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JP5294629B2 - 複数のレーザビームスポットを使用する半導体構造加工 - Google Patents

複数のレーザビームスポットを使用する半導体構造加工 Download PDF

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Publication number
JP5294629B2
JP5294629B2 JP2007516763A JP2007516763A JP5294629B2 JP 5294629 B2 JP5294629 B2 JP 5294629B2 JP 2007516763 A JP2007516763 A JP 2007516763A JP 2007516763 A JP2007516763 A JP 2007516763A JP 5294629 B2 JP5294629 B2 JP 5294629B2
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JP
Japan
Prior art keywords
laser
link
laser beam
spot
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007516763A
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English (en)
Japanese (ja)
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JP2008503877A (ja
Inventor
ケリー ジェイ ブルランド、
ホー ワイ ロー、
ブライアン ダブリュ ベアード、
フランク ジー エヴァンス、
リチャード エス ハリス、
ユンロン サン、
スティーヴン エヌ スワリンゲン、
Original Assignee
エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/051,261 external-priority patent/US7633034B2/en
Priority claimed from US11/052,000 external-priority patent/US7923306B2/en
Priority claimed from US11/052,014 external-priority patent/US7629234B2/en
Priority claimed from US11/051,262 external-priority patent/US7687740B2/en
Priority claimed from US11/051,500 external-priority patent/US8148211B2/en
Priority claimed from US11/051,263 external-priority patent/US7935941B2/en
Priority claimed from US11/051,265 external-priority patent/US7435927B2/en
Application filed by エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド filed Critical エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
Publication of JP2008503877A publication Critical patent/JP2008503877A/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
JP2007516763A 2004-06-18 2005-06-16 複数のレーザビームスポットを使用する半導体構造加工 Expired - Fee Related JP5294629B2 (ja)

Applications Claiming Priority (19)

Application Number Priority Date Filing Date Title
US58091704P 2004-06-18 2004-06-18
US60/580,917 2004-06-18
US11/052,000 US7923306B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots
US11/052,014 US7629234B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US11/051,500 2005-02-04
US11/051,958 US7425471B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US11/051,263 2005-02-04
US11/051,262 US7687740B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US11/052,014 2005-02-04
US11/051,500 US8148211B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US11/051,263 US7935941B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US11/051,261 US7633034B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US11/051,265 2005-02-04
US11/051,265 US7435927B2 (en) 2004-06-18 2005-02-04 Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US11/051,262 2005-02-04
US11/051,261 2005-02-04
US11/051,958 2005-02-04
US11/052,000 2005-02-04
PCT/US2005/021406 WO2006009818A2 (fr) 2004-06-18 2005-06-16 Traitement de structure a semiconducteur au moyen de spots a faisceaux laser multiples

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012035216A Division JP2012138597A (ja) 2004-06-18 2012-02-21 複数のレーザビームスポットを使用する半導体構造加工

Publications (2)

Publication Number Publication Date
JP2008503877A JP2008503877A (ja) 2008-02-07
JP5294629B2 true JP5294629B2 (ja) 2013-09-18

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Family Applications (1)

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JP2007516763A Expired - Fee Related JP5294629B2 (ja) 2004-06-18 2005-06-16 複数のレーザビームスポットを使用する半導体構造加工

Country Status (5)

Country Link
JP (1) JP5294629B2 (fr)
KR (1) KR101257029B1 (fr)
DE (1) DE112005001418T5 (fr)
GB (1) GB2429843B (fr)
WO (1) WO2006009818A2 (fr)

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US8084706B2 (en) * 2006-07-20 2011-12-27 Gsi Group Corporation System and method for laser processing at non-constant velocities
US8278595B2 (en) * 2007-03-16 2012-10-02 Electro Scientific Industries, Inc. Use of predictive pulse triggering to improve accuracy in link processing
DE102007032903A1 (de) * 2007-07-14 2009-01-15 Schepers Gmbh + Co. Kg Verfahren zum Betreiben einer Lasergravureinrichtung
KR101420703B1 (ko) * 2007-09-19 2014-07-23 지에스아이 그룹 코포레이션 고속 빔 편향 링크 가공
US8461478B2 (en) 2009-02-03 2013-06-11 Abbott Cardiovascular Systems, Inc. Multiple beam laser system for forming stents
JP2011092956A (ja) * 2009-10-27 2011-05-12 Fujifilm Corp 光ヘッド装置、及び該光ヘッド装置を用いたレーザ加工方法
US8461479B2 (en) * 2009-12-23 2013-06-11 Electro Scientific Industries, Inc. Adaptive processing constraints for memory repair
JP5901265B2 (ja) * 2011-11-10 2016-04-06 東芝機械株式会社 パルスレーザ加工装置およびパルスレーザ加工方法
US9678350B2 (en) 2012-03-20 2017-06-13 Kla-Tencor Corporation Laser with integrated multi line or scanning beam capability
JP6022223B2 (ja) * 2012-06-14 2016-11-09 株式会社ディスコ レーザー加工装置
JP5940906B2 (ja) * 2012-06-19 2016-06-29 株式会社ディスコ レーザー加工装置
US20170008126A1 (en) * 2014-02-06 2017-01-12 United Technologies Corporation An additive manufacturing system with a multi-energy beam gun and method of operation
JP6218770B2 (ja) * 2014-06-23 2017-10-25 三菱電機株式会社 レーザ加工装置
US10307867B2 (en) 2014-11-05 2019-06-04 Asm Technology Singapore Pte Ltd Laser fiber array for singulating semiconductor wafers
KR101612508B1 (ko) * 2015-02-03 2016-04-14 동서대학교산학협력단 오류 주입 공격을 위한 이중 모드 레이저 프로빙 시스템
CN116213918A (zh) * 2015-09-09 2023-06-06 伊雷克托科学工业股份有限公司 镭射处理设备、镭射处理工件的方法及相关配置
KR101987192B1 (ko) * 2017-06-14 2019-09-30 주식회사 이오테크닉스 가공물 절단 장치
US10615044B1 (en) * 2018-10-18 2020-04-07 Asm Technology Singapore Pte Ltd Material cutting using laser pulses
JP6843219B1 (ja) * 2019-12-25 2021-03-17 浜松ホトニクス株式会社 レーザ加工用光源及びレーザ加工装置
CN115335965B (zh) * 2020-03-24 2025-10-14 东京毅力科创株式会社 基板处理方法和基板处理装置

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JP3353520B2 (ja) * 1995-02-27 2002-12-03 ソニー株式会社 半導体装置
JPH10328873A (ja) * 1997-06-04 1998-12-15 Nikon Corp レーザ加工装置
JPH11245073A (ja) * 1998-03-04 1999-09-14 Nikon Corp レーザ加工装置
US6567219B1 (en) * 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
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JP3935775B2 (ja) * 2002-05-21 2007-06-27 日立ビアメカニクス株式会社 レーザ加工装置
JP4014498B2 (ja) * 2002-12-17 2007-11-28 日立ビアメカニクス株式会社 多軸のレーザ加工機

Also Published As

Publication number Publication date
GB2429843B (en) 2009-07-08
KR101257029B1 (ko) 2013-04-22
DE112005001418T5 (de) 2008-02-21
GB0623283D0 (en) 2007-01-03
KR20070036747A (ko) 2007-04-03
JP2008503877A (ja) 2008-02-07
GB2429843A (en) 2007-03-07
WO2006009818A2 (fr) 2006-01-26
WO2006009818A3 (fr) 2007-03-01

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