JP3025681B1 - Calibration method and potentiometric measuring device in potentiometric measurement - Google Patents
Calibration method and potentiometric measuring device in potentiometric measurementInfo
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- JP3025681B1 JP3025681B1 JP10286345A JP28634598A JP3025681B1 JP 3025681 B1 JP3025681 B1 JP 3025681B1 JP 10286345 A JP10286345 A JP 10286345A JP 28634598 A JP28634598 A JP 28634598A JP 3025681 B1 JP3025681 B1 JP 3025681B1
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- 238000005259 measurement Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000012545 processing Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 description 7
- 239000011800 void material Substances 0.000 description 5
- 238000011088 calibration curve Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004313 potentiometry Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- UNPLRYRWJLTVAE-UHFFFAOYSA-N Cloperastine hydrochloride Chemical compound Cl.C1=CC(Cl)=CC=C1C(C=1C=CC=CC=1)OCCN1CCCCC1 UNPLRYRWJLTVAE-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000003758 nuclear fuel Substances 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
【要約】
【課題】 電位差法による亀裂計測の精度向上を図る。
【解決手段】 亀裂Kが存在する厚さTの導電性の試料
1に一定電流を流した時に生じる亀裂部の電圧降下をE
とする。また、亀裂Kが無い部位の電圧降下をEoとす
る。この時、亀裂深さaの変化に対する電位差比E/E
oの変化を校正近似式 E/Eo=1+f(a)/(T
−a)と表す。この校正近似式に基づいて前記電位差比
E/Eoと前記亀裂深さaの関係を校正する。An object of the present invention is to improve the accuracy of crack measurement by a potential difference method. SOLUTION: When a constant current is applied to a conductive sample 1 having a thickness T with a crack K, a voltage drop at a crack portion caused by a constant current is represented by E
And Further, a voltage drop at a portion where there is no crack K is defined as Eo. At this time, the potential difference ratio E / E with respect to the change in the crack depth a
The change in o is calibrated by the approximate equation E / Eo = 1 + f (a) / (T
-A). The relationship between the potential difference ratio E / Eo and the crack depth a is calibrated based on this approximate calibration formula.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電位差法による計
測データを各種寸法に換算する際の校正方法、およびこ
の校正方法を適用した電位差法計測装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a calibration method for converting measurement data obtained by a potential difference method into various dimensions, and a potential difference measurement apparatus to which the calibration method is applied.
【0002】[0002]
【従来の技術】従来より、導電性物質の亀裂・傷等の欠
陥の有無を非破壊試験にて検査・測定する一手段とし
て、電位差法を用いた計測方法が知られている。2. Description of the Related Art A measuring method using a potential difference method has been known as a means for inspecting and measuring the presence or absence of a defect such as a crack or a scratch in a conductive material by a nondestructive test.
【0003】この電位差法計測とは、例えば、金属等の
導電性材料に亀裂等が存在する場合、この導電性材料に
所定電圧を引加した際、亀裂部を跨いで流れる電流で生
ずる電圧降下が亀裂の深さに関係することに着目して成
された亀裂計測である。[0003] This potential difference measurement means, for example, when a crack or the like exists in a conductive material such as a metal, a voltage drop caused by a current flowing across the crack portion when a predetermined voltage is applied to the conductive material. Is a crack measurement made by focusing on the fact that it is related to the crack depth.
【0004】例えば、図4に示すように、直方体の導電
性試料1に深さが均一な亀裂Kが存在しているとする。For example, as shown in FIG. 4, it is assumed that a rectangular parallelepiped conductive sample 1 has a crack K with a uniform depth.
【0005】定電流電源により、この直方体に亀裂Kを
横切る一定電流Iを流し、その時発生する亀裂部(亀裂
Kを含む一定区間L)の電圧降下を電圧計にて測定す
る。この電圧降下は亀裂Kの大きさに依存するので、そ
の電圧値から亀裂深さaを換算することができる。これ
が電位差法による亀裂計測の基本的な考え方である。[0005] A constant current I is applied to the rectangular parallelepiped through the crack K by a constant current power supply, and a voltage drop at a crack portion (a constant section L including the crack K) generated at that time is measured by a voltmeter. Since this voltage drop depends on the size of the crack K, the crack depth a can be converted from the voltage value. This is the basic idea of crack measurement by the potential difference method.
【0006】しかしながら、実際は、単純に寸法と抵抗
率からオームの法則を適用することで電圧降下とその時
の亀裂深さとの関係を正確に求めることは困難である。
これは次の理由によるものである。However, in practice, it is difficult to accurately determine the relationship between the voltage drop and the crack depth at that time by simply applying Ohm's law from the dimensions and the resistivity.
This is for the following reason.
【0007】すなわち、亀裂の厚みと導通している部分
の断面積および導電率とで求めた電気抵抗値を使ってオ
ームの法則を適用すると、算出される亀裂部での電圧降
下は極めて小さな値となるが、実際はそれより大きな電
圧降下が発生している。これは、亀裂は事実上殆ど厚み
を持っていないため、亀裂近傍の亀裂と平行な断面を横
切る電流の分布が一様にはならないという理由によるも
のであり、それ故、亀裂近傍における導体断面内の電流
分布を考慮せず、単純に電流密度を一定であるとして電
気抵抗値を求めると、算出される電圧降下は上記のよう
な誤差を含むものとなるのである。That is, when Ohm's law is applied using the electrical resistance value obtained from the thickness of the crack and the cross-sectional area and conductivity of the conducting part, the calculated voltage drop at the crack is extremely small. However, a larger voltage drop actually occurs. This is due to the fact that the crack has virtually no thickness, and the distribution of current across the cross section parallel to the crack near the crack is not uniform, and therefore the conductor cross section near the crack If the electric resistance value is calculated simply assuming that the current density is constant without considering the current distribution, the calculated voltage drop includes the above-described error.
【0008】このため、通常は、亀裂深さが異なる標準
試料を多数計測し、その際、取得した校正データ(亀裂
部の電圧降下)より亀裂の無い場合を基準とした電位差
比を算出すると共に、この電位差比と亀裂深さとの関係
を表す校正曲線を求めておいて、これを基に、実測した
測定対象物の電位差比を亀裂深さに換算するという校正
方法が行われていた。For this reason, usually, a large number of standard samples having different crack depths are measured, and at that time, the potential difference ratio based on the case where there is no crack is calculated from the acquired calibration data (voltage drop at the crack portion). A calibration method has been performed in which a calibration curve representing the relationship between this potential difference ratio and the crack depth is obtained, and the actually measured potential difference ratio of the object to be measured is converted into the crack depth based on this.
【0009】その一例を挙げれば、上記校正曲線を求め
る際、電位差比をE/Eo、亀裂深さをaとして下式1
に示すような多項式を使用し、その係数A,B,C,D
を最小二乗法で求めることによって校正式を得ていた。For example, when the calibration curve is obtained, the potential difference ratio is E / Eo, and the crack depth is a.
And the coefficients A, B, C, D
Was obtained by the least-squares method.
【式1】 E/Eo=Aa3+Ba2+Ca+D[Equation 1] E / Eo = Aa3 + Ba2 + Ca + D
【0010】また、亀裂深さa=0の時、電位差比E/
Eo=1(E=Eo)は明らかであるので、係数Dを1
として他の係数A,B,Cを求める方法も行われてい
た。When the crack depth a = 0, the potential difference ratio E /
Since Eo = 1 (E = Eo) is clear, the coefficient D is set to 1
A method of obtaining other coefficients A, B, and C has also been performed.
【0011】[0011]
【発明が解決しようとする課題】ところが、上記多項式
1は電気的な裏付けを無視した近似式であったため、校
正データの取得範囲外に対しては殆ど使用できないもの
であり、また、校正データの取得範囲内であっても、多
項式1の次数を適切に選定しないと校正曲線が異常なも
のとなる場合があった。However, since the above polynomial 1 is an approximation that disregards the electrical backing, it cannot be used outside the acquisition range of the calibration data. Even within the acquisition range, the calibration curve may be abnormal unless the order of the polynomial 1 is properly selected.
【0012】このような理由から、従来の多項式による
近似では、予め校正データを広範囲にわたって取得して
おく必要があり、かつ使用する近似式の不適切さから、
高い換算精度は望めなかった。For these reasons, in the approximation using the conventional polynomial, it is necessary to acquire calibration data in advance over a wide range, and the approximation formula used is inappropriate.
High conversion accuracy could not be expected.
【0013】本発明は、校正曲線の近似式に電気的な意
味付けを行うことにより、電位差法により求めた計測デ
ータを各種寸法に換算する際の精度を向上させると共
に、その際の演算処理を単純化し、校正操作の容易化を
図ることを目的としたものである。The present invention improves the accuracy in converting measurement data obtained by the potential difference method into various dimensions by giving an electrical meaning to the approximation formula of the calibration curve, and performs an arithmetic process at that time. It is intended to simplify and facilitate the calibration operation.
【0014】[0014]
【課題を解決するための手段】すなわち、請求項1に記
載の本発明では、亀裂(K)が存在する厚さ(T)の導
電性の試料(1)に一定電流を流した時に生じる亀裂部
の電圧降下を(E)とし、亀裂(K)の無い部位の電圧
降下を(Eo)とし、定数項を持たない亀裂深さaの関
数をf(a)とした時、亀裂深さ(a)の変化に対する
電位差比(E/Eo)の変化を校正近似式 E/Eo=
1+f(a)/(T−a)と表し、この校正近似式に基
づいて前記電位差比(E/Eo)と前記亀裂深さ(a)
の関係を校正するものである。According to the first aspect of the present invention, a crack generated when a constant current is applied to a conductive sample (1) having a thickness (T) in which a crack (K) exists. the voltage drop parts and (E), cracking sites voltage drop without (K) and (Eo), crack depth a which does not have a constant term Seki
When the number is f (a), the change in the potential difference ratio (E / Eo) with respect to the change in the crack depth (a) is calculated by a calibration approximation E / Eo =
1 + f (a) / (T−a), and based on this calibration approximation formula, the potential difference ratio (E / Eo) and the crack depth (a)
Is to calibrate the relationship.
【0015】また、請求項2に記載の本発明では、導電
性の試料(1)に存在する亀裂(K)を横切る方向に一
定電流(I)を供給する定電流電源(2)と、この電流
(I)で生じる亀裂部の電圧降下(E)と亀裂(K)の
無い部位の電圧降下(Eo)を測定する電圧計測装置
(3)と、この電圧計測装置(3)の測定出力(E,E
o)に基づいて請求項1に記載の電位差法計測における
校正方法により前記試料(1)の亀裂深さ(a)を算出
する演算処理装置(4)とで構成されるものである。Further, according to the present invention, a constant current power supply (2) for supplying a constant current (I) in a direction crossing a crack (K) existing in the conductive sample (1); A voltage measuring device (3) for measuring a voltage drop (E) at a crack portion generated by the current (I) and a voltage drop (Eo) at a portion without a crack (K), and a measurement output ( E, E
An arithmetic processing unit (4) for calculating the crack depth (a) of the sample (1) by the calibration method in the potentiometric method according to claim 1 based on o).
【0016】[0016]
【0017】[0017]
【発明の実施の形態】既述した近似多項式1による校正
は電気的な裏付けを無視したものであって、校正データ
から校正近似式を求める時に誤差を生じ易いものであっ
たことから、本実施形態では従来とは別の新たな校正近
似式を設定した。そこで先ず、この近似式の電気的な裏
付けを行うことにする。DESCRIPTION OF THE PREFERRED EMBODIMENTS The calibration based on the approximation polynomial 1 described above disregards the electric support and is likely to cause an error when obtaining the calibration approximation from the calibration data. In the embodiment, a new calibration approximation formula different from the conventional one is set. Therefore, first, the electrical confirmation of this approximate expression will be performed.
【0018】以下にその詳細を説明すれば、図4に示す
導電性試料1において、亀裂が存在しない場合の電圧降
下を基準とした電位差比E/Eoは亀裂深さa=0の時
1となり、また亀裂深さaが板厚Tに達した時無限大と
なる。The details will be described below. In the conductive sample 1 shown in FIG. 4, the potential difference ratio E / Eo based on the voltage drop when no crack is present becomes 1 when the crack depth a = 0. When the crack depth a reaches the plate thickness T, it becomes infinite.
【0019】そこで、本発明では、亀裂深さa=0で電
位差比E/Eo=1の条件に加え、亀裂深さa=板厚T
で電位差比E/Eo=∞の条件を考慮に入れて下式2に
示す近似式を設定した。式2において、Eは亀裂部の電
圧降下、Eoは亀裂が存在しない部位の電圧降下、f
(a)は定数項を持たないaの関数、Tは試料の厚さ、
aは亀裂深さである。Therefore, in the present invention, in addition to the condition that the crack depth a = 0 and the potential difference ratio E / Eo = 1, the crack depth a = the plate thickness T
In consideration of the condition of the potential difference ratio E / Eo = ∞, an approximate expression shown in the following expression 2 was set. In Equation 2, E is a voltage drop at a crack, Eo is a voltage drop at a portion where no crack exists, f
(A) is a function of a having no constant term, T is the thickness of the sample,
a is the crack depth.
【式2】 E/Eo=1+f(a)/(T−a)[Equation 2] E / Eo = 1 + f (a) / (Ta)
【0020】ところで、厚さT、幅W、長さLの直方体
試料の電気抵抗Roは試料の電気抵抗率をρとすると下
式3で表すことができる。Incidentally, the electric resistance Ro of a rectangular parallelepiped sample having a thickness T, a width W and a length L can be expressed by the following formula 3 where the electric resistivity of the sample is ρ.
【式3】 Ro=ρL/(TW)[Formula 3] Ro = ρL / (TW)
【0021】次ぎに、この直方体試料の長手方向の中央
に厚さ方向に向う深さaのスリットKが存在する場合の
電気抵抗Rを求める。さらにここでは、スリットKの近
傍では導体断面内の電流分布が均一でない事実を考慮に
入れる。Next, the electric resistance R in the case where there is a slit K having a depth a in the thickness direction at the center in the longitudinal direction of the rectangular parallelepiped sample is determined. In addition, the fact that the current distribution in the conductor cross section is not uniform near the slit K is taken into account here.
【0022】スリットKは電流を通さないので、図3
(a)に示すようにスリットKの両側には斜線で示すよ
うな電流の流れ難い部分が存在すると仮定できる。ま
た、この電流の流れ難い部分は、図3(b)のように直
方体試料が断面三角形に削り取られたのと等価であるの
で、図3(c)のように断面三角形部分をこれと同面積
のスリット幅bの断面矩形に置き換えると、求める電気
抵抗Rは下式4で表すことができる。Since the slit K does not conduct current, FIG.
As shown in (a), it can be assumed that there are portions where the current does not easily flow as shown by hatching on both sides of the slit K. The portion where the current hardly flows is equivalent to the rectangular parallelepiped sample being cut into a triangular cross section as shown in FIG. 3 (b). Therefore, as shown in FIG. The electric resistance R to be obtained can be expressed by the following equation (4).
【式4】 R=ρ(L−b)/(TW)+ρb/(W
(T−a))Equation 4 R = ρ (L−b) / (TW) + ρb / (W
(Ta))
【0023】電流が一定の場合、電圧降下は電気抵抗値
に比例するので電位差比E/Eoは下式5として表すこ
とができる。When the current is constant, the voltage drop is proportional to the electric resistance, and the potential difference ratio E / Eo can be expressed by the following equation (5).
【式5】 E/Eo=R/Ro=1+ab/(L(T
−a))Equation 5 E / Eo = R / Ro = 1 + ab / (L (T
-A))
【0024】ここで、スリット幅bはスリットKによっ
て電流が遮られた部分に相当する試料の欠落分であると
すると、bはスリットKの深さaにのみ依存する関数f
(a)として表すことができる。Here, assuming that the slit width b is a missing portion of the sample corresponding to a portion where the current is interrupted by the slit K, b is a function f dependent only on the depth a of the slit K.
(A).
【0025】よって、式2と式4は等価であるから、下
式6が成立する。Therefore, Equation 2 and Equation 4 are equivalent, and the following Equation 6 holds.
【式6】 E/Eo=1+ab/(L(T−a))=
1+f(a)/(T−a)[Equation 6] E / Eo = 1 + ab / (L (T−a)) =
1 + f (a) / (Ta)
【0026】これより、上記した校正近似式2は電気的
に意味付けされた近似式であるといえる。From this, it can be said that the above-mentioned calibration approximation formula 2 is an approximation formula that is electrically meaningful.
【0027】次ぎに、本発明に係る電位差法亀裂計測に
ついて説明する。Next, a description will be given of the potential difference method crack measurement according to the present invention.
【0028】図1は本発明の電位差法における校正方法
を適用した亀裂計測装置の一実施形態を示す概略ブロッ
ク構成図である。FIG. 1 is a schematic block diagram showing an embodiment of a crack measuring device to which a calibration method in the potential difference method according to the present invention is applied.
【0029】図中、1は亀裂Kが存在する板厚Tの導電
性直方体試料1である。本亀裂計測装置は、この試料1
の亀裂Kを横切る方向に一定電流を供給するための定電
流電源2と、この時発生する亀裂部分の電圧降下を測定
する電圧計測装置としての高精度電圧計3と、この高精
度電圧計3の測定値より亀裂深さを算出する演算処理装
置4とにより構成されている。また、この亀裂計測装置
には、前記試料1として後述する校正近似式を導き出す
ための標準試料と実際の亀裂計測を行う測定対象試料の
何れか一方が適時接続される。In the drawing, reference numeral 1 denotes a conductive rectangular parallelepiped sample 1 having a thickness T in which a crack K exists. This crack measuring device uses this sample 1
A constant current power supply 2 for supplying a constant current in a direction crossing the crack K, a high-precision voltmeter 3 as a voltage measuring device for measuring a voltage drop of a crack portion generated at this time, and the high-precision voltmeter 3 And an arithmetic processing unit 4 for calculating the crack depth from the measured values of the above. In addition, one of a standard sample for deriving a calibration approximation formula to be described later and a sample to be actually measured for crack measurement is appropriately connected to the crack measuring device as the sample 1.
【0030】前記定電流電源2は直流電源であっても交
流電源であっても良く、また、電流は試料1全体にわた
って一様に流すようにしても良いし、あるいは、計測対
象部分にのみ局部的に流すようにしても良い。但し、何
れの場合も、標準試料の計測と測定対象試料の計測は同
一条件で実施する必要がある。The constant current power supply 2 may be a DC power supply or an AC power supply. The current may be made to flow uniformly over the entire sample 1 or a local current may be applied only to the portion to be measured. You may make it flow. However, in any case, the measurement of the standard sample and the measurement of the measurement target sample must be performed under the same conditions.
【0031】次ぎに、図2のデータ処理フロー図に基づ
いて本亀裂計測装置における亀裂計測の処理動作を説明
する。Next, the processing operation of crack measurement in the present crack measuring device will be described based on the data processing flowchart of FIG.
【0032】本計測処理は前記演算処理装置4にて行わ
れるものであって、機能上、さらに校正部と計測部に大
別される。This measurement processing is performed by the arithmetic processing unit 4, and is roughly divided into a calibration section and a measurement section in terms of function.
【0033】校正部では、亀裂等の寸法が既知の標準試
料1を多数計測して得た校正データを基に前記式2で示
した校正近似式を作成するための処理が実行される。The calibrating unit executes a process for creating a calibration approximation formula represented by the above formula 2 based on calibration data obtained by measuring a large number of standard samples 1 having known dimensions such as cracks.
【0034】以下にその詳細を説明すれば、先ず、ステ
ップ11で多数用意された標準試料1の電位差、すなわ
ち、亀裂Kの存在する各標準試料1の亀裂部分の電位差
Esと亀裂Kの無い標準試料1の電位差Esoを計測す
る。また、ステップ12で前記各標準試料1の亀裂深さ
as(人工スリットの場合は、そのスリット深さ)を計
測する。The details will be described below. First, the potential difference between the standard samples 1 prepared in a large number in step 11, that is, the potential difference Es of the crack portion of each of the standard samples 1 having cracks K and the standard difference without cracks K The potential difference Eso of the sample 1 is measured. In step 12, the crack depth as (the slit depth in the case of an artificial slit) of each of the standard samples 1 is measured.
【0035】次ぎに、ステップ13で亀裂K(またはス
リット)が無い標準試料1を計測した時の電位差Eso
を基準として、亀裂K(またはスリット)が存在する標
準試料1を計測した時の電位差Esとの比、すなわち電
位差比Es/Esoを算出し、ステップ14でこの電位
差比Es/Esoと前記ステップ12で得られた各標準
試料1の亀裂深さの実測値asの対応表を作成する。Next, in step 13, the potential difference Eso when the standard sample 1 having no crack K (or slit) was measured.
Is calculated, the ratio of the potential difference Es when the standard sample 1 having the crack K (or slit) is measured, that is, the potential difference ratio Es / Eso is calculated. A correspondence table of the actually measured values “as” of the crack depths of the respective standard samples 1 obtained in the above is prepared.
【0036】ステップ15では式2における亀裂深さa
の関数f(a)として、定数項を持たない適当な数式を
代入し(本実施形態では2次式を使用)、例えば、下式
7に示すような校正近似式を設定すると共に、前記ステ
ップ14で作成した電位差比Es/Esoと亀裂深さa
sの対応表を参照して、最小二乗法により上式7の未定
係数αおよびβを算出する。In step 15, the crack depth a in equation (2)
As a function f (a), an appropriate mathematical expression having no constant term is substituted (in the present embodiment, a quadratic expression is used). Potential difference ratio Es / Eso and crack depth a prepared in 14
With reference to the correspondence table of s, the undetermined coefficients α and β of Equation 7 are calculated by the least squares method.
【式7】 Es/Eso=1+(αas+β)as/
(T−as)[Equation 7] Es / Eso = 1 + (αas + β) as /
(T-as)
【0037】一方、計測部では、測定対象試料1におけ
る電位差比より実際の亀裂深さを換算するための処理が
実行される。On the other hand, the measuring section executes a process for converting the actual crack depth from the potential difference ratio in the sample 1 to be measured.
【0038】以下にその詳細を説明すれば、先ず、ステ
ップ21で測定対象試料1の電位差、すなわち、亀裂部
の電位差Eと亀裂が無い部位の電位差Eoを計測し、ス
テップ22で上記計測値E、Eoより電位差比E/Eo
を算出する。The details will be described below. First, in step 21, the potential difference of the sample 1 to be measured, that is, the potential difference E of the crack portion and the potential difference Eo of the portion having no crack are measured, and in step 22, the measured value E is measured. Potential difference ratio E / Eo from Eo
Is calculated.
【0039】次ぎに、ステップ23で前記校正近似式7
と同一の下式8を用いて亀裂深さaを算出し、ステップ
24で算出された測定対象試料1の亀裂深さの値を出力
する。この際、未定係数αおよびβとしては、前記ステ
ップ15で算出した数値が代入される。Next, at step 23, the calibration approximate expression 7
Then, the crack depth a is calculated using the same equation (8), and the value of the crack depth of the sample 1 to be measured calculated in step 24 is output. At this time, the numerical values calculated in step 15 are substituted for the undetermined coefficients α and β.
【式8】 E/E0=1+(αa+β)a/(T−a)[Equation 8] E / E0 = 1 + (αa + β) a / (T−a)
【0040】以上が本発明の演算処理動作であるが、前
記式5において、実験的あるいは解析的にaとbとの間
の規則性が確認できれば、本演算処理において標準試料
の計測値による近似を行わなくとも測定対象試料の形状
や寸法等の測定データより校正近似式を得ることも可能
となる。The above is the calculation processing operation of the present invention. If the regularity between “a” and “b” can be confirmed experimentally or analytically in the above equation 5, the calculation processing approximates the measured value of the standard sample. It is also possible to obtain an approximate calibration equation from measurement data such as the shape and dimensions of the sample to be measured without performing the above.
【0041】また、本実施形態では、導電性物質に存在
する亀裂深さの測定について説明したが、本発明による
電位差法計測による測定対象はこれに限定されるもので
はなく、以下のような測定に対しても十分適用できるも
のである。In the present embodiment, the measurement of the crack depth existing in the conductive material has been described. However, the object to be measured by the potential difference measurement according to the present invention is not limited to this, and the following measurement is performed. It can be applied sufficiently to
【0042】その具体例を幾つか説明すれば、先ず一つ
の適用例としては導電性物品の寸法測定である。A description will be given of some concrete examples. First, one application example is measurement of dimensions of a conductive article.
【0043】例えば、導電性物品に設けられている切り
欠き(切り込み)の寸法や孔の深さ等を電位差法で計測
する場合、本発明の校正方法を適用することで精度の高
い測定が可能である。For example, when measuring the size of a notch (notch) provided in a conductive article, the depth of a hole, and the like by a potential difference method, highly accurate measurement is possible by applying the calibration method of the present invention. It is.
【0044】また、別の適用例としては、ボイド率の測
定である。Another application example is measurement of void fraction.
【0045】導電性物質のボイドは電流を通さないこと
から、これを亀裂や切り欠きと等価であると見なし、例
えば、亀裂深さの代わりにボイド率を用いて本校正近似
式を使用することで金属等導電性の物質を接合した時の
接合面におけるボイド率を計測することができる。Since the void of the conductive material does not conduct current, it is considered that the void is equivalent to a crack or a notch. For example, use this approximate calibration formula by using the void fraction instead of the crack depth. It is possible to measure the void ratio at the joint surface when a conductive substance such as a metal is joined by the method.
【0046】さらに別の適用例としては、液体、あるい
は固体、あるいは気体の特性計測である。As still another application example, it is a characteristic measurement of a liquid, a solid, or a gas.
【0047】例えば、切り込み(または亀裂)や異物が
割り込んだ導電性の固体、あるいはそのような容器に入
った導電性の液体や気体(プラズマ)の物性を調べる場
合、切り込み(または亀裂)や異物の寸法が解れば、標
準試料の電位差との比較から本校正近似式を使用してそ
の物質の導電率を求めることができる。さらに、導電率
とその物質の特性との関連付けが明らかであれば、その
物質の特性を計測できる。For example, when examining the properties of a conductive solid cut by a cut (or crack) or foreign matter, or a conductive liquid or gas (plasma) in such a container, the cut (or crack) or foreign matter , The conductivity of the substance can be determined from the comparison with the potential difference of the standard sample using the approximate equation for calibration. Furthermore, if the association between the conductivity and the property of the substance is clear, the property of the substance can be measured.
【0048】[0048]
【発明の効果】以上説明したように、請求項1に記載の
本発明によれば、校正近似式として電気的な裏付けを持
った近似式を設定することにより、電位差法による亀裂
計測の校正精度が向上し、校正データの取得範囲外に対
しても精度の良い計測が可能となる。As described above, according to the first aspect of the present invention, by setting an approximation formula having electrical backing as a calibration approximation formula, the calibration accuracy of the crack measurement by the potential difference method is set. Is improved, and accurate measurement can be performed even outside the acquisition range of the calibration data.
【0049】また、請求項2に記載の本発明によれば、
上記校正近似式が比較的単純な式で表せるため、計算機
等を使用して校正を行う場合に、その処理プログラムを
単純化できると共に、校正操作も容易になる。According to the present invention described in claim 2,
Since the calibration approximation formula can be expressed by a relatively simple formula, when calibration is performed using a computer or the like, the processing program can be simplified and the calibration operation is also facilitated.
【0050】[0050]
【図1】本発明の亀裂計測装置の一実施形態を示す概略
ブロック構成図である。FIG. 1 is a schematic block diagram showing an embodiment of a crack measuring device according to the present invention.
【図2】同、亀裂計測装置の処理動作示すデータ処理フ
ロー図である。FIG. 2 is a data processing flowchart showing a processing operation of the crack measuring device.
【図3】導電性試料のスリット部分の電気抵抗値を算出
するための説明図である。FIG. 3 is an explanatory diagram for calculating an electric resistance value of a slit portion of a conductive sample.
【図4】電位差法による亀裂計測の原理を示す図であ
る。FIG. 4 is a diagram showing the principle of crack measurement by a potential difference method.
1 試料 2 定電流電源 3 電圧計測装置 4 演算処理装置 K 亀裂 Reference Signs List 1 sample 2 constant current power supply 3 voltage measuring device 4 arithmetic processing unit K crack
───────────────────────────────────────────────────── フロントページの続き (72)発明者 深作 博 茨城県東茨城郡大洗町成田町4002 核燃 料サイクル開発機構 大洗工学センター 内 東興機械工業株式会社内 (56)参考文献 特開 昭63−144296(JP,A) 特開 平4−186102(JP,A) 特開 平6−201632(JP,A) 日本機械学会東北支部地方講演会講演 論文集(1996),p.28−30、論文番号 111、「近接端子を用いた直流電位差法 によるき裂計測の感度向上」 (58)調査した分野(Int.Cl.7,DB名) G01N 27/00 - 27/24 JICSTファイル(JOIS)──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hiroshi Fukasaku 4002 Narita-cho, Oarai-machi, Higashiibaraki-gun, Ibaraki Japan Nuclear Fuel Cycle Development Organization Oarai Engineering Center Inside Toko Machinery Co., Ltd. (JP, A) JP-A-4-186102 (JP, A) JP-A-6-201632 (JP, A) Proceedings of the Japan Society of Mechanical Engineers Tohoku Regional Lectures (1996), p. 28-30, Paper No. 111, "Improvement in Sensitivity of Crack Measurement by DC Potentiometric Method Using Proximity Terminals" (58) Fields investigated (Int. Cl. 7 , DB name) G01N 27/00-27/24 JICST File (JOIS)
Claims (2)
性の試料(1)に一定電流を流した時に生じる亀裂部の
電圧降下を(E)とし、亀裂(K)が無い部位の電圧降
下を(Eo)とし、定数項を持たない亀裂深さaの関数
をf(a)とした時、 亀裂深さ(a)の変化に対する電位差比(E/Eo)の
変化を校正近似式 E/Eo=1+f(a)/(T−
a)と表し、 この校正近似式に基づいて前記電位差比(E/Eo)と
前記亀裂深さ(a)の関係を校正することを特徴とする
電位差法計測における校正方法。1. A voltage drop at a crack portion generated when a constant current is applied to a conductive sample (1) having a thickness (T) in which a crack (K) exists, is defined as (E), and there is no crack (K). A function of the crack depth a without the constant term, where the voltage drop at the site is (Eo)
Where f (a) is the change in the potential difference ratio (E / Eo) with respect to the change in the crack depth (a), the calibration approximation E / Eo = 1 + f (a) / (T−
a) a calibration method in potentiometric measurement, wherein the relationship between the potential difference ratio (E / Eo) and the crack depth (a) is calibrated based on the calibration approximation formula.
(K)を横切る方向に一定電流(I)を供給する定電流
電源(2)と、 この電流(I)で生じる亀裂部の電圧降下(E)と亀裂
(K)の無い部位の電圧降下(Eo)を測定する電圧計
測装置(3)と、 この電圧計測装置(3)の測定出力(E,Eo)に基づ
いて請求項1に記載の電位差計測における校正方法によ
り前記試料(1)の亀裂深さ(a)を算出する演算処理
装置(4)とで構成されることを特徴とする電位差法計
測装置。2. A constant current power supply (2) for supplying a constant current (I) in a direction crossing a crack (K) existing in a conductive sample (1), and a voltage at a crack generated by the current (I). A voltage measuring device (3) for measuring a voltage drop (Eo) at a portion where there is no drop (E) and a crack (K), and a measurement output (E, Eo) of the voltage measuring device (3). And an arithmetic processing unit (4) for calculating the crack depth (a) of the sample (1) by the calibration method in the potential difference measurement described in (1).
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|---|---|---|---|
| JP10286345A JP3025681B1 (en) | 1998-10-08 | 1998-10-08 | Calibration method and potentiometric measuring device in potentiometric measurement |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10286345A JP3025681B1 (en) | 1998-10-08 | 1998-10-08 | Calibration method and potentiometric measuring device in potentiometric measurement |
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| Publication Number | Publication Date |
|---|---|
| JP3025681B1 true JP3025681B1 (en) | 2000-03-27 |
| JP2000111509A JP2000111509A (en) | 2000-04-21 |
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ID=17703194
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| JP10286345A Expired - Fee Related JP3025681B1 (en) | 1998-10-08 | 1998-10-08 | Calibration method and potentiometric measuring device in potentiometric measurement |
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1998
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Non-Patent Citations (1)
| Title |
|---|
| 日本機械学会東北支部地方講演会講演論文集(1996),p.28−30、論文番号111、「近接端子を用いた直流電位差法によるき裂計測の感度向上」 |
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| Publication number | Publication date |
|---|---|
| JP2000111509A (en) | 2000-04-21 |
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