JP3799361B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device manufacturing apparatus and a manufacturing method thereof, and more particularly, to a surface of a semiconductor layer and an insulation formed thereon during a manufacturing process using a manufacturing apparatus clustered under an atmosphere insulated from the atmosphere. It relates to the management of membrane properties.

  In recent years, a concept of clustering has been reported that realizes a series of processes in the manufacturing process of semiconductor devices without exposure to the atmosphere, and prevents the formation of natural oxide films and adhesion of pollutants due to exposure to the atmosphere. (For example, refer nonpatent literature 1). It has been verified that a high-quality semiconductor device can be obtained by using this clustered process.

On the other hand, the management of the manufacturing process of the conventional semiconductor device is performed by taking out the wafer outside the apparatus used in the process after the end of each process. For example, in the oxide film formation step, the thickness of the oxide film is measured by an ellipsometer installed outside the chamber for oxidation.
Schuegraf et al., IEEE / International Reliability and Physics Symposium 97, p.7

  However, when the conventional optical measurement method is applied to management of a manufacturing process performed using the above-described clustered manufacturing apparatus, the following problems occur.

  That is, in the process using the clustered manufacturing apparatus as described above, the characteristics of the MOS capacitor and the MOS transistor formed on the wafer are measured after many series of processes are performed on the wafer. However, there has been no method for managing the state of the wafer in the middle of the series of processes. Therefore, at the laboratory level, in the mass production process of MOS devices, there is currently no guarantee that a high-quality semiconductor device can be formed even if a manufacturing apparatus using clustering is used.

  The present invention has been made in view of such a point, and its purpose is to obtain a high quality by grasping the surface state of a wafer through optical evaluation during a series of processing using a clustered manufacturing apparatus. An object of the present invention is to provide an apparatus and a method for manufacturing a semiconductor device as a non-defective product even when a non-standard wafer is produced due to some abnormality.

In order to achieve the above object, the present invention provides the following means relating to a method for manufacturing a semiconductor device .

The method for manufacturing a semiconductor device of the present invention includes at least a first step of performing a first process on a wafer and a second step of performing a second process on the wafer subjected to the first process, A method for manufacturing a semiconductor device, wherein a series of processes including the first process and the second process are performed in a common space isolated from the atmosphere, and the method is performed at least after the first process. A third step of optically evaluating the surface state of the wafer, wherein the wafer before the third step is formed with an amorphous region implanted with impurity ions; Step 3 includes a semiconductor layer having an ion-implanted region that has been amorphized by implantation of impurity ions in a p-direction (a plane perpendicular to the optical axis, incident light, and reflected light) in a plane perpendicular to the optical axis. The direction of the line of intersection with the surface) and the s direction (p in the plane perpendicular to the optical axis) Incident linearly polarized measuring light tilted with respect to the surface of the semiconductor layer from a direction tilted with respect to the direction perpendicular to the surface of the semiconductor layer, and the measurement reflected from the semiconductor layer as elliptically polarized light When the phase difference between the p component and the s component of the reflected light (the phase difference between the component in the direction parallel to the surface of the semiconductor layer and the component in the direction perpendicular) is Δ, at least cos Δ Measuring, changing the wavelength of the measurement light to measure at least the spectrum of the cos Δ, and evaluating the state of the ion implantation region based on the shape of the spectrum of the at least cos Δ; It has.

By this method, it is possible to optically evaluate the surface state of the wafer in the third step during a series of processes being performed continuously or before the series of processes is completed and returned to the atmosphere. Become. Accordingly, it is possible to determine whether or not the conditions of the intermediate process or the entire process in the series of processes in the clustered manufacturing apparatus are appropriate, and whether or not the members formed on the wafer are acceptable. In other words, when a defect is found in the middle of the process, it is possible to take measures such as performing additional processing in the previous process, or returning to the original process and starting from the beginning. Implementation can be avoided. Further, by changing the processing conditions, it becomes possible to prevent the occurrence of subsequent defects.

Furthermore, when the wavelength of the measurement light detected as elliptically polarized light is changed by this method, cos Δ, which is a parameter related to the complex refractive index of the semiconductor layer, is obtained. The shape of the spectrum of cos Δ is obtained as information on the state of the amorphized region, that is, the degree of amorphization, the thickness of the amorphized region, etc. It becomes possible to investigate by destruction.

  In the method of manufacturing a semiconductor device, in the first step, a degassing process is performed to remove an adsorbed gas or the like on the wafer having an ion implantation region, and in the second step, the ion implantation region of the wafer is annealed. In the third step, a reference pattern showing a correlation between at least the spectrum shape of cos Δ and the thickness of the ion implantation region is prepared in advance, and the thickness of the ion implantation region is measured based on the reference pattern. Can do.

  By preparing a reference pattern showing a correlation between the thickness of the ion implantation region by destructive inspection such as RBS or TEM and the spectrum shape of cos Δ by this method, the measured spectral pattern can be compared with the reference pattern. For example, the thickness of the amorphous ion-implanted region can be measured non-destructively with high reproducibility.

  The method for manufacturing a semiconductor device may further include a step of setting annealing conditions in the second step based on a measurement result in the third step.

  By this method, annealing can be performed under more appropriate conditions.

  According to the method for manufacturing a semiconductor device of the present invention, a series of processing is performed on a wafer in a common space that is cut off from the atmosphere, and at least after the first processing of the series of processing is completed, Since the surface state is optically evaluated, it is possible to avoid performing unnecessary processes and preventing the occurrence of subsequent defects.

  Before describing embodiments of the present invention, first, semiconductor device manufacturing apparatuses used in the embodiments of the present invention will be described.

  FIG. 1 is a block diagram schematically showing a configuration of a semiconductor device manufacturing apparatus 50. In the figure, 51 is a buffer chamber, 61 is a transfer chamber, 60a and 60b are gates provided between the buffer chamber 51 and the transfer chamber 61, respectively. Around the buffer chamber 51 are load / unload chambers 52a and 52b for storing or taking out wafers in a wafer cassette, a degas chamber 53 for preheating the wafer for the purpose of expelling the adsorbed gas, and the like. A through chamber 54, an orienter chamber 55 in which an orienter for setting the orientation of the wafer with reference to the orientation flat of the wafer and the like, and a cooling chamber 56 for cooling the wafer are arranged. Further, around the transfer chamber 61, an etching chamber 62 for etching various films on the wafer and the substrate itself, an annealing chamber 63 for heat-treating the wafer, and a CVD film on the wafer are formed. A first film forming chamber for forming a film and a second film forming chamber 65 for forming a film by sputtering on the wafer are provided. That is, the chambers 53, 54, 55, 56, 62, 63, 64, and 65 are arranged in a common space under a reduced-pressure atmosphere that is cut off from the atmosphere, resulting in a so-called clustered manufacturing apparatus.

  Here, a feature of the present invention is that a common space such as an orienter chamber 55 (or buffer chamber 51, transfer chamber 61, load / unload chambers 52a and 52b, degas chamber 53, through chamber 54, or cooling chamber 56) is used. An optical evaluation device such as an ellipsometer is disposed in a part of the screen.

  In other words, the wafer state (the thickness of the ion implantation region (amorphous layer) in the substrate, the thickness of the substrate, etc.) is not exposed to the atmosphere outside the manufacturing apparatus until a series of processes such as film formation, annealing, and etching are completed. By measuring the thickness of the film with an ellipsometer, it is possible to manage the judgment of the next process and the adjustment of the process conditions in the process. The wafer state can be measured without an oxide film or adsorbed gas, that is, without undergoing a change in physical or chemical state on the surface.

  Next, the principle of measurement such as the thickness of the oxide film and the thickness of the ion implantation layer using an ellipsometer will be described.

  FIG. 2 is a side view schematically showing the configuration of a spectroscopic ellipsometer for measuring the state of the ion implantation region 15 on the wafer 11. The Xe light output from the Xe light source 20 is converted into linearly polarized light by the polarizer 21 and is incident on the wafer 11 at an angle θ 0 with respect to the direction perpendicular to the substrate surface, and the light reflected as elliptically polarized light is passed through the analyzer 22. After that, the light is incident on the spectroscope 23, and the complex refractive index N = n−ik at each wavelength is measured by the detector 24 while performing spectroscopy. However, the axis of the linearly polarized light of incident light has a p direction (direction of a line of intersection between a plane perpendicular to the optical axis and a plane including incident light and reflected light) and an s direction (p in the plane perpendicular to the optical axis). In a direction perpendicular to the direction).

  Next, the measurement principle of the spectroscopic ellipsometry used in this embodiment will be described. Assuming that the angle formed by the incident light of the Xe light on the wafer 11 shown in FIG. 2 and the normal line of the wafer main surface is θ 0, the complex refractive index N = n−ik of the sample at each wavelength is expressed by the following formula (1) , (2).

  Here, Ψ represents the amplitude reflectance ratio between the p component and the s component, and Δ represents the phase difference between the p component and the s component. That is, by measuring the tan Ψ, cos Δ of the reflected light, the complex refractive index N (= n−ik) representing the physical properties of the sample at each wavelength is obtained from the equations (1) and (2).

  Then, it is known that the thickness d of a transparent film such as an oxide film can be obtained if n and k at a certain wavelength of the measurement light are known. Currently, an ellipsometer for measuring the film thickness of an oxide film or the like is commercially available. ing.

  There is also a spectroscopic ellipsometry method in which the detection light is dispersed in a wide wavelength range and n and k in each wavelength region are obtained by ellipsometry. In that case, as described in the following embodiments, the present inventors can use the spectral shape of cos Δ obtained by spectroscopic ellipsometry to determine the film thickness of the region into which high-concentration impurity ions are implanted, It has been found that useful information regarding injection conditions and the like can be obtained.

  Next, various processes performed using the manufacturing apparatus and optical measurements related to the processes will be described individually.

(First embodiment)
In the present embodiment, a method for managing an annealing process after implantation of impurity ions will be described. For example, when annealing after ion implantation is performed using this manufacturing apparatus, a wafer having a semiconductor region (ion implantation area = amorphous layer) subjected to impurity ion implantation is loaded / unloaded chamber 52a of this manufacturing apparatus. Is set in the wafer cassette. Then, after the wafer is preheated in the degas chamber 53, the orientation chamber 55 performs measurement by the spectroscopic ellipsometry method regarding the thickness of the ion implantation region (amorphous layer) and the like. After that, it is sent from the gate 60 a to the transfer chamber 61 through the through chamber 54. Then, after setting in the annealing chamber 63, annealing (RTA or the like) for activating the implanted impurities is performed. When the processing is completed, the wafer is transferred from the transfer chamber 61 to the cooling chamber 56 via the gate 60b, and after the wafer is sufficiently cooled, it is transferred to the orienter chamber 55, and the ion implantation region of the wafer is again measured by the spectroscopic ellipsometry method. Done.

  That is, in this embodiment, the film thickness of the ion implantation region is measured using a spectroscopic ellipsometry evaluation apparatus attached to the orienter chamber 55 on the wafer before and after annealing. I am doing so. Hereinafter, an example of information regarding the characteristics of the ion implantation region obtained by the spectroscopic ellipsometry method will be described.

  FIG. 3 shows a spectrum of tan Ψ and cos Δ of reflected light from a silicon substrate that has not been subjected to ion implantation. On the other hand, FIG. 4 shows the spectrum of tan Ψ and cos Δ of the reflected light from the silicon substrate after ion implantation of high concentration impurities. As can be seen by comparing the cosΔ spectral line of FIG. 4 with the cos Δ spectral line 3A of FIG. 3, when the silicon single crystal is doped with impurities, the spectral shape of cos Δ is compared with the spectral line 3A when not implanted. It shows a tendency to move to the negative side in the long wavelength region (450 nm to 850 nm).

FIG. 5 shows the change in the spectral shape of cos Δ when the implantation energy is changed for the amorphous silicon layer. However, the dose of impurity ions (As +) is 4 × 10 ¹⁵ cm ⁻² . As can be seen from FIG. 5, in the case of ion implantation into an amorphous silicon layer, even when cos Δ, tan Ψ at a certain wavelength (for example, 630 nm) is measured or implantation energy is increased, measurement of cos Δ, tan Ψ is performed. Although it cannot be said that the value increases or decreases, the relationship between the ion implantation energy and the thickness of the ion implantation region at a certain implantation amount can be understood by examining the relationship between the spectrum shape and the ion implantation energy in advance.

  FIG. 6 shows the relationship between various implantation energy conditions (20, 30, 40, 50 (keV)) and the thickness of the ion implantation region (amorphous layer) using the spectral shape of cos Δ, tan Ψ by the spectroscopic ellipsometry method. It is a characteristic view which shows a relationship. The data of FIG. 6 is obtained by measuring the thickness of the ion implantation region with a film thickness measuring device under the implantation energy conditions (20, 30, 40, 50 (keV)) shown in FIG. By investigating the correlation between the shape and the measurement result of the thickness of the implantation region, the relationship between the ion implantation energy and the thickness of the implantation region is obtained. That is, a reference pattern of spectral shape of cos Δ, tan Ψ corresponding to the thickness of the ion implantation region is prepared in advance, and the spectral shape of cos Δ obtained as a result of measurement for each sample is compared with this reference pattern. is there. FIG. 6 also shows the relationship between the implantation energy by TEM and TRIM (calculation) and the thickness of the implantation region. As can be seen from FIG. 3, the thickness of the implantation region obtained by the spectroscopic ellipsometry method according to the present embodiment is closer to the actual measurement result by TEM than the calculated value, and nondestructive and highly accurate measurement can be performed. That is, it can be said that the evaluation method is suitable for in-line inspection.

In FIG. 7, the ion implantation energy is kept constant at 40 (keV), and the implantation amount (dose amount) is 2.0, 2.5, 3.0, 3.5, 4.0 × 10 ¹⁵ cm ^−2. It is a figure which shows the relationship between the amount of injection | pouring when changing in five steps, and the thickness of an injection | pouring area | region. The data in FIG. 7 can also be easily obtained by examining in advance the correspondence between the spectral shape such as cos Δ of spectral ellipsometry corresponding to each ion implantation amount and the measured value of the thickness of the implantation region.

However, when obtaining the data shown in FIGS. 6 and 7, a p-type silicon substrate doped with a p-type impurity in advance is used as the silicon substrate, and its resistivity is 10.0 to 15.0 (Ω · cm). The crystal orientation of the plane is (100). As the implanted ion species with As +, changing the implantation energy between 20 to 80 (keV), the injection quantity is varied between 2~4 × 10 ¹⁵ cm ^-2. Spectroscopy is performed in the range of 250 to 800 nm.

FIG. 8 is a diagram showing the in-wafer in-plane uniformity of the impurity implantation region obtained by measurement by the spectroscopic ellipsometry method. However, the measurement results are shown when As + is implanted under the conditions of implantation energy 40 (keV) and dose amount 5 × 10 ¹⁵ cm ⁻² . In the spectroscopic ellipsometry method according to the present embodiment shown in the figure, the thickness of the implantation region is 69 nm and the in-plane uniformity is 0.153%. Further, in the figure, the portion where the film thickness indicated by (−) is thin is the region where the film is amorphized. According to the in-plane uniformity measurement of the thickness of the ion implantation region by such a spectroscopic ellipsometry method, it is possible to grasp the variation in the thickness of the implantation region while being nondestructive.

  When information about the thickness of the ion implantation region is obtained, the data is output as annealing time using data conversion software. A method is adopted in which the annealing time advances to the next step when the specified time comes automatically by the cut sensor.

  Therefore, by using the data shown in FIGS. 6 and 7 to accurately grasp in advance the thickness of the ion implantation region before annealing, it is possible to appropriately determine the conditions for the annealing process as the next step. In addition, it is possible to determine whether or not the thickness of the implantation region is within an appropriate range.

  In particular, according to the method of the present embodiment, ion measurement is performed in a state in which moisture and gas adsorbed on the wafer surface are sufficiently removed in the degas chamber 53 by performing optical measurement in a state of being cut off from the atmosphere in this way. Since the thickness of the region can be grasped very accurately, the conditions for the annealing process can be set more appropriately.

  In addition, not only annealing, but if there are change software and input software in all processes, by setting a certain amount of conditions, the conditions automatically change during processing, making it possible to always provide the same product Become.

  If the ion implantation apparatus is also provided in the manufacturing apparatus 50 shown in FIG. 1, the state of the ion implantation region of the wafer can be detected without exposing to the atmosphere after the ion implantation, so that more accurate optical measurement can be performed. It becomes possible. In addition, after the natural oxide film is removed in the etching chamber 62 before annealing, optical measurement may be performed in the orienter chamber 55.

  Next, optical measurement of the state of the ion implantation region after annealing will be described.

  9 to 10 show spectral lines of tan Ψ and cos Δ by a spectroscopic ellipsometry method with respect to the region where impurity ions are implanted into the silicon substrate under the conditions shown in the respective drawings.

  Comparing FIG. 9 and FIG. 10, the slope of the decreasing region Ra and the increasing region Rc is slightly gentler in the spectral line of FIG. 9 than in the spectral line of FIG. This can be seen, for example, because the value of cos Δ at the same wavelength in FIG. 10 is smaller than the value of cos Δ at the wavelength of 300 nm in FIG. Therefore, it can be seen that the condition shown in FIG. 10 is less likely to make the silicon substrate amorphous. Here, when the condition shown in FIG. 9 is compared with the condition shown in FIG. 10, the condition shown in FIG. 10 is only different in that the current density is large. That is, when ion implantation with a large current as shown in FIG. 10 is performed, a so-called beam annealing effect is generated in which the amorphous layer is restored to a crystalline state by ion implantation. That is, the annealing effect can be understood from the spectrum shape after annealing. Therefore, by examining in advance the relationship between the spectral shape after annealing, annealing conditions, and various characteristics of the ion implantation region (source / drain region), the annealing conditions can be adjusted appropriately, and the conditions for the next process, for example, silicidation The manufacturing process can be managed, for example, by determining processing conditions for the process and determining whether or not to proceed to the next process.

  Moreover, even if an optical measurement is performed between the annealing process and the next process, the wafer is not taken out from the common space that is cut off from the atmosphere, so a series of processing can proceed without affecting the next process. Can do.

(Second Embodiment)
Next, a second embodiment relating to a method for managing a sputtering process performed in the manufacturing apparatus 50 shown in FIG. 1 will be described.

  For example, when sputtering for forming a metal film on the ion-implanted region subjected to the annealing process in the first embodiment is performed using this manufacturing apparatus, the wafer is preheated in the degas chamber 53. Then, it passes through the through chamber 54 and is sent from the gate 60a to the transfer chamber 61. And after setting in the 2nd film-forming chamber 65, sputtering for forming a metal film on a wafer is performed. Thereafter, when the processing is completed, the thickness of the metal film is measured by an ellipsometer using the wavelength in the ultraviolet region in the orienter chamber 55 through the cooling chamber 56.

  And if the information regarding the thickness of a metal film is obtained, the condition of the following process will be set using the data conversion software for the data. In other words, when the change software is input to the processing conditions of the next process, the sensor is automatically switched, and programming is performed so that the conditions of the next process are changed. If the next process is an etching process for patterning the metal film, an etching time for removing the metal film over the entire thickness in the partially removed region is set. Furthermore, if the next process is a silicide process in which a metal film reacts with silicon, a heat treatment time and temperature for silicidation are set.

  If the thickness of the metal film is insufficient, the wafer is returned to the second film forming chamber 65 and an instruction to perform additional deposition is given. Further, when the metal film is too thick, a time for performing etching for setting the metal film to a predetermined thickness is set.

  Therefore, by accurately grasping in advance the thickness of the metal film formed in the sputtering process, the conditions for the subsequent etching process and heat treatment process can be appropriately determined. In addition, it can be determined whether or not the thickness of the metal film is within an appropriate range.

  In particular, according to the method of the present embodiment, moisture and gas in the atmosphere are adsorbed on the surface of the formed film such as a metal film by performing an optical measurement in a state of being cut off from the atmosphere as described above. The thickness of the film can be accurately measured in a state where no natural oxide film is formed. Moreover, even if optical measurement is performed between the sputtering process and the next process, the wafer is not taken out from the common space that is cut off from the atmosphere, so a series of processes can be performed without affecting the next process. Can do.

  In addition, although this embodiment demonstrated sputtering, it can apply similarly to the film-forming process by CVD.

(Third embodiment)
Next, a third embodiment relating to a method for managing an etching process performed in the manufacturing apparatus shown in FIG. 1 will be described.

  When etching for patterning the metal film formed by the sparing process in the second embodiment is performed using this manufacturing apparatus, the wafer is preheated in the degas chamber 53 and then the through chamber. Then, the signal is sent from the gate 60a to the transfer chamber 61. Then, after being set in the etching chamber 62, the metal film is etched. Thereafter, when it is determined that the etching is completed, the thickness of the remaining film of the metal film is measured by an ellipsometer using the wavelength in the ultraviolet region through the cooling chamber 56 and the orienter chamber 55. That is, after etching for a certain time, the thickness of the remaining film is measured using data software to determine whether or not the metal film is completely removed in the region where the metal film is to be removed.

  If there is a remaining metal film in the region to be removed, the wafer is returned to the etching chamber 62 and additional etching is performed.

  Further, in the case of the whole surface etching, when the film thickness of the metal film or the like becomes thin, the etching amount is measured from the step. Then, how much of the remaining amount should be etched is converted into time by the recipe.

  Further, when the etching rate, the measured film thickness, and the target remaining film thickness are input, the etching time and the plasma power can be adjusted.

(Other embodiments)
In each of the above embodiments, the ellipsometer is attached to the orienter chamber 55 or the cooling chamber 56. However, depending on the type of processing, it can be directly attached to the chamber in which the processing is performed.

It is a block diagram which shows clearly the structure of the clustered manufacturing apparatus used in embodiment of this invention. It is a figure which shows roughly the structure of the optical evaluation apparatus used for evaluation in embodiment of invention. It is the data by the experiment conducted in embodiment of invention, Comprising: It is a figure which each shows the spectrum of cos (PSI) and cos (DELTA) in the low concentration ion implantation area | region. It is the data by the experiment conducted in embodiment of invention, Comprising: It is a figure which shows the spectrum of cos (PSI) and cos (DELTA) in a high concentration ion implantation area | region, respectively. It is data by the experiment conducted in the embodiment of the invention, and shows the spectrum of cos Δ in the ion implantation region when high concentration ion implantation is performed by changing the implantation energy. It is the data by the experiment conducted in embodiment of invention, Comprising: It is a figure which shows the spectrum of tan (PSI) in an ion implantation area | region when ion implantation of high concentration is performed by changing the implantation energy. It is data of 1st Embodiment, Comprising: It is a figure which shows the relationship between the ion implantation amount obtained by the measurement by spectroscopic ellipsometry, and the thickness of an ion implantation area | region. It is data of 1st Embodiment, Comprising: It is a figure which shows the in-wafer uniformity of the thickness of the ion implantation area | region obtained by the measurement by spectroscopic ellipsometry. The data in the first embodiment, which is a spectrum of cos Δ, tan Ψ in a silicon amorphous region in which ion implantation of 1 × 10 ¹⁴ cm ⁻² is performed at a current density of 615 μA using an ion implantation apparatus of company B. It is. The data in the first embodiment, which is a spectrum of cos Δ, tan Ψ in a silicon amorphous region in which ion implantation of 1 × 10 ¹⁴ cm ⁻² is performed at a current density of 2000 μA using an ion implanter of company B It is.

Explanation of symbols

11 Wafer 20 Xe Light Source 21 Polarizer 22 Analyzer 23 Spectrometer 24 Detector

Claims (3)

A first process for performing a first process on the wafer; and a second process for performing a second process on the wafer subjected to the first process. The first process and the second process. A method for manufacturing a semiconductor device in which a series of processes including:
A third step of optically evaluating the surface state of the wafer after at least the first treatment ;
In the wafer before the third step is performed, an amorphous region is formed by implanting impurity ions.
The third step is
In a semiconductor layer having an ion-implanted region in which impurity ions are implanted to be amorphous, a p-direction (a cross line between a plane perpendicular to the optical axis and a plane including incident light and reflected light) in a plane perpendicular to the optical axis. Direction) and s direction (in the plane perpendicular to the optical axis, the direction perpendicular to the p direction) and the linearly polarized measurement light from the direction inclined with respect to the direction perpendicular to the surface of the semiconductor layer. An incident step;
Measuring at least cos Δ when the phase difference between the p component and the s component of the reflected light of the measurement light reflected as elliptically polarized light from the semiconductor layer is Δ,
Changing the wavelength of the measurement light to measure at least the spectrum of cos Δ;
Evaluating the state of the ion implantation region based on the shape of the spectrum of at least the cos Δ;
A method for manufacturing a semiconductor device, comprising: In the manufacturing method of the semiconductor device according to claim 1 ,
In the first step, a degassing process is performed to remove the adsorption gas on the wafer having the ion implantation region,
In the second step, the ion implantation region of the wafer is annealed,
In the third step, a reference pattern showing a correlation between at least the spectrum shape of cos Δ and the thickness of the ion implantation region is prepared in advance, and the thickness of the ion implantation region is measured based on the reference pattern. A method of manufacturing a semiconductor device. In the manufacturing method of the semiconductor device according to claim 1 ,
A method for manufacturing a semiconductor device, further comprising: setting an annealing condition in the second step based on a measurement result in the third step.

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