JP2019201013A

JP2019201013A - Component for semiconductor manufacturing device

Info

Publication number: JP2019201013A
Application number: JP2018092745A
Authority: JP
Inventors: 紘彰毛利; Hiroaki Mori; 七田　貴史; Takashi Shichida; 貴史七田; 淳土田; Atsushi Tsuchida
Original assignee: NGK Spark Plug Co Ltd
Current assignee: Niterra Co Ltd
Priority date: 2018-05-14
Filing date: 2018-05-14
Publication date: 2019-11-21
Anticipated expiration: 2038-05-14
Also published as: JP7122154B2

Abstract

【課題】端子部材と電極との間の接合強度が低下することを抑制しつつ、ろう付け部における残留応力に起因するセラミックス部材のクラックの発生を効果的に抑制する。【解決手段】半導体製造装置用部品は、凹部が形成されたセラミックス部材と、凹部の底面に露出した電極と、凹部内に収容された柱状の第１の部分を有する金属製の端子部材と、電極と端子部材の第１の部分とを接合するろう付け部とを備える。端子部材の第１の部分の中心軸を含む断面において、第１の部分の外周面に、中心軸方向に沿って交互に並ぶ複数の凸部および複数の凹部が形成されている。【選択図】図３PROBLEM TO BE SOLVED: To effectively suppress the generation of cracks in a ceramic member due to residual stress in a brazing portion while suppressing a decrease in bonding strength between a terminal member and an electrode. A semiconductor manufacturing device component includes a ceramic member having a recess, an electrode exposed at the bottom of the recess, and a metal terminal member having a columnar first portion housed in the recess. And a brazing portion for joining the electrode and the first portion of the terminal member. In a cross section including the central axis of the first portion of the terminal member, a plurality of convex portions and a plurality of concave portions arranged alternately along the central axis direction are formed on the outer peripheral surface of the first portion. [Selection diagram] Fig. 3

Description

本明細書に開示される技術は、半導体製造装置用部品に関する。 The technology disclosed in this specification relates to a component for a semiconductor manufacturing apparatus.

例えば成膜装置（ＣＶＤ成膜装置やスパッタリング成膜装置等）やエッチング装置（プラズマエッチング装置等）といった半導体製造装置を構成する半導体製造装置用部品として、対象物（例えば、半導体ウェハ）を保持しつつ所定の処理温度に加熱する加熱装置（「サセプタ」とも呼ばれる）が知られている。 For example, an object (for example, a semiconductor wafer) is held as a part for a semiconductor manufacturing apparatus that constitutes a semiconductor manufacturing apparatus such as a film forming apparatus (CVD film forming apparatus, sputtering film forming apparatus, etc.) or an etching apparatus (plasma etching apparatus, etc.). On the other hand, a heating device (also referred to as “susceptor”) for heating to a predetermined processing temperature is known.

一般に、加熱装置は、セラミックスにより形成された保持部材を備える。保持部材は、例えば、一の表面（以下、「保持面」という）と、保持面とは反対側の表面（以下、「裏面」という）とを有する板状部材である。保持部材には、抵抗発熱体と、抵抗発熱体に電気的に接続された受電電極とが配置されている。受電電極は、保持部材の裏面に形成された凹部の底面に露出しており、少なくとも一部分が凹部内に収容された金属製の端子部材と、ろう付けにより接合されている。電源から端子部材および受電電極を介して抵抗発熱体に電圧が印加されると、抵抗発熱体が発熱し、これにより、保持部材の保持面上に保持された対象物（例えば、半導体ウェハ）が加熱される。 Generally, a heating device includes a holding member made of ceramics. The holding member is, for example, a plate-like member having one surface (hereinafter referred to as “holding surface”) and a surface opposite to the holding surface (hereinafter referred to as “back surface”). A resistance heating element and a power receiving electrode electrically connected to the resistance heating element are disposed on the holding member. The power receiving electrode is exposed on the bottom surface of the concave portion formed on the back surface of the holding member, and at least a part thereof is joined to a metal terminal member accommodated in the concave portion by brazing. When a voltage is applied from the power source to the resistance heating element via the terminal member and the power receiving electrode, the resistance heating element generates heat, whereby an object (for example, a semiconductor wafer) held on the holding surface of the holding member is generated. Heated.

従来、端子部材と受電電極とを接合するろう付け部における残留応力を低減して、該残留応力に起因する保持部材のクラックの発生を抑制するために、端子部材における受電電極側の部分の径を細くする技術が知られている（例えば、特許文献１参照）。 Conventionally, in order to reduce the residual stress at the brazed portion where the terminal member and the receiving electrode are joined, and to suppress the occurrence of cracks in the holding member due to the residual stress, the diameter of the portion on the receiving electrode side of the terminal member There is known a technique for thinning (see, for example, Patent Document 1).

特開平９−２３５１６６号公報JP-A-9-235166

しかしながら、上記従来の技術では、ろう付け部における残留応力の低減が十分ではなく、該残留応力に起因する保持部材のクラックの発生を効果的に抑制することができない、という課題がある。 However, in the above conventional technique, there is a problem that the residual stress in the brazed portion is not sufficiently reduced, and the occurrence of cracks in the holding member due to the residual stress cannot be effectively suppressed.

なお、このような課題は、上述した構成の加熱装置に限らず、凹部が形成されたセラミックス部材と、該凹部の底面に露出した電極と、該凹部内に収容された柱状の第１の部分を有する金属製の端子部材と、上記電極と上記端子部材の第１の部分とを接合するろう付け部とを備える半導体製造装置用部品に共通の課題である。 Such a problem is not limited to the heating device having the above-described configuration, and the ceramic member in which the recess is formed, the electrode exposed on the bottom surface of the recess, and the columnar first portion accommodated in the recess. This is a problem common to parts for semiconductor manufacturing apparatuses, each of which includes a metal terminal member having, and a brazing portion that joins the electrode and the first portion of the terminal member.

本明細書では、上述した課題を解決することが可能な技術を開示する。 In this specification, the technique which can solve the subject mentioned above is disclosed.

本明細書に開示される技術は、例えば、以下の形態として実現することが可能である。 The technology disclosed in the present specification can be realized as, for example, the following forms.

（１）本明細書に開示される半導体製造装置用部品は、凹部が形成されたセラミックス部材と、前記凹部の底面に露出した電極と、金属製の端子部材であって、前記凹部内に収容された柱状の第１の部分を有する、端子部材と、前記電極と前記端子部材の前記第１の部分とを接合するろう付け部と、を備える半導体製造装置用部品において、前記端子部材の前記第１の部分の中心軸を含む断面において、前記第１の部分の外周面に、前記中心軸方向に沿って交互に並ぶ複数の凸部および複数の凹部が形成されている。本半導体製造装置用部品では、端子部材の第１の部分の中心軸を含む断面において、第１の部分の外周面に、中心軸方向に沿って交互に並ぶ複数の凸部および複数の凹部が形成されているため、端子部材の第１の部分の表面積が比較的大きくなる。すなわち、端子部材の第１の部分の外周面が、比較的多くのろう材を保持する（収容する）ことができる。そのため、端子部材と電極とのろう付け接合の際に、十分な接合強度を確保するために過剰に供給されたろう材が、端子部材の外周面に沿って比較的長い距離を移動することを回避することができ、その結果、ろう付け部のフィレットが適正な形状となって、ろう付け部における残留応力が比較小さくなる。従って、本半導体製造装置用部品によれば、端子部材と電極との間の接合強度が低下することを抑制しつつ、ろう付け部における残留応力を効果的に低減することができ、ろう付け部における残留応力に起因してセラミックス部材にクラックが発生することを効果的に抑制することができる。また、本半導体製造装置用部品によれば、端子部材の第１の部分の表面積を比較的大きくすることができるため、過剰なろう材がセラミックス部材の凹部の側面と端子部材との間の隙間に進入して（這い上がって）両者が接合されることを抑制することができ、セラミックス部材と端子部材との間の熱膨張差に起因してクラックが発生することを抑制することができる。 (1) A component for a semiconductor manufacturing apparatus disclosed in the present specification is a ceramic member in which a recess is formed, an electrode exposed on the bottom surface of the recess, and a metal terminal member that is accommodated in the recess. A component for a semiconductor manufacturing apparatus, comprising: a terminal member having a column-shaped first portion; and a brazing portion that joins the electrode and the first portion of the terminal member. In the cross section including the central axis of the first portion, a plurality of convex portions and a plurality of concave portions arranged alternately along the central axis direction are formed on the outer peripheral surface of the first portion. In the semiconductor manufacturing apparatus component, in the cross section including the central axis of the first portion of the terminal member, a plurality of convex portions and a plurality of concave portions arranged alternately along the central axis direction are formed on the outer peripheral surface of the first portion. Since it is formed, the surface area of the first portion of the terminal member becomes relatively large. That is, the outer peripheral surface of the first portion of the terminal member can hold (accommodate) a relatively large amount of brazing material. Therefore, when brazing and joining the terminal member and the electrode, it is avoided that the brazing material excessively supplied to ensure sufficient joining strength moves a relatively long distance along the outer peripheral surface of the terminal member. As a result, the fillet of the brazed portion has an appropriate shape, and the residual stress at the brazed portion is relatively small. Therefore, according to the component for semiconductor manufacturing apparatus, it is possible to effectively reduce the residual stress in the brazed portion while suppressing a decrease in the bonding strength between the terminal member and the electrode. It is possible to effectively suppress the occurrence of cracks in the ceramic member due to the residual stress at. In addition, according to the semiconductor manufacturing apparatus component, since the surface area of the first portion of the terminal member can be made relatively large, excess brazing material causes a gap between the side surface of the concave portion of the ceramic member and the terminal member. It is possible to prevent the two members from entering (crawling up) and being joined together, and to prevent the occurrence of cracks due to the difference in thermal expansion between the ceramic member and the terminal member.

（２）上記半導体製造装置用部品において、前記端子部材の前記第１の部分は、柱状の開口側部分と、前記開口側部分に対して前記凹部の底面側に位置し、前記開口側部分より径の小さい柱状の底面側部分と、を有し、前記端子部材の前記第１の部分の中心軸を含む前記断面において、前記複数の凸部および複数の凹部は、前記第１の部分の前記底面側部分の外周面に形成されている構成としてもよい。本半導体製造装置用部品によれば、セラミックス部材に形成された凹部の側面と端子部材の第１の部分との間に大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が端子部材の外周面に沿って比較的長い距離を移動することを回避することができ、ろう付け部のフィレットを適正な形状とすることができ、ろう付け部における残留応力に起因してセラミックス部材にクラックが発生することを効果的に抑制することができる。また、本半導体製造装置用部品によれば、セラミックス部材に形成された凹部の側面と端子部材の第１の部分との間に大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材がセラミックス部材の凹部の側面と端子部材との間の隙間に進入して両者が接合されることを効果的に抑制することができ、セラミックス部材と端子部材との間の熱膨張差に起因してクラックが発生することを効果的に抑制することができる。 (2) In the semiconductor manufacturing apparatus component, the first portion of the terminal member is positioned on the bottom side of the recess with respect to the columnar opening side portion and the opening side portion, and from the opening side portion. A columnar bottom surface portion having a small diameter, and in the cross section including the central axis of the first portion of the terminal member, the plurality of convex portions and the plurality of concave portions are the first portion of the first portion. It is good also as a structure currently formed in the outer peripheral surface of a bottom face side part. According to this semiconductor manufacturing apparatus component, since a large space is secured between the side surface of the recess formed in the ceramic member and the first portion of the terminal member, even if the brazing material is significantly excessive, It can be avoided that the brazing material moves a relatively long distance along the outer peripheral surface of the terminal member, the fillet of the brazing part can be formed in an appropriate shape, and it is caused by the residual stress in the brazing part. Thus, the occurrence of cracks in the ceramic member can be effectively suppressed. In addition, according to the semiconductor manufacturing apparatus component, since a large space is secured between the side surface of the recess formed in the ceramic member and the first portion of the terminal member, the brazing material is significantly excessive. However, it is possible to effectively suppress the brazing material from entering the gap between the side surface of the concave portion of the ceramic member and the terminal member and joining them together, and the thermal expansion between the ceramic member and the terminal member. The occurrence of cracks due to the difference can be effectively suppressed.

（３）上記半導体製造装置用部品において、前記端子部材の前記第１の部分は、前記開口側部分と前記底面側部分との間に位置し、前記底面側部分の最小径より径の小さい柱状の中間部分を有する構成としてもよい。本半導体製造装置用部品によれば、セラミックス部材に形成された凹部の側面と端子部材の第１の部分との間にさらに大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が端子部材の外周面に沿って比較的長い距離を移動することを回避することができ、ろう付け部のフィレットを適正な形状とすることができ、ろう付け部における残留応力に起因してセラミックス部材にクラックが発生することを極めて効果的に抑制することができる。また、本半導体製造装置用部品によれば、セラミックス部材に形成された凹部の側面と端子部材の第１の部分との間にさらに大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材がセラミックス部材の凹部の側面と端子部材との間の隙間に進入して両者が接合されることを極めて効果的に抑制することができ、セラミックス部材と端子部材との間の熱膨張差に起因してクラックが発生することを極めて効果的に抑制することができる。 (3) In the semiconductor manufacturing apparatus component, the first portion of the terminal member is located between the opening-side portion and the bottom-side portion and has a columnar shape having a diameter smaller than the minimum diameter of the bottom-side portion. It is good also as a structure which has these intermediate parts. According to the semiconductor manufacturing apparatus component, since a larger space is secured between the side surface of the recess formed in the ceramic member and the first portion of the terminal member, even if the brazing material is significantly excessive , It is possible to avoid the brazing material moving a relatively long distance along the outer peripheral surface of the terminal member, the fillet of the brazed part can be shaped appropriately, and due to residual stress in the brazed part Thus, the occurrence of cracks in the ceramic member can be extremely effectively suppressed. In addition, according to the semiconductor manufacturing apparatus component, since a larger space is secured between the side surface of the recess formed in the ceramic member and the first portion of the terminal member, the brazing material is significantly excessive. However, it is possible to very effectively suppress the brazing material from entering the gap between the side surface of the concave portion of the ceramic member and the terminal member and joining them together, and between the ceramic member and the terminal member. The occurrence of cracks due to the difference in thermal expansion can be extremely effectively suppressed.

（４）上記半導体製造装置用部品において、前記端子部材の前記第１の部分の中心軸を含む断面において、前記第１の部分の外周面に形成された少なくとも１つの前記凹部内に、前記ろう付け部の一部分が収容されている、ことを特徴とする構成としてもよい。本半導体製造装置用部品によれば、ろう材が不足して端子部材と電極との間の接合強度が低下することを抑制しつつ、ろう付け部における残留応力やセラミックス部材と端子部材との間の熱膨張差に起因してクラックが発生することを抑制することができる。 (4) In the component for a semiconductor manufacturing apparatus, in the cross section including the central axis of the first portion of the terminal member, the brazing is in at least one of the concave portions formed on the outer peripheral surface of the first portion. It is good also as a structure characterized by accommodating a part of attaching part. According to the component for a semiconductor manufacturing apparatus, it is possible to suppress residual stress in the brazed portion or between the ceramic member and the terminal member while suppressing a decrease in the bonding strength between the terminal member and the electrode due to insufficient brazing material. It is possible to suppress the occurrence of cracks due to the difference in thermal expansion.

なお、本明細書に開示される技術は、種々の形態で実現することが可能であり、例えば、半導体製造装置用部品、加熱装置、保持装置、それらの製造方法等の形態で実現することが可能である。 The technology disclosed in this specification can be realized in various forms, for example, in the form of a semiconductor manufacturing apparatus component, a heating apparatus, a holding apparatus, a manufacturing method thereof, and the like. Is possible.

第１実施形態における加熱装置１００の外観構成を概略的に示す斜視図である。It is a perspective view which shows roughly the external appearance structure of the heating apparatus 100 in 1st Embodiment. 第１実施形態における加熱装置１００のＸＺ断面構成を概略的に示す説明図である。It is explanatory drawing which shows roughly the XZ cross-sectional structure of the heating apparatus 100 in 1st Embodiment. 図２のＸ１部における加熱装置１００のＸＺ断面構成を拡大して示す説明図である。It is explanatory drawing which expands and shows the XZ cross-sectional structure of the heating apparatus 100 in the X1 part of FIG. 本実施形態の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の構成を示す説明図である。It is explanatory drawing which shows the structure of the joining location vicinity of the terminal member 70 and the receiving electrode 53 in the heating apparatus 100 of this embodiment. 比較例の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の構成を示す説明図である。It is explanatory drawing which shows the structure of the joining location vicinity of the terminal member 70 and the receiving electrode 53 in the heating apparatus 100 of a comparative example. 第２実施形態の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の詳細構成を示す説明図である。It is explanatory drawing which shows the detailed structure of the joining location vicinity of the terminal member 70 and the receiving electrode 53 in the heating apparatus 100 of 2nd Embodiment. 第３実施形態の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の詳細構成を示す説明図である。It is explanatory drawing which shows the detailed structure of the joining location vicinity of the terminal member 70 and the receiving electrode 53 in the heating apparatus 100 of 3rd Embodiment. 第４実施形態の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の詳細構成を示す説明図である。It is explanatory drawing which shows the detailed structure of the joining location vicinity of the terminal member 70 and the receiving electrode 53 in the heating apparatus 100 of 4th Embodiment.

Ａ．第１実施形態：
Ａ−１．加熱装置１００の構成：
図１は、第１実施形態における加熱装置１００の外観構成を概略的に示す斜視図であり、図２は、第１実施形態における加熱装置１００のＸＺ断面構成を概略的に示す説明図であり、図３は、図２のＸ１部における加熱装置１００のＸＺ断面構成を拡大して示す説明図である。各図には、方向を特定するための互いに直交するＸＹＺ軸が示されている。本明細書では、便宜的に、Ｚ軸正方向を上方向といい、Ｚ軸負方向を下方向というものとするが、加熱装置１００は実際にはそのような向きとは異なる向きで設置されてもよい。他の図についても同様である。 A. First embodiment:
A-1. Configuration of the heating device 100:
FIG. 1 is a perspective view schematically showing an external configuration of the heating device 100 according to the first embodiment, and FIG. 2 is an explanatory diagram schematically showing an XZ sectional configuration of the heating device 100 according to the first embodiment. FIG. 3 is an explanatory diagram showing, in an enlarged manner, the XZ cross-sectional configuration of the heating device 100 in the X1 portion of FIG. In each figure, XYZ axes orthogonal to each other for specifying the direction are shown. In this specification, for the sake of convenience, the positive direction of the Z axis is referred to as the upward direction, and the negative direction of the Z axis is referred to as the downward direction. May be. The same applies to other figures.

加熱装置１００は、対象物（例えば、半導体ウェハＷ）を保持しつつ所定の処理温度（例えば、４００〜８００℃程度）に加熱する装置であり、サセプタとも呼ばれる。加熱装置１００は、例えば、成膜装置（ＣＶＤ成膜装置やスパッタリング成膜装置等）やエッチング装置（プラズマエッチング装置等）といった半導体製造装置を構成する半導体製造装用部品として使用される。 The heating device 100 is a device that heats a predetermined processing temperature (for example, about 400 to 800 ° C.) while holding an object (for example, a semiconductor wafer W), and is also called a susceptor. The heating apparatus 100 is used, for example, as a semiconductor manufacturing equipment component that constitutes a semiconductor manufacturing apparatus such as a film forming apparatus (such as a CVD film forming apparatus or a sputtering film forming apparatus) or an etching apparatus (such as a plasma etching apparatus).

図１および図２に示すように、加熱装置１００は、保持部材１０と支持部材２０とを備える。 As shown in FIGS. 1 and 2, the heating device 100 includes a holding member 10 and a support member 20.

保持部材１０は、Ｚ軸方向（上下方向）に略直交する一の表面（以下、「保持面」という）Ｓ１と、保持面Ｓ１とは反対側の表面（以下、「裏面」という）Ｓ２とを有する略円板状の部材である。保持部材１０は、例えばＡｌＮ（窒化アルミニウム）やＡｌ_２Ｏ_３（アルミナ）を主成分とするセラミックスにより構成されている。なお、本明細書では、主成分とは、含有割合（重量割合）の最も多い成分を意味する。保持部材１０の直径は、例えば１００ｍｍ以上、５００ｍｍ以下程度であり、保持部材１０の厚さ（Ｚ軸方向における寸法）は、例えば３ｍｍ以上、３０ｍｍ以下程度である。保持部材１０は、特許請求の範囲におけるセラミックス部材に相当する。 The holding member 10 includes one surface (hereinafter referred to as “holding surface”) S1 substantially orthogonal to the Z-axis direction (vertical direction), and a surface (hereinafter referred to as “back surface”) S2 opposite to the holding surface S1. It is a substantially disk-shaped member having The holding member 10 is made of ceramics whose main component is, for example, AlN (aluminum nitride) or Al ₂ O ₃ (alumina). In the present specification, the main component means a component having the largest content ratio (weight ratio). The diameter of the holding member 10 is, for example, about 100 mm or more and 500 mm or less, and the thickness (dimension in the Z-axis direction) of the holding member 10 is, for example, about 3 mm or more and 30 mm or less. The holding member 10 corresponds to a ceramic member in the claims.

図２および図３に示すように、保持部材１０の裏面Ｓ２には、後述する一対の端子部材７０や一対の受電電極５３に対応する一対の凹部１２が形成されている。各凹部１２のＺ軸方向に直交する断面（ＸＹ断面）の形状は、略円形である。 As shown in FIGS. 2 and 3, a pair of recesses 12 corresponding to a pair of terminal members 70 and a pair of power receiving electrodes 53 described later are formed on the back surface S 2 of the holding member 10. The shape of the cross section (XY cross section) orthogonal to the Z-axis direction of each recess 12 is substantially circular.

支持部材２０は、Ｚ略方向に延びる略円管状の部材である。支持部材２０は、保持部材１０と同様に、例えばＡｌＮやＡｌ_２Ｏ_３を主成分とするセラミックスにより構成されている。支持部材２０の外径は、例えば３０ｍｍ以上、９０ｍｍ以下程度であり、支持部材２０の高さ（Ｚ軸方向における寸法）は、例えば１００ｍｍ以上、３００ｍｍ以下程度である。 The support member 20 is a substantially circular tubular member extending in the substantially Z direction. Similar to the holding member 10, the support member 20 is made of ceramics mainly composed of AlN or Al ₂ O ₃ , for example. The outer diameter of the support member 20 is, for example, about 30 mm or more and 90 mm or less, and the height (dimension in the Z-axis direction) of the support member 20 is, for example, about 100 mm or more and 300 mm or less.

図２に示すように、支持部材２０には、支持部材２０の上面Ｓ３から下面Ｓ４までＺ軸方向に延びる貫通孔２２が形成されている。貫通孔２２のＺ軸方向に直交する断面（ＸＹ断面）の形状は、略円形である。 As shown in FIG. 2, the support member 20 is formed with a through hole 22 extending in the Z-axis direction from the upper surface S3 to the lower surface S4 of the support member 20. The shape of the cross section (XY cross section) orthogonal to the Z-axis direction of the through hole 22 is substantially circular.

図２に示すように、保持部材１０と支持部材２０とは、保持部材１０の裏面Ｓ２と支持部材２０の上面Ｓ３とがＺ軸方向に互いに対向するように、かつ、保持部材１０と支持部材２０とが互いに略同軸となるように配置されており、公知の接合材料により形成された接合部３０を介して互いに接合されている。 As shown in FIG. 2, the holding member 10 and the supporting member 20 are arranged such that the back surface S2 of the holding member 10 and the upper surface S3 of the supporting member 20 face each other in the Z-axis direction. 20 are arranged so as to be substantially coaxial with each other, and are joined to each other through a joint portion 30 formed of a known joining material.

図２に示すように、保持部材１０の内部には、保持部材１０を加熱するヒータとしての抵抗発熱体５０が配置されている。抵抗発熱体５０は、例えば、Ｚ軸方向視で略螺旋状に延びるパターンを構成している。抵抗発熱体５０は、例えば、タングステンやモリブデン等の導電性材料により形成されている。 As shown in FIG. 2, a resistance heating element 50 as a heater for heating the holding member 10 is disposed inside the holding member 10. The resistance heating element 50 forms, for example, a pattern extending in a substantially spiral shape when viewed in the Z-axis direction. The resistance heating element 50 is formed of, for example, a conductive material such as tungsten or molybdenum.

また、図２および図３に示すように、保持部材１０には、一対の受電電極５３が配置されている。各受電電極５３は、例えば、Ｚ軸方向視で略円形の板状部材である。各受電電極５３は、例えば、タングステンやモリブデン等の金属により形成されている。受電電極５３は、特許請求の範囲における電極に相当する。 As shown in FIGS. 2 and 3, the holding member 10 is provided with a pair of power receiving electrodes 53. Each power receiving electrode 53 is, for example, a substantially circular plate-like member as viewed in the Z-axis direction. Each power receiving electrode 53 is formed of a metal such as tungsten or molybdenum, for example. The power receiving electrode 53 corresponds to the electrode in the claims.

一対の受電電極５３の内の一方は、保持部材１０の裏面Ｓ２に形成された一対の凹部１２の内の一方の底面に露出しており、かつ、略螺旋状パターンを構成する抵抗発熱体５０の一端付近の下面に接触することによって抵抗発熱体５０と電気的に接続されている。また、一対の受電電極５３の内の他方は、保持部材１０の裏面Ｓ２に形成された一対の凹部１２の内の他方の底面に露出しており、かつ、抵抗発熱体５０の他端付近の下面に接触することによって抵抗発熱体５０と電気的に接続されている。 One of the pair of power receiving electrodes 53 is exposed on one bottom surface of the pair of recesses 12 formed on the back surface S2 of the holding member 10 and forms a substantially spiral pattern. Is electrically connected to the resistance heating element 50 by contacting the lower surface in the vicinity of one end thereof. The other of the pair of power receiving electrodes 53 is exposed on the other bottom surface of the pair of recesses 12 formed on the back surface S 2 of the holding member 10, and near the other end of the resistance heating element 50. It is electrically connected to the resistance heating element 50 by contacting the lower surface.

また、図２および図３に示すように、支持部材２０に形成された貫通孔２２内には、一対の端子部材７０が収容されている。各端子部材７０は、略円柱状の部材である。各端子部材７０は、例えば、ニッケルやチタン等の導電性材料により形成されている。 Further, as shown in FIGS. 2 and 3, a pair of terminal members 70 are accommodated in the through holes 22 formed in the support member 20. Each terminal member 70 is a substantially cylindrical member. Each terminal member 70 is formed of, for example, a conductive material such as nickel or titanium.

一対の端子部材７０の内の一方における上端部分は、保持部材１０の裏面Ｓ２に形成された一対の凹部１２の内の一方に収容されており、該凹部１２の底面に露出した受電電極５３と、ろう付け部５６によって接合されている。また、一対の端子部材７０の内の他方における上端部分は、保持部材１０の裏面Ｓ２に形成された一対の凹部１２の内の他方に収容されており、該凹部１２の底面に露出した受電電極５３と、ろう付け部５６によって接合されている。各ろう付け部５６は、例えば、Ｎｉ合金（Ｎｉ−Ｃｒ系合金等）、Ａｕ合金（Ａｕ−Ｎｉ系合金等）、純Ａｕといった金属ろう材を用いて形成されている。端子部材７０と受電電極５３との接合箇所付近の構成については、後に詳述する。 The upper end portion of one of the pair of terminal members 70 is housed in one of the pair of recesses 12 formed on the back surface S2 of the holding member 10, and the power receiving electrode 53 exposed on the bottom surface of the recess 12 Are joined by a brazing portion 56. The upper end portion of the other of the pair of terminal members 70 is accommodated in the other of the pair of recesses 12 formed on the back surface S 2 of the holding member 10, and the power receiving electrode exposed on the bottom surface of the recess 12. 53 and a brazed portion 56. Each brazing portion 56 is formed using a metal brazing material such as a Ni alloy (Ni—Cr alloy, etc.), an Au alloy (Au—Ni alloy, etc.), or pure Au, for example. The configuration near the junction between the terminal member 70 and the power receiving electrode 53 will be described in detail later.

このような構成の加熱装置１００において、図示しない電源から各端子部材７０および各受電電極５３を介して抵抗発熱体５０に電圧が印加されると、抵抗発熱体５０が発熱し、これにより、保持部材１０の保持面Ｓ１上に保持された対象物（例えば、半導体ウェハＷ）が所定の温度（例えば、４００〜６５０℃程度）に加熱される。 In the heating apparatus 100 having such a configuration, when a voltage is applied to the resistance heating element 50 from each power source (not shown) via each terminal member 70 and each power receiving electrode 53, the resistance heating element 50 generates heat, and thus is retained. The object (for example, semiconductor wafer W) held on the holding surface S1 of the member 10 is heated to a predetermined temperature (for example, about 400 to 650 ° C.).

Ａ−２．端子部材７０と受電電極５３との接合箇所付近の詳細構成：
上述したように、各端子部材７０の上端部分は、保持部材１０の裏面Ｓ２に形成された各凹部１２内に収容されている。以下、各端子部材７０における凹部１２内に収容された柱状部分を、凹部内部分７１という。上述したように、各端子部材７０の凹部内部分７１は、ろう付け部５６によって受電電極５３に接合されている。端子部材７０の凹部内部分７１は、特許請求の範囲における第１の部分に相当する。 A-2. Detailed configuration near the joint between the terminal member 70 and the power receiving electrode 53:
As described above, the upper end portion of each terminal member 70 is accommodated in each recess 12 formed on the back surface S 2 of the holding member 10. Hereinafter, the columnar portion housed in the recess 12 in each terminal member 70 is referred to as the recess inner portion 71. As described above, the in-recess portion 71 of each terminal member 70 is joined to the power receiving electrode 53 by the brazing portion 56. The in-recess portion 71 of the terminal member 70 corresponds to a first portion in the claims.

図３に示すように、本実施形態では、各端子部材７０の凹部内部分７１は、開口側部分７４と、底面側部分７２と、中間部分７３とから構成されている。開口側部分７４は、保持部材１０の裏面Ｓ２に形成された凹部１２の開口１３に近い柱状部分である。また、底面側部分７２は、開口側部分７４に対して凹部１２の底面側（本実施形態では上側）に位置する柱状部分である。また、中間部分７３は、開口側部分７４と底面側部分７２との間に位置する柱状部分である。底面側部分７２の長さ（Ｚ軸方向における寸法）は、例えば、２ｍｍ以上であることが好ましい。また、中間部分７３の長さ（Ｚ軸方向における寸法）は、例えば、２ｍｍ以上であることが好ましい。 As shown in FIG. 3, in the present embodiment, the in-recess portion 71 of each terminal member 70 includes an opening-side portion 74, a bottom-side portion 72, and an intermediate portion 73. The opening side portion 74 is a columnar portion close to the opening 13 of the recess 12 formed on the back surface S 2 of the holding member 10. Further, the bottom surface side portion 72 is a columnar portion located on the bottom surface side (upper side in the present embodiment) of the recess 12 with respect to the opening side portion 74. The intermediate portion 73 is a columnar portion positioned between the opening side portion 74 and the bottom surface side portion 72. The length (dimension in the Z-axis direction) of the bottom surface portion 72 is preferably 2 mm or more, for example. Moreover, it is preferable that the length (dimension in the Z-axis direction) of the intermediate portion 73 is, for example, 2 mm or more.

本実施形態では、底面側部分７２の径Ｄ２の最大値は、開口側部分７４の径Ｄ４より小さく、また、中間部分７３の径Ｄ３は、底面側部分７２の径Ｄ２の最小値より小さい。なお、開口側部分７４の径Ｄ４は、例えば、３．５ｍｍ以上、５ｍｍ以下である。また、開口側部分７４の径Ｄ４と底面側部分７２の径Ｄ２の最大値との差は、例えば、０．２ｍｍ以上であることが好ましい。また、底面側部分７２の径Ｄ２の最大値と中間部分７３の径Ｄ３との差は、例えば、０．３ｍｍ以上であることが好ましい。 In the present embodiment, the maximum value of the diameter D2 of the bottom surface portion 72 is smaller than the diameter D4 of the opening portion 74, and the diameter D3 of the intermediate portion 73 is smaller than the minimum value of the diameter D2 of the bottom surface portion 72. The diameter D4 of the opening side portion 74 is, for example, not less than 3.5 mm and not more than 5 mm. The difference between the diameter D4 of the opening side portion 74 and the maximum value of the diameter D2 of the bottom surface side portion 72 is preferably 0.2 mm or more, for example. Further, the difference between the maximum value of the diameter D2 of the bottom side portion 72 and the diameter D3 of the intermediate portion 73 is preferably 0.3 mm or more, for example.

また、図３に示すように、本実施形態では、各端子部材７０の凹部内部分７１を構成する各部分の内、開口側部分７４および中間部分７３の外周面には凹凸が形成されていない。一方、底面側部分７２の外周面には、溝が形成されている。この溝は、互いに独立した複数の溝であってもよいし、螺旋状に延びる１本の溝であってもよい。そのため、端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面（例えば、図３に示す断面）において、底面側部分７２の外周面には、上記中心軸ＣＬ方向に沿って交互に並ぶ複数の凸部７８および複数の凹部７９が形成されている。 Further, as shown in FIG. 3, in the present embodiment, unevenness is not formed on the outer peripheral surfaces of the opening-side portion 74 and the intermediate portion 73 among the portions constituting the recessed portion inner portion 71 of each terminal member 70. . On the other hand, a groove is formed on the outer peripheral surface of the bottom side portion 72. The grooves may be a plurality of independent grooves or a single groove extending in a spiral shape. For this reason, in the cross section including the central axis CL of the in-recessed portion 71 of the terminal member 70 (for example, the cross section shown in FIG. 3), a plurality of the outer circumferential surfaces of the bottom surface side portion 72 The convex part 78 and the several recessed part 79 are formed.

また、図３に示すように、本実施形態では、各端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面（例えば、図３に示す断面）において、底面側部分７２の外周面に形成された少なくとも１つの凹部７９内に、ろう付け部５６の一部分が収容されている。図３に示す例では、底面側部分７２の外周面に形成された複数の凹部７９の内、受電電極５３側（上側）に位置する２つの凹部７９内に、ろう付け部５６の一部分が収容されている。 As shown in FIG. 3, in the present embodiment, the terminal member 70 is formed on the outer peripheral surface of the bottom surface side portion 72 in the cross section including the central axis CL of the recessed portion inner portion 71 (for example, the cross section shown in FIG. 3). A part of the brazing portion 56 is accommodated in the at least one recessed portion 79 formed. In the example shown in FIG. 3, a part of the brazing portion 56 is accommodated in two recesses 79 located on the power receiving electrode 53 side (upper side) among the plurality of recesses 79 formed on the outer peripheral surface of the bottom surface portion 72. Has been.

Ａ−３．加熱装置１００の製造方法：
本実施形態の加熱装置１００の製造方法は、例えば以下の通りである。はじめに、保持部材１０と支持部材２０とを作製する。 A-3. Manufacturing method of heating device 100:
The manufacturing method of the heating apparatus 100 of this embodiment is as follows, for example. First, the holding member 10 and the support member 20 are produced.

保持部材１０は、例えば、窒化アルミニウム粉末に、必要に応じて適量の酸化イットリウム粉末が添加された混合原料粉末を成形した成形体を、ホットプレス焼成することにより作製することができる。なお、保持部材１０の内部に抵抗発熱体５０を形成するために、例えば、メッシュ金属や金属箔からなる抵抗発熱体５０、または、抵抗発熱体５０の材料である金属粉末が、上記混合原料粉末に挟み込まれる。同様に、保持部材１０に受電電極５３を形成するために、例えば、金属板からなる受電電極５３、または、受電電極５３の材料である金属粉末が、抵抗発熱体５０に接続された状態で上記混合原料粉末に挟み込まれる。この状態で全体をホットプレス焼成することにより、抵抗発熱体５０と受電電極５３とが配置された保持部材１０を作製することができる。 The holding member 10 can be produced by, for example, hot pressing firing a molded body obtained by molding a mixed raw material powder in which an appropriate amount of yttrium oxide powder is added to aluminum nitride powder as necessary. In order to form the resistance heating element 50 inside the holding member 10, for example, the resistance heating element 50 made of mesh metal or metal foil, or the metal powder that is the material of the resistance heating element 50 is the mixed raw material powder. Sandwiched between. Similarly, in order to form the power receiving electrode 53 on the holding member 10, for example, the power receiving electrode 53 made of a metal plate or the metal powder that is the material of the power receiving electrode 53 is connected to the resistance heating element 50. It is sandwiched between mixed raw material powders. In this state, the holding member 10 in which the resistance heating element 50 and the power receiving electrode 53 are arranged can be manufactured by performing hot press firing on the whole.

また、保持部材１０の裏面Ｓ２の凹部１２は、例えば、上述したホットプレス焼成後に、研削工具を用いた研削加工を行うことにより形成される。この研削加工は、受電電極５３が露出するまで行われる。なお、受電電極５３の厚さを抵抗発熱体５０より厚くして、凹部１２の形成のための研削加工の際に研削工具によって多少研削されても、受電電極５３に割れなどの破損が生じないようにすることが好ましい。 Moreover, the recessed part 12 of back surface S2 of the holding member 10 is formed by performing the grinding process using a grinding tool after the hot press baking mentioned above, for example. This grinding process is performed until the power receiving electrode 53 is exposed. Even if the power receiving electrode 53 is thicker than the resistance heating element 50 and is ground to some extent by a grinding tool during the grinding process for forming the recess 12, the power receiving electrode 53 is not broken or broken. It is preferable to do so.

また、支持部材２０は、例えば、窒化アルミニウム粉末に、必要に応じて適量の酸化イットリウム粉末、バインダ、分散剤および可塑剤を加えた混合物にメタノール等の有機溶剤を加え、ボールミルにて混合してスラリーを得、このスラリーをスプレードライヤーにて顆粒化することによって原料粉末を作製し、該原料粉末をゴム型に充填して冷間静水圧プレスを行うことにより成形体を得、得られた成形体を脱脂した後で焼成することにより作製することができる。 The support member 20 is, for example, added an organic solvent such as methanol to a mixture obtained by adding an appropriate amount of yttrium oxide powder, a binder, a dispersant, and a plasticizer to an aluminum nitride powder as necessary, and then mixing them with a ball mill. A slurry is obtained, and the slurry is granulated with a spray dryer to prepare a raw material powder. The raw material powder is filled in a rubber mold and subjected to cold isostatic pressing to obtain a molded body, and the obtained molding It can be produced by baking after degreasing the body.

次に、保持部材１０と支持部材２０とを接合する。保持部材１０の裏面Ｓ２および支持部材２０の上面Ｓ３に対して必要によりラッピング加工を行った後、保持部材１０の裏面Ｓ２と支持部材２０の上面Ｓ３との少なくとも一方に、例えば希土類や有機溶剤等を混合してペースト状にした公知の接合剤を均一に塗布した後、脱脂処理する。次いで、保持部材１０の裏面Ｓ２と支持部材２０の上面Ｓ３とを重ね合わせ、荷重を掛けながら常圧焼成を行うことにより、保持部材１０と支持部材２０とを接合する接合部３０を形成する。 Next, the holding member 10 and the support member 20 are joined. After performing lapping processing on the back surface S2 of the holding member 10 and the upper surface S3 of the support member 20 as necessary, at least one of the back surface S2 of the holding member 10 and the upper surface S3 of the support member 20 is, for example, a rare earth or an organic solvent. A known bonding agent made into a paste by mixing is uniformly applied and then degreased. Subsequently, the back surface S2 of the holding member 10 and the upper surface S3 of the support member 20 are overlapped and subjected to normal pressure firing while applying a load, thereby forming the joint portion 30 that joins the holding member 10 and the support member 20 together.

次に、支持部材２０の貫通孔２２内に端子部材７０を挿入し、端子部材７０の上端部分（凹部内部分７１の底面側部分７２）を受電電極５３にろう付けして、ろう付け部５６を形成する。以上の製造方法により、上述した構成の加熱装置１００が製造される。 Next, the terminal member 70 is inserted into the through hole 22 of the support member 20, the upper end portion of the terminal member 70 (the bottom surface side portion 72 of the recessed portion inner portion 71) is brazed to the power receiving electrode 53, and the brazed portion 56. Form. With the above manufacturing method, the heating device 100 having the above-described configuration is manufactured.

Ａ−４．本実施形態の効果：
以上説明したように、本実施形態の加熱装置１００は、凹部１２が形成された保持部材１０と、凹部１２の底面に露出した受電電極５３と、凹部１２内に収容された柱状の凹部内部分７１を有する金属製の端子部材７０と、受電電極５３と端子部材７０の凹部内部分７１とを接合するろう付け部５６とを備える。また、本実施形態の加熱装置１００では、端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面（例えば、図３に示す断面）において、凹部内部分７１の外周面（より詳細には、凹部内部分７１の底面側部分７２の外周面）に、中心軸ＣＬ方向に沿って交互に並ぶ複数の凸部７８および複数の凹部７９が形成されている。本実施形態の加熱装置１００は、このような構成であるため、以下に詳述するように、端子部材７０と受電電極５３との間の接合強度が低下することを抑制しつつ、ろう付け部５６における残留応力を効果的に低減することができ、該残留応力に起因する保持部材１０のクラックの発生を効果的に抑制することができる。 A-4. Effects of this embodiment:
As described above, the heating device 100 according to this embodiment includes the holding member 10 in which the recess 12 is formed, the power receiving electrode 53 exposed on the bottom surface of the recess 12, and the columnar recess inner portion accommodated in the recess 12. The metal terminal member 70 having 71 and a brazing portion 56 for joining the power receiving electrode 53 and the in-recessed portion 71 of the terminal member 70 are provided. Further, in the heating device 100 of the present embodiment, in the cross section (for example, the cross section shown in FIG. 3) including the central axis CL of the recess inner portion 71 of the terminal member 70, the outer peripheral surface of the recess inner portion 71 (more specifically, A plurality of convex portions 78 and a plurality of concave portions 79 arranged alternately along the direction of the central axis CL are formed on the outer peripheral surface of the bottom surface side portion 72 of the concave portion inner portion 71. Since the heating device 100 according to the present embodiment has such a configuration, as described in detail below, the brazing portion suppresses a decrease in the bonding strength between the terminal member 70 and the power receiving electrode 53. The residual stress at 56 can be effectively reduced, and the occurrence of cracks in the holding member 10 due to the residual stress can be effectively suppressed.

図４は、本実施形態の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の構成を示す説明図である。図４のＡ欄には、端子部材７０と受電電極５３とをろう付けにより接合する際のろう材の量が適正であった場合の構成が示されており、図４のＢ欄には、上記ろう材の量が適正量より僅かに多かった場合の構成が示されており、図４のＣ欄には、上記ろう材の量が適正量より大幅に多かった場合の構成が示されている。 FIG. 4 is an explanatory diagram illustrating a configuration in the vicinity of a joint portion between the terminal member 70 and the power receiving electrode 53 in the heating apparatus 100 according to the present embodiment. The column A in FIG. 4 shows a configuration when the amount of the brazing material when the terminal member 70 and the power receiving electrode 53 are joined by brazing is appropriate, and the column B in FIG. The configuration in the case where the amount of the brazing material is slightly larger than the appropriate amount is shown, and the column C in FIG. 4 shows the configuration in the case where the amount of the brazing material is significantly larger than the appropriate amount. Yes.

また、図５は、比較例の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の構成を示す説明図である。図４と同様に、図５のＡ欄には、端子部材７０と受電電極５３とをろう付けにより接合する際のろう材の量が適正であった場合の構成が示されており、図５のＢ欄には、上記ろう材の量が適正量より僅かに多かった場合の構成が示されており、図５のＣ欄には、上記ろう材の量が適正量より大幅に多かった場合の構成が示されている。図５に示す比較例の加熱装置１００は、端子部材７０における凹部内部分７１（凹部１２内に収容された部分）が、開口側部分７４と底面側部分７２とから構成されており、かつ、凹部内部分７１の外周面に凸部７８や凹部７９が形成されていない点が、第１実施形態の加熱装置１００とは異なる。 FIG. 5 is an explanatory diagram showing a configuration in the vicinity of a joint portion between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the comparative example. Similar to FIG. 4, the column A in FIG. 5 shows a configuration in which the amount of brazing material when joining the terminal member 70 and the power receiving electrode 53 by brazing is appropriate. In the column B, the configuration when the amount of the brazing material is slightly larger than the appropriate amount is shown, and in the column C of FIG. 5, the amount of the brazing material is significantly larger than the appropriate amount. The configuration of is shown. In the heating device 100 of the comparative example shown in FIG. 5, the in-recessed portion 71 (portion accommodated in the recessed portion 12) of the terminal member 70 includes an opening-side portion 74 and a bottom-side portion 72, and The point which the convex part 78 and the recessed part 79 are not formed in the outer peripheral surface of the recessed part inner part 71 differs from the heating apparatus 100 of 1st Embodiment.

ここで、端子部材７０と受電電極５３とのろう付け接合の際には、ろう材不足による接合強度の低下を回避するために、ろう材の適正量として、両部材の接合面間の領域を充填できる量より多めの量が設定される。そのため、端子部材７０と受電電極５３とのろう付け接合の際には、ろう材が、両部材の接合面間の領域より外周側に流れ出て、この流れ出たろう材が表面張力によって両部材の表面に沿って進み、該表面上に溜まった状態で凝固する。その結果、ろう付け部５６には、両部材の接合面間の領域を外周側から取り囲むフィレットＦが形成される。ろう材は冷却固化する際に収縮するため、フィレットＦの形状が適切ではないと、具体的には、受電電極５３の表面とフィレットＦの傾斜面とのなす角（以下、「特定角θ」という）が大きいと、ろう付け部５６における残留応力が大きくなる。ろう付け部５６における残留応力は、保持部材１０のクラック発生の原因となるため、小さい方が好ましい。 Here, in the case of brazing and joining the terminal member 70 and the power receiving electrode 53, in order to avoid a reduction in joining strength due to lack of brazing material, an area between the joining surfaces of both members is set as an appropriate amount of brazing material. A larger amount than the amount that can be filled is set. Therefore, when the terminal member 70 and the power receiving electrode 53 are joined by brazing, the brazing material flows out to the outer peripheral side from the region between the joining surfaces of the two members, and the brazing material that has flowed out is surfaced by the surface tension. And solidify in a state of being accumulated on the surface. As a result, a fillet F that surrounds the region between the joint surfaces of both members from the outer peripheral side is formed in the brazing portion 56. Since the brazing material shrinks when cooled and solidified, the shape of the fillet F is not appropriate. Specifically, the angle formed by the surface of the power receiving electrode 53 and the inclined surface of the fillet F (hereinafter referred to as “specific angle θ”). Is large, the residual stress in the brazed portion 56 increases. Since the residual stress in the brazing portion 56 causes cracks in the holding member 10, it is preferable that the residual stress be small.

図５に示す比較例の加熱装置１００では、端子部材７０の凹部内部分７１の外周面に、凸部７８や凹部７９が形成されていないため、端子部材７０の凹部内部分７１の表面積が比較的小さい。すなわち、端子部材７０の凹部内部分７１の外周面は、あまり多くのろう材を保持（収容）することができない。そのため、端子部材７０と受電電極５３とのろう付け接合の際に、ろう材が端子部材７０の凹部内部分７１の外周面に沿って比較的長い距離を移動し、その結果、フィレットＦの特定角θが比較的大きくなって、ろう付け部５６における残留応力が比較大きくなる。従って、比較例の加熱装置１００では、ろう付け部５６における残留応力に起因して保持部材１０にクラックが発生するおそれがある。特に、図５のＢ欄やＣ欄に示すように、ろう材の量が適正量より多かった場合に、フィレットＦの特定角θが非常に大きくなり、ろう付け部５６における残留応力に起因して保持部材１０にクラックが発生するおそれが高くなる。 In the heating device 100 of the comparative example shown in FIG. 5, since the convex portion 78 and the concave portion 79 are not formed on the outer peripheral surface of the concave portion inner portion 71 of the terminal member 70, the surface area of the concave portion inner portion 71 of the terminal member 70 is compared. Small. That is, the outer peripheral surface of the recessed portion inner portion 71 of the terminal member 70 cannot hold (accommodate) too much brazing material. Therefore, when the terminal member 70 and the power receiving electrode 53 are brazed and joined, the brazing material moves a relatively long distance along the outer peripheral surface of the recessed portion inner portion 71 of the terminal member 70, and as a result, the fillet F is specified. As the angle θ becomes relatively large, the residual stress at the brazed portion 56 becomes relatively large. Therefore, in the heating device 100 of the comparative example, there is a possibility that a crack is generated in the holding member 10 due to the residual stress in the brazing portion 56. In particular, as shown in columns B and C of FIG. 5, when the amount of brazing material is larger than the appropriate amount, the specific angle θ of the fillet F becomes very large, which is caused by residual stress in the brazing portion 56. As a result, the risk of cracks occurring in the holding member 10 increases.

これに対し、本実施形態の加熱装置１００では、端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面（例えば、図３に示す断面）において、凹部内部分７１の外周面に、中心軸ＣＬ方向に沿って交互に並ぶ複数の凸部７８および複数の凹部７９が形成されているため、端子部材７０の凹部内部分７１の表面積が比較的大きい。すなわち、端子部材７０の凹部内部分７１の外周面は、比較的多くのろう材を保持する（収容する）ことができる。そのため、端子部材７０と受電電極５３とのろう付け接合の際に、ろう材が端子部材７０の外周面に沿って比較的長い距離を移動することを回避することができ、その結果、フィレットＦの特定角θが比較的小さくなって、ろう付け部５６における残留応力が比較小さくなる。なお、図４のＢ欄やＣ欄に示すように、ろう材の量が適正量より多い場合であっても、端子部材７０の凹部内部分７１の外周面が過剰なろう材を保持することによって、ろう材が端子部材７０の外周面に沿って比較的長い距離を移動することを回避することができ、フィレットＦの形状を適正に保つことができる。従って、本実施形態の加熱装置１００によれば、ろう付け部５６における残留応力を効果的に低減することができ、ろう付け部５６における残留応力に起因して保持部材１０にクラックが発生することを効果的に抑制することができる。 On the other hand, in the heating device 100 of the present embodiment, in the cross section including the central axis CL of the concave portion inner portion 71 of the terminal member 70 (for example, the cross section shown in FIG. 3), the central axis Since the plurality of convex portions 78 and the plurality of concave portions 79 arranged alternately along the CL direction are formed, the surface area of the concave portion inner portion 71 of the terminal member 70 is relatively large. That is, the outer peripheral surface of the recessed portion inner portion 71 of the terminal member 70 can hold (accommodate) a relatively large amount of brazing material. Therefore, it is possible to prevent the brazing material from moving a relatively long distance along the outer peripheral surface of the terminal member 70 when the terminal member 70 and the power receiving electrode 53 are brazed. As a result, the fillet F The specific angle θ becomes relatively small, and the residual stress in the brazed portion 56 becomes comparatively small. In addition, as shown in B column or C column of FIG. 4, even if the amount of the brazing material is larger than the appropriate amount, the outer peripheral surface of the recessed portion inner portion 71 of the terminal member 70 holds the excessive brazing material. Thus, it is possible to avoid the brazing material from moving a relatively long distance along the outer peripheral surface of the terminal member 70, and the shape of the fillet F can be maintained appropriately. Therefore, according to the heating device 100 of the present embodiment, the residual stress in the brazed part 56 can be effectively reduced, and a crack is generated in the holding member 10 due to the residual stress in the brazed part 56. Can be effectively suppressed.

また、本実施形態の加熱装置１００によれば、端子部材７０の凹部内部分７１の表面積を比較的大きくすることができるため、過剰なろう材が保持部材１０の凹部１２の側面と端子部材７０の開口側部分７４との間の隙間に進入して（這い上がって）両者が接合されることを抑制することができ、保持部材１０と端子部材７０との間の熱膨張差に起因してクラックが発生することを抑制することができる。 Further, according to the heating device 100 of the present embodiment, the surface area of the in-recessed portion 71 of the terminal member 70 can be made relatively large, so that excessive brazing material is present on the side surface of the recessed portion 12 of the holding member 10 and the terminal member 70. It is possible to prevent the two members from joining (climbing up) into the gap between the opening side portion 74 and joining them together, and due to the difference in thermal expansion between the holding member 10 and the terminal member 70 The occurrence of cracks can be suppressed.

また、本実施形態の加熱装置１００では、端子部材７０の凹部内部分７１は、柱状の開口側部分７４と、開口側部分７４に対して凹部１２の底面側に位置し、開口側部分７４より径の小さい柱状の底面側部分７２とを有し、端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面において、複数の凸部７８および複数の凹部７９は底面側部分７２の外周面に形成されている。そのため、本実施形態の加熱装置１００によれば、保持部材１０に形成された凹部１２の側面と端子部材７０の凹部内部分７１との間に大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が端子部材７０の外周面に沿って比較的長い距離を移動することを回避することができ、ろう付け部５６のフィレットＦを適正な形状とすることができ、ろう付け部５６における残留応力に起因して保持部材１０にクラックが発生することを効果的に抑制することができる。また、本実施形態の加熱装置１００によれば、保持部材１０に形成された凹部１２の側面と端子部材７０の凹部内部分７１との間に大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が保持部材１０の凹部１２の側面と端子部材７０の開口側部分７４との間の隙間に進入して（這い上がって）両者が接合されることを効果的に抑制することができ、保持部材１０と端子部材７０との間の熱膨張差に起因してクラックが発生することを効果的に抑制することができる。 Further, in the heating device 100 of the present embodiment, the recessed portion inner portion 71 of the terminal member 70 is positioned on the bottom side of the recessed portion 12 with respect to the columnar opening side portion 74 and the opening side portion 74, and from the opening side portion 74. A plurality of convex portions 78 and a plurality of concave portions 79 on the outer peripheral surface of the bottom surface side portion 72 in a cross section including the central axis CL of the concave portion inner portion 71 of the terminal member 70. Is formed. Therefore, according to the heating device 100 of the present embodiment, a large space is ensured between the side surface of the recess 12 formed in the holding member 10 and the recess inner portion 71 of the terminal member 70, so that the brazing material is greatly increased. Even if it is excessive, it can be avoided that the brazing material moves a relatively long distance along the outer peripheral surface of the terminal member 70, and the fillet F of the brazing portion 56 can have an appropriate shape, It is possible to effectively suppress the occurrence of cracks in the holding member 10 due to the residual stress in the brazed portion 56. Further, according to the heating device 100 of the present embodiment, a large space is ensured between the side surface of the recess 12 formed in the holding member 10 and the recess inner portion 71 of the terminal member 70, so that the brazing material is greatly increased. Even if it is excessive, it is effective that the brazing material enters (crawls up) into the gap between the side surface of the concave portion 12 of the holding member 10 and the opening side portion 74 of the terminal member 70 and joins them together. It can suppress, and it can suppress effectively that a crack generate | occur | produces due to the thermal expansion difference between the holding member 10 and the terminal member 70. FIG.

また、本実施形態の加熱装置１００では、端子部材７０の凹部内部分７１が、開口側部分７４と底面側部分７２との間に位置し、底面側部分７２の最小径より径の小さい柱状の中間部分７３を有する。そのため、本実施形態の加熱装置１００によれば、保持部材１０に形成された凹部１２の側面と端子部材７０の凹部内部分７１との間にさらに大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が端子部材７０の外周面に沿って比較的長い距離を移動することを回避することができ、ろう付け部５６のフィレットＦを適正な形状とすることができ、ろう付け部５６における残留応力に起因して保持部材１０にクラックが発生することを極めて効果的に抑制することができる。また、本実施形態の加熱装置１００によれば、保持部材１０に形成された凹部１２の側面と端子部材７０の凹部内部分７１との間にさらに大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が保持部材１０の凹部１２の側面と端子部材７０の開口側部分７４との間の隙間に進入して（這い上がって）両者が接合されることを極めて効果的に抑制することができ、保持部材１０と端子部材７０との間の熱膨張差に起因してクラックが発生することを極めて効果的に抑制することができる。 Further, in the heating device 100 of the present embodiment, the in-recessed portion 71 of the terminal member 70 is located between the opening-side portion 74 and the bottom-side portion 72 and has a columnar shape whose diameter is smaller than the minimum diameter of the bottom-side portion 72. It has an intermediate portion 73. Therefore, according to the heating device 100 of the present embodiment, since a larger space is secured between the side surface of the recess 12 formed in the holding member 10 and the recess inner portion 71 of the terminal member 70, the brazing material is greatly increased. Even if it is excessive, it can be avoided that the brazing material moves a relatively long distance along the outer peripheral surface of the terminal member 70, and the fillet F of the brazing portion 56 can have an appropriate shape. The occurrence of cracks in the holding member 10 due to residual stress in the brazing portion 56 can be extremely effectively suppressed. Further, according to the heating device 100 of the present embodiment, since a larger space is secured between the side surface of the recess 12 formed in the holding member 10 and the recess inner portion 71 of the terminal member 70, the brazing material is greatly increased. Even if it is excessive, the brazing material enters the gap between the side surface of the concave portion 12 of the holding member 10 and the opening side portion 74 of the terminal member 70 (climbs up), and it is extremely effective that both are joined. Therefore, it is possible to very effectively suppress the occurrence of cracks due to the difference in thermal expansion between the holding member 10 and the terminal member 70.

また、本実施形態の加熱装置１００では、端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面において、凹部内部分７１の外周面に形成された少なくとも１つの凹部７９内に、ろう付け部５６の一部分が収容されている。この構成は、端子部材７０と受電電極５３とのろう付け接合の際のろう材の量が、両部材の接合面間の領域を充填できる量より多めに設定されており、かつ、過剰なろう材が端子部材７０の凹部内部分７１の外周面に形成された凹部７９内に適切に収容されていることを意味する。そのため、本実施形態の加熱装置１００によれば、ろう材が不足して端子部材７０と受電電極５３との間の接合強度が低下することを抑制しつつ、ろう付け部５６における残留応力や保持部材１０と端子部材７０との間の熱膨張差に起因してクラックが発生することを抑制することができる。 Further, in the heating device 100 of the present embodiment, the brazing portion is disposed in at least one recess 79 formed on the outer peripheral surface of the recess inner portion 71 in the cross section including the central axis CL of the recess inner portion 71 of the terminal member 70. A portion of 56 is housed. In this configuration, the amount of brazing material in brazing and joining the terminal member 70 and the power receiving electrode 53 is set to be larger than the amount capable of filling the region between the joining surfaces of both members, and excessive brazing. This means that the material is appropriately accommodated in the recess 79 formed on the outer peripheral surface of the recess inner portion 71 of the terminal member 70. Therefore, according to the heating device 100 of the present embodiment, the residual stress and the retention in the brazing portion 56 are suppressed while suppressing the brazing material from being insufficient and the bonding strength between the terminal member 70 and the power receiving electrode 53 from being lowered. The occurrence of cracks due to the difference in thermal expansion between the member 10 and the terminal member 70 can be suppressed.

Ｂ．第２実施形態：
図６は、第２実施形態の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の詳細構成を示す説明図である。図６には、図３に示された第１実施形態の加熱装置１００のＸＺ断面構成に対応する第２実施形態の加熱装置１００のＸＺ断面構成が示されている。以下では、第２実施形態の加熱装置１００の構成の内、上述した第１実施形態の加熱装置１００の構成と同一の構成については、同一の符号を付すことによってその説明を適宜省略する。 B. Second embodiment:
FIG. 6 is an explanatory diagram illustrating a detailed configuration near the joint portion between the terminal member 70 and the power receiving electrode 53 in the heating apparatus 100 according to the second embodiment. FIG. 6 shows an XZ cross-sectional configuration of the heating device 100 of the second embodiment corresponding to the XZ cross-sectional configuration of the heating device 100 of the first embodiment shown in FIG. 3. Below, about the structure same as the structure of the heating apparatus 100 of 1st Embodiment mentioned above among the structures of the heating apparatus 100 of 2nd Embodiment, the description is abbreviate | omitted suitably by attaching | subjecting the same code | symbol.

図６に示すように、第２実施形態の加熱装置１００は、主として、端子部材７０の凹部内部分７１を構成する底面側部分７２ａの構成が、第１実施形態の加熱装置１００と異なっている。具体的には、第２実施形態の加熱装置１００では、底面側部分７２ａは、端子部材７０の外周面にワイヤ７５が巻き付けられて固定された構成を有している。このワイヤ７５は、互いに独立した複数のワイヤであってもよいし、略螺旋状に延びる１本のワイヤであってもよい。そのため、端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面（例えば、図６に示す断面）において、凹部内部分７１の底面側部分７２ａの外周面には、上記中心軸ＣＬ方向に沿って交互に並ぶ複数の凸部７８（すなわち、ワイヤ７５が存在する部分）および複数の凹部７９（すなわち、ワイヤ７５が存在しない部分）が形成されている。 As shown in FIG. 6, the heating device 100 of the second embodiment mainly differs from the heating device 100 of the first embodiment in the configuration of the bottom surface side portion 72 a that constitutes the recessed portion portion 71 of the terminal member 70. . Specifically, in the heating apparatus 100 according to the second embodiment, the bottom surface portion 72 a has a configuration in which a wire 75 is wound around and fixed to the outer peripheral surface of the terminal member 70. The wires 75 may be a plurality of wires independent from each other, or may be a single wire extending in a substantially spiral shape. Therefore, in a cross section (for example, the cross section shown in FIG. 6) including the central axis CL of the recess inner portion 71 of the terminal member 70, the outer peripheral surface of the bottom surface portion 72 a of the recess inner portion 71 extends along the direction of the central axis CL. A plurality of convex portions 78 (that is, a portion where the wire 75 exists) and a plurality of concave portions 79 (that is, a portion where the wire 75 does not exist) are formed alternately.

このように、第２実施形態の加熱装置１００では、上述した第１実施形態の加熱装置１００と同様に、端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面において、凹部内部分７１の外周面（より詳細には、凹部内部分７１の底面側部分７２ａの外周面）に、中心軸ＣＬ方向に沿って交互に並ぶ複数の凸部７８および複数の凹部７９が形成されている。そのため、第２実施形態の加熱装置１００によれば、上述した第１実施形態の加熱装置１００と同様に、端子部材７０と受電電極５３との間の接合強度が低下することを抑制しつつ、ろう付け部５６における残留応力を効果的に低減することができ、該残留応力に起因する保持部材１０のクラックの発生を効果的に抑制することができる。 As described above, in the heating device 100 according to the second embodiment, in the cross section including the central axis CL of the recess inner portion 71 of the terminal member 70, as in the heating device 100 according to the first embodiment described above, A plurality of convex portions 78 and a plurality of concave portions 79 arranged alternately along the direction of the central axis CL are formed on the outer peripheral surface (more specifically, the outer peripheral surface of the bottom surface portion 72a of the concave portion inner portion 71). Therefore, according to the heating device 100 of the second embodiment, similarly to the heating device 100 of the first embodiment described above, while suppressing the decrease in the bonding strength between the terminal member 70 and the power receiving electrode 53, Residual stress in the brazed portion 56 can be effectively reduced, and generation of cracks in the holding member 10 due to the residual stress can be effectively suppressed.

Ｃ．第３実施形態：
図７は、第３実施形態の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の詳細構成を示す説明図である。図７には、図３に示された第１実施形態の加熱装置１００のＸＺ断面構成に対応する第２実施形態の加熱装置１００のＸＺ断面構成が示されている。以下では、第３実施形態の加熱装置１００の構成の内、上述した第１実施形態の加熱装置１００の構成と同一の構成については、同一の符号を付すことによってその説明を適宜省略する。 C. Third embodiment:
FIG. 7 is an explanatory diagram illustrating a detailed configuration in the vicinity of a joint portion between the terminal member 70 and the power receiving electrode 53 in the heating apparatus 100 according to the third embodiment. FIG. 7 shows an XZ cross-sectional configuration of the heating device 100 of the second embodiment corresponding to the XZ cross-sectional configuration of the heating device 100 of the first embodiment shown in FIG. 3. Below, about the structure same as the structure of the heating apparatus 100 of 1st Embodiment mentioned above among the structures of the heating apparatus 100 of 3rd Embodiment, the description is abbreviate | omitted suitably by attaching | subjecting the same code | symbol.

図７に示すように、第３実施形態の加熱装置１００は、主として、端子部材７０の凹部内部分７１ｂの構成が、第１実施形態の加熱装置１００と異なっている。具体的には、第３実施形態の加熱装置１００では、端子部材７０の凹部内部分７１ｂが、開口側部分７４と底面側部分７２ｂから構成されている。第３実施形態では、底面側部分７２ｂの径Ｄ２は、開口側部分７４の径Ｄ４と略同一である。なお、第３実施形態では、第１実施形態と同様に、底面側部分７２ｂの外周面に溝が形成されており、その結果、端子部材７０の凹部内部分７１ｂの中心軸ＣＬを含む断面（例えば、図７に示す断面）において、底面側部分７２ｂの外周面に、上記中心軸ＣＬ方向に沿って交互に並ぶ複数の凸部７８および複数の凹部７９が形成されている。 As shown in FIG. 7, the heating device 100 according to the third embodiment mainly differs from the heating device 100 according to the first embodiment in the configuration of the in-recess portion 71 b of the terminal member 70. Specifically, in the heating apparatus 100 according to the third embodiment, the in-recess portion 71b of the terminal member 70 is configured by an opening-side portion 74 and a bottom-side portion 72b. In the third embodiment, the diameter D2 of the bottom surface side portion 72b is substantially the same as the diameter D4 of the opening side portion 74. In the third embodiment, as in the first embodiment, a groove is formed on the outer peripheral surface of the bottom surface portion 72b, and as a result, a cross section including the central axis CL of the recessed portion inner portion 71b of the terminal member 70 ( For example, in the cross section shown in FIG. 7, a plurality of convex portions 78 and a plurality of concave portions 79 that are alternately arranged along the direction of the central axis CL are formed on the outer peripheral surface of the bottom surface side portion 72 b.

このように、第３実施形態の加熱装置１００では、上述した第１実施形態の加熱装置１００と同様に、端子部材７０の凹部内部分７１ｂの中心軸ＣＬを含む断面において、凹部内部分７１ｂの外周面（より詳細には、凹部内部分７１ｂの底面側部分７２ｂの外周面）に、中心軸ＣＬ方向に沿って交互に並ぶ複数の凸部７８および複数の凹部７９が形成されている。そのため、第３実施形態の加熱装置１００によれば、上述した第１実施形態の加熱装置１００と同様に、端子部材７０と受電電極５３との間の接合強度が低下することを抑制しつつ、ろう付け部５６における残留応力を効果的に低減することができ、該残留応力に起因する保持部材１０のクラックの発生を効果的に抑制することができる。 Thus, in the heating device 100 of the third embodiment, similarly to the heating device 100 of the first embodiment described above, in the cross section including the central axis CL of the recess inner portion 71b of the terminal member 70, the recess inner portion 71b A plurality of convex portions 78 and a plurality of concave portions 79 arranged alternately along the direction of the central axis CL are formed on the outer peripheral surface (more specifically, the outer peripheral surface of the bottom surface side portion 72b of the inner portion 71b of the concave portion). Therefore, according to the heating device 100 of the third embodiment, similarly to the heating device 100 of the first embodiment described above, while suppressing the decrease in the bonding strength between the terminal member 70 and the power receiving electrode 53, Residual stress in the brazed portion 56 can be effectively reduced, and generation of cracks in the holding member 10 due to the residual stress can be effectively suppressed.

Ｄ．第４実施形態：
図８は、第４実施形態の加熱装置１００における端子部材７０と受電電極５３との接合箇所付近の詳細構成を示す説明図である。図８には、図３に示された第１実施形態の加熱装置１００のＸＺ断面構成に対応する第４実施形態の加熱装置１００のＸＺ断面構成が示されている。以下では、第４実施形態の加熱装置１００の構成の内、上述した第１実施形態の加熱装置１００の構成と同一の構成については、同一の符号を付すことによってその説明を適宜省略する。 D. Fourth embodiment:
FIG. 8 is an explanatory diagram illustrating a detailed configuration in the vicinity of a joint portion between the terminal member 70 and the power receiving electrode 53 in the heating apparatus 100 according to the fourth embodiment. FIG. 8 shows an XZ cross-sectional configuration of the heating device 100 of the fourth embodiment corresponding to the XZ cross-sectional configuration of the heating device 100 of the first embodiment shown in FIG. 3. Below, about the structure same as the structure of the heating apparatus 100 of 1st Embodiment mentioned above among the structures of the heating apparatus 100 of 4th Embodiment, the description is abbreviate | omitted suitably by attaching | subjecting the same code | symbol.

図８に示すように、第４実施形態の加熱装置１００は、主として、端子部材７０と受電電極５３との間に緩衝部材（第１の緩衝部材８１および第２の緩衝部材８２）が配置されている点が、第１実施形態の加熱装置１００と異なっている。具体的には、第４実施形態の加熱装置１００では、受電電極５３の下側に第１の緩衝部材８１が配置され、第１の緩衝部材８１の下側に第２の緩衝部材８２が配置され、第２の緩衝部材８２の下側に端子部材７０（端子部材７０の底面側部分７２）が配置されている。 As shown in FIG. 8, in the heating device 100 of the fourth embodiment, the buffer members (the first buffer member 81 and the second buffer member 82) are mainly disposed between the terminal member 70 and the power receiving electrode 53. This is different from the heating device 100 of the first embodiment. Specifically, in the heating device 100 of the fourth embodiment, the first buffer member 81 is disposed below the power receiving electrode 53, and the second buffer member 82 is disposed below the first buffer member 81. In addition, the terminal member 70 (the bottom surface portion 72 of the terminal member 70) is disposed below the second buffer member 82.

第１の緩衝部材８１および第２の緩衝部材８２は、Ｚ軸方向視で略円形の板状部材であり、例えば、タングステンやモリブデン、コバール等の金属により形成されている。ただし、第１の緩衝部材８１および第２の緩衝部材８２は、端子部材７０と受電電極５３との熱膨張差を緩和するために配置されるものである。そのため、第１の緩衝部材８１の形成材料としては、受電電極５３の形成材料と同じ材料、または、受電電極５３の熱膨張係数と第２の緩衝部材８２の熱膨張係数との間の熱膨張係数を有する材料が用いられ、また、第２の緩衝部材８２の材料としては、第１の緩衝部材８１の熱膨張係数と端子部材７０の熱膨張係数との間の熱膨張係数を有する材料が用いられる。なお、第４実施形態でも、第１の緩衝部材８１および第２の緩衝部材８２を挟みつつ、端子部材７０と受電電極５３とがろう付け部５６により接合されている。 The first buffer member 81 and the second buffer member 82 are substantially circular plate-like members as viewed in the Z-axis direction, and are formed of, for example, a metal such as tungsten, molybdenum, or kovar. However, the first buffer member 81 and the second buffer member 82 are arranged to alleviate the difference in thermal expansion between the terminal member 70 and the power receiving electrode 53. Therefore, as a material for forming the first buffer member 81, the same material as that for the power receiving electrode 53, or a thermal expansion between the coefficient of thermal expansion of the power receiving electrode 53 and the coefficient of thermal expansion of the second buffer member 82. A material having a coefficient is used, and a material having a thermal expansion coefficient between the thermal expansion coefficient of the first buffer member 81 and the thermal expansion coefficient of the terminal member 70 is used as the material of the second buffer member 82. Used. In the fourth embodiment as well, the terminal member 70 and the power receiving electrode 53 are joined by the brazing portion 56 with the first buffer member 81 and the second buffer member 82 interposed therebetween.

このように、第４実施形態では、端子部材７０と受電電極５３との間に第１の緩衝部材８１および第２の緩衝部材８２が配置されている点が異なるものの、第１実施形態と同様に、端子部材７０の凹部内部分７１を構成する底面側部分７２の外周面に溝が形成されており、その結果、端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面（例えば、図８に示す断面）において、凹部内部分７１の外周面（より詳細には、凹部内部分７１の底面側部分７２の外周面）に、上記中心軸ＣＬ方向に沿って交互に並ぶ複数の凸部７８および複数の凹部７９が形成されている。そのため、第４実施形態の加熱装置１００によれば、上述した第１実施形態の加熱装置１００と同様に、端子部材７０と受電電極５３との間の接合強度が低下することを抑制しつつ、ろう付け部５６における残留応力を効果的に低減することができ、該残留応力に起因する保持部材１０のクラックの発生を効果的に抑制することができる。また、第４実施形態の加熱装置１００によれば、端子部材７０と受電電極５３との熱膨張差に起因して、保持部材１０等にクラックが発生することを抑制することができる。 As described above, the fourth embodiment differs from the first embodiment in that the first buffer member 81 and the second buffer member 82 are arranged between the terminal member 70 and the power receiving electrode 53. In addition, a groove is formed on the outer peripheral surface of the bottom surface side portion 72 constituting the recessed portion inner portion 71 of the terminal member 70, and as a result, a cross section including the central axis CL of the recessed portion inner portion 71 of the terminal member 70 (for example, FIG. 8), a plurality of convex portions alternately arranged along the central axis CL direction on the outer peripheral surface of the inner portion 71 of the concave portion (more specifically, the outer peripheral surface of the bottom surface portion 72 of the inner portion 71 of the concave portion). 78 and a plurality of recesses 79 are formed. Therefore, according to the heating device 100 of the fourth embodiment, similarly to the heating device 100 of the first embodiment described above, while suppressing the decrease in the bonding strength between the terminal member 70 and the power receiving electrode 53, Residual stress in the brazed portion 56 can be effectively reduced, and generation of cracks in the holding member 10 due to the residual stress can be effectively suppressed. Moreover, according to the heating apparatus 100 of 4th Embodiment, it can suppress that a crack generate | occur | produces in the holding member 10 grade | etc., Resulting from the thermal expansion difference of the terminal member 70 and the receiving electrode 53. FIG.

Ｅ．変形例：
本明細書で開示される技術は、上述の実施形態に限られるものではなく、その要旨を逸脱しない範囲において種々の形態に変形することができ、例えば次のような変形も可能である。 E. Variations:
The technology disclosed in the present specification is not limited to the above-described embodiment, and can be modified into various forms without departing from the gist thereof. For example, the following modifications are possible.

上記実施形態における加熱装置１００の構成は、あくまで例示であり、種々変形可能である。例えば、上記実施形態では、抵抗発熱体５０と受電電極５３とが接触することにより電気的に接続されているが、両者が他の導電性部材（例えば、ビア）を介して電気的に接続されているとしてもよい。 The structure of the heating apparatus 100 in the said embodiment is an illustration to the last, and can deform | transform variously. For example, in the above embodiment, the resistance heating element 50 and the power receiving electrode 53 are electrically connected by contact, but both are electrically connected via other conductive members (for example, vias). It may be.

また、上記各実施形態では、各端子部材７０の凹部内部分７１の中心軸ＣＬを含む断面において、底面側部分７２の外周面に形成された少なくとも１つの凹部７９内に、ろう付け部５６の一部分が収容されているとしているが、必ずしも凹部７９内にろう付け部５６の一部分が収容されている必要はない。 Further, in each of the above-described embodiments, the brazing portion 56 is disposed in at least one recess 79 formed on the outer peripheral surface of the bottom surface portion 72 in the cross section including the central axis CL of the recess inner portion 71 of each terminal member 70. Although a part of the brazed portion 56 is not necessarily accommodated in the recess 79, it is not necessarily required to be accommodated.

また、上記第１，２，４実施形態では、端子部材７０の凹部内部分７１が、開口側部分７４と底面側部分７２と中間部分７３とから構成されているが、凹部内部分７１が、開口側部分７４と底面側部分７２とから構成されており、中間部分７３が存在しないとしてもよい。また、上記第１，２，４実施形態では、底面側部分７２の径Ｄ２が開口側部分７４の径Ｄ４より小さいとしているが、底面側部分７２の径Ｄ２が開口側部分７４の径Ｄ４と略同一であるとしてもよい。 In the first, second, and fourth embodiments, the in-recessed portion 71 of the terminal member 70 is composed of the opening-side portion 74, the bottom-side portion 72, and the intermediate portion 73. It is comprised from the opening side part 74 and the bottom face side part 72, and the intermediate part 73 does not need to exist. In the first, second, and fourth embodiments, the diameter D2 of the bottom surface portion 72 is smaller than the diameter D4 of the opening portion 74, but the diameter D2 of the bottom surface portion 72 is equal to the diameter D4 of the opening portion 74. It may be substantially the same.

また、上記実施形態では、各端子部材７０が、１つの部材として構成されているが、各端子部材７０が、上下方向に並ぶと共に、ネジやかしめ等により互いに接続された複数の部材から構成されているとしてもよい。その場合においても、各端子部材７０を構成する複数の部材の内、保持部材１０の凹部１２の底面に露出した受電電極５３と接合される部材が、特許請求の範囲における端子部材に相当する。また、その場合において、各端子部材７０を構成する複数の部材の内、受電電極５３と接合される部材は、その一部分のみが保持部材１０の凹部１２内に収容されていてもよいし、その全体が保持部材１０の凹部１２内に収容されていてもよい。いずれの場合も、保持部材１０の凹部１２内に収容された部分が、特許請求の範囲における第１の部分に相当する。 In the above-described embodiment, each terminal member 70 is configured as one member. However, each terminal member 70 is configured by a plurality of members arranged in the vertical direction and connected to each other by screws, caulking, or the like. It may be. Even in that case, the member joined to the power receiving electrode 53 exposed on the bottom surface of the recess 12 of the holding member 10 among the plurality of members constituting each terminal member 70 corresponds to the terminal member in the claims. In that case, among the members constituting each terminal member 70, only a part of the members joined to the power receiving electrode 53 may be accommodated in the recess 12 of the holding member 10. The entirety may be accommodated in the recess 12 of the holding member 10. In any case, the portion accommodated in the recess 12 of the holding member 10 corresponds to the first portion in the claims.

また、上記実施形態の加熱装置１００を構成する各部材の形状や個数、形成材料等は、あくまで一例であり、種々変形可能である。 Moreover, the shape and number of each member which comprises the heating apparatus 100 of the said embodiment, a forming material, etc. are an example to the last, and can deform | transform variously.

また、上記実施形態における加熱装置１００の製造方法はあくまで一例であり、種々変形可能である。例えば、上記実施形態では、保持部材１０がホットプレス焼成により作製されるとしているが、保持部材１０がセラミックスグリーンシートの積層体を焼成することにより作製されるとしてもよい。 Moreover, the manufacturing method of the heating apparatus 100 in the said embodiment is an example to the last, and can deform | transform variously. For example, in the above embodiment, the holding member 10 is produced by hot press firing, but the holding member 10 may be produced by firing a laminate of ceramic green sheets.

また、上記実施形態では、加熱装置１００が備える抵抗発熱体５０に電気的に接続された受電電極５３と端子部材７０との接合箇所の構成について詳細に説明したが、本明細書に開示された技術は、凹部が形成されたセラミックス部材と、該凹部の底面に露出した電極と、該凹部内に収容された柱状の第１の部分を有する金属製の端子部材と、該電極と該端子部材の第１の部分とを接合するろう付け部とを備える半導体製造装置用部品にも同様に適用することができる。例えば、本明細書に開示された技術は、半導体製造装置用部品である静電チャックを構成するセラミックス部材のチャック電極に電気的に接続された電極と端子部材との接合箇所についても同様に適用可能である。 Moreover, in the said embodiment, although the structure of the junction location of the power receiving electrode 53 and the terminal member 70 which were electrically connected to the resistance heating element 50 with which the heating apparatus 100 was provided was demonstrated in detail, it disclosed by this specification. The technology includes a ceramic member having a recess, an electrode exposed on a bottom surface of the recess, a metal terminal member having a columnar first portion accommodated in the recess, the electrode, and the terminal member. The present invention can be similarly applied to a component for a semiconductor manufacturing apparatus including a brazing portion that joins the first portion. For example, the technology disclosed in the present specification is similarly applied to a joint portion between an electrode electrically connected to a chuck electrode of a ceramic member constituting an electrostatic chuck which is a component for a semiconductor manufacturing apparatus and a terminal member. Is possible.

１０：保持部材１２：凹部１３：開口２０：支持部材２２：貫通孔３０：接合部５０：抵抗発熱体５３：受電電極５６：ろう付け部７０：端子部材７１：凹部内部分７２：底面側部分７３：中間部分７４：開口側部分７５：ワイヤ７８：凸部７９：凹部８１：第１の緩衝部材８２：第２の緩衝部材１００：加熱装置ＣＬ：中心軸Ｆ：フィレットＳ１：保持面Ｓ２：裏面Ｓ３：上面Ｓ４：下面Ｗ：半導体ウェハ DESCRIPTION OF SYMBOLS 10: Holding member 12: Concave 13: Opening 20: Support member 22: Through-hole 30: Joining part 50: Resistance heating element 53: Power receiving electrode 56: Brazing part 70: Terminal member 71: Inner part of recessed part 72: Bottom side part 73: Intermediate part 74: Opening side part 75: Wire 78: Convex part 79: Concave part 81: 1st buffer member 82: 2nd buffer member 100: Heating device CL: Center axis F: Fillet S1: Holding surface S2: Back surface S3: Upper surface S4: Lower surface W: Semiconductor wafer

Claims

A ceramic member having a recess,
An electrode exposed on the bottom surface of the recess;
A metal terminal member having a columnar first portion housed in the recess; and a terminal member;
A brazing part for joining the electrode and the first part of the terminal member;
In semiconductor manufacturing equipment parts comprising:
In the cross section including the central axis of the first portion of the terminal member, a plurality of convex portions and a plurality of concave portions arranged alternately along the central axis direction are formed on the outer peripheral surface of the first portion. ,
A component for semiconductor manufacturing equipment.

The semiconductor manufacturing apparatus component according to claim 1,
The first part of the terminal member includes a columnar opening side part, and a columnar bottom side part positioned on the bottom side of the recess with respect to the opening side part and having a smaller diameter than the opening side part. Have
In the cross section including the central axis of the first portion of the terminal member, the plurality of convex portions and the plurality of concave portions are formed on an outer peripheral surface of the bottom surface side portion of the first portion.
A component for semiconductor manufacturing equipment.

The semiconductor manufacturing apparatus component according to claim 2,
The first portion of the terminal member is positioned between the opening side portion and the bottom surface side portion, and has a columnar intermediate portion having a diameter smaller than the minimum diameter of the bottom surface side portion.
A component for semiconductor manufacturing equipment.

In the semiconductor manufacturing apparatus component according to any one of claims 1 to 3,
In a cross section including the central axis of the first portion of the terminal member, a part of the brazing portion is accommodated in at least one of the concave portions formed on the outer peripheral surface of the first portion.
A component for semiconductor manufacturing equipment.