JP4909503B2 - Method for manufacturing refractory metal silicide film, method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a refractory metal silicide film and a method for manufacturing a semiconductor device.

  In the current semiconductor devices, products of technology nodes of 130 nm to 90 nm are in the mass production stage. Semiconductor devices have been manufactured according to a scaling rule that their performance improves with miniaturization. However, with further miniaturization, the parasitic resistance increases, and the performance cannot be improved without following the scaling law. Therefore, a salicide process in which the gate electrode, the source electrode, and the drain electrode are simultaneously silicided to reduce the resistance of these electrodes has become an essential technique.

As the salicide technology, TiSi ₂ , CoSi ₂ , NiSi, or the like is used. Among these, CoSi ₂ is generally used in products of technology nodes of 130 nm to 90 nm.

As a conventional salicide technique of CoSi ₂ , Patent Document 1 is disclosed and will be described with reference to FIGS. Cobalt coagulates and increases in resistance when oxygen is mixed in during the silicidation reaction by heat treatment. Therefore, a method of preventing oxygen from being mixed in advance with a titanium nitride film as in Patent Document 1 is now a common technique.

  First, as shown in FIG. 3A, a LOCOS silicon oxide film 52 is formed at a predetermined position on the silicon substrate 51 by using a well-known element isolation formation technique. Next, a 5 nm gate oxide film 53 is formed by thermal oxidation, and a 150 nm polycrystalline silicon film 54 is formed thereon by LPCVD.

Next, as shown in FIG. 3B, after implanting arsenic ions into the polycrystalline silicon film 54, the polycrystalline silicon film is patterned using a known lithography technique and etching technique to form the gate electrode 55. Form. Next, using the gate electrode 55 as a mask, for example, arsenic ions 70 are ion-implanted to form a shallow impurity diffusion layer 56. The dose amount of the ion implantation is, for example, 3 × 10 ¹⁴ atm / cm ² and the implantation energy is 10 keV.

Next, as shown in FIG. 3C, after a 100 nm silicon oxide film is formed by LPCVD, the silicon oxide film is anisotropically etched until the surface of the gate electrode 55 is exposed, whereby the gate electrode 55 is formed. A gate electrode sidewall insulating film 57 is formed on the sidewall. Next, arsenic ions 71 are implanted by a known ion implantation technique to form a deep impurity diffusion layer 58. The ion implantation is performed, for example, under the conditions of a dose amount of 2 × 10 ¹⁵ atm / cm ² and an energy of 40 keV.

  Next, as shown in FIG. 3D, RTA (Rapid Thermal Annealing) processing is performed at 1000 ° C. for 10 seconds, thereby diffusing arsenic in the gate electrode 55 into the inside, and forming a shallow diffusion layer 56 and a deep layer. The source electrode 59 and the drain electrode 60 are formed by activating arsenic in the diffusion layer 58.

Next, as shown in FIG. 3E, germanium ions 80 are implanted to make the surfaces of the source electrode 59, the drain electrode 60, and the gate electrode 55 non-crystallized, thereby forming an amorphous layer 61. The ion implantation conditions at this time are that the implantation amount is 8 × 10 ¹³ atm / cm ² or more, the implantation energy is shallower than the depth of the deep diffusion layer of the source / drain electrode, and the amorphous layer 61 is formed. The depth is set so deep that the amorphous layer 61 does not disappear due to the reaction with the cobalt film during the first heat treatment of the reaction, and the amorphous layer 61 disappears during the second heat treatment of the silicidation reaction. Specifically, depending on the thickness of the silicide film to be formed, when the deep diffusion layer depth of the source / drain electrode is 100 nm, the implantation energy of germanium is in the range of about 20 to 40 keV. Next, the silicon oxide film (natural oxide film) on the gate electrode 55, the source electrode 59, and the drain electrode 60 is removed with about 2% buffered hydrofluoric acid.

  Next, as shown in FIG. 4F, a cobalt film 62 of 8 to 20 nm and a titanium nitride film 63 of about 30 nm are formed by physical sputtering. The film thickness of the cobalt film 62 at this time is increased as the energy of the germanium ion implantation 80 is increased. The titanium nitride film 63 is formed in order to prevent oxygen from being mixed into the silicide film during the silicidation reaction to cause unevenness or increase in resistance.

Next, a first heat treatment for silicidation reaction is performed. As shown in FIG. 4G, RTA treatment is performed for 30 seconds at a temperature of 400 to 450 ° C. in a nitrogen or argon atmosphere. By this heat treatment, a cobalt silicide film 64 made of Co ₂ Si or CoSi is formed on the surfaces of the gate electrode 55, the source electrode 59 and the drain electrode 60.

Next, as shown in FIG. 4 (h), the titanium nitride film 63 is removed by immersing in a mixed solution of hydrogen peroxide and ammonia, and subsequently immersed in a mixed solution of sulfuric acid and hydrogen peroxide. The cobalt film 62 is removed. At this time, the cobalt silicide film 64 remains without being removed by these solutions. Next, as a second heat treatment for the silicidation reaction, an RTA treatment at 600 ° C. to 900 ° C. is performed in a nitrogen or argon atmosphere. By this heat treatment, the cobalt silicide film 64 is changed from Co ₂ Si or CoSi to CoSi ₂ to reduce the resistance.

  Next, as shown in FIG. 4I, a semiconductor device is completed by forming an interlayer insulating film 65 and a metal wiring 66 using a known technique.

As described above, mixing of oxygen during silicidation of cobalt is prevented by the titanium nitride film 63, and a low resistance cobalt silicide film is obtained.
JP-A-9-251967

  However, when the cobalt silicide film is formed by using the above method, there is a case where the cobalt silicide film is not properly formed at a certain ratio. Therefore, when manufacturing a semiconductor device using this method, it is difficult to improve the manufacturing yield.

  This invention is made | formed in view of the situation which concerns, and provides the manufacturing method of the refractory metal silicide film which can form a refractory metal silicide film appropriately.

According to a first aspect of the present invention, there is provided a method of manufacturing a refractory metal silicide film, the step of forming a refractory metal film on a semiconductor substrate containing silicon,
A step of amorphizing only the surface of the formed refractory metal film,
Forming a titanium nitride film on the amorphous refractory metal film surface ;
A step of forming a refractory metal silicide film by reacting the refractory metal with silicon of the substrate by heat-treating the obtained substrate is provided.

According to a second aspect of the present invention, there is provided a method for producing a refractory metal silicide film, the step of forming a refractory metal film on a semiconductor substrate containing silicon,
Forming a single layer of an amorphous titanium nitride film on the surface of the formed refractory metal film;
A step of forming a refractory metal silicide film by reacting the refractory metal with silicon of the substrate by heat-treating the obtained substrate is provided.

Hereinafter, the background of the present invention will be described.
The inventor of the present invention has found that when a cobalt silicide film is formed by the above-described prior art, there are portions where a silicide film is not formed, that is, so-called cracks, in several places of an 8-inch silicon wafer. This became clear in the following experiment.

  First, a cobalt silicide film was formed on the entire surface of a silicon wafer having no pattern according to a conventional example. Thereafter, the wafer surface was inspected using a defect inspection machine (manufactured by Tencor). As a result, some silicide films were not formed in the 8-inch wafer. In order to clarify this phenomenon, the inventors of the present invention measured the wafer immediately after sputtering the cobalt film 62 and the titanium nitride film 63 with a defect inspection machine. Then, there was a portion where the titanium nitride film 63 was missing. When the same measurement was performed after the position was grasped and the silicidation reaction was performed to form the cobalt silicide film 64, the cobalt silicide film 64 at the same position was missing.

  This phenomenon will be described with reference to FIG. This figure is an enlarged view when the cobalt silicide film 64 is formed on the drain electrode 60 in the conventional example. FIG. 5 (a) corresponds to FIG. 4 (f), and FIG. Corresponds to (h). The cobalt film 62 and the titanium nitride film 63 formed by physical sputtering are polycrystalline. Therefore, the titanium nitride film 63 sputtered on the cobalt film 62 grows with a certain crystal nucleus density on the surface of the cobalt film 62. Further, the titanium nitride film 63 grows under the influence of the crystal orientation of the underlying cobalt film 62. Here, as shown in FIG. 5A, a portion 90 lacking in the titanium nitride film 63 is generated. This portion cannot block oxygen, and the silicidation reaction is hindered by the mixing of oxygen, so that the silicide film 64 is lacking in the region 91 as shown in FIG.

  If the region 91 in which the cobalt silicide film 64 is not formed hits, for example, the gate electrode, the silicide film of the gate electrode is disconnected, the resistance becomes high, the electric signal does not propagate at high speed, and the device speed of the semiconductor device is deteriorated.

  The inventors of the present invention have found such a phenomenon, and based on this finding, have found that the above problem can be solved if at least one of the cobalt film 62 and the titanium nitride film 63 is made amorphous. Furthermore, this idea has been found to be valid not only for cobalt films but also for refractory metal films in general, and the present invention has been completed.

  According to the first invention, the surface of the refractory metal film is amorphized. For this reason, the crystal nucleus density of the titanium nitride film is increased. Further, the titanium nitride film can be formed without being affected by the crystal orientation of the underlying refractory metal film. Accordingly, since it is possible to suppress the lack of the titanium nitride film, it is possible to reliably block oxygen and to suppress the lack of the refractory metal silicide film and to form the film with high uniformity.

  According to the second invention, since the amorphous titanium nitride film is formed on the surface of the refractory metal film, the amorphous titanium nitride film is influenced by the crystal orientation of the underlying refractory metal film. Can be formed without receiving. Therefore, since it is possible to form a uniform film while suppressing the absence of the titanium nitride film, it is possible to reliably block oxygen and to suppress the absence of the refractory metal silicide film and to form the film with high uniformity.

  In addition, when these methods are used, a semiconductor device can be manufactured with a high yield.

1. First Embodiment A method for producing a refractory metal silicide film according to a first embodiment of the present invention includes a step of forming a refractory metal film on a semiconductor substrate containing silicon, and a step of forming the formed refractory metal film. The step of amorphizing the surface, the step of forming a titanium nitride film on the amorphized refractory metal film, and the resulting substrate are heat-treated to react the refractory metal with the silicon of the substrate. And forming a refractory metal silicide film.

1-1. Step of forming a refractory metal film on a semiconductor substrate containing silicon “Semiconductor containing silicon” includes not only pure silicon but also a silicon alloy (for example, SiGe or SiC) that forms silicide with a refractory metal. included. The “refractory metal” includes a metal that reacts with silicon to form silicide. The refractory metal is made of, for example, cobalt or nickel. The refractory metal film can be formed, for example, by sputtering, and in this case, the refractory metal is usually polycrystalline.

  The refractory metal film is preferably formed after at least part of the surface of the semiconductor substrate is made amorphous. In this case, spikes of refractory metal silicide can be prevented from being formed. Amorphization of the semiconductor substrate surface can be performed, for example, by ion implantation of germanium ions, silicon ions, argon ions, or arsenic ions into the semiconductor substrate surface.

1-2. Step of amorphizing the surface of the formed refractory metal film The surface of the refractory metal film formed in the above step is amorphized. Amorphization can be performed, for example, by irradiation with argon ions. Since argon is generally provided in a sputtering apparatus used in mass production facilities, this processing can be performed using conventional facilities. Therefore, no new capital investment is required and production costs can be suppressed. Also,
Ion irradiation for making the cobalt film surface amorphous is not limited to argon, and may be nitrogen, xenon, arsenic, silicon, germanium, or the like.

1-3. Step of forming a titanium nitride film on the refractory metal film made amorphous A titanium nitride film is formed on the refractory metal film made amorphous in the above step. The titanium nitride film can be formed by sputtering or CVD. This titanium nitride film may be polycrystalline or amorphous. In either case, the titanium nitride film can be formed uniformly without a defect region, and oxygen in the atmosphere can be prevented from entering the refractory metal film.

  Further, the titanium nitride film is preferably formed on the refractory metal film via the titanium film. Since the titanium film has an effect of reducing oxygen, even if oxygen passes through the titanium nitride film, it can be suppressed that oxygen is mixed into the refractory metal silicide film.

1-4. A process of forming a refractory metal silicide film by reacting a refractory metal with silicon of the substrate by heat-treating the obtained substrate. By heat-treating the obtained substrate, the refractory metal film and silicon of the substrate are A refractory metal silicide film is formed by reaction. Preferably, the substrate heat treatment is a step of reacting the refractory metal with silicon of the substrate to form a refractory metal silicide film by the first heat treatment, and removing the unreacted refractory metal film and the titanium nitride film. This is performed by a step and a step of reducing the resistance of the refractory metal silicide film by the second heat treatment. By performing the heat treatment in two stages as described above, a refractory metal silicide film having a low resistance can be surely formed. The first heat treatment is preferably performed at 400 to 450 ° C., and the second heat treatment is preferably performed at 600 to 900 ° C.

2. Second Embodiment A method of manufacturing a refractory metal silicide film according to a second embodiment of the present invention includes a step of forming a refractory metal film on a semiconductor substrate containing silicon, and the formed refractory metal film. A step of forming an amorphous titanium nitride film and a step of forming a refractory metal silicide film by reacting the refractory metal with silicon of the substrate by heat-treating the obtained substrate.

  The description of the first embodiment also applies to the present embodiment, and vice versa, unless it is contrary to its spirit.

2-1. Step of forming a refractory metal film on a semiconductor substrate containing silicon This step is the same as in the first embodiment, and a description thereof is omitted.

2-2. A process of forming an amorphous titanium nitride film on the formed refractory metal film The amorphous titanium nitride film is formed after the surface of the refractory metal film is amorphized and then amorphized. You may form on a metal film. The amorphous titanium nitride film is preferably formed by a CVD method. The amorphous titanium nitride film can be formed without being affected by the crystal orientation of the underlying refractory metal film. Therefore, a uniform titanium nitride film can be formed regardless of whether the underlying refractory metal film is polycrystalline or amorphous, and oxygen can be reliably blocked, and the lack of a refractory metal silicide film. And can be formed with high uniformity.

2-3. A process of forming a refractory metal silicide film by reacting the refractory metal with silicon of the substrate by heat-treating the obtained substrate. This process is the same as in the first embodiment, and a description thereof is omitted.

  Hereinafter, a method for forming a refractory metal silicide film according to the present invention will be described in detail with reference to the illustrated embodiments.

Although a description will be given using a cobalt film as the refractory metal, the present invention is not limited to this, and the present invention can be applied to nickel and other refractory metals.
Although an N channel MOS transistor will be described, a P channel MOS transistor can be easily formed by reversing the impurity type.

  A procedure for forming the refractory metal silicide film of Example 1 will be described with reference to FIGS.

  First, as shown in FIG. 1A, a silicon oxide film 2 is formed as an element isolation region in a predetermined region in the silicon substrate 1 by an STI (Shallow Trench Isolation) technique. Next, steps similar to those shown in FIGS. 3A to 3E are performed to obtain the structure shown in FIG. In the structure shown in FIG. 1A, a gate oxide film 3 having a thickness of 2 to 7 nm and a polycrystalline silicon film having a thickness of 150 to 250 nm are formed on a substrate 1. Sidewall insulating film 5 is formed. Further, a source electrode 6 and a drain electrode 7 composed of a shallow diffusion layer and a deep diffusion layer are formed adjacent to the gate electrode 4. An amorphous layer 8 is formed on the surfaces of the gate electrode 4, the source electrode 6 and the drain electrode 7 by germanium ion implantation. The thickness of the amorphous layer 8 is so thick that the amorphous layer 8 does not disappear due to the reaction with the cobalt film during the first heat treatment of the silicidation reaction in the subsequent step, and further the second heat treatment of the silicidation reaction. The thickness is sometimes set such that the amorphous layer 8 disappears. At this time, not only germanium ions but also silicon ions, argon ions, arsenic ions, or the like may be used. When these ions are used, the implantation energy is set so that the same thickness as the amorphous layer 8 formed of germanium is obtained. Here, since the formation of the amorphous layer 8 by germanium ions or the like is not an essential requirement that brings about the effect of the present invention, the present invention can be carried out without this step. Next, the silicon oxide film (natural oxide film) on the surfaces of the gate electrode 4, the source electrode 6 and the drain electrode 7 is removed with about 1% buffered hydrofluoric acid.

  Next, as shown in FIG. 1B, after a cobalt film 9 of 8 to 30 nm is formed on the entire surface of the wafer by physical sputtering, a DC bias of 200 to 500 V is applied to the stage on which the wafer is placed in a sputtering apparatus. As a result, the surface of the cobalt film 9 is irradiated with argon ions 20 for about 5 to 60 seconds to form an amorphous cobalt film 10 of about 1 to 2 nm on the surface of the cobalt film 9. Ion irradiation for making the cobalt film surface amorphous is not limited to argon, and may be nitrogen, xenon, arsenic, silicon, germanium, or the like. In that case, it is necessary to adjust the implantation energy so that the film thickness of the amorphous layer is about 1 nm to 2 nm.

  Next, as shown in FIG. 1C, a titanium nitride film 11 is formed to a thickness of 10 to 30 nm by physical sputtering. At this time, it is preferable that the formation of the cobalt film 9, the irradiation of the argon ions 20, and the formation of the titanium nitride film 11 are performed in the same apparatus without being exposed to the atmosphere. If the silicidation reaction is performed in a state where water or oxygen in the atmosphere is adsorbed on the surface of the cobalt film 9 or the surface of the amorphized cobalt film 10, oxygen is mixed into the cobalt silicide and the resistance is increased. is there. Thus, the titanium nitride film 11 is formed to block oxygen. Note that a stacked film of a titanium film and a titanium nitride film may be formed instead of the titanium nitride film. In that case, since the titanium film has an effect of reducing oxygen, even if oxygen passes through the titanium nitride film, it is more preferable because oxygen is prevented from being mixed into the cobalt silicide film.

Next, as shown in FIG. 1D, a cobalt silicide film 12 is formed in the same process as in the conventional example. This process will be described in detail. First, as a first heat treatment for silicidation reaction, an RTA treatment is performed at a temperature of 400 to 450 ° C. for 30 seconds in a nitrogen or argon atmosphere. By this heat treatment, a cobalt silicide film made of Co ₂ Si or CoSi is formed on the surfaces of the gate electrode 4, the source electrode 6 and the drain electrode 7. Next, the titanium nitride film 11 is removed by immersing in a mixed solution of hydrogen oxide water and ammonia water, and subsequently, the amorphous cobalt film 10 and the cobalt film are immersed in a mixed solution of sulfuric acid and hydrogen peroxide solution. 9 is removed. At this time, the cobalt silicide film 12 remains as it is without being removed by these solutions. Next, as a second heat treatment for the silicidation reaction, an RTA treatment at 600 ° C. to 900 ° C. is performed in a nitrogen or argon atmosphere. By this heat treatment, the cobalt silicide film 12 is changed from Co ₂ Si or CoSi to CoSi ₂ and has a low resistance.

  Next, as shown in FIG. 1E, a semiconductor device is completed by forming an interlayer insulating film 13 and a metal wiring 14 using a known technique.

  According to the method for forming a refractory metal silicide film of this embodiment, an amorphous cobalt film 10 is formed on the surface of the cobalt film 9. For this reason, the crystal nucleus density of the titanium nitride film 11 is increased. Further, it is not affected by the crystal orientation of the underlying cobalt film 9. Therefore, since the titanium nitride film 11 is not absent, oxygen can be reliably blocked, and the absence of the cobalt silicide film 12 can be suppressed and formed with high uniformity.

  Further, the surface of the cobalt film 9 is made amorphous using argon. Since argon is generally provided in a sputtering apparatus used in mass production facilities, this processing can be performed using conventional facilities. Therefore, no new capital investment is required and production costs can be suppressed.

  The procedure for forming the refractory metal silicide film of Example 2 will be described with reference to FIGS.

    First, the structure shown in FIG. 2A (the same structure as FIG. 1A) is obtained using the same method as in the first embodiment.

Next, as shown in FIG. 2B, after a cobalt film 9 of 8 nm to 30 nm is formed on the entire surface of the wafer by physical sputtering, an amorphous titanium nitride film 11a is formed to 10 nm to 30 nm by CVD. . The titanium nitride film 11a is formed at a temperature of 250 ° C. to 500 ° C. using titanium tetrachloride (TiCl ₄ ) gas and ammonia (NH ₃ ) gas.

  At this time, the formation of the cobalt film 9 and the titanium nitride film 11a are preferably performed in the same apparatus without being exposed to the atmosphere. If the process cannot be performed in the same apparatus, a titanium film or a laminated film of titanium and titanium nitride films is formed on the cobalt film in the same sputtering apparatus, and after being treated to block from oxygen, nitriding is performed with a CVD apparatus. A titanium film is formed. The reason why the laminated film of the titanium film and the titanium nitride film is used is that, as described in Example 1, there is an effect of blocking oxygen by the titanium film having reducibility.

  At this time, similarly to the first embodiment, the surface of the cobalt film 9 may be made amorphous by irradiation with argon ions or the like. In that case, since the formation density of the crystal nuclei of the titanium nitride film 11a is increased, the uniform titanium nitride film 11a can be formed over the entire area of the wafer with good controllability.

Next, as shown in FIG. 2C, a cobalt silicide film 12 is formed by the same process as in the conventional example or the first embodiment. This process will be described in detail. First, as a first heat treatment for silicidation reaction, an RTA treatment is performed at a temperature of 400 to 450 ° C. for 30 seconds in a nitrogen or argon atmosphere. By this heat treatment, a cobalt silicide film made of Co ₂ Si or CoSi is formed on the surfaces of the gate electrode 4, the source electrode 6 and the drain electrode 7. Next, the titanium nitride film 11a is removed by dipping in a mixed solution of hydrogen oxide water and ammonia water, and then the cobalt film 9 is removed by dipping in a mixed solution of sulfuric acid and hydrogen peroxide solution. At this time, the cobalt silicide film remains as it is without being removed by these solutions. Next, as a second heat treatment for the silicidation reaction, an RTA treatment at 600 ° C. to 900 ° C. is performed in a nitrogen or argon atmosphere. By this heat treatment, the cobalt silicide film is changed from Co ₂ Si or CoSi to CoSi ₂ to reduce the resistance.

  Next, as shown in FIG. 2D, a semiconductor device is completed by forming an interlayer insulating film 13 and a metal wiring 14 using a known technique.

  According to the method of forming the refractory metal silicide film of this embodiment, since the amorphous titanium nitride film 11a is formed on the surface of the cobalt film 9, this amorphous titanium nitride film 11a is formed as the underlying cobalt film 9a. It can be formed without being influenced by the crystal orientation. Therefore, since the uniform film can be formed without the lack of the titanium nitride film 11a over the entire region, oxygen can be surely blocked, and the absence of the cobalt silicide film 12 can be suppressed and the film can be formed with high uniformity. .

It is sectional drawing which shows the manufacturing process of the refractory metal silicide film | membrane which concerns on Example 1 of this invention. It is sectional drawing which shows the manufacturing process of the refractory metal silicide film | membrane which concerns on Example 2 of this invention. It is sectional drawing which shows the manufacturing process of the conventional refractory metal silicide film | membrane. It is sectional drawing which shows the manufacturing process of the conventional refractory metal silicide film | membrane. It is a figure explaining the subject of the manufacturing method of the conventional refractory metal silicide film.

Explanation of symbols

1: Substrate 2: Element isolation region 3: Gate insulating film 4: Gate electrode 5: Side wall insulating film 6: Source electrode 7: Drain electrode 8: Amorphous layer 9: Cobalt film 10: Amorphous cobalt film 11: Titanium nitride film 11a: amorphous titanium nitride film 12: cobalt silicide film 13: interlayer insulating film 14: metal wiring 20: argon ion implantation

Claims (10)

Forming a refractory metal film on a semiconductor substrate containing silicon;
A step of amorphizing only the surface of the formed refractory metal film,
Forming a titanium nitride film on the amorphous refractory metal film surface ;
A method for producing a refractory metal silicide film comprising a step of forming a refractory metal silicide film by reacting a refractory metal with silicon of the substrate by heat-treating the obtained substrate.   The manufacturing method according to claim 1, wherein the surface of the refractory metal film is amorphized by irradiation with argon ions. Forming a refractory metal film on a semiconductor substrate containing silicon;
Forming a single layer of an amorphous titanium nitride film on the surface of the formed refractory metal film;
A method for producing a refractory metal silicide film comprising a step of forming a refractory metal silicide film by reacting a refractory metal with silicon of the substrate by heat-treating the obtained substrate.   The manufacturing method according to claim 3, wherein the amorphous titanium nitride film is formed by a CVD method.   4. The manufacturing method according to claim 3, wherein the amorphous titanium nitride film is formed on the amorphized refractory metal film after the surface of the refractory metal film is amorphized.   The manufacturing method according to claim 1, wherein the refractory metal is made of cobalt or nickel.   4. The manufacturing method according to claim 1, wherein the refractory metal film is formed after at least part of the surface of the semiconductor substrate is amorphized.   The manufacturing method according to claim 1, wherein the titanium nitride film is formed on the refractory metal film via the titanium film. The heat treatment of the substrate
Forming a refractory metal silicide film by reacting a refractory metal with silicon of the substrate by a first heat treatment;
Removing unreacted refractory metal film and titanium nitride film;
The manufacturing method of Claim 1 or 3 performed by the process of reducing resistance of a refractory metal silicide film | membrane by 2nd heat processing.   A method for manufacturing a semiconductor device comprising the process according to claim 1.

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