JP2019135784A - Apparatus and method for joining substrate - Google Patents

Abstract

A method for improving the bonding accuracy at the edge of a substrate is provided.
A method for bonding a first substrate 4o to a second substrate 4u at contact surfaces 4k of the substrates 4o, 4u facing each other, the first substrate 4o being held by a first holding device 1o. And holding the second substrate 4u on the second holding surface 1s of the second holding device 1u, and bending the contact surface 4k before the contact with the contact surface 4k. The bending change of the contact surface 4k of the first substrate 4o and / or the bending change of the contact surface 4k of the second substrate 4u is controlled during bonding.
[Selection] Figure 4c

Description

  The invention relates to a method for bonding a first substrate according to claim 1 to a second substrate, and a corresponding apparatus according to claim 9.

  For several years, in the semiconductor industry, substrates are bonded together by a so-called bonding process. Prior to bonding, the substrates must be aligned with each other as accurately as possible, in which case the nanometer range deviations that occur between them are a problem. In this case, the alignment of the substrate is mainly performed through alignment marks. In addition to the alignment marks, there are further, in particular functional elements on the substrate that must also be aligned with each other during the bonding process. Such alignment accuracy between individual functional elements is required over the entire substrate surface. Therefore, for example, the alignment accuracy is very good at the center of the substrate, but it cannot be said to be sufficient when it decreases toward the edge.

  For example, the literature, European Patent No. 2656378 (EP2656378B 1) or International Publication No. 2014/19133 (WO2014191033A1), the prior art includes a plurality of methods and methods that can be used to influence the joining process and The device is present.

  The biggest problem in bonding is in the bonding process itself, that is, in the initial stage of bonding until the contact surfaces of the substrates come into complete contact with each other. In this case, the mutual alignment of both substrates may still change significantly compared to the previous alignment. Once both substrate surfaces are bonded together, they can theoretically be separated again, but this is costly, has a low throughput and is susceptible to errors.

  An object of the present invention is to provide an apparatus and a method for bonding two substrates, which can increase the bonding accuracy particularly at the edge of the substrate.

  This problem is solved by an apparatus and method with the features of claims 1 and 9. Further preferred configurations of the invention are described in the dependent claims. All combinations of at least two features described in the specification, claims, and / or drawings are within the scope of the invention. In the numerical ranges described, values within the above ranges are also considered disclosed as limit values and can be claimed in any combination.

  The idea underlying the present invention is that both substrates are bent before contact or before bonding, and this bending of at least one of both substrates is preferably melt bonded during bonding, in particular during the course of the bonding wave. At this time, it is changed by controlling the curvature. The curvature of the other (preferably upper) substrate is also preferably controlled and changed.

  The curvature is also changed by the automatic contact of the substrate. The automatic contact is made in particular by gravity acting on the substrates and / or other attractive forces between the substrates. The control of the curvature change of one (especially the lower side) substrate, as well as the curvature change of the other (especially the upper side) substrate, preferably depends on the curvature change (preferably by measurement and control). Done.

  The curvature change means in particular a state deviating from the starting state of the substrate (particularly the curvature existing before contact). According to the invention, the bonding after contact of the contact surfaces is controlled in particular by controlled control of the fixing of the substrate. Corresponding fixing means are provided in particular as a device.

  Another particularly independent aspect of the invention lies in the use of individually switchable fixing elements, which control the joint wave traveling between the contact surfaces for closed loop control or open loop control. be able to.

  Another idea according to the invention, in particular independent or in combination with the above, consists in the use of deformation elements, in particular as bending means formed as gas outflow openings and / or as bending modification means. This avoids mechanical contact with the substrate. The curvature is controlled more accurately by the combination of the above features.

  In particular, the present invention describes a method and apparatus that can optimally bond two substrates that are aligned with each other. In this case, in particular, the underlying idea is to control the bending, fixing, and / or release of at least one of the two substrates according to the purpose, to control the proceeding bonded wave, Control, closed-loop control, or open-loop control is used to make continuous optimal contact between both substrates, particularly from the inside to the outside, along the contact surface. Optimal contact means in particular that the “runout” error at each point of the contact surface between the two substrates is minimal or at best eliminated.

  According to one configuration, the fixing of the substrate is performed in particular by a plurality of fixing elements divided into a plurality of areas.

  According to another configuration, the bending of at least one substrate is effected by positive pressure.

  In the starting state, the substrate is usually in particular the contact surface, excluding structures (microchips, functional parts) protruding from the contact surface provided in some cases and substrate tolerances such as bending and / or thickness variations. It is almost flat. However, the substrate often has a curvature different from zero in the starting state. For 300 mm wafers, curvatures of less than 100 μm are common. Mathematically, curvature can be viewed as a measure of the local deviation of the curve from its planar state. Specifically, a substrate whose thickness is smaller than its diameter is considered. Therefore, when well approximated, it can be called the curvature of the plane. In the case of a plane, the plane state described first is the tangential plane of the curve at the point where curvature is observed. In general, the curvature is an explicit function of position because objects, especially substrates, do not have a uniform curvature. Thus, as an example, the non-planar substrate has a concave curvature at the center, but has a convex curvature at another location. According to the present invention, a curvature or a curvature change means, unless otherwise specified, a macroscopic, i.e., a curve or a curvature change with respect to the entire substrate or the contact surface.

  According to the present invention, a convex curve as viewed from the opposing substrates is preferable. It is further preferred if the curvature of both substrates is mirror-image-symmetric with each other.

  Another possibility to show curvature at a given point is to show the radius of curvature. The radius of curvature is the radius of a circle that touches the surface and includes a point on the surface.

  Therefore, in the main embodiment of the present invention, the center of the independent idea is that the radius of curvature of the two substrates to be bonded to each other is mainly at the contact area of the substrates, that is, at the bonding front of the bonding wave or at the bonding line. It is the same or at least slightly different from each other. The difference between the radii of curvature at the bonding front / bonding line of the substrate is less than 10 m, preferably less than 1 m, more preferably less than 1 cm, more preferably less than 1 mm, and even more preferably. It is less than 0.01 mm, and most preferably less than 1 μm. In general, all embodiments according to the invention that minimize the difference between the radii of curvature R1, R2 are advantageous.

  In other words: the present invention relates to a method and apparatus that allows two substrates to be joined together so that local alignment errors, called “runout” errors, are minimized. Various “runout” errors are described in detail in WO 2014/191033 (WO2014191033A1), and can be referred to. The description of the runout error in WO2014 / 191033 (WO2014191033A1) is hereby expressly included in the disclosure content of this specification. The detailed explanation is therefore omitted here.

  In this case, more particularly, the underlying idea of the present invention is that the influence factor on the joining wave generated by the fixing / controlling of the two substrates to be joined to each other is particularly fixed, particularly by fixing that can be controlled over a wide surface portion. It is in the control that the substrates are selected so that they do not slide on each other locally during bonding, i.e. remain precisely aligned. The present invention further describes an article consisting of two substrates bonded together that include a reduced “runout” error according to the present invention.

  A characteristic process according to the invention during bonding, in particular permanent bonding, preferably melt bonding, is that the two contact surfaces of the substrates are as central and / or point-like as possible. In general, the contact between the two substrates does not have to be performed at the center. Bonding waves propagating from non-centered contact points arrive at various locations on the substrate edge at various times. Thus, a mathematical and physical complete description of the junction wave characteristics and the resulting “runout” error compensation is complex. Since the contact point is preferably not far from the center of the substrate, the effects which can be caused by this, especially at the edge of the substrate, can be ignored. According to the invention, the distance between the non-center possible contact point of the substrate and the center is particularly less than 100 m, preferably less than 10 mm, more preferably less than 1 mm, more preferably It is less than 0.1 mm, most preferably less than 0.01 mm. In the following description, contact usually means center contact. In the broad sense, the center preferably means the geometrical center point of the underlying ideal object, compensated for asymmetry as required. That is, in an industrially widely used wafer having a notch, the center is a circle center point of a circle surrounding a virtual wafer not having a notch. In industrially used wafers having a flat portion (flat chamfered surface), the center is the center point of a circle surrounding a virtual wafer that does not have a flat portion. Similar considerations apply to arbitrarily shaped substrates. However, in particular embodiments, it can be beneficial for the center to mean the center of gravity of the substrate.

  In order to ensure accurate and central point-like contact, according to an embodiment of the invention, a central hole and a pin that can be translated in this hole are provided as a bending means and / or a bending modification means. In particular, the upper holding device (substrate holder) is provided with a fixing member which is particularly symmetrical in the radial direction as fixing means. It is also conceivable to use, as the bending means and / or the bending-changing means, a nozzle which is used to pressurize fluid instead of pins, preferably gas, preferably to the substrate, in particular directly (fluid pressurizing means). . A device which allows the two substrates to be brought close to each other by translational movement, on the other premise that both substrates have a curvature that is pushed in the direction of the other substrate, in particular under gravity and / or preloading. If provided, the use of this type of element can even be dispensed with entirely. The substrate automatically contacts the corresponding second substrate with a sufficiently small spacing during translation.

  The fixing element is a provided exhaust hole, one or more circular exhaust lips, or a comparable exhaust element capable of fixing a wafer, according to embodiments of the present invention. The use of a plurality of electrostatic fixing elements (fixing means) is also conceivable. A central hole or pin in the conduit that can generate a positive pressure due to the introduced gas between the substrate holder and the substrate is used for controllable bending of the fixed substrate (bending means and / or Or curvature changing means).

  After the centers of the two substrates are in contact, the fixing means of the holding device is in particular driven and controlled so that a controlled deformation / curvature change of at least one of the substrates is performed. The upper substrate is controlled and pulled downward on the one hand by gravity and on the other hand by the bonding force acting between the two substrates along the bonding wave. Therefore, the upper substrate is bonded to the lower substrate in the radial direction from the center toward the side edge. In this way, the formation according to the invention of a radially symmetric joining wave, in particular extending from the center towards the side edges, takes place. During the bonding process, the two substrates push the gas present between them, in particular air, in front of the bonding wave, thereby creating a bonding interface free from gas inclusions. The upper substrate is actually located on a kind of gas cushion when it is completely dropped. After a defined point in time, all the fixing elements of the substrate holder can be switched off, so that the upper substrate is left under the influence of gravity and / or attractive forces between the substrates themselves. At this point, the curvature change of the upper substrate is no longer open or closed loop controlled, but still proceeds in a controlled manner because the surrounding conditions are known or determined empirically. Based on the controlled curvature change and the progress of the joining wave, the curvature change of the lower substrate is controlled in an open loop or a closed loop. However, the preferred configuration according to the present invention does not completely drop the upper substrate, but the bonded wave extends over at least 10% of the substrate area, preferably over 20%, more preferably over 30%. More preferably, both substrates are completely controlled until they are spread over 50% or more, most preferably over 75%.

  After the above point in time when all the fixing elements of the upper holding device are switched off, no special additional fixing is necessary. That is, the upper substrate can move freely except for fixing at the joining start point, and may be distorted. Due to the joining wave proceeding according to the invention, the stress conditions occurring at the joining wavefront, and the existing geometric edge conditions, each circular segment that is infinitely small compared to the thickness in the half-direction is distorted. However, since the substrate is a rigid object, the distortion is added as a function of distance from the center. This leads to “runout” errors which are eliminated by the method according to the invention and the device according to the invention. The upper substrate is held fixed during the entire time interval in which the bonding wave travels, and the progress of the bonding wave is initiated by a continuous switch-off of the fixed element, in particular by starting from a fixed element inside the substrate holder. It is also possible that progress can be made. The progress of the bonding wave can be promoted well, in particular, by the two substrate holders approaching each other during the progress of the bonding wave.

  Thus, the present invention particularly reduces or even completely eliminates “runout” errors between two substrates to be bonded, particularly by thermodynamic and / or mechanical compensation mechanisms. The present invention relates to a method and an apparatus.

  The invention further relates to a corresponding article produced using the device according to the invention and the method according to the invention.

Holding device / substrate holder The substrate holder according to the invention has fixing means, in particular a plurality of fixing elements. Fixed elements may be grouped by area. The grouping of fixing elements by area also fulfills geometric, optical and preferably functional issues. A functional problem means, for example, that all the fixed elements of an area can be switched simultaneously. It is also conceivable that all the fixed elements of a zone can be switched individually. Thus, a plurality of fixing elements can be driven and controlled inside the area to lock or release the substrate at the same time, or they can be driven and controlled individually, but within the area, very specific substrate Deformation characteristics occur. The area may in particular have the following geometry:
・ One side,
・ Yen segments,
-Tiled areas, especially as triangles, squares or hexagons. In particular, there may be faces between the areas that do not have fixing elements. The spacing between such areas is in particular less than 50 mm, preferably less than 25 mm, more preferably less than 20 mm, more preferably less than 10 mm, most preferably less than 5 mm. If the area is formed as a circular segment, such spacing is the distance between the inner ring of the outer circle segment and the outer ring of the inner circle segment.

  The number of fixed elements in one area is arbitrary. In particular, at least one fixing element, preferably at least two fixing elements, preferably 10 or more, more preferably 50 or more, more preferably 100 or more, more preferably, in one area. There are more than 200, most preferably more than 500 fixing elements.

  According to a preferred embodiment of the present invention, the first holding device and / or the second holding device are arranged around the holding surface of the first holding device and / or the second holding device for holding the substrate. In particular in the form of a ring, preferably in an annular shape, in particular in the region of the side edge of the substrate.

  The fastening means is formed as a particularly individually controllable fastening element divided into a plurality of zones, preferably arranged concentrically, distributed evenly on the holding surface. Preferably, the fixing means are arranged exclusively in the edge region of the holding surface. The edge region in particular extends to half the radius of the holding surface, preferably to 1/4 of the radius.

  If the fixing elements are arranged radially symmetrically in one area, the number of fixing elements per given cross section can also be taken into account. The number of fixing elements in the cross-section is less than 20, preferably less than 10, more preferably less than 5, more preferably less than 3 and most preferably 1.

  The fixing element can supply a negative pressure for fixing and can also apply a positive pressure for releasing the substrate.

  In a first embodiment according to the invention, the fixing element consists of a simple hole, in particular formed by drilling or spark erosion. In a special configuration, the fixing element is a slit formed in a ring shape, in particular in an annular shape, in particular by milling. In another configuration, the fixing element may be provided with an exhaust lip. If the fixing element is provided as an exhaust element, this fixing element is less than 1 bar, preferably less than 0.1 mbar, more preferably less than 0.01 mbar, more preferably less than 0.001 mbar, Most preferably, a pressure of less than 0.0001 mbar can be generated.

  In a second embodiment according to the present invention, it consists of a fixing element, a conductive plate used as static electricity fixing. The conductive plate can be connected unipolar, preferably bipolar. In the case of a bipolar circuit, the two plates are placed at opposite potentials. Therefore, the substrate holder according to the present invention functions in that area as an electrostatic substrate holder having high resolution electrostatic fixation characteristics depending on the number of plates.

  As the number of fixing elements per unit area increases, the control of the fixing characteristics of the substrate holder for the substrate becomes better.

  Preferably, the first holding surface and / or the second holding surface, in particular, a first holding plane of the first holding surface and a ridge forming a second holding plane of the second holding surface. Consists of.

According to two alternative embodiments, a holding device with ridges, in particular a protruding substrate holder, is described. Such a substrate holder means in particular a substrate holder having a plurality of symmetrically arranged supports (pillars in English). These supports are in particular formed as protrusions. The protrusion may have an arbitrary shape. In particular, the protrusion is provided in the following shape.
Pyramids, especially triangular or quadrangular pyramids, cylinders, especially cylinders with flat or rounded heads, cuboids, cones, spherical shells.

  While spherical shell protrusions, conical protrusions, and cylindrical protrusions are laborious to manufacture, pyramidal or rectangular parallelepiped protrusions can be manufactured relatively easily by etching and / or milling, and therefore are According to this, it is preferable.

  Since the above-mentioned protruding substrate sample holder may be closed at the peripheral area via the edge element, the space area between the protrusions may be interpreted as a recess. However, the projections may form only one ridge with respect to the projection plane where all the projections lie on that plane.

  In a third preferred embodiment of the invention, the substrate holder is configured as a protruding substrate holder with a web. In this case, the individual areas are interrupted by the web. Inside each section terminates at least one conduit that evacuates the space between the protrusions. In particular, by using a plurality of passages that can be individually driven and controlled, it is possible to evacuate spaces having different strengths depending on the location.

  In a further preferred fourth embodiment, the substrate holder is configured as a complete protruding substrate holder, i.e. without a web.

  The width or diameter of the ridges, in particular the protrusions, is particularly less than 5 mm, preferably less than 1 mm, more preferably less than 500 μm, most preferably less than 200 μm.

  The height of the ridges, in particular the protrusions, is particularly less than 2 mm, preferably less than 1 mm, more preferably less than 500 μm and most preferably less than 200 μm.

  In particular, the ratio between the width or diameter of the ridge and the height of the ridge is greater than 0.01, preferably greater than 1, more preferably greater than 2 and even more preferably greater than 10. And most preferably greater than 20.

  All the embodiments of the present invention described above may be arbitrarily combined with each other. It is therefore conceivable that the first zone consists of an electrostatically functioning fixing element and the second zone has a vacuum lock.

  The substrate holder according to the invention may in particular have a hole, hereinafter referred to as a measurement hole, through which the fixed substrate surface is observed from the back side of the substrate holder. be able to. Thereby, it is possible to measure the surface of the substrate fixed in this region. The measuring hole can also be closed by a cover. In a particularly preferred embodiment, the measurement hole can be opened and closed automatically by the cover.

  According to a preferred configuration of the present invention, the holding device has a curvature measuring means for measuring the curvature.

The substrate holder according to the invention may optionally or additionally have a sensor capable of measuring physical and / or chemical properties between the fixed substrate and the substrate sample holder. These sensors are preferably
A temperature sensor and / or a pressure sensor and / or a distance sensor.

  A particularly suitable distance sensor can be used as a curvature measuring means. In this case, depending on the distance between the substrate and the holding device, the curvature of the substrate, in particular between the support points, is determined, interpolated and / or calculated.

  According to the invention, preferably distance sensors distributed especially along the holding surface are used in order to allow good closed-loop or open-loop control of curvature and / or curvature modification.

  In a particularly preferred configuration, the plurality of sensors are formed as distance sensors, inter alia, for measuring the distance of the substrate relative to a plane before and / or during the bonding process. This plane is preferably a holding surface and / or a flat holding surface, in particular formed by ridges.

  It is also conceivable that a plurality of sensors are located on different planes. The relationship with respect to one and / or several planes is not important, since the sensor preferably measures only the change in distance, preferably exclusively transverse to the contact surface. In this case, it is only necessary to detect only relative distance changes of the substrate, particularly in different places.

  Distance measurement is particularly useful for process control. By knowing the exact curvature state of the substrate or substrates, the drive control / adjustment of the fixing member according to the invention is carried out particularly efficiently for optimal, in particular stepwise release of the substrate.

  It is also conceivable that different types of sensors are incorporated. In a particularly preferred embodiment, sensors for distance measurement and pressure measurement are in particular incorporated in the substrate holder in a symmetrical and evenly distributed manner. Thereby, although it is discrete, distance measurement and pressure measurement covering the surface are possible. Pressure measurement is particularly advantageous when the deformation element is a fluid, in particular a gas, or a gas mixture provided via a conduit.

  If one or both holding devices are formed without curvature measuring means and / or without sensors, the adjustment and / or control of the curvature and / or curvature change is performed based on parameters determined empirically. It's okay.

  The first and second substrate holders according to the invention preferably have at least one, in particular centrally configured deformation means (curving means and / or curvature changing means) for bending / curving the substrate. doing.

  According to a first embodiment according to the invention, the bending element is a pin (English: pin). This pin has at least one, preferably exactly one degree of freedom of translation along the normal to the holding surface or holding plane. It is also conceivable that the pins have a degree of freedom along the holding surface in order to calibrate in the x and / or y direction. Preferably, the pin can be fixed in the x and / or y direction. The pin can apply a force of 0.01N to 1000N, preferably 0.1N to 500N, more preferably 0.25 to 100N, most preferably 0.5 to 10N.

  In a second embodiment according to the invention, the bending and / or deformation element for bending modification is a fluid outflow opening (fluid addition) that can supply a fluid, in particular a gas or a gas mixture, between the substrate and the holding surface. Pressure means). In a highly preferred embodiment according to the invention, the fluid outflow opening is incorporated in a partial element that is inherently movable, in particular in the x and / or y direction, so that the positioning of the fluid outflow opening in the x direction and / or Positioning in the y direction can be performed. This precisely defines the position of the fluid outlet opening, which can also affect the optimum joining result according to the invention. In the simplest case, the fluid outlet opening is the opening that forms the end of the conduit. In a very particularly preferred embodiment, the fluid outflow opening is a nozzle. Preferably, the nozzle can be controlled electronically so that at each point in time, the fluid pressure and / or the outflow rate of the outflowing fluid can be controlled in an open loop and / or closed loop. The use of multiple nozzles is also conceivable to change the pressure formation at multiple locations between the substrate sample holder and the substrate. All the descriptions for one nozzle apply to a plurality of nozzles as well. More preferably 1 mbar or more, preferably 10 mbar or more, more preferably 100 mbar or more, more preferably 200 mbar or more, most preferably between the substrate and the substrate holder via a fluid outlet opening, in particular a nozzle. A pressure of 500 mbar or more can be created. All substrate holders according to the present invention may have loading pins (English: loading pins). The loading pins are used to load a substrate on the substrate holder according to the present invention. In particular, the loading pin is guided through a hole provided in the holding device. In this case, this hole is preferably formed densely with respect to the loading pin.

  In the first process step, the loading pin is brought out. In the second process step, the substrate is placed on the loading pins, in particular fully automatically. In the third process step, the loading pins are returned inside to bring the substrate into contact with the holding surface. In the fourth process step, the substrate is fixed by a fixing element. The loading pin is also used for unloading the bonded substrate stack. In this case, the order of the process steps is correspondingly reversed. The loading pin may form a decompression body, particularly if it is not sealed against the hole in which the loading pin moves. In this case, it is impossible to statically maintain the negative pressure through the vacuum fixing element and / or to maintain the positive pressure statically by means of the gas outlet opening. Correspondingly, continuous exhaust through the vacuum fixing element and / or the formation of a continuous positive pressure through a gas outlet opening, preferably characterized by a static, in particular laminar flow, is disclosed. However, the use of a seal is also conceivable, which can create a static pressure without creating a flow.

Basically, the substrate holder can be made of any material. One or more of the following materials are particularly suitable.
・ Metals, especially ・ Pure metals, especially ・ Aluminum ・ Alloys, especially ・ Steel, especially ・ Low alloy steel,
・ Ceramic, especially ・ Glass ceramic, especially ・ Zerodure,
・ Nitride ceramics, especially ・ Silicon nitride,
Carbide ceramics, especially silicon carbide
・ Polymers, especially ・ High-temperature polymers, especially ・ Teflon,
-Polyetheretherketone (PEEK).

  In a very preferred embodiment, the protruding substrate sample holder according to the invention is manufactured in a known manner according to the patent document EP 2 265 006 (EP2655006B 1). In this case, the preferred material is silicon carbide or silicon nitride. In this case, a preferable protrusion structure is a quadrangular pyramid.

  According to an embodiment of the present invention, the holding device is preferably formed to be heatable and / or coolable. In this case, by the temperature control mechanism, the substrate of −50 ° C. to 500 ° C., preferably −25 ° C. to 300 ° C., more preferably 0 ° C. to 200 ° C., most preferably 10 ° C. to 100 ° C. Heat treatment is possible.

  In another embodiment of the present invention, the substrate holder is formed as follows. That is, the substrate is deliberately deformed by heating and / or cooling means before it is still contacted, particularly compressed or stretched laterally, and the “runout” that occurs during subsequent contact. It is designed to be able to deform the error as much as possible, ideally completely, as much as necessary to compensate. In this embodiment, the lower / first substrate is fixed only after a corresponding deformation, so that the thermal expansion coefficient of the lower / first substrate or the lower / first holding device is Is not particularly important. In a particularly preferred embodiment according to the invention of the protruding substrate holder, the substrate can be brought into contact with the heated gas via the space area between the protrusions. In order to maintain the fixability of the fixing element, the pressure of the heated gas must be lower than the ambient gas pressing the substrate against the substrate holder in the area of the area.

Bonder The device according to the invention consists of two holding devices and / or substrate holders according to the invention. Preferably, at least the upper substrate holder has a measurement hole. The measuring hole is particularly closable and / or gas tight.

  Embodiments according to the invention operate in a well defined and particularly controllable atmosphere, in particular at normal pressure.

  All the embodiments of the invention described above can be carried out in a special variant embodiment in a low vacuum, more advantageously in a high vacuum, even more advantageously in an ultra-high vacuum, in particular A pressure lower than 100 mbar, preferably lower than 0.1 mbar, more preferably lower than 0.001 mbar, more preferably lower than 10e-5 mbar, most preferably lower than 10e-8 mbar Can be run at low pressure. The higher the vacuum or the lower the surrounding pressure, the more difficult the substrate is fixed by the exhaust holes.

Process In a first process step according to the invention of a first process according to the invention, a first substrate is loaded into a first substrate holder and a second substrate is loaded into a second substrate holder, in particular in the surrounding section. Fix it.

  In a second process step according to the invention of the first process according to the invention both substrates are aligned with each other. Substrate alignment will not be described in detail herein. For that, reference is made to documents, US Pat. No. 6,214,692 (US6214692B1), International Publication No. 2015/082020 (WO2015082020A1), International Publication No. 2014/202106 (WO2014202106A1). The substrates are particularly aligned with each other before the bonding process, whereby the overlap of the corresponding structures on the surface (especially less than 2 μm, preferably less than 250 nm, more preferably less than 150 nm). And, more preferably, an accurate alignment with an accuracy of less than 100 nm, most preferably less than 50 nm).

  In a third additional process step according to the invention of the first process according to the invention, the two substrates are brought into close proximity by the relative movement of both substrate holders facing each other. Thereby, a well-defined interval (English: gap) between the substrate surfaces is formed. It is also conceivable to adjust such spacings already before or during the alignment process. This spacing is in particular smaller than 1000 μm, preferably smaller than 500 μm, more preferably smaller than 250 μm, most preferably smaller than 100 μm.

  According to the invention, it is particularly preferred that the deviation of the curvature radii of the two substrates from each other is less than 15%, preferably less than 10%, more preferably less than 5%, especially at the junction front. More preferably, it is less than 2%, and most preferably the curvature radii of both substrates are the same.

  In a fourth process step according to the invention of the first process according to the invention, the bending of the first and / or the second substrate is performed. At the same time, the curvature of the first and / or second substrate is measured and monitored by a sensor. The adjustment loop can automatically adjust the particularly desired curvature in the lower and / or upper substrate. A target value is set. The adjustment loop controls the fixed element and / or the deformation element until the desired curved profile is adjusted. In this case, it is stated that gravity acts in one direction and thus can affect the deformation of the substrate in various ways. While the upper fixed substrate is further deformed by gravity in the direction of the desired contact point, this gravity acts against the curvature of the lower substrate. However, the effect of gravity is so small that it does not have to be taken into account. In accordance with the present invention, a part of the adjustment loop, in particular for each of both substrates, by using a bending means or bending modification means, fixing elements and sensors that are automatically open-loop controlled or closed-loop controlled. As desired, the desired curve profile can be adjusted. When both substrates are brought close enough to each other, contact of both substrates is made. Contact may be made by constantly increasing curvature and / or by the relative proximity of both substrate holders. That is, in the bonding method according to the present invention, the substrates are not overlapped flat but are first brought into contact with each other at the center M (bonding start point). This is done by either one of the curved substrates being lightly pressed against the second substrate or being deformed accordingly in the direction of the substrate located opposite. After the deformed and bent substrate (in the direction of the oppositely facing substrate) is released, the advancement of the bonding wave causes minimal force and thus mainly minimal horizontal distortion. In particular, at least partial, preferably most, automatic, continuous and uniform joining along the joining front takes place.

  In a fifth process step according to the invention of the first process according to the invention, the progress, monitoring and control of the joint wave is performed. When the joining start point is arranged at the center of the contact surface of the substrate, a uniform, particularly concentric course of the joining wave can be realized.

  It is particularly advantageous if the deformation of the first substrate and / or the second substrate, preferably the bending, takes place laterally and / or convexly and / or concavely, more preferably mirror-symmetrically. Done. In other words, the deformation is effected according to the invention, in particular by stretching and / or compressing and / or bending the first substrate and / or the second substrate.

  Preferably, the substrates have approximately the same diameters D1, D2, and the deviation of these diameters from one another is in particular less than 5 mm, preferably less than 3 mm, more preferably less than 1 mm.

  According to another aspect of the invention, which is particularly independent, the deformation, preferably the bending, is performed by the deformation means or the bending means and / or the bending modification means and / or of the first and / or second holding device. Performed by temperature control.

  The first substrate and / or the second substrate is fixed exclusively in the region of the first substrate holder and / or the second substrate holder, or the periphery or the entire circumference of the first and / or second substrate. Thus, the deformation / curving / curving change according to the present invention can be realized relatively easily.

  In particular, the above-described steps and / or movement and / or progress control of the deformation means or the bending means and / or the bending modification means and / or the fixing means, the mutual access of the substrates, the temperature control, the pressure control, and the gas Control of the composition is advantageously effected via a central control unit, in particular via a computer with control software. The sensors described above are used for open loop control and / or closed loop control.

  In order to give the substrate as much flexibility and stretching freedom as possible in the fixing part, it is advantageous that the substrate is fixed only in circular segments located as far as possible outside in the region of the side edges.

  The first substrate and / or the second substrate are preferably radially symmetric. The substrate can have any arbitrary diameter, but the substrate diameter is in particular 1 inch, 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, 12 inches, 18 inches, or 18 inches. Bigger than. The thickness of the first substrate and / or the second substrate is 1 μm to 2000 μm, preferably 10 μm to 1500 μm, more preferably 100 μm to 1000 μm.

  In particular embodiments, the substrate may have a shape that is different from a square shape or at least a circular shape. A wafer is preferably used as the substrate.

  Particularly advantageously, all variable parameters are chosen such that the joint wave propagates at the optimum speed possible with respect to the existing initial and ambient conditions. Especially in the atmosphere present, in particular at normal pressure, the slowest possible speed of the joining wave is advantageous. The average velocity of the joining wave is in particular slower than 200 cm / s, more advantageously slower than 100 cm / s, more advantageously slower than 50 cm / s, most advantageously slower than 10 cm / s, most advantageous Is slower than 1 cm / s. In particular, the speed of the joining wave is faster than 0.1 cm / s. In particular, the velocity of the joining wave is constant along the joining front. In a vacuum atmosphere, the speed of the joining wave is automatically increased. This is because the substrate bonded along the bonding line does not have to overcome the resistance caused by the gas.

Another particularly independent aspect of the invention is that at least one of the substrates is pre-contacted with a preload extending radially outward, particularly concentrically with respect to the center M of the contact surface of the substrate. Then, it only affects the start of contact, and after contact of one section of the substrate, especially at the center M, the substrate is released and is automatically controlled based on its preload and bonded to the opposing substrate. Is adjusted as much as possible, and at the same time almost automatically makes contact. The preload is obtained by deformation of the first substrate by the deformation means, in particular the bending means and / or the bending change means, in particular the bending. In this case, the deformation means act on the side opposite to the joining side, in particular on the basis of its shape, and the deformation can be controlled accordingly by the use of various (especially interchangeable) deformation means. Control is also performed by the pressure or force that causes the deformation element to act on the substrate. In this case, the effective holding area of the substrate holding with the substrate is reduced, so that the substrate is advantageously supported only partially by the holding device. In this way, the small contact surface results in little adhesion between the substrate and the substrate holder. According to the present invention, the fixing is performed particularly in the entire circumference of the substrate, so that effective fixing is performed, and at the same time, an effective holding area as small as possible between the holding contour of the substrate holder and the substrate is generated. . Therefore, since the release force required for peeling the substrate is minimal, clean and reliable peeling of the substrate is possible. Peeling is particularly controllable, especially by reducing the negative pressure on the holding surface. Controllable means that after the substrate contacts the second substrate, the substrate is still fixed to the sample holder, and the sample holder (holding is only held by reducing the negative pressure at the desired (controlled) holding surface. It means that the release of the substrate (wafer) from the device is carried out in particular from the inside to the outside. The embodiment according to the invention leads in particular to the ability to perform peeling with very little force. In particular, a number of different release methods are disclosed.
-Sudden complete release of the substrate while the deformation means is stopped,
-Sudden complete release of the substrate when the deformation means is naturally left in its starting state and thus immediately ceases to act on the substrate,
-Sudden complete release of the substrate when the deformation means stops acting on the substrate step by step, but continuously
Release of the substrate in stages, in particular on a zone-by-zone basis, preferably from the inside to the outside, by means of a fixed step-off, which takes place while the deformation means is acting on the substrate,
-A combination of the above methods.

The embodiment according to the invention discloses a bonding process in which both substrates are curved in an optimal form. However, in general, at least one of the substrates may not be deformed. In combination with the above release mechanism, the following table is shown.

  Features disclosed for the device are equally applicable as disclosed for the method, and features disclosed for the method are equally applicable as disclosed for the device.

  Other advantages, features, and details of the present invention will be apparent from the following description of the preferred embodiments and drawings.

FIG. 1a is a schematic partial view, not to scale, of a first embodiment of a holding device according to the invention, and FIG. 1b is a schematic view, not to actual scale, of a second embodiment of a holding device according to the invention. FIG. 1c is a schematic partial view, not to scale, of a third embodiment of a holding device according to the present invention, and FIG. 1d shows the actual embodiment of a fourth embodiment of a holding device according to the present invention. FIG. 1e is a schematic partial view that is not an actual scale of the first embodiment of the bending (modifying) means by the holding device according to the present invention, and FIG. FIG. 7 is a schematic partial view, not an actual scale, of a second embodiment of the bending (changing) means by the holding device according to the invention. FIG. 9 is a schematic plan view, not an actual scale, of a fifth embodiment of a holding device according to the present invention. FIG. 9 is a schematic plan view, not an actual scale, of a sixth embodiment of a holding device according to the present invention. FIG. 10 is a schematic plan view, not an actual scale, of a seventh embodiment of a holding device according to the present invention. FIG. 10 is a schematic plan view, not an actual scale, of an eighth embodiment of a holding device according to the present invention. It is a schematic top view which is not an actual scale scale of 9th Embodiment of the holding | maintenance apparatus by this invention. Figures 3a to 3e are schematic side and top views, not to scale, of an embodiment of a ridge according to the present invention. FIG. 2 shows a schematic cross-sectional view, not with actual scale, of an embodiment of a bonding machine according to the invention in a first method step of the method according to the invention, together with a pressure graph and a distance graph. FIG. 4b is a schematic cross-sectional view, not to scale, of the embodiment of FIG. 4a in another method step. FIG. 4b is a schematic cross-sectional view, not to scale, of the embodiment of FIG. 4a in another method step. FIG. 4b is a schematic cross-sectional view, not to scale, of the embodiment of FIG. 4a in another method step. FIG. 4b is a schematic cross-sectional view, not to scale, of the embodiment of FIG. 4a in another method step.

  In the drawings, the same reference numerals are given to the same components and components having the same functions.

  FIG. 1a shows a schematic partial view, not to scale, of a cross-section of a first configuration of a holding device 1 according to the invention (optionally also called substrate holder). In this case, only the edge region R with the fixing element 2 (fixing means) is shown.

  The holding device 1 preferably consists of a plurality of zones Zi present in the edge region R. Each zone Zi has a plurality of fixing elements 2. In FIG. 1a, for example, two zones Z1 and Z2 are shown. Four fixing elements 2 are shown in cross section in the first zone Z1, and two fixing elements 2 are shown in the second zone Z2. In particular, the zone Zi may be limited to the edge region R of the substrate holder 1 or may be distributed throughout the substrate holder 1.

  The fixing element 2 is used to fix the substrate holding surface 4a of the first, in particular the upper substrate 4o, or the second, in particular the lower substrate 4u.

  Preferably, a plurality of sensors 3, 3 ', in particular a distance sensor, are located on the holding surface 1s. The sensor is used to measure physical and / or chemical properties between the fixed substrate 4 and the holding surface 1s. In particular, the sensors 3 and 3 ′ are distance sensors that measure the distance between the holding surface 1 s and the substrate holding surface 4 a.

  The substrate holder 1 is preferably configured such that the bending elements 5, 5 '(bending means) are present at its center C (see FIGS. 1e and 1f). By this bending element, the substrates 4o and 4u fixed to the substrate holder 1 can be bent. Particularly preferably, the bending element 5 is a fluid outlet opening through which a gas, in particular a compressed gas, can be discharged between the substrate holder 1 and the substrate 4. The substrate 4 is bent by the positive pressure and at the same time is fixed by the fixing element 2 or controlled and released.

  In the optional inventive configuration shown in FIG. 1f, the bending element 5 ′ is a pin, which extends through the holding device 1 and is perpendicular to the holding device. (Bending means or bending changing means).

  The description with respect to FIGS. 1e and 1f applies equally to the arrangement according to FIGS. 1a to 1d.

  FIG. 1b shows a second configuration of the substrate holder 1 'according to the invention. The substrate holder 1 'preferably consists of a plurality of zones Zi present in the edge region R'. Each zone Zi can generally have a plurality of fixing elements 2 '. The fixing element 2 'is an electrostatically fixed electrode. In FIG. 1b, for example, two zones Z1 and Z2 are shown. In the first zone Z1, two fixing elements 2 'are shown in cross section, and in the second zone Z2, three fixing elements 2' are shown in cross section. In particular, the zone Zi may be limited to the outer edge of the substrate holder 1 'or may be distributed throughout the substrate holder 1'.

  Preferably, a plurality of sensors 3, 3 ', in particular a distance sensor, are located on the holding surface 1s'. The sensors 3, 3 'are used to measure physical and / or chemical properties between the fixed substrate 4 and the holding surface 1s'. In particular, the sensors 3 and 3 'are distance sensors that measure the distance between the holding surface 1s' and the substrate holding surface 4a.

  FIG. 1 c discloses a third configuration of the substrate holder 1 ″ according to the present invention. The substrate holder 1 "preferably consists of a plurality of zones Zi that are exclusively present in the edge region R". Each zone Zi has in particular a plurality of fixing elements 2 ''.

  The fixing element 2 ″ is a space region 9 between the web 8 or edge element 10 adjacent to the substrate holding surface 4 a, and the web 8 and the bottom surface penetrated by the pipe 6. In the pipe 6, the pressure for fixing the substrates 4 o and 4 u by suction is adjusted.

  In particular, a plurality of protrusions 7 are located in the space region 9, and the substrates 4o and 4u are placed on these protrusions. The protrusion 7 serves in particular to avoid excessive contamination. The protrusions 7 are shown larger than average in FIG. 1c for ease of viewing. In practice, the protrusion 7 is significantly smaller than the thickness of the substrate holder 1 ″.

  In FIG. 1c, for example, two zones Z1 and Z2 are shown. In the first zone Z1, three fixing elements 2 'are shown in cross section, and in the second zone Z2, three fixing elements 2 "are also shown in cross section. In particular, the zone Zi may be limited to the outer edge of the substrate holder 1 "or distributed throughout the substrate holder 1".

  Preferably, a plurality of sensors 3, 3 'are located on the projection surface 7o of the projection 7 that contacts the substrate holding surface 4a in particular in the state where the distance sensor is not particularly curved. The sensor is used to measure physical and / or chemical properties between the fixed substrate 4 and the holding surface 1 s ″ defined by the protruding surface 7 o and the surrounding edge element 10. The sensors 3, 3 'are in particular distance sensors that measure the distance between the projection surface 7o and the substrate surface 4o.

  FIG. 1d shows a substrate holder 1 "" in a fourth configuration according to the invention. The substrate holder 1 "" in particular consists of a plurality of zones Zi that are preferably present in the edge region R "". Each zone Zi has a plurality of fixing elements 2 "".

  The fixing element 2 "" is a space region 9 between two adjacent ducts 6 that can create pressure inside. The spatial region 9 is defined only around the holding device 1 ″ ″ by the surrounding edge element 10. The substrates 4o and 4u are mounted on the edge element in an annular shape, and the edge element forms a holding surface 1s '' together with the protruding surface 7o.

  In particular, a plurality of protrusions 7 are located in the space region 9, and the substrates 4o and 4u can be held on the protrusion surfaces 7o of these protrusions. The protrusion 7 serves in particular to avoid excessive contamination. The protrusions 7 are shown larger than average in FIG. 1d for ease of viewing. In practice, the protrusions are significantly smaller compared to the thickness of the substrate holder 1 "".

  In FIG. 1d, for example, two zones Z1 and Z2 are shown. One fixing element 2 "" is shown in cross section in the first zone Z1, and one fixing element 2 "" is also shown in cross section in the second zone Z2. In particular, the zone Zi may be limited to the outer edge of the substrate holder 1 "" or distributed over the entire substrate holder 1 "".

  Preferably, a plurality of sensors 3, 3 ′, in particular a distance sensor, are located on the bottom surface of the space region 9 between the protrusions 7. The sensors 3, 3 'are used to measure physical and / or chemical properties between the fixed substrate 4 and the bottom surface. In particular, the sensors 3 and 3 ′ are distance sensors that measure the distance between the bottom surface and the substrate holding surface 4 a. Thereby, based on the known height of the protrusion 7, the distance between the substrate holding surface 1 a and the protrusion surface 7 o can be calculated.

In the holding device 1 ^IV shown in FIG. 2a, the fixing element 2 is arranged in four concentric zones Z1-Z4. The bending elements 5, 5 ′ (see FIG. 1e or FIG. 1f) are located in the center C of the holding device 1 ^IV . The corresponding fixing elements 2 of the plurality of areas are respectively arranged along a straight line L extending in the radial direction.

In the holding device ^{1 V} shown in FIG. 2b, the fixed element 2 is arranged in four sections Z1-Z4. The center C of the holding device ^{1 V} curved elements 5,5 '(see FIG. 1e or FIG. 1f) is located. Corresponding fixing elements 2 of the plurality of sections are each arranged along a line L ′ that does not pass through the bending element 5, in particular does not pass through the center C. The line L ′ does not have to be a straight line. The corresponding fixed elements 2 that are opposed to each other are arranged in mirror image point symmetry with respect to the center C.

FIG. 2 c shows a holding device 1 ^VI with a plurality of projections 7 surrounded by an edge element 10 as in the configuration according to FIG. 1 c. Between the projections 7, a spatial region 9 is located that functions as the fixed element 2 ^IV during exhaust. Exhaust is performed via the pipe 6. In such a configuration of the invention, there is no web 8 separating the spatial regions 9 from each other, so that the fluid provided via the curved element 5 (see FIG. 1 e) is directly sucked again via the passage 6. Is issued. Therefore, such a configuration according to the present invention is an example of a substrate holder in which a static laminar flow is formed between the substrate holder 1 ^VI and the substrates 4o and 4u.

  In the arrangement of the invention shown in FIG. 2d, a plurality of zones Z each having three fixing elements 2 are provided. Zone Z is configured as a hexagon and at least substantially covers the holding surface. The center C and the periphery are not covered.

  In the arrangement of the invention shown in FIG. 2e, the fixing element 2 is arranged along one spiral. In this case, the entire holding surface 1s is only one zone Z. It is conceivable to drive and control the fixed elements individually or in groups. At the end of the helix and at the center C, curved elements 5, 5 'are arranged.

  All configurations according to FIGS. 2a to 2e are holding devices in which the fixing is carried out as a negative pressure fixing or a vacuum fixing. Similarly, a corresponding substrate holder for fixing static electricity can be realized. The sensors 3, 3 'are not shown for the sake of clarity, but may be configured correspondingly to the configuration according to FIGS. 1a-1d.

  3a to 3e show examples of the shape of the ridges 7, 7 ', 7 ", 7" ", 7"' ". The shape of FIG. 3a consists of a cylindrical substrate with a rounded head. The shape of FIG. 3b consists of a cylindrical substrate with a flat head. The shape of FIG. 3c consists of a hemispherical substrate. The shape of FIG. 3d consists of a triangular pyramid. The shape of FIG. 3e consists of a quadrangular pyramid.

FIG. 4a shows a bonding machine 13 according to the invention for contacting and bonding the contact surfaces 4k of the first / upper substrate 4o and the second / lower substrate 4u arranged opposite to each other. The bonding machine 13 includes a lower substrate holder 1u and an upper substrate holder 1o. The substrate holders 1u, 1o are in particular the holding devices 1, 1 ′, 1 ″, 1 ′ ″, 1 ^IV described above for holding the first / upper substrate 4o and the second / lower substrate 4u. , 1 ^V , 1 ^VI , and in this case, the lower substrate holder 1u may be configured or equipped differently from the upper substrate holder 1o.

  The upper substrate holder 1o preferably has a measurement hole 12, through which the substrate 4o can be measured from the back surface of the substrate holder 1o. A sensor may be selectively disposed in the measurement hole. In particular, the measuring hole 12 is arranged between the curvature changing means and the fixing element. Alternatively or additionally, the lower substrate holder 1u may have corresponding measuring holes 12. The measurement hole penetrates the holding device 1 and extends in particular perpendicular to the holding surface 1s. In particular, the measurement holes 12 are arranged at equal intervals with respect to the center of the holding surface 1s. Preferably, the measurement holes 12 are arranged 180 ° or 120 ° apart from each other.

  The substrate holders 1u, 1o have a holding surface 1s provided with a plurality of fixing elements 2 and sensors 3, 3 '. The fixing element 2 is exhausted through the pipe line 6 and fixes the substrates 4u and 4o. Graphs are described above and below the substrate holders 1u and 1o. In these graphs, the distance d between the sensor 3 configured as a distance sensor and the substrates 4u and 4o is in the x direction (substrate For each x position along (diameter). The distance sensor 3 is distributed from the curvature changing means 5 to the fixing means. Therefore, the distance sensor extends over the partial surface of the holding surface 1s.

  In the region of the fixing means 2, a sensor 3 'configured as a pressure sensor is arranged, and by this sensor, between the substrate 4u, 4o and the substrate holder 1u, 1o along the x position of the sensor 3'. The pressure p1 is measured at

  In the distance graph, target curves 15u and 15o set by software, and actual curves 14u and 14o measured by a distance sensor are displayed. In particular, the upper substrate 4o has an actual curve 14o that exists based on gravity, and the lower substrate 4u is placed flat, so in the present invention, it has an actual curve 14u. (In fact it has very little). However, it is conceivable that the actual curve 14o caused by gravity is negligibly small. The double curves 15u, 15o to be achieved are mirror-image symmetric in the embodiment. Arbitrary curves 15u and 15o can be set. The pressure distributions 16 u and 16 o show a pressure drop in the operating region of the stationary element 2. This indicates that the substrates 4u and 4o are fixed.

  The process steps for the mutual alignment of the two substrates 4u, 4o are not shown.

  FIG. 4b shows the bonder 13 in another process step. Both substrates 4u, 4o are brought close to each other by the relative movement of both substrate holders 1u, 1o. Other points are not changed from the state of FIG. 4a.

  FIG. 4c shows the bonder 13 in another process step. In the illustrated example, the use of the curved element 5, which is a gas outlet opening through which gas of pressure p 2 flows, brings both substrates 4 u, 4 o to the target curvature, in which case the pressure adjustment is preferably a distance sensor. 3 is performed. For closed-loop control / open-loop control, the pressure of the fixing element 2 can also be used, so that the fixing element can also assume the role of the bending means 5, 5 ′ or the bending changing means 5, 5 ′. Therefore, in the present invention, the fixing element 2 is also regarded as a bending means.

  In the illustrated example, for this purpose, the pressure of one of the fixing elements 2 is increased from the pressure p1 to the pressure p0 in order to achieve the desired curvature before contacting the substrates 4o, 4u. In the illustrated example, only three pressure values p0, p1, and p2 are shown for simplicity. The pressure value is particularly continuously and / or always controllable closed / open loop.

  FIG. 4d shows the bonder 13 in another process step. The two substrates 4u and 4o form a bonded wave that spreads outward in the radial direction due to the proximity of the substrates 4u and 4o. In this case, the curvature of the substrates 4u and 4o changes continuously (curvature changing means). In this case, the bending change of the lower substrate 4u and the upper substrate 4o is continuously monitored by the distance sensor, and if necessary, it is desired or set by the bending element 5 and / or the fixing element 2 each time. The curve is modified so that the target curve is achieved (curvature changing means). Important parameters are the radius of curvature R1 of the upper substrate 4o and the radius of curvature R2 of the lower substrate 4u at the junction wave point.

  The pressures in the rows of the four inner fixed elements 2 aligned in the circumferential direction are simultaneously increased to p0 in the upper holding device 1o and the lower holding device 1u. As a result, the substrates 4u and 4o lose their continuous sticking to the holding surface 1s, particularly from the inside to the outside, whereby the pressure p2 from the bending element 5 can be further expanded.

  By taking into account the curvature of the substrates 4o, 4u and the curvature change, the run-out error is minimized.

  FIG. 4e shows the bonder 13 in another process step. Both substrates 4u, 4o are controlled and joined together by increasing the pressure in the outermost row of the fixing elements 2 of the upper holding device 1o to p0.

1, 1 ′, 1 ″, 1 ′ ″ holding device / substrate holder 1 ^IV , 1 ^V , 1 ^VI holding device / substrate holder 1o first holding device / upper substrate holder 1u second holding device / bottom Side substrate holder 1s, 1s ′, 1s ″, 1s ′ ″ holding surface 2, 2 ′, 2 ″, 2 ″ ′ fixed element 2o ′ ″ fixed element surface 3, 3 ′ sensor 4o first / Upper substrate 4u Second / lower substrate 4a Substrate holding surface 5,5 'Curved element 6 Pipe line 7,7', 7 '', 7 ''',7''''Bump / projection 7o Projection surface 8 Web 9 Spatial region 10 Edge element 11 Projection plane 12 Measuring hole 13 Joiner 14u, 14o Actual curve 15u, 15o Target curve 16u, 16o Pressure course L, L 'line x position d Distance p Pressure R1, R2 Curvature radius

Claims (14)

A method of joining a first substrate (4o) to a second substrate (4u) at the contact surfaces (4k) facing each other of the substrates (4o, 4u), comprising the following steps, in particular the following sequence: ,
The first substrate (4o) is attached to the first holding surface (1s, 1s ′, 1 ^VI , 1 ^V , 1 ^VI ) of the first holding device (1, 1 ′, 1 ″, 1 ′ ″, 1 ^IV , 1 ^V , 1 ^VI ). 1s ″, 1s ′ ″) and hold the second substrate (4u) in the second holding device (1, 1 ′, 1 ″, 1 ′ ″, 1 ^IV , 1 ^V , 1 ^VI ) The second holding surface (1s, 1s ′, 1s ″, 1s ′ ″) of
Curving at least one of the contact surfaces (4k) before contacting the contact surfaces (4k),
Controlling the curvature change of the contact surface (4k) of the first substrate (4o) and / or the curvature change of the contact surface (4k) of the second substrate (4u) during bonding ;
At least one holding surface (1s, 1s ′, 1s ″, 1s ′ ″) has a raised portion (7, 7 ′, 7 ″, 7 ′ ″, 7 ″ ″) The at least one holding surface (1s, 1s ′, 1s ″, 1s ′ ″) does not have edge elements and / or the ridges (7, 7 ′, 7 ″, 7 ′ ″, 7 ″ ″) is characterized by forming only one ridge in the at least one holding surface (1s, 1s ′, 1s ″, 1s ′ ″) , A method of bonding the first substrate (4o) to the second substrate (4u).   The curvature and / or curvature change is adjusted and / or controlled mirror-symmetrically and / or concentrically with respect to the contact surfaces (4k) before contacting the contact surfaces (4k). Method.   Method according to claim 1 or 2, wherein at least one of said bending and / or bending modification is performed by a bending means (5 '), in particular a pin, in particular mechanical.   4. A method according to any one of the preceding claims, wherein at least one of the curvature and / or curvature modification is adjusted and / or controlled by fluid pressurization, in particular by a fluid that applies a load directly to the substrate. .   The holding surface (1s, 1s ′, 1s ″, 1s ′ ″) is formed in the first substrate (4o) and / or the second substrate (4u), particularly in a ring shape, preferably in an annular shape. 5), and is fixed by fixing means arranged in the range of the side edges (4os, 4us) of the substrate (4o, 4u) exclusively. The method described.   The fixing means is divided into a plurality of sections, in particular distributed uniformly on the holding surface (1s, 1s ′, 1s ″, 1s ′ ″), preferably arranged concentrically, in particular 6. The method as claimed in claim 5, comprising individually controllable fastening elements (2).   The first holding surface (1s, 1s ′, 1s ″, 1s ′ ″) and / or the second holding surface (1s, 1s ′, 1s ″, 1s ′ ″), in particular the first The first holding plane of one holding surface (1s, 1s ′, 1s ″, 1s ′ ″) and the second of the second holding surface (1s, 1s ′, 1s ″, 1s ′ ″) 7. The method as claimed in claim 1, wherein the ridges (7, 7 ', 7' ', 7' '', 7 '' '') form a holding plane.   The curvature and / or the curvature change, in particular a curvature measuring means, in particular a sensor, arranged along the first and / or second holding surface (1s, 1s ′, 1s ″, 1s ′ ″) 3) A method according to any one of claims 1 to 7, preferably detected by a distance sensor. An apparatus for joining a first substrate (4o) to a second substrate (4u) at contact surfaces (4k) facing each other of the substrates (4o, 4u),
A first holding device (1, 1 ′, 1 ″, 1 ′ ″) that holds the first substrate (4o) with the first holding surface (1s, 1s ′, 1s ″, 1s ′ ″). , 1 ^IV , 1 ^V , 1 ^VI ) and the second substrate (4 u) by the second holding surface (1 s, 1 s ′, 1 s ″, 1 s ′ ″) 1 ′, 1 ″, 1 ′ ″, 1 ^IV , 1 ^V , 1 ^VI ),
A bending means for bending at least one of the contact surfaces (4k) before contacting the contact surfaces (4k),
Curvature change means for bending changes of said first curved changing means for bending changes of the substrate (4o), and / or the second substrate (4u) is Ri controllable der during bonding,
At least one holding surface (1s, 1s ′, 1s ″, 1s ′ ″) has a raised portion (7, 7 ′, 7 ″, 7 ′ ″, 7 ″ ″) The at least one holding surface (1s, 1s ′, 1s ″, 1s ′ ″) does not have edge elements and / or the ridges (7, 7 ′, 7 ″, 7 ′ ″, 7 ″ ″) is characterized by forming only one ridge in the at least one holding surface (1s, 1s ′, 1s ″, 1s ′ ″) , An apparatus for bonding the first substrate (4o) to the second substrate (4u). The first holding device (1, 1 ′, 1 ″, 1 ′ ″, 1 ^IV , 1 ^V , 1 ^VI ) and / or the second holding device (1, 1 ′, 1 ″, 1 ''', 1 ^IV , 1 ^V , 1 ^VI ) have in particular mechanical bending means and / or fluid pressurization means for adjusting and / or controlling said bending and / or bending changes. The apparatus of claim 9. The first holding device (1, 1 ′, 1 ″, 1 ′ ″, 1 ^IV , 1 ^V , 1 ^VI ) and / or the second holding device (1, 1 ′, 1 ″, 1 ''', 1 ^IV , 1 ^V , 1 ^VI ), in particular in the form of a ring, preferably in an annular shape, on the entire circumference of the holding surface (1s, 1s ′, 1s ″, 1s ′ ″) 11. Device according to claim 9 or 10, in particular comprising fixing means arranged exclusively within the side edges (4os, 4us) of the substrate (4o, 4u).   The fixing means is divided into a plurality of sections, in particular distributed uniformly on the holding surface (1s, 1s ′, 1s ″, 1s ′ ″), preferably arranged concentrically, in particular 12. The device as claimed in claim 11, comprising an individually controllable fixing element (2).   The first holding surface (1s, 1s ′, 1s ″, 1s ′ ″) and / or the second holding surface (1s, 1s ′, 1s ″, 1s ′ ″) are in particular the first A first holding plane of one holding surface (1s, 1s ′, 1s ″, 1s ′ ″) and a second holding surface (1s, 1s ′, 1s ″, 1s ′ ″) Device according to any one of claims 9 to 12, formed by ridges (7, 7 ', 7 ", 7'", 7 "") forming two holding planes. .   Said curvature and / or curvature modification is in particular a curvature measuring means, in particular a sensor, arranged along said first and / or second holding surface (1s, 1s ′, 1s ″, 1s ′ ″), 14. A device according to any one of claims 9 to 13, preferably detectable by a distance sensor.

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