JP3600143B2 - Plasma processing apparatus, plasma processing system, their performance confirmation system, and inspection method - Google Patents

Description

前記直列共振周波数ｆ_０’と前記電力周波数ｆ_ｅ とが、式（１）なる関係を満たしてなることにより、上記のプラズマ発光時におけるモデル的な容量Ｃ_０”から規定される直列共振周波数ｆ_０”の値と、非プラズマ発光時における電極４，８間の容量から規定される直列共振周波数ｆ_０’の値との関係を設定することができる。したがって、直列共振周波数ｆ_０’のｄ／δの平方根の逆数倍の値が、電力周波数ｆ_ｅ よりも大きく設定されることにより、プラズマ発光時における電極４，８の直列共振周波数ｆ_０’を電力周波数ｆ_ｅ に対して設定し、プラズマ発光時の電力消費効率の向上を図ることが可能となる。
【０１０５】
そして、本実施形態のプラズマ処理装置９１においては、プラズマチャンバ９６は、プラズマチャンバ９５と略同等の構造とされている。そして、このプラズマチャンバ９６に対しても、上記第１直列共振周波数ｆ_０ をプラズマチャンバ９５と同様にして設定する。
具体的には、これらプラズマチャンバ９５，９６において、いずれも、電力周波数ｆ_ｅ を４０．６８ＭＨｚに設定して、第１直列共振周波数ｆ_０ を測定する。ところが、この第１直列共振周波数ｆ_０ は、機械的な構造をその多くの要因としてきまる電気的高周波的な特性であり、各実機ごとに異なっていると考えられる。
【０１０６】
そこで、計測したプラズマチャンバ９５に対する第１直列共振周波数ｆ_０９５ 、プラズマ処理室９６に対する第１直列共振周波数ｆ_０９６ のうち、その最大値ｆ_０ｍａｘと最小値ｆ_０ｍｉｎに対して、
（ｆ_０ｍａｘ−ｆ_０ｍｉｎ）／（ｆ_０ｍａｘ＋ｆ_０ｍｉｎ） （１０）
のように複数のプラズマチャンバ９５，９６の第１直列共振周波数ｆ_０ のばらつきとして定義し、この値を０．０３より小さい範囲の値に設定する。この際、１直列共振周波数ｆ_０ のばらつきを設定する方法としては、上述の▲１▼〜▲４▼等のような手法を適用することができる。
【０１０７】
また、本実施形態においては、プラズマチャンバ９５，９６の前記測定用端子６１に、それぞれ高周波特性測定器ＡＮが切り替え自在に接続されている。これは、非測定時つまりプラズマ発生時等において、測定用端子６１，６１と高周波特性測定器ＡＮとの接続をプラズマチャンバ９５，９６から切り離すようにスイッチＳＷ１，ＳＷ２を切り替えることにより、プラズマ発生時に高周波測定器ＡＮに対して作用する電気的影響を防止することができる。これにより、単一のインピーダンス測定器ＡＮを兼用してこれら複数のプラズマチャンバ９５，９６の高周波特性測定をおこなうことができる。これにより、プラズマチャンバ９５，９６と高周波特性測定器ＡＮとの接続を着脱することなく、スイッチＳＷ１，ＳＷ２切り替えのみにより、インピーダンスなどの測定による高周波特性Ａ、特に第１直列共振周波数ｆ_０ の測定を容易におこなうことが可能となる。
【０１０８】
また、本実施形態においては、プラズマチャンバ９５，９６における、前記測定位置近辺の分岐点Ｂと前記測定用端子６１，スイッチＳＷ２を介して高周波特性測定器ＡＮとの間の高周波特性Ａ（インピーダンスＺ）がそれぞれ等しく設定されている。これは、具体的に各プラズマチャンバ９５，９６の整合回路２Ａ出力側最終段近辺の分岐点ＢからスイッチＳＷ２付近を含んで前記測定範囲のインピーダンスＺ_２ と、スイッチＳＷ２から高周波特性測定器ＡＮまでの同軸ケーブルの長さとが、それぞれ等しく設定されている手段を適応することができる。
【０１０９】
上記構成のプラズマ処理装置９１は、ゲートｇ０を開放して被処理基板１６をロードロック室９３に搬入し、ゲートｇ０を閉塞してロードロック室９３を低真空ポンプによって排気する。ゲートｇ１，ｇ２を開放してロードロック室９３に搬入された基板１６を、搬送室９２の搬送ロボットの移載アームによって熱処理室９９に移動し、ゲートｇ１，ｇ２を閉塞して搬送室９２と熱処理室９９を高真空ポンプによって排気する。ついで基板１６を加熱処理し、終了後、ゲートｇ２，ｇ４を開放して熱処理された基板１６を、搬送室９２の搬送ロボットの移載アームによってプラズマチャンバ９５に移動する。プラズマチャンバ９５の基板１６を反応処理し、終了後ゲートｇ４，ｇ３を開放して処理された基板１６を、搬送室９２の搬送ロボットの移載アームによってプラズマチャンバ９６に移動する。プラズマチャンバ９６の基板１６を反応処理し、終了後ゲートｇ３，ｇ１を開放して基板１６を、搬送室９２の搬送ロボットの移載アームによってロードロック室９３に移動する。
【０１１０】
このとき、例えば各処理室における成膜条件等の処理条件や処理シーケンスをオペレータが設定する他は、各部の動作が制御部により制御されており、自動運転する構成になっている。したがって、このプラズマ処理装置９１を使用する際には、処理前の被処理基板１６をロードロック室９３のローダカセットにセットし、オペレータがスタートスイッチを操作すれば、基板搬送ロボットによりローダカセットから各処理室内に被処理基板１６が搬送され、各処理室で一連の処理が順次自動的に行われた後、基板搬送ロボットによりアンローダカセット（ローダカセット）に収容される。
【０１１１】
上記構成のプラズマチャンバ９５，９６においては、第１実施形態と同様に、サセプタ電極８上に被処理基板１６を載置し、高周波電源１から高周波電極４とサセプタ電極８の双方にそれぞれ高周波電力を印加するとともにガス導入管１７からシャワープレート６を介して反応ガスをチャンバ室６０内に供給してプラズマを発生させ、被処理基板１６上にアモルファスシリコン膜、シリコン酸化膜、シリコン窒化膜等を成膜する。
【０１１２】
本実施形態のプラズマ処理装置９１およびその検査方法においては、第１実施形態と同等の効果を奏するとともに、各プラズマチャンバ９５，９６における前記第１直列共振周波数ｆ_０ のばらつきが０．０３より小さい範囲の値に設定されてなることで、複数のプラズマチャンバ９５，９６に対してインピーダンス、共振周波数特性等の電気的高周波的な特性の機差をなくすことが可能となり、これにより、インピーダンス特性を指標として一定の管理幅内に複数のプラズマチャンバの状態を設定することが可能となるので、個々のプラズマチャンバ９５，９６において、プラズマ空間で消費される実効的な電力等をそれぞれ略均一にすることができる。
その結果、複数のプラズマチャンバ９５，９６に対して同一のプロセスレシピを適用して、略同一のプラズマ処理結果を得ること、つまり、複数のプラズマチャンバにおいて例えば成膜をおこなった際に、膜厚、絶縁耐圧、エッチングレート等、略均一な膜特性の膜を得ることが可能となる。具体的には、上記のばらつきの値を０．０３より小さい範囲に設定することにより、略同一の条件で積層をおこなったプラズマチャンバにおいて、膜厚のばらつきの値を±２％の範囲におさめることができる。
【０１１３】
さらに、本実施形態のプラズマ処理装置９１においては、複数のプラズマチャンバ９５，９６の前記整合回路２Ａの出力端子位置ＰＲにインピーダンス測定用端子（測定用端子）６１を設け、この測定用端子６１にインピーダンス測定器ＡＮを着脱自在に接続するとともに、スイッチＳＷ１，ＳＷ２を設けることで、複数のプラズマチャンバ９５，９６のインピーダンス特性測定時において、第１実施形態のようにプラズマチャンバ９５，９６と整合回路２Ａとを切り離すために、電力供給線と整合回路２Ａとを着脱する必要がない。このため、前記プラズマチャンバ９５，９６のインピーダンス特性を測定する際のプロービングを容易におこなうことが可能となり、第１直列共振周波数ｆ_０ の測定時における作業効率を向上することができる。
【０１１４】
さらに、これら複数のプラズマチャンバ９５，９６においてインピーダンスＺ_１ とインピーダンスＺ_２ とを等しく設定することにより、個々のプラズマチャンバ９５，９６において、プラズマチャンバ９５，９６と整合回路２Ａとを着脱することなく、かつ、インピーダンス測定用プローブ１０５を着脱することなく、スイッチＳＷ１，ＳＷ２切り替えのみによりインピーダンス特性の測定および第１直列共振周波数ｆ_０ の測定と、プラズマ処理装置の動作状態つまりプラズマ発生状態と、の切り替えを容易におこなうことが可能となる。
ここで、インピーダンス特性の測定および第１直列共振周波数ｆ_０ の測定時において、スイッチＳＷ１，ＳＷ２切り替えのみにより複数のプラズマチャンバ９５，９６を順に切り替えることができ、第１直列共振周波数ｆ_０ の測定時における作業効率を向上することができる。
【０１１５】
同時に、本実施形態のプラズマ処理装置９１およびその検査方法においては、プラズマチャンバ９５，９６における、前記測定位置近辺の分岐点Ｂと前記測定用端子６１，スイッチＳＷ２を介して高周波特性測定器ＡＮとの間の高周波特性Ａ（インピーダンスＺ）がそれぞれ等しく設定されているため、個々のインピーダンス測定端子６１に接続されたインピーダンス測定器ＡＮからのインピーダンス測定値を、複数のプラズマチャンバ９５，９６において整合回路２Ａ出力側最終段の出力位置ＰＲから測定した値と同等と見なすことができるため、第１直列共振周波数ｆ_０ の算出の補正が個々のプラズマチャンバ９５，９６において不要となり、実測値の換算が不要となり、作業効率を向上し、第１直列共振周波数ｆ_０ の測定をより正確におこなうことができる。
さらに、複数のプラズマチャンバ９５，９６において直列共振周波数ｆ_０’と電力周波数ｆ_ｅ との値を設定することにより、直接プラズマを発光させる前記電極４，８の周波数特性をそれぞれのプラズマチャンバ９５，９６において規定できるため、プラズマ発光空間に対して電力をより効果的に投入することができ、本実施形態のプラズマ処理装置９１全体でさらなる電力消費効率の向上か、または、処理効率の向上を図ることが可能となる。
【０１１６】
なお、本実施形態において、２つのスイッチＳＷ１およびスイッチＳＷ２を設ける構成としたが、分岐点Ｂから出力端子位置ＰＲまでと分岐点Ｂからプローブまでのインピーダンスが等しく設定されていればよく、例えば１つのスイッチによりこれらの接続を切り替え可能とすることもできる。
また、、図１６に示すように、それぞれのプラズマチャンバ９５，９６のスイッチＳＷ２を共通として、測定時に被測定プラズマチャンバを切り替える単一のスイッチＳＷ４を有する構成としてもよい。
【０１１７】
さらに、本実施形態においては、プラズマ励起電極４に対する電力周波数ｆ_ｅ と第１直列共振周波数ｆ_０ とを設定したが、サセプタ電極側８に対する周波数を設定するよう対応することも可能である。この場合、図１１にＰＲ’で示すように、インピーダンス測定範囲を規定する整合回路２５の出力端子位置を設定することができる。
さらに、平行平板型の電極４，８を有するタイプに変えて、ＩＣＰ（ｉｎｄｕｃｔｉｖｅ ｃｏｕｐｌｅｄ ｐｌａｓｍａ）誘導結合プラズマ励起型、ＲＬＳＡ（ｒａｄｉａｌ ｌｉｎｅ ｓｌｏｔ ａｎｔｅｎｎａ）ラジアルラインスロットアンテナ型などのプラズマ処理装置や、ＲＩＥ（Ｒｉａｃｔｉｖｅ Ｉｏｎ Ｅｔｃｈｉｎｇ）反応性スパッタエッチング用の処理装置に適用することもできる。
なお、電極４，８に替えて、ターゲット材を取り付けることにより、プラズマ処理としてスパッタリングをおこなうことも可能である。
【０１１８】
以下、本発明に係るプラズマ処理装置，プラズマ処理システムおよびこれらの性能確認システム，検査方法の第３実施形態を、図面に基づいて説明する。
［第３実施形態］
図１５は本実施形態のプラズマ処理システムの概略構成を示す模式図である。
【０１１９】
本実施形態のプラズマ処理システムは、図１に示した第１実施形態と略同等のプラズマ処理装置７１，７１’と、図１０に示した第２本実施形態と略同等のプラズマ処理装置９１と、を組み合わせて概略構成されている。先に説明した第１，第２実施形態の構成要素に対応するものには同一の符号を付してその説明を省略する。
【０１２０】
本実施形態のプラズマ処理システムは、図１５に示すように、３つのプラズマ処理室ユニット（プラズマチャンバ）９５，９６，９７を有するプラズマ処理装置７１、２つのプラズマ処理室ユニット（プラズマチャンバ）９５，９６を有するプラズマ処理装置９１、および、３つのプラズマ処理室ユニット（プラズマチャンバ）９５，９６，９７を有するプラズマ処理装置７１’が製造ラインの一部を構成するものとされている。
ここで、図１に示した第１実施形態のプラズマ処理装置７１，７１’の部分において、プラズマ処理室ユニット（プラズマチャンバ）７５，７６，７７に替えて、図１０に示した第２実施形態における２周波数励起タイプのプラズマ処理室ユニット（プラズマチャンバ）９５と略同等のプラズマ処理室ユニットを３つ有する構成とされており、これらプラズマ処理室ユニット（プラズマチャンバ）９５，９６，９７は略同一の構造とされている。
【０１２１】
本実施形態のプラズマ処理システムは、図１５に示すように、各プラズマチャンバ９５，９６，９７のインピーダンス測定用端子６１がスイッチＳＷ３を介してインピーダンス測定器ＡＮに接続されている。スイッチＳＷ３は各プラズマチャンバ９５，９６，９７の測定時に測定対象のプラズマチャンバ９５，９６，９７とインピーダンス測定器ＡＮとのみを接続して、それ以外のプラズマチャンバ９５，９６，９７を切断するよう切り替えるスイッチとして設けられている。そして、この測定用端子６１から、スイッチＳＷ３までのインピーダンスが、各プラズマチャンバ９５，９６，９７に対して等しくなるように、測定用の同軸ケーブルの長さが等しく設定されている。インピーダンス測定用端子６１には、図１１に示す第２実施形態と同様にして、インピーダンス測定器ＡＮのプローブが着脱自在に接続されている。
【０１２２】
ここで、本実施形態の各プラズマチャンバ９５，９６，９７における第１直列共振周波数ｆ_０ は、スイッチＳＷ３を切り替えることにより、第２実施形態と同様にして測定し、例えば、４０．６８ＭＨｚとされる電力周波数ｆ_ｅ に対して、
ｆ_０ ＞ ３ｆ_ｅ （４）
を満たすように、第１直列共振周波数ｆ_０ を１２３．７８ＭＨｚとして設定する。
【０１２３】
そして、計測したプラズマチャンバ９５，９６，９７に対する第１直列共振周波数ｆ_０ のうち、その最大値ｆ_０ｍａｘと最小値ｆ_０ｍｉｎに対して、
（ｆ_０ｍａｘ−ｆ_０ｍｉｎ）／（ｆ_０ｍａｘ＋ｆ_０ｍｉｎ） （１０）
のように複数のプラズマチャンバ９５，９６，９７の第１直列共振周波数ｆ_０ のばらつきとして定義し、この値を第２実施形態と同様に０．０３より小さい範囲の値に設定する。
さらに、本実施形態においては、第２実施形態と同様にプラズマ励起電極４とサセプタ電極８との間のプラズマ電極容量Ｃ_ｅ によって規定される直列共振周波数ｆ_０’を、前記電力周波数ｆ_ｅ の３倍より大きな範囲の値に設定する。
ｆ_０’ ＞ ３ｆ_ｅ （５）
同時に、本実施形態においては、プラズマ励起電極４とサセプタ電極８との間のプラズマ電極容量Ｃ_ｅ によって規定される直列共振周波数ｆ_０’を、前記電力周波数ｆ_ｅ に対して、第２実施形態と同様に上記式（１）なる関係を満たすように、直列共振周波数ｆ_０’が、電力周波数ｆ_ｅ の（電極間の距離ｄ／プラズマ非発光部の距離δ）の平方根倍よりも大きく設定することができる。
【０１２４】
本実施形態のプラズマ処理システムにおいては、例えば、プラズマ処理前処理をおこなった被処理基板１６に、プラズマ処理装置７１のプラズマチャンバ９５，９６，９７において成膜処理をおこない、ついで、熱処理室７９において加熱処理をおこない、その後、レーザーアニール室７８においてアニール処理をおこなう。次いで、この被処理基板１６をプラズマ処理装置７１から搬出し、図示しないプラズマ処理装置７１と同等の装置におけるプラズマ処理室において、被処理基板１６に順次第２，第３の成膜処理をおこなう。
次いで、このプラズマ処理装置から搬出した被処理基板１６に、図示しない別の処理装置において、フォトリソグラフィー工程によりフォトレジストの形成をおこなう。
そして、被処理基板１６をプラズマ処理装置９１に搬入し、プラズマチャンバ９５，９６においてプラズマエッチングをおこない、次いで、この被処理基板１６をプラズマ処理装置９１から搬出し、図示しないプラズマ処理装置９１と同等の装置におけるプラズマチャンバにおいて、被処理基板１６に成膜処理をおこなう。
次いで、図示しないプラズマ処理装置から搬出された被処理基板１６に、図示しない他の処理装置において、レジストを剥離し、新たにフォトリソグラフィー工程によりパターニングする。
最後に、プラズマ処理装置７１’のプラズマチャンバ９５、９６，９７において被処理基板１６に順次第１，第２，第３の成膜処理がおこなわれ、被処理基板１６をプラズマ処理後処理へと送り、製造ラインにおける本実施形態のプラズマ処理システムにおける工程は終了する。
【０１２５】
本実施形態のプラズマ処理システムおよびその検査方法においては、第１，第２実施形態と同等の効果を奏するとともに、プラズマチャンバ９５，９６，９７の第１直列共振周波数ｆ_０ のうち、その最大値ｆ_０ｍａｘと最小値ｆ_０ｍｉｎのばらつきを、０．０３より小さい範囲の値に設定することで、複数のプラズマ処理装置７１，９１，７１’において、それぞれ、各プラズマチャンバ９５，９６，９７に対する電気的高周波的な特性の機差をなくすことが可能となり、これにより、プラズマ処理システム全体においてインピーダンス特性を指標とする一定の管理幅内に複数のプラズマチャンバ９５，９６，９７の状態を設定することが可能となるので、個々のプラズマチャンバ９５，９６，９７において、発生するプラズマ密度等をそれぞれ略均一にすることができる。
【０１２６】
その結果、プラズマ処理システム全体において複数のプラズマチャンバ９５，９６，９７に対して同一のプロセスレシピを適用して、略同一のプラズマ処理結果を得ること、つまり、複数のプラズマチャンバ９５，９６，９７において例えば成膜をおこなった際に、膜厚、絶縁耐圧、エッチングレート等、略均一な膜特性の膜を得ることが可能となる。具体的には、上記のばらつきの値を０．０３より小さい範囲に設定することにより、略同一の条件で積層をおこなったプラズマチャンバ９５，９６，９７において、膜厚のばらつきの値を±２％の範囲におさめることができる。
そのため、従来考慮されていなかったプラズマ処理システムの全般的な電気的高周波的特性を設定することが可能となり、個々のプラズマチャンバ９５，９６，９７におけるプラズマ発生の安定性を期待することができる。その結果、動作安定性が高く、各プラズマチャンバ９５，９６，９７で均一な動作が期待できるプラズマ処理システムを提供することが可能となる。
これにより、単一のプラズマ処理装置よりも多数のプラズマチャンバ９５，９６，９７に対する膨大なデータから外部パラメータと実際の基板を処理するような評価方法による処理結果との相関関係によるプロセス条件の把握を不必要とすることができる。
【０１２７】
したがって、本実施形態のプラズマ処理システムおよびその検査方法によれば、新規設置時や調整・保守点検時において、各プラズマチャンバ９５，９６，９７ごとの機差をなくして処理のばらつきをなくし、各プラズマチャンバ９５，９６，９７において同一のプロセスレシピにより略同一の処理結果を得るために必要な調整時間を、被処理基板１６への実際の成膜等による検査方法を採用した場合に比べて、第１直列共振周波数ｆ_０ を測定することにより、大幅に短縮することができる。しかも、処理をおこなった基板の評価によりプラズマ処理システムの動作確認および、動作の評価をおこなうという２段階の方法でなく、ダイレクトにプラズマ処理システムの評価を、しかも、プラズマ処理システムの実機が設置してある場所で短時間におこなうことが可能である。その上、被処理基板１６への実際の成膜等による検査方法を採用した場合、別々におこなうしかなかった複数のプラズマチャンバ９５，９６，９７に対する結果をほぼ同時に実現することができる。
このため、製造ラインを数日あるいは数週間停止してプラズマ処理システムの動作確認および、動作の評価をする必要がなくなり、製造ラインとしての生産性を向上することができる。また、このような調整に必要な検査用基板等の費用、この検査用基板の処理費用、および、調整作業に従事する作業員の人件費等、コストを削減することが可能となる。
【０１２８】
さらに、本実施形態におけるプラズマ処理システムにおいては、各プラズマチャンバ９５，９６，９７の第１直列共振周波数ｆ_０ を、前記電力周波数ｆ_ｅ の３倍より大きな範囲の値に設定することにより、従来は、考慮されていなかった複数のプラズマチャンバ９５，９６，９７の電気的高周波的な特性を一括して適正な範囲に収めることができる。これにより、動作安定性を向上して、従来一般的に使用されていた１３．５６ＭＨｚ程度以上の高い周波数の電力を投入した場合であっても、すべてのプラズマチャンバ９５，９６，９７において、高周波電源１からの電力をプラズマ励起電極４とサセプタ電極８との間のプラズマ発生空間に効率よく導入することが可能となる。同時に、同一周波数を供給した場合に、従来のプラズマ処理システムと比べてプラズマ空間で消費される実効的な電力の向上をすべてのプラズマチャンバ９５，９６，９７において図ることができる。その結果、プラズマ処理システム全体としてのプラズマ励起周波数の高周波化による処理速度の向上を図ること、つまり、すべてのプラズマチャンバ９５，９６，９７において、プラズマＣＶＤ等により膜の積層をおこなう際には、堆積速度の向上を図ることができる。同時に、すべてのプラズマチャンバ９５，９６，９７において、プラズマ発生の安定性を期待することができる結果、個々のプラズマ処理装置７１，９１，７１’としての動作安定性が高く、同時に全体として動作安定性の高いプラズマ処理システムを提供することが可能となる。しかも、これらを、複数のプラズマチャンバ９５，９６，９７において同時に実現することができる。
【０１２９】
したがって、複数のプラズマチャンバ９５，９６，９７において、プラズマ密度の上昇によりそれぞれ被処理基体１６における膜面内方向におけるプラズマ処理の均一性の向上を図ることができ、成膜処理においては膜厚の膜面内方向分布の均一性の向上を図ることが可能となる。同時に、プラズマ密度の上昇により、プラズマＣＶＤ、スパッタリングなどの成膜処理においては、成膜状態の向上、すなわち、堆積した膜における絶縁耐圧や、エッチングに対する耐エッチング性、そして、いわゆる膜の「固さ」つまり膜の緻密さ等の膜特性の向上を図ることが可能となる。
【０１３０】
また、同一周波数を供給した場合に、従来のプラズマ処理システムと比べて生成するプラズマ密度の上昇を図ることができるため、プラズマ処理システム全体として電力の消費効率を向上し、同等の処理速度もしくは膜特性を得るために、従来より少ない投入電力ですむようにできる。しかも、これらを、複数のプラズマチャンバ９５，９６，９７において実現することができる。したがって、プラズマ処理システム全体の電力損失の低減を図ること、ランニングコストの削減を図ること、生産性の向上を図ることがより一層可能になる。同時に、処理時間をより短縮することが可能となるため、プラズマ処理に要する電力消費を減らせることから環境負荷となる二酸化炭素の総量をより削減することが可能となる。
【０１３１】
本実施形態におけるプラズマ処理システムにおいては、各プラズマチャンバ９５，９６，９７の直列共振周波数ｆ_０’と前記電力周波数ｆ_ｅ との値を設定することにより、直接プラズマを発光させる前記電極４，８の周波数特性を規定できるため、各プラズマチャンバ９５，９６，９７のプラズマ発光空間に対して電力をより効果的に投入することができ、プラズマ処理システム全体に対してさらなる電力消費効率の向上か、または、処理効率の向上を図ることが可能となる。
【０１３２】
本実施形態のプラズマ処理システムにおいては、各プラズマチャンバ９５，９６，９７の前記整合回路２Ａの出力端子位置ＰＲにインピーダンス測定用端子６１を設け、このインピーダンス測定用端子６１に単一のインピーダンス測定器ＡＮをスイッチＳＷ３によって切り替え自在に接続するとともに、スイッチＳＷ１，ＳＷ２を設けることで、プラズマ処理システムの個々のプラズマチャンバ９５，９６，９７のインピーダンス特性測定時において、第１実施形態のようにプラズマチャンバ９５と整合回路２Ａとを切り離すために、電力供給線と整合回路２Ａとを着脱する必要がない。また、単一のインピーダンス測定器ＡＮによって複数のプラズマチャンバ９５，９６，９７のインピーダンス特性および共振周波数特性測定をおこなうことができる。
【０１３３】
このため、前記プラズマチャンバ９５，９６，９７のインピーダンス特性を測定する際のプロービングを容易におこなうことが可能となり、第１直列共振周波数ｆ_０ の測定時における作業効率を向上することができる。また、プラズマチャンバ９５，９６，９７と整合回路２Ａとを着脱することなく、かつ、インピーダンス測定用プローブ１０５を着脱することなく、スイッチＳＷ１，ＳＷ２切り替えのみによりインピーダンス特性の測定および第１直列共振周波数ｆ_０ の測定を容易におこなうことが可能となる。
【０１３４】
さらに、スイッチＳＷ１，ＳＷ２を設けてこれらのインピーダンスＺ_１ とインピーダンスＺ_２ とを等しく設定し、同時に、測定用端子６１からスイッチＳＷ３までのインピーダンスを複数のプラズマ処理装置７１，７１’、９１における各プラズマチャンバ９５，９６，９７に対して等しくなるように設定することで、スイッチＳＷ１，ＳＷ２，ＳＷ３を切り替えるだけで、インピーダンス測定端子６１に接続されたインピーダンス測定器ＡＮからのインピーダンス測定値を、整合回路２Ａ出力側最終段の出力位置ＰＲから測定した値と同等と見なすことができる。
同時に、各プラズマチャンバ９５，９６，９７のインピーダンス特性に対する測定用端子６１からスイッチＳＷ３までのインピーダンス特性の差異を考慮する必要がなくなるため、複数のプラズマ処理装置７１，７１’、９１におけるプラズマチャンバ９５，９６，９７に対する第１直列共振周波数ｆ_０ の算出の補正が不要となり、実測値の換算が不要となり、プラズマ処理システムの電気的高周波的特性の設定における作業効率を向上し、第１直列共振周波数ｆ_０ の測定をより正確におこなうことができる。
【０１３５】
なお、本実施形態において、スイッチＳＷ１，ＳＷ２，ＳＷ３を測定しようとする各プラズマチャンバ９５，９６，９７に対する切り替え動作を連動させることが可能であり、また、２つのスイッチＳＷ１およびスイッチＳＷ２の構成を、分岐点から出力端子位置ＰＲまでと分岐点からプローブまでのインピーダンスが等しく設定される１つのスイッチとすることもできる。
【０１３６】
さらに、本発明における上記の各実施形態においては、各プラズマチャンバ９５，９６，９７のプラズマ励起電極４に対する電力周波数ｆ_ｅ と第１直列共振周波数ｆ_０ とを設定したが、サセプタ電極側８に対する周波数を設定するよう対応することも可能である。この場合、図１１にＰＲ’で示すように、インピーダンス測定範囲を規定する整合回路２５の出力端子位置を設定することができる。
さらに、平行平板型の電極４，８を有するタイプに変えて、ＩＣＰ（ｉｎｄｕｃｔｉｖｅ ｃｏｕｐｌｅｄ ｐｌａｓｍａ）誘導結合プラズマ励起型、ＲＬＳＡ（ｒａｄｉａｌ ｌｉｎｅ ｓｌｏｔ ａｎｔｅｎｎａ）ラジアルラインスロットアンテナ型などのプラズマ処理装置や、ＲＩＥ（Ｒｉａｃｔｉｖｅ Ｉｏｎ Ｅｔｃｈｉｎｇ）反応性スパッタエッチング用の処理装置に適用することもできる。
【０１３７】
なお、上記の各実施形態においては、図１６に示すように、プラズマチャンバ（プラズマ処理室ユニット）９５，９６，９７に対応して、整合回路２Ａと、高周波電源１とが、それぞれ設けられて、プラズマチャンバ９５，９６，９７における整合回路２Ａの接続位置に、ＳＷ４を介してインピーダンス測定器ＡＮを接続したが、図１７に示すように、個々のプラズマチャンバ９５，９６，９７に対する整合回路２Ａ，２Ａ，２Ａが、スイッチ切り替えによって同一の高周波電源１に接続される構成や、図１８に示すように、個々のプラズマチャンバ９５，９６，９７が、スイッチ切り替えによって同一の整合回路２Ａに接続される構成も可能である。この場合、図１７に示すように、プラズマチャンバ９５，９６，９７と整合回路２Ａとの接続位置に、ＳＷ４を介してインピーダンス測定器ＡＮが接続される。
【０１３８】
また、上記の各実施形態においては、高周波特性Ａとして第１直列共振周波数ｆ_０ に対する設定を上記式（１０）の様におこなったが、これ以外にも、高周波特性Ａとして、共振周波数ｆ、前記高周波電力の周波数におけるインピーダンスＺ、前記高周波電力の周波数におけるレジスタンスＲ、または、前記高周波電力の周波数におけるリアクタンスＸのいずれかを採用し、前記式（１０Ａ）のように設定することができる。これにより、それぞれの特性を指標とする一定の管理幅内に複数のプラズマチャンバ９５，９６，９７設定することが可能となるので、電気的高周波的な特性の機差をなくすことが可能となり、個々のプラズマチャンバ９５，９６，９７において、プラズマ空間で消費される実効的な電力をそれぞれ略均一にすることができる。
ここで、前記高周波特性Ａとして、インピーダンスＺを採用した場合には、このインピーダンスＺは、プラズマ励起する周波数における値であるから、Ｚとθとの周波数依存性を測定してはじめて把握可能なパラメータである共振周波数ｆに対して、プラズマチャンバ９５，９６，９７の高周波数特性の周波数依存性を見る必要がなく、共振周波数ｆに比べて把握が容易である。また、プラズマチャンバ９５，９６，９７のプラズマ励起する周波数における電気的高周波数的特性をより直接的に捉えることができる。
また、レジスタンスＲ、および、リアクタンスＸ、を採用した場合には、これらレジスタンスＲとリアクタンスＸとのベクトル量であるインピーダンスＺを見ることに比べて、さらに直接的にプラズマチャンバのプラズマ励起する周波数における電気的高周波数的特性を捉えることができる。
【０１３９】
以下、本発明に係るプラズマ処理装置，プラズマ処理システムおよびこれらの検査方法の第４実施形態を、図面に基づいて説明する。
［第４実施形態］
図２３は本実施形態のプラズマ処理ユニット（プラズマチャンバ）の概略構成を示す断面図である。
なお、本実施形態において第１ないし第３実施形態と異なるのは、周波数特性の測定範囲に関する点および、測定用端子、スイッチに関する点、および、プラズマ処理室ユニット（プラズマチャンバ）の部分のみであり、プラズマ処理装置としての構成、または、プラズマ処理システムとしての構成に関しては第１ないし第３実施形態に準ずるものとされる。また、これ以外の第１ないし第３実施形態と略同等の構成要素に関しては同一の符号を付してその説明を省略する。
【０１４０】
本実施形態においては、プラズマチャンバの構成として第２実施形態と同様の２周波数励起タイプとされるとともに、図２３にＰＲ３で示すように、高周波数特性Ａを測定する測定範囲を規定する測定位置が、各プラズマチャンバ７５，７６，７７，９５，９６，９７において、高周波電力を供給する際に高周波電力供給電体（給電線）１Ａを介して高周波電源１に接続される整合回路２Ａの入力端子位置に設定される。この入力端位置ＰＲ３には、プラズマチャンバの高周波数特性Ａを測定するための測定用端子６１と、この測定用端子６１と高周波数特性測定器とを接続する同軸ケーブルとされる接続線６１Ａと、高周波数特性測定時および、プラズマ発生時に、プラズマチャンバに対する接続を給電線１Ａと高周波特性測定器（インピーダンス測定器）ＡＮとの間で切り替えるスイッチＳＷ５とが接続される。
ここで、スイッチＳＷ５で切り替えられる測定位置ＰＲ３から給電線１Ａを介して高周波電源１４までのインピーダンスと、測定位置ＰＲ３から給電線１Ａを介して高周波電源１４までのインピーダンスとがそれぞれ等しく設定されている。具体的には、給電線１Ａと接続線６１Ａとの長さが等しく設定されている。これにより、第２実施形態と同様に、プラズマチャンバと高周波特性測定器ＡＮとの接続を着脱することなく、スイッチＳＷ５切り替えのみにより、インピーダンスなどの測定による高周波特性Ａ、特に第１直列共振周波数ｆ_０ の測定を容易におこなうことが可能となる。
【０１４１】
ここで、本実施形態のプラズマチャンバにおける高周波特性Ａとしての第１直列共振周波数ｆ_０ は、第１ないし第３実施形態と同様にして測定・定義する。本実施形態の第１直列共振周波数ｆ_０ は、具体的には図２４，図２５に示すように測定・定義される。
図２４は図２３における本実施形態のプラズマチャンバのインピーダンス特性を説明するための模式図である。図２５は図２４の本実施形態のプラズマチャンバのインピーダンス特性測定用の等価回路を示す回路図である。
【０１４２】
本実施形態においては、測定される高周波数特性Ａのうち第１直列共振周波数ｆ_０ に対して、考慮されている電気的高周波的要因は、図２４に示すように、上記測定範囲のうち、以下のものが考えられる。
接続線６１Ａからの寄与
スイッチＳＷ５のインダクタンスＬ_ＳＷおよび抵抗Ｒ_ＳＷ
整合回路２Ａからの寄与
給電板（フィーダ）３のインダクタンスＬ_ｆ および抵抗Ｒ_ｆ
プラズマ励起電極４とサセプタ電極８との間のプラズマ電極容量Ｃ_ｅ
サセプタ電極８とサセプタシールド１２との間の容量Ｃ_Ｓ
サセプタシールド１２の支持筒１２ＢのインダクタンスＬ_Ｃ および抵抗Ｒ_Ｃ
ベローズ１１のインダクタンスＬ_Ｂ および抵抗Ｒ_Ｂ
チャンバ壁１０のインダクタンスＬ_Ａ および抵抗Ｒ_Ａ
絶縁体１７ａを挟んだガス導入管１７とプラズマ励起電極４との間の容量Ｃ_Ａ
プラズマ励起電極４とシャーシ２１との間の容量Ｃ_Ｂ
プラズマ励起電極４とチャンバ壁１０との間の容量Ｃ_Ｃ
【０１４３】
これらの電気的高周波的要因が、プラズマ発光時に供給される高周波電流が流れる回路と同様と見なせる状態として、図２５に示すように、接続線６１Ａからの寄与、スイッチＳＷ２のインダクタンスＬ_ＳＷおよび抵抗Ｒ_ＳＷ、整合回路２Ａからの寄与、給電板（フィーダ）３のインダクタンスＬ_ｆ および抵抗Ｒ_ｆ 、プラズマ励起電極４とサセプタ電極８との間のプラズマ電極容量Ｃ_ｅ 、サセプタ電極８とサセプタシールド１２との間の容量Ｃ_Ｓ 、サセプタシールド１２の支持筒１２ＢのインダクタンスＬ_Ｃ および抵抗Ｒ_Ｃ 、ベローズ１１のインダクタンスＬ_Ｂ および抵抗Ｒ_Ｂ 、チャンバ壁１０のインダクタンスＬ_Ａ および抵抗Ｒ_Ａ 、が順に直列に接続されてその終端の抵抗Ｒ_Ａ がアースされるとともに、抵抗Ｒ_ｆ とプラズマ電極容量Ｃ_ｅ との間に一端がアースされた状態でそれぞれ並列に接続された容量Ｃ_Ａ ，容量Ｃ_Ｂ ，容量Ｃ_Ｃ が、等価回路を形成しており、この等価回路のインピーダンス特性を計測することで、本実施形態の第１直列共振周波数ｆ_０ を定義することができる。
【０１４４】
このように定義された第１直列共振周波数ｆ_０ を、前述した第１ないし第３実施形態と同様に設定する。そしで、各プラズマチャンバに対する第１直列共振周波数ｆ_０５，ｆ_０６のうち、その最大値ｆ_０ｍａｘと最小値ｆ_０ｍｉｎに対して、前述の式（１０）のように複数のプラズマチャンバの第１直列共振周波数ｆ_０ のばらつきとして定義し、この値を０．０３より小さい範囲の値に設定する。この際、１直列共振周波数ｆ_０ のばらつきを設定する方法としては、前述の▲１▼〜▲４▼等のような手法を適用することができるとともに、これに加え、例えば
▲５▼特性のそろったロードコンデンサ２２を選択する
▲６▼特性のそろったチューニングコンデンサ２４を選択する
▲７▼チューニングコイル２３の形状（太さ、まき数、長さ）を調整する
等の手法を適用することができる。
【０１４５】
本実施形態のプラズマ処理装置またはプラズマ処理システムおよびその検査方法においては、第１ないし第３実施形態と同等の効果を奏するとともに、測定範囲に整合回路２Ａを含めない場合に比べて、プラズマ処理室６０だけでなく、整合回路２Ａも含めて複数のプラズマチャンバ７５，７６，７７，９５，９６，９７に対し、電気的高周波的な特性の機差をなくすことが可能となり、個々のプラズマチャンバ７５，７６，７７，９５，９６，９７においてプラズマ空間で消費される実効的な電力の略均一性を高めることができ、これに同一のプロセスレシピを適用して、測定範囲に整合回路２Ａを含めない場合に比べて、略同一性の高いプラズマ処理結果を得ることができる。
【０１４６】
さらに、本実施形態においては、給電線１Ａの長さと接続線６１Ａの長さとが等しく設定されているため、スイッチＳＷ５により、測定位置ＰＲ３と高周波測定器ＡＮとの電気的接続を切るとともに整合回路２Ａ側と高周波電源１側との電気的接続を確保した場合における高周波電源１出力端子位置ＰＲ２からプラズマチャンバ側を測定範囲とした際の高周波特性Ａと、スイッチＳＷ５により、測定位置ＰＲ３と高周波測定器ＡＮとの電気的接続を確保するとともに高周波電源１側と整合回路２Ａとの電気的接続を切断した場合における高周波測定器ＡＮの出力端子位置で測定したプラズマチャンバの高周波特性Ａと、が等しく設定されている。
従って、本実施形態においては、図２３、図２４，図２５に示すように、前記高周波電力を供給する際に前記高周波電源１に接続される高周波電力給電体（給電線）１Ａの高周波電源１側端部とされる測定位置ＰＲ２で、プラズマチャンバのそれぞれの高周波特性Ａを測定した場合と同等の高周波特性を測定することが可能である。このように測定範囲を設定することにより、測定範囲に整合回路２Ａ，高周波電力給電体１Ａを含めない場合に比べて、プラズマ処理室６０だけでなく、整合回路２Ａ，高周波電力給電体（給電線）１Ａも含めて複数のプラズマチャンバ７５，７６，７７，９５，９６，９７に対し、電気的高周波的な特性の機差をなくすことが可能となり、個々のプラズマチャンバ７５，７６，７７，９５，９６，９７においてプラズマ空間で消費される実効的な電力の略均一性をさらに高めることができ、これに同一のプロセスレシピを適用して、測定範囲に整合回路２Ａ，高周波電力給電体（給電線）１Ａを含めない場合に比べて、さらに略同一性の高いプラズマ処理結果を得ることができる。
【０１４７】
なお、図２、図１１に示すように、上記の第１ないし第３実施形態においても、本実施形態のように測定範囲を測定位置ＰＲ３よりチャンバ室６０側、および、測定位置ＰＲ２よりチャンバ室６０側として設定することが可能である。
【０１４８】
以下、本発明に係るプラズマ処理装置またはプラズマ処理システムの性能確認システムの他の実施形態を、図面に基づいて説明する。なお、以下の説明では、購入発注者を単に発注者、また販売保守者を単に保守者という。
図２６は本実施形態のプラズマ処理装置またはプラズマ処理システムの性能確認システムのシステム構成図である。
【０１４９】
この図において、参照符号Ｃ１ ，Ｃ２ ，……はクライアント・コンピュータ（以下、単にクライアントという）、Ｓはサーバ・コンピュータ（性能状況情報提供手段，以下単にサーバという）、Ｄはデータベース・コンピュータ（基準情報記憶手段，以下単にデータベースという）、またＮは公衆回線である。クライアントＣ１ ，Ｃ２ ，……とサーバＳとデータベースＤとは、この図に示すように公衆回線Ｎを介して相互に接続されている。
【０１５０】
クライアントＣ１ ，Ｃ２ ，……は、一般に広く普及しているインターネットの通信プロトコル（ＴＣＰ／ＩＰ等）を用いてサーバＳと通信する機能（通信機能）を備えたものである。このうち、クライアントＣ１ （発注者側情報端末）は、発注者が保守者に発注したプラズマ処理装置またはプラズマ処理システムのプラズマチャンバの性能状況を公衆回線Ｎを介して確認するためのコンピュータであり、サーバＳが保持する「プラズマチャンバの性能情報提供ページ」を情報提供ページ（Ｗｅｂページ）として閲覧する機能（プラズマチャンバの性能状況情報閲覧機能）を備えたものである。また、クライアントＣ２ （保守者側情報端末）は、保守者が上記「性能状況情報」の一部である「第１直列共振周波数ｆ_０ 情報」をサーバＳにアップロードするとともに、クライアントＣ１ を介して発注者から発せられた電子メールを受信するためのものである。
ここで、プラズマ処理装置またはプラズマ処理システムは、上記の第１〜第４実施形態に準じる構成とされ、これらと同様のプラズマ処理ユニット（プラズマチャンバ）を有する構成とされるとともに、チャンバ数等の構成条件は、任意に設定可能なものとされる。
【０１５１】
上記サーバＳの通信機能は、公衆回線Ｎがアナログ回線の場合にはモデムによって実現され、公衆回線ＮがＩＳＤＮ（Ｉｎｔｅｇｒａｔｅｄ Ｓｅｒｖｉｃｅｓ Ｄｉｇｉｔａｌ Ｎｅｔｗｏｒｋ）等のデジタル回線の場合には専用ターミナルアダプタ等によって実現される。サーバＳは、性能状況情報提供用のコンピュータであり、上記クライアントＣ１ から受信される閲覧要求に応じて、性能状況情報をインターネットの通信プロトコルを用いてクライアントＣ１ に送信する。ここで、上述した発注者が保守者からプラズマ処理装置を納入された時点では、性能状況情報を閲覧するための個別の「閲覧専用パスワード」が保守者から個々の発注者に提供されるようになっている。このサーバＳは、正規な閲覧専用パスワードが提供された場合のみ、性能状況情報のうち動作保守状況情報をクライアントＣ１ に送信するように構成されている。
【０１５２】
ここで、具体的詳細については後述するが、上記「性能状況情報」は、保守者の販売するプラズマ処理装置またはプラズマ処理システムにおけるプラズマチャンバの機種に関する情報、各機種における仕様書としての品質性能情報、納入された各実機における品質性能を示すパラメータの情報、および、このパラメータ、メンテナンスの履歴情報等から構成されている。
このうち、各実機における品質性能、パラメータ、メンテナンスの履歴情報については、「閲覧専用パスワード」が提供された発注者のみに閲覧可能となっている。
【０１５３】
また、これら「性能状況情報」は、保守者または発注者からサーバＳに提供されるとともに実際の動作・保守状況を示す「動作保守状況情報」と、データベースＤに蓄積されると共にカタログとして未購入のクライアントが閲覧可能な「性能基準情報」とから構成されるものである。「性能基準情報」は、保守者が各プラズマチャンバによっておこなうプラズマ処理に対して客観的に性能を記述するためのものであり、プラズマＣＶＤ、スパッタリングなどの成膜処理においては、成膜状態を予測可能とするものである。
【０１５４】
本実施形態では、これら「性能基準情報」は、データベースＤに蓄積されるようになっている。
サーバＳは、クライアントＣ１ から受信される「性能状況情報」の閲覧要求に対して、データベースＤを検索することにより必要な「性能基準情報」を取得して、「性能状況情報提供ページ」として発注者のクライアントＣ１ に送信するように構成されている。また、サーバＳは、「閲覧専用パスワード」が提供された発注者から受信される「性能状況情報」の閲覧要求に対しては、同様に、データベースＤを検索することにより必要な「性能基準情報」を取得するとともに、当該「性能基準情報」にクライアントＣ２ を介して保守者から提供された「動作保守状況情報」を組み合わせて「性能状況情報」を構成し、「性能状況情報提供ページ」として発注者のクライアントＣ１ に送信するように構成されている。
【０１５５】
データベースＤは、このような「性能状況情報」を構成する「性能基準情報」をプラズマ処理装置またはプラズマ処理システムのプラズマチャンバの機種毎に記憶蓄積するものであり、サーバＳから受信される検索要求に応じてこれら「性能基準情報」を読み出してサーバＳに転送する。図２６では１つのサーバＳのみを示しているが、本実施形態では、汎用性のある「性能基準情報」を保守者が複数箇所から管理する複数のサーバ間で共通利用することが可能なように、これらサーバとは個別のデータベースＤに「性能基準情報」を蓄積するようにしている。
【０１５６】
次に、このように構成されたプラズマ処理装置またはプラズマ処理システムの性能確認システムの動作について、図２７に示すフローチャートに沿って詳しく説明する。なお、このフローチャートは、上記サーバＳにおける「性能状況情報」の提供処理を示すものである。
【０１５７】
通常、保守者は、不特定の発注者に対して販売するプラズマ処理装置またはプラズマ処理システムにおける各プラズマチャンバの「性能状況情報」、特に「性能基準情報」を購入時の指標として提示することになる。一方、発注者は、この「性能基準情報」によってプラズマチャンバＣＮにどのような性能、つまりどのようなプラズマ処理が可能なのかを把握することができる。
【０１５８】
また、保守者は、特定の発注者に対して納入したプラズマ処理装置またはプラズマ処理システムにおけるプラズマチャンバの「性能状況情報」のうち、「性能基準情報」を使用時の指標として提示するとともに、「動作保守状況情報」を動作状態のパラメータとして提示することになる。一方、ユーザーとしての発注者は、「性能基準情報」と「動作保守状況情報」とを比較することによってプラズマ処理装置またはプラズマ処理システムにおける各プラズマチャンバの動作確認をおこなうとともにメンテナンスの必要性を認識し、かつ、プラズマ処理状態の状態を把握することができる。
【０１５９】
例えば、プラズマ処理装置またはプラズマ処理システムを保守者から購入しようとする発注者は、サーバＳにアクセスすることにより、以下のようにして自らが購入しようとするプラズマ処理装置またはプラズマ処理システムの「性能状況情報」の実体を容易に確認することができる。
【０１６０】
まず、発注者がアクセスしようとした場合には、予め設定されたサーバＳのＩＰアドレスに基づいてクライアントＣ１ からサーバＳに表示要求が送信される。一方、サーバＳは、上記表示要求の受信を受信すると（ステップＳ１）、カタログページＣＰをクライアントＣ１ に送信する（ステップＳ２）。
図２８は、このようにしてサーバＳからクライアントＣ１ に送信されたメインページＣＰの一例である。このカタログページＣＰには、保守者が販売する多数の機種毎にその「性能状況情報」のうち「性能基準情報」を表示するための機種選択ボタンＫ１，Ｋ２，Ｋ３，Ｋ４…、と、後述するように、プラズマ処理装置またはプラズマ処理システムを保守者から納入された発注者の使用するカスタマーユーザ画面の表示要求をするためのカスタマーユーザボタンＫ４から構成されている。
【０１６１】
例えば、発注者がクライアントＣ１ に備えられたポインティングデバイス（例えばマウス）等を用いることによって上記プラズマ処理装置またはプラズマ処理システムの機種を選択指定した後、機種選択ボタンＫ１〜Ｋ４…のいずれかを選択指定すると、この指示は、「性能状況情報」のうち「性能基準情報」の表示要求としてサーバＳに送信される。
【０１６２】
この表示要求を受信すると（ステップＳ３）、サーバＳは、選択された機種のうち、表示要求された情報に該当するサブページをクライアントＣ１ に送信する。すなわち、サーバＳは、「性能基準情報」の表示が要求された場合（Ａ）、図２９に示すような選択された機種を指定することによってデータベースＤから「真空性能」「給排気性能」「温度性能」「プラズマ処理室電気性能」等のデータ、およびこれらのデータにおけるプラズマ処理装置またはプラズマ処理システム毎の、各パラメータのばらつきの値のデータを取得し、これらの掲載された仕様書ページＣＰ１をクライアントＣ１ に送信する（ステップＳ４）。
【０１６３】
仕様書ページＣＰ１には、図２９に示すように、選択された機種を示す機種種別Ｋ６、真空性能表示欄Ｋ７、給排気性能表示欄Ｋ８、温度性能表示欄Ｋ９、プラズマ処理室電気性能表示欄Ｋ１０から構成されている。これらは、選択された機種のプラズマチャンバにおける「性能基準情報」に対応するものであり、それぞれ、
真空性能表示欄Ｋ７には、
到達真空度 １×１０^−４Ｐａ以下
操作圧力 ３０〜３００Ｐａ
給排気性能表示欄Ｋ８には、

温度性能表示欄Ｋ９には、
ヒータ設定温度 ２００〜３５０±１０℃
チャンバ設定温度 ６０〜８０±２．０℃
の項目が記載されている。
ここで、ＳＣＣＭ（ｓｔａｎｄａｒｄ ｃｕｂｉｃ ｃｅｎｔｉｍｅｔｅｒｓ ｐｅｒ ｍｉｎｕｔｅ） は、標準状態（０℃、１０１３ｈＰａ）に換算した際におけるガス流量を表しており、ｃｍ^３／ｍｉｎ に等しい単位を表している。
【０１６４】
そしてこれらのパラメータＰに対して、それぞれのプラズマ処理装置またはプラズマ処理システムにおける各プラズマチャンバ毎のばらつきを、それぞれのパラメータＰのうちその最大値Ｐ_ｍａｘ と最小値Ｐ_ｍｉｎ のばらつきを、以下の式（１０Ｂ）
（Ｐ_ｍａｘ −Ｐ_ｍｉｎ ）／（Ｐ_ｍａｘ ＋Ｐ_ｍｉｎ ） （１０Ｂ）
として定義し、これらのばらつきの値の各プラズマ処理装置またはプラズマ処理システムにおける設定範囲をそれぞれのパラメータの項目に対して表示する。
【０１６５】
また、プラズマ処理室電気性能表示欄Ｋ１０には、前述した第１〜第４実施形態で説明した第１直列共振周波数ｆ_０ の値、および、この設定範囲と電力周波数ｆ_ｅ との関係が記載される。また、これ以外にも、電力周波数ｆ_ｅ におけるプラズマチャンバのレジスタンスＲおよびリアクタンスＸ、そして、プラズマ励起電極４とサセプタ電極８間のプラズマ容量Ｃ_０ プラズマ励起電極４と、プラズマチャンバの接地電位とされる各部との間のロス容量Ｃ_Ｘ 等の値が記載される。また、仕様書ページＣＰ１には、「プラズマ処理装置またはプラズマ処理システムの納入時においては各パラメータ値がこのページに記載された設定範囲内にあることを保証します」という性能保証の文言が記載される。
【０１６６】
これにより、従来は、考慮されていなかったプラズマ処理装置またはプラズマ処理システムの全体的な電気的高周波的な特性およびプラズマチャンバの電気的特性のばらつきを購入時の新たなる指標として提示することができる。また、クライアントＣ１ またはクライアントＣ２ において、これら性能状況情報をプリンタ等に出力しハードコピーを作ることにより、上記の性能状況情報内容の記載されたカタログまたは仕様書として出力することが可能である。さらに、第１直列共振周波数ｆ_０ 、レジスタンスＲ、アクタンスＸ、容量Ｃ_０ ，Ｃ_Ｘ 等の値および上記性能保証の文言をクライアントＣ１ …の端末、カタログまたは仕様書等に提示することにより、発注者が、電機部品を吟味するようにプラズマチャンバＣＮの性能を判断して保守者から購入することが可能となる。
【０１６７】
なお、サーバＳは、このようなサブページのクライアントＣ１ への送信が完了した後に、クライアントＣ１ から接続解除要求が受信されない場合は（ステップＳ５）、次のサブページの表示要求を待って待機し（ステップＳ３）、一方、クライアントＣ１ から接続解除要求が受信された場合には（ステップＳ５）、当該クライアントＣ１ との交信を終了する。
【０１６８】
また、プラズマ処理装置またはプラズマ処理システムを保守者から納入した発注者は、サーバＳにアクセスすることにより、以下のようにして自らが購入したプラズマ処理装置またはプラズマ処理システムにおけるプラズマチャンバの「性能状況情報」の実体を容易に確認することができる。
この発注者は保守者と売買契約を締結した時点で、発注者個別に対応するとともに、購入したプラズマ処理装置またはプラズマ処理システムの機種番号、およびそれぞれのプラズマチャンバの機種番号にも対応可能なカスタマーユーザＩＤと、プラズマ処理装置またはプラズマ処理システムおよびその各プラズマチャンバの「動作保守状況情報」を閲覧するための個別の「ユーザー専用パスワード（閲覧専用パスワード）」が保守者から個々の発注者に提供されるようになっている。このサーバＳは、正規な閲覧専用パスワードが提供された場合のみ、「動作保守状況情報」をクライアントＣ１ に送信するように構成されている。
【０１６９】
まず、発注者がアクセスしようとした場合には、前述のカタログページＣＰにおいて、カスタマーユーザボタンＫ５を指定操作することにより、発注者はカスタマーユーザ画面の表示要求をサーバＳに送信する。
一方、サーバＳは、上記表示要求の受信を受信すると（ステップＳ３−Ｂ）、当該発注者に対して、「閲覧専用パスワード」の入力を促す入力要求としてのサブページをクライアントＣ１ に送信する（ステップＳ６）。図３０はカスタマーユーザページＣＰ２を示すものであり、このカスタマーユーザページＣＰ２はカスタマーユーザＩＤ入力欄Ｋ１１、およびパスワード入力欄Ｋ１２から構成される。
【０１７０】
この入力要求としてのカスタマーユーザページＣＰ２はクライアントＣ１ に表示されるので、発注者は、当該入力要求に応答してプラズマ処理装置またはプラズマ処理システムおよびその各プラズマチャンバの識別を可能とするために、保守者から供与された「閲覧専用パスワード」を「カスタマーユーザＩＤ」とともにクライアントＣ１ に入力することになる。
ここで、発注者は、図３０に示すカスタマーユーザＩＤ入力欄Ｋ１１およびパスワード入力欄Ｋ１２に、それぞれ、カスタマーコードＩＤとパスワードを入力する。サーバＳは、クライアントＣ１から正規の「カスタマーユーザＩＤ」および「閲覧専用パスワード」が受信された場合のみ（ステップＳ７）、当該「閲覧専用パスワード」に予め関連付けられた「動作保守状況情報」のサブページをクライアントＣ１ に送信する（ステップＳ９）。
【０１７１】
すなわち、「動作保守状況情報」の閲覧は、上記プラズマ処理装置またはプラズマ処理システムの購入契約を締結した特定の発注者のみ、つまり正規の「閲覧専用パスワード」を知り得るもののみに許可されるようになっており、当該発注者以外の第３者がサーバＳにアクセスしても「動作保守状況情報」を閲覧することができない。通常、保守者は同時に多数の発注者との間で納入契約を締結するとともに、各々の発注者へ複数のプラズマ処理装置またはプラズマ処理システムの納入を同時に並行して行う場合があるが、上記「閲覧専用パスワード」は、個々の発注者毎および各プラズマ処理装置またはプラズマ処理システムおよびその各プラズマチャンバ毎に相違するものが提供されるので、個々の発注者は、各プラズマ処理装置またはプラズマ処理システムおよびその各プラズマチャンバに対して、それぞれ自らに提供された「閲覧専用パスワード」に関連付けられた「動作保守状況情報」を個別に閲覧することができる。
【０１７２】
したがって、納入に係わる秘密情報が発注者相互間で漏洩することを確実に防止することができるとともに、複数のプラズマ処理装置またはプラズマ処理システムが納入された場合にでもそれぞれのプラズマ処理装置またはプラズマ処理システムおよびその各プラズマチャンバを個別に識別可能とすることができる。なお、サーバＳは、正規の「閲覧専用パスワード」が受信されない場合には（ステップＳ７）、接続不許可メッセージをクライアントＣ１ に送信して（ステップＳ８）、発注者に「閲覧専用パスワード」を再度入力するように促す。発注者が「閲覧専用パスワード」を誤入力した場合には、この機会に正規の入力を行うことにより「動作保守状況情報」を閲覧することができる。
【０１７３】
このＩＤ、パスワードが確認されると（ステップＳ７）、サーバＳは、表示要求された情報に該当するサブページをデータベースＤから読み出してクライアントＣ１ に送信する。すなわち、サーバＳは、ユーザＩＤによって識別された個別のプラズマ処理装置またはプラズマ処理システムおよびその各プラズマチャンバに対する「性能基準情報」「動作保守状況情報」の表示が要求された場合、機種を指定することによってデータベースＤから「真空性能」「給排気性能」「温度性能」「プラズマ処理室電気性能」等のデータを取得し、これらの掲載された仕様書ページＣＰ３をクライアントＣ１ に送信する（ステップＳ９）。
【０１７４】
図３１は、このようにしてサーバＳからクライアントＣ１ に送信された「動作保守状況情報」のサブページＣＰ３である。このメンテナンス履歴ページＣＰ３には、図３１に示すように、納入されたプラズマ処理装置またはプラズマ処理システムおよびその各プラズマチャンバの機械番号を示すロット番号表示Ｋ１３、真空性能表示欄Ｋ７、給排気性能表示欄Ｋ８、温度性能表示欄Ｋ９、プラズマ処理室電気性能表示欄Ｋ１０、そして、真空性能メンテナンス欄Ｋ１４、給排気性能メンテナンス欄Ｋ１５、温度性能メンテナンス欄Ｋ１６、プラズマ処理室電気性能メンテナンス欄Ｋ１７から構成されている。これらは、納入された実機の「動性能基準情報」および「動作保守状況情報」に対応するものであり、それぞれ、
真空性能表示欄Ｋ７、真空性能メンテナンス欄Ｋ１４には、
到達真空度 １．３×１０^−５Ｐａ以下
操作圧力 ２００Ｐａ
給排気性能表示欄Ｋ８、給排気性能メンテナンス欄Ｋ１５には、

温度性能表示欄Ｋ９、温度性能メンテナンス欄Ｋ１６には、
ヒータ設定温度 ３０２．３±４．９℃
チャンバ設定温度 ８０．１±２．１℃
の項目が記載されている。
【０１７５】
そしてこれらのパラメータＰに対して、それぞれのプラズマ処理装置またはプラズマ処理システムにおける各プラズマチャンバ毎のばらつきを、それぞれのパラメータＰのうちその最大値Ｐ_ｍａｘ と最小値Ｐ_ｍｉｎ のばらつきを、以下の式（１０Ｂ）
（Ｐ_ｍａｘ −Ｐ_ｍｉｎ ）／（Ｐ_ｍａｘ ＋Ｐ_ｍｉｎ ） （１０Ｂ）
として定義し、これらのばらつきの値の各プラズマ処理装置またはプラズマ処理システムにおける設定範囲をそれぞれのパラメータの項目に対して表示する。
【０１７６】
さらに、このサブページＣＰ３には、各プラズマチャンバ毎のメンテナンス欄を表示するための「詳細」ボタンＫ１８が各メンテナンス履歴欄Ｋ１４，Ｋ１５，Ｋ１６，Ｋ１７ごとに設けられ、発注者が、当該情報を閲覧可能となっている。
【０１７７】
発注者が、当該詳細欄により表示要求をおこなった場合には、メンテナンス履歴の詳細情報の記載されたメンテナンス詳細ページＣＰ４がデータベースＤからクライアントＣ１ に送信する。
【０１７８】
図３２は、このようにしてサーバＳからクライアントＣ１ に送信された「詳細メンテナンス情報」のサブページＣＰ４である。
図には電気性能メンテナンスのページを示している。
このメンテナンス履歴ページＣＰ３には、図３２に示すように、納入されたプラズマ処理装置またはプラズマ処理システムおよびその各プラズマチャンバの機械番号を示すロット番号表示Ｋ１３、選択された各メンテナンス欄が表示される。ここで、各メンテナンス欄としては、各プラズマチャンバに対応するパラメータＰのメンテナンス時の値と、これらのパラメータＰのばらつきの値とが、プラズマ処理装置またはプラズマ処理システム、および、各プラズマチャンバ毎のロット番号毎に表示される。
【０１７９】
また、プラズマ処理室電気性能表示欄Ｋ１０およびプラズマ処理室電気性能メンテナンス欄Ｋ１７には、前述した第１〜第４実施形態で説明したように、第１直列共振周波数ｆ_０ の値、および、この設定範囲と電力周波数ｆ_ｅ との関係が記載される。また、これ以外にも、電力周波数ｆ_ｅ におけるプラズマチャンバのレジスタンスＲおよびアクタンスＸ、そして、プラズマ励起電極４とサセプタ電極８間のプラズマ容量Ｃ_０ 、プラズマ励起電極４と、プラズマチャンバの接地電位とされる各部との間のロス容量Ｃ_Ｘ 等の値が記載される。
【０１８０】
同時に、データベースＤから「性能基準情報」としての「真空性能」「給排気性能」「温度性能」「プラズマ処理室電気性能」等のデータを取得し、これらを図３１，図３２に示すように、「動作保守状況情報」とセットでメンテナンス履歴ページＣＰ３、メンテナンス詳細ページＣＰ４に表示することにより、「性能基準情報」を参照して「動作保守状況情報」を閲覧することができ、これにより、発注者は、納入されたプラズマ処理装置またはプラズマ処理システムおよびプラズマチャンバの「性能状況情報」のうち、「性能基準情報」を使用時の指標として確認するとともに、「動作保守状況情報」を動作状態を示すパラメータとして検討することができる。同時に、「性能基準情報」と「動作保守状況情報」とを比較することによってプラズマ処理装置またはプラズマ処理システムおよびプラズマチャンバの動作確認をおこなうとともにメンテナンスの必要性を認識し、かつ、プラズマ処理状態の状態を把握することができる。
【０１８１】
なお、サーバＳは、このようなサブページＣＰ３、ＣＰ４のクライアントＣ１ への送信が完了した後に、クライアントＣ１ から接続解除要求が受信されない場合は（ステップＳ５）、接続不許可メッセージをクライアントＣ１ に送信して（ステップＳ８）、発注者に「閲覧専用パスワード」を再度入力するか、次のサブページの表示要求を待って待機し（ステップＳ３）、一方、クライアントＣ１ から接続解除要求が受信された場合には（ステップＳ５）、当該クライアントＣ１ との交信を終了する。
【０１８２】
本実施形態のプラズマ処理装置またはプラズマ処理システムの性能確認システムにおいて、購入発注者が販売保守者に発注したプラズマ処理装置またはプラズマ処理システムの動作性能状況を示す性能状況情報の閲覧を公衆回線を介して要求する購入発注者側情報端末と、販売保守者が前記性能状況情報をアップロードする販売保守者側情報端末と、前記購入発注者側情報端末の要求に応答して、販売保守者側情報端末からアップロードされた性能状況情報を購入発注者側情報端末に提供する性能状況情報提供手段と、を具備することができ、さらに、前記性能状況情報が、前記第１直列共振周波数ｆ_０ およびこのパラメータに対して、それぞれのプラズマ処理装置またはプラズマ処理システムにおける各プラズマチャンバ毎のばらつきの値を含むとともに、前記性能状況情報が、カタログまたは仕様書として出力されることにより、販売保守者がアップロードしたプラズマ処理装置またはプラズマ処理システムおよびそのプラズマチャンバの性能基準情報および動作保守状況情報からなる性能状況情報に対して、購入発注者が情報端末から公衆回線を介して閲覧を可能とすることにより、発注者に対して、購入時に判断基準となる情報を伝達することが可能となり、かつ、使用時における、プラズマ処理装置またはプラズマ処理システムおよびそのプラズマチャンバごとの動作性能・保守情報を容易に提供することが可能となる。
また、前記性能状況情報が、上述したようにプラズマチャンバに対する性能パラメータとしての前記第１直列共振周波数ｆ_０ およびそのばらつきの値を含むことにより、発注者のプラズマ処理装置またはプラズマ処理システムその各プラズマチャンバに対する性能判断材料を提供できるとともに、購入時における適切な判断をすることが可能となる。さらに、前記性能状況情報を、カタログまたは仕様書として出力することができる。
【０１８３】
［実施例］
本発明では、複数のプラズマチャンバにおいて、第１直列共振周波数ｆ_０ のばらつきの値を一定以内の値に設定することにより成膜時における膜特性の変化を測定した。
【０１８４】
ここで、実際に使用したプラズマ処理装置は、第２実施形態に示すように２つのプラズマチャンバを有し、これらのプラズマ処理室が２周波数励起タイプのものとされる。
使用したプラズマ処理装置としては、平行平板型の電極４，８のサイズが２５ｃｍ角とされ、これらの電極間隔が１５ｍｍに設定され、その電力が８００Ｗ、電力周波数ｆ_ｅ を４０．６８ＭＨｚに設定した。
【０１８５】
（実施例１）
上記のプラズマ処理装置において、実施例１として、プラズマチャンバに対する第１直列共振周波数ｆ_０ の最大値ｆ_０ｍａｘと最小値ｆ_０ｍｉｎに対するばらつきを、式（１０）に従って０．０９に設定する。同時に、これら第１直列共振周波数ｆ_０ の平均値を４３ＭＨｚに設定する。
（実施例２）
上記のプラズマ処理装置において、実施例２として、プラズマチャンバに対する第１直列共振周波数ｆ_０ の最大値ｆ_０ｍａｘと最小値ｆ_０ｍｉｎに対するばらつきを、式（１０）に従って０．０２に設定する。同時に、これら第１直列共振周波数ｆ_０ の平均値を４３ＭＨｚに設定する。
（比較例）
上記のプラズマ処理装置において、比較例１として、プラズマチャンバに対する第１直列共振周波数ｆ_０ の最大値ｆ_０ｍａｘと最小値ｆ_０ｍｉｎに対するばらつきを、式（１０）に従って０．１１に設定する。同時に、これら第１直列共振周波数ｆ_０ の平均値を４３ＭＨｚに設定する。
【０１８６】
上記の実施例１，２および比較例において、実施例および比較例に対する評価として同一のプロセスレシピを適用し、窒化珪素膜を堆積し、以下のように各プラズマ処理室に対する膜厚ばらつきを計測した。
▲１▼ガラス基板上にプラズマＣＶＤによりＳｉＮ_ｘ 膜を成膜する。
▲２▼フォトリソによりレジストのパターニングをおこなう。
▲３▼ＳＦ_６ とＯ_２ を用いてＳｉＮ_ｘ 膜をドライエッチングする。
▲４▼Ｏ_２ アッシングによりレジストを剥離する。
▲５▼ＳｉＮ_ｘ 膜の膜厚段差を触針式段差計により計測する。
▲６▼成膜時間と膜厚から堆積速度を算出する。
▲７▼膜面内均一性は、６インチガラス基板面内において１６ポイントで測定する。
【０１８７】
ここで、成膜時における条件は、
基板温度 ３５０℃
ＳｉＨ_４ ４０ｓｃｃｍ
ＮＨ_３ ２００ｓｃｃｍ
Ｎ_２ ６００ｓｃｃｍ
堆積速度 ほぼ２００ｎｍ／ｍｉｎ程度
である。
これらの結果を表１に示す。
【０１８８】
【表１】

【０１８９】
これらの結果から、第１直列共振周波数ｆ_０ のばらつきの値を設定した場合には、プラズマチャンバごとの機差による膜厚のばらつきが改善されていることがわかる。
つまり、第１直列共振周波数ｆ_０ の値を設定することにより、プラズマ処理装置の動作特性が向上している。
【０１９０】
【発明の効果】
本発明のプラズマ処理装置，プラズマ処理システムおよびこれらの性能確認システム，検査方法によれば、複数のプラズマ処理室ユニット（プラズマチャンバ）において高周波数特性として第１直列共振周波数ｆ_０ 等のばらつきの値を設定することにより、プラズマ処理室毎の機差をなくて同一のプロセスレシピによる略同一のプラズマ処理を得ることが可能になるとともに、プラズマ励起周波数の高周波化による処理速度、被処理基体面内方向におけるプラズマ処理の均一性、被成膜における膜特性、電力の消費効率、生産性の向上を図ることができ、適正な動作状態に簡便に維持可能なプラズマ処理装置およびプラズマ処理システムを提供することができるという効果、および、購入時における発注者のプラズマ処理装置またはプラズマ処理システムに対する性能判断材料を提供することが可能となり、さらに、前記性能状況情報を、カタログまたは仕様書として出力することができるという効果を奏する。
【図面の簡単な説明】
【図１】図１は、 本発明に係るプラズマ処理装置の第１実施形態を示す概略構成図である。
【図２】図２は、 図１におけるプラズマチャンバを示す断面図である。
【図３】図３は、 図２におけるプラズマチャンバの整合回路を示す模式図である。
【図４】図４は、 図１におけるプラズマチャンバのインピーダンス特性を説明するための模式図である。
【図５】図５は、 図４におけるプラズマチャンバの等価回路を示す回路図である。
【図６】図６は、 第１直列共振周波数ｆ_０ を説明するためのインピーダンスＺと位相θとの周波数依存特性を示すグラフである。
【図７】図７は、 本発明に係るプラズマ処理装置の第１実施形態におけるプラズマチャンバの第１直列共振周波数ｆ_０ およびインピーダンスＺと位相θとの周波数依存特性を示すグラフである。
【図８】図８は、 図１におけるレーザアニール室を示す縦断面図である。
【図９】図９は、 図１における熱処理室を示す縦断面図である。
【図１０】図１０は、 本発明に係るプラズマ処理装置の第２実施形態を示す概略構成図である。
【図１１】図１１は、 図１０におけるプラズマチャンバを示す断面図である。
【図１２】図１２は、 図１１におけるプラズマチャンバの等価回路を示す回路図である。
【図１３】図１３は、 本発明に係るプラズマ処理装置の第２実施形態における第１直列共振周波数ｆ_０ およびインピーダンスＺと位相θとの周波数依存特性を示すグラフである。
【図１４】図１４は、 プラズマ発光状態における電極間の状態を示す模式図である。
【図１５】図１５は、 本発明に係るプラズマ処理システムの第３実施形態を示す概略構成図である。
【図１６】図１６は、 本発明に係るプラズマ処理装置の他の実施形態を示す概略構成図である。
【図１７】図１７は、 本発明に係るプラズマ処理装置の他の実施形態を示す概略構成図である。
【図１８】図１８は、 本発明に係るプラズマ処理装置の他の実施形態を示す概略構成図である。
【図１９】図１９は、 インピーダンス測定器のプローブを示す斜視図である。
【図２０】図２０は、 図１９のインピーダンス測定器のプローブの接続状態を示す模式図である。
【図２１】図２１は、 従来のプラズマ処理装置の一例を示す模式図である。
【図２２】図２２は、 従来のプラズマ処理装置の他の例を示す模式図である。
【図２３】図２３は、 本発明に係るプラズマ処理システムの第４実施形態におけるプラズマ処理ユニット（プラズマチャンバ）の概略構成を示す断面図である。
【図２４】図２４は、 図２３におけるプラズマチャンバのインピーダンス特性を説明するための模式図である。
【図２５】図２５は、 図２４のプラズマチャンバのインピーダンス特性測定用の等価回路を示す回路図である。
【図２６】図２６は、 本発明のプラズマ処理装置の性能確認システムを示すシステム構成図である。
【図２７】図２７は、 本発明のプラズマ処理装置の性能確認システムに係わるサーバＳの性能状況情報の提供処理を示すフローチャートである。
【図２８】図２８は、 本発明のプラズマ処理装置の性能確認システムに係わるメインページＣＰの構成を示す平面図である。
【図２９】図２９は、 本発明のプラズマ処理装置の性能確認システムに係わるサブページＣＰ１の構成を示す平面図である。
【図３０】図３０は、 本発明のプラズマ処理装置の性能確認システムに係わるメインページＣＰ２の構成を示す平面図である。
【図３１】図３１は、 本発明のプラズマ処理装置の性能確認システムに係わるサブページＣＰ３の構成を示す平面図である。
【図３２】図３２は、 本発明のプラズマ処理装置の性能確認システムに係わるサブページＣＰ４の構成を示す平面図である。
【符号の説明】
１…高周波電源
１Ａ，２７Ａ…給電線
２，２６…マッチングボックス
２Ａ，２５…整合回路
３，２８…給電板
４…プラズマ励起電極（カソード電極）
５…シャワープレート
６…空間
７…孔
８…ウエハサセプタ（サセプタ電極）
９…絶縁体
１０…チャンバ壁
１０Ａ…チャンバ底部
１１…ベローズ
１２…サセプタシールド
１２Ａ…シールド支持板
１２Ｂ…支持筒
１３…シャフト
１６…基板（被処理基板）
１７…ガス導入管
１７ａ，１７ｂ…絶縁体
２１，２９…シャーシ
２２，３２…ロードコンデンサ
２３，３０…コイル
２４，３１…チューニングコンデンサ
２７…第２の高周波電源
６０…チャンバ室（プラズマ処理室）
６１…インピーダンス測定用端子（測定用端子）
７１，９１…プラズマ処理装置
７２，９２…搬送室
７３…ローダ室
７４…アンローダ室
７５、７６，７７，９５，９６，９７…プラズマチャンバ（プラズマ処理室ユニット）
７８…レーザアニール室
７９，９９…熱処理室
８０，８４…チャンバ
８１…レーザ光源
８２…ステージ
８３…レーザ光
８５…ヒータ
８６…ゲートバルブ
８７…基板搬送ロボット（搬送手段）
８８…アーム
９３…ロードロック室
１０５…プローブ
ＡＮ…インピーダンス測定器（高周波特性測定器）
Ｂ…分岐点
Ｐ…プラズマ発光領域
ＰＲ，ＰＲ’、ＰＲ２，ＰＲ３…出力端子位置
ＳＷ１，ＳＷ２，ＳＷ３，ＳＷ４、ＳＷ５…スイッチ
ｇ０，ｇ１，ｇ２，ｇ３，ｇ４…ゲート[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plasma processing apparatus, a plasma processing system, a performance confirmation system thereof, and an inspection method. In particular, the present invention has a plurality of plasma processing chambers and is capable of improving power consumption efficiency in response to higher-frequency power supply. The present invention relates to a technique suitable for improving film formation characteristics.
[0002]
[Prior art]
2. Description of the Related Art As an example of a plasma processing apparatus that performs plasma processing such as CVD (chemical vapor deposition), sputtering, dry etching, and ashing, a so-called two-frequency excitation type as shown in FIG. 21 is conventionally known.
In the plasma processing apparatus shown in FIG. 21, a matching circuit 2A is interposed between the high-frequency power supply 1 and the plasma excitation electrode 4. The matching circuit 2A is provided as a circuit for obtaining impedance matching between the high-frequency power supply 1 and the plasma excitation electrode 4.
[0003]
High frequency power from the high frequency power supply 1 is supplied to the plasma excitation electrode 4 by the power supply plate 3 through the matching circuit 2A. The matching circuit 2A is housed in a matching box 2 formed by a housing made of a conductor, and the plasma excitation electrode 4 and the power supply plate 3 are covered by a chassis 21 made of a conductor.
An annular projection 4a is provided below the plasma excitation electrode (cathode electrode) 4, and a shower plate 5 having a large number of holes 7 formed below the plasma excitation electrode (cathode electrode) 4. It is provided in contact with the protrusion 4a. A space 6 is formed between the plasma excitation electrode 4 and the shower plate 5. A gas introduction pipe 17 is connected to the space 6, and an insulator 17 a is inserted in the middle of the gas introduction pipe 17 made of a conductor to insulate the plasma excitation electrode 14 from the gas supply source.
[0004]
The gas introduced from the gas introduction pipe 17 is supplied into the chamber 60 formed by the chamber wall 10 through the hole 7 of the shower plate 5. Reference numeral 9 denotes an insulator that insulates the chamber wall 10 from the plasma excitation electrode (cathode electrode) 4. Illustration of the exhaust system is omitted.
On the other hand, a wafer susceptor (susceptor electrode) 8 on which the substrate 16 is placed and which also serves as a plasma excitation electrode is provided in the chamber 60, and a susceptor shield 12 is provided around the wafer susceptor.
[0005]
The susceptor shield 12 is composed of a shield support plate 12A for receiving the susceptor electrode 8 and a cylindrical support tube 12B hanging down from the center of the shield support plate 12A. The support tube 12B is provided through the chamber bottom 10A. The lower end of the support cylinder 12B and the chamber bottom 10A are hermetically connected by a bellows 11.
Wafer susceptor 8 and susceptor shield 12 are vacuum-insulated and electrically insulated by insulating means 12C made of an electric insulator provided around shaft 13. Further, the wafer susceptor 8 and the susceptor shield 12 can be moved up and down by the bellows 11, so that the distance between the plasma excitation electrodes 4 and 8 can be adjusted.
A second high frequency power supply 15 is connected to the wafer susceptor 8 via a shaft 13 and a matching circuit housed in a matching box 14. The chamber wall 10 and the susceptor shield 12 have the same DC potential.
[0006]
FIG. 22 shows another example of a conventional plasma processing apparatus. Unlike the plasma processing apparatus shown in FIG. 21, the plasma processing apparatus shown in FIG. 22 is a single-frequency excitation type plasma processing apparatus. That is, high-frequency power is supplied only to the cathode electrode 4, and the susceptor electrode 8 is grounded. The high-frequency power supply 15 and the matching box 14 shown in FIG. 21 are omitted. The susceptor electrode 8 and the chamber wall 10 have the same DC potential.
[0007]
In the above-described plasma processing apparatus, generally, power at a frequency of about 13.56 MHz is supplied to generate plasma between the electrodes 4 and 8, and the plasma is used to perform chemical vapor deposition (CVD), sputtering, and the like. Plasma processing such as dry etching and ashing is performed.
[0008]
As a method of confirming the operation of such a plasma processing apparatus and evaluating the operation, for example, a method of actually performing processing such as film formation and evaluating the film formation characteristics is performed as follows. I was
(1) Deposition rate and in-plane uniformity
(1) A desired film is formed on a substrate by plasma CVD.
{Circle around (2)} Patterning of the resist is performed.
(3) The film is dry-etched.
(4) The resist is removed by ashing.
{Circle around (5)} The film thickness step is measured by a stylus step meter.
{Circle around (6)} The deposition rate is calculated from the film formation time and the film thickness.
{Circle around (7)} In-film uniformity is measured at 16 points on the 6-inch substrate surface.
(2) BHF etching rate
The resist mask is patterned in the same manner as (1) (1) and (2).
(3) The substrate is immersed in the BHF solution for 1 minute.
(4) After washing with pure water and drying, the resist is washed with sulfuric acid and hydrogen peroxide (H₂SO₄+ H₂O₂). (5) The step is measured in the same manner as in (1) (5) above.
(6) The etching rate is calculated from the immersion time and the step.
(3) Isolation voltage
(1) A conductive film is formed on a glass substrate by sputtering, and is patterned as a lower electrode.
(2) An insulating film is formed by plasma CVD.
(3) An upper electrode is formed in the same manner as in (1).
(4) A contact hole is formed for the lower electrode.
(5) Probe the upper and lower electrodes and measure the IV characteristics (current-voltage characteristics). At this time, the maximum voltage is applied up to about 200V.
{Circle around (6)} The electrode area is 100 μm square, and 1 μA / cm crosses 100 pA.²  Therefore, V at this time is defined as the withstand voltage.
[0009]
Further, with respect to the plasma processing apparatus as described above, conventionally, when used in the production of semiconductors and liquid crystals, the plasma processing speed (deposition speed during film formation and processing speed) is high and the productivity is high; In recent years, excellent plasma processing uniformity (in-film direction distribution of film thickness and in-plane direction distribution of processing variations) in the in-plane direction of the substrate to be processed has recently been demanded for increasing the size of the substrate to be processed. Along with that, it is getting stronger. In addition, as the size of the substrate to be processed increases, the amount of power input also increases until a kW order is input, and the power consumption tends to increase. For this reason, it is desired that the development cost of the power supply increases with the increase in the capacity of the power supply, and that the running cost is reduced because the power consumption increases during the operation of the apparatus.
In addition, an increase in power consumption increases an emission of carbon dioxide, which is an environmental load. This is because, as the size of the substrate to be processed increases, the emission amount further increases, and the power consumption efficiency further decreases, so that the power consumption increases. Therefore, the demand for reducing the emission amount of carbon dioxide also increases. I have.
On the other hand, the density of the generated plasma is improved by increasing the frequency, such as using a VHF band frequency of 30 MHz or more, which is higher than the conventional general frequency of 13.56 MHz, as the plasma excitation frequency. Can be. As a result, it has been shown that a deposition apparatus such as a plasma CVD can improve the deposition rate during film formation.
[0010]
Further, with respect to a plasma processing apparatus having a plurality of plasma chambers as described above, for each plasma chamber, a difference in plasma processing is eliminated, and a plasma processing is performed even on a substrate to be processed in a different plasma chamber. We want to eliminate processing variations such as processing speed (deposition rate during film formation and processing speed), productivity, and plasma processing uniformity in the in-plane direction of the substrate to be processed (in-plane distribution of film thickness, etc.). There is a request.
At the same time, for a plasma processing apparatus having a plurality of plasma chambers, the same process recipe in which external parameters such as gas flow rate and pressure to be supplied, power supply, and processing time are equal to each plasma chamber is applied, It is desired that substantially the same plasma processing results can be obtained.
In addition, when installing a new plasma processing apparatus or performing adjustment / maintenance / inspection, adjustments required to eliminate machine differences among multiple plasma chambers, eliminate processing variations, and obtain substantially the same processing results with the same process recipe Along with a need for a reduction in time, a reduction in the cost required for such adjustment has been required.
[0011]
Further, with respect to a plasma processing system having a plurality of plasma processing apparatuses as described above, similarly, there is a demand for eliminating individual differences in plasma processing for individual plasma chambers in each plasma processing apparatus. Was.
[0012]
[Problems to be solved by the invention]
However, the above-described plasma processing apparatus is designed to supply power at a frequency of about 13.56 MHz, and does not support supplying power at a frequency higher than 13.56 MHz. More specifically, the portion to which high-frequency power is supplied, that is, the entire plasma chamber for performing plasma processing, does not take into account electrical high-frequency characteristics such as impedance and resonance frequency characteristics, and is about 13.56 MHz or more. When the power of the frequency is applied, the power consumption efficiency is not improved, so that not only the deposition rate cannot be improved at the time of film formation, but also the deposition rate is sometimes slowed down. If the input power is further increased in frequency, as the frequency increases, the density of the generated plasma increases and reaches a peak, after which it begins to decrease, and finally glow discharge cannot be performed. The problem that meaning was lost occurred.
[0013]
In a plasma processing apparatus or a plasma processing system having a plurality of plasma chambers, the electrical high-frequency characteristics of each plasma chamber are defined by their mechanical dimensions and other shapes. However, parts constituting each plasma chamber always have variations in dimensions and the like due to mechanical tolerances due to processing during manufacturing. Then, at the stage of assembling these components to manufacture a plasma chamber, the shape such as the mechanical dimensions of each plasma chamber is subject to variations due to assembly tolerance. In addition, there are places where measurements cannot be made after assembling each part, and it is possible to quantitatively determine whether or not the assembly has been completed so that the entire plasma chamber has the same electrical and high-frequency characteristics as originally designed. There has been a problem that there is no means, and there is no means for knowing the difference in electrical high-frequency characteristics of each plasma chamber.
For this reason, the following inconvenience has occurred.
With respect to a plasma processing apparatus or a plasma processing system having a plurality of plasma chambers, there is no design for eliminating a difference in electrical high-frequency characteristics such as impedance and resonance frequency characteristics for the plurality of plasma chambers. In each of the plasma chambers, the effective power consumed in the plasma space, the generated plasma density, and the like may not be uniform.
For this reason, the same plasma processing result may not be obtained even though the same process recipe is applied to a plurality of plasma chambers.
Therefore, in order to obtain the same plasma processing result, the external parameters such as the supplied gas flow rate and pressure, the supplied power, the processing time, and the evaluation described in the above (1) to (3) are obtained for each plasma chamber. It is necessary to grasp the correlation between these by comparing the processing results by the method, but the data amount becomes enormous and it is difficult to perform all of them.
[0014]
When such an inspection method as described in (1) to (3) above is employed as a method for confirming the operation of the plasma processing apparatus and evaluating the operation, it is necessary to confirm whether the apparatus is operating properly. In order to perform the above, it is necessary to operate the plasma processing apparatus, and it is necessary to process and measure the substrate to be processed in a plurality of steps at an inspection place different from the installation place of the plasma processing apparatus.
For this reason, it takes several days or weeks for the evaluation results to be obtained. If the production line is not stopped during that period, the characteristics of the substrate subjected to the plasma processing are unknown. When the condition of the plasma processing apparatus was not good, there was a possibility that the product which did not meet the standard as a product might be produced, so there was a demand that the operation of the plasma processing apparatus be maintained in an appropriate state by a simpler method. .
[0015]
Further, when the inspection method as described in the above (1) to (3) is adopted for a plasma processing apparatus or a plasma processing system having a plurality of plasma chambers, at the time of new installation, adjustment, maintenance and inspection, An adjustment time required to obtain the same processing result by the same process recipe is required on a monthly basis by eliminating machine differences among a plurality of plasma chambers and eliminating processing variations. For this reason, it is necessary to shorten the adjustment period, and costs such as the cost of an inspection board and the like required for such adjustment, the processing cost of the inspection board, and the labor cost of workers engaged in the adjustment work are reduced. There was a problem that it became huge.
[0016]
The present invention has been made in view of the above circumstances, and aims to achieve the following objects.
{Circle around (1)} Uniformization of electrical high-frequency characteristics such as impedance and resonance frequency characteristics for a plurality of plasma chambers.
{Circle around (2)} When the same process recipe is applied to a plurality of plasma chambers, plasma processing results should be made uniform.
{Circle around (3)} It is unnecessary to grasp the process conditions based on the correlation between the external parameters and the processing results obtained by the above-described evaluation methods (1) to (3) based on the vast amount of data for a plurality of plasma chambers.
{Circle around (4)} To shorten the adjustment time required to obtain substantially the same processing result using the same process recipe.
{Circle around (5)} Improving the processing speed (deposition speed in a film forming apparatus, processing speed in a processing apparatus) by increasing the plasma excitation frequency.
{Circle around (6)} Improving the uniformity of plasma processing in the in-plane direction of the substrate to be processed (in-film direction distribution of film thickness, in-plane direction distribution of processing variation), and in deposition apparatuses such as plasma CVD and sputtering. And to improve film characteristics such as withstand voltage of the deposited film.
(7) To improve power consumption efficiency and obtain the same processing speed or film characteristics, reduce power loss so as to require less input power than before.
(8) To reduce running costs and costs for adjustment, and to improve productivity.
(9) To provide a plasma processing apparatus and a plasma processing system that can easily maintain an appropriate operation state.
[0017]
[Means for Solving the Problems]
The plasma processing apparatus of the present invention has a plasma processing chamber having electrodes for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrodes, and an input terminal and an output terminal. A plasma processing chamber unit comprising: a high-frequency power supply connected to the electrode; and a high-frequency power distribution body connected to the electrode connected to the output terminal to obtain an impedance matching between the plasma processing chamber and the high-frequency power supply. A plasma processing apparatus comprising a plurality of plasma processing apparatuses,
In each of the plasma processing chamber units,During non-plasma emission,An end of the high-frequency power distributor connected to the output terminal of the matching circuit when supplying the high-frequency powerIsOf the high-frequency characteristics A of each of the plurality of plasma processing chambers measured at the measurement position, the maximum value A thereof_maxAnd the minimum value A_minAnd the variation
(A_max-A_min) / (A_max+ A_min)
AndThe high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
This valueLess than 0.1The above problem was solved by being set to a value within the range.
The present inventionWith the matching circuit separated from the measurement position, each high-frequency characteristic A of the plasma processing chamber is measured.Is preferred.
The plasma processing apparatus of the present invention has a plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, and an input terminal and an output terminal, and is connected to the electrode. A matching circuit that connects a high-frequency power supply to the output terminal and connects the high-frequency power supply to the input terminal via a high-frequency power supply to obtain impedance matching between the plasma processing chamber and the high-frequency power supply. A plasma processing apparatus including a plurality of plasma processing chamber units,
In each of the plasma processing chamber units,During non-plasma emission,The high-frequency power supply-side end of the high-frequency power feeder connected to the high-frequency power supply when supplying the high-frequency powerIsOf the high-frequency characteristics A of each of the plurality of plasma processing chambers measured at the measurement position, the maximum value A thereof_maxAnd the minimum value A_minAnd the variation
(A_max-A_min) / (A_max+ A_min)
AndThe high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
This valueLess than 0.1The above problem was solved by being set to a value within the range.
The present inventionWith the high-frequency power supply disconnected from the measurement position, each high-frequency characteristic A of the plasma processing chamber is measured.Is preferred.
The plasma processing apparatus of the present invention has a plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, and an input terminal and an output terminal, and is connected to the electrode. A matching circuit that connects a high-frequency power supply to the output terminal and connects the high-frequency power supply to the input terminal via a high-frequency power supply to obtain impedance matching between the plasma processing chamber and the high-frequency power supply. A plasma processing apparatus including a plurality of plasma processing chamber units,
In each of the plasma processing chamber units,During non-plasma emission,The input terminal connected to the high-frequency power feeder when supplying the high-frequency powerIsOf the high-frequency characteristics A of each of the plurality of plasma processing chambers measured at the measurement position, the maximum value A thereof_maxAnd the minimum value A_minAnd the variation
(A_max-A_min) / (A_max+ A_min)
AndThe high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
This valueLess than 0.1The above problem was solved by being set to a value within the range.
The present inventionThe high-frequency characteristics A of each of the plasma processing chambers are measured with the high-frequency power feeder separated from the measurement position.Is preferred.
In the present invention,VariationIs set to a value in a range smaller than 0.03.
In the present invention, the first series resonance frequency f corresponding to each of the plasma processing chambers₀  Is three times the frequency f of the high frequency power._e  It can be set to a larger range of values.
In the present invention, the first series resonance frequency f corresponding to each of the plasma processing chambers₀  Is three times the frequency f of the high frequency power._e  It can be set to a larger range of values.
In the present invention, measurement terminals for measuring high-frequency characteristics A of the plasma processing chamber may be provided at the measurement positions corresponding to the respective plasma processing chambers.
In the present invention, near the measurement position,
When exciting the plasma, the electrical connection between the measurement position and the measurement terminal is cut off, and the electrical connection between the power distribution body side and the high-frequency power supply side is secured, and the frequency characteristics of the plasma processing chamber are reduced. When measuring A, a switch may be provided to secure the electrical connection between the measurement position and the measurement terminal and to disconnect the electrical connection between the high-frequency power supply side and the measurement position.
In the present invention, in the case where the switch cuts off the electrical connection between the high-frequency power distributor end and the measurement terminal and secures the electrical connection between the power distributor end and the output terminal of the matching circuit. A high frequency characteristic A measured at an output terminal position of the matching circuit;
The switch ensures the electrical connection between the end of the power distribution unit and the terminal for measurement and the terminal for measurement when the electric connection between the power distribution unit end and the output terminal of the matching circuit is disconnected. The measured high-frequency characteristic A can be set to be equal.
The plasma processing system of the present invention includes:aboveMultiple plasma processing devices are providedRukoThis has solved the above problem.
In the present invention, a high-frequency characteristic measuring device can be switchably connected to the measuring terminal of each plasma processing chamber.
In the present invention, the high-frequency characteristics A between the measurement position and the high-frequency characteristic measuring device connected to the measurement terminal in each plasma processing chamber can be set to be equal.
In the present invention, in the case where the switch cuts off the electrical connection between the high-frequency power distributor end and the measurement terminal and secures the electrical connection between the power distributor end and the output terminal of the matching circuit. A high frequency characteristic A measured at an output terminal position of the matching circuit;
The switch ensures the electrical connection between the end of the power distribution unit and the terminal for measurement and the terminal for measurement when the electric connection between the power distribution unit end and the output terminal of the matching circuit is disconnected. The measured high-frequency characteristic A can be set to be equal.
An inspection method for a plasma processing apparatus according to the present invention includes a plasma processing chamber having electrodes for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrodes, and an input terminal and an output terminal. A matching circuit for connecting the high-frequency power supply to a terminal and connecting a high-frequency power distributor connected to the electrode to the output terminal to obtain impedance matching between the plasma processing chamber and the high-frequency power supply. An inspection method of a plasma processing apparatus including a plurality of chamber units,
In each of the plasma processing chamber units,During non-plasma emission,An end of the high-frequency power distributor connected to the output terminal of the matching circuit when supplying the high-frequency powerIsOf the high-frequency characteristics A of each of the plurality of plasma processing chambers measured at the measurement position, the maximum value A thereof_maxAnd the minimum value A_minAnd the variation
(A_max-A_min) / (A_max+ A_min)
AndThe high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
This valueIs less than 0.1rangeCheck ifBy doing so, the above problem was solved.
An inspection method of a plasma processing apparatus according to the present invention includes a plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, and an input terminal and an output terminal. A high-frequency power distributor connected to the output terminal and a high-frequency power supply connected to the input terminal via a high-frequency power feeder to obtain impedance matching between the plasma processing chamber and the high-frequency power supply A method for inspecting a plasma processing apparatus including a plurality of plasma processing chamber units including:
In each of the plasma processing chamber units,During non-plasma emission,The high-frequency power supply-side end of the high-frequency power feeder connected to the high-frequency power supply when supplying the high-frequency powerIsOf the high-frequency characteristics A of each of the plurality of plasma processing chambers measured at the measurement position, the maximum value A thereof_maxAnd the minimum value A_minAnd the variation
(A_max-A_min) / (A_max+ A_min)
AndThe high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
This valueIs less than 0.1rangeCheck ifBy doing so, the above problem was solved.
An inspection method of a plasma processing apparatus according to the present invention includes a plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, and an input terminal and an output terminal. A high-frequency power distributor connected to the output terminal and a high-frequency power supply connected to the input terminal via a high-frequency power feeder to obtain impedance matching between the plasma processing chamber and the high-frequency power supply A method for inspecting a plasma processing apparatus including a plurality of plasma processing chamber units including:
In each of the plasma processing chamber units,During non-plasma emission,The input terminal connected to the high-frequency power supply when supplying the high-frequency power;IsOf the high-frequency characteristics A of each of the plurality of plasma processing chambers measured at the measurement position, the maximum value A thereof_maxAnd the minimum value A_minAnd the variation
(A_max-A_min) / (A_max+ A_min)
AndThe high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
This valueIs less than 0.1rangeCheck ifBy doing so, the above problem was solved.
In the present invention,VariationRange of less than 0.03Check ifcan do.
In the present invention, the first series resonance frequency f corresponding to each of the plasma processing chambers₀  3 timesButThe frequency f of the high-frequency power_e  Larger range of valuesCheck ifcan do.
In the inspection method of the plasma processing system of the present invention,aboveMultiple plasma processing devices are providedOctopusCan be.
[0018]
In the present invention, in the plasma chamber (plasma processing chamber unit) corresponding to each plasma processing chamber, when supplying the high-frequency power, measurement is performed at an end of the high-frequency power distribution body connected to an output terminal of a matching circuit. Of the high frequency characteristics A of each of the plurality of plasma processing chambers,_maxAnd the minimum value A_minIs calculated by the following equation (10A).
(A_max-A_min) / (A_max+ A_min) (10A)
By setting this value to a value within a predetermined range, it is possible to eliminate a difference in electrical and high-frequency characteristics such as impedance and resonance frequency characteristics for a plurality of plasma chambers (plasma processing chamber units). This makes it possible to set a plurality of plasma chambers within a certain control width based on impedance characteristics and the like as an index, so that in each plasma chamber, the effective power consumed in the plasma space Can be made substantially uniform.
As a result, the same process recipe is applied to a plurality of plasma chambers to obtain substantially the same plasma processing result. In other words, for example, when film formation is performed in a plurality of plasma chambers, It is possible to obtain a film having substantially uniform film characteristics such as an etching rate and the like.
[0019]
Here, in the present invention, instead of the measurement position, in each of the plasma processing chamber units (plasma chambers), the high-frequency power feeder ( By measuring the high-frequency characteristics A of each of the plurality of plasma processing chambers at a measurement position that is the end of the power supply line on the high-frequency power source side, the plasma processing chamber is compared with a case where the matching circuit is not included in the measurement range. It is possible to eliminate differences in electrical and high-frequency characteristics between multiple plasma chambers, including not only chambers, but also matching circuits. Uniformity can be improved, and the same process recipe is applied to this, so that compared with the case where the matching circuit is not included in the measurement range, the uniformity is higher. It is possible to obtain a plasma processing results.
[0020]
Further, in the present invention, when the high-frequency power is supplied to each of the plasma processing chamber units (plasma chambers) in place of the measurement position,Power supplyBy measuring the high-frequency characteristics A of each of the plurality of plasma processing chambers at a measurement position serving as the input terminal connected to an electric body (feeding line), a matching circuit and a high-frequency power feeder are not included in the measurement range. Compared to the case, not only the plasma processing chamber but also a plurality of plasma chambers including a matching circuit and a high-frequency power feeder can be eliminated in terms of electrical and high-frequency characteristics. It is possible to further increase the uniformity of the effective power consumed in the plasma space, and to apply the same process recipe to this, compared to the case where the matching circuit and the high-frequency power feeder are not included in the measurement range. Further, it is possible to obtain a plasma processing result having substantially the same identity.
[0021]
Further, in the present invention, specifically, by setting the above-mentioned predetermined value to a range smaller than 0.1, the value of the variation in film thickness can be set to ± in a plasma chamber laminated under substantially the same conditions. The uniformity of the plasma processing can be maintained, for example, within the range of 5%.
[0022]
Further, by setting the above-mentioned predetermined value to a range smaller than 0.03, it is possible to eliminate a difference in electrical high-frequency characteristics such as impedance and resonance frequency characteristics for a plurality of plasma chambers, As a result, it is possible to set a plurality of plasma chambers within a certain management width using the impedance characteristic as an index, so that the effective power consumed in the plasma space in each plasma chamber is substantially uniform. can do.
As a result, the same process recipe is applied to a plurality of plasma chambers to obtain substantially the same plasma processing result. In other words, for example, when film formation is performed in a plurality of plasma chambers, It is possible to obtain a film having substantially uniform film characteristics such as an etching rate and the like. Specifically, by setting the value of the above-mentioned variation to a range smaller than 0.03, the value of the variation of the film thickness is kept within a range of ± 2% in the plasma chambers laminated under substantially the same conditions. be able to.
[0023]
In the present invention, the high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, and a reactance X at a frequency of the high frequency power. By adopting the means, it is possible to eliminate mechanical differences in electrical high-frequency characteristics, and thereby, it is possible to set a plurality of plasma chambers within a certain control width based on impedance characteristics and the like. Therefore, in each of the plasma chambers, the effective power consumed in the plasma space can be made substantially uniform.
Here, when the impedance Z is adopted as the high-frequency characteristic A, since the impedance Z is a value at the frequency of plasma excitation, a parameter that can be grasped only by measuring the frequency dependency between Z and θ. It is not necessary to see the frequency dependence of the high frequency characteristics of the plasma chamber for the resonance frequency f, which is easier to grasp than the resonance frequency f. Further, the parameter is a parameter by which the electrical high-frequency characteristics at the frequency of plasma excitation of the plasma chamber can be more directly grasped.
Further, when the resistance R and the reactance X are adopted, the impedance at the frequency at which the plasma of the plasma chamber is excited is more directly compared with the case where the impedance Z which is the vector amount of the resistance R and the reactance X is observed. Electrical high circumferenceWavyCharacteristics can be captured.
[0024]
Alternatively, the high frequency characteristic A is the first series resonance frequency f₀  The following means can be adopted.
This first series resonance frequency f₀  Is an electrical high-frequency characteristic determined by a mechanical structure as a major factor, and is considered to be different for each actual machine (plasma chamber). Within this range, the first series resonance frequency f₀  By setting the above, it is possible to set the general electrical high-frequency characteristics which have not been considered in the past for each actual device, and it is possible to expect the stability of plasma generation. As a result, it is possible to provide a plasma processing apparatus or a plasma processing system that has high operation stability and can expect uniform operation in each plasma chamber. Accordingly, it is not necessary to grasp the process conditions based on the correlation between the external parameters and the processing result by the evaluation method for processing the actual substrate from the huge data for a plurality of plasma chambers. Therefore, at the time of new installation, adjustment, maintenance and inspection, the adjustment time required to eliminate the machine difference between each plasma chamber and eliminate the process variation, and to obtain the almost same Can be greatly reduced as compared with the case where a conventional inspection method using film formation or the like is adopted. In addition, it is possible to reduce costs such as the cost of an inspection board and the like necessary for such adjustment, the inspection processing cost of the inspection board, and the labor cost of workers engaged in adjustment work.
[0025]
Here, the first series resonance frequency f₀  The definition will be described.
First, the frequency dependence of the impedance of the plasma chamber is measured. At this time, an impedance measurement range of the plasma chamber is defined as described later, and the supplied power frequency f_e  The frequency dependence of the impedance of the plasma chamber is measured by measuring the impedance vector amount (Z, θ) by changing the measurement frequency in a range including the above. Here, for example, the power frequency f set to a value such as 13.56 MHz, 27.12 MHz, 40.68 MHz, or the like._e  , The measurement frequency is set in a range of, for example, about 1 MHz to 100 MHz.
FIG. 6 shows the first series resonance frequency f₀  6 is a graph showing frequency dependence characteristics of impedance Z and phase θ for explaining the following.
Next, as shown in FIG. 6, the impedance characteristic curve and the phase curve are plotted by plotting the impedance Z and the phase θ with respect to the measurement frequency, and the minimum value of the impedance among the minimum values of the impedance Z, that is, the measurement frequency The frequency at which the phase θ becomes zero when the phase θ changes from minus to plus for the first time counting from the lower side of the first series resonance frequency f₀  Is defined as
[0026]
Next, the above-described impedance measurement range (high-frequency characteristic measurement range) of the plasma chamber will be described.
A high frequency power supply is connected to the plasma chamber via a matching circuit, and the output side of the matching circuit on the output side is set as an impedance measurement range.
Here, most of the matching circuits are configured to include a plurality of passive elements in order to adjust impedance in response to changes in the plasma state or the like in the plasma chamber.
FIG. 3 is a schematic diagram showing the matching circuit 2A.
For example, as shown in FIG. 3, as the matching circuit 2A, a coil 23 and a tuning capacitor 24 are provided in series between the high-frequency power supply 1 and the electrode 4 for plasma discharge. Another example is a matching circuit 2A in which another load capacitor 22 is connected in parallel and one end is grounded. Among the passive elements of such a matching circuit, the passive element at the output final stage is separated at the output terminal position, that is, the element directly connected to the electrode 4 side, in the case of the above example, the output terminal position PR of the tuning capacitor 24. In the state where the matching circuit 2A is disconnected, a portion of the plasma chamber ahead of the matching circuit 2A is defined as the measurement range.
[0027]
In addition, as shown in FIG. 3, the power supply line (high-frequency power feeder) 1A connecting the high-frequency power supply 1 and the matching circuit 2A is separated from the high-frequency power supply 1 side end, instead of the above-described measurement position. With the high-frequency power supply 1A disconnected at the measurement position PR2, which is the first side end, a portion of the plasma chamber earlier than this can be defined as the measurement range.
Further, instead of the measurement position, as shown in FIG. 3, a power supply line (high-frequency power feeder) 1A connecting the high-frequency power supply 1 and the matching circuit 2A is separated from the end of the matching circuit 2A side. At the measurement position PR3, which is an input terminal connected to the power supply line 1A of the circuit 2A, in a state where the high-frequency power supply 1A and the power supply line 1A are disconnected, a plasma chamber portion ahead of this may be defined as the measurement range. it can.
[0028]
In the present invention, the first series resonance frequency f₀  Of the power frequency f_e  By setting the value to a larger range, even when power of a high frequency of about 13.56 MHz or more, which is generally used in the past, is supplied, the power can be efficiently introduced into the plasma generation space. Thus, when the same frequency is supplied, the effective power consumed in the plasma space can be increased as compared with the conventional plasma processing apparatus. As a result, it is possible to improve the deposition rate when laminating the films.
[0029]
In the present invention, a measurement terminal for measuring a high-frequency characteristic A of the plasma chamber is provided at the measurement position of the plasma chamber corresponding to each of the plasma processing chambers, and a plasma is excited near the measurement position. In doing so, the electrical connection between the measurement position and the measurement terminal is cut off, the electrical connection between the plasma excitation electrode side and the high-frequency power supply side is secured, and the frequency characteristic A of the plasma chamber is changed. When measuring, the changeover switch for securing the electrical connection between the measurement position and the measurement terminal and disconnecting the electrical connection between the high-frequency power supply side and the measurement position is provided. To separate the terminal from conduction to the high-frequency power supply, high-frequency power feeder, matching circuit, high-frequency power distributor, and electrode for plasma excitation , It is not necessary to attach and detach the high-frequency power supply side of the portion corresponding to the power supply portion and each of the measurement positions, the probing when measuring the impedance characteristics of the plasma chamber can be easily performed. In addition, this switch mechanically moves the configuration of the plasma chamber out of the measurement range among the high-frequency power supply, the high-frequency power feeder, the matching circuit, the high-frequency power distributor, and the like from the measurement position to the measurement range of the plasma chamber. Since it is not necessary to attach / detach to / from the plasma chamber, it is possible to more accurately measure the high-frequency characteristics A of the plasma chamber corresponding to each measurement position. Therefore, it is possible to easily measure the high-frequency characteristics A for a plurality of plasma chambers, to improve the work efficiency when measuring the high-frequency characteristics A, and to perform new installation, adjustment, maintenance and inspection, which would take months on a conventional method. The adjustment work at the time can be easily performed, and the machine difference between the plurality of plasma chambers can be more easily eliminated.
[0030]
Here, specifically, measurement terminals for measuring high-frequency characteristics A of the plasma chamber are provided in the vicinity of the high-frequency power distributor end portions of the plasma chamber corresponding to the respective plasma processing chambers, and the high-frequency power Between the end of the distributor and the terminal for measurement, when exciting the plasma, disconnect the electrical connection between the end of the distributor and the terminal for measurement and disconnect the end of the distributor and the matching circuit. When the electrical connection with the output terminal is ensured, and when measuring the frequency characteristic A of the plasma chamber, the electrical connection between the end of the power distribution body and the measurement terminal is ensured, and the end of the power distribution body is secured. And a changeover switch for disconnecting the electrical connection between the output terminal of the matching circuit and the power supply line portion for separating the power supply conductor and the matching circuit during measurement. Probing for measuring the impedance characteristics of each plasma chamber can be easily performed without attaching / detaching the combined circuit, and the matching circuit can be disconnected by a switch. It is possible to measure various impedance characteristics. Therefore, the first series resonance frequency f for a plurality of plasma chambers₀  Can be easily measured, and the first series resonance frequency f₀  The work efficiency at the time of measurement is improved, and the adjustment work at the time of new installation, adjustment, maintenance and inspection, which was required by the conventional method on a monthly basis, can be easily performed, and the machine difference between multiple plasma chambers can be more easily achieved. Can be eliminated.
[0031]
In the present invention, a high-frequency characteristic measuring device is switchably connected to the measuring terminal of the plasma chamber corresponding to each plasma processing chamber. By disconnecting the connection from the plasma chamber or by switching the switch, it is possible to prevent an electrical influence acting on the high-frequency measuring device when plasma is generated. In addition, when a plurality of plasma chambers are provided side by side, measurement of these plasma chambers can be performed by using a single impedance measuring device. Accordingly, the high-frequency characteristics A by measuring the impedance and the like can be obtained only by switching the switch without detaching and connecting the connection between the plasma chamber and the high-frequency characteristic measuring device, and without attaching and detaching the probe for measuring the high-frequency characteristics such as the impedance. In particular, the first series resonance frequency f₀  Can be easily measured.
Furthermore, the connection of the high-frequency characteristic measuring terminals is sequentially switched to the measuring terminals of the plurality of plasma chambers to measure the respective high-frequency characteristics, so that the high-frequency characteristics of the plurality of plasma chambers can be measured by one high-frequency characteristic measuring instrument. Can be measured.
[0032]
Further, in the present invention, by the switch, the electrical connection between the measurement position and the measurement terminal is cut, and the high-frequency power supply side when the electrical connection in the measurement range between the power distributor side and the high-frequency power supply side is secured. The high-frequency characteristic A measured in a measurement range connected to the switch and the switch ensure the electrical connection between the measurement position and the measurement terminal and disconnect the electrical connection between the high-frequency power supply side and the measurement position. In this case, the high-frequency characteristic A measured at the measurement terminal is set to be equal, as a specific example, the switch is used to cut off the electrical connection between the high-frequency power distribution unit end and the measurement terminal. And a high-frequency characteristic A measured at the output terminal position of the matching circuit when the electrical connection between the power distribution unit end and the output terminal of the matching circuit is secured. The switch ensures the electrical connection between the end of the power distribution unit and the terminal for measurement and the terminal for measurement when the electric connection between the power distribution unit end and the output terminal of the matching circuit is disconnected. The measured high-frequency characteristic A is set to be equal, and as a further specific example, the switch disconnects the electrical connection between the high-frequency power distribution body end and the measurement terminal and sets the power distribution body end. And a high-frequency characteristic A measured at the output terminal position of the matching circuit when the electrical connection between the terminal and the output terminal of the matching circuit is secured. The high-frequency characteristic A measured at the measurement terminal when the electrical connection between the end of the power distribution unit and the output terminal of the matching circuit is cut while ensuring the connection is equal. With these, for a plurality of plasma chambers, measured values such as impedance from a high-frequency characteristic measuring instrument connected to a measuring terminal can be all set with respect to a set measuring position. Can be regarded as a value equivalently corrected to the value measured from each measurement position, so that the correction of the calculation of the high-frequency characteristic A such as the first series resonance frequency becomes virtually unnecessary, and the conversion of the actually measured value is performed. Work efficiency can be improved.
[0033]
As means for realizing the above, the high-frequency characteristics A between the measurement position and the high-frequency characteristic measuring device connected to the measurement terminal in each plasma processing chamber unit (plasma chamber) are set to be equal. More specifically, means such as equalizing the length of a coaxial cable from the output position of the final stage on the output side of the matching circuit of each plasma chamber to a high-frequency characteristic measuring device such as impedance can be applied.
[0034]
In the present invention, the number of plasma chambers provided in each plasma processing apparatus, and the number of plasma processing apparatuses and the number of plasma chambers in a plasma processing system can be arbitrarily set.
If the application is different for each plasma processing apparatus and it is not necessary to match the process recipe, the first series resonance frequency f₀  The setting conditions of the high-frequency characteristic A, for example, can be set differently for each plasma processing apparatus in the plasma processing system.
[0035]
Furthermore, the present invention includes a first high-frequency power supply, a high-frequency electrode connected to the first high-frequency power supply, and a matching circuit for obtaining impedance matching between the first high-frequency power supply and the high-frequency electrode. A high-frequency electrode-side matching box, a second high-frequency power supply, a susceptor electrode disposed opposite to the high-frequency electrode, connected to the second high-frequency power supply, and supporting a substrate to be processed; A susceptor electrode side matching box having a matching circuit for obtaining impedance matching with the susceptor electrode.HaveIn the so-called two-frequency excitation type plasma CVD processing unit, the first series resonance frequency f measured from the power supply frequency on the susceptor side and the output terminal of the matching circuit is also used.₀  Each setting can be applied to the high-frequency characteristics A in the same manner as in the above-described cathode electrode side.
[0036]
In the performance check system of the plasma processing apparatus or the plasma processing system of the present invention, the purchase orderer connects the public line from the information terminal to the performance status information indicating the operation performance status of each plasma processing chamber unit uploaded by the sales and maintenance person. By allowing the information to be viewed through the Internet, it becomes possible to transmit the information used as a criterion at the time of purchase to the purchaser, and the operating performance and maintenance of the plasma processing apparatus or the plasma processing system during use. Information can be easily provided. Further, as described above, the performance status information is the first series resonance frequency f as a performance parameter for the plasma processing apparatus or the plasma processing system.₀  Including the high-frequency characteristics A, etc., it is possible to provide performance judgment material for the plasma processing apparatus or the plasma processing system of the purchaser and to make an appropriate judgment at the time of purchase. Further, the performance status information can be output as a catalog or a specification.
[0037]
As an inspection method of a plasma processing apparatus or a plasma processing system according to the present invention, a plasma chamber (plasma processing chamber unit) corresponding to each plasma processing chamber is connected to an output terminal of a matching circuit when supplying the high-frequency power. Of the high-frequency characteristics A of each of the plurality of plasma processing chambers measured at the end of the high-frequency power distribution body,_maxAnd the minimum value A_minIs calculated by the following equation (10A).
(A_max-A_min) / (A_max+ A_min) (10A)
By inspecting whether this value is set to a value within a predetermined range, electrical and high-frequency characteristics such as impedance and resonance frequency characteristics are obtained for a plurality of plasma chambers (plasma processing chamber units). It is possible to confirm whether or not the machine is set to a state in which the machine difference is eliminated, and thereby, it becomes possible to set a plurality of plasma chambers within a certain management width using an impedance characteristic or the like as an index. In each plasma chamber, the effective power consumed in the plasma space, the density of the generated plasma, and the like can be made substantially uniform. As a result, the same process recipe is applied to a plurality of plasma chambers to obtain substantially the same plasma processing result. In other words, for example, when film formation is performed in a plurality of plasma chambers, The plasma chamber can be set to a state where a film having substantially uniform film characteristics such as an etching rate can be obtained.
The electrical high frequency characteristics of each plasma chamber are defined by its shape, such as its mechanical dimensions. However, the components constituting each plasma chamber always have variations in dimensions and the like due to mechanical tolerances due to processing during manufacturing. Then, at the stage of assembling these components to manufacture a plasma chamber, the shape such as the mechanical dimensions in each plasma chamber is subject to variations due to assembly tolerance. In addition, some parts could not be measured after assembling each part, but by applying this inspection method, it was easy to measure without measuring, and even for those that could not be measured, quantitative plasma The performance of the chamber can be grasped, and the difference in electrical high frequency characteristics can be known.
[0038]
Here, instead of the measurement position, in each of the plasma processing chamber units (plasma chambers), when the high-frequency power is supplied, the high-frequency power feeder (feed line) connected to the high-frequency power supply By measuring the high-frequency characteristics A of each of the plurality of plasma processing chambers at a measurement position that is a high-frequency power supply side end, in addition to the plasma processing chamber, It is possible to eliminate the difference in electrical and high-frequency characteristics between multiple plasma chambers including the matching circuit, and to improve the uniformity of the effective power consumed in the plasma space in each plasma chamber. The same process recipe is applied to this, and the plasma processing result is almost the same as compared to the case where the matching circuit is not included in the measurement range. It is possible to obtain.
[0039]
Further, instead of the measurement position, the input terminal is connected to the high-frequency power feeder (feed line) when the high-frequency power is supplied in each of the plasma processing chamber units (plasma chamber). By measuring the high-frequency characteristics A of each of the plurality of plasma processing chambers at the measurement position, compared to the case where the measurement range does not include the matching circuit and the high-frequency power feeder, not only the plasma processing chamber but also the matching circuit, For multiple plasma chambers including power feeders, it is possible to eliminate the difference in electrical high-frequency characteristics, and to further improve the uniformity of the effective power consumed in the plasma space in each plasma chamber. The same process recipe can be applied to this, compared to the case where the matching range and high-frequency power feeder are not included in the measurement range. Furthermore it is possible to obtain a high plasma processing result of substantially the same resistance.
[0040]
Further, by inspecting whether or not the above-mentioned predetermined value is set in a range smaller than 0.1, in the plasma chamber laminated under substantially the same conditions, the value of the variation of the film thickness is set in a range of ± 5%. It is possible to confirm that the plasma processing is in a state of maintaining the uniformity, for example, by stopping the processing.
Further, by inspecting whether or not the above-mentioned predetermined value is set in a range smaller than 0.03, machine differences in electrical high-frequency characteristics such as impedance and resonance frequency characteristics for a plurality of plasma chambers are eliminated. State can be set, and it is possible to confirm that a plurality of plasma chambers are set within a certain management width using the impedance characteristic as an index. The plasma density and the like can be set to be substantially uniform.
As a result, the same process recipe is applied to a plurality of plasma chambers to obtain substantially the same plasma processing result. In other words, for example, when film formation is performed in a plurality of plasma chambers, The plasma chamber can be set in a state where a film having substantially uniform film characteristics such as an etching rate can be obtained. More specifically, by setting the value of the above-mentioned variation to a range smaller than 0.03, the value of the variation in the film thickness is kept within a range of ± 2% in the plasma chamber laminated under substantially the same conditions. Will be able to do it.
[0041]
In the method for inspecting a plasma processing apparatus or a plasma processing system according to the present invention, the high-frequency characteristic A may include a resonance frequency f, an impedance Z at a frequency of the high-frequency power, a resistance R at a frequency of the high-frequency power, or By adopting a means that is one of the reactances X in frequency, a plurality of plasma chambers are set within a certain control width using an impedance characteristic or the like as an index so as to eliminate a difference in electrical high frequency characteristics. In each plasma chamber, the effective power consumed in the plasma space can be set to be substantially uniform.
Here, when the impedance Z is adopted as the high-frequency characteristic A, since the impedance Z is a value at the frequency at which the plasma is excited, it is a parameter that can be grasped only after measuring the frequency dependence of Z and θ. It is not necessary to look at the frequency dependence of the high frequency characteristics of the plasma chamber as compared with a certain resonance frequency f, so that it is easier to inspect the state of the plasma chamber than when the resonance frequency f is used as a parameter. be able to. At the same time, the electrical high frequency characteristics at the frequency of plasma excitation of the plasma chamber can be grasped more directly.
Further, when the resistance R and the reactance X are adopted, the inspection can be performed more easily than when the impedance Z which is a vector amount of the resistance R and the reactance X is adopted as a parameter. At the same time, the electrical high-frequency characteristics at the frequency at which the plasma of the plasma chamber is excited can be directly captured.
[0042]
Alternatively, the high frequency characteristic A is the first series resonance frequency f₀  By adopting the means (1), it is possible to set the general electrical and high frequency characteristics of each actual machine (plasma chamber) having a difference in mechanical structure, thereby stabilizing the plasma generation. You can expect sex. As a result, it is possible to provide a plasma processing apparatus or a plasma processing system that has high operation stability and can expect uniform operation in each plasma chamber.
Accordingly, it is not necessary to grasp the process conditions based on the correlation between the external parameters and the processing result by the evaluation method for processing the actual substrate from the huge data for a plurality of plasma chambers. Therefore, at the time of new installation, adjustment, maintenance, and inspection, the adjustment time required to eliminate the machine difference between each plasma chamber and eliminate processing variations and obtain substantially the same processing result with the same process recipe is not practical. Inspection time can be greatly reduced as compared with the case where a conventional inspection method using film formation or the like is adopted. In addition, it is possible to reduce costs such as the cost of an inspection board and the like necessary for such adjustment, the inspection processing cost of the inspection board, and the labor cost of workers engaged in adjustment work.
Furthermore, the connection of the high-frequency characteristic measuring terminals is sequentially switched to the measuring terminals of the plurality of plasma chambers to measure the respective high-frequency characteristics, so that the high-frequency characteristics of the plurality of plasma chambers can be measured by one high-frequency characteristic measuring instrument. Can be measured.
[0043]
In addition, the switch disconnects the electrical connection between the measurement position and the measurement terminal and is connected to the high-frequency power supply when the electrical connection in the measurement range between the power distributor and the high-frequency power supply is secured. The high-frequency characteristic A to be measured in the measurement range and the switch ensure the electrical connection between the measurement position and the measurement terminal and cut off the electrical connection between the high-frequency power supply side and the measurement position. Since the high-frequency characteristic A measured at the measurement terminal is set to be equal to the high-frequency characteristic A, a measurement value such as impedance from a high-frequency characteristic measurement device connected to the measurement terminal is obtained for a plurality of plasma chambers. , Both shall be regarded as values equivalent to the values measured from each measurement position for the set measurement position. Therefore, the correction of the calculation of the high-frequency characteristic A such as the first series resonance frequency is practically unnecessary, and the conversion of the actual measurement value is unnecessary, so that the work efficiency in the inspection of the plasma processing apparatus or the plasma processing system is improved. Can be.
[0044]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a first embodiment of a plasma processing apparatus, a performance confirmation system, and an inspection method according to the present invention will be described with reference to the drawings.
[First Embodiment]
FIG. 1 is a diagram showing a schematic configuration of a plasma processing apparatus 71 of the present embodiment. The plasma processing apparatus 71 of the present embodiment is capable of performing, for example, an integrated process from the formation of polycrystalline silicon as a semiconductor active film of a top gate type TFT to the formation of a gate insulating film. The device has a room unit.
[0045]
As shown in FIG. 1, in the plasma processing apparatus 71 of the present embodiment, five processing chamber units, one loader chamber 73, and one unloader chamber 74 are connected around a substantially heptagon-shaped transfer chamber 72. Is established. The five processing chamber units include a first film forming chamber for forming an amorphous silicon film, a second film forming chamber for forming a silicon oxide film, and a third film forming chamber for forming a silicon nitride film. Plasma processing chamber units (plasma chambers) 75, 76, and 77, a laser annealing chamber 78 for performing an annealing process on a substrate after film formation, and a heat treatment chamber 79 for performing a heat treatment on the substrate after film formation. is there.
[0046]
The first film forming chamber 75, the second film forming chamber 76, and the third film forming chamber 77, which are plasma processing chamber units (plasma chambers), can perform different processes such as forming different types of films. Although the same processing can be performed by the same process recipe, they have substantially the same configuration. In the plurality of plasma chambers 75, 76, and 77, as described later, the first series resonance frequency f₀  And the maximum value A_maxAnd the minimum value A_minIs calculated by the following equation (10A):
(A_max-A_min) / (A_max+ A_min) (10A)
And this value is set to a value smaller than 0.1.
Here, the configuration of the first film forming chamber 75 will be described as an example.
[0047]
FIG. 2 is a cross-sectional view illustrating a schematic configuration of a plasma processing chamber unit (plasma chamber) of the present embodiment, and FIG. 3 is a schematic diagram illustrating a matching circuit of the plasma processing chamber unit (plasma chamber) in FIG.
[0048]
The plasma chamber (first film forming chamber) 75 is a single-frequency excitation type plasma processing chamber unit capable of performing plasma processing such as chemical vapor deposition (CVD), sputtering, dry etching, and ashing. As shown in FIG. Are provided with parallel plate electrodes 4 and 8 for exciting plasma, and a high frequency power supply 1 connected to this electrode 4 and a matching circuit 2A for obtaining impedance matching between the plasma chamber 75 and the high frequency power supply 1. Is provided.
At the same time, as will be described later, the plasma chamber 75 has the first series resonance frequency f measured from the output terminal position PR of the matching circuit 2A.₀  Is three times the power frequency f supplied from the high-frequency power source 1 to the plasma chamber 75._e  It is set to a larger range of values.
[0049]
More specifically, as shown in FIGS. 2 and 3, the plasma chamber 75 includes a plasma excitation electrode (electrode) 4 connected to the high-frequency power supply 1 and a shower plate at an upper position of a chamber chamber (plasma processing chamber) 60. A susceptor electrode (opposite electrode) 8 on which a substrate 16 to be processed is placed is provided below the chamber 60 so as to face the shower plate 5. The plasma excitation electrode 4 is connected to the first high frequency power supply 1 via the power supply plate 3 and the matching circuit 2A. The plasma excitation electrode 4 and the power supply plate 3 are covered by a chassis 21, and the matching circuit 2A is housed inside a matching box 2 made of a conductor.
As the power supply plate 3, for example, a copper plate having a shape with a width of 50 to 100 mm, a thickness of 0.5 mm, and a length of 100 to 300 mm, which is plated with silver, is used. The output terminal of the tuning capacitor 24 and the plasma excitation electrode 4 of the matching circuit 2A described later are detachably attached to the plasma excitation electrode 4 by coupling means such as screwing.
[0050]
A shower plate having an annular convex portion 4a provided below the plasma excitation electrode (cathode electrode) 4 and a large number of holes 7 formed below the plasma excitation electrode (cathode electrode) 4 5 is provided in contact with the protrusion 4a. A space 6 is formed between the plasma excitation electrode 4 and the shower plate 5. A gas introduction pipe 17 is connected to the space 6 through the side wall of the chassis 21 and through the plasma excitation electrode (cathode electrode) 4.
[0051]
The gas introduction pipe 17 is made of a conductor, and an insulator 17a is inserted in the gas introduction pipe 17 at a position inside the chassis 21 to insulate the plasma excitation electrode 14 from the gas supply source.
The gas introduced from the gas introduction pipe 17 is supplied from a large number of holes 7, 7 of the shower plate 5 into the chamber 60 formed by the chamber wall 10. The chamber wall 10 and the plasma excitation electrode (cathode electrode) 4 are insulated from each other by an insulator 9. In FIG. 2, the illustration of the exhaust system to be connected to the chamber 60 is omitted.
On the other hand, a disk-shaped wafer susceptor (susceptor electrode) 8 on which the substrate 16 is placed and which also serves as a plasma excitation electrode is provided in the chamber 60.
[0052]
A shaft 13 is connected to the lower center of the susceptor electrode (counter electrode) 8. The shaft 13 is provided to penetrate the chamber bottom 10 </ b> A, and the lower end of the shaft 13 and the center of the chamber bottom 10 </ b> A are connected by a bellows 11. Sealed connection. The wafer susceptor 8 and the shaft 13 can be moved up and down by the bellows 11, so that the distance between the plasma excitation electrodes 4 and 8 can be adjusted.
Since the susceptor electrode 8, the shaft 13, and the support tube 12B are connected, the susceptor electrode 8, the shaft 13, the bellows 11, the chamber bottom 10A, and the chamber wall 10 have the same DC potential. Further, since the chamber wall 10 and the chassis 21 are connected, the chamber wall 10, the chassis 21, and the matching box 2 have the same DC potential.
[0053]
Here, most of the matching circuits 2A are configured to include a plurality of passive elements in order to adjust the impedance in response to a change in the plasma state or the like in the chamber 60.
As shown in FIGS. 2 and 3, the matching circuit 2A includes a coil 23 and a tuning capacitor 24 provided in series between the high-frequency power supply 1 and the power supply plate 3 as a plurality of passive elements. A load capacitor 22 is connected in parallel with the tuning capacitor 24, and one end of the load capacitor 22 is connected to the matching box 21. Here, the tuning capacitor 24 is connected to the plasma excitation electrode 4 via the power supply plate 3.
The matching box 2 is connected to a shielded wire of a feeder (high-frequency power feeder) 1A which is a coaxial cable, and the shielded wire is DC grounded. As a result, the susceptor electrode 8, the shaft 13, the bellows 11, the chamber bottom 10A, the chamber wall 10, the chassis 21, and the matching box 2 are set to the ground potential, and at the same time, one end of the load capacitor 22 is also grounded in a DC manner. It will be in the state that was done.
[0054]
In the plasma chamber 75 of the present embodiment, power having a frequency of about 13.56 MHz or more, specifically, power having a frequency of, for example, 13.56 MHz, 27.12 MHz, 40.68 MHz, or the like is supplied to the two electrodes 4. , 8, and plasma processing such as CVD (chemical vapor deposition), dry etching, and ashing can be performed on the substrate 16 placed on the susceptor electrode 8.
At this time, the high-frequency power is supplied from the high-frequency power supply 1 to the coaxial cable of the power supply line 1A, the matching circuit 2A, the power supply plate 3, and the plasma excitation electrode (cathode electrode) 4. On the other hand, when considering the path of the high-frequency current, the current passes through the plasma space (chamber chamber 60) via these, and then the other electrode (susceptor electrode) 8, shaft 13, susceptor shield 12, bellows 11, It passes through the chamber bottom 10A and the chamber wall 10. After that, the power returns to the ground of the high frequency power supply 1 through the chassis 21, the matching box 2, and the shielded line of the power supply line 1A.
[0055]
Here, the first series resonance frequency f as the high frequency characteristic A in the plasma chamber 75 of the present embodiment₀  Will be described.
[0056]
First series resonance frequency f₀  Measures the frequency dependence of the impedance of the plasma chamber 75, and is the minimum frequency value among the minimum values of the impedance Z, and this value is the power frequency f_e  It is set to a value in a larger range.
This first series resonance frequency f₀  Is an electrical high-frequency characteristic determined by a mechanical structure as a major factor, and is specifically measured as shown in FIGS. FIG. 4 is a schematic diagram for explaining the impedance characteristics of the plasma chamber 75, and FIG. 5 is a circuit diagram showing an equivalent circuit of FIG.
[0057]
As a measurement range in the plasma processing chamber 75, a state where the passive element of the matching circuit 2A is cut off at the output terminal position of the passive element at the final output stage is targeted. That is, as shown in FIG. 4, at the output terminal position PR of the tuning capacitor 24 connected to the power supply plate 3, the joining portion between the power supply plate 3 and the terminal of the matching circuit 2A, that is, the screwing is removed, and the matching circuit 2A is separated. The plasma chamber 75 in the closed state is set as a measurement range.
[0058]
Then, as shown by a broken line in FIG. 4, the probe 105 of the impedance measuring device (high-frequency characteristic measuring device) AN is connected to the separated output terminal position PR and the ground position of the plasma chamber 75, for example, the chassis 21. In this state, the measuring frequency at which the impedance measuring device AN oscillates is changed to, for example, a range of 1 MHz to 100 MHz, and the vector amount (Z, θ) of the impedance of the plasma chamber 75 with respect to the measuring range is measured.
As shown in FIG. 4, the probe 105 is formed by providing an insulating coating 112 on a conductive wire 110 and coating an outer conductor 111 on the insulating coating 112. The probe 105 is connected to an impedance measuring device AN through a coaxial cable. Here, in the probe 105, the conducting wire 110 is connected to the output terminal position PR, and the outer conductor 111 is connected to the ground position which is the center of the upper surface of the chassis 21.
[0059]
Next, as shown in FIG. 6, the measurement frequency f (MHz) is plotted on the same graph with the horizontal axis representing the measurement frequency f (MHz) and the impedance Z (Ω) and the phase θ (deg) plotted along the vertical axis. To draw. Here, in the figure, the vertical axis on the left side corresponds to the impedance Z (Ω), the vertical axis on the right side corresponds to the phase θ (deg), and in the graph, the solid line is the impedance characteristic curve. , And the broken line indicates the phase curve.
Then, among the frequency values corresponding to the local minimum values of the impedance characteristic curve drawn by the solid line in FIG._min  In other words, in the phase curve drawn by the broken line in FIG. 6, the frequency at which the phase θ becomes zero when the phase θ first changes from minus to plus, counting from the lower side of the measurement frequency f, First series resonance frequency f₀  Is defined as
[0060]
At this time, the measured first series resonance frequency f₀  On the other hand, as shown in FIG. 4, the following factors can be considered as the electrical high-frequency factors in the measurement range.
Inductance L of feeder plate (feeder) 3_f  And resistance R_f
Plasma electrode capacitance C between plasma excitation electrode 4 and susceptor electrode 8_e
Inductance L of shaft 13_C  And resistance R_C
Inductance L of bellows 11_B  And resistance R_B
Inductance L of chamber wall 10_A  And resistance R_A
The capacitance C between the gas introduction pipe 17 and the plasma excitation electrode 4 with the insulator 17a interposed therebetween_A
Capacitance C between plasma excitation electrode 4 and chassis 21_B
Capacitance C between plasma excitation electrode 4 and chamber wall 10_C
[0061]
These electric high-frequency factors are caused by the inductance L of the power supply plate (feeder) 3 as shown in FIG._f  And resistance R_f  Electrode capacitance C between plasma excitation electrode 4 and susceptor electrode 8_e  , The inductance L of the shaft 13_C  And resistance R_C  , The inductance L of the bellows 11_B  And resistance R_B  , The inductance L of the chamber wall 10_A  And resistance R_A  , Are connected in series in order, and the resistor R at the end thereof is connected._A  Is grounded and the resistance R_f  And plasma electrode capacitance C_e  Between the capacitor C_A  , Capacity C_B  , Capacity C_C  Are connected in parallel with one end of each of them connected to ground, and by measuring the impedance characteristics of this equivalent circuit, the first series resonance frequency f in the plasma chamber 75 is measured.₀  Can be defined.
[0062]
In the plasma chamber 75 of the present embodiment, the first series resonance frequency f thus defined₀  Is three times the power frequency f supplied from the high-frequency power supply 1._e  Set to a value in a larger range.
Here, the first series resonance frequency f₀  As a method of setting
(1) Adjust the shape (length) of the power supply plate 3.
(2) Adjust the overlap area between the plasma excitation electrode 4 and the chamber wall 10.
(3) The insulating material between the plasma excitation electrode 4 and the chamber wall 10 is adjusted.
(4) The susceptor electrode 8 and the chamber wall 10 are connected by a conductor.
And other techniques can be applied.
[0063]
For example, in the plasma chamber 75 of the present embodiment, the power frequency f_e  Is set to 40.68 MHz, the impedance Z (Ω) and the phase θ (deg) are measured with respect to the measurement frequency f (MHz) in the range of 0 to 100 MHz, and as shown in FIG. Draw the phase curve. And
3f₀    > F_e      (2)
So that the first series resonance frequency f₀  Is set as 16.5 MHz.
[0064]
In the plasma processing apparatus 71 of the present embodiment, the plasma chamber (second film forming chamber) 76 and the plasma chamber (third film forming chamber) 77 have substantially the same structure as the plasma chamber 75. The first series resonance frequency f as the high frequency characteristic A is also applied to the plasma chamber 76 and the plasma chamber 77.₀  Is set in the same manner as in the plasma chamber 75.
Specifically, in each of the plasma chambers 75, 76, 77, the power frequency f_e  Is set to 40.68 MHz, and the first series resonance frequency f₀  Is measured.
However, the first series resonance frequency f₀  Are electrical high-frequency characteristics determined by a mechanical structure as many factors, and are considered to be different for each actual machine.
[0065]
Therefore, the first series resonance frequency f with respect to the measured plasma chamber (first film formation chamber) 75₀₇₅  , The first series resonance frequency f for the plasma chamber (second film forming chamber) 76₀₇₆  , The first series resonance frequency f with respect to the plasma chamber (third deposition chamber) 77₀₇₇  Of which the maximum value f_0maxAnd the minimum value f_{0 min}For
(F_0max−f_{0 min}) / (F_0max+ F_{0 min}) (10)
, The first series resonance frequency f of the plurality of plasma chambers 75, 76, 77₀  And the value of the variation represented by the equation (10) is set to a value in a range smaller than 0.1. At this time, one series resonance frequency f₀  As a method of setting the variation of the above, methods such as the above (1) to (4) can be applied.
[0066]
When forming an amorphous silicon film, a silicon oxide film, a silicon nitride film, or the like in any of the processing chambers 75, 76, and 77 having the above-described configuration, the substrate 16 to be processed is mounted on the susceptor electrode 8, and the high-frequency The high-frequency power is applied from the power source 1 to both the high-frequency electrode 4 and the susceptor electrode 8, and a reaction gas is supplied from the gas introduction pipe 17 into the chamber 60 via the shower plate 6 to generate plasma. On the substrate 16, an amorphous silicon film, a silicon oxide film, a silicon nitride film, and the like are formed.
[0067]
As shown in FIG. 8, the laser annealing chamber 78 is provided with a laser light source 81 at an upper portion of a chamber 80, and a stage 82 for mounting the substrate 16 to be processed is provided at a lower portion in the chamber 80 in the X direction. , Y direction. Then, at the same time when the spot-shaped laser light 83 (indicated by a dashed line) is emitted from the emission part 81a of the laser light source 81, the stage 82 supporting the substrate 16 to be processed moves horizontally in the X and Y directions. Thereby, the laser beam 83 can scan the entire surface of the substrate 16 to be processed. As the laser light source 81, for example, a gas laser using a halogen gas such as XeCl, ArF, ArCl, or XeF can be used.
The configuration of the laser annealing chamber 78 may be various as long as it has a laser light source that emits laser light and can scan the entire surface of the target substrate with the spot-shaped laser light emitted from the laser light source. Can be used. In this case, a gas laser using a halogen gas such as XeCl, ArF, ArCl, or XeF can be used as the laser light source. Depending on the type of the film, another laser light source such as a YAG laser can be used, and as a form of laser light irradiation, pulse laser annealing or continuous wave laser annealing can be used. Further, as a configuration of the heat treatment chamber, for example, a multi-stage electric furnace type apparatus can be used.
[0068]
As shown in FIG. 9, the heat treatment chamber 79 is of a multi-stage electric furnace type, and has a configuration in which the substrate to be processed 18 is placed on each of the heaters 85 provided in a multi-stage in a chamber 84. . The plurality of substrates 16 to be processed are heated by energizing the heater 85. Note that a gate valve 86 is provided between the heat treatment chamber 89 and the transfer chamber 72.
[0069]
A loader cassette and an unloader cassette are detachably provided in the loader chamber 73 and the unloader chamber 74 shown in FIG. These two cassettes are capable of accommodating a plurality of substrates 16 to be processed, the loader cassette accommodates the substrate 16 before film formation, and the unloader cassette accommodates the substrate 16 after film formation. Is done. A substrate transfer robot (transfer means) 87 is installed in the transfer chamber 72 located at the center of the processing chamber unit, the loader chamber 73, and the unloader chamber 74. The substrate transfer robot 87 has an arm 88 having a telescopic link mechanism at its upper part. The arm 88 is rotatable and can be moved up and down, and the tip of the arm 88 supports and transfers the substrate 16 to be processed. It has become.
[0070]
In the plasma processing apparatus 71 having the above-described configuration, the operation of each unit is controlled by a control unit, except that an operator sets various processing conditions and a processing sequence such as a film forming condition, an annealing condition, and a heat treatment condition in each processing chamber unit. It is configured to operate automatically. Therefore, when using the plasma processing apparatus 71, the substrate 16 to be processed is set in the loader cassette, and if the operator operates the start switch, the substrate transfer robot 87 transfers the substrate 16 from the loader cassette into each processing chamber. The processing substrate 16 is transported, and after a series of processes are automatically performed sequentially in each processing chamber, the substrate 16 is stored in the unloader cassette by the substrate transport robot 87.
[0071]
In the plasma processing apparatus 71 and the inspection method thereof of the present embodiment, in each of the plurality of plasma chambers 75, 76, 77, the high frequency of each of the plasma chambers 75, 76, 77 measured from the output terminal PR of each matching circuit 2A. As the characteristic A, the first series resonance frequency f₀  Of which the maximum value f_0maxAnd the minimum value f_{0 min}Is defined as shown in the above equation (10), and by setting this value to a value within a range smaller than 0.1, the plurality of plasma chambers 75, 76, 77 are electrically and high frequency This makes it possible to eliminate the difference between the characteristics of the plurality of plasma chambers 75, 76, and 77 within a certain control width using the impedance characteristics as an index. In the chambers 75, 76, and 77, the effective power consumed in the plasma space can be made substantially uniform.
[0072]
As a result, the same process recipe is applied to the plurality of plasma chambers 75, 76, and 77 to obtain substantially the same plasma processing result. That is, for example, film formation is performed in the plurality of plasma chambers 75, 76, and 77. When performed, it is possible to obtain a film having substantially uniform film characteristics such as a film thickness, a dielectric strength voltage, and an etching rate. Specifically, by setting the value of the above-described variation to a range smaller than 0.1, the value of the variation of the film thickness can be reduced by ± 5 in the plasma chambers 75, 76, and 77 stacked under substantially the same conditions. %.
Therefore, in the plurality of plasma chambers 75, 76, and 77, the uniformity of the plasma processing in the in-plane direction of the substrate 16 to be processed due to the machine difference is prevented from being varied among the plasma chambers 75, 76, and 77. In the film forming process, it is possible to reduce the possibility that the uniformity of the in-plane direction distribution of the film thickness varies among the plasma chambers 75, 76, and 77 due to machine differences.
[0073]
At the same time, in film forming processes such as plasma CVD and sputtering, the film forming state is improved, that is, the withstand voltage of the deposited film, the etching resistance to an etchant, and the so-called “hardness” of the film, that is, the denseness of the film. This makes it possible to reduce the occurrence of variations in film characteristics such as thickness among the plasma chambers 75, 76, 77.
Here, the denseness of the film can be expressed by, for example, the erosion resistance to etching with a BHF solution and the etching resistance.
Therefore, it is possible to set the overall electrical and high-frequency characteristics of the plasma processing apparatus 71, which have not been considered in the past, and it is possible to expect the stability of plasma generation. As a result, it is possible to provide a plasma processing apparatus 71 that has high operation stability and can expect uniform operation in each of the plasma chambers 75, 76, and 77.
Thus, it is not necessary to grasp the process conditions based on the correlation between the external parameters and the processing result by the evaluation method for processing the actual substrate from the huge data for the plurality of plasma chambers 75, 76, 77. .
[0074]
Therefore, at the time of new installation or adjustment / maintenance / inspection, adjustments necessary for eliminating machine differences among the plasma chambers 75, 76, and 77, eliminating variations in processing, and obtaining substantially the same processing results with the same process recipe. The time is reduced by the first series resonance frequency f compared with the case where the inspection method based on actual film formation on the substrate 16 is adopted.₀  Can be greatly reduced by measuring. In addition, according to the inspection method of the present embodiment, the operation of the plasma processing apparatus 71 is not directly checked without evaluating the operation of the plasma processing apparatus 71 and evaluating the operation by evaluating the processed substrate. The evaluation can be performed, and the evaluation can be performed in a short time at a place where the actual machine of the plasma processing apparatus 71 is installed. Moreover, when an inspection method based on actual film formation on the substrate 16 to be processed is adopted, results for a plurality of plasma chambers 75, 76, and 77, which had to be performed separately, can be realized almost simultaneously.
For this reason, according to the inspection method of the present embodiment, it is not necessary to stop the production line for several days or weeks and check the operation of the plasma processing apparatus 71 and evaluate the operation, thereby improving the productivity of the production line. can do. In addition, it is possible to reduce costs such as the cost of the inspection board and the like required for such adjustment, the processing cost of the inspection board, and the labor cost of workers engaged in the adjustment work.
[0075]
Furthermore, in each of the plasma chambers 75, 76, 77 of the present embodiment, the first series resonance frequency f₀  Of the power frequency f_e  By setting the value in a larger range, the overall electrical high-frequency characteristics of the plasma chambers 75, 76, 77, which have not been considered in the past, can be set in appropriate ranges. As a result, the operation stability of each of the plasma chambers 75, 76, and 77 is improved, and even when a high frequency power of about 13.56 MHz or more, which has been generally used in the past, is supplied, the high frequency power supply 1 Can efficiently be introduced into the plasma generation space between the plasma excitation electrode 4 and the susceptor electrode 8. At the same time, when the same frequency is supplied, the effective power consumed in the plasma space can be increased as compared with the conventional plasma processing apparatus 71.
As a result, the processing speed can be improved by increasing the plasma excitation frequency, that is, the deposition rate can be improved when laminating films by plasma CVD or the like.
[0076]
In each of the plasma chambers 75, 76, and 77, as shown in FIG. 19, a measuring instrument (fixture) formed by connecting one end of each of a plurality of conducting wires 101a to 101h having the same impedance to the probe fixture 104. Can be used to measure the impedance characteristics of the plasma chambers 75, 76, 77.
The probe fixture 104 is formed by, for example, forming a 50 mm × 10 mm × 0.5 mm copper plate so that the fastening portion 106 and the ring portion can be formed. The ring portion has a diameter that can be fitted to the outside of the probe 105. One end of each of the conducting wires 101a to 101h is electrically connected to the probe mounting portion 104 by soldering or the like.
Terminals (crimping terminals) 102a to 102h for attachment to and detachment from the measurement objects (plasma chambers 75, 76, 77) are attached to the other ends of the conductors 101a to 101h.
When using this fixture, the ring-shaped portion 104 of the probe fixture 104 is fitted into the probe 105 and tightened by the tightening portion 106. On the other hand, the conductors 101a to 101h are detachably screwed to the measurement object at the crimp terminals 102a to 102h with screws 114 as shown in FIG.
The conductors 101a to 101h may be made of, for example, aluminum, copper, silver, or gold, or may be made by plating silver or gold with a thickness of 50 μm or more.
[0077]
A method for measuring impedance using such a measuring tool (fixture) will be described with reference to FIG.
First, in the plasma chambers 75, 76, and 77 to be measured, the high-frequency power supply 1 and the matching box 2 are removed from the plasma chambers 75, 76, and 77. The conducting wire 110 of the probe 105 of the impedance measuring instrument is connected to the power supply plate 3. Next, the crimp terminals 102a to 102h connected to the conductors 101a to 101h of the impedance measuring tool (fixture) are screwed to the housing 21 of the plasma chambers 75, 76, and 77 so as to be substantially point-symmetric about the power supply plate 3 with the screw 114. Screw it. After arranging the impedance measuring tool in this manner, a measurement signal is supplied to the conductor 110 of the impedance measuring tool, and the impedance of the path from the power supply plate 3 of the plasma chambers 75, 76, and 77 to the housing 21 via the plasma space 60 is measured. I do.
This allows the current to flow uniformly through the measurement target without restricting the size of the measurement target or the distance between the two points to be measured, which has an effect on measuring the impedance of the measurement target. By setting a residual impedance value that does not affect the measurement, it is possible to more accurately measure the impedance.
[0078]
In the present embodiment, in the plasma chambers 75, 76, and 77, the substrate 16 is mounted on the susceptor electrode side 8, and the power frequency f_e  And the first series resonance frequency f₀  However, it is also possible to cope with mounting the substrate 16 on the cathode electrode 4 side.
[0079]
Hereinafter, a second embodiment of a plasma processing apparatus, a plasma processing system, a performance confirmation system thereof, and an inspection method according to the present invention will be described with reference to the drawings.
[Second embodiment]
FIG. 10 is a sectional view showing a schematic configuration of a plasma processing apparatus 91 of the present embodiment. As shown in FIG. 10, the plasma processing apparatus 91 of the present embodiment has a configuration in which a load lock chamber 93, a heat treatment chamber 99, and processing chambers 94 and 95 are provided around a substantially rectangular transfer chamber 92. . In this apparatus, a transfer chamber 92 in which a transfer robot for transferring a substrate is installed is located at the center, and the chambers are separated by gates g1, g2, g3, and g4. The transfer chamber (standby chamber) 92, the heating chamber 99, and the other processing chamber units 94 and 95 are each evacuated to a high vacuum by a separate high vacuum pump. The load lock chamber 91 is evacuated to a low vacuum by a low vacuum pump.
[0080]
In the plasma processing apparatus 91 of the present embodiment, the constituent elements correspond to the plasma processing apparatus 71 of the first embodiment shown in FIGS. A heat treatment chamber 99 corresponds to the chamber 79, and a load lock chamber 93 corresponds to the loader chamber 73 and the unloader chamber 74, and a description of portions having substantially the same configuration will be omitted.
[0081]
The plasma processing chamber units (plasma chambers) 95 and 96 form different types of films, respectively, corresponding to the plasma processing chamber units (plasma chambers) 75 and 76 of the first embodiment shown in FIGS. Although it is possible to perform different processes such as the above, and to perform the same process using the same process recipe, they have substantially the same configuration.
As shown in FIG. 10, the plurality of plasma processing chamber units (plasma chambers) 95 and 96 are connected to an impedance measuring device (high-frequency characteristic measuring device) AN via a switch SW2 described later. At the same time, in the plurality of plasma chambers 95 and 96, the first series resonance frequency f₀  Of the maximum value f_0maxAnd the minimum value f_{0 min}The variation of
(F_0max−f_{0 min}) / (F_0max+ F_{0 min}) (10)
And this value is set to a value smaller than 0.03.
Here, the configuration of the plasma processing chamber unit 95 will be described as an example.
[0082]
FIG. 11 is a sectional view showing a schematic configuration of a plasma processing chamber unit (plasma chamber) of the present embodiment.
[0083]
The plasma processing chamber unit (plasma chamber) 95 of the present embodiment is a two-frequency excitation type plasma processing chamber, and is different from the plasma processing chamber 75 of the first embodiment shown in FIGS. And a point relating to the configuration of the measurement terminal 61 and its vicinity, and the first series resonance frequency f₀  It is a point about setting of. The other corresponding components have the same reference characters allotted, and description thereof will not be repeated.
The plasma chambers 95 and 96 of the present embodiment have the first series resonance frequency f₀  Is the power frequency f supplied from the high-frequency power source 1 to the plasma chamber 95._e  Is set to a value greater than three times of
[0084]
As shown in FIG. 11, in the plasma chamber 95 of the present embodiment, the susceptor shield 12 is provided around the susceptor electrode 8, and the gap between the wafer susceptor 8 and the susceptor shield 12 is provided around the shaft 13. It is vacuum-insulated and electrically insulated by insulating means 12C made of an electric insulator. Further, the wafer susceptor 8 and the susceptor shield 12 are configured to be vertically movable by a bellows 11. With this configuration, the distance between the plasma excitation electrode 4 and the susceptor electrode 8 can be adjusted. The susceptor electrode 8 is connected to a second high-frequency power supply 27 via a power supply plate 28 connected to the lower end of the shaft 13 and a matching circuit 25 housed inside a susceptor electrode side matching box 26 made of a conductor. ing.
These power supply plates 28 are covered with a chassis 29 connected to the lower end of the support cylinder 12B of the susceptor shield 12, and the chassis 29 is connected to the shielded wire of a power supply line 27A which is a coaxial cable and grounded together with the matching box 26. I have. As a result, the susceptor shield 12, the chassis 29, and the matching box 29 have the same DC potential.
[0085]
Here, the matching circuit 25 is intended to match the impedance between the second high-frequency power supply 27 and the susceptor electrode 8. As shown in FIG. 11, the matching circuit 25 includes a plurality of passive elements. , A tuning coil 30 and a tuning capacitor 31 are provided in series between the second high-frequency power supply 27 and the power supply plate 28, and a load capacitor 32 is connected in parallel with the tuning coil 30 and a tuning capacitor 30. One end of the load capacitor 32 is connected to a matching box. 26, and has substantially the same configuration as the matching circuit 2A. The matching box 26 is set to the ground potential via the shield line of the power supply line 27A, and at the same time, one end of the load capacitor 32 is grounded. Note that a tuning coil can be connected in series with the tuning coil 30, or a load capacitor can be provided in parallel with the load capacitor 32.
The power supply plate 28 is similar to the power supply plate 3, and the power supply plate 28 is screwed to a terminal from the matching circuit 25 and to the shaft 13.
[0086]
As shown in FIG. 11, the output terminal position PR of the tuning capacitor 24 at the output terminal position of the passive element in the final output stage of the passive elements of the matching circuit 2A, which is the measurement range of the plasma chamber 95 of this embodiment, An impedance measurement terminal (measurement terminal) 61 of the plasma chamber 95 is provided. The impedance measurement terminal 61 extends from the output terminal position PR defining the measurement range in the first embodiment to the outside of the chassis 21 by a conductor.
A switch SW1 provided between the matching circuit 2A and the power supply plate 3 as a switch for switching between the matching circuit 2A and the impedance measuring terminal 61 near the output terminal position PR of the matching circuit 2A, A switch SW2 provided between the terminal 61 and the power supply plate is provided.
[0087]
Here, the impedance characteristics from the output terminal position PR side of the matching circuit 2A when the switches SW1 and SW2 are connected to the matching circuit 2A side, and the impedance when the switches SW1 and SW2 are connected to the impedance measuring terminal 61 side. The impedance characteristic from the measurement terminal 61 side is set equal, that is, as shown in FIG. 11, the impedance Z near the switch SW1 is set.₁  And impedance Z near switch SW2₂  Are set equal.
This is because when the switch SW1 is connected to the matching circuit 2A side and the switch SW2 is opened, the impedance Z from the output terminal position PR side of the matching circuit 2A, that is, from the output terminal position PR to the branch point B to the switch SW2.₁  When the switch SW2 is connected to the impedance measurement terminal 61 and the switch SW1 is opened, the impedance Z from the impedance measurement terminal 61, that is, the branch point B from the impedance measurement terminal 61 to the switch SW1.₂  Is set equal.
[0088]
A probe of the impedance measuring device AN is detachably connected to the impedance measuring terminal 61. At the same time, as shown by a broken line in FIG. 11, this probe is detachably connected to a ground position, for example, the chassis 21 of the plasma chamber 95.
Then, as shown in FIG. 11, when the switches SW1 and SW2 are connected to the impedance measuring terminal 61 side, the impedance from the impedance measuring terminal 61 to the impedance measuring device AN is equal to that of the plasma chamber 95 and the plasma chamber 96. And are set to be equal. Specifically, the length of the coaxial cable for measurement from the impedance measuring terminal 61 to the impedance measuring device AN is set to be equal.
[0089]
In the plasma chamber 95 of the present embodiment, while the switch SW1 is closed and the switch SW2 is open, the substrate 16 to be processed is placed on the susceptor electrode 8, and the first and second high-frequency power sources 1 and 27 High-frequency power is applied to both the plasma excitation electrode 4 and the susceptor electrode 8, and a reaction gas is supplied from the gas introduction pipe 17 into the chamber 60 through the shower plate 6 to generate plasma. On the other hand, plasma processing such as film formation is performed. At this time, power having a frequency of about 13.56 MHz or more, specifically, power having a frequency of, for example, 13.56 MHz, 27.12 MHz, or 40.68 MHz is supplied from the first high-frequency power supply 1. The second high frequency power supply 27 can also supply power of a frequency equal to or different from that of the first high frequency power supply 1, for example, power of about 1.6 MHz.
[0090]
Here, the first series resonance frequency f as the high frequency characteristic A in the plasma chamber 95 of the present embodiment₀  Is measured and defined in the same manner as in the first embodiment. First series resonance frequency f of the present embodiment₀  Is specifically measured and defined as shown in FIGS.
FIG. 12 is a circuit diagram showing an equivalent circuit for measuring impedance characteristics of the plasma processing apparatus of the present embodiment of FIG.
[0091]
The measurement range of the plasma chamber 95 of the present embodiment is the state of the plasma chamber 95 viewed from the impedance measurement terminal 61. This is due to the impedance Z near the switch SW1, as shown in FIG.₁  And impedance Z near switch SW2₂  Are set equal to each other, the impedance characteristics when the plasma chamber 95 viewed from the output terminal position PR is within the measurement range are equal to the impedance characteristics.
This is different from the measurement range in the first embodiment in which the circuit had to be mechanically attached and detached in order to electrically disconnect the matching circuit 2A during the impedance measurement, as shown in FIG. 11 in the present embodiment. In addition, since the matching circuit 2A disconnected by the switch SW1 is not included in the measurement range and can be out of the measurement range, it is easy to measure the impedance characteristics of the plasma chamber CN. Then, the measurement range including the impedance measurement terminal 61 connected in series with the output terminal position PR of the tuning capacitor 24 and the matching circuit 25 connected to the susceptor electrode 8 with respect to the measurement range in the first embodiment. Range.
Here, although the high-frequency power supply 27 is shown in the figure, it does not indicate a power supply state but mainly indicates a ground state of the matching circuit 25. This is because the impedance characteristics cannot be measured in the power supply state.
[0092]
Here, compared with the measurement range in the first embodiment, the switch SW2 is added. This is because the switch SW1 is in a closed state during plasma emission, that is, the contribution of the switch SW1 to the impedance characteristic exists. Corresponding to that. That is, the impedance Z near the switch SW1₁  Impedance Z equal to₂  The above-described measurement range including the vicinity of the switch SW2 having the above-described configuration allows the measurement range of the plasma chamber 95 viewed from the impedance measurement terminal 61 to be close to a circuit state in which a high-frequency current flows when plasma is actually emitted. Can be further improved.
[0093]
Then, the probe 105 of the impedance measuring device AN is connected to the impedance measuring terminal 61 and the ground position, for example, the chassis 21 of the plasma chamber 95. In this state, the switch SW2 is closed and the switch SW1 is set to the open state, and the oscillation frequency of the impedance measuring device AN is changed to, for example, a range of 1 MHz to 100 MHz, so that the measurement range of the plasma chamber 95 with respect to the measurement range is changed. The vector quantity (Z, θ) of the impedance is measured.
[0094]
Next, as shown in FIG. 13, the measurement frequency f (MHz) is plotted on the same graph with the horizontal axis representing the measurement frequency f (MHz) and the impedance Z (Ω) and the phase θ (deg) plotted along the vertical axis. Here, in the figure, the vertical axis on the left side is impedance Z (Ω), and the vertical axis on the right side corresponds to phase θ (deg). Of the drawn impedance characteristic curve (solid line) and phase curve (dashed line), the impedance minimum value Z_min  , That is, the frequency at which the phase θ becomes zero when the phase θ first changes from minus to plus, counting from the lower side of the measurement frequency f, is the first series resonance frequency f₀  Is defined as
[0095]
At this time, the measured first series resonance frequency f₀  On the other hand, as shown in FIG. 12, the following factors can be considered as the electrical high-frequency factors in the measurement range.
Inductance L of switch SW2_SWAnd resistance R_SW
Inductance L of feeder plate (feeder) 3_f  And resistance R_f
Plasma electrode capacitance C between plasma excitation electrode 4 and susceptor electrode 8_e
Contribution from matching circuit 25
Capacitance C between susceptor electrode 8 and susceptor shield 12_S
Inductance L of support cylinder 12B of susceptor shield 12_C  And resistance R_C
Inductance L of bellows 11_B  And resistance R_B
Inductance L of chamber wall 10_A  And resistance R_A
The capacitance C between the gas introduction pipe 17 and the plasma excitation electrode 4 with the insulator 17a interposed therebetween_A
Capacitance C between plasma excitation electrode 4 and chassis 21_B
Capacitance C between plasma excitation electrode 4 and chamber wall 10_C
[0096]
As shown in FIG. 12, assuming that these electric high-frequency factors can be regarded as the same as a circuit in which a high-frequency current supplied during plasma emission flows, as shown in FIG._SWAnd resistance R_SW, Feeding plate (feeder) 3 inductance L_f  And resistance R_f  Electrode capacitance C between plasma excitation electrode 4 and susceptor electrode 8_e  , The capacitance C between the susceptor electrode 8 and the susceptor shield 12_S  , The inductance L of the support cylinder 12B of the susceptor shield 12_C  And resistance R_C  , The inductance L of the bellows 11_B  And resistance R_B  , The inductance L of the chamber wall 10_A  And resistance R_A  , Are connected in series in order, and the resistor R at the end thereof is connected._A  Is grounded and the resistance R_f  And plasma electrode capacitance C_e  And a capacitor C connected in parallel with one end grounded._A  , Capacity C_B  , Capacity C_C  Form an equivalent circuit, and by measuring the impedance characteristic of this equivalent circuit, the first series resonance frequency f₀  Can be defined.
[0097]
The first series resonance frequency f thus defined₀  Is the power frequency f supplied from the high frequency power supply 1_e  Is set to a value in a range larger than three times.
Here, the first series resonance frequency f₀  As a method of setting
(1) The shape and length of the power supply plate 3 are changed.
(2) The overlap area between the plasma excitation electrode 4 and the chamber wall 10 is reduced.
(3) The insulating material between the plasma excitation electrode 4 and the chamber wall 10 is made thicker.
{Circle around (4)} Adjust such as connecting the susceptor electrode 8 and the chamber wall 10 with a conductor.
And other techniques can be applied.
[0098]
For example, in the plasma processing apparatus of the present embodiment, the power frequency f_e  Is set to 40.68 MHz, the impedance Z (Ω) and the phase θ (deg) are measured with respect to the measurement frequency f (MHz) in the range of 0 to 150 MHz, and as shown in FIG. Draw the phase curve. And
f₀  > 3f_e            (4)
So that the first series resonance frequency f₀  Is set as 123.78 MHz.
[0099]
In the present embodiment, the plasma electrode capacitance C between the plasma excitation electrode 4 and the susceptor electrode 8_e  Series resonance frequency f defined by₀′ With the power frequency f_e  Is set to a value in a range larger than three times.
f₀’> 3f_e            (5)
Here, the series resonance frequency f₀′ Is the first series resonance frequency f₀′, Is defined as the impedance characteristic between the plasma excitation electrode 4 and the susceptor electrode 8 in the same manner as the measurement of the impedance characteristic.
That is, one end of the susceptor electrode 8 is grounded, the impedance characteristic is measured from one end of the plasma excitation electrode 8, and when the phase θ changes from minus to plus first when counting from the lower side of the measurement frequency f, the phase The frequency at which θ becomes zero is determined by the series resonance frequency f₀’.
Series resonance frequency f₀'Is an electrical high-frequency characteristic defined by the mechanical shape of the plasma excitation electrode 4 and the susceptor electrode 8, and the plasma electrode capacitance C between the plasma excitation electrode 4 and the susceptor electrode 8._e  Is a value proportional to the reciprocal of the square root of. Thereby, since the frequency characteristics of the electrodes 4 and 8 for directly emitting plasma can be defined, power can be more effectively supplied to the plasma emission space, and the power consumption efficiency can be further improved or the processing can be improved. It is possible to improve the efficiency.
[0100]
Furthermore, in the present embodiment, the plasma electrode capacitance C between the plasma excitation electrode 4 and the susceptor electrode 8_e  Series resonance frequency f defined by₀′ With the power frequency f_e  Is set so as to satisfy the relationship represented by the above equation (1).
[0101]
FIG. 14 is a schematic diagram showing a state between electrodes in a plasma light emitting state.
As shown in FIG. 14, the distance between the opposing parallel plate type plasma excitation electrode 4 and the susceptor electrode 8 is d, and the distance between the electrodes 4 and 8 in the direction of the distance between the electrodes 4 and 8 is set at the time of light emission. Let the sum of the distances to the plasma be δ. That is, the distance between the plasma emission region P and the plasma excitation electrode 4 that can be visually observed during plasma emission and where plasma emission is not performed is δ._a  , The distance between the plasma emission region P and the susceptor electrode 8 where no plasma emission occurs is δ_b  Where δ is the sum of these as shown in equation (6).
δ_a  + Δ_b  = Δ (6)
Here, from the distance d between the electrodes 4 and 8 and the sum δ of the distance between the electrodes 4 and 8 where the plasma does not emit light, the model capacitance between the electrodes 4 and 8 in the plasma emission state is actually obtained. C₀Is required.
[0102]
The parallel plate electrodes 4 and 8 at the time of plasma emission can be regarded as if the distance between the electrodes 4 and 8 was δ because the plasma emission region P between them can be regarded as a conductor. As a result, the capacitance C between the parallel plate electrodes 4 and 8 during plasma emission is obtained.₀"Is inversely proportional to the distance between the electrodes 4 and 8, so that the capacitance C₀  However, when plasma emission is performed, the apparent value becomes d / δ times.
C₀  ∝ 1 / d
C₀∝ 1 / δ (7)
∴C₀∝ ∝ d / δ · C₀
[0103]
And the series resonance frequency f₀’Is the capacity C₀  Is proportional to the reciprocal of the square root of the series resonance frequency.₀"Is capacity C₀Is proportional to the reciprocal of the square root of ", that is, proportional to the reciprocal of the square root of d / δ.
f₀’√ 1 / √C₀
f₀∝ √ 1 / √C₀(8)
∴f₀∝ (d / δ)^-1/2・ F₀’
[0104]
The series resonance frequency f between the electrodes 4 and 8 during this plasma emission₀And the power frequency f_e  With the first series resonance frequency f₀  And power frequency f_e  Set as the relationship with
f₀"> F_e            (9)
Rewriting equation (9) by equation (8) gives equation (1).
(Equation 1)

The series resonance frequency f₀'And the power frequency f_e  Satisfies the relationship represented by Expression (1), whereby the model capacitance C at the time of the plasma emission described above is obtained.₀Series resonance frequency f₀And the series resonance frequency f defined by the capacitance between the electrodes 4 and 8 during non-plasma emission.₀′ Can be set. Therefore, the series resonance frequency f₀′ Is the reciprocal of the square root of d / δ is the power frequency f_e  Is set to be larger than that, the series resonance frequency f of the electrodes 4 and 8 during plasma emission is set.₀’To the power frequency f_e  To improve power consumption efficiency during plasma emission.
[0105]
Further, in the plasma processing apparatus 91 of the present embodiment, the plasma chamber 96 has substantially the same structure as the plasma chamber 95. The first series resonance frequency f is also applied to the plasma chamber 96.₀  Is set in the same manner as in the plasma chamber 95.
Specifically, in each of the plasma chambers 95 and 96, the power frequency f_e  Is set to 40.68 MHz, and the first series resonance frequency f₀  Is measured. However, the first series resonance frequency f₀  Are electrical high-frequency characteristics determined by a mechanical structure as many factors, and are considered to be different for each actual machine.
[0106]
Thus, the measured first series resonance frequency f₀₉₅  , The first series resonance frequency f for the plasma processing chamber 96₀₉₆  Of which the maximum value f_0maxAnd the minimum value f_{0 min}For
(F_0max−f_{0 min}) / (F_0max+ F_{0 min}) (10)
The first series resonance frequency f of the plurality of plasma chambers 95 and 96 as shown in FIG.₀  And this value is set to a value smaller than 0.03. At this time, one series resonance frequency f₀  As a method of setting the variation of the above, methods such as the above (1) to (4) can be applied.
[0107]
In the present embodiment, a high-frequency characteristic measuring device AN is connected to the measurement terminals 61 of the plasma chambers 95 and 96 so as to be switchable. This is because the switches SW1 and SW2 are switched so that the connection between the measuring terminals 61 and 61 and the high-frequency characteristic measuring device AN is disconnected from the plasma chambers 95 and 96 during non-measurement, that is, when plasma is generated. Electrical effects acting on the high-frequency measuring device AN can be prevented. Thus, high-frequency characteristics of the plurality of plasma chambers 95 and 96 can be measured using a single impedance measuring device AN. Thus, the high-frequency characteristics A, especially the first series resonance frequency f, by measuring the impedance and the like can be obtained only by switching the switches SW1 and SW2 without detaching the connection between the plasma chambers 95 and 96 and the high-frequency characteristic measuring device AN.₀  Can be easily measured.
[0108]
In the present embodiment, the high-frequency characteristic A (impedance Z) between the branch point B near the measurement position and the high-frequency characteristic measuring device AN via the measurement terminal 61 and the switch SW2 in the plasma chambers 95 and 96 is used. ) Are set equally. Specifically, the impedance Z of the measurement range including the vicinity of the switch SW2 from the branch point B near the final stage on the output side of the matching circuit 2A of each of the plasma chambers 95 and 96 is included.₂  The length of the coaxial cable from the switch SW2 to the high-frequency characteristic measuring device AN is set to be equal.
[0109]
The plasma processing apparatus 91 having the above configuration opens the gate g0, carries the substrate 16 into the load lock chamber 93, closes the gate g0, and exhausts the load lock chamber 93 with a low vacuum pump. The gates g1 and g2 are opened and the substrate 16 carried into the load lock chamber 93 is moved to the heat treatment chamber 99 by the transfer arm of the transfer robot in the transfer chamber 92, and the gates g1 and g2 are closed to close the transfer chamber 92. The heat treatment chamber 99 is evacuated by a high vacuum pump. Next, the substrate 16 is subjected to a heat treatment, and after completion, the gates g2 and g4 are opened, and the heat-treated substrate 16 is moved to the plasma chamber 95 by the transfer arm of the transfer robot in the transfer chamber 92. The substrate 16 in the plasma chamber 95 is subjected to a reaction process, and after completion, the gates g4 and g3 are opened, and the processed substrate 16 is moved to the plasma chamber 96 by the transfer arm of the transfer robot in the transfer chamber 92. After the substrate 16 in the plasma chamber 96 is subjected to the reaction processing, the gates g3 and g1 are opened after the completion, and the substrate 16 is moved to the load lock chamber 93 by the transfer arm of the transfer robot in the transfer chamber 92.
[0110]
At this time, for example, the operation of each unit is controlled by the control unit except that the operator sets the processing conditions such as the film forming conditions in each processing chamber and the processing sequence. Therefore, when using the plasma processing apparatus 91, the substrate 16 to be processed is set in the loader cassette of the load lock chamber 93, and if the operator operates the start switch, each substrate 16 is transferred from the loader cassette by the substrate transfer robot. The substrate 16 to be processed is transferred into the processing chamber, and after a series of processing is automatically performed sequentially in each processing chamber, the substrate 16 is stored in an unloader cassette (loader cassette) by a substrate transfer robot.
[0111]
In the plasma chambers 95 and 96 having the above-described configuration, similarly to the first embodiment, the processing target substrate 16 is mounted on the susceptor electrode 8, and the high-frequency power is supplied to both the high-frequency electrode 4 and the susceptor electrode 8 from the high-frequency power supply 1. And a reaction gas is supplied from the gas introduction pipe 17 into the chamber 60 through the shower plate 6 to generate plasma, and an amorphous silicon film, a silicon oxide film, a silicon nitride film, etc. are formed on the substrate 16 to be processed. Form a film.
[0112]
In the plasma processing apparatus 91 and the inspection method thereof according to the present embodiment, the same effects as those of the first embodiment are obtained, and the first series resonance frequency f in each of the plasma chambers 95 and 96 is obtained.₀  Is set to a value smaller than 0.03, it is possible to eliminate a mechanical difference in electrical high-frequency characteristics such as impedance and resonance frequency characteristics for the plurality of plasma chambers 95 and 96. This makes it possible to set the states of a plurality of plasma chambers within a certain control width using the impedance characteristic as an index. Therefore, in each of the plasma chambers 95 and 96, the effective amount consumed in the plasma space is reduced. The power and the like can be made substantially uniform.
As a result, the same process recipe is applied to the plurality of plasma chambers 95 and 96 to obtain substantially the same plasma processing result. That is, for example, when film formation is performed in the plurality of plasma chambers, Thus, it is possible to obtain a film having substantially uniform film characteristics such as a dielectric strength voltage and an etching rate. Specifically, by setting the value of the above-mentioned variation to a range smaller than 0.03, the value of the variation of the film thickness is kept within a range of ± 2% in the plasma chambers laminated under substantially the same conditions. be able to.
[0113]
Further, in the plasma processing apparatus 91 of the present embodiment, an impedance measurement terminal (measurement terminal) 61 is provided at the output terminal position PR of the matching circuit 2A of the plurality of plasma chambers 95 and 96, and the measurement terminal 61 is connected to the impedance measurement terminal 61. The impedance measuring device AN is detachably connected and the switches SW1 and SW2 are provided so that when measuring the impedance characteristics of the plurality of plasma chambers 95 and 96, the impedance measuring device AN and the matching circuit are connected to the plasma chambers 95 and 96 as in the first embodiment. It is not necessary to attach and detach the power supply line and the matching circuit 2A to disconnect the power supply line 2A from the matching circuit 2A. Therefore, probing when measuring the impedance characteristics of the plasma chambers 95 and 96 can be easily performed, and the first series resonance frequency f₀  The work efficiency at the time of measurement can be improved.
[0114]
Further, the impedance Z in the plurality of plasma chambers 95 and 96 is determined.₁  And impedance Z₂  Are set equal to each other, the switches SW1 and SW2 can be installed in the individual plasma chambers 95 and 96 without attaching and detaching the plasma chambers 95 and 96 and the matching circuit 2A and without attaching and detaching the impedance measurement probe 105. Measurement of impedance characteristics and first series resonance frequency f only by switching₀  And the switching between the operation state of the plasma processing apparatus, that is, the plasma generation state, can be easily performed.
Here, the measurement of the impedance characteristic and the first series resonance frequency f₀  In the measurement, the plurality of plasma chambers 95 and 96 can be sequentially switched only by switching the switches SW1 and SW2, and the first series resonance frequency f₀  The work efficiency at the time of measurement can be improved.
[0115]
At the same time, in the plasma processing apparatus 91 and the inspection method thereof of the present embodiment, in the plasma chambers 95 and 96, the branch point B near the measurement position and the high-frequency characteristic measurement device AN via the measurement terminal 61 and the switch SW2 are connected. , The high-frequency characteristics A (impedance Z) are set equal to each other, so that the impedance measurement values from the impedance measuring device AN connected to the individual impedance measuring terminals 61 are supplied to the matching circuits in the plurality of plasma chambers 95 and 96. Since it can be regarded as equivalent to the value measured from the output position PR of the final stage on the 2A output side, the first series resonance frequency f₀Is unnecessary in each of the plasma chambers 95 and 96, conversion of actual measurement values is not required, work efficiency is improved, and the first series resonance frequency f₀Can be measured more accurately.
Further, in the plurality of plasma chambers 95 and 96, the series resonance frequency f₀’And power frequency f_e  Since the frequency characteristics of the electrodes 4 and 8 for directly emitting plasma can be defined in the respective plasma chambers 95 and 96 by setting the values of と and と, the power can be more effectively supplied to the plasma emission space. This makes it possible to further improve the power consumption efficiency or the processing efficiency of the entire plasma processing apparatus 91 of the present embodiment.
[0116]
In this embodiment, the two switches SW1 and SW2 are provided. However, the impedance from the branch point B to the output terminal position PR and the impedance from the branch point B to the probe may be set equal. These switches can be switched by one switch.
Further, as shown in FIG. 16, a configuration may be adopted in which the switch SW2 of each of the plasma chambers 95 and 96 is shared, and a single switch SW4 for switching the plasma chamber to be measured at the time of measurement is provided.
[0117]
Further, in the present embodiment, the power frequency f_e  And the first series resonance frequency f₀  Is set, but it is also possible to cope with setting the frequency for the susceptor electrode side 8. In this case, as shown by PR 'in FIG. 11, the output terminal position of the matching circuit 25 that defines the impedance measurement range can be set.
Further, instead of the type having the parallel plate type electrodes 4 and 8, a plasma processing apparatus such as an inductively coupled plasma (ICP) inductively coupled plasma excitation type, a radial line slot antenna (RLSA) or a radial line slot antenna type, or an RIE ( The present invention can also be applied to a processing apparatus for reactive ion etching (reactive ion etching).
By attaching a target material instead of the electrodes 4 and 8, sputtering can be performed as plasma processing.
[0118]
Hereinafter, a third embodiment of a plasma processing apparatus, a plasma processing system, a performance confirmation system thereof, and an inspection method according to the present invention will be described with reference to the drawings.
[Third embodiment]
FIG. 15 is a schematic diagram showing a schematic configuration of the plasma processing system of the present embodiment.
[0119]
The plasma processing system of the present embodiment includes a plasma processing apparatus 71, 71 'substantially equivalent to the first embodiment shown in FIG. 1, and a plasma processing apparatus 91 substantially equivalent to the second embodiment shown in FIG. , In combination. Components corresponding to those of the first and second embodiments described above are denoted by the same reference numerals, and description thereof is omitted.
[0120]
As shown in FIG. 15, the plasma processing system of this embodiment includes a plasma processing apparatus 71 having three plasma processing chamber units (plasma chambers) 95, 96, and 97, two plasma processing chamber units (plasma chamber) 95, A plasma processing apparatus 91 having 96 and a plasma processing apparatus 71 'having three plasma processing chamber units (plasma chambers) 95, 96, and 97 constitute a part of a production line.
Here, in the part of the plasma processing apparatus 71, 71 ′ of the first embodiment shown in FIG. 1, the plasma processing chamber units (plasma chambers) 75, 76, 77 are replaced with the second embodiment shown in FIG. Has three plasma processing chamber units substantially equivalent to the two-frequency excitation type plasma processing chamber unit (plasma chamber) 95, and these plasma processing chamber units (plasma chambers) 95, 96, and 97 are substantially the same. The structure is.
[0121]
In the plasma processing system of this embodiment, as shown in FIG. 15, the impedance measuring terminals 61 of the plasma chambers 95, 96, and 97 are connected to the impedance measuring device AN via the switch SW3. The switch SW3 connects only the plasma chambers 95, 96, 97 to be measured and the impedance measuring device AN when measuring the plasma chambers 95, 96, 97, and disconnects the other plasma chambers 95, 96, 97. It is provided as a switch for switching. The length of the coaxial cable for measurement is set to be equal so that the impedance from the measurement terminal 61 to the switch SW3 is equal for each of the plasma chambers 95, 96, and 97. A probe of the impedance measuring device AN is detachably connected to the impedance measuring terminal 61 in the same manner as in the second embodiment shown in FIG.
[0122]
Here, the first series resonance frequency f in each of the plasma chambers 95, 96, and 97 of the present embodiment.₀  Is measured in the same manner as in the second embodiment by switching the switch SW3, and the power frequency f is set to, for example, 40.68 MHz._e  For
f₀  > 3f_e            (4)
So that the first series resonance frequency f₀  Is set as 123.78 MHz.
[0123]
Then, the first series resonance frequency f with respect to the measured plasma chambers 95, 96, 97₀  Of which the maximum value f_0maxAnd the minimum value f_{0 min}For
(F_0max−f_{0 min}) / (F_0max+ F_{0 min}) (10)
The first series resonance frequency f of the plurality of plasma chambers 95, 96, 97 as shown in FIG.₀  , And this value is set to a value smaller than 0.03 as in the second embodiment.
Further, in the present embodiment, the plasma electrode capacitance C between the plasma excitation electrode 4 and the susceptor electrode 8 is the same as in the second embodiment._e  Series resonance frequency f defined by₀′ With the power frequency f_e  Is set to a value in a range larger than three times.
f₀’> 3f_e            (5)
At the same time, in the present embodiment, the plasma electrode capacitance C between the plasma excitation electrode 4 and the susceptor electrode 8_e  Series resonance frequency f defined by₀′ With the power frequency f_e  On the other hand, as in the second embodiment, the series resonance frequency f₀’Is the power frequency f_e  (The distance d between the electrodes / the distance δ of the plasma non-light emitting portion) can be set to be larger than the square root.
[0124]
In the plasma processing system of the present embodiment, for example, a film formation process is performed on the substrate 16 that has been subjected to the pre-plasma processing in the plasma chambers 95, 96, and 97 of the plasma processing apparatus 71. A heat treatment is performed, and thereafter, an annealing treatment is performed in a laser annealing chamber 78. Next, the target substrate 16 is carried out of the plasma processing apparatus 71, and the second and third film forming processes are sequentially performed on the target substrate 16 in a plasma processing chamber of an apparatus (not shown) equivalent to the plasma processing apparatus 71.
Next, a photoresist is formed on the target substrate 16 carried out of the plasma processing apparatus by a photolithography process in another processing apparatus (not shown).
Then, the substrate 16 to be processed is carried into the plasma processing apparatus 91, plasma etching is performed in the plasma chambers 95 and 96, and then the substrate 16 is carried out of the plasma processing apparatus 91, and is equivalent to the plasma processing apparatus 91 (not shown). In the plasma chamber of the above apparatus, a film formation process is performed on the substrate 16 to be processed.
Next, the resist is peeled off from the processing target substrate 16 unloaded from the plasma processing apparatus (not shown) in another processing apparatus (not shown), and patterning is newly performed by a photolithography process.
Finally, first, second, and third film forming processes are sequentially performed on the substrate 16 in the plasma chambers 95, 96, and 97 of the plasma processing apparatus 71 ', and the substrate 16 is subjected to post-plasma processing. The steps in the plasma processing system of the present embodiment in the feed and production line are completed.
[0125]
In the plasma processing system and the inspection method therefor according to this embodiment, the same effects as those of the first and second embodiments can be obtained, and the first series resonance frequency f of the plasma chambers 95, 96, 97 can be obtained.₀  Of which the maximum value f_0maxAnd the minimum value f_{0 min}Is set to a value within a range smaller than 0.03, the plurality of plasma processing apparatuses 71, 91, and 71 'have electrical high-frequency characteristics for each of the plasma chambers 95, 96, and 97, respectively. Since it is possible to eliminate the difference, it is possible to set the states of the plurality of plasma chambers 95, 96, and 97 within a certain control width using the impedance characteristic as an index in the entire plasma processing system. In the plasma chambers 95, 96, and 97 described above, the generated plasma density and the like can be made substantially uniform.
[0126]
As a result, the same process recipe is applied to the plurality of plasma chambers 95, 96, and 97 in the entire plasma processing system to obtain substantially the same plasma processing result, that is, the plurality of plasma chambers 95, 96, and 97 are obtained. For example, when a film is formed, it is possible to obtain a film having substantially uniform film characteristics such as a film thickness, a dielectric strength voltage, and an etching rate. Specifically, by setting the value of the above-mentioned variation to a range smaller than 0.03, the value of the variation of the film thickness can be reduced by ± 2 in the plasma chambers 95, 96, and 97 which are stacked under substantially the same conditions. %.
For this reason, it is possible to set overall electrical and high-frequency characteristics of the plasma processing system that have not been considered in the past, and it is possible to expect the stability of plasma generation in the individual plasma chambers 95, 96, and 97. As a result, it is possible to provide a plasma processing system that has high operation stability and can expect uniform operation in each of the plasma chambers 95, 96, and 97.
As a result, the process conditions can be grasped based on the correlation between the external parameters and the processing results obtained by an evaluation method for processing an actual substrate from a vast amount of data for a larger number of plasma chambers 95, 96, and 97 than a single plasma processing apparatus. Can be unnecessary.
[0127]
Therefore, according to the plasma processing system and the inspection method thereof of the present embodiment, at the time of new installation, adjustment, maintenance, and inspection, there is no machine difference for each of the plasma chambers 95, 96, and 97, thereby eliminating processing variations. In the plasma chambers 95, 96, and 97, the adjustment time required to obtain substantially the same processing result by the same process recipe is longer than that in the case where the inspection method by actual film formation on the processing target substrate 16 is adopted. First series resonance frequency f₀  Can be greatly reduced by measuring. Moreover, instead of a two-stage method of confirming the operation of the plasma processing system and evaluating the operation by evaluating the processed substrate, the evaluation of the plasma processing system is performed directly, and the actual plasma processing system is installed. It can be performed in a short time in a certain place. In addition, when an inspection method based on actual film formation on the substrate 16 to be processed is adopted, results for a plurality of plasma chambers 95, 96, and 97 that had to be performed separately can be realized almost simultaneously.
For this reason, it is not necessary to stop the production line for several days or weeks and check the operation of the plasma processing system and evaluate the operation, thereby improving the productivity of the production line. In addition, it is possible to reduce costs such as the cost of the inspection board and the like required for such adjustment, the processing cost of the inspection board, and the labor cost of workers engaged in the adjustment work.
[0128]
Further, in the plasma processing system of the present embodiment, the first series resonance frequency f of each of the plasma chambers 95, 96, 97₀  With the power frequency f_e  By setting the value in a range larger than three times of the above, the electrical high-frequency characteristics of the plurality of plasma chambers 95, 96, and 97, which have not been considered in the past, can be collectively brought into an appropriate range. . Thereby, the operation stability is improved, and even if a high frequency power of about 13.56 MHz or more, which has been generally used in the past, is applied, the high frequency power is supplied to all the plasma chambers 95, 96, 97. The power from the power supply 1 can be efficiently introduced into the plasma generation space between the plasma excitation electrode 4 and the susceptor electrode 8. At the same time, when the same frequency is supplied, the effective power consumed in the plasma space can be improved in all the plasma chambers 95, 96, and 97 as compared with the conventional plasma processing system. As a result, to improve the processing speed by increasing the plasma excitation frequency of the entire plasma processing system, that is, when laminating films by plasma CVD or the like in all the plasma chambers 95, 96, and 97, The deposition rate can be improved. At the same time, in all the plasma chambers 95, 96, and 97, the stability of plasma generation can be expected. As a result, the operation stability of each of the plasma processing apparatuses 71, 91, and 71 'is high, and at the same time, the operation as a whole is stable. It is possible to provide a highly efficient plasma processing system. In addition, these can be simultaneously realized in the plurality of plasma chambers 95, 96, 97.
[0129]
Therefore, in the plurality of plasma chambers 95, 96, and 97, the uniformity of the plasma processing in the in-plane direction of the processing target substrate 16 can be improved by increasing the plasma density. It is possible to improve the uniformity of the distribution in the in-plane direction of the film. At the same time, due to the increase in plasma density, in film forming processes such as plasma CVD and sputtering, the film forming state is improved, that is, the withstand voltage of the deposited film, the etching resistance to etching, and the so-called “hardness of the film” That is, it is possible to improve the film characteristics such as the denseness of the film.
[0130]
Further, when the same frequency is supplied, the density of generated plasma can be increased as compared with the conventional plasma processing system, so that the power consumption efficiency of the plasma processing system as a whole is improved, and the same processing speed or film thickness is obtained. In order to obtain characteristics, less input power is required than before. Moreover, these can be realized in the plurality of plasma chambers 95, 96, 97. Therefore, it is possible to further reduce the power loss of the entire plasma processing system, reduce the running cost, and improve the productivity. At the same time, the processing time can be further reduced, and the power consumption required for the plasma processing can be reduced, so that the total amount of carbon dioxide, which is an environmental load, can be further reduced.
[0131]
In the plasma processing system according to the present embodiment, the series resonance frequency f of each of the plasma chambers 95, 96, 97₀'And the power frequency f_e  Since the frequency characteristics of the electrodes 4 and 8 for directly emitting plasma can be defined by setting the values of と and と, power is more effectively applied to the plasma emission spaces of the plasma chambers 95, 96 and 97. This makes it possible to further improve the power consumption efficiency or the processing efficiency of the entire plasma processing system.
[0132]
In the plasma processing system of this embodiment, an impedance measuring terminal 61 is provided at the output terminal position PR of the matching circuit 2A of each of the plasma chambers 95, 96, and 97, and a single impedance measuring device is provided at the impedance measuring terminal 61. The AN is switchably connected by the switch SW3, and the switches SW1 and SW2 are provided, so that when measuring the impedance characteristics of each of the plasma chambers 95, 96, and 97 of the plasma processing system, the plasma chamber is changed as in the first embodiment. There is no need to attach / detach the power supply line and the matching circuit 2A to separate the 95 from the matching circuit 2A. Further, the impedance characteristics and the resonance frequency characteristics of the plurality of plasma chambers 95, 96, 97 can be measured by a single impedance measuring device AN.
[0133]
Therefore, probing when measuring the impedance characteristics of the plasma chambers 95, 96, and 97 can be easily performed, and the first series resonance frequency f₀  The work efficiency at the time of measurement can be improved. Further, the impedance characteristics can be measured and the first series resonance frequency can be measured only by switching the switches SW1 and SW2 without attaching / detaching the plasma chambers 95, 96/97 and the matching circuit 2A, and without attaching / detaching the impedance measuring probe 105. f₀  Can be easily measured.
[0134]
Further, switches SW1 and SW2 are provided so that these impedances Z₁  And impedance Z₂  And at the same time, the impedance from the measurement terminal 61 to the switch SW3 is set to be equal for each of the plasma chambers 95, 96, and 97 in the plurality of plasma processing apparatuses 71, 71 ', and 91. By simply switching the switches SW1, SW2, and SW3, the impedance measurement value from the impedance measurement device AN connected to the impedance measurement terminal 61 is regarded as equivalent to the value measured from the output position PR of the final stage on the output side of the matching circuit 2A. be able to.
At the same time, there is no need to consider the difference in impedance characteristics from the measurement terminal 61 to the switch SW3 with respect to the impedance characteristics of each of the plasma chambers 95, 96, and 97, so that the plasma chambers 95 in the plurality of plasma processing apparatuses 71, 71 ', and 91 do not need to be considered. , 96, 97 for the first series resonance frequency f₀Is unnecessary, the conversion of the actual measurement value is unnecessary, the work efficiency in setting the electrical high-frequency characteristics of the plasma processing system is improved, and the first series resonance frequency f₀Can be measured more accurately.
[0135]
In the present embodiment, the switching operation of each of the plasma chambers 95, 96, and 97 for which the switches SW1, SW2, and SW3 are to be measured can be linked, and the configuration of the two switches SW1 and SW2 is changed. , The impedance from the branch point to the output terminal position PR and the impedance from the branch point to the probe may be set as one switch.
[0136]
Further, in each of the above embodiments of the present invention, the power frequency f for the plasma excitation electrode 4 of each of the plasma chambers 95, 96, and 97 is set._e  And the first series resonance frequency f₀  Is set, but it is also possible to cope with setting the frequency for the susceptor electrode side 8. In this case, as shown by PR 'in FIG. 11, the output terminal position of the matching circuit 25 that defines the impedance measurement range can be set.
Furthermore, instead of the type having the parallel plate type electrodes 4 and 8, a plasma processing apparatus such as an inductively coupled plasma (ICP) inductively coupled plasma excitation type, a radial line slot antenna (RLSA) or a radial line slot antenna type, or an RIE ( The present invention can also be applied to a processing apparatus for reactive ion etching (reactive ion etching).
[0137]
In each of the above embodiments, as shown in FIG. 16, a matching circuit 2A and a high-frequency power source 1 are provided corresponding to the plasma chambers (plasma processing chamber units) 95, 96, and 97, respectively. The impedance measuring device AN is connected to the connection position of the matching circuit 2A in the plasma chambers 95, 96, and 97 via the SW4. However, as shown in FIG. , 2A, and 2A are connected to the same high-frequency power supply 1 by switching, or as shown in FIG. 18, individual plasma chambers 95, 96, and 97 are connected to the same matching circuit 2A by switching. Other configurations are also possible. In this case, as shown in FIG. 17, an impedance measuring device AN is connected via SW4 to a connection position between the plasma chambers 95, 96, and 97 and the matching circuit 2A.
[0138]
In each of the above embodiments, the first series resonance frequency f₀  Was set as in the above equation (10). In addition to the above, as the high frequency characteristics A, a resonance frequency f, an impedance Z at the frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or Either of the reactances X at the frequency of the high-frequency power can be adopted and can be set as in the above equation (10A). As a result, a plurality of plasma chambers 95, 96, and 97 can be set within a certain management width using each characteristic as an index, so that it is possible to eliminate a difference in electrical high-frequency characteristics. In each of the plasma chambers 95, 96, and 97, the effective power consumed in the plasma space can be made substantially uniform.
Here, when the impedance Z is adopted as the high-frequency characteristic A, since the impedance Z is a value at the frequency of plasma excitation, a parameter that can be grasped only by measuring the frequency dependency between Z and θ. It is not necessary to observe the frequency dependence of the high frequency characteristics of the plasma chambers 95, 96, and 97 for the resonance frequency f, which is easier to grasp than the resonance frequency f. Further, it is possible to more directly grasp the electrical high-frequency characteristics of the plasma chambers 95, 96, 97 at the frequency at which the plasma is excited.
Further, when the resistance R and the reactance X are adopted, the impedance at the frequency at which the plasma of the plasma chamber is excited is more directly compared with the case where the impedance Z which is the vector amount of the resistance R and the reactance X is observed. Electrical high frequency characteristics can be captured.
[0139]
Hereinafter, a fourth embodiment of the plasma processing apparatus, the plasma processing system, and the inspection method according to the present invention will be described with reference to the drawings.
[Fourth embodiment]
FIG. 23 is a sectional view showing a schematic configuration of a plasma processing unit (plasma chamber) of the present embodiment.
It should be noted that the present embodiment is different from the first to third embodiments only in the point relating to the measurement range of the frequency characteristic, the point relating to the measurement terminal and the switch, and the portion of the plasma processing chamber unit (plasma chamber). The configuration as a plasma processing apparatus or the configuration as a plasma processing system is based on the first to third embodiments. The other components substantially the same as those of the first to third embodiments are denoted by the same reference numerals, and description thereof is omitted.
[0140]
In the present embodiment, the configuration of the plasma chamber is a two-frequency excitation type similar to that of the second embodiment, and a measurement position that defines a measurement range for measuring the high frequency characteristic A as indicated by PR3 in FIG. However, in each of the plasma chambers 75, 76, 77, 95, 96, and 97, when a high-frequency power is supplied, an input of a matching circuit 2A connected to the high-frequency power supply 1 via a high-frequency power supply body (feeding line) 1A. Set to terminal position. At the input end position PR3, there are provided a measuring terminal 61 for measuring the high frequency characteristic A of the plasma chamber, and a connection line 61A which is a coaxial cable connecting the measuring terminal 61 and the high frequency characteristic measuring device. A switch SW5 for switching the connection to the plasma chamber between the power supply line 1A and the high-frequency characteristic measuring device (impedance measuring device) AN at the time of measuring the high frequency characteristics and generating the plasma is connected.
Here, the impedance from the measurement position PR3 switched by the switch SW5 to the high-frequency power supply 14 via the power supply line 1A and the impedance from the measurement position PR3 to the high-frequency power supply 14 via the power supply line 1A are set to be equal. . Specifically, the lengths of the power supply line 1A and the connection line 61A are set to be equal. Thus, similarly to the second embodiment, the high-frequency characteristics A, particularly the first series resonance frequency f, obtained by measuring the impedance and the like can be obtained only by switching the switch SW5 without disconnecting the connection between the plasma chamber and the high-frequency characteristics measuring device AN.₀  Can be easily measured.
[0141]
Here, the first series resonance frequency f as the high frequency characteristic A in the plasma chamber of the present embodiment₀  Is measured and defined in the same manner as in the first to third embodiments. First series resonance frequency f of the present embodiment₀  Is specifically measured and defined as shown in FIGS.
FIG. 24 is a schematic diagram for explaining the impedance characteristics of the plasma chamber of the present embodiment in FIG. FIG. 25 is a circuit diagram showing an equivalent circuit for measuring the impedance characteristic of the plasma chamber of this embodiment of FIG.
[0142]
In the present embodiment, the first series resonance frequency f₀  On the other hand, as shown in FIG. 24, the following factors can be considered as the electrical high-frequency factors in the measurement range.
Contribution from connection line 61A
Inductance L of switch SW5_SWAnd resistance R_SW
Contribution from matching circuit 2A
Inductance L of feeder plate (feeder) 3_f  And resistance R_f
Plasma electrode capacitance C between plasma excitation electrode 4 and susceptor electrode 8_e
Capacitance C between susceptor electrode 8 and susceptor shield 12_S
Inductance L of support cylinder 12B of susceptor shield 12_C  And resistance R_C
Inductance L of bellows 11_B  And resistance R_B
Inductance L of chamber wall 10_A  And resistance R_A
Capacitance C between the gas introduction tube 17 and the plasma excitation electrode 4 sandwiching the insulator 17a_A
Capacitance C between plasma excitation electrode 4 and chassis 21_B
Capacitance C between plasma excitation electrode 4 and chamber wall 10_C
[0143]
As shown in FIG. 25, assuming that these electrical high-frequency factors can be regarded as the same as a circuit in which a high-frequency current supplied during plasma emission flows, the contribution from the connection line 61A and the inductance L of the switch SW2_SWAnd resistance R_SW, Contribution from matching circuit 2A, inductance L of feeder plate (feeder) 3_f  And resistance R_f  Electrode capacitance C between plasma excitation electrode 4 and susceptor electrode 8_e  , The capacitance C between the susceptor electrode 8 and the susceptor shield 12_S  , The inductance L of the support cylinder 12B of the susceptor shield 12_C  And resistance R_C  , The inductance L of the bellows 11_B  And resistance R_B  , The inductance L of the chamber wall 10_A  And resistance R_A  , Are connected in series in order, and the resistor R at the end thereof is connected._A  Is grounded and the resistance R_f  And plasma electrode capacitance C_e  And a capacitor C connected in parallel with one end grounded._A  , Capacity C_B  , Capacity C_C  Form an equivalent circuit, and by measuring the impedance characteristic of this equivalent circuit, the first series resonance frequency f₀  Can be defined.
[0144]
The first series resonance frequency f thus defined₀  Are set in the same manner as in the above-described first to third embodiments. Then, the first series resonance frequency f for each plasma chamber₀₅, F₀₆Of which the maximum value f_0maxAnd the minimum value f_{0 min}In contrast, the first series resonance frequency f of the plurality of plasma chambers₀  And this value is set to a value smaller than 0.03. At this time, one series resonance frequency f₀  As a method of setting the variation of the above, methods such as the above-mentioned (1) to (4) can be applied, and in addition to this, for example,
(5) Select a load capacitor 22 with uniform characteristics
(6) Select a tuning capacitor 24 with uniform characteristics
(7) Adjust the shape (thickness, number of turns, length) of the tuning coil 23
And other techniques can be applied.
[0145]
The plasma processing apparatus, the plasma processing system, and the inspection method according to the present embodiment have the same effects as those of the first to third embodiments, and have a plasma processing chamber as compared with the case where the matching circuit 2A is not included in the measurement range. It is possible to eliminate the difference in electrical and high-frequency characteristics for a plurality of plasma chambers 75, 76, 77, 95, 96, and 97 including not only the matching circuit 2A but also the individual plasma chambers 75. , 76, 77, 95, 96, and 97, the uniformity of the effective power consumed in the plasma space can be improved, and the same process recipe is applied thereto, and the matching circuit 2A is included in the measurement range. Compared to the case without the above, it is possible to obtain a plasma processing result having substantially the same identity.
[0146]
Furthermore, in the present embodiment, since the length of the feeder line 1A and the length of the connection line 61A are set to be equal, the switch SW5 cuts off the electrical connection between the measurement position PR3 and the high-frequency measuring instrument AN and matches the matching circuit. When the electrical connection between the 2A side and the high-frequency power supply 1 side is secured, the high-frequency power supply 1 has the high-frequency characteristic A when the measurement range is from the output terminal position PR2 to the plasma chamber side and the switch SW5 and the measurement position PR3 and the high-frequency measurement. The high-frequency characteristics A of the plasma chamber measured at the output terminal position of the high-frequency measuring device AN when the electrical connection with the high-frequency power supply 1 and the matching circuit 2A are cut off while ensuring the electrical connection with the device AN are equal. Is set.
Accordingly, in the present embodiment, as shown in FIGS. 23, 24, and 25, the high-frequency power supply 1 (A power supply line) 1A connected to the high-frequency power supply 1 when the high-frequency power is supplied. At the measurement position PR2, which is a side end, it is possible to measure high-frequency characteristics equivalent to the case where each high-frequency characteristic A of the plasma chamber is measured. By setting the measurement range in this way, compared to the case where the measurement range does not include the matching circuit 2A and the high-frequency power feeder 1A, not only the plasma processing chamber 60 but also the matching circuit 2A and the high-frequency power feeder (feed line) ) It is possible to eliminate the difference in electrical high-frequency characteristics for a plurality of plasma chambers 75, 76, 77, 95, 96, and 97 including 1A, and the individual plasma chambers 75, 76, 77, and 95 can be eliminated. , 96, and 97, the uniformity of the effective power consumed in the plasma space can be further improved, and the same process recipe is applied to the matching circuit 2A and the high-frequency power feeder (power supply) in the measurement range. As compared with the case where the electric wire 1A is not included, it is possible to obtain a plasma treatment result with a substantially higher degree of identity.
[0147]
As shown in FIGS. 2 and 11, also in the first to third embodiments, the measurement range is set such that the measurement range is closer to the chamber 60 from the measurement position PR3, and the chamber is shifted from the measurement position PR2 as in this embodiment. It is possible to set as 60 side.
[0148]
Hereinafter, another embodiment of the performance checking system of the plasma processing apparatus or the plasma processing system according to the present invention will be described with reference to the drawings. In the following description, the purchase orderer is simply called the orderer, and the sales and maintenance person is simply called the maintenance person.
FIG. 26 is a system configuration diagram of the plasma processing apparatus or the performance confirmation system of the plasma processing system of the present embodiment.
[0149]
In this figure, reference numerals C1, C2,... Represent client computers (hereinafter simply referred to as clients), S represents a server computer (performance status information providing means, hereinafter simply referred to as a server), and D represents a database computer (reference information). N is a public line. The clients C1, C2,..., The server S, and the database D are connected to each other via a public line N as shown in FIG.
[0150]
Each of the clients C1, C2,... Has a function (communication function) of communicating with the server S using a communication protocol (TCP / IP or the like) of the Internet which is widely and widely used. The client C1 (orderer-side information terminal) is a computer for confirming, via the public line N, the performance status of the plasma processing apparatus or the plasma chamber of the plasma processing system ordered by the orderer from the maintenance person. It has a function of browsing the “plasma chamber performance information providing page” held by the server S as an information providing page (Web page) (plasma chamber performance status information browsing function). Further, the client C2 (maintenance person side information terminal) transmits the "first series resonance frequency f" which is a part of the "performance status information" by the maintenance person.₀  The "information" is uploaded to the server S, and the e-mail sent from the orderer is received via the client C1.
Here, the plasma processing apparatus or the plasma processing system has a configuration according to the above-described first to fourth embodiments, has a configuration including a plasma processing unit (plasma chamber) similar to these, and has the number of chambers and the like. The configuration conditions can be set arbitrarily.
[0151]
The communication function of the server S is realized by a modem when the public line N is an analog line, and is realized by a dedicated terminal adapter or the like when the public line N is a digital line such as ISDN (Integrated Services Digital Network). . The server S is a computer for providing performance status information, and transmits the performance status information to the client C1 using a communication protocol of the Internet in response to the browsing request received from the client C1. Here, when the above-mentioned orderer is delivered from the maintenance person to the plasma processing apparatus, a separate “view-only password” for browsing the performance status information is provided from the maintenance person to each orderer. Has become. The server S is configured to transmit the operation / maintenance status information of the performance status information to the client C1 only when the legitimate browse-only password is provided.
[0152]
Here, although the specific details will be described later, the “performance status information” is information on the type of the plasma processing apparatus or the plasma chamber in the plasma processing system sold by the maintenance person, and the quality performance information as a specification for each model. , And information on parameters indicating the quality performance of each delivered actual machine, and these parameters, maintenance history information, and the like.
Of these, the history information of the quality performance, parameters, and maintenance in each actual machine can be viewed only by the orderer provided with the “view-only password”.
[0153]
The “performance status information” is provided to the server S by the maintenance person or the orderer and indicates “operation / maintenance status information” indicating the actual operation / maintenance status, and is stored in the database D and not purchased as a catalog. And "performance reference information" that can be browsed by the client. "Performance standard information" is used by maintenance personnel to objectively describe the performance of the plasma processing performed by each plasma chamber, and predicts the state of film formation in film formation processes such as plasma CVD and sputtering. It is possible.
[0154]
In the present embodiment, these “performance reference information” are stored in the database D.
In response to the browsing request for the “performance status information” received from the client C1, the server S obtains the necessary “performance reference information” by searching the database D and places an order as a “performance status information providing page”. Is transmitted to the client C1 of the other party. Similarly, in response to a request for browsing the “performance status information” received from the orderer provided with the “browsing-only password”, the server S searches the database D for the necessary “performance reference information”. At the same time, the "performance reference information" is combined with the "operation and maintenance status information" provided by the maintenance person via the client C2 to form the "performance status information", and the "performance status information providing page" It is configured to transmit to the client C1 of the orderer.
[0155]
The database D is for storing “performance reference information” constituting such “performance status information” for each type of the plasma processing apparatus or the plasma chamber of the plasma processing system. The “performance reference information” is read out and transferred to the server S according to. Although only one server S is shown in FIG. 26, in the present embodiment, the versatile “performance reference information” can be shared by a plurality of servers managed by a maintenance person from a plurality of locations. Further, "performance reference information" is stored in a database D separate from these servers.
[0156]
Next, the operation of the thus-configured plasma processing apparatus or the performance confirmation system of the plasma processing system will be described in detail with reference to the flowchart shown in FIG. This flowchart shows the process of providing the “performance status information” in the server S.
[0157]
Usually, the maintenance person should present “performance status information”, particularly “performance reference information” of each plasma chamber in a plasma processing apparatus or a plasma processing system to be sold to an unspecified orderer as an index at the time of purchase. Become. On the other hand, the orderer can grasp what performance, that is, what kind of plasma processing is possible in the plasma chamber CN based on the “performance reference information”.
[0158]
In addition, the maintenance person presents "performance reference information" as an index when using, out of "performance status information" of the plasma processing apparatus or the plasma chamber in the plasma processing system delivered to a specific orderer, The “operation maintenance status information” is presented as an operation state parameter. On the other hand, the orderer as a user confirms the operation of each plasma chamber in the plasma processing apparatus or plasma processing system by comparing "performance standard information" and "operation maintenance status information" and recognizes the necessity of maintenance. In addition, the state of the plasma processing state can be grasped.
[0159]
For example, an orderer who wants to purchase a plasma processing apparatus or a plasma processing system from a maintenance person accesses the server S and obtains the “performance” of the plasma processing apparatus or the plasma processing system that he or she wants to purchase as follows. The entity of "situation information" can be easily confirmed.
[0160]
First, when the orderer tries to access, a display request is transmitted from the client C1 to the server S based on the preset IP address of the server S. On the other hand, upon receiving the display request (step S1), the server S transmits the catalog page CP to the client C1 (step S2).
FIG. 28 is an example of the main page CP transmitted from the server S to the client C1 in this manner. The catalog page CP includes model selection buttons K1, K2, K3, K4... For displaying “performance reference information” of the “performance status information” for each of a large number of models sold by the maintenance person, and As shown in the figure, a customer user button K4 for requesting display of a customer user screen used by an orderer who has delivered the plasma processing apparatus or the plasma processing system from a maintenance person is provided.
[0161]
For example, the orderer selects and specifies a model of the plasma processing apparatus or the plasma processing system by using a pointing device (for example, a mouse) provided in the client C1, and then selects one of the model selection buttons K1 to K4. When specified, this instruction is transmitted to the server S as a display request for “performance reference information” of the “performance status information”.
[0162]
Upon receiving this display request (step S3), the server S transmits, to the client C1, a subpage corresponding to the information requested to be displayed among the selected models. That is, when the display of the “performance reference information” is requested (A), the server S specifies the selected model as shown in FIG. Data such as "temperature performance", "plasma processing chamber electrical performance" and the like, and the data of the variation values of each parameter for each plasma processing apparatus or plasma processing system in these data are obtained, and the specification page CP1 in which these are published Is transmitted to the client C1 (step S4).
[0163]
As shown in FIG. 29, the specification page CP1 includes a model type K6 indicating the selected model, a vacuum performance display field K7, a supply / exhaust performance display field K8, a temperature performance display field K9, and a plasma processing chamber electrical performance display field. K10. These correspond to the “performance standard information” in the selected type of plasma chamber.
In the vacuum performance display column K7,
Ultimate vacuum 1 × 10^-4Pa or less
Operating pressure 30-300Pa
In the supply / exhaust performance display column K8,

In the temperature performance display column K9,
Heater setting temperature 200 ~ 350 ± 10 ℃
Chamber setting temperature 60 ~ 80 ± 2.0 ℃
Items are described.
Here, SCCM (standard cubic centimeters per minute) represents a gas flow rate when converted to a standard state (0 ° C., 1013 hPa), and is expressed in cm.³/ Min.
[0164]
For each of the parameters P, the variation of each plasma chamber in each plasma processing apparatus or plasma processing system is represented by the maximum value P of the parameters P._maxAnd the minimum value P_minIs calculated by the following equation (10B).
(P_max-P_min) / (P_max+ P_min) (10B)
The setting range of each of these variation values in each plasma processing apparatus or plasma processing system is displayed for each parameter item.
[0165]
Further, the first series resonance frequency f described in the first to fourth embodiments is displayed in the plasma processing chamber electric performance display column K10.₀  And the setting range and power frequency f_e  Is described. In addition, the power frequency f_e  , The resistance R and the reactance X of the plasma chamber, and the plasma capacitance C between the plasma excitation electrode 4 and the susceptor electrode 8.₀  Loss capacitance C between the plasma excitation electrode 4 and each part of the plasma chamber that is set to the ground potential_X  Etc. are described. In addition, the specification page CP1 states the statement of performance assurance that "when the plasma processing apparatus or plasma processing system is delivered, it is guaranteed that each parameter value is within the setting range described on this page." Is done.
[0166]
As a result, the overall electrical high-frequency characteristics of the plasma processing apparatus or the plasma processing system and the variation in the electrical characteristics of the plasma chamber, which have not been considered in the related art, can be presented as new indices at the time of purchase. . In the client C1 or the client C2, by outputting the performance status information to a printer or the like and making a hard copy, it is possible to output the performance status information as a catalog or a specification describing the content of the performance status information. Further, the first series resonance frequency f₀  , Resistance R, Actance X, Capacity C₀  , C_X  By presenting the values of the above and the wording of the performance assurance to the terminal, catalog or specification of the client C1..., The orderer judges the performance of the plasma chamber CN so as to examine the electric components, and receives the It becomes possible to purchase.
[0167]
Note that, after completing the transmission of the subpage to the client C1 and not receiving the disconnection request from the client C1 (step S5), the server S waits for a display request for the next subpage. (Step S3) On the other hand, when the connection release request is received from the client C1 (Step S5), the communication with the client C1 is terminated.
[0168]
In addition, the orderer who has delivered the plasma processing apparatus or the plasma processing system from the maintenance person accesses the server S, and obtains the “performance status of the plasma processing apparatus or the plasma chamber in the plasma processing system purchased by the orderer as follows. The substance of "information" can be easily confirmed.
When the purchaser concludes the sales contract with the maintenance person, the customer will be able to respond individually to the orderer, as well as the model number of the purchased plasma processing device or plasma processing system and the model number of each plasma chamber. The maintenance person provides the user ID and the individual “user-specific password (browsing-only password)” for browsing the “operation and maintenance status information” of the plasma processing apparatus or the plasma processing system and the respective plasma chambers to each orderer. It is supposed to be. The server S is configured to transmit the “operation and maintenance status information” to the client C1 only when the authorized browsing-only password is provided.
[0169]
First, when the orderer attempts to access, the orderer transmits a request for displaying a customer user screen to the server S by designating the customer user button K5 on the above-described catalog page CP.
On the other hand, when the server S receives the display request (step S3-B), the server S transmits a sub-page to the client C1 as an input request for prompting the orderer to input a “browsing-only password” (step S3-B). Step S6). FIG. 30 shows a customer user page CP2. The customer user page CP2 includes a customer user ID input field K11 and a password input field K12.
[0170]
Since the customer user page CP2 as the input request is displayed on the client C1, the orderer can identify the plasma processing apparatus or the plasma processing system and each of the plasma chambers in response to the input request. The "browsing-only password" provided by the maintenance person is input to the client C1 together with the "customer user ID".
Here, the orderer inputs the customer code ID and the password in the customer user ID input field K11 and the password input field K12 shown in FIG. 30, respectively. Only when the formal "customer user ID" and the "browsing-only password" are received from the client C1 (step S7), the server S sub-parts the "operation and maintenance status information" associated with the "browsing-only password" in advance. The page is transmitted to the client C1 (step S9).
[0171]
That is, the viewing of the “operation maintenance status information” is permitted only to the specific orderer who has concluded the purchase contract of the plasma processing apparatus or the plasma processing system, that is, only those who can know the authorized “view-only password”. Therefore, even if a third party other than the orderer accesses the server S, the "operation and maintenance status information" cannot be browsed. Usually, the maintenance person simultaneously concludes a delivery contract with a large number of orderers and simultaneously delivers a plurality of plasma processing apparatuses or plasma processing systems to each orderer at the same time. Since a different "read-only password" is provided for each orderer and for each plasma processing apparatus or plasma processing system and each plasma chamber thereof, each orderer is required to provide a password for each plasma processing apparatus or plasma processing system. For each of the plasma chambers, it is possible to individually browse the “operation and maintenance status information” associated with the “browse-only password” provided to the user.
[0172]
Therefore, it is possible to reliably prevent the confidential information relating to the delivery from leaking between the orderers, and even when a plurality of plasma processing apparatuses or plasma processing systems are delivered, each of the plasma processing apparatuses or the plasma processing systems. The system and each of its plasma chambers can be individually identifiable. Note that, when the formal browsing password is not received (step S7), the server S transmits a connection disapproval message to the client C1 (step S8), and sends the browsing password again to the orderer. Prompt for input. If the orderer erroneously inputs the “browsing-only password”, the “operating maintenance status information” can be viewed by making a formal input at this opportunity.
[0173]
When the ID and the password are confirmed (step S7), the server S reads the subpage corresponding to the information requested to be displayed from the database D and transmits it to the client C1. That is, the server S designates the model when the display of the “performance reference information” and the “operation maintenance status information” for the individual plasma processing apparatus or the plasma processing system identified by the user ID and the respective plasma chambers is requested. As a result, data such as "vacuum performance", "supply / exhaust performance", "temperature performance", and "plasma processing chamber electrical performance" are acquired from the database D, and the published specification page CP3 is transmitted to the client C1 (step S9). ).
[0174]
FIG. 31 is a sub-page CP3 of “operation and maintenance status information” transmitted from the server S to the client C1 in this manner. On the maintenance history page CP3, as shown in FIG. 31, a lot number display K13 indicating a delivered plasma processing apparatus or plasma processing system and a machine number of each plasma chamber, a vacuum performance display column K7, a supply / exhaust performance display A column K8, a temperature performance display column K9, a plasma processing chamber electrical performance display column K10, and a vacuum performance maintenance column K14, a supply / exhaust performance maintenance column K15, a temperature performance maintenance column K16, and a plasma processing chamber electrical performance maintenance column K17. ing. These correspond to the "dynamic performance standard information" and "operation and maintenance status information" of the delivered actual machine, respectively.
In the vacuum performance display column K7 and the vacuum performance maintenance column K14,
Ultimate vacuum 1.3 × 10^-5Pa or less
Operating pressure 200Pa
In the supply / exhaust performance display column K8 and the supply / exhaust performance maintenance column K15,

In the temperature performance display column K9 and the temperature performance maintenance column K16,
Heater set temperature 302.3 ± 4.9 ° C
Chamber setting temperature 80.1 ± 2.1 ℃
Items are described.
[0175]
For each of the parameters P, the variation of each plasma chamber in each plasma processing apparatus or plasma processing system is represented by the maximum value P of the parameters P._maxAnd the minimum value P_minIs calculated by the following equation (10B).
(P_max-P_min) / (P_max+ P_min) (10B)
The setting range of each of these variation values in each plasma processing apparatus or plasma processing system is displayed for each parameter item.
[0176]
Further, on this sub-page CP3, a “details” button K18 for displaying a maintenance column for each plasma chamber is provided for each of the maintenance history columns K14, K15, K16, and K17. Can be viewed.
[0177]
When the orderer makes a display request in the detail column, a maintenance detail page CP4 in which detailed information of the maintenance history is described is transmitted from the database D to the client C1.
[0178]
FIG. 32 is a sub-page CP4 of “detailed maintenance information” transmitted from the server S to the client C1 in this manner.
The figure shows the electrical performance maintenance page.
As shown in FIG. 32, the maintenance history page CP3 displays a delivered plasma processing apparatus or plasma processing system, a lot number display K13 indicating a machine number of each plasma chamber, and a selected maintenance column. . Here, as each maintenance column, the value at the time of maintenance of the parameter P corresponding to each plasma chamber and the value of the variation of these parameters P are stored in the plasma processing apparatus or the plasma processing system, and in each plasma chamber. Displayed for each lot number.
[0179]
Further, as described in the first to fourth embodiments, the first series resonance frequency f is displayed in the plasma processing chamber electrical performance display column K10 and the plasma processing chamber electrical performance maintenance column K17.₀  And the setting range and power frequency f_e  Is described. In addition, the power frequency f_e  , The resistance R and the actance X of the plasma chamber, and the plasma capacitance C between the plasma excitation electrode 4 and the susceptor electrode 8.₀  , The loss capacitance C between the plasma excitation electrode 4 and each part set to the ground potential of the plasma chamber_X  Etc. are described.
[0180]
At the same time, data such as "vacuum performance", "supply / exhaust performance", "temperature performance", and "electrical performance of the plasma processing chamber" are acquired from the database D as "performance reference information", as shown in FIGS. 31 and 32. , By displaying on the maintenance history page CP3 and the maintenance detail page CP4 together with the “operation and maintenance status information”, the “operation and maintenance status information” can be browsed by referring to the “performance reference information”. The orderer confirms the "performance reference information" as an index when using the "performance status information" of the delivered plasma processing apparatus or plasma processing system and the plasma chamber, and also displays the "operation maintenance status information" in the operating state. Can be considered as a parameter indicating At the same time, by comparing the “performance reference information” with the “operation maintenance status information”, the operation of the plasma processing apparatus or the plasma processing system and the plasma chamber is confirmed, and the necessity of maintenance is recognized. The state can be grasped.
[0181]
If the server S does not receive a connection release request from the client C1 after completing the transmission of the subpages CP3 and CP4 to the client C1 (step S5), the server S transmits a connection disapproval message to the client C1. (Step S8), and then input the "browse-only password" to the orderer again, or wait for a display request for the next subpage (step S3), while receiving a disconnection request from the client C1. In this case (step S5), the communication with the client C1 ends.
[0182]
In the performance check system of the plasma processing apparatus or the plasma processing system according to the present embodiment, the purchaser can view performance status information indicating the operating performance status of the plasma processing apparatus or the plasma processing system ordered by the sales and maintenance person via a public line. A purchase orderer side information terminal, a sales maintainer side information terminal to which the sales maintainer uploads the performance status information, and a sales maintainer side information terminal in response to the request of the purchase orderer side information terminal. And a performance status information providing means for providing the performance status information uploaded from the PC to the purchaser's side information terminal, further comprising: the first serial resonance frequency f₀  In addition to this parameter, the value of the variation for each plasma chamber in each plasma processing apparatus or plasma processing system is included, and the performance status information is output as a catalog or a specification, so that the sales and maintenance person can By enabling the purchaser to view the uploaded performance status information including the performance reference information and the operation maintenance status information of the plasma processing apparatus or the plasma processing system and the plasma processing system from the information terminal via a public line. , Information to be used as a criterion at the time of purchase can be transmitted to the orderer, and the operating performance and maintenance information for each plasma processing apparatus or system and its plasma chamber can be easily provided during use. It is possible to do.
Further, as described above, the performance status information includes the first series resonance frequency f as a performance parameter for the plasma chamber.₀  By including the values of the variations and the values of the variations, it is possible to provide performance determination material for the plasma processing apparatus or the plasma processing system of the orderer and to make an appropriate determination at the time of purchase. Further, the performance status information can be output as a catalog or a specification.
[0183]
[Example]
According to the present invention, the first series resonance frequency f₀  The variation in film characteristics during film formation was measured by setting the value of the variation within a certain range.
[0184]
Here, the plasma processing apparatus actually used has two plasma chambers as shown in the second embodiment, and these plasma processing chambers are of a two-frequency excitation type.
In the plasma processing apparatus used, the size of the parallel plate type electrodes 4 and 8 was set to 25 cm square, the interval between these electrodes was set to 15 mm, the power was 800 W, and the power frequency f_e  Was set to 40.68 MHz.
[0185]
(Example 1)
In the above-described plasma processing apparatus, the first series resonance frequency f₀  The maximum value f of_0maxAnd the minimum value f_{0 min}Is set to 0.09 according to equation (10). At the same time, these first series resonance frequencies f₀  Is set to 43 MHz.
(Example 2)
In the above plasma processing apparatus, as the second embodiment, the first series resonance frequency f₀  The maximum value f of_0maxAnd the minimum value f_{0 min}Is set to 0.02 according to equation (10). At the same time, these first series resonance frequencies f₀  Is set to 43 MHz.
(Comparative example)
In the above plasma processing apparatus, as a comparative example 1, the first series resonance frequency f₀  The maximum value f of_0maxAnd the minimum value f_{0 min}Is set to 0.11 according to equation (10). At the same time, these first series resonance frequencies f₀  Is set to 43 MHz.
[0186]
In the above Examples 1 and 2 and Comparative Example, the same process recipe was applied as an evaluation for the Example and Comparative Example, a silicon nitride film was deposited, and the film thickness variation for each plasma processing chamber was measured as follows. .
(1) SiN on a glass substrate by plasma CVD_x  A film is formed.
(2) The resist is patterned by photolithography.
▲ 3 ▼ SF₆  And O₂  Using SiN_x  Dry etch the film.
▲ 4 ▼ O₂  The resist is removed by ashing.
(5) SiN_x  The thickness difference of the film is measured by a stylus type step meter.
{Circle around (6)} The deposition rate is calculated from the film formation time and the film thickness.
{Circle around (7)} The in-film uniformity is measured at 16 points on a 6-inch glass substrate surface.
[0187]
Here, the conditions at the time of film formation are as follows:
Substrate temperature 350 ° C
SiH₄    40sccm
NH₃    200sccm
N₂    600sccm
Deposition speed About 200 nm / min
It is.
Table 1 shows the results.
[0188]
[Table 1]

[0189]
From these results, the first series resonance frequency f₀  It can be seen that when the value of the variation is set, the variation in the film thickness due to the machine difference for each plasma chamber is improved.
That is, the first series resonance frequency f₀  By setting this value, the operating characteristics of the plasma processing apparatus are improved.
[0190]
【The invention's effect】
According to the plasma processing apparatus, the plasma processing system, the performance confirmation system, and the inspection method of the present invention, the first series resonance frequency f as a high frequency characteristic in a plurality of plasma processing chamber units (plasma chambers).₀  By setting the value of the variation such as, it is possible to obtain substantially the same plasma processing by the same process recipe without machine differences for each plasma processing chamber, and to increase the processing speed by increasing the plasma excitation frequency, Plasma processing apparatus and plasma capable of improving uniformity of plasma processing in the in-plane direction of a substrate to be processed, film characteristics in film formation, power consumption efficiency, and productivity and easily maintaining an appropriate operation state The effect of being able to provide a processing system, and it is possible to provide performance determination information for the plasma processing apparatus or the plasma processing system of the orderer at the time of purchase, and further, the performance status information can be provided in a catalog or specification This has the effect of being able to output as
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing a first embodiment of a plasma processing apparatus according to the present invention.
FIG. 2 is a sectional view showing the plasma chamber in FIG. 1;
FIG. 3 is a schematic diagram showing a matching circuit of the plasma chamber in FIG. 2;
FIG. 4 is a schematic diagram for explaining impedance characteristics of the plasma chamber in FIG. 1;
FIG. 5 is a circuit diagram showing an equivalent circuit of the plasma chamber in FIG. 4;
FIG. 6 shows a first series resonance frequency f₀  6 is a graph showing frequency dependence characteristics of impedance Z and phase θ for explaining the following.
FIG. 7 is a first series resonance frequency f of the plasma chamber in the first embodiment of the plasma processing apparatus according to the present invention;₀  6 is a graph showing frequency dependence characteristics of impedance Z and phase θ.
FIG. 8 is a vertical sectional view showing a laser annealing chamber in FIG. 1;
FIG. 9 is a longitudinal sectional view showing the heat treatment chamber in FIG. 1;
FIG. 10 is a schematic configuration diagram showing a second embodiment of the plasma processing apparatus according to the present invention.
FIG. 11 is a sectional view showing the plasma chamber in FIG. 10;
FIG. 12 is a circuit diagram showing an equivalent circuit of the plasma chamber in FIG. 11;
FIG. 13 shows a first series resonance frequency f in the second embodiment of the plasma processing apparatus according to the present invention.₀  6 is a graph showing frequency dependence characteristics of impedance Z and phase θ.
FIG. 14 is a schematic diagram showing a state between electrodes in a plasma emission state.
FIG. 15 is a schematic configuration diagram showing a third embodiment of the plasma processing system according to the present invention.
FIG. 16 is a schematic configuration diagram showing another embodiment of the plasma processing apparatus according to the present invention.
FIG. 17 is a schematic configuration diagram showing another embodiment of the plasma processing apparatus according to the present invention.
FIG. 18 is a schematic configuration diagram showing another embodiment of the plasma processing apparatus according to the present invention.
FIG. 19 is a perspective view showing a probe of the impedance measuring instrument.
FIG. 20 is a schematic diagram showing a connection state of a probe of the impedance measuring device of FIG. 19;
FIG. 21 is a schematic diagram illustrating an example of a conventional plasma processing apparatus.
FIG. 22 is a schematic view showing another example of a conventional plasma processing apparatus.
FIG. 23 is a sectional view showing a schematic configuration of a plasma processing unit (plasma chamber) in a fourth embodiment of the plasma processing system according to the present invention.
FIG. 24 is a schematic diagram for explaining impedance characteristics of the plasma chamber in FIG. 23;
FIG. 25 is a circuit diagram showing an equivalent circuit for measuring impedance characteristics of the plasma chamber of FIG. 24;
FIG. 26 is a system configuration diagram showing a performance confirmation system of the plasma processing apparatus of the present invention.
FIG. 27 is a flowchart showing a process of providing performance status information of a server S according to the performance confirmation system for a plasma processing apparatus of the present invention.
FIG. 28 is a plan view showing a configuration of a main page CP related to the performance check system of the plasma processing apparatus of the present invention.
FIG. 29 is a plan view showing a configuration of a subpage CP1 according to the performance check system of the plasma processing apparatus of the present invention.
FIG. 30 is a plan view showing a configuration of a main page CP2 according to the performance check system of the plasma processing apparatus of the present invention.
FIG. 31 is a plan view showing a configuration of a subpage CP3 related to the performance check system of the plasma processing apparatus of the present invention.
FIG. 32 is a plan view showing a configuration of a subpage CP4 related to the performance check system of the plasma processing apparatus of the present invention.
[Explanation of symbols]
1. High frequency power supply
1A, 27A ... power supply line
2,26… Matching box
2A, 25 ... matching circuit
3, 28 ... Power supply board
4: Plasma excitation electrode (cathode electrode)
5. Shower plate
6… space
7 ... hole
8. Wafer susceptor (susceptor electrode)
9 ... insulator
10: chamber wall
10A: Chamber bottom
11 ... Bellows
12 ... Susceptor shield
12A ... Shield support plate
12B ... Support tube
13 ... Shaft
16 Substrate (substrate to be processed)
17 ... Gas inlet pipe
17a, 17b ... insulator
21, 29… Chassis
22, 32 ... load capacitor
23, 30 ... coil
24, 31 ... Tuning capacitor
27 ... second high frequency power supply
60: chamber chamber (plasma processing chamber)
61: Impedance measurement terminal (measurement terminal)
71, 91: Plasma processing apparatus
72, 92 ... Transfer chamber
73 ... Loader room
74 ... Unloader room
75, 76, 77, 95, 96, 97 ... plasma chamber (plasma processing unit)
78 ... Laser annealing chamber
79, 99… Heat treatment room
80, 84 ... chamber
81 ... Laser light source
82 ... Stage
83 ... Laser light
85 ... heater
86 ... Gate valve
87: substrate transfer robot (transfer means)
88 ... arm
93… Load lock room
105 ... probe
AN: Impedance measuring device (high-frequency characteristic measuring device)
B ... Branch point
P: Plasma emission region
PR, PR ', PR2, PR3 ... output terminal positions
SW1, SW2, SW3, SW4, SW5 ... switch
g0, g1, g2, g3, g4 ... gate

Claims (27)

A plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, an input terminal and an output terminal, wherein the high-frequency power supply is connected to the input terminal, and the electrode A plasma processing chamber unit including a plurality of plasma processing chamber units each including: a matching circuit that obtains impedance matching between the plasma processing chamber and the high-frequency power supply by connecting a high-frequency power distribution body connected to the output terminal to the output terminal. hand,
In each of the plasma processing chamber units, at the time of non-plasma emission, the plurality of plasmas measured at a measurement position that is an end of the high-frequency power distribution body connected to an output terminal of a matching circuit when supplying the high-frequency power Among the high-frequency characteristics A of the processing chamber, the variation between the maximum value A _max and the minimum value A _min is as follows:
_{(A max -A min) / (} A max + A min)
Wherein the high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
A plasma processing apparatus wherein this value is set to a value smaller than 0.1 . 2. The plasma processing apparatus according to claim 1, wherein the high-frequency characteristics A of each of the plasma processing chambers are measured in a state where the matching circuit is separated from the measurement position. A plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, a high-frequency power distributor having an input terminal and an output terminal and connected to the electrode; And a matching circuit for obtaining impedance matching between the plasma processing chamber and the high-frequency power supply by connecting the high-frequency power supply to the input terminal via the high-frequency power feeder. A plasma processing apparatus comprising:
In each of the plasma processing chamber units, at the time of non-plasma emission, when supplying the high-frequency power , the plurality of the high-frequency power supply connected to the high-frequency power supply are measured at a measurement position that is the high-frequency power supply side end. Among the high-frequency characteristics A of each of the plasma processing chambers, the variation between the maximum value A _max and the minimum value A _min is
_{(A max -A min) / (} A max + A min)
Wherein the high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
A plasma processing apparatus wherein this value is set to a value smaller than 0.1 . The plasma processing apparatus according to claim 3, wherein the high-frequency characteristics A of each of the plasma processing chambers are measured in a state where the high-frequency power source is disconnected from the measurement position. A plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, a high-frequency power distributor having an input terminal and an output terminal and connected to the electrode; And a matching circuit for obtaining impedance matching between the plasma processing chamber and the high-frequency power supply by connecting the high-frequency power supply to the input terminal via the high-frequency power feeder. A plasma processing apparatus comprising:
In each of the plasma processing chamber units, during non-plasma emission , each of the plurality of plasma processing chambers measured at a measurement position that is the input terminal connected to the high-frequency power feeder when supplying the high-frequency power. Among the high-frequency characteristics A, the variation between the maximum value A _max and the minimum value A _min is as follows:
_{(A max -A min) / (} A max + A min)
Wherein the high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
A plasma processing apparatus wherein this value is set to a value smaller than 0.1 . The plasma processing apparatus according to claim 5, wherein the high-frequency characteristics A of each of the plasma processing chambers are measured in a state where the high-frequency power feeder is separated from the measurement position. The plasma processing apparatus according to any one of 6 claim 1, characterized in that the value of the variation is set to a value of less than 0.03. The frequency characteristic A plasma processing apparatus according to any one of claims 1 to 7, characterized in that first a series resonance frequency f _0. Any said 3 times the first series resonance frequency f ₀ corresponding to each of the plasma processing chamber of claim 1 to 8, characterized by being set to a value greater range than the frequency f _e of the high-frequency power Or a plasma processing apparatus according to any one of the preceding claims. The plasma processing apparatus according to any one of claims 1 to 9 , wherein measurement terminals for measuring high-frequency characteristics A of the plasma processing chamber are provided at the measurement positions corresponding to the respective plasma processing chambers. . In the vicinity of the measurement position,
When exciting the plasma, the electrical connection between the measurement position and the measurement terminal is cut off, and the electrical connection between the power distribution body side and the high-frequency power supply side is secured, and the frequency characteristics of the plasma processing chamber are reduced. When measuring A, a changeover switch is provided that secures electrical connection between the measurement position and the measurement terminal and disconnects electrical connection between the high-frequency power supply side and the measurement position. The plasma processing apparatus according to claim 10 . An output of the matching circuit in a case where the switch disconnects an electrical connection between the high-frequency power distribution body end and the measurement terminal and secures an electrical connection between the power distribution body end and the output terminal of the matching circuit. A high-frequency characteristic A measured at the end position;
The switch ensures the electrical connection between the end of the power distribution unit and the terminal for measurement and the terminal for measurement when the electric connection between the power distribution unit end and the output terminal of the matching circuit is disconnected. 12. The plasma processing apparatus according to claim 11, wherein the measured high-frequency characteristic A is set to be equal. The plasma processing system plasma processing apparatus characterized by a plurality provided Turkey according to any one of claims 1 to 12. In the vicinity of the measurement position,
When exciting the plasma, the electrical connection between the measurement position and the measurement terminal is cut off, and the electrical connection between the power distribution body side and the high-frequency power supply side is secured, and the frequency characteristics of the plasma processing chamber are reduced. When measuring A, a changeover switch is provided that secures electrical connection between the measurement position and the measurement terminal and disconnects electrical connection between the high-frequency power supply side and the measurement position. The plasma processing system according to claim 12 . The plasma processing system according to claim 14 , wherein a high-frequency characteristic measuring device is switchably connected to the measurement terminal of each plasma processing chamber. 16. The plasma processing system according to claim 15 , wherein in each of the plasma processing chambers, a high-frequency characteristic A between the measurement position and a high-frequency characteristic measuring device connected to the measurement terminal is set to be equal. An output of the matching circuit in a case where the switch disconnects an electrical connection between the high-frequency power distribution body end and the measurement terminal and secures an electrical connection between the power distribution body end and the output terminal of the matching circuit. A high-frequency characteristic A measured at the end position;
The switch ensures the electrical connection between the end of the power distribution unit and the terminal for measurement and the terminal for measurement when the electric connection between the power distribution unit end and the output terminal of the matching circuit is disconnected. 17. The plasma processing system according to claim 16, wherein the measured high-frequency characteristic A is set to be equal. A plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, an input terminal and an output terminal, wherein the high-frequency power supply is connected to the input terminal, and the electrode A plasma processing chamber unit including a plurality of plasma processing chamber units each including: a matching circuit that obtains impedance matching between the plasma processing chamber and the high-frequency power supply by connecting a high-frequency power distributor connected to the output terminal to the output terminal. The method,
In each of the plasma processing chamber units, at the time of non-plasma emission, the plurality of plasmas measured at a measurement position that is an end of the high-frequency power distribution body connected to an output terminal of a matching circuit when supplying the high-frequency power Among the high-frequency characteristics A of the processing chamber, the variation between the maximum value A _max and the minimum value A _min is as follows:
_{(A max -A min) / (} A max + A min)
Wherein the high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
A method for inspecting a plasma processing apparatus, comprising: checking whether this value is smaller than 0.1 . 19. The inspection method for a plasma processing apparatus according to claim 18, wherein the high-frequency characteristics A of each of the plasma processing chambers are measured in a state where the matching circuit is separated from the measurement position. A plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, a high-frequency power distributor having an input terminal and an output terminal and connected to the electrode; And a matching circuit for obtaining impedance matching between the plasma processing chamber and the high-frequency power supply by connecting the high-frequency power supply to the input terminal via the high-frequency power feeder. An inspection method for a plasma processing apparatus, comprising:
In each of the plasma processing chamber units, at the time of non-plasma emission, when supplying the high-frequency power , the plurality of the high-frequency power supply connected to the high-frequency power supply are measured at a measurement position that is the high-frequency power supply side end. Among the high-frequency characteristics A of each of the plasma processing chambers, the variation between the maximum value A _max and the minimum value A _min is
_{(A max -A min) / (} A max + A min)
Wherein the high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
A method for inspecting a plasma processing apparatus, comprising: confirming whether this value is smaller than 0.1 . 21. The inspection method for a plasma processing apparatus according to claim 20, wherein the high-frequency characteristics A of each of the plasma processing chambers are measured in a state where the high-frequency power source is disconnected from the measurement position. A plasma processing chamber having an electrode for exciting plasma, a high-frequency power supply for supplying high-frequency power to the electrode, a high-frequency power distributor having an input terminal and an output terminal and connected to the electrode; And a matching circuit for obtaining impedance matching between the plasma processing chamber and the high-frequency power supply by connecting the high-frequency power supply to the input terminal via the high-frequency power feeder. An inspection method for a plasma processing apparatus, comprising:
In each of the plasma processing chamber units, at the time of non-plasma emission , each of the plurality of plasma processing chambers measured at a measurement position that is the input terminal connected to the high-frequency power supply when supplying the high-frequency power Among the high-frequency characteristics A of the above, the variation between the maximum value A _max and the minimum value A _min is
_{(A max -A min) / (} A max + A min)
Wherein the high frequency characteristic A is any one of a resonance frequency f, an impedance Z at a frequency of the high frequency power, a resistance R at a frequency of the high frequency power, or a reactance X at a frequency of the high frequency power,
A method for inspecting a plasma processing apparatus, comprising: confirming whether this value is smaller than 0.1 . 23. The inspection method for a plasma processing apparatus according to claim 22, wherein the high-frequency characteristics A of each of the plasma processing chambers are measured in a state where the high-frequency power feeder is separated from the measurement position. 24. The inspection method for a plasma processing apparatus according to claim 18, wherein the value of the variation is confirmed to be in a range smaller than 0.03. The frequency characteristic A is the inspection method for a plasma processing apparatus according to any of claims 18 24, characterized in that first a series resonance frequency f _0. Any said 3 times the first series resonance frequency f ₀ corresponding to each of the plasma processing chamber, claim 18, characterized in that the check whether a value of greater range than the frequency f _e of the high frequency power 25 Inspection method for a plasma processing apparatus according to the above. The plasma processing method of inspecting system comprising a kite plasma processing apparatus provided with a plurality of any one of claims 18 26.

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