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JP7174159B2 - ceramic heater with shaft - Google Patents

ceramic heater with shaft Download PDF

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JP7174159B2
JP7174159B2 JP2021532730A JP2021532730A JP7174159B2 JP 7174159 B2 JP7174159 B2 JP 7174159B2 JP 2021532730 A JP2021532730 A JP 2021532730A JP 2021532730 A JP2021532730 A JP 2021532730A JP 7174159 B2 JP7174159 B2 JP 7174159B2
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ceramic
shaft
resistance heating
heating element
ceramic heater
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JPWO2021010063A1 (en
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達也 久野
央史 竹林
賢一郎 相川
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NGK Insulators Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/016—Heaters using particular connecting means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)

Description

本発明は、シャフト付きセラミックヒータに関する。 The present invention relates to a ceramic heater with a shaft.

従来、半導体ウエハの搬送、露光、ＣＶＤなどの成膜プロセスや、洗浄、エッチング、ダイシングなどの微細加工においては、ウエハを保持するシャフト付きセラミックヒータが使用される。こうしたシャフト付きセラミックヒータとして、特許文献１に示すように、抵抗発熱体が埋設されたセラミックプレートと、セラミックプレートのウエハ載置面とは反対側の面に接合された中空のセラミックシャフトと、セラミックシャフトの内周壁面を上下方向に延在するように形成された導電膜と、抵抗発熱体と導電膜とを電気的に接続するワイヤとを備えたものが開示されている（図５参照）。 2. Description of the Related Art Conventionally, a shaft-equipped ceramic heater for holding a wafer is used in transport of a semiconductor wafer, exposure, film formation processes such as CVD, and fine processing such as cleaning, etching, and dicing. As shown in Patent Document 1, such a shaft-equipped ceramic heater includes a ceramic plate in which a resistance heating element is embedded, a hollow ceramic shaft bonded to the surface of the ceramic plate opposite to the wafer mounting surface, and a ceramic heater. It has a conductive film formed so as to extend vertically on the inner peripheral wall surface of the shaft, and a wire electrically connecting the resistive heating element and the conductive film is disclosed (see FIG. 5). .

特開２０１７－１６２８７８号公報JP 2017-162878 A

しかしながら、導電膜をセラミックシャフトの内周壁面に形成する際に、隣合う導電膜が繋がってしまうおそれがあった。 However, when the conductive film is formed on the inner peripheral wall surface of the ceramic shaft, there is a risk that adjacent conductive films will be connected.

本発明はこのような課題を解決するためになされたものであり、隣合う導電膜を繋がりにくくすることを主目的とする。 The present invention has been made to solve such problems, and its main object is to make it difficult to connect adjacent conductive films.

本発明のシャフト付きセラミックヒータは、
抵抗発熱体が埋設されたセラミックプレートと、
前記セラミックプレートのウエハ載置面とは反対側の面に接合された中空のセラミックシャフトと、
前記セラミックシャフトの内周面に軸方向に沿うように設けられた複数の縦溝と、
前記複数の縦溝内に形成された導電膜と、
前記抵抗発熱体の端子と前記導電膜とを電気的に接続する接続部材と、
を備えたものである。The ceramic heater with a shaft of the present invention is
a ceramic plate in which a resistance heating element is embedded;
a hollow ceramic shaft joined to the surface of the ceramic plate opposite to the wafer mounting surface;
a plurality of vertical grooves provided along the axial direction on the inner peripheral surface of the ceramic shaft;
a conductive film formed in the plurality of longitudinal grooves;
a connection member that electrically connects the terminals of the resistance heating element and the conductive film;
is provided.

このシャフト付きセラミックヒータでは、導電膜はセラミックシャフトの内周面に軸方向に沿うように設けられた縦溝内に形成されている。そのため、隣合う導電膜は、セラミックシャフトのうち縦溝と縦溝との境界部分によって隔てられている。したがって、隣合う導電膜はこうした境界部分の存在によって繋がりにくくなっている。 In this shaft-equipped ceramic heater, the conductive film is formed in a vertical groove provided along the axial direction on the inner peripheral surface of the ceramic shaft. Therefore, the adjacent conductive films are separated from each other by the boundary portions between the longitudinal grooves of the ceramic shaft. Therefore, adjacent conductive films are difficult to connect due to the existence of such a boundary portion.

本発明のシャフト付きセラミックヒータにおいて、前記抵抗発熱体は、前記セラミックプレートの複数のゾーンのそれぞれに設けられており、前記端子は、前記抵抗発熱体ごとに２つずつ独立して設けられ、前記導電膜は、前記抵抗発熱体ごとに２つずつ独立して設けられていてもよい。抵抗発熱体に給電するためのロッドをセラミックシャフトの内部空間に配置する場合には、ロッドの本数が制限され、それに伴い抵抗発熱体の数も制限されるが、ここではロッドの代わりに導電膜を用いているため、より多くの抵抗発熱体に対応可能である。 In the shaft-equipped ceramic heater of the present invention, the resistance heating element is provided in each of a plurality of zones of the ceramic plate, the terminals are independently provided two by one for each of the resistance heating elements, and Two conductive films may be provided independently for each of the resistance heating elements. When rods for supplying power to the resistance heating elements are arranged in the internal space of the ceramic shaft, the number of rods is limited, and accordingly the number of resistance heating elements is also limited. is used, it is possible to correspond to more resistance heating elements.

本発明のシャフト付きセラミックヒータにおいて、前記導電膜及び前記接続部材は、絶縁膜に覆われていてもよい。こうすれば、導電膜や接続部材が他の金属部材などと接触して短絡してしまうのを防止することができる。こうした絶縁膜は、エアロゾルデポジション（ＡＤ）膜又は溶射膜であることが好ましい。 In the ceramic heater with shaft of the present invention, the conductive film and the connecting member may be covered with an insulating film. By doing so, it is possible to prevent the conductive film and the connecting member from contacting other metal members and causing a short circuit. Such insulating films are preferably aerosol deposition (AD) films or thermally sprayed films.

本実施形態のシャフト付きセラミックヒータの縦断面図。FIG. 2 is a longitudinal sectional view of the ceramic heater with a shaft according to the present embodiment; 図１の部分拡大図。FIG. 2 is a partially enlarged view of FIG. 1; シャフト付きセラミックヒータの底面図。The bottom view of the ceramic heater with a shaft. 別の実施形態の部分拡大図。Partially enlarged view of another embodiment. 従来のシャフト付きセラミックヒータの縦断面図。FIG. 2 is a vertical cross-sectional view of a conventional ceramic heater with a shaft;

本発明の好適な実施形態を、図面を参照しながら以下に説明する。図１は本実施形態のシャフト付きセラミックヒータの縦断面図である。 Preferred embodiments of the invention are described below with reference to the drawings. FIG. 1 is a longitudinal sectional view of a ceramic heater with a shaft according to this embodiment.

シャフト付きセラミックヒータは、図１に示すように、セラミックプレートと、セラミックシャフトと、縦溝と、導電膜と、凹部（図２参照）と、接続部材とを備えている。セラミックプレートには、ＲＦ電極及び抵抗発熱体が埋設されている。ＲＦ電極は、プラズマを発生させる際に高周波電圧が印加される電極である。ＲＦ給電ロッドは、セラミックシャフトの内部空間に収容され、セラミックプレートのウエハ載置面とは反対側の面からＲＦ電極に接合されている。抵抗発熱体は、通電されるとセラミックプレートを加熱する。本実施形態では、抵抗発熱体は、セラミックプレートの複数（３つ）のゾーンのそれぞれに設けられている。端子は、抵抗発熱体ごとに２つずつ独立して設けられている。セラミックシャフトは、セラミックプレートのウエハ載置面とは反対側の面にダイレクトボンディングにより接合された中空シャフトである。縦溝は、セラミックシャフトの内周面に軸方向に沿うように設けられた凹溝である。本実施形態では、等間隔に６本の縦溝が設けられている（図３参照）。導電膜は、セラミックシャフトの縦溝内を伝うように軸方向（上下方向）に沿って設けられている。導電膜は、印刷やめっきなどで形成してもよいし、ＡＤ法、溶射法、ＣＶＤ法、ＰＶＤ法などで成膜してもよい。導電膜は、抵抗発熱体ごとに２つずつ設けられている。凹部は、セラミックプレートのウエハ載置面とは反対側の面から抵抗発熱体の端子に達するように設けられたＵ字溝である（図３参照）。凹部の底面には、端子の下面が露出している。凹部の側面には、導電膜の表面が露出している。接続部材は、凹部に充填され、抵抗発熱体の端子の下面と導電膜の表面とを電気的に接続している。接続部材は、凹部に配置したロウ材を溶融したあと固化したものである。 A ceramic heater with a shaft, as shown in FIG. 1, includes a ceramic plate, a ceramic shaft, a vertical groove, a conductive film, a recess (see FIG. 2), and a connecting member. An RF electrode and a resistance heating element are embedded in the ceramic plate. The RF electrode is an electrode to which a high frequency voltage is applied when plasma is generated. The RF power supply rod is accommodated in the inner space of the ceramic shaft and joined to the RF electrode from the surface of the ceramic plate opposite to the wafer mounting surface. The resistive heating element heats the ceramic plate when energized. In this embodiment, a resistive heating element is provided in each of multiple (three) zones of the ceramic plate. Two terminals are provided independently for each resistance heating element. The ceramic shaft is a hollow shaft bonded by direct bonding to the surface of the ceramic plate opposite to the wafer mounting surface. The longitudinal groove is a concave groove provided along the inner peripheral surface of the ceramic shaft in the axial direction. In this embodiment, six vertical grooves are provided at regular intervals (see FIG. 3). The conductive film is provided along the axial direction (vertical direction) so as to extend along the longitudinal groove of the ceramic shaft. The conductive film may be formed by printing, plating, or the like, or may be formed by an AD method, a thermal spraying method, a CVD method, a PVD method, or the like. Two conductive films are provided for each resistance heating element. The concave portion is a U-shaped groove provided so as to reach the terminal of the resistance heating element from the surface of the ceramic plate opposite to the wafer mounting surface (see FIG. 3). The bottom surface of the terminal is exposed on the bottom surface of the recess. The surface of the conductive film is exposed on the side surface of the recess. The connection member is filled in the recess and electrically connects the lower surface of the terminal of the resistance heating element and the surface of the conductive film. The connecting member is obtained by melting and then solidifying the brazing material placed in the recess.

以上説明した本実施形態のシャフト付きセラミックヒータでは、導電膜はセラミックシャフトの内周面に軸方向に沿うように設けられた縦溝内に形成されている。そのため、隣合う導電膜は、セラミックシャフトのうち縦溝と縦溝との境界部分によって隔てられている。したがって、隣合う導電膜はこうした境界部分の存在によって繋がりにくくなっている。 In the shaft-equipped ceramic heater of the present embodiment described above, the conductive film is formed in the vertical groove provided along the axial direction on the inner peripheral surface of the ceramic shaft. Therefore, the adjacent conductive films are separated from each other by the boundary portions between the longitudinal grooves of the ceramic shaft. Therefore, adjacent conductive films are difficult to connect due to the existence of such a boundary portion.

また、抵抗発熱体に給電するためのロッドをセラミックシャフトの内部空間に配置する場合には、ロッドの本数が制限され、それに伴い抵抗発熱体の数も制限されるが、ここではロッドの代わりに導電膜を用いているため、より多くの抵抗発熱体に対応可能である。 In addition, when rods for supplying power to the resistance heating elements are arranged in the internal space of the ceramic shaft, the number of rods is limited, and accordingly the number of resistance heating elements is also limited. Since a conductive film is used, it can be used with a larger number of resistance heating elements.

上述した実施形態において、図４に示すように、導電膜及び接続部材の表面を、絶縁膜で覆うようにしてもよい。こうすれば、導電膜や接続部材が他の金属部材などと接触して短絡してしまうのを防止することができる。絶縁膜は、エアロゾルデポジション（ＡＤ）膜又は溶射膜であることが好ましい。特に、ＡＤ法（プラズマＡＤ法を含む）は、微細なセラミック粒子の薄い膜を精度よく形成するのに適している。また、ＡＤ法は、衝撃固化現象でセラミック粒子を成膜することができるため、セラミック粒子を高温で焼結する必要がない。 In the above-described embodiment, as shown in FIG. 4, the surfaces of the conductive film and the connection member may be covered with an insulating film. By doing so, it is possible to prevent the conductive film and the connecting member from contacting other metal members and causing a short circuit. The insulating film is preferably an aerosol deposition (AD) film or a sprayed film. In particular, the AD method (including the plasma AD method) is suitable for precisely forming a thin film of fine ceramic particles. Moreover, since the AD method can form a film of ceramic particles by the impact solidification phenomenon, it is not necessary to sinter the ceramic particles at a high temperature.

上述した実施形態において、セラミックプレートには、静電電極が埋設されていてもよい。 In the above-described embodiments, the ceramic plate may have embedded electrostatic electrodes.

本出願は、２０１９年７月１６日に出願された日本国特許出願第２０１９－１３０９０６号を優先権主張の基礎としており、引用によりその内容の全てが本明細書に含まれる。 This application claims priority from Japanese Patent Application No. 2019-130906 filed on July 16, 2019, the entire contents of which are incorporated herein by reference.

本発明は、例えば半導体ウエハの搬送、露光、ＣＶＤなどの成膜プロセスや、洗浄、エッチング、ダイシングなどの微細加工に利用可能である。 INDUSTRIAL APPLICABILITY The present invention can be used, for example, for transfer of semiconductor wafers, exposure, film formation processes such as CVD, and fine processing such as cleaning, etching, and dicing.

Claims (4)

抵抗発熱体が埋設されたセラミックプレートと、
前記セラミックプレートのウエハ載置面とは反対側の面に接合された中空のセラミックシャフトと、
前記セラミックシャフトの内周面に軸方向に沿うように設けられた複数の縦溝と、
前記縦溝内に設けられた導電膜と、
前記抵抗発熱体の端子と前記導電膜とを電気的に接続する接続部材と、
を備えたシャフト付きセラミックヒータ。a ceramic plate in which a resistance heating element is embedded;
a hollow ceramic shaft joined to the surface of the ceramic plate opposite to the wafer mounting surface;
a plurality of vertical grooves provided along the axial direction on the inner peripheral surface of the ceramic shaft;
a conductive film provided in the longitudinal groove;
a connection member that electrically connects the terminals of the resistance heating element and the conductive film;
A ceramic heater with a shaft. 前記抵抗発熱体は、前記セラミックプレートの複数のゾーンのそれぞれに設けられており、
前記端子は、前記抵抗発熱体ごとに２つずつ独立して設けられ、
前記導電膜は、前記抵抗発熱体ごとに２つずつ独立して設けられている、
請求項１に記載のシャフト付きセラミックヒータ。The resistance heating element is provided in each of the plurality of zones of the ceramic plate,
The terminals are provided two by two independently for each of the resistance heating elements,
Two conductive films are provided independently for each resistance heating element,
The ceramic heater with a shaft according to claim 1. 前記導電膜及び前記接続部材は、絶縁膜に覆われている、
請求項１又は２に記載のシャフト付きセラミックヒータ。The conductive film and the connecting member are covered with an insulating film,
A ceramic heater with a shaft according to claim 1 or 2. 前記絶縁膜は、エアロゾルデポジション膜又は溶射膜である、
請求項３に記載のシャフト付きセラミックヒータ。The insulating film is an aerosol deposition film or a thermal spray film,
A ceramic heater with a shaft according to claim 3.
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