JP2023138100A - vapor deposition mask - Google Patents

Abstract

To provide a vapor deposition mask having improved strength.SOLUTION: According to an embodiment, a vapor deposition mask includes: a mask body including a pattern region provided with an opening pattern and a peripheral region surrounding a periphery of the pattern region; a holding frame for supporting the mask body; and a connection part for connecting the mask body to the holding frame. The opening pattern includes a plurality of rectangular openings each having a long side extending in a first direction and a short side extending in a second direction orthogonal to the first direction. The plurality of openings include: a plurality of first openings; and a plurality of second openings provided between the first openings and the peripheral region in the second direction while being adjacent to the first openings, where a second distance spacing apart between the second openings adjacent to each other in the first direction is larger than a first distance spacing apart between the first openings adjacent to each other in the first direction.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a deposition mask.

In recent years, organic electroluminescent display devices (hereinafter referred to as organic EL display devices) using organic electroluminescent elements (hereinafter referred to as organic EL elements) as light emitting elements have been known. An organic EL element has an anode electrode, a cathode electrode, and a layer containing an organic electroluminescent material provided between these electrodes (hereinafter referred to as an "organic EL layer"). The organic EL layer includes functional layers such as a light emitting layer, an electron transport layer, and a hole transport layer. The organic EL element emits light by applying a voltage to each of the anode electrode and the cathode electrode to flow a current between the anode electrode and the cathode electrode.

For example, a vacuum evaporation method is used to form a light emitting layer of an organic EL element. The vacuum evaporation method is a method in which evaporation material is sublimated by heating it with a heater under vacuum, and the vaporized evaporation material is deposited (evaporated) on the surface of a substrate. By using the vacuum evaporation method, a thin film of the evaporation material can be formed on the surface of the substrate. Further, in the vacuum evaporation method, a high-definition thin film pattern can be formed by using a mask (evaporation mask) having a large number of fine opening patterns.

JP 2017-210633 Publication

The deposition mask is typically used as a deposition mask unit including one or more deposition masks, a support frame surrounding the one or more deposition masks, and a connection part connecting the one or more deposition masks and the support frame. . The vapor deposition mask is provided with an opening pattern corresponding to the pixel pattern. The aperture pattern includes a plurality of apertures. The openings are separated from adjacent openings by a predetermined distance.

The vapor deposition mask is formed by electroforming, for example, from a metal such as nickel (Ni), a nickel alloy such as nickel (Ni)-cobalt (Co), copper (Cu), titanium (Ti), or chromium (Cr). be able to. The deposition mask includes a pattern region provided with an opening pattern and a peripheral region surrounding the pattern region. Since the pattern area is provided with a plurality of openings, the rigidity of the pattern area is lower than the rigidity of the surrounding area where no openings are provided.

When the vapor deposition mask and the glass substrate are separated from each other at the end of the vapor deposition process, a pattern region with low rigidity may stick to the glass substrate due to film deposition or charging. In such a case, if the vapor deposition mask is used repeatedly, metal fatigue will occur due to load being applied to the pattern area with low rigidity, especially around the outermost opening pattern located at the border with the peripheral area with high rigidity. Wrinkles and distortions occur around the opening pattern. As a result, there are problems such as misalignment of pixels corresponding to the opening pattern on the outermost periphery, and so-called rib breakage in which the intervals between adjacent pixels collapse and the adjacent pixels come into contact with each other.

In view of the above problems, one embodiment of the present disclosure aims to provide a vapor deposition mask with improved strength.

A vapor deposition mask according to an embodiment of the present disclosure includes a mask body including a pattern area provided with an opening pattern, a peripheral area surrounding the pattern area, a holding frame supporting the mask body, and the mask body. and a connection portion connecting the holding frame, and the opening pattern includes a plurality of rectangular openings each having a long side extending in a first direction and a short side extending in a second direction orthogonal to the first direction. the plurality of openings include a plurality of first openings and a plurality of second openings adjacent to the first openings and provided between the first openings and a peripheral area in the second direction. A second distance separating second openings adjacent to each other in the first direction is greater than a first distance separating first openings adjacent to each other in the first direction.

A vapor deposition mask according to another embodiment of the present disclosure includes a mask body including a pattern area provided with an opening pattern, a peripheral area surrounding the pattern area, a holding frame supporting the mask body, and the mask body. a connecting portion connecting the main body and the holding frame, the pattern area includes a first area including a plurality of first openings, a second area including a plurality of second openings, and the pattern area includes a first area including a plurality of second openings; The opening has a rectangular shape having a long side extending in a first direction and a short side extending in a second direction perpendicular to the first direction, and the second opening has a long side extending in the first direction, the second region is adjacent to the first region and is provided between the peripheral region and the one region in the second direction; Among the plurality of second openings, a second distance separating second openings that are adjacent to the peripheral area and adjacent to each other in the first direction is a second distance that separates second openings that are adjacent to each other in the first direction. greater than 1 distance.

FIG. 1 is a schematic plan view of a vapor deposition mask unit according to an embodiment of the present disclosure. 2 is a cross-sectional view taken along A1-A2 shown in FIG. 1. FIG. FIG. 1 is a schematic plan view of a vapor deposition mask according to an embodiment of the present disclosure. 4 is an enlarged view showing area BA1 in FIG. 3. FIG. It is a figure explaining simulation concerning this embodiment. (a) It is a graph showing the amount of displacement in the z direction relative to the amount of displacement in the x direction of the mask body. (b) is a graph showing the rate of change in slope with respect to the amount of displacement of the mask body 110 in the x direction. FIG. 3 is a schematic plan view of a vapor deposition mask according to another embodiment of the present disclosure. 8 is an enlarged view showing area BA2 in FIG. 7. FIG. It is a schematic diagram which shows a part of vapor deposition mask of the modification of this indication.

Embodiments of the present invention will be described below with reference to the drawings and the like. However, the present invention can be implemented in many different modes, and should not be construed as being limited to the contents of the embodiments exemplified below. In order to make the explanation more clear, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual aspect, but this is only an example and does not limit the interpretation of the present invention. It's not a thing. In addition, in this specification and each figure, the same reference numerals (or numbers followed by a, b, A, B, etc.) are given to the same elements as those described above with respect to the existing figures, and detailed explanations are given. It may be omitted as appropriate. Furthermore, the characters ``first'' and ``second'' for each element are convenient signs used to distinguish each element, and have no further meaning unless otherwise specified.

In this specification, when a member or region is said to be "above (or below)" another member or region, it means that it is directly above (or directly below) the other member or region unless otherwise specified. This includes not only the case where the item is located above (or below) another member or area, that is, the case where another component is included in between above (or below) the other member or area. .

In addition, in this specification, "α includes A, B or C", "α includes any one of A, B and C", "α is one selected from the group consisting of A, B and C". Unless otherwise specified, the expression "including" does not exclude the case where α includes multiple combinations of A to C. Furthermore, these expressions do not exclude cases where α includes other elements.

[First embodiment]
The configuration of a vapor deposition mask according to an embodiment of the present disclosure will be described with reference to FIGS. 1 to 4.

FIG. 1 is a schematic plan view of a vapor deposition mask unit 100 according to an embodiment of the present disclosure. FIG. 2 is a cross-sectional structure taken along A1-A2 shown in FIG. The structure of the vapor deposition mask unit 100 shown in FIGS. 1 and 2 is an example, and the structure of the vapor deposition mask unit 100 is not limited to the structure shown in FIGS. 1 and 2.

As shown in FIG. 1, the vapor deposition mask unit 100 includes at least one vapor deposition mask 102, a holding frame 108 surrounding the at least one vapor deposition mask 102, and a connecting portion connecting the holding frame 108 and the at least one vapor deposition mask 102. 106 included. In the embodiment shown in FIG. 1, a vapor deposition mask unit 100 includes a plurality of vapor deposition masks 102. The plurality of vapor deposition masks 102 are each supported by a holding frame 108 via a connecting portion 106.

The inserted enlarged view in FIG. 1 shows a part of the vapor deposition mask 102. As shown in the inserted enlarged view of FIG. 1, the vapor deposition mask 102 has a plurality of openings 103. In the vapor deposition mask 102, a plurality of openings 103 are arranged within a predetermined pattern area to form one opening pattern 104. The vapor deposition mask 102 surrounds the pattern area, is connected to the connection part 106 in an area (peripheral area) where the opening pattern 104 is not formed, and is held by the holding frame 108 .

As shown in FIG. 2, the vapor deposition mask 102 is made of a plate-like member, and the plurality of openings 103 are through holes passing through the plate-like member. Although details will be described later, the vapor deposition mask 102 is formed using a metal material. A holding frame 108 is provided to support the vapor deposition mask 102 in a flat plate shape. In order to hold a plurality of vapor deposition masks 102, a grid-like frame may be provided in the holding frame 108. In the vapor deposition mask unit 100, the holding frame 108 corresponds to the size of the mother glass substrate, and the vapor deposition masks 102 are arranged corresponding to the individual display panels built into the mother glass substrate. The opening pattern 104 of the vapor deposition mask 102 is arranged corresponding to the display area of the display panel. The plurality of apertures 103 are arranged corresponding to the arrangement of pixels within the display panel.

The connecting portion 106 connects the vapor deposition mask 102 and the holding frame 108 and fixes them to each other. Therefore, although the holding frame 108 does not directly contact the vapor deposition mask 102, the connecting portion 106 contacts the vapor deposition mask 102 in the peripheral region of the vapor deposition mask 102 where the opening pattern 104 is not formed, and also contacts the side surface of the holding frame 108.

Although the vapor deposition mask unit 100 shown in FIGS. 1 and 2 shows a mode in which a plurality of vapor deposition masks 102 are held in the holding frame 108, one embodiment of the present disclosure is not limited to this. For example, one vapor deposition mask 102 may be held by the holding frame 108 via the connection part 106.

The vapor deposition mask unit 100 according to an embodiment of the present disclosure is used in a step of forming an organic EL element in a display panel manufacturing process. Specifically, it is used in a step of forming a light emitting layer of an organic EL element using a vacuum evaporation method. In the step of forming the light emitting layer, the evaporation region on the mother glass substrate side is arranged so as to match the mask pattern 104 on the evaporation mask 102 side, the evaporation material passes through the plurality of openings 103, and the evaporation material is deposited on the evaporation region. do.

The vapor deposition mask 102 and the connection portion 106 are formed using a zero-valent metal material such as nickel (Ni), copper (Cu), titanium (Ti), or chromium (Cr). The compositions of the materials of the vapor deposition mask 102 and the connection portion 106 may be the same. Similar to the vapor deposition mask 102 and the connecting portion 106, the holding frame 108 is also made of a zero-valent metal material such as nickel (Ni), iron (Fe), cobalt (Co), chromium (Cr), or manganese (Mn). It is formed. For example, the material of the holding frame 108 may be an alloy containing iron (Fe) and chromium (Cr), or invar, which is an alloy of iron (Fe), nickel (Ni), and manganese (Mn), and the alloy includes carbon. (C) may be included.

FIG. 3 is a schematic plan view of the vapor deposition mask 102. Vapor deposition mask 102 includes a mask body 110 including a pattern region 112 in which opening pattern 102 is provided, and a peripheral region 114 surrounding pattern region 102 and in which opening pattern 104 is not provided.

The opening pattern 104 includes a plurality of openings 103 that pass through the mask body 110. As shown in FIG. 3, each opening 103 may have a rectangular shape having a long side extending in the first direction D1 and a short side extending in a second direction D2 orthogonal to the first direction D1. However, in one embodiment of the present disclosure, the shape of the opening 103 is not limited to a rectangle. As an example, the plurality of openings 103 may be arranged in a matrix in the first direction D1 and the second direction D2 in the pattern region 112.

The pattern region 112 includes a first region 116 including a plurality of first openings 103-1, and a second region 118 adjacent to the first region 116 and including a plurality of second openings 103-2. In other words, the plurality of openings 103 include a first opening 103-1 provided in the first region 116 and a second opening 103-2 provided in the second region 118. As shown in FIG. 3, in this embodiment, the second region 118 is located between the first region 116 and the peripheral region 114 in the second direction. In other words, the second region 118 is located at the boundary between the pattern region 112 and the peripheral region 114 in the second direction.

The first aperture 103-1 may be an aperture corresponding to a pixel located in a light emitting region of a display area of a display panel. On the other hand, the second opening 103-2 may be an opening corresponding to a dummy pixel located in a non-light-emitting area provided adjacent to a light-emitting area in the display area. Dummy pixels, unlike pixels in the light emitting region, do not contribute to display. The first openings 103-1 may be arranged in a matrix in the first direction D1 and the second direction D2 in the first region 116. The second openings 103-2 may be arranged in a line along the first direction D1. The separation distance (second distance) between two second openings 103-2 adjacent to each other in the first direction D1 is the separation distance (first distance) between two first openings 103-1 adjacent to each other in the first direction D1. larger than

FIG. 4 is an enlarged view showing area BA1 in FIG. As shown in FIG. 4, a second distance d2 separating two second openings 103-2 adjacent to each other in the first direction D1 is a distance d2 separating two first openings 103-1 adjacent to each other in the first direction D1. (d2>d1). The second distance d2 is preferably 1.5 times or more and 2.5 times or less the first distance d1.

Furthermore, the width w2 of the second opening 103-2 in the first direction D1 may be smaller than the width w1 of the first opening 103-1 in the first direction D1 (w2<w1). In other words, the length of the long side of the second opening 103-2 may be shorter than the length of the long side of the first opening 103-1. The width w2 of the second opening 103-2 is preferably 0.49 times or more and 0.93 times or less the width w1 of the first opening 103-1.

As described above, in the vapor deposition process, the vapor deposition mask and the mother glass substrate are brought into contact to deposit the vapor deposition material in the vapor deposition region. When the vapor deposition process is completed, the vapor deposition mask and the mother glass substrate are separated, but at that time, the vapor deposition mask may stick to the mother glass substrate due to film deposition or electrification. If this happens repeatedly, metal fatigue will occur in the vapor deposition mask due to load being applied to the pattern area with low rigidity, especially around the outermost opening pattern located at the border with the peripheral area with high rigidity, and the metal fatigue will occur. Wrinkles and distortions occur around the opening pattern on the outer periphery. As a result, a so-called rib breakage may occur, in which a pixel corresponding to the outermost opening pattern is misaligned, or the interval between adjacent pixels is collapsed so that the adjacent pixels come into contact with each other.

Therefore, the present inventor created a second opening 103-2 corresponding to a dummy pixel in the boundary portion (second region 118) between the pattern region 112 and the peripheral region 114 in the second direction in the pattern region 112 of the vapor deposition mask 102. and by making the separation distance between the second openings 103-2 adjacent to each other in the first direction D1 larger than the separation distance between the first openings 103-1 adjacent to each other in the first direction D1, It has been found that the rigidity of the region 118 can be made higher than the rigidity of the first region 116 in which the first opening 103-1 is provided. Thereby, in the pattern area 112, the difference in rigidity, that is, the difference in strength, at the boundary between the pattern area 112 and the peripheral area 114 in the second direction can be reduced, and the load on the boundary can be reduced. As a result, metal fatigue of the vapor deposition mask 102 can be suppressed, and the occurrence of pixel misalignment and rib breakage can be prevented.

The inventor determined the magnitude of the second distance d2 relative to the first distance d1 by simulating the amount of displacement of the vapor deposition mask when the vapor deposition mask and the glass substrate are separated. In the simulation, as shown in FIG. A vapor deposition mask 402 was assumed to include a frame 408 and a connecting portion 406 that connects the mask main body 410 and the holding frame 408. The openings 403 have a rectangular shape with a long side along the y direction and a short side along the x direction, and are arranged in a matrix in the xy direction. In other words, the x direction in FIG. 5 corresponds to the second direction D2 shown in FIG. 3, and the y direction in FIG. 5 corresponds to the first direction D1 shown in FIG. 3.

As shown in FIG. 5, the row of openings adjacent to the peripheral area 414 in the x direction is the first row (X-1), and the next rows along the x direction are the second row (X-2) and the third row. Eye (X-3), etc. were set. In addition, in the mask body 410, the region where the openings 403 in the first row (X-1) are provided is region A, the region where the openings 403 in the second row (X-2) are provided is region B, and the region where the openings 403 in the second row (X-2) are provided is region B. The area where the opening 403 of (X-3) is provided is area C, the area where the opening 403 of the 4th row (X-4) is provided is area D, and the area where the opening 403 of the 5th line (X-5) is provided. The area in which this occurs is defined as area E. Table 1 below shows the physical property value settings for each component of the vapor deposition mask 402 in the simulation.

Under the simulation conditions shown in Table 1, the present inventor determined that in the pattern region 412, the width wy in the y direction of the openings 403 in the first row (X-1) adjacent to the peripheral region 414, and The setting of the separation distance dy between the openings 403 was changed as shown in Table 2 below, and the amount of displacement in the z direction (thickness direction of the vapor deposition mask 402) with respect to the amount of displacement in the x direction of the mask body 110 was calculated. . The width (aperture width) in the y direction of the openings 403 in the second row (X-2) to the fifth row (X-5) was set to 68 μm, and the separation distance between adjacent openings 403 in the y direction was set to 10 μm. . The calculated amount of displacement in the z direction (height direction) relative to the amount of displacement in the x direction of the mask body 110 in areas A to E is shown in FIG. 6(a).

From the graph showing the amount of displacement in the z direction (height direction) with respect to the amount of displacement in the x direction of the mask body 110 shown in FIG. 6(a), the rate of change (Δ) in the slope of the graph was calculated. FIG. 6B shows the calculated rate of change of the slope with respect to the amount of displacement of the mask body 110 in the x direction. Further, the maximum value of the slope change rate (Δ) and the ratio of such load are shown in Table 3 below. In Table 3, the line in parentheses after the maximum value of the slope change rate (Δ) indicates the row in which the slope change rate (Δ) is the maximum. The load ratio for each setting shown in Table 3 is based on the load applied to area A of setting 1 as 100%, and the load applied to the area with the maximum rate of change in each setting relative to the load applied to area A of setting 1. The percentage of

Referring to FIG. 6(b) and Table 3, the simulation with setting 3 had the lowest maximum value of the rate of change in slope (Δ). In other words, in setting 3, the amount of displacement in the z direction relative to the amount of displacement in the x direction of the mask body 410 was the smallest. This is achieved by setting the separation distance dy between the openings 403 in the first row (X-1) that are adjacent to each other in the y direction to be twice the separation distance between the openings 403 in the second row (X-2) and beyond. It is presumed that the rigidity of the region A where the opening 403 in the first row (X-1) is located is improved, and the load applied to the region A is reduced.

Furthermore, as is clear from FIG. 6(b), in setting 3, the slope change rate (Δ) of region A and the slope change rate (Δ) of region B, where the slope change rate (Δ) was the largest. ) is small. This shows that the difference between the stiffness of region A and the stiffness of region B is small. That is, in setting 3, variations in the rigidity of the mask body 410 are improved. As a result, it can be seen that when the vapor deposition mask 402 and the glass substrate are separated, variations in the load applied to the mask body 410 can be reduced, and metal fatigue of the vapor deposition mask 402 can be significantly suppressed.

In setting 2 and settings 4 to 6, the separation distance dy between the openings 403 in the first row (X-1) that are adjacent to each other in the y direction is the separation distance between the openings 403 in the second row (X-2) and onward. 1.5 times, 2.5 times, 3 times, and 4.5 times. As a result, the maximum values of the slope change rate (Δ) in Setting 2 and Settings 4 to 6 were each smaller than the maximum value of the slope change rate (Δ) in Setting 1. Therefore, it can be seen that the amount of displacement in the z direction relative to the amount of displacement in the x direction of the mask body 410 in settings 2 and settings 4 to 6 is reduced compared to setting 1.

On the other hand, referring to FIG. 6(b), in setting 2, the difference in the rate of change in slope (Δ) between area A where the rate of change in slope (Δ) is maximum and the surrounding area 414 is greater than that in setting 3. It's also big. This indicates that the difference in stiffness between region A and peripheral region 414 is not as small as setting 3. Further, in settings 4 to 6, the difference in the rate of change in slope (Δ) between region B, where the rate of change in slope (Δ) is maximum, and region A is larger than in setting 3. This indicates that although the stiffness of region A has improved, the difference between the stiffness of region A and the stiffness of region B has become larger, and the load applied to region B has become larger.

As described above, in the mask body 410, the separation distance dy between the openings 403 in the first row (X-1) that are adjacent to each other is greater than the separation distance between the openings 403 in the second row (X-2) and onward. It can be seen that by increasing the size, the difference in rigidity, that is, the difference in strength, at the boundary between the pattern area 412 and the peripheral area 414 can be reduced, and the load applied to the boundary can be reduced. On the other hand, if the separation distance dy is made more than 2.5 times the separation distance between the openings 403 in the second row (X-2) and subsequent rows, the area where the openings 403 in the first row (X-1) are located (area A) There is a large difference in rigidity between the area (area B) and the area (area B) where the opening 403 in the second row (X-2) is located (see Settings 5 and 6 above). This is because when the vapor deposition mask 402 and the glass substrate are separated, a large load is applied to the region (region B) where the openings 403 in the second row (X-2) are located, and metal fatigue may occur in this region. It shows that there is.

Through the simulation described above, the present inventor determined that in the pattern region 412 adjacent to the peripheral region 414 in the x direction, the separation distance dy between the openings 403 in the first row (X-1) was ) It has been found that variations in the rigidity of the mask body 410 can be significantly improved when the distance between the openings 403 is set to 1.5 times or more and 2.5 times or less as the distance between the subsequent openings 403.

[Second embodiment]
In the first embodiment described with reference to FIGS. 1 to 4, in the second region 118 of the pattern region 112, one row of second openings 103-2 is arranged in the second direction D2. However, the present disclosure is not limited thereto, and in the second region 118, two or more rows of second openings 103-2 may be arranged along the second direction D2.

FIG. 7 is a schematic plan view of a vapor deposition mask 102A according to a second embodiment of the present disclosure. The configuration of the vapor deposition mask 102A shown in FIG. 7 is the same as the vapor deposition mask 102 according to the first embodiment except for the arrangement of the second opening 103-2 in the second region 118A. Therefore, in this embodiment, the second region 118A will be mainly described, and the description of the other configurations will be omitted.

The second region 118A is adjacent to the first region 116 in the second direction. A plurality of second openings 103-2 are provided in the second region 118A. The second openings 103-2 may be arranged in a matrix in the first direction D1 and the second direction D2 in the second region 118A. That is, in the second region 118A, the second openings 103-2 are arranged in two or more rows along the second direction D2. FIG. 7 shows an example in which the second openings 103-2 are arranged in three rows along the second direction D2. Similar to the first embodiment, the separation distance (second distance) between two second openings 103-2 adjacent to each other in the first direction D1 is is larger than the separation distance (first distance).

FIG. 8 is an enlarged view showing area BA2 in FIG. 7. As shown in FIG. 8, the second opening 103-2 provided in the second region 118A is moved from the first region 116 side to the peripheral region 114 side, such as a second opening 103-2a, a second opening 103-2b, 103-2c. A second distance d2a separating two second openings 103-2a adjacent to each other in the first direction D1, a second distance d2b separating two second openings 103-2b adjacent to each other in the first direction D1, and a second distance d2b separating two second openings 103-2b adjacent to each other in the first direction D1. The second distance d2c separating the two openings 103-2c is larger than the first distance d1 separating the two first openings 103-1 adjacent to each other in the first direction D1 (d2a, d2b, d2c>d1). The second distances d2a, d2b, and d2c are preferably 1.5 times or more and 2.5 times or less the first distance d1.

Furthermore, even if the second distance d2c separating the second openings 103-2c adjacent to the peripheral region 114 is larger than the second distance d2a separating the second openings 103-2a adjacent to the first region 116, Good (dc>da). Further, the second distance d2 separating the second opening 103-2 may gradually increase from the first region 116 side to the peripheral region 114 side. In other words, the relationship between the second distance d2a, the second distance d2b, and the second distance d2c may be dc>db>da. The second distance d2a, the second distance d2b, and the second distance d2c may be in a range of 1.5 times or more and 2.5 times or less of the first distance d1.

Further, the widths w2a, w2b, and w2c of the second opening 103-2a, the second opening 103-2b, and the second opening 103-2c in the first direction D1 are the widths of the first opening 103-1 in the first direction D1. It may be smaller than w1 (w2a, w2b, w2c<w1). In other words, the length of the long side of the second opening 103-2a, the second opening 103-2b, and the second opening 103-2c may be shorter than the length of the long side of the first opening 103-1. Furthermore, the lengths of the long sides of the second opening 103-2a, the second opening 103-2b, and the second opening 103-2c gradually become smaller from the first region 116 side to the peripheral region 114 side. Good (w2a>w2b>w2c). It is preferable that the widths w2a, w2b, and w2c of the second opening 103-2 range from 0.49 times to 0.93 times the width w1 of the first opening 103-1.

In the second embodiment, as in the first embodiment, second apertures 103-2a, 103-2b, and 103-2c corresponding to dummy pixels are provided, and two second apertures adjacent to each other in the first direction D1 are provided. 103-2a, a second distance d2b separating two adjacent second openings 103-2b, and a second distance d2c separating two adjacent second openings 103-2c. By making the separation distance d1 between adjacent first openings 103-1 larger than the distance d1 in the first direction D1, the rigidity of the second region 118A is made higher than the rigidity of the first region 116 in which the first opening 103-1 is provided. can also be made higher. Thereby, in the pattern area 112, the difference in rigidity, that is, the difference in strength, at the boundary between the pattern area 112 and the peripheral area 114 in the second direction can be reduced, and the load on the boundary can be reduced.

[Modified example]
In the first and second embodiments described above, the vapor deposition masks 102 and 102A have a rectangular shape, and the second regions 118 and 118A in which the second opening 103-2 is provided are similar to the first region in the second direction. 116 has been described. However, the present disclosure is not limited thereto.

FIG. 9 is a schematic diagram showing a portion of a vapor deposition mask 802 according to a modified example of the present disclosure. FIG. 9 shows a vapor deposition mask 802 having a rounded rectangular shape. The vapor deposition mask 802 includes a mask main body 810, as in the twenty-first embodiment and the second embodiment. include. The pattern region 812 may have a substantially rounded rectangular shape in accordance with the shape of the vapor deposition mask 802. In this case, as shown in the inserted enlarged view of FIG. ). This modification can be applied to the first embodiment and the second embodiment.

In the first embodiment, second embodiment, and modified example described above, the first aperture 103-1 is an aperture corresponding to a pixel located in a light emitting region of a display area in a display panel, and the second aperture 103 The case where -2 is an aperture corresponding to a dummy pixel located in a non-light-emitting region provided adjacent to a light-emitting region has been described. However, the second aperture 103-2 is not limited to an aperture corresponding to a dummy pixel. The second aperture 103-2 may be an aperture corresponding to a pixel located in a light emitting region of a display area adjacent to a non-display area of the display panel.

The embodiments described above as one embodiment of the present disclosure can be implemented in appropriate combinations as long as they do not contradict each other. Furthermore, the gist of the present disclosure also includes those in which a person skilled in the art appropriately adds, deletes, or changes the design of components based on the configuration shown in the embodiments, or adds, omit, or changes the conditions of steps. as long as it is included in the scope of the invention.

Even if there are other effects that are different from the effects brought about by the aspects of each embodiment described above, those that are obvious from the description of this embodiment or that can be easily predicted by a person skilled in the art will naturally be included. It is understood that this is provided by one embodiment of the present disclosure.

100... Vapor deposition mask unit, 102, 102A, 802... Vapor deposition mask, 103... Opening, 103-a... First opening, 103-2... Second opening, 104... Opening Pattern, 106... Connection portion, 108... Holding frame, 110... Mask body, 112... Pattern area, 114... Peripheral area, 116... First area, 118, 118A...・Second area

Claims (9)

a mask body including a pattern area provided with an opening pattern and a peripheral area surrounding the pattern area;
a holding frame that supports the mask body;
a connection part that connects the mask main body and the holding frame;
Equipped with
The opening pattern includes a plurality of rectangular openings having long sides extending in a first direction and short sides extending in a second direction perpendicular to the first direction,
The plurality of openings include a plurality of first openings and a plurality of second openings adjacent to the first opening and provided between the first opening and a peripheral area in the second direction,
A second distance separating second openings adjacent to each other in the first direction is greater than a first distance separating first openings adjacent to each other in the first direction. The vapor deposition mask according to claim 1, wherein the second distance is 1.5 times or more and 2.5 times or less the first distance. The vapor deposition mask according to claim 1 or 2, wherein the length of the long side of the second opening is 0.49 times or more and 0.93 times or less the length of the long side of the first opening. a mask body including a pattern area provided with an opening pattern and a peripheral area surrounding the pattern area;
a holding frame that supports the mask body;
a connection part that connects the mask main body and the holding frame;
Equipped with
The pattern area includes a first area including a plurality of first openings and a second area including a plurality of second openings,
The first opening has a rectangular shape having a long side extending in a first direction and a short side extending in a second direction perpendicular to the first direction,
The second opening has a rectangular shape having a long side extending in the first direction and a short side extending in the second direction,
The second region is adjacent to the first region and is provided between the peripheral region and the first region in the second direction,
Of the plurality of second openings, a second distance that separates second openings that are adjacent to the peripheral area and that are adjacent to each other in the first direction separates first openings that are adjacent to each other in the first direction. A vapor deposition mask larger than the first distance. The vapor deposition mask according to claim 4, wherein the second distance is 1.5 times or more and 2.5 times or less of the first distance. 6. The vapor deposition mask according to claim 4, wherein the length of the long side of the second opening is 0.49 times or more and 0.93 times or less the length of the long side of the first opening. The vapor deposition mask according to any one of claims 4 to 6, wherein in the second region, the plurality of second openings are provided in a matrix in the first direction and the second direction. Among the plurality of second openings, a second distance separating second openings that are adjacent to the peripheral area and adjacent to each other in the first direction is a second distance that separates second openings that are adjacent to the first area and in the first direction. 8. The deposition mask of claim 7, wherein the second distance is greater than the second distance separating adjacent second openings. 9. A second distance separating second openings adjacent to each other in the first direction gradually increases from a side adjacent to the first region to a side adjacent to the peripheral region. Vapor deposition mask.

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