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JP2022079886A - Plasma treatment apparatus - Google Patents

Plasma treatment apparatus Download PDF

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JP2022079886A
JP2022079886A JP2020190745A JP2020190745A JP2022079886A JP 2022079886 A JP2022079886 A JP 2022079886A JP 2020190745 A JP2020190745 A JP 2020190745A JP 2020190745 A JP2020190745 A JP 2020190745A JP 2022079886 A JP2022079886 A JP 2022079886A
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powder
plasma
plasma processing
mixing
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祐介 佐藤
Yusuke Sato
一樹 藤原
Kazuki Fujiwara
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Nippon Pneumatic Manufacturing Co Ltd
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Abstract

To provide a plasma treatment apparatus capable of easily extending contact time of a powder to plasma longer than that of conventional ones.SOLUTION: A plasma treatment apparatus 1 includes: a plasma generation part 2 configured to apply a high-frequency voltage to a supplied gas to generate a plasma; a powder supply part 3 configured to hold a powder of a treatment target and supply the powder to an outside; a plasma treatment part 4 configured to make a plasma gas activated by the plasma supplied from the plasma generation part and the powder supplied from the powder supply part have contact with each other; and a powder separation part 5 configured to separate the powder and a gas composition. Each of the parts 2 to 5 is a separate body and connected to each other interposing a flow channel 8.SELECTED DRAWING: Figure 1

Description

本発明は、粉体に対してプラズマ処理を行うプラズマ処理装置に関するものである。 The present invention relates to a plasma processing apparatus that performs plasma processing on powder.

本願の出願人は、過去に特許文献1に記載の粉体処理装置を提案している。これは、大気圧での粉体の連続投入と取り出しが可能で、プラズマによる処理時間を自由に可変できる、粉体の親水化処理装置及び処理方法の提供を目的としたものである。特許文献1に記載の粉体処理装置は、円筒状基体と、周方向に間欠的に設けられた外側電極及び内側電極と、外側電極を覆う誘電体層と、外側電極と内側電極に高周波電圧を印加する高周波電源と、円筒状基体の内方に輸送ガス及び粉体を流入させる粉体輸送手段と、表面処理された粉体を回収する回収手段とを備えている。 The applicant of the present application has previously proposed the powder processing apparatus described in Patent Document 1. The purpose of this is to provide a powder hydrophilization treatment device and a treatment method capable of continuously charging and taking out powder at atmospheric pressure and freely changing the treatment time by plasma. The powder processing apparatus described in Patent Document 1 has a cylindrical substrate, an outer electrode and an inner electrode intermittently provided in the circumferential direction, a dielectric layer covering the outer electrode, and a high frequency voltage on the outer electrode and the inner electrode. It is provided with a high-frequency power source for applying the above-mentioned material, a powder transport means for inflowing the transport gas and powder into the inside of the cylindrical substrate, and a recovery means for recovering the surface-treated powder.

ここで、特許文献1に記載の粉体処理装置では、プラズマを発生させるための外側電極と内側電極を備えた円筒状の装置に、粉体を流入させて表面処理するものであるから、当該装置内で粉体がプラズマに接触する時間を長くすることがしにくかった。これは、プラズマによって活性化されたガス(以下「プラズマガス」)を用いた処理においても共通する問題である。 Here, in the powder processing apparatus described in Patent Document 1, the powder is flowed into a cylindrical apparatus provided with an outer electrode and an inner electrode for generating plasma to perform surface treatment. It was difficult to lengthen the time that the powder was in contact with the plasma in the device. This is a common problem even in the treatment using a gas activated by plasma (hereinafter referred to as "plasma gas").

特開2017-131803号公報Japanese Unexamined Patent Publication No. 2017-131803

そこで本発明は、粉体がプラズマガスに接触する時間を従来よりも長くすることが容易なプラズマ処理装置を提供することを課題とする。 Therefore, it is an object of the present invention to provide a plasma processing apparatus in which it is easy to extend the contact time of powder with plasma gas longer than before.

本発明は、供給されたガスに高周波電圧をかけることでプラズマを発生させるプラズマ発生部と、処理対象の粉体を保持し、当該粉体を外部に供給する粉体供給部と、前記プラズマ発生部から供給される、プラズマによって活性化されたプラズマガスと前記粉体供給部から供給された粉体を接触させるプラズマ処理部と、粉体とガス成分とを分離する粉体分離部とを備え、前記各部が別体とされていて、流路を介し相互に連結されている、プラズマ処理装置である。 The present invention has a plasma generation unit that generates plasma by applying a high frequency voltage to the supplied gas, a powder supply unit that holds the powder to be processed and supplies the powder to the outside, and the plasma generation unit. It is provided with a plasma processing unit that brings the plasma gas activated by plasma supplied from the unit into contact with the powder supplied from the powder supply unit, and a powder separation unit that separates the powder and the gas component. , Each of the above parts is a separate body, and is a plasma processing apparatus connected to each other via a flow path.

この構成によると、プラズマ処理に関連する各部を別体とすることにより、プラズマガスに粉体を接触させる時間を、処理に必要な時間に設定することが容易である。 According to this configuration, it is easy to set the time for contacting the powder with the plasma gas to the time required for the treatment by separating each part related to the plasma treatment.

また、前記プラズマ処理部は、内部に混合空間を有する混合部を備え、前記混合部において、前記プラズマガスと前記粉体とが周回流を形成するものとできる。 Further, the plasma processing unit includes a mixing unit having a mixing space inside, and the plasma gas and the powder can form a circumferential flow in the mixing unit.

この構成によると、混合部において、プラズマガスと粉体とが周回流を形成することで、周回の度合いに応じてプラズマガスに粉体を接触させる時間を設定できる。 According to this configuration, in the mixing portion, the plasma gas and the powder form an orbital flow, so that the time for contacting the powder with the plasma gas can be set according to the degree of the orbit.

また、前記プラズマ処理部は、前記混合空間に連通して外部に開口するプラズマガス流入部、粉体流入部、粉体・プラズマガス流出部の各々を備え、前記プラズマガス流入部は、前記プラズマ処理部の側方に開口しており、前記粉体流入部は、前記混合部の前記混合空間よりも径方向外方において、前記プラズマ処理部の上方または下方に開口しており、前記粉体・プラズマガス流出部は、前記プラズマ処理部の径方向中央において上方または下方に開口しているものとできる。 Further, the plasma processing unit includes each of a plasma gas inflow unit, a powder inflow unit, and a powder / plasma gas outflow unit that communicate with the mixing space and open to the outside, and the plasma gas inflow unit is the plasma. The powder inflow section is open to the side of the processing section, and the powder inflow section is radially outward from the mixing space of the mixing section, and is open above or below the plasma processing section. -The plasma gas outflow portion may be open upward or downward in the radial center of the plasma processing portion.

この構成によると、プラズマガスと粉体との周回流を形成しやすく、プラズマガスと粉体が流入する部分に対して、流出する部分までの距離を大きく取れるため、プラズマガスに粉体を接触させる時間を長く設定できる。 According to this configuration, it is easy to form a circular flow between the plasma gas and the powder, and a large distance can be taken from the part where the plasma gas and the powder flow in to the part where the powder flows out, so that the powder comes into contact with the plasma gas. You can set a long time to make it.

また、前記混合部の前記混合空間は、横断面が円形の空間とされており、前記プラズマガス流入部は、前記混合空間において前記円形の縁部を規定する前記混合部の内周面の接線方向に沿って延びるものとできる。 Further, the mixing space of the mixing portion has a circular cross section, and the plasma gas inflow portion is a tangent to the inner peripheral surface of the mixing portion that defines the circular edge portion in the mixing space. It can extend along the direction.

この構成によると、プラズマガスを混合空間の縁部の接線方向に流入させられるため、速度低下させずに周回流を形成できる。 According to this configuration, since the plasma gas is allowed to flow in the tangential direction of the edge of the mixing space, it is possible to form a circumferential flow without reducing the speed.

また、前記粉体・プラズマガス流出部は管状とされており、その延長方向の端縁が、前記混合部の底面よりも上方に位置している、または、前記混合部の天面よりも下方に位置しているものとできる。 Further, the powder / plasma gas outflow portion is tubular, and the end edge in the extension direction thereof is located above the bottom surface of the mixing portion or below the top surface of the mixing portion. Can be located in.

この構成によると、周回流中の粉体が混合空間において単純に落下するだけではなく、一度上方に移動し、管状の上端縁を乗り越えることで粉体・プラズマガス流出部からプラズマ処理部の外部に流出する。または、周回流中の粉体が混合空間において単純に上昇するだけではなく、一度下方に移動し、管状の下端縁を乗り越えることで粉体・プラズマガス流出部からプラズマ処理部の外部に流出する。このため、粉体が混合空間で周回流に乗っている時間を長くすることができる。 According to this configuration, the powder in the orbiting flow not only simply falls in the mixing space, but also moves upward once and overcomes the upper end edge of the tubular body to move from the powder / plasma gas outflow part to the outside of the plasma processing part. Leaked into. Alternatively, the powder in the orbiting flow not only simply rises in the mixing space, but also moves downward once and flows out from the powder / plasma gas outflow part to the outside of the plasma processing part by overcoming the lower end edge of the tube. .. Therefore, it is possible to prolong the time that the powder is on the orbiting flow in the mixed space.

また、前記プラズマ発生部が、径方向外方に位置する外部電極と、径方向内方に位置する内部電極とを備え、前記内部電極が、周回しつつ軸方向に延びるコイル状であるものとできる。 Further, the plasma generating portion includes an external electrode located radially outward and an internal electrode located radially inward, and the internal electrode has a coil shape extending in the axial direction while rotating. can.

この構成によると、内部電極をコイル状にしたことで、効率的にプラズマを発生させることができる。 According to this configuration, plasma can be efficiently generated by forming the internal electrode into a coil shape.

本発明では、プラズマガスに粉体を接触させる時間を、処理に必要な時間に設定することを容易にできる。このため、粉体がプラズマガスに接触する時間を従来よりも長くすることが容易である。 In the present invention, it is possible to easily set the time for contacting the powder with the plasma gas to the time required for the treatment. Therefore, it is easy to lengthen the time for the powder to come into contact with the plasma gas longer than before.

本発明の一実施形態に係るプラズマ処理装置の全体構成を概略的に示す図である。It is a figure which shows schematic the whole structure of the plasma processing apparatus which concerns on one Embodiment of this invention. 前記プラズマ処理装置のうちプラズマ発生部の発生部本体を示す径方向断面図である。It is a radial sectional view which shows the generation part main body of the plasma generation part in the said plasma processing apparatus. 前記プラズマ処理装置のうちプラズマ処理部を示す、一部を断面視とした平面図である。FIG. 3 is a plan view showing a part of the plasma processing apparatus showing a plasma processing unit in a cross-sectional view. 前記プラズマ処理部を示し、(a)は、図3のIV-IV矢視の縦断面図であり、(b)は径方向中央での縦断面図である。The plasma processing unit is shown, where FIG. 3A is a vertical cross-sectional view taken along the line IV-IV of FIG. 3, and FIG. 3B is a vertical cross-sectional view at the center in the radial direction.

次に、本発明の一実施形態を取り上げて説明を行う。なお、以下の説明における方向の表現は、各図に示された状態の方向を基準としたものである。 Next, an embodiment of the present invention will be taken up and described. In addition, the expression of the direction in the following description is based on the direction of the state shown in each figure.

本実施形態のプラズマ処理装置1は、図1に示すように構成されていて、例えば粉体に対して親水処理等、特性を付与する、または、本来有していた特性を変更する処理を行うために用いられる。本実施形態のプラズマ処理装置1では、本発明に関連する部分として、プラズマ発生部2、粉体供給部3、プラズマ処理部4、粉体分離部5を備える。また、粉体分離部5の下流側に、集塵装置6とブロア7とを備える。前記各部2~5は別体とされていて、流路8を介し相互に連結されている。本実施形態では、配管により各部2~5が連結されている。連結は、前工程をなす部分と、当該前工程に引き続く後工程をなす部分とでなされている。プラズマ処理に関連する各部2~5を別体とすることにより、プラズマガスに粉体を接触させる時間を、処理に必要な時間に設定することが容易である。また、本実施形態のプラズマ処理装置1は、プラズマ発生部2とプラズマ処理部4とが別体であることから、プラズマ発生時の熱が粉体に影響しにくい。このため、熱により変質しやすい粉体の処理に適している。 The plasma processing apparatus 1 of the present embodiment is configured as shown in FIG. 1, and performs a process of imparting properties such as hydrophilic treatment to powder or changing the originally possessed properties. Used for The plasma processing apparatus 1 of the present embodiment includes a plasma generation unit 2, a powder supply unit 3, a plasma processing unit 4, and a powder separation unit 5 as parts related to the present invention. Further, a dust collector 6 and a blower 7 are provided on the downstream side of the powder separation unit 5. The respective parts 2 to 5 are separate bodies and are connected to each other via the flow path 8. In this embodiment, each part 2 to 5 is connected by a pipe. The connection is made up of a portion forming a pre-process and a portion forming a post-process following the pre-process. By separating each part 2 to 5 related to the plasma treatment, it is easy to set the time for contacting the powder with the plasma gas to the time required for the treatment. Further, in the plasma processing apparatus 1 of the present embodiment, since the plasma generating unit 2 and the plasma processing unit 4 are separate bodies, the heat at the time of plasma generation is unlikely to affect the powder. Therefore, it is suitable for processing powders that are easily deteriorated by heat.

プラズマ発生部2は、発生部本体21、ガス供給部(ガスタンク)22、高電圧電源23から構成されている。ガス供給部22から発生部本体21に供給された原料ガスに、高電圧電源23から供給された交流の高周波電圧をかけることで、発生部本体21においてプラズマを発生させる。 The plasma generation unit 2 is composed of a generation unit main body 21, a gas supply unit (gas tank) 22, and a high voltage power supply 23. Plasma is generated in the generating unit main body 21 by applying an alternating high frequency voltage supplied from the high voltage power supply 23 to the raw material gas supplied from the gas supply unit 22 to the generating unit main body 21.

発生部本体21は、図2に示すように円筒状とされており、軸方向一端側に原料ガスを流入させる入口部211が設けられ、軸方向他端側に、内部で発生したプラズマによって原料ガスが活性化されて発生したプラズマガスを流出させる出口部212が設けられている。原料ガスとしては、例えばアルゴン、ヘリウム等の希ガスを用いることができる。なお、粉体処理の目的に応じて、希ガス以外の他のガスを全面的または付加的に用いることもできる。発生部本体21は、径方向外方に位置する外管213と径方向内方に位置する内管214が同心に配置された二重管構造とされている。外管213と内管214は例えばガラス等の絶縁体から形成されている。原料ガスは、外管213と内管214の間の空間21Sに供給される。つまり、発生部本体21において原料ガスは軸方向に沿って流れる。外管213には湾曲した板状の外部電極215が取り付けられており、内管214には、周回しつつ軸方向に延びるコイル状の内部電極216が取り付けられている。各電極215,216は、銅等の良導体から形成されている。外部電極215と内部電極216の間で放電がなされる。本実施形態では、内部電極216の極性に関し、図2において「+」と表示した側が高電圧電源23に接続された側で、「-」と表示した側がグランド側とされている。放電は、内部電極216から外部電極215に向かってなされる。この放電により、外管213と内管214の間の空間21Sを通る原料ガスのうち一部の分子が電離してプラズマ化する。本実施形態の発生部本体21では、内部電極216をコイル状にしたことで、面状の外部電極215と線状の内部電極216とが径方向に対向することとなるので、対向する両側が面状同士や線状同士である構成に比べて放電を生じさせやすい。よって、効率的にプラズマを発生させることができる。このプラズマにより原料ガスが活性化することで、プラズマ発生部2の発生部本体21でプラズマガスが発生することになる。このプラズマガスは、出口部212から流出し、流路8を介してプラズマ処理部4に送られる。 As shown in FIG. 2, the generating portion main body 21 has a cylindrical shape, an inlet portion 211 for inflowing raw material gas is provided on one end side in the axial direction, and a raw material is provided on the other end side in the axial direction by plasma generated inside. An outlet portion 212 is provided to let out the plasma gas generated by activating the gas. As the raw material gas, for example, a rare gas such as argon or helium can be used. Depending on the purpose of the powder treatment, a gas other than the noble gas may be used entirely or additionally. The generating portion main body 21 has a double pipe structure in which the outer pipe 213 located radially outward and the inner pipe 214 located radially inward are arranged concentrically. The outer tube 213 and the inner tube 214 are formed of an insulator such as glass. The raw material gas is supplied to the space 21S between the outer pipe 213 and the inner pipe 214. That is, the raw material gas flows along the axial direction in the generating unit main body 21. A curved plate-shaped external electrode 215 is attached to the outer tube 213, and a coil-shaped internal electrode 216 extending in the axial direction while rotating is attached to the inner tube 214. Each of the electrodes 215 and 216 is made of a good conductor such as copper. A discharge is made between the external electrode 215 and the internal electrode 216. In the present embodiment, regarding the polarity of the internal electrode 216, the side indicated by "+" in FIG. 2 is the side connected to the high voltage power supply 23, and the side indicated by "-" is the ground side. The electric discharge is performed from the internal electrode 216 toward the external electrode 215. Due to this discharge, some molecules of the raw material gas passing through the space 21S between the outer tube 213 and the inner tube 214 are ionized and turned into plasma. In the generator main body 21 of the present embodiment, since the internal electrode 216 is coiled, the planar external electrode 215 and the linear internal electrode 216 face each other in the radial direction, so that both sides facing each other are opposed to each other. It is more likely to generate an electric discharge than a configuration in which the surfaces are planar or linear. Therefore, plasma can be generated efficiently. When the raw material gas is activated by this plasma, plasma gas is generated in the generation unit main body 21 of the plasma generation unit 2. This plasma gas flows out from the outlet portion 212 and is sent to the plasma processing portion 4 via the flow path 8.

粉体供給部3は、プラズマ処理の処理対象の粉体を保持する容器である粉体保持部31と、粉体保持部31に保持されていた粉体を外部に供給する供給体32から構成されている。粉体は、流路8を介してプラズマ処理部4に送られる。 The powder supply unit 3 includes a powder holding unit 31 which is a container for holding the powder to be processed by plasma treatment, and a feeder 32 which supplies the powder held in the powder holding unit 31 to the outside. Has been done. The powder is sent to the plasma processing unit 4 via the flow path 8.

プラズマ処理部4は、流路8を介してプラズマ発生部2から供給されたプラズマガスに、同じく流路8を介して粉体供給部3から供給された粉体を接触させる部分である。プラズマ処理部4は、内部に混合空間41Sを有する混合部41を備える。混合部41の混合空間41Sは、上下方向に扁平な略円柱状の空間、つまり、横断面が円形の空間とされている。この混合部41において、プラズマガスと粉体とが周回流Fを形成する。周回流Fは、本実施形態では平面視で反時計回りの流れである。このように、混合部41において、プラズマガスと粉体とが周回流Fを形成することで、周回の度合いに応じてプラズマガスに粉体を接触させる時間を設定できる。 The plasma processing unit 4 is a portion in which the plasma gas supplied from the plasma generation unit 2 via the flow path 8 is brought into contact with the powder supplied from the powder supply unit 3 also via the flow path 8. The plasma processing unit 4 includes a mixing unit 41 having a mixing space 41S inside. The mixing space 41S of the mixing portion 41 is a space having a substantially cylindrical shape flat in the vertical direction, that is, a space having a circular cross section. In the mixing portion 41, the plasma gas and the powder form a circumferential flow F. The circumferential flow F is a counterclockwise flow in a plan view in the present embodiment. In this way, in the mixing unit 41, the plasma gas and the powder form an orbital flow F, so that the time for bringing the powder into contact with the plasma gas can be set according to the degree of the orbit.

プラズマ処理部4は、混合空間41Sに連通して外部に開口するプラズマガス流入部42、粉体流入部43、粉体・プラズマガス流出部44の各々を備える。プラズマガス流入部42は、プラズマ処理部4の側方に開口している。本実施形態で開口しているプラズマガス流入部42は、図3での左下と右上に示す2か所が使用されているが、3か所以上であってもよい。ちなみに、本実施形態のプラズマ処理部4では、プラズマガス流入部42を4個所まで増設可能である。開口していない部分には閉鎖プラグ45が取り付けられている。閉鎖プラグ45の、混合空間41Sに面した部分451は、混合部41の内周面411に一致する湾曲面とされており、混合空間41Sに形成される周回流Fに対して衝突しにくい形状となっている。このため、使用しないプラズマガス流入部42のフランジに単に蓋を取り付けることに比べ、使用しないプラズマガス流入部42が周回流Fに悪影響を及ぼしにくい。 The plasma processing unit 4 includes each of a plasma gas inflow unit 42, a powder inflow unit 43, and a powder / plasma gas outflow unit 44 that communicate with the mixing space 41S and open to the outside. The plasma gas inflow section 42 is open to the side of the plasma processing section 4. As the plasma gas inflow portion 42 opened in the present embodiment, two places shown in the lower left and the upper right in FIG. 3 are used, but there may be three or more places. Incidentally, in the plasma processing unit 4 of the present embodiment, the plasma gas inflow unit 42 can be added up to four locations. A closing plug 45 is attached to the portion that is not opened. The portion 451 of the closed plug 45 facing the mixing space 41S has a curved surface corresponding to the inner peripheral surface 411 of the mixing portion 41, and has a shape that does not easily collide with the circumferential flow F formed in the mixing space 41S. It has become. Therefore, the unused plasma gas inflow portion 42 is less likely to adversely affect the circumferential flow F, as compared with simply attaching a lid to the flange of the unused plasma gas inflow portion 42.

プラズマガス流入部42は、径中心線が混合空間41Sにおいて円形の外縁部を規定する混合部41の内周面411の接線方向に沿って延びる。プラズマガスを混合空間41Sの縁部の接線方向に流入させられるため、混合部41の内部構造へのプラズマガス、及び、流入するプラズマガスに乗せられた粉体の衝突が起こりにくく、プラズマガス及び粉体の速度低下を起こさせずに、混合空間41Sに周回流Fを形成できる。プラズマガス流入部42にはノズル部421が取り付けられている。ノズル部421はプラズマガス流入部42の外端部から粉体流入部43に一致する位置まで設けられている。ノズル部421は、内方に向かうにつれ径寸法が絞られて、径方向断面積が縮小している。この形状のノズル部421により、混合空間41Sに勢いよくプラズマガスを流入させられる。 The plasma gas inflow portion 42 extends along the tangential direction of the inner peripheral surface 411 of the mixing portion 41 whose radial center line defines a circular outer edge portion in the mixing space 41S. Since the plasma gas is allowed to flow in the tangential direction of the edge of the mixing space 41S, the plasma gas and the powder placed on the flowing plasma gas are less likely to collide with the internal structure of the mixing portion 41, and the plasma gas and Circular flow F can be formed in the mixing space 41S without causing a decrease in the speed of the powder. A nozzle portion 421 is attached to the plasma gas inflow portion 42. The nozzle portion 421 is provided from the outer end portion of the plasma gas inflow portion 42 to a position corresponding to the powder inflow portion 43. The diameter of the nozzle portion 421 is narrowed toward the inside, and the radial cross-sectional area is reduced. The nozzle portion 421 having this shape allows plasma gas to flow vigorously into the mixing space 41S.

粉体流入部43は、混合部41の混合空間41Sよりも径方向外方において、プラズマ処理部4の上方または下方に開口している。本実施形態では図4に実線で示すように、プラズマ処理部4の上方に粉体流入部43が開口して設けられているが、二点鎖線で示すように下方に開口して設けることもできる。粉体流入部43の径中心線は、プラズマガス流入部42に取り付けられたノズル部421の内端部に一致している。このような位置関係により、ノズル部421により混合空間41Sに勢いよく流入したプラズマガスに対し、流入した粉体を合流させることができるから、プラズマガスに対して粉体を良好に混合させられる。 The powder inflow section 43 opens above or below the plasma processing section 4 in the radial direction outward from the mixing space 41S of the mixing section 41. In the present embodiment, as shown by the solid line in FIG. 4, the powder inflow section 43 is provided with an opening above the plasma processing section 4, but it may also be provided with an opening below as shown by the alternate long and short dash line. can. The diameter center line of the powder inflow portion 43 coincides with the inner end portion of the nozzle portion 421 attached to the plasma gas inflow portion 42. Due to such a positional relationship, the inflowing powder can be merged with the plasma gas vigorously flowing into the mixing space 41S by the nozzle portion 421, so that the powder can be satisfactorily mixed with the plasma gas.

粉体・プラズマガス流出部44は、プラズマ処理部4の径方向中央において下方に開口している。一方、プラズマガス流入部42は、混合空間41Sにおける円形の外縁部に位置している。このため、混合空間41Sでプラズマガスと粉体との周回流Fを形成しやすく、プラズマガスと粉体が流入する部分(プラズマガス流入部42、粉体流入部43)に対して、流出する部分(粉体・プラズマガス流出部44)までの距離を大きく取れるため、プラズマガスに粉体を接触させる時間を長く設定できる。更に、周回流F中の粉体には遠心力が働くため、粉体を、混合空間41Sの径外位置である混合部41の内周面11近くにとどめたままで、混合空間41Sを周回させ続けることができる。このことからも、プラズマガスに粉体を接触させる時間を長く設定できる。また、プラズマガスに粉体を接触させる時間を長くすることが容易なことにより、周回流F中の個々の粉体に対する処理を均一化できることから、処理のばらつきを抑制することもできる。 The powder / plasma gas outflow section 44 opens downward in the radial center of the plasma processing section 4. On the other hand, the plasma gas inflow portion 42 is located at the circular outer edge portion in the mixing space 41S. Therefore, it is easy to form a circumferential flow F between the plasma gas and the powder in the mixing space 41S, and the plasma gas and the powder flow out to the portions (plasma gas inflow portion 42, powder inflow portion 43) into which the plasma gas and the powder flow in. Since the distance to the portion (powder / plasma gas outflow portion 44) can be increased, the time for contacting the powder with the plasma gas can be set long. Further, since centrifugal force acts on the powder in the circumferential flow F, the powder is made to orbit the mixing space 41S while keeping the powder near the inner peripheral surface 11 of the mixing portion 41 which is a position outside the diameter of the mixing space 41S. You can continue. From this as well, the time for contacting the powder with the plasma gas can be set longer. Further, since it is easy to lengthen the time for contacting the powder with the plasma gas, the treatment for each powder in the circumferential flow F can be made uniform, so that the variation in the treatment can be suppressed.

また、粉体・プラズマガス流出部44は管状とされており、図4(a)(b)に示すように、その延長方向の端縁である上端縁441が、混合部41の底面412よりも上方に位置している。つまり、上端縁441は混合部41の内方に位置している。上端縁441の底面412からの突出量は1~10mmで設定されているが、設定する周回流Fの速度に合わせて種々の突出量とすることができる。このように粉体・プラズマガス流出部44が形成されたことで、周回流F中の粉体が混合空間41Sにおいて単純に落下するだけではなく、一度上方に移動し、管状の上端縁441を乗り越えることで粉体・プラズマガス流出部44からプラズマ処理部4の外部に流出する。このため、粉体が混合空間41Sで周回流Fに乗っている時間を長くすることができる。ちなみに、粉体がプラズマガスに接触する時間を長くするという観点では、この粉体・プラズマガス流出部44の上端縁441を混合部41の底面412よりも突出させる構成よりも、前述のプラズマガス流入部42を混合部41の内周面411の接線方向とする構成の方が効果的である。 Further, the powder / plasma gas outflow portion 44 is tubular, and as shown in FIGS. 4 (a) and 4 (b), the upper end edge 441, which is the end edge in the extension direction thereof, is from the bottom surface 412 of the mixing portion 41. Is also located above. That is, the upper end edge 441 is located inside the mixing portion 41. The amount of protrusion of the upper end edge 441 from the bottom surface 412 is set to 1 to 10 mm, but various protrusion amounts can be set according to the speed of the set circumferential flow F. By forming the powder / plasma gas outflow portion 44 in this way, the powder in the circumferential flow F not only simply falls in the mixing space 41S, but also moves upward once to form the tubular upper end edge 441. By overcoming it, it flows out from the powder / plasma gas outflow unit 44 to the outside of the plasma processing unit 4. Therefore, it is possible to prolong the time that the powder is on the circumferential flow F in the mixing space 41S. Incidentally, from the viewpoint of prolonging the time for the powder to come into contact with the plasma gas, the plasma gas described above is more than the configuration in which the upper end edge 441 of the powder / plasma gas outflow portion 44 protrudes from the bottom surface 412 of the mixing portion 41. It is more effective to have the inflow portion 42 in the tangential direction of the inner peripheral surface 411 of the mixing portion 41.

なお、本実施形態の粉体・プラズマガス流出部44は、プラズマ処理部4の径方向中央において下方に開口しているものであったが、これと反対で上方に開口させることもできる。この場合、粉体・プラズマガス流出部44の延長方向の端縁である下端縁が、混合部41の天面よりも下方に位置する。流出方向を下方にするか上方にするかは、前述した、粉体が混合空間41Sで周回流Fに乗っている時間を長くすることができるという観点で、例えば粉体の比重によって選択できる。 The powder / plasma gas outflow section 44 of the present embodiment is opened downward in the radial center of the plasma processing section 4, but on the contrary, it can be opened upward. In this case, the lower end edge, which is the end edge in the extension direction of the powder / plasma gas outflow portion 44, is located below the top surface of the mixing portion 41. Whether the outflow direction is downward or upward can be selected, for example, by the specific gravity of the powder, for example, from the viewpoint that the time during which the powder is on the circumferential flow F in the mixed space 41S can be lengthened.

また、プラズマ処理部4において、プラズマガスと粉体は、処理部に対して連続的に供給される。このため、バッチ処理とは異なりプラズマ処理を効率的に行える。 Further, in the plasma processing unit 4, the plasma gas and the powder are continuously supplied to the processing unit. Therefore, unlike batch processing, plasma processing can be performed efficiently.

粉体分離部5は、プラズマ処理された粉体とプラズマガスに含まれたガス成分とを分離する部分である。粉体分離部5は、例えば内部にサイクロン流を形成することで、粉体とガス成分とを上下に分離する。そして、粉体分離部5から流出したガス成分中に残る粉体を捕集するための集塵装置6が粉体分離部5に接続されている。集塵装置6を出たガス成分はブロア7により装置外に排出される。 The powder separation unit 5 is a portion that separates the plasma-treated powder and the gas component contained in the plasma gas. The powder separation unit 5 separates the powder and the gas component up and down, for example, by forming a cyclone flow inside. Then, a dust collector 6 for collecting the powder remaining in the gas component flowing out from the powder separation unit 5 is connected to the powder separation unit 5. The gas component leaving the dust collector 6 is discharged to the outside of the device by the blower 7.

以上のように構成された本実施形態のプラズマ処理装置1によると、プラズマガスに粉体を接触させる時間を、処理に必要な時間に設定することが容易である。よって、粉体がプラズマガスに接触する時間を従来よりも長くすることが容易である。 According to the plasma processing apparatus 1 of the present embodiment configured as described above, it is easy to set the time for bringing the powder into contact with the plasma gas to the time required for the processing. Therefore, it is easy to lengthen the time for the powder to come into contact with the plasma gas longer than before.

更に、本実施形態のプラズマ処理装置1によると、プラズマ処理に関連する各部を別体とすることにより、次に列挙する効果も奏される。つまり、電極に粉体が付着することにより電気抵抗が大きくなることが原因で、電極が発熱することを防ぐことができる。また、プラズマ処理装置1内部の接粉面を自由な材質(例えはフッ素樹脂、セラミックス)に変更できるため、電極材や接粉面の摩耗によるコンタミネーションを防ぐことができる。また、プラズマガス流量の調整、プラズマ発生部2の形状及びプラズマ処理部4の形状に関し、設計自由度が高い。 Further, according to the plasma processing apparatus 1 of the present embodiment, by separating each part related to the plasma processing, the following effects can be obtained. That is, it is possible to prevent the electrode from generating heat due to the increase in electrical resistance due to the adhesion of powder to the electrode. Further, since the powder contact surface inside the plasma processing device 1 can be changed to a free material (for example, fluororesin or ceramics), contamination due to wear of the electrode material or the powder contact surface can be prevented. Further, the degree of freedom in design is high with respect to the adjustment of the plasma gas flow rate, the shape of the plasma generating unit 2, and the shape of the plasma processing unit 4.

なお、発明者が本実施形態のプラズマ処理装置1と、プラズマ処理部と粉体分離部とが一体とされたタイプのプラズマ処理装置とを比較して、原料ガス(アルゴン)の供給量が同一で、プラズマ発生部にかける電圧を同一にして粉体(アクリル樹脂とカーボンブラックの2種)の処理を試したところ、いずれの粉体についても、処理後の粉体の水接触角が小さくなっていたことから、粉体の親水性を比較対象のプラズマ処理装置よりも向上できたことを確認できた。 In addition, the inventor compares the plasma processing apparatus 1 of the present embodiment with the plasma processing apparatus of the type in which the plasma processing unit and the powder separation unit are integrated, and the supply amount of the raw material gas (argon) is the same. Then, when the treatment of powders (two types of acrylic resin and carbon black) was tried with the same voltage applied to the plasma generating part, the water contact angle of the treated powders became smaller for both powders. Therefore, it was confirmed that the hydrophilicity of the powder could be improved as compared with the plasma processing device to be compared.

以上、本発明の一実施形態を示して説明してきたが、本発明は前記各実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内において種々の変更を加えることができる。 Although the present invention has been described above with reference to one embodiment of the present invention, the present invention is not limited to each of the above-described embodiments, and various modifications can be made without departing from the gist of the present invention.

1 プラズマ処理装置
2 プラズマ発生部
21 発生部本体
21S 発生部本体の空間
211 入口部
212 出口部
213 外管
214 内管
215 外部電極
216 内部電極
22 ガス供給部
23 高電圧電源
3 粉体供給部
31 粉体保持部
32 供給体
4 プラズマ処理部
41 混合部
411 混合部の内周面
412 混合部の底面
41S 混合空間
42 プラズマガス流入部
421 ノズル部
441 上端縁
43 粉体流入部
44 粉体・プラズマガス流出部
5 粉体分離部
6 集塵装置
7 ブロア
8 流路
F 周回流
1 Plasma processing device 2 Plasma generating part 21 Generating part main body 21S Generating part Main body space 211 Inlet part 212 Outlet part 213 Outer pipe 214 Inner pipe 215 External electrode 216 Internal electrode 22 Gas supply part 23 High voltage power supply 3 Powder supply part 31 Powder holding part 32 Feeder 4 Plasma processing part 41 Mixing part 411 Inner peripheral surface of mixing part 412 Bottom surface of mixing part 41S Mixing space 42 Plasma gas inflow part 421 Nozzle part 441 Top edge 43 Powder inflow part 44 Powder plasma Gas outflow part 5 Powder separation part 6 Dust collector 7 Blower 8 Flow path F Circular flow

Claims (6)

供給されたガスに高周波電圧をかけることでプラズマを発生させるプラズマ発生部と、
処理対象の粉体を保持し、当該粉体を外部に供給する粉体供給部と、
前記プラズマ発生部から供給される、プラズマによって活性化されたプラズマガスと前記粉体供給部から供給された粉体を接触させるプラズマ処理部と、
粉体とガス成分とを分離する粉体分離部とを備え、
前記各部が別体とされていて、流路を介し相互に連結されている、プラズマ処理装置。
A plasma generator that generates plasma by applying a high frequency voltage to the supplied gas,
A powder supply unit that holds the powder to be processed and supplies the powder to the outside,
A plasma processing unit that brings the plasma gas activated by the plasma supplied from the plasma generation unit into contact with the powder supplied from the powder supply unit.
Equipped with a powder separation unit that separates powder and gas components,
A plasma processing device in which each of the above parts is separated and connected to each other via a flow path.
前記プラズマ処理部は、内部に混合空間を有する混合部を備え、
前記混合部において、前記プラズマガスと前記粉体とが周回流を形成する、請求項1に記載のプラズマ処理装置。
The plasma processing unit includes a mixing unit having a mixing space inside.
The plasma processing apparatus according to claim 1, wherein in the mixing section, the plasma gas and the powder form a circumferential flow.
前記プラズマ処理部は、前記混合空間に連通して外部に開口するプラズマガス流入部、粉体流入部、粉体・プラズマガス流出部の各々を備え、
前記プラズマガス流入部は、前記プラズマ処理部の側方に開口しており、
前記粉体流入部は、前記混合部の前記混合空間よりも径方向外方において、前記プラズマ処理部の上方または下方に開口しており、
前記粉体・プラズマガス流出部は、前記プラズマ処理部の径方向中央において上方または下方に開口している、請求項2に記載のプラズマ処理装置。
The plasma processing unit includes each of a plasma gas inflow unit, a powder inflow unit, and a powder / plasma gas outflow unit that communicate with the mixing space and open to the outside.
The plasma gas inflow portion is open to the side of the plasma processing portion.
The powder inflow portion is open above or below the plasma processing portion in the radial direction outward from the mixing space of the mixing portion.
The plasma processing apparatus according to claim 2, wherein the powder / plasma gas outflow portion opens upward or downward in the radial center of the plasma processing portion.
前記混合部の前記混合空間は、横断面が円形の空間とされており、
前記プラズマガス流入部は、前記混合空間において前記円形の縁部を規定する前記混合部の内周面の接線方向に沿って延びる、請求項3に記載のプラズマ処理装置。
The mixed space of the mixing portion is a space having a circular cross section.
The plasma processing apparatus according to claim 3, wherein the plasma gas inflow portion extends along the tangential direction of the inner peripheral surface of the mixing portion that defines the circular edge portion in the mixing space.
前記粉体・プラズマガス流出部は管状とされており、その延長方向の端縁が、前記混合部の底面よりも上方に位置している、または、前記混合部の天面よりも下方に位置している、請求項3または4に記載のプラズマ処理装置。 The powder / plasma gas outflow portion is tubular, and the end edge in the extension direction thereof is located above the bottom surface of the mixing portion or below the top surface of the mixing portion. The plasma processing apparatus according to claim 3 or 4. 前記プラズマ発生部が、径方向外方に位置する外部電極と、径方向内方に位置する内部電極とを備え、
前記内部電極が、周回しつつ軸方向に延びるコイル状である、請求項1~5のいずれかに記載のプラズマ処理装置。
The plasma generating portion includes an external electrode located radially outward and an internal electrode located radially inward.
The plasma processing apparatus according to any one of claims 1 to 5, wherein the internal electrode has a coil shape extending in the axial direction while rotating.
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