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JP4372241B2 - Method for manufacturing solid-state imaging device - Google Patents

Method for manufacturing solid-state imaging device Download PDF

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Publication number
JP4372241B2
JP4372241B2 JP22181298A JP22181298A JP4372241B2 JP 4372241 B2 JP4372241 B2 JP 4372241B2 JP 22181298 A JP22181298 A JP 22181298A JP 22181298 A JP22181298 A JP 22181298A JP 4372241 B2 JP4372241 B2 JP 4372241B2
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JP
Japan
Prior art keywords
solid
imaging device
state imaging
conductive adhesive
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP22181298A
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Japanese (ja)
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JP2000058805A (en
Inventor
文一 原園
孝尚 鈴木
喜雄 安達
定志 笹木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to JP22181298A priority Critical patent/JP4372241B2/en
Publication of JP2000058805A publication Critical patent/JP2000058805A/en
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Publication of JP4372241B2 publication Critical patent/JP4372241B2/en
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    • H10W70/682

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、CCDやCMOSその他の固体撮像素子(ベアチップ)を用いた固体撮像装置の製造方法に関するものである。
【0002】
【従来の技術】
従来、例えばビデオカメラを小型軽量化するために、固体撮像素子を、パッケージを用いずに裸のまま、直接プリント配線板に実装するものが知られている。
【0003】
図10は、従来のこの種の固体撮像装置の要部を、また、図11は、その製造方法をそれぞれ示したものである。なお、図10(b)は図10(a)の円で表示した部分の拡大図である。図10において、1はCCD等の固体撮像素子、2は固体撮像素子1の受光面3と同一面に設けた電極パッド4に形成された突起電極、5は例えば樹脂成形パッケージからなる絶縁基体、6は絶縁基体5の開口部5aの近傍に設けられた接続電極部で、配線導体16につながっている。7は固体撮像素子1の突起電極2と絶縁基体5の接続電極部6とを電気的に接続する導電性接着剤、8は固体撮像素子1の受光面3を外部から遮断して保護するためのシール剤である。なお、絶縁基体5の裏面側の、開口部5aを通して固体撮像素子1の受光面3が対向する部分には、図示しない撮像光学系が装着される。
【0004】
この固体撮像装置の製造方法は、図11(a)に示したように、別途製造された固体撮像素子1の受光面3側は保護膜9で覆われており、まず、その保護膜9を剥離する。次に、図11(b)に示したように、固体撮像素子1の電極パッド4に突起電極(バンプ)2を形成する。さらに、図11(c)に示したように、平坦なプレート10上に均一かつ所定の厚みに形成された導電性接着剤膜11に、固体撮像素子1の突起電極2を接触させて、突起電極2にそれぞれ所定量の導電性接着剤7を付着させる。次いで、図11(d)に示したように、固体撮像素子1の突起電極2を絶縁基体5の接続電極部6に位置合わせし、図11(e)のように当接させる。その後、導電性接着剤7を加熱硬化させて突起電極2と接続電極部6とを電気的に接続する。最後に、図11(f)に示したように、固体撮像素子1の周囲の絶縁基体5との隙間にシール剤8を充填し、加熱硬化させる。
【0005】
【発明が解決しようとする課題】
しかしながら、上記従来技術における固体撮像装置では、製造工程において、固体撮像素子1の保護膜9を剥離した後、電極パッド4に突起電極2を形成する際など、受光面3を上向きにして作業をしなければならず、そのため、受光面3にゴミ等が付着して特性劣化の原因になるという問題があった。
【0006】
本発明は、上記問題点を解決しようとするもので、固体撮像素子の受光面を被覆する保護膜を、受光面を下向きにして剥離し、そのまま絶縁基体に装着するようにした固体撮像装置の製造方法を提供することを目的とする。
【0007】
【課題を解決するための手段】
上記目的を達成するために、本発明の固体撮像装置の製造方法は、開口部を有する絶縁基体の前記開口部近傍に配した接続電極部に突起電極を形成する工程と、前記突起電極上に導電性接着剤を転写する工程と、固体撮像素子の受光面に設けられた保護膜を前記受光面を下向きにしたまま剥離する工程と、前記固体撮像素子の電極パッドを前記絶縁基体の突起電極に位置合わせし、前記電極パッドと突起電極とを前記導電性接着剤により接着して電気的接を行う工程とからなることを特徴とするものである。
【0009】
突起電極上に導電性接着剤を転写する工程は、平坦なプレート上に均一かつ所定の厚みに形成された導電性接着剤膜に、絶縁基体上の突起電極に対応する突起部を有する転写ツールを接触させて前記突起部にそれぞれ所定量の導電性接着剤を付着させ、次に、前記突起部に付着された導電性接着剤を前記絶縁基体上の突起電極に転写する。
【0010】
上記本発明の製造方法によれば、固体撮像素子を下向きにしたまま保護膜を剥離し、そのまま絶縁基体に装着することができるので、露出された受光面が上向きになる工程はなく、したがって、受光面へのゴミの付着を少なくし、特性劣化を防止することができる。
【0011】
【発明の実施の形態】
以下、本発明の実施の形態について図面を参照しながら詳細に説明する。
(実施の形態1)
図1は、本発明の実施の形態1における固体撮像装置を示したものである。なお、図1(b)は図1(a)の円で示した部分の拡大図である。また、図10の従来例と同一構成要素には同一符号を付している(以下同様)。すなわち、図1において、1はCCD等の固体撮像素子、2は突起電極、3は固体撮像素子1の受光面、4は受光面3と同一面に形成された電極パッドである。15は配線導体16および開口部15aを有するプリント配線板、6は開口部15aの近傍に配した接続電極部、7は導電性接着剤、8は固体撮像素子1の受光面3を外部から遮断して保護するためのシール剤である。なお、プリント配線板15の裏面側の、開口部15aを通して固体撮像素子1の受光面3が対向する部分には、図示しない撮像光学系が装着される。
【0012】
図10の従来例では、突起電極2は固体撮像素子1の電極パッド4に形成されていたが、本実施の形態1では、突起電極2がプリント配線板15の接続電極部6上に形成されている点が異なる。そして、突起電極2と固体撮像素子1の電極パッド4とが導電性接着剤7により電気的に接続されている。
【0013】
(実施の形態2)
図2は、本発明の実施の形態2における固体撮像装置を示したものである。なお、図2(b)は図2(a)の円で示した部分の拡大図である。本実施の形態2においては、実施の形態1のプリント配線板15に代えて樹脂成形パッケージ5を用いたものである。
【0014】
次に、本実施の形態2における固体撮像装置の製造方法について、図3を用いて説明する。まず、図3(a)に示したように、開口部5aを有する樹脂成形パッケージ5の開口部5a近傍に配した接続電極部6に突起電極2を形成する。16は接続電極部6につながる配線導体である。次に、図3(b)に示したように、突起電極2上に導電性接着剤7を転写する。導電性接着剤7の転写方法は、後で説明する。
【0015】
次いで、図3(c)に示したように、固体撮像素子1の受光面3に設けられた保護膜9を、受光面3を下向きにしたまま剥離する。さらに、図3(d)に示したように、固体撮像素子1の電極パッド4を樹脂成形パッケージ5の突起電極2に位置合わせし、図3(e)に示したように、電極パッド4と突起電極2とを導電性接着剤7により接着して、加熱硬化し、電気的接続を行う。最後に、ここでは図示していないが、固体撮像素子1の周囲の樹脂成形パッケージ5との隙間にシール剤8を充填し、加熱硬化する。
【0016】
図4は、樹脂成形パッケージ5の接続電極部6上に形成した突起電極2に導電性接着剤7を転写する工程を示したものである。まず、樹脂成形パッケージ5の突起電極2に対応する突起部18を有する転写ツール19を用意する。そこで、図4(a)〜図4(c)に示したように、平坦なプレート10上に均一かつ所定の厚みに形成された導電性接着剤膜11に、転写ツール19の突起部18を接触させ、その突起部18にそれぞれ所定量の導電性接着剤7を付着させる。
【0017】
次に、図4(d)〜図4(f)に示したように、樹脂成形パッケージ5に対して転写ツール19を上下させ、突起部18に付着した導電性接着剤7を樹脂成形パッケージ5の突起電極2に転写する。
【0018】
図5ないし図9は、それぞれ転写ツール19の突起部18の形状例を示したものである。なお、図5〜図9の各(a)は、突起部18の大きさを突起電極2の大きさと対比した図であり、(b)は突起部18に対する導電性接着剤7の付着状態を示したものである。
【0019】
図5における転写ツール19の突起部18aは、樹脂成形パッケージ5上の突起電極2の径Bと同一径またはそれ以上の径Aを有するものである。図6における突起部18bは、突起電極2の径と同一径またはそれ以上の径の第1の面と突起電極2の径より小さい径の第2の面の2段の面を有するものである。図7における突起部18cは、円錐台または角錐台の形状を有する。図8における突起部18dは、半球状の凹部を有するものである。図9における突起部18eは、箱型の凹部を有するものである。このように種々の形状の突起部を使用することができる。
【0020】
以上のように構成された前記実施の形態1あるいは実施の形態2の固体撮像装置、あるいはその製造方法によれば、固体撮像素子1を下向きにしたまま保護膜9を剥離し、そのままプリント配線板15や樹脂成形パッケージ5に装着することができるので、露出された受光面3が上向きになる工程はなく、したがって、受光面3へのゴミの付着が少なくなり、特性劣化を防止することができる。
【0021】
なお、導電性接着剤として、固体撮像素子の電極パッド表面に生成された酸化被膜を除去する、例えばハロゲン等の活性剤を含んでいるものを使用すれば、電極パッドに対する導電性接着剤中の導電粒子の接触性が良好になる。
【0022】
【発明の効果】
以上説明したように、本発明によれば、CCD等の固体撮像素子のベアチップを絶縁基体上にフェイスダウン接続して構成する固体撮像装置において、固体撮像素子を下向きにしたまま保護膜を剥離して、そのまま絶縁基体に装着することができるので、露出された受光面へのゴミの付着が少なくなり、特性劣化を防止することができる効果がある。
【図面の簡単な説明】
【図1】本発明の実施の形態1における固体撮像装置の断面図
【図2】本発明の実施の形態2における固体撮像装置の断面図
【図3】本発明の実施の形態2における固体撮像装置の製造工程断面図
【図4】本発明の実施の形態2の製造工程における突起電極に導電性接着剤を転写する工程断面図
【図5】導電性接着剤の転写ツールにおける突起部の第1の形状例を示す図
【図6】導電性接着剤の転写ツールにおける突起部の第2の形状例を示す図
【図7】導電性接着剤の転写ツールにおける突起部の第3の形状例を示す図
【図8】導電性接着剤の転写ツールにおける突起部の第4の形状例を示す図
【図9】導電性接着剤の転写ツールにおける突起部の第5の形状例を示す図
【図10】従来例の固体撮像装置の断面図
【図11】従来例の固体撮像装置の製造工程断面図
【符号の説明】
1 固体撮像素子
2 突起電極
3 受光面
4 電極パッド
5 樹脂成形パッケージ
5a 開口部
6 接続電極部
7 導電性接着剤
8 シール剤
9 保護膜
10 プレート
11 導電性接着剤膜
15 プリント配線板
15a 開口部
16 配線導体
18 突起部
19 転写ツール
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a manufacturing method of a solid-state imaging equipment using a CCD or CMOS other solid-state imaging device (bare chip).
[0002]
[Prior art]
2. Description of the Related Art Conventionally, for example, in order to reduce the size and weight of a video camera, it is known that a solid-state imaging device is directly mounted on a printed wiring board without using a package.
[0003]
FIG. 10 shows the main part of this type of conventional solid-state imaging device, and FIG. 11 shows the manufacturing method thereof. In addition, FIG.10 (b) is an enlarged view of the part displayed with the circle | round | yen of Fig.10 (a). In FIG. 10, 1 is a solid-state imaging device such as a CCD, 2 is a protruding electrode formed on an electrode pad 4 provided on the same surface as the light receiving surface 3 of the solid-state imaging device 1, and 5 is an insulating substrate made of, for example, a resin molded package, Reference numeral 6 denotes a connection electrode portion provided in the vicinity of the opening 5 a of the insulating base 5 and is connected to the wiring conductor 16. 7 is a conductive adhesive for electrically connecting the protruding electrode 2 of the solid-state image pickup device 1 and the connection electrode portion 6 of the insulating substrate 5, and 8 is for protecting the light-receiving surface 3 of the solid-state image pickup device 1 from outside. It is a sealant. Note that an imaging optical system (not shown) is mounted on a portion of the back surface side of the insulating base 5 facing the light receiving surface 3 of the solid-state imaging device 1 through the opening 5a.
[0004]
In the method for manufacturing the solid-state imaging device, as shown in FIG. 11A, the light-receiving surface 3 side of the separately manufactured solid-state imaging device 1 is covered with a protective film 9. Peel off. Next, as shown in FIG. 11B, the protruding electrodes (bumps) 2 are formed on the electrode pads 4 of the solid-state imaging device 1. Further, as shown in FIG. 11C, the protruding electrode 2 of the solid-state imaging device 1 is brought into contact with the conductive adhesive film 11 formed uniformly and with a predetermined thickness on the flat plate 10 so that the protrusion A predetermined amount of conductive adhesive 7 is attached to each electrode 2. Next, as shown in FIG. 11 (d), the protruding electrode 2 of the solid-state imaging device 1 is aligned with the connection electrode portion 6 of the insulating base 5 and brought into contact as shown in FIG. 11 (e). Thereafter, the conductive adhesive 7 is cured by heating to electrically connect the protruding electrode 2 and the connection electrode portion 6. Finally, as shown in FIG. 11 (f), the sealant 8 is filled in the gap between the solid-state imaging device 1 and the insulating base 5 around the solid-state imaging device 1, and is cured by heating.
[0005]
[Problems to be solved by the invention]
However, in the above-described conventional solid-state imaging device, in the manufacturing process, after the protective film 9 of the solid-state imaging device 1 is peeled off, the work is performed with the light-receiving surface 3 facing upward, such as when the protruding electrode 2 is formed on the electrode pad 4. Therefore, there is a problem in that dust or the like adheres to the light receiving surface 3 and causes deterioration of characteristics.
[0006]
The present invention seeks to solve the above problems, the protective film covering the light receiving surface of the solid-state imaging device, and peeling in the downward light receiving surface, the solid-state imaging equipment which is adapted for mounting directly to the insulating substrate It aims at providing the manufacturing method of.
[0007]
[Means for Solving the Problems]
To achieve the above object, a method for manufacturing a solid-state imaging device of the present invention includes the steps of: forming a protruding electrode on the connection electrode section provided in the vicinity of the opening portion of the insulating substrate to have a opening, the protruding electrode on A step of transferring the conductive adhesive to the substrate, a step of peeling the protective film provided on the light receiving surface of the solid-state image sensing device with the light receiving surface facing downward, and an electrode pad of the solid-state image sensing device as a protrusion of the insulating substrate aligned with the electrodes, and is characterized in that comprising the step of performing electrical connection with said electrode pad and the bump electrode are bonded with the conductive adhesive.
[0009]
The step of transferring the conductive adhesive onto the protruding electrode is a transfer tool having a protruding portion corresponding to the protruding electrode on the insulating substrate on the conductive adhesive film formed uniformly and with a predetermined thickness on the flat plate. Then, a predetermined amount of conductive adhesive is attached to each of the protrusions, and then the conductive adhesive attached to the protrusions is transferred to the protrusion electrodes on the insulating substrate.
[0010]
According to manufacturing method of the present invention, the solid-state imaging device is peeled off while the protective film was downward, since it can be mounted on the insulating substrate, no step of exposing light-receiving surfaces facing upward, thus Therefore, it is possible to reduce the adhesion of dust to the light receiving surface and prevent characteristic deterioration.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 1 shows a solid-state imaging device according to Embodiment 1 of the present invention. FIG. 1B is an enlarged view of a portion indicated by a circle in FIG. The same components as those in the conventional example of FIG. 10 are denoted by the same reference numerals (the same applies hereinafter). That is, in FIG. 1, 1 is a solid-state imaging device such as a CCD, 2 is a protruding electrode, 3 is a light receiving surface of the solid-state imaging device 1, and 4 is an electrode pad formed on the same surface as the light receiving surface 3. Reference numeral 15 is a printed wiring board having a wiring conductor 16 and an opening 15a, 6 is a connection electrode portion disposed in the vicinity of the opening 15a, 7 is a conductive adhesive, and 8 is a shield for the light receiving surface 3 of the solid-state imaging device 1 from the outside. It is a sealing agent for protecting. Note that an imaging optical system (not shown) is mounted on a portion of the back surface side of the printed wiring board 15 facing the light receiving surface 3 of the solid-state imaging device 1 through the opening 15a.
[0012]
In the conventional example of FIG. 10, the protruding electrode 2 is formed on the electrode pad 4 of the solid-state imaging device 1. However, in the first embodiment, the protruding electrode 2 is formed on the connection electrode portion 6 of the printed wiring board 15. Is different. The protruding electrode 2 and the electrode pad 4 of the solid-state imaging device 1 are electrically connected by the conductive adhesive 7.
[0013]
(Embodiment 2)
FIG. 2 shows a solid-state imaging device according to Embodiment 2 of the present invention. FIG. 2B is an enlarged view of a portion indicated by a circle in FIG. In the second embodiment, a resin molded package 5 is used instead of the printed wiring board 15 of the first embodiment.
[0014]
Next, a method for manufacturing the solid-state imaging device according to the second embodiment will be described with reference to FIG. First, as shown in FIG. 3A, the protruding electrode 2 is formed on the connection electrode portion 6 disposed in the vicinity of the opening 5a of the resin molded package 5 having the opening 5a. Reference numeral 16 denotes a wiring conductor connected to the connection electrode portion 6. Next, as shown in FIG. 3B, the conductive adhesive 7 is transferred onto the protruding electrode 2. A method for transferring the conductive adhesive 7 will be described later.
[0015]
Next, as shown in FIG. 3C, the protective film 9 provided on the light receiving surface 3 of the solid-state imaging device 1 is peeled off with the light receiving surface 3 facing downward. Further, as shown in FIG. 3 (d), the electrode pad 4 of the solid-state imaging device 1 is aligned with the protruding electrode 2 of the resin molded package 5, and as shown in FIG. The protruding electrode 2 is bonded with the conductive adhesive 7 and cured by heating to make electrical connection. Finally, although not shown here, the sealant 8 is filled in the gap between the solid-state imaging device 1 and the resin molded package 5 and is cured by heating.
[0016]
FIG. 4 shows a process of transferring the conductive adhesive 7 to the protruding electrode 2 formed on the connection electrode portion 6 of the resin molded package 5. First, a transfer tool 19 having a protruding portion 18 corresponding to the protruding electrode 2 of the resin molded package 5 is prepared. Therefore, as shown in FIGS. 4A to 4C, the protrusion 18 of the transfer tool 19 is formed on the conductive adhesive film 11 formed uniformly and with a predetermined thickness on the flat plate 10. A predetermined amount of the conductive adhesive 7 is adhered to each of the protrusions 18.
[0017]
Next, as shown in FIG. 4D to FIG. 4F, the transfer tool 19 is moved up and down with respect to the resin molded package 5, and the conductive adhesive 7 attached to the protrusions 18 is applied to the resin molded package 5. Is transferred to the protruding electrode 2.
[0018]
FIGS. 5 to 9 show examples of the shape of the protrusion 18 of the transfer tool 19. 5A to 9A are diagrams in which the size of the protruding portion 18 is compared with the size of the protruding electrode 2, and FIG. 5B illustrates the state of the conductive adhesive 7 attached to the protruding portion 18. It is shown.
[0019]
The protrusion 18 a of the transfer tool 19 in FIG. 5 has a diameter A that is equal to or greater than the diameter B of the protruding electrode 2 on the resin molded package 5. 6 has two steps of a first surface having a diameter equal to or larger than the diameter of the protruding electrode 2 and a second surface having a diameter smaller than the diameter of the protruding electrode 2. . 7 has a truncated cone shape or a truncated pyramid shape. The protrusion 18d in FIG. 8 has a hemispherical recess. The protrusion 18e in FIG. 9 has a box-shaped recess. As described above, projections having various shapes can be used.
[0020]
According to the solid-state imaging device of Embodiment 1 or Embodiment 2 or the manufacturing method thereof configured as described above, the protective film 9 is peeled off with the solid-state imaging device 1 facing downward, and the printed wiring board is left as it is. 15 and the resin molded package 5, there is no process in which the exposed light-receiving surface 3 faces upward, and therefore, adhesion of dust to the light-receiving surface 3 is reduced and characteristic deterioration can be prevented. .
[0021]
If a conductive adhesive that removes an oxide film formed on the surface of the electrode pad of the solid-state imaging device, for example, containing an activator such as halogen, is used in the conductive adhesive for the electrode pad. The contact property of the conductive particles is improved.
[0022]
【The invention's effect】
As described above, according to the present invention, in a solid-state imaging device configured by face-down connection of a bare chip of a solid-state imaging device such as a CCD on an insulating substrate, the protective film is peeled off with the solid-state imaging device facing downward. Thus, since it can be mounted on the insulating substrate as it is, adhesion of dust to the exposed light receiving surface is reduced, and there is an effect that characteristic deterioration can be prevented.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a solid-state imaging device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view of a solid-state imaging device according to a second embodiment of the present invention. FIG. 4 is a cross-sectional view of a process for transferring a conductive adhesive to a protruding electrode in the manufacturing process of Embodiment 2 of the present invention. FIG. 5 is a cross-sectional view of a protrusion in a conductive adhesive transfer tool. FIG. 6 is a diagram showing a second shape example of the protrusion in the conductive adhesive transfer tool. FIG. 7 is a third shape example of the protrusion in the conductive adhesive transfer tool. FIG. 8 is a diagram showing a fourth shape example of the protrusion in the conductive adhesive transfer tool. FIG. 9 is a diagram showing a fifth shape example of the protrusion in the conductive adhesive transfer tool. 10 is a cross-sectional view of a conventional solid-state imaging device. FIG. 11 is a conventional solid-state imaging device. Manufacturing process sectional views of a device [Description of symbols]
DESCRIPTION OF SYMBOLS 1 Solid-state image pick-up element 2 Protruding electrode 3 Light-receiving surface 4 Electrode pad 5 Resin molding package 5a Opening part 6 Connection electrode part 7 Conductive adhesive 8 Sealing agent 9 Protective film 10 Plate 11 Conductive adhesive film 15 Printed wiring board 15a Opening part 16 Wiring conductor 18 Protrusion 19 Transfer tool

Claims (8)

開口部を有する絶縁基体の前記開口部近傍に配した接続電極部に突起電極を形成する工程と、前記突起電極上に導電性接着剤を転写する工程と、固体撮像素子の受光面を被覆する保護膜を前記受光面を下向きにしたまま剥離する工程と、前記固体撮像素子の受光面と同一面に設けられた電極パッドを前記絶縁基体の突起電極に位置合わせし、前記電極パッドと突起電極とを前記導電性接着剤により接着して電気的接続を行う工程とからなることを特徴とする固体撮像装置の製造方法 Coating and forming a protruding electrode on the connection electrode section provided in the vicinity of the opening portion of the insulating substrate to have a opening, a step of transferring the conductive adhesive onto the protruding electrode, the light-receiving surface of the solid-state imaging device Peeling the protective film with the light receiving surface facing downward, and aligning an electrode pad provided on the same surface as the light receiving surface of the solid-state imaging device with the protruding electrode of the insulating base, A method of manufacturing a solid-state imaging device , comprising the step of performing electrical connection by bonding an electrode to the conductive adhesive . 起電極上に導電性接着剤を転写する工程は、平坦なプレート上に均一かつ所定の厚みに形成された導電性接着剤膜に、絶縁基体上突起電極に対応する突起部を有する転写ツールを接触させて前記突起部にそれぞれ所定量の導電性接着剤を付着させ、次に、前記突起部に付着された導電性接着剤を前記絶縁基体上の突起電極に転写することを特徴とする請求項1記載の固体撮像装置の製造方法 Step of transferring the conductive adhesive on the collision force electrode, the conductive adhesive film formed uniformly and a predetermined thickness on a flat plate, transfer with a protrusion corresponding to the protruding electrode on an insulating substrate A predetermined amount of conductive adhesive is attached to each of the protrusions by contacting a tool, and then the conductive adhesive attached to the protrusions is transferred to the protrusion electrodes on the insulating substrate. A method for manufacturing a solid-state imaging device according to claim 1 . 転写ツールの突起部は、絶縁基体上の突起電極の径と同一径またはそれ以上の径を有することを特徴とする請求項2記載の固体撮像装置の製造方法。 3. The method of manufacturing a solid-state imaging device according to claim 2 , wherein the protruding portion of the transfer tool has a diameter equal to or larger than the diameter of the protruding electrode on the insulating substrate. 写ツール突起部は、絶縁基体上の突起電極の径と同一径またはそれ以上の径の第1の面と前記突起電極の径より小さい径の第2の面の2段の面を有することを特徴とする請求項記載の固体撮像装置の製造方法。Projections of transcription tool has a surface of two-stage of the second surface of smaller diameter than the diameter of the first surface and the protrusion electrode of diameter same diameter or more diameter and a protruding electrode on the insulating substrate The method of manufacturing a solid-state imaging device according to claim 2 . 転写ツールの突起部は、円錐台または角錐台の形状を有することを特徴とする請求項記載の固体撮像装置の製造方法。The method for manufacturing a solid-state imaging device according to claim 2 , wherein the protrusion of the transfer tool has a truncated cone shape or a truncated pyramid shape . 転写ツールの突起部は、半球状の凹部を有することを特徴とする請求項記載の固体撮像装置の製造方法。The method for manufacturing a solid-state imaging device according to claim 2 , wherein the protrusion of the transfer tool has a hemispherical recess . 転写ツールの突起部は、箱型の凹部を有することを特徴とする請求項記載の固体撮像装置の製造方法。The method for manufacturing a solid-state imaging device according to claim 2 , wherein the protrusion of the transfer tool has a box-shaped recess . 導電性接着剤は、固体撮像素子の電極パッド表面に生成された酸化被膜を除去する活性剤を含んでいることを特徴とする請求項1または2記載の固体撮像装置の製造方法。 3. The method of manufacturing a solid-state imaging device according to claim 1 , wherein the conductive adhesive contains an activator that removes an oxide film formed on the surface of the electrode pad of the solid-state imaging device.
JP22181298A 1998-08-05 1998-08-05 Method for manufacturing solid-state imaging device Expired - Fee Related JP4372241B2 (en)

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