JP2019529720A - Vapor deposition equipment - Google Patents

Abstract

It is a technical object of the present invention to provide a vapor deposition apparatus that can protect the surface of a substrate from contaminants attached to a vapor deposition nozzle. To this end, the vapor deposition apparatus of the present invention is a vapor deposition apparatus for depositing one or more kinds of thin film forming materials on a substrate, and is used for a plurality of vapor depositions for injecting the first thin film forming material onto the substrate. A first linear evaporation source having a first conductive tube in which nozzles are arranged long in a first direction, and a part of the first thin film forming material to be sprayed provided between the first conductive tube and the substrate A stationary region member that includes a passage region portion that allows the substrate to pass through and a shielding region portion that blocks the remainder of the first thin film forming substance, and at least one of the plurality of vapor deposition nozzles. A first contamination prevention member for preventing contaminants attached to one deposition nozzle from moving to the substrate. [Selection] Figure 2

Description

  The present invention relates to a vapor deposition apparatus using a linear evaporation source.

  Generally, a vapor deposition apparatus forms a thin film made of a specific material on the surface of a wafer in a semiconductor manufacturing process, or forms a thin film of a desired material on the surface of a glass substrate or the like in manufacturing a large flat display device. It is used.

  Such a vapor deposition apparatus includes a vacuum chamber, a mounting part for providing a wafer, a substrate, etc. (hereinafter referred to as “substrate”) in the vacuum chamber, and a linear evaporation source for evaporating a thin film forming material on the surface of the substrate. .

  In particular, the linear evaporation source includes a crucible containing a thin film forming material, a heater for heating the crucible, and a plurality of vapor deposition nozzles arranged linearly to inject the heated thin film forming material onto the surface of the substrate. Including.

  However, the existing vapor deposition apparatus has a problem of polluting the contaminants attached to the vapor deposition nozzle to contaminate the surface of the substrate.

  In addition, there is a problem that a deviation occurs in the deposition thickness of the thin film forming material deposited on the surface of the substrate due to different spraying amounts of the respective deposition nozzles. That is, the deposition amount on the substrate may be small because the deposition amount of the deposition nozzle located relatively on the rear end side among the deposition nozzles may be relatively small with respect to the moving direction of the thin film forming substance from the linear evaporation source. There is a problem that deviation occurs.

  Even if two linear evaporation sources are used to deposit two different thin film forming materials, the temperatures for generating the required deposition rate (hereinafter referred to as “required deposition rate generation temperature”) are different from each other. There is a problem that deviation occurs in the deposition rate of the two kinds of thin film forming materials. For example, when the temperature of the crucible of each linear evaporation source is the same, a material for forming a thin film having a relatively high required deposition rate generation temperature has a problem that the deposition rate is relatively lowered, and the required deposition rate generation temperature is high. When the crucible temperature of the corresponding linear evaporation source is increased in order to increase the deposition rate of the thin film forming material, there is a problem that the thermal safety of the linear evaporation source is lowered.

  The technical subject of this invention is providing the vapor deposition apparatus which can protect the surface of a board | substrate from the contaminant attached to the nozzle for vapor deposition.

  Another technical object of the present invention is to provide a vapor deposition apparatus capable of minimizing a deviation in vapor deposition thickness of a thin film forming material deposited on the surface of a substrate.

  Still another technical problem of the present invention is that at least two kinds of thin film forming materials having different temperatures for generating a required deposition rate (hereinafter referred to as “required deposition rate temperatures”) are simultaneously deposited on the surface of the substrate. An object of the present invention is to provide a vapor deposition apparatus capable of preventing the relative reduction of the vapor deposition rate and ensuring the thermal safety of a linear evaporation source.

  Still another technical problem of the present invention is to provide a vapor deposition apparatus capable of making the vapor deposition rate ratio of at least two different thin film forming substances different from each other uniform at all positions on the substrate.

  To achieve the above object, a deposition apparatus according to an embodiment of the present invention is a deposition apparatus for depositing one or more thin film forming materials on a substrate, and injects the first thin film forming material onto the substrate. A first linear evaporation source having a first conductive tube in which a plurality of vapor deposition nozzles arranged long in a first direction is disposed between the first conductive tube and the substrate, and the first sprayed A fixed shielding member including a passage region portion that allows a part of the thin film forming material to pass through the substrate and a shielding region portion that blocks the rest of the first thin film forming material; and the fixed shielding member, And a first contamination prevention member for preventing contaminants attached to at least one vapor deposition nozzle of the plurality of vapor deposition nozzles from moving to the substrate.

  The first contamination prevention member may be provided so as to cross the passage region portion, and the passage region portion may be divided into first and second passage regions.

  The first contamination prevention member may be long provided across the passage region portion in the first direction, and the plurality of deposition nozzles may be arranged to correspond to the first contamination prevention member. it can.

  The vapor deposition apparatus according to the embodiment of the present invention further includes a first rotary shielding member that is rotatably provided on the fixed shielding member via a first hinge shaft and adjusts the width of the first passage region. Can be included.

  The first hinge shaft may be provided at a position that is perpendicular to a center of a side surface of the first contamination prevention member in the shielding region portion of the fixed shielding member.

  The width of the first passage region decreases linearly as it goes to the tip of the first conduction tube due to the rotation of the first rotary shielding member, and gradually increases as it goes to the end of the first conduction tube. It can be bigger.

  In the above-described vapor deposition apparatus according to the embodiment of the present invention, the fixed shielding member is rotatably provided via a second hinge shaft, and the width of the second passage region is extended to the tip of the first conductive tube. It may further include a second rotating type shielding member that is adjusted so as to be linearly smaller as it goes to the end of the first conductive tube and to be linearly larger as it goes to the end of the first conduction tube.

  The deposition apparatus according to the embodiment of the present invention may include the first and second driving units that apply a rotational force to the first and second rotary shielding members, and the shielding region of the fixed shielding member. A tip-side deposition rate sensor for measuring a deposition rate provided in a first portion corresponding to a tip portion of the first conduction tube; and a terminal portion of the first conduction tube in the shielding region portion of the fixed shielding member It may further include a terminal-side deposition rate sensor provided in the corresponding second part for measuring the deposition rate.

  If the front end side deposition rate measured by the front end side deposition rate sensor is larger than the end side deposition rate measured by the rear end side deposition rate sensor, each of the first and second driving units includes the first and second driving units. The first and second widths are such that each width of the second passage region decreases linearly as it goes to the tip of the first conduction tube, and increases linearly as it goes to the end of the first conduction tube. Each of the rotary shielding members can be rotated.

  The deposition apparatus according to the embodiment of the present invention described above is disposed on the left side of the first conductive tube to guide the second thin film forming material, and is disposed on the right side of the first conductive tube. A third conductive tube for guiding a third thin film forming material, which is the same material as the second thin film forming material, and the second and third thin film forming materials generate a required deposition rate. The required deposition rate generation temperature may be higher than that of the first thin film forming material.

  In the above-described vapor deposition apparatus according to the embodiment of the present invention, the fixed shielding member is provided with a second contamination prevention member corresponding to the second conduction tube, and the fixed shielding member is provided with the third conduction tube. And a third contamination prevention member provided so as to correspond to the above.

  Each of the second and third conductive tubes may be included in different second and third linear evaporation sources, respectively.

  The second and third conductive tubes may be disposed in parallel to the first conductive tube, and the second conductive tube, the first conductive tube, and the third conductive tube form an arc in this order. Can be arranged.

  The center of the arc may be located in the first portion of the substrate, and the first portion may be a portion corresponding to the center of the passage region portion.

  The deposition apparatus according to the embodiment of the present invention may further include one or more deposition rate measuring units provided in each of the first, second, and third conductive tubes to measure the deposition rate. .

  The deposition rate measuring unit includes a measurement nozzle provided to communicate with each of the first, second, and third conductive tubes, and one end of each of the first, second, and third conductive tubes. A measurement conducting tube for guiding the thin film forming material sprayed from the measuring nozzle, and a conductive tube provided at the other end of the measuring conducting tube for measuring the deposition rate of the sprayed thin film forming material And a side deposition rate sensor.

  The one or more deposition rate measuring units are provided at the front end portions of the first, second, and third conduction tubes, respectively, and measure the deposition rates of the front end side deposition rate measuring units; And a terminal-side deposition rate measuring unit which is provided at each terminal of the second and third conductive tubes and measures the deposition rate.

  The deposition apparatus according to the embodiment of the present invention may further include a substrate transfer unit that transfers the substrate in the second direction, and the first and second directions may be perpendicular to each other.

  As described above, the vapor deposition apparatus according to the embodiment of the present invention can have the following effects.

  According to the embodiment of the present invention, the first linear evaporation source having the first conductive tube for guiding the first thin film forming material, the stationary shielding member having the passage region portion and the shielding region portion, and the first contamination prevention. And a contamination structure attached to one or more of the plurality of deposition nozzles of the first conductive tube is blocked by the first contamination prevention member before moving to the surface of the substrate. The surface can be protected from contaminants.

  In addition, according to the embodiment of the present invention, since the technical configuration further including the first rotation type shielding member is provided, the spray amount of each vapor deposition nozzle gradually decreases toward the rear end of the first conductive tube. In addition, the width of the first passage region of the fixed shielding member gradually decreases as it goes to the tip of the first conduction tube due to the rotation of the first rotating shielding member, and becomes linear as it goes to the rear end of the first conduction tube. Thus, the deviation of the deposition thickness on the substrate that can occur in the longitudinal direction of the first conductive tube can be minimized.

  In addition, according to an embodiment of the present invention, a technical configuration further including second and third conductive tubes for guiding the second and third thin film forming materials, respectively, is provided. Even if the required deposition rate generation temperature of the three thin film forming materials is higher than the required deposition rate generation temperature of the first thin film forming material, which is different from these, the second and third thin film forming materials that are the same material are two. Provided from the second and third conductive tubes, which are two conductive tubes, it is possible to prevent a relative decrease in the deposition rate of these materials, and to have a relatively low required deposition rate generation temperature for the first thin film forming material. The thermal safety of each linear evaporation source can be ensured. For example, when the crucible temperatures of the first, second, and third linear evaporation sources are the same, the two second and third linear evaporation sources are also used for a thin film forming material having a relatively high required deposition rate generation temperature. Since the second and third thin film forming materials, which are the same materials, are provided, it is possible to prevent the deposition rate of these materials from decreasing relatively, and further, a relatively low requirement for the first thin film forming material is required. It can be operated at the deposition rate generation temperature, and the thermal safety of each linear evaporation source can be ensured.

  Further, according to the embodiment of the present invention, the second and third conductive tubes are arranged in parallel to the first conductive tube, and the second conductive tube, the first conductive tube, and the third conductive tube form an arc in this order. Therefore, the deposition rate ratio of at least two kinds of thin film forming materials different from each other can be made uniform at all positions on the substrate.

FIG. 5 is a partially cutaway cross-sectional view schematically showing a linear evaporation source used in each of the vapor deposition apparatuses according to the first, second and third embodiments of the present invention. 1 is a schematic view illustrating a vapor deposition apparatus according to a first embodiment of the present invention. It is the figure which looked at the vapor deposition apparatus of FIG. 2 from the 1st conduction tube. It is the figure which looked at the vapor deposition apparatus by the modification of 1st Example of this invention from the 1st conduction tube. It is the figure which showed roughly the vapor deposition apparatus by 2nd Example of this invention. It is the figure which showed roughly the vapor deposition apparatus by 3rd Example of this invention. It is the graph which showed the change of the vapor deposition rate by the transfer coordinate of a board | substrate in the vapor deposition apparatus of FIG. It is the graph which showed the change of the vapor deposition rate by the transfer coordinate of a board | substrate in the vapor deposition apparatus of FIG. FIG. 7 is a graph comparing the vapor deposition apparatus (linear arrangement) in FIG. 5 and the vapor deposition apparatus (arc arrangement) in FIG. 6 and showing a change in the deposition rate ratio according to the transfer coordinates of the substrate. (A) is the figure which showed schematically the vapor deposition rate measurement part with which each conduction tube was equipped, (b) is the front end side vapor deposition rate measurement part with which the front end and rear end of the conduction tube were each provided, and the rear end side It is the figure which showed the deposition rate measurement part.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily implement the embodiments. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein.

  FIG. 1 is a partially cut-away sectional view schematically showing a linear evaporation source used in each of the vapor deposition apparatuses according to the first, second and third embodiments of the present invention. FIG. 2 is a vapor deposition apparatus according to the first embodiment of the present invention. FIG. 3 is a diagram showing the vapor deposition apparatus of FIG. 2 as viewed from the first conductive tube.

  The deposition apparatus 100 according to the first embodiment of the present invention is a deposition apparatus for depositing one or more kinds of thin film forming materials on a substrate 10 as shown in FIGS. And a fixed shielding member 120 and a first contamination prevention member 130. Hereinafter, each component will be described in detail with reference to FIGS.

  As shown in FIGS. 1 and 2, the first linear evaporation source 110 is an apparatus for evaporating the first thin film forming material A and injecting it onto the substrate 10. For example, as shown in FIG. 1, the first linear evaporation source 110 guides the crucible 113 containing the first thin film forming material A and the first thin film forming material A of the crucible 113 in the first direction. The first conductive tube 112 extending in the first direction, the crucible 113, the heater 114 for heating the first conductive tube 112, and the first conductive tube 112 are linearly arranged along the longitudinal direction of the first conductive tube 112. A plurality of deposition nozzles 111 for spraying the first thin film forming substance A onto the substrate 10 may be included. For reference, referring to FIG. 1, the tip of the first conduction tube 112 is the left side of FIG. 1 and the portion adjacent to the crucible 113, and the end of the first conduction tube 112 is the right side of FIG. This is the part farthest away from the crucible 113. 3, the first conductive tube 112 is not shown in FIG. 3, but the tip of the first conductive tube 112 is disposed toward the top of FIG. The end is shown assuming it is located towards the bottom of FIG.

  As shown in FIGS. 2 and 3, the fixed shielding member 120 is partially provided so that the first thin film forming material A sprayed from the respective deposition nozzles 111 is guided only to the deposition region of the substrate 10. It is the component which shields. For example, as shown in FIGS. 2 and 3, the fixed shielding member 120 is provided between the first conductive tube 112 and the substrate 10, and the sprayed first thin film forming substance A is a deposition region of the substrate 10. As shown in FIG. 4, a passage region 121 that allows a part of the first thin film forming material A to pass through the substrate 10 and a shield that blocks the remainder of the first thin film forming material A that goes out of the deposition region of the substrate 10. The region portion 122 may be included.

  The first contamination prevention member 130 is a component that prevents a contaminant attached to at least one deposition nozzle of the plurality of deposition nozzles 111 from moving to the substrate 10, as shown in FIGS. 2 and 3. The fixed shielding member 120 may be provided. Accordingly, the contaminants attached to one or more of the plurality of vapor deposition nozzles 111 of the first conductive tube 112 are blocked by the first contamination prevention member 130 before moving to the surface of the substrate 10, so that the surface of the substrate 10 is removed. Can be protected from pollutants.

  Further, as shown in FIG. 3, the first contamination prevention member 130 is provided so as to cross the passage region portion 121, and the passage region portion 121 can be divided into first and second passage regions 121 a and 121 b. . In addition, the first contamination prevention member 130 may be configured to be long in the first direction across the passage region 121 (see FIG. 3), and the plurality of deposition nozzles 111 may be based on a vertical distance with respect to the substrate 10. It may be arranged to correspond to the first contamination prevention member 130 (see FIG. 2).

  In addition, the vapor deposition apparatus 100 according to the first embodiment of the present invention may further include a first rotary shielding member 140 as shown in FIGS. The first rotary shielding member 140 is rotatably provided on the fixed shielding member 120 via the first hinge shaft 141 and adjusts the width of the first passage region 121a (see “W” in FIG. 3). do. Therefore, by adjusting the width of the first passage region 121a (see “W” in FIG. 3), the deviation of the deposition thickness of the first thin film forming material A deposited on the surface of the substrate 10 is minimized. Can do.

  In particular, as shown in FIG. 3, the first hinge shaft 141 may be provided at a position perpendicular to the center of the side surface of the first contamination prevention member 130 in the shielding region portion 122 of the fixed shielding member 120. it can. Further, the width of the first passage region 121a (see “W” in FIG. 3) is linear as it goes to the tip of the first conductive tube 112 by the rotation of the first rotary shielding member 140, as shown in FIG. It is possible to increase the size linearly as it goes to the end of the first conductive tube 112. Therefore, the width of the first passage region 121a of the fixed shielding member 120 (see “W” in FIG. 3) even if the spray amount of each vapor deposition nozzle 111 gradually decreases toward the rear end of the first conductive tube 112. , The rotation of the first rotary shielding member 140 can be linearly decreased toward the tip of the first conduction tube 112 and can be increased linearly as the end of the first conduction tube 112 is reached. The deviation of the deposition thickness on the substrate 10 that can occur in the longitudinal direction of one conductive tube can be further minimized.

  Further, the vapor deposition apparatus 100 according to the first embodiment of the present invention described above is provided on the stationary shielding member 120 so as to be rotatable via the second hinge shaft 151 as shown in FIGS. A second rotary shield that adjusts the width W of the two passage region 121b to be linearly smaller as it goes to the tip of the first conduction tube 112 and to be linearly larger as it goes to the end of the first conduction tube 112. A member 150 may further be included. Therefore, the deviation of the deposition thickness on the substrate 10 can be minimized even for the first thin film forming substance A passing through the second passage region 121b of the fixed shielding member 120.

  In addition, the deposition apparatus according to the first embodiment of the present invention may further include a substrate transfer unit 190 that transfers the substrate 10 in the second direction, as shown in FIG. Here, the second direction may be perpendicular to the first direction described above.

  Hereinafter, a vapor deposition apparatus according to a modification of the first embodiment of the present invention will be described with reference to FIG.

  FIG. 4 is a view of a vapor deposition apparatus according to a modification of the first embodiment of the present invention as seen from the first conductive tube.

  As shown in FIG. 4, the deposition apparatus according to the modification of the first embodiment of the present invention further includes first and second driving units 161 and 162, a tip side deposition rate sensor 170, and a terminal side deposition rate sensor 180. Since it is the same as that of the first embodiment of the present invention described above, the first and second driving units 161 and 162, the tip side deposition rate sensor 170, and the end side deposition rate sensor 180 are mainly described below. explain.

  Each of the first and second driving units 161 and 162 is a component that applies a rotational force to the first and second rotary shielding members 140 and 150, respectively. For example, the first and second driving units 161 and 162 may be motors.

  The tip side deposition rate sensor 170 is a component that measures the deposition rate provided in the first part corresponding to the tip of the first conductive tube 112 in the shielding region part 122 of the fixed shielding member 120. The rate sensor 180 is a component that measures the deposition rate provided in the second portion of the shielding region 122 of the fixed shielding member 120 corresponding to the terminal portion of the first conductive tube 112.

  Therefore, if the tip-side deposition rate measured by the tip-side deposition rate sensor 170 is larger than the end-side deposition rate measured by the end-side deposition rate sensor 180, the first and second driving units 161 and 162 are each The width W of each of the first and second passage regions 121a and 121b decreases linearly as it goes to the tip of the first conduction tube 112, and increases linearly as it goes to the end of the first conduction tube 112. Since the first and second rotary shielding members 140 and 150 can be rotated, the deviation of the deposition thickness on the substrate 10 can be further minimized.

  Hereinafter, a vapor deposition apparatus 200 according to a second embodiment of the present invention will be described with reference to FIG.

  FIG. 5 is a schematic view illustrating a vapor deposition apparatus according to a second embodiment of the present invention.

  The deposition apparatus 200 according to the second embodiment of the present invention is a modification of the above-described first embodiment of the present invention except that the deposition apparatus 200 further includes a second conductive tube 222 and a third conductive tube 232 as shown in FIG. Since this is the same as the example, the second conductive tube 222 and the third conductive tube 232 will be mainly described below.

  The second conductive tube 222 is disposed on the left side (left side with reference to FIG. 5) of the first conductive tube 112 to guide the second thin film forming material B-1, and the third conductive tube 232 is the first conductive tube 112. The third thin film forming material B-2, which is arranged on the right side (right side with reference to FIG. 5) and is the same material as the second thin film forming material B-1, is guided. In particular, the required deposition rate generation temperature of the second and third thin film forming materials B-1 and B-2, which are the same material, is higher than the required deposition rate generation temperature of the first thin film forming material A, which is a different material. May be. Further, the second conductive tube 222, the first conductive tube 112, and the third conductive tube 232 may be arranged on a straight line L parallel to the substrate 10 to form a linear arrangement. The second and third conductive tubes 222 and 232 may be included in the second and third linear evaporation sources 220 and 230, respectively, different from each other (see FIG. 1).

  Therefore, the required deposition rate generation temperature of the second and third thin film forming materials B-1 and B-2, which are the same material, is different from the required deposition rate generation temperature of the first thin film forming material A, which is a different material. At most, the second and third thin film forming materials B-1 and B-2, which are the same materials, are provided from the second and third conductive tubes 222 and 232 which are two conductive tubes. The deposition rate of the first thin film forming material A can be sufficiently reduced at the required generation rate of the first thin film forming material A, and a desired deposition rate can be sufficiently achieved. , 220, 230 can be ensured. For example, when the temperatures of the crucibles 113 of the first, second, and third linear evaporation sources 110, 220, and 230 are the same, even if the material for forming a thin film has a relatively high required deposition rate generation temperature, Since the second and third thin film forming materials B-1 and B-2, which are the same materials, are provided from the second and third linear evaporation sources 220 and 230, the deposition rate of these materials is relatively reduced. In addition, a desired deposition rate can be sufficiently obtained at a relatively low required deposition rate generation temperature of the first thin film forming material A, and the thermal safety of each linear evaporation source 110, 220, 230 can be prevented. Sex can be secured.

  Furthermore, the deposition apparatus 200 according to the second embodiment of the present invention may further include a second contamination prevention member 240 and a third contamination prevention member 250 as shown in FIG. The second contamination prevention member 240 may be provided on the fixed shielding member 120 so as to correspond to the second conductive tube 222 based on a vertical distance with respect to the substrate 10, and the third contamination prevention member 250 may be provided on the stationary shielding member 120. The third conductive tube 232 may be provided on the basis of a vertical distance with respect to the substrate 10. Therefore, the contaminant attached to the vapor deposition nozzle of the second conductive tube 222 is blocked by the second contamination prevention member 240, thereby preventing the contaminant from moving to the substrate 10, and the third conductive tube 232. Contaminants attached to the deposition nozzle are shielded by the third anti-contamination member 250, so that the contaminants can be prevented from moving to the substrate 10.

  Hereinafter, a vapor deposition apparatus 300 according to a third embodiment of the present invention will be described with reference to FIGS.

  FIG. 6 is a diagram schematically illustrating a deposition apparatus according to a third embodiment of the present invention, FIG. 7 is a graph illustrating a change in deposition rate according to substrate transfer coordinates in the deposition apparatus of FIG. 5, and FIG. FIG. 9 is a graph showing a change in the deposition rate according to the transfer coordinate of the substrate in the vapor deposition apparatus, and FIG. 9 is a comparison between the vapor deposition apparatus in FIG. 5 (linear arrangement) and the vapor deposition apparatus in FIG. 6 (arc arrangement). It is the graph which showed the change of the deposition rate ratio by the transfer coordinate.

  FIG. 10A is a diagram schematically showing a deposition rate measuring unit provided in each conduction tube, and FIG. 10B is a front end side deposition rate measuring unit provided at each of the front end and the rear end of the conduction tube. It is the figure which showed the rear end side vapor deposition rate measurement part.

  The vapor deposition apparatus 300 according to the third embodiment of the present invention, as shown in FIG. 6, except for the arrangement of the first, second and third conductive tubes 112, 222 and 232, the second embodiment of the present invention described above. Since this is the same as the example, the arrangement of the first, second, and third conductive tubes 112, 222, and 232 will be mainly described below.

  The second and third conductive tubes 222 and 232 may be disposed parallel to the first conductive tube 112, and the second conductive tube 222, the first conductive tube 112, and the third conductive tube 232 are arcs in this order ( It can be arranged to draw 310) of FIG. Therefore, the deposition rate (deposition thickness) on the substrate 10 is inversely proportional to the square of the distance from the deposition nozzle, and thus the second conduction tube 222 and the third conduction tube 232 are located at the center of the first conduction. By tilting in a circular arc shape with reference to the tube 112, the deposition rate of the second and third thin film forming materials B-1 and B-2, which are the same materials, and the first thin film forming material A, which is different from these deposition rates, are used. The deviation of the deposition rate ratio can be minimized.

  As a result of confirmation by experiment, when the second conductive tube 222, the first conductive tube 112, and the third conductive tube 232 are arranged in a straight line as in the second embodiment of the present invention described above, as shown in FIG. Further, it was found that the deposition rates of the first, second, and third thin film forming substances A, B-1, and B-2 are distributed differently depending on the transfer coordinates of the substrate 10.

  On the other hand, as a result of confirmation by experiment, when the second conductive tube 222, the first conductive tube 112, and the third conductive tube 232 are arranged in an arc shape as in the third embodiment of the present invention described above, FIG. As shown in FIG. 8, it was found that the deposition rates of the first, second, and third thin film forming substances A, B-1, and B-2 are uniformly distributed according to the transfer coordinates of the substrate 10. In particular, as shown in FIG. 9, as a result of confirmation by experiment, it is understood that the ratio of the deposition rate varies depending on the position on the substrate 10 in the case of the linear arrangement as in the second embodiment of the present invention described above. When the electrodes are arranged in an arc shape as in the third embodiment of the present invention, the deposition rates of the second and third thin film forming materials B-1 and B-2, which are the same materials, are different from those. It was found that the ratio of the deposition rate of the first thin film-forming substance A was substantially the same value (2.0) at all positions on the substrate. This is because the second and third thin film-forming substances B-1, at the same composition ratio at all positions on the substrate 10, when arranged in an arc shape as in the third embodiment of the present invention described above, It shows that the sum of B-2 and the first thin film forming substance A can obtain a compound close to 2: 1.

  Further, for example, the center AC of the arc 310 described above can be located at the first portion of the substrate 10 as shown in FIG. 6, and the first portion is a portion corresponding to the center of the passage region portion 121. May be.

  Further, the vapor deposition apparatus 300 according to the third embodiment of the present invention described above is provided in each of the first, second, and third conductive tubes 112, 222, and 232 as shown in FIG. One or more deposition rate measuring units 320 for measuring the respective deposition rates may be further included. Therefore, the deposition rate can be measured independently for each of the conductive tubes 112, 222, and 232, and the deposition rate can be managed more accurately.

  For example, each of the deposition rate measuring units 320 can include a measurement nozzle 321, a measurement conducting tube 322, and a conducting tube side deposition rate sensor 323, as shown in FIG. The measurement nozzle 321 may be provided to communicate with each of the first, second, and third conductive tubes 112, 222, and 232, and the measurement conductive tube 322 may be provided as the first, second, and third conductive tubes 112. , 222, and 232 have one end, can guide the thin film forming material sprayed from the measurement nozzle 321, and the conductive tube side deposition rate sensor 323 is provided at the other end of the measurement conductive tube 322. The deposition rate of the thin film forming material to be sprayed can be measured. In particular, the measurement conductive tube 322 further includes a cooling jacket (not shown) for cooling the inner wall of the measurement conductive tube 322 in order to minimize the influence of a substance released from the inner wall of the measurement conductive tube 322. Can do. One end of the measurement conducting tube 322 is fastened to each of the first, second, and third conducting tubes 112, 222, and 232 via a fastening means (not shown) such as a flange. The other end can also be fastened to the module of the conductive tube side deposition rate sensor 323 via fastening means (not shown) such as a flange.

  In addition, the one or more deposition rate measuring units 320 take into consideration that the deposition rates of the front end portion and the end portion of the conductive tube are different, as shown in FIG. A front end side deposition rate measuring unit 320 that measures the deposition rate provided at each front end of each of the three conductive tubes 112, 222, and 232, and each end of the first, second, and third conductive tubes 112, 222, and 232; And a terminal-side deposition rate measuring unit 320 that measures the deposition rate of each of the components.

  The preferred embodiment of the present invention has been described in detail above, but the scope of the present invention is not limited to this, and those skilled in the art using the basic concept of the present invention defined in the following claims. Many variations and modifications of the invention belong to the scope of the present invention.

(Appendix)
(Appendix 1)
A deposition apparatus for depositing one or more thin film forming substances on a substrate,
A first linear evaporation source having a first conductive tube in which a plurality of vapor deposition nozzles for injecting a first thin film forming material onto the substrate is arranged in a first direction;
A shielding area provided between the first conductive tube and the substrate and blocking a portion of the sprayed first thin film forming material to pass through the substrate and a remaining portion of the first thin film forming material. A fixed shielding member including an area portion;
A first contamination prevention member provided in the fixed shielding member and preventing contaminants attached to at least one vapor deposition nozzle of the plurality of vapor deposition nozzles from moving to the substrate;
Including a vapor deposition apparatus.

(Appendix 2)
The vapor deposition apparatus according to appendix 1, wherein the first contamination prevention member is provided so as to cross the passage region portion and divides the passage region portion into a first passage region and a second passage region.

(Appendix 3)
The first anti-contamination member is long provided across the passage region portion in the first direction,
The vapor deposition apparatus according to appendix 2, wherein the plurality of vapor deposition nozzles are arranged to correspond to the first contamination prevention member.

(Appendix 4)
The deposition apparatus according to claim 2, further comprising a first rotary shielding member that is rotatably provided to the fixed shielding member via a first hinge shaft and adjusts a width of the first passage region. Landing gear.

(Appendix 5)
The vapor deposition apparatus according to appendix 4, wherein the first hinge shaft is provided at a position perpendicular to a center of a side surface of the first contamination prevention member in the shielding region portion of the fixed shielding member.

(Appendix 6)
The width of the first passage region decreases linearly as it goes to the distal end of the first conductive tube due to the rotation of the first rotary shielding member, and linearly increases as it goes to the end of the first conductive tube. The vapor deposition apparatus according to appendix 5, which becomes larger.

(Appendix 7)
The vapor deposition apparatus is provided on the fixed shielding member so as to be rotatable via a second hinge shaft, and the width of the second passage region decreases linearly and gradually toward the tip of the first conduction tube. The vapor deposition apparatus according to appendix 6, further comprising a second rotary shielding member that is adjusted so as to increase linearly and gradually toward the end of the first conductive tube.

(Appendix 8)
The vapor deposition apparatus includes:
First and second driving units for applying rotational force to the first and second rotary shielding members, respectively;
A tip-side deposition rate sensor that is provided in a first portion corresponding to the tip of the first conduction tube in the shielding region of the fixed shielding member and measures a deposition rate;
A terminal-side deposition rate sensor that is provided in a second portion corresponding to a terminal portion of the first conductive tube in the shielding region of the fixed shielding member and measures a deposition rate;
The vapor deposition apparatus according to appendix 7, further comprising:

(Appendix 9)
If the front end side deposition rate measured by the front end side deposition rate sensor is larger than the end side deposition rate measured by the rear end side deposition rate sensor, each of the first and second driving units includes the first and second driving units. The first and second widths are such that each width of the second passage region decreases linearly as it goes to the tip of the first conduction tube, and increases linearly as it goes to the end of the first conduction tube. The vapor deposition apparatus according to appendix 8, wherein the rotary shielding members are respectively rotated.

(Appendix 10)
The vapor deposition apparatus includes:
A second conductive tube disposed on the left side of the first conductive tube and guiding a second thin film forming material;
A third conductive tube disposed on the right side of the first conductive tube and guiding a third thin film forming material that is the same material as the second thin film forming material;
The deposition apparatus according to appendix 1, wherein the second and third thin film forming materials are materials having a required deposition rate generation temperature for generating a required deposition rate higher than that of the first thin film forming material.

(Appendix 11)
The vapor deposition apparatus includes:
A second contamination preventing member provided on the fixed shielding member so as to correspond to the second conductive tube;
A third anti-contamination member provided on the fixed shielding member so as to correspond to the third conduction tube;
The vapor deposition apparatus according to appendix 10, further comprising:

(Appendix 12)
The vapor deposition apparatus according to appendix 10, wherein each of the second and third conductive tubes is included in a second and third linear evaporation source different from each other.

(Appendix 13)
The second and third conductive tubes are disposed in parallel to the first conductive tube;
The vapor deposition apparatus according to appendix 10, wherein the second conductive tube, the first conductive tube, and the third conductive tube are arranged to draw an arc in this order.

(Appendix 14)
The center of the arc is located in the first portion of the substrate;
The vapor deposition apparatus according to appendix 13, wherein the first portion is a portion corresponding to the center of the passage region portion.

(Appendix 15)
The vapor deposition apparatus includes:
The vapor deposition apparatus according to appendix 10, further comprising one or more vapor deposition rate measuring units that are provided in each of the first, second, and third conductive tubes and measure the respective vapor deposition rates.

(Appendix 16)
The deposition rate measuring unit is
A measurement nozzle provided to communicate with each of the first, second, and third conduction tubes, and one end provided to each of the first, second, and third conduction tubes, and jetted from the measurement nozzle A conducting tube for guiding a thin film forming material to be formed;
A conductive tube side deposition rate sensor that is provided at the other end of the measurement conductive tube and measures the deposition rate of the sprayed thin film forming material;
The vapor deposition apparatus of Claim 15 containing these.

(Appendix 17)
The one or more deposition rate measurement units include:
A front-end-side deposition rate measuring unit that is provided at each tip of the first, second, and third conduction tubes and that measures each deposition rate;
An end-side deposition rate measuring unit that is provided at each end of the first, second, and third conduction tubes and measures the deposition rate;
The vapor deposition apparatus of Claim 15 containing these.

(Appendix 18)
The vapor deposition apparatus further includes a substrate transfer unit that transfers the substrate in a second direction,
The vapor deposition apparatus according to appendix 1, wherein the first and second directions are perpendicular to each other.

  Since the present invention relates to a vapor deposition apparatus using a linear evaporation source, the present invention can be applied to manufacture a semiconductor or the like and has industrial applicability.

Claims (18)

A deposition apparatus for depositing one or more thin film forming substances on a substrate,
A first linear evaporation source having a first conductive tube in which a plurality of vapor deposition nozzles for injecting a first thin film forming material onto the substrate is arranged in a first direction;
A shielding area provided between the first conductive tube and the substrate and blocking a portion of the sprayed first thin film forming material to pass through the substrate and a remaining portion of the first thin film forming material. A fixed shielding member including an area portion;
A first contamination prevention member provided in the fixed shielding member and preventing contaminants attached to at least one vapor deposition nozzle of the plurality of vapor deposition nozzles from moving to the substrate;
Including a vapor deposition apparatus.   2. The vapor deposition apparatus according to claim 1, wherein the first contamination prevention member is provided so as to cross the passage region portion and divides the passage region portion into a first passage region and a second passage region. The first anti-contamination member is long provided across the passage region portion in the first direction,
The vapor deposition apparatus according to claim 2, wherein the plurality of vapor deposition nozzles are arranged to correspond to the first contamination prevention member.   3. The vapor deposition apparatus according to claim 2, further comprising a first rotation type shielding member that is rotatably provided to the fixed type shielding member via a first hinge shaft and adjusts a width of the first passage region. Landing gear.   5. The vapor deposition apparatus according to claim 4, wherein the first hinge shaft is provided at a position perpendicular to a center of a side surface of the first contamination prevention member in the shielding region portion of the fixed shielding member.   The width of the first passage region decreases linearly as it goes to the tip of the first conduction tube due to the rotation of the first rotary shielding member, and gradually increases as it goes to the end of the first conduction tube. The vapor deposition apparatus of Claim 5 which becomes large.   The vapor deposition apparatus is provided on the fixed shielding member so as to be rotatable through a second hinge shaft, and the width of the second passage region decreases linearly and gradually toward the tip of the first conduction tube. The vapor deposition apparatus according to claim 6, further comprising a second rotary shielding member that is adjusted so as to increase linearly toward the end of the first conductive tube. The vapor deposition apparatus includes:
First and second driving units for applying rotational force to the first and second rotary shielding members, respectively;
A tip-side deposition rate sensor that is provided in a first portion corresponding to the tip of the first conduction tube in the shielding region of the fixed shielding member and measures a deposition rate;
A terminal-side deposition rate sensor that is provided in a second portion corresponding to a terminal portion of the first conductive tube in the shielding region of the fixed shielding member and measures a deposition rate;
The vapor deposition apparatus according to claim 7, further comprising:   If the front end side deposition rate measured by the front end side deposition rate sensor is larger than the end side deposition rate measured by the rear end side deposition rate sensor, each of the first and second driving units includes the first and second driving units. The first and second widths are such that each width of the second passage region decreases linearly as it goes to the tip of the first conduction tube, and increases linearly as it goes to the end of the first conduction tube. The vapor deposition apparatus according to claim 8, wherein each of the rotary shielding members is rotated. The vapor deposition apparatus includes:
A second conductive tube disposed on the left side of the first conductive tube and guiding a second thin film forming material;
A third conductive tube disposed on the right side of the first conductive tube and guiding a third thin film forming material that is the same material as the second thin film forming material;
The deposition apparatus according to claim 1, wherein the second and third thin film forming materials are materials having a required deposition rate generation temperature for generating a required deposition rate higher than that of the first thin film forming material. The vapor deposition apparatus includes:
A second contamination preventing member provided on the fixed shielding member so as to correspond to the second conductive tube;
A third anti-contamination member provided on the fixed shielding member so as to correspond to the third conduction tube;
The vapor deposition apparatus according to claim 10, further comprising:   11. The vapor deposition apparatus according to claim 10, wherein each of the second and third conductive tubes is included in different second and third linear evaporation sources. The second and third conductive tubes are disposed in parallel to the first conductive tube;
The vapor deposition apparatus according to claim 10, wherein the second conductive tube, the first conductive tube, and the third conductive tube are arranged to draw an arc in this order. The center of the arc is located in the first portion of the substrate;
The said 1st part is a vapor deposition apparatus of Claim 13 which is a part corresponding to the center of the said passage area | region part. The vapor deposition apparatus includes:
The vapor deposition apparatus according to claim 10, further comprising one or more vapor deposition rate measuring units that are provided in each of the first, second, and third conductive tubes and that measure the respective vapor deposition rates. The deposition rate measuring unit is
A measurement nozzle provided to communicate with each of the first, second, and third conduction tubes, and one end provided to each of the first, second, and third conduction tubes, and jetted from the measurement nozzle A conducting tube for guiding a thin film forming material to be formed;
A conductive tube side deposition rate sensor that is provided at the other end of the measurement conductive tube and measures the deposition rate of the sprayed thin film forming material;
The vapor deposition apparatus of Claim 15 containing. The one or more deposition rate measurement units include:
A front-end-side deposition rate measuring unit that is provided at each tip of the first, second, and third conduction tubes and that measures each deposition rate;
An end-side deposition rate measuring unit that is provided at each end of the first, second, and third conduction tubes and measures the deposition rate;
The vapor deposition apparatus of Claim 15 containing. The vapor deposition apparatus further includes a substrate transfer unit that transfers the substrate in a second direction,
The deposition apparatus according to claim 1, wherein the first and second directions are perpendicular to each other.

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