JP2023018165A - Semiconductor device - Google Patents

Abstract

Kind Code: A1 An object of the present invention is to provide a semiconductor device capable of improving reliability of electrical connection by a bus bar.
A semiconductor device (10) includes a circuit section (20) and a bus bar (50). The circuit section 20 has a mounting substrate 30 having a mounting surface 30 a and semiconductor chips 40 ( 41 , 42 ) arranged on the mounting surface 30 a of the mounting substrate 30 . The bus bar 50 has a plurality of connection portions 51 (511 to 513) connected to a plurality of connection objects P10 (P11 to P13) on the mounting surface 30a via a plurality of conductive joint members 60 (61 to 63). ) and a connecting portion 52 connecting a plurality of connecting portions 51 (511 to 513). The plurality of connecting portions 51 ( 511 to 513 ) includes a first connecting portion 511 and second and third connecting portions 512 and 513 on both sides of the first connecting portion 511 in the longitudinal direction of the connecting portion 52 . The first connection portion 511 is farther from the mounting surface 30a than the second and third connection portions 512 and 513 are.
[Selection diagram] Fig. 2

Description

The present disclosure relates generally to semiconductor devices. The present disclosure particularly relates to a semiconductor device including a busbar (busbar).

Patent Literature 1 discloses a semiconductor device. The semiconductor device of Patent Document 1 comprises first to third insulating circuit boards on which first to third semiconductor chips are mounted, respectively; a case for housing the first to third insulating circuit boards; a terminal connection member extending between the side walls and having both ends bridged over the side walls. The terminal connection member (bus bar) has three first to third connection terminals (connections) electrically connected to the first to third semiconductor chips, respectively.

JP 2018-186244 A

In the semiconductor device disclosed in Patent Document 1, when the dimensional accuracy of the case that fixes or holds the terminal connection member (bus bar) becomes insufficient, the terminal connection member (bus bar) may tilt. At this time, the three first to third connection terminals of the terminal connection member may not be electrically connected correctly to the first to third semiconductor chips, respectively. This can be a factor affecting the reliability of electrical connections.

An object of the present invention is to provide a semiconductor device capable of improving the reliability of electrical connection by bus bars.

A semiconductor device according to one aspect of the present disclosure includes a circuit portion and a bus bar. The circuit section has a mounting substrate having a mounting surface, and a semiconductor chip arranged on the mounting surface of the mounting substrate. The bus bar has a plurality of connection portions connected to a plurality of connection objects on the mounting surface via a plurality of conductive joint members, and a connecting portion connecting the plurality of connection portions. The plurality of connecting portions includes a first connecting portion and second and third connecting portions on both sides of the first connecting portion in the length direction of the connecting portion. The first connecting portion is farther from the mounting surface than the second and third connecting portions.

According to the aspect of the present disclosure, it is possible to improve the reliability of electrical connection by bus bars.

FIG. 1 is a schematic plan view of a semiconductor device of one embodiment. 2 is a cross-sectional view taken along line XX of FIG. 1. FIG. FIG. 3 is a schematic cross-sectional view of a semiconductor device according to one modification. FIG. 4 is a schematic cross-sectional view of a semiconductor device according to one modification. FIG. 5 is a schematic cross-sectional view of a semiconductor device according to one modification. FIG. 6 is a schematic plan view of a semiconductor device according to one modification.

(1) Embodiment (1-1) Overview FIGS. 1 and 2 show a semiconductor device 10 of one embodiment. Note that FIGS. 1 and 2 are schematic diagrams, and the ratios of the sizes and thicknesses of the constituent elements in each diagram do not necessarily reflect the actual dimensional ratios. This point is the same for FIGS. 3 to 6 as well.

A semiconductor device 10 includes a circuit section 20 and a bus bar 50 . The circuit section 20 has a mounting substrate 30 having a mounting surface 30 a and a semiconductor chip 40 (a plurality of semiconductor chips 41 and 42 ) arranged on the mounting surface 30 a of the mounting substrate 30 . The bus bar 50 has a plurality of connection portions 51 (511 to 513) connected to a plurality of connection objects P10 (P11 to P13) on the mounting surface 30a via a plurality of conductive joint members 60 (61 to 63). ) and a connecting portion 52 connecting a plurality of connecting portions 51 (511 to 513). The plurality of connection portions 51 (511 to 513) are composed of a first connection portion 511 and second and third connection portions on both sides of the first connection portion 511 in the length direction of the connecting portion 52 (horizontal direction in FIG. 2). 512, 513. The first connection portion 511 is farther from the mounting surface 30a than the second and third connection portions 512 and 513 are.

By the way, in the semiconductor device 10 , for example, when the first and third connection portions 511 and 513 are joined to the circuit portion 20 before the second connection portion 512 is joined, the bus bar 50 is moved from a desired position with respect to the circuit portion 20 . You may lean too far. If the bus bar 50 is excessively tilted, the second connection portion 512 or the third connection portion 513 may be lifted from the circuit portion 20, resulting in poor connection between the second connection portion 512 or the third connection portion 513 and the circuit portion 20, which may cause electrical damage. connection may be unreliable. In addition, the bonding member between the second connection portion 512 or the third connection portion 513 and the circuit portion 20 becomes too thin, and the bonding strength between the second connection portion 512 or the third connection portion 513 and the circuit portion 20 decreases. , the reliability of the mechanical connection may decrease. In contrast, in the semiconductor device 10 of the present embodiment, the first connection portion 511 is farther from the mounting surface 30a than the second and third connection portions 512 and 513 are. Therefore, the second and third connection portions 512 and 513 are likely to be joined to the circuit portion 20 earlier than the first connection portion 511 . This reduces the possibility that the bus bar 50 will be excessively tilted from the desired position relative to the circuit portion 20 . As a result, according to the semiconductor device 10 of this embodiment, the reliability of electrical connection by the bus bar 50 can be improved.

(1-2) Details Hereinafter, the semiconductor device 10 of the present embodiment will be described with reference to FIGS. 1 and 2. FIG. The semiconductor device 10 includes a circuit section 20 , a bus bar 50 , a joint member 60 , terminal sections 71 and 72 , a body 80 and a sealing section 90 . It should be noted that the sealing portion 90 is omitted in FIG. 1 for simplification of illustration.

Body 80 accommodates circuit portion 20 , bus bar 50 , and joint member 60 . As shown in FIG. 2 , body 80 includes heat sink 810 and frame 820 .

The heat sink 810 has a plate portion 811 and a plurality of fins 812 . The plate portion 811 has a rectangular plate shape and has a first principal surface 811a and a second principal surface 811b opposite to the first principal surface 811a. The plurality of fins 812 protrude from the second main surface 811 b of the plate portion 811 in the thickness direction of the plate portion 811 . A material of the heat sink 810 is mainly copper or aluminum. Here, the material of the heat sink 810 is not limited to pure copper or aluminum. good.

The frame portion 820 has a frame shape (rectangular frame shape) and is arranged on the first main surface 811 a of the plate portion 811 of the heat sink 810 . Frame portion 820 surrounds circuit portion 20 and bus bar 50 . The frame portion 820 has electrical insulation. Materials of the frame part 820 are, for example, PBT (Polybutylene terephthalate), PPS (Polyphenylene sulfide), LCP (Liquid Crystal Polymer), and PBI (Polybenzomidazole).

The terminal portions 71 and 72 are terminal portions for external connection. The terminal portions 71 and 72 are provided integrally with the frame portion 820 . For example, the terminal portions 71 and 72 are provided integrally with the frame portion 820 by insert molding. Each of terminal portions 71 and 72 has one end exposed on frame portion 820 and the other end electrically connected to circuit portion 20 . In addition, the terminal portions 71 and 72 are located on both sides of the frame portion 820 in the length direction (horizontal direction in FIG. 1) and are aligned in the length direction of the frame portion 820 . Materials for the terminal portions 71 and 72 include copper and copper alloys such as Cu—Mo, CMC, and CIC.

The circuit section 20 includes a mounting board 30 and a semiconductor chip 40 . In this embodiment, the circuit section 20 includes a plurality of semiconductor chips 40 .

The mounting board 30 has a mounting surface 30a and a bonding surface 30b opposite to the mounting surface 30a in the thickness direction of the mounting board 30 . The outer peripheral shape of the mounting board 30 in plan view from the thickness direction of the mounting board 30 is, for example, a rectangular shape. That is, the mounting board 30 has a length.

In this embodiment, the mounting substrate 30 has an insulating substrate 310 , a first conductor layer 320 and a second conductor layer 330 . The insulating substrate 310 has a first surface 310a and a second surface 310b, which are both sides in the thickness direction. The outer peripheral shape of the insulating substrate 310 in plan view from the thickness direction of the insulating substrate 310 is, for example, a rectangular shape. The outer peripheral shape of the insulating substrate 310 is the same as the outer peripheral shape of the mounting substrate 30 . The insulating substrate 310 is, for example, a silicon nitride substrate. The insulating substrate 310 is not limited to a silicon nitride substrate, and may be, for example, an aluminum nitride substrate, an alumina substrate, or a resin substrate. The first conductor layer 320 is provided on the first surface 310 a of the insulating substrate 310 . The surface of the first conductor layer 320 opposite to the insulating substrate 310 in the thickness direction constitutes the mounting surface 30 a of the mounting substrate 30 . The mounting surface 30a is a flat surface. In this embodiment, the first conductor layer 320 is composed of a first portion 320a and a second portion 320b. As shown in FIG. 1, the outer peripheral shape of the first portion 320a is rectangular, and the outer peripheral shape of the second portion 320b is L-shaped. A portion of the second portion 320b is used as the electrode 340. As shown in FIG. The surface of the first portion 320a opposite to the insulating substrate 310 in the thickness direction and the surface of the second portion 320b opposite to the insulating substrate 310 in the thickness direction are on the same plane, and these are the mounting surfaces. 30a. The second conductor layer 330 is provided on the second surface 310 b of the insulating substrate 310 . The surface opposite to the insulating substrate 310 in the thickness direction of the second conductor layer 330 constitutes the bonding surface 30 b of the mounting substrate 30 . The material of the first conductor layer 320 and the second conductor layer 330 is Cu or Al, for example.

In this embodiment, the mounting substrate 30 and the heat sink 810 are joined by the joining portion 350 . The joint portion 350 is interposed between the joint surface 30 b of the mounting substrate 30 and the first main surface 811 a of the plate portion 811 of the heat sink 810 . Solder or sintered metal is used for the joint 350 . Moreover, from the viewpoint of heat resistance, it is preferable that the joint portion 350 is made of a sintered metal. The sintered metal is sintered silver, sintered copper, or the like.

A plurality of semiconductor chips 40 are arranged on the mounting surface 30 a of the mounting substrate 30 . In this embodiment, the multiple semiconductor chips 40 include a first semiconductor chip 41 and a second semiconductor chip 42 . The first semiconductor chip 41 and the second semiconductor chip 42 are arranged on the first portion 320a. The first semiconductor chip 41 and the second semiconductor chip 42 are arranged such that the electrodes 340 , the first semiconductor chip 41 and the second semiconductor chip 42 are aligned along the length of the mounting substrate 30 . In the present embodiment, the semiconductor chip 40 and the mounting board 30 are joined together by the joining portion 360 . More specifically, the first semiconductor chip 41 and the first portion 320a of the mounting board 30 are joined together by a joining portion 360 (361). Also, the second semiconductor chip 42 and the first portion 320a of the mounting substrate 30 are joined together by a joining portion 360 (362). Solder or sintered metal is used for the joints 360 (361, 362). From the viewpoint of heat resistance, it is preferable that the joints 360 (361, 362) are made of sintered metal. The sintered metal is sintered silver, sintered copper, or the like. Sintered silver is a sintered body in which silver particles are bonded together by sintering. Sintered silver is porous silver.

Here, the semiconductor device 10 is, for example, a power semiconductor module that can be applied to electrical devices such as an inverter that converts a DC voltage into a three-phase AC voltage, a multi-level inverter, and a matrix converter that performs AC-AC power conversion. In the semiconductor device 10 constituting the power semiconductor module, each of the plurality of semiconductor chips 40 is, for example, a SiC-based MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), or a GaN-based power transistor. including A GaN-based power transistor is, for example, a dual-gate GaN-based GIT (GIT: Gate Injection Transistor). In addition to the plurality of semiconductor chips 40, the semiconductor device 10 may include electronic components such as chip capacitors, chip inductors, and chip resistors.

The bus bar 50 is used to electrically connect a plurality of connection targets P10 on the mounting surface 30a of the circuit section 20. FIG. The busbar 50 can be formed by mechanically working a metal plate. Here, since the thickness dimension of the metal plate material is substantially uniform, the thickness dimension of the bus bar 50 is also substantially uniform. Materials for the bus bar 50 include copper and copper alloys such as Cu—Mo, CMC, and CIC. In this embodiment, the multiple connection targets P10 include a first connection target P11, a second connection target P12, and a third connection target P13. The first connection target P11 is the first semiconductor chip 41 of the circuit section 20 . The second connection target P12 is the second semiconductor chip 42 of the circuit section 20 . The third connection target P13 is the electrode 340 of the circuit section 20 . As shown in FIGS. 1 and 2 , the busbar 50 includes a plurality of connecting portions 51 and connecting portions 52 . The connecting portion 52 connects the plurality of connecting portions 51 . The connecting portion 52 is linear. More specifically, the outer peripheral shape of the connecting portion 52 in plan view from the thickness direction of the connecting portion 52 is rectangular. The side of the connecting portion 52 opposite to the mounting surface 30a is a flat surface, and this surface is the surface 501 of the busbar 50 that is the farthest from the mounting surface 30a. The plurality of connection portions 51 are connected to the plurality of connection targets P10 via the plurality of conductive joint members 60 . In this embodiment, the plurality of connecting portions 51 includes a first connecting portion 511 , a second connecting portion 512 and a third connecting portion 513 . Here, the second connection portion 512 and the third connection portion 513 are on both sides of the first connection portion 511 in the length direction of the connecting portion 52 . The first connection portion 511 is located in the central portion of the busbar 50 and protrudes toward the mounting surface 30a. The first connection portion 511 is preferably located near the center of gravity of the busbar 50 . The first connection portion 511 is bonded to the first semiconductor chip 41, which is the first connection target P11, by the bonding member 60 (first bonding member 61). The second connection portion 512 is located on the first end side (the right end side in FIGS. 1 and 2) of the bus bar 50 in the length direction and protrudes toward the mounting surface 30a. The second connection portion 512 is bonded to the second semiconductor chip 42, which is the second connection target P12, by the bonding member 60 (second bonding member 62). The third connection portion 513 is located on the second end side (the left end side in FIGS. 1 and 2) of the bus bar 50 in the length direction and protrudes toward the mounting surface 30a. The third connecting portion 513 is joined to the electrode 340, which is the third connection target P13, by the joining member 60 (the third joining member 63). Here, solder or sintered metal is used for the joining members 60 (first to third joining members 61 to 63). Moreover, from the viewpoint of heat resistance, it is preferable that the joining members 60 (the first to third joining members 61 to 63) are made of sintered metal. The sintered metal is sintered silver, sintered copper, or the like.

In the busbar 50, the first to third connecting portions 511 to 513 are joined to the first to third connection objects P11 to P13 of the circuit portion 20 by the joining members 60 (first to third joining members 61 to 63). be. As a result, the bus bar 50 is joined to the circuit section 20 and supported by the circuit section 20 . As described above, the electrodes 340 , the first semiconductor chip 41 and the second semiconductor chip 42 are arranged in a line along the length of the mounting substrate 30 . The first to third connection portions 511 to 513 are arranged in a line along the length direction of the bus bar 50 (that is, along the length direction of the connecting portion 52). Therefore, the bus bar 50 is joined to the circuit section 20 such that the length direction of the connecting portion 52 matches the length direction of the mounting substrate 30 . In this embodiment, the busbar 50 does not directly contact the frame portion 820 of the body 80 . Therefore, busbar 50 is not supported by body 80 . That is, busbar 50 is independent of body 80 . As a result, the bus bar 50 is less likely to be affected by changes in the positions of the body 80 and the circuit section 20, particularly in the thickness direction of the semiconductor device 10 (vertical direction in FIG. 2 or 3).

Here, in the semiconductor device 10, as shown in FIG. 2, the bus bar 50 is configured such that the first connection portion 511 is farther from the mounting surface 30a than the second and third connection portions 512 and 513 are. . Here, bus bar 50 is arranged such that surface 501 farthest from mounting surface 30a is flat and parallel to mounting surface 30a. Further, busbar 50 is substantially uniform in thickness dimension. Therefore, as shown in FIG. 2, D1<D2. D1 is the amount of protrusion of the first connection portion 511 from the connecting portion 52 toward the mounting surface 30a. In other words, D1 can also be said to be the distance between the portion of the first connecting portion 511 closest to the mounting surface 30a and the surface of the connecting portion 52 on the mounting surface 30a side (lower surface in FIG. 2). D2 is the amount of protrusion of the second connecting portion 512 from the connecting portion 52 toward the mounting surface 30a. In other words, D2 can also be said to be the distance between the portion of the second connecting portion 512 closest to the mounting surface 30a and the surface of the connecting portion 52 on the mounting surface 30a side (lower surface in FIG. 2). This increases the possibility that the second connection portion 512 will be joined to the circuit portion 20 earlier than the first connection portion 511 . Furthermore, as shown in FIG. 2, D1<D3. D3 is the amount of protrusion of the third connecting portion 513 from the connecting portion 52 toward the mounting surface 30a. In other words, D3 can also be said to be the distance between the portion of the third connecting portion 513 closest to the mounting surface 30a and the surface of the connecting portion 52 on the mounting surface 30a side (lower surface in FIG. 2). This increases the possibility that the third connection portion 513 will be joined to the circuit portion 20 earlier than the first connection portion 511 . Note that the relationship between D2 and D3 is not particularly limited.

In the semiconductor device 10, the bus bar 50 has the first connection portion 511, the second connection portion 512, and the third connection portion 513 connected to the first connection target P11, the second connection target P12, and the third connection target P13. are joined to each other. In particular, as shown in FIG. 2, D1+H1<D2+H2. H1 is the amount of protrusion of the first connection object P11 from the mounting surface 30a. In this embodiment, the first connection target P11 is the first semiconductor chip 41 . H1 is the distance from the mounting surface 30a to the surface of the first semiconductor chip 41 that is bonded to the first connection portion 511 . Here, the first semiconductor chip 41 is attached to the mounting surface 30 a by the bonding portion 361 . Therefore, H1 is determined by the thickness of the first semiconductor chip 41 and the thickness of the joint portion 361 . H2 is the amount of protrusion of the second connection object P12 from the mounting surface 30a. In this embodiment, the second connection target P12 is the second semiconductor chip 42 . H2 is the distance from the mounting surface 30a to the surface of the second semiconductor chip 42 that is bonded to the second connection portion 512 . Here, the second semiconductor chip 42 is attached to the mounting surface 30 a by the joints 362 . Therefore, H2 is determined by the thickness of the second semiconductor chip 42 and the thickness of the joint portion 362 . This increases the possibility that the second connection portion 512 will be joined to the circuit portion 20 earlier than the first connection portion 511 . Furthermore, as shown in FIG. 2, D1+H1<D3+H3. H3 is the amount of protrusion of the third connection object P13 from the mounting surface 30a. In this embodiment, the third connection object P13 is the electrode 340 exposed on the mounting surface 30a. H3 is the distance from the mounting surface 30a to the surface of the electrode 340 joined to the third connection portion 513 . This increases the possibility that the third connection portion 513 will be joined to the circuit portion 20 earlier than the first connection portion 511 . Therefore, H3 is 0. Note that the relationship between D2+H2 and D3+H3 is not particularly limited.

Also, in the semiconductor device 10 , the bus bar 50 is joined to the circuit section 20 by the first joining member 61 , the second joining member 62 and the third joining member 63 . In particular, as shown in FIG. 2, T1>T2. T1 is the thickness of the first joint member 61; T2 is the thickness of the second joint member 62; Furthermore, as shown in FIG. 2, T1>T3. T3 is the thickness of the third joint member 63; As a result, the second connection portion 512 is more likely to be joined to the circuit portion 20 earlier than the first connection portion 511, and the third connection portion 513 is more likely to be connected to the circuit portion 20 than the first connection portion 511. The possibility of being joined to the circuit section 20 increases. Note that the relationship between T2 and T3 is not particularly limited.

The sealing portion 90 covers and seals the circuit portion 20 and the bus bar 50 accommodated in the body 80 . The sealing portion 90 has electrical insulation and light shielding properties. Examples of materials for the sealing portion 90 include epoxy resin, maleimide resin, silicone gel, and the like. From the viewpoint of heat resistance, the epoxy resin preferably has a high glass transition temperature.

(2) Modifications Embodiments of the present disclosure are not limited to the above embodiments. The above-described embodiment can be modified in various ways according to design and the like, as long as the object of the present disclosure can be achieved. Modifications of the above embodiment are listed below.

FIG. 3 shows a modified semiconductor device 10A. Semiconductor device 10</b>A has bus bar 50</b>A different from bus bar 50 of semiconductor device 10 . The bus bar 50A is configured so that the first connection portion 511 is farther from the mounting surface 30a than the second and third connection portions 512 and 513 are. Here, bus bar 50A is arranged such that surface 501 farthest from mounting surface 30a is flat and parallel to mounting surface 30a. Furthermore, bus bar 50A is substantially uniform in thickness dimension. Here, D1<D2 and D1<D3. However, in the busbar 50A, the value of D1 is larger than in the case of the busbar 50A. An increase in D1 is offset by a decrease in T1, which is the thickness of the first joint member 61. FIG. Therefore, also in the semiconductor device 10A, D1+H1<D2+H2 and D1+H1<D3+H3. This results in T1>T2 and T1>T3. Therefore, also in the semiconductor device 10A, the second and third connection portions 512 and 513 are likely to be connected to the circuit portion 20 earlier than the first connection portion 511 is. This reduces the possibility that the bus bar 50 will be excessively tilted from the desired position relative to the circuit portion 20 . As a result, according to the semiconductor device 10A, the reliability of the electrical connection by the bus bar 50A can be improved.

3, the mounting substrate 30 includes an insulating substrate 310, a first conductor layer 320 formed on the first surface 310a in the thickness direction of the insulating substrate 310, and a first conductor layer 320 formed on the first surface 310a in the thickness direction of the insulating substrate 310. and a second conductor layer 330 formed on the second surface 310b. The surface of the first conductor layer 320 opposite to the insulating substrate 310 forms a mounting surface 30a. Here, the first conductor layer 320 and the second conductor layer 330 have the same thickness and the same outer shape as a whole. The first conductor layer 320 and the second conductor layer 330 are located at overlapping positions in the thickness direction of the insulating substrate 310 . However, the first conductor layer 320 is composed of a first portion 320a and a second portion 320b. Therefore, the volume of the first conductor layer 320 is the sum of the volume of the first portion 320a and the volume of the second portion 320b. In this case, the first conductor layer 320 has a smaller volume than the second conductor layer 330 . In this case, when heat is applied to the mounting substrate 30 , the degree of deformation of the second conductor layer 330 is greater than that of the first conductor layer 320 . As a result, as shown in FIG. 4, the mounting substrate 30 tends to warp so that the first conductor layer 320 side becomes a concave surface. In this case, the second and third connection targets P12 and P13 are closer to the bus bar 50A than the first connection target P11. Therefore, the second and third connection portions 512 and 513 are more likely to be connected to the circuit portion 20 earlier than the first connection portion 511 . This reduces the possibility that the bus bar 50A will be excessively tilted from the desired position with respect to the circuit section 20. FIG. As a result, according to the semiconductor device 10A, the reliability of the electrical connection by the bus bar 50A can be improved.

Note that the first conductor layer 320 does not necessarily have to be composed of a plurality of parts such as the first part 320a and the second part 320b. Whether the first conductor layer 320 is composed of a plurality of parts or composed of a single part can be appropriately determined according to the circuit configuration of the semiconductor device 10A. Here, even if the first conductor layer 320 is composed of a single portion, the volume of the first conductor layer 320 is preferably smaller than that of the second conductor layer 330 . For example, as shown in FIG. 5, the second conductor layer 330 may have a larger perimeter shape than the first conductor layer 320, thereby making the second conductor layer 330 larger in volume than the first conductor layer 320. may Also in this case, when heat is applied to the mounting substrate 30, the mounting substrate 30 tends to warp such that the first conductor layer 320 side becomes a concave surface. Therefore, similarly, the second and third connection portions 512 and 513 are likely to be joined to the circuit portion 20 earlier than the first connection portion 511 . This reduces the possibility that the bus bar 50A will be excessively tilted from the desired position with respect to the circuit section 20. FIG. As a result, according to the semiconductor device 10A, the reliability of the electrical connection by the bus bar 50A can be improved.

FIG. 6 shows a modified semiconductor device 10B. The semiconductor device 10B has a busbar 50B different from the busbar 50 of the semiconductor device 10 . The bus bar 50B is used to electrically connect a plurality of connection targets P10 on the mounting surface 30a of the circuit section 20. FIG. In the semiconductor device 10B, the plurality of connection objects P10 include a first connection object P11, a second connection object P12, a third connection object P13, a fourth connection object P14, and a fifth connection object P15. The first connection target P11 is the first semiconductor chip 41 of the circuit section 20 . The second connection target P12 is the second semiconductor chip 42 of the circuit section 20 . The third connection target P13 is the electrode 340 of the circuit section 20 . Further, the fourth connection target P14 and the fifth connection target P15 are the electrodes 340 (343, 343) of the circuit section 20. As shown in FIG. The electrode 342 is located at the second portion 320b of the first conductor layer 320 and is aligned with the second connection target P12 in the width direction of the mounting board 30 (vertical direction in FIG. 6). The electrode 343 is located at the first portion 320a of the first conductor layer 320 and is aligned with the first connection object P11, the second connection object P12, and the third connection object P13 in the length direction of the mounting substrate 30. . The electrode 343 is on the opposite side of the second connection object P12 to the first connection object P11.

The busbar 50B includes a plurality of connection portions 51 and connecting portions 52 and 53. As shown in FIG. The plurality of connection portions 51 are connected to the plurality of connection targets P10 via the plurality of conductive joint members 60 . The multiple connection portions 51 include a first connection portion 511 , a second connection portion 512 , a third connection portion 513 , a fourth connection portion 514 and a fifth connection portion 515 . Here, the connecting portion 52 connects the first connecting portion 511 , the second connecting portion 512 , the third connecting portion 513 , and the fifth connecting portion 515 among the plurality of connecting portions 51 . The connecting portion 53 extends in the width direction of the connecting portion 52 and connects the connecting portion 52 and the fourth connecting portion 514 . Therefore, the busbar 50B is L-shaped as a whole.

Thus, the bus bar 50B further includes additional connection portions (fourth connection portion 514 and fifth connection portion 515) in addition to the first to third connection portions 511, 512, and 513. FIG. In other words, the bus bar 50B is not necessarily limited to the configuration having only the first to third connection portions 511, 512, and 513. FIG. Here, the fifth connection portion 515 is an outer connection portion on the opposite side of the second connection portion 512 to the first connection portion 511 in the longitudinal direction of the connecting portion 52 . That is, the plurality of connecting portions 51 may include an outer connecting portion on the opposite side of the first connecting portion in the second or third connecting portion in the length direction of the connecting portion 52 . On the other hand, if the connecting portion 515 functions as the second connecting portion, the connecting portion 512 becomes the inner connecting portion between the second and third connecting portions 515 and 513 in the longitudinal direction of the connecting portion 52. . That is, the plurality of connecting portions 51 may include an inner connecting portion between the second and third connecting portions in the longitudinal direction of the connecting portion 52 . Further, the plurality of connecting portions 51 includes adjacent connecting portions (connecting portions 514) aligned with any of the first to third connecting portions in a direction (eg, width direction) crossing the length direction of the connecting portion 52. You can stay.

In a modified example, the semiconductor device 10 may include, in addition to the bus bar 50 , conductive members that electrically connect circuit components, electrodes, and the like of the circuit section 20 . Such a conductive member may be configured by a bus bar, may include a conductive terminal and a Cu wire, or may be a wire. Materials for the conductive member include Cu—Mo, CMC, and CIC.

In the above-described embodiment, the outer peripheral shape of the mounting substrate 30 in plan view from the thickness direction of the mounting substrate 30 is rectangular, but is not limited to this, and may be square, for example.

The configuration of the semiconductor device 10 of the above embodiment can also be applied to an electrical device having a busbar. In other words, the technical concept of the present disclosure can be applied to any device that does not have a semiconductor chip but has a bus bar.

(3) Aspects As is clear from the above embodiments and modifications, the present disclosure includes the following aspects. In the following, reference numerals are attached with parentheses only for the purpose of clarifying correspondence with the embodiments.

A first aspect is a semiconductor device (10; 10A; 10B) comprising a circuit section (20) and bus bars (50; 50A; 50B). The circuit section (20) has a mounting substrate (30) having a mounting surface (30a) and a semiconductor chip (40) arranged on the mounting surface (30a) of the mounting substrate (30). The bus bar (50; 50A; 50B) includes a plurality of connection portions ( 51), and a connecting portion (52) connecting the plurality of connecting portions (51). The plurality of connecting portions (51) includes a first connecting portion (511) and second and third connecting portions ( 512, 513). The first connecting portion (511) is farther from the mounting surface (30a) than the second and third connecting portions (512, 513). According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

A second aspect is a semiconductor device (10B) based on the first aspect. In the second aspect, the plurality of connecting portions (51) are arranged such that the first connecting portion (511) in the second or third connecting portion (512, 513) in the length direction of the connecting portion (52) and an outer connection (515) on the opposite side. According to this aspect, the reliability of the electrical connection by the bus bar (50B) can be improved.

A third aspect is a semiconductor device (10B) based on the first or second aspect. In a third aspect, the plurality of connecting portions (51) are arranged in an inner connecting portion (512) between the second and third connecting portions (512, 513) in the length direction of the connecting portion (52). )including. According to this aspect, the reliability of the electrical connection by the bus bar (50B) can be improved.

A fourth aspect is a semiconductor device (10; 10A; 10B) based on any one of the first to third aspects. In a fourth aspect, the connecting portion (52) is linear. According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

A fifth aspect is a semiconductor device (10; 10A; 10B) based on any one of the first to fourth aspects. In a fifth aspect, the mounting board (30) has a length. The length direction of the connecting portion (52) coincides with the length direction of the mounting board (30). According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

A sixth aspect is a semiconductor device (10A) based on any one of the first to fifth aspects. In the sixth aspect, the mounting substrate (30) comprises an insulating substrate (310) and a first conductor layer (320) formed on a first surface (310a) in the thickness direction of the insulating substrate (310). , and a second conductor layer (330) formed on a second surface (310b) in the thickness direction of the insulating substrate (310). The surface of the first conductor layer (320) opposite to the insulating substrate (310) constitutes the mounting surface (30a). The first conductor layer (320) has a smaller volume than the second conductor layer (330). According to this aspect, the reliability of the electrical connection by the bus bar (50A) can be improved.

A seventh aspect is a semiconductor device (10; 10A; 10B) based on any one of the first to sixth aspects. In the seventh aspect, the amount of protrusion of the first connecting portion (511) from the connecting portion (52) to the mounting surface (30a) is D1, and the connecting portion (52) of the second connecting portion (512) ) toward the mounting surface (30a), D1<D2. According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

An eighth aspect is a semiconductor device (10; 10A; 10B) based on the seventh aspect. In the eighth aspect, D1<D3, where D3 is the amount of protrusion of the third connecting portion (513) from the connecting portion (52) toward the mounting surface (30a). According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

A ninth aspect is a semiconductor device (10; 10A; 10B) based on any one of the first to sixth aspects. In the ninth aspect, the plurality of connection objects (P10) include a first connection object (P11) joined to the first connection portion (511) and a second connection object (P11) joined to the second connection portion (512). 2 connection target (P12). The amount of protrusion of the first connecting portion (511) from the connecting portion (52) to the mounting surface (30a) is D1, and the amount of protrusion of the first connection object (P11) from the mounting surface (30a) is H1, the amount of protrusion of the second connecting part (512) from the connecting part (52) toward the mounting surface (30a) is D2, the protrusion of the second connection object (P12) from the mounting surface (30a) If the amount is H2, then D1+H1<D2+H2. According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

A tenth aspect is a semiconductor device (10; 10A; 10B) based on the ninth aspect. In a tenth aspect, the circuit section (20) has a plurality of the semiconductor chips (40) arranged on the mounting surface (30a). The plurality of semiconductor chips (40) include a first semiconductor chip (41) to be the first connection target (P11) and a second semiconductor chip (42) to be the second connection target (P12). H1 is the distance from the mounting surface (30a) to the surface of the first semiconductor chip (41) that is bonded to the first connection portion (511). H2 is the distance from the mounting surface (30a) to the surface of the second semiconductor chip (42) that is joined to the second connection portion (512). According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

An eleventh aspect is a semiconductor device (10; 10A; 10B) according to the ninth or tenth aspect. In the eleventh aspect, the plurality of connection objects (P10) includes a third connection object (P13) joined to the third connection portion (513). The amount of protrusion of the third connecting portion (513) from the connecting portion (52) toward the mounting surface (30a) is D3, and the amount of protrusion of the third connection object (P13) from the mounting surface (30a) is H3, D1+H1<D3+H3. According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

A twelfth aspect is a semiconductor device (10; 10A; 10B) based on the eleventh aspect. In the twelfth aspect, the third connection object (P13) is an electrode (340) exposed on the mounting surface (30a). H3 is zero. According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

A thirteenth aspect is a semiconductor device (10; 10A; 10B) based on any one of the first to sixth aspects. In the thirteenth aspect, the plurality of connection objects (P10) include a first connection object (P11) joined to the first connection portion (511) and a second connection object (P11) joined to the second connection portion (512). 2 connection target (P12). The plurality of joint members (60) includes a first joint member (61) that joins the first connection portion (511) and the first connection object (P11), the second connection portion (512) and the and a second joint member (62) that joins the second connection object (P12). Assuming that the thickness of the first joint member (61) is T1 and the thickness of the second joint member (62) is T2, T1>T2. According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

A fourteenth aspect is a semiconductor device (10; 10A; 10B) based on the thirteenth aspect. In the fourteenth aspect, the plurality of connection objects (P10) includes a third connection object (P13) joined to the third connection portion (513). The plurality of joint members (60) includes a third joint member (63) that joins the third connection portion (513) and the third connection object (P13). Assuming that the thickness of the third joint member (63) is T3, T1>T3. According to this aspect, the reliability of the electrical connection by the busbars (50; 50A; 50B) can be improved.

A fifteenth aspect is a semiconductor device (10; 10A; 10B) based on any one of the first to fourteenth aspects. In a fifteenth aspect, the semiconductor device (10; 10A; 10B) further includes a body (80) housing the circuit section (20) and the busbars (50; 50A; 50B). The busbars (50; 50A; 50B) are not supported by the body (80). According to this aspect, the busbars (50; 50A; 50B) are less likely to be affected by changes in position between the body (80) and the circuit section (20) (especially changes in position in the thickness direction of the semiconductor device). Become.

10, 10A, 10B semiconductor device 20 circuit section 30 mounting substrate 30a mounting surface 310 insulating substrate 310a first surface 310b second surface 320 first conductor layer 330 second conductor layer 340 electrode 40 semiconductor chip 41 first semiconductor chip 42 second second Semiconductor chip P10 Connection object P11 First connection object P12 Second connection object P13 Third connection object 50, 50A, 50B Bus bar 51 Connection part 511 First connection part 512 Second connection part (inner connection part)
513 third connecting portion 515 outer connecting portion 52 connecting portion 60 joining member 61 first joining member 62 second joining member 63 third joining member 80 body

Claims (15)

a mounting substrate having a mounting surface, and a circuit section having a semiconductor chip arranged on the mounting surface of the mounting substrate;
a bus bar having a plurality of connection portions connected to a plurality of connection objects on the mounting surface via a plurality of conductive joint members, and a connecting portion connecting the plurality of connection portions;
with
the plurality of connecting portions includes a first connecting portion and second and third connecting portions on both sides of the first connecting portion in the length direction of the connecting portion;
the first connection portion is farther from the mounting surface than the second and third connection portions;
semiconductor device. The plurality of connecting portions includes an outer connecting portion on the opposite side of the second or third connecting portion from the first connecting portion in the length direction of the connecting portion.
2. The semiconductor device of claim 1. wherein the plurality of connecting portions includes an inner connecting portion between the second and third connecting portions along the length of the connecting portion;
3. The semiconductor device according to claim 1 or 2. The connecting part is linear,
A semiconductor device according to any one of claims 1 to 3. The mounting board has a length,
The length direction of the connecting portion matches the length direction of the mounting substrate,
A semiconductor device according to any one of claims 1 to 4. The mounting board is
an insulating substrate;
a first conductor layer formed on a first surface in the thickness direction of the insulating substrate;
a second conductor layer formed on the second surface in the thickness direction of the insulating substrate;
including
a surface of the first conductor layer opposite to the insulating substrate constitutes the mounting surface;
The first conductor layer has a smaller volume than the second conductor layer,
A semiconductor device according to any one of claims 1 to 5. D1 is the amount of protrusion of the first connection portion from the connection portion toward the mounting surface;
Assuming that the amount of protrusion of the second connecting portion from the connecting portion toward the mounting surface side is D2,
D1<D2,
The semiconductor device according to any one of claims 1-6. Assuming that the amount of protrusion of the third connecting portion from the connecting portion toward the mounting surface side is D3,
D1<D3,
8. The semiconductor device of claim 7. The plurality of connection objects includes a first connection object joined to the first connection portion and a second connection object joined to the second connection portion,
D1 is the amount of protrusion of the first connection portion from the connection portion toward the mounting surface;
H1 is the amount of protrusion of the first connection target from the mounting surface;
D2 is the amount of protrusion of the second connection portion from the connecting portion toward the mounting surface;
Assuming that the amount of protrusion of the second connection target from the mounting surface is H2,
D1+H1<D2+H2,
The semiconductor device according to any one of claims 1-6. The circuit section has a plurality of the semiconductor chips arranged on the mounting surface,
The plurality of semiconductor chips includes a first semiconductor chip to be the first connection target and a second semiconductor chip to be the second connection target,
H1 is the distance from the mounting surface to the surface of the first semiconductor chip that is bonded to the first connecting portion;
H2 is the distance from the mounting surface to the surface of the second semiconductor chip that is bonded to the second connecting portion;
10. The semiconductor device of claim 9. The plurality of connection objects include a third connection object joined to the third connection portion,
D3 is the amount of protrusion of the third connecting portion from the connecting portion toward the mounting surface side;
Assuming that the amount of protrusion of the third connection target from the mounting surface is H3,
D1+H1<D3+H3,
11. The semiconductor device according to claim 9 or 10. the third connection object is an electrode exposed on the mounting surface;
H3 is 0;
12. The semiconductor device of claim 11. The plurality of connection objects includes a first connection object joined to the first connection portion and a second connection object joined to the second connection portion,
The plurality of joint members include a first joint member that joins the first connection portion and the first connection object, and a second joint member that joins the second connection portion and the second connection object. ,
the thickness of the first joint member is T1;
Assuming that the thickness of the second joint member is T2,
T1>T2,
The semiconductor device according to any one of claims 1-6. The plurality of connection objects include a third connection object joined to the third connection portion,
the plurality of joint members include a third joint member that joins the third connection portion and the third connection object;
Assuming that the thickness of the third joint member is T3,
T1>T3,
14. The semiconductor device of claim 13. further comprising a body that accommodates the circuit unit and the bus bar;
The busbar is not supported by the body,
The semiconductor device according to any one of claims 1-14.

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