JP3126645B2 - Scanning exposure apparatus, device manufacturing method and device - Google Patents
Scanning exposure apparatus, device manufacturing method and deviceInfo
- Publication number
- JP3126645B2 JP3126645B2 JP07308519A JP30851995A JP3126645B2 JP 3126645 B2 JP3126645 B2 JP 3126645B2 JP 07308519 A JP07308519 A JP 07308519A JP 30851995 A JP30851995 A JP 30851995A JP 3126645 B2 JP3126645 B2 JP 3126645B2
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- substrate
- projection optical
- measuring means
- measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体素子、液晶
パネル等の製造に使用される走査型露光装置およびそれ
を用いたデバイス製造方法ならびにその製造方法により
製造されるデバイスに関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a scanning exposure apparatus used for manufacturing semiconductor elements, liquid crystal panels, etc., a device manufacturing method using the same, and a device manufactured by the manufacturing method.
【0002】[0002]
【従来の技術および発明が解決しようとする課題】従
来、半導体素子、液晶パネル等を露光する方式として
は、投影光学系を介し、マスクと基板(またはウエハ)
をキャリッジ上に載せて一体的に移動させながら走査露
光することによりマスク全面の像を基板上に転写する方
式がある。しかし、最近の動向としては、基板を大型化
し、1枚の基板から取得できる液晶パネルの枚数を増や
すことにより液晶パネルのコストを下げる方向に向かっ
ている。その際生じる問題として基板が大型になること
により、マスクと基板を一体で保持しているキャリッジ
の重量が増加するという問題がある。その結果、キャリ
ッジを高速で制御することが困難になり、スループット
が大幅に低下してしまう。その対策として、マスクと基
板のそれぞれに個別の走査ステージ、駆動系およびレー
ザ干渉計を設け、同期駆動によりマスクの像を基板上に
転写する方式がある(特公平5−15054号公報)。
この方式の場合、従来のマスクと基板を連結するキャリ
ッジが必要なくなり走査重量は大幅に減少する。それに
より、マスクと基板の同期を高速で制御することが可能
になり、スループットは大幅に向上する。しかし新たに
発生する問題もある。すなわち、走査中のマスクの位置
を計測するレーザ干渉計の干渉部分を取り付けている本
体構造体の箇所Aと走査中の基板の位置を計測するレー
ザ干渉計の干渉部分を取り付けている本体構造体の箇所
Bが、移動体の移動に伴う重量移動や移動体の加速時の
反力により本体構造体の箇所AおよびB間に相対位置変
化が生じる。その結果、マスクと基板との間に同期位置
誤差が発生し、オーバーレイ精度が劣化する。2. Description of the Related Art Conventionally, as a method of exposing a semiconductor element, a liquid crystal panel, or the like, a mask and a substrate (or wafer) are exposed through a projection optical system.
There is a method in which an image on the entire surface of a mask is transferred onto a substrate by carrying out scanning exposure while moving integrally on a carriage. However, a recent trend has been to reduce the cost of the liquid crystal panel by increasing the size of the substrate and increasing the number of liquid crystal panels that can be obtained from one substrate. As a problem that occurs at that time, there is a problem that the weight of the carriage that integrally holds the mask and the substrate increases due to the increase in the size of the substrate. As a result, it is difficult to control the carriage at high speed, and the throughput is greatly reduced. As a countermeasure, there is a method in which an individual scanning stage, a driving system, and a laser interferometer are provided for each of the mask and the substrate, and the image of the mask is transferred onto the substrate by synchronous driving (Japanese Patent Publication No. 5-15054).
In the case of this method, the carriage for connecting the conventional mask and the substrate is not required, and the scanning weight is greatly reduced. As a result, the synchronization between the mask and the substrate can be controlled at high speed, and the throughput is greatly improved. However, there are also new problems. That is, the position A of the main body structure where the interference part of the laser interferometer for measuring the position of the mask being scanned is mounted and the main body structure where the interference part of the laser interferometer for measuring the position of the substrate being scanned is mounted In the position B, a relative position change occurs between the positions A and B of the main body structure due to a weight movement accompanying the movement of the moving body or a reaction force at the time of acceleration of the moving body. As a result, a synchronization position error occurs between the mask and the substrate, and the overlay accuracy deteriorates.
【0003】これを、図2を用いて具体的に説明する。
図2は従来例に係る露光装置の構成を示す。図中、1は
焼付パターンが形成されているマスク、2はマスク1を
搭載してX、Yおよびθ方向に移動可能なマスクステー
ジ、3は液晶表示板を製造するためにその表面に多数の
画素とこれらの画素のオンまたはオフを制御するための
スイッチングトランジスタが通常のフォトリソグラフィ
の手段で形成されるガラス基板、4は基板3を保持して
X、Yおよびθ方向に移動可能な基板ステージである。This will be specifically described with reference to FIG.
FIG. 2 shows a configuration of an exposure apparatus according to a conventional example. In the drawing, 1 is a mask on which a printing pattern is formed, 2 is a mask stage on which the mask 1 is mounted and can be moved in the X, Y and θ directions, and 3 is a large number of masks on the surface thereof for manufacturing a liquid crystal display panel. A glass substrate on which pixels and switching transistors for controlling on / off of these pixels are formed by ordinary photolithography means; 4 a substrate stage which can hold the substrate 3 and move in the X, Y and θ directions It is.
【0004】5は特定の波長の光で露光位置にあるマス
ク1を照明する照明光学系であり、マスク1上のパター
ンを介して基板3上の感光層を露光することにより、マ
スク1上のパターンを基板3に転写可能とするためのも
のである。6は凹面鏡であり、凸面鏡7および折曲げ鏡
8との組合わせにより周知のミラー投影系を構成し、マ
スクステージ2によって所定位置にアライメントされた
マスク1のパターン像を基板3上に等倍投影するもので
ある。An illumination optical system 5 illuminates the mask 1 located at the exposure position with light of a specific wavelength. The illumination optical system 5 exposes a photosensitive layer on the substrate 3 through a pattern on the mask 1 so as to expose the mask 1 on the mask 1. This is for enabling the pattern to be transferred to the substrate 3. Reference numeral 6 denotes a concave mirror, which constitutes a well-known mirror projection system in combination with the convex mirror 7 and the bending mirror 8, and projects a pattern image of the mask 1 aligned at a predetermined position on the substrate 3 by the mask stage 2 at the same magnification. Is what you do.
【0005】9は基板ステージ4を載置しているベース
定盤であり、10はマスクステージ2が載置されている
マスクステージ定盤である。マスクステージ定盤10は
連結板11によりベース定盤9と連結されている。12
および14はそれぞれマスクステージ2および基板ステ
ージ4をX方向に移動させるためのモータである。13
および15はそれぞれ各ステージ2および4すなわちマ
スク1および基板3の位置をモニタするための測長器で
あり、例えばレーザ干渉計である。Reference numeral 9 denotes a base platen on which the substrate stage 4 is mounted, and reference numeral 10 denotes a mask stage platen on which the mask stage 2 is mounted. The mask stage base 10 is connected to the base base 9 by a connection plate 11. 12
And 14 are motors for moving the mask stage 2 and the substrate stage 4 in the X direction, respectively. 13
And 15 are length measuring devices for monitoring the positions of the stages 2 and 4, ie, the mask 1 and the substrate 3, respectively, and are, for example, laser interferometers.
【0006】16は、走査露光時、レーザ干渉計13お
よび15のステージ位置情報を基にモータ12および1
4の駆動量を制御することにより、ステージ2および4
を互いに同期させて移動する制御回路である。制御回路
16は、例えばモータ12を一定電圧で駆動してマスク
ステージ2を定速走行させ、レーザ干渉計13および1
5で計測されるステージ2および4の位置に応じた駆動
量をモータ14に供給して基板ステージ4を移動する。
この場合、各ステージの移動速度は、必ずしも同一であ
る必要はなく、適当な速度比を持たせても良い。Reference numeral 16 denotes motors 12 and 1 based on stage position information of the laser interferometers 13 and 15 during scanning exposure.
By controlling the driving amount of stage 4, stages 2 and 4
Are synchronized with each other. The control circuit 16 drives, for example, the motor 12 at a constant voltage to make the mask stage 2 run at a constant speed, and the laser interferometers 13 and 1
The drive amount corresponding to the positions of the stages 2 and 4 measured at 5 is supplied to the motor 14 to move the substrate stage 4.
In this case, the moving speed of each stage does not necessarily have to be the same, and an appropriate speed ratio may be provided.
【0007】この制御方式の場合に発生する問題とし
て、マスクステージ2および基板ステージ4の移動中の
位置をモニタする測長器13および15を取り付けてい
る部材間で、移動体の移動に伴う重量移動、または移動
体の加速時の反力により相対位置変化が生じる。その場
合、上記制御方式では相対位置変化は補正できず、その
相対位置変化量だけマスク1と基板3の間に同期位置誤
差が発生し、マスクのパターンが基板の所定の位置に転
写できない。その結果、画素を制御するためのスイッチ
ングトランジスタの特性不良が発生する。A problem that occurs in the case of this control method is that the weight accompanying the movement of the moving body between the members to which the length measuring devices 13 and 15 for monitoring the moving positions of the mask stage 2 and the substrate stage 4 are attached. The relative position changes due to the reaction force at the time of movement or acceleration of the moving body. In this case, the relative position change cannot be corrected by the above-described control method, and a synchronous position error occurs between the mask 1 and the substrate 3 by the relative position change amount, so that the mask pattern cannot be transferred to a predetermined position on the substrate. As a result, a characteristic failure of the switching transistor for controlling the pixel occurs.
【0008】本発明の目的は、このような従来技術の問
題点に鑑み、高精度な露光転写を可能にし、半導体素子
の高集積化および液晶表示板の高精細化に対応できる走
査型露光装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a scanning exposure apparatus capable of performing high-accuracy exposure transfer and capable of coping with high integration of semiconductor elements and high definition of a liquid crystal display panel in view of the problems of the prior art. Is to provide.
【0009】[0009]
【課題を解決するための手段および作用】この目的を達
成するため、本発明の走査型露光装置は、原版を移動さ
せる第1の移動手段、原版の位置を計測する第1の計測
手段、基板を移動させる第2の移動手段、基板の位置を
計測する第2の計測手段、原版上のパターンを照明する
照明光学系、および第1計測手段と第2計測手段の計測
値に基づいて第1移動手段と第2移動手段の駆動を制御
する制御手段を有し、原版と基板を位置的に整合した状
態で照明光学系に対して相対的に移動しながらスキャン
露光することにより原版上のパターンを基板上に転写す
る走査型露光装置において、第1計測手段と第2計測手
段間の相対位置を計測する第3の計測手段を有し、制御
手段は、相対位置をも考慮して第1移動手段または第2
移動手段を駆動することにより相対位置の変化により生
じる整合状態の誤差を補正するものであることを特徴と
する。To achieve this object, a scanning exposure apparatus according to the present invention comprises a first moving means for moving an original, a first measuring means for measuring the position of the original, and a substrate. , A second measuring means for measuring the position of the substrate, an illumination optical system for illuminating the pattern on the original, and a first measuring means based on the measured values of the first measuring means and the second measuring means. A control unit for controlling the driving of the moving unit and the second moving unit; and a pattern on the original by scanning and exposing while moving the original and the substrate relative to the illumination optical system in a state of being aligned. Scanning exposure apparatus for transferring the first position on a substrate, the third position measuring unit for measuring a relative position between the first measuring unit and the second measuring unit, and the control unit sets the first position in consideration of the relative position. Means of transport or second
The method is characterized in that an error in the alignment state caused by a change in the relative position is corrected by driving the moving means.
【0010】また、第3計測手段は、第1または第2計
測手段の近傍に固定されたレーザ干渉計であり、その近
傍に位置しない第2または第1計測手段の位置を計測す
るものであることを特徴とする。The third measuring means is a laser interferometer fixed near the first or second measuring means, and measures the position of the second or first measuring means which is not located near the first or second measuring means. It is characterized by the following.
【0011】また、スキャン露光を基板をステップ送り
するごとに繰り返すステップアンドスキャン方式のもの
であることを特徴とする。Further, the present invention is characterized in that it is of a step-and-scan type in which scanning exposure is repeated every time the substrate is stepped.
【0012】また、投影光学系を有し、スキャン露光
は、この投影光学系を介して行うことを特徴とする。In addition, the apparatus has a projection optical system, and scan exposure is performed through the projection optical system.
【0013】また、投影光学系は、ミラー投影光学系で
あることを特徴とする。Further, the projection optical system is characterized in that it is a mirror projection optical system.
【0014】また、投影光学系は、レンズ投影光学系で
あることを特徴とする。The projection optical system is a lens projection optical system.
【0015】また、投影光学系は、縮小投影光学系であ
ることを特徴とする。Further, the projection optical system is a reduction projection optical system.
【0016】また、本発明のデバイス製造方法は、原版
の位置および基板の位置をそれぞれ第1および第2の計
測手段により計測しつつ、その計測結果に基づいて原版
および基板を位置的に整合した状態で照明光学系に対し
て相対的に移動させながらスキャン露光することにより
原版上のパターンを基板上に転写するデバイス製造方法
において、第3の計測手段により第1および第2計測手
段間の相対位置を計測しつつ、この計測結果にも基づい
て整合した状態での移動を行うことを特徴とする。Further, according to the device manufacturing method of the present invention, while the position of the original plate and the position of the substrate are respectively measured by the first and second measuring means, the original plate and the substrate are positionally matched based on the measurement results. In a device manufacturing method in which a pattern on an original is transferred onto a substrate by performing scanning exposure while relatively moving the illumination optical system in a state, a third measurement unit sets a relative position between the first and second measurement units. The method is characterized in that, while measuring the position, the movement is performed in an aligned state based on the measurement result.
【0017】また、第3計測手段は、第1または第2計
測手段の近傍に固定されたレーザ干渉計であり、その近
傍に位置しない第2または第1計測手段の位置を計測す
るものであることを特徴とする。The third measuring means is a laser interferometer fixed near the first or second measuring means, and measures the position of the second or first measuring means which is not located near the first or second measuring means. It is characterized by the following.
【0018】また、スキャン露光を基板をステップ送り
するごとに繰り返すステップアンドスキャン方式の露光
を行うことを特徴とする。Further, the present invention is characterized in that step-and-scan type exposure is performed in which scanning exposure is repeated every time the substrate is stepped.
【0019】また、投影光学系を有し、スキャン露光
は、この投影光学系を介して行うことを特徴とする。Further, it has a projection optical system, and the scanning exposure is performed through this projection optical system.
【0020】また、投影光学系は、ミラー投影光学系で
あることを特徴とする。Also, the projection optical system is characterized in that it is a mirror projection optical system.
【0021】また、投影光学系は、レンズ投影光学系で
あることを特徴とする。Further, the projection optical system is characterized in that it is a lens projection optical system.
【0022】また、投影光学系は、縮小投影光学系であ
ることを特徴とする。The projection optical system is a reduction projection optical system.
【0023】また、本発明のデバイスは、原版の位置お
よび基板の位置をそれぞれ第1および第2の計測手段に
より計測しつつ、その計測結果に基づいて原版および基
板を同期させて移動させながら、原版のパターンを基板
上にスキャン露光するデバイス製造方法であって、第3
の計測手段により第1および第2計測手段間の相対位置
を計測しつつ、この計測結果にも基づいて同期した移動
を行うデバイス製造方法により製造されることを特徴と
する。The device of the present invention measures the position of the original plate and the position of the substrate by the first and second measuring means, respectively, and moves the original plate and the substrate synchronously based on the measurement results. A device manufacturing method for scanning and exposing a pattern of an original onto a substrate, comprising:
And measuring the relative position between the first and second measuring means by the measuring means, and performing a synchronous movement based on the measurement result.
【0024】これにより、第1計測手段と第2計測手段
間の相対位置変化、すなわち、これら計測手段が設置さ
れた本体構造体の変形による同期誤差が補正される。Thus, the relative position change between the first measuring means and the second measuring means, that is, the synchronization error due to the deformation of the main body structure on which these measuring means are installed is corrected.
【0025】[0025]
【実施例】図1は、本発明の一実施例に係る露光装置の
構成を示す図である。この装置では、図2のものに対し
て次のような要素17〜20が追加されている。すなわ
ち17は測長器、例えばレーザ干渉計であり、基板ステ
ージ4の位置を計測するための計測器15の近傍に取り
付けられ、ベース定盤9上に取り付けられている架台1
9に固定されている。測長器17は架台19に固定され
ている折曲げミラー18を介して、マスクステージ2の
位置を計測する計測器13が固定されたマスクステージ
定盤10の位置の変化を測定するための測定器である。
制御回路20は、走査露光時、レーザ干渉計13および
15のステージ位置情報とレーザ干渉計17の本体構造
体の相対位置変化情報を基にモータ12および14への
駆動量を制御することにより、ステージ2および4を互
いに同期させて移動する。より具体的には、例えばモー
タ12を一定電圧で駆動してマスクステージ2を定速走
行させ、レーザ干渉計13および15で計測されるステ
ージ2および4の位置に応じた駆動量にレーザ干渉計1
7で計測された位置の変化量に見合った駆動量を加算し
た駆動量をモータ14に供給して基板ステージ4を移動
すればよい。なお、上述においては投影光学系としてミ
ラー投影光学系を用いているが、この代わりにレンズ投
影光学系を用いることも可能である。また、本体構造体
の変形量を測定する測長器は必ずしもレーザ干渉計に限
らず、静電容量センサ等の微小変位測定器でもよい。FIG. 1 is a view showing the arrangement of an exposure apparatus according to one embodiment of the present invention. In this device, the following elements 17 to 20 are added to those in FIG. That is, reference numeral 17 denotes a length measuring device, for example, a laser interferometer, which is mounted near the measuring device 15 for measuring the position of the substrate stage 4 and which is mounted on the base plate 9.
9 is fixed. The length measuring device 17 is a measurement for measuring a change in the position of the mask stage base 10 to which the measuring device 13 for measuring the position of the mask stage 2 is fixed via a bending mirror 18 fixed to a gantry 19. It is a vessel.
The control circuit 20 controls the amount of drive to the motors 12 and 14 based on the stage position information of the laser interferometers 13 and 15 and the relative position change information of the main body structure of the laser interferometer 17 during scanning exposure. The stages 2 and 4 are moved in synchronization with each other. More specifically, for example, the mask stage 2 is driven at a constant speed by driving the motor 12 at a constant voltage, and the laser interferometer is adjusted to a driving amount corresponding to the positions of the stages 2 and 4 measured by the laser interferometers 13 and 15. 1
The substrate stage 4 may be moved by supplying the motor 14 with a drive amount obtained by adding a drive amount corresponding to the position change amount measured in step 7. Although a mirror projection optical system is used as the projection optical system in the above description, a lens projection optical system can be used instead. Further, the length measuring device for measuring the amount of deformation of the main body structure is not necessarily limited to the laser interferometer, but may be a minute displacement measuring device such as a capacitance sensor.
【0026】[0026]
【発明の効果】以上説明したように本発明では、第1計
測手段と第2計測手段間の相対位置を計測する第3の計
測手段を有し、その相対位置をも考慮して第1移動手段
または第2移動手段を駆動することにより相対位置変化
により生じる同期誤差を補正するようにしたため、原版
(マスク)と基板(ウエハ)のそれぞれの位置を計測す
るための計測器を取り付けている本体構造体が走査露光
時の相対位置変化による同期位置誤差を補正することが
可能となり、マスクのパターンを基板上に高い配置精度
で転写することができる。これにより今後ますます進む
であろう半導体素子の高集積化、液晶表示板の高精細化
に十分対応可能である。As described above, the present invention has the third measuring means for measuring the relative position between the first measuring means and the second measuring means, and performs the first movement in consideration of the relative position. A main body having a measuring device mounted thereon for measuring the respective positions of the original (mask) and the substrate (wafer) because the synchronization error caused by the relative position change is corrected by driving the means or the second moving means. The structure can correct a synchronous position error caused by a relative position change at the time of scanning exposure, and the pattern of the mask can be transferred onto the substrate with high placement accuracy. As a result, it is possible to sufficiently cope with higher integration of semiconductor elements and higher definition of liquid crystal display panels, which will be further advanced in the future.
【図1】 本発明の一実施例に係る露光装置を示す概略
構成図である。FIG. 1 is a schematic configuration diagram showing an exposure apparatus according to one embodiment of the present invention.
【図2】 従来例に係る露光装置を示す概略構成図であ
る。FIG. 2 is a schematic configuration diagram showing an exposure apparatus according to a conventional example.
1:マスク、2:マスクステージ、3:基板、4:基板
ステージ、5:照明系、6:凹面鏡、7:凸面鏡、8:
折曲げ鏡、9:ベース定盤、10:マスクステージ定
盤、11:連結板、12,14:モータ、13,15,
17:測長器、16,20:制御回路、18:折曲げミ
ラー、19:架台。1: mask, 2: mask stage, 3: substrate, 4: substrate stage, 5: illumination system, 6: concave mirror, 7: convex mirror, 8:
Folding mirror, 9: base platen, 10: mask stage platen, 11: connecting plate, 12, 14: motor, 13, 15,
17: length measuring device, 16, 20: control circuit, 18: bending mirror, 19: mount.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/027 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/027
Claims (15)
原版の位置を計測する第1の計測手段、基板を移動させ
る第2の移動手段、前記基板の位置を計測する第2の計
測手段、前記原版上のパターンを照明する照明光学系、
および前記第1計測手段と第2計測手段の計測値に基づ
いて前記第1移動手段と前記第2移動手段の駆動を制御
する制御手段を有し、前記原版と基板を位置的に整合し
た状態で前記照明光学系に対して相対的に移動しながら
スキャン露光することにより前記原版上のパターンを前
記基板上に転写する走査型露光装置において、 前記第1計測手段と前記第2計測手段間の相対位置を計
測する第3の計測手段を有し、前記制御手段は、前記相
対位置をも考慮して前記第1移動手段または第2移動手
段を駆動することにより前記相対位置の変化により生じ
る前記整合状態の誤差を補正するものであることを特徴
とする走査型露光装置。1. A first moving means for moving an original, a first measuring means for measuring a position of the original, a second moving means for moving a substrate, and a second measuring means for measuring a position of the substrate. An illumination optical system for illuminating the pattern on the original,
And control means for controlling the driving of the first moving means and the second moving means based on the measurement values of the first measuring means and the second measuring means, wherein the original and the substrate are aligned in position. A scanning exposure apparatus for transferring a pattern on the original onto the substrate by performing scan exposure while relatively moving with respect to the illumination optical system, wherein the first measurement unit and the second measurement unit A third measuring unit that measures a relative position, wherein the control unit drives the first moving unit or the second moving unit in consideration of the relative position, and the control unit causes the change in the relative position. A scanning exposure apparatus for correcting an error in a matching state.
2計測手段の近傍に固定されたレーザ干渉計であり、そ
の近傍に位置しない前記第2または第1計測手段の位置
を計測するものであることを特徴とする請求項1記載の
デバイス製造装置。2. The third measuring means is a laser interferometer fixed near the first or second measuring means, and measures the position of the second or first measuring means not located near the first or second measuring means. The device manufacturing apparatus according to claim 1, wherein the device manufacturing apparatus is a device.
送りするごとに繰り返すステップアンドスキャン方式の
ものであることを特徴とする請求項1記載の走査型露光
装置。3. The scanning exposure apparatus according to claim 1, wherein the scanning exposure apparatus is of a step-and-scan method in which the scanning exposure is repeated every time the substrate is stepped.
は、この投影光学系を介して行うことを特徴とする請求
項1記載の走査型露光装置。4. A scanning exposure apparatus according to claim 1, further comprising a projection optical system, wherein said scanning exposure is performed via said projection optical system.
あることを特徴とする請求項4記載の走査型露光装置。5. A scanning exposure apparatus according to claim 4, wherein said projection optical system is a mirror projection optical system.
あることを特徴とする請求項4記載の走査型露光装置。6. The scanning exposure apparatus according to claim 4, wherein said projection optical system is a lens projection optical system.
ることを特徴とする請求項4〜6記載の走査型露光装
置。7. The scanning exposure apparatus according to claim 4, wherein said projection optical system is a reduction projection optical system.
第1および第2の計測手段により計測しつつ、その計測
結果に基づいて前記原版および基板を位置的に整合した
状態で照明光学系に対して相対的に移動させながらスキ
ャン露光することにより前記原版上のパターンを前記基
板上に転写するデバイス製造方法において、 第3の計測手段により前記第1および第2計測手段間の
相対位置を計測しつつ、この計測結果にも基づいて前記
整合した状態での移動を行うことを特徴とするデバイス
製造方法。8. The illumination optical system in a state where the position of the original and the position of the substrate are measured by the first and second measuring means, respectively, and the position of the original and the substrate are aligned based on the measurement results. A device for transferring the pattern on the original onto the substrate by scanning and exposing the substrate while moving relatively to each other, wherein a relative position between the first and second measuring units is measured by a third measuring unit. And performing movement in the aligned state based on the measurement result.
2計測手段の近傍に固定されたレーザ干渉計であり、そ
の近傍に位置しない前記第2または第1計測手段の位置
を計測するものであることを特徴とする請求項8記載の
デバイス製造方法。9. The third measuring means is a laser interferometer fixed near the first or second measuring means, and measures the position of the second or first measuring means which is not located near the first or second measuring means. The device manufacturing method according to claim 8, wherein
プ送りするごとに繰り返すステップアンドスキャン方式
の露光を行うことを特徴とする請求項8記載のデバイス
製造方法。10. The device manufacturing method according to claim 8, wherein the step-and-scan exposure is performed by repeating the scan exposure each time the substrate is stepped.
は、この投影光学系を介して行うことを特徴とする請求
項8記載のデバイス製造方法。11. The device manufacturing method according to claim 8, further comprising a projection optical system, wherein the scanning exposure is performed via the projection optical system.
であることを特徴とする請求項11記載のデバイス製造
方法。12. The device manufacturing method according to claim 11, wherein the projection optical system is a mirror projection optical system.
であることを特徴とする請求項11記載のデバイス製造
方法。13. The device manufacturing method according to claim 11, wherein said projection optical system is a lens projection optical system.
あることを特徴とする請求項11〜13記載のデバイス
製造方法。14. The device manufacturing method according to claim 11, wherein said projection optical system is a reduction projection optical system.
れ第1および第2の計測手段により計測しつつ、その計
測結果に基づいて前記原版および基板を同期させて移動
させながら、前記原版のパターンを前記基板上にスキャ
ン露光するデバイス製造方法であって、第3の計測手段
により前記第1および第2計測手段間の相対位置を計測
しつつ、この計測結果にも基づいて前記同期した移動を
行うデバイス製造方法により製造されることを特徴とす
るデバイス。15. A pattern of the original is measured while the position of the original and the position of the substrate are measured by first and second measuring means, respectively, and the original and the substrate are synchronously moved based on the measurement results. A device manufacturing method for performing scanning exposure on the substrate, wherein a third measuring unit measures a relative position between the first and second measuring units, and performs the synchronized movement based on the measurement result. A device manufactured by a device manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07308519A JP3126645B2 (en) | 1995-11-02 | 1995-11-02 | Scanning exposure apparatus, device manufacturing method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07308519A JP3126645B2 (en) | 1995-11-02 | 1995-11-02 | Scanning exposure apparatus, device manufacturing method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09129547A JPH09129547A (en) | 1997-05-16 |
| JP3126645B2 true JP3126645B2 (en) | 2001-01-22 |
Family
ID=17982009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07308519A Expired - Fee Related JP3126645B2 (en) | 1995-11-02 | 1995-11-02 | Scanning exposure apparatus, device manufacturing method and device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3126645B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7125654B2 (en) | 2002-07-01 | 2006-10-24 | Obayashiseikou Co., Ltd. | Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101907864B1 (en) * | 2014-03-28 | 2018-10-15 | 가부시키가이샤 니콘 | Mobile body apparatus, exposure apparatus, production method for flat panel display, production method for device, and drive method for mobile body |
| CN107727889B (en) * | 2017-11-20 | 2024-05-28 | 北京国网富达科技发展有限责任公司 | Auxiliary indication device for ultrasonic defects of grid-connected overhead lines |
| CN107831405B (en) * | 2017-11-20 | 2024-05-28 | 北京国网富达科技发展有限责任公司 | Ultrasonic and infrared comprehensive detection device with grid overhead lines |
-
1995
- 1995-11-02 JP JP07308519A patent/JP3126645B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7125654B2 (en) | 2002-07-01 | 2006-10-24 | Obayashiseikou Co., Ltd. | Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device |
| US7749688B2 (en) | 2002-07-01 | 2010-07-06 | Obayashiseikou Co., Ltd. | Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device |
| US9201309B2 (en) | 2002-07-01 | 2015-12-01 | Obayashiseikou Co., Ltd. | Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09129547A (en) | 1997-05-16 |
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