JPH04111302A - Artificial lattice film - Google Patents
Artificial lattice filmInfo
- Publication number
- JPH04111302A JPH04111302A JP22791990A JP22791990A JPH04111302A JP H04111302 A JPH04111302 A JP H04111302A JP 22791990 A JP22791990 A JP 22791990A JP 22791990 A JP22791990 A JP 22791990A JP H04111302 A JPH04111302 A JP H04111302A
- Authority
- JP
- Japan
- Prior art keywords
- film
- target
- substrate
- xfex
- magnetization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は人工格子膜、特に垂直磁気異方性をもつ新しい
人工格子膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a superlattice film, particularly a new superlattice film having perpendicular magnetic anisotropy.
(従来の技術)
一般に、膜面に垂直な方向に磁化容易軸を有し、室温よ
り高いキュリー温度を有する磁性薄膜は、レーザ光等の
光ビームを照射することによって数μm以下の情報を記
録、再生することができ、高密度の磁気記録媒体として
用いることができる。(Prior art) Generally, a magnetic thin film that has an axis of easy magnetization perpendicular to the film surface and a Curie temperature higher than room temperature records information of several micrometers or less by irradiating it with a light beam such as a laser beam. , and can be used as a high-density magnetic recording medium.
このような記録媒体として、MnB1等の多結晶金属薄
膜、Gd1G (ガドリニウム鉄ガーネット)等の化合
物単結晶薄膜、Tb−Fe 、 Gd−Co 、 Tb
−Co 、 Tb−Fe−Coなどの希土類−鉄族の非
晶質合金膜などがある。Such recording media include polycrystalline metal thin films such as MnB1, compound single crystal thin films such as Gd1G (gadolinium iron garnet), Tb-Fe, Gd-Co, and Tb.
Examples include rare earth-iron group amorphous alloy films such as -Co and Tb-Fe-Co.
Mn旧等の多結晶金属薄膜はキュリー温度(Tc)を利
用して書き込みが行なわれるが、Tc* 360℃程度
と高いため、書き込みに大きなエネルギーを要する欠点
がある。また多結晶体であるため化学量論的な組成の薄
膜を作成する必要が有り、製造が困難であるという欠点
もある。Writing is performed on polycrystalline metal thin films such as Mn old using the Curie temperature (Tc), but since Tc* is as high as about 360° C., there is a drawback that writing requires a large amount of energy. Furthermore, since it is a polycrystalline substance, it is necessary to create a thin film with a stoichiometric composition, which makes it difficult to manufacture.
又、Gd1G等はGGG (ガドリニウムガリウムガー
ネット)単結晶基板上に膜形成が行なわれるため、この
基板の状態に磁気特性が影響されやすいこと、大面積の
基板を得にくい等の欠点がある。Furthermore, since films such as Gd1G are formed on a GGG (gadolinium gallium garnet) single crystal substrate, there are drawbacks such as the fact that the magnetic properties are easily affected by the condition of this substrate and that it is difficult to obtain a large-area substrate.
これに対し、GdCo、TbFe等の希土類−鉄族の非
晶質合金薄膜(RE−丁M膜)は、任意の大きさの磁性
薄膜が形成できること、組成制御が容易であること、結
晶粒界がないため再生S/N比が良好である等の利点を
有し、近年研究が盛んである。しかしながらこのRE−
TM膜は一般に磁気光学ファラデー効果及びカー効果(
Kerr効果)が小さく 、 C/N比等が充分でなく
、また、耐食性に劣る問題があつた。On the other hand, rare earth-iron group amorphous alloy thin films (RE-TM films) such as GdCo and TbFe have the following advantages: a magnetic thin film of any size can be formed, composition can be easily controlled, and grain boundaries Since there is no noise, it has advantages such as a good reproduction S/N ratio, and has been actively researched in recent years. However, this RE-
TM films generally exhibit magneto-optical Faraday effect and Kerr effect (
Kerr effect) was small, C/N ratio etc. were insufficient, and corrosion resistance was poor.
一方、最近新しい垂直磁化膜としてCo/Pt・CO/
Pdなどの人工格子膜が注目されている。これらは通常
のスパッタや超高真空蒸着法で作製されており、Coお
よびPtまたはPdが適当な膜厚(4〜IOA程度)の
とき垂直磁化膜になることが知られている。また、この
膜は400〜500nmという短波長でカー効果が0.
3〜0.4°と大きく、短波長対応の高密度光磁気記録
媒体として期待されている。On the other hand, recently, new perpendicular magnetization films such as Co/Pt/CO/
Superlattice films such as Pd are attracting attention. These are fabricated by ordinary sputtering or ultra-high vacuum evaporation, and it is known that Co, Pt, or Pd forms a perpendicularly magnetized film when the film thickness is appropriate (approximately 4 to IOA). In addition, this film has a Kerr effect of 0.0 at short wavelengths of 400 to 500 nm.
It has a large angle of 3 to 0.4 degrees and is expected to be used as a high-density magneto-optical recording medium compatible with short wavelengths.
(発明が解決しようとする課題)
しかし、これらの人工格子膜は保磁力が1 kOe以下
と小さいという欠点をもつ。特にスパッタやIBS(イ
オンビームスパッタ)で作成した場合には保磁力が30
0〜5000eと小さく、超高真空蒸着法でも高々1
koe以下であった。保磁力が小さいと記録時の印加磁
界により不必要な磁区まで反転してしまうためノイズの
原因になりC/N比が十分に得られなくなる。(Problems to be Solved by the Invention) However, these artificial lattice films have a drawback in that their coercive force is as small as 1 kOe or less. Especially when created by sputtering or IBS (ion beam sputtering), the coercive force is 30
It is as small as 0 to 5000e, and even with ultra-high vacuum evaporation method, it is only 1
It was below koe. If the coercive force is small, unnecessary magnetic domains will be reversed by the applied magnetic field during recording, causing noise and making it impossible to obtain a sufficient C/N ratio.
本発明は短波長でのカー回転角が大きく、垂直磁化と大
きな保磁力を示す新しい組成から成る人工格子膜を提供
することを目的とする。An object of the present invention is to provide a superlattice film having a new composition that has a large Kerr rotation angle at short wavelengths, exhibits perpendicular magnetization, and a large coercive force.
[発明の構成]
(課題を解決するための手段及び作用)本発明はCo1
−xFeX(0≦x≦0.5)からなる第1の膜とRu
からなる第2の膜とが交互に積層されたことを特徴とす
る人工格子膜である。[Structure of the invention] (Means and effects for solving the problem) The present invention is based on Co1
-xFeX (0≦x≦0.5) and Ru
This is an artificial lattice film characterized in that two films are alternately stacked.
本発明においてC011FexおよびRuの各膜厚は垂
直磁化を得るのに重要であり、それぞれ2〜20A及び
2〜60人場合に垂直磁化が得られるため、この膜厚で
あることが好ましい。Ruは結晶構造が稠密六方晶であ
り、その上に形成されたCoも六方晶を取るため垂直磁
化を得易く、かつ保磁力も大きくなる。すなわち、各層
の膜厚が薄い場合の人工格子膜においては一般に表面磁
気異方性がバルクの磁気異方性よりも大きくなるため垂
直の磁化になり易いが、Coの膜厚が大きくなると面内
磁化を生じさせるバルクの磁気異方性が大きくなるため
、垂直磁化になり難くなる。一方、六方晶構造の場合に
はバルクの異方性も垂直磁化を生じさせ易いため、Co
の膜厚がより広い範囲で垂直磁化になり易いと考えられ
る。In the present invention, the film thicknesses of C011Fex and Ru are important for obtaining perpendicular magnetization, and since perpendicular magnetization can be obtained in the case of 2 to 20 A and 2 to 60 A, respectively, these film thicknesses are preferable. Ru has a close-packed hexagonal crystal structure, and Co formed on it also has a hexagonal structure, making it easy to obtain perpendicular magnetization and increasing coercive force. In other words, in a superlattice film where each layer is thin, the surface magnetic anisotropy is generally larger than the bulk magnetic anisotropy, so it tends to become perpendicular magnetization, but as the Co film thickness increases, in-plane magnetization tends to occur. Since the bulk magnetic anisotropy that causes magnetization increases, perpendicular magnetization becomes difficult to occur. On the other hand, in the case of a hexagonal crystal structure, the bulk anisotropy also tends to cause perpendicular magnetization, so Co
It is thought that perpendicular magnetization is likely to occur over a wider range of film thickness.
本人工格子膜は通常のDC/RPスパッタ、イオンビー
ムスパッタ、真空蒸着、 MBEなど多くの成膜法を用
いて作成できる。This artificial lattice film can be formed using many film forming methods such as normal DC/RP sputtering, ion beam sputtering, vacuum evaporation, and MBE.
(実施例) 以下、実施例を用いて本発明の詳細な説明する。(Example) Hereinafter, the present invention will be explained in detail using Examples.
第1表に示した組成系と膜厚から成る人工格子膜をイオ
ンビームスパッタを用いて作成した。An artificial lattice film having the composition system and film thickness shown in Table 1 was created using ion beam sputtering.
第1図はイオンビームスパッタ(IBS)装置の模式図
である。イオンガン(1)で発生したイオンは加速され
てターゲットに照射され、ターゲットを構成している原
子をはね飛ばし、はね飛ばされた原子は基板(S)上に
堆積する。積層膜を作製するためにはターゲットを交互
に回転させる。イオンガン(2)は基板のクリーニング
や成膜中にイオンを照射するためのものである。FIG. 1 is a schematic diagram of an ion beam sputtering (IBS) apparatus. The ions generated by the ion gun (1) are accelerated and irradiated onto the target, and the atoms constituting the target are thrown off, and the thrown off atoms are deposited on the substrate (S). To produce a laminated film, the targets are rotated alternately. The ion gun (2) is used to irradiate ions during substrate cleaning and film formation.
イオンの加速エネルギーが大きすぎるとはね飛ばされた
ターゲットを構成している原子のエネルギーも大きくな
り、その結果基板上で原子の移動が起り易く積層膜中の
原子のミクシングが生じ鋭い界面をもつ人工格子膜を得
にくいことになる。If the acceleration energy of the ions is too large, the energy of the atoms that make up the repelled target will also be large, and as a result, atoms will easily move on the substrate, causing mixing of atoms in the laminated film, resulting in sharp interfaces. This makes it difficult to obtain an artificial lattice film.
種々実験の結果、加速エネルギーEが600eV以下の
とき界面のシャープな人工格子膜を作製できることがわ
かった。As a result of various experiments, it was found that a superlattice film with a sharp interface can be produced when the acceleration energy E is 600 eV or less.
以下の実験はE−500eVで行なった場合について示
した。基板は石英ガラスを用い、Ruと001−xFe
の各ターゲットを用いてターゲットを回転すること
で積層膜を作製した。The following experiment was conducted at E-500 eV. The substrate is made of quartz glass and is made of Ru and 001-xFe.
A laminated film was prepared by rotating the target using each target.
予め4×10″″7Torrの真空度まで排気後、メイ
ンガン(イオンガン1)にA「ガス(純度99.99%
)は分圧が1.5 X 10−’Torrになるまで導
入し、Arをイオン化し、イオンビームとしてターゲッ
トに照射した。ターゲットは所定の時間ごとにCO1□
F e xとRuを交互に回転させ、それぞれの膜厚を
変化させた人工格子膜を作製した。以下、C00−xF
exの膜厚をT、Ruの膜厚をR,Co1−xFe−と
Ru層のくり返し数をnとし、この人工格子膜を(T/
R)nと表示することにする。After evacuating to a vacuum level of 4 x 10''''7 Torr in advance, inject A gas (purity 99.99%) into the main gun (ion gun 1).
) was introduced until the partial pressure reached 1.5 x 10-'Torr, ionized Ar, and irradiated the target as an ion beam. The target is CO1□ every predetermined time.
An artificial lattice film was produced in which Fe x and Ru were alternately rotated to change the thickness of each film. Below, C00-xF
The film thickness of ex is T, the film thickness of Ru is R, and the number of repetitions of Co1-xFe- and Ru layers is n, and this superlattice film is (T/
R) It will be expressed as n.
第1表に各人工格子膜のカー回転角(波長400na+
)および垂直磁化曲線から求めた保持力の値を示した。Table 1 shows the Kerr rotation angle of each superlattice film (wavelength 400na+
) and the coercive force value determined from the perpendicular magnetization curve.
これより本発明の人工格子膜はCo/ Pt人工格子膜
(比較例)よりも保磁力が大きいことがわかる。This shows that the superlattice film of the present invention has a larger coercive force than the Co/Pt superlattice film (comparative example).
第 1 表 [発明の効果] 以上、本発明の人工格子膜は保磁力が大きく。Part 1 table [Effect of the invention] As described above, the superlattice film of the present invention has a large coercive force.
短波長でのカー回転角が大きいので新しい光磁気記録媒
体として有用である。尚、六方晶Co膜は、Ti、Zr
、Hr、Reなどとの積層膜においても可能であり、こ
れらの金属とCoの積層膜も有効である。Since the Kerr rotation angle is large at short wavelengths, it is useful as a new magneto-optical recording medium. Note that the hexagonal Co film is made of Ti, Zr
, Hr, Re, etc., and a laminated film of these metals and Co is also effective.
第1図は本発明の人工格子膜を作製する装置例を示す図
。FIG. 1 is a diagram showing an example of an apparatus for producing the artificial lattice film of the present invention.
Claims (1)
る第1の膜とRuからなる第2の膜とが交互に積層され
たことを特徴とする人工格子膜。An artificial lattice film characterized in that a first film made of Co_1_−_xFe_x (0≦x≦0.5) and a second film made of Ru are alternately laminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22791990A JPH04111302A (en) | 1990-08-31 | 1990-08-31 | Artificial lattice film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22791990A JPH04111302A (en) | 1990-08-31 | 1990-08-31 | Artificial lattice film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04111302A true JPH04111302A (en) | 1992-04-13 |
Family
ID=16868358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22791990A Pending JPH04111302A (en) | 1990-08-31 | 1990-08-31 | Artificial lattice film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04111302A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06231958A (en) * | 1992-08-07 | 1994-08-19 | Internatl Business Mach Corp <Ibm> | Magnetic recording medium |
| JP2009081315A (en) * | 2007-09-26 | 2009-04-16 | Toshiba Corp | Magnetoresistive element and magnetic memory |
| JP2010016408A (en) * | 2009-10-19 | 2010-01-21 | Toshiba Corp | Magnetoresistive element and magnetic memory |
-
1990
- 1990-08-31 JP JP22791990A patent/JPH04111302A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06231958A (en) * | 1992-08-07 | 1994-08-19 | Internatl Business Mach Corp <Ibm> | Magnetic recording medium |
| JP2009081315A (en) * | 2007-09-26 | 2009-04-16 | Toshiba Corp | Magnetoresistive element and magnetic memory |
| US8098514B2 (en) | 2007-09-26 | 2012-01-17 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory |
| JP2010016408A (en) * | 2009-10-19 | 2010-01-21 | Toshiba Corp | Magnetoresistive element and magnetic memory |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zeper et al. | Hysteresis, microstructure, and magneto‐optical recording in Co/Pt and Co/Pd multilayers | |
| JP3042878B2 (en) | Method for sputtering multilayer body for magneto-optical recording | |
| US5112701A (en) | Magneto-optic recording media and process for producing the same | |
| JP2896193B2 (en) | Method for manufacturing oxide crystal orientation film, oxide crystal orientation film, and magneto-optical recording medium | |
| Kadokura et al. | Deposition of Co-Cr films for perpendicular magnetic recording by improved opposing targets sputtering | |
| JPH0744853A (en) | Thin-film magnetic recording medium, magnetic disk drive, manufacture of barium ferrite thin film and longitudinal magnetic recording method | |
| Den Broeder et al. | Co/Ni multilayers with perpendicular magnetic anisotropy: Kerr effect and thermomagnetic writing | |
| JPH04111302A (en) | Artificial lattice film | |
| JPH0567322A (en) | Perpendicular magnetization film and magnetic recording medium | |
| JP2824998B2 (en) | Magnetic film | |
| JPH0462814A (en) | Method for producing artificial grid film | |
| JP2759150B2 (en) | Magnetic recording thin film and method of manufacturing the same | |
| JP2829321B2 (en) | Magneto-optical recording medium | |
| JPH0619859B2 (en) | Magneto-optical recording medium | |
| JP3177281B2 (en) | Magneto-optical recording medium | |
| JP2707561B2 (en) | Artificial lattice magneto-optical recording medium | |
| JPS63273236A (en) | magneto-optical recording medium | |
| JPH05234053A (en) | Perpendicularly magnetizable film | |
| JPH03273540A (en) | Magnetic recording medium and magnetic recording device and spin glass magnetic material | |
| JPH0792936B2 (en) | Method for manufacturing magneto-optical recording element | |
| Song et al. | Magnetic and magneto-optical properties of Tb-Fe-Co/Ta multilayers | |
| JP2997493B2 (en) | Magneto-optical recording medium | |
| JP2876062B2 (en) | Magnetic film | |
| JPH02215106A (en) | Magnetic film | |
| JPH06267130A (en) | Magneto-optical recording medium |