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JP4694276B2 - Method for manufacturing photodetection semiconductor device - Google Patents

Method for manufacturing photodetection semiconductor device Download PDF

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Publication number
JP4694276B2
JP4694276B2 JP2005172707A JP2005172707A JP4694276B2 JP 4694276 B2 JP4694276 B2 JP 4694276B2 JP 2005172707 A JP2005172707 A JP 2005172707A JP 2005172707 A JP2005172707 A JP 2005172707A JP 4694276 B2 JP4694276 B2 JP 4694276B2
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resin
photodetection
semiconductor device
flexible substrate
semiconductor element
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JP2006351630A (en
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吉郎 岡田
克彦 香西
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Aoi Electronics Co Ltd
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Aoi Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Description

本発明は、光を検出する光検出半導体装置の製造方法に関する。
The present invention relates to a method of manufacturing a photodetection semiconductor device that detects light .

近年、光ディスクの記録密度が向上し、光ディスクの情報を読み込むために使用されるレーザ光の波長が短くなっている。レーザ光を検出する光ピックアップ半導体装置は、その光検出部が樹脂で覆われており、レーザ光の波長が短くなるほど、樹脂が劣化しやすい。そこで、従来から、光検出部を樹脂で覆うことなく露出させた光検出半導体装置が知られている（特許文献１）。
特開２００３−２７３３７１号公報 In recent years, the recording density of optical discs has improved, and the wavelength of laser light used for reading information on optical discs has become shorter. In the optical pickup semiconductor device that detects laser light, the light detection portion is covered with resin, and the resin is more likely to deteriorate as the wavelength of the laser light becomes shorter. Therefore, conventionally, a photodetection semiconductor device in which the photodetection portion is exposed without being covered with resin is known (Patent Document 1).
JP 2003-273371 A

上記特許文献１の光検出半導体装置では、光検出部を樹脂によりパッケージングする際、樹脂が光検出部を覆う前に樹脂を硬化させたり、光検出部を覆っている樹脂を硬化前に吸引したり、面倒な作業が不可避であった。   In the photodetection semiconductor device of Patent Document 1, when the photodetection unit is packaged with resin, the resin is cured before the resin covers the photodetection unit, or the resin covering the photodetection unit is sucked before curing. Or troublesome work was inevitable.

（１）請求項１の発明の光検出半導体装置の製造方法は、電鋳による外部電極が設けられた可撓性基板上に、光検出部の受光面が可撓性基板に対向するように光検出半導体素子を搭載し、可撓性基板と光検出部の受光面との間の空間を樹脂流入防止部材で密閉し、その後、光検出半導体素子を可撓性基板上で樹脂封止することにより、可撓性基板上に複数の光検出半導体素子がマトリクス状に配設された樹脂封止体を作製し、可撓性基板を樹脂封止体から剥離し、個片化することを特徴とする。
（２）請求項２の発明は、請求項１に記載の光検出半導体装置の製造方法において、樹脂流入防止部材はアンダーフィル、異方性導電フィルムおよび異方性導電ペーストのいずれかであることを特徴とする。
（３）請求項３の発明の光検出半導体装置の製造方法は、電鋳による外部電極が設けられた可撓性基板上に、光検出部の受光面が可撓性基板に対向するように光検出半導体素子を搭載し、可撓性基板と光検出部の受光面との間の空間を樹脂流入防止材料で充填し、その後、光検出半導体素子を可撓性基板上で樹脂封止することにより、可撓性基板上に複数の光検出半導体素子がマトリクス状に配設された樹脂封止体を作製し、可撓性基板を樹脂封止体から剥離した後、樹脂流入防止材料を溶出し、そして個片化すること、または、個片化し、そして樹脂流入防止材料を溶出することを特徴とする。
（４）請求項４の発明は、請求項３に記載の光検出半導体装置の製造方法において、樹脂流入防止材料はレジストであることを特徴とする。 (1) In the method for manufacturing a photodetecting semiconductor device according to the first aspect of the present invention, the light receiving surface of the photodetecting portion faces the flexible substrate on the flexible substrate provided with the external electrode by electroforming. The photodetection semiconductor element is mounted, the space between the flexible substrate and the light receiving surface of the photodetection unit is sealed with a resin inflow prevention member, and then the photodetection semiconductor element is resin-sealed on the flexible substrate. By manufacturing a resin sealing body in which a plurality of light detection semiconductor elements are arranged in a matrix on a flexible substrate, the flexible substrate is peeled from the resin sealing body and separated into individual pieces. Features.
(2) The invention of claim 2 is the method of manufacturing a photodetecting semiconductor device according to claim 1, wherein the resin inflow prevention member is any one of an underfill, an anisotropic conductive film, and an anisotropic conductive paste. It is characterized by.
(3) In the method for manufacturing a photodetection semiconductor device according to the third aspect of the present invention, the light-receiving surface of the photodetection unit faces the flexible substrate on the flexible substrate on which the external electrode is formed by electroforming. The photodetection semiconductor element is mounted, the space between the flexible substrate and the light receiving surface of the photodetection portion is filled with a resin inflow prevention material, and then the photodetection semiconductor element is resin-sealed on the flexible substrate. Thus, a resin sealing body in which a plurality of photodetecting semiconductor elements are arranged in a matrix on a flexible substrate is manufactured, and after the flexible substrate is peeled from the resin sealing body, a resin inflow prevention material is used. Elution and singulation, or singulation and elution of resin inflow prevention material.
(4) The invention of claim 4 is the method of manufacturing a photodetection semiconductor device according to claim 3, wherein the resin inflow prevention material is a resist .

本発明によれば、可撓性を有する可撓性基板上に形成された電鋳製外部電極に光検出半導体素子を固着し、その後、その光検出部の周囲に樹脂流入防止部材を配設して樹脂が流れ込まないようにした上で検出半導体素子を樹脂で封止し、あるいは、可撓性を有する可撓性基板上に形成された電鋳製外部電極に光検出半導体素子を固着し、その光検出部を樹脂流入防止材料で覆った状態で樹脂封止し、その後、樹脂流入防止材料を溶出して除去するようにした。したがって、従来の工法に比べて、簡単で廉価な工程で光検出部と対向する領域に樹脂が介在しない受光開口を形成することができる。   According to the present invention, a photodetection semiconductor element is fixed to an electroformed external electrode formed on a flexible substrate having flexibility, and then a resin inflow prevention member is disposed around the photodetection portion. Then, the detection semiconductor element is sealed with resin after preventing the resin from flowing in, or the light detection semiconductor element is fixed to an electroformed external electrode formed on a flexible substrate having flexibility. The photodetection portion was covered with a resin inflow prevention material and sealed with resin, and then the resin inflow prevention material was eluted and removed. Therefore, it is possible to form a light receiving opening in which no resin is interposed in a region facing the photodetecting portion by a simple and inexpensive process as compared with the conventional method.

−第１の実施の形態−
本発明の第１の実施形態の光検出半導体装置について図１を参照して説明する。図１（ａ）は光検出半導体装置１の裏面図であり、図１（ｂ）は図１（ａ）のＡ−Ａ’線断面図である。 -First embodiment-
A photodetection semiconductor device according to a first embodiment of the present invention will be described with reference to FIG. FIG. 1A is a back view of the photodetection semiconductor device 1, and FIG. 1B is a cross-sectional view taken along the line AA ′ of FIG.

図１において、符号１は光検出半導体装置、２は光検出半導体素子である。光検出半導体装置１には受光開口１Ａが開口しており、光検出半導体素子２には光検出部２Ａが設けられている。受光開口１Ａを介してレーザ光などの光を光検出部２Ａで受光して検出する。光検出半導体素子２の光検出部２Ａ側には外部電極３が配設されており、光検出半導体素子２と外部電極３とはＡｕからなるバンプ５によって接続している。また、光検出部２Ａの外周にはエポキシ樹脂からなるアンダーフィル４が設けられている。すなわち、このアンダーフィル４は、光検出半導体素子２とバンプ５との接続部、バンプ５、および外部電極３を覆うように形成されている。光検出半導体素子２とアンダーフィル４とはエポキシ樹脂からなる樹脂６によって封止されている。   In FIG. 1, reference numeral 1 denotes a photodetection semiconductor device, and 2 denotes a photodetection semiconductor element. The light detection semiconductor device 1 has a light receiving opening 1A, and the light detection semiconductor element 2 is provided with a light detection unit 2A. Light such as laser light is received and detected by the light detector 2A through the light receiving opening 1A. An external electrode 3 is disposed on the light detection portion 2A side of the light detection semiconductor element 2, and the light detection semiconductor element 2 and the external electrode 3 are connected by a bump 5 made of Au. An underfill 4 made of an epoxy resin is provided on the outer periphery of the light detection unit 2A. That is, the underfill 4 is formed so as to cover the connection portion between the photodetection semiconductor element 2 and the bump 5, the bump 5, and the external electrode 3. The photodetection semiconductor element 2 and the underfill 4 are sealed with a resin 6 made of an epoxy resin.

光検出半導体装置１の裏面では、光検出半導体素子２の光検出部２Ａが露出しており、受光開口１Ａに入射した光は、光検出半導体素子２の光検出部２Ａで直接受光される。また、外部電極３も露出しており、外部電極３と回路基板とが半田により接合されて、光検出半導体装置１が回路基板に実装される。   On the back surface of the photodetection semiconductor device 1, the photodetection unit 2 </ b> A of the photodetection semiconductor element 2 is exposed, and light incident on the light receiving opening 1 </ b> A is directly received by the photodetection unit 2 </ b> A of the photodetection semiconductor element 2. Further, the external electrode 3 is also exposed, and the external electrode 3 and the circuit board are joined together by solder, and the photodetection semiconductor device 1 is mounted on the circuit board.

外部電極３の構造について図２を参照して説明する。図２は外部電極３の構造を説明するための図である。外部電極３は主に電鋳により形成されたＮｉ層２１からなる。Ｎｉ層２１の厚さは３０〜６０μｍである。Ｎｉ層２１の上下には、外部電極３とバンプ５とを接続するため、および外部電極３の半田濡れ性を改善するためにＡｕ層２３，２５が設けられる。また、Ｎｉ層２１とＡｕ層２３，２５との間には中間層として、Ｐｄ層２２，２４が設けられる。   The structure of the external electrode 3 will be described with reference to FIG. FIG. 2 is a diagram for explaining the structure of the external electrode 3. The external electrode 3 is composed of a Ni layer 21 mainly formed by electroforming. The thickness of the Ni layer 21 is 30 to 60 μm. Au layers 23 and 25 are provided above and below the Ni layer 21 in order to connect the external electrodes 3 and the bumps 5 and to improve the solder wettability of the external electrodes 3. Further, Pd layers 22 and 24 are provided as intermediate layers between the Ni layer 21 and the Au layers 23 and 25.

次に、上述した光検出半導体装置１の製造方法について、図３〜図７を参照して説明する。この製造方法は、外部電極用金属層形成工程と、アンダーフィル塗布工程と、半導体素子実装工程と、樹脂封止工程と、金属板剥離工程と、分割工程とを含み、１つの金属板上に複数の光検出半導体装置１を同時に作製するものである。以下、各工程を工程順に説明する。   Next, a method for manufacturing the above-described photodetection semiconductor device 1 will be described with reference to FIGS. This manufacturing method includes a metal layer forming process for external electrodes, an underfill coating process, a semiconductor element mounting process, a resin sealing process, a metal plate peeling process, and a dividing process on one metal plate. A plurality of photodetection semiconductor devices 1 are manufactured simultaneously. Hereinafter, each process will be described in the order of processes.

（イ）外部電極用金属層形成工程
外部電極用金属層形成工程について、図３（ａ）〜（ｃ）を参照して説明する。
図３（ａ）に示すように、可撓性を有する金属板３１の両面にレジスト３２を塗布またはラミネートする。金属板３１は、厚さ約０．１ｍｍの平板状のＪＩＳ規格のＳＵＳステンレス鋼板またはＣｕ板などの金属薄板からなる。次に、アクリルフィルムベースのパターンマスクフィルムを密着させ、紫外線により露光する。そして、現像し、図３（ｂ）に示すように、外部電極用金属層を形成する部分のレジスト３２を除去する。金属板３１の一方の面には外部電極用金属層を形成しないので、レジスト３２によって全面が覆われたままである。次に、Ｈ２ＳＯ４−Ｈ２Ｏ２やＮａ２Ｓ２Ｏ８などの酸化性溶液により、レジスト３２を除去した部分の金属板３１面のソフトエッチングを行う。そして、硫酸などの酸で酸洗いし、酸活性処理を行う。 (A) External electrode metal layer formation process
The external electrode metal layer forming step will be described with reference to FIGS.
As shown in FIG. 3A, a resist 32 is applied or laminated on both surfaces of a flexible metal plate 31. The metal plate 31 is made of a thin metal plate such as a flat JIS standard SUS stainless steel plate or Cu plate having a thickness of about 0.1 mm. Next, an acrylic film-based pattern mask film is brought into intimate contact and exposed to ultraviolet rays. Then, development is performed, and as shown in FIG. 3B, a portion of the resist 32 where the external electrode metal layer is to be formed is removed. Since the external electrode metal layer is not formed on one surface of the metal plate 31, the entire surface remains covered with the resist 32. Next, the surface of the metal plate 31 where the resist 32 has been removed is soft etched with an oxidizing solution such as H 2 SO 4 —H 2 O 2 or Na 2 S 2 O 8 . And it pickles with acids, such as a sulfuric acid, and performs an acid activation process.

酸活性処理を行った金属板３１に外部電極用金属層３３を形成する。外部電極用金属層３３は次のようにして形成する。金属板３１をＡｕめっき溶液に浸漬し、めっきにより金属基板３１にＡｕ層２５を形成する。次にＰｄめっき溶液に浸漬し、めっきによりＡｕ層２５上にＰｄ層２４を形成する。次にＮｉめっき溶液に浸漬して金属板３１に電力を供給して電鋳を行い、Ｐｄ層２４上にＮｉ層２１を形成する。次に、Ｐｄめっき溶液に金属板３１を浸漬し、めっきによりＮｉ層２１上にＰｄ層２２を形成する。最後にＡｕめっき溶液に金属板３１を浸漬し、めっきによりＰｄ層上２２にＡｕ層２３を形成する。このようにして、図３（ｃ）に示すように、金属板３１に外部電極用金属層３３を形成する。そして、レジスト３２を金属板３１から剥離する。   An external electrode metal layer 33 is formed on the metal plate 31 subjected to the acid activation treatment. The external electrode metal layer 33 is formed as follows. The metal plate 31 is immersed in an Au plating solution, and the Au layer 25 is formed on the metal substrate 31 by plating. Next, it is immersed in a Pd plating solution, and a Pd layer 24 is formed on the Au layer 25 by plating. Next, the Ni layer 21 is formed on the Pd layer 24 by dipping in a Ni plating solution and supplying power to the metal plate 31 to perform electroforming. Next, the metal plate 31 is immersed in a Pd plating solution, and the Pd layer 22 is formed on the Ni layer 21 by plating. Finally, the metal plate 31 is immersed in the Au plating solution, and the Au layer 23 is formed on the Pd layer 22 by plating. In this way, the external electrode metal layer 33 is formed on the metal plate 31 as shown in FIG. Then, the resist 32 is peeled from the metal plate 31.

（ロ）アンダーフィル塗布工程
アンダーフィル塗布工程について、図３（ｄ）および図４を参照して説明する。図４は金属板３１の部分領域を示すものである。
次に金属板２１にアンダーフィル３４を塗布する。アンダーフィル３４は、図３（ｃ）に示すように外部電極用金属層３３を覆うように塗布される。アンダーフィル３４は、図４に示すようにノズル４１から吐出される。ノズル４１は、アンダーフィルを塗布しながら光検出半導体装置１の外部電極３を形成する１組の外部電極用金属層３３上を略正方形を描くように移動する。そして、金属板３１上に平面視略正方形額縁形状のアンダーフィル３４が形成される。一つまたは複数のノズル４１を使用して、金属板３１上に複数並列配置された複数組の外部電極用金属層３３について同様な方法で次々とアンダーフィル３４を形成する。 (B) Underfill application process The underfill application process will be described with reference to FIG. 3 (d) and FIG. FIG. 4 shows a partial region of the metal plate 31.
Next, an underfill 34 is applied to the metal plate 21. The underfill 34 is applied so as to cover the external electrode metal layer 33 as shown in FIG. The underfill 34 is discharged from the nozzle 41 as shown in FIG. The nozzle 41 moves so as to draw a substantially square shape on the set of external electrode metal layers 33 forming the external electrodes 3 of the light detection semiconductor device 1 while applying underfill. An underfill 34 having a substantially square frame shape in plan view is formed on the metal plate 31. Using one or a plurality of nozzles 41, underfills 34 are successively formed in the same manner on a plurality of sets of external electrode metal layers 33 arranged in parallel on the metal plate 31.

（ハ）半導体素子実装工程
半導体素子実装工程について、図３（ｅ）および図５を参照して説明する。
光検出半導体素子２の光検出部２Ａ側には不図示の端子部が設けられており、この端子部には予めバンプ５を形成しておく。そして、バンプ５が外部電極用金属層３３上に位置するように光検出半導体素子２を、図３（ｅ）に示すように金属板３１に搭載する。金属板３１には、パターニングされた外部電極用金属層３３が複数並列配置されており、それぞれのパターンニングされた外部電極用金属層３３上に光検出半導体素子２が隣接して搭載される。そして、搭載された光検出半導体素子２には、図５に示すようにボンディングツール５１が光検出半導体素子２に当てられる。ボンディングツール５１で押圧しながら超音波振動を光検出半導体素子２に加えると、バンプ５と外部電極用金属層３３とが接続する。この工程で、金属板３１と額縁形状のアンダーフィル３４と光検出半導体素子２とにより囲まれた受光開口１Ａが、すなわち、光検出半導体素子２の光検出部２Ａが密閉される。この後、金属板３１を加熱してアンダーフィル３４を硬化する。 (C) Semiconductor Element Mounting Process The semiconductor element mounting process will be described with reference to FIG.
A terminal portion (not shown) is provided on the light detection portion 2A side of the light detection semiconductor element 2, and a bump 5 is formed in advance on this terminal portion. Then, the photodetecting semiconductor element 2 is mounted on the metal plate 31 as shown in FIG. 3E so that the bumps 5 are positioned on the external electrode metal layer 33. A plurality of patterned external electrode metal layers 33 are arranged in parallel on the metal plate 31, and the photodetection semiconductor element 2 is mounted adjacent to each of the patterned external electrode metal layers 33. Then, a bonding tool 51 is applied to the photodetection semiconductor element 2 as shown in FIG. When ultrasonic vibration is applied to the photodetecting semiconductor element 2 while being pressed by the bonding tool 51, the bump 5 and the external electrode metal layer 33 are connected. In this step, the light receiving opening 1A surrounded by the metal plate 31, the frame-shaped underfill 34, and the light detection semiconductor element 2, that is, the light detection portion 2A of the light detection semiconductor element 2 is sealed. Thereafter, the metal plate 31 is heated to cure the underfill 34.

（ニ）樹脂封止工程
樹脂封止工程について、図６（ａ）および図７を参照して説明する。
樹脂封止工程では、図６（ａ）に示すように光検出半導体素子２およびアンダーフィル３４を樹脂６によって封止する。樹脂封止は次のようにして行う。図７に示すように、金属板３１の光検出半導体素子２が実装などされている面に金型７１を被せる。そして、樹脂６を金型７１内に注入し、金属板３１に実装された複数の光検出半導体素子２などを一括に封止する。この樹脂封止工程では、金型７１は上型の役割を果たし、金属板３１は下型の役割を果たす。このとき、光検出半導体素子２の光検出部２Ａは額縁形状のアンダーフィル３４などによって密閉されているので、光検出部２Ａは注入された樹脂６によって覆われない。 (D) Resin sealing process The resin sealing process is demonstrated with reference to Fig.6 (a) and FIG.
In the resin sealing step, the photodetecting semiconductor element 2 and the underfill 34 are sealed with the resin 6 as shown in FIG. Resin sealing is performed as follows. As shown in FIG. 7, a mold 71 is placed on the surface of the metal plate 31 on which the photodetection semiconductor element 2 is mounted. Then, the resin 6 is injected into the mold 71 and the plurality of light detection semiconductor elements 2 mounted on the metal plate 31 are sealed together. In this resin sealing step, the mold 71 serves as an upper mold, and the metal plate 31 serves as a lower mold. At this time, since the light detection portion 2A of the light detection semiconductor element 2 is sealed with a frame-shaped underfill 34 or the like, the light detection portion 2A is not covered with the injected resin 6.

（ホ）金属板剥離工程
金属板剥離工程について、図６（ｂ）を参照して説明する。
樹脂６による封止が完了した後は、図６（ｂ）に示すように、光検出半導体素子２などが封止された樹脂６から金属板３１を剥離する。金属板３１は可撓性を有するので、容易に剥離することができる。金属板３１を剥離すると、光検出半導体素子２の光検出部２Ａが露出する。この金属板３１を剥離したものを以下、樹脂封止体６０と呼ぶ。 (E) Metal plate peeling process A metal plate peeling process is demonstrated with reference to FIG.6 (b).
After the sealing with the resin 6 is completed, as shown in FIG. 6B, the metal plate 31 is peeled from the resin 6 in which the photodetection semiconductor element 2 and the like are sealed. Since the metal plate 31 has flexibility, it can be easily peeled off. When the metal plate 31 is peeled off, the light detection portion 2A of the light detection semiconductor element 2 is exposed. Hereinafter, the metal plate 31 is peeled off and is referred to as a resin sealing body 60.

（ヘ）分割工程
分割工程について、図６（ｂ），（ｃ）を参照して説明する。
図６（ｂ）の１点鎖線６１に沿って、ダイヤモンドブレード・ダイシング法で樹脂封止体６０をダイシングする。そして、図６（ｃ）に示すように、一つの樹脂封止体６０が分割され、光検出半導体装置１が完成する。 (F) Division process A division process is explained with reference to Drawing 6 (b) and (c).
The resin sealing body 60 is diced by the diamond blade dicing method along the alternate long and short dash line 61 in FIG. Then, as shown in FIG. 6C, one resin sealing body 60 is divided, and the photodetection semiconductor device 1 is completed.

以上のようにして作製された光検出半導体装置１は、図８に示すような穴８１Ａが設けられた回路基板８１に実装される。光検出半導体装置１は、回路基板８１と半田８２によって接続される。この場合、光ディスクの情報を読み込むために照射されたレーザ光ＬＢは、光ディスク面を反射して、回路基板８１の穴８１Ａを通過し、光検出半導体装置１の受光開口１Ａに入射する。受光開口１Ａに入射したレーザ光ＬＢは樹脂６内を通過せず、直接、光検出半導体素子２の光検出部２Ａに入射する。このため、レーザ光ＬＢによって光検出部２Ａを覆っている樹脂が劣化し、光検出半導体装置が使用不可能となることはない。   The photodetection semiconductor device 1 manufactured as described above is mounted on a circuit board 81 provided with a hole 81A as shown in FIG. The photodetection semiconductor device 1 is connected to the circuit board 81 and the solder 82. In this case, the laser beam LB irradiated for reading information on the optical disk reflects the optical disk surface, passes through the hole 81A of the circuit board 81, and enters the light receiving opening 1A of the light detection semiconductor device 1. The laser beam LB incident on the light receiving opening 1A does not pass through the resin 6 and directly enters the light detection portion 2A of the light detection semiconductor element 2. For this reason, the resin that covers the light detection unit 2A by the laser light LB is not deteriorated, and the light detection semiconductor device is not disabled.

以上の第１の実施形態による光検出半導体装置１の製造方法は次のような作用効果を奏する。
（１）金属板３１上に電鋳による外部電極３を設け、その上に光検出半導体素子２をバンプ５により搭載し、金属板３１と光検出部２Ａの受光面との間の空間１Ａをアンダーフィル４で密閉し、その後、光検出半導体素子２を金属板３１上で樹脂封止することにより、金属板３１上に複数の光検出半導体素子２がマトリクス状に配設された樹脂封止体６０を作製し、その金属板３１を樹脂封止体６０から剥離し、個片化して光検出半導体装置１を作製するようにした。したがって、光検出部２Ａへの光路に樹脂が存在しない光検出半導体装置１を簡単に作製することができる。
（２）全工程を通じて光検出半導体素子２の光検出部２Ａに対して何も接触しないので、光検出部２Ａを傷つけることはない。すなわち、従来例とは異なり、光検出半導体素子２の光検出部２Ａの受光面上に樹脂を硬化前に吸引するためなどに使用するピンなどを近づける工程がないので、光検出部２Ａを傷つけるおそれもない。 The manufacturing method of the photodetection semiconductor device 1 according to the first embodiment described above has the following operational effects.
(1) The external electrode 3 by electroforming is provided on the metal plate 31, and the photodetection semiconductor element 2 is mounted thereon by the bumps 5. A space 1A between the metal plate 31 and the light receiving surface of the photodetection unit 2A is formed. Resin sealing in which a plurality of light detection semiconductor elements 2 are arranged in a matrix on the metal plate 31 by sealing with the underfill 4 and then sealing the light detection semiconductor elements 2 on the metal plate 31 with resin. The body 60 was produced, and the metal plate 31 was peeled from the resin sealing body 60 and separated into pieces to produce the photodetection semiconductor device 1. Therefore, the photodetection semiconductor device 1 in which no resin exists in the optical path to the photodetection unit 2A can be easily manufactured.
(2) Since nothing is in contact with the light detection unit 2A of the light detection semiconductor element 2 throughout the entire process, the light detection unit 2A is not damaged. That is, unlike the conventional example, there is no step of bringing a pin used for sucking the resin before curing on the light receiving surface of the light detecting portion 2A of the light detecting semiconductor element 2, so that the light detecting portion 2A is damaged. There is no fear.

−第２の実施の形態−
本発明の第２の実施形態の光検出半導体装置９の構造について、図９を参照して説明する。第１の実施形態の半導体装置１と共通する部分は同じ符号を使用し、第１の実施形態の半導体装置１との相違点を主に説明する。図９（ａ）は光検出半導体装置９の裏面図であり、図９（ｂ）は図９（ａ）のＢ−Ｂ’線断面図である。 -Second Embodiment-
The structure of the photodetection semiconductor device 9 according to the second embodiment of the present invention will be described with reference to FIG. Portions common to the semiconductor device 1 of the first embodiment are denoted by the same reference numerals, and differences from the semiconductor device 1 of the first embodiment are mainly described. FIG. 9A is a rear view of the light detection semiconductor device 9, and FIG. 9B is a cross-sectional view taken along the line BB ′ of FIG. 9A.

図９において、光検出半導体素子２の光検出部２Ａの外周には、樹脂６の光検出部２Ａへの流入を防ぐために、額縁形状のレジスト部１０と金属部１１とが設けられている。光検出半導体装置１の裏面には、光検出半導体素子２の光検出部２Ａとともに、額縁形状の金属部１１が露出している。この金属部１１は塗布したレジストが広がるのを防止するためのものであり、回路基板との電気的接触には使用されない。金属部１１の層構造は図２の外部電極３と同じである。   In FIG. 9, a frame-shaped resist portion 10 and a metal portion 11 are provided on the outer periphery of the light detection portion 2 </ b> A of the light detection semiconductor element 2 in order to prevent the resin 6 from flowing into the light detection portion 2 </ b> A. On the back surface of the photodetection semiconductor device 1, the frame-shaped metal portion 11 is exposed together with the photodetection portion 2A of the photodetection semiconductor element 2. The metal part 11 is for preventing the applied resist from spreading and is not used for electrical contact with the circuit board. The layer structure of the metal part 11 is the same as that of the external electrode 3 in FIG.

次に本発明の第２の実施形態の光検出半導体装置９の製造方法について、図１０および図１１を参照して説明する。第２の実施形態の光検出半導体装置９の製造方法は、外部電極用金属層形成工程と、レジスト塗布工程と、半導体素子実装工程と、樹脂封止工程と、金属板剥離工程と、レジスト除去工程と、分割工程とからなる。第１の実施形態の半導体装置１の製造方法と共通する部分は同じ符号を使用し、第１の実施形態の半導体装置１の製造方法との相違点を主に説明する。   Next, a method for manufacturing the photodetection semiconductor device 9 according to the second embodiment of the present invention will be described with reference to FIGS. The manufacturing method of the photodetection semiconductor device 9 of the second embodiment includes an external electrode metal layer forming step, a resist coating step, a semiconductor element mounting step, a resin sealing step, a metal plate peeling step, and a resist removal. It consists of a process and a division process. Portions common to the method for manufacturing the semiconductor device 1 of the first embodiment are denoted by the same reference numerals, and differences from the method for manufacturing the semiconductor device 1 of the first embodiment are mainly described.

（イ）外部電極用金属層形成工程
第１の実施形態と同様な方法で、金属板３１上に外部電極用金属層３３と額縁状の金属層１０１とが形成される。外部電極用金属層３３は光検出半導体装置９の外部電極３を形成し、金属層１０１は平面視略正方形の額縁形状である金属部１１を形成するものである。外部電極用金属層３３と金属層１０１とはパターンが異なるだけで、電極の層構造など、その他の点は同一の構造を有する。 (A) External electrode metal layer forming step The external electrode metal layer 33 and the frame-shaped metal layer 101 are formed on the metal plate 31 in the same manner as in the first embodiment. The external electrode metal layer 33 forms the external electrode 3 of the photodetection semiconductor device 9, and the metal layer 101 forms the metal portion 11 having a frame shape having a substantially square shape in plan view. The external electrode metal layer 33 and the metal layer 101 have the same structure except for the pattern, and other points such as the electrode layer structure.

（ロ）レジスト塗布工程
レジスト塗布工程について、図１０（ｄ），（ｅ）を参照して説明する。
図１０（ｄ）に示すように、金属層１０１の額縁内にアクリルベースのレジスト１０２を塗布する。金属層１０１は額縁形状しているため、塗布したレジスト１０２が広がるのを防止する。このレジスト１０２は、図１０（ｅ）に示すように光検出半導体素子２を搭載したとき、光検出半導体素子２の光検出部２Ａおよびその周辺を覆い、光検出部２Ａを保護する。 (B) Resist application process The resist application process will be described with reference to FIGS.
As shown in FIG. 10 (d), an acrylic-based resist 102 is applied in the frame of the metal layer 101. Since the metal layer 101 has a frame shape, the applied resist 102 is prevented from spreading. When the photodetection semiconductor element 2 is mounted as shown in FIG. 10E, the resist 102 covers the photodetection section 2A and the periphery of the photodetection semiconductor element 2 and protects the photodetection section 2A.

（ハ）半導体素子実装工程
図１０（ｅ）に示すように、第１の実施形態と同様にして光検出半導体素子２をバンプ５により外部電極３である外部電極用金属層３３上に固着する。 (C) Semiconductor Element Mounting Step As shown in FIG. 10E, the photodetecting semiconductor element 2 is fixed on the external electrode metal layer 33, which is the external electrode 3, by the bump 5 in the same manner as in the first embodiment. .

（ニ）樹脂封止工程
樹脂封止工程について、図１１（ａ）を参照して説明する。
樹脂封止工程において、光検出半導体素子２の光検出部２Ａはレジスト１０２で覆われているため、図１１（ａ）に示すように光検出部２Ａは樹脂６に覆われない。 (D) Resin sealing process The resin sealing process is demonstrated with reference to Fig.11 (a).
In the resin sealing step, since the light detection portion 2A of the light detection semiconductor element 2 is covered with the resist 102, the light detection portion 2A is not covered with the resin 6 as shown in FIG.

（ホ）金属板剥離工程
図１１（ｂ）に示すように、第１の実施形態と同様にして光検出半導体素子２などが封止された樹脂６から金属板３１を剥離する。この金属板３１を剥離したものを以下、樹脂封止体１１０と呼ぶ。 (E) Metal Plate Stripping Step As shown in FIG. 11B, the metal plate 31 is stripped from the resin 6 in which the photodetection semiconductor element 2 and the like are sealed, as in the first embodiment. Hereinafter, the metal plate 31 is peeled off and referred to as a resin sealing body 110.

（ヘ）レジスト除去工程
レジスト除去工程について、図１１（ｂ），（ｃ）を参照して説明する。
図１１（ｂ）に示す樹脂封止体１１０の金属板剥離面１１１に紫外線を照射する。紫外線を照射すると、金属層１０１の覆われていないレジスト１０２は可溶性になり、溶出して除去することができる。一方、金属層１０１に覆われているレジスト１０２には紫外線は当たらないため、溶出しない。そして、現像すると図１１（ｃ）に示すように光検出部２Ａを覆っていたレジスト１０２は溶出され、光検出部２Ａは何も覆われていない状態になる。 (F) Resist removal step The resist removal step will be described with reference to FIGS.
The metal plate peeling surface 111 of the resin sealing body 110 shown in FIG. When irradiated with ultraviolet rays, the resist 102 not covered with the metal layer 101 becomes soluble and can be eluted and removed. On the other hand, the resist 102 covered with the metal layer 101 is not eluted because it is not exposed to ultraviolet rays. When developed, the resist 102 covering the light detection unit 2A is eluted as shown in FIG. 11C, and the light detection unit 2A is not covered.

（ト）分割工程
図１１（ｃ）に示すように、第１の実施形態と同様にして１点鎖線１１２に沿って、ダイヤモンドブレード・ダイシング法で樹脂封止体１１０をダイシングする。そして、図１０（ｄ）に示すように、一つの樹脂封止体１１０が分割され、光検出半導体装置９が完成する。 (G) Dividing Step As shown in FIG. 11C, the resin sealing body 110 is diced along the alternate long and short dash line 112 by the diamond blade dicing method as in the first embodiment. Then, as shown in FIG. 10D, one resin sealing body 110 is divided, and the photodetection semiconductor device 9 is completed.

以上の第２の実施形態による半導体装置９の製造方法によれば、第１の実施形態の光検出半導体装置１の製造方法と同様に、簡単にしかも一度に大量に光検出部２Ａを樹脂で覆うことのない光検出半導体装置９を作製することができる。また、光検出半導体素子２の光検出部２Ａは製造中、レジスト１０２によって保護されているので光検出部２Ａを傷つけることはない。さらに、レジスト１０２を溶出して取り除くので、光検出部２Ａからレジスト１０２を除去する際、光検出部２Ａを傷つけることはない。   According to the manufacturing method of the semiconductor device 9 according to the second embodiment described above, the photodetecting portions 2A can be made of resin easily and in large quantities at a time, similarly to the manufacturing method of the photodetecting semiconductor device 1 of the first embodiment. The photodetection semiconductor device 9 which is not covered can be manufactured. Further, since the light detection portion 2A of the light detection semiconductor element 2 is protected by the resist 102 during manufacture, the light detection portion 2A is not damaged. Furthermore, since the resist 102 is eluted and removed, the photodetecting portion 2A is not damaged when the resist 102 is removed from the photodetecting portion 2A.

以上の実施形態の光検出半導体装置１，９を次のように変形することができる。
（１）樹脂封止工程で、樹脂６の光検出部２Ａへの流入を防ぐ樹脂流入防止部材であればアンダーフィル３４に限定されない。たとえば、アンダーフィル３４の代わりにＡＣＰ（異方性導電ペースト）またはＡＣＦ（異方性導電フィルム）を使用してもよい。この場合も、額縁形状にＡＣＰを塗布したり、額縁形状のＡＣＦを貼り付けたりすることによって、樹脂６の光検出部２Ａへの浸入を防止することができる。この場合の光検出半導体素子２の外部電極３への接合は、超音波振動の代りに加熱しながら半導体素子２を押圧することにより行う。 The photodetection semiconductor devices 1 and 9 of the above embodiment can be modified as follows.
(1) In the resin sealing step, the underfill 34 is not limited as long as it is a resin inflow prevention member that prevents the resin 6 from flowing into the light detection unit 2A. For example, instead of the underfill 34, ACP (anisotropic conductive paste) or ACF (anisotropic conductive film) may be used. Also in this case, it is possible to prevent the resin 6 from entering the photodetecting portion 2A by applying ACP to the frame shape or attaching the frame-shaped ACF. In this case, the light detection semiconductor element 2 is joined to the external electrode 3 by pressing the semiconductor element 2 while heating instead of ultrasonic vibration.

（２）額縁形状の電極１０１内にレジスト１０２を塗布する代わりに、フィルム状のレジストを貼り付けてもよい。フィルム状のレジストの場合は、流動して広がることがないので、額縁形状の電極１０１が不要になる。 (2) Instead of applying the resist 102 in the frame-shaped electrode 101, a film-like resist may be attached. In the case of a film-like resist, since it does not flow and spread, the frame-shaped electrode 101 becomes unnecessary.

（３）樹脂封止工程で、樹脂６の光検出部２Ａへの流入を防ぎ、そして、溶出して除去することが可能な樹脂流入防止部材であれば、レジスト３２に限定されない。 (3) In the resin sealing step, the resin 6 is not limited to the resist 32 as long as it is a resin inflow prevention member that can prevent the resin 6 from flowing into the light detection unit 2A and can be eluted and removed.

（４）光を検出するデバイスであれば、レーザ光を検出する光検出半導体装置１，９に限定されない。たとえば、ＣＣＤ（電化結合素子）にも適用できる。この場合、ＣＣＤ受光部が光検出部２Ａに相当する。また、ＣＭＯＳ（相補型金属酸化物半導体）イメージセンサにも適用してもよい。 (4) The device is not limited to the light detection semiconductor devices 1 and 9 that detect laser light as long as the device detects light. For example, the present invention can also be applied to a CCD (electric coupling element). In this case, the CCD light receiving unit corresponds to the light detection unit 2A. The present invention may also be applied to a CMOS (complementary metal oxide semiconductor) image sensor.

（５）外部電極３は、主に電鋳によるＮｉ層２１によって構成されたが、導電性を有する金属であればＮｉに限定されない。たとえば、電鋳によるＣｕ層で構成してもよい。 (5) The external electrode 3 is mainly composed of the Ni layer 21 formed by electroforming. However, the external electrode 3 is not limited to Ni as long as it is a conductive metal. For example, you may comprise with the Cu layer by electroforming.

（６）外部電極３と半田を接続するためにＡｕ層２５を設けたが、半田と接続するための金属層であれば、Ａｕ層２５に限定されない。たとえば、Ｓｎ層、Ｓｎ−Ｐｂ層、Ｓｎ−Ａｇ層、Ｓｎ−Ｃｕ層、Ｓｎ−Ｂｉ層などを形成してもよい。 (6) Although the Au layer 25 is provided to connect the external electrode 3 and the solder, the Au layer 25 is not limited to the Au layer 25 as long as it is a metal layer for connecting to the solder. For example, a Sn layer, a Sn—Pb layer, a Sn—Ag layer, a Sn—Cu layer, a Sn—Bi layer, or the like may be formed.

（７）金属層３３などを形成する基板は、可撓性を有する平板状の可撓性基板であれば、金属板３１に限定されない。たとえば、導電性樹脂基板を使用してもよい。また、無電解めっきを使用して外部電極３を形成する場合は、金属板３１のように導電性基板である必要はなく、非導電性基板でもよい。 (7) The substrate on which the metal layer 33 and the like are formed is not limited to the metal plate 31 as long as it is a flexible plate-like flexible substrate. For example, a conductive resin substrate may be used. Moreover, when forming the external electrode 3 using electroless plating, it does not need to be an electroconductive board | substrate like the metal plate 31, and a nonelectroconductive board | substrate may be sufficient.

（８）樹脂封止体６を分割する前に光検出部２Ａを覆っているレジスト１０２を溶出したが、分割後にレジスト１０２を溶出するようにしてもよい。 (8) Although the resist 102 covering the light detection unit 2A is eluted before the resin sealing body 6 is divided, the resist 102 may be eluted after the division.

本発明は、その特徴的構成を有していれば、以上説明した実施の形態になんら限定されない。   The present invention is not limited to the embodiment described above as long as it has the characteristic configuration.

図１（ａ）は第１の実施形態の光検出半導体装置の裏面図であり、図１（ｂ）は図１（ａ）のＡ−Ａ’線断面図である。FIG. 1A is a back view of the photodetection semiconductor device according to the first embodiment, and FIG. 1B is a cross-sectional view taken along line A-A ′ of FIG. 外部電極の構造を説明するための図である。It is a figure for demonstrating the structure of an external electrode. 第１の実施形態の光検出半導体装置の製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of the photon detection semiconductor device of 1st Embodiment. アンダーフィル塗布工程を説明するための図である。It is a figure for demonstrating an underfill application | coating process. 光検出半導体素子の接合を説明するための図である。It is a figure for demonstrating joining of a photon detection semiconductor element. 第１の実施形態の光検出半導体装置の製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of the photon detection semiconductor device of 1st Embodiment. 樹脂封止工程を説明するための図である。It is a figure for demonstrating the resin sealing process. 回路基板に実装した第１の実施形態の光検出半導体装置を説明するための図である。It is a figure for demonstrating the photon detection semiconductor device of 1st Embodiment mounted in the circuit board. 図９（ａ）は第２の実施形態の半導体装置の裏面図であり、図９（ｂ）は図９（ａ）のＢ−Ｂ’線断面図である。FIG. 9A is a rear view of the semiconductor device according to the second embodiment, and FIG. 9B is a cross-sectional view taken along line B-B ′ of FIG. 第２の実施形態の半導体装置の製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of the semiconductor device of 2nd Embodiment. 第２の実施形態の半導体装置の製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of the semiconductor device of 2nd Embodiment.

符号の説明Explanation of symbols

１，９ 光検出半導体装置
１Ａ 受光開口
２ 光検出半導体素子
２Ａ 光検出部
３ 外部電極
４，３４ アンダーフィル
５ バンプ
６ 樹脂
１０，３２，１０２ レジスト
１１ 金属部
２１ Ｎｉ層
２２，２４ Ｐｄ層
２３，２５ Ａｕ層
３１ 金属板
３３ 外部電極用金属層
４１ ノズル
５１ ボンディングツール
６０，１１０ 樹脂封止体
７１ 金型
８１ 回路基板
８２ 半田
１０１ 金属層
DESCRIPTION OF SYMBOLS 1,9 Photodetection semiconductor device 1A Photodetection opening 2 Photodetection semiconductor element 2A Photodetection part 3 External electrode 4,34 Underfill 5 Bump 6 Resin 10,32,102 Resist 11 Metal part 21 Ni layer 22, 24 Pd layer 23, 25 Au layer 31 Metal plate 33 External electrode metal layer 41 Nozzle 51 Bonding tool 60, 110 Resin sealing body 71 Mold 81 Circuit board 82 Solder 101 Metal layer

Claims (4)

電鋳による外部電極が設けられた可撓性基板上に、光検出部の受光面が前記可撓性基板に対向するように光検出半導体素子を搭載し、
前記可撓性基板と前記光検出部の受光面との間の空間を樹脂流入防止部材で密閉し、
その後、前記光検出半導体素子を前記可撓性基板上で樹脂封止することにより、前記可撓性基板上に複数の前記光検出半導体素子がマトリクス状に配設された樹脂封止体を作製し、
前記可撓性基板を前記樹脂封止体から剥離し、個片化することを特徴とする光検出半導体装置の製造方法。 A photodetecting semiconductor element is mounted on a flexible substrate provided with external electrodes by electroforming so that the light receiving surface of the photodetecting portion faces the flexible substrate,
The space between the flexible substrate and the light receiving surface of the light detection unit is sealed with a resin inflow prevention member,
Thereafter, the photodetection semiconductor element is resin-sealed on the flexible substrate, thereby producing a resin-sealed body in which a plurality of the photodetection semiconductor elements are arranged in a matrix on the flexible substrate. And
A method of manufacturing a photodetection semiconductor device, wherein the flexible substrate is separated from the resin sealing body and separated into individual pieces. 請求項１に記載の光検出半導体装置の製造方法において、
前記樹脂流入防止部材はアンダーフィル、異方性導電フィルムおよび異方性導電ペーストのいずれかであることを特徴とする光検出半導体装置の製造方法。 In the manufacturing method of the photodetection semiconductor device according to claim 1,
The method for manufacturing a photodetection semiconductor device, wherein the resin inflow prevention member is any one of an underfill, an anisotropic conductive film, and an anisotropic conductive paste. 電鋳による外部電極が設けられた可撓性基板上に、光検出部の受光面が前記可撓性基板に対向するように光検出半導体素子を搭載し、
前記可撓性基板と前記光検出部の受光面との間の空間を樹脂流入防止材料で充填し、
その後、前記光検出半導体素子を前記可撓性基板上で樹脂封止することにより、前記可撓性基板上に複数の前記光検出半導体素子がマトリクス状に配設された樹脂封止体を作製し、
前記可撓性基板を前記樹脂封止体から剥離した後、前記樹脂流入防止材料を溶出し、そして個片化すること、または、個片化し、そして前記樹脂流入防止材料を溶出することを特徴とする光検出半導体装置の製造方法。 A photodetecting semiconductor element is mounted on a flexible substrate provided with external electrodes by electroforming so that the light receiving surface of the photodetecting portion faces the flexible substrate,
Filling the space between the flexible substrate and the light receiving surface of the light detection unit with a resin inflow prevention material,
Thereafter, the photodetection semiconductor element is resin-sealed on the flexible substrate, thereby producing a resin-sealed body in which a plurality of the photodetection semiconductor elements are arranged in a matrix on the flexible substrate. And
After the flexible substrate is peeled from the resin sealing body, the resin inflow prevention material is eluted and separated into pieces, or separated into pieces and the resin inflow prevention material is eluted. A method for manufacturing a photodetection semiconductor device. 請求項３に記載の光検出半導体装置の製造方法において、
前記樹脂流入防止材料はレジストであることを特徴とする光検出半導体装置の製造方法。
In the manufacturing method of the photodetection semiconductor device according to claim 3,
The method for manufacturing a photodetection semiconductor device, wherein the resin inflow prevention material is a resist.
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