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JP3348781B2 - High frequency semiconductor package - Google Patents

High frequency semiconductor package

Info

Publication number
JP3348781B2
JP3348781B2 JP18657299A JP18657299A JP3348781B2 JP 3348781 B2 JP3348781 B2 JP 3348781B2 JP 18657299 A JP18657299 A JP 18657299A JP 18657299 A JP18657299 A JP 18657299A JP 3348781 B2 JP3348781 B2 JP 3348781B2
Authority
JP
Japan
Prior art keywords
heat sink
semiconductor package
screw
frequency semiconductor
threaded hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP18657299A
Other languages
Japanese (ja)
Other versions
JP2001015660A (en
Inventor
宏治 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18657299A priority Critical patent/JP3348781B2/en
Publication of JP2001015660A publication Critical patent/JP2001015660A/en
Application granted granted Critical
Publication of JP3348781B2 publication Critical patent/JP3348781B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は高周波半導体パッケ
ージに関し、特に放熱板構造を持つ高周波半導体パッケ
ージに関する。
The present invention relates to a high-frequency semiconductor package, and more particularly, to a high-frequency semiconductor package having a heat sink structure.

【0002】[0002]

【従来の技術】半導体の動作時に半導体から発生する熱
を効率良く逃がして半導体の温度上昇を抑制するため
に、実働時には放熱効果に優れたヒートシンクに熱的接
触を取る技術が一般的に行われている。
2. Description of the Related Art In order to efficiently release heat generated from a semiconductor during operation of the semiconductor and to suppress a rise in the temperature of the semiconductor, a technique of making thermal contact with a heat sink having an excellent heat radiation effect during operation is generally used. ing.

【0003】従来の技術について図3を用いて説明す
る。図3(a)は放熱板構造を持つ高周波半導体パッケ
ージの外観を示している。図3(a)に示すパッケージ
は片側1個または複数個のフランジ部ネジ止め穴2を通
したネジ7によりヒートシンク6と熱的接触が取られる
(図3(b))。
A conventional technique will be described with reference to FIG. FIG. 3A shows the appearance of a high-frequency semiconductor package having a heat sink structure. The package shown in FIG. 3A is in thermal contact with the heat sink 6 by screws 7 passing through one or more flange screw holes 2 on one side (FIG. 3B).

【0004】また、特開平04−116957号公報に
示されるようなパッケージ上面から貫通するネジ穴を有
し、パッケージ全体をヒートシンクに固定する技術が一
般に知られている。
[0004] Further, there is generally known a technique as disclosed in JP-A-04-116957, which has a screw hole penetrating from the upper surface of a package and fixes the entire package to a heat sink.

【0005】[0005]

【発明が解決しようとする課題】しかし、図3(c)に
示すように、パッケージ放熱板1の湾曲や、フランジ部
ネジ止め穴2を通したネジ締め応力によるパッケージ放
熱板1の変形により、放熱板1とヒートシンク6との間
に隙間8が発生する恐れがある。隙間8が生じることに
より放熱板1とヒートシンク6の熱的接触性は低下し、
半導体の熱放散性が十分でなくなる問題点が指摘されて
いた。
However, as shown in FIG. 3 (c), due to the curvature of the package radiator plate 1 and the deformation of the package radiator plate 1 due to the screw tightening stress passing through the flange portion screw holes 2, A gap 8 may be generated between the heat sink 1 and the heat sink 6. Due to the formation of the gap 8, the thermal contact between the heat sink 1 and the heat sink 6 is reduced,
It has been pointed out that the heat dissipation of the semiconductor becomes insufficient.

【0006】さらに、しかし、特開平04−11695
7号公報に示されるような放熱板6の上にハーメチック
シール構造の回路搭載部分4を配置することは、ハーメ
チックシール構造の全面に回路搭載部分が配置されるた
めに、貫通するネジ穴を設置することが困難であった。
これらの理由によりネジ止め穴2はフランジ部端にのみ
配置されていた。従つて、パッケージ形状が大きい場
合、もしくは横方向に長い場合はネジ止め穴2同士の物
理的距離が大きくなるために、パッケージ放熱板1の湾
曲や、フランジ部ネジ止め穴2を通したネジ締め応力に
よるパッケージ放熱板1の変形が大きくなり、放熱板1
とヒートシンク6との間に隙間8が発生しやすくなる問
題点が指摘されていた。
Further, however, Japanese Patent Application Laid-Open No. H04-11695
Arranging the circuit mounting portion 4 having the hermetic seal structure on the heat radiating plate 6 as disclosed in Japanese Patent Publication No. 7-No. 7 requires installing a threaded hole to penetrate the circuit mounting portion over the entire surface of the hermetic seal structure. It was difficult to do.
For these reasons, the screw holes 2 are arranged only at the ends of the flanges. Accordingly, when the package shape is large or long in the lateral direction, the physical distance between the screw holes 2 becomes large, so that the package heat radiation plate 1 is curved or the screw is tightened through the flange screw holes 2. The deformation of the package heatsink 1 due to the stress increases, and the heatsink 1
It has been pointed out that a gap 8 is easily generated between the heat sink 6 and the heat sink 6.

【0007】本発明の目的はヒートシンクが放熱板のフ
ランジ部でネジ締めされている放熱板構造を持つ高周波
半導体パッケージにおける熱放散性の均一な高周波半導
体パッケージを提供することである。
It is an object of the present invention to provide a high-frequency semiconductor package having a uniform heat dissipation property in a high-frequency semiconductor package having a heat sink structure in which a heat sink is screwed at a flange of a heat sink.

【0008】[0008]

【課題を解決するための手段】本発明の高周波半導体パ
ッケージは、放熱板のフランジ部に設けられたネジ止め
穴を貫通するネジでヒートシンクにネジ締めされる放熱
板構造を持つ高周波半導体パッケージにおいて、放熱板
とヒートシンクとの接触面に放熱板を貫通しないネジ切
り穴を配置し、ネジ切り穴によりヒートシンク側から放
熱板へのネジ締め手段を有することを特徴とする。
According to the present invention, there is provided a high-frequency semiconductor package comprising a screw provided on a flange of a heat sink.
In a high-frequency semiconductor package with a heatsink structure that is screwed to the heatsink with a screw that penetrates the hole, a threaded hole that does not penetrate the heatsink is arranged on the contact surface between the heatsink and the heatsink, and the screwhole is used to remove the heatsink from the heatsink side. It is characterized by having means for screwing to the heat sink.

【0009】また、ネジ切り穴は、ヒートシンク側から
接触面方向の放熱板を貫通しない穴の内面にネジ切りし
たネジ切り穴であり、ヒートシンクが放熱板のフランジ
部でネジ締めされているネジ個数とネジ配置に応じて複
数個のネジ切り穴である。
The threaded hole is a threaded hole formed by threading the inner surface of a hole that does not penetrate the heat sink in the direction of the contact surface from the heat sink side, and the number of screws with which the heat sink is screwed at the flange portion of the heat sink. And a plurality of threaded holes according to the screw arrangement.

【0010】また、ネジ切り穴は、細目ネジ山の場合、
少なくとも4個以上のネジ山を有し、並目ネジ山の場
合、少なくとも3.5個以上のネジ山を有する。
In the case of a fine screw thread,
It has at least 4 or more threads, and in the case of coarse threads, has at least 3.5 or more threads.

【0011】更に、ネジ切り穴は、ヒートシンクが放熱
板のフランジ部でネジ締めされているネジ径の少なくと
も1.5倍のネジ径を有する。
Further, the threaded hole has a thread diameter at least 1.5 times the thread diameter at which the heat sink is screwed at the flange of the heat sink.

【0012】本発明の、放熱板裏面に貫通しないネジ切
り穴を用いることによりパッケージとヒートシンク間の
熱放散性は均一となり、熱的接触性が向上する。
By using a threaded hole which does not penetrate the back surface of the heat sink of the present invention, the heat dissipation between the package and the heat sink becomes uniform and the thermal contact is improved.

【0013】[0013]

【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して詳細に説明する。図1は本発明の一実
施例の各構成要素を示す図、図2は本発明の他の実施例
の各構成要素を示す図である。
Next, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a diagram showing components of one embodiment of the present invention, and FIG. 2 is a diagram showing components of another embodiment of the present invention.

【0014】図1(a)は本発明の形態を示す高周波半
導体パッケージの全体図である。放熱板1に、フランジ
部ネジ止め穴2と、裏面ネジ切り穴3を有している。ま
た、放熱板1の上面にはハーメチックシール構造の回路
搭載部分4と、回路搭載部分と内部回路のインターフェ
イス用としてリード5がある。図1(b)は本発明の実
施例における高周波半導体パッケージがヒートシンクに
装着された状態を示す断面図である。高周波半導体パッ
ケージは、ネジ7によりヒートシンク6に装着されてい
る。図1(c)は、図1(b)の高周波半導体パッケー
ジがヒートシンク6に装着されている部分の拡大図であ
る。
FIG. 1A is an overall view of a high-frequency semiconductor package showing an embodiment of the present invention. The heat radiating plate 1 has a flange screw hole 2 and a rear screw hole 3. A circuit mounting portion 4 having a hermetic seal structure and leads 5 for interfacing the circuit mounting portion and the internal circuit are provided on the upper surface of the heat sink 1. FIG. 1B is a cross-sectional view showing a state in which the high-frequency semiconductor package according to the embodiment of the present invention is mounted on a heat sink. The high-frequency semiconductor package is mounted on the heat sink 6 by screws 7. FIG. 1C is an enlarged view of a portion where the high-frequency semiconductor package of FIG.

【0015】本発明の実施例について動作を以下に説明
する。図1(b)に示すように高周波半導体パッケージ
は、ヒートシンク6に装着して使用される。この時、高
周波半導体パッケージは、片側1個または複数個のフラ
ンジ部ネジ止め穴2を通したネジ7と、ヒートシンク側
から裏面ネジ切り穴3に通したネジ7によりヒートシン
ク6と熱的接触が取られる。
The operation of the embodiment of the present invention will be described below. As shown in FIG. 1B, the high-frequency semiconductor package is mounted on a heat sink 6 and used. At this time, the high frequency semiconductor package is in thermal contact with the heat sink 6 by the screw 7 passing through one or more flange screw holes 2 on one side and the screw 7 passing through the rear screw hole 3 from the heat sink side. Can be

【0016】本発明の他の実施例について図2を用いて
説明する。ヒートシンク6が放熱板のフランジ部でネジ
締めされているネジ個数とネジ配置によって、放熱板1
へのネジ切り穴3の個数が決められる。ヒートシンク6
側から放熱板1へネジ締めを行うためのネジ切り穴3を
複数個設けることで様々な形状・大きさの放熱板を有す
る高周波半導体パッケージの放熱板とヒートシンク6の
放熱性を向上することが可能となる。図2(a)は高周
波半導体パッケージの放熱板中央部に2個配置した場合
である。また、図2(b)は等間隔に3個配置した例で
ある。いずれの実施例においてもフランジ部とヒートシ
ンク6の熱的接触性を改善することが可能になり、半導
体の熱放散性を向上することが可能になる。
Another embodiment of the present invention will be described with reference to FIG. Depending on the number of screws and the arrangement of the screws on which the heat sink 6 is screwed at the flange portion of the heat sink, the heat sink 1
The number of threaded holes 3 is determined. Heat sink 6
By providing a plurality of threaded holes 3 for fastening screws to the heat sink 1 from the side, the heat dissipation of the heat sink 6 and the heat sink 6 of a high-frequency semiconductor package having heat sinks of various shapes and sizes can be improved. It becomes possible. FIG. 2A shows a case in which two of the high-frequency semiconductor packages are arranged at the center of the heat sink. FIG. 2B shows an example in which three pieces are arranged at equal intervals. In any of the embodiments, the thermal contact between the flange portion and the heat sink 6 can be improved, and the heat dissipation of the semiconductor can be improved.

【0017】また、ネジ切り穴3は、細目ネジ山の場
合、少なくとも4個以上のネジ山があり、また、並目ネ
ジ山の場合、少なくとも3.5個以上のネジ山が有るよ
うにし、ネジ締めが確実に行われる。
The threaded hole 3 has at least four or more threads in the case of fine threads, and has at least 3.5 or more threads in the case of coarse threads. Screws are securely tightened.

【0018】更に、ネジ切り穴3は、ヒートシンク6が
放熱板1のフランジ部でネジ締めされているネジ径の少
なくとも1.5倍のネジ径を有することがネジ締めを確
実に行う上で望ましい。
Further, it is desirable that the threaded hole 3 has a screw diameter of at least 1.5 times the screw diameter of the heat sink 6 screwed at the flange portion of the heat sink 1 in order to surely screw the screw. .

【0019】本発明の、放熱板1の裏面に貫通しないネ
ジ切り穴3を用いることにより高周波半導体パッケージ
とヒートシンク間の熱放散性は均一となり、熱的接触性
が向上する。
By using the threaded hole 3 which does not penetrate the back surface of the heat sink 1 of the present invention, the heat dissipation between the high-frequency semiconductor package and the heat sink becomes uniform, and the thermal contact is improved.

【0020】[0020]

【発明の効果】本発明の実施例について効果を以下に説
明する。図1(c)は、本発明の実施例についてヒート
シンク6に装着した状態の拡大図である。実施例の動作
の項で説明したように、高周波半導体パッケージはフラ
ンジ部ネジ止め穴2を通したネジ7と、ヒートシンク6
側から裏面ネジ切り穴3に通したネジ7によりパッケー
ジ放熱板1とヒートシンク6の熱的接触が得られる。こ
の時、ヒートシンク6側から裏面ネジ切り穴3に通した
ネジ7を用いることでネジをパッケージ放熱板1とヒー
トシンク6の隙間8は最小限に抑制できる。従って、半
導体から発生した熱はパッケージ放熱板1に伝導し、次
に最小の熱抵抗でヒートシンク6に伝導されるので、半
導体から発生した熱は非常に効率良く空気中まで放熱で
きるため、高周波半導体の温度上昇を抑制することが可
能になる。
The effects of the embodiment of the present invention will be described below. FIG. 1C is an enlarged view of the embodiment of the present invention in a state where the heat sink 6 is mounted. As described in the operation of the embodiment, the high-frequency semiconductor package includes the screw 7 passing through the screw hole 2 in the flange portion and the heat sink 6.
The thermal contact between the package radiator plate 1 and the heat sink 6 is obtained by the screws 7 passing through the rear threaded holes 3 from the side. At this time, by using the screw 7 that passes through the backside threaded hole 3 from the heat sink 6 side, the screw can be minimized in the gap 8 between the package radiator plate 1 and the heat sink 6. Therefore, the heat generated from the semiconductor is conducted to the package radiator plate 1 and then to the heat sink 6 with the next lowest thermal resistance, so that the heat generated from the semiconductor can be radiated to the air very efficiently. Temperature rise can be suppressed.

【0021】本発明によれば、放熱板裏面に貫通しない
ネジ切り穴を用いることによりパッケージとヒートシン
ク間の熱的接触性を向上させ、均一な熱放散性が得られ
ると言う効果がある。
According to the present invention, the use of a threaded hole that does not penetrate the back surface of the heat sink improves the thermal contact between the package and the heat sink, and has the effect of obtaining uniform heat dissipation.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の高周波半導体パッケージの
外観を示し、図1(a)は片側2個のフランジ部ネジ止
め穴と1個の裏面ネジ切り穴を持つ高周波半導体パッケ
ージの外観図、図1(b)はネジによりヒートシンクと
熱的接触が取られた高周波半導体パッケージの断面図、
図1(c)は接触部分の拡大断面図である。
FIG. 1 shows the appearance of a high-frequency semiconductor package according to one embodiment of the present invention, and FIG. 1A is an external view of a high-frequency semiconductor package having two flange-side screw holes and one back-side screw hole on one side. FIG. 1B is a cross-sectional view of a high-frequency semiconductor package in which a screw is in thermal contact with a heat sink,
FIG. 1C is an enlarged sectional view of a contact portion.

【図2】本発明の他の実施例の高周波半導体パッケージ
の外観を示し、図2(a)は片側2個のフランジ部ネジ
止め穴と2個の裏面ネジ切り穴を持つ高周波半導体パッ
ケージの外観図、図2(b)は片側1個のフランジ部ネ
ジ止め穴と3個の裏面ネジ切り穴を持つ高周波半導体パ
ッケージの外観図である。
FIG. 2 shows the appearance of a high-frequency semiconductor package according to another embodiment of the present invention. FIG. 2 (a) shows the appearance of a high-frequency semiconductor package having two screw holes on one side and two screw holes on the back side. FIG. 2 (b) is an external view of a high-frequency semiconductor package having one flange portion screw hole on one side and three rear screw holes.

【図3】従来の放熱板構造を持つ高周波半導体パッケー
ジの外観を示し、図3(a)は片側2個のフランジ部ネ
ジ止め穴を持つ高周波半導体パッケージの外観図、図3
(b)はネジによりヒートシンクと熱的接触が取られた
高周波半導体パッケージの断面図、図3(c)は接触部
分の拡大断面図である。
3A and 3B show the appearance of a conventional high-frequency semiconductor package having a heat sink structure, and FIG. 3A is an external view of a high-frequency semiconductor package having two flange screw holes on one side;
FIG. 3B is a cross-sectional view of the high-frequency semiconductor package in thermal contact with the heat sink by a screw, and FIG. 3C is an enlarged cross-sectional view of a contact portion.

【符号の説明】[Explanation of symbols]

1 放熱板 2 フランジ部ネジ止め穴 3 裏面ネジ切り穴 4 回路搭載部分 5 リード 6 ヒートシンク 7 ネジ 8 間隙 DESCRIPTION OF SYMBOLS 1 Heat sink 2 Screw hole for flange part 3 Screw hole on back 4 Circuit mounting part 5 Lead 6 Heat sink 7 Screw 8 Gap

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 放熱板のフランジ部に設けられたネジ止
め穴を貫通するネジでヒートシンクにネジ締めされる
熱板構造を持つ高周波半導体パッケージにおいて、 前記放熱板と前記ヒートシンクとの接触面に放熱板を貫
通しないネジ切り穴を配置し、前記ネジ切り穴により
ートシンク側から放熱板へのネジ締め手段を有すること
を特徴とする高周波半導体パッケージ。
1. A screw provided on a flange of a heat sink.
A high-frequency semiconductor package having a heat-dissipating plate structure that is screwed to a heat sink with a screw that penetrates a female hole , wherein a threaded hole that does not penetrate the heat-dissipating plate is arranged on a contact surface between the heat-sink and the heat sink. A high-frequency semiconductor package comprising: means for fastening a screw from a heat sink side to a heat sink by means of the screw hole .
【請求項2】 前記ネジ切り穴が、 前記ヒートシンク側から前記接触面方向の前記放熱板を
貫通しない穴の内面にネジ切りしたネジ切り穴である請
求項1記載の高周波半導体パッケージ。
2. The high-frequency semiconductor package according to claim 1, wherein the threaded hole is a threaded hole from the heat sink side to an inner surface of a hole that does not penetrate the heat sink in the direction of the contact surface.
【請求項3】 前記ネジ切り穴が、 前記ヒートシンクが前記放熱板のフランジ部でネジ締め
されているネジ個数とネジ配置に応じて複数個のネジ切
り穴である請求項1または2記載の高周波半導体パッケ
ージ。
3. The high-frequency wave according to claim 1, wherein the screw holes are a plurality of screw holes in accordance with the number of screws and the screw arrangement, in which the heat sink is screwed at the flange portion of the heat sink. Semiconductor package.
【請求項4】 前記ネジ切り穴が、 細目ネジ山を有し、少なくとも4個以上のネジ山を有す
る請求項1乃至3の何れにか記載の高周波半導体パッケ
ージ。
4. The high-frequency semiconductor package according to claim 1, wherein said threaded hole has a fine thread, and has at least four or more threads.
【請求項5】 前記ネジ切り穴が、 並目ネジ山を有し、少なくとも3.5個以上のネジ山を
有する請求項1乃至3の何れにか記載の高周波半導体パ
ッケージ。
5. The high-frequency semiconductor package according to claim 1, wherein the threaded hole has a coarse thread, and has at least 3.5 or more threads.
【請求項6】 前記ネジ切り穴が、 前記ヒートシンクが前記放熱板のフランジ部でネジ締め
されているネジ径の少なくとも1.5倍のネジ径を有す
るネジ切り穴である請求項1乃至5の何れにか記載の高
周波半導体パッケージ。
6. The threaded hole according to claim 1, wherein the threaded hole has a thread diameter of at least 1.5 times a thread diameter of the heat sink screwed at a flange portion of the heat sink. The high-frequency semiconductor package according to any one of the above.
JP18657299A 1999-06-30 1999-06-30 High frequency semiconductor package Expired - Fee Related JP3348781B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18657299A JP3348781B2 (en) 1999-06-30 1999-06-30 High frequency semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18657299A JP3348781B2 (en) 1999-06-30 1999-06-30 High frequency semiconductor package

Publications (2)

Publication Number Publication Date
JP2001015660A JP2001015660A (en) 2001-01-19
JP3348781B2 true JP3348781B2 (en) 2002-11-20

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4594166B2 (en) * 2005-05-27 2010-12-08 京セラ株式会社 Electronic component storage package and electronic device
US7502398B2 (en) 2006-11-02 2009-03-10 Coherent, Inc. Thermally tuned diode-laser bar package
EP3352214A1 (en) 2017-01-23 2018-07-25 Siemens Aktiengesellschaft Semiconductor module with baseplate with hollow camber
CN111836461B (en) * 2020-07-21 2022-09-02 深圳市诚之益电路有限公司 Heat dissipation type circuit board and preparation method thereof

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