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JP2021020833A - Processing method and processing device of substrate - Google Patents

Processing method and processing device of substrate Download PDF

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JP2021020833A
JP2021020833A JP2019139354A JP2019139354A JP2021020833A JP 2021020833 A JP2021020833 A JP 2021020833A JP 2019139354 A JP2019139354 A JP 2019139354A JP 2019139354 A JP2019139354 A JP 2019139354A JP 2021020833 A JP2021020833 A JP 2021020833A
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substrate
irradiation
deformed portion
laser beam
line
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宇航 宮崎
Takahiro Miyazaki
宇航 宮崎
前田 憲一
Kenichi Maeda
憲一 前田
井上 修一
Shuichi Inoue
修一 井上
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Mitsuboshi Diamond Industrial Co Ltd
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Priority to TW109123881A priority patent/TW202120447A/en
Priority to CN202010688472.6A priority patent/CN112297251A/en
Publication of JP2021020833A publication Critical patent/JP2021020833A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/225Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising for scoring or breaking, e.g. tiles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/24Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising with cutting discs
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/08Severing cooled glass by fusing, i.e. by melting through the glass
    • C03B33/082Severing cooled glass by fusing, i.e. by melting through the glass using a focussed radiation beam, e.g. laser

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  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Laser Beam Processing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

To provide a processing method of a substrate capable of obtaining a high-quality product by suppressing occurrence of thermal effects such as chipping and HAZ when parting deformed portions by a laser beam; and to provide a processing device of the substrate.SOLUTION: A processing method of a substrate provided with deformed portions such as a radium and a notch at a corner and around there includes a step of forming a scribe line having a modified layer inside the substrate, which becomes brittle due to being irradiated with a laser beam along parting schedule lines S3 and S4 that separate the deformed portions. When the parting schedule lines S3 and S4 are irradiated with the laser beam, the irradiation is started from a position entering the inside near a substrate end, and the laser beam irradiation is made to stop at a position entering inside the substrate near the terminations of the parting schedule lines.SELECTED DRAWING: Figure 6

Description

本発明は、ガラス板等の透明な脆性材料からなる基板の加工方法並びに加工装置に関する。特に本発明は、周辺に異形部分を備えたモバイル用液晶セル基板を、大判のマザー基板から切り出す加工方法並びに加工装置に関する。 The present invention relates to a processing method and a processing apparatus for a substrate made of a transparent brittle material such as a glass plate. In particular, the present invention relates to a processing method and a processing apparatus for cutting out a mobile liquid crystal cell substrate provided with a deformed portion in the periphery from a large-format mother substrate.

液晶セルの単位基板は、透明なガラス板にカラーフィルタがパターン形成された第一基板(CF側基板ともいう)と、透明なガラス板に薄膜トランジスタTFT(Thin Film Transistor)がパターン形成された第二基板(TFT側基板ともいう)とを、液晶を封入するシール材を挟んで貼り合わせて形成されている。
大判のマザー基板から個々の液晶セルの単位基板に分割する際に、格子状の分断予定ラインに沿って切り出す加工が行われる。このとき、一般的には基板の表裏両面を、カッターホイールまたはレーザー光を用いてスクライブラインを加工し、ブレイクする方法が用いられている(特許文献1、2参照)。
The unit substrate of the liquid crystal cell is a first substrate (also called a CF side substrate) in which a color filter is patterned on a transparent glass plate, and a second substrate in which a thin film transistor (TFT) is patterned on the transparent glass plate. A substrate (also referred to as a TFT-side substrate) is formed by laminating a sealing material for encapsulating a liquid crystal.
When the large-sized mother substrate is divided into unit substrates for individual liquid crystal cells, processing is performed to cut out along a grid-like scheduled division line. At this time, a method is generally used in which a scribe line is processed by using a cutter wheel or a laser beam on both the front and back surfaces of the substrate to break the substrate (see Patent Documents 1 and 2).

特開2006−137641号公報Japanese Unexamined Patent Publication No. 2006-137641 特開2015−13783号公報JP-A-2015-13783

ところで、モバイル用液晶セルのセル基板では、後述する図4に示すように、コーナー部分にアール(円弧部)2を有し、短手方向の側辺にノッチ3と呼ばれる開口凹部が形成されることがある(本発明ではこのアールやノッチを異形部分という)。
マザー基板から異形部分を含んだ基板を切り出す加工を行う場合については、従来と同様に、カッターホイールによる加工か、レーザスクライブによる加工のいずれかで行われているが、これまでは異形部分を考慮した最適な加工方法についてあまり検討されていなかった。そのため、異形部分の加工品質については必ずしも十分高いものが得られなかった。
そこで本発明は、マザー基板から異形部分を含んだ基板を切り出す加工について、異形部分特有の問題を見つけ出して、異形部分を含む基板加工を行う場合に、これまで以上に優れた加工方法を提供することを目的とする。
By the way, as shown in FIG. 4 described later, the cell substrate of the mobile liquid crystal cell has a radius (arc portion) 2 at the corner portion, and an opening recess called a notch 3 is formed on the side side in the lateral direction. In some cases (in the present invention, this radius or notch is referred to as a deformed portion).
When cutting out a substrate including a deformed part from a mother substrate, it is processed by either a cutter wheel or a laser scribe as in the past, but until now, the deformed part has been considered. There was not much consideration on the optimum processing method. Therefore, the processing quality of the deformed portion was not always sufficiently high.
Therefore, the present invention provides a more excellent processing method than ever before for processing a substrate including a deformed portion from a mother substrate by finding a problem peculiar to the deformed portion and processing the substrate including the deformed portion. The purpose is.

上記目的を達成するために本発明では次のような技術的手段を講じた。即ち本発明では、透明な脆性材料からなり、かつ、周辺に異形部分を備えたセル基板を大判のマザー基板から切り出す基板加工方法であって、
マザー基板にカッターホイールを用いて直線で格子状のスクライブラインを加工するとともにこのスクライブラインに沿ってマザー基板を分断して個々の単位基板を切り出すスクライブ/ブレイク工程と、
切り出された単位基板にレーザー光を用いて前記異形部分を加工する異形部加工工程とからなる基板加工方法を備える構成とした。
In order to achieve the above object, the following technical measures have been taken in the present invention. That is, the present invention is a substrate processing method for cutting out a cell substrate made of a transparent brittle material and having a deformed portion around it from a large-sized mother substrate.
A scribe / break process that processes a straight grid-like scribe line on the mother board using a cutter wheel, divides the mother board along this scribe line, and cuts out individual unit boards.
The structure is provided with a substrate processing method including a deformed portion processing step of processing the deformed portion by using a laser beam on the cut out unit substrate.

すなわち、これまでマザー基板から単位基板を切り出す加工を行う場合には、異形部分の有無に関係なく、カッターホイールによる機械加工か、レーザ加工かのいずれかが採用されていた。
しかしながら、カッターホイールによる機械加工を採用した場合は、アールやノッチからなる異形部分を加工する際、進行方向に対してカッターホイールの刃による前後の食い込み幅があるので曲率半径が小さい曲線のスクライブラインについては精度よく加工することが難しく、曲率半径が小さい曲線加工部分の加工品質が低下することとなっていた。
一方、レーザー光を用いてレーザスクライブを行う場合はスクライブライン近傍に多少なりとも熱的影響が加わることになる。したがって熱的影響を極力避けたい部分については分断予定ラインからのマージンを余分に設けて(あるいは端材領域を設けて)熱的影響を抑える必要が生じていた。
そこで、マザー基板から格子状に単位基板を切り出す加工については、カッターホイールを直線状に移動させて切り出すこととし、切り出された単位基板の異形部分を加工するときはレーザ光を用いて加工することで曲率半径が小さくても分断予定ラインに沿って精度よく加工できるようにした。
That is, until now, when cutting out a unit substrate from a mother substrate, either machining with a cutter wheel or laser machining has been adopted regardless of the presence or absence of a deformed portion.
However, when machining with a cutter wheel is used, when machining a deformed part consisting of a radius or notch, there is a front-back bite width due to the blade of the cutter wheel in the direction of travel, so a curved scribing line with a small radius of curvature. It was difficult to process with high accuracy, and the processing quality of the curved part with a small radius of curvature was deteriorated.
On the other hand, when laser scribing is performed using laser light, a slight thermal effect is applied to the vicinity of the scribing line. Therefore, it has been necessary to provide an extra margin from the planned division line (or to provide a scrap area) to suppress the thermal effect on the portion where the thermal effect is desired to be avoided as much as possible.
Therefore, when cutting out the unit board from the mother board in a grid pattern, move the cutter wheel in a straight line to cut out, and when processing the deformed part of the cut out unit board, use laser light. Even if the radius of curvature is small, it can be processed accurately along the planned division line.

本発明によれば、マザー基板から単位基板を切り出す際に分断予定ラインの全体を占める直線状のスクライブラインをカッターホイールで加工することにより熱影響を受けることなくきれいな分断端面で切り出すことができ、しかも熱的影響が及ばないのでマージン領域を小さく抑えることができる。また、切り出された単位基板にアールなどの異形部分を加工する際には、レーザー光で加工を行うことにより分断予定ラインに沿って正確にスクライブラインを加工することができる。このようにして、異形部分を有する基板の加工に適した加工を行うことができる。 According to the present invention, when a unit substrate is cut out from a mother substrate, a linear scribe line that occupies the entire planned division line can be cut out with a clean divided end face without being affected by heat by processing with a cutter wheel. Moreover, since it is not affected by heat, the margin area can be kept small. Further, when processing a deformed portion such as a radius on the cut-out unit substrate, the scribe line can be accurately processed along the planned division line by processing with laser light. In this way, processing suitable for processing a substrate having a deformed portion can be performed.

また、レーザー光によるスクライブラインの加工では、従来、レーザー光は、基板から外側に離れた位置で照射を開始し、照射した状態のまま基板端面から基板上の分断予定ライン上に入り、そのまま分断予定ライン上を移動してその終端で基板端面から抜ける手法(ここではこの手法を「外切り」と称する)で行われていた。 Further, in the processing of a scribe line by laser light, conventionally, the laser light starts irradiation at a position away from the substrate, enters the planned division line on the substrate from the end face of the substrate in the irradiated state, and divides as it is. It was performed by a method of moving on a planned line and exiting from the end face of the substrate at the end (this method is referred to as "outer cutting" here).

しかし、この「外切り」の手法では、分断予定ラインの始端側及び終端側に位置する基板端にチッピングと呼ばれる小さなカケやHAZ(Heat Affected Zone)と呼ばれる変色などの熱影響が発生することがあり、この部分で商品品質が劣化して歩留まりが悪くなる現象がみられた。 However, with this "outer cutting" method, heat effects such as small chips called chipping and discoloration called HAZ (Heat Affected Zone) may occur at the board edges located on the start and end sides of the planned division line. In this part, the product quality deteriorated and the yield deteriorated.

これについて原因を検討した。フォーカスビームのレーザー光(例えば波長1064nmのIRレーザー)をガラス基板の表面に照射した場合、図9(a)に示すように、ガラス基板の端辺(周縁)から離れた内部の位置では、基板表面から入射したレーザー光は基板内部で収束し、これによって基板が加工される。
一方、「外切り」の手法で照射されたレーザー光は、基板端上に照射されたときに、その一部が図9(b)の太線で示すように、基板端面から入射し、屈折により基板の厚さ方向と直交する方向(基板端面から基板内側方向)に進んで基板の内部深くで収束する。また、レーザー光の一部は細線で示すように基板端面で反射して基板裏面に抜ける。このような基板内部まで深く拡散する屈折光や基板端面での反射光がチッピングやHAZなどの熱影響の原因と考えられる。
The cause was examined for this. When the surface of the glass substrate is irradiated with the laser light of the focus beam (for example, an IR laser having a wavelength of 1064 nm), as shown in FIG. 9A, the substrate is located at an internal position away from the edge (periphery) of the glass substrate. The laser beam incident from the surface converges inside the substrate, which processes the substrate.
On the other hand, when the laser beam irradiated by the "outer cutting" method is applied to the edge of the substrate, a part of the laser beam is incident from the edge of the substrate as shown by the thick line in FIG. It proceeds in the direction orthogonal to the thickness direction of the substrate (from the end face of the substrate to the inside of the substrate) and converges deep inside the substrate. Further, a part of the laser beam is reflected by the end surface of the substrate as shown by a thin line and escapes to the back surface of the substrate. It is considered that the refracted light diffused deeply into the substrate and the reflected light on the end face of the substrate are the causes of heat effects such as chipping and HAZ.

そこで、異形部分についてレーザー光によるスクライブを行う場合に、レーザ光の基板端での反射による熱影響の発生を抑制してさらに高品質の加工を行うために、以下のような加工方法を講じた。
すなわち、透明な脆性材料からなり、かつ、周辺に異形部分を備えたセル基板を大判のマザー基板から切り出す基板加工方法であって、マザー基板にカッターホイールを用いて直線で格子状のスクライブラインを加工するとともにこのスクライブラインに沿ってマザー基板を分断して個々の単位基板を切り出すスクライブ/ブレイク工程と、切り出された単位基板にレーザー光を用いて前記異形部分を加工する異形部加工工程とからなり、前記異形部加工工程は、前記異形部分を区分する分断予定ラインに沿ってレーザー光を照射して基板内部に脆弱となった改質層を有するスクライブラインを形成する工程を含み、前記レーザー光を分断予定ラインに沿って照射する際に基板端近傍で内側に入り込んだ位置から照射を開始し、分断予定ライン終端近傍の基板内側に入り込んだ位置でレーザー照射を止めるようにした。
Therefore, when scribing a deformed part with laser light, the following processing method was adopted in order to suppress the occurrence of thermal influence due to reflection of the laser light at the substrate edge and perform higher quality processing. ..
That is, it is a substrate processing method in which a cell substrate made of a transparent brittle material and having a deformed portion around it is cut out from a large-sized mother substrate, and a straight grid-like scribing line is formed on the mother substrate by using a cutter wheel. From the scribing / break process in which the mother substrate is divided along the scribing line to cut out individual unit substrates while processing, and the deformed portion processing step in which the deformed portion is processed by using laser light on the cut out unit substrate. The deformed portion processing step includes a step of irradiating a laser beam along a planned division line for dividing the deformed portion to form a scribing line having a fragile modified layer inside the substrate, and the laser. When irradiating light along the scheduled division line, the irradiation was started from the position where it entered the inside near the edge of the substrate, and the laser irradiation was stopped at the position where it entered the inside of the substrate near the end of the scheduled division line.

ここで前記レーザー光の照射開始位置並びに停止位置は、基板端から30〜200μm離れた位置で行うようにするのがよい。 Here, it is preferable that the irradiation start position and the stop position of the laser light are performed at a position separated from the edge of the substrate by 30 to 200 μm.

これによれば、レーザー光を分断予定ラインに沿って照射する際に基板端近傍で内側に入り込んだ位置から照射を開始し、分断予定ライン終端近傍の基板内側位置でレーザー照射を止めるようにしたので、「外切り」の手法のように、レーザー光の一部が基板端面から入射して屈折により基板厚み方向に直交する方向に沿って内部深くまで浸透したり、上面から入射したレーザー光の一部が基板端面で反射して基板裏面に抜けるような現象を解消し、これによりチッピングやHAZなどの熱影響の発生を抑制して高品位の製品を得ることができるようになる。 According to this, when irradiating the laser beam along the scheduled division line, the irradiation is started from the position where it enters the inside near the edge of the substrate, and the laser irradiation is stopped at the position inside the substrate near the end of the scheduled division line. Therefore, as in the "outer cutting" method, a part of the laser beam enters from the end face of the substrate and penetrates deeply inside along the direction orthogonal to the thickness direction of the substrate due to refraction, or the laser beam incident from the upper surface. It is possible to eliminate the phenomenon that a part of the substrate is reflected by the end surface of the substrate and escapes to the back surface of the substrate, thereby suppressing the occurrence of thermal influences such as chipping and HAZ, and obtaining a high-quality product.

また別の観点からなされた本発明の基板加工装置は、周辺に異形部分を備えたセル基板を大判のマザー基板から切り出す基板加工装置であって、マザー基板にカッターホイールで格子状のスクライブラインを加工するとともにこのスクライブラインに沿ってマザー基板を分断して個々の単位基板を切り出すスクライブ/ブレイク手段と、切り出された単位基板に対し、前記異形部分を区分する分断予定ラインに沿ってレーザー光を照射して基板内部に脆弱となった改質層を形成する異形部加工手段とを備え、更に、前記レーザー光が、前記分断予定ラインに沿って照射される際に基板端近傍で内側に入り込んだ位置から照射を開始し、分断予定ライン終端近傍の基板内側に入り込んだ位置で照射を停止するように制御する制御部を備える。 The substrate processing apparatus of the present invention made from another viewpoint is a substrate processing apparatus for cutting out a cell substrate having a deformed portion around it from a large-sized mother substrate, and a grid-like scribing line is formed on the mother substrate with a cutter wheel. A scribing / breaking means for cutting out individual unit boards by dividing the mother substrate along this scribing line while processing, and laser light is applied to the cut out unit boards along the planned division line for dividing the deformed portion. It is provided with a deformed portion processing means for forming a fragile modified layer inside the substrate by irradiation, and further, when the laser beam is irradiated along the planned division line, it enters the inside near the edge of the substrate. It is provided with a control unit that controls so that irradiation is started from a position where the irradiation is started and the irradiation is stopped at a position inside the substrate near the end of the scheduled division line.

本発明にかかるセル基板を切り出すためのマザー基板を示す平面図並びの正面図。The front view of the plan view which shows the mother substrate for cutting out the cell substrate which concerns on this invention. マザー基板から切り出された短冊状基板を示す平面図。The plan view which shows the strip-shaped substrate cut out from the mother substrate. 短冊状基板から切り出された単位基板を示す平面図。The plan view which shows the unit substrate cut out from the strip-shaped substrate. 単位基板にアール並びにノッチを加工したセル基板を示す平面図。The plan view which shows the cell substrate which processed the radius and the notch on the unit substrate. 本発明にかかる基板加工装置の概略的な正面図。The schematic front view of the substrate processing apparatus which concerns on this invention. セル基板のアールの加工を説明するための平面図。The plan view for demonstrating the processing of the radius of a cell substrate. セル基板のノッチの加工を説明するための平面図。The plan view for demonstrating the processing of the notch of a cell substrate. 本発明に用いられるレーザー光の別例を示す説明図。Explanatory drawing which shows another example of the laser beam used in this invention. レーザー光照射による熱影響の原因を説明するための図。The figure for demonstrating the cause of the thermal influence by laser light irradiation.

以下、本発明方法の詳細を図に示した実施形態に基づき説明する。ここでは、大判のマザー基板Mから、図4に示すようなコーナー部分にアール2を有し、短手方向の側辺に凹状に開口するノッチ3を有する矩形状のモバイル用セル基板1を切り出して加工する場合について説明する。セル基板1の平面からみた各部の寸法は、長辺が150mmであり、短辺が70mmであり、アールが7mmRであり、ノッチの深さW1が5mmであり、ノッチの幅W2が40mmである。
また、マザー基板Mは、先に述べたように、ガラス板にカラーフィルタがパターン形成された第一基板(CF側基板)と、ガラス板にTFTがパターン形成された第二基板(TFT側基板)とを、液晶を封入するシール材を挟んで貼り合わせて形成されている。
Hereinafter, the details of the method of the present invention will be described based on the embodiment shown in the figure. Here, a rectangular mobile cell substrate 1 having a radius 2 at a corner portion as shown in FIG. 4 and a notch 3 having a concave opening on the side in the lateral direction is cut out from the large-format mother substrate M. The case of processing is described. The dimensions of each part of the cell substrate 1 as viewed from the plane are: long side is 150 mm, short side is 70 mm, radius is 7 mmR, notch depth W1 is 5 mm, and notch width W2 is 40 mm. ..
Further, as described above, the mother substrate M includes a first substrate (CF side substrate) in which a color filter is patterned on a glass plate and a second substrate (TFT side substrate) in which a TFT is patterned on a glass plate. ) And are bonded together with a sealing material that encloses the liquid crystal sandwiched between them.

図1〜図3は、マザー基板Mからセル基板の元となる単位基板M2を切り出す工程の一例を示すものである。図1はマザー基板Mから八つの単位基板M2を切り出す場合を示す。
先ず、図1並びに図5に示すように、カッターホイール6を用いてマザー基板Mの上面に、X方向の分断予定ラインに沿ってカッターホイールを圧接してスクライブすることによりスクライブラインS1を刻む。次いで、基板を反転させて前記スクライブラインの対称位置に同様のスクライブラインを刻む。この場合、基板の上下にカッターホイールを配置して基板の上下両面を同時にスクライブ加工するようにしてもよい。スクライブラインは基板の厚み方向にクラック(溝)ができる程度の切り込みで形成して、後工程でブレイクバーを押しつけて基板を撓ませることによりスクライブラインに沿って分断するのであるが、板厚全部にクラックを浸透させて完全分断(フルカット)するようにしてもよい(本発明では、このようなスクライブラインの加工と分断とを同時に行って単位基板を切り出す加工についても本発明でいうスクライブ/ブレイク工程に含まれるものとする)。スクライブラインS1から分断されたマザー基板は、図2に示すように、それぞれ四つの単位基板領域を含む短冊状基板M1となる。
1 to 3 show an example of a step of cutting out a unit substrate M2 which is a base of a cell substrate from a mother substrate M. FIG. 1 shows a case where eight unit substrates M2 are cut out from the mother substrate M.
First, as shown in FIGS. 1 and 5, a scribe line S1 is engraved on the upper surface of the mother substrate M by using the cutter wheel 6 by pressing the cutter wheel along the scheduled division line in the X direction and scribing. Next, the substrate is inverted and a similar scribe line is carved at a symmetrical position of the scribe line. In this case, cutter wheels may be arranged above and below the substrate to scribe both the upper and lower surfaces of the substrate at the same time. The scribe line is formed with a notch to the extent that a crack (groove) is formed in the thickness direction of the substrate, and the substrate is bent by pressing the break bar in the subsequent process to divide it along the scribe line. In the present invention, the scribe / is also referred to in the present invention as to the process of cutting out the unit substrate by simultaneously processing and dividing the scribe line. It shall be included in the break process). As shown in FIG. 2, the mother substrate separated from the scribe line S1 becomes a strip-shaped substrate M1 including four unit substrate regions, respectively.

次いで、短冊状基板M1を90度回転させたあと、分断予定ラインに沿って上記と同じようにカッターホイールで基板M1の上下両面にスクライブラインS2を刻み、上記同様に当該スクライブラインS2に沿って分断して、図3に示すように、コーナー部分のアールやノッチが未加工の矩形状の単位基板M2を切り出す。 Next, after rotating the strip-shaped substrate M1 by 90 degrees, scribe lines S2 are carved on both the upper and lower sides of the substrate M1 with a cutter wheel in the same manner as above along the planned division line, and the same as above, along the scribe line S2. After dividing, as shown in FIG. 3, a rectangular unit substrate M2 having unprocessed corners and notches is cut out.

次いで、レーザー光照射ノズル7からのレーザー光を単位基板M2のアール2やノッチ3を区分する分断予定ラインS3、S4に沿って照射して基板内部に脆弱となった改質層を有するスクライブラインを加工する。レーザー光の移動軌跡は、後述する基板載置用のテーブル8とレーザー光照射ノズル7のスクライブヘッド11を同時にX−Y方向に移動させることにより、曲線などの任意の軌跡を描くことができる。なお、レーザー光は、波長1μm前後のピコ秒IRレーザーを用いるのが好ましいが、波長1200nm以下の範囲で選択することができる。 Next, the laser light from the laser light irradiation nozzle 7 is irradiated along the planned division lines S3 and S4 that divide the radius 2 and the notch 3 of the unit substrate M2, and a scribing line having a fragile modified layer inside the substrate. To process. As for the movement locus of the laser light, an arbitrary locus such as a curve can be drawn by simultaneously moving the table 8 for mounting the substrate and the scribe head 11 of the laser light irradiation nozzle 7 described later in the XY directions. The laser light preferably uses a picosecond IR laser having a wavelength of about 1 μm, but can be selected in a wavelength range of 1200 nm or less.

このレーザー光をアール2並びにノッチ3のそれぞれの分断予定ラインS3、S4に照射する際、基板端から少し内側に入り込んだ位置から照射を開始し、分断予定ラインの終端近傍位置まで移動したときにレーザー照射を停止するようにするのが望ましい。即ち、レーザー照射ノズル7が基板外部から分断予定ラインS3、S4上を通って反対側の基板端に抜ける際に、図6、図7に示すように、基板端からL1だけ入り込んだP1の位置でレーサー照射を開始し、分断予定ライン終端近傍で基板端からL2だけ離れたP2の位置で照射をやめるようにする。上記L1並びにL2は30〜200μmの範囲から選択され、特に50〜100μmとするのがよい。このレーザー光の照射、停止の制御は後記する制御部で予めプログラミングすることにより行うことができる。 When irradiating this laser beam on the planned division lines S3 and S4 of Earl 2 and Notch 3, irradiation is started from a position slightly inward from the edge of the substrate and moved to a position near the end of the planned division line. It is desirable to stop the laser irradiation. That is, when the laser irradiation nozzle 7 passes from the outside of the substrate over the scheduled division lines S3 and S4 and exits to the opposite substrate edge, as shown in FIGS. 6 and 7, the position of P1 which has entered only L1 from the substrate edge. The racer irradiation is started at, and the irradiation is stopped at the position of P2, which is L2 away from the substrate edge near the end of the scheduled division line. The above L1 and L2 are selected from the range of 30 to 200 μm, and particularly preferably 50 to 100 μm. The control of irradiating and stopping the laser beam can be performed by programming in advance in the control unit described later.

次いで、ブレイクバー、スチームブレイクなどを用いて端材を分断予定ラインから分断除去することでアールやノッチを加工する。 Next, a break bar, a steam break, or the like is used to divide and remove the offcuts from the planned division line to process the radius and notch.

図5は本発明方法を実施するための基板加工装置Aの概略的な構成を示すものである。カッターホイール6は作業ステージとなるテーブル8の上方に配置されたスクライブヘッド9に昇降可能に取り付けられ、スクライブヘッド9は装置の機枠に設けられたガイド10に沿ってヘッド移動機構(図示外)により水平なX方向に移動できるように組み込まれている。また、レーザー照射ノズル7は、上部のガイド10に沿って移動可能なスクライブヘッド11に支持されている。 FIG. 5 shows a schematic configuration of a substrate processing apparatus A for carrying out the method of the present invention. The cutter wheel 6 is vertically attached to a scribe head 9 arranged above a table 8 serving as a work stage, and the scribe head 9 is a head moving mechanism (not shown) along a guide 10 provided in the machine frame of the apparatus. It is built in so that it can move in the horizontal X direction. Further, the laser irradiation nozzle 7 is supported by a scribe head 11 that can move along the upper guide 10.

また、基板Wを載置するテーブル8は、X方向及びこれに直交するY方向に移動させるテーブル移動機構12を備えている。このテーブル移動機構12は、例えばネジ軸をモータで回動させることによりレールに沿って移動するようにした公知の機構が用いられる。 Further, the table 8 on which the substrate W is placed is provided with a table moving mechanism 12 for moving the substrate W in the X direction and the Y direction orthogonal to the X direction. As the table moving mechanism 12, for example, a known mechanism is used in which the screw shaft is rotated by a motor to move along the rail.

更に、基板加工装置Aは、各スクライブヘッド9、11やテーブル8の移動、レーザー光発信器13などの制御を行う制御部14を備えている。制御部14は、CPU等のプロセッサと、ROM、RAM等の記憶部と、各種インターフェースとを有するコンピュータシステムである。制御部14は、記憶部に保存されたプログラムを実行することで各種制御動作を行う。 Further, the substrate processing apparatus A includes a control unit 14 that controls the movement of the scribe heads 9 and 11 and the table 8 and the laser light transmitter 13. The control unit 14 is a computer system having a processor such as a CPU, a storage unit such as a ROM and a RAM, and various interfaces. The control unit 14 performs various control operations by executing a program stored in the storage unit.

上記のようにして、マザー基板Mから単位基板M2を切り出す直線部分のスクライブラインS1、S2をカッターホイールで加工することにより熱影響を受けることなくきれいな分断端面で切り出すことができ、切り出された単位基板にアールなどの異形部分を加工する際には、レーザー光で行うことにより分断予定ラインに沿って正確にスクライブラインを加工することができる。
特に本発明では、レーザー光を基板端からL1だけ入り込んだ位置で照射を開始し、分断予定ライン終端近傍で基板端からL2だけ離れた位置で照射をやめるようにすることにより、アール2並びにノッチ3の加工時にチッピングやHAZなどの熱影響を抑制することが可能となる。なお、分断予定ラインの両端に残ったレーザー光の非照射部分L1、L2は強制的に引きちぎられることになるが、その部分は30〜200μmで非常に短く、引きちぎりによって発生するバリがごく僅かであるので品質上問題はない。
As described above, by processing the scribe lines S1 and S2 of the straight portion for cutting out the unit board M2 from the mother board M with a cutter wheel, it is possible to cut out a clean divided end face without being affected by heat, and the cut out unit. When processing a deformed portion such as a radius on a substrate, it is possible to accurately process a scribe line along a planned division line by using a laser beam.
In particular, in the present invention, the irradiation is started at a position where the laser beam enters only L1 from the edge of the substrate, and the irradiation is stopped at a position near the end of the planned division line and at a position L2 away from the edge of the substrate. It is possible to suppress heat effects such as chipping and HAZ during the processing of 3. The non-irradiated parts L1 and L2 of the laser beam remaining at both ends of the scheduled division line will be forcibly torn off, but that part is very short at 30 to 200 μm, and burrs generated by the tearing are very small. Therefore, there is no quality problem.

尚、発明者等が、TFT側基板の厚みが150μm、CF側基板の厚みが150μmの基板に対し、波長1064nmで、パルス幅15ピコ秒、パルスエネルギー80μJ、パルス間隔1.5μmのピコ秒IRレーザーを用いて、上記した手法でアール並びにノッチの加工を行った結果、分断端面でのチッピングは全くなく、HAZも殆ど見られなかった。 The inventors have described a picosecond IR with a wavelength of 1064 nm, a pulse width of 15 picoseconds, a pulse energy of 80 μJ, and a pulse interval of 1.5 μm with respect to a substrate having a TFT-side substrate thickness of 150 μm and a CF-side substrate thickness of 150 μm. As a result of processing the radius and the notch by the above-mentioned method using a laser, there was no chipping on the divided end face, and almost no HAZ was observed.

本発明において、上記レーザー光は、図8に示すような焦点が分散した収差レーザー光を用いることができる。この収差レーザー光は、レーザー光発振器13から発振されたパルスレーザー光を、光変調器15で分割されたバースト列の集合として出射させて平凸レンズ16aからなる収差生成部材16に送り、平凸レンズ16aの凸面側から出射させることにより収差レーザー光とすることができる。この収差レーザー光は、レーザーエネルギーを各焦点部で蓄積させた狭くて長い高エネルギー分布領域(レーザーフィラメント)Fを形成することができ、基板に厚みがあってもその内部で長く浸透した脆弱な改質層を加工することができ、確実に分断することができる。 In the present invention, as the laser light, an aberration laser light having a dispersed focus as shown in FIG. 8 can be used. This aberration laser light emits pulsed laser light oscillated from the laser light oscillator 13 as a set of burst trains divided by the optical modulator 15 and sends it to an aberration generating member 16 composed of a plano-convex lens 16a, and the plano-convex lens 16a Aberration laser light can be obtained by emitting light from the convex side of the lens. This aberration laser light can form a narrow and long high energy distribution region (laser filament) F in which laser energy is stored at each focal point, and even if the substrate is thick, it is fragile and penetrates long inside the substrate. The modified layer can be processed and can be reliably divided.

以上、本発明の代表的な実施例について説明したが、本発明は必ずしも上記の実施形態に特定されるものでない。例えば、アール2は真円の円弧の他に、C状の場合もあり、ノッチ3の形態も凹状の他にV字形やU字形などの異形で形成される場合もある。また、ブレイク対象となる基板は液晶表示パネルに限らず、2枚のガラス板を貼り合わせた貼り合わせ基板や、或いは一枚のガラス板であってもよい。その他本発明では、その目的を達成し、請求の範囲を逸脱しない範囲内で適宜修正、変更することができる。 Although typical examples of the present invention have been described above, the present invention is not necessarily specified in the above-described embodiment. For example, the radius 2 may be C-shaped in addition to a perfect circular arc, and the notch 3 may be formed in a deformed shape such as a V-shape or a U-shape in addition to the concave shape. Further, the substrate to be broken is not limited to the liquid crystal display panel, and may be a bonded substrate in which two glass plates are bonded together, or a single glass plate. Others In the present invention, the object can be achieved and modifications and changes can be made as appropriate without departing from the claims.

本発明は、セル基板のコーナーや周辺にレーザー光を用いてアールや凹部を加工するのに適用される。 The present invention is applied to process rounds and recesses using laser light at the corners and periphery of a cell substrate.

A 加工装置
M マザー基板
M2 単位基板
S1 スクライブライン
S2 スクライブライン
S3 アールの分断予定ライン
S4 ノッチの分断予定ライン
1 セル基板
2 アール
3 ノッチ
4 第1基板
5 第2基板
6 カッターホイール
7 レーザー照射ノズル
13 レーザー光発振器
14 制御部

A Processing equipment M Mother substrate M2 Unit substrate S1 Scribline S2 Scribline S3 R's scheduled division line S4 Notch's scheduled division line 1 Cell substrate 2 R 3 Notch 4 1st substrate 5 2nd substrate 6 Cutter wheel 7 Laser irradiation nozzle 13 Laser optical oscillator 14 control unit

Claims (6)

透明な脆性材料からなり、かつ、周辺に異形部分を備えたセル基板を大判のマザー基板から切り出す基板加工方法であって、
マザー基板にカッターホイールを用いて直線で格子状のスクライブラインを加工するとともにこのスクライブラインに沿ってマザー基板を分断して個々の単位基板を切り出すスクライブ/ブレイク工程と、
切り出された単位基板にレーザー光を用いて前記異形部分を加工する異形部加工工程とからなる基板加工方法。
A substrate processing method in which a cell substrate made of a transparent brittle material and having a deformed portion around it is cut out from a large-sized mother substrate.
A scribe / break process that processes a straight grid-like scribe line on the mother board using a cutter wheel, divides the mother board along this scribe line, and cuts out individual unit boards.
A substrate processing method comprising a deformed portion processing step of processing the deformed portion by using a laser beam on a cut-out unit substrate.
前記異形部加工工程は、前記異形部分を区分する分断予定ラインに沿ってレーザー光を照射して基板内部に脆弱となった改質層を有するスクライブラインを形成する工程を含み、前記レーザー光を分断予定ラインに沿って照射する際に基板端近傍で内側に入り込んだ位置から照射を開始し、分断予定ライン終端近傍の基板内側に入り込んだ位置でレーザー照射を止めるようにした請求項1に記載の基板加工方法。 The deformed portion processing step includes a step of irradiating a laser beam along a planned division line for dividing the deformed portion to form a scribing line having a fragile modified layer inside the substrate, and the laser beam is used. The first aspect of claim 1, wherein when irradiating along the planned division line, the irradiation is started from a position where the irradiation is inside the substrate near the end of the substrate, and the laser irradiation is stopped at the position where the irradiation is inside the substrate near the end of the scheduled division line. Substrate processing method. 前記異形部分は、加工される基板のコーナー部に形成されるアール、周辺の一部に形成されるノッチのいずれかが少なくとも含まれる請求項1または請求項2に記載の基板加工方法。 The substrate processing method according to claim 1 or 2, wherein the deformed portion includes at least one of a radius formed at a corner portion of the substrate to be processed and a notch formed in a part of the periphery. 前記レーザー光は、波長1200nm以下のピコ秒IRレーザーである請求項1〜請求項3のいずれかに記載の基板加工方法。 The substrate processing method according to any one of claims 1 to 3, wherein the laser light is a picosecond IR laser having a wavelength of 1200 nm or less. 前記レーザー光の照射開始位置並びに停止位置は基板端から30〜200μm離れた位置で行うようにした請求項2〜請求項4のいずれかに記載の基板加工方法。 The substrate processing method according to any one of claims 2 to 4, wherein the irradiation start position and the stop position of the laser light are performed at a position 30 to 200 μm away from the edge of the substrate. 透明な脆性材料からなり、かつ、周辺に異形部分を備えたセル基板を大判のマザー基板から切り出す基板加工装置であって、
前記マザー基板にカッターホイールで格子状のスクライブラインを加工するとともにこのスクライブラインに沿ってマザー基板を分断して個々の単位基板を切り出すスクライブ/ブレイク手段と、
切り出された前記単位基板に対し、前記異形部分を区分する分断予定ラインに沿ってレーザー光を照射して基板内部に脆弱となった改質層を形成する異形部加工手段とを備え、
更に、前記レーザー光が、前記分断予定ラインに沿って照射される際に基板端近傍で内側に入り込んだ位置から照射を開始し、分断予定ライン終端近傍の基板内側に入り込んだ位置で照射を停止するように制御する制御部を備えた基板加工装置。
A substrate processing device that cuts out a cell substrate made of a transparent brittle material and having a deformed portion around it from a large-sized mother substrate.
A scribe / break means for processing a grid-like scribe line on the mother substrate with a cutter wheel and dividing the mother substrate along the scribe line to cut out individual unit substrates.
The cut-out unit substrate is provided with a deformed portion processing means for forming a fragile modified layer inside the substrate by irradiating a laser beam along a planned division line for dividing the deformed portion.
Further, when the laser beam is irradiated along the scheduled division line, the irradiation is started from the position where it enters the inside near the edge of the substrate, and the irradiation is stopped at the position where it enters the inside of the substrate near the end of the scheduled division line. A substrate processing device provided with a control unit that controls the operation.
JP2019139354A 2019-07-30 2019-07-30 Processing method and processing device of substrate Abandoned JP2021020833A (en)

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WO2022264976A1 (en) * 2021-06-16 2022-12-22 Agc株式会社 Method for producing plate-shaped member and plate-shaped member

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TWI838980B (en) * 2022-11-25 2024-04-11 國立中興大學 Substrate marking system

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022264976A1 (en) * 2021-06-16 2022-12-22 Agc株式会社 Method for producing plate-shaped member and plate-shaped member

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