JP2019510360A - Substrate carrier and method for processing a substrate - Google Patents

Abstract

A substrate carrier (100) for holding a substrate (10) during deposition is described. The substrate carrier includes an electrostatic chuck (120) configured to attract the substrate toward the support surface (102) of the substrate carrier (100) and a mask (20) toward the support surface (102) of the substrate carrier. And / or a magnetic chuck (130) configured to attract the mask frame (25), the electrostatic chuck (120) and the magnetic chuck (130) being integrated into the carrier body (101) of the substrate carrier. . [Selection] Figure 1

Description

  [0001] Embodiments of the present invention relate to a substrate carrier for holding a substrate, and more particularly to a substrate carrier having an electrostatic chuck for attracting a substrate to a support surface. Further embodiments relate to a method of processing a substrate, and more particularly to a method of depositing material on a substrate while the substrate is held by a substrate carrier, particularly in an essentially vertical orientation.

  [0002] Optoelectronic devices that utilize organic materials are becoming increasingly popular for a number of reasons. Since many of the materials used to make such devices are relatively inexpensive, organic optoelectronic devices have the potential for cost advantages over inorganic devices. Intrinsic properties of organic materials, such as flexibility, can be advantageous in applications such as deposition on flexible or non-flexible substrates. Examples of organic optoelectronic devices include organic light emitting devices (OLEDs), organic phototransistors, organic photovoltaic cells, and organic photodetectors.

  [0003] For OLEDs, organic materials may have performance advantages over conventional materials. For example, the wavelength at which the organic light emitting layer emits light can be easily tuned using a suitable dopant. OLEDs utilize a thin organic film that emits light when a voltage is applied across the device. OLEDs are becoming an increasingly interesting technology for use in applications such as flat panel displays, lighting, and backlighting.

  [0004] A substrate and a mask that defines a pattern to be provided on the substrate are often held on a corresponding support by mechanical force. Conventional mechanical contacts used to hold the substrate and mask during processing can cause damage to the substrate due to the applied mechanical force. A mechanical force may be applied to hold the mask in place during processing. Conventional mechanical carriers may hold the substrate at its end, and the physical contact is heavily concentrated at the end of the substrate to ensure a sufficient clamping force. This mechanical contact concentrated on the edge of the substrate can cause contamination or physical damage of the contact and can degrade the substrate.

  [0005] Newer processing systems incorporate alternative mechanisms for chucking a substrate to a substrate carrier that avoid the above-mentioned drawbacks. For example, the substrate is held at a predetermined position by an electrostatic chuck using electrostatic force. The contact force between the system components and the substrate can be reduced.

  [0006] However, additional mechanisms are typically required to hold the mask in front of the substrate during deposition, which increases handling complexity and can cause problems with mask and / or substrate positioning. . For example, it can be extremely difficult to accurately position a mask in front of a substrate at a distance close to the substrate without damaging the substrate.

  [0007] Accordingly, there is a need for a method and apparatus for reliably and accurately positioning a mask and substrate within a processing system while reducing handling complexity.

  [0008] In view of the above, a substrate carrier, a deposition apparatus, and a method of processing a substrate are provided.

  [0009] According to aspects of the present disclosure, a substrate carrier is provided for holding a substrate during deposition. The substrate carrier includes an electrostatic chuck configured to attract the substrate toward the support surface of the substrate carrier, and a magnetic chuck configured to attract the mask and / or mask frame toward the support surface of the substrate carrier. The electrostatic chuck and the magnetic chuck are integrated with the carrier body of the substrate carrier.

  [0010] According to a further aspect of the present disclosure, a deposition apparatus for depositing material on a substrate is provided. The deposition apparatus includes a substrate carrier and a deposition source configured to deposit material on a substrate held by the substrate carrier. The substrate carrier includes an electrostatic chuck configured to attract the substrate toward the support surface of the substrate carrier and a magnetic chuck configured to attract the mask and / or mask frame toward the support surface of the substrate carrier. In addition, the electrostatic chuck and the magnetic chuck are integrated into the carrier body of the substrate carrier.

  [0011] According to a further aspect of the present disclosure, a method of processing a substrate is provided. In this method, the electrostatic chuck integrated with the carrier body of the substrate carrier attracts the substrate toward the support surface of the substrate carrier, places a mask in front of the substrate, and integrates with the carrier body of the substrate carrier. Attracting the mask and / or the mask frame holding the mask toward the support surface by the structured magnetic chuck.

  [0012] Further aspects, advantages, and features of the disclosure will be apparent from the description and the accompanying drawings.

[0013] In order to provide a thorough understanding of the above features of the present disclosure, a more specific description of the present disclosure, briefly outlined above, is provided by reference to embodiments. The accompanying drawings are described below with reference to embodiments of the disclosure. Exemplary embodiments are shown in the drawings and are described in detail below.
[0014] FIG. 6 is a schematic illustration of a substrate carrier according to some embodiments described herein. [0015] FIG. 5 is a schematic illustration of a substrate carrier according to some embodiments described herein. [0016] FIG. 6 is a schematic illustration of a substrate carrier according to some embodiments described herein. [0017] FIG. 1 is a schematic illustration of a deposition apparatus according to some embodiments described herein. [0018] FIG. 5 is a flow diagram illustrating a method of processing a substrate, according to embodiments described herein.

  [0019] Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the drawings. Each example is provided by way of explanation only and is not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used in any other embodiment or in conjunction with any other embodiment to produce yet another embodiment. Is possible. The present disclosure is intended to include such modifications and variations.

  [0020] In the following description of the drawings, the same reference numbers refer to the same or similar elements. Generally, only the differences with respect to the individual embodiments are described. Unless otherwise specified, the description of a part or aspect of one embodiment applies equally to the corresponding part or aspect of another embodiment.

  [0021] FIG. 1 is a schematic cross-sectional view of a substrate carrier 100 configured to hold a substrate 10 while depositing material on the substrate. The substrate carrier 100 can be used to transport the substrate 10 through a vacuum processing system, described in more detail below, and is therefore also referred to herein as a “substrate support” or “substrate holder”. In FIG. 1, the substrate 10 is shown schematically as a rectangle that is held on a support surface 102 of a substrate carrier 100.

  [0022] In some embodiments that can be combined with other embodiments described herein, the substrate 10 is at least temporarily held in a substantially vertical orientation at the support surface 102 during processing. be able to. For example, the substrate is held in a substantially vertical orientation while being transported through a vacuum processing system and / or during a deposition process in which material is deposited on the substrate.

  [0023] As described herein, "substantially perpendicular" refers to an angle that is perpendicular to the main surface of the substrate (gravity vector) from 0 ° to +/− 20 °, particularly from 0 ° to +/−. It can be understood that the orientation of the substrate forms an angle of 10 ° or less. The orientation of such a substrate is not (strictly) vertical during deposition, but may be slightly tilted by a tilt angle of, for example, 0 ° to −5 ° with respect to the vertical axis. The negative angle refers to an orientation in which the substrate is directed slightly downward. This deviation from the vertical direction results in a more stable substrate deposition if the substrate orientation has some deviation from the vertical orientation, or the downward substrate orientation reduces particles on the substrate during the deposition. May be beneficial. However, (precisely) vertical orientation is also possible.

  [0024] Accordingly, the support surface 102 of the substrate carrier 100 may also be oriented at least temporarily essentially vertically during substrate processing. It is difficult to keep a large area substrate in an essentially vertical orientation. This is because the substrate may be bent due to the weight of the substrate, the substrate may slide off the support surface if the grip force is not sufficient, and / or the substrate moves relative to a mask that can be held in front of the substrate. Because there is.

  [0025] In some embodiments, the substrate may be held in an essentially horizontal orientation at least temporarily during processing, eg, in a downward facing position. For example, the substrate can be held facing downward on an essentially horizontal support surface. The downward substrate position can be beneficial to keep particle uptake on the substrate surface to a minimum.

  [0026] In some embodiments, the substrate carrier 100 is movable (eg, pivotable) between a vertical orientation and a non-vertical orientation (eg, a horizontal orientation). For example, the substrate can be placed and chucked on the support surface 102 in a non-vertical orientation, and the substrate carrier 100 having such a chucked substrate can be essentially vertical using, for example, a swing-up module. And can be transported and / or further processed in an essentially vertical orientation. In some embodiments, the substrate can be released and removed from the support surface in a non-vertical orientation (eg, horizontal orientation).

  [0027] In some cases, during processing (eg, for loading and unloading a substrate into a vacuum deposition system), the transfer of a substrate from one substrate carrier (eg, in the system or under reduced pressure) to another substrate carrier may occur. Arise.

  [0028] The substrate 10 may be supported on a substrate carrier 100 during transport and / or processing, for example during layer deposition, transport of a substrate through a vacuum processing system or loading and unloading into a vacuum chamber. . One or more thin layers may be deposited on the substrate while the substrate is held on the substrate carrier. A stack of layers (eg comprising at least one organic material) can be deposited on the substrate, for example by evaporation.

  [0029] According to embodiments of the present disclosure, an inline or batch processing system having one or more transport devices is used to transport one or more substrate carriers with each substrate along a transport path. be able to. In some implementations, the transfer device can be provided as a magnetic levitation system for holding the substrate carrier in a suspended state. Optionally, the in-line processing system can use a magnetic drive system configured to move or transport the substrate carrier in the transport direction along the transport path. The magnetic drive system can be included in the magnetic levitation system or can be provided as a separate entity.

  [0030] In some implementations, a mechanical transfer system is provided. Such a transport system can include a roller for transporting the substrate carrier in the transport direction, and can include a drive unit for rotating the roller. The mechanical transport system is easy to implement, sturdy, durable and easy to maintain.

  [0031] In some embodiments, the substrate 10 is held on the support surface 102 of the substrate carrier 100 while depositing the coating material on the substrate. For example, a chemical vapor deposition (CVD) system, a physical vapor deposition (PVD) system (eg, a sputtering system), and / or an evaporation system may be used in a vacuum processing chamber, eg, for display applications, such as a substrate ( It was developed to coat glass substrates). In a typical vacuum processing system, each substrate can be held by a substrate carrier, and the substrate carrier can be transported through a vacuum processing chamber by a corresponding transport device. The substrate carrier can be moved by the transport device such that at least a portion of the main surface of the substrate is exposed towards the coating apparatus (eg, sputtering apparatus or evaporation apparatus). The main surface of the substrate can be coated with a thin coating layer, and the substrate can be positioned in front of a coating apparatus that can pass through the substrate at a predetermined speed. Alternatively, the substrate may be transported through the coating apparatus at a predetermined speed.

  [0032] The substrate 10 may be a non-flexible substrate such as a wafer, a slice of transparent crystal such as sapphire, a glass substrate, or a ceramic plate. However, the present disclosure is not so limited, and the term “substrate” may also include flexible substrates such as webs or foils (eg, metal foils or plastic foils).

[0033] In some embodiments, the substrate may be a large area substrate. The large area substrate can have a surface area of 0.5 m ² or more. In particular, large area substrates can be used for display manufacturing and can be glass substrates or plastic substrates. For example, the substrates described herein may include substrates commonly used for LCD (Liquid Crystal Display), PDP (Plasma Display Panel) and the like. For example, a large area substrate may have a main surface with a region of 1 m ² or more. In some embodiments, the large area substrate is a GEN4.5, approximately 1.4 m ² substrate (1.1 × 1.3 m) corresponding to an approximately 0.67 m ² substrate (0.73 × 0.92 m). GEN5 corresponding to), or more. Furthermore, the large area substrate is GEN7.5 corresponding to a substrate of about 4.29 m ² (1.95 m × 2.2 m), and GEN8 corresponding to a substrate of about 5.7 m ² (2.2 m × 2.5 m). Or GEN10 corresponding to a substrate of about 8.7 m ² (2.85 m × 3.05 m). Larger generations such as GEN11 and GEN12 and corresponding substrate areas can be similarly mounted. In some implementations, an array of smaller sized substrates having a surface area up to several cm ² (eg, 2 cm × 4 cm) and / or various individual shapes is positioned on a single substrate carrier. obtain.

  [0034] In some implementations, the thickness of the substrate perpendicular to the major surface of the substrate is 1 mm or less (eg, 0.1 mm to 1 mm), particularly 0.3 mm to 0.8 mm (eg,. 7 mm). A thinner substrate is also possible. Handling a thin substrate with a thickness of 0.5 mm or less may be difficult.

  [0035] Holding the substrate on the support surface 102 of the substrate carrier 100 so as to avoid movement of the substrate and / or mask during deposition may be beneficial in terms of obtaining an excellent coating. As the size of the substrate increases and the coating structure shrinks, it becomes increasingly difficult to accurately position the substrate relative to the mask on the support surface and accurately position the mask relative to the substrate. Yes.

  [0036] According to embodiments described herein, the substrate carrier 100 includes an electrostatic chuck 120 configured to attract the substrate toward the support surface 102 of the substrate carrier 100, and support of the substrate carrier 100. And a magnetic chuck 130 configured to attract the mask 20 and / or the mask frame 25 toward the surface 102. The electrostatic chuck 120 and the magnetic chuck 130 are integrated with the carrier body 101 of the substrate carrier 100.

  [0037] An electrostatic chuck 120 (also referred to herein as an “e-chuck”) can be used to attract the substrate 10 to the support surface 102 of the substrate carrier 100 during substrate processing. For example, the substrate can include a material (eg, a dielectric material) that can be pulled toward the support surface by electrostatic forces so that the substrate can be pulled into direct contact with the support surface 102. It is also possible to hold the substrate during high temperature processing, coating processing, and plasma processing in a vacuum environment.

  [0038] The magnetic chuck 130 may be used to attract the mask 20 toward the substrate 10 supported on the support surface 102. In particular, the close distance between the substrate 10 and the mask 20 during deposition can be beneficial to reduce or avoid the shadowing effect of the mask. For example, the mask 20 can be attracted toward the support surface 102 using a magnetic chuck 130 during deposition such that at least a portion of the mask 20 is in direct contact with the substrate 10. The shadowing effect can be reduced. After deposition, the magnetic chuck 130 can release the mask 20 from the substrate 10 so that the mask and substrate can be separated from each other without adversely affecting the material pattern deposited on the substrate.

  [0039] In some embodiments, the mask 20 includes a magnetically attractable material (eg, metal) so that it can be attracted by the magnetic force generated by the magnetic chuck 130. For example, the mask 20 is a metal mask, specifically a fine metal mask. The mask 20 may be fixed to the mask frame 25 (for example, permanently fixed to the mask frame 25) by welding. For example, the mask frame 25 may be formed as a frame that surrounds the mask and holds the mask at the periphery of the mask. In some embodiments, the mask frame 25 can also include a magnetically attractable material (eg, metal) so that the mask frame can also be attracted toward the support surface via the magnetic chuck 130.

  [0040] The magnetic chuck 130 and the electrostatic chuck 120 are integrated into a common carrier body of the substrate carrier 100. For example, the electrostatic chuck 120 can be incorporated in the first internal space of the carrier body 101, and the magnetic chuck 130 can be incorporated in the second internal space of the carrier body 101. Alternatively or additionally, the electrostatic chuck 120 and the magnetic chuck 130 can be relative to the same carrier, eg, the electrostatic chuck 120 so that the electrostatic chuck 120 and the magnetic chuck 130 can be transported and moved as a single unit. And magnetic chuck 130 are both securely connected by pulling or securing them to the same carrier body.

  [0041] In some embodiments, which can be combined with, for example, other embodiments described herein, the carrier body 101 is an integral body in which both the electrostatic chuck 120 and the magnetic chuck 130 are disposed. Can be formed as a formula plate.

  [0042] In some embodiments that can be combined with other embodiments disclosed herein, the carrier body 101 includes a first dielectric and one or more electrodes of the electrostatic chuck 120 are first. 1 in a dielectric. The first dielectric can be made from a dielectric material, which can be, for example, pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina, or equivalent materials (eg, polyimide-based materials or other organic materials). It is a dielectric material having a high thermal conductivity such as a heat-resistant polymer material. Each electrode of the electrostatic chuck can be connected to a power source (eg, a voltage source). The power supply can apply a predetermined voltage to the electrodes to generate a predetermined electrostatic grip force.

  [0043] In some embodiments, one or more magnets of the magnetic chuck 130 can also be incorporated into the first dielectric or a second dielectric that can be attracted to the first dielectric.

  [0044] According to embodiments described herein, the magnetic chuck 130 including one or more magnets and the electrostatic chuck 120 including one or more electrodes can be configured as a single unit. . Thus, there is no need to separately move a magnetic unit, such as a magnet plate, to the back side of the e-chuck to attract the mask toward the substrate. Instead, according to the present invention, the substrate carrier can be moved to a predetermined position as a single unit including both the electrostatic chuck 120 and the magnetic chuck 130. As a result, the relative position between the magnetic chuck 130 and the electrostatic chuck 120 is fixed and properly defined, so that the mask is chucked toward the substrate through the magnetic chuck 130 at an accurate position. Can do.

  [0045] FIG. 2 is a schematic illustration of a substrate carrier 200 according to some embodiments described herein. Since the substrate carrier 200 of FIG. 2 is similar to the substrate carrier 100 of FIG. 1, the above embodiments can be referred to, and these embodiments are not repeated here. The electrostatic chuck 120 and magnetic chuck 130 integrated with the carrier body 101 of the substrate carrier 200 are shown in detail in FIG.

  [0046] In some embodiments, the electrostatic chuck 120 can include one or more electrodes 210 that can be configured to generate an adjustable predetermined electrostatic grip force. The one or more electrodes 210 may be connected to a first power supply 212, for example, a high voltage source for applying a high voltage to the one or more electrodes 210.

  [0047] The electrostatic chuck 120 may be configured as a monopolar chuck, a bipolar chuck, or a multipolar chuck. A monopolar chuck can be understood as an electrostatic chuck that includes one or more electrodes that can be connected to a power source (eg, a high voltage source). The power source is configured to supply a unipolar voltage to one or more electrodes. For example, according to some embodiments that can be combined with other embodiments described herein, one or more of the electrostatic chucks can be induced such that a negative charge is induced on the support surface of the substrate carrier. A positive voltage is applied to the electrodes. Alternatively, a negative voltage may be applied to one or more electrodes so that a positive charge is induced on the support surface of the substrate carrier.

  [0048] As used herein, a "bipolar chuck assembly" is understood to be an electrostatic chuck that includes at least one first electrode and at least one second electrode connectable to a power source (eg, a high voltage source). be able to. The power supply is configured to supply a first polarity voltage to the first electrode and a second polarity voltage to the second electrode. For example, a negative voltage can be applied to the first electrode and a positive voltage can be applied to the second electrode, or vice versa. Accordingly, a corresponding negatively charged region and a corresponding positively charged region can be generated on the support surface 102 by electrostatic induction. In some embodiments, a symmetrical bipolar voltage is provided.

  [0049] The multipolar chuck assembly may be provided with a plurality of independently controllable electrodes.

  [0050] The electrostatic chuck 120 of FIG. 2 includes at least one first electrode and at least one second electrode, and is connected to a positive voltage (+) via a first power supply 212 (eg, a high voltage source). Is applied to the first electrode, and a negative voltage (-) is applied to the second electrode. In order to increase the gripping force provided by the electrostatic chuck, in some embodiments, at least one first electrode and at least one second electrode can be interleaved. Alternatively or additionally, the first electrode and the second electrode can be arranged alternately. For example, the electrostatic chuck 120 may include a plurality of wires that are alternately positively and negatively charged.

  [0051] In some embodiments, the magnetic chuck 130 is an electromagnetic chuck that includes one or more magnets 231 configured as an electromagnet (eg, including a coil) for generating a magnetic field. A second power source 215 can be provided to power one or more magnets 231. An electrical connection line 232 may be provided to connect the second power source 215 to each coil winding (not shown in FIG. 2) of one or more electromagnets. The polarity of adjacent magnets directed toward the support surface may be opposite in some embodiments. In particular, the magnets can be arranged such that the polarity of each adjacent magnet directed towards the support surface is the opposite polarity. For example, as shown in FIG. 2, the windings of adjacent electromagnets can be reversed so that an alternating arrangement of windings is provided.

  [0052] The first power supply 212 and the second power supply 215 are integrated as a single power supply having a plurality of different output terminals for powering the magnetic chuck 130 and the electrostatic chuck 120 separately and independently. May be.

  [0053] The electrostatic chuck 120 and the electromagnetic chuck 130 may operate independently and / or may be controlled by a control unit, which controls when to chuck the mask, chucks the substrate The timing to release, the timing to release the mask, the timing to release the substrate, the chucking force of the substrate, and / or the chucking force of the mask.

  [0054] In some embodiments that can be combined with other embodiments described herein, one or more magnets 231 of the magnetic chuck 130 are disposed at a first distance D1 from the support surface 102. The The first distance D1 between the one or more magnets 231 and the support surface 102 is short when the one or more magnets 231 and the one or more electrodes 210 of the electrostatic chuck are integrated in the same carrier body. It can be a distance. For example, the first distance D1 can be 10 cm or less, particularly 5 cm or less, and more specifically 3 cm or less.

  [0055] By positioning the magnetic chuck 130 closer to the support surface 102 of the carrier body 101 of the substrate carrier so that the mask and / or mask frame can be more reliably attracted toward the support surface, the mask 20 The magnetic force generated by the magnetic chuck at the position can be increased. In particular, the edge region of the mask 20 can be attracted to the direct contact with the substrate or close to the substrate as a result of the increased magnetic force.

  [0056] In some embodiments, the one or more electrodes 210 of the electrostatic chuck 120 are disposed at a second distance D2 from the support surface 102 of the carrier body 101. The second distance D2 between the one or more electrodes 210 and the support surface 102 may be a short distance when the one or more electrodes 210 are integrated with the carrier body 101 at a position close to the support surface. it can. For example, the second distance D2 can be 8 cm or less, particularly 4 cm or less, and more specifically 1 cm or less.

  [0057] The second distance D2 may be shorter than the first distance D1. In particular, the one or more electrodes 210 can be disposed closer to the support surface than the one or more magnets 231. For example, the difference between the first distance D1 and the second distance D2 can be 5 cm or less, particularly 2 cm or less. In other words, the electrode 210 can be disposed adjacent to the support surface 102, and the magnet 231 can be disposed behind the one or more electrodes 210 at a short distance (eg, 2 cm or less). Therefore, the substrate can be reliably attracted to the support surface 102, and the mask 20 can be reliably attracted toward the substrate 10.

  [0058] In some embodiments, the second distance D2 is essentially equal to the first distance D1. For example, the electrodes of the electrostatic chuck and the magnets of the magnetic chuck can be provided at the same distance from the support surface of the carrier body, for example alternately or alternately. In some embodiments, the second distance D2 is shorter than the first distance D1. In other words, the magnet of the electrostatic chuck can be disposed closer to the support surface than the electrode of the electrostatic chuck. The magnetic force at the position of the mask can be increased.

  [0059] FIG. 3 is a schematic diagram of a substrate carrier 300 according to some embodiments described herein. Since the substrate carrier 300 of FIG. 3 is similar to the substrate carrier of FIGS. 1 and 2, the above embodiments can be referred to and will not be repeated here. The substrate carrier 300 includes a magnetic chuck 130 having two or more chucking zones. For example, the magnetic chuck 130 may include a plurality of chucking zones that can be independently controlled.

  [0060] The substrate carrier 300 includes an electrostatic chuck 120 having one or more electrodes for attracting the substrate 10 toward the support surface 102 and one for attracting the mask 20 and / or mask frame toward the substrate carrier. Or a magnetic chuck 130 having a plurality of magnets (particularly electromagnets). The electrostatic chuck 120 and the magnetic chuck 130 can be integrated with the carrier body 101 of the substrate carrier 100.

  [0061] In some embodiments that can be combined with other embodiments described herein, the magnetic chuck 130 is configured to generate a first magnetic field in the first region 131 of the support surface. It includes a first chucking zone 132 configured and a second chucking zone 134 configured to generate a second magnetic field in the second region 133 of the support surface. For example, the first chucking zone 132 is disposed in an inner region of the carrier body 101 and is configured to generate a first magnetic field in the central region of the support surface 102 and / or a second chucking. The zone 134 is arranged in an outer region of the carrier body 101 and is configured to generate a second magnetic field in the peripheral region of the support surface 102 that at least partially surrounds the central region.

  [0062] In some embodiments, the first chucking zone 132 of the magnetic chuck 130 attracts a first portion of the mask 20 (eg, the central portion of the mask) toward the first region 131 of the support surface. Configured and arranged as such. The second chucking zone 134 of the magnetic chuck 130 attracts the second portion of the mask (eg, the outer portion or the edge 22 of the mask and / or the mask frame 25) toward the second region 133 of the support surface. In particular, the second region 133 of the support surface can partially or completely surround the first region 131.

  [0063] In some embodiments, the second chucking zone 134 can be adapted to the size of the mask frame 25 holding the mask or to a frame having a frame size that can be adapted to the size of the edge region of the mask. Can have a shape.

  [0064] The first chucking zone 132 may include a plurality of first electromagnets disposed in the interior region of the carrier body 101, and / or the second chucking zone 134 may partially cover the interior region. Alternatively, it may include a plurality of second electromagnets disposed in an outer region of the carrier body 101 that can be completely surrounded. The plurality of second electromagnets may be arranged in an array having a frame shape surrounding the plurality of first electromagnets.

  [0065] In some embodiments, the power source 140 provides power to at least one first electromagnet in the first chucking zone 132 and at least one second electromagnet in the second chucking zone 134. Is provided. In particular, the at least one electromagnet can be powered by the power source 140 independently of the at least one second electromagnet. Accordingly, the first magnetic force of the first chucking zone 132 can be set to a first value, and the second magnetic force of the second chucking zone 132 can be different from the first value. Value can be set.

  [0066] A power source can be provided on the substrate carrier so that it can be moved and transported with the substrate carrier. Alternatively, the power source can be provided as a separate unit, for example outside the vacuum chamber of the deposition apparatus. For example, electrical contacts can be provided on the substrate carrier to electrically connect the electromagnet of the magnetic chuck and an externally located power source when the substrate carrier is in a designated position for deposition.

  [0067] The edge 22 of the mask 20 is typically secured to a mask frame 25 that can surround the mask. Typically, the mask frame has a greater mass than the mask and can be bent by gravity, especially when the mask frame is placed in an essentially vertical orientation (+/− 10 °). Due to the bending of the mask frame due to gravity, a gap is formed between the substrate and the mask. For example, the mask edge 22 fixed to the mask frame is pulled away from the substrate together with the mask frame by gravity. Such a gap between the mask and the substrate can cause a shadowing effect of the mask during deposition that adversely affects the pattern deposited on the substrate.

  [0068] The magnetic force of the magnetic chuck can be sufficient to attract the central portion of the mask toward the substrate, but the magnetic force of the magnetic chuck can be applied to the substrate during deposition, for example, due to the larger mass of the mask frame. And may be too small to attract the mask frame 25 and / or the edge 22 of the mask. According to embodiments described herein, the magnetic force of the magnetic chuck at the position of the mask can be increased by integrating the magnetic chuck with the e-chuck.

  [0069] According to further aspects described herein, the mask edge 22 and / or the mask frame 25 are directed toward the support surface by a second magnetic force generated by the second chucking zone 134. Be attracted. The value of the second magnetic force may be different from the value of the first magnetic force generated by the first chucking zone 132. For example, the first chucking zone 132 can generate a first magnetic force sufficient to attract a central portion of the mask toward the substrate, and the second chucking zone 134 can be directed toward the substrate. A stronger second magnetic force sufficient to attract the edges 22 and / or the mask frame 25 can be generated. The shadowing effect during deposition can be reduced or completely avoided.

  [0070] According to some embodiments, the first chucking zone 132 is configured to attract a mask and the second chucking zone 134 is configured to attract a mask frame. The first chucking zone 132 and the second chucking zone 134 can be controlled independently. For example, the current conducted through the first chucking zone electromagnet is set appropriately, and the current conducted through the second chucking zone electromagnet is set to a different value. In this way, the deposition pattern can be improved and the shadowing effect can be reduced.

  [0071] FIG. 4 is a schematic diagram of a deposition apparatus 400 for depositing material on a substrate, according to some embodiments described herein. The deposition apparatus can include a substrate carrier (eg, substrate carrier 100 of FIG. 1) according to any of the embodiments described in the present invention. The deposition apparatus 400 further includes a deposition source 150 (eg, an evaporation apparatus) configured to deposit the material 105 on the substrate 10 held by the substrate carrier 100.

  [0072] The deposition apparatus 400 can further include a vacuum chamber 410, where the deposition source 150 and the substrate carrier 100 are disposed within the vacuum chamber. The deposition source 150 includes a crucible containing the material to be evaporated, and at least one distribution pipe for directing the evaporated material toward a plurality of openings in the distribution pipe directed toward the substrate 10. It can be a device.

  [0073] The deposition source 150 can be provided on a movable support so that the deposition source 150 can pass through the substrate 10 during evaporation.

  [0074] The substrate carrier 100 can be positioned such that when the substrate is held on the support surface of the substrate carrier, the angle α between the vertical direction and the substrate is between 0 ° and −10 °. In particular, the substrate can be arranged so that the surface to be coated during deposition is slightly downwards. Particle generation can be reduced.

  [0075] The substrate is attracted to the support surface of the substrate carrier by the electrostatic chuck 120 and the mask is attracted toward the support surface by the electrostatic chuck 130. The electrostatic chuck 120 and the magnetic chuck 130 are integrated with the carrier body of the substrate carrier.

  [0076] The magnetic chuck 130 can include a plurality of chucking zones, wherein the at least one outer chucking zone is configured to attract the mask frame and / or the outer portion of the mask, the at least one inner chucking zone being It is configured to attract the central portion of the mask. The gap 450 between the mask edge and the substrate can be reduced by setting the magnetic field in the external chucking zone to an appropriate value.

  [0077] FIG. 5 is a flow diagram illustrating a method of processing a substrate, according to further aspects described herein. In box 510, the substrate is attracted toward the support surface of the substrate carrier by electrostatic chuck 120 integrated with the carrier body of the substrate carrier.

  [0078] For example, the substrate is placed on the support surface in a non-vertical orientation, after which the electrostatic chuck is activated and the substrate carrier rotates, for example, to an essentially vertical orientation (+/− 20 °). Be made.

  [0079] When the substrate is held on the support surface of the substrate carrier, the substrate carrier may be transported into the vacuum processing system (eg, into the vacuum chamber of the deposition apparatus). For example, the substrate carrier can be moved into the deposition apparatus with the substrate, and the deposition source can be located in the deposition apparatus.

  [0080] In box 520, mask 20 is placed in front of substrate 10. The mask can be aligned with the substrate to establish a predetermined relative position between the substrate and the mask. For example, by performing rough alignment and then performing precise alignment, the positional deviation between the mask and the substrate in the vertical direction and / or the horizontal direction is surely set to 10 μm or less, particularly 3 μm or less. be able to.

    [0081] In addition, in box 530, mask 20 and / or mask frame 25 holding the mask are pulled toward the support surface by magnetic chuck 130 integrated with the carrier body of the substrate carrier. For example, at least a portion of the mask or the entire mask can be pulled toward the substrate such that the mask is in direct contact with the substrate.

  [0082] In box 540, the material can be deposited on the substrate using, for example, an evaporator. When the mask is placed in front of the substrate, a material pattern corresponding to the open pattern of the mask can be formed on the substrate.

  [0083] After deposition, the mask may be released from the substrate by at least partially deactivating the magnetic chuck. The mask and the substrate can be separated.

  [0084] The substrate can then be transported out of the deposition apparatus and / or dechucked and removed from the support surface by deactivating the electrostatic chuck.

  [0085] Prior to deposition, the mask 20 may be attracted toward the support surface of the substrate carrier by the first chucking zone 132 of the magnetic chuck such that the mask is at least partially in contact with the substrate 10. In particular, the central portion of the mask can be attracted toward the substrate by the magnetic field generated by the first chucking zone 132. The outer portion or edge of the mask and / or mask frame 25 can be attracted towards the support surface of the substrate carrier by the second chucking zone 134 of the magnetic chuck. The second chucking zone 134 can be located in the peripheral region of the carrier body and / or can at least partially surround the first chucking zone 132.

  [0086] In some embodiments that can be combined with other embodiments described herein, the magnetic chuck is an electromagnetic chuck, the first chucking zone is power shared by the first power, The second chucking zone is powered by a second power different from the first power.

  [0087] In some embodiments, the edge of the mask 20 is secured to the mask frame 25, and the gap 450 between the edge of the mask and the substrate is a second chucking zone in addition to the first chucking zone 132. Reduced by activating 134.

  [0088] Material can be deposited on the substrate, and the angle α between the vertical direction and the substrate is between 0 ° and −20 °, in particular between −1 ° and −5 ° during the deposition. It is. In particular, the substrate can be arranged to tilt slightly downward during the deposition with a tilt angle of -1 ° to -5 °. Particle generation can be reduced.

  [0089] While the above description is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure. The scope of the present disclosure is determined by the claims.

[0089] While the above description is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure. The scope of the present disclosure is determined by the claims.
Moreover, this application contains the aspect described below.
(Aspect 1)
A substrate carrier (100) for holding a substrate (10) during deposition comprising:
An electrostatic chuck (120) configured to attract the substrate toward the support surface (102) of the substrate carrier (100); and
Magnetic chuck (130) configured to attract the mask (20) and / or mask frame (25) toward the support surface (102) of the substrate carrier (100)
With
A substrate carrier in which the electrostatic chuck (120) and the magnetic chuck (130) are integrated with a carrier body (101) of the substrate carrier (100).
(Aspect 2)
One or more magnets of the magnetic chuck (130) are arranged at a first distance (D1) from the support surface (102) of the carrier body (101), and the first distance (D1) is 10 cm or less. In particular, the substrate carrier according to aspect 1, which is 5 cm or less, more particularly 2 cm or less.
(Aspect 3)
One or more electrodes (210) of the electrostatic chuck (120) are disposed at a second distance (D2) from the support surface (102) of the carrier body (101), and the second distance (D2). ) Is shorter than the first distance (D1), and in particular, the difference between the first distance (D1) and the second distance (D2) is 2 cm or less.
(Aspect 4)
Aspect 1 to 3 wherein said carrier body (101) is formed as an integral plate structure in which both said electrostatic chuck (120) and said magnetic chuck (130) are disposed. A substrate carrier as described in 1.
(Aspect 5)
5. The substrate carrier according to any one of aspects 1 to 4, wherein the magnetic chuck (130) is an electromagnetic chuck including one or more electromagnets.
(Aspect 6)
A first chucking zone (132) configured to generate a first magnetic field in the first region (131) of the support surface; and a second chuck of the support surface. A substrate carrier according to any one of aspects 1 to 5, comprising a second chucking zone (134) configured to generate a second magnetic field in the region (133).
(Aspect 7)
A power supply configured to power at least one first electromagnet of the first chucking zone (132) independently of at least one second electromagnet of the second chucking zone (134). The substrate carrier according to aspect 6, further comprising (140).
(Aspect 8)
The first chucking zone (132) is configured to attract the mask (20) toward the first region (131) of the support surface, and the second chucking zone (134). ) Holds the mask edge (22) and / or the mask towards the second region (133) of the support surface partially or completely surrounding the first region (131) 8. A substrate carrier according to aspect 6 or 7, wherein the substrate carrier is configured to attract a mask frame (25).
(Aspect 9)
The first chucking zone (132) includes a plurality of first electromagnets disposed in an internal region of the carrier body (101) and / or the second chucking zone (134) The substrate carrier according to any one of aspects 6 to 8, comprising a plurality of second electromagnets arranged in an external region of the carrier body (101).
(Aspect 10)
A deposition apparatus (400) for depositing material on a substrate, comprising:
The substrate carrier (100) according to any one of aspects 1 to 9, and
A deposition source (150) configured to deposit material (105) on a substrate (10) held by the substrate carrier.
A deposition apparatus comprising:
(Aspect 11)
A method of processing a substrate, comprising:
Attracting the substrate (10) toward the support surface of the substrate carrier by means of an electrostatic chuck (120) integrated into the carrier body (101) of the substrate carrier;
Placing a mask (20) in front of the substrate; and
The mask (20) and / or the mask frame (25) holding the mask is attracted toward the support surface by a magnetic chuck (130) integrated with the carrier body (101) of the substrate carrier.
Including methods.
(Aspect 12)
The mask (20) is attracted toward the support surface of the substrate carrier by the first chucking zone (132) of the magnetic chuck such that the mask is at least partially in contact with the substrate (10). The method of claim 11, wherein the edge of the mask and / or the mask frame is attracted toward the support surface of the substrate carrier by a second chucking zone (134) of the magnetic chuck.
(Aspect 13)
The magnetic chuck is an electromagnetic chuck, the first chucking zone (132) is powered by a first power, and the second chucking zone (134) is a second different from the first power. A method according to aspect 12, wherein the method is powered by
(Aspect 14)
The edge of the mask is secured to the mask frame (25), and a gap (450) between the edge of the mask and the substrate activates the second chucking zone (134). 14. A method according to aspect 12 or 13, wherein the method is reduced.
(Aspect 15)
An embodiment further comprising depositing material on the substrate, wherein the angle (α) between the vertical direction during deposition and the substrate is 0 ° to −10 °, in particular −1 ° to −5 ° The method according to any one of 11 to 14.

Claims (15)

A substrate carrier (100) for holding a substrate (10) during deposition comprising:
An electrostatic chuck (120) configured to attract the substrate toward the support surface (102) of the substrate carrier (100), and a mask (20) and / or toward the support surface (102) of the substrate carrier (100) Or a magnetic chuck (130) configured to attract the mask frame (25)
With
A substrate carrier in which the electrostatic chuck (120) and the magnetic chuck (130) are integrated with a carrier body (101) of the substrate carrier (100).   One or more magnets of the magnetic chuck (130) are arranged at a first distance (D1) from the support surface (102) of the carrier body (101), and the first distance (D1) is 10 cm or less. The substrate carrier according to claim 1, in particular 5 cm or less, more particularly 2 cm or less.   One or more electrodes (210) of the electrostatic chuck (120) are disposed at a second distance (D2) from the support surface (102) of the carrier body (101), and the second distance (D2). ) Is shorter than the first distance (D1), and in particular, the difference between the first distance (D1) and the second distance (D2) is 2 cm or less.   The carrier body (101) is formed as an integral plate structure in which both the electrostatic chuck (120) and the magnetic chuck (130) are disposed. The substrate carrier according to item.   The substrate carrier according to any one of the preceding claims, wherein the magnetic chuck (130) is an electromagnetic chuck comprising one or more electromagnets.   A first chucking zone (132) configured to generate a first magnetic field in the first region (131) of the support surface; and a second chuck of the support surface. The substrate carrier according to any one of the preceding claims, comprising a second chucking zone (134) configured to generate a second magnetic field in the region (133).   A power supply configured to power at least one first electromagnet of the first chucking zone (132) independently of at least one second electromagnet of the second chucking zone (134). The substrate carrier of claim 6 further comprising (140).   The first chucking zone (132) is configured to attract the mask (20) toward the first region (131) of the support surface, and the second chucking zone (134). ) Holds the mask edge (22) and / or the mask towards the second region (133) of the support surface partially or completely surrounding the first region (131) 8. A substrate carrier according to claim 6 or 7, wherein the substrate carrier is configured to attract a mask frame (25).   The first chucking zone (132) includes a plurality of first electromagnets disposed in an internal region of the carrier body (101) and / or the second chucking zone (134) The substrate carrier according to any one of claims 6 to 8, comprising a plurality of second electromagnets arranged in an external region of the carrier body (101). A deposition apparatus (400) for depositing material on a substrate, comprising:
A substrate carrier (100) according to any one of claims 1 to 9, and a deposition source (150) configured to deposit material (105) on a substrate (10) held by the substrate carrier.
A deposition apparatus comprising: A method of processing a substrate, comprising:
Attracting the substrate (10) toward the support surface of the substrate carrier by means of an electrostatic chuck (120) integrated into the carrier body (101) of the substrate carrier;
The mask (20) and the mask (20) are disposed toward the support surface by disposing a mask (20) in front of the substrate and a magnetic chuck (130) integrated with the carrier body (101) of the substrate carrier. Attracting a mask frame (25) holding the mask.   The mask (20) is attracted toward the support surface of the substrate carrier by the first chucking zone (132) of the magnetic chuck such that the mask is at least partially in contact with the substrate (10). 12. The method of claim 11, wherein the mask edge and / or mask frame is attracted toward the support surface of the substrate carrier by a second chucking zone (134) of the magnetic chuck.   The magnetic chuck is an electromagnetic chuck, the first chucking zone (132) is powered by a first power, and the second chucking zone (134) is a second different from the first power. The method of claim 12, wherein the method is powered by   The edge of the mask is secured to the mask frame (25), and a gap (450) between the edge of the mask and the substrate activates the second chucking zone (134). 14. A method according to claim 12 or 13, wherein the method is reduced.   Further comprising depositing material on the substrate, wherein the angle (α) between the vertical direction during deposition and the substrate is 0 ° to −10 °, in particular −1 ° to −5 °. Item 15. The method according to any one of Items 11 to 14.

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