JP6398415B2 - 電極材料の製造方法 - Google Patents
電極材料の製造方法 Download PDFInfo
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- JP6398415B2 JP6398415B2 JP2014148427A JP2014148427A JP6398415B2 JP 6398415 B2 JP6398415 B2 JP 6398415B2 JP 2014148427 A JP2014148427 A JP 2014148427A JP 2014148427 A JP2014148427 A JP 2014148427A JP 6398415 B2 JP6398415 B2 JP 6398415B2
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- 239000007772 electrode material Substances 0.000 title claims description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000843 powder Substances 0.000 claims description 145
- 239000002245 particle Substances 0.000 claims description 85
- 239000006104 solid solution Substances 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 41
- 238000002156 mixing Methods 0.000 claims description 21
- 229910052804 chromium Inorganic materials 0.000 claims description 20
- 239000011812 mixed powder Substances 0.000 claims description 20
- 238000010298 pulverizing process Methods 0.000 claims description 19
- 238000002441 X-ray diffraction Methods 0.000 claims description 16
- 238000000465 moulding Methods 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000011651 chromium Substances 0.000 description 147
- 229910015202 MoCr Inorganic materials 0.000 description 59
- 239000010949 copper Substances 0.000 description 52
- 230000000052 comparative effect Effects 0.000 description 27
- 238000005245 sintering Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 21
- 229910052750 molybdenum Inorganic materials 0.000 description 18
- 239000000463 material Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 9
- 229910017813 Cu—Cr Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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Description
具体的な実施例を挙げて、本発明の実施形態に係る電極材料について詳細に説明する。実施例1の電極材料は、図1に示すフローチャートにしたがって作製した電極材料である。
比較例1の電極材料は、Cu粉末とCr粉末とを混合し、得られた混合粉末をプレス金型成形にて成形後に焼結したものである。
比較例2の電極材料は、Mo粉末とCr粉末の混合比が異なること以外は、実施例1の電極材料と同じ方法で作製した電極材料である。
比較例3の電極材料は、粒径が80μm以下のCr粉末(80μmの目のふるいで分級したCr粉末)を用いて作製した電極材料である。なお、Mo粉末やCu粉末は、実施例1の電極材料と同じものを用いた。
2…真空容器
3…固定電極
4…可動電極
5…絶縁筒
6…固定側端板
7…可動側端板
8…電極接点材(電極材料)
9…ベローズ
10…主シールド
Claims (1)
- 耐熱元素と粒径が45μm以下のCr粉末を混合し、加熱して得られる固溶体を粉砕して得た固溶体粉末と、Cu粉末と、を混合した混合粉末を成形して得られる成形体を焼結した電極材料の製造方法であって、
前記電極材料は、当該電極材料に対して重量比で
Cuを40〜80%、
Crを2〜30%、
耐熱元素を10〜54%、含有し、
前記耐熱元素の含有量は、重量比でCrの含有量より多く、
前記固溶体粉末は、該固溶体粉末のX線回折測定においてCr元素に対応するピークが消失している
ことを特徴とする電極材料の製造方法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014148427A JP6398415B2 (ja) | 2014-07-22 | 2014-07-22 | 電極材料の製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014148427A JP6398415B2 (ja) | 2014-07-22 | 2014-07-22 | 電極材料の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016023335A JP2016023335A (ja) | 2016-02-08 |
| JP6398415B2 true JP6398415B2 (ja) | 2018-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014148427A Active JP6398415B2 (ja) | 2014-07-22 | 2014-07-22 | 電極材料の製造方法 |
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| JP (1) | JP6398415B2 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6197917B1 (ja) * | 2016-06-08 | 2017-09-20 | 株式会社明電舎 | 電極材料の製造方法 |
| CN109290582B (zh) * | 2018-10-23 | 2022-11-29 | 陕西斯瑞新材料股份有限公司 | 一种高性能弥散强化铜铬触头材料的制备方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04334832A (ja) * | 1991-05-09 | 1992-11-20 | Meidensha Corp | 電極材料の製造方法 |
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| JP2016023335A (ja) | 2016-02-08 |
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