JP5718005B2 - A heat-resistant adhesive tape for manufacturing a semiconductor device and a method for manufacturing a semiconductor device using the tape. - Google Patents

Description

  The present invention relates to a heat-resistant adhesive tape for manufacturing a semiconductor device for temporarily fixing a chip used in a method for manufacturing a substrate-less semiconductor package without using a metal lead frame, and a method for manufacturing a semiconductor device using the tape.

  In recent years, CSP (Chip Size / Scale Package) technology has attracted attention as LSI packaging technology. Among these technologies, a chip-only package that does not use a substrate typified by WLP (Wafer Level Package) is one of the package forms that are particularly noted in terms of miniaturization and high integration. In the manufacturing method of WLP, a plurality of semiconductor Si wafer chips arranged in an orderly manner without using a substrate are collectively sealed with a sealing resin, and then separated into individual structures by cutting. Even small packages can be produced efficiently.

  In such a WLP manufacturing method, it is necessary to fix a chip fixed on a conventional substrate on another support. Furthermore, after the resin is sealed and molded into individual packages, it is necessary to release the fixing. Therefore, it is necessary that the support be re-peelable instead of permanent adhesion. Therefore, a technique using an adhesive tape as a support for temporarily fixing such a chip is known.

JP 2001-308116 A JP 2001-313350 A

FIG. 2 shows a method for manufacturing a substrate-less semiconductor device, and the problems are described below.
A structure shown in (a) in which a plurality of chips 1 are attached to a heat-resistant adhesive tape 2 for manufacturing a semiconductor device having adhesive layers on both sides, and the heat-resistant adhesive tape 2 for manufacturing a semiconductor device is fixed to a substrate 3. To do. Alternatively, a heat-resistant adhesive tape 2 for manufacturing a semiconductor device is attached on the substrate 3, and the chip 1 is fixed to obtain a structure shown in (a).

Next, a plurality of chips are sealed with a sealing resin 4 from above the chip 1 having the structure shown in (a), and shown in (b).
And as shown in (c), the heat resistant adhesive tape 2 for manufacturing a semiconductor device and the substrate 3 are further integrated, and a plurality of chips 1 sealed with the sealing resin 4 are separated, or the sealing resin 4 is formed by peeling off the chip 1 and the heat-resistant adhesive tape 2 for manufacturing a semiconductor device 2 from the substrate 3 and further removing only the heat-resistant adhesive tape 2 for manufacturing a semiconductor device. A plurality of chips 1 sealed by 4 are obtained.

The side of the plurality of chips 1 sealed with the sealing resin 4 on which the heat-resistant adhesive tape 2 for manufacturing a semiconductor device is provided and the surface of the chip 1 is exposed, The electrode 5 is formed at a required position to obtain the structure shown in (d).
To this structure, a dicing tape 8 provided with a dicing ring 7 is bonded to the sealing resin side as necessary, and a plurality of chips 1 sealed with the sealing resin 4 for a dicing process are fixed. . As shown in (e), dicing is performed by a dicing blade 6, and finally, a plurality of substrate-less packages in which a plurality of chips are sealed with resin as shown in (f) are obtained.

In such a method, the chip is not held by the pressure of the sealing resin and is displaced from a specified position, or the pressure of the sealing resin is too strong as shown in FIG. The chip 1 may be embedded in the heat resistant adhesive tape 2 for manufacturing a semiconductor device because the heat resistant adhesive tape 2 is too soft or both. In such a case, the chip 1 cannot be completely sealed with the sealing resin 4, and the chip may protrude from the surface of the resin, resulting in a state where the sealing resin surface and the chip surface have a step (standoff). There is.
Alternatively, if some of the chips 1 are protruding from the resin surface, the height of the surface of the electrode formed after that will vary, so when connecting the chip to the circuit board, the connection is ensured. It becomes difficult to make.

  When the chip 1 is not embedded in the heat-resistant adhesive tape 2 for manufacturing a semiconductor device, as shown in FIG. 3 (a), the chip does not jump out from the cured sealing resin surface, and thereafter The electrodes can be reliably formed between the chips, and each electrode can be reliably connected to a predetermined location on the circuit board even when the package is provided on the circuit board.

In addition, when sealing with resin, the heat resistant adhesive tape 2 for manufacturing semiconductor devices shown in FIG. 4A is formed by the expansion and elasticity of the base material layer and the adhesive layer of the heat resistant adhesive tape 2 for manufacturing semiconductor devices. By deforming in the planar direction as shown in FIG. 4B, the position of the chip 1 placed on the heat-resistant adhesive tape 2 for manufacturing a semiconductor device may move. Further, the chip may move depending on the pressure with which the resin used for sealing is filled.
As a result, when an electrode is provided on the chip 1, the relative positional relationship between the chip and the electrode is different from that planned, and when the chip 1 is sealed with resin and diced, a dicing process is performed. Thus, the dicing line based on the position of the chip 1 determined in advance differs from the dicing line required depending on the actual position of the chip 1.
As a result, each package obtained by dicing has a variation in the position of the sealed chip, and subsequent processes cannot be smoothly performed, and a package that is not sufficiently sealed is obtained. .

When the heat-resistant adhesive tape 2 for manufacturing a semiconductor device is peeled from the chip sealed with resin, the sealing may be performed depending on the nature of the adhesive formed on the chip side of the heat-resistant adhesive tape 2 for manufacturing a semiconductor device. There is a concern that the adhesive strength becomes strong due to the curing or heat of the resin, and the peelability becomes difficult due to the heavy peelability, adhesive residue as shown in FIG. 5 occurs, or peeling electrification occurs.
If it becomes difficult to peel, productivity will be reduced because it takes time, and if the adhesive residue 9 is generated, it becomes impossible to carry out the subsequent steps such as electrode formation. May cause inconvenience.

  Thus, in the method of manufacturing a substrate-less semiconductor package using the heat-resistant adhesive tape for manufacturing a semiconductor device as a support for temporary fixing, the chip is not held by the pressure at the time of resin sealing and is shifted from a specified position. The chip is embedded in the pressure-sensitive adhesive layer due to pressure when the chip is attached or resin-sealed, and a step (standoff) in which the chip surface becomes convex from the sealing resin occurs. Moreover, when peeling an adhesive tape, a package may be damaged by hardening of sealing resin, or strong adhesion with respect to the chip surface by heat.

The present invention is a heat-resistant adhesive tape for manufacturing a semiconductor device, which is used by adhering a substrateless semiconductor chip that does not use a metal lead frame, and the adhesive tape is a base material layer And a pressure-sensitive adhesive layer, a support film having a glass transition temperature exceeding 180 ° C. is used for the base material layer, and a pressure-sensitive adhesive having an elastic modulus at 180 ° C. of 1.0 × 10 ⁵ Pa or more is used for the pressure-sensitive adhesive layer. Using the layer, the support film may have a linear expansion coefficient of 0 × 10 ⁻⁵ / ° C. or less from 0 ° C. to 180 ° C., and the heat-resistant adhesive tape for manufacturing a semiconductor device is from 0 ° C. to silicon wafer The 180 ° peel adhesive strength at at least one point in the temperature range of 180 ° C. may be 50 mN / 20 mm or more, and the pressure-sensitive adhesive layer may have a weight loss at 180 ° C. of 3.0% by weight or less. Semiconductor It is a manufacturing method of a semiconductor device using a heat-resistant adhesive tape for device manufacture.

  Adhesive tape for temporarily fixing chips used in substrate-less semiconductor package manufacturing methods that do not use metal lead frames (for example, WLP manufacturing methods, etc.), and keeps the chips from moving during the resin sealing process Thus, it is possible to provide a heat-resistant pressure-sensitive adhesive tape for manufacturing a semiconductor device that has a small deviation from a specified position, a small stand-off due to embedding in the pressure-sensitive adhesive layer, and can be easily peeled after use.

Process for producing substrate-less BGA using heat-resistant adhesive tape for semiconductor device production of the present invention Schematic diagram of boardless package manufacturing method Diagram comparing the case where the chip does not stand off Figure of heat-resistant adhesive tape for semiconductor device manufacturing with chips deformed by heat during sealing with sealing resin The figure which produces electrification and adhesive residue when peeling the heat resistant adhesive tape for semiconductor device manufacture. Sectional drawing of the heat resistant adhesive tape for semiconductor device manufacture of this invention

  The present inventors have intensively studied to solve the above-mentioned problems, and when sealing the chip, the sealing resin is heated to be cured (generally 150 ° C. to 180 ° C.). At this time, the chip is fixed. When a base material having a glass transition temperature higher than the heating temperature is used as the base material of the pressure-sensitive adhesive tape, the linear expansion coefficient of the pressure-sensitive adhesive tape is small even at a heating temperature that is higher than the glass transition temperature. As a result, it has been clarified that the attached chip can be prevented from being inferior in position accuracy without deviating from the designated position.

  In addition, as represented by uniaxial and biaxially stretched base materials, the elongation caused by stretching in the tape manufacturing process begins to shrink at a temperature higher than the glass transition temperature, and the shrinkage occurring above this glass transition point is There is often a difference in shrinkage between the MD direction and the TD direction. However, if the glass transition temperature of the tape is higher than the heating temperature at the time of sealing with the resin of the chip, the tape will not shrink, so the position of the attached chip does not deviate from the specified position. There is no madness.

For this reason, when resin-sealing a substrate-less semiconductor chip that does not use a metal lead frame, the glass transition temperature of the base material layer used for the heat-resistant adhesive tape for manufacturing a semiconductor device used by being attached is 180. By using a base material layer that is not lower than ° C., the positional accuracy of the chip can be improved. Furthermore, if the linear expansion coefficient up to 180 ° C. of the base material layer is 3.0 × 10 ⁻⁵ / ° C. or less, the deviation from the designated position of the stuck chip due to the expansion of the base material layer can be further reduced. It becomes possible.

By setting the elastic modulus at 180 ° C. of the pressure-sensitive adhesive layer to 1.0 × 10 ⁵ Pa or more, the chip is embedded in the pressure-sensitive adhesive layer due to pressure when the chip is attached or resin-sealed, Accordingly, the step (standoff) where the chip surface is convex can be made smaller than the sealing resin. Furthermore, since it is necessary to stick the chip to the adhesive tape and hold it firmly, the 180 ° peel adhesive strength at least at one point in the temperature range of 0 ° C. to 180 ° C. with respect to the silicon wafer to which the adhesive tape is attached is 50 mN / 20 mm or more. It is necessary to

  When the sealed adhesive tape is peeled off, the package may be damaged by hardening of the sealing resin or strong adhesion to the chip surface by heat. In particular, since the resin is cured on the pressure-sensitive adhesive layer, the adhesiveness to the resin tends to increase. Therefore, at least at one point in the temperature range of 0 ° C. to 180 ° C. with respect to the sealing material cured on the pressure-sensitive adhesive tape. If the 180 ° peel adhesive strength is 20 N / 20 mm or less, the adhesive tape can be peeled without damage to the package.

  In the pressure-sensitive adhesive layer, when the package is contaminated with gas generated from the pressure-sensitive adhesive tape in the process of heat-curing the sealing resin, the package reliability may be inferior, such as poor plating at the time of rewiring. For this reason, when the weight reduction amount at 180 ° C. is 3.0% by weight or less, the package can be used for this application without impairing the reliability of the package.

[Heat-resistant adhesive tape for semiconductor device manufacturing]
Hereinafter, embodiments of the heat-resistant adhesive tape 2 for manufacturing a semiconductor device and the semiconductor device of the present invention will be specifically described with reference to the drawings. First, the heat resistant adhesive tape 2 for manufacturing a semiconductor device of the present invention will be described. As shown in the sectional view of FIG. 6, the heat-resistant adhesive tape 2 for manufacturing a semiconductor device of the present invention has a base material layer 11 and an adhesive layer 12. Moreover, you may have an adhesive layer in order to fix to a metal substrate etc. on the opposite side of the surface to fix and seal a chip | tip like the adhesive layer 13 for board | substrate fixation. The composition of both pressure-sensitive adhesive layers used for this is not particularly limited as long as the substrate and the tape can be firmly fixed in each step of chip bonding, sealing material injection, and sealing material curing. Anything can be used.
Moreover, in order to protect the both adhesive layer surfaces of the heat-resistant adhesive tape 2 for manufacturing a semiconductor device before use, the release sheet 10 may be adhered to the surfaces of these adhesive layers.

[Base material layer]
In the base material layer 11 used in the present invention, the type of the base material layer is not particularly limited, but when a base material having a glass transition temperature at a temperature lower than the heating temperature for curing the sealing resin is used, In the temperature region higher than the glass transition temperature, the linear expansion coefficient in the temperature region lower than the glass transition temperature is larger, and the accuracy from the specified position of the attached chip is inferior.

  In addition, in the case of a uniaxially or biaxially stretched substrate, the elongation caused by stretching starts at a temperature higher than the glass transition temperature, and shrinkage starts at a temperature higher than the glass transition temperature, which is also less accurate from the specified position of the attached chip. End up. For this reason, when resin-sealing a substrate-less semiconductor chip that does not use a metal lead frame, the glass transition temperature of the base material layer 11 used for the heat-resistant adhesive tape 2 for manufacturing a semiconductor device used by being attached. When the temperature exceeds 180 ° C., the positional accuracy of the chip can be improved. For this reason, a heat-resistant substrate is preferable, for example, a plastic substrate such as polyester, polyamide, polyphenylene sulfide, polyetherimide, polyimide, polyamideimide, polysulfone, polyetherketone, and a porous substrate thereof, glassine paper, fine paper, It is preferably selected from a paper substrate such as Japanese paper, a nonwoven fabric substrate such as cellulose, polyamide, polyester, and aramid, a metal film substrate such as aluminum foil, SUS foil, and Ni foil. The “glass transition point” is a peak of loss tangent (tan δ) confirmed in the DMA method (tensile method) under the conditions of a heating rate of 5 ° C./min, a sample width of 5 mm, a distance between chucks of 20 mm, and a frequency of 10 Hz. Means the temperature.

Further, if the linear expansion coefficient of the substrate up to 180 ° C. is 3.0 × 10 ⁻⁵ / ° C. or less, preferably 2.0 × 10 ⁻⁵ / ° C. or less, the chip stuck by expansion of the substrate is used. It is possible to further reduce the deviation from the designated position. For this reason, as a kind of base material, it has heat resistance and a polyimide with a comparatively small linear expansion coefficient is more preferable.
The thickness of the substrate is usually 5 to 200 μm, preferably 10 to 150 μm, and more preferably 20 to 100 μm. When the thickness is less than 5 μm, when the heat-resistant adhesive tape 2 for manufacturing semiconductor devices is peeled off after the sealing material is cured, the heat-resistant adhesive tape 2 for manufacturing semiconductor devices may be cut off and cannot be peeled off. become.

[Adhesive layer]
The pressure-sensitive adhesive layer 12 used in the present invention is not particularly limited as long as it has heat resistance.
Specifically, for example, various pressure-sensitive adhesives such as an acrylic pressure-sensitive adhesive, a silicone pressure-sensitive adhesive, a rubber pressure-sensitive adhesive, and an epoxy pressure-sensitive adhesive capable of bonding a chip to a sheet at room temperature are used. In addition, when the chip is bonded to the sheet, it may be bonded by heating, not at normal temperature, so that a heat-resistant thermoplastic polyimide resin, polyetherimide resin, polyetheramide resin, polyamideimide resin, Various adhesives such as polyether amide imide resins, block copolymers such as styrene-ethylene butylene-styrene (SEBS), styrene-butadiene-styrene (SBS), styrene-isobutadiene-styrene (SIS), and fluorine compound-containing resins Used.
Among these, from the viewpoint of heat resistance and cost, a silicone pressure-sensitive adhesive or an acrylic pressure-sensitive adhesive is preferable, and a silicone pressure-sensitive adhesive is more preferable.
Examples of the silicone-based pressure-sensitive adhesive include those containing dimethylpolysiloxane.

As an acrylic adhesive, what consists of an acrylic copolymer obtained from copolymerization of the monomer which contains an alkyl (meth) acrylate at least is mentioned, for example. In addition, in this specification, alkyl (meth) acrylate means alkyl acrylate and / or alkyl methacrylate.
Examples of the alkyl (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isoamyl (meth) acrylate, n-hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl ( Examples include meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, and dodecyl (meth) acrylate. Among them, copolymerization of acrylic acid monomer and 2-ethylhexyl (meth) acrylate monomer, copolymerization of methyl and / or ethyl (meth) acrylate, acrylic acid monomer and 2-ethylhexyl (meth) acrylate monomer preferable.

Examples of the silicone pressure-sensitive adhesive include an addition polymerization type silicone resin layer crosslinked with an organopolysiloxane structure, preferably a dimethylpolysiloxane structure, an unsaturated group such as a vinyl group, or a SiH group, and cured with a platinum-based catalyst, or BPO. A silicone pressure-sensitive adhesive obtained by curing with an organic peroxide can be used. However, an addition polymerization type is preferable from the viewpoint of heat resistance. In this case, it is possible to adjust the crosslinking density according to the density of the unsaturated group in consideration of the obtained adhesive strength.
For the formation of this silicone resin layer, heating or the like is required for addition polymerization.

The pressure-sensitive adhesive layer may contain a crosslinking agent as required.
Examples of such a crosslinking agent include an isocyanate crosslinking agent, an epoxy crosslinking agent, an aziridine compound, a chelate crosslinking agent, and the like.
Although content of a crosslinking agent is not specifically limited, For example, when using an acrylic adhesive, 0.1-20 weight part is preferable with respect to 100 weight part of acrylic polymers, and 0.5-10 weight part is More preferred.

The pressure-sensitive adhesive layer 12 has an elastic modulus at 180 ° C. of 1.0 × 10 ⁵ Pa or more, preferably 2.0 × 10 ⁵ Pa or more, more preferably 3.0 × 10 ⁵ Pa or more. It is possible to reduce the step (standoff) where the chip surface is convex than the sealing resin accompanying the embedding of the chip into the pressure-sensitive adhesive layer 12 caused by the pressure at the time of pasting or resin sealing. When the elastic modulus at 180 ° C. is 1.0 × 10 ⁵ Pa or less, the pressure-sensitive adhesive layer 12 is easily deformed by the pressure of resin sealing, and the standoff is increased. When the standoff becomes large, there is a process for rewiring the package after this. However, if the step is large, the thickness becomes thicker than the thickness of the wiring, and conduction is not achieved, resulting in a failure.

  Further, since the chip needs to be bonded to the sheet and firmly held, 180 ° peel adhesion at least at one point in the temperature range of 0 ° C. to 180 ° C. with respect to the silicon wafer bonded with the heat resistant adhesive tape 2 for manufacturing semiconductor devices. The force is required to be 50 mN / 20 mm or more, preferably 100 mN / 20 mm or more, more preferably 200 mN / 20 mm or more. When it is 50 mN / 20 mm or less, the adhesiveness to the chip becomes insufficient, and the chip position shifts due to peeling during handling or pressure during resin sealing.

  When the heat-resistant adhesive tape 2 for manufacturing a semiconductor device after sealing is peeled off, the package may be damaged due to hardening of the sealing material or strong adhesion to the chip surface due to heat. In particular, the adhesive layer 12 Since the resin is cured above, the adhesiveness to the resin tends to increase. For this reason, the 180 ° peel adhesive strength at least at one point in the temperature range of 0 ° C. to 180 ° C. with respect to the sealing resin cured on the heat resistant adhesive tape 2 for manufacturing a semiconductor device is 20 N / 20 mm or less, preferably 15 N / 20 mm or less. More preferably, if it is 10 N / 20 mm or less, the package is not damaged and the heat-resistant adhesive tape 2 for manufacturing a semiconductor device can be peeled off. In the case of 20 N / 20 mm or more, the cured sealing material cannot withstand the peel strength of the heat-resistant adhesive tape 2 for manufacturing a semiconductor device, and breakage occurs. Also. When peeling the heat-resistant adhesive tape 2 for manufacturing semiconductor devices, it is preferable to peel at normal temperature from the viewpoint of workability. However, if the adhesive at normal temperature is large, a normal pressure-sensitive adhesive is more adhesive in a high temperature atmosphere. Since the peel strength tends to be small, the package can be prevented from being damaged by peeling in a heated atmosphere.

  In the adhesive layer 12, if the package is contaminated by the gas generated from the heat-resistant adhesive tape 2 for manufacturing a semiconductor device in the process of heat-curing the sealing resin, the reliability of the package such as defective plating at the time of rewiring is obtained. May be inferior. For this reason, when the amount of weight loss at 180 ° C. is 3.0% by weight or less, preferably 2.0% by weight or less, it can be used for this application without impairing the reliability of the package.

  The pressure-sensitive adhesive layer 12 is usually used in the art such as a plasticizer, a pigment, a dye, an anti-aging agent, an antistatic agent, and a filler added to improve the physical properties (eg, elastic modulus) of the pressure-sensitive adhesive layer 12. Various additives used may be added. The content is not particularly limited as long as appropriate tackiness is not impaired.

  The heat-resistant pressure-sensitive adhesive tape 2 for manufacturing a semiconductor device of the present invention is obtained by providing a pressure-sensitive adhesive layer 12 having a thickness of usually 1 to 50 μm on a base material layer, which is manufactured as described above. Use as

[Adhesive layer for fixing substrates]
The adhesive used for the substrate fixing adhesive layer 13 may be the same resin as the resin used for the pressure-sensitive adhesive layer 12.
Furthermore, when the heat-resistant adhesive tape 2 for manufacturing semiconductor devices is peeled from the substrate, the peeling process from the substrate is heated by, for example, adding a foaming agent that foams by heating to the adhesive layer 13 for fixing the substrate. Can be performed. In addition, the adhesive force of the substrate fixing adhesive layer 13 is reduced by curing the substrate fixing adhesive layer 13 by preliminarily mixing a component that crosslinks with, for example, ultraviolet rays instead of the heating means. Is also possible.
By performing such treatment, the adhesive force of the substrate fixing adhesive layer 13 to the substrate or the base material layer is lowered, and then the heat-resistant adhesive tape 2 for manufacturing a semiconductor device or the base material layer is attached to the substrate or the substrate. The chip that has been peeled off from the fixing adhesive layer 13 and sealed with resin is separated from the substrate.

[Smooth release sheet]
The smooth release sheet 10 is a sheet formed by forming a release agent layer on one side of a base film, and exposes the adhesive layer on each side before using the heat-resistant adhesive tape for manufacturing a semiconductor device of the present invention. Therefore, the sheet is peeled off.
The release agent layer can be appropriately selected from known release agent layers such as known long-chain alkyl group-based, fluororesin-based, and silicone resin-based depending on the pressure-sensitive adhesive in contact therewith.

  As the base film, known ones can be used, for example, polyetheretherketone, polyetherimide, polyarylate, polyethylene naphthalate, polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film. , Vinyl chloride copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film, ethylene-vinyl acetate copolymer film, ionomer resin film, ethylene- (meth) acrylic acid copolymer film, ethylene- (meth) Acrylic ester copolymer film, polystyrene film, and plastic film such as polycarbonate film can be selected. That.

  Usable release agents include fluorinated silicone resin release agents, fluororesin release agents, silicone resin release agents, polyvinyl alcohol resins, polypropylene resins, and long-chain alkyl compounds. It is a layer selected and contained according to the resin of the agent layer.

[Method for producing heat-resistant adhesive tape for semiconductor device production]
The heat-resistant adhesive tape 2 for manufacturing a semiconductor device of the present invention can be manufactured by a general manufacturing method. For example, a composition that forms a pressure-sensitive adhesive layer such as a silicone pressure-sensitive adhesive layer is dissolved in a predetermined solvent to prepare a coating solution, and the coating solution is used as a heat-resistant pressure-sensitive adhesive for manufacturing a semiconductor device on a base material layer. After coating so as to have a layer structure of the tape, the coating layer is sequentially heated and dried under predetermined conditions.
In addition, a single film may be prepared by casting a pressure sensitive adhesive such as a silicone pressure sensitive adhesive on a peelable film, etc., and these may be laminated on a base material. You may combine the lamination | stacking by a film. Here, the solvent is not particularly limited, but a ketone solvent such as methyl ethyl ketone is preferably used in consideration of the necessity of improving the solubility of the constituent material of the pressure-sensitive adhesive layer. In addition, a method of forming a pressure-sensitive adhesive tape by laminating a pressure-sensitive adhesive layer by repeating the steps of applying the constituent material as an aqueous dispersion solution, applying the solution onto a base material layer, and drying by heating is also included.

[How to use heat-resistant adhesive tape for semiconductor device manufacturing]
The heat-resistant adhesive tape 2 for manufacturing a semiconductor device is used in the steps of FIGS.

As an example, an outline of a process for manufacturing a substrate-less BGA is shown.
FIG. 1 shows a method for manufacturing a semiconductor device in which a substrate-less semiconductor chip using a heat-resistant adhesive tape 2 for manufacturing a semiconductor device according to the present invention is sealed with a resin.
First, in the step (a), the heat-resistant adhesive tape 2 for manufacturing a semiconductor device of the present invention is stuck and fixed on the substrate 3, and in the step (b), a semiconductor chip is provided on the substrate at an arbitrary interval. Stick and fix. In the subsequent step (c), sealing is performed with a sealing resin 4 so as to fill the fixed semiconductor chip.
In the step (d), the plurality of semiconductor chips sealed in this way are peeled off by heating and peeling from the substrate together with the sealing resin and the heat-resistant adhesive tape 2 for manufacturing a semiconductor device, and subsequently in the step (e). Then, the heat-resistant adhesive tape 2 for manufacturing a semiconductor device of the present invention is peeled off from the resin-encapsulated semiconductor chip.
Further, in the step (f), wiring leads and the like are formed by performing various pattern printings between the semiconductor chips and on the surface of the semiconductor chip. In the subsequent step (g), the wiring leads are formed on the chip surface. Bumps that are spherical connection electrodes are formed.
Finally, in the step (h), each semiconductor device provided with individual semiconductor chips can be obtained by cutting the sealing resin portion between the semiconductor chips by dicing or the like.

[Semiconductor chip bonding process]
Hereinafter, a specific description will be given based on FIG.
The heat-resistant adhesive tape 2 for manufacturing a semiconductor device is fixed on the substrate by adhesion or the like so that the adhesive layer side is exposed on the upper surface.
A predetermined semiconductor chip to be sealed with resin is placed on and bonded to the target arrangement, and fixed on the adhesive layer of the heat-resistant adhesive tape 2 for manufacturing semiconductor devices. The structure, shape, size, etc. of the semiconductor chip at that time are not particularly limited.

[Sealing process]
The resin used in the sealing step in which the heat-resistant adhesive tape 2 for manufacturing a semiconductor device of the present invention is used may be a known sealing resin such as an epoxy resin. The melting temperature and curing temperature of the powdered resin and the curing temperature of the liquid resin are selected in consideration of the heat resistance of the heat-resistant adhesive tape 2 for manufacturing a semiconductor device, but the heat-resistant adhesive tape for manufacturing a semiconductor device of the present invention. 2 has heat resistance at the melting temperature and curing temperature of a normal sealing resin.
The sealing step is performed in the mold with the above resin for chip protection, for example, at 170 to 180 ° C.
Thereafter, after the heat-resistant adhesive tape 2 for manufacturing a semiconductor device is peeled off, post mold curing is performed.

[Peeling process]
After the chip fixed to the heat-resistant adhesive tape 2 for manufacturing semiconductor devices on the substrate is sealed with resin, at 200 to 250 ° C. for 1 to 90 seconds (hot plate, etc.) or 1 to 15 minutes (hot air dryer) Etc.), the fixing of the heat-resistant adhesive tape 2 for manufacturing a semiconductor device to the substrate with an adhesive or the like is released, and the heat-resistant adhesive tape 2 for manufacturing a semiconductor device and the substrate are peeled off.
Next, the heat-resistant adhesive tape for manufacturing semiconductor devices is peeled from the layer formed by sealing the chip with resin.
In addition, the heat-resistant adhesive tape 2 for manufacturing semiconductor devices and the substrate are integrated without being separated, and a method of separating a plurality of chips sealed with a sealing resin from the adhesive layer of the heat-resistant adhesive tape for manufacturing semiconductor devices is adopted. You may do it.

[Electrode formation process]
Next, on the side where one side of the chip of the layer formed by sealing the chip with resin is exposed on the surface, on the side where the heat-resistant adhesive tape 2 for manufacturing a semiconductor device is laminated, by a method such as screen printing, Electrodes are formed at predetermined locations on each chip. A known material can be used as the electrode material.

[Dicing process]
A layer formed by sealing a chip with a resin is preferably fixed to a dicing sheet provided with a dicing ring, and then separated into individual packages using a dicing blade used in a normal dicing process. At this time, if each chip does not exist at a predetermined position, in addition to inaccurate electrode formation, if the position of the chip of each package is inaccurate or severe, dicing is performed during dicing. There is a possibility that the blade contacts the chip.
When the heat-resistant adhesive tape 2 for manufacturing a semiconductor device according to the present invention is used, the position of the chip can be prevented from being shifted in the resin sealing process, so that the dicing process can be carried out smoothly without any such trouble. Thus, a package in which the chip is accurately located in the sealing resin is obtained.
Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.

Example 1
A polyimide film having a thickness of 25 μm (Toray DuPont, Kapton 100H (trade name), linear expansion coefficient 2.7 × 10 ⁻⁵ / ° C., Tg 402 ° C.) was used as a base layer, and on one side of the base layer, Toray・ To 100 parts of silicone adhesive “SD-4586” manufactured by Dow Corning Silicone, 3 parts of platinum catalyst and toluene were added and dispersed uniformly, and then coated and dried to give an adhesive layer with a thickness of about 6 μm. A heat resistant adhesive tape having The storage elastic modulus at 180 ° C. of the pressure-sensitive adhesive was 4.0 × 10 ⁵ Pa. The adhesive strength of this sheet at 23 ° C. and a silicon wafer peeling angle of 180 ° was 250 mN / 20 mm width. Moreover, the adhesive force in the peeling angle 180 degrees to sealing resin after resin sealing of this adhesive tape was 3.1 N / 20mm at 23 degreeC.

The weight loss of the pressure-sensitive adhesive at 180 ° C. for 1 hour was 0.1%, and the heat shrinkage of the base material layer after heating at 180 ° C. for 3 hours was 0.35%.
A 5 mm x 5 mm Si wafer chip is placed on this heat-resistant adhesive tape and sprinkled with powdered epoxy-based sealing resin (Nitto Denko: GE-7470LA), temperature 175 ° C, pressure 3.0 kg / Molded in cm ² for 2 min. Thereafter, the resin was accelerated (post mold cure) by heating at 150 ° C. for 60 min to produce a package.

  After manufacturing the package, the deviation distance from the initial position of the chip was measured with a digital microscope. Further, the stand-off was obtained by cutting the package and measuring the cross section with a digital microscope. Moreover, damage of the package after peeling an adhesive tape was confirmed visually.

Example 2
The same method as in Example 1 except that a 25 μm-thick polyimide film (Kaneka, Apical 25 NPI (trade name), linear expansion coefficient 1.7 × 10 ⁻⁵ / K, Tg 421 ° C.) was used as the base material layer. An adhesive tape was obtained. The adhesive strength of this sheet at 23 ° C. and a silicon wafer peeling angle of 180 ° was 260 mN / 20 mm width. Moreover, the adhesive force in the peeling angle 180 degrees to sealing resin after resin sealing of this adhesive tape was 3.3 N / 20mm at 23 degreeC.
The weight loss after the adhesive was heated at 180 ° C. for 3 hours was 0.1%, and the thermal shrinkage of the base material layer after further heating at 180 ° C. for 3 hours was 0.11%. .

Comparative Example 1
The same method as in Example 1 except that 25 μm thick polyphenyl sulfide (Toray, Torelina 3030 (trade name), linear expansion coefficient 3.2 × 10 ⁻⁵ / K, Tg 127 ° C.) was used as the base material layer. The adhesive tape was obtained. The adhesive strength of this sheet at 23 ° C. and a silicon wafer peeling angle of 180 ° was 260 mN / 20 mm width. Moreover, the adhesive force in the peeling angle 180 degrees to sealing resin after resin sealing of this adhesive tape was 3.0 N / 20mm at 23 degreeC.
The weight loss after the adhesive was heated at 180 ° C. for 3 hours was 0.1%, and the thermal contraction rate of the base material layer after further heating at 180 ° C. for 3 hours was 1.9%. .

Comparative Example 2
The same as in Example 1 except that an adhesive obtained by copolymerizing 50 parts of butyl acrylate, 50 parts of ethyl acrylate and 5 parts of acrylic acid as an adhesive was added with 3 parts of an isocyanate-based crosslinking agent as a crosslinking agent. The heat resistant adhesive tape was produced by the method. The storage elastic modulus of this pressure-sensitive adhesive at 180 ° C. was 0.2 × 10 ⁵ Pa. The adhesive strength of this sheet at 23 ° C. and a silicon wafer peeling angle of 180 ° was 3000 mN / 20 mm width. Moreover, the adhesive force in the peeling angle 180 degrees to sealing resin after resin sealing of this adhesive tape was 26 N / 20mm at 23 degreeC.
The weight loss after heating at 180 ° C. for 3 hours is 0.5%, and the heat shrinkage of the base material layer after heating at 180 ° C. for 3 hours is 0.35%. The 5% weight loss temperature was 270 ° C., and the heat shrinkage of the base material layer after further heating at 180 ° C. for 3 hours was 0.35%.
These results are shown in Table 1 below.

In Examples 1 and 2, the chip is firmly held when a substrate-less semiconductor package that does not use a lead frame is manufactured. The chip is less displaced from the specified position and embedded in the adhesive layer. The stand-off due to was small, and light peeling was possible without damaging the package after use.
In Comparative Example 1, since the glass transition temperature of the base material layer is as low as 127 ° C. and the thermal shrinkage rate is large, the chip shift distance after heating at 180 ° C. for 3 hours is large, and is obtained in the subsequent electrode formation and dicing process. A stable semiconductor device cannot be obtained.
In Comparative Example 2, the storage elastic modulus of the pressure-sensitive adhesive layer of the heat-resistant pressure-sensitive adhesive tape after curing of the sealing resin is low, so that a large stand of 2.5 μm is obtained when the chip is embedded in the pressure-sensitive adhesive layer in the resin sealing process. The package was damaged at the time of peeling because off occurred and the adhesive strength of the adhesive layer was high.

  Based on the above results, the chip is securely held during the resin sealing process, the deviation of the chip from the specified position is small, the stand-off due to embedding in the adhesive layer is small, and light peeling after use A heat-resistant adhesive tape for manufacturing semiconductor devices was obtained.

1: Chip 2: Heat-resistant adhesive tape 3 for manufacturing semiconductor device 3: Substrate 4: Sealing resin 5: Electrode 6: Dicing blade 7: Dicing ring 8: Dicing tape 9: Residue remaining 10: Smooth release sheet 11: Base material Layer 12: Adhesive layer 13: Substrate fixing adhesive layer 14: Terminal

Claims (6)

A base material layer having a glass transition temperature exceeding 180 ° C., which is a heat-resistant adhesive tape for manufacturing a semiconductor device, which is used by adhering when a substrateless semiconductor chip not using a metal lead frame is sealed with a resin. A pressure-sensitive adhesive layer containing an addition polymerization type silicone resin cured with a platinum-based catalyst and having an elastic modulus at 180 ° C. of 1.0 × 10 ⁵ Pa or more is provided on one side or both sides. A heat-resistant adhesive tape for manufacturing semiconductor devices. 2. The heat-resistant adhesive tape for manufacturing a semiconductor device according to claim 1, wherein the base material layer has a linear expansion coefficient of 3.0 × 10 ⁻⁵ / ° C. or less at 0 ° C. to 180 ° C.   3. The semiconductor according to claim 1, wherein the heat-resistant adhesive tape for manufacturing a semiconductor device has a 180 ° peel adhesive strength of 50 mN / 20 mm or more at least at one point in a temperature range of 0 ° C. to 180 ° C. with respect to a silicon wafer. Heat resistant adhesive tape for device manufacturing.   2. The 180 [deg.] Peel adhesive strength at least at one point in the temperature range of 0 [deg.] C. to 180 [deg.] C. with respect to the sealing resin cured on the adhesive tape is 20 N / 20 mm or less. The heat resistant adhesive tape for semiconductor device manufacture in any one of -3.   5. The heat-resistant adhesive tape for manufacturing a semiconductor device according to claim 1, wherein the adhesive layer has a weight loss at 180 ° C. of 3.0% by weight or less.   A method for manufacturing a semiconductor device, comprising: sealing a substrate-less semiconductor chip using a heat-resistant adhesive tape for manufacturing a semiconductor device according to any one of claims 1 to 5 without using a metal lead frame.