JP5024032B2 - Semiconductor device manufacturing apparatus and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, and more particularly to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method for growing a film on a silicon carbide semiconductor substrate.

  As a next-generation semiconductor material, silicon carbide (SiC) is expected in place of current silicon (Si). A semiconductor element using SiC can reduce the element resistance in the ON state to hundreds of times compared to the case of using conventional Si, and is used in a high temperature environment of 200 ° C. or higher. Has the advantage of being able to. Taking advantage of such advantages, for example, it is expected to be used for a power semiconductor element that operates mainly under a high current with a high withstand voltage, which is mainly used in a power conversion device. The spread of hybrid vehicles is also attracting attention. To date, Schottky barrier diodes using SiC as a material are commercially available, such as MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors). Switching devices are also being actively researched.

However, for the production of a semiconductor element using SiC, a technique for producing a semiconductor element using Si can be applied, but there are peculiar difficulties due to the characteristics of SiC.
One of them is epitaxial growth. When epitaxial growth using SiC is performed, a temperature far exceeding the melting point of Si from 1500 ° C. to 1700 ° C. is required. Therefore, a conventional semiconductor element manufacturing apparatus using Si cannot be used due to the problem of heat resistance. For this reason, a unique apparatus applicable to SiC has been developed. In particular, the heat resistance is most problematic in the portion of the rotating shaft that mechanically drives and rotates the susceptor on which the wafer is mounted. That is, since the temperature is high, the rotating shaft cannot withstand the temperature difference between the inside and outside of the furnace and is damaged.

Therefore, a method of rotating the susceptor with the momentum of hydrogen (H) gas flowing in the furnace instead of mechanically rotating the susceptor has become the current mainstream (see, for example, Patent Document 1).
In addition, providing a plurality of gas introduction paths and discharge paths has been studied (see, for example, Patent Document 2).
Japanese translation of PCT publication No. 2003-507319 JP 2006-303152 A

  However, if the wafer mounting area of the susceptor is increased in order to increase the number of processed wafers, it becomes difficult to mechanically rotate the susceptor. In order to rotate with gas, for example, a rotating blade is required, which increases the processing cost of the susceptor.

Similarly, when the susceptor is widened, the heat capacity of the susceptor increases, so that it takes time to raise and lower the temperature, and there is another problem that the throughput of manufacturing the semiconductor device decreases.
Similarly, when the susceptor is widened, there is another problem that the footprint of the apparatus increases and the limited factory site cannot be used effectively.

  The present invention has been made in view of the above points, and provides a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of simultaneously growing a film on a large number of semiconductor substrates without variation in thickness in a space-saving manner. The purpose is to provide.

In order to achieve the above object, a semiconductor device manufacturing apparatus for growing a film on a silicon carbide semiconductor substrate is provided.
The semiconductor device manufacturing apparatus includes an enclosure member, a susceptor that is installed in the enclosure member, is held by a support rod, and a plurality of the susceptors are mounted thereon, and the enclosure member is formed on the enclosure member, Heating the susceptor formed in the enclosure member, the introduction path for introducing gas into the enclosure member, the discharge path for exhausting the gas formed in the enclosure member facing the introduction path, and the enclosure member The heating unit and a heat insulating material surrounding the plurality of susceptors inside the enclosing member, and a plurality of sets of the introduction path and the discharge path facing each other are arranged in different directions on the enclosing member. It is formed.

In order to achieve the above object, a method of manufacturing a semiconductor device is provided in which a film is grown on a silicon carbide semiconductor substrate.
In this method of manufacturing a semiconductor device, the semiconductor substrate has a thickness of 400 μm, which is installed in an enclosure member, is held by a support rod, and a plurality of layers are stacked, and the periphery is covered with a heat insulating material via a heat insulating material protection plate. A step of introducing a gas from an introduction path formed in the enclosure member to the semiconductor substrate mounted on a susceptor having a thickness of 3 times or less of the thickness; and the enclosure member is formed to face the introduction path. radiation from the discharge passage and the step of discharging the gas, and heating respectively the top and bottom of the susceptor, said the susceptor from the top and the bottom of the susceptor other than the top and the bottom was wherein possess the steps of induction heating to each other, and is a set of the introduction path which faces the discharge path, the enclosure member, with a plurality of sets formed in different directions, a plurality of sets of the introduction path by From the discharge path to the front Introducing and discharging the gas at different timings.

  In the semiconductor device manufacturing apparatus and the semiconductor device manufacturing method described above, a film can be grown on a large number of semiconductor substrates with good uniformity in film quality, film thickness, impurity concentration, and the like, while saving space.

  Hereinafter, as an embodiment of the present invention, an outline of the embodiment will be described, and then an embodiment based on the outline will be described with reference to the drawings. However, the technical scope of the present invention is not limited to these embodiments.

First, an outline of the embodiment will be described with reference to the drawings.
1A and 1B illustrate an outline of an embodiment, FIG. 1A is a schematic cross-sectional view, and FIG. 1B is a schematic side sectional view. Note that FIG. 1B is a schematic cross-sectional view taken along a broken line XX ′ in FIG.

  In the semiconductor device manufacturing apparatus 10, as shown in FIG. 1, a susceptor 12 on which a semiconductor substrate 10 a is mounted is installed inside an enclosure member 11. Hereinafter, details of each configuration will be described with reference to FIG.

First, the enclosure member 11 is closed on all sides and upper and lower surfaces, and has a space inside. Further, the enclosing member 11 is formed with an introduction path 13, a discharge path 14 and a heating unit 15.
The introduction path 13 communicates with the inside of the enclosing member 11 and serves as an inlet for gas introduced into the inside of the enclosing member 11. In addition, the straight arrow 13a in a figure has shown the flow of gas, According to this, the gas introduce | transduced from the introduction path 13 spreads inside the enclosure member 11, and advances the clearance gap between susceptors 12. FIG.

  The discharge path 14 communicates with the inside of the enclosure member 11 and serves as a discharge port for the gas introduced from the introduction path 13. In addition, according to the arrow 13a which shows the flow of gas, the gas which advanced through the clearance gap between susceptors 12 converges in the discharge path 14, and is discharged | emitted outside the enclosure member 11. FIG.

The heating unit 15 can generate, for example, a magnetic field using a high-frequency current, and can inductively heat the object using the magnetic field.
On the other hand, a plurality of the susceptors 12 are stacked at intervals and are held by the support rod 12a. A semiconductor substrate 10 a is mounted on each susceptor 12. The susceptor 12 has a heat capacity that is sufficiently heated by the heating unit 15. The thickness is about three times or less the thickness of the semiconductor substrate, and the diameter is about three times or less the diameter of the semiconductor substrate. It is. Further, the material of the susceptor 12 and the semiconductor substrate 10a mounted on the susceptor 12 is preferably the same, and similarly, the thickness is preferably the same.

  The plurality of susceptors 12 stacked in this way are installed inside the enclosure member 11. Then, the uppermost part and the lowermost part of the susceptor 12 are induction-heated by the magnetic field from the heating part 15. And the susceptors 12 other than the uppermost part and the lowermost part can be mutually heated by radiation.

  In such a semiconductor device manufacturing apparatus 10, a film is grown on the semiconductor substrate 10 a by introducing gas from the introduction path 13 and exhausting from the discharge path 14 while heating the susceptor 12 by the heating unit 15. be able to.

  Accordingly, since the susceptor 12 having a size that can be sufficiently heated by the heating unit 15 is held in the vertical direction by the support rod 12a, a plurality of semiconductor substrates 10a can be heated at the same time. Processing costs can be reduced, and films can be grown simultaneously on a large number of semiconductor substrates 10a in a space-saving manner.

Next, a first embodiment will be described.
The first embodiment has a more specific configuration based on the above outline.
FIG. 2 is a schematic cross-sectional view of the semiconductor device manufacturing apparatus according to the first embodiment. FIG. 2 schematically shows the semiconductor device manufacturing apparatus 20 as viewed from above. In addition, a quartz plate or the like is formed on the upper part of the actual semiconductor device manufacturing apparatus 20, but in FIG. 2, the description thereof is omitted and only the inside is described.

  In the semiconductor device manufacturing apparatus 20, as shown in FIG. 2, a susceptor 22 on which a wafer 20 a is mounted is installed in an enclosure member 21. Details of each configuration will be described below with reference to FIG.

  The enclosing member 21 has a configuration in which a side portion is covered with a cylindrical quartz tube 21a, and upper and lower surfaces are closed by a quartz plate (not shown in FIG. 2), and has a space inside. Further, the enclosing member 21 has an introduction path 23 and a discharge path 24 formed on the side of the quartz tube 21a.

  The introduction path 23 communicates with the inside of the enclosing member 21 and serves as an introduction passage for introducing gas into the enclosing member 21. The introduction path 23 is made of, for example, stainless steel (SUS).

  The discharge path 24 is formed on the side of the quartz tube 21 a at a position facing the introduction path 23, communicates with the inside of the enclosure member 21, and is an exhaust path for exhausting gas from the inside of the enclosure member 21 to the outside. It becomes. Moreover, the discharge path 24 is comprised, for example by SUS.

  Further, such a pair of the introduction path 23 and the discharge path 24 is formed as a pair, and three sets of the introduction path 23 and the discharge path 24 are formed on the side portion of the quartz tube 21a in different directions. In the first embodiment, three sets of introduction paths 23 and discharge paths 24 are formed, but four or more sets may be used as necessary.

  On the other hand, the susceptor 22 is stacked in the vertical direction (perpendicular to the paper surface) with an interval, and is held by the support rod 22b, thereby forming a susceptor stack (not shown in FIG. 2). Furthermore, it is desirable that the susceptor 22 has the same quality as the wafer 20a to be mounted, and similarly has the same thickness. In this way, when the susceptor 22 is heated, the temperature increase / decrease rates of the susceptor 22 and the wafer 20a can be made substantially equal. Therefore, in the first embodiment, for example, the susceptor 22 and the wafer 20a are made of SiC. If the thickness of the wafer 20a is about 500 μm, the thickness of the susceptor 22 is about 400 μm to 600 μm, which is substantially the same as that of the wafer 20a, and the diameter of the wafer 20a is about 7.6 cm (about 3 inches). The diameter of 22 is 10 cm to 12 cm, which is about 1.5 times the diameter of the wafer 20a.

Such a susceptor stack is covered with a heat insulating material 21 b and installed inside the enclosure member 21 to constitute a semiconductor device manufacturing apparatus 20.
Next, the semiconductor device manufacturing apparatus 20 will be described.

  FIG. 3 is a schematic side sectional view of the semiconductor device manufacturing apparatus according to the first embodiment. FIG. 3 schematically shows a cross-sectional view taken along the broken line A-A ′ in FIG. 2. FIG. 3 also shows a quartz plate 21c, a high-frequency heating coil 25a, and a radiation thermometer 25b that are not shown in FIG.

  In the semiconductor device manufacturing apparatus 20, as shown in FIG. 3, a susceptor 22 on which a wafer (not shown in FIG. 3) is mounted is installed in an enclosure member 21. Details of each configuration will be described below with reference to FIG.

  The enclosing member 21 has a configuration in which a side portion is covered with a cylindrical quartz tube 21a, the upper and lower surfaces thereof are closed by a quartz plate 21c, and there is a space inside. The quartz tube 21a and the quartz plate 21c are joined via a SUS member 21d having an O-ring 21e. FIG. 3 is a cross-sectional view taken along the broken line A-A ′ in FIG. 2, so that the introduction path and the discharge path are not shown.

Further, the quartz plate 21c is provided with a high frequency heating coil 25a and a radiation thermometer 25b.
The high frequency heating coil 25a can generate a magnetic field by a high frequency current. The high-frequency heating coil 25a can induction-heat the uppermost and lowermost susceptors 22 inside the enclosure member 21 by the generated magnetic field.

The radiation thermometer 25b can observe the temperature inside the heated susceptor 22 and the enclosure member 21 through the temperature observation port 25c.
On the other hand, 16 susceptors 22 are stacked in the vertical direction at intervals of about 4 mm, and are held by support rods 22b, thereby forming a susceptor stack 22a. The thickness and diameter of the susceptor 22 are as described above, and the height of the susceptor stack 22a is about 8 cm.

Such a susceptor stack 22a is covered with a heat insulating material 21b and installed inside the enclosure member 21 to constitute a semiconductor device manufacturing apparatus 20.
Further, since the susceptor stack 22a is not only installed inside the enclosure member 21, but also can be taken out freely, the wafer mounted on the susceptor 22 can be appropriately replaced.

FIG. 4 is a schematic cross-sectional view of the susceptor stack taken out of the semiconductor device manufacturing apparatus according to the first embodiment.
In the enclosure member 21 configured by joining the quartz tube 21a on the side and the quartz plate 21c on the upper and lower surfaces via a SUS member 21d having an O-ring 21e, the quartz plate 21c on the upper surface can be freely moved. Can be opened and closed. For this reason, the quartz plate 21c on the upper surface is opened, the susceptor stack 22a inside the enclosing member 21 is lifted using the wafer exchanging jig 22c, and the susceptor 22 is exchanged together with the wafer (not shown in FIG. 4). be able to. The replaced susceptor 22 can be cleaned by performing an etching process using, for example, a hydrogen chloride (HCl) gas by a separately prepared cleaning device. Therefore, it is possible to always use a clean susceptor 22 without deposits without stopping the semiconductor device manufacturing apparatus 20.

  For this reason, in Patent Document 1, for example, in a semiconductor device manufacturing apparatus having a large susceptor having a diameter of about 50 cm, it is necessary to perform maintenance of the apparatus once every 15 hours. On the other hand, in the semiconductor device manufacturing apparatus 20 including the susceptor 22, the maintenance of the semiconductor device manufacturing apparatus 20 may be performed once every 150 hours, and the maintenance cycle can be extended.

Subsequently, a heating process of the susceptor 22 in the semiconductor device manufacturing apparatus 20 will be described.
In the semiconductor device manufacturing apparatus 20, the high frequency heating coil 25 a installed on the quartz plate 21 c is used for heating the susceptor 22. That is, when the high frequency heating coil 25a installed on the quartz plates 21c on the upper and lower surfaces of the enclosing member 21 generates a magnetic field by high frequency current, the uppermost and lowermost susceptors 22 of the susceptor stack 22a installed inside the enclosing member 21 Induction heating. The induction-heated uppermost and lowermost susceptors 22 heat adjacent susceptors 22 by radiation. In this way, heat is successively transferred to the susceptor 22 at the center of the susceptor stack 22a, and all the susceptors 22 constituting the susceptor stack 22a are heated.

  FIG. 5 is a graph showing a temperature distribution depending on the height of the susceptor stack of the semiconductor device manufacturing apparatus according to the first embodiment. In FIG. 5, the ordinate [mm] set on the horizontal axis represents the distance from the reference with the center of the height of the susceptor stack 22a as the reference (0 [mm]), and the susceptor set on the vertical axis. The center temperature [° C.] represents the temperature near the center of the susceptor 22. For temperature observation, the temperature distribution of the susceptor 22 is calculated by electromagnetic field and thermofluid analysis based on the observation result of the radiation thermometer 25b via the temperature observation port 25c installed at the upper and lower portions of the susceptor stack 22a. It is a thing. Further, the temperature inside the enclosing member 21 is managed by adjusting the high-frequency current by observing the temperatures of the uppermost and lowermost susceptors 22 from the temperature observation port 25c using the radiation thermometer 25b. The height of the susceptor stack 22a, the number of susceptors 22 constituting the susceptor stack 22a, and the thickness and diameter of the susceptor 22 are as described above.

  According to FIG. 5, except for the uppermost and lowermost susceptors 22 (points 22e and 22f in the figure), the temperature of the susceptor 22 (point 22d in the figure) at the center of the susceptor stack 22a is within 10 ° C. It is shown that the temperature difference is. If the temperature difference is within 10 ° C., it is considered that the influence on the concentration distribution due to the position inside the gas enclosing member 21 and the film thickness distribution grown on the wafer 20a is small.

Further, the semiconductor device manufacturing apparatus 20 will be further described.
FIG. 6 is another schematic side sectional view of the semiconductor device manufacturing apparatus according to the first embodiment. FIG. 6 schematically shows a cross-sectional view taken along broken line BB ′ in FIG. 6 also shows a quartz plate 21c, a high-frequency heating coil 25a, and a radiation thermometer 25b that are not shown in FIG.

  As described above, in the semiconductor device manufacturing apparatus 20, as shown in FIG. 6, the susceptor 22 on which a wafer (not shown in FIG. 6) is mounted is installed in the enclosure member 21. Details of each configuration will be described below with reference to FIG.

  The enclosing member 21 has a configuration in which a side portion is covered by a cylindrical quartz tube 21a and the upper and lower surfaces thereof are closed by a quartz plate 21c, and has a space inside. The enclosing member 21 is formed with an introduction path 23 and a discharge path 24.

  As described above, the introduction path 23 communicates with the inside of the enclosing member 21, and serves as an introduction path when gas is introduced into the enclosing member 21. Moreover, the introduction path 23 is comprised, for example by SUS.

  As described above, the discharge path 24 is formed at a position facing the introduction path 23, communicates with the inside of the enclosing member 21, and serves as an exhaust path for exhausting gas from the inside of the enclosing member 21 to the outside. Moreover, the discharge path 24 is comprised, for example by SUS.

  The quartz plate 21c is provided with a high frequency heating coil 25a and a radiation thermometer 25b. The high-frequency heating coil 25a and the radiation thermometer 25b are as described above.

Inside such an enclosing member 21, a susceptor stack 22a in which a plurality of the above-described susceptors 22 are stacked is installed.
And the case where gas is introduce | transduced into the inside of the enclosure member 21 in which the susceptor stack 22a was installed, and is discharged | emitted outside is demonstrated. In addition, the arrow 23a in FIG. 6 represents the flow of gas.

  The gas introduced into the enclosure member 21 through the introduction path 23 spreads up and down in the enclosure member 21. The spread gas passes between the susceptors 22 of the susceptor stack 22a, converges in a discharge path 24 formed at a position facing the introduction path 23, and is discharged to the outside.

  In addition, as shown in FIG. 2, in the semiconductor device manufacturing apparatus 20, when a pair of the introduction path 23 and the discharge path 24 is taken as one set, three sets are formed with different directions. Gas can be introduced and discharged from three directions. For this reason, since the concentration distributions of the upper and lower portions of the gas spreading up and down inside the enclosing member 21 can be made substantially uniform, it becomes possible to grow a substantially uniform film thickness on the wafer. When gas is introduced and discharged from two or more directions, gas from different directions may collide and be disturbed near the center of the susceptor 22. Therefore, in the case of introducing and discharging gas in two or more directions, the concentration distribution depending on the location of the gas can be made substantially uniform by alternately introducing and discharging the gas from each direction at regular intervals. . Therefore, by forming the gas introduction and discharge timings and directions differently, the same effect as when the susceptor 22 is rotated without rotating the susceptor 22 can be obtained. As a result, since a rotating shaft or a rotating blade necessary for rotating the susceptor 22 is not required, the manufacturing cost of the semiconductor device manufacturing apparatus 20 can be reduced. Further, since the concentration distribution depending on the location of the gas can be made substantially uniform, film formation can be performed with good uniformity in film quality, film thickness, impurity concentration, and the like.

A case where a film is actually grown on a wafer in the semiconductor device manufacturing apparatus 20 configured as described above will be described.
First, a susceptor stack 22a composed of 16 susceptors 22 on which 14 wafers composed of SiC are mounted is installed inside the enclosing member 21.

Subsequently, epitaxial growth is performed on all wafers. In three sets of introduction paths 23 and discharge paths 24, for example, introduction of H, monosilane (SiH ₄ ), propane (C ₃ H ₈ ), nitrogen (N) or trimethylaluminum ((CH ₃ ) ₃ Al) gas and Drain approximately every 20 minutes. After about 1 hour, an epitaxial film of about 6 μm grew on the wafer. For this epitaxial film, the variation in the concentration and film thickness of the epitaxial film was about 3% in standard deviation / average value. The variation in density and film thickness between the 14 wafers was about 4% in terms of (maximum value−minimum value) / average value.

  It should be noted that the epitaxial film has a footprint similar to that of the semiconductor device manufacturing apparatus 20, for example, an epitaxial film having the same concentration and film thickness variation as that of the semiconductor device manufacturing apparatus 20 using the apparatus disclosed in Patent Document 1. The number of sheets that can be grown simultaneously is about six.

  In the semiconductor device manufacturing apparatus 20 according to the first embodiment as described above, the support rod 22b is provided inside the enclosure member 21 in which three sets of the introduction path 23 and the discharge path 24 and the high frequency heating coil 25a are formed. A plurality of susceptors 22 that are overlapped in the vertical direction and on which a wafer is mounted are installed. And while heating the susceptor 22 with the high frequency heating coil 25a, while introducing gas from the introduction path 23 and exhausting it from the discharge path 24, an epitaxial film can be grown on the wafer.

  Therefore, since the susceptor 22 having a size that can be sufficiently heated by the high-frequency heating coil 25a is held in the vertical direction by the support rod 22b, a plurality of wafers can be heated simultaneously. Further, since the gas introduction and discharge are performed in three directions by the three sets of the introduction path 23 and the discharge path 24, the concentration distribution of the upper and lower portions of the gas spread inside the enclosure member 21 can be made substantially uniform. A substantially uniform film thickness can be grown on top. As a result, it is possible to reduce manufacturing and processing costs for installing a rotating shaft or rotating blades for rotating the susceptor 22, and to grow epitaxial films on a large number of wafers simultaneously in a small space. Further, since the quartz plate 21c on the upper surface of the enclosing member 21 can be freely opened and closed, the susceptor 22 can be exchanged together with the wafer. As a result, it is possible to always use a clean susceptor 22 having no deposits, and to extend the maintenance cycle.

Next, a second embodiment will be described.
In the second embodiment, a case where a heat insulating material protection plate is further provided for the heat insulating material 21b of the semiconductor device manufacturing apparatus 20 of the first embodiment will be described as an example. In the second embodiment, the same components as those in the semiconductor device manufacturing apparatus 20 of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  FIG. 7 is a schematic cross-sectional view of a semiconductor device manufacturing apparatus according to the second embodiment. FIG. 7 schematically shows the semiconductor device manufacturing apparatus 30 as viewed from above. Further, a quartz plate or the like is formed on the upper part of the actual semiconductor device manufacturing apparatus 30, but in FIG. 7, the description thereof is omitted and only the inside is described.

In the semiconductor device manufacturing apparatus 30, as in FIG. 2, a susceptor 22 on which a wafer 20 a is mounted is installed in an enclosure member 21.
The enclosing member 21 has a configuration in which a side portion is covered by a quartz tube 21a, and upper and lower surfaces are closed by a quartz plate (not shown in FIG. 7), and has a space inside. The diameter of the quartz tube 21a of the enclosing member 21 is as described above. Further, the enclosing member 21 has an introduction path 23 and a discharge path 24 formed on the side of the quartz tube 21a.

The introduction path 23 communicates with the inside of the enclosing member 21 and serves as an introduction passage for introducing gas into the enclosing member 21.
The discharge path 24 is formed at a position facing the introduction path 23, communicates with the inside of the enclosure member 21, and serves as a discharge path when gas is discharged from the inside of the enclosure member 21 to the outside.

  When such a pair of introduction path 23 and discharge path 24 is taken as one set, three sets of introduction path 23 and discharge path 24 are formed on the side portion of the quartz tube 21a in different directions.

On the other hand, the susceptor 22 is stacked in the vertical direction (perpendicular to the paper surface) with an interval and is held by the support bar 22b, thereby forming a susceptor stack (not shown in FIG. 7).
Such a susceptor stack is covered with a heat insulating material 21b via a heat insulating material protection plate 22g and installed inside the enclosing member 21 to constitute a semiconductor device manufacturing apparatus 30.

  The heat insulating material protection plate 22g is installed between the susceptor stack and the heat insulating material 21b. Further, the heat insulating material protection plate 22g is made of SiC, graphite coated with SiC, or graphite coated with tantalum carbide (TaC), and introduced, for example, a heat insulating material 21b etched by a gas such as H. Serve to protect.

Next, the semiconductor device manufacturing apparatus 30 will be described.
FIG. 8 is a schematic side sectional view of the semiconductor device manufacturing apparatus according to the second embodiment. FIG. 8 schematically shows a cross-sectional view taken along broken line CC ′ in FIG. FIG. 8 also shows a quartz plate 21c, a high-frequency heating coil 25a, and a radiation thermometer 25b that are not shown in FIG.

In the semiconductor device manufacturing apparatus 30, as shown in FIG. 8, a susceptor 22 on which a wafer (not shown in FIG. 8) is mounted is installed inside the enclosure member 21.
The enclosing member 21 has a configuration in which a side portion is covered with a quartz tube 21a, and upper and lower surfaces are closed by a quartz plate 21c, and has a space inside. The quartz tube 21a and the quartz plate 21c are joined via a SUS member 21d having an O-ring 21e.

Furthermore, the quartz plate 21c is provided with the high frequency heating coil 25a and the radiation thermometer 25b as described above.
On the other hand, 16 susceptors 22 are stacked in the vertical direction at intervals of about 4 mm, and are held by support rods 22b, thereby forming a susceptor stack 22a.

Such a susceptor stack 22a is covered with a heat insulating material 21b via a heat insulating material protection plate 22g and installed inside the enclosure member 21 to constitute a semiconductor device manufacturing apparatus 30.
In the semiconductor device manufacturing apparatus, when the heat insulating material protective plate 22g was not provided, the particle density generated in the heat insulating material 21b etched by the gas was 1 / cm ² on an average of 10 lots. On the other hand, in the case of the semiconductor device manufacturing apparatus 30 having the heat insulating material protection plate 22g, the particle density generated in the heat insulating material 21b was similarly improved to 0.5 particles / cm ² on the average of 10 lots. Furthermore, the service life of the heat insulating material 21b was improved from 150 hours to 300 hours by the presence or absence of the heat insulating material protection plate 22g.

  Therefore, the semiconductor device manufacturing apparatus 30 newly including the heat insulating material protection plate 22g between the susceptor stack 22a and the heat insulating material 21b protects the heat insulating material 21b etched by the gas, together with the effect of the first embodiment. Therefore, the service life of the semiconductor device manufacturing apparatus 30 can be improved.

  The above merely illustrates the principle of the present invention. In addition, many modifications and changes can be made by those skilled in the art, and the present invention is not limited to the precise configuration and application shown and described above, and all corresponding modifications and equivalents may be And the equivalents thereof are considered to be within the scope of the invention.

The outline | summary in embodiment is demonstrated, (A) is a plane cross-sectional schematic diagram, (B) is a side cross-sectional schematic diagram. It is a plane cross-sectional schematic diagram of the manufacturing apparatus of the semiconductor device in 1st Embodiment. 1 is a schematic side sectional view of a semiconductor device manufacturing apparatus according to a first embodiment. It is the cross-sectional schematic diagram which took out the susceptor stack of the manufacturing apparatus of the semiconductor device in 1st Embodiment. It is a graph which shows the temperature distribution depending on the height of the susceptor stack of the manufacturing apparatus of the semiconductor device in 1st Embodiment. It is another side cross-sectional schematic diagram of the manufacturing apparatus of the semiconductor device in 1st Embodiment. It is a plane cross-sectional schematic diagram of the manufacturing apparatus of the semiconductor device in 2nd Embodiment. It is a side cross-sectional schematic diagram of the manufacturing apparatus of the semiconductor device in 2nd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor device manufacturing apparatus 10a Semiconductor substrate 11 Enclosing member 12 Susceptor 12a Support rod 13 Introducing path 13a Arrow 14 Discharging path 15 Heating part

Claims (6)

In a semiconductor device manufacturing apparatus for growing a film on a silicon carbide semiconductor substrate,
An enclosure member;
A susceptor on which the semiconductor substrate is mounted, which is installed in the enclosure member and is held by a support rod and stacked in plural.
An introduction path formed in the enclosure member for introducing gas into the enclosure member;
A discharge path for discharging the gas, which is formed on the enclosure member so as to face the introduction path;
A heating unit for heating the susceptor formed on the enclosure member;
A heat insulating material that surrounds the plurality of susceptors inside the enclosure member;
An apparatus for manufacturing a semiconductor device, wherein a plurality of sets of the introduction path and the discharge path that face each other are formed in different directions in the enclosure member. 2. The semiconductor device manufacturing apparatus according to claim 1, further comprising a protective member for the heat insulating material between the susceptor and the heat insulating material.
  3. The semiconductor device manufacturing apparatus according to claim 2, wherein the protective member is graphite coated with silicon carbide, silicon carbide, or tantalum carbide.   The semiconductor device manufacturing apparatus according to claim 1, wherein the susceptor is made of silicon carbide.   The semiconductor device manufacturing apparatus according to claim 1, wherein the susceptor has the same thickness as the semiconductor substrate. In a method for manufacturing a semiconductor device in which a film is grown on a silicon carbide semiconductor substrate,
A thickness of 400 μm to 3 times less than the thickness of the semiconductor substrate, which is installed in the enclosure member, is held by a support rod, and a plurality of layers are stacked, and the periphery is covered with a heat insulating material via a heat insulating material protection plate Introducing gas into the semiconductor substrate mounted on a susceptor from an introduction path formed in the surrounding member;
A step of discharging the gas from a discharge passage formed in the enclosure member so as to face the introduction passage;
By heating the top and bottom of the susceptor, respectively, and a step of induction heating to each other by radiation the top and wherein the susceptor other than the bottom from the top and the bottom of the susceptor ,
A plurality of sets of the introduction path and the discharge path facing each other are formed in the enclosure member in different directions, and the gas is introduced and discharged from the plurality of sets of the introduction path and the discharge path at different timings. A method of manufacturing a semiconductor device.

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