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JP2021157000A - Exposure apparatus and exposure method - Google Patents

Exposure apparatus and exposure method Download PDF

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JP2021157000A
JP2021157000A JP2020055610A JP2020055610A JP2021157000A JP 2021157000 A JP2021157000 A JP 2021157000A JP 2020055610 A JP2020055610 A JP 2020055610A JP 2020055610 A JP2020055610 A JP 2020055610A JP 2021157000 A JP2021157000 A JP 2021157000A
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vector data
contour line
exposure
data
correction
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JP7432418B2 (en
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隆志 奥山
Takashi Okuyama
隆志 奥山
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Orc Manufacturing Co Ltd
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Orc Manufacturing Co Ltd
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Priority to KR1020200105408A priority patent/KR102775050B1/en
Priority to CN202011470253.7A priority patent/CN113448176B/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2057Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • G03F7/70291Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

To provide a method of smoothly forming a pattern gradient line in an exposure apparatus.SOLUTION: In an exposure apparatus, a vector data processing circuit converts the vector data of contour BD0 into contour corrected vector data BD + shifted to ± X direction (outside the contour line and/or the inner side of the contour), and the multi exposure operation is performed using the original contour vector data BD0 and the contour correcting vector data BD + alternately.SELECTED DRAWING: Figure 2

Description

本発明は、光変調素子アレイを用いてパターンを形成する露光装置に関し、特に、ベクタデータ(ベクトルデータともいう)からラスタデータへのデータ変換処理に関する。 The present invention relates to an exposure apparatus that forms a pattern using an light modulation element array, and more particularly to a data conversion process from vector data (also referred to as vector data) to raster data.

マスクレス露光装置では、基板が搭載されるステージを走査方向に沿って移動させながら、DMD(Digital Micro-mirror Device)などの光変調素子アレイによってパターン光を基板に投影する。そこでは、ステージに搭載され、フォトレジスト層を形成した基板上での投影エリア(露光エリア)の位置に応じてパターン光を投影するように、2次元状に配列された光変調素子(マイクロミラーなど)を制御する。 In a maskless exposure apparatus, pattern light is projected onto a substrate by an optical modulation element array such as a DMD (Digital Micro-mirror Device) while moving a stage on which the substrate is mounted along a scanning direction. There, light modulation elements (micromirrors) mounted in a two-dimensional manner so as to project pattern light according to the position of the projection area (exposure area) on the substrate on which the photoresist layer is formed. Etc.) to control.

露光装置では、CAD/CAMデータなどのベクタデータ(設計データ)が入力されると、光変調素子アレイに適用可能なラスタデータに変換する。ラスタデータは、各マイクロミラーの露光データを表すビットマップデータであり、マイクロミラーの投影像は矩形状になる。そのため、パターンに傾斜ラインが含まれる場合、段差のある階段状パターンが形成される。 When vector data (design data) such as CAD / CAM data is input in the exposure apparatus, it is converted into raster data applicable to the light modulation element array. The raster data is bitmap data representing the exposure data of each micromirror, and the projected image of the micromirror has a rectangular shape. Therefore, when the pattern includes an inclined line, a stepped pattern with a step is formed.

これを低減するため、傾斜ラインを表す露光データに対し、露光領域ごとに多段階の濃度を付与し、傾斜ラインを滑らかにする方法が提案されている(特許文献1参照)。そこでは、パターン中心付近の露光領域に対して最大濃度を付与し、パターン境界線となる傾斜ラインなどを含む段差部分の露光領域に対して中間濃度を付与する。そして、中間濃度の露光領域に対する光強度を、最大濃度の露光領域に対する光強度の半分にすることによって、より多段階の傾斜ラインを形成して分解能を向上させている。 In order to reduce this, a method has been proposed in which the exposure data representing the inclined line is given a multi-step density for each exposure region to smooth the inclined line (see Patent Document 1). There, the maximum density is given to the exposed area near the center of the pattern, and the intermediate density is given to the exposed area of the stepped portion including the inclined line which is the pattern boundary line. Then, by reducing the light intensity for the exposure region of the intermediate density to half the light intensity for the exposure region of the maximum density, a more multi-step inclined line is formed to improve the resolution.

特開2011−65223号公報Japanese Unexamined Patent Publication No. 2011-65223

露光データに対して露光領域ごとに多段階の濃度を付与する処理は、従来と比べてデータ量を増加させ、データ処理回路の大規模化が必要となる。また、ラスタデータの変換処理(補正処理)を別途伴うため、処理時間の増大、スループットの低下を招く。 The process of imparting multi-step densities to the exposure data for each exposure region increases the amount of data as compared with the conventional case, and requires a large-scale data processing circuit. In addition, since raster data conversion processing (correction processing) is separately involved, the processing time increases and the throughput decreases.

したがって、露光装置において、データ処理を煩雑化せずにパターン傾斜線を滑らかに形成することが求められる。 Therefore, in the exposure apparatus, it is required to smoothly form the pattern slope line without complicating the data processing.

本発明の露光装置は、複数の光変調素子を2次元配列させた光変調素子アレイと、パターンデータであるベクタデータを、ラスタデータに変換するラスタデータ変換処理部と、パターン輪郭線を表すベクタデータを、パターン輪郭線を一方向に沿ってシフトさせた補正ベクタデータ(以下、輪郭線補正ベクタデータという)に変換するベクタデータ補正処理部とを備える。 The exposure apparatus of the present invention includes an optical modulation element array in which a plurality of light modulation elements are arranged in two dimensions, a raster data conversion processing unit that converts vector data that is pattern data into raster data, and a vector that represents a pattern contour line. It is provided with a vector data correction processing unit that converts the data into correction vector data (hereinafter referred to as contour line correction vector data) in which the pattern contour line is shifted along one direction.

パターン輪郭線をシフトさせる方向は様々に設定可能であり、ラスタデータ変換処理部は、パターン輪郭線の輪郭サイズ、パターンサイズなどが拡大する方向(外側)、あるいはその逆方向(内側方向)へシフトさせることが可能である。基板上において主走査方向、副走査方向が規定されている場合、ラスタデータ変換処理部は、パターン輪郭線を2次元座標系の一方向へシフトさせることが可能である。ここで、「一方向に沿ってシフトさせる」とは、例えば、副走査方向にシフトさせる場合、正負の方両方向を含む。 The direction in which the pattern contour line is shifted can be set in various ways, and the raster data conversion processing unit shifts the pattern contour line contour size, pattern size, etc. in the direction of expansion (outside) or vice versa (inside direction). It is possible to make it. When the main scanning direction and the sub-scanning direction are defined on the substrate, the raster data conversion processing unit can shift the pattern contour line in one direction of the two-dimensional coordinate system. Here, "shifting along one direction" includes, for example, both positive and negative directions when shifting in the sub-scanning direction.

本発明の露光装置では、シフト補正されていないパターン輪郭線のデータ(以下、輪郭線ベクタデータという)と、シフト補正された輪郭線補正ベクタデータとに基づいて、多重露光を行う。例えば露光装置は、所定のピッチで多重露光動作を実行する露光制御部を備えることが可能である。多重露光後の積算露光量に基づく基板の感光材閾値に応じたエッジ部分は、データシフト量に従うため、分解能を高めることが可能となる。 In the exposure apparatus of the present invention, multiple exposure is performed based on the pattern contour line data that has not been shift-corrected (hereinafter referred to as contour line vector data) and the shift-corrected contour line correction vector data. For example, the exposure apparatus can include an exposure control unit that executes a multiple exposure operation at a predetermined pitch. Since the edge portion corresponding to the photosensitive material threshold value of the substrate based on the integrated exposure amount after the multiple exposure follows the data shift amount, the resolution can be improved.

ベクタデータ補正処理部は、光変調素子の投影エリアサイズ以下のシフト量で、輪郭線ベクタデータを、複数の輪郭線補正ベクタデータに順次変換することが可能である。例えば、シフト量を、主走査方向の分解能(見かけ上の分解能も含む)に応じたシフト量に定めることによって、副走査方向の分解能をベクタデータのシフト補正によって、副走査方向の分解能を主走査方向と同等の分解能に高めることが可能である。 The vector data correction processing unit can sequentially convert the contour line vector data into a plurality of contour line correction vector data with a shift amount equal to or less than the projection area size of the light modulation element. For example, by setting the shift amount to the shift amount according to the resolution in the main scanning direction (including the apparent resolution), the resolution in the sub-scanning direction is corrected by shifting the vector data, and the resolution in the sub-scanning direction is the main scanning. It is possible to increase the resolution to the same level as the direction.

ベクタデータ補正処理部は、異なるシフト量で、輪郭線ベクタデータを輪郭線補正ベクタデータに順次変換することが可能である。例えばベクタデータ補正処理部は、シフト量を周期的に変えながら、輪郭線ベクタデータを輪郭線補正ベクタデータに順次変換することができる。 The vector data correction processing unit can sequentially convert the contour line vector data into the contour line correction vector data with different shift amounts. For example, the vector data correction processing unit can sequentially convert the contour line vector data into the contour line correction vector data while periodically changing the shift amount.

ベクタデータ補正処理部は、輪郭線ベクタデータを、一方向(ここでは、正側という)へシフトした正側補正ベクタデータ、あるいは一方向の逆(ここでは、負側という)へシフトした負側補正ベクタデータに変換することが可能であり、また、正側、負側へ順にシフトさせながら輪郭線ベクタデータを変換することが可能である。露光装置は、輪郭線ベクタデータと、正側補正ベクタデータと、負側補正ベクタデータとに基づいて、多重露光を行う。 The vector data correction processing unit shifts the contour line vector data to the positive side correction vector data shifted in one direction (here, referred to as the positive side) or the negative side shifted to the opposite direction (here referred to as the negative side). It is possible to convert to correction vector data, and it is also possible to convert contour line vector data while shifting in order from the positive side to the negative side. The exposure apparatus performs multiple exposure based on the contour line vector data, the positive side correction vector data, and the negative side correction vector data.

本発明の他の態様である露光方法は、パターンデータであるベクタデータを、光変調素子の投影エリアに対応するラスタデータに変換し、ラスタデータに基づいて多重露光を行う露光方法であって、パターン輪郭線を表す輪郭線ベクタデータを、パターン輪郭線を一方向にシフトさせた輪郭線補正ベクタデータに変換し、輪郭線ベクタデータに基づく露光と、輪郭線補正ベクタデータに基づく露光とを組み合わせた多重露光を行う。主走査方向に沿った光変調素子の投影エリアサイズ以下のシフト量によって、輪郭線ベクタデータを輪郭線補正ベクタデータに変換し、あるいは、輪郭線ベクタデータを、副走査方向に応じた方向にシフトした副走査方向補正ベクタデータに変換することができる。 The exposure method according to another aspect of the present invention is an exposure method in which vector data, which is pattern data, is converted into raster data corresponding to the projection area of the optical modulation element, and multiple exposures are performed based on the raster data. The contour line vector data representing the pattern contour line is converted into the contour line correction vector data in which the pattern contour line is shifted in one direction, and the exposure based on the contour line vector data and the exposure based on the contour line correction vector data are combined. Multiple exposures are performed. The contour line vector data is converted into contour line correction vector data or the contour line vector data is shifted in the direction according to the sub scanning direction according to the shift amount equal to or less than the projection area size of the optical modulation element along the main scanning direction. It can be converted into the sub-scanning direction correction vector data.

本発明によれば、露光装置において、パターン傾斜線を滑らかに形成することができる。 According to the present invention, the pattern inclination line can be smoothly formed in the exposure apparatus.

本実施形態である露光装置のブロック図である。It is a block diagram of the exposure apparatus which is this embodiment. 一部のパターン輪郭線に対するベクタデータの補正処理を示した図である。It is a figure which showed the correction processing of the vector data for some pattern contour lines. 副走査方向Yに沿った露光量を示した図である。It is a figure which showed the exposure amount along the sub-scanning direction Y. 図3のY方向ラインの位置を示した図である。It is a figure which showed the position of the Y direction line of FIG. 露光、現像などの後工程を経て得られたパターンを示した図である。It is a figure which showed the pattern obtained through the post-process such as exposure and development. ベクタデータの補正処理の変形例示した図である。It is a figure which illustrated the modification of the correction processing of vector data.

以下では、図面を参照して本発明の実施形態について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図1は、本実施形態である露光装置のブロック図である。 FIG. 1 is a block diagram of the exposure apparatus according to the present embodiment.

露光装置10は、フォトレジストなどの感光材料を塗布、あるいは貼り付けた基板(露光対象)Wへ光を照射することによってパターンを形成するマスクレス露光装置であり、基板Wを搭載するステージ12が主走査方向に沿って移動可能に設置されている。ステージ駆動機構15は、ステージ12を主走査方向X、副走査方向Yに沿って移動させる。 The exposure apparatus 10 is a maskless exposure apparatus that forms a pattern by irradiating a substrate (exposure target) W to which a photosensitive material such as a photoresist is applied or attached with light, and a stage 12 on which the substrate W is mounted is provided. It is installed so that it can be moved along the main scanning direction. The stage drive mechanism 15 moves the stage 12 along the main scanning direction X and the sub-scanning direction Y.

露光装置10は、DMD22、照明光学系23、投影光学系25とを備え、パターン光を投影する複数の露光ヘッド18が設けられている(図1では1つの露光ヘッドのみ図示)。光源20は、例えば放電ランプによって構成され、光源駆動部21によって駆動される。 The exposure apparatus 10 includes a DMD 22, an illumination optical system 23, and a projection optical system 25, and is provided with a plurality of exposure heads 18 for projecting pattern light (only one exposure head is shown in FIG. 1). The light source 20 is composed of, for example, a discharge lamp, and is driven by the light source driving unit 21.

パターンデータであるCAD/CAMデータは、ベクタデータとして露光装置10へ入力される。露光装置10のコントローラ30では、描画座標系によって表されるベクタデータが、露光装置10に固有の露光座標系に変換され、ベクタデータ処理回路(ベクタデータ補正処理部)に送られる。露光座標系は、露光装置の主走査方向X、副走査方向Yに沿って規定されている。 The CAD / CAM data, which is the pattern data, is input to the exposure apparatus 10 as vector data. In the controller 30 of the exposure apparatus 10, the vector data represented by the drawing coordinate system is converted into the exposure coordinate system peculiar to the exposure apparatus 10 and sent to the vector data processing circuit (vector data correction processing unit). The exposure coordinate system is defined along the main scanning direction X and the sub-scanning direction Y of the exposure apparatus.

ベクタデータ処理回路40では、所定の露光範囲に応じた(露光座標系の)ベクタデータが抽出され、ラスタデータ変換回路(ラスタデータ変換処理部)26へ送信される。また、後述するように、一部のベクタデータに対してデータ補正処理が行われる。 In the vector data processing circuit 40, vector data (of the exposure coordinate system) corresponding to a predetermined exposure range is extracted and transmitted to the raster data conversion circuit (raster data conversion processing unit) 26. Further, as will be described later, data correction processing is performed on some vector data.

ラスタデータ変換回路26では、ベクタデータがラスタデータに変換され、1つのマイクロミラーの投影領域(単位露光領域、セルともいう)に応じたセルサイズメモリ(図示せず)に格納され、そして、セルサイズ以下のエリア(以下、サブセルという)単位のビットマップデータに変換される。コントローラ30からの制御信号に従って所定アドレスのビットマップデータがラスタデータ変換回路26から読み出され、露光データとしてDMD駆動回路24へ送られる。 In the raster data conversion circuit 26, vector data is converted into raster data, stored in a cell size memory (not shown) corresponding to a projection area (unit exposure area, also referred to as a cell) of one micromirror, and then a cell. It is converted into bitmap data in units of areas (hereinafter referred to as subcells) that are smaller than the size. Bitmap data at a predetermined address is read from the raster data conversion circuit 26 according to the control signal from the controller 30, and is sent to the DMD drive circuit 24 as exposure data.

DMD22は、微小マイクロミラーを2次元配列させた光変調素子アレイであり、各マイクロミラーは、姿勢を変化させることによって光の反射方向を選択的に切り替える。DMD駆動回路24によって各ミラーが姿勢制御されることにより、パターンに応じた光が、投影光学系25を介して基板Wの表面に投影(結像)される。 The DMD 22 is a light modulation element array in which micromicromirrors are arranged two-dimensionally, and each micromirror selectively switches the light reflection direction by changing its posture. By controlling the attitude of each mirror by the DMD drive circuit 24, light corresponding to the pattern is projected (imaged) on the surface of the substrate W via the projection optical system 25.

ステージ駆動機構15は、コントローラ30からの制御信号に従い、ステージ12を移動させる。コントローラ(露光制御部)30は、露光装置10の動作を制御し、位置検出部(図示せず)から送られてくるステージ位置情報に基づいて、ステージ駆動機構15、DMD駆動回路24、ベクタデータ処理回路40などへの制御信号を出力する。露光動作中、ステージ12は一定速度で移動し、DMD22全体の投影エリア(以下、露光エリアという)は、基板Wの移動に伴って基板Wの上を主走査方向Xに沿って相対移動する。なお、ステージ12は、連続的移動の代わりに間欠移動してもよい。 The stage drive mechanism 15 moves the stage 12 according to a control signal from the controller 30. The controller (exposure control unit) 30 controls the operation of the exposure device 10, and based on the stage position information sent from the position detection unit (not shown), the stage drive mechanism 15, the DMD drive circuit 24, and vector data. A control signal to the processing circuit 40 or the like is output. During the exposure operation, the stage 12 moves at a constant speed, and the projection area of the entire DMD 22 (hereinafter referred to as an exposure area) moves relative to the substrate W along the main scanning direction X as the substrate W moves. The stage 12 may move intermittently instead of continuously moving.

コントローラ30は、ベクタデータ処理回路40、DMD駆動回路24などを制御し、多重露光、すなわち、前の露光エリアの一部領域と重なる位置で次の露光を順次行うオーバーラップ露光を実行する。露光動作は所定のピッチ間隔に従って実行され、DMD22の各マイクロミラーを露光エリアの相対位置(ステージ位置)に応じて変調することにより、露光エリアの位置に描くべきパターンの光が順次投影される。 The controller 30 controls the vector data processing circuit 40, the DMD drive circuit 24, and the like, and executes multiple exposure, that is, overlap exposure in which the next exposure is sequentially performed at a position overlapping a part of the previous exposure area. The exposure operation is executed according to a predetermined pitch interval, and by modulating each micromirror of the DMD 22 according to the relative position (stage position) of the exposure area, the light of the pattern to be drawn at the position of the exposure area is sequentially projected.

各露光ヘッド18による投影エリア、すなわちDMD22全体の投影エリア(以下、露光エリアという)EAは、主走査方向Xに対して微小角度だけ傾斜した領域となり、傾斜した状態で主走査方向Xに相対移動させる。これによって、露光点(露光ショット中心位置)が副走査方向Yに沿って徐々にシフトしていく。 The projection area by each exposure head 18, that is, the projection area (hereinafter referred to as the exposure area) EA of the entire DMD 22 is a region inclined by a small angle with respect to the main scanning direction X, and moves relative to the main scanning direction X in the inclined state. Let me. As a result, the exposure point (exposure shot center position) is gradually shifted along the sub-scanning direction Y.

多重露光動作のピッチ間隔は、単位露光領域の整数倍から外れるように設定され、また、副走査方向Yに沿ったシフト量も単位露光領域よりも小さい。そのため、単位露光領域内では主走査方向X、副走査方向Yいずれにも多数の露光点が分布し、単位露光領域以下の分解能によるパターン形成が可能となる。 The pitch interval of the multiple exposure operation is set so as to deviate from an integral multiple of the unit exposure region, and the shift amount along the sub-scanning direction Y is also smaller than the unit exposure region. Therefore, a large number of exposure points are distributed in both the main scanning direction X and the sub-scanning direction Y within the unit exposure region, and it is possible to form a pattern with a resolution equal to or less than the unit exposure region.

さらに本実施形態では、主走査方向Xに関し、多重露光動作のピッチ間隔の調整によって見かけ上の分解能を向上させる一方、副走査方向Yに関しては、ベクタデータの補正処理によって、見かけ上の分解能を向上させている。以下、これについて詳述する。 Further, in the present embodiment, the apparent resolution is improved by adjusting the pitch interval of the multiple exposure operation with respect to the main scanning direction X, while the apparent resolution is improved by correcting the vector data with respect to the sub-scanning direction Y. I'm letting you. This will be described in detail below.

図2は、一部のパターン輪郭線に対するベクタデータの補正処理を示した図である。図2では、露光座標系(X−Y)によって表している。 FIG. 2 is a diagram showing correction processing of vector data for a part of pattern contour lines. In FIG. 2, it is represented by the exposure coordinate system (XY).

ベクタデータは、パターンデータ(図形データ)の輪郭線の始点、終点の2次元座標によって定義されるベクトルデータであり、描画データの表現単位で規定される(例えば1μm)。ここでは、パターンの一部輪郭線BD0を表すベクタデータが、点P1〜P4の位置座標によって表されている。 The vector data is vector data defined by the two-dimensional coordinates of the start point and the end point of the contour line of the pattern data (graphic data), and is defined by the expression unit of the drawing data (for example, 1 μm). Here, the vector data representing the partial contour line BD0 of the pattern is represented by the position coordinates of the points P1 to P4.

上述したように、ラスタデータ変換回路26では、輪郭線BD0のベクタデータが、サブセル単位のビットマップデータであるラスタデータRDに変換される。ラスタデータRD0は、マイクロミラーのセルサイズC(単位露光領域)を主走査方向X、副走査方向Yに沿ってn分割(nは整数、ここではn=16)したサブセルを単位として配列したビットマップデータとして表され、その輪郭部分Tには階段状の段差が生じている。主走査方向Xに関しては、露光動作のピッチ間隔を調整することによって1/2サブセル単位の分解能を実現している。 As described above, in the raster data conversion circuit 26, the vector data of the contour line BD0 is converted into raster data RD, which is bitmap data for each subcell. Raster data RD0 is a bit in which the cell size C (unit exposure area) of the micromirror is divided into n along the main scanning direction X and the sub scanning direction Y (n is an integer, in this case n = 16) and arranged in units of subcells. It is represented as map data, and a step-like step is formed in the contour portion T thereof. With respect to the main scanning direction X, the resolution in units of 1/2 subcell is realized by adjusting the pitch interval of the exposure operation.

多重露光動作では、基板W上に形成すべきパターンのベクタデータに基づいて繰り返し露光を行うが、ここでは、シフト補正下ベクタデータと、元のベクタデータを順次ラスタデータ変換回路26へ送る。すなわち、多重露光動作の露光ステップごとに、シフト補正したベクタデータを基に作成された露光データと、シフトされていないベクタデータを基に作成された露光データとを交互に用いて露光する。 In the multiple exposure operation, repeated exposure is performed based on the vector data of the pattern to be formed on the substrate W. Here, the vector data under shift correction and the original vector data are sequentially sent to the raster data conversion circuit 26. That is, for each exposure step of the multiple exposure operation, the exposure data created based on the shift-corrected vector data and the exposure data created based on the unshifted vector data are alternately used for exposure.

ベクタデータ処理回路40では、まず、輪郭線BD0のベクタデータを補正せずに抽出する(Step1)。次の露光動作では、ベクタデータの抽出処理後、輪郭線BD0のベクタデータに対して座標変換処理を行い、副走査方向Yに沿って所定のシフト量ΔSだけシフトさせた輪郭線BD+のベクタデータ(輪郭線補正ベクタデータ)に変換(補正)する。 In the vector data processing circuit 40, first, the vector data of the contour line BD0 is extracted without correction (Step 1). In the next exposure operation, after the vector data extraction processing, the vector data of the contour line BD0 is subjected to the coordinate conversion processing, and the vector data of the contour line BD + shifted by a predetermined shift amount ΔS along the sub-scanning direction Y. Convert (correct) to (contour line correction vector data).

サブセルサイズをSCで表すと、シフト量ΔSは、副走査方向Yに沿って1/2×SCの距離に相当する。図2に示すように、輪郭線BD+は、輪郭線BD0の外側、すなわちパターン境界ラインからパターン外部側へ平行に移動させたラインであり、輪郭線BD0と輪郭線BD+との距離間隔Dは、セルサイズCおよびサブセルサイズSCよりも小さい。輪郭線BD+のベクタデータは、位置座標P1’〜P4’によって表される。輪郭線BD+のベクタデータがラスタデータRD+に変換されるため、ラスタデータRD+の階段状輪郭線T+も、サブセルサイズ1/2×SC分だけ副走査方向Yへ全体的にシフトしている(Step2)。 When the subcell size is expressed by SC, the shift amount ΔS corresponds to a distance of 1/2 × SC along the subscan direction Y. As shown in FIG. 2, the contour line BD + is a line moved parallel to the outside of the contour line BD0, that is, from the pattern boundary line to the outside of the pattern, and the distance interval D between the contour line BD0 and the contour line BD + is It is smaller than the cell size C and the subcell size SC. The vector data of the contour line BD + is represented by the position coordinates P1'to P4'. Since the vector data of the contour line BD + is converted into the raster data RD +, the stepped contour line T + of the raster data RD + is also shifted as a whole in the sub-scanning direction Y by the subcell size 1/2 × SC (Step 2). ).

多重露光動作では、同じ露光領域に所定の露光回数(例えば数十回)に従って露光動作が行われるが、その間、Step1、Step2が繰り返し行われる。この処理は、図2に示した輪郭線BD0のベクタデータだけでなく、全ベクタデータに対して行われる。ただし、露光座標系X−Yに対してX方向、Y方向に平行でない傾斜線・曲線を表すベクタデータに対してのみ行うようにしてもよい。 In the multiple exposure operation, the exposure operation is performed on the same exposure area according to a predetermined number of exposures (for example, several tens of times), during which Step1 and Step2 are repeatedly performed. This processing is performed not only on the vector data of the contour line BD0 shown in FIG. 2 but also on all the vector data. However, it may be performed only for vector data representing slope lines / curves that are not parallel to the X direction and the Y direction with respect to the exposure coordinate system XY.

図3は、副走査方向Yに沿った露光量を示した図である。図4は、図3のY方向ラインの位置を示した図である。ただし、図4では、説明のために便宜上サブセルサイズSCをセルサイズCの4分割としている。 FIG. 3 is a diagram showing an exposure amount along the sub-scanning direction Y. FIG. 4 is a diagram showing the position of the Y direction line of FIG. However, in FIG. 4, for convenience of explanation, the subcell size SC is divided into four parts of the cell size C.

図3には、図4のラインA−Bに沿った露光量(特に、Y方向の位置(1)と位置(2)との間)の露光量を示している。基板Wの上に形成された感光材料は、閾値以上の露光量で感光し、閾値以上の領域がパターンとして現れる。上述したように、DMD22の露光エリアは主走査方向Xに対して微小角度傾斜し、多重露光動作の間、露光点がセルサイズ以下のピッチ間隔で副走査方向Yへシフトする。そのため、輪郭線BD0のベクタデータに基づいて露光が行われると、その露光量M0は図3に示すラインとして表され、一定の傾きをもってパターン外側に向けて減少していく。 FIG. 3 shows the exposure amount along the lines AB of FIG. 4 (particularly, between the position (1) and the position (2) in the Y direction). The photosensitive material formed on the substrate W is exposed to an exposure amount equal to or higher than the threshold value, and a region equal to or higher than the threshold value appears as a pattern. As described above, the exposure area of the DMD 22 is tilted by a small angle with respect to the main scanning direction X, and the exposure points are shifted to the sub-scanning direction Y at pitch intervals equal to or less than the cell size during the multiple exposure operation. Therefore, when exposure is performed based on the vector data of the contour line BD0, the exposure amount M0 is represented as a line shown in FIG. 3, and decreases toward the outside of the pattern with a constant inclination.

一方、輪郭線BD+のベクタデータに基づいた露光が行われると、その露光量M+は、同様に一定の傾きをもってパターン外側に向けて減少するラインとなり、露光量M0に対して副走査方向Yに1/2×SCだけシフトしたラインとなる。その結果、露光量M0と露光量M+とを合わせた露光量Mは、閾値近傍で傾きが一定のラインとなり、その傾きは、露光量M0および露光量M+の傾きと実質的に等しい。 On the other hand, when the exposure is performed based on the vector data of the contour line BD +, the exposure amount M + becomes a line that similarly decreases toward the outside of the pattern with a constant inclination, and is in the sub-scanning direction Y with respect to the exposure amount M0. The line is shifted by 1/2 x SC. As a result, the exposure amount M, which is the sum of the exposure amount M0 and the exposure amount M +, becomes a line having a constant slope near the threshold value, and the slope is substantially equal to the slopes of the exposure amount M0 and the exposure amount M +.

その結果、X方向に沿った輪郭線(エッジ)ELは、サブセルの端辺位置ではなくサブセル内部に形成され、1/2×SCの分解能によるパターン形成が実現される。副走査方向Yに沿った露光ピッチ間隔は変更せずに、見かけ上副走査方向Yの分解能が1/2×SCとなり、主走査方向Xの見かけ上分解能と等しい。 As a result, the contour line (edge) EL along the X direction is formed inside the subcell instead of the end edge position of the subcell, and pattern formation with a resolution of 1/2 × SC is realized. The exposure pitch interval along the sub-scanning direction Y is not changed, and the apparent resolution of the sub-scanning direction Y is 1/2 × SC, which is equal to the apparent resolution of the main scanning direction X.

図5は、露光、現像などの後工程を経て得られたパターンを示した図である。図5に示すように、パターンPの傾斜ラインPLは、サブセルサイズSC以下の分解能で形成され、段差が抑えられたラインとなる。 FIG. 5 is a diagram showing a pattern obtained through post-processes such as exposure and development. As shown in FIG. 5, the inclined line PL of the pattern P is formed with a resolution equal to or less than the subcell size SC, and is a line in which a step is suppressed.

このように本実施形態によれば、露光装置10において、ベクタデータ処理回路40が、輪郭線BD0のベクタデータを、±Y方向(輪郭線外側、および/または輪郭線内側方向)へシフトさせた輪郭線補正ベクタデータBD+に変換し、元の輪郭線ベクタデータBD0と輪郭線補正ベクタデータBD+を交互に用いて露光データを作成し、多重露光動作を行う。 As described above, according to the present embodiment, in the exposure apparatus 10, the vector data processing circuit 40 shifts the vector data of the contour line BD0 in the ± Y direction (outside the contour line and / or inside the contour line). It is converted into contour line correction vector data BD +, exposure data is created by alternately using the original contour line vector data BD0 and contour line correction vector data BD +, and multiple exposure operations are performed.

一般的に、形成するパターンの滑らかさは、サブセル単位のビットマップデータの分解能、すなわちセルサイズメモリの規模に比例する。しかしながら、上述したベクタデータの補正により、セルサイズメモリの規模を抑えながら、滑らかなパターン形成が可能となる。すなわち、回路規模を複雑、大型化することなく、簡易な演算処理によってパターンの傾斜線を滑らかにすることができる。なお、元の輪郭線のベクタデータの露光回数を、多重露光回数の半分以下にすることによって、パターンのエッジ部分をより明確にすることができる。 In general, the smoothness of the formed pattern is proportional to the resolution of the bitmap data in subcell units, that is, the size of the cell size memory. However, by correcting the vector data described above, smooth pattern formation becomes possible while suppressing the scale of the cell size memory. That is, the slope line of the pattern can be smoothed by a simple arithmetic process without increasing the circuit scale and the size. By reducing the number of exposures of the vector data of the original contour line to half or less of the number of multiple exposures, the edge portion of the pattern can be made clearer.

本実施形態では、輪郭線のベクタデータのシフト量を1つとして、補正しない輪郭線のベクタデータと交互に利用して多重露光動作を行っているが、異なるシフト量で複数のシフト補正ベクタデータを作成し、順に利用して多重露光動作を行ってもよい。また、輪郭線のベクタデータを副走査方向Yの正方向(+Y)側でなく、逆(負)方向(−Y)へシフトさせてもよい。さらには、1つの輪郭線のベクタデータを、正負両方向にシフト補正させてもよい。 In the present embodiment, the shift amount of the contour line vector data is set as one, and the multiple exposure operation is performed by alternately using the uncorrected contour line vector data, but a plurality of shift correction vector data with different shift amounts. May be created and used in order to perform a multiple exposure operation. Further, the vector data of the contour line may be shifted not in the positive direction (+ Y) side of the sub-scanning direction Y but in the reverse (negative) direction (−Y). Further, the vector data of one contour line may be shift-corrected in both positive and negative directions.

図6は、複数のシフト量でベクタデータ補正処理を行う変形例を示した図である。 FIG. 6 is a diagram showing a modified example in which vector data correction processing is performed with a plurality of shift amounts.

ここでは、輪郭線BD0のベクタデータに対し、1/2×SC(=ΔS)だけ+Y方向にシフトさせた輪郭線BD+のベクタデータ、SC(=Δ2S)だけ+Y方向にシフトさせた輪郭線BD2+のベクタデータ、1/2×SC(=ΔS)だけ−Y方向にシフトさせた輪郭線BD−のベクタデータを生成する。そして、輪郭線BD0、BD+、BD2+、BD−のベクタデータを順に繰り返し用いて多重露光動作を行う。これによって、セル分割数1/64相当の滑らかさのパターンを形成することができる。 Here, with respect to the vector data of the contour line BD0, the vector data of the contour line BD + shifted in the + Y direction by 1/2 × SC (= ΔS), and the contour line BD2 + shifted in the + Y direction by only SC (= Δ2S). Vector data of contour line BD − shifted in the −Y direction by 1/2 × SC (= ΔS) is generated. Then, the multiple exposure operation is performed by repeatedly using the vector data of the contour lines BD0, BD +, BD2 +, and BD− in this order. Thereby, a smooth pattern corresponding to the number of cell divisions of 1/64 can be formed.

また、輪郭線BD0のベクタデータに対し、1/2×SC(=ΔS)だけ+Y方向にシフトさせた輪郭線BD+のベクタデータと、1/2×SC(=ΔS)だけ−Y方向にシフトさせた輪郭線BD−のベクタデータを生成し、3つの輪郭線のベクタデータを順に繰り返し用いながら多重露光動作を行うようにしてもよい。このような多重露光動作によれば、補正しない元の輪郭線のベクタデータは、多重露光回数の半分以下の露光回数分使用されることになる。 Further, the vector data of the contour line BD + shifted in the + Y direction by 1/2 × SC (= ΔS) with respect to the vector data of the contour line BD0 and the vector data of the contour line BD + shifted in the −Y direction by 1/2 × SC (= ΔS). The vector data of the contour line BD− may be generated, and the multiple exposure operation may be performed while repeatedly using the vector data of the three contour lines in order. According to such a multiple exposure operation, the vector data of the original contour line that is not corrected is used for the number of exposures that is half or less of the number of multiple exposures.

なお、複数のシフト量を用いる場合、シフト量を表す参照テーブルをメモリなどに記憶し、コントローラ30が参照テーブルを用いてベクタデータ処理回路40を制御して順次輪郭線のベクタデータを変換するようにしてもよい。また、ベクタデータの変換(補正)処理は、コントローラ30など他の回路で行ってもよい。サブセルサイズSCについても、セルサイズメモリの規模に合わせ、セルサイズCを16分割以外の分割数で分割してもよい。 When a plurality of shift amounts are used, a reference table representing the shift amount is stored in a memory or the like, and the controller 30 controls the vector data processing circuit 40 using the reference table to sequentially convert the vector data of the contour line. You may do it. Further, the vector data conversion (correction) processing may be performed by another circuit such as the controller 30. Regarding the subcell size SC, the cell size C may be divided by a number of divisions other than 16 divisions according to the scale of the cell size memory.

本実施形態では、輪郭線のベクタデータを副走査方向Yに沿ってシフトさせる補正処理をおこなっているが、これに限定されるものではなく、ベクタデータの表現可能な範囲で所定の一方向に沿ってシフトさせるようにしてもよい。また、ベクタデータの補正処理は、露光装置以外の演算処理部などで行うように構成してもよい。 In the present embodiment, the correction process for shifting the vector data of the contour line along the sub-scanning direction Y is performed, but the present invention is not limited to this, and the vector data is in a predetermined one direction within the expressible range of the vector data. It may be shifted along. Further, the vector data correction process may be configured to be performed by an arithmetic processing unit other than the exposure apparatus.

10 露光装置
22 DMD(光変調素子アレイ)
30 コントローラ
40 ベクタデータ処理回路(ベクタデータ補正処理部)


10 Exposure device 22 DMD (light modulation element array)
30 Controller 40 Vector data processing circuit (Vector data correction processing unit)


Claims (10)

複数の光変調素子を2次元配列させた光変調素子アレイと、
パターンデータであるベクタデータを、ラスタデータに変換するラスタデータ変換処理部と、
パターン輪郭線を表すベクタデータを、パターン輪郭線を一方向に沿ってシフトさせた輪郭線補正ベクタデータに変換するベクタデータ補正処理部とを備え、
輪郭線ベクタデータと、輪郭線補正ベクタデータとに基づいて、多重露光を行うことを特徴とする露光装置。
An optical modulation element array in which a plurality of light modulation elements are arranged two-dimensionally,
A raster data conversion processing unit that converts vector data, which is pattern data, into raster data,
It is provided with a vector data correction processing unit that converts vector data representing a pattern contour line into contour line correction vector data in which the pattern contour line is shifted along one direction.
An exposure apparatus characterized in that multiple exposures are performed based on contour line vector data and contour line correction vector data.
前記ベクタデータ補正処理部が、異なるシフト量で、輪郭線ベクタデータを輪郭線補正ベクタデータに順次変換することを特徴とする請求項1に記載の露光装置。 The exposure apparatus according to claim 1, wherein the vector data correction processing unit sequentially converts contour line vector data into contour line correction vector data with different shift amounts. 前記ベクタデータ補正処理部が、シフト量を周期的に変えながら、輪郭線ベクタデータを輪郭線補正ベクタデータに順次変換することを特徴とする請求項1または2に記載の露光装置。 The exposure apparatus according to claim 1 or 2, wherein the vector data correction processing unit sequentially converts contour line vector data into contour line correction vector data while periodically changing the shift amount. 前記ベクタデータ補正処理部が、輪郭線ベクタデータを、一方向の正側へシフトした正側補正ベクタデータと、前記一方向の負側へシフトした負側補正ベクタデータとに順次変換し、
輪郭線ベクタデータと、正側補正ベクタデータと、負側補正ベクタデータとに基づいて、多重露光を行うことを特徴とする請求項1乃至3のいずれかに記載の露光装置。
The vector data correction processing unit sequentially converts the contour line vector data into positive side correction vector data shifted to the positive side in one direction and negative side correction vector data shifted to the negative side in the one direction.
The exposure apparatus according to any one of claims 1 to 3, wherein multiple exposures are performed based on the contour line vector data, the positive side correction vector data, and the negative side correction vector data.
前記ベクタデータ補正処理部が、光変調素子の投影エリアサイズ以下のシフト量で、輪郭線ベクタデータを、複数の輪郭線補正ベクタデータに順次変換することを特徴とする請求項1乃至4のいずれかに記載の露光装置。 Any of claims 1 to 4, wherein the vector data correction processing unit sequentially converts contour line vector data into a plurality of contour line correction vector data with a shift amount equal to or less than the projection area size of the light modulation element. The exposure device described in Crab. 前記シフト量が、主走査方向の分解能に応じたシフト量であることを特徴とする請求項5に記載の露光装置。 The exposure apparatus according to claim 5, wherein the shift amount is a shift amount according to the resolution in the main scanning direction. 前記ベクタデータ補正処理部が、輪郭線ベクタデータを、副走査方向に応じた方向にシフトした副走査方向補正ベクタデータに変換することを特徴とする請求項1乃至6のいずれかに記載の露光装置。 The exposure according to any one of claims 1 to 6, wherein the vector data correction processing unit converts the contour line vector data into sub-scanning direction correction vector data shifted in a direction corresponding to the sub-scanning direction. Device. パターンデータであるベクタデータを、光変調素子の投影エリアに対応するラスタデータに変換し、
ラスタデータに基づいて多重露光を行う露光方法であって、
パターン輪郭線を表す輪郭線ベクタデータを、パターン輪郭線を一方向にシフトさせた輪郭線補正ベクタデータに変換し、
輪郭線ベクタデータに基づく露光と、輪郭線補正ベクタデータに基づく露光とを組み合わせた多重露光を行うことを特徴とする露光方法。
Vector data, which is pattern data, is converted into raster data corresponding to the projection area of the light modulation element.
An exposure method that performs multiple exposures based on raster data.
The contour line vector data representing the pattern contour line is converted into the contour line correction vector data in which the pattern contour line is shifted in one direction.
An exposure method characterized by performing multiple exposures in which exposure based on contour line vector data and exposure based on contour line correction vector data are combined.
主走査方向に沿った光変調素子の投影エリアサイズ以下のシフト量によって、輪郭線ベクタデータを輪郭線補正ベクタデータに変換することを特徴とする請求項8に記載の露光方法。 The exposure method according to claim 8, wherein the contour line vector data is converted into the contour line correction vector data by a shift amount equal to or less than the projection area size of the light modulation element along the main scanning direction. 輪郭線ベクタデータを、副走査方向に応じた方向にシフトした副走査方向補正ベクタデータに変換することを特徴とする請求項8または9に記載の露光方法。 The exposure method according to claim 8 or 9, wherein the contour line vector data is converted into sub-scanning direction correction vector data shifted in a direction corresponding to the sub-scanning direction.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240361A (en) * 1994-03-01 1995-09-12 Fujitsu Ltd Resist pattern formation method
JP2001042544A (en) * 1999-07-30 2001-02-16 Dainippon Printing Co Ltd High-definition exposure method and apparatus
US6425669B1 (en) * 2000-05-24 2002-07-30 Ball Semiconductor, Inc. Maskless exposure system
US20020171047A1 (en) * 2001-03-28 2002-11-21 Chan Kin Foeng Integrated laser diode array and applications
JP2009290119A (en) * 2008-05-30 2009-12-10 Orc Mfg Co Ltd Exposure device capable of correcting drawing data
JP2018081153A (en) * 2016-11-14 2018-05-24 株式会社アドテックエンジニアリング Direct imaging exposure apparatus and direct imaging exposure method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3791259B2 (en) * 1999-10-07 2006-06-28 セイコーエプソン株式会社 Outline smoothing processing method
JP4235972B2 (en) * 2002-08-29 2009-03-11 株式会社オーク製作所 Pattern drawing apparatus and pattern drawing method
JP2007078764A (en) * 2005-09-12 2007-03-29 Fujifilm Corp Exposure apparatus and exposure method
JP5414281B2 (en) * 2009-01-05 2014-02-12 大日本スクリーン製造株式会社 Exposure apparatus and exposure method
JP5373518B2 (en) 2009-09-15 2013-12-18 大日本スクリーン製造株式会社 Data conversion method, drawing system, and program
JP5881313B2 (en) * 2011-05-30 2016-03-09 株式会社オーク製作所 Exposure equipment
JP5810031B2 (en) * 2012-04-27 2015-11-11 株式会社日立ハイテクノロジーズ Semiconductor circuit pattern measuring apparatus and method
JP6486167B2 (en) * 2015-03-30 2019-03-20 株式会社オーク製作所 Exposure apparatus, photometric apparatus for exposure apparatus, and exposure method
US11520239B2 (en) * 2016-02-22 2022-12-06 Asml Netherlands B.V. Separation of contributions to metrology data
WO2017171891A1 (en) * 2016-04-02 2017-10-05 Intel Corporation Systems, methods, and apparatuses for modeling reticle compensation for post lithography processing using machine learning algorithms
JP6497494B1 (en) * 2017-07-14 2019-04-10 大日本印刷株式会社 Shape correction apparatus and shape correction method for figure pattern

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240361A (en) * 1994-03-01 1995-09-12 Fujitsu Ltd Resist pattern formation method
JP2001042544A (en) * 1999-07-30 2001-02-16 Dainippon Printing Co Ltd High-definition exposure method and apparatus
US6425669B1 (en) * 2000-05-24 2002-07-30 Ball Semiconductor, Inc. Maskless exposure system
US20020171047A1 (en) * 2001-03-28 2002-11-21 Chan Kin Foeng Integrated laser diode array and applications
JP2009290119A (en) * 2008-05-30 2009-12-10 Orc Mfg Co Ltd Exposure device capable of correcting drawing data
JP2018081153A (en) * 2016-11-14 2018-05-24 株式会社アドテックエンジニアリング Direct imaging exposure apparatus and direct imaging exposure method

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