JP6564851B2 - 短パルス幅刺激 - Google Patents
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- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
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- A—HUMAN NECESSITIES
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- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
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- A—HUMAN NECESSITIES
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- A—HUMAN NECESSITIES
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Description
本出願は、2014年9月23日出願の米国仮特許出願第62/054,110号の「35 U.S.C.§119(e)」の下での優先権の利益を主張し、引用によってその全体を本明細書に組込む。
脊髄の領域内の神経組織は、異なる特性を有する。例えば、後柱(DC)線維(主に有髄軸索)は軸線方向に延び、後角(DH)線維(例えば、ニューロン細胞終端、ニューロン細胞体、樹状突起、及び軸索)は多方向に配向されている。典型的に配置される硬膜外脊髄刺激(SCS)リードから後角(DH)線維までの距離は、かかる硬膜外脊髄刺激(SCS)リードから後柱(DC)線維までの距離と異なる。更に、後角(DH)線維と後柱線維は、電気変調に対して異なる応答(例えば、活性化関数)を有する。後柱(DC)線維及び後柱(DC)ニューロンの変調(すなわち、脱分極又は過分極)の強度は、脊柱の長手方向後柱軸線に沿う電圧の2次空間微分(∂2V/∂x2)に比例するいわゆる「活性化関数」によって表される。この理由は、部分的には、後柱(DC)内の大きい有髄軸索が主に脊柱の長手方向に沿って整列しているからである。一方、後角(DH)線維及び後角ニューロン内に活動電位を発生させる可能性は、脊柱に沿う電圧の1次空間微分(∂V/∂x)に比例する活性化関数によって表され、これは、電場として既知である。かくして、後角(DH)活性化関数は、線維軸線に沿う電圧の1次微分に比例し、後柱(DC)活性化関数は、線維軸線に沿う電圧の2次微分に比例する。従って、電場中心からの距離は、後柱活性化関数(∂2V/∂x2)に及ぼす影響より小さい影響しか後角(DH)活性化関数(∂V/∂x)に及ぼさない。後柱(DC)に沿う神経変調リードによって発生させた電場の長手方向勾配を最小にすることによって、後角(DH)内のニューロン要素(例えば、ニューロン、樹状突起、軸索、細胞体、及びニューロン細胞終端)は、後柱(DC)ニューロン細胞要素よりも優先的に刺激され、それにより、感覚異常の感覚を生成することのなしに、疼痛緩和の形態で治療を行うことができる。この技術は、後角(DH)線維と後柱(DC)線維が電気変調に対して異なる応答(活性化関数)を有するという自然現象に少なくとも部分的に依存する。
知覚以下変調は、変調を送出するのに使用するための電極を選択して絞り込むための幾つかの課題をもたらすことがある。例えば、在来の脊髄刺激(SCS)は、後柱(DC)を変調させ且つ感覚異常を生じさせるために、ターゲットが定められた小さい刺激を単に提供することを試みる。在来の脊髄刺激(SCS)のための変調は、疼痛領域にわたって感覚異常のマップを形成するように調節されることがある。しかしながら、患者は、知覚以下変調のための変調エネルギの送出を知覚しない。
知覚以下変調は、患者が変調エネルギの送出を知覚しないので、変調治療を較正することについて幾つかの課題がある可能性がある。較正は、2015年9月23日に出願された特許文献1に解説されているもの等のセンサを含むのがよい。センサの例は、定量的感覚検査(QST)、脳波図(EEG)、脳皮質電図(ECoG)、拡散光撮像、機能的磁気共鳴映像法(fMRI)、軸索内の局所電場電位(LFPs)、及び軸索内の誘起複合活動電位(eCAPs)を含む。
Claims (14)
- システムであって、
神経変調を送出する際の使用のために作動可能に位置決めされるように構成された少なくとも1つのリード上の複数の電極と、
変調場を発生させるために少なくとも2つの電極を用いるように構成された神経変調器と、
発生させた変調場により知覚された又は測定可能な応答を提供するフィードバック信号を受信するように構成されたフィードバックシステムと、
制御システムと、を有し、前記制御システムは、前記神経変調器と前記フィードバックシステムに作動可能に接続された少なくとも1つのコントローラを含み、較正プロセスを実施するように構成され、
前記較正プロセスは、
前記神経変調器を制御して、第1のパルス幅を有する第1の刺激パルスを用いて変調場を発生させ、前記フィードバックシステムを用いて、前記応答を提供し且つ前記第1のパルス幅を用いて発生させた変調場の強度を表す点を、第1の基準点として決定することと、
前記神経変調器を制御して、前記第1のパルス幅と異なる第2のパルス幅を有する第2の刺激パルスを用いて変調場を発生させ、前記フィードバックシステムを用いて、前記応答を提供し且つ前記第2のパルス幅を用いて発生させた変調場の強度を表す点を、第2の基準点として決定することと、
少なくとも前記第1の基準点及び前記第2の基準点を用いて、知覚以下神経変調のための知覚以下データを導出することと、を含み、第3のパルス幅を有する第3の刺激パルスが、知覚以下神経変調を送出するのに使用され、導出される知覚以下データは、前記第3の刺激パルスに特有のものであり、前記第3のパルス幅は、前記第1のパルス幅よりも小さく且つ前記第2のパルス幅よりも小さい、システム。 - 前記フィードバックシステムは、前記神経変調器によって発生させた変調場がいつ前記応答を提供するかというユーザによる指示を受信するように構成されたユーザインタフェースを含む、請求項1に記載のシステム。
- 前記フィードバックシステムは、前記神経変調器によって発生させた前記変調場がいつ前記応答を提供するのかを検出するように構成された少なくとも1つのセンサを含む、請求項1又は2に記載のシステム。
- 更に、前記神経変調器を含む埋込み可能なデバイスと、外部デバイスと、を有し、
前記制御システムは、前記埋込み可能なデバイス内に配置され且つ前記神経変調器と作動可能に接続された埋込み可能なコントローラと、前記外部デバイス内に配置され且つ前記知覚以下データを導出するように構成された外部コントローラを含む、請求項1〜3のいずれか1項に記載のシステム。 - 前記制御システムは、前記知覚以下データを用いて決定された変調パラメータセットを用いて知覚以下神経変調を送出するために、前記神経変調器を制御するように構成され、知覚以下神経変調は、患者知覚閾値よりも低い強度レベルを有し、患者知覚閾値は、それよりも低い異常感覚を患者が感知しない境界である、請求項1〜4のいずれか1項に記載のシステム。
- 前記第1の基準点は、前記第1のパルス幅を有する前記第1の刺激パルスのための第1の基準電流振幅を含み、
前記第2の基準点は、前記第2のパルス幅を有する前記第2の刺激パルスのための第2の基準電流振幅を含み、
前記コントローラによって実施される前記較正プロセスにおいて、少なくとも前記第1の基準点及び前記第2の基準点を用いて前記知覚以下データを導出することは、
前記応答を提供するように推定された前記第3のパルス幅のための振幅を推定することを含み、前記推定された振幅は、前記第1の基準電流振幅及び前記第2の基準電流振幅を含む強度−持続時間曲線から外挿され、
更に、前記第3のパルス幅のための前記推定された振幅を用いて、前記知覚以下データを導出することを含む、請求項1〜5のいずれか1項に記載のシステム。 - 前記コントローラによって実施される前記較正プロセスにおいて、前記知覚以下データを導出することは、更に、前記応答を提供することが推定された第4のパルス幅のための振幅を推定することを含み、前記第4のパルス幅のために推定された振幅は、前記第1の基準電流振幅及び前記第2の基準電流振幅を含む前記強度−持続時間曲線から外挿され、 前記知覚以下データを導出することは、前記第3のパルス幅のために推定された振幅を用いて、前記第3のパルス幅のための第1の知覚以下データを導出することと、前記第4のパルス幅のために推定された振幅を用いて、前記第4のパルス幅のための第2の知覚以下データを導出することと、を含む、請求項6に記載のシステム。
- 前記コントローラによって実施される前記較正プロセスにおいて、前記第3のパルス幅のための振幅を推定することは、曲線当て嵌め技術を前記第1の基準電流振幅及び前記第2の基準電流振幅に適用して、電荷−持続時間曲線のための曲線パラメータを特定することと、前記第1の基準電流振幅及び前記第2の基準電流振幅と前記電荷−持続時間曲線とを用いて、前記応答を提供する前記第3のパルス幅のための振幅を推定することと、を含む、請求項6に記載のシステム。
- 前記曲線パラメータは、時値と基電流を含む、請求項8に記載のシステム。
- 前記曲線当て嵌め技術は、ラピック強度−持続時間モデル又はワイスモデル電荷−持続時間モデルを含み、前記第1及び第2の基準点は各々、パルス幅と、前記パルス幅の電流振幅を表す、請求項8又は9に記載のシステム。
- 前記コントローラによって実施される前記較正プロセスにおいて、前記第3の刺激パルスのための振幅を推定することは、更に、強度−持続時間曲線を電荷−持続時間曲線に変換することと、前記電荷−持続時間曲線を用いて、前記第3の刺激パルスのための知覚以下振幅を推定することを含む、請求項8〜10のいずれか1項に記載のシステム。
- 前記知覚以下神経変調は、後柱組織よりも後角組織又は後根組織を優先的に刺激する変調を含む、請求項1〜11のいずれか1項に記載のシステム。
- 前記応答は、患者知覚閾値を含む、請求項1〜12のいずれか1項に記載のシステム。
- 前記応答は、患者のための許容閾値を含む、請求項1〜12のいずれか1項に記載のシステム。
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| EP3197540A1 (en) | 2017-08-02 |
| CN107073265B (zh) | 2020-11-10 |
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| JP2017529172A (ja) | 2017-10-05 |
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