JP2024000868A - Foreign matter removal device - Google Patents

Abstract

An object of the present invention is to provide a foreign matter removal device that prevents wafers from being damaged by gas supply. A foreign matter removing device 1 removes foreign matter from one surface of a wafer 200 held by a first holding section 35 and a second holding section 38, and the foreign matter removing device 1 removes foreign objects from one surface of a wafer 200 that is , a gas supply unit 10 that forms a gap with one surface and supplies gas to the gap, and a first holding part 35, a second holding part 38, and a gas supply unit 10 in the surface direction of the wafer 200. , and a first moving unit 36 and a second moving unit 39 that relatively move the wafers 200 , and when the gas passes through the gap, the flow rate of the gas is increased and the pressure in the gap is lowered. It removes foreign matter from surfaces. [Selection diagram] Figure 1

Description

The present invention relates to a foreign matter removal device that removes foreign matter from a wafer.

BACKGROUND ART In order to remove foreign matter attached to a wafer held by a holding pad, it is known to blow a gas such as air onto the wafer (for example, see Patent Document 1).

JP2022-032728A

However, when blowing air onto a wafer, the blowing of the gas applies local force to the wafer, causing deformation such as warping, which may cause the wafer to break.

The present invention has been made in view of these problems, and its purpose is to provide a foreign matter removal device that prevents wafers from being damaged by gas supply.

In order to solve the above-mentioned problems and achieve the objects, the foreign matter removal device of the present invention is a foreign matter removal device that removes foreign matter from one side of a wafer held by a holding section, and which removes foreign matter from one side of the wafer. A gas supply unit that faces the surface and supplies gas to the gap by forming a gap with the one surface, and the holding section and the gas supply unit relative to each other in the direction of the surface of the wafer. and a moving unit that moves the gas through the gap to increase the flow rate of the gas and lower the pressure in the gap to remove foreign matter from the one surface of the wafer. .

The gas supply unit has one or more gas supply holes, the gas supply holes are arranged in a first direction, and the moving unit has one or more gas supply holes arranged in a second direction intersecting the first direction. You may move the section.

The gas supply unit may further include one or more suction holes.

The gas supply unit may be installed on a movement path along which the wafer is transported by the holding section.

The holding section transports the wafer from the wafer storage section to the holding table, and the gas supply unit is installed between the wafer storage section and the holding table, and supplies gas before holding the wafer on the holding table. may be supplied.

The gas supply unit may inject ionized air to neutralize the wafer.

The present invention uses a gas supply unit to remove foreign matter attached to one side of a wafer with gas, and at the same time generates a venturi effect in the gap formed between the one side of the wafer and the gas supply unit. , it is possible to prevent damage to the wafer due to the supply of gas. Further, the present invention provides that the gas supply unit has one or more gas supply holes, the gas supply holes are arranged in a first direction, and the moving unit has a holding part in a second direction intersecting the first direction. In order to move the wafer, it extends in the first direction on one side of the wafer and forms an area facing the gas supply unit, so by forming a stable gas flow in the gap, the wafer can be moved in the first direction. Foreign matter adhering to the entire surface can be efficiently removed, and a venturi effect can be stably generated in the gaps. Further, in the present invention, since the gas supply unit further has one or more suction holes, the foreign matter removed by the gas flow can be sucked, and the flow of gas formed in the gap can be accelerated. Furthermore, since the gas supply unit is installed on the movement path along which the wafer is transported by the holding section, the present invention does not require any particular change in the layout of each component of the processing device, and the wafer is transported by the processing device. It can be suitably incorporated without particularly changing the processing. Further, in the present invention, the holding section transports the wafer from the wafer storage section to the holding table, and the gas supply unit is installed between the wafer storage section and the holding table to supply gas before holding the wafer on the holding table. Therefore, it is possible to suppress the possibility of foreign matter being caught between the holding table and the wafer, and further prevent damage such as breakage of the wafer due to processing in the processing unit. Furthermore, in the present invention, the gas supply unit injects ionized air as a gas and eliminates static electricity from the wafer with the ionized air, thereby suppressing deterioration in processing quality (processing quality) of the processing unit caused by charging of the wafer. can.

FIG. 1 is a perspective view showing a configuration example of a processing device incorporating a foreign matter removing device according to an embodiment. FIG. 2 is a perspective view showing an example of the configuration of a gas supply unit in the foreign matter removal device of FIG. 1. FIG. 3 is a top view showing the gas supply unit of FIG. 2. FIG. 4 is a side view showing the gas supply unit of FIG. 2. FIG. FIG. 5 is a sectional view illustrating the gas supply unit of FIG. 2. FIG. 6 is a perspective view illustrating the gas supply unit of FIG. 2. FIG. 7 is a perspective view illustrating the gas supply unit of FIG. 2. FIG. 8 is a perspective view illustrating the gas supply unit of FIG. 2. FIG. 9 is a cross-sectional view showing a configuration example of a gas supply unit in a foreign matter removal device according to a modification.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Modes (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Further, the constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. Further, various omissions, substitutions, or changes in the configuration can be made without departing from the gist of the present invention.

[Embodiment]
A foreign matter removal device 1 according to an embodiment of the present invention will be described based on the drawings. FIG. 1 is a perspective view showing a configuration example of a processing device 100 in which a foreign matter removing device 1 according to an embodiment is incorporated. The foreign matter removal device 1 according to the embodiment is incorporated into a processing device 100, as shown in FIG. As shown in FIG. 1, the processing apparatus 100 includes a holding table 110, a processing unit 120, an X-axis movement unit 131, a Y-axis movement unit 132, a Z-axis movement unit 133, and a wafer storage section mounting table 140. , a foreign matter removing device 1, a cleaning unit 150, and a control section 160.

As shown in FIG. 1, the wafer 200 that is the target of foreign matter removal by the foreign matter removal apparatus 1 according to the embodiment and the processing target of the processing apparatus 100 in which the foreign matter removal apparatus 1 is incorporated is, for example, silicon, sapphire, silicon carbide, etc. These include disk-shaped semiconductor wafers and optical device wafers that have base materials such as (SiC), gallium arsenide, and glass. As shown in FIG. 1, the wafer 200 has chip-sized devices 203 formed in regions defined by a plurality of dividing lines 202 formed in a grid pattern on a flat surface 201. In the present embodiment, as shown in FIG. 1, the wafer 200 has an adhesive tape 205 attached to the back surface 204 on the back side of the front surface 201, and an annular frame 206 is attached to the outer edge of the adhesive tape 205. The present invention is not limited to this.

In this embodiment, the holding table 110 is a so-called chuck table, and includes a disc-shaped frame in which a recess is formed, and a disc-shaped suction part fitted into the recess. The suction part of the holding table 110 has a porous part made of porous ceramic or the like having a large number of porous holes, and is connected to a vacuum suction source (not shown) via a vacuum suction path (not shown). The upper surface of the suction section of the holding table 110 is a holding surface 111 on which the wafer 200 is placed and which suctions and holds the placed wafer 200 by negative pressure introduced from a vacuum suction source. In the present embodiment, the holding surface 111 has the wafer 200 placed thereon with the front surface 201 facing upward, and holds the placed wafer 200 by suction from the back surface 204 side via the adhesive tape 205 . The holding surface 111 and the upper surface of the frame of the holding table 110 are arranged on the same plane, and are formed parallel to the XY plane, which is a horizontal plane. The holding table 110 is provided movably in the X-axis direction parallel to the horizontal direction by an X-axis moving unit 131, and is moved in the Z-axis direction perpendicular to the horizontal plane (XY plane) and parallel to the vertical direction by a rotational drive source (not shown). It is rotatably provided around the axis.

The processing unit 120 processes the wafer 200 held on the holding table 110. In this embodiment, the processing unit 120 is a cutting unit that includes a spindle having a cutting blade attached to its tip and performs a cutting process on the wafer 200 held on the holding table 110, as shown in FIG. The processing unit 120 is provided movably in the Y-axis direction parallel to the horizontal direction and perpendicular to the X-axis direction by a Y-axis movement unit 132, and is provided movably in the Z-axis direction by a Z-axis movement unit 133. ing.

The processing unit 120 divides the wafer 200 held on the holding table 110 by rotating the cutting blade attached to the tip of the spindle around an axis parallel to the Y-axis direction due to the rotational movement of the spindle. Cutting is performed along the planned line 202. As shown in FIG. 1, the processing apparatus 100 is a so-called facing dual type processing apparatus (cutting apparatus) that includes two sets of processing units 120 (cutting units), that is, a two-spindle dicer.

The wafer accommodating part mounting table 140 is a mount table on which a wafer accommodating part 145, which is a container for accommodating the wafer 200, is placed, and moves the mounted wafer accommodating part 145 up and down in the Z-axis direction.

The cleaning unit 150 includes a holding table 151 and a cleaning nozzle (not shown), and performs a cleaning process to clean the front surface 201 side of the wafer 200 held on the holding table 151. In this embodiment, the holding table 151 is a so-called spinner table that includes a frame body and a suction section like the holding table 110, and the top surface of the suction section of the holding table 151 is used to attach the wafer 200 placed thereon from the back surface 204 side. It serves as a holding surface 152 that is suctioned and held via the tape 205. The holding table 151 is provided movably in the Z-axis direction by a plurality of air cylinders (not shown), and is provided rotatably around the Z-axis by a motor (not shown) connected below. A cleaning nozzle (not shown) supplies cleaning water such as pure water, air, a mixed fluid containing cleaning water and air, etc. to the wafer 200 held on the holding table 151.

The cleaning unit 150 holds the wafer 200 on the holding surface 152 of the holding table 151, and supplies cleaning water, air, etc. to the wafer 200 on the holding table 151 using a cleaning nozzle (not shown) while rotating the holding table 151. As a result, the surface 201 side of the wafer 200 is cleaned, and a cleaning process is performed to remove foreign matter adhering to the surface 201 side of the wafer 200.

The foreign matter removal device 1 includes a gas supply unit 10, a transport unit 30, and a control section 40, as shown in FIG. The transport unit 30 transports the wafer 200 between the wafer accommodating part 145 placed on the wafer accommodating part mounting table 140, the holding table 110, and the holding table 151. In this embodiment, the transport unit 30 includes a first transport unit 31, a second transport unit 32, and a pair of guide rails 33, as shown in FIG.

The first transport unit 31 includes a first holding section 35 and a first moving unit 36. As shown in FIG. 1, the first transport unit 31 is provided in front of the loading/unloading section for loading and unloading the wafer 200 of the wafer housing section 145 placed on the wafer housing section mounting table 140. In this embodiment, the first holding section 35 is, for example, a clip that holds and holds the portion of the frame 206 attached to the wafer 200 on the loading/unloading section side from the +Y direction. The first moving unit 36 supports the first holding section 35 so as to be movable along the Y-axis direction, which is the loading/unloading direction.

The first transport unit 31 holds the frame 206 attached to the wafer 200 using the first holding section 35, and moves the first holding section 35 holding the frame 206 along the Y-axis direction using the first moving unit 36. As a result, the wafer 200 is transported between the inside of the wafer accommodating part 145 placed on the wafer accommodating part mounting table 140 and the pair of guide rails 33 provided in front of the loading/unloading section of the wafer accommodating part 145. .

The second transport unit 32 includes a second holding section 38 and a second moving unit 39. As shown in FIG. 1, the second transport unit 32 is provided between a pair of guide rails 33, the holding table 110, and the holding table 151 of the cleaning unit 150. In this embodiment, the second holding section 38 is, for example, a suction pad that suction-holds the upper surface of the frame 206 attached to the wafer 200 from above (+Z direction). The second moving unit 39 supports the second holding part 38 so as to be movable along the Y-axis direction and the Z-axis direction.

The second transport unit 32 holds the frame 206 attached to the wafer 200 with a second holding part 38, and moves the second holding part 38 holding the frame 206 with the second moving unit 39 in the Y-axis direction and the Z-axis direction. By moving the wafer 200 along the cleaning unit 150, the wafer 200 is transported between the pair of guide rails 33, the holding table 110, and the holding table 151 of the cleaning unit 150.

In this way, the transport unit 30 transports the wafer 200 from the wafer storage section 145 to the holding table 110 or the holding table 151 via the pair of guide rails 33 using the first transport unit 31 and the second transport unit 32. . Note that in this embodiment, the first holding section 35 and the second holding section 38 of the transport unit 30 hold the wafer 200 with a clip or a suction pad, but the present invention is not limited to this, and for example, The wafer 200 may be held in a non-contact manner by generating an air flow in the surface direction of the wafer 200 according to Bernoulli's law, or the wafer 200 may be placed on a plate with suction holes and held.

FIG. 2 is a perspective view showing an example of the configuration of the gas supply unit 10 in the foreign matter removing apparatus 1 of FIG. 1. As shown in FIG. FIG. 3 is a top view showing the gas supply unit 10 of FIG. 2. FIG. 4 is a side view showing the gas supply unit 10 of FIG. 2. As shown in FIGS. 2, 3, and 4, the gas supply unit 10 includes a rod-shaped unit body 11 extending in a first direction 301, a gas supply source 12, a suction source 13, and a position adjustment section 14. , is provided.

The unit main body 11 has a flat surface 21 extending outwardly along a first direction 301 . In the unit body 11, a direction that intersects the first direction 301 (orthogonal in this embodiment) and is parallel to the plane 21 is referred to as a second direction 302, and a direction orthogonal to the plane 21 is referred to as a third direction 303. . The length of the plane 21 in the second direction 302 is sufficiently shorter than the size (diameter) of the wafer 200. Since the unit main body 11 does not have a portion that protrudes outward in the third direction 303 (upward in FIG. 4) beyond the plane 21, The plane 21 is accessible.

As shown in FIGS. 2, 3 and 4, the unit main body 11 includes gas supply grooves 22 extending along the first direction 301 at positions facing each other in the second direction 302 via the plane 21; A suction groove 23 extending along the first direction 301 is formed. The side surface 24 of the gas supply groove 22 on the plane 21 side and the side surface 25 of the suction groove 23 on the plane 21 side both move toward the plane 21 from the groove bottom along the second direction 302, and then move toward the third direction. 303 is inclined toward the outside. Specifically, both the gas supply groove 22 and the suction groove 23 are formed in a V-shape when viewed from the first direction 301.

As shown in FIGS. 2 and 4, the unit body 11 has a cylindrical gas supply passage 26 extending along a first direction 301 inside the plane 21 on the side where the gas supply groove 22 is formed. A cylindrical suction path 27 extending along the first direction 301 is formed inside the plane 21 on the side where the suction groove 23 is formed. The gas supply path 26 is connected to the gas supply source 12, and gas 400 (see FIG. 5) is supplied from the gas supply source 12. The suction path 27 is connected to the suction source 13, and negative pressure is introduced from the suction source 13.

As shown in FIGS. 2, 3 and 4, the unit main body 11 has one or more (five in the form shown in FIGS. 2 to 4) gas supply holes 28, and one or more (in the form shown in FIGS. The form shown in FIG. 4 has five suction holes 29. A plurality of gas supply holes 28 are formed inside the unit main body 11, and each of them communicates between the gas supply groove 22 and the gas supply path 26. Each of the gas supply holes 28 supplies the gas 400 supplied to the gas supply path 26 toward the gas supply groove 22 . The plurality of gas supply holes 28 are arranged at equal intervals along the first direction 301. By making the diameter of the gas supply hole 28 smaller than that of the suction hole 29, the flow rate of the gas 400 supplied from the gas supply path 26 toward the gas supply groove 22 is increased. ) can increase the flow rate of gas 400 passing through. A plurality of suction holes 29 are formed inside the unit main body 11, and all of them communicate between the suction groove 23 and the suction path 27. Each of the suction holes 29 introduces the negative pressure introduced into the suction path 27 into the suction groove 23 . The plurality of suction holes 29 are arranged at equal intervals along the first direction 301. The plurality of gas supply holes 28 and the plurality of suction holes 29 are formed in the same number, and are formed at positions facing each other in the second direction 302 with the plane 21 interposed therebetween. By making the diameter of the suction hole 29 larger than that of the gas supply hole 28, the suction force through the suction path 27 is increased, and thereby the flow rate of the gas 400 passing through the gap 19 can be increased.

Gas supply source 12 introduces gas 400 into gas supply path 26 . The gas 400 supplied by the gas supply source 12 may be any gas, such as compressed air or nitrogen, as long as it does not adversely affect the wafer 200, the adhesive tape 205, the frame 206, and the like. Ionized air may be used as the gas 400 supplied by the gas supply source 12, and in this case, the wafer 200, the adhesive tape 205, the frame 206, etc. can be neutralized by the ionized air. The suction source 13 sucks the inside of the suction path 27 and introduces negative pressure into the suction path 27 . The position adjustment section 14 has a moving mechanism including a cylinder, a ball screw, and a motor (not shown), and is connected to the unit body 11. By moving the unit body 11 along the third direction 303, the position adjustment section 14 moves the unit. The position of the main body 11 in the third direction 303 is adjusted.

FIG. 5 is a sectional view illustrating the gas supply unit 10 of FIG. 2. As shown in FIG. As shown in FIG. 5, in the gas supply unit 10, one surface of the wafer 200 faces the plane 21 of the unit body 11, and there is a space between the opposing region (opposing region) of the one surface. When a slight gap 19 with a distance (interval) of 18 is formed, the gas 400 supplied from the gas supply source 12 passes through the gap 19 via the gas supply path 26, the gas supply hole 28, and the gas supply groove 22. , and is further sucked into the suction source 13 via the suction groove 23, the suction hole 29, and the suction path 27. Here, one surface of the wafer 200 that faces the plane 21 of the unit main body 11 is one surface of the wafer 200 from which foreign matter is removed by the foreign matter removal apparatus 1, and in this embodiment, various processes of the wafer 200 are performed. This is a back surface 209 that is the back surface of the adhesive tape 205 attached to the back surface 204 on the opposite side to the surface 201 to be applied. The gap 19 has a smaller cross-sectional area as a flow path for the gas 400 supplied from the gas supply source 12 than the gas supply groove 22 and the suction groove 23 . Therefore, when the gas 400 is supplied from the gas supply source 12 to the gap 19, a Venturi effect occurs, and a pressure lower than that in the gas supply groove 22 and the suction groove 23 is generated in the gap 19 where the cross-sectional area of the flow path is small. be able to. That is, by supplying the gas 400 from the gas supply source 12 to the gap 19, the gas 400 passes through the gap 19, thereby increasing the flow rate of the gas 400 more than the gas supply groove 22 and the suction groove 23, and increasing the flow rate of the gas 400 into the gap 19. pressure can be lowered.

In this embodiment, the preferable distance 18 of the gap 19 where the Venturi effect occurs in the gap 19 is, for example, greater than 0 mm and less than or equal to 4 mm, and preferably greater than 0 mm and less than or equal to 2 mm. In this case, the wafer 200 is pulled to a position where it almost contacts the flat surface 21 of the unit body 11 when it faces the flat surface 21. On the other hand, if the distance 18 is too large, the difference in position in the thickness direction between the region of the wafer 200 that is pulled by the unit body 11 and other regions becomes large, which may cause a load to be applied to the wafer 200. be. When the distance 18 is 4 mm or less, the load applied to the wafer 200 can be sufficiently suppressed, and when the distance 18 is 2 mm or less, the load applied to the wafer 200 can be suppressed more sufficiently.

Further, in this embodiment, the preferred flow velocity of the gas 400 at which the Venturi effect occurs in the gap 19 is 5 m/s or more and 400 m/s or less. In this case, when the wafer 200 faces the flat surface 21 of the unit body 11, it can be pulled toward the flat surface 21 with appropriate strength. On the other hand, if the flow velocity of the gas 400 passing through the gap 19 is less than 5 m/s, the Venturi effect will not be sufficiently generated, and there is a possibility that the wafer 200 will not be pulled with sufficient strength toward the unit main body 11. be. When the flow velocity of the gas 400 passing through the gap 19 exceeds 400 m/s, the force pulling the wafer 200 becomes too strong, causing local damage to the area of the wafer 200 facing the plane 21 of the unit body 11. There is a risk that a strong load (gravitational force) will be applied. Note that the preferable range of the flow velocity of the gas 400 in which the Venturi effect occurs in the gap 19 changes depending on the strength caused by the material, thickness, etc. of the wafer 200.

The unit main body 11 of the gas supply unit 10 is installed on the movement path along which the wafer 200 is transported by the transport unit 30. The unit main body 11 has a flat surface 21 facing the movement path of the wafer 200, and has a connection between the flat surface 21 and one surface (in this embodiment, the back surface 209) from which foreign matter is removed from the wafer 200 passing through the movement path. They are installed at positions separated by a distance of 18 between them. In this embodiment, the unit main body 11 is provided between the wafer accommodating section 145 placed on the wafer accommodating section mounting table 140 and the holding table 110, more specifically, as shown in FIG. 145 and the top of the pair of guide rails 33. Note that the unit main body 11 is not limited to this in the present invention, and may be installed, for example, between the holding table 110 and the holding table 151 of the cleaning unit 150, or may be installed between the holding table 151 of the cleaning unit 150, It may be installed between the pair of guide rails 33.

In this embodiment, the unit main body 11 has a first direction 301 parallel to the X-axis direction of the processing device 100 and a second direction 302 parallel to the Y-axis direction of the processing device 100, as shown in FIG. , the third direction 303 is parallel to the Z-axis direction of the processing apparatus 100, the plane 21 is oriented in the +Z direction (upward) of the processing apparatus 100, and the distance 18 is in the -Z direction (downward) from the movement path of the wafer 200. are placed at a distance apart. Furthermore, the unit main body 11 is moved along the Z-axis direction by the position adjustment section 14, and is moved between the plane 21 and one surface (the back surface 209 in this embodiment) of the wafer 200 passing through the movement path from which foreign matter is removed. The position is adjusted to a position separated by a distance of 18 between. In the present embodiment, the gas supply unit 10 has a unit main body 11 installed below the moving path of the wafer 200 and supplies the gas 400 to the wafer 200 from below, but the present invention is limited to this. Alternatively, the unit main body 11 may be installed above the moving path of the wafer 200, and the gas 400 may be supplied to the wafer 200 from above.

The control unit 40 controls the operation of each component of the foreign matter removal apparatus 1 and causes the foreign matter removal apparatus 1 to perform foreign matter removal processing on one surface of the wafer 200 (the back surface 209 in this embodiment). Further, the control section 160 controls the operation of each component of the processing apparatus 100 except for the foreign matter removing apparatus 1, and causes the processing apparatus 100 to perform various processes on the wafer 200 together with the control section 40. In this embodiment, the control units 40 and 160 both include a computer system. The computer systems included in the control units 40 and 160 each include an arithmetic processing unit having a microprocessor such as a CPU (Central Processing Unit), and a memory such as a ROM (Read Only Memory) or a RAM (Random Access Memory). and an input/output interface device. The arithmetic processing units of the control units 40 and 160 perform arithmetic processing according to computer programs stored in the storage devices of the control units 40 and 160, respectively, to control the foreign object removal device 1 and the processing device 100. The signal is output to each component of the foreign object removal device 1 and the processing device 100 via the input/output interface device of the control units 40 and 160. Note that the control sections 40 and 160 may constitute an integrated control unit and may include an integrated computer system.

6, 7, and 8 are all perspective views illustrating the gas supply unit 10 of FIG. 2. An example of the operation process of the processing device 100 incorporating the foreign matter removal device 1 of the embodiment will be described. The foreign matter removing apparatus 1 first holds the wafer 200 in the wafer accommodating part 145 placed on the wafer accommodating part mounting table 140 by the first holding part 35 of the first transport unit 31, and then by the first moving unit 36, The wafer 200 held by the first holding part 35 is moved from the wafer storage part 145 toward the pair of guide rails 33 along the Y-axis direction (second direction 302).

The first moving unit 36 of the first transport unit 31 connects the first holding part 35 that holds the wafer 200 and the unit body 11 of the gas supply unit 10 to the back surface 209 of the adhesive tape 205 attached to the wafer 200. The units are moved relatively along the surface direction of the wafer 200 while approaching the plane 21 of the unit body 11 to a position separated by a distance 18 from each other. As a result, the foreign matter removing device 1 allows the wafer 200 held by the first holding section 35 to pass over the flat surface 21 of the unit body 11 of the gas supply unit 10, as shown in FIGS. 6, 7, and 8, for example. Then, the back surface 209 of the adhesive tape 205 attached to the wafer 200 and the plane 21 are made to face each other in the Z-axis direction (third direction 303), and the The opposing region extending along the axial direction (first direction 301) is moved along the Y-axis direction (second direction 302), and the entire surface of the back surface 209 of the wafer 200 is sequentially passed over the plane 21. At this time, as shown in FIG. As a result, gas 400 is supplied toward the gap 19 thus formed. The foreign matter removal device 1 further sucks the gas 400 in the suction path 27 using the suction source 13 . As a result, the foreign matter removal device 1 controls the gas supply path 26 , the gas supply hole 28 , the gas supply groove 22 , the gap 19 , the suction groove 23 , the suction hole 29 , and the suction path 27 with respect to the gas 400 supplied toward the gap 19 . A stream of gas 400 can be formed that passes in sequence.

The foreign matter removing device 1 uses the flow of the formed gas 400 to remove foreign matter adhering to the area of the back surface 209 facing the plane 21. Then, the foreign matter removing apparatus 1 performs a foreign matter removal process on the entire back surface 209 of the wafer 200 by passing the entire surface of the back surface 209 of the wafer 200 over the plane 21 one after another. Further, the foreign matter removing device 1 may remove not only foreign matter but also machining water that has adhered after processing by using the flow of the gas 400.

Further, the foreign matter removing device 1 generates a Venturi effect by the flow of the formed gas 400, and generates a lower pressure in the gap 19 than in the gas supply groove 22 and the suction groove 23, thereby removing the wafer 200 from the unit body. 11 side to suppress local force from being applied to the back surface 209 side of the wafer 200, thereby suppressing deformation of the wafer 200 such as convex warping on the front surface 201, and This can prevent damage such as cracking caused by such deformation.

Note that when the unit main body 11 is installed between the holding table 110 and the holding table 151 of the cleaning unit 150, the foreign matter removing device 1 uses the second holding part 38 of the second conveying unit 32 to By holding the wafer 200 of When moving the wafer 200 held by the second holding part 38 from the holding table 110 toward the holding table 151 of the cleaning unit 150 along the Y-axis direction (second direction 302), the gas 400 As a result, foreign matter adhering to the area of the back surface 209 facing the plane 21 can be removed, and the Venturi effect can be generated to prevent damage such as cracking of the wafer 200.

Furthermore, when the unit main body 11 is installed between the holding table 151 of the cleaning unit 150 and the pair of guide rails 33, the foreign matter removing device 1 can be cleaned by the second holding part 38 of the second conveyance unit 32. The wafer 200 held on the holding table 151 of the unit 150 is held, and the second moving unit 39 moves the wafer 200 held by the second holding part 38 from the holding table 151 of the cleaning unit 150 onto the pair of guide rails 33. When moving along the axial direction (second direction 302), in the same way as described above, the gas 400 removes foreign matter attached to the area facing the plane 21 of the back surface 209, and generates a Venturi effect. Damage such as cracking of the wafer 200 can be prevented.

The foreign matter removal device 1 according to the embodiment having the above configuration uses the gas 400 by the gas supply unit 10 to remove the adhesive stuck to the wafer 200 held by the first holding part 35 and the second holding part 38. To generate a Venturi effect in the gap 19 formed between the back surface 209 of the wafer 200 and the flat surface 21 of the unit body 11 of the gas supply unit 10 while removing foreign matter attached to the back surface 209 side of the tape 205 from the back surface 209. This provides the effect of preventing damage to the wafer 200 due to the supply of the gas 400.

Further, in the foreign matter removal device 1 according to the embodiment, the gas supply unit 10 has one or more gas supply holes 28, the gas supply holes 28 are arranged in the first direction 301, the first moving unit 36, the first The second moving unit 39 moves the first holding section 35 and the second holding section 38 in a second direction 302 intersecting the first direction 301. For this reason, the foreign matter removal device 1 according to the embodiment extends in the direction intersecting the transport direction on the back surface 209 of the wafer 200 and forms an area facing the plane 21, so that the gas 400 can stably flow into the gap 19. By forming this, foreign matter adhering to the entire surface of the back surface 209 of the wafer 200 can be efficiently removed, and a venturi effect can be stably generated in the gap 19.

Further, in the foreign matter removal device 1 according to the embodiment, since the gas supply unit 10 further has one or more suction holes 29, the foreign matter removed by the flow of the gas 400 can be sucked, and the gas 400 formed in the gap 19 can be sucked. It can speed up the flow.

Further, in the foreign matter removal apparatus 1 according to the embodiment, the gas supply unit 10 is installed on the movement path on which the wafer 200 is conveyed by the first holding part 35 and the second holding part 38, so each configuration of the processing apparatus 100 is It can be suitably incorporated without particularly changing the layout of the elements (each unit) and without changing the transport process of the wafer 200 by the processing apparatus 100.

Further, in the foreign matter removal apparatus 1 according to the embodiment, the first holding section 35 transports the wafer 200 from the wafer storage section 145 to the holding table 110, and the gas supply unit 10 is arranged between the wafer storage section 145 and the holding table 110. Since the gas 400 is supplied before the wafer 200 is held by the holding table 110, the possibility of foreign matter being caught between the holding table 110 and the wafer 200 is suppressed, and the wafer is It is possible to further prevent damage such as breakage of 200 from occurring. In the foreign matter removal apparatus 1 according to the embodiment, the gas supply unit 10 is installed between the holding table 110 and the holding table 151 of the cleaning unit 150, and the gas 400 is supplied before the holding table 151 holds the wafer 200. In this case, it is possible to suppress the possibility of foreign matter being caught between the holding table 151 and the wafer 200, and further prevent damage such as breakage of the wafer 200 due to the cleaning process of the cleaning unit 150.

Further, in the foreign matter removing apparatus 1 according to the embodiment, the gas supply unit 10 injects ionized air as the gas 400 and eliminates static electricity from the wafer 200 with the ionized air. deterioration of processing quality (processing quality) can be suppressed. Further, the foreign matter removing apparatus 1 according to the embodiment can generate a Venturi effect in the gap 19 even when it is necessary to increase the air volume and wind speed of ionized air in order to improve the efficiency of static elimination of the wafer 200. It is possible to prevent damage to the wafer 200 due to the supply of .

[Modified example]
A foreign matter removing device 1 according to a modification of the present invention will be described based on the drawings. FIG. 9 is a cross-sectional view showing an example of the configuration of the gas supply unit 10-2 in the foreign matter removal device 1 according to a modification. In FIG. 9, the same parts as those in the embodiment are given the same reference numerals, and the description thereof will be omitted.

In the foreign matter removal device 1 according to the modification, the gas supply unit 10 in the above-described embodiment is changed to a gas supply unit 10-2. As shown in FIG. 9, the gas supply unit 10-2 is the same as the gas supply unit 10 except that the unit main body 11 is replaced with a unit main body 11-2 and the suction source 13 is omitted. The unit body 11-2 is the unit body 11 in which the suction groove 23 having the side surface 25, the suction path 27, and the suction hole 29 are omitted. The other configurations of the modified example are the same as those of the above-described embodiment.

In the foreign matter removal device 1 according to such a modification, in the above-described embodiment, the flow path (suction groove 23, suction hole 29, suction path 27) after the gap 19 of the gas 400 supplied toward the gap 19 is omitted. It becomes what is given. For this reason, the foreign matter removal device 1 according to the modification example removes foreign matter adhering to the area facing the plane 21 of the back surface 209 using the gas 400, and generates the Venturi effect to remove the foreign matter from the gas 400. It is possible to prevent damage such as cracking of the wafer 200 due to the supply of the wafer 400. The foreign matter removing device 1 according to the modified example has the same effects as the above-described embodiment, except for the effects provided by the suction groove 23, the suction hole 29, and the suction path 27.

Note that the present invention is not limited to the above embodiments. That is, various modifications can be made without departing from the gist of the invention. In the embodiment and each modification described above, in the foreign matter removing device 1, the processing unit 120 of the incorporated processing device 100 is a cutting unit that performs a cutting process, and the cleaning unit 150 is a unit that performs a cleaning process. , the present invention is not limited to these, but includes a grinding unit that grinds the wafer 200, a polishing unit that polishes the wafer 200, a laser processing unit that irradiates the wafer 200 with a laser beam to perform laser processing, and a laser processing unit that applies plasma to the wafer 200. A plasma processing unit that performs plasma processing by irradiating the wafer, an adhering unit that performs a protective member installation process that adheres a protective member to the wafer 200, an ultraviolet irradiation unit that irradiates the wafer 200 with ultraviolet rays, and performs the ultraviolet irradiation process. It may be incorporated into a processing device.

1 Foreign matter removal device 10, 10-2 Gas supply unit 19 Gap 28 Gas supply hole 29 Suction hole 30 Transport unit 35 First holding section 36 First moving unit 38 Second holding section 39 Second moving unit 110, 151 Holding table 145 Wafer storage section 200 Wafer 209 Back surface (corresponding to one surface according to the present invention)
301 First direction 302 Second direction 400 Gas

Claims (6)

A foreign matter removal device that removes foreign matter from one side of a wafer held by a holding section,
a gas supply unit that faces the one surface of the wafer, forms a gap with the one surface, and supplies gas to the gap;
a moving unit that relatively moves the holding section and the gas supply unit in the surface direction of the wafer,
A foreign matter removal device that removes foreign matter from the one surface of the wafer by increasing the flow rate of the gas and lowering the pressure in the gap by allowing the gas to pass through the gap. The gas supply unit has one or more gas supply holes,
the gas supply hole is arranged in a first direction;
The moving unit moves the holding part in a second direction intersecting the first direction.
The foreign matter removal device according to claim 1. 3. The foreign matter removal device according to claim 2, wherein the gas supply unit further has one or more suction holes. 2. The foreign matter removing apparatus according to claim 1, wherein the gas supply unit is installed on a moving path along which the wafer is transported by the holding section. The holding unit transports the wafer from the wafer storage unit to the holding table,
The foreign matter removal device according to claim 1, wherein the gas supply unit is installed between the wafer storage section and the holding table, and supplies the gas before holding the wafer on the holding table. . 2. The foreign matter removing apparatus according to claim 1, wherein the gas supply unit injects ionized air to eliminate static from the wafer.

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