JP2022038231A - Detector - Google Patents

Abstract

To provide a detector capable of appropriately irradiating an area to which an object to be detected is drawn with electromagnetic waves.SOLUTION: According to an embodiment, a detector comprises an installation part, a plurality of magnetic force generating parts, an irradiation part, an adjustment part, a detection part, and a processor. The installation part supports a substrate. The plurality of magnetic force generating parts generate magnetic forces different from each other. The irradiation part irradiates the substrate with electromagnetic waves. The adjustment part adjusts the beam diameter of a beam spot formed on the substrate by the electromagnetic waves. The detection part detects intensity of reflected waves or transmitted waves from the substrate. The processor selects, from the plurality of magnetic force generating parts, a magnetic force generating part to be used to draw an object to be detected which is included in a specified amount of a sample, forces the adjustment part to adjust the beam diameter to a beam diameter corresponding to the selected magnetic force generating part, acquires the intensity of the reflected waves or transmitted waves from the substrate to which the specified amount of the sample by using the detection part, and detects an amount of the sample to be detected which is included in the specified amount of the sample on the basis of the intensity.SELECTED DRAWING: Figure 1

Description

Embodiments of the present invention relate to a detection device.

A detection device for detecting an object to be detected by irradiating a substrate to which an object to be detected with a magnetic material such as magnetic beads is attached with an electromagnetic wave is provided. Some such detection devices use a magnetic force generating portion such as a magnet to attract the object to be detected to a predetermined region of the substrate.

Conventionally, the detection device may not be able to properly irradiate the area where the object to be detected is attracted with electromagnetic waves.

Japanese Unexamined Patent Publication No. 2019-158768

In order to solve the above problems, a detection device capable of appropriately irradiating an area where an object to be detected is attracted with an electromagnetic wave is provided.

According to the embodiment, the installation unit, a plurality of magnetic force generation units, an irradiation unit, an adjustment unit, a detection unit, and a processor are provided. The installation section supports the substrate. The plurality of magnetic force generating parts have different magnetic forces generated from each other. The irradiation unit irradiates the substrate with electromagnetic waves. The adjusting unit adjusts the beam diameter of the beam spot formed on the substrate by the electromagnetic wave. The detection unit detects the intensity of the reflected wave or the transmitted wave from the substrate. The processor selects a magnetic force generating unit used to attract the object to be detected contained in a specified amount of sample from the plurality of magnetic force generating units, and corresponds to the magnetic force generating unit whose beam diameter is selected in the adjusting unit. The intensity of the reflected wave or transmitted wave from the substrate to which the specified amount of sample is attached is acquired by using the detection unit, and the intensity is included in the specified amount of sample based on the intensity. Detects the amount of object to be detected.

FIG. 1 is a diagram showing a configuration example of a detection device according to an embodiment. FIG. 2 is a diagram showing a control system of the detection device according to the embodiment. FIG. 3 is a top view schematically showing a configuration example of the substrate according to the embodiment. FIG. 4 is a cross-sectional view schematically showing a configuration example of the substrate according to the embodiment. FIG. 5 is a diagram showing an operation example of the detection device according to the embodiment. FIG. 6 is a flowchart showing an operation example of the detection device according to the embodiment.

Hereinafter, embodiments will be described with reference to the drawings. It should be noted that each figure is a schematic view for promoting the embodiment and its understanding, and its shape, dimensions, ratio, and the like can be appropriately changed in design.

The detection device according to the embodiment detects an organic substance (object to be detected) such as Escherichia coli contained in the sample. A magnetic material such as magnetic beads is fixed to the object to be detected. The detector attaches the sample to a substrate having a structure with voids. The detection device irradiates the substrate to which the sample is attached with an electromagnetic wave having a predetermined frequency to detect the reflected wave from the substrate. The detection device determines whether or not the object to be detected is present on the substrate based on the intensity of the reflected wave.

FIG. 1 schematically shows a configuration example of the detection device 1. As shown in FIG. 1, the detection device 1 includes an electromagnetic wave generating unit 12, an optical system 13, a beam diameter adjusting unit 14, a stage 16, an optical system 17, an electromagnetic wave receiving unit 18, a pipette 19, a substrate 20, and the like.

The electromagnetic wave generation unit 12 (irradiation unit) irradiates the substrate 20 with an electromagnetic wave (irradiation wave) under the control of the processor 111 to be performed later. The electromagnetic wave generation unit 12 irradiates an electromagnetic wave having a frequency corresponding to the applied voltage. For example, the electromagnetic wave generation unit 12 irradiates an electromagnetic wave having a frequency of about several terahertz. For example, the electromagnetic wave generation unit 12 is composed of a resonance tunnel diode or the like that oscillates at a predetermined frequency by applying a predetermined bias voltage.

The optical system 13 is a lens that focuses the irradiation wave on the substrate 20. For example, the optical system 13 is composed of a plurality of lenses.

The beam diameter adjusting unit 14 (adjusting unit) adjusts the size of the diameter of the irradiation wave applied to the substrate 20. That is, the beam diameter adjusting unit 14 adjusts the diameter (beam diameter) of the region (beam spot) on which the irradiation wave is focused on the substrate 20. The beam diameter adjusting unit 14 adjusts the beam diameter according to the control from the processor 111.

For example, the beam diameter adjusting unit 14 is composed of a lens or the like. Further, the beam diameter adjusting unit 14 may be composed of a diaphragm blade or the like.

The stage 16 (installation portion) is a member that supports the substrate 20. The stage 16 is fixed to a predetermined table.
Further, the stage 16 includes a plurality of magnetic force generation units 10 (first magnetic force generation unit 101, second magnetic force generation unit 102, third magnetic force generation unit 103) and the like.

The first magnetic force generating unit 101, the second magnetic force generating unit 102, and the third magnetic force generating unit 103 are members that generate magnetic force. For example, the first magnetic force generating unit 101, the second magnetic force generating unit 102, and the third magnetic force generating unit 103 are spherical or cylindrical magnets having different sizes from each other. Here, the first magnetic force generating section 101 is the smallest, the second magnetic force generating section 102 is the second smallest, and the third magnetic force generating section 103 is the largest.

The first magnetic force generating unit 101, the second magnetic force generating unit 102, and the third magnetic force generating unit 103 may be made of the same material or may be made of different materials. There may be.

Further, the first magnetic force generating section 101, the second magnetic force generating section 102, and the third magnetic force generating section 103 may be magnets having a conical shape or a conical trapezoidal shape.

Further, the first magnetic force generating section 101, the second magnetic force generating section 102, and the third magnetic force generating section 103 may be made by stacking a plurality of magnets. Further, the first magnetic force generating section 101, the second magnetic force generating section 102, and the third magnetic force generating section 103 may be a combination of a plurality of types of magnets (for example, a neodymium magnet and a ferrite magnet). ..

Further, the first magnetic force generating section 101, the second magnetic force generating section 102, and the third magnetic force generating section 103 may be electromagnets.

The shapes, materials, and structures of the first magnetic force generating unit 101, the second magnetic force generating unit 102, and the third magnetic force generating unit 103 are not limited to a specific configuration.

The stage 16 moves one of the magnetic force generating units 10 to the lower part of the substrate 20 under the control of the processor 111. That is, the stage 16 moves one of the magnetic force generating portions 10 to a position where the magnetic force of the magnetic force generating portion 10 is supplied to the substrate 20.

The stage 16 may move the substrate 20 on the stage 16. That is, the stage 16 may move the substrate 20 to a position where one magnetic force of the magnetic force generating portion 10 is supplied.

The optical system 17 is a lens for focusing the electromagnetic wave (reflected wave) reflected by the substrate 20 on the electromagnetic wave receiving unit 18. For example, the optical system 17 is composed of a plurality of lenses.

The electromagnetic wave receiving unit 18 (detecting unit) detects the intensity of the reflected wave. The electromagnetic wave receiving unit 18 converts the voltage according to the intensity of the reflected wave. For example, the electromagnetic wave receiving unit 18 is composed of a Schottky barrier diode or the like having sensitivity up to the terahertz band by applying a predetermined bias voltage.

The pipette 19 is a member that drops a sample onto the substrate 20. The sample is a liquid containing (possibly) an object to be detected to which magnetic beads are fixed.

The pipette 19 has a suction mechanism for sucking the liquid, a liquid feeding mechanism for discharging the liquid, and a moving mechanism for moving the discharge position of the liquid. The pipette 19 includes a pipette tip. The pipette 19 may include a plurality of pipette tips. For example, the pipette 19 may be provided with a plurality of pipette tips arranged side by side, and may be configured to suck and discharge liquid from each pipette tip.

Further, the pipette tip provided in the pipette 19 is discarded in a tip disposal box or the like after use.

The pipette 19 as a liquid feeding mechanism sucks and discharges liquid from the tip of the pipette tip. The pipette 19 sucks a sample from a container or the like from the tip of the pipette tip under the control of the processor 111. The pipette 19 also discharges the sample onto the substrate 20 under the control of the processor 111.
The pipette 19 as a moving mechanism moves according to the control from the processor 111.

Next, the control system of the detection device 1 will be described.
FIG. 2 is a block diagram showing a control system of the detection device 1. The detection device 1 includes an electromagnetic wave generating unit 12, a beam diameter adjusting unit 14, a stage 16, an electromagnetic wave receiving unit 18, a pipette 19, a processor 111, a memory 112, an address decoder 113, a generating unit driver 114, an A / D converter 115, and a motor driver. It includes 116, an adjustment driver 117, a pump driver 118, a mobile driver 119, an amplifier 120, a stage motor 121, an adjustment motor 122, a pump motor 123, a mobile motor 124, and the like.

The address decoder 113 is connected to the processor 111, the memory 112, the generator driver 114, the A / D converter 115, the motor driver 116, the adjustment driver 117, the pump driver 118, and the mobile driver 119. The A / D converter 115 is connected to the amplifier 120. The amplifier 120 is connected to the electromagnetic wave receiving unit 18. The motor driver 116 is connected to the stage motor 121. The stage motor 121 is connected to the stage 16. The adjustment driver 117 is connected to the adjustment motor 122. The adjustment motor 122 is connected to the beam diameter adjusting unit 14. The pump driver 118 is connected to the pump motor 123. The pump motor 123 is connected to the pipette 19. The mobile driver 119 is connected to the mobile motor 124. The moving motor 124 is connected to the pipette 19.
The electromagnetic wave generating unit 12, the beam diameter adjusting unit 14, the stage 16, the electromagnetic wave receiving unit 18, and the pipette 19 are as described above.

The processor 111 controls the operation of the entire detection device 1. For example, the processor 111 controls the stage 16 to control the position of the magnetic force generating unit 10. Further, the processor 111 causes the electromagnetic wave generation unit 12 to irradiate the electromagnetic wave. Further, the processor 111 detects the object to be detected based on the intensity of the reflected wave detected by the electromagnetic wave receiving unit 18.

For example, the processor 111 is composed of a CPU and the like. Further, the processor 111 may be configured by an ASIC (Application Specific Integrated Circuit) or the like. Further, the processor 111 may be configured by an FPGA (Field Programmable Gate Array) or the like.

The memory 112 stores various data. For example, the memory 112 functions as a ROM, RAM and NVM.
For example, the memory 112 stores a control program, control data, and the like. The control program and control data are preliminarily incorporated according to the specifications of the detection device 1. For example, the control program is a program that supports the functions realized by the detection device 1.

Further, the memory 112 temporarily stores data and the like being processed by the processor 111. Further, the memory 112 may store data necessary for executing the application program, an execution result of the application program, and the like.

The address decoder 113 supplies a control signal from the processor 111 to each unit according to the address bus. For example, the address decoder 113 determines the target to which the control signal is supplied based on the address indicated by the control signal from the processor 111.

The generator driver 114 is an interface for controlling the electromagnetic wave generator 12. For example, the generator driver 114 applies a voltage to the electromagnetic wave generator 12 according to the control from the processor 111. That is, the generator driver 114 converts the control signal into an analog signal and applies it to the electromagnetic wave generator 12.

The amplifier 120 amplifies the voltage from the electromagnetic wave receiving unit 18 at a predetermined magnification. The amplifier 120 outputs the amplified voltage to the A / D converter 115.

The A / D converter 115 generates a sensor signal (digital signal) indicating the voltage output by the amplifier 120. That is, the A / D converter 115 converts the voltage from the amplifier 120 into a digital signal. The A / D converter 115 transmits the sensor signal to the processor 111.

The stage motor 121 is a motor for moving the magnetic force generating unit 10. The stage motor 121 includes a motor for moving the first magnetic force generating section 101, a motor for moving the second magnetic force generating section 102, and a motor for moving the third magnetic force generating section 103. It may be a thing.

The motor driver 116 drives the stage motor 121 according to the control from the processor 111. For example, the motor driver 116 supplies a voltage, a pulse signal, or the like to the stage motor 121.

The adjustment motor 122 is a motor for driving the beam diameter adjusting unit 14. That is, the adjustment motor 122 is a motor for changing the beam diameter. For example, the adjustment motor 122 is a motor for moving the lens or the like of the beam diameter adjusting unit 14.

The adjustment driver 117 drives the adjustment motor 122 according to the control from the processor 111. For example, the adjustment driver 117 supplies a voltage, a pulse signal, or the like to the adjustment motor 122.

The pump motor 123 is a motor for driving the pipette 19 as a liquid feeding mechanism. That is, the pump motor 123 sucks and discharges the sample from the tip of the pipette tip attached to the pipette 19.

The pump driver 118 drives the pump motor 123 according to the control from the processor 111. For example, the pump driver 118 supplies a voltage, pulse signal, or the like to the pump motor 123.

The moving motor 124 is a motor for driving the pipette 19 as a moving mechanism. That is, the moving motor 124 moves the pipette 19.

The mobile driver 119 drives the mobile motor 124 according to the control from the processor 111. For example, the mobile driver 119 supplies a voltage, a pulse signal, or the like to the mobile motor 124.

In addition to the configurations shown in FIGS. 1 and 2, the detection device 1 may further include a configuration as required, or a specific configuration may be excluded from the detection device 1.

Next, the substrate 20 will be described. FIG. 3 is a top view of the substrate 20. FIG. 3 is a cross-sectional view of the substrate 20 cut by F4-F4 of FIG.
As shown in FIGS. 3 and 4, the substrate 20 is composed of a base material 21 and a structure 22 and the like.

The base material 21 is formed, for example, into a rectangle having a predetermined size. It is desirable that the base material 21 is made of a material that does not cause a change with respect to the electromagnetic wave radiated by the electromagnetic wave generating unit 12. That is, it is desirable that the base material 21 is made of a material having transparency in the frequency band of the electromagnetic wave irradiated by the electromagnetic wave generating unit 12. For example, the base material 21 is made of a silicon wafer or the like. Further, the base material 21 may be made of an organic material such as polyethylene.

For example, the thickness of the substrate is in the range of 100 to 800 μm. For example, the thickness of the base material 21 is 525 μm.
The material and outer dimensions of the base material 21 are not limited to a specific configuration.

The structure 22 is formed on a predetermined surface of the base material 21. The structure 22 reflects the electromagnetic wave emitted by the electromagnetic wave generating unit 12. The structure 22 has a frequency characteristic in terms of reflectance. It is desirable that the structure 22 is a conductor having reflectivity in the frequency band of the electromagnetic wave irradiated by the electromagnetic wave generating unit 12.

For example, the structure 22 is formed of a conductor such as gold or aluminum. The structure 22 may be a structure including a plurality of layers. For example, the structure 22 may include a layer such as chromium or titanium as an adhesive layer with the base material 21.
For example, the thickness of the structure 22 is in the range of 0.1 μm to 50 μm. For example, the thickness of the structure 22 is 0.2 μm.

The structure 22 includes a plurality of voids 23 (periodic structures). The structure 22 is periodically provided with voids 23 in the vertical direction and the horizontal direction at predetermined intervals.

The structure 22 forms a complementary split ring resonator by the void 23. The structure 22 forms an LCR (coil, capacitor, resistance) circuit by the void 23. The structure 22 has a resonance characteristic at a predetermined resonance frequency by the LCR circuit.

The void 23 has an annular structure. The void 23 has a structure in which a part of the ring is cut. That is, the void 23 is formed in a C shape. For example, the outer dimension of the void 23 is several tens of μm. The width of the gap 23 (width of the gap) is several μm.

For example, the structure 22 has a peak or minimum reflectance in the terahertz band due to the void 23.
The size, shape, or number of voids 23 included in the structure 22 is not limited to a specific configuration.

Next, the functions realized by the detection device 1 will be described. The following functions are realized by the processor 111 of the detection device 1 executing a program stored in the memory 112 or the like.

First, the processor 111 has a function of adjusting the beam diameter to the beam diameter of the beam spot corresponding to the magnetic force generating unit 10 in the beam diameter adjusting unit 14, and here, the memory 112 has a beam corresponding to each magnetic force generating unit 10. It is assumed that the beam diameter of the spot is stored in advance.
The processor 111 refers to the memory 112 and acquires the beam diameter of the beam spot corresponding to the magnetic force generating unit 10 used for detecting the object to be detected.

FIG. 5 shows an example of a beam spot corresponding to each magnetic force generating portion 10. FIG. 5 shows a first beam spot 201, a second beam spot 202, and a third beam spot 203.

The first beam spot 201 is a beam spot corresponding to the first magnetic force generating unit 101. As shown in FIG. 5, the first magnetic force generating portion 101 forms the first integrated layer 301.

The first integrated layer 301 is composed of an object to be detected attracted by the magnetic force generated by the first magnetic force generating portion 101. That is, the first integrated layer 301 is formed when the sample is dropped on the substrate 20 and dried while the first magnetic force generating portion 101 is in the lower part of the substrate 20. The size of the first integrated layer 301 is determined by the strength or range of the magnetic force generated by the first magnetic force generating portion 101.

The size of the first beam spot 201 corresponds to the size of the first integrated layer 301. Here, the first beam spot 201 includes the first integrated layer 301.

The second beam spot 202 is a beam spot corresponding to the second magnetic force generating unit 102. As shown in FIG. 5, the second magnetic force generating portion 102 forms the second integrated layer 302.

The second integrated layer 302 is composed of an object to be detected attracted by the magnetic force generated by the second magnetic force generating portion 102. That is, the second integrated layer 302 is formed when the sample is dropped on the substrate 20 and dried while the second magnetic force generating portion 102 is in the lower part of the substrate 20. The size of the second integrated layer 302 is determined by the strength or range of the magnetic force generated by the second magnetic force generating portion 102. Here, the second integrated layer 302 is larger than the first integrated layer 301.

The size of the second beam spot 202 corresponds to the size of the second integrated layer 302. Here, the second beam spot 202 includes the second integrated layer 302. Further, the second beam spot 202 is larger than the first beam spot 201.

The third beam spot 203 is a beam spot corresponding to the third magnetic force generating unit 103. As shown in FIG. 5, the third magnetic force generating portion 103 forms the third integrated layer 303.

The third integrated layer 303 is composed of an object to be detected attracted by the magnetic force generated by the third magnetic force generating unit 103. That is, the third integrated layer 303 is formed when the sample is dropped on the substrate 20 and dried while the third magnetic force generating portion 103 is in the lower part of the substrate 20. The size of the third integrated layer 303 is determined by the strength or range of the magnetic force generated by the third magnetic force generating unit 103. Here, the third integrated layer 303 is larger than the second integrated layer 302.

The size of the third beam spot 203 corresponds to the size of the third integrated layer 303. Here, the third beam spot 203 includes the third integrated layer 303. Further, the third beam spot 203 is larger than the second beam spot 202.

When the first magnetic force generating unit 101 is used, the processor 111 acquires the beam diameter of the first beam spot 201. Further, when the second magnetic force generating unit 102 is used, the processor 111 acquires the beam diameter of the second beam spot 202. Further, when the third magnetic force generating unit 103 is used, the processor 111 acquires the beam diameter of the third beam spot 203.

When the beam diameter is acquired, the processor 111 causes the beam diameter adjusting unit 14 to adjust the current beam diameter to the acquired beam diameter. The beam diameter adjusting unit 14 adjusts the lens and the like so that the beam diameter of the beam spot formed by the irradiation wave becomes the acquired beam diameter according to the control from the processor 111.

Further, the processor 111 has a function of selecting the magnetic force generating unit 10 used for detecting the object to be detected.

Here, it is assumed that the pipette 19 holds the sample. Further, it is assumed that the substrate 20 is set on the stage 16.

The processor 111 moves the first magnetic force generating unit 101 to the lower part of the substrate 20 on the stage 16. When the first magnetic force generating unit 101 is moved, the processor 111 causes the beam diameter adjusting unit 14 to adjust the beam diameter to the beam diameter corresponding to the first magnetic force generating unit 101.

When the beam diameter adjusting unit 14 adjusts the beam diameter, the processor 111 moves the pipette 19 to a position (dropping position) where the sample can be dropped onto the substrate 20. When the pipette 19 is moved to the dropping position, the processor 111 drops a sample in the pipette 19 in an amount smaller than a predetermined specified amount (1 / n of the specified amount) on the substrate 20. The processor 111 may drop the sample on the pipette 19 at the position where the first magnetic force generating unit 101 exists.

When the sample is dropped onto the pipette 19, the processor 111 repels the pipette 19. When the pipette 19 is evacuated, the processor 111 dries the sample. For example, the processor 111 dries the sample using a heating mechanism or the like. Processor 111 may also wait for the sample to dry naturally.

Once the sample has dried, the processor 111 detects the amount of object to be detected in the dropped sample.
For example, the processor 111 causes the electromagnetic wave generation unit 12 to irradiate the substrate 20 with an irradiation wave. When the electromagnetic wave generating unit 12 is irradiated with the irradiation wave, the processor 111 acquires the intensity (reflection intensity) of the reflected wave through the electromagnetic wave receiving unit 18.

When the reflection intensity is acquired, the processor 111 detects the amount of the object to be detected based on the reference intensity, the acquired reflection intensity, and the like. The reference intensity is the intensity of the reflected wave from the substrate 20 to which the sample is not attached. The reference strength may be stored in the memory 112 in advance. Further, the reference strength may be measured before dropping the sample onto the substrate 20.

For example, the processor 111 detects the amount of the object to be detected based on the difference between the reference intensity and the acquired reflection intensity. The method by which the processor 111 detects the amount of the object to be detected is not limited to a specific method.

Upon detecting the amount of the object to be detected in the dropped sample, the processor 111 selects one of the magnetic force generating units 10 based on the amount. For example, the processor 111 estimates the total amount of objects to be detected contained in a specified amount of sample from the amount. When the total amount is estimated, the processor 111 selects the magnetic force generating unit 10 that can detect the estimated total amount of the object to be detected with the highest accuracy.

For example, the memory 112 stores in advance the amount of the object to be detected that can be accurately detected by each magnetic force generating unit 10. The processor 111 refers to the memory 112 and selects the magnetic force generating unit 10 corresponding to the estimated total amount.

Further, the processor 111 has a function of detecting the amount of the object to be detected contained in the sample by using the selected magnetic force generating unit 10.

The processor 111 moves the selected magnetic force generating unit 10 to the lower part of the substrate 20 on the stage 16. When the selected magnetic force generating unit 10 is moved, the processor 111 causes the beam diameter adjusting unit 14 to adjust the beam diameter to the beam diameter corresponding to the selected magnetic force generating unit 10.

When the beam diameter adjusting unit 14 adjusts the beam diameter, the processor 111 moves the pipette 19 to the dropping position. When the pipette 19 is moved to the dropping position, the processor 111 drops a specified amount of sample onto the substrate 20. The processor 111 may drop the sample on the pipette 19 at the position where the first magnetic force generating unit 101 exists.

Dropping a specified amount of sample onto the pipette 19 causes processor 111 to dry the sample. For example, the processor 111 dries the sample using a heating mechanism or the like. Processor 111 may also wait for the sample to dry naturally. Further, here, the processor 111 dries the sample in which the pipette 19 may be repelled, and the processor 111 detects the amount of the object to be detected in the dropped sample.
For example, the processor 111 causes the electromagnetic wave generation unit 12 to irradiate the substrate 20 with an irradiation wave. When the electromagnetic wave generating unit 12 is irradiated with the irradiation wave, the processor 111 acquires the reflection intensity through the electromagnetic wave receiving unit 18.

When the reflection intensity is acquired, the processor 111 detects the amount of the object to be detected based on the reference intensity, the acquired reflection intensity, and the like, as described above. The reference intensity may correspond to each beam diameter.

When the amount of the object to be detected is detected, the processor 111 stores information indicating the amount of the object to be detected in the memory 112. Further, the processor 111 may display the amount of the object to be detected on a display unit or the like. Further, the processor 111 may transmit information indicating the amount of the object to be detected to the external device.

Next, an operation example of the detection device 1 will be described.
FIG. 6 is a flowchart for explaining an operation example of the detection device 1.

Here, pipette 19 shall hold the sample. Further, it is assumed that the substrate 20 is set on the stage 16.

First, the processor 111 of the detection device 1 moves the first magnetic force generating unit 101 to the lower part of the substrate 20 on the stage 16 (ACT 11). When the first magnetic force generating unit 101 is moved to the stage 16, the processor 111 causes the beam diameter adjusting unit 14 to adjust the beam diameter to the beam diameter corresponding to the first beam spot 201 (ACT 12).

When the beam diameter adjusting unit 14 adjusts the beam diameter, the processor 111 moves the pipette 19 to the dropping position (ACT 13). When the pipette 19 is moved to the dropping position, the processor 111 drops a sample amount smaller than the specified amount onto the substrate 20 (ACT 14).

When the sample is dropped onto the pipette 19, the processor 111 repels the pipette 19 (ACT 15). When the pipette 19 is evacuated, the processor 111 dries the sample dropped on the substrate 20 (ACT 16).

When the sample is dried, the processor 111 detects the amount of the object to be detected contained in the sample dropped on the substrate 20 (ACT 16). Upon detecting the amount of the object to be detected, the processor 111 selects one of the magnetic force generating units 10 based on the amount of the object to be detected (ACT 18).

When one of the magnetic force generating units 10 is selected, the processor 111 moves the selected magnetic force generating unit 10 to the stage 16 to the lower part of the substrate 20 (ACT 19). When the selected magnetic force generating unit 10 is moved to the stage 16, the processor 111 causes the beam diameter adjusting unit 14 to adjust the beam diameter to the beam diameter corresponding to the selected magnetic force generating unit (ACT 20).

When the beam diameter adjusting unit 14 adjusts the beam diameter, the processor 111 moves the pipette 19 to the dropping position (ACT 21). When the pipette 19 is moved to the dropping position, the processor 111 drops a specified amount of sample onto the substrate 20 by the pipette 19 (ACT 22).

When the sample is dropped on the pipette 19, the processor 111 dries the sample dropped on the substrate 20 (ACT 23).

When the sample is dried, the processor 111 detects the amount of the object to be detected contained in the sample dropped on the substrate 20 (ACT 24). Upon detecting the amount of the object to be detected, the processor 111 stores the amount of the object to be detected in the memory 112 (ACT 25).
When the amount of the object to be detected is stored in the memory 112, the processor 111 ends the operation.

The operator may replace the substrate 20 before the ACT 22.
Further, the detection device 1 may include two or four or more magnetic force generating units 10.

Further, the electromagnetic wave receiving unit 18 may detect the intensity of the transmitted wave from the substrate 20. In this case, the electromagnetic wave receiving unit 18 is installed at a position and orientation opposite to the electromagnetic wave generating unit 12. Further, the processor 111 may move the substrate 20 between the electromagnetic wave generating unit 12 and the electromagnetic wave receiving unit 18 on a stage 16 or the like after the sample dropped on the substrate 20 has dried.

Further, the stage 16 may be moved or rotated according to the control from the processor 111.
Further, the electromagnetic wave generation unit 12 may irradiate an irradiation wave having a plurality of frequencies.
Further, the detection device 1 may include a magnetic force generating unit (electromagnet or the like) capable of changing the generated magnetic force instead of the plurality of magnetic force generating units.

The detection device configured as described above detects the amount of the object to be detected contained in the sample smaller than the specified amount by using the smallest magnetic force generating unit. The detection device selects a magnetic force generating unit according to the detected amount. The detection device detects the amount of the object to be detected contained in the specified amount of the sample by using the selected magnetic force generator. As a result, the detection device can appropriately detect the object to be detected contained in the specified amount of sample.

Further, the detection device adjusts the beam diameter so that the beam spot corresponding to the selected magnetic force generating portion is formed on the substrate. As a result, the detection device can appropriately irradiate the object to be detected attracted by the selected magnetic force generating unit with the irradiation wave. Therefore, the detection device can effectively detect the amount of the object to be detected.

Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and variations thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

1 ... Detection device, 10 ... Magnetic field generator, 12 ... Electromagnetic wave generator, 13 ... Optical system, 14 ... Beam diameter adjustment unit, 16 ... Stage, 17 ... Optical system, 18 ... Electromagnetic wave receiver, 19 ... Pipet, 20 ... Substrate, 21 ... Substrate, 22 ... Structure, 23 ... Void, 101 ... First magnetic force generating section, 102 ... Second magnetic force generating section, 103 ... Third magnetic force generating section, 111 ... Processor, 112 ... Memory , 113 ... address decoder, 114 ... generator driver, 115 ... A / D converter, 116 ... motor driver, 117 ... adjustment driver, 118 ... pump driver, 119 ... mobile driver, 120 ... amplifier, 121 ... stage motor, 122 ... Adjustment motor, 123 ... Pump motor, 124 ... Mobile motor, 201 ... First beam spot, 202 ... Second beam spot, 203 ... Third beam spot, 301 ... First integrated layer, 302 ... Second Integrated layer, 303 ... Third integrated layer.

Claims (5)

The installation part that supports the board and
Multiple magnetic force generators with different magnetic forces generated from each other,
An irradiation unit that irradiates the substrate with electromagnetic waves,
An adjusting unit that adjusts the beam diameter of the beam spot formed on the substrate by the electromagnetic wave, and
A detection unit that detects the intensity of reflected waves or transmitted waves from the substrate, and
From the plurality of magnetic force generating parts, a magnetic force generating part to be used for attracting the object to be detected contained in a specified amount of sample is selected.
The adjusting unit is made to adjust the beam diameter to the beam diameter corresponding to the selected magnetic force generating unit.
The detection unit is used to acquire the intensity of the reflected wave or transmitted wave from the substrate to which the specified amount of sample is attached.
The amount of the object to be detected contained in the specified amount of sample is detected based on the strength.
With the processor
A detector equipped with. The installation portion includes the plurality of magnetic force generating portions.
The processor causes the installation unit to move the selected magnetic force generating unit to the lower part of the substrate.
The detection device according to claim 1. A pipette for dropping the sample is provided.
The processor
Drop a sample in an amount smaller than the specified amount onto the pipette.
The amount of the object to be detected contained in the sample is detected in an amount smaller than the specified amount by using a predetermined magnetic force generating portion.
Based on the detected amount of the object to be detected, the magnetic force generating unit used to attract the object to be detected contained in the specified amount of sample is selected from the plurality of magnetic force generating units.
The detection device according to claim 1 or 2. The predetermined magnetic force generating portion is the smallest magnetic force generating portion among the plurality of magnetic force generating portions.
The detection device according to claim 3. The beam diameter corresponding to the selected magnetic force generating portion is the beam diameter of the beam spot including the object to be detected attracted by the magnetic force of the selected magnetic force generating portion.
The detection device according to any one of claims 1 to 4.

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