JP2958829B2 - Contact image sensor - Google Patents
Contact image sensorInfo
- Publication number
- JP2958829B2 JP2958829B2 JP3252783A JP25278391A JP2958829B2 JP 2958829 B2 JP2958829 B2 JP 2958829B2 JP 3252783 A JP3252783 A JP 3252783A JP 25278391 A JP25278391 A JP 25278391A JP 2958829 B2 JP2958829 B2 JP 2958829B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving element
- substrate
- light receiving
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 54
- 239000010408 film Substances 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、多数の受光素子をライ
ン状に形成した絶縁基板上に、カラーフィルタ等が積層
された透光性基板を配置して成る複数枚のセンサ基板を
連結接続して構成される長尺密着型イメージセンサの最
端部の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for connecting and connecting a plurality of sensor substrates each having a light-transmitting substrate on which a color filter or the like is stacked on an insulating substrate on which a large number of light receiving elements are formed in a line. The present invention relates to a structure of an end portion of a long contact image sensor configured as described above.
【0002】[0002]
【従来の技術】従来、ファクシミリ等に使用される固体
撮像素子には、例えば、絶縁基板上に複数の個別電極,
光電変換層,共通電極を順次積層して受光素子アレイを
形成する薄膜構造とし、原稿等の画像情報を1対1に投
影して電気信号に変換する密着型イメージセンサが提案
されている。薄膜構造の受光素子アレイの幅は、金属膜
や半導体膜を着膜する着膜装置により制限されるので、
例えば日本工業規格A列0番の原稿を読み取り可能とす
るためには、受光素子アレイが形成された3枚のA3幅
のセンサ基板を連結接続するように配置し、A0幅の長
尺状受光素子アレイを得ている。2. Description of the Related Art Conventionally, a solid-state imaging device used for a facsimile or the like includes, for example, a plurality of individual electrodes on an insulating substrate.
There has been proposed a contact type image sensor that has a thin film structure in which a photoelectric conversion layer and a common electrode are sequentially laminated to form a light receiving element array, and projects image information of a document or the like one-to-one to convert it into an electric signal. Since the width of the light receiving element array having a thin film structure is limited by a film forming apparatus for forming a metal film or a semiconductor film,
For example, in order to be able to read the document of the A-column No. A in Japanese Industrial Standard, three A3-wide sensor boards on which a light-receiving element array is formed are arranged so as to be connected and connected, and a long light-receiving area of A0 width is used. An element array has been obtained.
【0003】近年、カラーの画像を読み取り可能なイメ
ージセンサの開発にともない、例えば図3に示すよう
に、多数の受光素子10が絶縁基板1上に一列に配列さ
れた受光素子アレイを形成し、赤色,緑色又は青色のフ
ィルタ21を透明基板2上に形成し、フィルタ21が各
受光素子10上に対応するように前記透明基板2を絶縁
基板1上に接着剤11を介して配置した構造のカラーイ
メージセンサが提案されている。受光素子10は、離散
的に形成された金属膜から成る個別電極,半導体膜から
なる光電変換層,透明導電膜から成る帯状の共通電極を
絶縁基板1上に順次積層して構成されている。In recent years, with the development of an image sensor capable of reading a color image, for example, as shown in FIG. 3, a light receiving element array in which a large number of light receiving elements 10 are arranged in a line on an insulating substrate 1 is formed. A structure in which a red, green or blue filter 21 is formed on a transparent substrate 2 and the transparent substrate 2 is arranged on an insulating substrate 1 via an adhesive 11 so that the filter 21 corresponds to each light receiving element 10. Color image sensors have been proposed. The light receiving element 10 is configured by sequentially laminating individual electrodes made of a discretely formed metal film, a photoelectric conversion layer made of a semiconductor film, and a strip-shaped common electrode made of a transparent conductive film on the insulating substrate 1.
【0004】[0004]
【発明が解決しようとする課題】長尺状カラーイメージ
センサを得る場合には、上記構造のカラーイメージセン
サの端部を接続側端部受光素子10aから所望の距離
(400dpiの場合、約10μm)の位置で切断し、
図3に示すように、接着剤30によりセンサ支持基板3
上で連結接続されるが、接続部で接着剤30のはみ出し
部31が生じ、接続部に入射した光が前記はみ出し部3
1で乱反射して接続部近傍での受光素子の出力値にバラ
ツキが生じるという問題点があった。また、長尺状カラ
ーイメージセンサを構成する個々のカラーイメージセン
サの端部は、接続側端部受光素子10aから約10μm
(400dpiの場合)の距離で切断されているので、
カラーイメージセンサを構成する両端のセンサ基板の外
側端部受光素子10bは、内側の受光素子10と比較し
て、図3に示すように原稿面側からの入射光A(画像情
報)が少なくなり(受光素子10bに対して右側方向か
らの原稿面反射光による入射光が少ない)、他の受光素
子10との均一性が確保できないという問題点があっ
た。更に、透明基板2の端部から入射した光Bがフレア
光となるので、各受光素子10に出力値のバラツキが生
じるという問題点があった。In order to obtain a long color image sensor, the end of the color image sensor having the above-described structure is set at a desired distance from the connection-side end light receiving element 10a (about 10 μm in the case of 400 dpi). Cut at the position
As shown in FIG.
Although the connection is made above, the protruding portion 31 of the adhesive 30 is generated at the connecting portion, and the light incident on the connecting portion is reflected by the protruding portion 3.
In this case, there is a problem that the light is diffusely reflected at 1 and the output value of the light receiving element near the connection portion varies. The end of each color image sensor constituting the long color image sensor is about 10 μm from the connection-side end light receiving element 10a.
(In the case of 400 dpi)
As shown in FIG. 3, incident light A (image information) from the document surface side of the outer end light receiving elements 10b of the sensor substrates at both ends constituting the color image sensor is smaller than that of the inner light receiving elements 10 as shown in FIG. (There is little incident light due to the document surface reflected light from the right side with respect to the light receiving element 10b), and there is a problem that uniformity with other light receiving elements 10 cannot be ensured. Furthermore, since the light B incident from the end of the transparent substrate 2 becomes flare light, there is a problem that the output value of each light receiving element 10 varies.
【0005】本発明は上記実情に鑑みてなされたもの
で、密着型イメージセンサのセンサ基板の端部受光素子
における光学的な不均一を改善し、センサ基板の内側の
受光素子との均一性を図るためのイメージセンサの最端
部の構造を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has improved optical nonuniformity in a light receiving element at an end of a sensor substrate of a contact type image sensor, and has improved uniformity with a light receiving element inside the sensor substrate. It is an object of the present invention to provide an endmost structure of an image sensor for planning.
【0006】[0006]
【課題を解決するための手段】上記従来例の問題点を解
決するため本発明の密着型イメージセンサは、多数の受
光素子を形成した絶縁基板上に、前記受光素子側にフィ
ルタを積層した透光性基板を配置してセンサ基板を形成
し、該センサ基板の外側端部を、前記受光素子の最端部
から一画素ピッチ以上外側に位置させる。また、受光素
子の外側最端部から一画素ピッチ以上外側のセンサ基板
上に、遮光膜を形成する。In order to solve the above-mentioned problems of the prior art, a contact type image sensor according to the present invention is a transparent image sensor in which a filter is laminated on the light receiving element side on an insulating substrate on which a large number of light receiving elements are formed. A sensor substrate is formed by arranging an optical substrate, and an outer end of the sensor substrate is positioned at least one pixel pitch from an outermost end of the light receiving element. Further, a light shielding film is formed on the sensor substrate at least one pixel pitch from the outermost end of the light receiving element.
【0008】[0008]
【作用】本発明によれば、密着型イメージセンサの外側
端部は、センサ基板に形成された受光素子の最端部から
一画素ピッチ以上外側に位置させるとともに、遮光膜を
形成したので、センサ基板の端部受光素子へのフレア光
の入射を防ぎ、前記端部受光素子と基板内部に位置する
受光素子とにおいて、光学的に均等な構造を得ることが
できる。According to the present invention, the outer end of the contact type image sensor is located at least one pixel pitch from the outermost end of the light receiving element formed on the sensor substrate and the light shielding film is formed. The flare light is prevented from being incident on the edge light receiving element of the substrate, and an optically uniform structure can be obtained between the edge light receiving element and the light receiving element located inside the substrate.
【0009】[0009]
【実施例】本発明の一実施例について図1を参照しなが
ら説明する。カラーイメージセンサは、離散的に形成さ
れた個別電極,光電変換層,共通電極を積層して構成さ
れる受光素子10をガラスから成る絶縁基板1上に形成
したセンサ基板と、赤色,緑色又は青色のフィルタ21
が形成された透明基板2とを、各フィルタ21が各受光
素子10上に対応するように接着剤30を介在させて配
置して構成されている。従来例を示す図3と構成が同一
の部分は同一符号を付している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIG. The color image sensor includes a sensor substrate in which a light receiving element 10 formed by stacking discrete electrodes, photoelectric conversion layers, and common electrodes formed discretely on an insulating substrate 1 made of glass; Filter 21
Is formed on the transparent substrate 2 with the adhesive 30 interposed therebetween so that each filter 21 corresponds to each light receiving element 10. Portions having the same configuration as FIG. 3 showing the conventional example are denoted by the same reference numerals.
【0010】長尺状カラーイメージセンサを得る場合、
センサ基板の両端部をダイシングブレード(切断刃)
(図示せず)により切断して複数のセンサ基板を連結接
続して形成する。センサ基板の切断に際しては、連結接
続側においては端部受光素子10aから約10μm(4
00dpiの場合)の距離だけ離れた位置で切断し、長
尺イメージセンサの両端に対応するセンサ基板の外側端
については、このセンサ基板端部に形成された受光素子
10bの最端部から一画素ピッチt以上外側で切断す
る。長尺状カラーイメージセンサを構成する各カラーイ
メージセンサは、接着剤30(例えば日本ロックタイト
社製のアクリル系接着剤、トウホウ化成社製のエポキシ
系接着剤)を介してセンサ支持基板3上に塗布された接
着剤3上で連結接続するとともに、透明基板2上にも同
じ接着剤30が塗布され、連結接続された複数のカラー
イメージセンサ全体を覆うように長尺の透明部材4を配
置している。この透明部材4は、透明基板2と同様のガ
ラス板又は透明基板2と屈折率が同じ透明の有機膜で形
成されている。When obtaining a long color image sensor,
Dicing blades (cutting blades) at both ends of the sensor substrate
A plurality of sensor substrates are connected and connected by cutting (not shown). At the time of cutting the sensor substrate, about 10 μm (4
00 dpi), the outer edge of the sensor substrate corresponding to both ends of the long image sensor is one pixel from the extreme end of the light receiving element 10b formed at the edge of the sensor substrate. Cut outside the pitch t or more. Each color image sensor constituting the long color image sensor is applied onto the sensor support substrate 3 via an adhesive 30 (for example, an acrylic adhesive manufactured by Nippon Loctite, an epoxy adhesive manufactured by Toho Kasei Co., Ltd.). The same adhesive 30 is applied on the transparent substrate 2 while connecting and connecting on the connected adhesive 3, and the long transparent member 4 is arranged so as to cover the whole of the plurality of connected and connected color image sensors. I have. The transparent member 4 is formed of a glass plate similar to the transparent substrate 2 or a transparent organic film having the same refractive index as the transparent substrate 2.
【0011】透明部材4の両端部には、最端部受光素子
10bより一画素t以上外側の上面に、遮光樹脂膜40
(例えばCKー2000 富士ハント製のカラーモザイ
ク等)が塗布されている。更に、絶縁基板1,透明基板
2及び透明部材4の両端側面にも、同様の遮光樹脂膜4
1が塗布されている。At both ends of the transparent member 4, a light-shielding resin film 40 is formed on the upper surface one pixel t or more outside the endmost light receiving element 10b.
(For example, a color mosaic manufactured by CK-2000 Fuji Hunt). Further, a similar light-shielding resin film 4 is formed on both side surfaces of the insulating substrate 1, the transparent substrate 2 and the transparent member 4.
1 is applied.
【0012】上記構造によれば、長尺状カラーイメージ
センサの最端部受光素子10bについては、図1に示す
ように、原稿面側から入射する光Aの範囲がセンサ基板
内部に位置する受光素子10と同じにすることができ、
他の受光素子10に対して光学的に均等な構造とするこ
とができるまた、透明部材4を配置したことにより、連
結接続部分での接着剤30を平坦化させ、接続部近傍で
入射した光の乱反射による受光素子の出力値のバラツキ
を防止でき、原稿画像に忠実な画像信号を得ることがで
きる。更に、遮光樹脂膜40,41の塗布により、カラ
ーイメージセンサの端部から透明基板2や透明部材4へ
の光の入射を防ぎ、この光が全反射によりセンサ基板の
内側に入り込むことによって生じるフレアを防止するこ
とができる。According to the above structure, as shown in FIG. 1, the light receiving element 10b of the longest color image sensor has a range of light A incident from the document surface side located within the sensor substrate. Can be the same as element 10;
The structure can be made optically uniform with respect to the other light receiving elements 10. Further, by disposing the transparent member 4, the adhesive 30 at the connection connection portion is flattened, and the light incident near the connection portion is reduced. The variation in the output value of the light receiving element due to the irregular reflection of light can be prevented, and an image signal faithful to the original image can be obtained. Further, the application of the light-shielding resin films 40 and 41 prevents light from entering the transparent substrate 2 and the transparent member 4 from the end of the color image sensor, and the flare caused by this light entering the inside of the sensor substrate by total reflection. Can be prevented.
【0013】図2は本発明の他の実施例を示すもので、
透明基板2上に配置する透明部材4が長尺カラーイメー
ジセンサ幅より長くした例である。本実施例では、長尺
状カラーイメージセンサの最端部受光素子10bより一
画素t以上外側の上面に、遮光樹脂膜40、透明部材4
の両端側面に遮光樹脂膜41a、絶縁基板1及び透明基
板2の両端側面に遮光樹脂膜41bをそれぞれ塗布して
いる。他の構成は図1と同様であるので同一構成部分に
ついては同一符号を付して説明を省略する。FIG. 2 shows another embodiment of the present invention.
This is an example in which the transparent member 4 arranged on the transparent substrate 2 is longer than the width of the long color image sensor. In this embodiment, the light-shielding resin film 40 and the transparent member 4 are provided on the upper surface of the long color image sensor at least one pixel t outside the endmost light receiving element 10b.
And a light-shielding resin film 41b is applied to both end surfaces of the insulating substrate 1 and the transparent substrate 2, respectively. Other configurations are the same as those in FIG. 1, and the same components are denoted by the same reference numerals and description thereof will be omitted.
【0014】[0014]
【発明の効果】本発明によれば、密着型イメージセンサ
のセンサ基板の外側端部は、該センサ基板端部に形成さ
れた受光素子の最端部から一画素ピッチ以上外側に位置
させたので、前記端部受光素子と基板内部に位置する受
光素子とにおいて、光学的に均等な構造を得ることがで
き、出力値のバラツキを防止して原稿画像に忠実な画像
信号を得ることができる。また、遮光膜を形成したこと
のより、センサ基板の端部受光素子へのフレア光の入射
を防ぐことができ、受光素子の出力値のバラツキを防い
で原稿画像に忠実な画像信号を得ることができる。According to the present invention, the outer end of the sensor substrate of the contact type image sensor is located at least one pixel pitch outward from the end of the light receiving element formed at the end of the sensor substrate. An optically uniform structure can be obtained between the end light receiving element and the light receiving element located inside the substrate, and a variation in output value can be prevented, and an image signal faithful to a document image can be obtained. In addition, since the light-shielding film is formed, it is possible to prevent flare light from being incident on the light receiving element at the end of the sensor substrate, thereby preventing variation in the output value of the light receiving element and obtaining an image signal that is faithful to the original image. Can be.
【図1】 本発明の一実施例を示す長尺カラーイメージ
センサの一部断面説明図である。FIG. 1 is a partially sectional explanatory view of a long color image sensor showing one embodiment of the present invention.
【図2】 本発明の他の実施例を示す長尺カラーイメー
ジセンサの一部断面説明図である。FIG. 2 is a partially sectional explanatory view of a long color image sensor showing another embodiment of the present invention.
【図3】 従来のカラーイメージセンサの連結接続状態
を示す断面説明図である。FIG. 3 is an explanatory cross-sectional view showing a connected state of a conventional color image sensor.
1…絶縁基板、 2…透明基板、 3…センサ支持基
板、 4…透明部材、10…受光素子、 21…フィル
タ、 30…接着剤、 40,41…遮光樹脂膜、t…
画素ピッチDESCRIPTION OF SYMBOLS 1 ... Insulating substrate, 2 ... Transparent substrate, 3 ... Sensor support substrate, 4 ... Transparent member, 10 ... Light receiving element, 21 ... Filter, 30 ... Adhesive, 40, 41 ... Light shielding resin film, t ...
Pixel pitch
フロントページの続き (72)発明者 野田 聡 神奈川県海老名市本郷2274番地 富士ゼ ロックス株式会社海老名事業所内 (58)調査した分野(Int.Cl.6,DB名) H04N 1/028 Continuation of the front page (72) Inventor Satoshi Noda 2274 Hongo, Ebina-shi, Kanagawa Prefecture Fuji Xerox Co., Ltd. Ebina Works (58) Field surveyed (Int.Cl. 6 , DB name) H04N 1/028
Claims (1)
に、前記受光素子側にフィルタを積層した透光性基板を
配置してセンサ基板を形成し、該センサ基板の外側端部
を、前記受光素子の最端部から一画素ピッチ以上外側に
位置させるとともに、受光素子の外側最端部から一画素
ピッチ以上外側のセンサ基板上に、遮光膜を形成するこ
とを特徴とする密着型イメージセンサ。A sensor substrate is formed by arranging a light-transmitting substrate on which a filter is laminated on the light-receiving element side on an insulating substrate on which a large number of light-receiving elements are formed, and forming an outer end of the sensor substrate on the insulating substrate. A contact-type image sensor, wherein a light-shielding film is formed on the sensor substrate at least one pixel pitch from the outermost end of the light-receiving element and at least one pixel pitch from the outermost end of the light-receiving element. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3252783A JP2958829B2 (en) | 1991-09-05 | 1991-09-05 | Contact image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3252783A JP2958829B2 (en) | 1991-09-05 | 1991-09-05 | Contact image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0568134A JPH0568134A (en) | 1993-03-19 |
JP2958829B2 true JP2958829B2 (en) | 1999-10-06 |
Family
ID=17242212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3252783A Expired - Fee Related JP2958829B2 (en) | 1991-09-05 | 1991-09-05 | Contact image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2958829B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3475037B2 (en) | 1997-03-14 | 2003-12-08 | 株式会社東芝 | transceiver |
JP6296902B2 (en) * | 2014-05-29 | 2018-03-20 | 株式会社沖データ | Semiconductor device, image forming apparatus using the semiconductor device, and image reading apparatus |
-
1991
- 1991-09-05 JP JP3252783A patent/JP2958829B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0568134A (en) | 1993-03-19 |
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