JP3089645B2 - Liquid jet head and method of manufacturing the same - Google Patents
Liquid jet head and method of manufacturing the sameInfo
- Publication number
- JP3089645B2 JP3089645B2 JP10803290A JP10803290A JP3089645B2 JP 3089645 B2 JP3089645 B2 JP 3089645B2 JP 10803290 A JP10803290 A JP 10803290A JP 10803290 A JP10803290 A JP 10803290A JP 3089645 B2 JP3089645 B2 JP 3089645B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure chamber
- crystal silicon
- nozzle
- silicon substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007788 liquid Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 claims description 40
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 15
- 238000000206 photolithography Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000004070 electrodeposition Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 230000000149 penetrating effect Effects 0.000 description 7
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はインクジェットプリンタ等に用いられる液体
噴射ヘッド及びその製造方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid jet head used for an ink jet printer and the like, and a method for manufacturing the same.
［従来の技術］ 従来のインクジェットプリンタにおける液体噴射ヘッ
ドは、小林正人他（画像電子学会誌12巻４号pp.277〜28
4,1983）等に示されるごとく、基板と該基板に対向して
設ける可動板により形成されていた。また特公昭60−89
53に示されるごとく、自由端を有する棒の曲げ振動を利
用した液体噴射ヘッドも存在する。[Prior Art] A liquid jet head in a conventional inkjet printer is disclosed by Masato Kobayashi et al. (Journal of Image Electronics Society, Vol. 12, No. 4, pp. 277-28).
4,1983) and the like, it has been formed by a substrate and a movable plate provided to face the substrate. In addition, Japanese Patent Publication No. 60-89
As shown in 53, there is a liquid ejecting head utilizing bending vibration of a rod having a free end.
［発明が解決しようとする課題］ 従来の、基板と可動板によりなる液体噴射ヘッドにお
いては、該可動板に圧電素子を貼り付けていたため、該
圧電素子を微細化するのが困難であり、このため液体噴
射を行うノズルの高密度化や、ノズルをライン状に長尺
に形成するマルチノズル化が困難であった。また特公昭
60−8953に示される、自由端を有する棒の曲げ振動を利
用した液体噴射ヘッドも、櫛状に製作した棒を取り付け
る構造であるため、棒の製作やノズルとの位置合わせ等
の問題があり、このためノズルの高密度化やマルチノズ
ル化が困難であった。また、いずれの液体噴射ヘッドに
おいても組立が煩雑であるため、該液体噴射ヘッドは高
価なものとなっていた。[Problem to be Solved by the Invention] In a conventional liquid ejecting head including a substrate and a movable plate, a piezoelectric element is attached to the movable plate, so that it is difficult to miniaturize the piezoelectric element. Therefore, it has been difficult to increase the density of nozzles for performing liquid ejection and to form multi-nozzles in which nozzles are formed in a long line. Also Tokuaki Akira
The liquid jet head using the bending vibration of a rod having a free end shown in 60-8933 also has a problem in that the rod is manufactured in a comb shape, and the alignment with a nozzle or the like is problematic. For this reason, it has been difficult to increase the density of the nozzles and to form a multi-nozzle. Further, the assembly of any of the liquid ejecting heads is complicated, so that the liquid ejecting head is expensive.
本発明の目的は、圧力室とノズル等の位置合わせが容
易、かつ精度良く製造可能で、ノズルの高密度化、マル
チノズル化が容易な液体噴射ヘッド及びその製造方法を
提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid ejecting head which can easily and accurately manufacture a pressure chamber and a nozzle or the like, can easily increase the density of a nozzle, and can easily form a multi-nozzle, and a method of manufacturing the same.
［課題を解決するための手段］ 本発明の液体噴射ヘッドによれば、エッチングにより
圧力室となる凹部が形成された単結晶珪素基板と、該単
結晶珪素基板上にスパッタ法、蒸着法、電着法等の薄膜
形成技術により形成された層と、該層の前記圧力室と対
向する位置に形成されたノズルと、前記圧力室と対向す
る位置に薄膜形成技術及びフォトリソグラフィー技術に
より形成された圧電素子とを備えたことを特徴とする。[Means for Solving the Problems] According to the liquid ejecting head of the present invention, a single crystal silicon substrate in which a recess serving as a pressure chamber is formed by etching, a sputtering method, an evaporation method, A layer formed by a thin film forming technique such as a deposition method, a nozzle formed at a position of the layer facing the pressure chamber, and a nozzle formed at a position facing the pressure chamber by a thin film forming technique and a photolithography technique. And a piezoelectric element.
また、本発明の液体噴射ヘッドの製造方法によれば、
単結晶珪素基板の一方の面上にスパッタ法、蒸着法、電
着法等の薄膜形成技術により層を形成する工程と、該層
にノズルとなる開口をエッチングにより形成する工程
と、前記ノズルに連通する圧力室となる凹部を前記単結
晶珪素基板の他方の面側からエッチングにより形成する
工程と、前記圧力室に対向する圧電素子を薄膜形成技術
及びフォトリソグラフィー技術により形成する工程とを
有することを特徴とする。According to the method of manufacturing a liquid jet head of the present invention,
A step of forming a layer on one surface of a single crystal silicon substrate by a thin film formation technique such as a sputtering method, an evaporation method, or an electrodeposition method; a step of forming an opening serving as a nozzle in the layer by etching; A step of forming a recess serving as a communicating pressure chamber from the other surface side of the single crystal silicon substrate by etching, and a step of forming a piezoelectric element facing the pressure chamber by a thin film forming technique and a photolithography technique. It is characterized by.
［実施例］ 第１図（ａ）乃至（ｄ）に、本発明の実施例における
片持ち梁を用いた液体噴射ヘッドの製造工程順の断面
図、同図（ｅ）にその平面図を示す。以下、この液体噴
射ヘッド及びその製造方法を製造工程に従って説明す
る。同図（ａ）はノズル形成工程終了時の断面図であ
り、101は単結晶珪素基板、102は単結晶珪素基板101上
に形成した金属層、103はノズルである。単結晶珪素基
板101上に金属層102を５〜50μｍ程度形成し、更にこれ
を貫通するノズル103をRIBE（Reactive Ion Beam Et
ching）法、スパッタエッチング法等で形成すると、か
くのごとき断面図となる。金属層102は、Au、Pt、Cr、N
i等の材料をスパッタ法、蒸着法、電着法等で形成し用
いれば良い。同図（ｂ）は圧力室形成工程終了時の断面
図であり、104は単結晶珪素基板101をエッチングして形
成される圧力室である。ノズル103を形成した側に対し
反対側の表面にフォトレジスタ等でパターン形成し、エ
ッチングを行う。このエッチングは湿式法で、エチレン
ジアミン、ピロカテコール、水の混合液を用いれば良
い。このエッチング液を用いると、金属層102のエッチ
ングレートは単結晶珪素基板101のそれに比べ格段に小
さいため、金属層102やノズル103はほとんどエッチング
されずに残り、かくのごとき断面図となる。前記のごと
く、金属層102にAu、Pt、Cr、Ni等の材料を用いた場合
は、単結晶珪素基板101のエッチングをKOH水溶液等で行
っても良く、またドライエッチング法で行っても良い。
また特に、金属層102にAu、Pt等の貴金属を用いた場
合、単結晶珪素基板101のエッチングは任意の方法で良
い。同図（ｃ）は片持ち梁形成工程終了時の断面図であ
り、105は圧力室104上に張った片持ち梁である。この片
持ち梁105は、薄板ガラス、金属板、SrTiO3等の材料を
熱圧着等の方法で貼り付け、形成してかくのごとき構造
となる。同図（ｄ）は圧電素子形成工程終了時の断面図
であり、106は下電極、107は圧電膜、108は上電極であ
る。106乃至108により、圧電素子が形成される。電極10
6及び108にはPt、Ni、Al等の金属材料、圧電膜107にはP
ZT、PbTiO3、ZnO等の圧電材料を用いれば良い。片持ち
梁105にSrTiO3を用いる場合は、下電極106にPt、圧電膜
107にペロブスカイト構造を持つPZTやPbTiO3をそれぞれ
スパッタ法で形成すれば、圧電素子を形成する106、107
をエピタキシャル成長させる事が可能であり、製造強度
や圧電性の優れた圧電膜107を形成する事ができる。Embodiment FIGS. 1A to 1D are cross-sectional views of a liquid ejecting head using a cantilever according to an embodiment of the present invention in the order of manufacturing steps, and FIG. 1E is a plan view thereof. . Hereinafter, the liquid jet head and the method of manufacturing the liquid jet head will be described according to the manufacturing process. FIG. 3A is a cross-sectional view at the end of the nozzle forming step, where 101 is a single-crystal silicon substrate, 102 is a metal layer formed on the single-crystal silicon substrate 101, and 103 is a nozzle. A metal layer 102 is formed on a single-crystal silicon substrate 101 to a thickness of about 5 to 50 μm, and a nozzle 103 penetrating the metal layer 102 is formed by a reactive ion beam etching (RIBE).
ching) method, a sputter etching method, or the like, becomes a cross-sectional view as described above. The metal layer 102 is made of Au, Pt, Cr, N
A material such as i may be formed by sputtering, vapor deposition, electrodeposition, or the like. FIG. 2B is a cross-sectional view at the end of the pressure chamber forming step. Reference numeral 104 denotes a pressure chamber formed by etching the single crystal silicon substrate 101. A pattern is formed on the surface opposite to the side on which the nozzle 103 is formed by using a photoresistor or the like, and etching is performed. This etching may be performed by a wet method using a mixed solution of ethylenediamine, pyrocatechol and water. When this etching solution is used, the etching rate of the metal layer 102 is much lower than that of the single crystal silicon substrate 101, so that the metal layer 102 and the nozzle 103 remain almost without being etched, and a cross-sectional view as shown above is obtained. As described above, when a material such as Au, Pt, Cr, or Ni is used for the metal layer 102, the single-crystal silicon substrate 101 may be etched with a KOH aqueous solution or the like, or may be dry-etched. .
In particular, when a noble metal such as Au or Pt is used for the metal layer 102, the single crystal silicon substrate 101 may be etched by any method. FIG. 3C is a cross-sectional view at the end of the cantilever forming step, and 105 is a cantilever stretched over the pressure chamber 104. The cantilever 105 has such a structure that a material such as a thin glass plate, a metal plate, and SrTiO 3 is attached and formed by a method such as thermocompression bonding. FIG. 4D is a cross-sectional view at the time of completion of the piezoelectric element forming step, wherein 106 is a lower electrode, 107 is a piezoelectric film, and 108 is an upper electrode. A piezoelectric element is formed by 106 to 108. Electrode 10
6 and 108 are metal materials such as Pt, Ni and Al, and the piezoelectric film 107 is P
A piezoelectric material such as ZT, PbTiO 3 or ZnO may be used. When SrTiO 3 is used for the cantilever 105, Pt is used for the lower electrode 106, and the piezoelectric film is used.
If PZT or PbTiO 3 having a perovskite structure is formed on each 107 by a sputtering method, a piezoelectric element is formed.
Can be epitaxially grown, and a piezoelectric film 107 having excellent manufacturing strength and piezoelectricity can be formed.
以上のごとく形成した液体噴射ヘッドの動作の一例を
示すと、以下のごとくなる。圧電素子を取り巻く空間及
び圧力室104及びノズル103には液体が満たされているも
のとする。圧電素子の上下電極108、106間に電圧を印加
すると、圧電素子及び片持ち梁105が歪む。すると圧力
室104中の液体に圧力が印加され、液体はノズル103より
外側へ噴射される。次に圧電素子の上下電極108、106間
の電圧印加をやめると、圧電素子の歪は元に戻り、圧力
室104中の液体は減圧され、圧電素子を取り巻く空間か
ら液体が補充される。An example of the operation of the liquid ejecting head formed as described above is as follows. It is assumed that the space surrounding the piezoelectric element, the pressure chamber 104, and the nozzle 103 are filled with liquid. When a voltage is applied between the upper and lower electrodes 108 and 106 of the piezoelectric element, the piezoelectric element and the cantilever 105 are distorted. Then, pressure is applied to the liquid in the pressure chamber 104, and the liquid is ejected from the nozzle 103 to the outside. Next, when the application of the voltage between the upper and lower electrodes 108 and 106 of the piezoelectric element is stopped, the distortion of the piezoelectric element returns to its original state, the pressure in the pressure chamber 104 is reduced, and the liquid is replenished from the space surrounding the piezoelectric element.
この液体噴射ヘッドの平面図の一例を同図（ｅ）に示
す。ノズル103及び圧力室104をフォトリソグラフィー技
術を用いて連続形成し、また片持ち梁形成後の工程も同
様に連続形成できるため、101乃至108で構成される要素
は、精度良くかつ微細に形成できる。このため、液体噴
射を行うノズルの高密度化や、ノズルをライン状に長尺
に形成するマルチノズル化が容易となった。また、圧力
室104を形成する際、単結晶珪素基板101のエッチングは
金属層102により自動的にストップする。このため、圧
力室104の深さは均一であり再現性も良いものとなり、
この結果、本発明の液体噴射ヘッドの液体噴射特性も良
好で再現性の良いものとなる。An example of a plan view of the liquid jet head is shown in FIG. The nozzle 103 and the pressure chamber 104 are continuously formed by using the photolithography technique, and the process after the cantilever formation can be similarly continuously formed. Therefore, the elements 101 to 108 can be formed precisely and finely. . For this reason, it has become easy to increase the density of nozzles for performing liquid ejection and to form multi-nozzles in which nozzles are formed in a long line. Further, when forming the pressure chamber 104, the etching of the single crystal silicon substrate 101 is automatically stopped by the metal layer 102. For this reason, the depth of the pressure chamber 104 is uniform and the reproducibility is good,
As a result, the liquid ejecting head of the present invention also has good liquid ejecting characteristics and good reproducibility.
第２図（ａ）乃至（ｃ）に、本発明の実施例におけ
る、圧力室上に張る片持ち梁がｐ型単結晶珪素により形
成される液体噴射ヘッドの製造工程順の断面図を示す。
第１図と同一の記号は第１図と同一のものを表す。以
下、製造工程の一例に従って本液体噴射ヘッド及びその
製造方法を説明する。同図（ａ）は、ノズルと反対側の
単結晶珪素基板表面にｐ型単結晶珪素層形成工程終了時
の断面図である。前述の方法により第１図（ａ）に示す
ごとくノズル103を形成した後、反対側の単結晶珪素板
表面にｐ型の導電型を有する珪素層201をエピタキシャ
ル成長させ、第２図（ａ）のごとき断面図となる。同図
（ｂ）は圧力室及び圧力室上の片持ち梁を形成する工程
終了時の断面図である。この加工方法の一例を示すと、
まずノズル103側に対し反対側の基板表面（ｐ型の導電
型を有する珪素層201の表面）にフォトレジスト等でパ
ターン形成し、奥山雅則ら（材料別冊第38巻第425号pp.
89〜99）に示されるごとく、前記のエチレンジアミン、
ピロカテコール、水の混合液により選択エッチングし、
圧力室104及び片持ち梁を形成すれば良い。また、前記
のごとく金属層102にAu、Pt、Cr、Ni等の材料を用いた
場合は、単結晶珪素基板101のエッチングをKOH水溶液等
で行っても良い。同図（ｃ）は圧電素子形成工程終了時
の断面図である。これはｐ型単結晶珪素層201で形成さ
れる片持ち梁を圧電素子の下電極に用いている例であ
る。このうえに圧電膜107、上電極108を形成すればかく
のごとき断面図となる。もちろん、片持ち梁補強用や相
互拡散防止用等の目的で、ｐ型珪素層201と圧電膜107間
に金属膜をはさむ構造にしても良い。2 (a) to 2 (c) are cross-sectional views of a liquid ejecting head in which a cantilever beam extending over a pressure chamber is formed of p-type single crystal silicon in the order of the manufacturing process in the embodiment of the present invention.
The same symbols as those in FIG. 1 indicate the same as those in FIG. Hereinafter, the liquid ejecting head and a method of manufacturing the same according to an example of a manufacturing process will be described. FIG. 2A is a cross-sectional view at the time when the p-type single-crystal silicon layer forming step is completed on the surface of the single-crystal silicon substrate opposite to the nozzle. After the nozzle 103 is formed as shown in FIG. 1A by the above-described method, a silicon layer 201 having a p-type conductivity is epitaxially grown on the surface of the single-crystal silicon plate on the opposite side. This is a cross-sectional view. FIG. 2B is a cross-sectional view at the end of the step of forming the pressure chamber and the cantilever on the pressure chamber. As an example of this processing method,
First, a pattern is formed on the substrate surface opposite to the nozzle 103 side (the surface of the silicon layer 201 having a p-type conductivity) with a photoresist or the like, and Masanori Okuyama et al. (Materials Supplement Volume 38 No. 425 pp.
89-99), the ethylenediamine,
Selective etching with a mixture of pyrocatechol and water,
What is necessary is just to form the pressure chamber 104 and the cantilever. When a material such as Au, Pt, Cr, or Ni is used for the metal layer 102 as described above, the single crystal silicon substrate 101 may be etched with a KOH aqueous solution or the like. FIG. 3C is a cross-sectional view at the time of completion of the piezoelectric element forming step. This is an example in which a cantilever formed of a p-type single crystal silicon layer 201 is used as a lower electrode of a piezoelectric element. If a piezoelectric film 107 and an upper electrode 108 are formed thereon, a cross-sectional view as described above can be obtained. Of course, a metal film may be sandwiched between the p-type silicon layer 201 and the piezoelectric film 107 for the purpose of reinforcing the cantilever or preventing mutual diffusion.
この液体噴射ヘッドは、その全製造工程を完全に薄膜
形成技術とフォトリソグラフィー技術を用いて連続形成
できるため、第１図に示す実施例に比べ、更に精度良く
かつ微細に形成できる。このため、液体噴射を行うノズ
ルの高密度化や、ノズルをライン状に長尺に形成するマ
ルチノズル化が容易となり、10dot/mmの解像度で5cmの
長さを持つライン液体噴射ヘッドが形成できた。また、
本発明の構成をとることにより100dot/mm程度までの高
解像度化も可能である。更に、この液体噴射ヘッドは、
前述のごとくその全製造工程を完全に薄膜形成技術とフ
ォトリソグラフィー技術を用いて連続形成できるため、
その組立に要する工程が大いに軽減され、このため安価
なものとなる。また、第１図に示す実施例と同様に、圧
力室104を形成する際、単結晶珪素基板101のエッチング
は金属層102により自動的にストップする。このため、
圧力室104の深さは均一であり再現性も良いものとな
り、この結果、本発明の液体噴射ヘッドの液体噴射特性
も良好で再現性の良いものとなる。This liquid jet head can be formed completely continuously using the thin film forming technology and the photolithography technology in its entire manufacturing process, so that it can be formed more precisely and finely than the embodiment shown in FIG. For this reason, it is easy to increase the density of nozzles that perform liquid ejection and to form multi-nozzles that form long nozzles in a line shape, and it is possible to form a line liquid ejection head with a resolution of 10 dots / mm and a length of 5 cm. Was. Also,
By adopting the configuration of the present invention, it is possible to increase the resolution up to about 100 dots / mm. Furthermore, this liquid jet head is
As mentioned above, the entire manufacturing process can be completely formed continuously using thin film formation technology and photolithography technology.
The steps required for the assembly are greatly reduced, and are therefore inexpensive. Further, similarly to the embodiment shown in FIG. 1, when forming the pressure chamber 104, the etching of the single crystal silicon substrate 101 is automatically stopped by the metal layer 102. For this reason,
The depth of the pressure chamber 104 is uniform and the reproducibility is good. As a result, the liquid ejection characteristics of the liquid ejection head of the present invention are good and the reproducibility is good.
また、この実施例の液体噴射ヘッドの製造方法におい
ては、最初にｐ型の導電型を有する珪素層201をエピタ
キシャル成長させておく事も可能であり、またもちろ
ん、ｐ型珪素層201をエピタキシャル成長済みの単結晶
珪素基板を用いることも可能である。その後、金属層10
2及びノズル103を形成し第２図（ａ）に示すごとき断面
図とし、以下の工程は前述のごとく同図（ｂ）、（ｃ）
に示すごとく進めれば良い。かくのごとき製造方法とす
る事により、ｐ型珪素層201をエピタキシャル成長させ
る時における珪素分子のノズル103への回り込みを防ぐ
事ができる。Further, in the method of manufacturing the liquid jet head of this embodiment, it is possible to first epitaxially grow the silicon layer 201 having the p-type conductivity, and of course, the epitaxial growth of the p-type silicon layer 201 is completed. It is also possible to use a single crystal silicon substrate. Then the metal layer 10
2 and the nozzle 103 are formed to form a sectional view as shown in FIG. 2A, and the following steps are performed as described above in FIGS.
You can proceed as shown in. With the manufacturing method as described above, it is possible to prevent silicon molecules from flowing into the nozzle 103 when the p-type silicon layer 201 is epitaxially grown.
第３図に、本発明の実施例における、圧力室上に両端
支持梁を張った液体噴射ヘッドの断面図を示す。同図に
おいて、第１図、第２図と同一の記号はそれぞれ第１
図、第２図と同一のものを表す。本実施例のごとき構造
の液体噴射ヘッドは、前述の製造方法いずれを用いても
容易に形成できる。両端支持梁の構造は自由端を有する
片持ち梁に比べて強固であり、またその固有振動数も大
きいため圧力室104中の液体に印加される圧力が大き
い。よって本実施例の液体噴射ヘッドは構造的に強固で
あり、またその液体噴射特性も良い。圧力室上に張る梁
は以上の実施例に限定される事なく、例えば周辺を固定
した梁等を用いて液体噴射ヘッドを形成しても良い。FIG. 3 is a cross-sectional view of a liquid jet head in which a support beam is provided at both ends on a pressure chamber in the embodiment of the present invention. In the same figure, the same symbols as those in FIGS.
2 and FIG. The liquid jet head having the structure as in the present embodiment can be easily formed by using any of the above-described manufacturing methods. The structure of the support beams at both ends is stronger than a cantilever beam having a free end, and has a large natural frequency, so that the pressure applied to the liquid in the pressure chamber 104 is large. Therefore, the liquid jet head of this embodiment is structurally strong and has good liquid jet characteristics. The beam extending over the pressure chamber is not limited to the above embodiment. For example, a beam having a fixed periphery may be used to form the liquid ejecting head.
第４図（ａ）乃至（ｃ）に、本発明の実施例におけ
る、一表面にｐ型の導電型を有する単結晶珪素層を持つ
単結晶珪素基板を貫通する空洞を形成する工程を用いて
形成した液体噴射ヘッドの、製造工程順の断面図を示
す。同図において、第１図及び第２図と同一の記号はそ
れぞれ第１図及び第２図と同一のものを表す。以下、製
造工程の一例に従って本実施例を説明する。第４図
（ａ）は金属層形成工程終了時の断面図であり、401は
単結晶珪素基板を貫通する空洞、402は単結晶珪素基板1
01上に形成した電極である。まず、ｐ型珪素層201を有
する単結晶珪素基板101を貫通する空洞401を、RIBE法等
により形成する。そして、ｐ型珪素層201に対し反対側
の基板表面に電極402を形成する。この電極402は、金属
層102をめっき法で形成するためのものであり、例え
ば、ITO（Indium Tin Oxide）をスパッタ法で形成し
て電極402とし、更にAu、Pt、Ni、Cr等の金属をめっき
法で形成して同図（ａ）のごとき断面図となる。この時
点でノズル103は自動的に形成されている。そしてこれ
を前述のごとく、エチレンジアミンとピロカテコールの
水溶液、KOH水溶液等でエッチングし、片持ち梁及び圧
力室104を形成し、同図（ｂ）のごとき断面図となる。
この時、ノズル103の直上に単結晶珪素基板を貫通する
空洞が形成されているため、ノズル103と圧力室104、ｐ
型珪素層201で形成される片持ち梁の位置合わせが容易
である。更に、圧電膜107、上電極108と形成し、同図
（ｃ）のごとき断面図となる。本実施例においては、最
初に単結晶珪素基板に該基板を貫通する空洞401を形成
しているが、もちろん、単結晶珪素基板上に電極402、
金属層102と形成した後に、ノズル103及び単結晶珪素基
板を貫通する空洞401を形成するようにしても良い。FIGS. 4 (a) to 4 (c) show a step of forming a cavity penetrating a single crystal silicon substrate having a single crystal silicon layer having a p-type conductivity type on one surface in an embodiment of the present invention. The sectional view of the formed liquid jet head in the order of the manufacturing process is shown. 2, the same symbols as those in FIGS. 1 and 2 denote the same components as in FIGS. 1 and 2, respectively. Hereinafter, the present embodiment will be described according to an example of a manufacturing process. FIG. 4 (a) is a cross-sectional view at the end of the metal layer forming step, where 401 is a cavity penetrating the single crystal silicon substrate, and 402 is a single crystal silicon substrate 1
This is the electrode formed on 01. First, a cavity 401 penetrating through a single crystal silicon substrate 101 having a p-type silicon layer 201 is formed by a RIBE method or the like. Then, an electrode 402 is formed on the substrate surface opposite to the p-type silicon layer 201. The electrode 402 is for forming the metal layer 102 by a plating method. For example, ITO (Indium Tin Oxide) is formed by a sputtering method to form an electrode 402, and further, a metal such as Au, Pt, Ni, Cr, etc. Is formed by a plating method to form a sectional view as shown in FIG. At this point, the nozzle 103 has been automatically formed. Then, as described above, this is etched with an aqueous solution of ethylenediamine and pyrocatechol, an aqueous KOH solution, etc. to form a cantilever and a pressure chamber 104, and a sectional view as shown in FIG.
At this time, since a cavity penetrating the single crystal silicon substrate is formed immediately above the nozzle 103, the nozzle 103 and the pressure chamber 104, p
The alignment of the cantilever formed by the mold silicon layer 201 is easy. Further, a piezoelectric film 107 and an upper electrode 108 are formed, and a sectional view as shown in FIG. In this embodiment, first, the cavity 401 penetrating the single crystal silicon substrate is formed in the single crystal silicon substrate.
After the formation with the metal layer 102, a cavity 401 penetrating the nozzle 103 and the single crystal silicon substrate may be formed.
以上述べてきた液体噴射ヘッドは、平面方向のパター
ン精度のみならず、垂直方向の寸法精度も良い。液体噴
射特性を大きく支配する圧力室104の深さのみならず、
ｐ型珪素層201や圧電膜107の厚み等を、薄膜形成技術や
フォトリソグラフィー技術により容易に制御できる。こ
のため、本発明の液体噴射ヘッドは液体噴射特性が良
く、マルチノズル化してもその均一性が良い。The liquid ejecting head described above has good dimensional accuracy in the vertical direction as well as pattern accuracy in the planar direction. Not only the depth of the pressure chamber 104 that largely governs the liquid ejection characteristics,
The thickness and the like of the p-type silicon layer 201 and the piezoelectric film 107 can be easily controlled by a thin film forming technique and a photolithography technique. For this reason, the liquid ejecting head of the present invention has good liquid ejecting characteristics, and has good uniformity even when a multi-nozzle is used.
なお、本発明の液体噴射ヘッド及びその製造方法は以
上述べた実施例のみならず、本発明の主旨を逸脱しない
範囲において広く適用が可能である。また、この液体噴
射ヘッドは、インクジェットプリンタのみならず、他の
印字、印刷装置（例えばコピー機等）や、塗装装置、捺
染装置等に広く適用される。The liquid jet head and the method of manufacturing the same according to the present invention can be widely applied not only to the above-described embodiments but also to a range that does not depart from the gist of the present invention. The liquid ejecting head is widely applied not only to an ink jet printer but also to other printing and printing devices (for example, a copying machine), a coating device, a textile printing device, and the like.
［発明の効果］ 以上述べた如く、本発明の液体噴射ヘッドによれば、
エッチングにより圧力室となる凹部が形成された単結晶
珪素基板と、該単結晶珪素基板上にスパッタ法、蒸着
法、電着法等の薄膜形成技術により形成された層と、該
層の前記圧力室と対向する位置に形成されたノズルと、
前記圧力室と対向する位置に薄膜形成技術及びフォトリ
ソグラフィー技術により形成された圧電素子とを備えた
ことにより、圧力室、ノズル及び圧電素子の位置精度が
きわめて良い液体噴射ヘッドを提供することが可能にな
る。また、別部材によりノズルプレートを接続する場合
に比べてノズルプレートと圧力室を形成する基板との位
置決め部が不要になるので、小型の液体噴射ヘッドが提
供できる。また、接合において接着剤を使用することが
ないので、接着剤の流路への流れ込みによる吐出特性へ
の悪影響の問題も生じることがない。さらに、上述の如
く精度良く容易に製造が可能であるので、ノズルの高密
度化、マルチノズル化を容易に実現することができる。[Effects of the Invention] As described above, according to the liquid ejecting head of the present invention,
A single-crystal silicon substrate in which a recess serving as a pressure chamber is formed by etching; a layer formed on the single-crystal silicon substrate by a thin film formation technique such as a sputtering method, an evaporation method, or an electrodeposition method; A nozzle formed at a position facing the chamber;
By providing a piezoelectric element formed by a thin film forming technique and a photolithography technique at a position facing the pressure chamber, it is possible to provide a liquid ejecting head with extremely high positional accuracy of the pressure chamber, the nozzle and the piezoelectric element. become. Further, compared with a case where the nozzle plate is connected by a separate member, a positioning portion for positioning the nozzle plate and the substrate forming the pressure chamber becomes unnecessary, so that a small-sized liquid jet head can be provided. Further, since no adhesive is used in the bonding, there is no problem that the adhesive flows into the flow path and adversely affects the ejection characteristics. Furthermore, as described above, it is possible to manufacture easily with high accuracy, so that it is possible to easily realize a high-density nozzle and a multi-nozzle.
また、本発明の液体噴射ヘッドの製造方法によれば、
単結晶珪素基板の一方の面上にスパッタ法、蒸着法、電
着法等の薄膜形成技術により層を形成する工程と、該層
にノズルとなる開口をエッチングにより形成する工程
と、前記ノズルに連通する圧力室となる凹部を前記単結
晶珪素基板の他方の面側からエッチングにより形成する
工程と、前記圧力室に対向する圧電素子を薄膜形成技術
及びフォトリソグラフィー技術により形成する工程とを
有することにより、ノズルプレートを張り合わせる従来
の方式と比較して煩雑な組立工程を不要にすることがで
きるので、液体噴射ヘッドを精度良く容易に製造するこ
とが可能になる。According to the method of manufacturing a liquid jet head of the present invention,
A step of forming a layer on one surface of a single crystal silicon substrate by a thin film formation technique such as a sputtering method, an evaporation method, or an electrodeposition method; a step of forming an opening serving as a nozzle in the layer by etching; A step of forming a recess serving as a communicating pressure chamber from the other surface side of the single crystal silicon substrate by etching, and a step of forming a piezoelectric element facing the pressure chamber by a thin film forming technique and a photolithography technique. This eliminates the need for a complicated assembly process as compared with the conventional method of laminating the nozzle plates, so that the liquid ejecting head can be manufactured accurately and easily.
第１図（ａ）乃至（ｄ）は、本発明の実施例における片
持ち梁を用いた液体噴射ヘッドの製造工程順の断面図、
同図（ｅ）はその平面図。 第２図（ａ）乃至（ｃ）は、本発明の実施例における、
圧力室上に張る片持ち梁がｐ型単結晶珪素により形成さ
れる液体噴射ヘッドの製造工程順の断面図。 第３図は、本発明の実施例における、圧力室上に両端支
持梁を張った液体噴射ヘッドの断面図。 第４図（ａ）乃至（ｃ）は、本発明の実施例における、
一表面にｐ型の導電型を有する単結晶珪素層を持つ単結
晶珪素基板を貫通する空洞を形成する工程を用いて形成
した液体噴射ヘッドの、製造工程順の断面図。 101……単結晶珪素基板 102……金属層 103……ノズル 104……圧力室 105……片持ち梁 106……下電極 107……圧電膜 108……上電極1 (a) to 1 (d) are cross-sectional views of a liquid ejecting head using a cantilever according to an embodiment of the present invention in the order of manufacturing steps,
FIG. 3E is a plan view thereof. 2 (a) to 2 (c) show an embodiment of the present invention.
Sectional drawing in the order of the manufacturing process of the liquid ejecting head in which the cantilever beam stretched over the pressure chamber is formed of p-type single crystal silicon. FIG. 3 is a cross-sectional view of a liquid jet head in which support beams are provided at both ends on a pressure chamber in the embodiment of the present invention. FIGS. 4 (a) to 4 (c) show an embodiment of the present invention.
Sectional drawing of the liquid-jet head formed using the process of forming the cavity which penetrates the single crystal silicon substrate which has the single crystal silicon layer which has p-type conductivity on one surface in order of a manufacturing process. 101 single crystal silicon substrate 102 metal layer 103 nozzle 104 pressure chamber 105 cantilever 106 lower electrode 107 piezoelectric film 108 upper electrode
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) B41J 2/045 B41J 2/055 B41J 2/16 Continuation of the front page (58) Field surveyed (Int.Cl. 7 , DB name) B41J 2/045 B41J 2/055 B41J 2/16
Claims (4)
された単結晶珪素基板と、該単結晶珪素基板上にスパッ
タ法、蒸着法、電着法等の薄膜形成技術により形成され
た層と、該層の前記圧力室と対向する位置に形成された
ノズルと、前記圧力室と対向する位置に薄膜形成技術及
びフォトリソグラフィー技術により形成された圧電素子
とを備えたことを特徴とする液体噴射ヘッド。A single-crystal silicon substrate in which a recess serving as a pressure chamber is formed by etching; a layer formed on the single-crystal silicon substrate by a thin film forming technique such as a sputtering method, an evaporation method, and an electrodeposition method; A liquid jet head comprising: a nozzle formed at a position of the layer facing the pressure chamber; and a piezoelectric element formed at a position facing the pressure chamber by a thin film forming technique and a photolithography technique. .
許請求の範囲第１項記載の液体噴射ヘッド。2. The liquid jet head according to claim 1, wherein said layer is a metal layer.
法、蒸着法、電着法等の薄膜形成技術により層を形成す
る工程と、該層にノズルとなる開口をエッチングにより
形成する工程と、前記ノズルに連通する圧力室となる凹
部を前記単結晶珪素基板の他方の面側からエッチングに
より形成する工程と、前記圧力室に対向する圧電素子を
薄膜形成技術及びフォトリソグラフィー技術により形成
する工程とを有することを特徴とする液体噴射ヘッドの
製造方法。3. A step of forming a layer on one surface of a single crystal silicon substrate by a thin film forming technique such as a sputtering method, an evaporation method, and an electrodeposition method, and a step of forming an opening serving as a nozzle in the layer by etching. Forming a recess serving as a pressure chamber communicating with the nozzle by etching from the other surface side of the single crystal silicon substrate, and forming a piezoelectric element facing the pressure chamber by a thin film formation technique and a photolithography technique. And a method for manufacturing a liquid jet head.
許請求の範囲第３項記載の液体噴射ヘッド。4. The liquid jet head according to claim 3, wherein said layer is a metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10803290A JP3089645B2 (en) | 1990-04-24 | 1990-04-24 | Liquid jet head and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10803290A JP3089645B2 (en) | 1990-04-24 | 1990-04-24 | Liquid jet head and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH045051A JPH045051A (en) | 1992-01-09 |
| JP3089645B2 true JP3089645B2 (en) | 2000-09-18 |
Family
ID=14474227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10803290A Expired - Lifetime JP3089645B2 (en) | 1990-04-24 | 1990-04-24 | Liquid jet head and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3089645B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5666141A (en) * | 1993-07-13 | 1997-09-09 | Sharp Kabushiki Kaisha | Ink jet head and a method of manufacturing thereof |
| JPH08169110A (en) * | 1994-12-20 | 1996-07-02 | Sharp Corp | Inkjet head |
| JP2001179996A (en) | 1999-12-22 | 2001-07-03 | Samsung Electro Mech Co Ltd | Ink jet printer head and method for manufacturing the head |
| JP3382196B2 (en) * | 2000-01-05 | 2003-03-04 | 株式会社東京機械製作所 | Web paper position adjustment device |
| CN104249560B (en) * | 2013-06-26 | 2016-08-10 | 珠海赛纳打印科技股份有限公司 | Liquid injection apparatus and manufacture method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2976479B2 (en) | 1990-04-17 | 1999-11-10 | セイコーエプソン株式会社 | Inkjet head |
-
1990
- 1990-04-24 JP JP10803290A patent/JP3089645B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2976479B2 (en) | 1990-04-17 | 1999-11-10 | セイコーエプソン株式会社 | Inkjet head |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH045051A (en) | 1992-01-09 |
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