JP2022033064A - Film-like adhesive, adhesive sheet, as well as semiconductor device, and its manufacturing method - Google Patents

Abstract

To provide a film-like adhesive agent that can sufficiently suppress inconvenience accompanying a transfer of copper ions in the adhesive agent, and further is excellent in adhesiveness with a substrate and burying property in the substrate.SOLUTION: A film-like adhesive for adhering a semiconductor element to a support member carrying the semiconductor element, contains an epoxy resin having an epoxy equivalent of 140 to 220 g/eq, a phenol resin having a hydroxyl group equivalent of 90 to 130 g/eq, and a thermoplastic resin, in which a content of the thermoplastic resin is 55 to 75 mass% based on a total amount of the film-like adhesive.SELECTED DRAWING: Figure 1

Description

The present invention relates to a film-like adhesive, an adhesive sheet, a semiconductor device, and a method for manufacturing the same.

In recent years, stacked MCPs (Multi Chip Packages) in which semiconductor elements (semiconductor chips) are stacked in multiple stages have become widespread, and are mounted as memory semiconductor packages for mobile phones and portable audio devices. In addition, with the increasing number of functions of mobile phones and the like, the speed, density, and integration of semiconductor packages are being promoted. Along with this, the speed has been increased by using copper as a wiring material for semiconductor chip circuits. Further, from the viewpoint of improving the connection reliability to a complicated mounting board and promoting the exhaust heat from the semiconductor package, a lead frame made of copper or the like is being used.

However, since copper has the property of being easily corroded and the coating material for ensuring the insulation of the circuit surface tends to be simplified from the viewpoint of cost reduction, the semiconductor package has an electrical property. It tends to be difficult to secure. In particular, in a semiconductor package in which semiconductor chips are laminated in multiple stages, copper ions generated by corrosion move inside the adhesive, and there is a tendency for electrical signal loss to occur within the semiconductor chip or between the semiconductor chip / semiconductor chip.

Further, from the viewpoint of high functionality, semiconductor elements are often connected to a complicated mounting substrate, and a lead frame made of copper as a material tends to be preferred in order to improve connection reliability. Even in such a case, the loss of the electric signal due to the copper ions generated from the lead frame may become a problem.

Further, in a semiconductor package using a member made of copper as a material, copper ions are generated from the member, which is likely to cause an electrical defect, and sufficient HAST resistance may not be obtained.

From the viewpoint of preventing loss of electric signals and the like, an adhesive that captures copper ions generated in a semiconductor package is being studied. For example, Patent Document 1 has a thermoplastic resin having an epoxy group and no carboxyl group, and a heterocyclic compound containing a tertiary nitrogen atom as a ring atom, and forms a complex with a cation. Disclosed is an adhesive sheet for manufacturing a semiconductor device having an organic complex-forming compound.

Japanese Unexamined Patent Publication No. 2013-0265666

However, the conventional adhesive is not sufficient in terms of suppressing defects due to the movement of copper ions in the adhesive, and there is still room for improvement.

Therefore, it is a main object of the present invention to provide a film-like adhesive which can sufficiently suppress defects due to the movement of copper ions in the adhesive and has excellent adhesiveness to a substrate and embedding property. And.

One aspect of the present invention is a film-like adhesive for adhering a semiconductor element and a support member on which the semiconductor element is mounted, an epoxy resin having an epoxy equivalent of 140 to 220 g / eq, and a hydroxyl group equivalent of 90 to. Provided is a film-like adhesive containing 130 g / eq of a phenol resin and a thermoplastic resin, wherein the content of the thermoplastic resin is 55 to 75% by mass based on the total amount of the film-like adhesive. ..

When the film-like adhesive contains a specific epoxy resin and a specific phenol resin, the crosslink density of the cured product of the film-like adhesive tends to be high. By increasing the cross-linking density of the cured product of the film-shaped adhesive in this way, the adhesiveness with the substrate can be improved, and further, the mixing of copper ions and the like from the outside can be suppressed, and as a result, the adhesive can be used. It is possible to sufficiently suppress the trouble caused by the movement of the copper ion in the inside. Further, since the film-like adhesive contains a specific content of the thermoplastic resin, the embedding property can be improved even through the thermal history, due to peeling at the adhesive interface and insufficient embedding property of the substrate. It is possible to suppress defects.

The thermoplastic resin may be an acrylic resin. The acrylic resin may be an acrylic resin containing no nitrile group.

The film-like adhesive may further contain an inorganic filler.

The thickness of the film-like adhesive may be 50 μm or less.

In another aspect, the invention provides an adhesive sheet comprising a substrate and the film-like adhesive provided above on one surface of the substrate. The base material may be a dicing tape.

In another aspect, the present invention comprises a semiconductor element, a support member on which the semiconductor element is mounted, and an adhesive member provided between the semiconductor element and the support member and for adhering the semiconductor element and the support member. Provided is a semiconductor device in which the member is a cured product of the above-mentioned film-like adhesive. The support member may include a member made of copper as a material.

In another aspect, the present invention provides a method for manufacturing a semiconductor device, comprising a step of adhering a semiconductor element and a support member using the above-mentioned film-like adhesive.

In another aspect, the present invention is made into a plurality of pieces by a step of attaching the film-like adhesive of the above-mentioned adhesive sheet to the semiconductor wafer and cutting the semiconductor wafer to which the film-like adhesive is attached. Provided is a method for manufacturing a semiconductor device, comprising a step of manufacturing a semiconductor element with a film-like adhesive and a step of adhering the semiconductor element with a film-like adhesive to a support member. The method for manufacturing a semiconductor device may further include a step of heating a semiconductor element with a film-like adhesive bonded to a support member using a reflow furnace.

According to the present invention, there is provided a film-like adhesive which can sufficiently suppress defects due to the movement of copper ions in the adhesive and has excellent adhesiveness to a substrate and embedding property. Further, according to the present invention, an adhesive sheet and a semiconductor device using such a film-like adhesive are provided. Further, according to the present invention, there is provided a method for manufacturing a semiconductor device using a film-like adhesive or an adhesive sheet.

It is a schematic cross-sectional view which shows one Embodiment of a film-like adhesive. It is a schematic cross-sectional view which shows one Embodiment of an adhesive sheet. It is a schematic cross-sectional view which shows the other embodiment of the adhesive sheet. It is a schematic cross-sectional view which shows the other embodiment of the adhesive sheet. It is a schematic cross-sectional view which shows the other embodiment of the adhesive sheet. It is a schematic cross-sectional view which shows one Embodiment of a semiconductor device. It is a schematic cross-sectional view which shows the other embodiment of the semiconductor device.

Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments. In the following embodiments, the components (including steps and the like) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

The same applies to the numerical values and the range thereof in the present specification, and does not limit the present invention. In the present specification, the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively. In the numerical range described stepwise in the present specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. good. Further, in the numerical range described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

As used herein, (meth) acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth) acryloyl group and (meth) acrylic copolymer.

The film-like adhesive according to one embodiment is a film-like adhesive for adhering a semiconductor element and a support member on which the semiconductor element is mounted, and (A) an epoxy resin having an epoxy equivalent of 140 to 220 g / eq. (Hereinafter, it may be referred to as "specific epoxy resin"), (B) a phenol resin having a hydroxyl group equivalent of 90 to 130 g / eq (hereinafter, may be referred to as "specific phenol resin"), and (. C) Contains an epoxy resin. The content of the thermoplastic resin is 55 to 75% by mass based on the total amount of the film-like adhesive.

The film-shaped adhesive can be obtained by molding an adhesive composition containing (A) a specific epoxy resin, (B) a specific phenol resin, and (C) a thermoplastic resin into a film shape. Can be done. The film-like adhesive and the adhesive composition may be in a semi-cured (B stage) state and may be in a completely cured (C stage) state after the curing treatment.

Component (A): Epoxy resin having an epoxy equivalent of 140 to 220 g / eq The component (A) is not particularly limited as long as it has an epoxy equivalent of 140 to 220 g / eq and has an epoxy group in the molecule. Can be used. Examples of such component (A) include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, and bisphenol. F novolak type epoxy resin, stillben type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy Examples thereof include resins, polyfunctional phenols, polycyclic aromatic diglycidyl ether compounds such as anthracene, and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (A) may be a cresol novolac type epoxy resin, a phenol novolac type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin from the viewpoint of film tackiness, flexibility, and the like. good.

The epoxy equivalent of the epoxy resin is 140 to 220 g / eq. The epoxy equivalent of the epoxy resin may be 145 to 215 g / eq or 150 to 210 g / eq. When the epoxy equivalent of the epoxy resin is in such a range, the crosslink density of the cured product of the obtained film-like adhesive tends to be increased when combined with a specific phenol resin.

Component (B): Phenol resin having a hydroxyl group equivalent of 90 to 130 g / eq The component (B) can be a curing agent for an epoxy resin. The component (B) can be used without particular limitation as long as it has a hydroxyl group equivalent of 90 to 130 g / eq and has a phenolic hydroxyl group in the molecule. Examples of such component (B) include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or α-naphthol, β-naphthol, dihydroxynaphthalene and the like. Examples thereof include a novolak-type phenol resin obtained by condensing or co-condensing naphthols and a compound having an aldehyde group such as formaldehyde under an acidic catalyst. These may be used individually by 1 type or in combination of 2 or more type. Among these, the component (B) may be a phenol novolac type phenol resin or a naphthol aralkyl resin.

The hydroxyl group equivalent of the phenol resin is 90 to 130 g / eq. The hydroxyl group equivalent of the phenol resin may be 95 to 125 g / eq or 100 to 120 g / eq. When the hydroxyl equivalent of the phenol resin is 70 g / eq or more, the crosslink density of the cured product of the obtained film-like adhesive tends to be increased when combined with a specific epoxy resin.

The ratio of the epoxy equivalent of the component (A) to the hydroxyl equivalent of the component (B) (the epoxy equivalent of the component (A) / the hydroxyl equivalent of the component (B)) is 0.30 / 0.70 from the viewpoint of curability. ~ 0.70 / 0.30, 0.35 / 0.65 ~ 0.65 / 0.35, 0.40 / 0.60 ~ 0.60 / 0.40, or 0.45 / 0.55 ~ It may be 0.55 / 0.45. When the equivalent amount ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained. When the equivalent equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high, and it is possible to obtain more sufficient fluidity.

The total content of the component (A) and the component (B) may be 5 to 45% by mass, 10 to 40% by mass, or 15 to 30% by mass based on the total amount of the film-like adhesive. When the total content of the component (A) and the component (B) is 5% by mass or more based on the total amount of the film-like adhesive, the elastic modulus tends to be improved by crosslinking. When the total content of the component (A) and the component (B) is 45% by mass or less based on the total amount of the film-like adhesive, the film handleability tends to be maintained.

Component (C): Thermoplastic resin Examples of the component (C) include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin; and modified products thereof. These may be used individually by 1 type or in combination of 2 or more type. The component (C) may be an acrylic resin from the viewpoint of having few ionic impurities, high heat resistance, and ensuring the reliability of the semiconductor element. Here, the acrylic resin means a polymer having a structural unit derived from a (meth) acrylic acid ester. The acrylic resin may contain a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.

The acrylic resin may be an acrylic rubber having a structural unit derived from (meth) acrylic acid ester as a main component. The content of the structural unit derived from the (meth) acrylic acid ester in the acrylic rubber may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more based on the total amount of the structural unit. The acrylic rubber may contain a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.

Acrylic resin can further suppress the movement of copper ions in the adhesive and is more excellent in embedding property. Therefore, acrylic resin containing no nitrile group (that is, a structural unit derived from acrylonitrile) It may be an acrylic resin that does not contain.

In the infrared absorption spectrum of the acrylic resin, when the height of the absorption peak derived from the expansion and contraction vibration of the carbonyl group is _PCO and the height of the peak derived from the expansion and contraction vibration of the nitrile group is _PCN , _PCO and _PCN are assumed. May satisfy the condition of the following formula (1).
P _CN / P _CO <0.070 (1)

Here, the carbonyl group is mainly derived from the (meth) acrylic acid ester which is a constituent unit, and the nitrile group is mainly derived from acrylic nitrile which is a constituent unit. The height of the absorption peak derived from the expansion and contraction vibration of the carbonyl group ( _PCO ) and the height of the peak derived from the expansion and contraction vibration of the nitrile group ( _PCN ) mean those defined in Examples.

A small _PCN / _PCO means that the acrylic resin has a small number of constituent units derived from acrylonitrile. Therefore, an acrylic resin containing no structural unit derived from acrylonitrile can theoretically satisfy the condition of the formula (1).

_PCN / _PCO is less than 0.070, 0.065 or less, 0.060 or less, 0.055 or less, 0.050 or less, 0.040 or less, 0.030 or less, 0.020 or less, or It may be 0.010 or less. When _PCN / PCO is less than _0.070 , it may be possible to sufficiently suppress the movement (permeation) of copper ions in the adhesive. Further, as the value of _PCN / _PCO becomes smaller, the movement (permeation) of copper ions in the adhesive can be more sufficiently suppressed. Further, as the value of _PCN / _PCO decreases, the cohesive force of the acrylic resin decreases, so that the implantability tends to be more excellent.

The glass transition temperature (Tg) of the component (C) may be −50 to 50 ° C. or −30 to 30 ° C. When the Tg of the component (C) is −50 ° C. or higher, it tends to be possible to prevent the adhesive from becoming too flexible. This makes it easier to cut the film-like adhesive during wafer dicing and prevents the occurrence of burrs. When the Tg of the component (C) is 50 ° C. or lower, the decrease in the flexibility of the adhesive tends to be suppressed. This tends to sufficiently facilitate the embedding of voids when the film-like adhesive is attached to the wafer. In addition, it is possible to prevent chipping during dicing due to a decrease in the adhesion of the wafer. Here, the glass transition temperature (Tg) means a value measured using a DSC (heat differential scanning calorimeter) (for example, Thermo Plus 2 manufactured by Rigaku Co., Ltd.).

The weight average molecular weight (Mw) of the component (C) may be 100,000 to 3 million or 200,000 to 2 million. When the Mw of the component (C) is in such a range, the film formability, the strength in the film form, the flexibility, the tackiness and the like can be appropriately controlled, and the reflowability is excellent and the embedding property is improved. can do. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve made of standard polystyrene.

Examples of commercially available products of the component (C) component (acrylic rubber) include SG-P3, SG-80H, and HTR-860P-3CSP (all manufactured by Nagase ChemteX Corporation). Examples of commercially available products of the component (C) (acrylic rubber) containing no structural unit derived from acrylonitrile include KH-CT-865 (manufactured by Hitachi Kasei Co., Ltd.).

The content of the component (C) is 55 to 75% by mass, 57% by mass or more or 60% by mass or more, and 73% by mass or less or 70% by mass or less, based on the total amount of the film-like adhesive. It may be there. When the content of the component (C) is 55% by mass or more based on the total amount of the film-like adhesive, the embedding property after the heat history is added tends to be improved. When the content of the component (C) is 75% by mass or less based on the total amount of the film-like adhesive, sufficient adhesiveness tends to be ensured.

Component (D): Inorganic filler The film-like adhesive may further contain (D) an inorganic filler. Examples of the component (D) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and boron nitride. , Silica and the like. These may be used individually by 1 type or in combination of 2 or more type. These may be surface-treated with a surface treatment agent such as a silane coupling agent. Among these, the component (D) may be silica from the viewpoint of adjusting the melt viscosity. The shape of the component (D) is not particularly limited, but may be spherical.

The average particle size of the component (D) may be 0.01 to 1 μm, 0.01 to 0.08 μm, or 0.03 to 0.06 μm from the viewpoint of fluidity. Here, the average particle size means a value obtained by converting from the BET specific surface area.

The content of the component (D) may be 0.1 to 50% by mass, 0.1 to 30% by mass, or 0.1 to 20% by mass based on the total amount of the film-like adhesive.

The film-like adhesive (adhesive composition) may further contain (E) a coupling agent, (F) a curing accelerator, and the like.

Component (E): Coupling agent The component (E) may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. Be done. These may be used individually by 1 type or in combination of 2 or more type.

Component (F): Curing accelerator The component (F) is not particularly limited, and generally used components can be used. Examples of the component (F) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. These may be used individually by 1 type or in combination of 2 or more type. Among these, from the viewpoint of reactivity, the component (F) may be imidazoles and derivatives thereof.

Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used individually by 1 type or in combination of 2 or more type.

The film-like adhesive (adhesive composition) may further contain other components. Examples of other components include pigments, ion trapping agents, antioxidants and the like.

The content of the component (E), the component (F), and other components may be 0 to 30% by mass based on the total amount of the film-like adhesive.

FIG. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive. The film-like adhesive 1 (adhesive film) shown in FIG. 1 is a film-shaped adhesive composition. The film-like adhesive 1 may be in a semi-cured (B stage) state. Such a film-like adhesive 1 can be formed by applying an adhesive composition to a support film. When using an adhesive composition varnish (adhesive varnish), the component (A) and the component (B), and other components added as necessary are mixed in a solvent, and the mixed solution is mixed or kneaded. The adhesive varnish is prepared, the adhesive varnish is applied to the support film, and the solvent is heated and dried to remove it, whereby the film-like adhesive 1 can be formed.

The support film is not particularly limited as long as it can withstand the above-mentioned heat drying, and for example, polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyethernaphthalate film, polymethylpentene film and the like. May be. The base material 2 may be a multilayer film in which two or more types are combined, or may have a surface treated with a mold release agent such as silicone or silica. The thickness of the support film may be, for example, 60 to 200 μm or 70 to 170 μm.

Mixing or kneading can be performed by using a disperser such as a normal stirrer, a raft machine, a three-roll machine, or a ball mill, and combining these as appropriate.

The solvent used for preparing the adhesive varnish is not limited as long as it can uniformly dissolve, knead or disperse each component, and conventionally known solvents can be used. Examples of such a solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, xylene and the like. The solvent may be methyl ethyl ketone, cyclohexanone or the like in that the drying speed is fast and the price is low.

As a method of applying the adhesive varnish to the base film, a known method can be used, and for example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method and the like can be used. Can be mentioned. The conditions for heating and drying are not particularly limited as long as the solvent used is sufficiently volatilized, but the heating can be performed at 50 to 150 ° C. for 1 to 30 minutes.

The thickness of the film-like adhesive may be 50 μm or less. When the thickness of the film-like adhesive is 50 μm or less, the distance between the semiconductor element and the support member on which the semiconductor element is mounted becomes short, so that defects due to copper ions tend to occur easily. Since the film-shaped adhesive according to the present embodiment can sufficiently suppress the movement (permeation) of copper ions in the adhesive, the thickness thereof can be reduced to 50 μm or less. The thickness of the film-like adhesive 1 may be 40 μm or less, 30 μm or less, 20 μm or less, or 15 μm or less. The lower limit of the thickness of the film-shaped adhesive 1 is not particularly limited, but may be, for example, 1 μm or more.

FIG. 2 is a schematic cross-sectional view showing an embodiment of the adhesive sheet. The adhesive sheet 100 shown in FIG. 2 includes a base material 2 and a film-like adhesive 1 provided on the base material 2. FIG. 3 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. The adhesive sheet 110 shown in FIG. 3 is a cover film provided on a surface opposite to the base material 2, the film-like adhesive 1 provided on the base material 2, and the base material 2 of the film-like adhesive 1. 3 and.

The base material 2 is not particularly limited, but may be a base material film. The base film may be the same as the support film described above.

The cover film 3 is used to prevent damage or contamination of the film-like adhesive, and may be, for example, a polyethylene film, a polypropylene film, a surface release agent-treated film, or the like. The thickness of the cover film 3 may be, for example, 15 to 200 μm or 70 to 170 μm.

The adhesive sheets 100 and 110 can be formed by applying the adhesive composition to the base film in the same manner as in the method for forming the film-like adhesive described above. The method of applying the adhesive composition to the base material 2 may be the same as the method of applying the above-mentioned adhesive composition to the support film.

The adhesive sheet 110 can be obtained by further laminating the cover film 3 on the film-like adhesive 1.

The adhesive sheets 100 and 110 may be formed by using a film-like adhesive prepared in advance. In this case, the adhesive sheet 100 can be formed by laminating under predetermined conditions (for example, at room temperature (20 ° C.) or in a heated state) using a roll laminator, a vacuum laminator, or the like. Since the adhesive sheet 100 can be continuously manufactured and is excellent in efficiency, it may be formed by using a roll laminator in a heated state.

Another embodiment of the adhesive sheet is a dicing-die bonding integrated adhesive sheet in which the base material 2 is a dicing tape. When the dicing / die bonding integrated adhesive sheet is used, the laminating process on the semiconductor wafer is performed once, so that the work efficiency can be improved.

Examples of the dicing tape include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary. The dicing tape may be adhesive. Such a dicing tape may be one in which adhesiveness is imparted to the above-mentioned plastic film, and may be one in which an adhesive layer is provided on one side of the above-mentioned plastic film. The pressure-sensitive adhesive layer may be either a pressure-sensitive type or a radiation-curable type, has sufficient adhesive strength so that the semiconductor element does not scatter during dicing, and does not damage the semiconductor element in the subsequent pickup process of the semiconductor element. As long as it has a low adhesive strength, it is not particularly limited, and conventionally known ones can be used.

The thickness of the dicing tape may be 60 to 150 μm or 70 to 130 μm from the viewpoint of economy and handleability of the film.

Examples of such a dicing / die bonding integrated adhesive sheet include those having the configuration shown in FIG. 4, those having the configuration shown in FIG. 5, and the like. FIG. 4 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. FIG. 5 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. The adhesive sheet 120 shown in FIG. 4 includes a dicing tape 7, an adhesive layer 6, and a film-like adhesive 1 in this order. The adhesive sheet 130 shown in FIG. 5 includes a dicing tape 7 and a film-like adhesive 1 provided on the dicing tape 7.

The adhesive sheet 120 can be obtained, for example, by providing the pressure-sensitive adhesive layer 6 on the dicing tape 7 and further laminating the film-like adhesive 1 on the pressure-sensitive adhesive layer 6. The adhesive sheet 130 can be obtained, for example, by adhering the dicing tape 7 and the film-like adhesive 1.

The film-like adhesive and the adhesive sheet may be used for manufacturing a semiconductor device, and a film-like adhesive and a dicing tape are applied to a semiconductor wafer or a semiconductor element (semiconductor chip) that has already been fragmented from 0 ° C. to 0 ° C. After bonding at 90 ° C., a semiconductor device with a film-like adhesive is obtained by splitting with a rotary blade, a laser or stretching, and then the semiconductor device with the film-like adhesive is used as an organic substrate, a lead frame, or another semiconductor device. It may be used in the manufacture of a semiconductor device including a step of adhering on top.

Examples of the semiconductor wafer include single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide, and the like.

The film-like adhesive and adhesive sheet include semiconductor elements such as ICs and LSIs, lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resin and epoxy resin; and polyimide resins on a base material such as glass non-woven fabric. It can be used as a die bonding adhesive for bonding a plastic such as an epoxy resin impregnated and cured; a support member for mounting a semiconductor such as ceramics such as alumina.

The film-like adhesive and the adhesive sheet are also suitably used as an adhesive for adhering a semiconductor element to a semiconductor element in a Stacked-PKG having a structure in which a plurality of semiconductor elements are stacked. In this case, one of the semiconductor elements becomes a support member on which the semiconductor element is mounted.

The film-like adhesive and the adhesive sheet are, for example, a protective sheet for protecting the back surface of the semiconductor element of the flip-chip type semiconductor device, and for sealing between the surface of the semiconductor element of the flip-chip type semiconductor device and the adherend. It can also be used as a sealing sheet or the like.

A semiconductor device manufactured by using a film-like adhesive will be specifically described with reference to the drawings. In recent years, semiconductor devices having various structures have been proposed, and the use of the film-like adhesive according to the present embodiment is not limited to the semiconductor devices having the structures described below.

FIG. 6 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 200 shown in FIG. 6 is provided between the semiconductor element 9, the support member 10 on which the semiconductor element 9 is mounted, and the semiconductor element 9 and the support member 10, and is an adhesive member that adheres the semiconductor element 9 and the support member 10. (Cured product 1c of film-like adhesive). The connection terminal (not shown) of the semiconductor element 9 is electrically connected to the external connection terminal (not shown) via the wire 11 and is sealed by the sealing material 12.

FIG. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device. In the semiconductor device 210 shown in FIG. 7, the first-stage semiconductor element 9a is adhered to the support member 10 on which the terminal 13 is formed by an adhesive member (cured product 1c of a film-like adhesive), and the first-stage semiconductor element 9a is attached. The second-stage semiconductor element 9b is further adhered to the top by an adhesive member (cured product 1c of a film-like adhesive). The connection terminals (not shown) of the first-stage semiconductor element 9a and the second-stage semiconductor element 9b are electrically connected to the external connection terminal via the wire 11 and sealed by the sealing material 12. As described above, the film-like adhesive according to the present embodiment can be suitably used for a semiconductor device having a structure in which a plurality of semiconductor elements are stacked.

In the semiconductor device (semiconductor package) shown in FIGS. 6 and 7, for example, a film-like adhesive is interposed between the semiconductor element and the support member or between the semiconductor element and the semiconductor element, and these are heat-bonded to both of them. Is then adhered, and if necessary, it is obtained through a wire bonding step, a sealing step with a sealing material, a heating and melting step including reflow with solder, and the like. The heating temperature in the heat crimping step is usually 20 to 250 ° C., the load is usually 0.1 to 200 N, and the heating time is usually 0.1 to 300 seconds.

As a method of interposing a film-like adhesive between a semiconductor element and a support member or between a semiconductor element and a semiconductor element, as described above, after manufacturing a semiconductor element with a film-like adhesive in advance, the support member or the support member or It may be a method of attaching to a semiconductor element.

The support member may include a member made of copper as a material. In the semiconductor device according to the present embodiment, since the semiconductor element and the support member are bonded to each other by the cured product 1c of the film-like adhesive, there is a case where a member made of copper is used as a constituent member of the semiconductor device. However, the influence of copper ions generated from the member can be reduced, and the occurrence of electrical defects caused by copper ions can be sufficiently suppressed.

Here, examples of the member made of copper include a lead frame, wiring, a wire, a heat radiating material, and the like, and even if copper is used for any of the members, the influence of copper ions can be reduced. Is.

Next, an embodiment of a method for manufacturing a semiconductor device when the dicing / die bonding integrated adhesive sheet shown in FIG. 4 is used will be described. The method for manufacturing a semiconductor device using a dicing / die bonding integrated adhesive sheet is not limited to the method for manufacturing a semiconductor device described below.

First, the semiconductor wafer is pressure-bonded to the film-like adhesive 1 in the adhesive sheet 120 (dicing / die-bonding integrated adhesive sheet), and the semiconductor wafer is bonded and held to be fixed (mounting step). This step may be performed while pressing with a pressing means such as a crimping roll.

Next, dicing of the semiconductor wafer is performed. As a result, the semiconductor wafer is cut into a predetermined size to manufacture a plurality of individualized semiconductor elements (semiconductor chips) with a film-like adhesive. Dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method. Further, in this step, for example, a cutting method called full cut in which a dicing tape is cut, a method in which a half cut is made in a semiconductor wafer and the semiconductor wafer is cooled and pulled to be divided, a cutting method using a laser, and the like can be adopted. The dicing apparatus used in this step is not particularly limited, and conventionally known dicing apparatus can be used.

The semiconductor element is picked up in order to peel off the semiconductor element bonded and fixed to the dicing / die bonding integrated adhesive sheet. The pickup method is not particularly limited, and various conventionally known methods can be adopted. For example, a method in which individual semiconductor elements are pushed up from the dicing / die bonding integrated adhesive sheet side by a needle and the pushed up semiconductor elements are picked up by a pickup device and the like can be mentioned.

Here, when the pressure-sensitive adhesive layer is a radiation (for example, ultraviolet ray) curable type, the pickup is performed after irradiating the pressure-sensitive adhesive layer with radiation. As a result, the adhesive force of the adhesive layer against the film-like adhesive is reduced, and the semiconductor element can be easily peeled off. As a result, pickup is possible without damaging the semiconductor element.

Next, the semiconductor element with the film-like adhesive formed by dicing is bonded to the support member for mounting the semiconductor element via the film-like adhesive. Adhesion may be done by crimping. The conditions for the die bond are not particularly limited and can be set as needed. Specifically, for example, it can be performed within the range of a die bond temperature of 80 to 160 ° C., a bonding load of 5 to 15 N, and a bonding time of 1 to 10 seconds.

If necessary, a step of thermosetting the film-like adhesive may be provided. By thermosetting the film-like adhesive that adheres the support member and the semiconductor element by the above-mentioned bonding process, more firmly bonding and fixing becomes possible. When performing thermosetting, pressure may be applied at the same time to cure. The heating temperature in this step can be appropriately changed depending on the constituent components of the film-shaped adhesive. The heating temperature may be, for example, 60 to 200 ° C. The temperature or pressure may be changed step by step.

Next, a wire bonding step is performed in which the tip of the terminal portion (inner lead) of the support member and the electrode pad on the semiconductor element are electrically connected by a bonding wire. As the bonding wire, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature at which wire bonding is performed may be in the range of 80 to 250 ° C or 80 to 220 ° C. The heating time may be several seconds to several minutes. The connection may be performed by a combination of vibration energy by ultrasonic waves and crimping energy by applied pressurization in a state of being heated within the above temperature range.

Next, a sealing step of sealing the semiconductor element with the sealing resin is performed. This step is performed to protect the semiconductor element or the bonding wire mounted on the support member. This step is performed by molding a sealing resin with a mold. The sealing resin may be, for example, an epoxy-based resin. The substrate and the residue are embedded by the heat and pressure at the time of sealing, and it is possible to prevent peeling due to air bubbles at the bonding interface.

Next, in the post-curing step, the insufficiently cured sealing resin is completely cured in the sealing step. Even if the film-like adhesive is not heat-cured in the sealing step, the film-like adhesive can be heat-cured together with the curing of the sealing resin to be bonded and fixed in this step. The heating temperature in this step can be appropriately set depending on the type of the sealing resin, and may be, for example, in the range of 165 to 185 ° C., and the heating time may be about 0.5 to 8 hours.

Next, the semiconductor element with a film-like adhesive bonded to the support member is heated using a reflow furnace. In this step, a resin-sealed semiconductor device may be surface-mounted on the support member. Examples of the surface mount method include reflow soldering in which solder is previously supplied onto a printed wiring board and then heated and melted by warm air or the like to perform soldering. Examples of the heating method include hot air reflow and infrared reflow. Further, the heating method may be one that heats the whole or one that heats a local part. The heating temperature may be, for example, in the range of 240 to 280 ° C.

When the semiconductor elements are laminated in multiple layers, the thermal history of the wire bonding process and the like increases, and the influence on the peeling due to the bubbles existing at the interface between the film-like adhesive and the semiconductor element can be large. However, in the film-like adhesive according to the present embodiment, the cohesive force tends to decrease and the embedding property tends to be improved by using a specific acrylic rubber. Therefore, it is difficult for bubbles to be entrained in the semiconductor device, the bubbles in the sealing step can be easily diffused, and peeling due to the bubbles at the bonding interface can be prevented.

Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited thereto.

[Making a film-like adhesive]
(Examples 1 to 4 and Comparative Examples 1 to 9)
<Preparation of adhesive varnish>
Epoxy resin (A) or (a), phenol resin (B) or (b), and (D) inorganic filler in the product names and composition ratios (unit: mass%) shown in Table 1, Table 2 and Table 3. Cyclohexanone was added to the composition consisting of the above, and the mixture was stirred and mixed. To this, (C) thermoplastic resin shown in Table 1, Table 2 and Table 3 is added and stirred, and further, (E) coupling agent and (F) curing accelerator shown in Table 1, Table 2 and Table 3 are added. In addition, an adhesive varnish was prepared by stirring until each component became uniform. The numerical values of the components (C) and (D) shown in Tables 1, 2 and 3 mean the mass% of the solid content.

(A) Specific epoxy resin (A1) YDCN-700-10 (trade name, manufactured by Nippon Steel & Sumitomo Metal Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 209 g / eq)
(A2) N-770 (trade name, manufactured by Nippon Steel & Sumitomo Metal Corporation, phenol novolac type epoxy resin, epoxy equivalent: 183 to 193 g / eq)
(A3) EXA-830CRP (trade name, manufactured by DIC Corporation, BPF type epoxy resin, epoxy equivalent: 155 to 163 g / eq)

(A) Epoxy resin other than a specific epoxy resin (epoxy resin having an epoxy equivalent outside the range of 140 to 220 g / eq)
(A1) NC-3000 (trade name, manufactured by Nippon Kayaku Co., Ltd., biphenyl aralkyl type epoxy resin, epoxy equivalent: 265 to 285 g / eq)
(A2) NC-2000-L (trade name, manufactured by Nippon Kayaku Co., Ltd., phenyl aralkyl type epoxy resin, epoxy equivalent: 229 to 244 g / eq)

(B) Specific phenol resin (B1) PSM-4326 (trade name, manufactured by Gun Ei Chemical Industry Co., Ltd., phenol novolac resin, hydroxyl group equivalent: 105 g / eq)
(B2) KA-1160 (trade name, manufactured by DIC Corporation, cresol novolak resin, hydroxyl group equivalent: 117 g / eq)

(B) Phenol resin other than a specific phenol resin (phenol resin having a hydroxyl group equivalent outside the range of 90 to 130 g / eq)
(B1) HE-100C-30 (trade name, manufactured by Air Water Inc., phenylaralkyl-type phenol resin, hydroxyl group equivalent: 174 g / eq)
(B2) MEH-7851H (trade name, manufactured by Meiwa Kasei Co., Ltd., biphenyl aralkyl type phenol resin, hydroxyl group equivalent: 216 g / eq)

(C) Thermoplastic resin (C1) SG-P3 solvent modified product (SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, methyl ethyl ketone solution of acrylic rubber) with modified solvent), weight average molecular weight of acrylic rubber: 800,000, Acrylic rubber theory Tg: 12 ° C, _PCN / _PCO = 0.070)
(C2) Acrylic rubber of SG-P3 improved product (SG-P3 (trade name, manufactured by Nagase ChemteX Corporation) excluding acrylonitrile-derived structural units, weight average molecular weight of acrylic rubber: 600,000, Acrylic rubber theory Tg: 12 ° C, P _CN / P _CO = 0.001)
(C3) KH-CT-865 (trade name, manufactured by Hitachi Kasei Co., Ltd., acrylic rubber containing no structural unit derived from acrylonitrile, weight average molecular weight: 480,000, Tg: 7 ° C.)

(Measurement of IR spectrum)
The _PCN / _PCO of (C1) to (C3) was calculated by the following method. First, the transmitted IR spectrum of (C1) to (C3) from which the solvent was removed was measured by the KBr tablet method, and the vertical axis was indicated by the absorbance and the horizontal axis was indicated by the wave number (cm ^-1 ). An FT-IR6300 (manufactured by JASCO Corporation, light source: high-intensity ceramic light source, detector: DLATGS) was used for the measurement of the IR spectrum.

(Height of absorption peak derived from expansion and contraction vibration of carbonyl group _PCO )
The peak with the highest absorbance between the two points 1670 cm ^-1 and 1860 cm ^-1 was taken as the peak point. The straight line between the two points 1670 cm ^-1 and 1860 cm ^-1 is used as the baseline, the point on this baseline that has the same wave number as the peak point is used as the baseline point, and the difference in absorbance between the baseline point and the peak point is taken. The height of the absorption peak ( _PCO ) derived from the expansion and contraction vibration of the carbonyl group was used.

(Peak height _PCN derived from expansion and contraction vibration of nitrile group)
In the same IR spectrum as the one for which _PCO was obtained, the peak having the highest absorbance between the two points of 2270 cm ^-1 and 2220 cm ^-1 was defined as the peak point. The straight line between the two points 2270 cm ^-1 and 2220 cm ^-1 is used as the baseline, the point on this baseline that has the same wave number as the peak point is used as the baseline point, and the difference in absorbance between the baseline point and the peak point is defined as the baseline point. The peak height ( _PCN ) derived from the expansion and contraction vibration of the nitrile group was used.

(D) Inorganic filler (D1) R972 (trade name, manufactured by Nippon Aerosil Co., Ltd., silica, average particle size: 0.016 μm)
(D2) Silica filler dispersion in which the silica filler in YA050C (trade name, manufactured by Admatex Co., Ltd., silica filler dispersion) is surface-treated with a vinylsilane coupling agent and an alkylsilane coupling agent (average particle size 0.050 μm). )
(D3) SC2050-HLG (trade name, manufactured by Admatex Co., Ltd., silica filler dispersion, average particle size 0.50 μm)

(E) Coupling agent (E1) A-189 (trade name, manufactured by Nippon Unicar Co., Ltd., γ-mercaptopropyltrimethoxysilane)
(E2) A-1160 (trade name, manufactured by Nippon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane)

(F) Curing accelerator (F1) 2PZ-CN (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole)

<Making a film-like adhesive>
The prepared adhesive varnish was filtered through a 100 mesh filter and vacuum defoamed. As a base film, a polyethylene terephthalate (PET) film having been subjected to a mold release treatment having a thickness of 38 μm was prepared, and an adhesive varnish after vacuum defoaming was applied onto the PET film. The applied adhesive varnish is heat-dried at 90 ° C. for 5 minutes and then at 130 ° C. for 5 minutes in two steps to obtain the film-like adhesives of Examples 1 to 4 and Comparative Examples 1 to 9 in the B stage state. Obtained. The film-like adhesive was adjusted to have a thickness of 10 μm depending on the amount of the adhesive varnish applied.

[Measurement of copper ion permeation time]
<Preparation of liquid A>
2.0 g of anhydrous copper (II) sulfate was dissolved in 1020 g of distilled water and stirred until the copper sulfate was completely dissolved to prepare an aqueous solution of copper sulfate having a copper ion concentration of 500 mg / kg in terms of Cu element. The obtained copper sulfate aqueous solution was used as solution A.

<Preparation of liquid B>
1.0 g of anhydrous sodium sulfate was dissolved in 1000 g of distilled water, and the mixture was stirred until the sodium sulfate was completely dissolved. Further, 1000 g of N-methyl-2-pyrrolidone (NMP) was added thereto, and the mixture was stirred. Then, it was air-cooled until it reached room temperature to obtain an aqueous sodium sulfate solution. The obtained solution was designated as solution B.

<Measurement of copper ion permeation time>
The film-like adhesives of Examples 1 to 4 and Comparative Examples 1 to 9 in the B stage state were further heated and dried at 170 ° C. for 1 hour, and the film-like adhesives of Examples 1 to 4 and Comparative Examples 1 to 9 in the C stage state were further heated and dried. A film-like adhesive was prepared. The film-like adhesives (thickness: 10 μm) of Examples 1 to 4 and Comparative Examples 1 to 9 in the C stage state were cut out in a circle having a diameter of about 3 cm. Next, two silicon packing sheets having a thickness of 1.5 mm, an outer diameter of about 3 cm, and an inner diameter of 1.8 cm were prepared. The film-like adhesive cut out in a circle was sandwiched between two silicon packing sheets, which was sandwiched between the flanges of two glass cells having a volume of 50 mL and fixed with a rubber band.

Next, 50 g of the liquid A was injected into one glass cell, and then 50 g of the liquid B was injected into the other glass cell. Mars Carbon (manufactured by STAEDTLER Co., Ltd., φ2 mm / 130 mm) was inserted into each cell as a carbon electrode. The anode and the DC power supply (manufactured by A & D Co., Ltd., DC power supply device AD-9723D) were connected with the A liquid side as the anode and the B liquid side as the cathode. Further, the cathode and the DC power supply were connected in series via an ammeter (Digital multimeter PC-720M manufactured by Sanwa Electric Instrument Co., Ltd.). At room temperature, a voltage was applied at an applied voltage of 24.0 V, and measurement of the current value was started after the voltage was applied. The measurement is performed until the current value exceeds 5 μA, the time when the current value reaches 1 μA is defined as the copper ion permeation time, the case where the copper ion permeation time is 200 minutes or more is “A”, and the copper ion permeation time is 140 minutes. If it is less than 200 minutes, it is referred to as "B", if the copper ion permeation time is 80 minutes or more and less than 140 minutes, it is referred to as "C", and if the copper ion permeation time is less than 80 minutes, it is referred to as "D". did. The results are shown in Table 1, Table 2, and Table 3. In this measurement, it can be said that the longer the permeation time, the more the movement (permeation) of copper ions is suppressed.

[Evaluation of embedding property]
<Manufacturing of semiconductor devices>
The implantability was evaluated using the film-like adhesives of Examples 1 to 4 and Comparative Examples 1 to 9. A dicing tape (manufactured by Hitachi Kasei Co., Ltd., thickness 110 μm) was prepared, and the prepared film-like adhesives (thickness 10 μm) of Examples 1 to 4 and Comparative Examples 1 to 9 were attached to the dicing tape and the film-like adhesive. A dicing-die bonding integrated adhesive sheet was produced. A semiconductor wafer having a thickness of 75 μm was laminated on the film-like adhesive side of the dicing-die bonding integrated adhesive sheet at a stage temperature of 70 ° C. to prepare a dicing sample.

The obtained dicing sample was cut using a fully automatic dicing DFD-6361 (manufactured by Disco Corporation). The cutting was performed by a step cutting method using two blades, and dicing blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by DISCO Corporation) were used. The cutting conditions were a blade rotation speed of 4000 rpm, a cutting speed of 50 mm / sec, and a chip size of 7.5 mm × 7.5 mm. For cutting, the first step was cut so that the semiconductor wafer remained about 30 μm, and then the second step was cut so that the dicing tape had a notch of about 20 μm.

Next, the semiconductor chip to be picked up was picked up using the pick-up collet. In the pickup, I pushed it up using one pin in the center. As the pickup conditions, the push-up speed was set to 20 mm / s, and the push-up height was set to 450 μm. In this way, a semiconductor element (semiconductor chip) with a film-like adhesive was obtained.

Next, a semiconductor element (semiconductor chip) with a film-like adhesive was crimped onto a glass epoxy substrate having a dummy circuit using a die bonder BESTEM-D02 (manufactured by Canon Machinery Co., Ltd.). At this time, the position was adjusted so that the semiconductor element was in the center of the dummy circuit. In this way, a semiconductor substrate including a semiconductor element was obtained.

<Evaluation of mold embedding property>
Three semiconductor substrates including the obtained semiconductor elements were prepared as evaluation samples. The evaluation sample was heated in a dryer at 150 ° C. for 1 hour, 2 hours, or 3 hours, respectively, and a heat history was given. After that, the semiconductor substrate provided with the semiconductor element was molded at 175 ° C., 6.9 MPa with a molding device (MSL-06M, manufactured by Apic Yamada Corporation) using a sealing material for molding (CEL-9750ZHF10 manufactured by Hitachi Kasei Co., Ltd.). Resin sealing was performed under the condition of 120 seconds.

The resin-sealed semiconductor device was analyzed by an ultrasonic imaging device (SAT) (HYE-FOCUS, manufactured by Hitachi Construction Machinery Co., Ltd.), and the limit time (0 hours, 1 hour, 2 hours) at which no voids occurred was analyzed. , Or 3 hours) was evaluated as implantability. When the limit time was 3 hours, it was "A", when the limit time was 2 hours, it was "B", when the limit time was 1 hour, it was "C", and the limit time was 0 hours. The case was set to "D". The results are shown in Table 1, Table 2, and Table 3. In this evaluation, it can be said that the longer the limit time during which voids do not occur, the better the implantability because it can be embedded even if a thermal history is given.

[Evaluation of adhesiveness]
<Measurement of die shear strength after curing>
The die shear strength after curing was measured using the semiconductor element (semiconductor chip) with a film-like adhesive. The semiconductor chip was thermocompression bonded onto a solder resist (Taiyo Holdings Co., Ltd., trade name: AUS-308). The crimping conditions were a temperature of 120 ° C., a time of 1 second, and a pressure of 0.1 MPa. Subsequently, the sample obtained by crimping was placed in a dryer and cured at 170 ° C. for 1 hour. By curing the semiconductor chip crimped to the solder resist and pulling it while hooking the semiconductor chip with a universal bond tester (manufactured by Nordson Advance Technology Co., Ltd., product name: Series 4000), the die share after curing of the semiconductor chip and the solder resist The strength was measured. The measurement conditions were a stage temperature of 250 ° C. "A" when the die-share strength after curing is 2.8 MPa or more, "B" when the die-share strength after curing is 2.2 MPa or more and less than 2.8 MPa, and the die-share strength after curing is 1.6 MPa or more 2 The case where it was less than .2 MPa was designated as "C", and the case where the die shear strength after curing was less than 1.6 MPa was designated as "D". The results are shown in Table 1, Table 2, and Table 3.

As shown in Tables 1, 2 and 3, the film-like adhesives of Examples 1 to 4 were evaluated as B or higher in terms of copper ion permeation time, embedding property, and adhesiveness, and were compared. It was superior to the film-like adhesives of Examples 1 to 9.

From the above, it was confirmed that the film-shaped adhesive of the present invention can sufficiently suppress defects due to the movement of copper ions in the adhesive, and is further excellent in adhesiveness to a substrate and embedding property.

1 ... film-like adhesive, 2 ... base material, 3 ... cover film, 6 ... adhesive layer, 7 ... dicing tape, 9,9a, 9b ... semiconductor element, 10 ... support member, 11 ... wire, 12 ... sealing Material, 13 ... Terminal, 100, 110, 120, 130 ... Adhesive sheet, 200, 210 ... Semiconductor device.

Claims (12)

A film-like adhesive for adhering a semiconductor element and a support member on which the semiconductor element is mounted.
Epoxy resin having an epoxy equivalent of 140 to 220 g / eq, and
Phenol resin having a hydroxyl group equivalent of 90 to 130 g / eq, and
Thermoplastic resin and
Contains,
A film-like adhesive having a content of the thermoplastic resin of 55 to 75% by mass based on the total amount of the film-like adhesive. The film-like adhesive according to claim 1, wherein the thermoplastic resin is an acrylic resin. The film-like adhesive according to claim 2, wherein the acrylic resin is an acrylic resin containing no nitrile group. The film-like adhesive according to any one of claims 1 to 3, further containing an inorganic filler. The film-like adhesive according to any one of claims 1 to 4, wherein the film-like adhesive has a thickness of 50 μm or less. With the base material
The film-like adhesive according to any one of claims 1 to 5 provided on one surface of the substrate and the film-like adhesive.
Equipped with an adhesive sheet. The adhesive sheet according to claim 6, wherein the base material is a dicing tape. With semiconductor devices
A support member on which the semiconductor element is mounted and
An adhesive member provided between the semiconductor element and the support member to bond the semiconductor element and the support member, and an adhesive member.
Equipped with
A semiconductor device in which the adhesive member is a cured product of the film-like adhesive according to any one of claims 1 to 5. The semiconductor device according to claim 8, wherein the support member includes a member made of copper as a material. A method for manufacturing a semiconductor device, comprising a step of adhering a semiconductor element and a support member using the film-like adhesive according to any one of claims 1 to 5. The step of attaching the film-like adhesive of the adhesive sheet according to claim 6 or 7 to the semiconductor wafer,
A step of manufacturing a plurality of individualized semiconductor devices with a film-like adhesive by cutting the semiconductor wafer to which the film-like adhesive is attached.
The process of adhering the semiconductor element with a film-like adhesive to the support member,
A method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device according to claim 11, further comprising a step of heating the semiconductor element with a film-like adhesive bonded to the support member by using a reflow furnace.

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