JP7478945B2 - Wafer processing system and wafer processing method - Google Patents

Description

The present invention relates to a wafer processing system and a wafer processing method, and in particular to a technology for dicing with a blade after grooving with laser processing.

As semiconductor devices become more sophisticated, the number of wafers with mechanically fragile films (such as low-k and high-k films) on the device surface is increasing. When these wafers are blade diced, the mechanical load during dicing can cause the film to break or peel off. If this peeling reaches the device, it will become a defective chip, which will cause a decrease in yield. To prevent this decrease in yield, a process is commonly used in which the fragile film on the blade dicing processing line is removed using laser processing, which places a small mechanical load, before blade dicing (see Patent Document 1). In this process, dicing is performed using two machines: a laser processing machine in the lead and a blade dicing machine in the trail.

In addition, in recent years, processing lines have become narrower in order to reduce chip size in line with the increasing performance of chips and to increase the number of chips that can be taken from one wafer. As a result, the width of the processed grooves has become smaller in both laser processing and blade processing, and there is a demand for higher precision processing.

JP 2005-064231 A

In the above process, the blade dicing needs to process the center of the laser-machined groove. This is because if the blade edge does not enter the laser-machined groove, mechanical load will cause the film to peel off. In other words, the blade dicing in this process needs to recognize the chip pattern and the pre-machined laser-machined groove.

When the equipment corrects the processing position in the preceding laser processing process, the relative position of the chip and the laser-processed groove from that processing line shifts to the correct position from the previous processing line. However, this corrected position cannot be grasped in the subsequent blade dicing, so the laser-processed groove and the blade processing position shift relatively from that line. To prevent this, it is necessary to recognize the laser-processed groove position on all processing lines during blade dicing, but this takes time and is not practical.

The present invention was made in consideration of these circumstances, and aims to provide a wafer processing system and a wafer processing method that perform appropriate blade processing on laser-machined grooves.

One aspect of the wafer processing system for achieving the above object is a wafer processing system including a laser processing device, a blade dicing device, and a memory unit. The laser processing device includes a first stage that holds a wafer with a planned division line formed on its surface, a laser irradiation unit that irradiates the surface of the wafer with laser light, a groove processing control unit that processes grooves along the planned division line of the wafer with the laser light by moving the first stage and the laser irradiation unit relatively, an acquisition unit that acquires positional deviation information indicating the positional deviation of the groove with respect to the planned division line by imaging the surface of the wafer with the imaging unit, and a memory control unit that associates the positional deviation information with information unique to the wafer and stores it in the memory unit. The blade dicing device processes a wafer with grooves formed by the laser processing device as an object to be processed, and the blade dicing device includes a positional information acquisition unit that acquires positional deviation information corresponding to the wafer from the memory unit, a second stage that holds the wafer, a blade that cuts the wafer, and a cutting processing control unit that cuts the wafer along the groove with the blade by moving the second stage and the blade relatively based on the acquired positional deviation information.

According to this aspect, the laser-machined grooves can be properly machined with a blade.

It is preferable that the imaging unit is disposed downstream of the laser irradiation unit in the relative movement direction of the first stage and the laser irradiation unit. This allows the imaging unit to capture an image of the wafer surface immediately after the grooves are machined.

It is preferable that the laser irradiation unit has an objective lens that focuses the laser light, and the imaging unit images the surface of the wafer through the objective lens. This allows the focus of the laser irradiation unit and the imaging unit to be adjusted using a common objective lens, and allows the groove processing and imaging of the wafer surface to be performed using a common objective lens.

It is preferable that the focus of the laser irradiation unit and the imaging unit can be adjusted independently of each other. This allows groove processing and imaging of the wafer surface to be performed by the laser irradiation unit and the imaging unit, each with an adjusted focus.

It is preferable that the acquisition unit acquires the positional deviation information at the same time as the groove is processed. This can reduce the time required to acquire the positional deviation information.

One aspect of the wafer processing method for achieving the above object is a wafer processing method including: a grooving processing control step of processing grooves with laser light along the planned dividing lines of the wafer by relatively moving a first stage that holds a wafer having a planned dividing line formed on its surface and a laser irradiation unit that irradiates the surface of the wafer with laser light; an acquisition step of acquiring misalignment information indicating the misalignment of the groove with respect to the planned dividing line by imaging the surface of the wafer; a storage control step of linking the misalignment information to information unique to the wafer and storing it in a storage unit; a position information acquisition step of acquiring from the storage unit the misalignment information linked to the information unique to the wafer having the groove formed; and a cutting processing control step of cutting the wafer having the groove formed along the groove with the blade by relatively moving a second stage that holds the wafer having the groove formed on its surface and a blade that cuts the wafer having the groove formed on its surface based on the acquired misalignment information.

According to this aspect, the laser-machined grooves can be properly machined with a blade.

According to the present invention, it is possible to perform blade processing appropriately on laser-machined grooves.

FIG. 1 is an overview of a wafer processing system. FIG. 2 is a plan view of the wafer. FIG. 3 is a schematic diagram of the laser processing apparatus according to the first embodiment. FIG. 4 is a schematic diagram of a blade dicing device. FIG. 5 is a flowchart showing an example of a process of a wafer processing method. FIG. 6 is a diagram showing an example of a barcode provided on a wafer. FIG. 7 is a diagram illustrating an example of data stored in a database server. FIG. 8 is a schematic diagram of a laser processing apparatus according to the second embodiment.

A preferred embodiment of the present invention will now be described in detail with reference to the accompanying drawings. In this embodiment, the X direction, the Y direction, and the Z direction are mutually orthogonal. Furthermore, the X direction and the Y direction are horizontal directions, and the Z direction is vertical.

First Embodiment
[Overall configuration of wafer processing system]
1 is a schematic diagram of a wafer processing system 10. The wafer processing system 10 includes a laser processing device 20, a blade dicing device 50, and a database server 60.

The laser processing apparatus 20 is an apparatus that performs laser processing on a workpiece having a laminated film including a metal film formed on its surface. Here, the laser processing apparatus 20 irradiates a wafer W (workpiece) having streets L formed on its surface as planned division lines with laser light, which is processing light, along the streets L, to process a groove C, which is a processed groove (kerf). The blade dicing apparatus 50 is an apparatus that cuts the workpiece with a blade. Here, the blade dicing apparatus 50 cuts the wafer W having the groove C formed therein.

The database server 60 corresponds to a memory unit in which the positional deviation information described below is stored, and has a server function and a large-capacity storage. The laser processing device 20 and the database server 60, and the blade dicing device 50 and the database server 60 are each connected to be able to communicate with each other via a network, such as a P2P (Peer to Peer) connection. The database server 60 may be provided in the laser processing device 20 or the blade dicing device 50.

[Overall configuration of laser processing device]
2 is a plan view of a wafer W. The wafer W is a laminate in which a low-k film and a functional film forming a circuit are laminated on the surface of a substrate such as silicon. The wafer W is partitioned into a plurality of regions by a plurality of streets L arranged in a lattice pattern in directions intersecting each other. In FIG. 2, the streets parallel to the X direction are denoted as L _X and the streets parallel to the Y direction are denoted as L _Y. Devices such as ICs (Integrated Circuits) and LSIs (Large Scale Integrations) are formed on chips C, which are the regions partitioned by the streets L _X and L _Y.

Figure 3 is a schematic diagram of the laser processing device 20 according to the first embodiment. As shown in Figure 3, the laser processing device 20 includes a stage 22, a laser light source 24, a laser irradiation unit 26, a Z base 28 for the laser irradiation unit, a camera 30, a Z base 32 for the camera, a common base 34, a moving mechanism 36, and a control device 38.

Stage 22 (an example of a first stage) holds wafer W on its upper surface with the surface of the wafer W facing upward in the Z direction. Stage 22 is equipped with a motor (not shown) and is configured to be movable in the X and Y directions and rotated within the XY plane by movement mechanism 36.

The laser light source 24 includes a laser oscillator (not shown) and generates laser light, which is processing light. The laser irradiation unit 26 irradiates the surface of the wafer W with laser light. The laser irradiation unit 26 includes an irradiation optical system (not shown) including an objective lens 26A, and the laser light generated by the laser light source 24 is converged and emitted by the irradiation optical system. The Z base 28 for the laser irradiation unit holds the laser irradiation unit 26 with the objective lens 26A of the laser irradiation unit 26 facing downward in the Z direction.

The camera 30 (an example of an imaging unit) is equipped with an observation optical system (not shown) including a light source (not shown), an imaging element (not shown), and an objective lens 30A, and images (observes) the surface of the wafer W. The camera 30 is equipped with a light source (not shown) equivalent to a 250 W metal halide light source, and is capable of imaging with an exposure time of less than 1 μs. The objective lens 30A has a performance of approximately a numerical aperture NA=0.4 and a resolution=0.8 μm at a wavelength of 550 nm of the observation light.

The camera Z base 32 holds the camera 30 with the objective lens 30A of the camera 30 facing downward in the Z direction. The common base 34 holds the laser irradiation unit Z base 28 and the camera Z base 32.

In this way, the laser irradiation unit 26 and the camera 30 are held so that their respective focuses can be adjusted. In addition, the common base 34 holds the camera 30 downstream of the laser irradiation unit 26 in the relative X-direction movement direction between the common base 34 and the stage 22 during laser processing, which will be described later.

The control device 38 performs overall control of the laser processing device 20. The laser processing device 20 processes grooves along the streets _LX and _LY of the wafer W in accordance with the control of the control device 38.

That is, the control device 38 causes the laser light source 24 to generate a laser beam. The control device 38 also controls a motor (not shown) to move the Z base 28 for the laser irradiation unit in the Z direction so that the focal point of the objective lens 26A of the laser irradiation unit 26 is aligned with a desired position of the wafer W in the Z direction.

The control device 38 controls a motor (not shown) to move the camera Z base 32 in the Z direction so that the focal point of the objective lens 30A of the camera 30 is aligned with a desired position on the wafer W in the Z direction.

The control device 38 (an example of a grooving processing control unit) controls a motor (not shown) to move (scan) the common base 34 in the X direction relative to the stage 22, and uses a laser beam to remove the low-k film along the street _LX of the wafer W to process grooves. In the example shown in Fig. 3, the stage 22 is scanned leftward in the X direction relative to the common base 34. When the laser processing of one street _LX is completed, the control device 38 controls a motor (not shown) to move the stage 22 in the Y direction relative to the common base 34, and then performs laser processing of the adjacent street _LX in a similar manner.

In this embodiment, the stage 22 is configured to be movable in the X and Y directions, and the laser irradiation unit 26 is configured to be movable in the Z direction. However, it is sufficient that the stage 22 and the laser irradiation unit 26 are capable of moving relatively in the X, Y, and Z directions. For example, the stage 22 may be configured to be movable in the X direction, and the laser irradiation unit 26 may be configured to be movable in the Y and Z directions.

Furthermore, when the laser processing of all the streets L _{and X} is completed, the control device 38 controls a motor (not shown) to rotate the stage 22 by 90 degrees, thereby rotating the wafer W by 90 degrees. Thereafter, in the same manner as in the case of the streets L and _X , the stage 22 is scanned leftward in the X direction relative to the common base 34, and the grooves C are processed along the streets L and _Y of the wafer W by the laser light.

Moreover, the control device 38 (an example of an acquisition unit) images the surface of the wafer W with the camera 30, thereby observing the streets _LX and _LY and the groove C when the groove C is processed by the laser light, and acquires positional deviation information indicating the positional deviation of the groove C with respect to the streets _LX and _LY . Furthermore, the control device 38 (an example of a storage control unit) associates the acquired positional deviation information with unique information of the wafer W in which the groove C is formed, and stores it in the database server 60.

[Overall configuration of blade dicing device]
The blade dicing apparatus 50 is an apparatus for processing a wafer W on which grooves C are formed by the laser processing apparatus 20. Fig. 4 is a schematic diagram of the blade dicing apparatus 50. As shown in Fig. 4, the blade dicing apparatus 50 includes a stage 52, a blade 54, a moving mechanism 56, and a control device 58.

Stage 52 (an example of a second stage) holds wafer W on its upper surface with the surface of wafer W facing upward in the Z direction. Stage 52 is equipped with a motor (not shown) and configured to be movable in the X direction and rotate in the XY plane (movement in the θZ direction) by a moving mechanism 56. Blade 54 is a disk-shaped member parallel to the XZ plane and equipped with an annular cutting blade (not shown) on its outer periphery. Blade 54 is supported at the center of the disk by a spindle (not shown) parallel to the Y direction. The spindle is equipped with a motor (not shown) and configured to be movable in the Y and Z directions by a moving mechanism 56. Blade 54 is equipped with a motor (not shown) connected to the spindle and supported to be rotatable in the XZ plane.

The control device 58 provides overall control of the blade dicing device 50. The blade dicing device 50 cuts the wafer W according to the control of the control device 58.

That is, the control device 58 (an example of a position information acquisition unit) acquires positional deviation information corresponding to the wafer W to be processed from the database server 60. The control device 58 controls a motor (not shown) to rotate the blade 54. The control device 58 (an example of a cutting processing control unit) controls a motor (not shown) to move the stage 52 in the X direction while adjusting the processing position based on the acquired positional deviation information, and cuts the center of the groove along the street _LX of the wafer W with the blade 54. When cutting the center of the groove along one street _LX is completed, the control device 58 controls a motor (not shown) to move the blade 54 in the Y direction, and then similarly cuts the center of the groove along the adjacent street _LX .

Furthermore, when cutting along all of the streets L and _X is completed, the control device 58 controls a motor (not shown) to rotate the stage 52 by 90°, thereby rotating the wafer W by 90°. Thereafter, similar to the case of the grooves along the streets L and _X , the stage 52 is moved in the X direction while adjusting the processing position based on the acquired positional deviation information, and the center of the grooves along the streets L and _Y of the wafer W is cut by the blade 54.

In this embodiment, the stage 52 is configured to be movable in the X direction and the θZ direction, and the blade 54 is configured to be movable in the Y direction and the Z direction, but it is sufficient if the stage 52 and the blade 54 are capable of moving relatively in the X direction, the Y direction, the Z direction, and the θZ direction. For example, the stage 52 may be configured to be movable in the X direction, the Y direction, and the θZ direction, and the blade 54 may be configured to be movable in the Z direction.

[Wafer Processing Method]
5 is a flow chart showing an example of a process of a wafer processing method. Here, the positions of all the streets L and grooves C of the wafer W are inspected in advance, and blade dicing is performed based on the information obtained by the inspection. Although a separate inspection device can be used for this inspection, in this case, in the laser processing process in the preceding laser processing device 20, the amount of deviation between the streets L and the grooves C is grasped at the same time as the laser processing, and the information on the amount of deviation of the grooves C relative to each street L is linked to the wafer W and transferred to the following blade dicing device 50. In the blade dicing device 50, the center of the groove C is processed based on the deviation information by only chip pattern recognition.

In step S1 (an example of a grooving control process, an example of an acquisition process), the laser processing device 20 performs grooving on the wafer W while simultaneously observing the position of the groove C relative to the street L and inspecting the amount of positional deviation of the groove C relative to the street L. If the laser processing device 20 determines that the amount of positional deviation between the street L and the groove C is large, it corrects the position of the groove processing relative to the adjacent street L in the next scan.

In this way, the laser processing device 20 performs inspection during laser processing. Note that "simultaneously" does not necessarily mean exactly the same timing, but rather means that the inspections are performed in parallel during one scan.

When the processing by the laser light is stopped, the processing time increases. For this reason, in this embodiment, a method is adopted in which the street L and groove C are imaged during laser processing (during the relative movement between the laser light and the wafer W) and the amount of misalignment is inspected. This method is called a scan kerf check. In this scan kerf check, the wafer W is imaged during scanning, so a light source with a large amount of light and a processing device that performs continuous image processing are required so that the street L and groove C can be recognized even with a short exposure time.

Here, the scanning speed for the groove cutting process is 600 mm/sec. Using the camera 30, the deviation in the Y direction can be suppressed to about 3 μm.

The inspection of the amount of positional deviation of the groove C may be performed for all streets L or for some of the streets L. If there is a street L on which the amount of positional deviation of the groove C has not been inspected, the amount of positional deviation of the groove C relative to that street L is generated by interpolation from the amount of positional deviation of the groove C relative to neighboring streets L.

In step S2 (an example of a storage control process), in order to transfer the positional deviation information from the laser processing device 20 to the blade dicing device 50, the positional deviation information recorded in step S1 is linked to the wafer W on which the groove C is formed and stored in the database server 60.

The wafer W in which the groove C is formed is linked to the misalignment information acquired from the wafer W using a wafer ID (an example of information unique to the wafer) engraved on the wafer W or a barcode (an example of information unique to the wafer) affixed to the frame of the wafer W as a key. FIG. 6 is a diagram showing an example of a barcode attached to a wafer W. FIG. 6 shows a wafer W with a wafer ID of #1 and a wafer W with a wafer ID of #2. As shown in FIG. 6, each wafer W has a unique barcode B attached to its backside.

The laser processing device 20 acquires the wafer ID of the wafer W on which the groove C is formed, and associates the wafer ID with the misalignment information and stores it in the database server 60.

Figure 7 is a diagram showing an example of positional deviation information stored in the database server 60. In the example shown in Figure 7, the deviation amounts of groove C with respect to streets L with street numbers 1, 2, 3, 4, ... of a wafer W with a wafer ID of #1 are -0.5 μm, +1.0 μm, +0.1 μm, +0.1 μm, ... respectively. Also, the deviation amounts of groove C with respect to streets L with street numbers 1, 2, ... of a wafer W with a wafer ID of #2 are -2.0 μm, -3.0 μm, ... respectively.

As described above, the amount of deviation of the groove C relative to the street L can be linked to the wafer ID of the wafer W on which the groove C is formed and stored in the database server 60. Here, an example is described in which the wafer ID is managed by the barcode B, but the wafer-specific information may also be managed in the order of "the wafer that was processed."

In step S3 (an example of a position information acquisition process), the blade dicing device 50 acquires the wafer ID of the wafer W to be processed and acquires position deviation information for that wafer ID from the database server 60.

In step S4 (an example of a cutting process control process), the blade dicing device 50 adjusts the cutting position based on the acquired positional deviation information with respect to the street L to be cut on the wafer W. As a result, the blade dicing device 50 cuts the center of the groove C on the wafer W without inspecting the position of the groove C on the wafer W to be processed.

Here, the street L recognized by the laser processing device 20 is linked to the street L recognized by the blade dicing device 50 by pattern matching using unique patterns such as chip edges and notches on the wafer W.

For example, when initially registering information about the wafer W in the laser processing device 20 and the blade dicing device 50, information about the location of the first street L from the unique pattern can be registered, thereby aligning the first street L between the laser processing device 20 and the blade dicing device 50. In the case of the wafer W shown in FIG. 2, it has a unique pattern P with no similar patterns in nearby areas, and by specifying the distance from the pattern P, the first street L can be commonly recognized by the laser processing device 20 and the blade dicing device 50. The unique pattern may be a feature of the outer shape of the wafer W, such as a notch or an orientation flat.

Also, the distance from the center of the wafer W to the first street L may be set in advance, and the position of the first street L may be aligned by finding the center of the wafer W using the contour measurement function.

In this way, according to the wafer processing method of this embodiment, the position of the groove C measured by the laser processing device 20 can be handed over to the blade dicing device 50, and the blade dicing device 50 can perform cutting without inspecting the position of the groove C again. As a result, high quality, high precision, and short processing time are possible throughout the entire process.

In theory, it is also possible to observe the groove C before cutting in the blade dicing device 50 to obtain positional deviation information. However, the blade dicing device 50 is subject to many disturbances due to the need to handle cutting water for cooling the blade, and is not a good environment for photographing. Therefore, the laser processing device 20 is more preferable than the blade dicing device 50 because it allows the position of the groove C to be observed in a stable environment.

In this embodiment, the objective lens 26A of the laser irradiation unit 26 and the objective lens 30A of the camera 30 are independent of each other. In addition, the laser irradiation unit Z base 28 and the camera Z base 32 are configured to allow the laser irradiation unit 26 and the camera 30 to be moved individually in the Z direction. Therefore, there are no restrictions on the wavelength of the processing light, the focal depth, the pupil diameter, the light emission during processing, the focus position during processing, etc. In addition, even when an optical system with a shallow depth of field is used, the laser irradiation unit 26 and the camera 30 can be adjusted to their respective focal points independently of each other, so that both can be focused at an appropriate height, and processing and imaging can be performed under optimal conditions.

On the other hand, since the irradiation position of the laser irradiation unit 26 and the imaging position of the camera 30 are separated, the scanning distance in the X direction is extended by the distance between them, and processing time is increased. For this reason, inspection may be performed not for grooves C on all streets L, but at any timing, such as at intervals between any street L, or before or after correction by laser processing. The timing of inspection may be configured to be set by the user. In addition, the deviation amount of grooves C that are not inspected may be interpolated using a linear or any higher-order curve, or it may not be interpolated.

In addition, the Z base of the laser irradiation unit 26 and the camera 30 may be shared, and the laser irradiation unit 26 and the camera 30 may be configured to be movable simultaneously in the Z direction.

Furthermore, instead of the database server 60, a portable storage medium such as a USB (Universal Serial Bus) memory may be used. In this case, the laser processing device 20 and the blade dicing device 50 are each configured to be able to access data from the portable storage medium.

Second Embodiment
8 is a schematic diagram of a laser processing apparatus 70 according to a second embodiment. The same reference numerals are used for parts common to the laser processing apparatus 20, and detailed description thereof will be omitted. As shown in FIG. 8, the laser processing apparatus 20 includes a laser irradiation unit 72, a dichroic mirror 74, and a common Z base 76.

The laser irradiation unit 72 includes an objective lens 72A. The dichroic mirror 74 is disposed in the optical path of the laser light from the laser light source 24 to the objective lens 72A. The common Z base 76 holds the laser irradiation unit 72 with the objective lens 72A of the laser irradiation unit 72 facing downward in the Z direction.

The laser light emitted from the laser light source 24 passes through the dichroic mirror 74 and enters the objective lens 72A of the laser irradiation unit 72. The objective lens 72A focuses the incident laser light at the focal position of the wafer W.

The common Z base 76 also holds the camera 30. The camera 30 includes an observation light source 30B, a half mirror 30C, and an image sensor 30D. The observation light emitted from the observation light source 30B is reflected by the half mirror 30C and the dichroic mirror 74, and enters the objective lens 72A. The objective lens 72A directs the incident observation light to the focal position of the wafer W.

Of the observation light incident on the wafer W, a portion of the light reflected by the wafer W enters the objective lens 72A as subject light. The subject light that enters the objective lens 72A is reflected by the dichroic mirror 74 and enters the camera 30, and then passes through the half mirror 30C and enters the image sensor 30D. The image sensor 30D receives the incident subject light and captures an image of the subject.

In this way, the camera 30 captures an image of the surface of the wafer W on which the groove C is formed through the objective lens 72A of the laser irradiation unit 72. Because a single objective lens 72A is used, the entire optical system can be made compact. In addition, the common Z base 76 allows the focus of the processing light and the focus of the observation light to be adjusted simultaneously. Furthermore, the scanning distance during processing can be shortened. Note that an optical system may be added to allow the focus of the processing light and the focus of the observation light to be adjusted independently of each other.

The single objective lens 72A has lower contrast and resolution than the dedicated objective lens 30A (see FIG. 3) of the camera 30. Specifically, the objective lens 72A has a numerical aperture NA of about 0.15 and a resolution of about 1.7 μm when the wavelength of the observation light is 430 nm.

＜Other＞
With the laser processing apparatus 20 and the laser processing apparatus 70, it is also possible to use the deviation amount of the groove C as feedback, such as by adjusting the Y-direction position (active Y) or adjusting the angle (active θ) during processing in real time in a direction that cancels out the deviation amount of the groove C shown in Figure 7.

If the amount of positional deviation at a certain Y coordinate and a certain X-direction speed is reproducible, once the amount of positional deviation is observed under those conditions and stored, there is no need to inspect in real time when machining under the same conditions thereafter. However, if there is a disturbance such as a change in water temperature or air temperature, it is effective to measure and correct in real time. The advantages of not inspecting in real time include the fact that sampling can be done frequently because the inspection interval does not affect the machining speed, and that since the processing time does not affect the machining speed, there is a margin of processing capacity, so problems do not occur even with equipment with low processing capacity.

The amount of debris generated can also be observed with the camera 30, and the soundness of the nozzle can be inspected based on the amount of debris generated.

If the grooves C for all the streets L of the wafer W can be observed without gaps, then a visual inspection of the grooves C of all chips can be performed within the laser processing device 20 (70), making it possible to identify defective chips with processing defects or omissions in advance. In addition, by measuring the changes in the distortion, it is possible to predict failures and determine the timing of maintenance of the laser processing device 20 (70).

The technical scope of the present invention is not limited to the scope described in the above embodiments. The configurations of each embodiment can be appropriately combined with each other without departing from the spirit of the present invention.

10...wafer processing system 20...laser processing device 22...stage 24...laser light source 26...laser irradiation unit 26A...objective lens 28...Z base for laser irradiation unit 30...camera 30A...objective lens 32...Z base for camera 34...common base 36...movement mechanism 38...control device 50...blade dicing device 52...stage 54...blade 56...movement mechanism 58...control device 60...database server 70...laser processing device 72...laser irradiation unit 72A...objective lens 74...dichroic mirror 76...common Z base B...barcode C...groove L, _Lx , _Ly ...street P...pattern W...wafer S1 to S4...each step of wafer processing method

Claims (5)

A wafer processing system including a laser processing device, a blade dicing device, and a storage unit,
The laser processing apparatus includes:
a first stage for holding a wafer having dividing lines formed on its surface;
a laser irradiation unit that irradiates a surface of the wafer with laser light;
a grooving control unit that processes grooves along the planned dividing lines of the wafer by the laser light by moving the first stage and the laser irradiation unit relatively;
an acquisition unit that acquires misalignment information indicating a misalignment of the grooves with respect to the planned dividing lines by capturing an image of a surface of the wafer with an imaging unit;
a memory control unit that associates the positional deviation information with unique information of the wafer and stores the information in the memory unit;
Equipped with
The blade dicing device processes the wafer on which the grooves are formed by the laser processing device,
The blade dicing device includes:
a position information acquiring unit that acquires the position deviation information corresponding to the wafer from the storage unit;
a second stage for holding the wafer;
a blade for cutting the wafer;
a cutting processing control unit that cuts the wafer along the groove with the blade by relatively moving the second stage and the blade based on the acquired positional deviation information;
Equipped with
The imaging unit is disposed downstream of the laser irradiation unit in a relative movement direction of the first stage and the laser irradiation unit . the laser irradiation unit has an objective lens that focuses the laser light,
The wafer processing system according to claim 1 , wherein the imaging unit images the surface of the wafer through the objective lens. 3. The wafer processing system according to claim 1, wherein the laser irradiation unit and the imaging unit are capable of adjusting the focus independently of each other. The wafer processing system according to claim 1 , wherein the acquisition unit acquires the positional deviation information simultaneously with processing the groove. a grooving control step of machining grooves along the planned dividing lines of the wafer by relatively moving a first stage that holds a wafer having dividing lines formed on its surface and a laser irradiation unit that irradiates a laser beam onto the surface of the wafer;
an acquiring step of acquiring positional deviation information indicating a positional deviation of the groove with respect to the planned dividing line by capturing an image of a surface of the wafer by an imaging unit disposed downstream of the laser irradiation unit with respect to a relative moving direction of the first stage and the laser irradiation unit;
a storage control step of storing the positional deviation information in a storage unit in association with information unique to the wafer;
a position information acquiring step of acquiring, from the storage unit, the position deviation information associated with unique information of the wafer on which the groove is formed;
a cutting processing control step of cutting the wafer on which the groove is formed along the groove by relatively moving a second stage that holds the wafer on which the groove is formed and a blade that cuts the wafer on which the groove is formed based on the acquired positional deviation information; and
A wafer processing method comprising:

Images