JPH04107934A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To enhance the mechanical strength and moisture resistance of a semiconductor package by molding a chip with resin, and coating the package with a polymerizing catalyst to further polymerize the surface of the package. CONSTITUTION:A semiconductor chip is molded with epoxy resin 1 using a molding die to obtain a device in a mold package. The device is dipped in a bisazide solution 3 to coat the epoxy surface with bisazide that is a photopolymerizing catalyst. The package is then irradiated with ultraviolet radiation, so that more polymerized area 1A is formed on the surface of the epoxy. Before electroplating, the package is treated to remove the residual bisazide 3 from the surfaces of the epoxy 1 and the lead frame 2.

Description

[Detailed Description of the Invention] [Summary] Regarding a method for manufacturing a semiconductor device in which a semiconductor chip is sealed with resin, the reliability of the package is improved even when the package is made smaller by reducing the thickness of the resin. After a semiconductor chip is sealed with a resin, a polymerization catalyst is applied to the surface of the resin, and the surface of the resin is further polymerized by the action of this polymerization catalyst. .

[Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor chip is sealed with resin.

2. Description of the Related Art In recent years, semiconductor devices packaged with resin have been miniaturized by reducing the thickness of the resin. However, if the package is made smaller by simply reducing the resin thickness, the package becomes brittle and the moisture resistance decreases, leading to a decrease in reliability. In order to reduce the size of a device, it is necessary to prevent damage to the reliability of the package due to weakening of the package or reduction in moisture resistance.

[Prior Art] Conventionally, in a method for manufacturing a semiconductor device in which a semiconductor chip is sealed with a resin, a boss cure is performed after the semiconductor chip is sealed with a resin, that is, the semiconductor chip sealed with a resin is By leaving the resin in a predetermined temperature environment for a predetermined period of time, the resin is further cured, thereby strengthening the resin and improving its moisture resistance.

[Problems to be Solved by the Invention] As described above, in the conventional semiconductor device manufacturing method, a boss cure is performed to strengthen the resin and improve moisture resistance. There has been a problem in that it is not possible to obtain the strength and moisture resistance of the package required when reducing the size of the package by reducing the thickness of the resin, and it is not possible to ensure sufficient reliability.

In view of this, it is an object of the present invention to provide a method for manufacturing a semiconductor device that can improve the reliability of the package even when the package is made smaller by reducing the thickness of the resin. purpose.

[Means for Solving the Problems] In the method for manufacturing a semiconductor device according to the present invention, after a semiconductor chip is sealed with a resin, a polymerization catalyst is applied to the surface of the resin, and then the resin is bonded by the action of the polymerization catalyst. This involves further polymerizing the surface of the material.

1 Effect] In the present invention, the surface of the resin is further polymerized by the action of the polymerization catalyst adhered to the surface of the resin, so that the strength and moisture resistance of the package can be improved.

[Embodiment] An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

1A to 1F are diagrams showing an embodiment of the method for manufacturing a semiconductor device according to the present invention. In particular, FIG. 1A shows a semiconductor chip (not shown) using a predetermined mold. The state is shown sealed with epoxy resin 1 and packaged. Note that 2 is a lead frame.

Next, in this embodiment, this packaged semiconductor chip is, for example, 175±
The epoxy resin 1 is left to stand for, for example, 5 to 8 hours in an environment of 15° to perform a boss cure, thereby curing the entire epoxy resin 1.

Next, the semiconductor chip that has been subjected to this boss cure is
As shown in Figure C, the epoxy resin 1 is immersed in a solution of the bisazide compound 3 to coat the surface of the epoxy resin 1 with the bisazide compound as a photopolymerization catalyst. In addition, as the bisazide compound 3, 4,4'-diazidochalcone, 2,6-di(4°-azidobenzylidene)cyclohexane, 2,6-di(4'-azidobenzal)-4=methylcyclohexanone○ It is also possible to use H3 or the like.

Next, pull up the package, as shown in the first diagram.
Ultraviolet rays are applied to the package coated with bisazide compound 3.
For example, irradiation is performed at 200 mW for 10 seconds. In this way, as shown in FIG. 1E, a further polymerized portion IA is formed on the surface of the epoxy resin 1. this is,
For example, as shown in FIG. 2, a crosslinking reaction occurs.

Next, plating pretreatment is performed to remove the excess bisazide compound 3 on the epoxy resin 1 and the bisazide compound 3 on the lead frame 2, as shown in FIG. 1F. Here, it is possible to obtain a semiconductor device in which the surface of the epoxy resin 1 according to this embodiment is further polymerized.

In the above embodiments, the case where epoxy resin is used as the resin for sealing the semiconductor chip has been described, but instead of this, various resins such as phenol resin can be used.

Furthermore, in the above embodiment, a case was described in which the surface of the epoxy resin 1 was further polymerized by using a bisazide compound, which is an example of a photopolymerization catalyst, as a polymerization catalyst. It is also possible to further polymerize the surface of the epoxy resin 1 by using a photopolymerization catalyst or a thermal polymerization catalyst.

[Effects of the Invention] As described above, according to the present invention, after a semiconductor chip is sealed with a resin, a polymerization catalyst is deposited on the surface of the resin, and the surface of the resin is further enhanced by the action of the polymerization catalyst. By adopting the method of molecularization, it is possible to improve the strength and moisture resistance of the package, so it is also possible to make the package smaller by reducing the thickness of the resin.
Reliability can be improved.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing an embodiment of the method for manufacturing a semiconductor device according to the present invention, and FIG. 2 is a diagram showing a reaction when the surface of the epoxy resin is further polymerized. 1...Epoxy resin IA...More polymerized part of the epoxy resin 2...
... Lead frame 3 ... Bisazide compound (B) 175±15° 5 to 8 hours (C) An embodiment of the method for manufacturing a semiconductor device according to the present invention Fig. 1 1 Semiconductor according to the present invention Figure 1: Example of manufacturing method for packaging 1

Claims (1)

[Scope of Claims] A step of sealing a semiconductor chip with a resin, a step of depositing a polymerization catalyst on the surface of the resin, and a step of further polymerizing the surface of the resin by the action of the polymerization catalyst. A method of manufacturing a semiconductor device, comprising: