JP2022039090A - Substrate processing device and substrate processing method - Google Patents

Abstract

ABSTRACT: To provide a technique which improves the throughput of a substrate processing device.SOLUTION: The substrate processing device includes a joining device, a transfer device, and a control device. The joining device joins a first substrate and a second substrate to make an overlaid substrate. The joining device includes a first holding unit, a second holding unit, and a movement mechanism. The first holding unit holds the first substrate from above. The second holding unit holds the second substrate from below. The movement mechanism moves the relative position of the first holding unit and the second holding unit between a substrate delivery position and a junction position. After the transfer device starts to move from a substrate carrying-in/out position relative to the joining device, and either simultaneously with the return of the relative position of the first holding unit and the second holding unit to the substrate delivery position or before the return, the control device causes the transfer device to arrive at the substrate carrying-in/out position.SELECTED DRAWING: Figure 14

Description

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

In the joining system described in Patent Documents 1 to 3, a first substrate and a second substrate are joined to prepare a polymerized substrate. The joining system includes a surface modifying device, a surface hydrophilization device, a joining device, and a transfer device. The surface reformer modifies the first substrate and the second substrate. The surface hydrophilization device hydrophilizes the modified first substrate and second substrate. The joining device joins the hydrophilized first substrate and the second substrate to prepare a polymerized substrate. The transport device transports the first substrate, the second substrate, and the polymerization substrate.

Japanese Unexamined Patent Publication No. 2018-10922 Japanese Unexamined Patent Publication No. 2018-26414 Japanese Unexamined Patent Publication No. 2018-93018

One aspect of the present disclosure provides a technique for improving the throughput of a substrate processing apparatus.

The substrate processing device according to one aspect of the present disclosure includes a joining device, a transport device, and a control device. The joining device joins the first substrate and the second substrate to produce a polymerized substrate. The transport device carries in the first substrate and the second substrate to the joining device, and carries out the polymerized substrate. The control device controls the joining device and the transport device. The joining device includes a first holding portion, a second holding portion, a moving mechanism, a pushing portion, and a displacement detecting portion. The first holding portion holds the first substrate from above. The second holding portion holds the second substrate from below. The moving mechanism moves the relative position between the first holding portion and the second holding portion between the substrate delivery position and the joining position. The pushing portion pushes down the center of the first substrate arranged at a distance from the second substrate and brings it into contact with the second substrate. The displacement detecting unit detects a downward displacement of the first substrate with respect to the first holding portion at a point away from the center of the first substrate. The control device at least pushes down the first substrate by the pushing unit, detects the displacement by the displacement detecting unit, and starts moving the relative position from the joining position to the substrate delivery position by the moving mechanism. Using one as a trigger, the transfer device is started to move toward the substrate loading / unloading position with respect to the joining device.

According to one aspect of the present disclosure, the throughput of the substrate processing apparatus can be improved.

FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment. FIG. 2 is a front view of the substrate processing apparatus of FIG. FIG. 3 is a side view showing an example of the first substrate and the second substrate. FIG. 4 is a flowchart showing a substrate processing method according to an embodiment. FIG. 5 is a side view showing an example of the transport device. FIG. 6 is a side view showing an example of the position adjusting device. FIG. 7 is a plan view showing an example of the joining device. FIG. 8 is a front sectional view of the joining device of FIG. 7. 9 is a front sectional view showing the first holding portion and the second holding portion of FIG. 7. FIG. FIG. 10 is a flowchart showing the details of step S109 of FIG. 11 (A) is a cross-sectional view showing an example at the start of progress of joining, FIG. 11 (B) is a cross-sectional view showing an example of progress of joining, and FIG. 11 (C) is a cross-sectional view at the time of completion of progress of joining. It is sectional drawing which shows an example. FIG. 12 is a plan view showing an example of the anisotropy of the progress rate of joining. FIG. 13 is a cross-sectional view showing an example of a nozzle. FIG. 14 is a flowchart showing a first example of timing for transmitting a preparation command to the transport device. FIG. 15 is a flowchart showing a second example of the timing of transmitting the preparation command to the transport device. FIG. 16 is a flowchart showing a third example of timing for transmitting a preparation command to the transport device.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding configurations may be designated by the same reference numerals and description thereof may be omitted. Further, the X-axis direction, the Y-axis direction and the Z-axis direction are directions perpendicular to each other, the X-axis direction and the Y-axis direction are the horizontal direction, and the Z-axis direction is the vertical direction.

First, the substrate processing apparatus 1 according to the present embodiment will be described with reference to FIGS. 1 and 2. The substrate processing apparatus 1 joins the first substrate W1 and the second substrate W2 to produce a polymerization substrate T. The first substrate W1 is a substrate in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. Further, the second substrate W2 is, for example, a bare wafer on which an electronic circuit is not formed. The second substrate W2 may also be a substrate on which an electronic circuit is formed, similarly to the first substrate W1. The first substrate W1 and the second substrate W2 have substantially the same diameter. The compound semiconductor wafer is not particularly limited, and is, for example, a GaAs wafer, a SiC wafer, a GaN wafer, or an InP wafer.

Hereinafter, the first substrate W1 may be referred to as “upper wafer W1”, the second substrate W2 may be referred to as “lower wafer W2”, and the polymerization substrate T may be referred to as “polymerization wafer T”. As shown in FIG. 3, among the plate surfaces of the upper wafer W1, the plate surface on the side to be bonded to the lower wafer W2 is described as "bonding surface W1j", and the plate surface on the side opposite to the bonding surface W1j is "non-". It is described as "joint surface W1n". Further, among the plate surfaces of the lower wafer W2, the plate surface on the side to be bonded to the upper wafer W1 is described as "bonding surface W2j", and the plate surface on the side opposite to the bonding surface W2j is referred to as "non-bonding surface W2n". Describe.

As shown in FIG. 1, the substrate processing device 1 includes an loading / unloading station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are arranged side by side in the order of the carry-in / out station 2 and the processing station 3 along the positive direction of the X-axis. Further, the loading / unloading station 2 and the processing station 3 are integrally connected.

The loading / unloading station 2 includes a mounting table 10 and a transport area 20. The mounting table 10 includes a plurality of mounting plates 11. Cassettes C1, C2, and C3 for horizontally accommodating a plurality of (for example, 25) substrates are mounted on each mounting plate 11. The cassette C1 is a cassette accommodating the upper wafer W1, the cassette C2 is a cassette accommodating the lower wafer W2, and the cassette C3 is a cassette accommodating the polymerized wafer T. In the cassettes C1 and C2, the upper wafer W1 and the lower wafer W2 are housed in the same orientation with the joining surfaces W1j and W2j facing up, respectively.

The transport area 20 is arranged adjacent to the X-axis positive direction side of the mounting table 10. The transport area 20 is provided with a transport path 21 extending in the Y-axis direction and a transport device 22 movable along the transport path 21. The transfer device 22 is movable in the X-axis direction and can be swiveled around the Z-axis, and has cassettes C1 to C3 mounted on the mounting table 10 and a third processing block G3 of the processing station 3 described later. The upper wafer W1, the lower wafer W2, and the polymerized wafer T are transferred between them.

The number of cassettes C1 to C3 mounted on the mounting table 10 is not limited to those shown in the figure. Further, on the mounting table 10, in addition to the cassettes C1, C2, and C3, a cassette or the like for collecting the defective substrate may be mounted.

The processing station 3 is provided with, for example, three processing blocks G1, G2, and G3. For example, the first processing block G1 is provided on the back side of the processing station 3 (the Y-axis positive direction side in FIG. 1), and the second processing block G1 is provided on the front side of the processing station 3 (the Y-axis negative direction side in FIG. 1). The processing block G2 is provided. Further, a third processing block G3 is provided on the loading / unloading station 2 side (X-axis negative direction side in FIG. 1) of the processing station 3.

Further, a transport region 60 is formed in the region surrounded by the first processing block G1 to the third processing block G3. A transport device 61 is arranged in the transport region 60. The transport device 61 has, for example, a transport arm that is movable in the vertical direction, the horizontal direction, and around the vertical axis. The details of the transport device 61 will be described later with reference to FIG.

The transfer device 61 moves in the transfer area 60, and the upper wafer W1, the lower wafer W2, and the predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transfer area 60 The polymerized wafer T is conveyed.

A surface modification device 33 and a surface hydrophilization device 34 are arranged in the first treatment block G1. The surface modifying device 33 modifies the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2. The surface hydrophilization device 34 hydrophilizes the modified joint surface W1j of the upper wafer W1 and the joint surface W2j of the lower wafer W2.

For example, the surface modification device 33 breaks the bond of SiO ₂ on the joint surfaces W1j and W2j to form an unbonded hand of Si, and enables subsequent hydrophilization. In the surface reforming apparatus 33, for example, oxygen gas, which is a processing gas, is excited to be turned into plasma and ionized in a reduced pressure atmosphere. Then, by irradiating the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 with oxygen ions, the bonding surfaces W1j and W2j are plasma-treated and reformed. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.

The surface hydrophilization device 34 hydrophilizes the joint surface of the upper wafer W1 and W2j of the lower wafer W2 with a hydrophilization treatment liquid such as pure water. The surface hydrophilization device 34 also has a role of cleaning the joint surfaces W1j and W2j. In the surface hydrophilization device 34, for example, pure water is supplied onto the upper wafer W1 or the lower wafer W2 while rotating the upper wafer W1 or the lower wafer W2 held by the spin chuck. As a result, pure water diffuses on the joint surfaces W1j and W2j, OH groups are attached to the unbonded hands of Si, and the joint surfaces W1j and W2j are hydrophilized.

A joining device 41 and a substrate temperature controlling device 42 are arranged in the second processing block G2. The joining device 41 joins the hydrophilized upper wafer W1 and the lower wafer W2 to produce a polymerized wafer T. The substrate temperature control device 42 adjusts the temperature of the upper wafer W1 before joining and the lower wafer W2 before joining, respectively. The details of the joining device 41 will be described later with reference to FIGS. 7 to 9.

As shown in FIG. 2, the position adjusting device 51 and the transition devices 53 and 54 are stacked and arranged in this order on the third processing block G3 from the upper side to the lower side. The placement location of each device in the third processing block G3 is not limited to the placement location shown in FIG. The position adjusting device 51 adjusts the horizontal orientation of the upper wafer W1 and the lower wafer W2. Further, the position adjusting device 51 turns the upper wafer W1 upside down and turns the joining surface W1j of the upper wafer W1 downward. The upper wafer W1 is temporarily placed on the transition device 53. Further, the lower wafer W2 and the polymerization wafer T are temporarily placed on the transition device 54.

The board processing device 1 includes a control device 90. The control device 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs that control various processes executed by the substrate processing device 1. The control device 90 controls the operation of the board processing device 1 by causing the CPU 91 to execute the program stored in the storage medium 92.

Next, the substrate processing method of the present embodiment will be described with reference to FIG. Steps S101 to S109 shown in FIG. 4 are carried out under the control of the control device 90.

First, the cassette C1 containing the plurality of upper wafers W1, the cassette C2 containing the plurality of lower wafers W2, and the empty cassette C3 are placed on the mounting table 10 of the loading / unloading station 2.

Next, the transfer device 22 takes out the upper wafer W1 in the cassette C1 and transfers it to the transition device 53 of the third processing block G3 of the processing station 3. After that, the transfer device 61 takes out the upper wafer W1 from the transition device 53 and transfers it to the surface reforming device 33 of the first processing block G1.

Next, the surface reforming apparatus 33 reforms the joint surface W1j of the upper wafer W1 (step S101). The modification of the joint surface W1j is carried out with the joint surface W1j facing upward. After that, the transfer device 61 takes out the upper wafer W1 from the surface reforming device 33 and transfers it to the surface hydrophilization device 34.

Next, the surface hydrophilization device 34 hydrophilizes the joint surface W1j of the upper wafer W1 (step S102). Hydrophilization of the joint surface W1j is carried out with the joint surface W1j facing upward. After that, the transfer device 61 takes out the upper wafer W1 from the surface hydrophilization device 34 and transfers it to the position adjusting device 51 of the third processing block G3.

Next, the position adjusting device 51 adjusts the horizontal direction of the upper wafer W1 and turns the upper wafer W1 upside down (step S103). As a result, the notch N (see FIG. 12) of the upper wafer W1 is oriented in a predetermined direction, and the bonding surface W1j of the upper wafer W1 is directed downward. After that, the transfer device 61 takes out the upper wafer W1 from the position adjusting device 51 and transfers it to the substrate temperature control device 42 of the second processing block G2.

Next, the substrate temperature control device 42 adjusts the temperature of the upper wafer W1 (step S104). The temperature control of the upper wafer W1 is performed with the joining surface W1j of the upper wafer W1 facing downward. After that, the transfer device 61 takes out the upper wafer W1 from the substrate temperature control device 42 and transfers it to the joining device 41.

In parallel with the above processing for the upper wafer W1, the following processing for the lower wafer W2 is performed. First, the transfer device 22 takes out the lower wafer W2 in the cassette C2 and transfers it to the transition device 54 of the third processing block G3 of the processing station 3. After that, the transfer device 61 takes out the lower wafer W2 from the transition device 54 and transfers it to the surface reforming device 33 of the first processing block G1.

Next, the surface reforming apparatus 33 reforms the joint surface W2j of the lower wafer W2 (step S105). The modification of the joint surface W2j is carried out with the joint surface W2j facing up. After that, the transport device 61 takes out the lower wafer W2 from the surface reforming device 33 and transports it to the surface hydrophilization device 34.

Next, the surface hydrophilization device 34 hydrophilizes the joint surface W2j of the lower wafer W2 (step S106). Hydrophilization of the joint surface W2j is carried out with the joint surface W2j facing upward. After that, the transfer device 61 takes out the lower wafer W2 from the surface hydrophilization device 34 and transfers it to the position adjusting device 51 of the third processing block G3.

Next, the position adjusting device 51 adjusts the horizontal orientation of the lower wafer W2 (step S107). As a result, the notch N of the lower wafer W2 is oriented in a predetermined direction. After that, the transfer device 61 takes out the lower wafer W2 from the position adjusting device 51 and transfers it to the substrate temperature control device 42 of the second processing block G2.

Next, the substrate temperature control device 42 adjusts the temperature of the lower wafer W2 (step S108). The temperature control of the lower wafer W2 is performed with the joint surface W2j of the lower wafer W2 facing upward. After that, the transfer device 61 takes out the lower wafer W2 from the substrate temperature control device 42 and transfers it to the joining device 41.

Next, the joining device 41 joins the upper wafer W1 and the lower wafer W2 to prepare a polymerized wafer T (step S109). After that, the transfer device 61 takes out the polymerized wafer T from the joining device 41 and transfers it to the transition device 54 of the third processing block G3.

Finally, the transfer device 22 takes out the polymerized wafer T from the transition device 54 and transfers it to the cassette C3 on the mounting table 10. This ends a series of processes.

Next, an example of the transport device 61 will be described with reference to FIG. The transport device 61 includes a first holding unit 62a, a second holding unit 62b provided below the first holding unit 62a, and a first driving unit 64. The first holding portion 62a is arranged above the second holding portion 62b so as to face each other. The second holding portion 62b holds the upper wafer W1 with the joining surface W1j of the upper wafer W1 facing upward before step S103. On the other hand, the first holding portion 62a holds the upper wafer W1 after the step S103 and before the step S109 with the joining surface W1j of the upper wafer W1 facing downward. Further, the second holding portion 62b holds the lower wafer W2 with the joining surface W2j of the lower wafer W2 facing upward before the step S109.

The first holding portion 62a is connected to the vacuum pump 62a2 via the suction pipe 62a1, and the upper wafer W1 is vacuum-sucked by the operation of the vacuum pump 62a2. On the other hand, the second holding portion 62b is connected to the vacuum pump 62b2 via the suction pipe 62b1, and the lower wafer W2 is vacuum-sucked by the operation of the vacuum pump 62b2.

The first driving unit 64 is connected to the first holding unit 62a and the second holding unit 62b. The first driving unit 64 drives the first holding unit 62a and the second holding unit 62b, and integrally moves the first holding unit 62a and the second holding unit 62b in the vertical direction, the horizontal direction, and around the vertical axis with respect to the base 65. Although not shown, the first drive unit 64 includes a drive source such as a motor and a power transmission mechanism such as a belt.

When the upper wafer W1 and the lower wafer W2 are conveyed to the joining device 41, the transfer device 61 holds the upper wafer W1 by the first holding portion 62a and holds the lower wafer W2 by the second holding portion 62b. Two upper wafers W1 and two lower wafers W2 are conveyed together.

Further, the transport device 61 further includes a third holding unit 62c, a fourth holding unit 62d, and a second driving unit 66. The fourth holding portion 62d is arranged above the third holding portion 62c so as to face each other. After the step S109, the third holding portion 62c holds the polymerized wafer T with the upper wafer W1 facing upward. On the other hand, the fourth holding unit 62d holds the test wafer.

The third holding portion 62c is connected to the vacuum pump 62c2 via the suction pipe 62c1, and for example, the polymerized wafer T is vacuum-sucked by the operation of the vacuum pump 62c2. A vacuum pump 62d2 is connected to the fourth holding portion 62d via a suction pipe 62d1, and the test wafer is vacuum-sucked by the operation of the vacuum pump 62d2.

The second drive unit 66 is connected to the third holding unit 62c and the fourth holding unit 62d. The second driving unit 66 drives the third holding unit 62c and the fourth holding unit 62d, and integrally moves the third holding unit 62c and the fourth holding unit 62d in the vertical direction, the horizontal direction, and around the vertical axis with respect to the base 65. Although not shown, the second drive unit 66 includes a drive source such as a motor and a power transmission mechanism such as a belt.

In the transport device 61, the upper wafer W1 and the lower wafer W2 are carried into the joining device 41 by the first holding section 62a and the second holding section 62b, and the polymerized wafer T is carried out to the joining device 41 by the third holding section 62c. I do. The loading of the polymerized wafer T produced by the n (n is a natural number of 1 or more) times and the loading of the upper wafer W1 and the lower wafer W2 joined by the n + 1th bonding are continuously performed. The configuration of the transport device 61 is not limited to the configuration shown in FIG.

Next, an example of the position adjusting device 51 will be described with reference to FIG. The position adjusting device 51 includes a base 51a, a holding unit 51b that attracts and holds the upper wafer W1 and the lower wafer W2 to rotate, and a detection unit 51c that detects the positions of the notches N of the upper wafer W1 and the lower wafer W2. It has a base reversing portion 51d for reversing the base 51a.

The position of the notch N is adjusted by the detection unit 51c detecting the position of the notch N of the upper wafer W1 while the holding portion 51b sucks and holds the upper wafer W1 and rotates the upper wafer W1, and the horizontal orientation of the upper wafer W1. Is adjusted. The horizontal orientation of the lower wafer W2 is adjusted in the same manner.

The base reversing portion 51d is provided with, for example, a motor or the like, the base 51a is turned upside down, and the upper wafer W1 held by the holding portion 51b is turned upside down. As a result, the joint surface W1j of the upper wafer W1 faces downward.

Next, an example of the joining device 41 will be described with reference to FIGS. 7 to 9. As shown in FIG. 7, the joining device 41 has a processing container 210 whose inside can be sealed. A carry-in outlet 211 is formed on the side surface of the processing container 210 on the transport region 60 side, and an open / close shutter 212 is provided at the carry-in outlet 211. The upper wafer W1, the lower wafer W2, and the polymerized wafer T are carried in and out via the carry-in outlet 211.

As shown in FIG. 8, the upper chuck 230 and the lower chuck 231 are inside the processing container 210.
And are provided. The upper chuck 230 holds the upper wafer W1 from above with the joining surface W1j of the upper wafer W1 facing downward. Further, the lower chuck 231 is provided below the upper chuck 230, and holds the lower wafer W2 from below with the joining surface W2j of the lower wafer W2 facing upward.

The upper chuck 230 is supported by a support member 280 provided on the ceiling surface of the processing container 210. On the other hand, the lower chuck 231 is supported by the first lower chuck moving portion 291 provided below the lower chuck 231.

The first lower chuck moving unit 291 moves the lower chuck 231 in the horizontal direction (Y-axis direction) as described later. Further, the first lower chuck moving portion 291 is configured so that the lower chuck 231 can be moved in the vertical direction and can be rotated around the vertical axis.

The first lower chuck moving portion 291 is provided on the lower surface side of the first lower chuck moving portion 291 and is attached to a pair of rails 295 extending in the horizontal direction (Y-axis direction). The first lower chuck moving portion 291 is configured to be movable along the rail 295. The rail 295 is provided on the second lower chuck moving portion 296.

The second lower chuck moving portion 296 is provided on the lower surface side of the second lower chuck moving portion 296, and is attached to a pair of rails 297 extending in the horizontal direction (X-axis direction). The second lower chuck moving portion 296 is configured to be movable along the rail 297, that is, to move the lower chuck 231 in the horizontal direction (X-axis direction). The pair of rails 297 are provided on a mounting table 298 provided on the bottom surface of the processing container 210.

The first lower chuck moving portion 291 and the second lower chuck moving portion 296 form a moving mechanism 290. The moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 between the substrate delivery position and the joining position.

The substrate delivery position is such that the upper chuck 230 receives the upper wafer W1 from the transfer device 61, the lower chuck 231 receives the lower wafer W2 from the transfer device 61, and the lower chuck 231 transfers the polymerized wafer T to the transfer device 61. be. At the substrate delivery position, the carry-out of the polymerized wafer T produced by the n (n is a natural number of 1 or more) times and the carry-in of the upper wafer W1 and the lower wafer W2 joined by the n + 1th joining are continuous. The position where it will be done. The substrate delivery position is, for example, the position shown in FIGS. 7 and 8.

When the upper wafer W1 is passed to the upper chuck 230, the transfer device 61 enters directly below the upper chuck 230. Further, the transfer device 61 receives the polymerized wafer T from the lower chuck 231 and penetrates directly above the lower chuck 231 when the lower wafer W2 is passed to the lower chuck 231. The upper chuck 230 and the lower chuck 231 are laterally displaced so that the transport device 61 can easily enter, and the vertical distance between the upper chuck 230 and the lower chuck 231 is also large.

On the other hand, the joining position is a position where the upper wafer W1 and the lower wafer W2 face each other at a predetermined interval and are joined. The joining position is, for example, the position shown in FIG. At the joining position, the distance between the upper wafer W1 and the lower wafer W2 in the vertical direction is narrower than that at the substrate delivery position. Further, at the joining position, unlike the substrate delivery position, the upper wafer W1 and the lower wafer W2 overlap each other in the vertical direction.

The moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 in the horizontal direction (both in the X-axis direction and the Y-axis direction) and in the vertical direction. In the present embodiment, the moving mechanism 290 moves the lower chuck 231. However, either the lower chuck 231 or the upper chuck 230 may be moved, or both may be moved. Further, the moving mechanism 290 may rotate the upper chuck 230 or the lower chuck 231 around a vertical axis.

As shown in FIG. 9, the upper chuck 230 is divided into a plurality of (for example, three) regions 230a, 230b, 230c. These regions 230a, 230b, 230c are provided in this order from the central portion to the peripheral portion of the upper chuck 230. The regions 230a have a circular shape in a plan view, and the regions 230b and 230c have an annular shape in a plan view.

Suction tubes 240a, 240b, 240c are independently provided in each of the regions 230a, 230b, 230c. Different vacuum pumps 241a, 241b, 241c are connected to the suction pipes 240a, 240b, 240c, respectively. The upper chuck 230 can vacuum-adsorb the upper wafer W1 for each region 230a, 230b, 230c.

The upper chuck 230 is provided with a plurality of holding pins 245 that can be raised and lowered in the vertical direction. The plurality of holding pins 245 are connected to the vacuum pump 246, and the upper wafer W1 is vacuum-sucked by the operation of the vacuum pump 246. The upper wafer W1 is vacuum-sucked to the lower ends of the plurality of holding pins 245.

The plurality of holding pins 245 project from the holding surface of the upper chuck 230 by lowering. In that state, the plurality of holding pins 245 vacuum-suck the upper wafer W1 and receive it from the transfer device 61. After that, the plurality of holding pins 245 are raised, and the upper wafer W1 is brought into contact with the holding surface of the upper chuck 230. Subsequently, the upper chuck 230 horizontally vacuum-sucks the upper wafer W1 in each region 230a, 230b, 230c by the operation of the vacuum pumps 241a, 241b, 241c.

Further, a through hole 243 that penetrates the upper chuck 230 in the vertical direction is formed in the central portion of the upper chuck 230. A pushing portion 250, which will be described later, is inserted through the through hole 243. The pushing portion 250 pushes down the center of the upper wafer W1 arranged at a distance from the lower wafer W2 and brings it into contact with the lower wafer W2.

The push unit 250 has a push pin 251 and an outer cylinder 252 that is an elevating guide for the push pin 251. The push pin 251 is inserted into the through hole 243 by, for example, a drive unit (not shown) having a built-in motor, protrudes from the holding surface of the upper chuck 230, and pushes down the center of the upper wafer W1.

The lower chuck 231 is divided into a plurality of (for example, two) regions 231a and 231b. These regions 231a and 231b are provided in this order from the central portion to the peripheral portion of the lower chuck 231. The region 231a has a circular shape in a plan view, and the region 231b has an annular shape in a plan view.

Suction tubes 260a and 260b are independently provided in each region 231a and 231b. Different vacuum pumps 261a and 261b are connected to the suction pipes 260a and 260b, respectively. The lower chuck 231 can vacuum-adsorb the lower wafer W2 for each region 231a and 231b.

The lower chuck 231 is provided with a plurality of holding pins 265 that can be raised and lowered in the vertical direction. The lower wafer W2 is placed on the upper ends of the plurality of holding pins 265. The lower wafer W2 may be vacuum-sucked to the upper ends of the plurality of holding pins 265.

The plurality of holding pins 265 project from the holding surface of the lower chuck 231 by rising. In that state, the plurality of holding pins 265 receive the lower wafer W2 from the transfer device 61. After that, the plurality of holding pins 265 are lowered, and the lower wafer W2 is brought into contact with the holding surface of the lower chuck 231. Subsequently, the upper chuck 230 horizontally vacuum-sucks the lower wafer W2 in each of the regions 231a and 231b by the operation of the vacuum pumps 261a and 261b.

Next, the details of step S109 in FIG. 4 will be described mainly with reference to FIGS. 10 and 11. First, the transport device 61 carries in the upper wafer W1 and the lower wafer W2 to the joining device 41 at the substrate loading / unloading position shown by the alternate long and short dash line in FIG. 7 (step S111). The substrate loading / unloading position is a position outside the processing container 210 and adjacent to the loading / unloading port 211 of the processing container 210. In step S111, the relative positions of the upper chuck 230 and the lower chuck 231 are the substrate delivery positions shown in FIGS. 7 and 8.

Specifically, first, the transport device 61 carries the upper wafer W1 directly under the upper chuck 230. Subsequently, a plurality of holding pins 245 descend to receive the upper wafer W1 from the transfer device 61. After that, the plurality of holding pins 245 are raised, and the upper wafer W1 is brought into contact with the holding surface of the upper chuck 230. Subsequently, the upper chuck 230 holds the upper wafer W1 from above.

Next, the transfer device 61 carries the lower wafer W2 directly above the lower chuck 231. Subsequently, a plurality of holding pins 265 are raised to receive the lower wafer W2 from the transfer device 61. After that, the plurality of holding pins 265 are lowered, and the lower wafer W2 is brought into contact with the holding surface of the lower chuck 231. Subsequently, the lower chuck 231 holds the lower wafer W2 from below.

Next, the moving mechanism 290 moves the relative positions of the upper chuck 230 and the lower chuck 231 from the substrate delivery position shown in FIGS. 7 and 8 to the joining position shown in FIG. 9 (step S112). As a result, the upper wafer W1 and the lower wafer W2 are arranged so as to face each other at a predetermined interval. The interval is, for example, 80 μm to 200 μm. Further, the alignment mark of the upper wafer W1 and the alignment mark of the lower wafer W2 overlap each other in the vertical direction.

Next, the operation of the vacuum pump 241a is stopped, and as shown in FIG. 11A, the vacuum suction of the upper wafer W1 in the region 230a is released. After that, the push pin 251 of the push portion 250 is lowered to push down the center of the upper wafer W1 and bring it into contact with the lower wafer W2 (step S113). As a result, the centers of the upper wafer W1 and the lower wafer W2 are joined to each other.

Since the joint surface W1j of the upper wafer W1 and the joint surface W2j of the lower wafer W2 are modified respectively, van der Waals force (intramolecular force) is first generated between the joint surfaces W1j and W2j, and the joint surface W1j, W2j are joined to each other. Further, since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 have already been hydrophilized, hydrophilic groups (for example, OH groups) are hydrogen-bonded, and the bonding surfaces W1j and W2j are firmly bonded to each other. ..

Next, the operation of the vacuum pump 241b is stopped, and as shown in FIG. 11B, the vacuum suction of the upper wafer W1 in the region 230b is released. Subsequently, the operation of the vacuum pump 241c is stopped, and as shown in FIG. 11C, the vacuum suction of the upper wafer W1 in the region 230c is released.

In this way, the vacuum suction of the upper wafer W1 is gradually released from the center of the upper wafer W1 toward the peripheral edge, and the upper wafer W1 gradually drops and abuts on the lower wafer W2. Then, the joining of the upper wafer W1 and the lower wafer W2 proceeds sequentially from the center to the peripheral edge (step S114). As a result, the joining surface W1j of the upper wafer W1 and the joining surface W2j of the lower wafer W2 are in contact with each other on the entire surface, and the upper wafer W1 and the lower wafer W2 are joined to obtain a polymerized wafer T. After that, the push pin 251 is raised to the original position.

Next, the moving mechanism 290 moves the relative position of the upper chuck 230 and the lower chuck 231 from the joining position shown in FIG. 9 to the substrate delivery position shown in FIGS. 7 and 8 (step S115). For example, the moving mechanism 290 first lowers the lower chuck 231 to widen the vertical distance between the lower chuck 231 and the upper chuck 230. Subsequently, the moving mechanism 290 moves the lower chuck 231 laterally, and shifts the lower chuck 231 and the upper chuck 230 laterally.

Next, the transport device 61 carries out the polymerized wafer T to the joining device 41 at the substrate loading / unloading position shown by the alternate long and short dash line in FIG. 7 (step S116). Specifically, first, the lower chuck 231 releases the holding of the polymerized wafer T. Subsequently, a plurality of holding pins 265 are raised to pass the polymerized wafer T to the transfer device 61. After that, the plurality of holding pins 265 are lowered to their original positions.

In addition, the transport device 61 continuously carries out the carry-out of the polymerized wafer T manufactured by the n (n is a natural number of 1 or more) times and the carry-in of the upper wafer W1 and the lower wafer W2 joined by the n + 1th joining. And do it.

Next, an example of the displacement detection unit 220 will be described with reference to FIGS. 12 and 13. The displacement detection unit 220 detects the downward displacement of the upper wafer W1 with respect to the upper chuck 230 at a point away from the center of the upper wafer W1. The displacement detection unit 220 may detect the detachment of the upper wafer W1 from the upper chuck 230, or may detect the contact between the upper wafer W1 and the lower wafer. There is a time lag between the time when the upper wafer W1 is separated from the upper chuck 230 and the time when the upper wafer W1 comes into contact with the lower wafer W2. When the upper wafer W1 abuts on the lower wafer W2, the distance between the upper wafer W1 and the lower wafer W2 becomes a predetermined distance.

The displacement detection unit 220 measures the distance between the upper chuck 230 and the upper wafer W1. For example, as shown in FIG. 13, the displacement detection unit 220 includes a nozzle 221 that sucks or discharges gas. The tip of the nozzle 221 is arranged above the holding surface of the upper chuck 230 and is arranged at a distance from the upper wafer W1.

The displacement detection unit 220 measures the distance between the upper chuck 230 and the upper wafer W1 by detecting the flow rate of the gas in the nozzle 221. Whether the nozzle 221 sucks the gas or the nozzle 221 discharges the gas, the narrower the distance between the upper chuck 230 and the upper wafer W1, the higher the gas flow resistance, and the lower the gas flow rate. The relationship between the gas flow rate and the distance is determined in advance by an experiment, and the data stored in the storage medium 92 is read out and used.

The displacement detection unit 220 may measure the distance between the upper chuck 230 and the upper wafer W1 by ultrasonic waves, light, or an image. For example, the displacement detection unit 220 irradiates the upper wafer W1 with ultrasonic waves or light, receives the reflected wave or the reflected light, and measures the distance between the upper chuck 230 and the upper wafer W1. The measuring method is, for example, a confocal method, a spectral interference method, a triangular distance measuring method, or the like. The light source is an LED, a laser, or the like.

The displacement detection unit 220 may take an image of the upper chuck 230 and the upper wafer W1 from the side, process the image, and measure the distance between the upper chuck 230 and the upper wafer W1.

The displacement detection unit 220 may receive the reflected light from the upper wafer W1 and measure the distance between the upper chuck 230 and the upper wafer W1 by the amount of the light received. The upper wafer W1 becomes slanted on the way from the detachment from the upper chuck 230 to the contact with the lower wafer W2. At this time, the amount of reflected light received is temporarily reduced. The relationship between the amount of reflected light received and the distance is determined in advance by an experiment, and the data stored in the storage medium 92 is read out and used.

The displacement detection unit 220 may measure the distance between the upper chuck 230 and the upper wafer W1 by measuring the capacitance between the displacement detection unit 220 and the upper wafer W1. The narrower the distance between the upper chuck 230 and the upper wafer W1, the narrower the gap between the displacement detection unit 220 and the upper wafer W1, and the larger the capacitance. The relationship between the capacitance and the distance is determined in advance by an experiment, and the data stored in the storage medium 92 is read out and used.

The displacement detection unit 220 measures the distance between the upper chuck 230 and the upper wafer W1, but may simply detect the detachment of the upper wafer W1 with respect to the upper chuck 230. However, there is a time lag between the time when the upper wafer W1 is separated from the upper chuck 230 and the time when the upper wafer W1 comes into contact with the lower wafer W2. When measuring the distance, it is possible to accurately detect the timing at which the upper wafer W1 and the lower wafer W2 come into contact with each other, as compared with the case where the detachment is detected.

As shown in FIG. 12, the progress rate of joining of the upper wafer W1 and the lower wafer W2 may have anisotropy. In FIG. 12, the region A indicated by hatching is a region that has been joined at a certain timing. In FIG. 12, (100) is a surface index, and [0-11], [001], [011] and [010] are directional indexes. A negative Miller index is usually expressed by adding a "-" (bar) above the number, but herein it is expressed by adding a negative sign in front of the number. The Miller index shown in FIG. 12 is for a single crystal silicon wafer.

The progress speed of joining the upper wafer W1 and the lower wafer W2 changes in a 90 ° cycle. This is because the Young's modulus, Poisson's ratio, and shear modulus of a single crystal silicon wafer change in a 90 ° cycle.

As shown in FIG. 12, the displacement detection unit 220 is provided in both the direction in which the joining speed is the fastest and the direction in which the joining speed is the slowest. This makes it possible to detect the anisotropy of the progress rate of joining.

The displacement detection units 220 are provided in a plurality of directions in which the joining speed is the fastest, and detect the downward displacement of the upper wafer W1 at a plurality of points having different distances from the center of the upper wafer W1. This makes it possible to detect the fastest traveling speed.

Further, the displacement detection units 220 are provided in a plurality of directions in which the joining speed is the slowest, and detect the downward displacement of the upper wafer W1 at a plurality of points having different distances from the center of the upper wafer W1. This makes it possible to detect the slowest traveling speed in the same direction.

The displacement detection unit 220 transmits a signal indicating the detection result to the control device 90. The control device 90 monitors the progress of the joining of the upper wafer W1 and the lower wafer W2 from the center to the peripheral edge by using the detection result of the displacement detection unit 220. For example, the control device 90 obtains the progress speed of the joining of the upper wafer W1 and the lower wafer W2 by the plurality of displacement detecting units 220, or determines the success or failure of the joining of the upper wafer W1 and the lower wafer W2.

Next, with reference to FIG. 14, a first example of timing for transmitting a preparation command to the transport device 61 will be described. Steps S201 to S208 shown in FIG. 14 are carried out under the control of the control device 90.

First, the pushing unit 250 starts pushing down the center of the upper wafer W1 (step S201). Specifically, the push pin 251 of the push portion 250 starts to descend. After that, the control device 90 measures the elapsed time from step S201 with a timer.

Next, the control device 90 checks whether or not the set time has elapsed from step S201 (step S202). If the set time has not elapsed (step S202, NO), the control device 90 repeats the above step S202 after the unit time has elapsed.

On the other hand, when the set time has elapsed (step S202, YES), the joining of the upper wafer W1 and the lower wafer W2 has sufficiently progressed, so that the upper chuck 230 releases the holding of the peripheral edge of the upper wafer W1. (Step S203). As a result, the peripheral edge of the upper wafer W1 falls and abuts on the peripheral edge of the lower wafer W2, the progress of joining is completed, and the polymerized wafer T is obtained.

Next, the moving mechanism 290 starts moving the lower chuck 231 (step S204). The lower chuck 231 starts moving from the joining position to the substrate delivery position. First, the lower chuck 231 is lowered and then laterally displaced.

Next, the moving mechanism 290 completes the movement of the lower chuck 231 (step S205). The lower chuck 231 stops at the board delivery position. After that, the polymerized wafer T produced by the nth bonding is carried out continuously, and the upper wafer W1 and the lower wafer W2 joined by the n + 1th bonding are continuously carried in. Hereinafter, these series of operations will also be described as carrying in the upper wafer W1 and the like.

The control device 90 gives a preparation command to the transfer device 61 before the movement of the lower chuck 231 is completed in order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S205) to the start of the loading of the upper wafer W1 and the like. Is sent. Hereinafter, the timing of transmitting the preparation command to the transport device 61 will be described.

First, the control device 90 checks whether or not the set time has elapsed from the start of pushing down by the pushing unit 250 (step S201) (step S206). If the set time has not elapsed (step S206, NO), the control device 90 repeats the above step S206 after the unit time has elapsed.

On the other hand, when the set time has elapsed (step S206, YES), the control device 90 transmits a preparation command to the transport device 61 (step S207). Upon receiving the preparation command, the transfer device 61 takes out the upper wafer W1 and the lower wafer W2 from the substrate temperature control device 42, and starts moving toward the substrate carry-in / out position shown by the two-dot chain line in FIG. 7.

The substrate temperature control device 42 may not be provided. In that case, when the transport device 61 receives the preparation command, the upper wafer W1 and the lower wafer W2 are taken out from the position adjusting device 51 and start moving toward the substrate loading / unloading position shown by the two-dot chain line in FIG. 7.

Next, the transfer device 61 completes the movement to the board loading / unloading position (step S208). If the timing of the completion of movement of the transfer device 61 (step S208) is the same as or before the timing of the completion of movement of the lower chuck 231 (step S205), the waiting time becomes zero and the operating rate of the joining device 41 is improved. ..

As described above, the control device 90 transmits a preparation command to the transfer device 61 triggered by pushing down the upper wafer W1 by the push unit 250 (step S201), and starts moving the transfer device 61 toward the substrate loading / unloading position. Let me. Compared to the case where the transfer device 61 is started to move toward the substrate loading / unloading position after the movement of the lower chuck 231 is completed (step S205), the waiting time from the completion of the movement of the lower chuck 231 to the start of the loading of the upper wafer W1 and the like. Can be shortened, and the throughput of the substrate processing device 1 can be improved.

The control device 90 arrives at the substrate loading / unloading position at the same time as or before the movement of the lower chuck 231 is completed (step S208), that is, at the same time or before the lower chuck 231 returns to the substrate delivery position. The waiting time from the completion of the movement of the lower chuck 231 to the start of the loading of the upper wafer W1 can be made zero, and the throughput of the substrate processing apparatus 1 can be further improved.

After the set time has elapsed from the start of pushing down the upper wafer W1 by the pushing unit 250 (step S201), the control device 90 transmits a preparation command to the transfer device 61, and starts moving the transfer device 61 toward the substrate loading / unloading position. Let me. By appropriately delaying the transmission of the preparation command, it is possible to shorten the waiting time from the completion of the movement of the transfer device 61 (step S208) to the start of the delivery of the upper wafer W1 and the like. Therefore, the operating rate of the transport device 61 can be improved. Further, the temperature change of the upper wafer W1 and the lower wafer W2 can be suppressed.

Next, with reference to FIG. 15, a second example of the timing at which the preparation command is transmitted to the transport device 61 will be described. Steps S301 to S309 shown in FIG. 15 are carried out under the control of the control device 90.

First, the pushing unit 250 starts pushing down the center of the upper wafer W1 (step S301). Specifically, the push pin 251 of the push portion 250 starts to descend.

Next, the displacement detection unit 220 detects the downward displacement of the upper wafer W1 with respect to the upper chuck 230 at a point away from the center of the upper wafer W1 (step S302). The displacement detection unit 220 may detect the detachment of the upper wafer W1 with respect to the upper chuck 230, or may detect the contact between the upper wafer W1 and the lower wafer W2.

After that, the control device 90 measures the elapsed time from step S302 with a timer. The number and combination of the displacement detection units 220 used here are not particularly limited, but are preset and stored in the storage medium 92. When all the preset displacement detection units 220 detect the displacement, the measurement by the timer starts.

Next, the control device 90 checks whether or not the set time has elapsed from step S302 (step S303). If the set time has not elapsed (step S303, NO), the control device 90 repeats the above step S303 after the unit time has elapsed.

On the other hand, when the set time has elapsed (step S303, YES), the bonding between the upper wafer W1 and the lower wafer W2 has sufficiently progressed, so that the upper chuck 230 releases the holding of the peripheral edge of the upper wafer W1. (Step S304). As a result, the peripheral edge of the upper wafer W1 falls and abuts on the peripheral edge of the lower wafer W2, the progress of joining is completed, and the polymerized wafer T is obtained.

Next, the moving mechanism 290 starts moving the lower chuck 231 (step S305). The lower chuck 231 starts moving from the joining position to the substrate delivery position. The lower chuck 231 is lowered and subsequently displaced laterally.

Next, the moving mechanism 290 completes the movement of the lower chuck 231 (step S306). The lower chuck 231 stops at the board delivery position. After that, the polymerized wafer T produced by the nth bonding is carried out continuously, and the upper wafer W1 and the lower wafer W2 joined by the n + 1th bonding are continuously carried in. Hereinafter, these series of operations will also be described as carrying in the upper wafer W1 and the like.

The control device 90 gives a preparation command to the transfer device 61 before the movement of the lower chuck 231 is completed in order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S306) to the start of the loading of the upper wafer W1 and the like. Is sent. Hereinafter, the timing of transmitting the preparation command to the transport device 61 will be described.

First, the control device 90 checks whether or not the set time has elapsed from the displacement detection (step S302) by the displacement detection unit 220 (step S307). If the set time has not elapsed (step S307, NO), the control device 90 repeats the above step S307 after the unit time has elapsed.

On the other hand, when the set time has elapsed (step S307, YES), the control device 90 transmits a preparation command to the transport device 61 (step S308). Upon receiving the preparation command, the transfer device 61 takes out the upper wafer W1 and the lower wafer W2 from the substrate temperature control device 42, and starts moving toward the substrate carry-in / out position shown by the two-dot chain line in FIG. 7.

The substrate temperature control device 42 may not be provided. In that case, when the transfer device 61 receives the preparation command, the upper wafer W1 and the lower wafer W2 are taken out from the position adjusting device 51 and start moving toward the substrate loading / unloading position shown by the two-dot chain line in FIG. 7.

Next, the transfer device 61 completes the movement to the board loading / unloading position (step S309). If the timing of the completion of movement of the transfer device 61 (step S309) is the same as or before the timing of the completion of movement of the lower chuck 231 (step S306), the waiting time becomes zero and the operating rate of the joining device 41 is improved. ..

As described above, the control device 90 transmits a preparation command to the transfer device 61 triggered by the displacement detection (step S302) by the displacement detection unit 220, and starts the transfer device 61 to move toward the substrate loading / unloading position. Compared to the case where the transfer device 61 is started to move toward the substrate loading / unloading position after the movement of the lower chuck 231 is completed (step S306), the waiting time from the completion of the movement of the lower chuck 231 to the start of the loading of the upper wafer W1 and the like. Can be shortened, and the throughput of the substrate processing device 1 can be improved.

The control device 90 arrives at the substrate loading / unloading position at the same time as or before the movement of the lower chuck 231 is completed (step S309), that is, at the same time or before the lower chuck 231 returns to the substrate delivery position. The waiting time from the completion of the movement of the lower chuck 231 to the start of the loading of the upper wafer W1 can be made zero, and the throughput of the substrate processing apparatus 1 can be further improved.

After the set time has elapsed from the displacement detection (step S302) by the displacement detection unit 220, the control device 90 transmits a preparation command to the transfer device 61, and starts the transfer device 61 to move toward the substrate loading / unloading position. By appropriately delaying the transmission of the preparation command, it is possible to shorten the waiting time from the completion of the movement of the transfer device 61 (step S309) to the start of the delivery of the upper wafer W1 and the like. Therefore, the operating rate of the transport device 61 can be improved. Further, the temperature change of the upper wafer W1 and the lower wafer W2 can be suppressed.

If the displacement detection unit 220 is used, the progress of joining of the upper wafer W1 and the lower wafer W2 can be monitored. When the progress of joining cannot be monitored, the waiting time from the start of pushing down the upper wafer W1 by the pushing unit 250 (S201 in FIG. 14) to the release of holding of the peripheral edge of the upper wafer W1 by the upper chuck 230 (S203 in FIG. 14) is waited. , It will be set longer for safety. If the progress of joining is monitored by using the displacement detection unit 220, unnecessary waiting time can be shortened.

Next, with reference to FIG. 16, a third example of the timing at which the preparation command is transmitted to the transport device 61 will be described. Steps S401 to S408 shown in FIG. 16 are carried out under the control of the control device 90.

First, the pushing unit 250 starts pushing down the center of the upper wafer W1 (step S401). Specifically, the push pin 251 of the push portion 250 starts to descend. After that, the control device 90 measures the elapsed time from step S401 with a timer.

Next, the control device 90 checks whether or not the set time has elapsed from step S401 (step S402). If the set time has not elapsed (step S402, NO), the control device 90 repeats the above step S402 after the unit time has elapsed.

On the other hand, when the set time has elapsed (step S402, YES), the joining of the upper wafer W1 and the lower wafer W2 has sufficiently progressed, so that the upper chuck 230 releases the holding of the peripheral edge of the upper wafer W1. (Step S403). As a result, the peripheral edge of the upper wafer W1 falls and abuts on the peripheral edge of the lower wafer W2, the progress of joining is completed, and the polymerized wafer T is obtained.

Next, the moving mechanism 290 starts moving the lower chuck 231 (step S404). The lower chuck 231 starts moving from the joining position to the substrate delivery position. The lower chuck 231 is lowered and subsequently displaced laterally.

Next, the moving mechanism 290 completes the movement of the lower chuck 231 (step S405). The lower chuck 231 stops at the board delivery position. After that, the polymerized wafer T produced by the nth bonding is carried out continuously, and the upper wafer W1 and the lower wafer W2 joined by the n + 1th bonding are continuously carried in. Hereinafter, these series of operations will also be described as carrying in the upper wafer W1 and the like.

The control device 90 gives a preparation command to the transfer device 61 before the movement of the lower chuck 231 is completed in order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S405) to the start of the loading of the upper wafer W1 and the like. Is sent. Hereinafter, the timing of transmitting the preparation command to the transport device 61 will be described.

First, the control device 90 checks whether or not the set time has elapsed from the start of movement of the lower chuck 231 (step S404) (step S406). If the set time has not elapsed (step S406, NO), the control device 90 repeats the above step S406 after the unit time has elapsed.

On the other hand, when the set time has elapsed (step S406, YES), the control device 90 transmits a preparation command to the transport device 61 (step S407). Upon receiving the preparation command, the transfer device 61 takes out the upper wafer W1 and the lower wafer W2 from the substrate temperature control device 42, and starts moving toward the substrate carry-in / out position shown by the two-dot chain line in FIG. 7.

The substrate temperature control device 42 may not be provided. In that case, when the transfer device 61 receives the preparation command, the upper wafer W1 and the lower wafer W2 are taken out from the position adjusting device 51 and start moving toward the substrate loading / unloading position shown by the two-dot chain line in FIG. 7.

Next, the transfer device 61 completes the movement to the board loading / unloading position (step S408). If the timing of the completion of movement of the transfer device 61 (step S408) is the same as or before the timing of the completion of movement of the lower chuck 231 (step S405), the waiting time becomes zero and the operation rate of the joining device 41 is improved. ..

As described above, the control device 90 sends a preparation command to the transfer device 61 triggered by the start of movement of the lower chuck 231 (step S404), and starts the transfer device 61 toward the substrate loading / unloading position. Compared to the case where the transfer device 61 is started to move toward the substrate loading / unloading position after the movement of the lower chuck 231 is completed (step S405), the waiting time from the completion of the movement of the lower chuck 231 to the start of the loading of the upper wafer W1 and the like. Can be shortened, and the throughput of the substrate processing device 1 can be improved.

The control device 90 arrives at the substrate loading / unloading position at the same time as or before the movement of the lower chuck 231 is completed (step S408), that is, at the same time or before the lower chuck 231 returns to the substrate delivery position. The waiting time from the completion of the movement of the lower chuck 231 to the start of the loading of the upper wafer W1 can be made zero, and the throughput of the substrate processing apparatus 1 can be further improved.

After the set time has elapsed from the start of movement of the lower chuck 231 (step S404), the control device 90 transmits a preparation command to the transfer device 61 to start the transfer device 61 toward the substrate loading / unloading position. By appropriately delaying the transmission of the preparation command, it is possible to shorten the waiting time from the completion of the movement of the transfer device 61 (step S408) to the start of the delivery of the upper wafer W1 and the like. Therefore, the operating rate of the transport device 61 can be improved. Further, the temperature change of the upper wafer W1 and the lower wafer W2 can be suppressed.

The control device 90 starts pushing down the upper wafer W1 by the pushing unit 250 (step S201), detects the displacement by the displacement detecting unit 220 (step S302), and starts moving the lower chuck 231 (step S404). A preparation command may be transmitted to the transfer device 61 using at least one as a trigger. The control device may transmit a preparation command to the transfer device 61 by using two or more selected from steps S201, S302 and S404 as a trigger. The number and types of triggers are not particularly limited, but are set in advance and stored in the storage medium 92.

It is preferable that the control device 90 transmits a preparation command to the transfer device 61 at least by using the displacement detection (step S302) by the displacement detection unit 220 as a trigger. The displacement detection unit 220 can monitor the progress of joining between the upper wafer W1 and the lower wafer W2. A preparation command can be transmitted to the transfer device 61 at a timing according to the progress of joining.

If the control device 90 does not detect the displacement by the preset displacement detecting unit 220 within the set time from the start of pushing down the upper wafer W1 by the pushing unit 250 (step S201), it is said that a problem has occurred in the progress of joining. Judge and prohibit the transmission of preparation orders. After that, the control device 90 may notify the user of the board processing device 1 of the alarm.

Further, if the control device 90 does not detect the displacement in both the displacement detecting unit 220 in the direction in which the traveling speed is the fastest and the displacement detecting unit 220 in the direction in which the traveling speed is the slowest, it is determined that a problem has occurred in the progress of the joining. And prohibit the transmission of preparation orders. After that, the control device 90 may notify the user of the board processing device 1 of the alarm.

The control device 90 may restart the transmission of the preparation command when it is confirmed by another sensor or the like that the movement of the transport device 61 is not hindered.

Although the substrate processing apparatus and the embodiment of the substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above-mentioned embodiments and the like. Various changes, modifications, replacements, additions, deletions, and combinations are possible within the scope of the claims. Of course, they also belong to the technical scope of the present disclosure.

1 Substrate processing device 41 Joining device 61 Conveying device 90 Control device 230 Upper chuck (first holding unit)
231 Lower chuck (second holding part)
250 Pushing unit 290 Moving mechanism W1 Upper wafer (first substrate)
W2 lower wafer (second substrate)
T polymerization substrate

The substrate processing device according to one aspect of the present disclosure includes a joining device, a transport device, and a control device. The joining device joins the first substrate and the second substrate to produce a polymerized substrate. The transport device carries in the first substrate and the second substrate to the joining device, and carries out the polymerized substrate. The control device controls the joining device and the transport device. The joining device includes a first holding portion, a second holding portion, and a moving mechanism. The first holding portion holds the first substrate from above. The second holding portion holds the second substrate from below. The moving mechanism moves the relative position between the first holding portion and the second holding portion between the substrate delivery position and the joining position . In the control device, after the transfer device starts moving from the substrate loading / unloading position with respect to the joining device, and the relative position between the first holding portion and the second holding portion returns to the substrate delivery position. At the same time or before returning, the transfer device is brought to the board loading / unloading position .

The control device 90 causes the transfer device 61 to arrive at the board loading / unloading position at the same time as or before the movement of the lower chuck 231 is completed ( step S205), that is, at the same time or before the lower chuck 231 returns to the board delivery position. .. The waiting time from the completion of the movement of the lower chuck 231 to the start of the loading of the upper wafer W1 can be made zero, and the throughput of the substrate processing apparatus 1 can be further improved.

The control device 90 causes the transfer device 61 to arrive at the board loading / unloading position at the same time as or before the movement of the lower chuck 231 is completed (step S306), that is, at the same time or before the lower chuck 231 returns to the board delivery position. .. The waiting time from the completion of the movement of the lower chuck 231 to the start of the loading of the upper wafer W1 can be made zero, and the throughput of the substrate processing apparatus 1 can be further improved.

The control device 90 causes the transfer device 61 to arrive at the board loading / unloading position at the same time or before the movement of the lower chuck 231 is completed ( step S405), that is, at the same time or before the lower chuck 231 returns to the board delivery position. .. The waiting time from the completion of the movement of the lower chuck 231 to the start of the loading of the upper wafer W1 can be made zero, and the throughput of the substrate processing apparatus 1 can be further improved.

Claims (15)

A joining device that joins the first substrate and the second substrate to produce a polymerized substrate,
A transport device for carrying in the first substrate and the second substrate to the joining device, and carrying out the polymerization substrate.
The joining device and the control device for controlling the transfer device are provided.
The joining device has a first holding portion that holds the first substrate from above, a second holding portion that holds the second substrate from below, and a relative position between the first holding portion and the second holding portion. A moving mechanism that moves the Includes a displacement detection unit that detects a downward displacement of the first substrate with respect to the first holding unit at a point away from the center of the first substrate.
The control device at least pushes down the first substrate by the pushing unit, detects the displacement by the displacement detecting unit, and starts moving the relative position from the joining position to the substrate delivery position by the moving mechanism. A substrate processing device that uses one as a trigger to start moving the transfer device toward a substrate loading / unloading position with respect to the joining device. A plurality of the displacement detecting units are provided, and the displacement is detected at a plurality of points having different distances from the center of the first substrate.
The control device claims to determine the progress speed of bonding between the first substrate and the second substrate by the plurality of displacement detecting units, or determine the success or failure of bonding between the first substrate and the second substrate. The substrate processing apparatus according to 1. The progress rate of bonding between the first substrate and the second substrate has anisotropy.
The substrate processing apparatus according to claim 1 or 2, wherein the displacement detection unit is provided in both the direction in which the traveling speed is the fastest and the direction in which the traveling speed is the slowest. Any one of claims 1 to 3, wherein the control device starts moving the transport device toward the board loading / unloading position after a set time has elapsed from the start of pushing down the first substrate by the pushing unit. The substrate processing apparatus described in the section. Any one of claims 1 to 3, wherein the control device starts moving the transport device toward the substrate loading / unloading position after a lapse of a set time from the detection of the displacement by the displacement detecting unit at one or more points. The substrate processing apparatus according to item 1. The control device claims to start moving the transfer device toward the board loading / unloading position after a set time elapses from the start of movement of the relative position from the joining position to the substrate delivery position by the moving mechanism. The substrate processing apparatus according to any one of 1 to 3. The substrate processing apparatus according to any one of claims 1 to 6, wherein the displacement detecting unit measures the distance between the first holding unit and the first substrate. The first holding portion includes a nozzle for sucking or discharging gas.
The substrate processing apparatus according to claim 7, wherein the displacement detecting unit detects the flow rate of gas in the nozzle and measures the distance between the first holding unit and the first substrate. The substrate processing apparatus according to claim 7, wherein the displacement detecting unit measures the distance between the first holding unit and the first substrate by ultrasonic waves, light, or an image. The displacement detection unit is
Whether to receive the reflected light from the first substrate and measure the distance between the first holding portion and the first substrate by the amount of the received light.
The substrate processing apparatus according to claim 7, wherein the distance between the first holding portion and the first substrate is measured by measuring the capacitance between the displacement detecting portion and the first substrate. The substrate processing apparatus according to any one of claims 1 to 6, wherein the displacement detecting unit detects the detachment of the first substrate from the first holding unit. If the displacement detecting unit does not detect the displacement within the set time from the start of pushing down the first substrate by the pushing unit, the control device moves the transport device toward the substrate loading / unloading position. The substrate processing apparatus according to any one of claims 1 to 11, which prohibits transmission of a command. When the control device does not detect the displacement in both the displacement detecting unit in the direction in which the traveling speed is the fastest and the displacement detecting unit in the direction in which the traveling speed is the slowest, the transfer device is carried in and out of the substrate. The substrate processing apparatus according to claim 3, which prohibits the transmission of a command to move toward a position. The control device claims that the transfer device arrives at the substrate loading / unloading position at the same time as or before the relative position of the first holding portion and the second holding portion returns to the substrate delivery position. Item 6. The substrate processing apparatus according to any one of Items 1 to 13. A substrate processing method for joining the first substrate and the second substrate using the substrate processing apparatus according to any one of claims 1 to 14.
To move the relative position between the first holding portion and the second holding portion from the substrate delivery position to the joining position.
The pushing portion pushes down the center of the first substrate to bring it into contact with the second substrate.
The displacement detection unit detects the displacement of the first substrate downward with respect to the first holding portion at a point away from the center of the first substrate.
To move the relative position between the first holding portion and the second holding portion from the joining position to the substrate delivery position.
Triggered by at least one of pushing down the first substrate by the pushing unit, detecting the displacement by the displacement detecting unit, and starting the movement of the relative position from the joining position to the substrate delivery position by the moving mechanism. , The transfer device is started to move toward the board loading / unloading position, and
A substrate processing method.

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