JP2715667B2 - Apparatus for producing oxide superconducting thin film and method for producing oxide superconducting single crystal thin film - Google Patents
Apparatus for producing oxide superconducting thin film and method for producing oxide superconducting single crystal thin filmInfo
- Publication number
- JP2715667B2 JP2715667B2 JP2412926A JP41292690A JP2715667B2 JP 2715667 B2 JP2715667 B2 JP 2715667B2 JP 2412926 A JP2412926 A JP 2412926A JP 41292690 A JP41292690 A JP 41292690A JP 2715667 B2 JP2715667 B2 JP 2715667B2
- Authority
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- Japan
- Prior art keywords
- thin film
- substrate
- axis
- oxide superconducting
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 58
- 239000013078 crystal Substances 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 44
- 239000002887 superconductor Substances 0.000 claims description 25
- 229910002367 SrTiO Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は高い臨界温度を有するＹ
系酸化物を主体とする超電導薄膜の製造装置およびその
製造方法に関するものである。BACKGROUND OF THE INVENTION The present invention relates to a Y material having a high critical temperature.
The present invention relates to an apparatus and a method for manufacturing a superconducting thin film mainly composed of a system oxide.
【０００２】[0002]
【従来の技術】近年、高い臨界温度（Ｔｃ）を有する酸
化物超電導材料として、４０ＫのＴｃを持つＬａ系の材
料が発見されたのに引き続いて、フィジカル・レビュ−
・レタ−ズ（ Phys. Rev. Lett. ）５８巻，９０８頁に
開示されているように、 M. K.Wu らによって発見され
た９０ＫのＴｃを持つＹ系の材料が登場したため、材料
科学の分野で非常に注目され、盛んに研究されている。
このＹ系超電導体の９０ＫのＴｃは液体窒素の沸点であ
る７７Ｋよりも高い値であるため、従来の臨界温度の低
い超電導材料が、その冷媒として価格の高い液体ヘリウ
ムを利用する必要があったのに対して、Ｙ系の材料は冷
媒に安価な液体窒素を利用することが可能である。そし
て、その用途は超電導磁石用線材、量子磁気干渉素子、
超電導ＬＳＩ配線、さらに超電導高速能動素子等多くの
応用が考えられる。2. Description of the Related Art In recent years, a La-based material having a Tc of 40 K has been discovered as an oxide superconducting material having a high critical temperature (Tc).
As disclosed in Vol. 58, page 908 of Letters (Phys. Rev. Lett.), The emergence of a Y-based material having a Tc of 90K discovered by MKWu et al. Attention has been paid to research.
Since the Tc of 90K of this Y-based superconductor is higher than the boiling point of liquid nitrogen of 77K, the conventional superconducting material having a low critical temperature had to use expensive liquid helium as its refrigerant. On the other hand, in the case of the Y-based material, inexpensive liquid nitrogen can be used as the refrigerant. Its applications are superconducting magnet wires, quantum magnetic interference devices,
Many applications are conceivable, such as superconducting LSI wiring and superconducting high-speed active elements.
【０００３】このＹ系超電導体を用いた超電導素子を形
成するためには、この材料の高品質な薄膜を合成するこ
とが必要であるが、その薄膜化の方法としては、従来、
通常のマグネトロンスパッタ法や蒸着法等種々の方法が
試みられており、すでに成膜後の熱処理をしなくても９
０Ｋ程度の高いＴｃを得ることが可能となっている。こ
の時、基板にＹ系超電導体薄膜と結晶格子のミスマッチ
の小さい（１００）面のＳｒＴｉＯ3単結晶基板を用い
ることによって、Ｙ系超電導体のｃ軸が基板に垂直に配
向したエピタキシャル薄膜を得ることができている。[0003] In order to form a superconducting element using this Y-based superconductor, it is necessary to synthesize a high-quality thin film of this material.
Various methods such as a normal magnetron sputtering method and a vapor deposition method have been tried, and even if heat treatment after film formation is not already performed, 9 methods are required.
It is possible to obtain a high Tc of about 0K. At this time, by using a (100) plane SrTiO 3 single crystal substrate having a small mismatch between the Y-based superconductor thin film and the crystal lattice as the substrate, an epitaxial thin film in which the c-axis of the Y-based superconductor is oriented perpendicular to the substrate is obtained. I can do it.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
薄膜製造装置によって（１００）面のＳｒＴｉＯ3単結
晶基板上に形成されるＹ系超電導エピタキシャル薄膜
は、ＳｒＴｉＯ3基板が立方晶（格子定数は約３．９０オ
ンク゛ストロ-ム）であるのに対して、Ｙ系超電導体のａ軸とｂ
軸の格子定数が多少異なるために、ＳｒＴｉＯ3の［１
００］結晶方向に沿ってＹ系超電導体のａ軸とｂ軸の両
方が混ざった双晶を多く含んだ構造になっており、正確
な定義での単結晶薄膜を合成することには成功していな
い。このような双晶を多く含んだＹ系超電導薄膜におい
ては、薄膜内でａ軸とｂ軸がお互いに混ざりあって複雑
な構造をしているため、素子形成のための薄膜多層化等
を行うには適していなかった。本発明は、このような従
来の事情に対処してなされたもので、Ｙ系酸化物超電導
体を用いた素子形成を行うための薄膜多層化技術を可能
にする酸化物超電導薄膜製造装置を提供すると共に、本
装置を用いて、単結晶薄膜、すなわち（１００）面のＳ
ｒＴｉＯ3単結晶基板上にＹ系超電導体のａ軸とｂ軸の
方位がそれぞれ基板の方位と揃っている単結晶薄膜を製
造する方法を提供することにある。However, the Y-based superconducting epitaxial thin film formed on the (100) plane SrTiO 3 single crystal substrate by the conventional thin film manufacturing apparatus is composed of a cubic SrTiO 3 substrate (having a lattice constant of about 3.90 angstroms), while the a-axis and b
Since the lattice constants of the axes are slightly different, [1] of SrTiO 3
00] It has a structure containing many twins in which both the a-axis and the b-axis of the Y-based superconductor are mixed along the crystal direction, and succeeded in synthesizing a single-crystal thin film with an accurate definition. Not. In such a Y-based superconducting thin film containing many twins, the a-axis and the b-axis are mixed with each other in the thin film to form a complicated structure. Was not suitable for The present invention has been made in view of such a conventional situation, and provides an oxide superconducting thin film manufacturing apparatus which enables a thin film multi-layering technique for forming an element using a Y-based oxide superconductor. At the same time, using this apparatus, a single crystal thin film,
An object of the present invention is to provide a method for manufacturing a single crystal thin film in which the a-axis and b-axis directions of a Y-based superconductor are aligned with the substrate direction on an rTiO 3 single crystal substrate.
【０００５】[0005]
【課題を解決するための手段】本発明は、真空チャンバ
内に基板を保持する基板ホルダを備え、基板上に蒸発原
子を堆積させて酸化物超電導体の薄膜を形成する薄膜製
造装置において、基板ホルダには、基板の一軸に圧縮応
力を印加する高圧アンビルを備えていることを特徴とす
る酸化物超電導薄膜製造装置、および、（１００）面の
ＳｒＴｉＯ3単結晶基板の一軸に圧縮応力をかけつつ、
ＹＢａ2Ｃｕ3Ｏx（ｘは６．５〜７．０）で示される組
成の酸化物超電導単結晶薄膜を成膜することを特徴とす
る酸化物超電導単結晶薄膜の製造方法である。SUMMARY OF THE INVENTION The present invention relates to a thin film manufacturing apparatus comprising a substrate holder for holding a substrate in a vacuum chamber and depositing evaporated atoms on the substrate to form a thin film of an oxide superconductor. The holder has a high-pressure anvil for applying a compressive stress to one axis of the substrate, and an apparatus for producing an oxide superconducting thin film, and applies a compressive stress to one axis of a (100) plane SrTiO 3 single crystal substrate. While
A method for producing an oxide superconducting single crystal thin film, comprising forming an oxide superconducting single crystal thin film having a composition represented by YBa 2 Cu 3 O x (x is 6.5 to 7.0).
【０００６】[0006]
【作用】Ｙ系酸化物超電導体は、室温付近においては、
結晶構造は斜方晶であり、ａ軸，ｂ軸およびｃ軸の格子
定数は、それぞれ約３．８３，３．８９および１１．６
８（オンク゛ストロ-ム）であり、ａ軸とｂ軸の格子定数がわず
かに異なることがわかっている。このため、Ｙ系超電導
体では、通常、結晶の歪みを小さくするために、結晶中
に双晶が入り、ａ軸とｂ軸が入り混じった構造になって
いる。同様に、通常、（１００）面のＳｒＴｉＯ3単結
晶基板上にエピタキシャル成長した薄膜においても、双
晶が多く含まれており、ＳｒＴｉＯ3の［１００］方
向、および［０１０］方向それぞれに、Ｙ系超電導体の
ａ軸，ｂ軸の両方がともに観察される。本発明において
は、Ｙ系超電導体の薄膜形成中に、（１００）面のＳｒ
ＴｉＯ3単結晶基板の一軸、例えば［１００］軸に圧縮
応力をかける。このようにすると、［１００］軸は３．
９０オンク゛ストロ-ムよりも小さくなり、［０１０］軸は逆に
３．９０‰よりも大きくなってＳｒＴｉＯ3基板に歪み
が発生するため、Ｙ系超電導体のａ軸は圧縮応力のかけ
られた方向（［１００］方向）、ｂ軸はそれと垂直方向
（［０１０］方向）に揃ったほうが、ミスマッチのエネ
ルギ−が小さくなる。こうして、ａ軸およびｂ軸方向の
揃った、双晶のないＹ系超電導単結晶薄膜を製造するこ
とが可能となる。In the vicinity of room temperature, the Y-based oxide superconductor
The crystal structure is orthorhombic, and the lattice constants of the a-axis, b-axis and c-axis are about 3.83, 3.89 and 11.6, respectively.
8 (angstrom), and it is known that the lattice constants of the a-axis and the b-axis are slightly different. For this reason, the Y-based superconductor usually has a structure in which twins are contained in the crystal and a-axis and b-axis are mixed in order to reduce the distortion of the crystal. Similarly, a thin film epitaxially grown on a (100) SrTiO 3 single crystal substrate also contains a large amount of twins, and the Y-based SrTiO 3 has [Y] -based in each of [100] and [010] directions. Both the a-axis and the b-axis of the superconductor are observed. In the present invention, during the formation of the thin film of the Y-based superconductor, the Sr of the (100) plane is formed.
A compressive stress is applied to one axis of the TiO 3 single crystal substrate, for example, the [100] axis. In this way, the [100] axis becomes 3.
Since the [010] axis is larger than 3.90 ° and the SrTiO 3 substrate is distorted, the a-axis of the Y-based superconductor has a direction in which a compressive stress is applied. The energy of the mismatch is smaller when the b axis is aligned in the direction perpendicular to the (100 direction) (the [010] direction). In this way, it is possible to manufacture a Y-based superconducting single crystal thin film having no twins and aligned in the a-axis and b-axis directions.
【０００７】[0007]
【実施例】次に本発明の実施例について説明する。図１
は本発明による装置の１実施例を示す構成図であって、
多元同時蒸着装置を備えたものである。この薄膜製造装
置の真空チャンバ１中には、薄膜材料の蒸発源として電
子ビ―ム加熱源２ａ，２ｂ，２ｃが三基備えられてお
り、三種類の蒸着材料５ａ，５ｂ，５ｃをそれぞれ独立
に加熱溶解し、各成分を蒸発させることができる。各蒸
着材料はるつぼ中に２０ｃｃ準備することができる。こ
の際、加熱源としては、抵抗加熱源等、他の加熱源を用
いてもさしつかえない。基板８はインコネル製の基板ホ
ルダ９に固定されており、裏側に設置された基板ヒ−タ
１０によって、８５０℃程度まで加熱することができ
る。基板ホルダ９部分には本発明の特徴となる高圧用ア
ンビル１１が設置されていて、基板の一軸方向に３ＧＰ
ａ以下の圧縮応力をかけて、基板に歪みを与えることが
できるようになっている。なお、図１では多元蒸着法に
よる実施例を示したが、スパッタ法，レ−ザ蒸着法等、
他の薄膜製造技術を用いてもさしつかえない。Next, an embodiment of the present invention will be described. FIG.
FIG. 1 is a configuration diagram showing one embodiment of an apparatus according to the present invention,
It is equipped with a multi-source simultaneous vapor deposition device. The vacuum chamber 1 of this thin film manufacturing apparatus is provided with three electron beam heating sources 2a, 2b and 2c as evaporation sources for the thin film material, and the three kinds of evaporation materials 5a, 5b and 5c are independently provided. And each component can be evaporated. 20 cc of each deposition material can be prepared in a crucible. At this time, another heating source such as a resistance heating source may be used as the heating source. The substrate 8 is fixed to a substrate holder 9 made of Inconel, and can be heated to about 850 ° C. by a substrate heater 10 provided on the back side. A high-pressure anvil 11, which is a feature of the present invention, is installed in the substrate holder 9 portion.
The substrate can be strained by applying a compressive stress equal to or less than a. Although FIG. 1 shows an embodiment using a multi-source evaporation method, a sputtering method, a laser evaporation method, etc.
Other thin film manufacturing techniques may be used.
【０００８】次に、本発明による薄膜製造装置を用いた
Ｙ系超電導単結晶薄膜製造方法の一実施例を示す。基板
には（１００）面のＳｒＴｉＯ3単結晶を用い、基板の
形状は１ｍｍ×５ｍｍ（本実施例では、基板の１ｍｍの
方向に圧縮応力をかけ、１ｍｍの方向を基板の［１０
０］方向、５ｍｍの方向を［０１０］方向と定義し
た。）で、厚さは０．５ｍｍとした。Next, an embodiment of a method for manufacturing a Y-based superconducting single crystal thin film using the thin film manufacturing apparatus according to the present invention will be described. A (100) SrTiO 3 single crystal was used for the substrate, and the shape of the substrate was 1 mm × 5 mm (in this embodiment, a compressive stress was applied in the direction of 1 mm of the substrate, and the direction of
The [0] direction and the direction of 5 mm were defined as the [010] direction. ), The thickness was 0.5 mm.
【０００９】本実施例ではこの基板上にＹＢａ2Ｃｕ3Ｏ
x（ｘは６．５〜７．０）単結晶薄膜を製造した。薄膜
の作製に際しては、この基板８を基板ホルダ９に設置し
た後、最初に真空チャンバ１を真空ポンプ１２によって
１０-8Torr台まで排気する。この後、真空チャンバ１中
の圧力が４×１０-4Torr程度になるように、酸素ガスを
導入管１３によって導入する。この時、酸素ガスは、オ
ゾン発生器１４を通過させることによって活性化されて
おり、基板表面に向けて吹き付けられる。この方法を採
用することによって、成膜中に薄膜は十分に酸化され
て、成膜後に熱処理をしなくてもＹ系超電導体の構造を
形成することが可能となる。なお、成膜中の酸化方法と
しては、プラズマによる酸化等、他の方法を用いてもさ
しつかえない。基板８はヒ−タ１０によってＹ系超電導
体薄膜の成膜温度である６００〜７００℃に加熱され
る。この段階で、高圧用アンビル１１によって基板８の
［１００］方向に１ＧＰａ程度の圧縮応力をかけてＳｒ
ＴｉＯ3基板を歪ませる。この状態で、電子ビ―ム加熱
によって蒸着材料Ｙ，Ｂａ，Ｃｕを蒸発させるが、薄膜
の組成が目的の組成になるように、各ソ−スの蒸発速度
は別々に蒸発速度モニタ１５ａ，１５ｂ，１５ｃによっ
て制御されるようになっている。成膜時の膜堆積速度は
約１オンク゛ストロ-ム／sec で行った。また、作製した薄膜の
膜厚は１０００オンク゛ストロ-ム程度にした。本実施例におい
ては、成膜中とともに、成膜後の基板冷却中にも圧縮応
力をかけながら冷却した。冷却時に薄膜中に酸素が取り
込まれてａ軸とｂ軸の格子定数に差が出始めるため、単
結晶薄膜作製のためには、冷却中の加圧プロセスも成膜
中と同様に重要になってくる。基板温度が１００℃以下
になったところで酸素ガスを止めるとともに、高圧を除
いて、薄膜を真空チャンバから取り出した。In this embodiment, YBa 2 Cu 3 O is formed on this substrate.
An x (x is 6.5 to 7.0) single crystal thin film was manufactured. In preparing the thin film, after the substrate 8 is set on the substrate holder 9, the vacuum chamber 1 is first evacuated to a level of 10 -8 Torr by the vacuum pump 12. Thereafter, oxygen gas is introduced through the introduction pipe 13 so that the pressure in the vacuum chamber 1 becomes about 4 × 10 −4 Torr. At this time, the oxygen gas is activated by passing through the ozone generator 14, and is blown toward the substrate surface. By adopting this method, the thin film is sufficiently oxidized during the film formation, and the structure of the Y-based superconductor can be formed without heat treatment after the film formation. Note that other methods such as oxidation by plasma may be used as the oxidation method during film formation. The substrate 8 is heated by the heater 10 to a temperature of 600 to 700 ° C., which is a film forming temperature of the Y-based superconductor thin film. At this stage, the compressive stress of about 1 GPa is applied to the [8]
Distorts the TiO 3 substrate. In this state, the evaporation materials Y, Ba, and Cu are evaporated by electron beam heating, and the evaporation rates of the respective sources are separately set so that the composition of the thin film becomes a target composition. , 15c. The film was deposited at a deposition rate of about 1 Å / sec. The thickness of the formed thin film was set to about 1000 angstroms. In the present embodiment, cooling was performed while applying compressive stress both during the film formation and during the cooling of the substrate after the film formation. During cooling, oxygen is taken into the thin film and a difference in the lattice constant between the a-axis and the b-axis begins to appear. Therefore, the pressurization process during cooling is as important as during film formation for the production of single-crystal thin films. Come. When the substrate temperature became 100 ° C. or less, the oxygen gas was stopped, and the thin film was removed from the vacuum chamber except for the high pressure.
【００１０】このようにして作製した薄膜の構造をＸ線
回折法によって調べると、蒸着後の熱処理がなくてもＹ
系超電導体の構造を示しており、ｃ軸が基板面に垂直に
配向していることがわかった。ｃ軸の格子定数は１１．
６８オンク゛ストロ-ムで、バルクサンプルと同じ値を示すこと
から、薄膜中には十分に酸素が入っていることがわか
る。薄膜の電気抵抗を測定すると、９０Ｋ付近で明瞭な
超電導転移を示し、超電導特性も良好であることが確認
された。薄膜とＳｒＴｉＯ3基板との面内の結晶方位関
係を四軸Ｘ線回折装置によって評価した結果、Ｙ系超電
導体薄膜は（１００）面のＳｒＴｉＯ3単結晶基板上で
エピタキシャル成長しており、このとき、基板の［１０
０］方向とＹ系超電導体のａ軸が、また基板の［０１
０］方向とＹ系超電導体のｂ軸が揃っていることがわか
った。[0010] The structure of the thin film thus produced is examined by X-ray diffraction.
This shows the structure of the system superconductor, and it was found that the c-axis was oriented perpendicular to the substrate surface. The lattice constant of the c-axis is 11.
The same value as that of the bulk sample is obtained at 68 Å, indicating that the thin film contains sufficient oxygen. When the electric resistance of the thin film was measured, a clear superconducting transition was observed at around 90 K, and it was confirmed that the superconducting characteristics were also good. As a result of evaluating the in-plane crystal orientation relationship between the thin film and the SrTiO 3 substrate using a four-axis X-ray diffractometer, the Y-based superconductor thin film was epitaxially grown on the (100) plane SrTiO 3 single crystal substrate. , [10
0] direction and the a-axis of the Y-based superconductor
0] direction and the b-axis of the Y-based superconductor were found to be aligned.
【００１１】これに対して、成膜中に基板に圧縮応力を
かけずに成膜した薄膜、すなわち従来の薄膜製造装置に
よって製造した薄膜においては、基板の［１００］方向
にＹ系超電導体のａ軸およびｂ軸の両方が、また、［０
１０］方向にも両方が観察され、ａ軸とｂ軸が混ざった
構造で、本質的に双晶を含んでおり、正確な意味での単
結晶薄膜になっていなかった。一方、本発明によるＹ系
超電導体薄膜は、上記の如く、ａ軸およびｂ軸が揃った
構造であり、双晶を含んでいないことがわかった。さら
に、本発明のＹ系超電導体薄膜の微細構造を走査型電子
顕微鏡や透過型電子顕微鏡によって観察すると、結晶粒
界が全く観察されず、単結晶薄膜になっていることが確
認された。On the other hand, in a thin film formed without applying compressive stress to the substrate during film formation, that is, a thin film manufactured by a conventional thin film manufacturing apparatus, the Y-based superconductor is placed in the [100] direction of the substrate. Both the a and b axes are also [0
10], both were observed, and the structure was a mixture of the a-axis and the b-axis, essentially containing twins, and was not a single-crystal thin film in the correct sense. On the other hand, it was found that the Y-based superconductor thin film according to the present invention had a structure in which the a-axis and the b-axis were aligned as described above and did not contain twins. Further, when the microstructure of the Y-based superconductor thin film of the present invention was observed with a scanning electron microscope or a transmission electron microscope, it was confirmed that no crystal grain boundaries were observed, and the film was a single-crystal thin film.
【００１２】[0012]
【発明の効果】以上説明したように、本発明の酸化物超
電導薄膜製造装置および酸化物超電導単結晶薄膜の製造
方法によれば、（１００）面のＳｒＴｉＯ3単結晶基板
上に、双晶がなく、ａ軸およびｂ軸の完全に揃ったＹ系
超電導体の単結晶薄膜を製造することができるため、超
電導素子形成等への応用上、その効果は大きい。As described above, according to the apparatus for manufacturing an oxide superconducting thin film and the method for manufacturing an oxide superconducting single crystal thin film of the present invention, twins are formed on a (100) plane SrTiO 3 single crystal substrate. In addition, since a single-crystal thin film of a Y-based superconductor in which the a-axis and the b-axis are completely aligned can be manufactured, the effect is large in application to the formation of a superconducting element.
【図１】本発明による酸化物超電導薄膜製造装置の一例
の構成図である。FIG. 1 is a configuration diagram of an example of an apparatus for manufacturing an oxide superconducting thin film according to the present invention.
１ 真空チャンバ ２ａ，２ｂ，２ｃ 電
子ビ―ム加熱源 ５ａ，５ｂ，５ｃ 蒸着材料 ８ 基板 ９ 基板ホルダ １０ 基板ヒ−タ １１ 高圧用アンビル １２ 真空ポンプ １３酸素ガス導入管 １４オゾン発生器 １５ａ，１５ｂ，１５ｃ 蒸発速度モニタDESCRIPTION OF SYMBOLS 1 Vacuum chamber 2a, 2b, 2c Electron beam heating source 5a, 5b, 5c Evaporation material 8 Substrate 9 Substrate holder 10 Substrate heater 11 High pressure anvil 12 Vacuum pump 13 Oxygen gas introduction pipe 14 Ozone generator 15a, 15b , 15c Evaporation rate monitor
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 39/24 ＺＡＡ Ｈ０１Ｌ 39/24 ＺＡＡＺ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical display location H01L 39/24 ZAA H01L 39/24 ZAAZ
Claims (2)
ルダを備え、基板上に蒸発原子を堆積させて酸化物超電
導体の薄膜を形成する薄膜製造装置において、基板ホル
ダには、基板の一軸に圧縮応力を印加する高圧アンビル
を備えていることを特徴とする酸化物超電導薄膜製造装
置。An apparatus for manufacturing a thin film of an oxide superconductor comprising a substrate holder for holding a substrate in a vacuum chamber and depositing evaporated atoms on the substrate to form a thin film of an oxide superconductor. An apparatus for producing an oxide superconducting thin film, comprising a high-pressure anvil for applying compressive stress.
の一軸に圧縮応力をかけつつ、ＹＢａ2Ｃｕ3Ｏx（ｘは
６．５〜７．０）で示される組成の酸化物超電導単結晶
薄膜を成膜することを特徴とする酸化物超電導単結晶薄
膜の製造方法。2. An oxide superconducting single crystal having a composition represented by YBa 2 Cu 3 O x (x is 6.5 to 7.0) while applying a compressive stress to a uniaxial SrTiO 3 single crystal substrate having a (100) plane. A method for producing an oxide superconducting single crystal thin film, comprising forming a crystal thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2412926A JP2715667B2 (en) | 1990-12-25 | 1990-12-25 | Apparatus for producing oxide superconducting thin film and method for producing oxide superconducting single crystal thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2412926A JP2715667B2 (en) | 1990-12-25 | 1990-12-25 | Apparatus for producing oxide superconducting thin film and method for producing oxide superconducting single crystal thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04228498A JPH04228498A (en) | 1992-08-18 |
| JP2715667B2 true JP2715667B2 (en) | 1998-02-18 |
Family
ID=18521666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2412926A Expired - Fee Related JP2715667B2 (en) | 1990-12-25 | 1990-12-25 | Apparatus for producing oxide superconducting thin film and method for producing oxide superconducting single crystal thin film |
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| Country | Link |
|---|---|
| JP (1) | JP2715667B2 (en) |
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| JP4516199B2 (en) | 2000-09-13 | 2010-08-04 | キヤノンアネルバ株式会社 | Sputtering apparatus and electronic device manufacturing method |
| JP2013147557A (en) | 2012-01-18 | 2013-08-01 | Brother Industries Ltd | Water-based ink set for inkjet recording |
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1990
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| Publication number | Publication date |
|---|---|
| JPH04228498A (en) | 1992-08-18 |
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