipment costs and expansion of the occupied area. This was done for the purpose of facilitating in-line processing, and this purpose is achieved by the wafer processing apparatus of the present invention having the following features.

(e) 発明の構成 即ち本発明は、回転方向が等しく、且つ被処理
ウエーハに及ぼす回転力の異なる一対の回転ブラ
シによつて被処理ウエハを挾み、更に流体噴出型
の保持機構で該被処理ウエーハを保持した状態で
該被処理ウエーハを該回転ブラシ間で自転せしめ
ながら該被処理ウエーハの両面を同時にスクラブ
することを特徴とするウエーハ処理方法、及び円
筒状を有し、被処理ウエーハに所定の回転力を与
える第1の回転ブラシと、円筒状を有し該第1の
回転ブラシとによつて被処理ウエーハを挾持し得
るように配設され、且つ被処理ウエーハに該第1
の回転ブラシと異なる回転力を与える第2の回転
ブラシと、該第1及び第2の回転ブラシを同一の
方向に回転せしめる駆動手段と、前記被処理ウエ
ーハを流体噴出によつて保持する手段とを有して
なることを特徴とする上記ウエーハ処理方法に用
いるウエーハ処理装置に関するものである。
(e) Structure of the Invention In other words, the present invention sandwiches a wafer to be processed between a pair of rotating brushes that rotate in the same direction and exert different rotational forces on the wafer to be processed, and further holds the wafer to be processed using a fluid jet type holding mechanism. A wafer processing method characterized by simultaneously scrubbing both sides of the wafer to be processed while rotating the wafer between the rotating brushes while holding the wafer to be processed; A first rotating brush that applies a predetermined rotational force and a cylindrical shape are arranged so that a wafer to be processed can be held therebetween, and
a second rotating brush that applies a rotational force different from that of the rotating brush; driving means for rotating the first and second rotating brushes in the same direction; and means for holding the wafer to be processed by jetting fluid; The present invention relates to a wafer processing apparatus used in the above-mentioned wafer processing method, characterized by comprising:

(f) 発明の実施例 以下本発明を実施例について、図を用いて説明
する。
(f) Embodiments of the invention The present invention will be described below with reference to the drawings.

第3図は本発明に係るウエーハ処理装置の一実
施例に於ける上面模式図イ及び透視側面模式図
ロ、第4図は同実施例に於ける中空支柱の機能説
明図で、第5図イ乃至チは同実施例の動作を示す
工程断面模式図である。
3 is a schematic top view A and a schematic perspective view B of an embodiment of a wafer processing apparatus according to the present invention, FIG. 4 is a functional explanatory diagram of a hollow support in the embodiment, and FIG. A to J are schematic process cross-sectional views showing the operation of the same embodiment.

本発明のウエーハ処理装置は例えば第3図イ及
びロに示すように形成される。同図に於て、Wは
被処理ウエーハ、1は容器(カツプ)、2は排水
口、3は中空部を有し真空排気、エアー、水の通
路としても機能する回転基板、4は同じく回転
軸、5は真空、エアー、水等の供給手段、6は回
転基板駆動用の可変速モータである。そして7
a,7b,7cは中空支柱で、該支柱が植設され
ている前記回転基板を介して真空、エアー、水等
が提供され真空チヤツク、エアーベアリング、ウ
オーターベアリングとして機能する。又8a,8
bは側面コロで、エアー若しくはウオーターベア
リングの効果により中空支柱から浮上した被処理
ウエーハWに側面から接して該被処理ウエーハW
の上下左右の位置を規定する。
The wafer processing apparatus of the present invention is formed, for example, as shown in FIGS. 3A and 3B. In the figure, W is the wafer to be processed, 1 is a container (cup), 2 is a drain port, 3 is a rotating board that has a hollow part and also functions as a passage for vacuum exhaust, air, and water, and 4 is also a rotating board. The shaft, 5 is a supply means for vacuum, air, water, etc., and 6 is a variable speed motor for driving the rotating substrate. and 7
Hollow columns a, 7b, and 7c are provided with vacuum, air, water, etc. through the rotating base plate on which the columns are installed, and function as vacuum chucks, air bearings, and water bearings. Also 8a, 8
b is a side roller, which touches the wafer W to be processed W floating from the hollow support from the side due to the effect of air or water bearing, and rolls the wafer W to be processed W by the effect of air or water bearings.
Specifies the top, bottom, left, and right positions of .

なお該コロの側面には、被処理ウエーハの上下
位置を規定するためにV字形の溝が設けられる。
Note that a V-shaped groove is provided on the side surface of the roller to define the vertical position of the wafer to be processed.

9a,9bは同一の方向に回転する一対の洗浄
ブラシである。この洗浄ブラシはx1の位置から被
処理ウエーハWを挾んでx2の位置まで前進し回転
して、被処理ウエーハWに自転の力を与えながら
その両面を同時にスクラブする機能を有する。上
記自転の力は、洗浄ブラシ9aと9bの回転数、
直径、ウエーハに対する接触圧力等を変えそれぞ
れの洗浄ブラシがウエーハに及ぼす摩擦力を変え
ることによつて与えられる。ここで被処理ウエー
ハを側面コロ8a,8bに押し当てて保持するた
めには、該押し当て方向に摩擦力を与える方向に
回転する洗浄ブラシ例えば9bの摩擦力を他の洗
浄ブラシ9aよりも大きくすることが必要であ
る。このようにウエーハに対し十分なスクラブを
行い、しかも回転力を生ぜしめるためには、互い
に反対方向にウエーハを擦るように両ブラシを回
転駆動することが有効である。更にウエーハを回
転させるためには、両摩擦力を総合した力の作用
線はウエーハの重心を外れていることが必要であ
るから、ブラシの長さはその先端部がウエーハの
中心点Owを少し越えるx2の位置に到達するよう
選定される。なお洗浄ブラシ9a,9bは、いわ
ゆるブラシ状ではなくスポンジ状のものでも良
い。この処理中、ウエーハはウオーターベアリン
グによつて浮上保持されており、側面コロ8a,
8b及び洗浄ブラシ9a,9bとの接触以外には
固体と接触することはない。10は上記洗浄ブラ
シを回転駆動せしめるためのモータで、11は回
転伝達手段である。又12a,12bは被処理ウ
エーハWの両面に洗浄液(多くは純水)をふきか
ける注液手段、mR1は回転基板3の回転を示す矢
印し、mR2は被処理ウエーハWの自転を示す矢印
し、msは回転ブラシ9a,9bの前進方向を示
す矢印しである。
9a and 9b are a pair of cleaning brushes that rotate in the same direction. This cleaning brush has the function of holding the wafer W to be processed from the x 1 position, moving forward to the x 2 position, rotating, and simultaneously scrubbing both sides of the wafer W while applying rotational force to the wafer W. The above-mentioned rotational force is the number of rotations of the cleaning brushes 9a and 9b,
This is achieved by changing the frictional force that each cleaning brush exerts on the wafer by changing the diameter, contact pressure on the wafer, etc. Here, in order to press and hold the wafer to be processed against the side rollers 8a and 8b, the frictional force of the cleaning brush 9b, which rotates in a direction that applies a frictional force in the pressing direction, must be made larger than that of the other cleaning brushes 9a. It is necessary to. In order to scrub the wafer sufficiently and to generate rotational force, it is effective to drive both brushes to rotate so as to scrub the wafer in opposite directions. Furthermore, in order to rotate the wafer, the line of action of the combined force of both frictional forces must be off the center of gravity of the wafer, so the length of the brush should be such that its tip is slightly away from the center point Ow of the wafer. It is chosen to reach a position exceeding x 2 . Note that the cleaning brushes 9a and 9b may not be so-called brush-like but may be sponge-like. During this process, the wafer is held floating by water bearings, and the side rollers 8a,
8b and cleaning brushes 9a, 9b, there is no contact with solids. 10 is a motor for rotationally driving the cleaning brush, and 11 is a rotation transmission means. Further, 12a and 12b are injection means for spraying a cleaning liquid (usually pure water) onto both sides of the wafer W to be processed, m R1 is an arrow indicating the rotation of the rotating substrate 3, and m R2 is an arrow indicating the rotation of the wafer W to be processed. ms is an arrow mark indicating the forward direction of the rotating brushes 9a and 9b.

そして本発明の装置に於ては、図のように被処
理ウエーハWの中心Owを回転基板3の回転中心
Osから側面コロ配設方向へずらしたことも一つ
の特徴であり、これによつてウオーターベアリン
グ若しくはエアーベアリング効果によつて被処理
ウエーハWを中空支柱7a,7b,7cから浮上
せしめた状態でも側面コロ8a,8bのみで回転
する回転基板3上に支持することができるので後
に説明する該ウエーハWのジエツト洗浄やスピン
乾燥が効果的に行われるようになる。
In the apparatus of the present invention, the center Ow of the wafer W to be processed is the center of rotation of the rotating substrate 3 as shown in the figure.
Another feature is that the rollers are shifted from Os in the direction in which the side rollers are disposed. Since the wafer W can be supported on the rotating substrate 3 by only the rollers 8a and 8b, jet cleaning and spin drying of the wafer W, which will be described later, can be effectively performed.

第4図は例えば被処理ウエーハWをスピン乾燥
している状態を示したもので、高速で回転してい
る例えば中空な回転円板3から中空支柱7b,7
cと図示されない7aに、回転円板3の回転軸4
から導入された乾燥空気又は窒素が供給され、こ
れら支柱から噴出されて被処理ウエーハWが浮上
せしめられる。そしてこの際被処理ウエーハWの
中心Owが、回転円板3の回転中心Osから側面コ
ロ8b及び図示されない8aの方にその中心をず
らして搭載されるので、該被処理ウエーハWは側
面コロ8b及び図示されない8cに押しつけら
れ、該コロ8a,8bのV字形溝によつて上面左
右の位置決めがなされた状態で支持され、前記中
空支柱7b,7c及び図示されない7aから浮き
上つた状態で回転基板3にのつて高速回転し、表
面に付着している水が飛散せしめられる。なお図
中gはエアーの噴出状態を示す矢印し、mR1は回
転基板の回転状態を示す矢印しである。
FIG. 4 shows a state in which, for example, a wafer W to be processed is being spin-dried.
c and 7a not shown, the rotation axis 4 of the rotating disk 3
Dry air or nitrogen introduced from the support is supplied and ejected from these supports to float the wafer W to be processed. At this time, since the center Ow of the wafer W to be processed is shifted from the center of rotation Os of the rotating disk 3 toward the side rollers 8b and 8a (not shown), the wafer W to be processed is mounted on the side rollers 8b and 8a (not shown). The rotating board is pressed against 8c (not shown), is supported in a state in which the left and right positions of the upper surface are determined by the V-shaped grooves of the rollers 8a, 8b, and is raised from the hollow supports 7b, 7c and 7a (not shown). 3, it rotates at high speed and the water adhering to the surface is scattered. Note that g in the figure is an arrow indicating the state of air ejection, and m R1 is an arrow indicating the rotating state of the rotating board.

次に上記実施例に示したウエーハ処理装置の動
作について、半導体被処理ウエーハのスクラブ洗
浄,ジエツト洗浄,スピン乾燥を連続して行う例
を用い第5図イ乃至ロに示す模式工程断面図を参
照して説明する。
Next, regarding the operation of the wafer processing apparatus shown in the above embodiment, please refer to the schematic process cross-sectional diagrams shown in FIGS. and explain.

第5図イ参照 先ず被処理基板Wは、洗浄ブラシ9a,9bが
後退しており、中空の回転基板3が停止し且つ矢
印Vに示すように真空に排気され中空支柱7b,
7c及び図示されない7aが真空チヤツクとして
機能している状態に於て、側面コロ8b及び図示
されない8aで側面をガイドして中空支柱7b,
7c及び図示されない7a上に搭載固定される。
Refer to FIG. 5A. First, the cleaning brushes 9a and 9b are retracted, the hollow rotating substrate 3 is stopped, and the substrate W to be processed is evacuated as shown by the arrow V, and the hollow support 7b,
7c and 7a (not shown) are functioning as a vacuum chuck, the side rollers 8b and 8a (not shown) guide the sides of the hollow support 7b,
It is mounted and fixed on 7c and 7a (not shown).

第5図ロ参照 次いで洗浄ブラシ9a及び9b(同時に動く)
を、被処理ウエーハWの両面に接し且つこれを挾
み込みながら、先端が被処理ウエーハWの中心
Owを越える位置まで矢印しmsに示すように前進
させる。(被処理ウエーハWは真空チヤツク状態) 第5図ハ参照 次いで中空回転基板3から純水若しくはエアー
を供給し、中空支柱7b,7c及び図示されない
7aをウオータベアリング若しくはエアーベアリ
ングに切換へ(Aは純水若しくはエアーの噴出状
態を示す矢印し)、被処理ウエーハWを浮上せし
めた状態に於て、前述したように該ウエーハWに
対する摩擦力の異る洗浄ブラシを同一方法(矢印
mB1及びmB2で示す)に回転させ、前記摩擦力の
差によつて該被処理ウエーハWを自転せしめなが
ら、これら清浄ブラシ9a,9bによつてその両
面のスクラブ洗浄を行う。この際矢印しwaに示
すように被処理ウエーハWの両面に洗浄水(通常
純水)がふき掛けられる。なおこの洗浄水は洗浄
ブラシの軸から供給する場合もある。
See Figure 5B Next, cleaning brushes 9a and 9b (move simultaneously)
is in contact with both sides of the wafer W to be processed, and while sandwiching the wafer W, make sure that the tip is at the center of the wafer W to be processed.
Move the arrow forward to a position beyond Ow as shown in ms. (The wafer W to be processed is in a vacuum chuck state.) Refer to FIG. In a state where the wafer W to be processed is floated, cleaning brushes having different frictional forces against the wafer W are used in the same manner (arrows indicate the jetting state of pure water or air) as described above.
m B1 and m B2 ), and while the wafer W to be processed rotates on its own axis due to the difference in frictional force, both surfaces of the wafer W are scrubbed by the cleaning brushes 9a and 9b. At this time, both surfaces of the wafer W to be processed are sprayed with cleaning water (usually pure water) as shown by the arrow w a . Note that this cleaning water may also be supplied from the shaft of the cleaning brush.

第5図ニ参照 スクラブ洗浄が完了したならば、中空支柱7
b,7c及び図示されない7aを真空チヤツクに
切換え被処理ウエーハWを固持した後洗浄ブラシ
9a,9bは元の位置に引き戻す。
See Figure 5 D. Once the scrubbing is complete, the hollow support 7
After switching the vacuum chucks b, 7c and 7a (not shown) to hold the wafer W to be processed, the cleaning brushes 9a, 9b are returned to their original positions.

第5図ホ参照 次いで被処理ウエーハWを真空チヤツクした状
態で、回転基板3を回転を開始し、回転数を除々
に上げて行く。mR1は回転を示す矢印しである。
Refer to FIG. 5E. Next, while the wafer W to be processed is vacuum chucked, the rotating substrate 3 is started to rotate, and the rotational speed is gradually increased. m R1 is an arrow indicating rotation.

第5図ヘ参照 所定の回転数に達したならば中空支柱7b,7
c及び図示されない7aをエアー若しくはウオー
タベアリング機能に切換える。
Refer to Fig. 5. When the specified rotation speed is reached, the hollow supports 7b, 7
c and 7a (not shown) to the air or water bearing function.

この状態で被処理基板Wは中空支柱上に浮上
し、遠心力によつて側面コロ8b及び図示されな
い8aに押しつけられ該側面コロで支持された状
態で回転基板3と共に回転する。次いでこの状態
に於て図示しない注水手段により被処理ウエーハ
Wの両面に矢印しwaで示すように純水をふき付
け、該ウエーハWのいわゆるジエツト洗浄を行
う。
In this state, the substrate W to be processed floats on the hollow column, is pressed against the side rollers 8b and 8a (not shown) by centrifugal force, and rotates together with the rotating substrate 3 while being supported by the side rollers. Next, in this state, pure water is sprayed onto both surfaces of the wafer W to be processed as indicated by the arrow w a by a water injection means (not shown), thereby performing so-called jet cleaning of the wafer W.

第5図ト参照 ジエツト洗浄を終了したならば、中空支柱7
b,7c及び図示されない7aをエアーベアリン
グ機能となし、回転基板3の回転数を更に所定の
高速度まで上昇せしめ、被処理ウエーハWが中空
支柱から浮上し側面コロ8b及び図示されない8
aのみで支持されて回転基板3と共に高速回転せ
しめられて、該被処理ウエーハWのスピン乾燥が
なされる。
Refer to Figure 5. After jet cleaning is completed, the hollow support 7
b, 7c and 7a (not shown) serve as an air bearing function, and the rotation speed of the rotating substrate 3 is further increased to a predetermined high speed, and the wafer W to be processed floats up from the hollow support, and the side rollers 8b and 8 (not shown)
The wafer W to be processed is spin-dried by being supported only by a and rotating at high speed together with the rotating substrate 3.

第5図チ参照 上記スピン乾燥が終了したならば中空支柱7
b,7c及び図示されない7aを真空チヤツク機
能に切換え、被処理ウエーハWを中空支柱上に固
定せしめた状態で回転基板3が停止される。
Refer to Figure 5 H. Once the above spin drying is completed, the hollow support 7
b, 7c and 7a (not shown) are switched to the vacuum chuck function, and the rotating substrate 3 is stopped with the wafer W to be processed fixed on the hollow support.

そして以後図示しないが、該被処理ウエーハは
移送手段により次工程の処理装置或るいは格納容
器に移される。
Although not shown hereinafter, the wafer to be processed is transferred to a processing device for the next process or a storage container by a transfer means.

(g) 発明の効果 以上説明したように本発明に係る上記実施例の
ウエーハ処理装置に於ては、被処理ウエーハの移
動を行わずに1台の装置内でスクラブ洗浄,ジエ
ツト洗浄,スピン乾燥を連続して行うことができ
る。従つて本発明によれば、半導体装置のウエー
ハプロセスに於て不純物導入,気相成長,金属皮
膜形成等のウエーハ加工の直前に後われるスクラ
ブ洗浄,ジエツト洗浄,スピン乾燥よりなる前処
理工程が1台の装置で行えるので、設備費用が低
減すると同時に専有面積も縮小し、該前処理工程
のインライン化が極めて容易になる。
(g) Effects of the Invention As explained above, the wafer processing apparatus of the above embodiment according to the present invention can perform scrub cleaning, jet cleaning, and spin drying in one apparatus without moving the wafer to be processed. can be performed consecutively. Therefore, according to the present invention, in the wafer process of semiconductor devices, the pretreatment process consisting of scrub cleaning, jet cleaning, and spin drying, which is performed immediately before wafer processing such as impurity introduction, vapor phase growth, and metal film formation, is performed in one step. Since the pretreatment process can be carried out using a single unit of equipment, the equipment cost is reduced and the area occupied is also reduced, making it extremely easy to inline the pretreatment process.

又本発明に係るウエーハ処理方法及び装置に於
ては、スクラブ洗浄,ジエツト洗浄,スピン乾燥
の間で被処理ウエーハの移動がなされないことに
より、従来ベルト等の移送手段によつて生じてい
た汚染が防止され、且つ前記実施例の説明からも
明らかなようにスクラブ洗浄,ジエツト洗浄,ス
ピン乾燥に際して、被処理ウエーハは側面コロに
よつて2点のみで支持されるので装置内に於ける
汚染も極めて少ない。従つて本発明によれば前記
前処理工程内に於ける被処理ウエーハの汚染が防
止されるので、ウエーハプロセスの歩留まりが向
上する。
Furthermore, in the wafer processing method and apparatus according to the present invention, since the wafer to be processed is not moved between scrub cleaning, jet cleaning, and spin drying, contamination that conventionally occurs with transfer means such as belts can be avoided. In addition, as is clear from the description of the above embodiments, during scrub cleaning, jet cleaning, and spin drying, the wafer to be processed is supported at only two points by the side rollers, so contamination inside the apparatus is also prevented. Very few. Therefore, according to the present invention, contamination of the wafer to be processed during the pretreatment step is prevented, so that the yield of the wafer process is improved.

なお上記実施例のウエーハ処理装置は、スクラ
ブ洗浄,ジエツト洗浄,スピン乾燥の工程を単独
に行う場合、及び2工程を連続して行う場合に於
ても勿論適用できる。
It should be noted that the wafer processing apparatus of the above embodiment can of course be applied to cases in which the steps of scrub cleaning, jet cleaning, and spin drying are carried out individually, and in cases in which the two steps are carried out consecutively.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のスクラブ洗浄装置の模式図、第
2図は従来のジエツト洗浄及びスピン乾燥装置の
模式図、第3図は本発明に係るウエーハ処理装置
の一実施例に於ける上面模式図イ及び透視側面模
式図ロ、第4図は同実施例に於ける中空支柱の機
能説明図で、第5図イ乃至チは同実施例の動作を
示す工程断面図である。 図に於て、1は容器(カツプ)、3は回転基板、
4は回転軸、5は真空、エアー、水等の供給手
段、6は可変速モータ、7a,7b,7cは中空
支柱、8a,8bは側面コロ、9a,9bは洗浄
ブラシ、10はブラシ駆動用モータ、11は回転
伝達手段、12a,12bは注水手段、Wは被処
理ウエーハ、mR1は回転基板の回転を示す矢印
し、mR2は被処理ウエーハの自転を示す矢印し、
msは洗浄ブラシの移動を示す矢印し、Owは被処
理ウエーハの中心、Osは回転基板の回転中心、
x2は前進時のブラシ先端位置を示す。
FIG. 1 is a schematic diagram of a conventional scrub cleaning device, FIG. 2 is a schematic diagram of a conventional jet cleaning and spin drying device, and FIG. 3 is a schematic top view of an embodiment of a wafer processing device according to the present invention. A, a perspective schematic side view B, and FIG. 4 are functional explanatory diagrams of the hollow support in the same embodiment, and FIGS. 5A to 5H are process sectional views showing the operation of the same embodiment. In the figure, 1 is a container (cup), 3 is a rotating board,
4 is a rotating shaft, 5 is a supply means for vacuum, air, water, etc., 6 is a variable speed motor, 7a, 7b, 7c are hollow columns, 8a, 8b are side rollers, 9a, 9b are cleaning brushes, 10 is a brush drive 11 is a rotation transmission means, 12a and 12b are water injection means, W is a wafer to be processed, m R1 is an arrow indicating the rotation of the rotating substrate, m R2 is an arrow indicating the rotation of the wafer to be processed,
ms is an arrow indicating the movement of the cleaning brush, Ow is the center of the wafer to be processed, Os is the rotation center of the rotating substrate,
x 2 indicates the brush tip position when moving forward.

Claims (1)

【特許請求の範囲】 1 軸が互いにほゞ平行である一対の円筒状ブラ
シの間に被処理ウエーハを挾み、前記ブラシから
前記ウエーハに加えられる摩擦力によつて前記ウ
エーハを回転せしめながら、前記ウエーハの両面
を同時にスクラブし、 前記スクラブ処理中前記ウエーハは、流体を噴
出させて板状物体を保持する保持装置によつて前
記ウエーハの表面及び背面には前記ブラシ以外の
固体が接触しない状態で保持されており、 前記一対のブラシの回転駆動は、前記ウエーハ
との間に生ずる摩擦力が互いに反対方向で且つそ
の絶対値が異なるように行い、 前記スクラブ処理終了後、前記ブラシを退避さ
せ、前記保持装置によつて前記ウエーハの表面及
び背面には固体が接触しない状態で前記ウエーハ
を保持し、該ウエーハを前記保持装置に連結され
た回転駆動装置によつて回転させながら、 前記ウエーハの表面或いは背面に付着した異物
を流し去るための流体を送吹することを特徴とす
るウエーハ処理方法。 2 被処理ウエーハの表面及び背面をスクラブす
る一対の円筒状ブラシであつて、前記ウエーハと
の間に生ずる摩擦力が互いに反対方向であり、且
つその絶対値が異なるように回転するウエーハス
クラブ手段と、 流体の噴出によつて前記ウエーハを非接触的に
保持するウエーハ保持手段と、 該ウエーハ保持手段に保持された状態のウエー
ハを、前記ウエーハ保持手段に連結された回転駆
動装置によつて回転させる手段と、 前記回転動作中のウエーハに、該ウエーハの表
面或いは背面に付着した異物を流し去るための流
体を送吹する手段と、 前記ブラシを前記回転動作を妨げない位置に退
避させる手段とを 包含して成ることを特徴とするウエーハ処理装
置。
[Scope of Claims] 1. A wafer to be processed is sandwiched between a pair of cylindrical brushes whose axes are substantially parallel to each other, and while the wafer is rotated by the frictional force applied from the brushes to the wafer, Both sides of the wafer are simultaneously scrubbed, and during the scrubbing process, the wafer is kept in a state where no solid body other than the brush comes into contact with the front and back surfaces of the wafer by means of a holding device that jets fluid and holds the plate-like object. The pair of brushes are rotated so that the frictional forces generated between the pair of brushes and the wafer are in opposite directions and have different absolute values, and after the scrubbing process is completed, the brushes are retracted. , holding the wafer by the holding device in a state where no solid objects come into contact with the front and back surfaces of the wafer, and rotating the wafer by a rotational drive device connected to the holding device; A wafer processing method characterized by blowing a fluid to wash away foreign matter attached to the surface or back surface. 2. A wafer scrubbing means, which is a pair of cylindrical brushes that scrub the front and back surfaces of the wafer to be processed, and rotates so that the friction forces generated between the brushes and the wafer are in opposite directions and have different absolute values. , wafer holding means for holding the wafer in a non-contact manner by ejecting fluid; and rotating the wafer held by the wafer holding means by a rotation drive device connected to the wafer holding means. means for blowing a fluid onto the rotating wafer to wash away foreign matter adhering to the surface or back surface of the wafer; and means for retracting the brush to a position where it does not interfere with the rotating operation. A wafer processing apparatus comprising:
JP58248427A 1983-12-29 1983-12-29 Wafer treatment and device thereof Granted JPS60143634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58248427A JPS60143634A (en) 1983-12-29 1983-12-29 Wafer treatment and device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58248427A JPS60143634A (en) 1983-12-29 1983-12-29 Wafer treatment and device thereof

Publications (2)

Publication Number Publication Date
JPS60143634A JPS60143634A (en) 1985-07-29
JPH0414494B2 true JPH0414494B2 (en) 1992-03-13

Family

ID=17177959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58248427A Granted JPS60143634A (en) 1983-12-29 1983-12-29 Wafer treatment and device thereof

Country Status (1)

Country Link
JP (1) JPS60143634A (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260225A (en) * 1985-09-10 1987-03-16 Toshiba Ceramics Co Ltd Cleaning silicon wafer
JPS62121098U (en) * 1986-01-27 1987-07-31
JPS6310548U (en) * 1986-07-08 1988-01-23
JPH0795540B2 (en) * 1988-04-11 1995-10-11 株式会社日立製作所 Method and apparatus for cleaning both sides of substrate using ultrasonic cleaning spray nozzle
JP2767165B2 (en) * 1991-07-31 1998-06-18 信越半導体株式会社 Wafer cleaning tank
JP2890915B2 (en) * 1991-08-13 1999-05-17 信越半導体株式会社 Wafer brush cleaning equipment
US6003185A (en) * 1994-07-15 1999-12-21 Ontrak Systems, Inc. Hesitation free roller
JPH08188249A (en) * 1995-01-05 1996-07-23 Murata Mach Ltd Device for stacking article on pallet
JP2564661Y2 (en) * 1995-01-11 1998-03-09 株式会社エンヤシステム Adhesive plate cleaning device
US5675856A (en) * 1996-06-14 1997-10-14 Solid State Equipment Corp. Wafer scrubbing device
US5862560A (en) * 1996-08-29 1999-01-26 Ontrak Systems, Inc. Roller with treading and system including the same
EP0837493B8 (en) * 1996-10-21 2007-11-07 Ebara Corporation Cleaning apparatus
US5901399A (en) * 1996-12-30 1999-05-11 Intel Corporation Flexible-leaf substrate edge cleaning apparatus
US5868857A (en) 1996-12-30 1999-02-09 Intel Corporation Rotating belt wafer edge cleaning apparatus
JPH10321572A (en) * 1997-05-15 1998-12-04 Toshiba Corp Semiconductor wafer double-side cleaning apparatus and semiconductor wafer polishing method
JP2000176386A (en) * 1998-12-16 2000-06-27 Ebara Corp Substrate cleaning apparatus
US6711775B2 (en) * 1999-06-10 2004-03-30 Lam Research Corporation System for cleaning a semiconductor wafer
KR20010037210A (en) * 1999-10-14 2001-05-07 구본준, 론 위라하디락사 Apparatus and Method of Cleaning Substrate
JP6145334B2 (en) 2013-06-28 2017-06-07 株式会社荏原製作所 Substrate processing equipment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5184371U (en) * 1974-12-26 1976-07-06

Also Published As

Publication number Publication date
JPS60143634A (en) 1985-07-29

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