JP4095211B2 - Exposure apparatus and device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an exposure apparatus and a device manufacturing method for manufacturing devices such as semiconductor elements and liquid crystal display elements by a photolithography process.
[0002]
[Prior art]
In recent years, along with the miniaturization and high integration of semiconductor integrated circuits such as ICs and LSIs, exposure apparatuses for semiconductor manufacturing have also been improved in precision and functionality. Also in alignment (alignment) with the exposure substrate, overlay accuracy on the order of several tens of nanometers is required.
[0003]
As exposure apparatuses used for manufacturing such semiconductors, apparatuses called steppers and scanners are known. These apparatuses sequentially transfer a pattern formed on an original plate (reticle) to a plurality of locations on the substrate to be exposed while stepping the substrate to be exposed. A device that performs this transfer collectively is a stepper or a step-and-repeat device, and a device that performs transfer while scanning a stage is called a scanner or a step-and-scan device. The difference between the two is the form at the time of exposure, and the basic operation (step-and-repeat) of repeating the steps repeatedly is the same for both.
[0004]
In recent years, patterns of semiconductor integrated circuits and the like are becoming increasingly dense and fine, and further improvement in alignment accuracy is required. In particular, when a reticle having a low exposure light transmittance is used, the temperature of the reticle rises due to heat accumulation due to exposure light absorption. The resulting reticle or reticle reference portion (a reticle reference substrate on which a reticle reference mark serving as a reference for aligning the reticle in the vicinity of the reticle is formed, and a substrate to which the reticle reference substrate is fixed by adhesion or the like The alignment accuracy decreases due to thermal deformation of both of the holding portions.
[0005]
Such a decrease in alignment accuracy due to thermal deformation of the reticle reference substrate and the like has been an allowable range amount in the conventional exposure apparatus, but has become an amount that cannot be ignored in recent high-precision exposure apparatuses.
[0006]
As one of the methods for solving the above problem, a method disclosed in JP-A-4-192317 will be described. First, the amount of thermal deformation of the reticle due to absorption of illumination light such as exposure light is obtained. The method of calculating the amount of thermal deformation of the reticle is based on the numerical calculation based on the type of light shielding material such as chrome used in the reticle and the heat absorption rate and pattern distribution. There is a way to ask. Alternatively, there is also a method for obtaining the amount of thermal deformation of the reticle by directly measuring the measurement mark position of the reticle. Next, a change in the imaging state by the projection optical system is predicted from the above result by optical calculation or formulation based on an actual example. Based on this result, the image forming state correction means such as lens driving is used to make the image forming state constant, or correction is performed to minimize the influence of fluctuations in the image forming state.
[0007]
In this way, by correcting the fluctuation of the imaging characteristics due to thermal deformation of the reticle with the means for correcting the imaging characteristics, the fluctuation of the imaging characteristics is canceled and a good imaging state is always maintained. It is configured.
[0008]
[Problems to be solved by the invention]
However, according to the above conventional technique, although various means have been developed to correct the thermal deformation of the reticle due to the illumination light, the reticle reference portion undergoes thermal deformation due to the radiant heat of the heated reticle. There is an unsolved problem that it is not possible to prevent a decrease in alignment accuracy.
[0009]
As described above, chromium or the like is used for the material of the non-transmission pattern surface of the reticle, and its transmittance is low and heat absorption is high compared to the glass portion of the reticle. Therefore, the temperature rise of the reticle when the worst condition of the chromium occupancy of the reticle being 100% is assumed reaches about 8 ° C.
[0010]
Further, when the wavelength of the exposure light is about 180 nm or less, the reticle material that transmits light of that wavelength is limited to meteorites and the like. This meteorite has a coefficient of thermal expansion that is an order of magnitude higher than that of quartz glass. Therefore, when a meteorite reticle is used, the amount of heat accumulated in the reticle due to exposure light exposure is much greater than that of quartz glass.
[0011]
Such an increase in the temperature of the reticle increases the amount of radiant heat from the reticle, leading to an increase in the temperature of the reticle reference section located directly under the reticle, and thermal deformation of the reticle reference section substrate (reticle reference substrate) and the substrate holding section. Causing the reticle alignment accuracy to deteriorate significantly.
[0012]
The present invention has been made in view of the above-mentioned unsolved problems of the prior art, and keeps the temperature of an original reference portion, which is a reference for alignment (alignment) of an original such as a reticle and a photomask, being constant. An object of the present invention is to provide an exposure apparatus and a device manufacturing method that can prevent deformation and improve the alignment accuracy of the original plate, and can greatly contribute to the high density and miniaturization of patterns.
[0013]
[Means for Solving the Problems]
In order to achieve the above object, an exposure apparatus of the present invention has stage means for holding an original having a pattern to be transferred to an exposed substrate, stage drive means for driving the stage means, and the original is placed. A reticle chuck, an internal pipe provided in the reticle chuck, an original plate reference portion having an original plate reference substrate having an original reference mark serving as a reference for alignment of the original plate, and an air flow for adjusting the temperature of the original plate reference portion The gas blown from the blower is an inert gas, and is blown onto the original reference part through the internal pipe.
[0014]
It may gas Ru blown between the original and the original reference portion.
[0015]
The gas may be a gas that does not contain any of an organosilicon compound, ammonia, sulfate ion, or organic gas.
[0016]
The gas may be an inert gas.
[0017]
Even if it is configured to adjust at least one of the flow rate, pressure, flow rate, and blowing direction of the gas based on at least one of the pattern area of the original plate, the integrated exposure energy amount, and the continuous exposure time. Good.
[0018]
At least one of the gas flow rate, pressure, flow rate, and blowing direction is adjusted based on a change in measurement position of at least one of the alignment mark of the original plate, the alignment mark of the substrate to be exposed, and the original reference mark. It may be configured.
[0019]
[Action]
Since the original reference part having an original reference mark serving as a reference for alignment of the original such as a reticle is in the vicinity of the original, the temperature is raised by the radiant heat of the original and the alignment accuracy of the original is lowered due to thermal deformation. Therefore, by adjusting the temperature of the original reference section by the gas body blown out from the blower to prevent the deterioration of the alignment accuracy due to temperature change of the original reference portion.
[0020]
By adjusting the temperature of the original plate reference portion, it is possible to greatly improve the overlay accuracy of an exposure apparatus that uses a reticle having a large chromium occupation area, a meteorite substrate reticle, or the like.
[0021]
Moreover, reducing the radiant heat from the original plate by blowing a gas between the original plate such as a reticle and the original plate reference portion has a great effect on preventing the temperature increase of the original plate reference portion.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described with reference to the drawings.
[0023]
FIG. 1A shows the entire exposure apparatus according to the first embodiment, which is an original plate having a light source 1 that generates illumination light such as exposure light and a pattern that is transferred to a wafer W that is an exposed substrate. A reticle stage 2 as stage means for mounting a reticle R, a projection optical system 3 for reducing and projecting the pattern of the reticle R onto the wafer W, and holding the wafer W, moving in the XY directions perpendicular to the optical axis of the illumination light The wafer W is held by a wafer chuck 4 a on the XY stage 4.
[0024]
The reticle stage 2 includes a reticle chuck 11 on which the reticle R is placed, a reticle driving unit 12 that is a stage driving unit, and a reticle reference unit 13 that is an original reference unit. As shown in FIG. 1B, the reticle reference portion 13 is an original reference mark serving as an alignment reference for aligning the reticle R by overlapping the alignment mark RM provided on the reticle R. A reticle reference substrate 13a having a reticle reference mark SM and a substrate holding portion 13b for fixing and holding the reticle reference substrate 13a are supported on the top of the base 5, which is the main body of the apparatus.
[0025]
A plurality of reticle reference portions 13 are provided inside the reticle chuck 11, and the amount of deviation between the plurality of alignment marks RM on the reticle R and the reticle reference mark SM is measured by the plurality of alignment optical systems 6, and the reticle is based on the measurement result. By driving the drive unit 12, the positional deviation of the reticle R with respect to the projection optical system 3 or the like is corrected.
[0026]
Note that the alignment mark RM of the reticle R, the reticle reference portion 13 including the reticle reference mark SM, and the alignment optical system 6 are all disposed outside the exposure area of the reticle R. As a result, the reticle R can be aligned during the exposure operation, and an improvement in throughput can be expected by shortening the exposure cycle time.
[0027]
The exposure procedure is performed as follows. First, the reticle R is fed into the exposure apparatus by a reticle feeding hand (not shown).
[0028]
Next, the amount of deviation between the reticle reference mark SM and the alignment mark RM of the reticle R is measured by the alignment optical system 6, and the reticle R is moved and positioned by the reticle driving unit 12 so as to be within a predetermined range. The method for positioning the reticle R is as follows.
[0029]
The reticle reference mark SM and the alignment mark RM of the reticle R are observed with a TTR (through-the-reticle) microscope of the alignment optical system 6 to detect a relative displacement between them. As described above, if a plurality of TTR microscopes are used, the rotation of the reticle R can be detected, and the alignment accuracy is improved. The alignment between the alignment mark RM of the reticle R and the reticle reference mark SM is performed as follows.
[0030]
The TTR microscope of each alignment optical system 6 includes a mechanism that can drive a mirror 6a and an objective lens 6b on a plane parallel to the reticle R as a set. For this reason, it is afocal between the objective lens 6b and the relay lens 6c. Prior to detection of the reticle reference mark SM and the alignment mark RM of the reticle R, the mirror 6a and the objective lens 6b are driven to a position for aligning the reticle R.
[0031]
The light beam from the light source 1 is guided to the TTR microscope through the light guide 6d, and a specific wavelength, that is, the same wavelength as the exposure light is selected by the wavelength selection filter 6e and guided to the TTR microscope. .
[0032]
A wavelength selective filter 6e allows a light beam having a predetermined wavelength width to pass through, collects it with a condenser lens 6f, and reflects it with a beam splitter 6g. Then, the light is reflected by the beam splitter 6g, and the alignment mark RM of the reticle R and the reticle reference mark SM are illuminated by a light beam that passes through the objective lens 6b and the mirror 6a.
[0033]
The alignment mark RM and the reticle reference mark SM on the reticle R are set to have an interval equal to or smaller than the focal depth of the objective lens 6b. Reflected light from the alignment mark RM of the reticle R and the reticle reference mark SM sequentially returns to the mirror 6a, the objective lens 6b, and the original optical path, passes through the beam splitter 6g, and enters the CCD camera 6h, both on the camera surface. The mark image is formed. Thus, when both the alignment mark RM of the reticle R and the reticle reference mark SM are placed in the observation area of the objective lens 6b, both can be observed simultaneously.
[0034]
The image signal photoelectrically converted by the CCD camera 6h is sent to an image processing device (not shown), and a relative deviation amount between the alignment mark RM of the reticle R and the reticle reference mark SM is calculated. Based on the information, the reticle stage 2 is driven to align the reticle R with the base 5 which is the exposure apparatus main body.
[0035]
In addition, by this measurement, not only the reticle magnification but also the reticle position and reticle rotation based on the reticle reference mark SM can be measured simultaneously. If the reticle reference mark position is calibrated with respect to the wafer stage coordinate system, the position of the reticle R with respect to the wafer coordinate system can be monitored at an arbitrary time. Although the reticle R is vacuum-sucked by the reticle chuck 11, not only the reticle magnification but also the movement such as parallel shift and rotation are affected by the vibration and temperature change caused by the driving of the XY stage 4 on which the wafer W is mounted. There is also a case where it ends. Accordingly, if the position and rotation values are reflected in the alignment correction amount, more accurate alignment is possible.
[0036]
Next, the wafer W is attracted to the wafer chuck 4a by the wafer transfer system. The XY stage 4 sequentially exposes a plurality of locations on the wafer W while repeating the step-and-repeat exposure operation. When the exposure process for the entire wafer W is completed, the wafer W is unloaded by the wafer transfer system.
[0037]
In the above exposure cycle, when the reticle R absorbs the exposure light and rises in temperature, and the reticle reference substrate 13a of the reticle reference portion 13 of the reticle stage 2 is heated by the radiant heat from the reticle R, the thermal deformation causes The reticle reference mark SM is displaced. In view of this, a pair of air blowers 14 are provided as original plate reference portion temperature adjusting means for blowing a gas that is a temperature adjusting medium for controlling the temperature of the reticle reference portion 13.
[0038]
Each blower 14 has two blower pipes 14a that are installed in the vicinity of the substrate holding part 13b of the reticle reference part 13 and generate an air flow having directivity toward the substrate holding part 13b, and thereby the reticle reference part. Thus, the temperature of the reticle reference unit 13 can be efficiently controlled without affecting the projection optical system 3 below the projection optical system 3.
[0039]
The gas outlet of the blower 14 is not limited to two systems, and may be one system or may have two or more systems. Each system is accompanied by an air volume adjusting mechanism 14b.
[0040]
The material of the blower 14 in the vicinity of the reticle reference portion 13 is preferably processed with a fluororesin or stainless steel that does not contain a substance that causes the fogging of the alignment optical system 6. Further, in an exposure apparatus using an exposure light source with a short exposure wavelength such as an ArF laser, ozone is generated along with the oscillation of the laser. Therefore, the material used for the blower 14 is a fluororesin from the viewpoint of deterioration due to ozone. Alternatively, a stainless steel material is desirable. Further, it is desirable that a part of the air duct 14a is made of a flexible material so that vibration of the pipe is not transmitted.
[0041]
The gas to be blown is preferably an inert gas from the viewpoint of preventing contamination of the optical component. In the case where the reticle reference portion is disposed inside the main body, or in a projection exposure apparatus that uses illumination light having an exposure wavelength for exposing a resist photosensitive film such as ultraviolet pulse light (for example, Krf excimer laser). An inert gas may be used as the gas blown to the reticle reference portion.
[0042]
Next, a method for adjusting the temperature of the reticle reference unit 13 by the blower 14 will be described. The air blower 14 blows air to the reticle reference portion 13 to prevent the reticle reference substrate 13a from being deformed or displaced by the radiation reference portion 13 absorbing the radiant heat from the reticle R, and the temperature of the reticle reference portion 13. Prevents change. Further, the atmosphere of the reticle reference portion 13 is diffused by blowing the gas to the reticle reference portion 13, so that heat can be reduced. There are the following three methods for adjusting the temperature.
[0043]
In the first temperature adjustment method, since the radiant heat from the reticle differs depending on the exposure condition and the type of reticle, the air conditioning condition is set based on the exposure condition and the type of reticle. For example, the air conditioning conditions are set based on the accumulated exposure energy amount, the continuous exposure time, the reticle occupation ratio (pattern area) of the non-transparent pattern surface of the reticle, the arrangement of the non-transparent pattern surface of the reticle, and the like.
[0044]
Specifically, for example, when the reticle occupancy ratio of the non-transmission pattern surface of the reticle is known, an optimal air blowing condition is set by the operator of the apparatus based on the occupancy ratio, and the air is blown to the reticle reference portion.
[0045]
That is, when a reticle having a low reticle occupancy ratio on the non-transparent pattern surface of the reticle is used, the gas to be blown to the reticle reference portion is in a state where a small amount of air is blown or stopped, and a reticle having a high reticle occupancy ratio on the non-transmission pattern surface of the reticle. Only when the device is used, settings can be made for each device manufacturing process, such as blowing air to the reticle reference portion.
[0046]
It is also possible to adopt a configuration in which the reticle occupancy of the non-transparent pattern of the reticle is measured by a method such as image processing and the air flow is automatically adjusted without setting the optimum air flow by the operator. .
[0047]
Depending on the arrangement of the non-transmissive pattern of the reticle, it is necessary to change the blowing position. In this case, a blower system is selected and a blower tube at an optimum blower position is used.
[0048]
Similar settings can be made under other conditions, and it is even more effective if a plurality of conditions are set together.
[0049]
In the second temperature adjustment method, the amount of gas blown to the reticle reference portion, the position of the reticle reference mark, one or more alignment mark positions on the reticle, one or more on the wafer that is the substrate to be exposed, The alignment mark position or the like is measured and adjusted by the variation amount of the measurement position or the relative variation amount of two or more mark positions. For example, when the mark position fluctuation amount is small, the gas blown to the reticle reference portion is set in a state where a small amount of air is blown or stopped, and only when the mark position fluctuation amount is high, the gas is blown to the reticle reference portion. .
[0050]
It is also beneficial to pattern the mark position variation and automatically adjust the air flow rate by numerical calculation. To briefly explain an example, a deformation model around the reticle corresponding to the variation in the mark position is created in advance. Then, the mark position variation is measured, a deformation model close to the measurement result is selected, and the air blowing condition corresponding to the selected deformation model is determined. Note that the measurement may be performed at all times and the air flow rate may be adjusted as appropriate, or the measurement may be performed in a spot manner to adjust the air blowing conditions.
[0051]
Or you may employ | adopt the 3rd temperature control method described below. It has been found that the thermal deformation behavior around the reticle fluctuates rapidly immediately after the start of exposure. Therefore, if the reticle reference portion is preheated before the start of exposure, the amount of fluctuation can be reduced, and the time required to reach a temperature stable state can also be shortened. That is, in the same manner as in the first method, the thermal fluctuation generated by the exposure condition and the type of reticle is estimated, and the reticle reference part is sprayed on the reticle reference part with a temperature-controlled gas from the blower so as to reduce the thermal fluctuation. Heat up.
[0052]
According to the present embodiment, as described above, in order to prevent the temperature rise of the reticle reference portion due to the radiant heat of the reticle, the reticle reference portion is cooled by blowing the temperature adjustment medium, or the reticle reference portion is previously cooled by the temperature adjustment medium. By raising the temperature, it is possible to prevent a decrease in alignment accuracy due to thermal deformation of the reticle reference portion. This can greatly improve the overlay accuracy of the transferred pattern.
[0053]
FIG. 2 shows a second embodiment. This is because a gap between the reticle R and the reticle reference substrate 13a, in addition to the blower tube 24a and the air volume adjusting mechanism 24b for blowing gas to the substrate holding portion 13b of the reticle reference portion 13 as in the first embodiment. A blower 24 provided with a blower pipe 24c for blowing air toward and toward an air volume adjusting mechanism 24d is provided.
[0054]
Since the base 5, the reticle reference portion 13 and the like are the same as those in the first embodiment, they are denoted by the same reference numerals and description thereof is omitted.
[0055]
If the radiant heat from the reticle R is reduced by blowing air to the reticle reference portion 13 and also between the reticle reference portion 13 and the reticle R, and the deformation of the reticle reference substrate 13a is reduced, the alignment of the reticle R is achieved. There is an even greater effect in maintaining accuracy. A blower unit 25 for adjusting the temperature of the reticle R is disposed around the reticle R, and is connected to the same gas supply source 26 as the blower 24 for adjusting the temperature of the reticle reference unit 13. Other points are the same as in the first embodiment.
[0056]
FIG. 3 shows a third embodiment. This blows air from the blower 34 having the internal pipe 34 a of the reticle chuck 11 of the reticle stage 2 and the air volume adjusting mechanism 34 b to the reticle reference unit 13. Since reticle stage 2, reticle chuck 11, reticle reference portion 13 and the like are the same as those in the first embodiment, they are denoted by the same reference numerals and description thereof is omitted.
[0057]
Since it is only necessary to open the internal pipe 34a of the reticle chuck 11 toward the reticle reference part 13, no air supply pipe is required around the reticle reference part 13, and the apparatus can be simplified and miniaturized.
[0058]
Other points are the same as in the first embodiment.
[0059]
FIG. 4 shows a reference example . This is provided with an internal pipe 44a provided on the substrate holding part 13b of the reticle reference part 13 and a reticle reference part temperature control device 44 which is a master reference part temperature control means composed of a heat exchanger 44b, and temperature control is provided thereto. The temperature of the reticle reference unit 13 is controlled by flowing a liquid medium such as gas or water that is the temperature adjusting medium. The heat medium supplied to the heat exchanger 44b is chlorofluorocarbon or the like and is flowed by the circulator 44c to constitute a closed circuit. The reticle reference unit 13, reticle reference substrate 13a, substrate holding unit 13b and the like are the same as those in the first embodiment, and are therefore denoted by the same reference numerals and description thereof is omitted.
[0060]
Since the temperature of the substrate holding part 13b of the reticle reference part 13 is directly controlled, there are advantages of high efficiency and quick response. Other points are the same as in the first embodiment.
[0061]
The means for directly adjusting the temperature of the reticle reference portion is not limited to the internal piping of the reticle reference portion, and may be provided outside the reticle reference portion. For example, as shown in FIG. 5, a flexible tube 54 a may be wound around the substrate holding portion 13 b of the reticle reference portion 13, and a medium such as a gas or a liquid whose temperature is adjusted may be supplied to the flexible tube 54 a.
[0062]
Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described. FIG. 6 shows a manufacturing flow of a semiconductor device (a semiconductor chip such as an IC or LSI, or a liquid crystal panel or a CCD). In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask production), a mask which is an original plate on which the designed circuit pattern is formed is produced. In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. Step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). . In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).
[0063]
FIG. 7 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed onto the wafer by exposure using the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device that has been difficult to manufacture.
[0064]
【The invention's effect】
Since this invention is comprised as mentioned above, there exists an effect as described below.
[0065]
This greatly improves the alignment accuracy of reticles, photomasks, and other masters, and can greatly increase the density and miniaturization of patterns of semiconductor devices and the like.
[Brief description of the drawings]
FIGS. 1A and 1B show an exposure apparatus according to a first embodiment, in which FIG. 1A is a partial sectional elevation view showing the entire exposure apparatus, and FIG. 1B is an enlarged partial view showing an enlarged reticle stage. .
FIGS. 2A and 2B show a reticle stage according to a second embodiment, wherein FIG. 2A is a plan view and FIG. 2B is a partially sectional elevation view.
FIGS. 3A and 3B show a reticle stage according to a third embodiment, wherein FIG. 3A is a plan view and FIG. 3B is a partially sectional elevation view.
FIG. 4 is a diagram illustrating a reticle reference unit according to one reference example .
FIG. 5 is a diagram showing another reference example .
FIG. 6 is a flowchart showing a device manufacturing method.
FIG. 7 is a flowchart showing a wafer process.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Light source 2 Reticle stage 3 Projection optical system 4 XY stage 4a Wafer chuck 5 Base 6 Alignment optical system 11 Reticle chuck 12 Reticle drive part 13 Reticle reference part 13a Reticle reference board 13b Substrate holding part 14, 24, 34 Blowers 14a, 24a , 24c Air blow pipe 44 Reticle reference part temperature control device 34a, 44a Internal piping 54a Tube body

Claims (6)

Stage means for holding an original having a pattern to be transferred to the substrate to be exposed, stage driving means for driving the stage means, a reticle chuck on which the original is placed, an internal pipe provided on the reticle chuck, An original reference part having an original reference board having an original reference mark serving as a reference for alignment of the original; and an air blower for controlling the temperature of the original reference.
The exposure apparatus characterized in that the gas blown from the blower is an inert gas and is blown onto the original reference portion through the internal pipe.   2. An exposure apparatus according to claim 1, wherein gas is blown between the original plate and the original plate reference portion. It is configured to adjust at least one of the gas flow rate, pressure, flow rate, and blowing direction based on at least one of the pattern area of the original plate, the integrated exposure energy amount, and the continuous exposure time. The exposure apparatus according to claim 1 or 2, wherein: At least one of the gas flow rate, pressure, flow rate, and blowing direction is adjusted based on a change in measurement position of at least one of the alignment mark of the original plate, the alignment mark of the substrate to be exposed, and the original reference mark. the exposure apparatus according to claim 1 to 3 any one of claims, characterized in that it is configured to. Original exposure apparatus of claims 1 to 4 any one of claims, characterized in that a reticle. A device manufacturing method comprising the step of exposing a wafer by claims 1 to 5 exposure apparatus according to any one.

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