JP4612707B2 - Electrostatic chuck, electrostatic chuck device, and manufacturing method of electrostatic chuck - Google Patents

Description

The present invention relates to an electrostatic chuck used for fixing a semiconductor wafer, correcting the flatness, or carrying it in an etching apparatus, ion implantation apparatus, electron beam exposure apparatus or the like used in the manufacture of a semiconductor, and a manufacturing method thereof, and The present invention relates to an electrostatic chuck device.

  In a semiconductor manufacturing process, in order to perform processing (processing) such as film formation and dry etching with high accuracy on a semiconductor wafer (for example, a silicon wafer), the processing apparatus maintains the flatness of the semiconductor wafer. It is necessary to fix (hold) it. A typical example of such a fixing means is an electrostatic chuck that chucks (fixes) a semiconductor wafer by electrostatic force (Patent Document 1).

  For example, in a bipolar electrostatic chuck, a pair of electrodes (electrostatic electrodes) are formed inside an insulator (usually a ceramic substrate), and static electricity generated by applying a voltage between the electrodes. A member to be adsorbed such as a semiconductor wafer (hereinafter also simply referred to as a wafer) is adsorbed and fixed to the surface (adsorption surface) of the insulator by force. And this electrostatic chuck usually forms an electrostatic chuck device by joining the back surface (the back surface of a ceramic substrate as an insulator) to the surface (upper surface) of a metal base member such as aluminum or aluminum alloy. The wafer is mounted in a processing apparatus (processing chamber) according to the processing purpose of the wafer and used for that purpose. In such an electrostatic chuck, a gas (for example, He gas) for controlling the temperature of the wafer, which is a member to be attracted, is supplied and filled between the attracting surface and the wafer. Some have a gas flow path (tunnel) provided with an open gas jet port provided inside an insulator. The gas flow path in such an electrostatic chuck is formed so that gas is circulated from a supply-side gas flow path formed in the base member and supplied toward the gas outlet (patent). Reference 2).

  By the way, in each process such as a dry etching process and a film forming process in semiconductor manufacturing, a technique using plasma is often used. In such plasma processes in semiconductor manufacturing, halogen-based corrosive gases are frequently used particularly for wafer etching and dry cleaning. Therefore, high corrosion resistance is required for the electrostatic chuck exposed to these corrosive gases (hereinafter also referred to as halogen gas) and plasma thereof. On the other hand, alumina ceramics are often used for insulators (ceramic substrates) constituting conventional electrostatic chucks. Alumina ceramics have corrosion resistance against such corrosive gases and plasmas, but it cannot be said that they have sufficient corrosion resistance. For this reason, when used in such a process, the insulator (the surface of the ceramic substrate) is corroded, and the surface roughness and flatness (flatness) of the adsorption surface are reduced in a relatively short time. It was pointed out that the life of the electrostatic chuck was short. Under such circumstances, an electrostatic chuck has been developed in which an yttria film having excellent halogen gas resistance and plasma resistance is formed on the surface of an insulator (substrate) made of alumina ceramic (Patent Document 3).

In addition, there is also one in which the entire insulator forming the electrostatic chuck is formed and sintered by a hot press method using an yttria sintered body (Patent Document 4).
JP-A-4-287344 JP 2004-6505 A JP 2005-245106 A JP 2006-225185 A

  However, in the case where an yttria film is formed on the surface of an alumina ceramic substrate as in the electrostatic chuck described in Patent Document 3, the film thickness is as thin as 10 to 100 μm because of thermal spraying. Sufficient durability against these plasmas cannot be obtained. In addition, when the yttria crystal grains forming the film are separated and dropped (granulated) when exposed to halogen gas or plasma, the average particle diameter of the yttria film by thermal spraying is as large as 10 to 50 μm. If there is any degranulation, the surface roughness and flatness of the chucking surface (yttria film surface) of the electrostatic chuck will be greatly reduced, and the life of the electrostatic chuck cannot be extended. As a result, there has been a problem that the electrostatic chuck that requires high surface roughness and flatness has an increased replacement frequency, resulting in an increase in cost.

  Further, in the case where the yttria sintered body is formed by the hot press method like the electrostatic chuck described in Patent Document 4, it is possible to freely form the gas flow path in the insulator based on the manufacturing method. Can not. Therefore, there is a problem that it cannot be embodied in an electrostatic chuck that requires temperature control by gas.

The present invention has been made in view of the various problems described above in the electrostatic chuck, its object is to provide a superior in corrosion resistance to Ha Rogengasu and their plasma.

An invention according to claim 1 for solving the above-mentioned problem is an electrostatic chuck comprising an electrostatic electrode inside an insulator, the electrostatic chuck comprising an electrostatic electrode inside the insulator. The insulator includes a yttria sintered body obtained by laminating and firing a plurality of ceramic green sheets containing yttria powder as a raw material powder and calcium carbonate as a sintering aid. The electrostatic electrode is composed of a metallized layer formed by printing a metallized paste on the surface of the ceramic green sheet and firing at the same time as the green sheet, and having a particle size of 0.8 μm to 2.6 μm . The metallized paste includes, as a raw material powder, one kind of metal powder selected from tungsten powder, molybdenum powder, and platinum powder, and yttria powder. It is a sign.

The invention according to claim 2 is the electrostatic chuck according to claim 1, wherein the raw material powder of the ceramic green sheet is yttria powder having an average particle diameter of 0.5 μm to 2.0 μm .

According to a third aspect of the present invention, the metallized paste includes, as a raw material powder, a tungsten powder having an average particle diameter of 0.8 μm to 7.0 μm, a molybdenum powder having an average particle diameter of 0.8 μm to 7.0 μm, and an average particle diameter of 1 and at least one metal powder selected from platinum powder .0Myuemu～9.0Myuemu, electrostatic according to claim 1 or 2; and a yttria powder having an average particle size 0.5μm~1.5μm It is a chuck.

The invention according to claim 4 is characterized in that the raw material powder of the metallized paste contains 40 vol% to 87 vol% of tungsten powder or molybdenum powder, and the remainder is yttria powder . An electrostatic chuck according to any one of the preceding claims.

Invention of claim 5, the raw material powder of the metallizing paste is either platinum powder containing 45vol% ~55vol%, and of claims 1 to 3 thereof and the balance being a yttria powder 1 The electrostatic chuck according to the item .

The invention described in claim 6 includes a metal base member and an electrostatic chuck joined to the metal base member, and the electrostatic chuck is described in any one of claims 1 to 5. This is an electrostatic chuck device .

The invention according to claim 7 is a method for producing the electrostatic chuck according to claim 1, wherein yttria powder having an average particle size of 0.5 μm to 2.0 μm is used as a raw material powder, and calcium carbonate is used as a sintering aid. And a ceramic green sheet having a metallized paste printed on the surface thereof and laminating and firing the ceramic green sheet .

Since in the present invention, but the insulation body and a sintered body mainly composed of yttria (yttrium oxide (Y 2 _{O 3)),} in which it was embodied in objects on the laminated structure according Yttria green sheet There is no problem in forming the gas flow path. Moreover, since the insulator forming the electrostatic chuck is made of a yttria sintered body that is superior in corrosion resistance to halogen-based corrosive gases and plasmas compared to alumina ceramics, these corrosive gases and plasmas thereof are used in semiconductor manufacturing. Even if it is used under a process that is exposed to, it can be an electrostatic chuck with a long life. Moreover, since it does not depend on film formation, the crystal grain size of the yttria sintered body can be set to a desired particle size by reducing the particle size of the raw material powder. Accordingly, it is possible to easily prevent the surface roughness from being reduced due to the degranulation.

When the average particle diameter of the yttria sintered body is set to 2.0 μm or less , the surface roughness (surface roughness) of the adsorption surface becomes a problem even if the crystal grains are shed. It is difficult to invite (roughening). That is, in the case of forming an yttria film by thermal spraying, the crystal grains are 10 μm to 50 μm, so that the surface roughness (surface roughness) of the adsorption surface is greatly reduced when the grain is removed. Such a decrease in surface roughness is prevented. In order to obtain such a particle size, it is preferable to use yttria raw material powder having an average particle size of 1.5 μm or less.

The electrostatic electrode is preferably formed by simultaneous firing with an insulator forming an electrostatic chuck, and in that case, it is preferable to use a metallized paste as described in claim 3 . By mixing the yttria powder, it is possible to prevent the insulator from being deformed due to the difference in sintering shrinkage between the insulator and the electrostatic electrode. In the invention described in claim 4, there is a risk of poor conduction unless the tungsten powder or the molybdenum powder is less than 40 vol%. If it exceeds 87 vol%, cracking may occur due to a decrease in the adhesion strength between the electrode and the insulator. Sinterability is improved by setting the average particle size of the tungsten powder or molybdenum powder to 0.8 μm to 7.0 μm and the average particle size of the yttria powder to 0.5 μm to 1.5 μm.

In the invention described in claim 5, there is a risk of poor conduction unless the platinum powder is less than 45 vol% . If the platinum powder exceeds 55 vol%, the insulator may have poor appearance due to deformation such as warping . The average particle size of the platinum powder and 1.0Myuemu～9.0Myuemu, an average particle diameter of yttria powder With 0.5Myuemu～1.5Myuemu, improvement of sinterability is improved.

Embodiments of the present invention will be described in detail with reference to FIGS. FIG. 1 is a central longitudinal sectional view of an electrostatic chuck apparatus 1 including an electrostatic chuck 1a according to the present invention and an enlarged view of a main part thereof. 2 is a cross-sectional view taken along the line AA in FIG. 1, and FIG. 3 is a cross-sectional view for explaining the electrostatic chuck 1a and the base member 21 separated from each other in the electrostatic chuck apparatus of FIG. However, the figure is a schematic diagram and is shown in a simplified manner.

The electrostatic chuck 1a of this embodiment is formed of an insulator (ceramic substrate) 2 having a constant thickness and a substantially circular flat plate shape. The insulator 2 is mainly composed of yttria (yttrium oxide Y ₂ O ₃ ). It is made of a sintered body having a multilayer (multilayer) structure of ceramics. In this example, for example, a disc having a thickness of 3.0 mm and a diameter of 300 mm is used. The insulator 2 has a surface (upper surface) 3 which is a suction surface for sucking and holding a member to be sucked such as a semiconductor wafer (not shown) and has a high degree of flatness and a high surface roughness. In this example, the yttria sintered body constituting the insulator 2 is formed so that the average grain size of the crystal grains is 2.0 μm or less. The insulator 2 has a back surface (lower surface) 4 joined to a surface (upper surface) 23 of a base member 21 made of aluminum or an aluminum alloy to constitute the electrostatic chuck device 1. The insulator 2 is obtained by laminating yttria green sheets containing yttria as a main component, pressing and firing, and has, for example, a 24-layer structure. The composition containing yttria in the yttria green sheet before lamination will be described later.

The insulator 2 includes electrostatic electrodes 5 and 5 for attracting a member to be attracted to the surface 3 (hereinafter also referred to as the attracting surface 3) by electrostatic force. In this example, the electrostatic electrodes 5 and 5 are of a bipolar type that generates an electrostatic force by applying a voltage between the electrodes. The electrostatic electrode 5 and 5, the metallized paste containing powder of tungsten or molybdenum as a main component in the yttria green sheet in advance by printing a predetermined pattern in a layered, laminate of the sheet, is formed by co-firing after crimping ing. Incidentally, as will be described later in detail, the metallizing paste, addition of the metal powder, which yttria powder are mixed a predetermined amount is used.

  Inside the insulator 2, a gas flow path 11 for supplying a temperature control gas between the adsorption surface 3 and the adsorbed member is formed in a tunnel shape. This gas flow path 11 is concentric with the center of the insulator 2 as shown in FIG. 2 in a plan view parallel to the adsorption surface 3 below the electrostatic electrodes 5 and 5 (on the back surface 4 side). A plurality of annular gas passages 12 formed in an annular shape with a space inside and outside are mainly formed as follows. That is, the gas flow path 11 is a connection gas extending radially (in two directions in this embodiment) at equal angular intervals from the center of the insulator 2 in a plan view so as to connect the annular gas flow paths 12 adjacent inside and outside. They are connected by a flow path 13 (see FIG. 2). A supply vertical hole 14 is formed in the center of the back surface 4 of the insulator 2 so as to extend partway toward the adsorption surface 3, and the supply vertical hole 14 is connected to the connection gas flow path 13. On the other hand, in a plurality of positions corresponding to the annular gas flow path 12 in plan view, a plurality of gas jets 15 opened to the adsorption surface 3 are provided, and the gas jets 15 are directed toward the back surface 4. An ejection vertical hole 16 extending partway is connected to the annular gas flow path 12.

Thus, the temperature control gas (for example, He gas) sent into the supply vertical hole 14 at the center of the back surface 4 passes through the connecting gas flow path 13, the annular gas flow path 12, and the ejection vertical hole 16, and the gas ejection port 15. To the suction surface 3 which is the surface of the insulator 2. The insulator 2 of the present embodiment will be described in detail in its manufacturing method, which will be described later in detail. However, the insulator 2 has a laminated structure composed of 24 layers. The connection gas flow path 13 and the annular gas flow path 12 that form the gas flow path 11 are formed in this part (see FIG. 5). Therefore, in this example, the ejection vertical hole 16 is formed so as to penetrate the first layer to the eighth layer (31 to 38) on the surface (upper surface in the drawing) in the thickness direction, and the supply vertical hole 14 is formed from the 17th layer to the eighth layer. 24 layers (47 to 54) are formed through the thickness direction (see FIG. 5). FIG. 5 shows a simplified laminate before firing, in which the ejection vertical hole 16 is shown as 16b and the supply vertical hole 14 is shown as 14b.

  The electrostatic chuck 1a (insulator 2) configured as described above has the back surface 4 on the surface (upper surface) 23 of the base member 21 via an adhesive layer (for example, an adhesive made of silicone resin). Are glued together. In this example, the base member 21 is made of aluminum or an aluminum alloy, has a larger diameter than the insulator 2, and has a disk shape with a constant thickness. The electrostatic chuck 1 a (insulator 2) is joined with its back surface 4 concentrically disposed on the surface 23 of the base member 21. Although not shown, a plurality of electrode terminals for applying to the electrostatic electrodes 5 and 5 are provided at appropriate positions on the back surface 4 of the insulator 2, and pin terminals (not shown) are provided on the electrode terminals. ) Is joined. Such a pin terminal is disposed in a through-hole (not shown) provided in a penetrating manner in the thickness direction of the base member 21, and is configured to apply a voltage by joining an external terminal to the terminal. Yes.

  The base member 21 is provided with a base member side gas flow path 26 made of, for example, a circular vertical hole at a portion (center in plan view) corresponding to the supply vertical hole 14 of the gas flow path 11 provided in the electrostatic chuck 1a. The gas flow path 26 is formed so that gas is supplied via an external pipe (not shown). In addition, a water flow path 27 through which water can be circulated is provided inside the base member 21, and the base member 21 is cooled (water cooled) by circulating water therein. .

  The electrostatic chuck apparatus 1 including the electrostatic chuck 1a of this embodiment is attached to a processing apparatus (processing chamber) and used for use in each process of semiconductor manufacturing. That is, by applying a predetermined DC voltage between the electrostatic electrodes 5 and 5, an electrostatic force is generated to attract and fix the semiconductor wafer to the attracting surface 3, and a desired processing process is performed. In this case, for example, He gas is supplied to the gas flow path 11 and supplied and filled between the suction surface 3 and the wafer from the gas jet port 15 to control the temperature.

In each process of semiconductor manufacturing, the electrostatic chuck 1 of this embodiment is exposed to a halogen-based corrosive gas or its plasma. In this embodiment, the insulator 2 forming the same is sintered with yttria as a main component. Since it is made of a body, it has superior corrosion resistance against corrosive gases and plasma compared to an electrostatic chuck mainly composed of alumina ceramic. In particular, in this embodiment, since the average particle size of the yttria sintered body is set to 2.0 μm or less, the surface roughness (surface roughness) of the adsorption surface 3 is large even if the yttria crystal particles are shed. There is no decline. That is, since it is possible to prevent a decrease (roughening) that becomes a problem of surface roughness of the attracting surface 3, an electrostatic chuck having a long life can be obtained. In the electrostatic chuck 1a, the insulator 2 is made of a sintered body containing yttria (yttrium oxide (Y ₂ O ₃ )) as a main component. There is no problem in the formation of the flow path.

  Here, a test (plasma irradiation test) using the following sample was conducted to confirm the reduction in surface roughness (durability) of the yttria sintered body due to plasma irradiation. The test is as follows. The test sample (yttria sintered body) is obtained by laminating yttria green sheets produced by using various raw material powders (yttria powders) having different particle diameters, thermocompression-bonded, and 1 for each sample. It is a piece. In this test, the crystal grain size in the sintered body was confirmed along with a decrease in the surface roughness of the surface of the insulator. The results are as shown in Table 1. However, the sample is a disk (short cylinder) having a diameter of 20 mm and a thickness of 20 mm using various types of raw material powder (yttria powder) having an average particle diameter of 0.5 to 10.0 μm, and the surface is Ra0. .1 μm mirror finished. The plasma irradiation test uses an RIE (reactive ion etching) apparatus for each of these samples (one each) in an SF6 (sulfur hexafluoride) +02 mixed gas atmosphere, output: 1 KW, time : 5Hr plasma irradiation test was performed 50 times each. The criterion value for the decrease in surface roughness (durability) of the sample surface was determined to be surface roughness Ra of 0.8 μm or less after the test.

  As a result of this test, the surface roughness value by plasma etching satisfied the set reference value, Ra 0.8 μm or less, in the yttria sintered body sample in which the average particle diameter of the raw material powder (yttria powder) was 2.0 μm or less. And in the yttria sintered body sample whose average particle diameter of raw material powder (yttria powder) is 1.5 micrometers or less, Ra0.6micrometer or less and the favorable result which is far from the setting reference value was obtained. Furthermore, in the sample having an average particle size of the raw material powder (yttria powder) of 1.5 μm or less, the average particle size of the crystal particles was 2.0 μm or less. That is, from this test result, it can be said that it is particularly preferable that the yttria sintered body constituting the insulator has an average particle size of 2.0 μm or less in the crystal particles.

(Manufacturing method of the electrostatic chuck of the above embodiment)
Next, a method for manufacturing the electrostatic chuck of the above-described embodiment will be described. However, the manufacturing method is basically the same as the case where the conventional alumina green sheet is manufactured by laminating, pressing and firing, and the green sheet is an yttria green sheet made of a different material. Therefore, in the following manufacturing method, it demonstrates centering on the difference.

(Manufacture of yttria green sheets)
(1) The raw material powder of the yttria green sheet is yttria powder as the main component: 100% by weight, dispersing agent: 2.1% by weight, sintering aid CaCO3 (calcium carbonate): 0.1% Further, ethanol, MEK (methyl ethyl ketone) and toluene were mixed as a solvent, and the mixture was wet pulverized with a ball mill for 54 hours.

  (2) Next, binder: 12% by weight, plasticizer: 6% by weight, and ethanol, MEK (methyl ethyl ketone), and toluene as solvents were added. The mixture was mixed for a time to obtain a fluid slurry. Here, the yttria powder had an average particle size of 0.5 to 1.5 μm.

  (3) Next, this slurry is defoamed under reduced pressure and then poured out into a flat plate shape, slowly cooled, and the solvent is diffused to form first to twenty-fourth layers of an insulator with a thickness of 0.2 mm. Yttria green sheets 31 to 54 are formed (see FIG. 4). Among these, the yttria green sheets 31 to 38 forming the first to eighth layers of the insulator are provided with through holes 16b for forming the ejection vertical holes 16 at predetermined positions, and the seventeenth to twenty-fourth layers of the insulator are provided. In the yttria green sheets 47 to 54 to be formed, a through hole 14b for forming the supply vertical hole 14 is opened. However, in the yttria green sheets 39 to 46 forming the ninth to sixteenth layers of the insulator, the holes (openings) corresponding to the annular gas flow channel 12 and the connecting gas flow channel 13 have shapes (see FIG. 2). Thus, it cannot be formed in the state in which the sheet is punched out. Therefore, this hole is formed by machining as will be described later in the process of laminating yttria green sheets (see FIG. 5).

(Manufacture and printing of metallized paste)
(4) The metallized paste for forming the electrostatic electrode was produced as follows. In this example, a predetermined amount of tungsten powder (or molybdenum powder) was mixed with the raw material powder for yttria green sheet and made into a slurry by the same method as described above to obtain a metallized paste. However, among the material powders constituting the metallized paste, the metal powder (tungsten powder or molybdenum powder) is 40 vol% to 87 vol%, and the remainder is yttria powder (having an average particle diameter of 0.5 to 1.5 μm). It was made to become. This is because, if the metal powder is less than 40 vol%, there is a risk that the fired electrostatic electrode may cause poor conduction, whereas if it exceeds 87 vol%, the adhesion strength between the electrode and the insulator decreases, This is because there is a high possibility that defects such as cracks and cracks will occur in the insulator (yttria sintered body) due to thermal stress (such as tensile stress at the time of temperature rise and compressive stress at the time of temperature drop) in the pasting. The metal powder having a 50% particle size (average particle size): 0.8 μm to 7.0 μm was used.

(5) Then, the patterns 5b and 5b of the electrostatic electrodes 5 and 5 are printed on the fifth layer yttria green sheet 35 from the top of the insulator by screen printing using the metallized paste. On the other yttria green sheets, metallized paste is printed in electrode holes on the back surface of the insulator and through holes opened for vias (not shown) to be connected to the electrode terminals. However, as described in (10), a pin terminal can be directly connected to the electrodes 5 and 5 by brazing or the like, but in this case, although not shown, from the back surface opposite to the suction surface A through hole is made toward the electrostatic electrodes 5 and 5 .

(Lamination of yttria green sheets)
(6) Next, while aligning the yttria green sheets constituting the first to 24th layers, lamination and thermocompression bonding are performed to form a laminated sheet having a total thickness of about 5 mm. However, in this lamination process, the annular gas passage 12 and the connecting gas passage 13 are formed in the state of the yttria green sheet before lamination based on the planar shape of the gas passage, as described above. Can not. For this reason, as shown in FIG. 5A, green sheets 39 to 46 forming the ninth to sixteenth layers on which they are to be formed are laminated to the 17th to 24th green sheets 47 to 54. When the green sheets 39 to 46 are laminated, the green sheets 39 to 46 are formed by cutting into a planar shape as shown in FIG. And after that, the green sheets 31 to 38 of the first layer to the eighth layer are laminated and thermocompression bonded. In addition, if it is a flow path pattern which can form a gas flow path in the state of a yttria green sheet, the gas flow path should just be formed in the stage of each yttria green sheet beforehand.

(Cutting and firing laminated yttria green sheets)
(7) The laminated sheet that has been laminated and thermocompression bonded as described above is cut into a predetermined disk shape (for example, a 430 mm disk shape). By doing so, the laminated sheet (laminated body) shown in FIG.
(8) Next, the cut laminated sheet is baked at 1550 to 1650 ° C. in a reducing atmosphere in the case of a tungsten (or molybdenum) electrode, or in an oxidizing atmosphere in the case of a Pt electrode. Is fired by simultaneous firing. Since the size is reduced by about 30% by this firing, the thickness of the insulator 2 (yttria sintered body) after firing is about 3.5 mm.

(Polishing yttria sintered body)
(9) After firing, both the front and back surfaces of the insulator (yttria sintered body) are polished so that the total thickness of the insulator is 3 mm, the flatness of the surface forming the adsorption surface is 30 μm or less, and the surface roughness Is processed so that Ra becomes 0.1 μm or less.
(10) Next, in the case of a tungsten (or molybdenum) electrode, nickel plating is applied to the electrode terminal of the electrostatic electrode on the back surface of the insulator, and further, a pin terminal is brazed or soldered to this electrode terminal, and platinum In the case of an electrode, a pin terminal is brazed or soldered to the electrode terminal with an active low to complete the insulator 2 that forms an electrostatic chuck. In addition, the pin terminal may be directly brazed or soldered after plating the electrostatic electrode, if necessary, using the through hole opened toward the electrostatic electrode as described above. .

(Joining insulator (yttria sintered body) with base member)
The insulator 2 thus obtained is joined to the surface 23 of the metal base member 21 using, for example, silicon resin. By doing so, the electrostatic chuck device shown in FIG. 1 is obtained.

  The electrostatic chuck of the present example obtained in this way has the following effects. In this embodiment, as the metal powder contained in the metallized paste for the electrostatic electrodes 5 and 5, among the powder materials composed of the metal powder and the yttria powder, either a tungsten powder or a molybdenum powder is used. , 40 vol% to 87 vol%, and the balance was yttria powder. Therefore, as described above, there is no problem of conduction failure between the electrostatic electrodes 5 and 5, and there is no deformation such as warpage due to a difference in firing shrinkage between the insulator 2 and the electrostatic electrodes 5 and 5. I was able to make a chuck. Moreover, in this embodiment, the metal powder has a 50% particle size: 0.8 μm to 7.0 μm, and the yttria powder has a 50% particle size: 0.5 μm to 1.5 μm. It tends to be densified later (sintered body).

(Example 2)
In the first embodiment, the electrostatic electrodes 5 and 5 include tungsten powder (or molybdenum powder) and yttria powder as the powder constituting the metallized paste printed on the ceramic green sheet containing yttria as a main component. However, as the metal powder, platinum powder may be used instead of tungsten powder (or molybdenum powder). By doing in this way, the insulator can be fired simultaneously by air firing. However, when platinum powder is used as the metal powder, the powder constituting the metallized paste is preferably as follows. That is, it is preferable that the platinum powder is contained in an amount of 45 vol% to 55 vol%, and the remainder contains the yttria powder as a main component. This is because there is no conduction failure in this range, and no appearance defects such as warpage during firing occur. In addition, about the particle size of metal powder (platinum powder) and yttria powder,
The platinum powder is 50% particle size: 1.0 μm to 9.0 μm, and the yttria powder is preferably 50% particle size: 0.5 μm to 1.5 μm as described above.

  The present invention is not limited to the contents described above, and can be embodied with appropriate modifications. For example, the above-described electrostatic chuck is embodied as having no heater, but the electrostatic chuck according to the present invention may include a heater inside an insulator (ceramic substrate). The heater is a resistance heating element that generates heat when a voltage is applied, and this may be provided inside the insulator (specifically, between the electrostatic electrode and the back surface of the insulator). If it does in this way, the semiconductor wafer attracted | sucked by the electrostatic chuck can be heated by heating an insulator with this heater. Thereby, the electrostatic chuck can not only cool the semiconductor wafer but also heat it, and has a feature of high versatility.

  In addition, this invention is not limited to the said Example at all, and it cannot be overemphasized that it can implement with a various aspect in the range which does not deviate from the summary of this invention. For example, the present invention can be applied not only to a bipolar electrostatic chuck but also to a monopolar electrostatic chuck.

The center longitudinal cross-sectional view of the electrostatic chuck apparatus of this invention and its principal part enlarged view. AA line sectional view of the electrostatic chuck (insulator) of FIG. FIG. 2 is an explanatory sectional view in which the electrostatic chuck and the base member are separated in the electrostatic chuck device of FIG. 1. The exploded sectional view for explanation before laminating the yttria green sheet which makes an insulator. It is sectional drawing for description of the process of laminating | stacking a yttria green sheet, A is sectional drawing in the middle of lamination | stacking, B is sectional drawing after lamination | stacking.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electrostatic chuck apparatus 1a Electrostatic chuck 2 Insulator 3 Electrostatic chuck adsorption surface (surface)
4 Back surface of electrostatic chuck 5 Electrostatic electrode 11 Gas flow path 15 Gas jet port 21 on suction surface Metal base member

Claims (7)

An electrostatic chuck comprising an electrostatic electrode inside an insulator,
The insulator includes a yttria sintered body obtained by laminating and firing a plurality of ceramic green sheets containing yttria powder as a raw material powder and calcium carbonate as a sintering aid, and the average grain size of the crystal particles is 0. Made of a laminate having a thickness of 0.8 μm to 2.6 μm ,
The electrostatic electrode comprises a metallized layer formed by printing a metallized paste on the surface of the ceramic green sheet and firing simultaneously with the green sheet,
The metallized paste includes, as a raw material powder, one type of metal powder selected from tungsten powder, molybdenum powder, and platinum powder, and yttria powder . The electrostatic chuck according to claim 1, wherein the raw material powder of the ceramic green sheet is yttria powder having an average particle diameter of 0.5 μm to 2.0 μm . The metallized paste includes, as a raw material powder, a tungsten powder having an average particle size of 0.8 μm to 7.0 μm, a molybdenum powder having an average particle size of 0.8 μm to 7.0 μm, and a platinum powder having an average particle size of 1.0 μm to 9.0 μm one metal powder and, according to claim 1 or 2 electrostatic chuck according, characterized in that it comprises a yttria powder having an average particle size 0.5μm~1.5μm selected from. The electrostatic chuck according to any one of claims 1 to 3, wherein the raw material powder of the metallized paste contains 40 vol% to 87 vol% of tungsten powder or molybdenum powder, and the remainder is yttria powder. . The electrostatic chuck according to any one of claims 1 to 3, wherein the raw material powder of the metallized paste contains 45 vol% to 55 vol% of platinum powder, and the rest is yttria powder . An electrostatic chuck comprising a metal base member and an electrostatic chuck bonded to the metal base member, wherein the electrostatic chuck is the one described in any one of claims 1 to 5. Chuck device. A method for manufacturing the electrostatic chuck according to claim 1, comprising:
A ceramic green sheet containing yttria powder having an average particle size of 0.5 μm to 2.0 μm as a raw material powder and calcium carbonate as a sintering aid and the ceramic green sheet having a metallized paste printed on the surface are laminated and fired. A method for manufacturing an electrostatic chuck, characterized in that:

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