JP6352743B2 - Charge processing apparatus and charge processing method - Google Patents

Description

  The present invention relates to a charging processing apparatus and a charging processing method for charging a processing object to a desired potential.

  2. Description of the Related Art As a charging processing apparatus, an apparatus including an energy ray source that emits an energy beam having a predetermined wavelength and a photoelectron emitter that emits photoelectrons to the outside when the energy beam having a predetermined wavelength is incident is known (for example, Patent Literature 1). The charging device described in Patent Document 1 charges a processing object to a desired potential by photoelectrons emitted from a photoelectron emitter.

Japanese Patent Laid-Open No. 4-28941 (Japanese Patent No. 2977098)

  As a result of research, the present inventors have newly found the following facts. In a charging apparatus that charges a processing object to a desired potential by photoelectrons emitted from the photoelectron emitter, when the processing object is an electrical insulator, the effect of being able to be charged to the desired potential is poor. In particular, when the object to be treated is an electrical insulator charged to a negative potential, the above-described charging treatment apparatus has an extremely low effect of neutralizing the charged charge, that is, eliminating the charge.

  An object of the present invention is to provide a charging processing apparatus and a charging processing method that are extremely effective in charging a processing object to a desired potential.

  One aspect of the present invention is a charging processing apparatus that charges a processing object to a desired potential, and includes an electron source unit that houses an electron generation source that generates electrons, a charged particle that communicates with the electron source unit. Arranged between the electron source section and the processing section so as to partition the electron source section and the processing section, and a housing section having a processing section that surrounds the processing object under a predetermined pressure atmosphere containing the forming gas And an electric field that accelerates electrons generated in the electron generation source toward the electrode unit, and the potentials of the processing unit and the electrode unit are A desired potential is set.

  In one embodiment of the present invention, an acceleration electric field for accelerating electrons generated in the electron generation source toward the electrode unit is formed in the electron source unit. It passes through the electrode part and is efficiently introduced into the processing part. The electrons introduced into the processing unit excite the molecules of the charged particle forming gas in the processing unit to generate positive and negative charged particles. Either one of the generated positive and negative charged particles moves to the processing object side according to the electric field formed by the potential of the processing object and the potential of the processing part (desired potential). . One of the generated positive and negative charged particles moves to the processing unit side. Due to the charged particles that have moved to the processing object, the processing object is charged to a desired potential. When the processing object is charged to a desired potential, an electric field is not formed between the processing object and the processing unit, and the charged particles do not move. Therefore, the object to be processed is reliably charged to a desired potential.

  Charging to a desired potential includes not only charging to a positive or negative potential, but also so-called neutralization that neutralizes charging of a positive or negative potential.

  The electron source part may include an opening that communicates with the processing part, and the electrode part may be disposed in the electron source part so as to cover the opening. In this case, the electrode unit that suppresses the mutual influence of the acceleration electric field formed in the electron source unit and the electric field formed in the processing unit is reliably and easily disposed between the electron source unit and the processing unit. be able to.

  The processing unit may include an opening at a position facing at least the electron source unit, and the electrode unit may be disposed in the processing unit so as to cover the opening. Also in this case, an electrode part that suppresses the mutual influence of the accelerating electric field formed in the electron source part and the electric field formed in the processing part can be reliably and easily provided between the electron source part and the processing part. Can be arranged.

  The housing part may further include an exhaust part for bringing the inside of the processing part into a predetermined pressure atmosphere containing a charged particle forming gas. In this case, pressure adjustment in the processing unit can be easily performed so that electrons and charged particles function effectively.

  The electron source unit has a longitudinal direction and a short direction in plan view, and the electron generation source may extend along the longitudinal direction of the electron source unit. In this case, even if the processing object is a long object, the processing object can be reliably charged to a desired potential.

  The processing unit may include an introduction unit that introduces the processing object into the processing unit, and a derivation unit that is positioned to face the introduction unit and derives the processing object from the processing unit. In this case, the charging process of the processing object can be performed continuously.

  The processing unit may include two members spaced apart from each other, and may position the processing object between the two members to surround the processing object with the two members. In this case, the charging process of the processing object having a larger size can be continuously performed.

  The two members may be flat electrodes positioned so as to face each other. In this case, an appropriate processing space can be formed corresponding to the size of the processing object.

  The flat electrode may be movable. In this case, other processing (for example, charged particle processing) can be performed in addition to the charging processing.

  The electron source may include a cathode that emits thermal electrons. In this case, a high-output electron generation source can be easily realized.

  The cathode may include a base material portion made of a material containing iridium and a covering portion made of a material containing yttrium oxide that covers the surface of the base material portion. In this case, an electron source with high output and high stability can be easily realized.

  The electron generation source may include an energy beam source that emits an energy beam having a predetermined wavelength, and a photoelectron emitter that emits photoelectrons to the outside when the energy beam having a predetermined wavelength is incident. In this case, an electron generation source having high stability with respect to the atmosphere in the casing can be realized.

  The energy beam source may be arranged so that the photoelectron incident axis from the electron generating source to the processing unit and the energy beam emitting axis of the energy beam source are not coaxial. In this case, it is possible to suppress the energy rays from directly affecting the object to be processed.

  The energy beam source may be arranged such that the photoelectron incident axis and the energy beam output axis intersect, and the photoelectron emitter may include an inclined surface that is inclined with respect to the energy beam output axis. In this case, the direct influence of the energy beam on the object to be processed can be further suppressed. In addition, photoelectrons generated efficiently can be guided to the processing chamber.

  The energy beam having a predetermined wavelength may include vacuum ultraviolet light. In this case, photoelectrons can be generated more efficiently.

  The electron source unit may further include a mesh-like electrode unit that is disposed between the energy beam source and the photoelectron emitter and has a potential equal to the potential of the photoelectron emitter. In this case, it is possible to suppress the photoelectrons emitted from the photoelectron emitter from moving toward the energy beam source, and efficiently guide the photoelectrons toward the processing unit.

  The electron source unit further includes a window material that is disposed between the energy beam source and the photoelectron emitter and transmits energy beams of a predetermined wavelength. The window material accommodates the photoelectron emitter in the electron generation source. The space formed may be hermetically sealed. In this case, the work related to the energy beam source can be easily performed without affecting the predetermined pressure atmosphere in the processing unit.

  The electron source portion further includes a window material that transmits energy rays of a predetermined wavelength, and a thin film having conductivity is formed on one surface of the window material, and a conductive thin film is formed. The material may be disposed between the energy beam source and the photoelectron emitter so that the thin film and the photoelectron emitter have the same potential. In this case, since photoelectrons are also emitted from the thin film, the amount of photoelectrons guided to the processing unit increases. Further, it is possible to suppress the photoelectrons emitted from the photoelectron emitter from moving toward the energy beam source side, and efficiently guide the photoelectrons toward the processing unit. As a result, the effect of the charging process can be enhanced.

  The photoelectron emitter may have a body shape and a bottom portion, and may have a bottomed cylindrical shape in which an opening for introducing an energy beam having a predetermined wavelength is formed. In this case, emission of photoelectrons from the photoelectron emitter and movement of the emitted photoelectrons to the processing unit side are efficiently performed.

  You may further provide the photoelectron control part for controlling a photoelectron arrange | positioned between a photoelectron emitter and an electrode part. In this case, for example, the incident range of photoelectrons in the processing unit can be controlled.

  The energy beam source and the photoelectron emitter may be arranged so as to be separated from each other and face each other. In this case, the energy beam source and the photoelectron emitter can be disposed at a functionally preferable position.

  Another aspect of the present invention is a charging processing apparatus that charges a processing target to a desired potential, and the processing target is in a predetermined pressure atmosphere including an electron generation source that generates electrons and a charged particle forming gas. An electron generation system comprising: a processing unit that surrounds an object and into which electrons generated from an electron generation source are introduced; and a mesh electrode unit disposed between the electron generation source and the processing unit. An acceleration electric field for accelerating electrons generated in the electron generation source toward the electrode unit is formed between the source and the electrode unit, and the potentials of the processing unit and the electrode unit are set to desired potentials.

  Another aspect of the present invention is a charging method for charging an object to be processed to a desired potential, the object being processed under a predetermined pressure atmosphere containing an electron generation source for generating electrons and a charged particle forming gas. Electron generation using a processing unit that surrounds an object and into which electrons generated from an electron generation source are introduced, and a mesh-like electrode unit disposed between the electron generation source and the processing unit An acceleration electric field for accelerating electrons generated from the electron generation source toward the electrode unit is formed between the source and the electrode unit, and the potentials of the processing unit and the electrode unit are set to desired potentials.

  In another aspect of the present invention, since an accelerating electric field for accelerating the electrons generated in the electron generation source toward the electrode portion is formed, the electrons generated in the electron generation source Is efficiently introduced into the processing unit. The electrons introduced into the processing unit excite the molecules of the charged particle forming gas in the processing unit to generate positive and negative charged particles. Either one of the generated positive and negative charged particles moves to the processing object side according to the electric field formed by the potential of the processing object and the potential of the processing part (desired potential). . One of the generated positive and negative charged particles moves to the processing unit side. Due to the charged particles that have moved to the processing object, the processing object is charged to a desired potential. When the processing object is charged to a desired potential, an electric field is not formed between the processing object and the processing unit, and the charged particles do not move. Therefore, the object to be processed is reliably charged to a desired potential.

  According to the present invention, it is possible to provide a charging processing apparatus and a charging processing method that are extremely effective in charging a processing object to a desired potential.

1 is a perspective view showing a charging processing apparatus according to a first embodiment. It is a perspective view which shows an example of an electron source part. It is a perspective view which shows an example of a process chamber part. It is a figure for demonstrating the charging process in the charging processing apparatus which concerns on 1st Embodiment. It is a figure for demonstrating the charging process in the charging processing apparatus which concerns on 1st Embodiment. It is a figure for demonstrating the charging process in the charging processing apparatus which concerns on 1st Embodiment. It is a figure for demonstrating the charging process in the charging processing apparatus which concerns on 1st Embodiment. It is a perspective view which shows the charging processing apparatus which concerns on the modification of 1st Embodiment. It is a perspective view which shows the charging processing apparatus which concerns on the modification of 1st Embodiment. It is sectional drawing which shows the modification of an electron source part. It is a perspective view which shows the electrification processing apparatus which concerns on 2nd Embodiment. It is sectional drawing which shows an example of an electron source part. It is a top view which shows the modification of an electron source part. It is sectional drawing along the XIV-XIV line | wire in FIG. It is sectional drawing along the XV-XV line | wire in FIG. It is sectional drawing which shows the further modification of an electron source part. It is sectional drawing which shows the further modification of an electron source part. It is sectional drawing which shows the further modification of an electron source part. It is sectional drawing which shows the further modification of an electron source part. It is a perspective view which shows the further modification of an electron source part. It is a perspective view which shows the further modification of an electron source part. It is sectional drawing of the electron source part shown by FIG. It is a perspective view which shows a photoelectron emitter. It is a figure for demonstrating discharge | release of the photoelectron from an electron source part. It is a perspective view which shows the modification of a photoelectron emitter. It is a figure for demonstrating discharge | release of the photoelectron from an electron source part. It is a perspective view which shows the electrification processing apparatus with which the further modification of the electron source part was applied. It is a perspective view which shows the static elimination processing apparatus which concerns on 4th Embodiment. It is a perspective view which shows an example of an electron source part. It is a perspective view which shows the electrification processing apparatus which concerns on 5th Embodiment. It is a perspective view which shows the electrification processing apparatus which concerns on 6th Embodiment. It is a perspective view which shows the electrification processing apparatus which concerns on 7th Embodiment. It is a figure for demonstrating the example of application of a charging processing apparatus. It is a figure for demonstrating the example of application of a charging processing apparatus. It is a figure for demonstrating the example of application of a charging processing apparatus. It is a perspective view which shows an electrification processing unit.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

(First embodiment)
With reference to FIGS. 1-3, the structure of the electrical charging apparatus C1 which concerns on 1st Embodiment is demonstrated. FIG. 1 is a perspective view showing a charging apparatus according to the first embodiment. FIG. 2 is a perspective view showing an example of the electron source section. FIG. 3 is a perspective view showing an example of the processing chamber.

  As shown in FIG. 1, the charging processing device C <b> 1 includes a housing unit 1 and an electrode unit 40. The charging processing device C1 is a device that charges the processing object PO to a desired potential. For example, the charging processing device C1 can charge an uncharged processing object PO to a positive or negative potential. The electrification processing device C1 can, for example, neutralize the processing object PO charged to a positive or negative potential or change it to a desired potential.

  The housing unit 1 includes an electron source unit 3, a processing unit 20, an air supply unit 30, and an exhaust unit 33. The housing unit 1 further includes a processing housing 2 that houses the processing unit 20. The electron source section 3 is provided in the processing casing 2 so that the casing section 1 is hermetically sealed. The electron source unit 3 may be provided integrally with the processing housing 2 or may be provided separately from the processing housing 2. The electron source unit 3 is disposed outside the processing unit 20. The processing housing 2 and the processing unit 20 are made of, for example, a conductive metal material having a rectangular parallelepiped shape (for example, stainless steel or aluminum). When the processing unit 20 is made of a conductive metal material, the processing housing 2 may be made of an insulating material.

  As shown in FIG. 2, the electron source unit 3 includes an electron generation source 5 that generates electrons and an electron source housing 7 that houses the electron generation source 5. The electron generation source 5 includes a cathode 6 that emits thermal electrons. The cathode 6 emits thermoelectrons when heated. The cathode 6 is a direct heating type electrode such as a filament, for example. Specifically, the filament includes a conductive member 6a (base material portion) made of a material containing iridium, and a coating layer 6b (covering portion) made of a material containing yttrium oxide and covering the surface of the conductive member 6a. It is preferable that these are included. Iridium is chemically stable and hardly reacts with oxygen gas. Yttrium oxide has a low work function and emits thermoelectrons at low temperatures.

  The cathode 6 may be an indirectly heated electrode that emits thermoelectrons when the heater is heated. The cathode 6 is not limited to a thermoelectron source that emits thermoelectrons, but may be another electron source such as a field emission electron source such as a cold cathode or a bombardment electron source. The electron source housing 7 includes a body portion 7 a that houses the electron generation source 5, and an opening portion 7 b for emitting thermal electrons from the electron source portion 3.

  The electron source unit 3 includes an electrode 8 for controlling the movement of thermoelectrons emitted from the cathode 6, a pair of lead electrodes 9 for supplying current to the cathode 6, and a cathode 6 (a pair of lead electrodes 9). And a glass tube 10 for insulatingly fixing. The cathode 6 is located in the glass tube 10. One end of the glass tube 10 is open. The glass tube 10 is provided in the electron source housing 7 (body portion 7a) so that the inside of the housing portion 1 is maintained in an airtight state. Moreover, the structure which assembled the cathode 6 on the insulation stem provided with the lead electrode 9 or the vacuum flange may be used without using the glass tube 10. Both end portions of the cathode 6 are electrically connected to the lead electrodes 9, respectively. The electrode 8 is electrically connected to one lead electrode 9. The electrode 8 may be provided with another power supply path. When another power supply path is provided for the electrode 8, a potential different from that of the cathode 6 may be supplied to the electrode 8 through the power supply path.

  In the electron source unit 3, an accelerating electric field for accelerating the thermoelectrons generated in the electron generation source 5 toward the electrode unit 40 is formed by the potential supplied to the cathode 6 and the electrode 8. The thermoelectrons emitted from the cathode 6 are led out from the electron source section 3 through the opening of the glass tube 10. The potential difference that forms the accelerating electric field is set to a size that makes it difficult for the thermoelectrons introduced into the processing chamber 21 to directly reach the processing object PO. The potential difference for forming the accelerating electric field is, for example, in the range of 10 to 1000V, and more preferably in the range of 50 to 500V.

  The electron source unit 3 includes a vacuum flange VF that is airtightly and detachably attached to the processing housing 2. That is, the electron source unit 3 is provided in the processing casing 2 by attaching the vacuum flange VF to the processing casing 2. An opening 2 a is formed at a position where the electron source 3 is provided in the processing housing 2. That is, the space in the electron source unit 3 (electron source housing 7) communicates with the space in the processing housing 2 through the opening 2a. The vacuum flange VF is not necessarily required when the electron source unit 3 is provided integrally with the processing housing 2 by welding or the like, or when disposed in the processing unit 20. The vacuum flange VF may be formed integrally with the body portion 7a, or may be formed separately from the body portion 7a.

  The processing unit 20 is disposed inside the processing housing 2. The processing unit 20 includes a processing chamber unit 21 in which a processing space is formed. The processing housing 2 and the processing chamber portion 21 have an introduction opening (not shown) for introducing the processing object PO into the processing chamber portion 21. The processing object PO introduced into the processing chamber portion 21 through the introduction opening is placed in the processing chamber portion 21 in a state of being electrically insulated from the processing chamber portion 21. Thereby, the process chamber part 21 (process part 20) surrounds the process target object PO. The introduction openings of the processing housing 2 and the processing chamber portion 21 are preferably closed at least during the charging process. At least the opening of the processing chamber portion 21 is preferably closed with a member having the same potential as the processing chamber portion 21. The position of the processing object PO is defined by a holding member (not shown).

  As shown in FIG. 3A, the processing chamber portion 21 has, for example, a rectangular parallelepiped shape. In the processing chamber portion 21, an opening 23 is formed on one surface of the processing housing 2 that faces the surface on which the electron source unit 3 is provided. The opening 23 is located so as to face the opening 2 a in the processing housing 2. That is, since the opening 23 is formed in the processing chamber portion 21 at a position facing the electron source portion 3, the space in the electron source portion 3 (electron source casing 7) has the opening portion 2 a and the opening portion. 23, it communicates with the processing space in the processing chamber 21 of the processing unit 20. The processing chamber portion 21 is made of a conductive metal material (for example, stainless steel or aluminum).

  As shown in FIG. 3 (b), the processing chamber portion 21 is opened by substantially the entire one surface facing the surface on which the electron source unit 3 is provided in the processing housing 2, thereby opening the opening 23. May be formed. As shown in (c) of FIG. 3, substantially the entire six surfaces may be opened in the processing chamber portion 21. The processing chamber portion 21 shown in FIG. 3C is a frame structure in which a frame portion is located at each ridge of the rectangular parallelepiped, that is, a rectangular parallelepiped frame structure.

  The processing casing 2 and the processing chamber section 21 are independently supplied with a potential. In this case, the processing housing 2 and the processing chamber portion 21 are electrically insulated from each other. The processing housing 2 and the processing chamber portion 21 do not necessarily need to be electrically insulated from each other, and may be electrically connected to each other. In this case, the processing housing 2 and the processing chamber 21 are set to the same potential. When the charging processing device C1 is used only as a charge removal processing device, it is preferable that the processing housing 2 and the processing chamber portion 21 are electrically connected. The processing casing 2 and the processing chamber section 21 can be electrically connected by arranging the processing chamber section 21 in the processing casing 2 so as to be in contact with the processing casing 2.

The air supply unit 30 and the exhaust unit 33 are provided in the processing housing 2. The air supply unit 30 and the exhaust unit 33 supply and exhaust gas in the housing unit 1 (processing housing 2) in order to set the interior of the housing unit 1 under a predetermined pressure condition. The predetermined pressure condition may be under atmospheric pressure or increased pressure as well as under reduced pressure. The pressure in the housing 1 is, for example, in the range of several tens to 10 ⁻³ Pa, and more preferably in the range of 10 to 10 ⁻² Pa. The air supply unit 30 and the exhaust unit 33 supply and exhaust the charged particle forming gas. Thereby, it is possible to make the inside of the housing | casing part 1 (processing housing | casing 2) in the predetermined pressure atmosphere containing the gas for charged particle formation. As the charged particle forming gas, for example, an inert gas such as argon (Ar) gas or the atmosphere can be used. In the case where the atmosphere surrounding the charging apparatus C1 is a charged particle forming gas, the reduced pressure atmosphere as the predetermined pressure atmosphere can be realized only by the exhaust unit 33. The air supply unit 30 and the exhaust unit 33 do not have to be provided in the processing housing 2, and may be provided directly in the processing chamber unit 21. In this case, it is necessary that the air supply unit 30 and the exhaust unit 33 do not affect the potential of the processing chamber unit 21.

  The electrode part 40 is a mesh-shaped electroconductive member as FIG. 3 shows. The mesh is not limited to the mesh shape, but is a structure in which a predetermined region is two-dimensionally divided into a plurality of regions, such as a lattice shape, a porous shape, or a multi-stage comb blade shape, and the mesh-shaped conductive member is an electrode. When used as the portion 40, the structure is capable of transmitting electrons and forming an electric field. The electrode part 40 is provided in the process chamber part 21 so that the opening part 23 may be covered as FIG. 3 shows. The electrode unit 40 is disposed between the electron source unit 3 and the processing unit 20 so as to partition the electron source unit 3 and the processing unit 20 (processing space). The electrode part 40 is electrically connected to the processing chamber part 21. That is, the electrode part 40 is set to the same potential as the processing chamber part 21. The electrode part 40 consists of stainless steel, for example. The size of the mesh of the electrode unit 40 is set to a size that has a high rate of passage of thermoelectrons and that has very little electric field leakage between the electron source unit 3 and the processing unit 20.

  In the processing chamber portion 21 shown in FIG. 3C, all surfaces are made of a mesh-like conductive member. That is, the conductive member is provided in the frame structure so as to be stretched between the frame portions. In this case, the conductive member constituting one surface facing the surface on which the electron source unit 3 is provided in the processing housing 2 mainly functions as the electrode unit 40.

  Next, charging processing by the charging processing device C1 will be described with reference to FIGS. 4 to 7 are diagrams for explaining charging processing in the charging processing apparatus according to the first embodiment. FIGS. 4A to 4C are diagrams for explaining the process of charging the processing object PO to a negative potential. FIGS. 5A to 5C are diagrams for explaining the process of charging the processing object PO to a positive potential. FIGS. 6A to 6C are diagrams for explaining the process of neutralizing the processing object PO charged to a positive potential. (A)-(c) of FIG. 7 is a figure for demonstrating the process which neutralizes the process target PO charged to the negative potential. 4 and 5 illustrate the case where the processing object PO is an insulator, and FIGS. 6 and 7 illustrate the case where the processing object PO is a conductor.

[Charging to negative potential]
As shown in (a) of FIG. 4, the processing object PO that is not charged, that is, has a potential of 0 V, is disposed in the processing chamber 21 in the charging processing device C1. Due to the air supply unit 30 and the exhaust unit 33 (not shown in FIG. 4), the inside of the housing 1 (the processing housing 2) is brought into a predetermined pressure atmosphere containing a charged particle forming gas. For example, the inside of the housing part 1 is in a pressure atmosphere containing Ar gas and 0.7 to 1.3 Pa (for example, 1 Pa).

  In the charging processing device C1, the processing chamber unit 21 (processing unit 20) is set to a desired negative potential (for example, −200 V). The processing housing 2 is set to a ground potential (ground potential). Thereby, an electric field corresponding to a potential difference (for example, 200 V) between the processing object PO and the processing chamber 21 is formed between the processing object PO and the processing chamber 21. Since the electrode unit 40 and the processing chamber unit 21 have the same potential, an electric field corresponding to the potential difference between the processing object PO and the processing chamber unit 21 is formed up to the vicinity of the electrode unit 40.

  The electron source unit 3 (cathode 6) is set to a lower potential (for example, −400 V) than the processing chamber unit 21 so that the acceleration electric field described above is formed. Thereby, an accelerating electric field corresponding to a potential difference (for example, 200 V) between the electron source unit 3 and the processing chamber unit 21 (electrode unit 40) is formed in the electron source unit 3. The electrode unit 40 suppresses the electric field corresponding to the potential difference between the processing object PO and the processing chamber unit 21 and the electrode unit 40 and the acceleration electric field in the electron source unit 3 from affecting each other.

  In the state in which an accelerating electric field is formed in the electron source unit 3 and the electric field is formed between the processing object PO and the processing chamber unit 21 (electrode unit 40), the cathode 6 is energized. Thermionic electrons are emitted from. The thermoelectrons emitted from the cathode 6 are accelerated by the accelerating electric field, pass through the electrode portion 40, and are introduced into the processing chamber portion 21.

As shown in FIG. 4B, the thermoelectrons introduced into the processing chamber portion 21 are charged particle forming gas existing between the electrode portion 40 in the processing chamber portion 21 and the processing object PO. Are excited to produce positive and negative charged particles. That is, the molecules of the charged particle forming gas are dissociated into positive and negative charged particles by the collision of thermoelectrons. As the charged particles forming gas, when Ar gas is used, Ar molecule was cleaved into a Ar ⁺ ions and electrons, occurs and Ar ⁺ ions and electrons.

The generated negative charged particles (electrons) move to the processing object PO side according to the electric field corresponding to the potential difference between the processing object PO and the processing chamber part 21 and the electrode part 40. The processing object PO is charged to a negative potential by the negatively charged particles that have moved to the processing object PO. The generated positive charged particles (Ar ⁺ ions) move toward the processing chamber 21 and the electrode 40 according to the electric field corresponding to the potential difference between the processing object PO and the processing chamber 21 and the electrode 40. . The positive charged particles that have reached the processing chamber portion 21 and the electrode portion 40 are neutralized.

  The electric field formed between the processing object PO and the processing chamber part 21 and the electrode part 40 is weakened according to the charged state of the processing object PO. When the processing object PO is charged to the above-described desired negative potential, an electric field is formed between the processing object PO and the processing chamber part 21 and the electrode part 40 as shown in FIG. The negatively charged particles will not move. Thereby, the processing object PO is charged to a desired negative potential, and the potential of the processing object PO is stabilized in a charged state.

[Charging to positive potential]
As shown in (a) of FIG. 5, a processing object PO that is not charged, that is, has a potential of 0 V, is disposed in the processing chamber 21 in the charging processing device C1. Due to the air supply unit 30 and the exhaust unit 33 (not shown in FIG. 5), the inside of the housing unit 1 (the processing housing 2) is brought into a predetermined pressure atmosphere containing a charged particle forming gas. For example, the inside of the housing part 1 is in a pressure atmosphere containing Ar gas and 0.7 to 1.3 Pa (for example, 1 Pa).

  In the charging processing device C1, the processing chamber portion 21 (processing portion 20) is set to a desired positive potential (for example, +200 V). The processing housing 2 is set to a ground potential (ground potential). Thereby, an electric field corresponding to a potential difference (for example, 200 V) between the processing object PO and the processing chamber 21 is formed between the processing object PO and the processing chamber 21. Since the electrode unit 40 and the processing chamber unit 21 have the same potential, an electric field corresponding to the potential difference between the processing object PO and the processing chamber unit 21 is formed up to the vicinity of the electrode unit 40.

  The electron source unit 3 (cathode 6) is set to a lower potential (for example, −100 V) than the processing chamber unit 21 so that the acceleration electric field described above is formed. Thereby, an acceleration electric field corresponding to a potential difference (for example, 300 V) between the electron source unit 3 and the processing chamber unit 21 (electrode unit 40) is formed in the electron source unit 3. The electrode unit 40 suppresses the electric field corresponding to the potential difference between the processing object PO and the processing chamber unit 21 and the electrode unit 40 and the acceleration electric field in the electron source unit 3 from affecting each other.

  In the state in which an accelerating electric field is formed in the electron source unit 3 and the electric field is formed between the processing object PO and the processing chamber unit 21 (electrode unit 40), the cathode 6 is energized. Thermionic electrons are emitted from. The thermoelectrons emitted from the cathode 6 are accelerated by the accelerating electric field, pass through the electrode portion 40, and are introduced into the processing chamber portion 21.

  As shown in (b) of FIG. 5, the thermoelectrons introduced into the processing chamber section 21 are charged particle forming gas existing between the electrode section 40 in the processing chamber section 21 and the processing object PO. Are excited to produce positive and negative charged particles. The generated positive charged particles move to the processing object PO side in accordance with the electric field corresponding to the potential difference between the processing object PO and the processing chamber part 21 and the electrode part 40. The processing object PO is charged to a positive potential by the positive charged particles that have moved to the processing object PO. The generated negative charged particles move to the processing chamber portion 21 side and the electrode portion 40 side according to the electric field corresponding to the potential difference between the processing object PO and the processing chamber portion 21 and the electrode portion 40. Negatively charged particles that have reached the processing chamber 21 and the electrode 40 are neutralized.

  The electric field formed between the processing object PO and the processing chamber part 21 and the electrode part 40 is weakened according to the charged state of the processing object PO. When the processing object PO is charged to the above-described desired positive potential, an electric field is formed between the processing object PO and the processing chamber part 21 and the electrode part 40 as shown in FIG. The positive charged particles will not move. Thereby, the processing object PO is charged to a desired positive potential, and the potential of the processing object PO is stabilized in a charged state.

[Positive charge neutralization]
As shown in FIG. 6A, in the charging processing device C1, a processing object PO charged to a positive charge is disposed in the processing chamber section 21. For example, the processing object PO is charged to +1 kV. Due to the air supply unit 30 and the exhaust unit 33 (not shown in FIG. 6), the inside of the housing unit 1 (processing housing 2) is brought into a predetermined pressure atmosphere containing a charged particle forming gas. For example, the inside of the housing part 1 is in a pressure atmosphere containing Ar gas and 0.7 to 1.3 Pa (for example, 1 Pa).

  In the charging processing apparatus C1, the processing chamber unit 21 (processing unit 20) and the processing housing 2 are set to the ground potential (ground potential). Thereby, an electric field corresponding to a potential difference (for example, 1 kV) between the processing object PO and the processing chamber 21 is formed between the processing object PO and the processing chamber 21. Since the electrode unit 40 and the processing chamber unit 21 have the same potential, an electric field corresponding to the potential difference between the processing object PO and the processing chamber unit 21 is formed up to the vicinity of the electrode unit 40.

  The electron source unit 3 (cathode 6) is set to a lower potential (for example, −200 V) than the processing chamber unit 21 so that the above-described acceleration electric field is formed. Thereby, an accelerating electric field corresponding to a potential difference (for example, 200 V) between the electron source unit 3 and the processing chamber unit 21 (electrode unit 40) is formed in the electron source unit 3. The electrode unit 40 suppresses the electric field corresponding to the potential difference between the processing object PO and the processing chamber unit 21 and the electrode unit 40 and the acceleration electric field in the electron source unit 3 from affecting each other.

  In the state in which an accelerating electric field is formed in the electron source unit 3 and the electric field is formed between the processing object PO and the processing chamber unit 21 (electrode unit 40), the cathode 6 is energized. Thermionic electrons are emitted from. The thermoelectrons emitted from the cathode 6 are accelerated by the accelerating electric field, pass through the electrode portion 40, and are introduced into the processing chamber portion 21.

  As shown in FIG. 6B, the thermoelectrons introduced into the processing chamber portion 21 are charged particle forming gas existing between the electrode portion 40 in the processing chamber portion 21 and the processing object PO. Are excited to produce positive and negative charged particles. The generated negative charged particles move to the processing object PO side in accordance with the electric field corresponding to the potential difference between the processing object PO and the processing chamber part 21 and the electrode part 40. The processing object PO is neutralized by the negatively charged particles that have moved to the processing object PO. The generated positive charged particles move to the processing chamber portion 21 side and the electrode portion 40 side according to the electric field corresponding to the potential difference between the processing object PO and the processing chamber portion 21 and the electrode portion 40. The positive charged particles that have reached the processing chamber portion 21 and the electrode portion 40 are neutralized.

  The electric field formed between the processing object PO and the processing chamber part 21 and the electrode part 40 is weakened according to the charged state of the processing object PO. When the processing object PO is neutralized, that is, when the potential becomes 0 V, an electric field is generated between the processing object PO and the processing chamber part 21 and the electrode part 40 as shown in FIG. Not formed and negatively charged particles will not move. As a result, the potential of the processing object PO is set to 0 V, and the potential of the processing object PO is stabilized in a state of being neutralized.

[Negative charge neutralization]
As shown in (a) of FIG. 7, the processing object PO charged to a negative charge is disposed in the processing chamber 21 in the charging processing device C1. For example, the processing object PO is charged to −1 kV. Due to the air supply unit 30 and the exhaust unit 33 (not shown in FIG. 7), the inside of the housing unit 1 (processing housing 2) is brought into a predetermined pressure atmosphere containing a charged particle forming gas. For example, the inside of the housing part 1 is in a pressure atmosphere containing Ar gas and 0.7 to 1.3 Pa (for example, 1 Pa).

  In the charging processing apparatus C1, the processing chamber unit 21 (processing unit 20) and the processing housing 2 are set to the ground potential (ground potential). Thereby, an electric field corresponding to a potential difference (for example, 1 kV) between the processing object PO and the processing chamber 21 is formed between the processing object PO and the processing chamber 21. Since the electrode unit 40 and the processing chamber unit 21 have the same potential, an electric field corresponding to the potential difference between the processing object PO and the processing chamber unit 21 is formed up to the vicinity of the electrode unit 40.

  The electron source unit 3 (cathode 6) is set to a lower potential (for example, −200 V) than the processing chamber unit 21 so that the above-described acceleration electric field is formed. Thereby, an accelerating electric field corresponding to a potential difference (for example, 200 V) between the electron source unit 3 and the processing chamber unit 21 (electrode unit 40) is formed in the electron source unit 3. The electrode unit 40 suppresses the electric field corresponding to the potential difference between the processing object PO and the processing chamber unit 21 and the electrode unit 40 and the acceleration electric field in the electron source unit 3 from affecting each other.

  In the state in which an accelerating electric field is formed in the electron source unit 3 and the electric field is formed between the processing object PO and the processing chamber unit 21 (electrode unit 40), the cathode 6 is energized. Thermionic electrons are emitted from. The thermoelectrons emitted from the cathode 6 are accelerated by the accelerating electric field, pass through the electrode portion 40, and are introduced into the processing chamber portion 21.

  As shown in FIG. 7B, the thermoelectrons introduced into the processing chamber 21 are charged particle forming gas existing between the electrode 40 in the processing chamber 21 and the processing object PO. Are excited to produce positive and negative charged particles. The generated positive charged particles move to the processing object PO side in accordance with the electric field corresponding to the potential difference between the processing object PO and the processing chamber part 21 and the electrode part 40. In the processing object PO, the negative charged potential is neutralized by the positive charged particles that have moved to the processing object PO. The generated negative charged particles move to the processing chamber portion 21 side and the electrode portion 40 side according to the electric field corresponding to the potential difference between the processing object PO and the processing chamber portion 21 and the electrode portion 40. Negatively charged particles that have reached the processing chamber 21 and the electrode 40 are neutralized.

  The electric field formed between the processing object PO and the processing chamber part 21 and the electrode part 40 is weakened according to the charged state of the processing object PO. When the processing object PO is neutralized, that is, when the electric potential becomes 0 V, an electric field is generated between the processing object PO and the processing chamber part 21 and the electrode part 40 as shown in FIG. Not formed and the positive charged particles will not move. As a result, the potential of the processing object PO is set to 0 V, and the potential of the processing object PO is stabilized in a state of being neutralized.

  As described above, in the present embodiment, an acceleration electric field for accelerating the thermal electrons generated in the electron generation source 5 toward the electrode portion 40 is formed in the electron source unit 3. The generated thermoelectrons pass through the mesh electrode 40 and are efficiently introduced into the processing unit 20 (processing chamber 21). The thermoelectrons introduced into the processing chamber 21 excite the charged particle forming gas molecules in the processing chamber 21 to generate positive and negative charged particles. Depending on the electric field formed by either one of the generated positive and negative charged particles and the potential of the processing object PO and the potential of the processing chamber 21 (desired potential), the processing object PO. Move to the side. One of the generated positive and negative charged particles moves to the processing chamber portion 21 side. The processing object PO is charged to a desired potential by the charged particles that have moved to the processing object PO. When the processing object PO is charged to a desired potential, an electric field is not formed between the processing object PO and the processing unit, and the charged particles do not move. Therefore, the processing object PO is reliably charged to a desired potential and stabilized in the charged state.

  In the present embodiment, the processing chamber section 21 includes an opening 23 at a position facing at least the electron source section 3. The electrode unit 40 is disposed in the processing chamber unit 21 so as to cover the opening 23. Thereby, the electrode part 40 which suppresses that the acceleration electric field formed in the electron source part 3 and the electric field formed in the process chamber part 21 (process part 20) mutually influence the electron source part 3 and It can be reliably and easily disposed between the processing chamber 21.

  The housing unit 1 includes an air supply unit 30 and an exhaust unit 33 for bringing the inside of the processing unit 20 (processing chamber unit 21) into a predetermined pressure atmosphere containing a charged particle forming gas. Thereby, the supply and discharge of the charged particle forming gas, and the pressure adjustment in the processing chamber 21 can be easily performed so that the electrons and the charged particles function effectively.

  The electron generation source 5 includes a cathode 6 that emits thermal electrons. Thereby, the electron generation source 5 having a high output can be easily realized.

  In the charging processing device C1, the molecules of the charged particle forming gas are dissociated according to the pressure of the charged particle forming gas in the casing 1 (processing casing 2) and the acceleration electric field in the electron source 3. The position (hereinafter simply referred to as “dissociation position”) changes. When the acceleration electric field is large, the dissociation position moves away from the electron source unit 3, and when the acceleration electric field is small, the dissociation position approaches the electron source unit 3. When the pressure of the charged particle forming gas is high, the mean free path of electrons (for example, thermal electrons) entering the processing unit 20 is shortened, and the dissociation position approaches the electron source unit 3. When the pressure of the charged particle forming gas is low, the mean free path of electrons becomes long, and the dissociation position moves away from the electron source unit 3. From these facts, the dissociation position can be optimized by adjusting the pressure of the charged particle forming gas and the acceleration electric field. Therefore, the acceleration voltage is preferably adjustable. The acceleration voltage can be adjusted by adjusting the potential supplied to the cathode 6 and the electrode 8, for example.

  Next, a modification of this embodiment will be described with reference to FIGS. 8 and 9 are perspective views showing a charging processing apparatus according to a modification of the first embodiment. FIG. 10 is a perspective view showing a modification of the electron source section.

  As shown in FIG. 8, the position of the electron source unit 3 is not limited to the position shown in FIG. In the electrification processing device C1 shown in FIG. 1, the electron source unit 3 is provided on the surface of the processing housing 2 that faces the processing object PO. On the other hand, in the charging processing apparatus C1 shown in FIG. 8, the electron source unit 3 is provided on the side surface of the processing housing 2 other than the surface facing the processing object PO.

  The size of the processing chamber portion 21 is not limited to the size shown in FIG. As illustrated in FIGS. 9A to 9D, the size of the processing chamber portion 21 may be significantly smaller than that of the processing housing 2. Further, the position of the electron source unit 3 is such that the entire electron source unit 3 is located outside the processing case 2 (see FIG. 9A), and a part of the electron source unit 3 is in the processing case 2. It may be a position (see (b) of FIG. 9) or a position (see (c) and (d) of FIG. 9) where the entire electron source unit 3 is located in the processing housing 2. In FIG. 9D, the electron source unit 3 is provided in the processing chamber unit 21. In FIG. 9, for example, the processing chamber portion 21 shown in FIG. 3C is used as the processing chamber portion 21.

  When the processing chamber portion 21 is reduced in size, it is possible to perform processing in a state in which a portion where charging processing is desired and a portion where charging processing is not desired are separated. When the electron source unit 3 is disposed in the vicinity of the processing chamber unit 21, it is possible to effectively use the thermal electrons from the electron source unit 3, and the charging process can be performed more efficiently. When the electron source unit 3 is provided in the processing chamber unit 21, the electron source unit 3 is set to the same potential as the processing chamber unit 21. It is necessary to increase the pressure resistance.

  The electrode part 40 is not necessarily provided in the processing chamber part 21. For example, as shown in FIG. 10, the electrode unit 40 may be provided in the electron source housing 7 so as to cover the opening 7b. That is, the electron source unit 3 may have the electrode unit 40. At this time, the electrode unit 40 is insulated from the electron source housing 7 and is fixed to the electron source housing 7 via, for example, an insulating member so that a desired potential is supplied. It is preferable that a power supply path to be provided. Depending on the value of the desired potential, the electrode unit 40 may be directly fixed to the electron source housing 7 so as to have the same potential as the electron source housing 7. The processing housing 2 and the processing chamber 21 need only have openings 2a and 23 through which the thermoelectrons emitted from the electron source 3 can pass. In particular, when the electron source unit 3 includes the vacuum flange VF and the electrode unit 40, the electron source unit 3 is unitized, and application to various apparatuses that include the processing object PO is extremely simple. Can be done.

  The electrode unit 40 may be provided in both the processing chamber unit 21 and the electron source unit 3. In this case, for example, even if there is a factor such as proximity of objects having different potentials, the electric field between the electron source unit 3 and the processing chamber unit 21 is formed orderly without being affected by the influence. Therefore, the thermoelectrons can be incident on the processing chamber portion 21 stably. In addition, when the electrode part 40 is provided in both the process chamber part 21 and the electron source part 3, both electrode parts 40 may be made into the same electric potential, and the electrode part 40 by the side of the electron source part 3 is processed from the process chamber. It is good also as a different electric potential that an electron is accelerated toward the electrode part 40 by the part 21 side. In this case, electrons are sufficiently accelerated between the cathode 6 and the electrode section 40 on the electron source section 3 side, and it is preferable from the viewpoint of electron utilization efficiency that the acceleration of the electrons between both the electrode sections 40 is small. Thereby, the accelerating electric field in the electron source unit 3 and the electric field between the processing chamber unit 21 and the electron source unit 3 are formed more orderly. Further, an acceleration electric field is formed between the cathode 6 and the electrode section 40 on the electron source section 3 side so as to greatly accelerate electrons, and an electric field is formed between the electrode sections 40 to decelerate the accelerated electrons. By doing so, a potential may be supplied so that a desired acceleration voltage is finally obtained when passing through the electrode section 40 on the processing chamber section 21 side.

(Second Embodiment)
With reference to FIG.11 and FIG.12, the structure of the electrical charging apparatus C2 which concerns on 2nd Embodiment is demonstrated. FIG. 11 is a perspective view showing a charging processing apparatus according to the second embodiment. FIG. 12 is a cross-sectional view showing an example of the electron source section. The charge processing device C2 according to the second embodiment is different from the charge processing device C1 according to the first embodiment with respect to the configuration of the electron source unit 3.

  As shown in FIGS. 11 and 12, the charging processing device C <b> 2 includes a housing unit 1 and an electrode unit 40. Similarly to the charging processing device C1, the charging processing device C2 can charge an uncharged processing object to a positive or negative potential. The electrification processing device C2 can neutralize a processing target charged to a positive or negative potential or change it to a desired potential.

  As shown in FIG. 12, the electron source unit 3 (electron source housing 7) has a longitudinal direction and a short direction in plan view. The electron source unit 3 has a substantially rectangular parallelepiped shape. The cathode 6 extends along the longitudinal direction of the electron source section 3. The electron source unit 3 has a pair of current introduction terminals 11 provided in the electron source housing 7 and electrically connected to the cathode 6. The pair of current introduction terminals 11 are disposed at both ends of the electron source housing 7 in the longitudinal direction. The shapes of the opening 2a (not shown in FIG. 11) of the processing housing 2 and the opening 23 (not shown in FIG. 11) of the processing chamber 21 correspond to the planar shape of the electron source unit 3, and are, for example, long The shape has a direction and a short direction. The electrode unit 40 is insulated from the electron source housing 7 and is fixed to the electron source housing 7 via, for example, an insulating member so as to be supplied with a desired potential, and power is supplied to the electrode unit 40. It is preferable that a route is provided. Depending on the value of the desired potential, the electrode unit 40 may be directly fixed to the electron source housing 7 so as to have the same potential as the electron source housing 7.

  In the present embodiment, the electron source unit 3 has a longitudinal direction and a short direction in plan view, and the cathode 6 extends along the longitudinal direction of the electron source unit 3. Thereby, even if the processing object is a long object or an object having a large area, the charging apparatus C2 can reliably charge the processing object to a desired potential.

(Third embodiment)
A modification of the electron source unit 3 will be described with reference to FIGS. FIG. 13 is a plan view showing a modification of the electron source section. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. The electron source unit 3 according to the third embodiment is different from the electron source unit 3 in the first and second embodiments in that photoelectrons are emitted instead of thermal electrons.

  As shown in FIGS. 13 to 15, the electron source unit 3 includes an electron generation source 50 that emits photoelectrons and an electron source housing 51 that houses the electron generation source 50. Similarly to the electron source unit 3 shown in FIGS. 11 and 12, the electron source unit 3 has a longitudinal direction and a short direction in plan view. The electron generation source 50 includes an energy beam source 52 that emits an energy beam having a predetermined wavelength, and a photoelectron emitter 53 that emits photoelectrons to the outside when the energy beam having a predetermined wavelength is incident. As the energy ray source 52, for example, a long excimer lamp or the like is used.

  The electron source unit 3 is provided in the processing casing 2 by attaching the vacuum flange VF to the processing casing 2. Also in the present embodiment, the vacuum flange VF is not necessarily required when the electron source unit 3 is provided integrally with the processing housing 2 by welding or the like, or when disposed in the processing unit 20. . The vacuum flange VF may be formed integrally with the electron source housing 51 or may be formed separately from the electron source housing 51.

  The energy ray source 52 is an energy ray source that emits energy rays having a wavelength included in a band from, for example, X rays to infrared rays. Considering the ease of producing the photoelectron emitter 53 and the deterioration in the environment exposed to the atmosphere, the energy beam source 52 emits energy rays included in the band from X-rays to UV light. A radiation source is preferred. Examples of the energy ray source include an excimer lamp or deuterium lamp that emits UV light or VUV light (vacuum ultraviolet light), a UV laser light source, or an X-ray tube. As the energy ray source 52, an excimer lamp that emits VUV light of light energy, in which the quantum efficiency of the photoelectron emitter 53 is relatively high is particularly preferable. When the energy beam having a predetermined wavelength includes vacuum ultraviolet light, photoelectrons can be generated more efficiently.

  The electron source housing 51 extends in the longitudinal direction of the electron source unit 3 so as to connect the pair of end surface units 51a and the pair of end surface units 51a that are opposed to each other in the longitudinal direction of the electron source unit 3, and is opposed to each other. A pair of side surface portions 51b and a top surface portion 51c connected to the pair of end surface portions 51a and the pair of side surface portions 51b. The electron source casing 51 includes an opening 51d for emitting photoelectrons from the electron source unit 3 at a position facing the upper surface 51c.

The energy ray source 52 is disposed in the gas introduction pipe 55. Both ends of the gas introduction pipe 55 are airtightly held by the pair of end surface parts 51a of the electron source casing 51 via O-rings. The gas introduction tube 55 is disposed so as to penetrate the electron source housing 51 in the longitudinal direction of the electron source unit 3. The energy beam source 52 is also disposed so as to penetrate the electron source housing 51 in the longitudinal direction of the electron source unit 3. Gas inlet tube 55 is made of a material that transmits energy ray of a predetermined wavelength emitted from the energy beam source 52, for example, made of quartz glass or MgF _2. The gas introduction pipe 55 may be a tubular member made of metal or the like. In this case, it is preferable that an opening is provided at a predetermined position of the tubular member, and a window material made of quartz glass or MgF ₂ is provided in the opening.

  A gas introduction part 57 that introduces gas into the gas introduction pipe 55 is connected to one end of the gas introduction pipe 55. The other end of the gas introduction pipe 55 functions as a gas discharge part that discharges the gas introduced into the gas introduction pipe 55. As the gas introduced into the gas introduction pipe 55, an inert gas such as nitrogen is used to cool the energy ray source 52. Since the gas is introduced into the gas introduction pipe 55 from the gas introduction part 57 and is discharged from the gas discharge part, it is possible to suppress a decrease in the transmittance of photons. Power supply lines 58 and 59 connected to the electrode of the energy ray source 52 are led out from the other end of the gas introduction pipe 55. The gas can be introduced and discharged or the power supply lines 58 and 59 can be led out from either end of the gas introduction pipe 55. The part where the power lines 58 and 59 are led out is not limited to the open end of the gas introduction pipe 55. Both ends of the gas introduction pipe 55 are hermetically sealed so that gas can be introduced and discharged, and the power supply lines 58 and 59 may be led out by connecting to a power feeding portion penetrating the inside and outside of the gas introduction pipe 55.

  The photoelectron emitter 53 is provided in the electron source housing 51 via an insulating substrate 56. The photoelectron emitter 53 is electrically insulated from the electron source housing 51. The photoelectron emitter 53 has five surface portions extending along the surface portions 51 a to 51 c of the electron source housing 51. In the photoelectron emitter 53, the inner surface of the five surface portions becomes a photoelectron emission surface. That is, a position corresponding to the opening 51d of the electron source housing 51 is open. The five surface portions of the photoelectron emitter 53 are positioned so as to surround the energy beam source 52 via the gas introduction tube 55. The photoelectron emitter 53 is electrically connected to a current introduction terminal 54 provided in the electron source housing 51. The photoelectron emitter 53 is detachably attached to the electron source housing 51. As a result, the photoelectron emitter 53 can be replaced. The number of surface portions of the photoelectron emitter 53 is not limited to five, and may be a polyhedron having a structure in which photoelectrons are easily emitted to the processing chamber portion 21 side.

The photoelectron emitter 53 is made of a material that has little deterioration even in an environment exposed to the atmosphere and that has a high quantum efficiency with respect to energy rays (for example, UV light or VUV light) emitted from the energy ray source 52. Examples of the material used include Au, Ni, stainless steel, Al, diamond thin film, DLC (diamond-like carbon) thin film, and Al ₂ O ₃ thin film. A material having a high quantum efficiency with respect to UV light or VUV light is generally Au. For VUV light, Al, Al ₂ O ₃ thin film, or diamond thin film is a material with relatively high quantum efficiency. Each thin film is formed on the surface of a metal substrate. The photoelectron emission surface of the photoelectron emitter 53 may be subjected to a mirror surface treatment.

  The electrode portion 40 is provided in the opening 51 d so as to cover the opening 51 d of the electron source housing 51. The electrode unit 40 is insulated from the electron source housing 51 and is fixed to the electron source housing 51 through an insulating member, for example, so as to be supplied with a desired potential. It is preferable that a route is provided. Depending on the value of the desired potential, the electrode unit 40 may be directly fixed to the electron source housing 51 so as to have the same potential as the electron source housing 51. The electrode unit 40 forms an accelerating electric field in the electron source unit 3 that accelerates the photoelectrons generated in the photoelectron emitter 53 toward the processing unit 20 due to a difference from the potential supplied to the photoelectron emitter 53. The electrode unit 40 forms an electric field corresponding to the potential difference between the processing object PO and the processing chamber unit 21 up to the vicinity of the boundary between the electron source unit 3 and the processing unit 20. Moreover, the electrode part 40 suppresses that the acceleration electric field formed in the electron source part 3 and the electric field corresponding to the electric potential difference of the process target PO, the process chamber part 21, and the electrode part 40 mutually influence each other. To do.

  In the present embodiment, the electron source unit 3 includes an energy beam source 52 that emits an energy beam having a predetermined wavelength, and a photoelectron emitter 53 that emits photoelectrons to the outside when the energy beam having a predetermined wavelength is incident. As a result, an energy ray source having a sealed structure (for example, a lamp or the like) that is less affected by the performance and life of the atmosphere (pressure and vacuum degree, etc.) in the charging device (electron source housing 51) is used. Can do. As a result, it is possible to realize an electron generation source having high stability with respect to the atmosphere in the charging processing device C1.

  In the present embodiment, the electron source unit 3 has a longitudinal direction and a short direction in plan view, and the energy beam source 52 extends along the longitudinal direction of the electron source unit 3. As a result, even if the processing object PO is a long object or an object having a large area, the processing object PO can be reliably charged to a desired potential.

  With reference to FIG.16 and FIG.17, the further modification of the electron source part 3 is demonstrated. 16 and 17 are cross-sectional views showing further modifications of the electron source section. The cross-sectional configurations shown in FIGS. 16 and 17 correspond to the cross-sectional configurations when cut along a plane perpendicular to the short direction of the electron source section 3. The electron source unit 3 shown in FIGS. 16 and 17 is located entirely within the processing housing 2 like the electron source unit 3 included in the charging processing device C1 shown in FIG. 9C. Yes. In any of the modifications, the electrode unit 40 is insulated from the electron source housing 51 and is fixed to the electron source housing 51 via an insulating member, for example, so that a desired potential is supplied. It is preferable that a power supply path to the electrode unit 40 is provided. Depending on the value of the desired potential, the electrode unit 40 may be directly fixed to the electron source housing 51 so as to have the same potential as the electron source housing 51.

  In the electron source unit 3 shown in FIG. 16, the gas introduction part 57 is provided at the other end of the gas introduction pipe 55. The gas introduction part 57 has a flange 57a that defines a gas introduction space. The flange 57a is airtightly provided with a current introduction terminal 60 to which a power line 58 is electrically connected. The power line 59 is electrically connected to the flange 57a and grounded. Similarly to the power supply line 58, the power supply line 59 may be connected to a current introduction terminal, and a potential other than ground may be supplied to the power supply line 59 through the current introduction terminal. The current introduction terminal 60 is electrically connected to the current introduction terminal 62 through the power line 61. The current introduction terminal 62 is airtightly provided on the flange 63. The flange 63 is detachably attached to the processing housing 2 and is airtight. A gas introduction port 65 connected to the gas introduction portion 57 via the gas introduction pipe 64 is disposed in the flange 63.

  A gas discharge portion 68 connected to a gas discharge port 67 through a gas discharge tube 66 is provided at one end of the gas introduction tube 55. The gas discharge port 67 is airtightly provided in the flange 69. The flange 69 is detachably attached to the processing housing 2 and is airtight. The gas is introduced from the gas introduction port 65, passes through the gas introduction pipe 64, the gas introduction part 57, the gas introduction pipe 55, the gas discharge part 68, and the gas discharge pipe 66 and is discharged from the gas discharge port 67. A current introduction terminal 71 that is electrically connected to the current introduction terminal 54 through the power supply line 70 is disposed on the flange 69.

  In the electron source section 3 shown in FIG. 17, the power lines 58 and 59 connected to the electrodes of the energy beam source 52 pass through the flexible tube constituting the gas introduction pipe 64 and pass through the processing casing 2 (processing section 20 ) Has been derived out. Similar to the gas introduction part 57, the gas discharge part 68 has a flange 68 a that defines a gas introduction space. A flexible tube constituting a gas discharge pipe 66 is connected to the gas discharge unit 68. The gas introduction port 65, the current introduction terminal 71, and the gas discharge port 67 are provided on one flange 72 that is detachably attached to the processing housing 2 and is airtight. Thus, by using a flexible tube, the freedom degree of arrangement | positioning of the electron source part 3 can be raised, for example, the electron source part 3 can be arrange | positioned closer to the process chamber part 21. FIG. The electron source unit 3 may be directly fixed to the processing housing 2 without using the flange 72.

  A further modification of the electron source unit 3 will be described with reference to FIGS. 18-20 is sectional drawing which shows the further modification of an electron source part. The cross-sectional configurations shown in FIGS. 18 to 20 correspond to the cross-sectional configurations when cut along a plane orthogonal to the longitudinal direction of the electron source unit 3. The electrode unit 40 is insulated from the electron source housing 51 and is fixed to the electron source housing 51 through an insulating member, for example, so as to be supplied with a desired potential. It is preferable that a route is provided. Depending on the value of the desired potential, the electrode unit 40 may be directly fixed to the electron source housing 51 so as to have the same potential as the electron source housing 51.

  In the modification shown in FIG. 18, the energy beam source 52 is disposed on the side surface 51b side. In other words, the energy beam source 52 is more specifically configured so that the photoelectron incident axis A1 from the electron source unit 3 to the processing unit 20 and the energy beam output axis A2 of the energy beam source 52 are not coaxial. And the energy beam emission axis A2 are arranged so as to be substantially orthogonal to each other. An opening for guiding the energy beam from the energy beam source 52 to the inner space of the photoelectron emitter 53 is formed on the side surface 51 b and the surface facing the one side surface 51 b of the photoelectron emitter 53. . The photoelectron emitter 53 has an inclined surface so that photoelectrons are emitted toward the opening 51 d in a cross section orthogonal to the longitudinal direction of the electron source unit 3. That is, the photoelectron emitter 53 includes an inclined surface that is inclined with respect to the energy ray emission axis A <b> 2 of the energy ray source 52. The inclined surface may consist of a plurality of inclined surfaces having different angles.

The electron source unit 3 includes a mesh-like electrode unit 73. The electrode unit 73 is disposed between the energy beam source 52 and the photoelectron emitter 53 and has the same potential as the photoelectron emitter 53. In this modification, the electrode portion 73 is provided on the photoelectron emitter 53. The electrode portion 73 is made of a material having high photoelectron emission characteristics such as Au or Al. The electrode unit 73 may be, for example, a mesh made of stainless steel and having a thin film made of Au, Al, Al ₂ O ₃ or the like formed on the surface thereof. The electron source unit 3 does not necessarily include the electrode unit 73, and the electron source unit 3 may not include the electrode unit 73.

  In the present modification, the photoelectrons emitted from the photoelectron emitter 53 are prevented from moving toward the energy beam source 52 by the electrode unit 73, and the photoelectrons are efficiently directed toward the processing unit 20 (not shown in FIG. 18). Can lead. Further, charging of the energy beam source 52 and the like can be prevented by the electrode portion 73.

  In the electron source unit 3 shown in FIG. 18, the energy beam source 52 is disposed on the side surface 51b side, and the photoelectron incident axis A1 and the energy beam emitting axis A2 are not coaxially arranged in more detail. Are arranged so that the photoelectron incident axis A1 and the energy ray emitting axis A2 are substantially orthogonal to each other, so that the energy rays emitted from the energy ray source 52 are directly irradiated to the processing unit 20 (not shown in FIG. 18). It is hard to be done. For this reason, it can suppress that dissociation of a substance, etc. arise in the site | part to which the energy beam in the process part 20 was irradiated. Further, the photoelectron emitter 53 has an inclined surface so that photoelectrons are emitted toward the opening 51 d in a cross section orthogonal to the longitudinal direction of the electron source 3. That is, since the photoelectron emitter 53 includes an inclined surface that is inclined with respect to the energy ray emission axis A2 of the energy ray source 52, the photoelectrons generated can be efficiently guided to the processing unit 20.

In the modification shown in FIG. 19, the electron source unit 3 includes a window material 74. The window member 74 is disposed between the energy beam source 52 and the photoelectron emitter 53 and transmits energy beams having a predetermined wavelength. When the energy ray source 52 is, for example, a soft X-ray source, the window member 74 is made of an X-ray transmissive material such as a Be or Ti thin film. When the energy beam source 52 is, for example, a UV light source or a VUV light source, the window member 74 is made of quartz glass, MgF ₂ or the like.

  The window member 74 hermetically seals the space in the electron source unit 3 (electron source housing 51) in which the photoelectron emitter 53 is accommodated. The window material 74 is provided in the electron source housing 51 via an O-ring 75. The energy beam source 52 is housed in a housing portion 76 that is detachably attached to the electron source housing 51 and is airtight. The window member 74 is provided on the electron source housing 51 by being sandwiched between the housing portion 76 and the electron source housing 51 by attaching the housing portion 76 to the electron source housing 51. In order to suppress cooling of the energy beam source 52 and a decrease in energy dose, an inert gas such as nitrogen gas is preferably circulated in the internal space of the housing portion 76.

  Also in this modification, photoelectrons can be efficiently guided toward the processing unit 20 by the electrode unit 73, and charging of the energy beam source 52, the window material 74, and the like can be prevented.

  The electron source unit 3 shown in FIG. 19 further includes a window member 74 that is disposed between the energy beam source 52 and the photoelectron emitter 53 and transmits an energy beam having a predetermined wavelength. Thus, the space in the electron source unit 3 in which the photoelectron emitter 53 is accommodated is hermetically sealed. For this reason, operations such as replacement and maintenance related to the energy beam source 52 can be easily performed without affecting the predetermined pressure atmosphere in the processing unit 20. In addition, since the energy beam source 52 is arranged on the side surface 51b side, the energy beam emitted from the energy beam source 52 is not easily irradiated directly on the processing unit 20. For this reason, it can suppress that dissociation of a substance, etc. arise in the site | part to which the energy beam in the process part 20 was irradiated.

  In the modification shown in FIG. 20, the window member 74 is provided on the photoelectron emitter 53. The window member 74 is provided in the photoelectron emitter 53 by being sandwiched between the housing portion 76 and the photoelectron emitter 53 by attaching the housing portion 76 to the electron source housing 51. The accommodating portion 76 is provided in the electron source housing 51 via the O-ring 75. The photoelectron emitter 53 has a curved surface so that photoelectrons are emitted toward the opening 51 d in a cross section orthogonal to the longitudinal direction of the electron source unit 3.

A thin film 77 that forms a transmissive photocathode and has conductivity is formed on the surface of the window member 74 on the photoelectron emitter 53 side. The thin film 77 has, for example, a thickness of several nm to several hundred nm and is made of Au, Al, Al ₂ O ₃ or the like. The thin film 77 is in contact with the photoelectron emitter 53 so as to have the same potential as that of the photoelectron emitter 53 in a state where the window member 74 is provided on the photoelectron emitter 53. That is, the window material 74 is disposed between the energy beam source 52 and the photoelectron emitter 53 so that the thin film 77 and the photoelectron emitter 53 are in contact with each other. The thin film 77 is brought to the same potential as the photoelectron emitter 53 by contact with the photoelectron emitter 53. The thin film 77 and the photoelectron emitter 53 may be brought into the same potential by being brought into electrical contact through a conductive member or the like without being in physical contact. The thin film 77 may be supplied. Moreover, you may change the electric potential of the photoelectron emitter 53 and the thin film 77 as needed. In this case, the distribution of emitted photoelectrons can be changed.

  In this modification, since photoelectrons are also emitted from the thin film 77, the amount of photoelectrons guided to the processing unit 20 increases. The thin film 77 can efficiently guide the photoelectrons toward the processing unit 20. As a result, according to this modification, the effect of the charging process can be enhanced.

  A further modification of the electron source unit 3 will be described with reference to FIGS. FIG. 21 is a perspective view showing an electron source section. FIG. 22 is a cross-sectional view of the electron source portion shown in FIG. FIG. 23 is a perspective view showing a photoelectron emitter.

  The electron source unit 3 includes an electron source housing 51, an energy beam source 52, a photoelectron emitter 53, and an electrode unit 40. As the energy ray source 52, for example, an excimer lamp or a deuterium lamp is used. The energy ray source 52 includes a light emitting unit assembly 78 and a glass sealed container 79. The sealed container 79 includes a side tube portion 79a that houses the light emitting unit assembly 78, and a protruding portion 79b that protrudes from the side tube portion 79a and communicates with the side tube portion 79a. The tip of the protruding portion 79b is sealed by a light emission window that emits energy rays (VUV light).

  The electron source casing 51 has a cylindrical shape with both ends opened. A vacuum flange VF is provided at one end of the electron source housing 51. The electrode part 40 is provided on the vacuum flange VF so as to cover the opening of the vacuum flange VF. The electrode unit 40 is insulated from the electron source housing 51 and is fixed to the electron source housing 51 through an insulating member, for example, so as to be supplied with a desired potential. It is preferable that a route is provided. Depending on the value of the desired potential, the electrode unit 40 may be directly fixed to the electron source housing 51 so as to have the same potential as the electron source housing 51.

  An electrically insulating substrate 80 is disposed at the other end of the electron source casing 51 so as to close the opening at the other end. The other end of the electron source casing 51 is hermetically sealed by a quick-coupling coupling 81 in a state where the substrate 80 is disposed. The quick coupling 81 has a clamp 81a. A current introduction terminal 82 is airtightly provided on the substrate 80. The current introduction terminal 82 is fixed to the substrate 80 by, for example, welding. The substrate 80 functions as a blank flange of the quick coupling 81.

  The photoelectron emitter 53 is disposed in the electron source housing 51. As shown in FIG. 23, the photoelectron emitter 53 has a trunk portion 53a and a bottom portion 53b, and has a bottomed cylindrical shape with one end facing the bottom portion 53b opened. The trunk portion 53a has a cylindrical shape with a circular cross section. The cross section of the trunk portion 53a is not limited to a circle and may be a polygon. The inner surface of the bottom 53b is a flat surface. The photoelectron emitter 53 is provided on the substrate 80 via the fixed substrate 83 and the insulating substrate 84. The fixed substrate 83 has conductivity. The fixed substrate 83 is detachably provided on the insulating substrate 84 by screwing or the like. The insulating substrate 84 is detachably provided on the substrate 80 by screwing or the like.

  The photoelectron emitter 53 is fixed to the fixed substrate 83 by a protrusion formed on the bottom 53 b being screwed with the fixed substrate 83. That is, the photoelectron emitter 53 is detachably provided on the fixed substrate 83. Thereby, replacement | exchange of the photoelectron emission body 53 can be performed easily. A sleeve 85 is provided at the tip of the current introduction terminal 82. The photoelectron emitter 53 is electrically connected to the current introduction terminal 82 via the fixed substrate 83 and the sleeve 85 by providing the sleeve 85 on the fixed substrate 83 by screwing or the like.

  As shown in FIG. 23, the body portion 53 a of the photoelectron emitter 53 is formed with an opening through which the protruding portion 79 b of the sealed container 79 included in the energy ray source 52 is inserted. The protruding portion 79 b is also inserted into a cylindrical portion 86 formed integrally with the electron source housing 51, and is airtightly provided on the cylindrical portion 86 via an O-ring 87. The energy beam source 52 is detachably provided on the electron source housing 51. If the energy beam from the energy beam source 52 is introduced into the photoelectron emitter 53 through the opening of the body 53a and can be irradiated to the photoelectron emission surface, the sealing container 79 protrudes into the opening of the body 53a of the photoelectron emitter 53. The portion 79b may not be inserted. Further, the electron source housing 51 may include a window material that transmits energy rays at a position facing the opening of the trunk portion 53a. In this case, the energy beam source 52 is disposed outside the internal atmosphere of the electron source housing 51.

  The photoelectron emitter 53 emits photoelectrons when irradiated with an energy beam from the energy beam source 52. At this time, if an accelerating electric field (for example, 200 V) is formed in the electron source section 3, the emitted photoelectrons are emitted from the electron source section 3 as shown in FIG. FIG. 24 is a diagram for explaining the emission of photoelectrons from the electron source section. In FIG. 24, the flight trajectory of photoelectrons is shown. While the photoelectrons spread over a wide range, they fly so as to concentrate toward the center of the processing chamber 21. However, actually, the photoelectrons hardly reach the processing object PO by colliding with molecules of the charged particle forming gas.

  In this modification, the emission of photoelectrons from the photoelectron emitter 53 and the movement of the emitted photoelectrons to the processing unit 20 side are performed efficiently. Further, in the electron source section 3 shown in FIG. 22, the projecting portion 79 b of the energy beam source 52 is inserted into the opening formed in the body portion 53 a of the photoelectron emitter 53, and thus is emitted from the energy beam source 52. It is difficult for the energy beam to be directly irradiated to the processing unit 20. For this reason, it can suppress that dissociation of a substance, etc. arise in the site | part to which the energy beam in the process part 20 was irradiated.

  A modification of the photoelectron emitter 53 will be described with reference to FIGS. 25 and 26. FIG. 25 is a perspective view showing a modification of the photoelectron emitter. FIG. 26 is a diagram for explaining the emission of photoelectrons from the electron source section.

  In the photoelectron emitter 53 shown in FIG. 25 (a), the inner surface of the bottom 53b has a plane portion having a diameter smaller than the inner diameter of the barrel portion 53a and a plane portion of the barrel portion 53a from the end of the barrel portion 53a. And an inclined surface portion inclined in a taper shape. That is, the space formed by the inner surface of the bottom 53b has a truncated cone shape. In the photoelectron emitter 53 shown in FIG. 25B, the inner surface of the bottom 53b has a concave spherical surface.

  When the photoelectron emitter 53 shown in FIG. 25A is used, as shown in FIG. 26A, the photoelectron emitter 53 shown in FIG. 23 is used more than when the photoelectron emitter 53 is used. The photoelectrons fly so as to concentrate more toward the center of the processing housing 2. When the photoelectron emitter 53 shown in FIG. 25 (b) is used, as shown in FIG. 26 (b), compared to the case where the photoelectron emitter 53 shown in FIG. 23 is used, The photoelectrons fly toward a wider area at the center of the processing housing 2.

  The photoelectron emitter 53 shown in FIG. 25C has a plurality of electrode portions (first to third electrode portions 88a, 88b, 88c in this modification). The first electrode portion 88 a includes a photoelectron emission portion and is a main body portion of the photoelectron emitter 53. An electrical insulator 89a is disposed between the first electrode portion 88a and the second electrode portion 88b, and the first electrode portion 88a and the second electrode portion 88b are electrically insulated by the electrical insulator 89a. Has been. An electrical insulator 89b is disposed between the second electrode portion 88b and the third electrode portion 88c, and the second electrode portion 88b and the third electrode portion 88c are electrically insulated by the electrical insulator 89b. Has been. For example, the first electrode portion 88a and the third electrode portion 88c are set to a negative potential, and the second electrode portion 88b is set to the ground potential (ground potential). The second electrode portion 88b may have a mesh shape. The first electrode portion 88a is formed with an opening through which the protruding portion 79b of the sealed container 79 included in the energy ray source 52 is inserted. At the bottom of the first electrode portion 88a, a protrusion that is screwed with the fixed substrate 83 is formed.

  When the photoelectron emitter 53 shown in (c) of FIG. 25 is used, as shown in (c) of FIG. 26, the photoelectrons shown in FIGS. 23 and 25 (a) and (b) are used. Even if the emitter 53 is used, it flies so as to be concentrated as a whole toward the central portion of the processing housing 2. The photoelectron emitter 53 shown in FIG. 25C has a configuration in which the electron source section 3 is provided in a protruding portion that protrudes from the main body portion of the processing housing 2 as shown in FIG. Is useful. In this case, absorption of photoelectrons at the protrusion is suppressed, and photoelectrons can be efficiently guided to the electron source unit 3. That is, a second electrode portion 88b and a third electrode portion 88c as a photoelectron control unit for controlling photoelectrons are disposed between the first electrode portion 88a and the electrode portion 40, which are main body portions of the photoelectron emitter 53. Therefore, the incident range of photoelectrons in the processing unit 20 can be controlled. Further, by changing the potentials of the first to third electrode portions 88a, 88b, 88c, it is possible to fly so as to diverge without concentrating photoelectrons.

  Next, with reference to FIG. 27, the further modification of the electron source part 3 is demonstrated. FIG. 27 is a perspective view showing a charging processing apparatus to which a further modification of the electron source unit is applied.

  In the electron source unit 3 of the modification shown in FIG. 27, the electron source housing 51, the photoelectron emitter 53, the structure 4 including the electrode unit 40, and the energy beam source 52 are configured separately. Yes. The energy beam source 52 and the structure 4 are provided in the processing housing 2 so as to face each other. That is, the energy beam source 52 and the structure 4 (the photoelectron emitter 53) are arranged so as to be separated from each other and face each other with the processing chamber portion 21 interposed therebetween. The energy beam emitted from the energy beam source 52 passes through the processing unit 20 (processing chamber unit 21), enters the structure 4, and is irradiated to the photoelectron emitter 53.

  In this modification, the energy beam source 52 is provided in the processing housing 2 so as to be separated from the structure 4. For this reason, the energy beam source 52 and the photoelectron emitter 53 can be disposed at a functionally preferable position. For example, if the energy beam source 52 is disposed outside the processing housing 2, the energy beam is suppressed while suppressing the influence of the heat generated by the energy beam source 52 on the internal space of the processing housing 2 and the photoelectron emitter 53. The heat radiation from the source 52 can be easily performed, and the energy source 52 can be easily replaced. In this modification, since the energy beam source 52 and the photoelectron emitter 53 are separated from each other, it is preferable to emit energy beams with high directivity from the energy beam source 52. In this case, an optical lens system or a light guide member for condensing light may be disposed, and the energy ray source 52 may be an energy ray source having high directivity, for example, a UV laser light source.

  The energy ray source 52 is not limited to the above-described arrangement. The energy beam source 52 may be disposed so as to be separated from and opposed to each other by being provided on a surface orthogonal to the surface on which the photoelectron emitter 53 is disposed. In this case, for example, as in the modifications shown in FIGS. 21 to 23, openings are provided in the side portions of the electron source casing 51 and the photoelectron emitter 53, and the opening is between the processing casing 2 and the processing section 20. The structure 4 may be disposed so as to be located in the space, and the photoelectron emitter 53 may be irradiated with energy rays through the opening.

(Fourth embodiment)
Next, with reference to FIG. 28 and FIG. 29, the structure of the static elimination processing apparatus NA which concerns on 4th Embodiment is demonstrated. FIG. 28 is a perspective view showing a static eliminator according to the fourth embodiment. FIG. 29 is a perspective view showing an example of an electron source section. The neutralization processing device NA is a so-called neutralizing device that neutralizes the charge of the processing object PO charged to a positive or negative potential, in the charging processing device.

  The charge removal processing device NA includes a housing unit 1. The housing unit 1 includes an electron source unit 3, a processing housing 2, an air supply unit 30, and an exhaust unit 33. In the charge removal processing apparatus NA, the processing housing 2 also functions as the processing chamber unit 21. The electron source unit 3 is provided with an electrode unit 40 disposed so as to cover the opening 2a of the processing housing 2. The static elimination processing device NA is configured such that the processing housing 2 (at least the inner surface thereof) and the electrode unit 40 are set to a desired charge neutralization level (for example, ground potential). Thereby, according to the static elimination processing apparatus NA, even if it is the processing target PO charged to positive or negative, it can be made a desired charge neutralization level (for example, ground potential). The charge removal process is a charge process to a desired charge neutralization level, and the operation mechanism of the charge removal apparatus NA is the same as the operation mechanism of the charge process apparatus C1 described above. Since the electrode portion 40 has the same potential as the inner surface of the processing housing 2, the electrode portion 40 may be provided directly on the processing housing 2 so as to cover the opening 2 a. When the desired charge neutralization level is the ground potential, the electrode unit 40 may be provided directly on the electron source housing 7 or the vacuum flange VF.

(Fifth embodiment)
Next, with reference to FIG. 30, the structure of the electrical charging apparatus C3 according to the fifth embodiment will be described. FIG. 30 is a perspective view showing a charging processing apparatus according to the fifth embodiment. The charge processing device C3 according to the fifth embodiment is different from the charge processing device C2 according to the second embodiment with respect to the configuration of the processing unit 20.

  As shown in FIG. 30, the charging device C <b> 3 includes a housing unit 1 and an electrode unit 40. Similarly to the charging processing devices C1 and C2, the charging processing device C3 can charge an uncharged processing object to a positive or negative potential. The electrification processing device C3 can also neutralize a processing target charged to a positive or negative potential or change it to a desired potential.

  The processing unit 20 (processing chamber unit 21) includes an opening (introducing unit) 24 for introducing the processing object PO into the processing unit 20 (processing chamber unit 21), and the processing object 20 (processing chamber unit 21). And an opening (leading part) 25 led out from. The pair of openings 24 and 25 are positioned so as to face each other. In the present embodiment, the pair of openings 24 and 25 are respectively provided on a pair of opposed surfaces in the processing chamber 21. In the charging processing apparatus C3, the continuous processing object PO or the processing object PO mounted on a continuous base (not shown) may be moved between the pair of openings 24 and 25. Thereby, the charging process of the processing object PO can be continuously performed.

  The size of the openings 24 and 25 (opening area) is preferably set as close as possible to the size of the processing object PO. When the processing object PO is mounted on the pedestal, the sizes of the openings 24 and 25 are preferably set as close as possible to the size including the pedestal. As a result, another electric field existing around the processing unit 20 enters the processing unit 20 (processing chamber unit 21) from the openings 24 and 25 and affects the electric field of the processing region in the processing unit 20. Can be suppressed.

  The number of openings 24 and 25 is not limited to a pair. The processing unit 20 (processing chamber unit 21) may have a plurality of pairs of openings 24 and 25. The plurality of pairs of openings 24 and 25 can be positioned so as to be lined up on the left and right when viewed from the introduction direction (derivation direction) of the processing object PO. In this case, a plurality of processing objects PO can be charged in parallel.

(Sixth embodiment)
Next, with reference to FIG. 31, the structure of the electrical charging apparatus C4 according to the sixth embodiment will be described. FIG. 31 is a perspective view showing a charging processing apparatus according to the sixth embodiment. The charging processing device C4 according to the sixth embodiment is different from the charging processing devices C2 and C3 according to the second and fifth embodiments with respect to the configuration of the processing unit 20.

  As shown in FIG. 31, the charging processing device C <b> 4 includes a housing unit 1 and an electrode unit 40. Similarly to the charging processing devices C1 to C3, the charging processing device C4 can also charge an uncharged processing target to a positive or negative potential. The electrification processing device C4 can also neutralize the processing target charged to a positive or negative potential or change it to a desired potential.

  The processing unit 20 (processing chamber unit 21) includes two members 26 and 27 that are arranged apart from each other. The two members 26 and 27 are, for example, box-shaped members that are open on one side, and have the same potential. In the electrification processing apparatus C4, the continuous processing object PO or the processing object PO mounted on the continuous base is moved between the two members 26 and 27. That is, by positioning the processing object PO between the two members 26 and 27, the processing object PO is surrounded by the two members 26 and 27. Thereby, the charging process of the processing object PO having a larger size can be continuously performed.

  The distance between the two members 26 and 27 (the thickness of the space between the two members 26 and 27) is preferably set as close as possible to the size (thickness) of the processing object PO. When the processing object PO is mounted on the pedestal, the distance between the two members 26 and 27 is preferably set as close as possible to the size (thickness) including the pedestal. Thereby, another electric field existing around the processing unit 20 enters the processing unit 20 (processing chamber unit 21) from the space between the two members 26 and 27, and the electric field in the processing region in the processing unit 20 is changed. It is possible to suppress the influence. It is also preferable to set the widths of the two members 26 and 27 larger than the width of the processing object PO. In order to make the influence of the electric field from the casing unit 1 (processing casing 2) difficult to reach the processing unit 20, the distance between the casing unit 1 and the processing unit 20 (the two members 26 and 27) is sufficiently set. It is preferable to make it empty. In the space between the two members 26 and 27, a plurality of processing objects PO may be arranged in the horizontal direction and charged simultaneously.

(Seventh embodiment)
Next, with reference to FIG. 32, the structure of the electrical charging apparatus C5 according to the seventh embodiment will be described. FIG. 32 is a perspective view showing a charging processing apparatus according to the seventh embodiment. The charge processing device C5 according to the seventh embodiment is different from the charge processing devices C1 and C4 according to the first and sixth embodiments with respect to the configuration of the processing unit 20.

  As shown in FIG. 32, the charging processing device C <b> 5 includes a housing unit 1 and an electrode unit 40. Similarly to the charging processing devices C1 to C4, the charging processing device C5 can also charge an uncharged processing object to a positive or negative potential. The electrification processing device C5 can neutralize a processing target charged to a positive or negative potential or change it to a desired potential.

  The processing unit 20 (processing chamber unit 21) includes two members 28 and 29 that are arranged apart from each other. The two members 28 and 29 are flat electrodes having a mesh-like portion, and are set to the same potential. The two members 28 and 29 are positioned so as to face each other. In the charging processing device C5, the continuous processing object PO or the processing object PO mounted on the continuous pedestal is moved between the two members 28 and 29. That is, by positioning the processing object PO between the two members 28 and 29, the processing object PO is surrounded by the two members 28 and 29. A space between the two members 28 and 29 is a processing space. Thereby, it is possible to form an appropriate processing space corresponding to the size of the processing object.

  The distance between the two members 28 and 29 (the thickness of the space between the two members 28 and 29) is preferably set as close as possible to the size (thickness) of the processing object PO. When the processing object PO is mounted on the pedestal, the distance between the two members 28 and 29 is preferably set as close as possible to the size (thickness) including the pedestal. As a result, another electric field existing around the processing unit 20 enters the processing unit 20 (processing chamber unit 21) from the space between the two members 28 and 29, and the electric field in the processing region in the processing unit 20 is changed. It is possible to suppress the influence. It is also preferable to set the widths of the two members 28 and 29 larger than the width of the processing object PO. In order to make the influence of the electric field from the casing unit 1 (processing casing 2) difficult to reach the processing unit 20, the distance between the casing unit 1 and the processing unit 20 (two members 28 and 29) is sufficiently set. It is preferable to make it empty.

  The two members 28 and 29 may be movable. For example, the entire members 28 and 29 may be moved. Moreover, the members 28 and 29 may be comprised from several blade-shaped members like the lens shutter, and several blade-shaped members may open and close radially on a central axis. In this case, each of the plurality of blade-like members is provided with a mesh-like opening. Since the two members 28 and 29 are movable, other processing can be performed in addition to the charging processing of the processing object PO. Other processing includes, for example, charged particle processing. In the charged particle processing, a state in which the electromagnetic field of the processing unit 20 is not affected is formed around the processing object PO.

  Subsequently, an application example of the charging apparatus according to the present embodiment will be described with reference to FIGS. 33 to 35 are diagrams for explaining application examples of the charging processing device.

  In FIG. 33, the charging apparatus according to this embodiment is applied to an apparatus 90 that forms a functional film (for example, an antireflection film or a gas barrier film) on the surface of a film F. The device 90 is located in the processing housing 2. The electron source unit 3 and the processing chamber unit 21 are arranged in the previous stage of the film forming unit 91 and remove the static electricity from the film F before film formation.

  In FIG. 34, the charging apparatus according to the present embodiment is applied to a sputtering apparatus 92. The sputtering apparatus 92 includes a target holder 93 that holds the target T, a magnet 94 for generating a magnetic field, and an electrode 95 that holds a film formation target (for example, a Si wafer). The charging apparatus according to the present embodiment neutralizes the film formation target before performing sputtering.

  In FIG. 35, the charge processing apparatus according to the present embodiment is applied to a charge removal processing apparatus 97 for a substrate 96 for hard disk media. The substrate 96 is made of, for example, Al or glass. In the charge removal processing apparatus 97, the substrate 96 is held by the media holder 98. A thin film made of a magnetic material or the like is formed on the substrate 96 that has been neutralized by the neutralization processing apparatus 97 by the film deposition apparatus.

  As mentioned above, although embodiment of this invention has been described, this invention is not necessarily limited to embodiment mentioned above, A various change is possible in the range which does not deviate from the summary.

  For example, the electron source unit 3 may have a plurality of electron generation sources 5. The housing unit 1 may include a plurality of electron source units 3. The electron generation source 50 may include a plurality of energy beam sources 52. The housing unit 1 does not necessarily have to include the air supply unit 30 and the exhaust unit 33.

  As shown in FIG. 36, the electron source unit 3 and the processing unit 20 may constitute a charging processing unit CU in which they are integrated. FIG. 36 is a perspective view showing the charging unit. The electron source unit 3 is fixed to one end side of the processing unit 20, and an opening 20 a is formed on the other end side of the processing unit 20. The opening 20a serves as an introduction part for introducing the processing object PO into the processing part 20. The charging processing unit CU is used, for example, in the housing unit 1. The charging process is performed, for example, in a state where the processing object PO is covered with the processing object PO such that the processing object PO is covered by the processing part 20 in the housing unit 1.

  In this case, it is preferable that the periphery of the processing object PO has the same potential as the processing unit 20, and the opening 20 a is covered with a member having the same potential as the processing unit 20 by covering the processing object PO with the processing unit 20. . For example, the processing object PO may be disposed on a processing table having the same potential as the processing unit 20, and the processing unit 20 may be put on the processing table. The processing unit 20 and the processing table may be sufficiently close to each other so that an electric field can be stably formed in the processing unit 20 or may be in contact with each other. The opening 20a serving as the introduction portion is not limited to the surface facing the electron generation source 5, and may be provided in a portion other than the joint portion with the electron source housing 7 such as a side surface. In this case, the surface facing the electron generation source 5 (the surface corresponding to the opening 20a in FIG. 36) is preferably covered with a member having the same potential as the processing unit 20.

  In order for the internal space of the processing unit 20 to be in a predetermined pressure atmosphere containing a charged particle forming gas, the internal space itself of the housing unit 1 in which the charging processing unit CU is disposed is set to a predetermined pressure atmosphere. In addition, the inside of the processing unit 20 may be placed in a predetermined pressure atmosphere by a charged particle forming gas supply unit (and an exhaust unit) (not shown). In the former case, it is preferable that the processing unit 20 is provided with a mesh unit so as to easily communicate with the internal space of the housing unit 1. In the latter case, as shown in FIG. 36, the processing unit 20 has a wall shape surrounding the inner space so that a space partitioned from the inner space of the housing unit 1 is formed inside the processing unit 20. It is preferable to consist of a member.

  The electrode unit 40 and the processing unit 20 are at the same potential, may be in direct contact with each other, or may be electrically connected through a conductive member. Moreover, the same electric potential may be supplied to the electrode part 40 and the process part 20 through a mutually separate electric power feeding path | route. The electrode unit 40 may be connected to the electron source housing 7 by being formed integrally with the processing unit 20. The electrode unit 40 and the processing unit 20 are insulated from the electron source housing 7 and are fixed to the electron source housing 7 via an insulating member, for example, so that a desired potential is supplied. It is preferable that a power supply path to the electrode unit 40 and the processing unit 20 is provided. Depending on the desired potential value, the electrode unit 40 and the processing unit 20 may be directly fixed to the electron source housing 7 so as to have the same potential as the electron source housing 7.

  Since the electron source unit 3 and the processing unit 20 are hermetically sealed with each other, the electron source unit 3 and the processing unit 20 define a space under a predetermined pressure atmosphere containing a charged particle forming gas. If it exists, the housing | casing part 1 is not necessarily required. When the charging processing apparatus does not include the casing unit 1, the processing unit 20 (processing casing 2) is electrically insulated from a part where the charging processing apparatus is installed (hereinafter simply referred to as “installation part”). Preferably it is. When the charging processing device is used only as a charge removal processing device, the processing unit 20 (processing housing 2) may be electrically connected to the installation site when the installation site is at ground potential.

  DESCRIPTION OF SYMBOLS 1 ... Housing | casing part, 2 ... Processing housing | casing, 2a ... Opening part, 3 ... Electron source part, 5 ... Electron generation source, 6 ... Cathode, 20 ... Processing part, 21 ... Processing chamber part, 23 ... Opening part, 30 DESCRIPTION OF SYMBOLS ... Supply part, 33 ... Exhaust part, 40 ... Electrode part, 50 ... Electron generation source, 52 ... Energy source, 53 ... Photoelectron emitter, 73 ... Electrode part, 74 ... Window material, 77 ... Thin film, C1, C2 , C3, C4, C5... Charging processing device, NA... Static elimination processing device, CU... Charging processing unit, PO.

Claims (23)

A charging processing device for charging a processing object to a desired potential,
An electron source unit that houses an electron generation source that generates electrons, and a processing unit that communicates with the electron source unit and surrounds the object to be processed under a predetermined pressure atmosphere containing a charged particle forming gas. A housing portion having,
A mesh-like electrode unit disposed between the electron source unit and the processing unit so as to partition the electron source unit and the processing unit,
In the electron source part, an accelerating electric field for accelerating electrons generated in the electron generation source toward the electrode part is formed,
The charging processing apparatus, wherein the processing unit and the electrode unit are set to the desired potential. The electron source unit includes an opening communicating with the processing unit,
The charging apparatus according to claim 1, wherein the electrode unit is disposed in the electron source unit so as to cover the opening. The processing unit includes an opening at a position facing at least the electron source unit,
The charging processing apparatus according to claim 1, wherein the electrode unit is disposed in the processing unit so as to cover the opening.   The charging process according to any one of claims 1 to 3, wherein the housing part further includes an exhaust part for bringing the inside of the processing part into a predetermined pressure atmosphere containing a charged particle forming gas. apparatus. The electron source section has a longitudinal direction and a short direction in plan view,
The charge processing apparatus according to claim 1, wherein the electron generation source extends along a longitudinal direction of the electron source unit.   The processing unit includes an introduction unit that introduces the processing object into the processing unit, and a derivation unit that is positioned to face the introduction unit and derives the processing object from the processing unit. The charging processing apparatus according to claim 1, wherein The processing unit has two members that are spaced apart from each other,
The electrification processing apparatus according to claim 1, wherein the processing object is surrounded by the two members by positioning the processing object between the two members.   The charging device according to claim 7, wherein the two members are flat electrodes positioned so as to face each other.   The charging apparatus according to claim 8, wherein the flat electrode is movable.   The charge processing apparatus according to claim 1, wherein the electron generation source includes a cathode that emits thermal electrons.   The charging device according to claim 10, wherein the cathode includes a base part made of a material containing iridium and a covering part made of a material containing yttrium oxide and covering a surface of the base part. .   The electron generation source includes: an energy beam source that emits an energy beam having a predetermined wavelength; and a photoelectron emitter that emits photoelectrons to the outside when the energy beam having the predetermined wavelength is incident. The charging processing apparatus according to any one of claims.   The charging process according to claim 12, wherein the energy beam source is arranged so that a photoelectron incident axis from the electron generation source to the processing unit and an energy beam emission axis of the energy beam source are not coaxial. apparatus. The energy beam source is arranged so that the photoelectron incident axis and the energy beam emitting axis intersect,
The charging apparatus according to claim 13, wherein the photoelectron emitter includes an inclined surface that is inclined with respect to the energy beam emission axis.   The charging apparatus according to claim 12, wherein the energy beam having the predetermined wavelength includes vacuum ultraviolet light.   The electron source section further includes a mesh-shaped electrode section that is disposed between the energy beam source and the photoelectron emitter and has a potential equal to the potential of the photoelectron emitter. The charging processing apparatus as described. The electron source unit further includes a window material disposed between the energy beam source and the photoelectron emitter, and transmitting the energy beam having the predetermined wavelength.
The charge processing apparatus according to claim 12 or 16, wherein a space in the electron source section in which the photoelectron emitter is accommodated is hermetically sealed by the window material. The electron source part further includes a window material that transmits the energy rays of the predetermined wavelength,
On one surface of the window material, a transmissive photocathode is formed, and a conductive thin film is formed,
The charging device according to claim 12, wherein the window material is disposed between the energy beam source and the photoelectron emitter so that the thin film and the photoelectron emitter have the same potential.   The charging apparatus according to claim 12, wherein the photoelectron emitter has a body portion and a bottom portion, and has a bottomed cylindrical shape in which an opening for introducing the energy beam having the predetermined wavelength is formed.   The charging processing apparatus according to claim 12, further comprising a photoelectron control unit arranged between the photoelectron emitter and the electrode unit for controlling the photoelectrons.   The charging apparatus according to claim 12, wherein the energy beam source and the photoelectron emitter are arranged so as to be separated from each other and face each other. A charging processing device for charging a processing object to a desired potential,
An electron source that generates electrons;
A processing unit that surrounds the object to be processed under a predetermined pressure atmosphere containing a charged particle forming gas and into which electrons generated by the electron generation source are introduced;
A mesh-like electrode unit disposed between the electron generation source and the processing unit,
An accelerating electric field is formed between the electron generation source and the electrode part to accelerate electrons generated in the electron generation source toward the electrode part,
A charging processing apparatus in which a potential of the processing unit and the electrode unit is set to the desired potential. A charging method for charging a processing object to a desired potential,
An electron generation source that generates electrons, a processing unit that surrounds the object to be processed under a predetermined pressure atmosphere containing a charged particle forming gas, and in which electrons generated in the electron generation source are introduced; Using a mesh-like electrode unit disposed between the electron generation source and the processing unit,
An acceleration electric field is formed between the electron generation source and the electrode portion to accelerate electrons generated in the electron generation source toward the electrode portion, and the processing portion and the electrode portion are set to the desired potential. And a charging method.

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