JP2026019278A - Perovskite film forming apparatus and perovskite film forming method - Google Patents

Abstract

An apparatus capable of forming a high-quality perovskite film is provided.
[Solution] In an embodiment of the perovskite film forming apparatus (10), a solution containing a perovskite precursor and a solvent is applied to a substrate (1) and the perovskite precursor is crystallized to form a perovskite film, and the apparatus (10) is characterized in that it is provided with two zones through which the substrate (1) passes: a solvent removal chamber (14) in which the solvent is removed from the solution applied to the substrate (1) without crystallizing the perovskite precursor; and a crystallization chamber (15) in which the perovskite precursor is crystallized on the substrate (1) after passing through the solvent removal chamber (14) to form a perovskite film.
[Selected Figure] Figure 1

Description

The present invention relates to a perovskite film formation apparatus and a perovskite film formation method.

In recent years, perovskite solar cells have been attracting attention as a thin, lightweight solar cell that is expected to have high power generation efficiency. Perovskite solar cells generate electricity by absorbing sunlight in a perovskite film and generating free electrons and holes.

The method for manufacturing a perovskite film begins by applying a solution to a substrate. This application method is known as spin coating, in which a solution containing a perovskite precursor and a solvent is ejected onto the substrate and the substrate is rotated to spread the solution over the substrate. The substrate with the applied solution is then heated on a hot plate to remove the solvent and crystallize the perovskite precursor, forming a perovskite film.

As described in Patent Document 1, it has also been proposed to apply a solution from a moving nozzle to a substrate, place the substrate after application in a reduced-pressure environment to volatilize the solvent and promote crystallization of the perovskite precursor into perovskite (i.e., perovskite formation), and then place the substrate in a heated environment to further promote perovskite formation.

JP 2024-14770 A

However, with each of the above methods, the evaporation of the solvent and the formation of perovskite occur simultaneously. This leads to uneven crystalline structures that reduce power generation efficiency and the formation of defects (voids) that can cause short circuits. The current difficulty in forming high-quality perovskite films is hindering the widespread use of perovskite solar cells.

Attempts have also been made to improve the quality of perovskite films by modifying the solution, such as adding an ionic liquid to a solution containing perovskite precursors, or the antisolvent method, in which a poor solvent is dripped onto the solution on the substrate during spin coating. However, these methods were only used in university experiments or at the research and development stage in companies, and were not suitable for mass-producing perovskite films, which is necessary for the widespread use of perovskite solar cells.

The present invention was made in light of these circumstances, and aims to provide an apparatus and method capable of mass-producing high-quality perovskite films.

In one embodiment, a perovskite film formation apparatus is provided that forms a perovskite film by crystallizing a solution containing a perovskite precursor and a solvent on a substrate to which the solution is applied, the perovskite precursor being crystallized. The perovskite film formation apparatus is characterized in that it includes: a solvent removal chamber, through which the continuously transported substrate passes; a zone in which the solution on the substrate is heated to a temperature at which the solvent evaporates but the perovskite precursor does not crystallize, thereby removing the solvent from the solution applied to the substrate without crystallizing the perovskite precursor; and a crystallization chamber, which is a zone in which the perovskite precursor is heated to a crystallization temperature or higher on the substrate from which the solvent has been removed after passing through the solvent removal chamber, thereby crystallizing the perovskite precursor to form the perovskite film.

Furthermore, a perovskite film formation method according to an embodiment includes a step of forming a perovskite film by crystallizing a solution containing a perovskite precursor and a solvent on a substrate to which the solution has been applied, the perovskite precursor being crystallized, the step comprising: heating the solution on the substrate to a temperature at which the solvent evaporates but the perovskite precursor does not crystallize, thereby removing the solvent from the solution applied to the substrate without crystallizing the perovskite precursor; and, after the solvent removal step, heating the perovskite precursor to a temperature equal to or higher than the crystallization temperature on the substrate from which the solvent has been removed, thereby crystallizing the perovskite precursor to form the perovskite film.

The perovskite film formation apparatus described above allows a high-quality perovskite film to be formed and mass-produced by passing the substrate through a solvent removal chamber and a crystallization chamber in sequence. Furthermore, the perovskite film formation method described above allows a high-quality perovskite film to be formed and mass-produced by crystallizing the perovskite precursor after removing the solvent from the solution applied to the substrate.

FIG. 1 is a side view of a perovskite film forming apparatus. FIG. 1 is a side view of a substrate with a solution applied thereto. Side view of the solvent removal chamber. Side view of the crystallization chamber. Block diagram of a perovskite film formation device.

A perovskite film forming apparatus 10 according to one embodiment of the present invention will be described with reference to Figures 1 to 5. In the following description, the side in the direction of travel of the elongated substrate 1 will be referred to as the front, and the opposite side will be referred to as the rear. Furthermore, left and right refer to the left and right when viewed from the front to the rear.

(1) Overall Configuration of Perovskite Film Forming Apparatus 10 As shown in FIG. 1 , the perovskite film forming apparatus 10 is configured with a coating chamber 13, a solvent removal chamber 14, a crystallization chamber 15, and an annealing chamber 16 lined up from rear to front. A first pressure adjustment chamber 17 is provided between the coating chamber 13 and the solvent removal chamber 14, a second pressure adjustment chamber 18 is provided between the solvent removal chamber 14 and the crystallization chamber 15, and a third pressure adjustment chamber 19 is provided between the crystallization chamber 15 and the annealing chamber 16. Each of the pressure adjustment chambers 17, 18, and 19 is separated from the adjacent zones on both sides by partition walls 29 (see FIGS. 3 and 4 ), each having an opening through which the substrate 1 can pass. The perovskite film forming apparatus 10 also includes an unwinding unit 11 and a surface treatment unit 12.

(2) Configuration of the Unwinding Section 11 and the Surface Treatment Section 12 The unwinding section 11 is provided with a winding shaft 20. The substrate 1 before being coated with a solution is wound around the winding shaft 20. The winding shaft 20 is rotated by the drive of a motor to unwind the substrate 1. Before being coated with a solution, the substrate 1 is formed by laminating a transparent conductive film and an electron transport layer on a transparent film such as a polyethylene terephthalate film. The width of the substrate 1 is, for example, 200 mm to 1000 mm.

The surface treatment section 12 is a section that performs surface treatment on the substrate 1 transported from the unwinding section 11. The surface treatment is a treatment that improves the wettability of the electron transport layer of the substrate 1, and is, for example, a corona treatment, a plasma treatment, a UV treatment, or the like. The surface treatment section 12 also removes dust from the substrate 1.

(3) Configuration of Coating Chamber 13 The coating chamber 13 is provided with a die 21 and a backup roller 22 located in front of the die 21. The backup roller 22 is one of the rollers that transport the substrate 1, and is rotated by being driven by a motor. The rotation axis of the backup roller 22 extends in the left-right direction. The substrate 1 transported from the surface treatment section 12 located below the backup roller 22 changes its transport direction at the backup roller 22 and is transported forward. In the vicinity of the die 21, the backup roller 22 transports the substrate 1 from bottom to top.

The die 21 ejects the solution toward the substrate 1, which is in contact with the backup roller 22, and applies the solution to a predetermined coating thickness across the entire width (left-right) of the substrate 1. The surface of the substrate 1 onto which the solution is applied is the upper surface in the solvent removal chamber 14 and the crystallization chamber 15.

For reference, Figure 2 shows the state in which the solution is applied to the substrate 1 to form the solution layer 2. Figure 2 shows the substrate 1 immediately after it enters the solvent removal chamber 14. Note that in this specification, the substrate 1 after the solution has been applied may also be referred to simply as "substrate 1."

The solution contains a perovskite precursor and a solvent. The perovskite precursor is a material in a stage before crystallization to form perovskite. For example, when attempting to produce methylammonium lead iodide CH ₃ NH ₃ PbI ₃ as the perovskite, lead iodide PbI ₂ and methylammonium iodide CH ₃ NH ₃ I are used as the perovskite precursor. The solvent also absorbs infrared light at a specific wavelength, for example, infrared light with a wavelength of 10 μm or less. The solvent and the perovskite precursor absorb different infrared wavelengths. Different infrared absorption wavelengths mean different infrared absorption spectra. Specific examples of solvents include N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO).

(4) Configuration of the Solvent Removal Chamber 14 The solvent removal chamber 14 is shown in Figure 3. The solvent removal chamber 14 has a rectangular parallelepiped exterior shape, is thermally insulated, and is isolated from other areas. The solvent removal chamber 14 also has an inlet for the substrate 1 at the rear and an outlet for the substrate 1 at the front. In the solvent removal chamber 14, multiple transport rollers 30 are lined up in the front-to-rear direction. Each transport roller 30 is rotated by a motor. The rotation axis of each transport roller 30 extends in the left-to-right direction. These transport rollers 30 transport the substrate 1 placed thereon. The transport rollers 30 also have the role of keeping the substrate 1 horizontal to prevent the applied solution from flowing.

A roller cooling device 33 (see Figure 5) is provided to cool at least the outer peripheral surfaces of these multiple conveying rollers 30. Although not shown, the roller cooling device 33 includes fluid flow paths formed inside the conveying rollers 30 and a circulation device for circulating fluid (e.g., water or air) through these flow paths. Alternatively, the roller cooling device 33 includes Peltier elements provided on each conveying roller 30 and a power source for applying electricity to these Peltier elements.

The roller cooling device 33 cools the transport roller 30, thereby cooling the substrate 1 (see Figure 2) placed on the transport roller 30 from below. As will be explained below, in the solvent removal chamber 14, the solvent evaporates from the solution layer 2 on the substrate 1, and in this process, latent heat of evaporation is removed from the surface (upper surface) of the solution layer 2. The cooling capacity of the roller cooling device 33 is set so that the cooled transport roller 30 can remove from the substrate 1 an amount of heat equal to the latent heat removed at this time.

A single infrared irradiation device 31 is provided in the solvent removal chamber 14 above the conveying rollers 30. The infrared irradiation device 31 irradiates infrared light of a wavelength that is absorbed by the solvent but not easily absorbed by the perovskite precursor. When a solvent that absorbs infrared light with a wavelength of 10 μm or less is used, an infrared irradiation device 31 that irradiates infrared light with a wavelength of 10 μm or less is used. An infrared irradiation device 31 that irradiates infrared light of such a specific wavelength range is realized by combining a device that irradiates infrared light over a wider wavelength range with a filter that passes only infrared light of a specific wavelength range (for example, a low-pass filter that passes only infrared light with a wavelength of 10 μm or less).

The infrared irradiation device 31 is sufficiently large in both the front-to-back and left-to-right directions (for example, formed in a flat shape) and is capable of irradiating infrared rays over a wide range in the front-to-back direction and the entire left-to-right direction (width direction) of the substrate 1. The left-to-right length of the infrared irradiation device 31 is preferably long enough to uniformly irradiate the substrate 1 with infrared rays; for example, it is preferably longer than the left-to-right length of the substrate 1, and is also preferably longer than the left-to-right length of the conveying roller 30.

The infrared rays from this infrared irradiation device 31 are irradiated onto the substrate 1 as shown by the dashed arrow in Figure 3, evaporating the solvent in the solution through radiation. By irradiating the infrared rays, the temperature of the solution becomes higher than the ambient temperature in the solvent removal chamber 14 (for example, to around 70°C), but does not rise to the temperature at which the perovskite precursor crystallizes (for example, to around 100°C).

The ambient temperature in the solvent removal chamber 14 is sufficiently lower than the temperature at which the perovskite precursor crystallizes to form perovskite, for example, 30°C to 50°C.

A straightening device is also provided above the conveying rollers 30 in the solvent removal chamber 14. The straightening device consists of a blower 32a that blows air and an air suction device 32b that sucks in air. The blower 32a is provided above and behind the conveying rollers 30 in the solvent removal chamber 14, and blows air forward and horizontally. The air suction device 32b is provided at the same height and forward as the blower 32a in the solvent removal chamber 14, and sucks in air blown in from behind.

With this arrangement of the blower 32a and the suction device 32b, air is sent from the blower 32a to the suction device 32b, as shown by the solid arrow in Figure 3. As a result, air flows over the substrate 1 on the transport roller 30 in the same direction as the transport direction of the substrate 1. The speed of the air flow is controlled to be the same as the transport speed of the substrate 1. The temperature of the air sent from the blower 32a is the same as the temperature of the air in the solvent removal chamber 14, for example, 30°C to 50°C.

(5) Structure of Crystallization Chamber 15 The crystallization chamber 15 is shown in Figure 4. The crystallization chamber 15 has a rectangular parallelepiped exterior shape, is thermally insulated, and is isolated from other areas. The crystallization chamber 15 also has an entrance for the substrate 1 at the rear and an exit for the substrate 1 at the front. In the crystallization chamber 15, multiple transport rollers 40 are aligned in the front-to-rear direction. Each transport roller 40 is rotated by a motor. The rotation axis of each transport roller 40 extends in the left-to-right direction. These transport rollers 40 transport the substrate 1 placed thereon.

In the crystallization chamber 15, multiple nozzles 41 are aligned in the front-to-rear direction above the transport rollers 40. These nozzles 41 blow hot air onto the substrate 1 transported by the transport rollers 40, heating it to a temperature above the crystallization temperature of the perovskite precursor (for example, around 100°C) to cause crystallization. The interior of each nozzle 41 is a hot air flow path extending in the vertical direction. A front outlet 41a and a rear outlet 41b are formed at the bottom of each nozzle 41. The front outlet 41a is an outlet that blows the hot air inside the nozzle 41 obliquely forward and downward. The rear outlet 41b is an outlet that blows the hot air inside the nozzle 41 obliquely backward and downward.

In addition, an intake port 42 is provided above the conveying roller 40 to suck in hot air from within the crystallization chamber 15. The intake ports 42 and the nozzles 41 are arranged alternately in the front-to-back direction, with the intake port 42 located between adjacent nozzles 41. The intake port 42 is located higher than the front outlet 41a and rear outlet 41b of the nozzle 41. With this structure, the hot air ejected diagonally downward from the front outlet 41a and rear outlet 41b of the nozzle 41 rises in a relatively short time and is sucked into the intake port 42. The flow of this hot air is shown by arrows in Figure 4. This flow of hot air makes it less likely for the hot air to leak out of the crystallization chamber 15.

All nozzles 41 and all suction ports 42 are located on the ceiling of the crystallization chamber 15, not on the sides. This makes it difficult for hot air to flow left and right in the crystallization chamber 15, and temperature changes from side to side are unlikely to occur.

Furthermore, the widths (left-right lengths) of the front outlet 41a, rear outlet 41b, and suction port 42 are each approximately the same as the left-right length of the transport roller 40, and are, for example, 100% to 120% of the left-right length of the transport roller 40. This makes it easier to heat the entire width (left-right direction) of the crystallization chamber 15 uniformly. Note that the structure of the nozzle 41 is not limited to this, and any structure that heats the substrate 1 evenly will suffice.

The crystallization chamber 15 is maintained at a substantially uniform temperature throughout. The ambient temperature in the crystallization chamber 15 is the temperature at which the perovskite precursor crystallizes, for example, around 100°C.

An exhaust chamber 43 connected to the suction port 42 is provided above the crystallization chamber 15. An air supply chamber 44 is also provided surrounded by the exhaust chamber 43, and air supply paths 45 are provided from the air supply chamber 44 to each nozzle 41. Air taken in from outside the perovskite film formation apparatus 10 is heated by a heater (not shown), and then blown into the crystallization chamber 15 after passing through the air supply chamber 44, air supply path 45, and nozzle 41. Air taken in through the suction port 42 passes through the exhaust chamber 43 and is discharged outside the perovskite film formation apparatus 10.

(6) Configuration of Annealing Chamber 16 As shown in Fig. 1, the annealing chamber 16 is provided with an air intake port 51 that supplies hot air heated by a heater into the annealing chamber 16, and an exhaust port 52 that exhausts the air inside the annealing chamber 16 to the outside. The hot air supplied from the air intake port 51 maintains the ambient temperature of the annealing chamber 16 at a temperature lower than the temperature of the crystallization chamber 15 and higher than room temperature. Room temperature refers to the ambient temperature of the perovskite film formation apparatus 10 when the perovskite film formation apparatus 10 is in operation.

The annealing chamber 16 is also equipped with a dehumidifier (not shown). The dehumidifier controls the humidity in the annealing chamber 16 to, for example, 30% or less. It is also preferable that dehumidifiers be installed in the coating chamber 13, solvent removal chamber 14, and crystallization chamber 15, and that the humidity in each chamber be controlled to, for example, 30% or less.

The annealing chamber 16 also serves as a winding section that winds up the perovskite film laminate 3, in which a perovskite film is formed on the substrate 1. A winding shaft 50 is disposed in the winding section. The winding shaft 50 rotates when driven by a motor, and winds up the perovskite film laminate 3.

(7) Configuration of Pressure Adjustment Chambers 17, 18, 19 The second pressure adjustment chamber 18 located between the solvent removal chamber 14 and the crystallization chamber 15 will now be described. As shown in Fig. 4, the second pressure adjustment chamber 18 is provided with an air inlet 23 and an exhaust port 24. Dampers 23a and 24a (see Fig. 5) are provided in the ducts leading to the air inlet 23 and the exhaust port 24, respectively, and the amount of air supplied from the air inlet 23 and the amount of air exhausted from the exhaust port 24 can be controlled by controlling the dampers 23a and 24a. A fan may be provided in the duct.

In addition, the solvent removal chamber 14 and the crystallization chamber 15, which are adjacent to the second pressure adjustment chamber 18, are each equipped with air pressure sensors 25a and 25b (see Figure 5) that measure air pressure.

The control unit 60, which will be described next, constantly monitors the difference in air pressure between the solvent removal chamber 14 and the crystallization chamber 15, measured by the air pressure sensors 25a and 25b. When a difference in air pressure occurs between these two zones (i.e., the solvent removal chamber 14 and the crystallization chamber 15) or when the difference in air pressure between these two zones exceeds a predetermined value, the control unit 60 controls the dampers 23a and 24a to supply or exhaust air to the second pressure adjustment chamber 18, thereby substantially eliminating the difference in air pressure between these two zones. For example, when the control unit 60 supplies air to the second pressure adjustment chamber 18, air supplied to the second pressure adjustment chamber 18 from the outside flows into the zone with the lower air pressure, substantially eliminating the difference in air pressure between the two zones. When the control unit 60 exhausts air from the second pressure adjustment chamber 18, air from the zone with the higher air pressure passes through the second pressure adjustment chamber 18 and is exhausted to the outside, substantially eliminating the difference in air pressure between the two zones.

By substantially eliminating the difference in air pressure between the solvent removal chamber 14 and the crystallization chamber 15, there is almost no air flow between the solvent removal chamber 14 and the crystallization chamber 15, and conditions such as temperature are maintained in each of the solvent removal chamber 14 and the crystallization chamber 15.

The first pressure adjustment chamber 17 and the third pressure adjustment chamber 19 have the same structure as the second pressure adjustment chamber 18 and are controlled in the same way as the second pressure adjustment chamber 18. This makes it difficult for air to flow between the areas on either side of the pressure adjustment chambers 17 and 19, and conditions such as temperature are maintained in those areas.

(8) Electrical Configuration of Perovskite Film Forming Apparatus 10 The perovskite film forming apparatus 10 is equipped with a control unit 60 consisting of a computer. As shown in Fig. 5, the control unit 60 is connected to the infrared irradiation device 31, roller cooling device 33, air blower 32a, air intake device 32b, dampers 23a and 24a, and air pressure sensors 25a and 25b. Although not shown, the control unit 60 is also connected to the motors that rotate the various rollers, heaters that heat the air, and the like. The control unit 60 controls the connected devices.

(9) Perovskite Film Formation Method In this embodiment, one long substrate 1 is unwound from a winding shaft 20 at an unwinding section 11, and is wound around a winding shaft 50 in an annealing chamber 16. As a result, the substrate 1 is continuously transported through the coating chamber 13, first pressure adjustment chamber 17, solvent removal chamber 14, second pressure adjustment chamber 18, crystallization chamber 15, third pressure adjustment chamber 19, and annealing chamber 16 in this order. The transport speed of the substrate 1 from the unwinding section 11 to the annealing chamber 16 is adjusted as appropriate, and is, for example, 5 to 20 m/min.

In the coating chamber 13, the solution is ejected from the die 21 toward the substrate 1, which is in contact with the backup roller 22, and the solution is applied to the electron transport layer side of the substrate 1 (the side opposite the film side).

In the solvent removal chamber 14, the substrate 1 is transported over multiple transport rollers 30. In the solvent removal chamber 14, the substrate 1 is placed with the side coated with the solution facing up. Thereafter, the substrate 1 is transported horizontally with the side coated with the solution facing up until just before it is taken up onto the take-up shaft 50 in the annealing chamber 16.

As the substrate 1 is transported through the solvent removal chamber 14, an infrared irradiation device 31 above irradiates it with infrared light of a wavelength that is absorbed by the solvent but not easily absorbed by the perovskite precursor. This causes the solvent in the solution to evaporate through radiation and be removed from the substrate 1. Note that, as a result of the infrared irradiation, the temperature of the solution rises to the temperature at which the solvent evaporates (e.g., around 70°C), but does not rise to the temperature at which the perovskite precursor crystallizes (e.g., around 100°C). As a result, perovskite is not produced in the solvent removal chamber 14.

When the solvent evaporates, the latent heat of evaporation is removed from the solution, causing the temperature of the surface (upper surface) of the solution layer 2 to drop. If the temperature of the surface of the solution layer 2 drops but the temperature on the substrate 1 side remains high, convection will occur in the solution, causing Bénard cells to form. When the perovskite precursor crystallizes in a state where Bénard cells have formed, the cell boundaries become grain boundaries, and cracks are more likely to occur at these grain boundaries. The term "Bénard cells" refers to the regularly spaced cellular convection structure that forms when a thin layer of fluid is heated uniformly from below.

However, in the solvent removal chamber 14 of this embodiment, the conveying rollers 30 are cooled by the roller cooling device 33, and the conveying rollers 30 cool the substrate 1 from below. As a result, the surface temperature of the solution layer 2 and the temperature on the substrate 1 side become approximately equal, making it difficult for convection to occur in the solution.

In addition, above the substrate 1 being transported through the solvent removal chamber 14, a rectifier device blows air in the same direction as the substrate 1 is transported, at a speed controlled to be the same as the speed at which the substrate 1 is transported. This makes it difficult for air convection to occur above the solution layer 2 on the substrate 1, and prevents the formation of wind ripples or other irregularities in the solution layer 2. This also has the effect of causing the evaporated solvent to ride on the air from the air blower 32a and be sucked into the air intake device 32b, where it is expelled from the solvent removal chamber 14.

In the crystallization chamber 15, the substrate 1 from which the solvent has been removed is transported over multiple transport rollers 40. During transport, hot air from the nozzles 41 heats the perovskite precursor on the substrate 1, causing it to crystallize into perovskite, forming a perovskite film. Because the substrate 1 is transported from which the solvent has been removed, evaporation of the solvent and perovskite formation do not occur simultaneously, resulting in a uniform crystalline state and reducing the formation of defects (voids) that can cause short circuits. Furthermore, as described above, convection is less likely to occur in the solution on the substrate 1, and the entire crystallization chamber 15 maintains a substantially uniform temperature, resulting in a perovskite film of uniform quality being formed over the entire substrate 1.

In the annealing chamber 16, the perovskite film laminate 3, in which a perovskite film is formed on the substrate 1, is wound around the winding shaft 50 and finally formed into a large roll. The perovskite film is heated from the time the perovskite film laminate 3 enters the annealing chamber 16 until the rolled perovskite film laminate 3 is removed from the annealing chamber 16. Heating in the annealing chamber 16 relieves stress in the perovskite film. Furthermore, because the annealing chamber 16 has a lower temperature than the crystallization chamber 15, the perovskite film laminate 3 does not cool rapidly when removed from the annealing chamber 16, making it less likely to crack.

The perovskite film laminate 3 removed from the annealing chamber 16 is transported to another device. In this device, a hole transport layer and electrodes are layered on top of the perovskite film in the perovskite film laminate 3, creating a perovskite solar cell.

(10) Effects The perovskite film forming apparatus 10 of this embodiment includes a solvent removal chamber 14, which is a zone in which the solvent is removed from the solution applied to the substrate 1 without crystallizing the perovskite precursor, and a crystallization chamber 15, which is a zone in which the perovskite precursor is crystallized on the substrate 1 after passing through the solvent removal chamber 14 to form a perovskite film. This prevents the removal of the solvent and the crystallization of the perovskite from proceeding simultaneously, making it possible to form a high-quality perovskite film with a uniform crystal structure and few defects. Furthermore, because the perovskite film can be formed by passing the substrate 1 through the solvent removal chamber 14 and the crystallization chamber 15 in sequence, perovskite films can be continuously manufactured and mass-produced.

As described above, the high quality of the perovskite film means that perovskite solar cells have high power generation efficiency and good durability. Furthermore, the ability to form high-quality perovskite films improves yields during mass production. These factors are expected to lead to the widespread use of perovskite solar cells, reducing the use of fossil fuels for power generation and the associated carbon dioxide emissions.

The perovskite film forming apparatus 10 is also provided with an unwinding section 11 that unwinds the substrate 1 before the solution is applied, and a winding section (annealing chamber 16) that winds up the perovskite film laminate 3, in which a perovskite film is formed on the substrate 1. Between the unwinding section 11 and the winding section, a coating chamber 13, a solvent removal chamber 14, and a crystallization chamber 15 are provided. As a result, a single long substrate 1 is unwound from the unwinding section 11 on one side and wound up in the winding section on the other side. During the transport of the substrate 1 from the unwinding section 11 to the winding section as described above, the solution can be applied to the substrate 1, the solvent can be removed from the solution, and the perovskite precursor can be crystallized. This enables more efficient mass production of perovskite film laminates 3.

The solvent removal chamber 14 is also equipped with an infrared irradiation device 31 that irradiates the solution with infrared light of a wavelength that is absorbed by the solvent but not easily absorbed by the perovskite precursor. The infrared irradiation device 31 irradiates the solution with infrared light. This allows the solvent to evaporate, but heats the solution to a temperature that does not cause the perovskite precursor to crystallize, thereby removing the solvent. This allows the solvent to be removed from the solution without raising the temperature of the perovskite precursor to a temperature that causes crystallization, preventing solvent removal and crystallization from occurring simultaneously.

The solvent removal chamber 14 is also provided with transport rollers 30 for transporting the substrate 1 thereon, and a roller cooling device 33 for cooling the transport rollers 30. The transport rollers 30 are configured to transport the substrate 1 with the solution-coated side facing up. Therefore, by cooling the transport rollers 30, the substrate 1 can be cooled from the underside, lowering the temperature of the substrate 1 side of the solution layer 2. As a result, even if the temperature of the surface (upper surface) of the solution layer 2 drops due to solvent evaporation, it is possible to prevent temperature differences and convection within the solution layer 2, thereby preventing the formation of Benard cells and the resulting cracks.

In addition, the solvent removal chamber 14 is provided with a straightening device that sends air above the transport rollers 30, which allows the air flow to be straightened above the solution layer 2 on the substrate 1, preventing the formation of irregularities in the solution layer 2. Here, because the direction of the air sent by the straightening device is the same as the transport direction of the substrate 1, irregularities in the form of wind ripples are less likely to form in the solution layer 2.

In addition, a second pressure adjustment chamber 18 is provided between the solvent removal chamber 14 and the crystallization chamber 15, and the intake and exhaust of air in the second pressure adjustment chamber 18 is controlled to eliminate the difference in air pressure between the solvent removal chamber 14 and the crystallization chamber 15. As a result, there is almost no difference in air pressure between the solvent removal chamber 14 and the crystallization chamber 15, air flow between the crystallization chamber 15 and the solvent removal chamber 14 is unlikely to occur, and conditions such as temperature are maintained in each of the crystallization chamber 15 and the solvent removal chamber 14. For example, it is unlikely that a situation will occur in which high-temperature air from the crystallization chamber 15 flows into the solvent removal chamber 14, causing the solvent removal chamber 14 to become hot and causing the perovskite precursor to crystallize in the solvent removal chamber 14.

In addition, pressure adjustment chambers 17 and 19 are provided between the coating chamber 13 and the solvent removal chamber 14, and between the crystallization chamber 15 and the annealing chamber 16. This reduces air movement between the coating chamber 13 and the solvent removal chamber 14, and between the crystallization chamber 15 and the annealing chamber 16, ensuring that the temperature and other parameters of each zone are maintained at appropriate values.

In addition, in the crystallization chamber 15, hot air is applied to the substrate 1 being transported by the transport rollers 40, heating it to a temperature above the crystallization temperature of the perovskite precursor, thereby carrying out crystallization. Furthermore, because the substrate 1 is transported to the crystallization chamber 15 from which the solvent has been removed, evaporation of the solvent and perovskite formation do not occur simultaneously. When the perovskite precursor is crystallized by the hot air from the nozzle 41 to form a perovskite film, a uniform crystalline state is achieved, and defects (voids) that could cause short circuits are less likely to form.

In addition, in the crystallization chamber 15, multiple nozzles 41 each equipped with hot air outlets 41a, 41b are arranged in a line in the front-to-back direction, and air inlets 42 are provided between adjacent nozzles 41. This allows the hot air blown out from the outlets 41a, 41b to be sucked into the inlets 42 and discharged in a relatively short time. As a result, the temperature rise caused by the hot air is localized, and the temperature of the hot air is less likely to be transmitted to the solvent removal chamber 14. This prevents the perovskite precursor from crystallizing in the solvent removal chamber 14.

In addition, the annealing chamber 16 is provided as the area where the substrate 1 reaches after passing through the crystallization chamber 15, allowing stress in the crystallized perovskite to be relieved. Here, the perovskite film laminate 3 is wound up in the annealing chamber 16, allowing stress in the perovskite to be relieved while the perovskite film laminate 3 is being wound up. Furthermore, because the temperature in the annealing chamber 16 is lower than that of the crystallization chamber 15 but higher than room temperature, the perovskite film is not rapidly cooled when the perovskite film laminate 3 is moved from the crystallization chamber 15 to the annealing chamber 16 or when it is removed from the annealing chamber 16, making it less likely to crack.

In addition, by controlling the humidity in the annealing chamber 16 using a dehumidifier, deterioration of the perovskite film can be prevented.

The perovskite film formation method of this embodiment also includes the steps of removing the solvent from the solution applied to the substrate 1 without crystallizing the perovskite precursor, and, after the solvent removal step, crystallizing the perovskite precursor on the substrate 1 to form a perovskite film. This allows the removal of the solvent to be performed separately from the crystallization of the perovskite precursor into perovskite, making it possible to form a high-quality perovskite film with a uniform crystal structure and few defects.

(11) Modifications The above disclosure is merely an example, and various modifications can be made.

For example, the solvent removal chamber 14 may be provided with a blower that blows air toward the substrate 1 at a temperature equal to or lower than that of the solvent removal chamber 14 (e.g., room temperature or a temperature low enough to prevent condensation), and the air from the blower may prevent the temperature of the perovskite precursor on the substrate 1 from rising.

In addition, instead of indirectly cooling the substrate 1 by cooling the conveying roller 30 in the solvent removal chamber 14, the substrate 1 may be cooled in advance at a stage prior to the solvent removal in the solvent removal chamber 14.

Furthermore, the pressure adjustment chamber may be any chamber capable of reducing the pressure difference between the areas before, after, and on both sides of the chamber, and the specific configuration and control method may differ from the configuration and control method of the pressure adjustment chambers 17, 18, and 19 described above.

Alternatively, a winding shaft 50 may be positioned ahead of the annealing chamber 16, and the substrate 1 may be wound onto the winding shaft 50 after passing through the annealing chamber 16. In this case, the location where the winding shaft 50 is positioned can be considered the winding section.

Although one embodiment of the present invention has been described above, this embodiment is presented by way of example and is not intended to limit the scope of the invention. These novel embodiments may be embodied in a variety of other forms, and various omissions, substitutions, and modifications may be made without departing from the spirit of the invention. These embodiments and their variations are within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as set forth in the claims.

DESCRIPTION OF SYMBOLS 1...substrate, 2...solution layer, 3...perovskite film laminate, 10...perovskite film forming apparatus, 11...unwinding section, 12...surface treatment section, 13...coating chamber, 14...solvent removal chamber, 15...crystallization chamber, 16...annealing chamber, 17...first pressure adjustment chamber, 18...second pressure adjustment chamber, 19...third pressure adjustment chamber, 20...winding shaft, 21...die, 22...backup roller, 23...air inlet, 23a...damper, 24...exhaust port, 24a...damper, 25a... atmospheric pressure sensor, 25b... atmospheric pressure sensor, 29... partition wall, 30... conveying roller, 31... infrared irradiation device, 32a... blower device, 32b... suction device, 33... roller cooling device, 40... conveying roller, 41... nozzle, 41a... front outlet, 41b... rear outlet, 42... suction port, 43... exhaust chamber, 44... air supply chamber, 45... air supply path, 50... winding shaft, 51... air intake port, 52... exhaust port, 60... control unit

In an embodiment, a perovskite film forming apparatus is provided for forming a perovskite film on a substrate to which a solution containing a perovskite precursor and a solvent has been applied, by crystallizing the perovskite precursor. The perovskite film forming apparatus includes zones through which the continuously transported substrate passes, including a solvent removal chamber in which the solution on the substrate is heated to a temperature at which the solvent evaporates but the perovskite precursor does not crystallize, thereby removing the solvent from the solution applied to the substrate without crystallizing the perovskite precursor, and a zone in which the perovskite precursor is heated to a crystallization temperature or higher on the substrate from which the solvent has been removed after passing through the solvent removal chamber, thereby crystallizing the perovskite precursor to form the perovskite film. a crystallization chamber , wherein the solvent and the perovskite precursor absorb different wavelengths of infrared light; the solvent removal chamber is provided with an infrared irradiator that irradiates the solution with infrared light of a specific wavelength that is absorbed by the solvent; the infrared irradiator irradiates the solution with infrared light of the specific wavelength and heats the solution to a temperature at which the solvent evaporates but the perovskite precursor does not crystallize, thereby evaporating and removing the solvent without crystallizing the perovskite precursor; the solvent removal chamber is provided with transport rollers that transport the substrate placed thereon, the transport rollers transport the substrate with the surface on which the solution has been applied facing up, and a roller cooling device that cools the transport rollers .

Furthermore, in a perovskite film formation method according to an embodiment, a solution containing a perovskite precursor and a solvent is applied to a substrate, and the perovskite precursor is crystallized to form a perovskite film, the method includes the steps of: heating the solution on the substrate to a temperature at which the solvent evaporates but the perovskite precursor does not crystallize, thereby removing the solvent from the solution applied to the substrate without crystallizing the perovskite precursor; and, after the solvent removal step, heating the perovskite precursor on the substrate from which the solvent has been removed to a crystallization temperature or higher to crystallize the perovskite precursor to form the perovskite film. and a step of forming a perovskite film , wherein the solvent and the perovskite precursor absorb different wavelengths of infrared light, and in the step of removing the solvent, an infrared irradiator irradiates the solution with infrared light of a specific wavelength that is absorbed by the solvent, thereby heating the solution and evaporating and removing the solvent without crystallizing the perovskite precursor, and the step of removing the solvent is performed while conveying the substrate on conveying rollers, and in the step of removing the solvent, the conveying rollers convey the substrate with the surface on which the solution has been applied facing up, and cool the substrate from the underside .

Claims (10)

1. A perovskite film forming apparatus for forming a perovskite film by crystallizing a solution containing a perovskite precursor and a solvent on a substrate to which the perovskite precursor has been applied, the apparatus comprising:
As a zone through which the continuously conveyed substrate passes,
a solvent removal chamber, which is an area in which the solution on the substrate is heated to a temperature at which the solvent evaporates and the perovskite precursor does not crystallize, thereby removing the solvent from the solution applied to the substrate without crystallizing the perovskite precursor;
a crystallization chamber, which is a zone in which the perovskite precursor is crystallized by heating the perovskite precursor to a crystallization temperature or higher on the substrate from which the solvent has been removed after passing through the solvent removal chamber to form the perovskite film;
A perovskite film forming apparatus comprising: an unwinding unit that unwinds the substrate before the solution is applied, an application chamber that applies the solution to the substrate, and a winding unit that winds up the substrate on which the perovskite film has been formed,
The solvent removal chamber and the crystallization chamber are provided in this order as a section provided between the coating chamber and the winding section.
The perovskite film forming apparatus according to claim 1 . the solvent and the perovskite precursor absorb different wavelengths of infrared light,
an infrared irradiation device that irradiates the solvent removal chamber with infrared light of a specific wavelength that is absorbed by the solvent;
the infrared irradiation device irradiates the solution with infrared light of the specific wavelength, and heats the solution at a temperature at which the solvent evaporates but the perovskite precursor does not crystallize, thereby evaporating and removing the solvent without crystallizing the perovskite precursor;
The perovskite film forming apparatus according to claim 1 or 2. a conveying roller for conveying the substrate thereon is provided in the solvent removal chamber;
the conveying roller conveys the substrate with the surface on which the solution is applied facing up;
a roller cooling device for cooling the conveying roller is provided;
The perovskite film forming apparatus according to claim 3 . a conveying roller that conveys the substrate to the solvent removal chamber with the substrate thereon;
a straightening device that sends air in the same direction as the conveying direction of the base material above the conveying roller;
The perovskite film forming apparatus according to claim 1 or 2. In the crystallization chamber, hot air is blown from a plurality of nozzles to heat the perovskite precursor from which the solvent has been removed to a crystallization temperature or higher, thereby crystallizing the perovskite precursor.
The perovskite film forming apparatus according to claim 1 or 2. In the crystallization chamber, a plurality of the nozzles each having a hot air outlet are arranged in a front-rear direction,
An air inlet is provided between adjacent nozzles.
The perovskite film forming apparatus according to claim 6. a pressure adjustment chamber is provided between the solvent removal chamber and the crystallization chamber;
The intake and exhaust of the pressure adjustment chamber are controlled so as to eliminate the difference in air pressure between the solvent removal chamber and the crystallization chamber.
The perovskite film forming apparatus according to claim 1 or 2. an annealing chamber is provided as a zone where the substrate reaches after passing through the crystallization chamber;
The temperature of the annealing chamber is lower than the temperature of the crystallization chamber and higher than room temperature.
The perovskite film forming apparatus according to claim 1 or 2. A method for forming a perovskite film, comprising: applying a solution containing a perovskite precursor and a solvent to a substrate; and crystallizing the perovskite precursor on the substrate to form a perovskite film,
heating the solution on the substrate to a temperature at which the solvent evaporates and the perovskite precursor does not crystallize, thereby removing the solvent from the solution applied to the substrate without crystallizing the perovskite precursor;
After the step of removing the solvent, a step of heating the perovskite precursor on the substrate from which the solvent has been removed to a crystallization temperature or higher to crystallize the perovskite precursor into the perovskite film;
A method for forming a perovskite film, comprising: