JP2019188480A - Polishing device and substrate treatment apparatus - Google Patents

Abstract

To provide a polishing device that can change specification of a polishing table inexpensively according to an object of temperature control, and to provide a substrate treatment apparatus including the polishing device.SOLUTION: A polishing device includes a polishing table 1 that rotates about a central axis L while a substrate is pressed onto the top face thereof. The polishing table 1 includes: a table 2 forming the top face and having a heat medium channel 4 inside thereof; and a table base 3 for supporting the table 2 so as to be capable of detaching and attaching.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a polishing apparatus and a substrate processing apparatus.

  Conventionally, a CMP (Chemical Mechanical Polishing) apparatus is known as one of substrate processing apparatuses for processing a substrate such as a silicon wafer. The substrate processing apparatus includes a polishing unit (polishing device) that polishes a substrate and a cleaning unit that cleans the substrate. As shown in Patent Document 1, the polishing apparatus includes a polishing table and a polishing head also called a top ring. A polishing pad is attached to the upper surface of the polishing table that rotates.

In such a polishing apparatus, a polishing liquid (liquid) containing abrasive grains such as silica (SiO ₂ ) and ceria (CeO ₂ ) from a polishing liquid nozzle on a rotating polishing table with a polishing pad attached thereto. ) And the substrate held on the lower surface of the polishing head is pressed while rotating on the polishing table (polishing pad). By this pressing, the substrate surface in contact with the polishing pad surface is generated on a desired flat surface by both rotation of the polishing table and the polishing head in the presence of the abrasive liquid.

  The substrate generated on the desired flat surface is transported to the cleaning unit and cleaned. A gas mixture containing an inert gas such as nitrogen gas is supplied from the atomizer nozzle to the upper surface of the polishing pad after the substrate is transferred. Thereby, the polishing pad surface is cleaned and used for polishing the next substrate. In such a polishing process, the temperature of the polishing table rises due to generation of frictional heat accompanying polishing. For this reason, as shown in Patent Document 1, a heat medium flow path for allowing a heat medium such as water to adjust the temperature to pass therethrough is formed in the polishing table.

  A heat medium is supplied to one end side of the heat medium flow path via the shaft portion of the polishing table, and the supplied heat medium flows toward the other end side of the heat medium flow path. Therefore, the polishing table can be cooled or heated while the heat medium flows through the heat medium flow path. The heat medium that has undergone such temperature adjustment is discharged from the other end side of the heat medium flow path, and taken out to the outside via the shaft portion.

  For example, as shown in Patent Document 2, the heat medium is taken in and out of the polishing table using a pipe (pipe) provided in the rotating shaft of the polishing table and provided with a rotary joint at the bottom. That is, a heat medium supply pipe and a heat medium return pipe are attached to the pipe, and the heat medium is connected to and removed from the heat medium supply pipe and the heat medium return pipe via a rotary joint. Has been. In addition, this pipe is also used for the power supply of a sensor provided at the lower part of the polishing table and the piping of a signal conductor.

JP 2007-222965 A Japanese Patent Laid-Open No. 2006-16491

  By the way, the optimum temperature of the upper surface of the polishing table varies depending on the type of substrate and the polishing rate, and there are cases where it is desired to change the heat medium flow path in the polishing table or the material of the polishing table itself according to these specifications. The conventional polishing table is integrated from the upper surface side where the heat medium flow path is formed to the lower surface side connected to the motor, and it is necessary to replace the whole. For this reason, there existed faults, such as increase in manufacturing cost.

  Accordingly, the present invention has been made to solve the above-described drawbacks, and the object thereof is a polishing apparatus capable of changing the specifications of a polishing table at a low cost according to the purpose of temperature control, and the polishing apparatus Is to provide a substrate processing apparatus.

  (1) A polishing apparatus according to one embodiment of the present invention includes a polishing table that rotates around a central axis with a substrate pressed against an upper surface, the polishing table forms the upper surface, and a heat medium flow path therein. And a table base that detachably supports the table.

(2) In the polishing apparatus described in (1) above, a plurality of bolts that removably fix the peripheral portion of the table to the peripheral portion of the table base, and radially inward of the plurality of bolts And one or a plurality of knock pins for positioning the table with respect to the table base.
(3) The polishing apparatus according to (2), further including a cylindrical draining member that covers a split surface between the table and the table base from a radially outer side, wherein the draining member includes the plurality of draining members. The bolt may be detachably attached to the peripheral portion of the polishing table.
(4) In the polishing apparatus described in (1) to (3) above, a cylindrical flange that is rotationally driven by a motor is connected to the lower surface side of the table base, A space for attaching a film thickness measuring device for measuring the film thickness of the substrate may be formed on the lower surface side of the table base.
(5) In the polishing apparatus described in (1) to (4) above, an annular draining protrusion protruding downward may be formed on the lower surface side of the peripheral edge of the table base. Good.
(6) In the polishing apparatus described in (1) to (5) above, a coating layer to which a polishing pad is peelably bonded may be formed on the upper surface of the previous table.
(7) In the polishing apparatus described in (6) above, the coating layer may be a fluororesin coating layer.
(8) In the polishing apparatus described in (6) above, the coating layer may be a glass coating layer.
(9) In the polishing apparatus described in (6) above, the coating layer may be a ceramic coating layer.
(10) In the polishing apparatus described in (6) above, the coating layer may be a diamond coating layer.

  (11) The substrate processing apparatus which concerns on 1 aspect of this invention is a substrate processing apparatus which has the grinding | polishing part which grind | polishes a board | substrate, and the washing | cleaning part which wash | cleans the said board | substrate grind | polished by the said grinding | polishing part, Comprising: The said grinding | polishing part Comprises the polishing apparatus according to the above (1) to (11).

  According to the above aspect of the present invention, since the table having the heat medium flow path is detachably supported by the table base, only the portion of the table having the heat medium flow path is replaced depending on the purpose of temperature control. The specification of the polishing table can be changed at low cost.

It is a lineblock diagram of the polish table with which the polish device concerning one embodiment is provided, and its peripheral structure. It is a top view of the polishing table concerning one embodiment. It is explanatory drawing which shows the internal structure of the shaft which concerns on one Embodiment. It is an enlarged view of the A section of FIG. It is a top view showing the whole substrate processing device composition concerning one embodiment. It is a typical perspective view which shows the whole structure of the grinding | polishing unit shown in FIG. It is sectional drawing which shows the affixing structure of the polishing pad which concerns on one Embodiment.

  Hereinafter, a polishing apparatus and a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. The following embodiments are described by way of example in order to better understand the gist of the invention, and do not limit the present invention unless otherwise specified. In addition, in the drawings used in the following description, in order to make the features of the present invention easier to understand, the main part may be enlarged for convenience, and the dimensional ratios of the respective components are the same as the actual ones. Not necessarily. In addition, in order to make the features of the present invention easier to understand, some parts are omitted for convenience.

(Polishing equipment)
FIG. 1 is a configuration diagram of a polishing table 1 and its peripheral structure provided in a polishing apparatus according to an embodiment. FIG. 2 is a plan view of the polishing table 1 according to one embodiment. FIG. 3 is an explanatory diagram showing the internal structure of the shaft 9 according to an embodiment. FIG. 4 is an enlarged view of a portion A in FIG.
This polishing apparatus is incorporated in a part of a substrate processing apparatus (described later) for processing a semiconductor substrate such as a silicon wafer. This polishing apparatus includes a polishing table 1 and a top ring, but only the portion of the polishing table 1 is shown here.
In the following description, the polishing table 1 and its peripheral structure of the polishing apparatus, which is the main part of the present invention, will be described before the description of the substrate processing apparatus.

  The polishing table 1 shown in FIG. 1 has a top surface formed in a circular shape and rotates around a central axis L passing through the center of the circular shape. The polishing table 1 includes a table 2 positioned on the upper surface side, and a table base 3 on which the table 2 is stacked. A polishing pad is affixed to the upper surface of the table 2, but is omitted here. In the polishing pad, an opening corresponding to a sensor hole 2h provided in the table 2 described later is formed.

  The material of the table 2 is selected based on thermal conductivity, ease of processing, and the like, and is made of, for example, stainless steel, ceramics, or aluminum alloy. The table 2 is formed by vertically joining a first table portion 2a located on the upper side and a second table portion 2b located on the lower side of the first table portion 2a.

  A heat medium flow path 4 is formed in the second table portion 2b. The heat medium channel 4 is a groove formed on the upper surface of the second table portion 2b so as to substantially cover the entire upper surface. The first table portion 2 a is a plate body (lid body) that is joined to the upper surface of the second table portion 2 b and closes the upper surface opening of the groove groove of the heat medium flow path 4. A heat medium (temperature-controlled water or the like) is supplied to the heat medium flow path 4 via a shaft 9 from a rotary joint 9a described later.

  As shown in FIG. 2, the heat medium is supplied from the supply port 2 </ b> A at the center of the table 2 and discharged from the two discharge ports 2 </ b> B at the center of the table 2. Specifically, the heat medium is supplied from the supply port 2 </ b> A and circulates outward in the radial direction of the table 2, and branches into the radial inner side and the radial outer side at the intermediate portion 2 </ b> C. And radiate out from the two radial outlets 2B. Thereby, the temperature of the upper surface of the table 2 can be equalized efficiently.

  In the polishing table 1, since almost the entire upper surface of the table 2 is used for polishing, uniform temperature of the upper surface of the table 2 is important as a polishing condition. Further, uniformizing the temperature of the upper surface of the table 2 is important for extending the life of the polishing table 1 and a polishing pad (not shown). That is, if the temperature of the upper surface of the table 2 cannot be made uniform and the temperature distribution becomes large, the difference in local expansion / contraction of the coating film (not shown) of the table 2 and further between the coating film and the table 2 are increased. This is because a difference in local expansion / contraction increases, which causes cracking and peeling as film deterioration.

  The following materials are suitable for the table 2. For example, when the material of the table 2 is SiC (silicon carbide), the minimum tensile strength is 450 (MPa), the workability is excellent, the mechanical strength is sufficient, and the thermal conductivity is 170 (W / (m).・ K)) is high and suitable for temperature control. The table 2 can also be made of aluminum that is easy to machine. For example, when the material of the table 2 is an A6061P aluminum alloy plate, the minimum tensile strength is 310 (MPa), the workability is excellent, the mechanical strength is sufficient, and the thermal conductivity is 167 (W / (m · K). )) High and suitable for temperature control.

  For example, when the material of the table 2 is an aluminum alloy casting of AC4CH, the minimum tensile strength is 230 (MPa), the workability is excellent, the mechanical strength is sufficient, and the thermal conductivity is 151 (W / ( m · K)) and is suitable for temperature control. In contrast, in the case of SUS304, which is a general mechanical material, the minimum tensile strength is 520 (MPa) and the mechanical strength is sufficient, but the thermal conductivity is 17 (W / (m · K)). It is low, and requires advanced machining such as the formation of the heat medium flow path 4 with a milling machine. Therefore, it cannot be said that the material is excellent in workability, but the material has high toughness and is an option.

  On the upper surface side of the peripheral edge of the table 2, a step 2c is provided. The depth of the step 2c is the sum of the thickness of a flinger 10 (water draining member), which will be described later, and the head height of a bolt 2d for attaching the flinger 10 and the table 2 to the table base 3. It is determined to be below the upper surface position of 2a.

  As shown in FIG. 2, a plurality of bolts 2 d (12 in the illustrated example) are arranged on the same radius of the peripheral edge of the table 2 at a predetermined interval. As shown in FIG. 1, the plurality of bolts 2 d detachably fix the peripheral edge of the table 2 to the peripheral edge of the table base 3 via the flinger 10. That is, the table 2 and the flinger 10 can be detached from the table base 3 by removing these bolts 2d.

  As shown in FIG. 4, a seal washer 2 d 1 (second seal member) is sandwiched between the head of the bolt 2 d and the flinger 10. The seal washer 2d1 prevents liquid on the table 2 from entering the table base 3 through the insertion hole of the flinger 10 through which the bolt 2d is inserted.

  The side surface of the step 2c provided on the table 2 is provided with a concave groove recessed inward in the radial direction, and an O-ring 2e (first seal member) is disposed in the concave groove. The O-ring 2e contacts the inner end surface of the flinger 10 attached to the step 2c. The O-ring 2e seals the radial gap between the flinger 10 and the side surface of the step 2c, and prevents liquid on the table 2 from entering the table base 3 through the gap.

  Returning to FIG. 1, the bottom surface of the table 2 is provided with one or a plurality of knock pin holes 2g on the same radius at predetermined intervals. In FIG. 1, only one knock pin hole 2g is shown among a plurality (for example, three) of knock pin holes 2g. The installation location of the knock pin hole 2g corresponds to a knock pin 3b provided in the table base 3 described later. The table 2 is provided with a sensor hole 2h penetrating in the vertical direction at a position away from the central axis L in the radial direction.

The table base 3 can be made of a material having sufficient rigidity, for example, the above-mentioned SUS304 or ceramics. If it is made of ceramic, it becomes expensive. Moreover, it can also be made from, for example, an aluminum alloy because of its density and ease of processing. For example, the A6061P forging aluminum alloy and the AC4CH aluminum alloy casting described above are suitable.
The surface of the table base 3 that contacts the lower surface of the table 2 is formed in the same circular shape as the table 2. Moreover, when this table base 3 is seen from the front side, it forms an inverted trapezoid. An annular draining projection 3a protruding downward is integrally formed on the lower surface side of the peripheral edge of the table base 3 and radially inward from the fastening position of the bolt 2d.

  On the upper surface of the table base 3, as shown in FIG. 2, one or more knock pins 3 b projecting toward the table 2 at predetermined intervals on the same radius inside the bolt 2 d. It is planted to do. FIG. 1 shows only one knock pin 3b among a plurality (for example, three) of knock pins 3b. These knock pins 3b are provided facing the knock pin holes 2g provided in the table 2 described above. The table 2 and the table base 3 are positioned by inserting the knock pin 3b into the knock pin hole 2g, and are fastened together by the bolt 2d together with the flinger 10 so as to be rotatable around the central axis L. Yes.

  The table base 3 is provided with a sensor mounting portion 3c. The sensor mounting portion 3c is provided at a position facing the sensor hole 2h provided in the table 2 when the knock pin 3b of the table base 3 is inserted into the knock pin hole 2g of the table 2 and both are positioned and stacked. It has been. A wafer film thickness detector 5 (film thickness measuring device) for detecting a flat surface state of a substrate (not shown) to be polished by the polishing table 1 is mounted on the sensor mounting portion 3c. The wafer thickness detector 5 is in watertight contact with the sensor hole 2h.

  A flange 6 is connected to the central portion of the lower surface of the table base 3. The flange 6 consists of a cylindrical body, and the upper end part is being fixed to the table base 3 using the volt | bolt 6a. The length of the flange 6 in the axial direction is determined to be a length extending below the lower end position of the wafer film thickness detector 5 attached to the table base 3. Therefore, the flange 6 also serves to secure a space for attaching the wafer film thickness detector 5 to the table base 3.

  A motor 7 is connected to the lower end of the flange 6. The motor 7 has a hollow motor rotation shaft 7a, and the upper end portion of the motor rotation shaft 7a is fixed to the lower end portion of the flange 6 using bolts 6b. The motor casing 7b of the motor 7 is fixed to the frame 8 on the fixed side of the polishing apparatus. That is, the polishing table 1 is supported on the frame 8 via the motor 7 and the flange 6. When the motor 7 is driven to rotate, the polishing table 1 can rotate the table 2 around the central axis L via the bolt 2d that fixes the motor 7, the flange 6, the table base 3, the knock pin 3b, and the flinger 10. it can.

  Connected to the center of the lower surface portion of the polishing table 1 is an upper end portion of a shaft 9 that passes through a hollow motor rotating shaft 7 a of the motor 7. The lower end portion of the shaft 9 is connected to the rotary joint rotation shaft 9d of the rotary joint 9a via a heat medium flange 9e fixed to the lower end portion of the motor rotation shaft 7a. Therefore, the shaft 9 above the rotary joint 9 a can rotate together with the table 2. A heat medium supply pipe 9b that supplies a heat medium to the shaft 9 side and a heat medium return pipe 9c that returns the heat medium discharged from the shaft 9 side are connected to the rotary joint 9a.

  The shaft 9 includes pipes as shown in FIG. The pipe 9f is disposed concentrically with the central axis L. On both sides of the pipe 9f, a pipe 9g for supplying the heat medium supplied from the heat medium supply pipe 9b of the rotary joint 9a to the heat medium flow path 4 in the table 2 and the heat medium flow path 4 are discharged. A conduit 9h (disposed on the back side in FIG. 3) for discharging the coming heat medium to the heat medium return pipe 9c of the rotary joint 9a is attached.

  The pipe 9f and the upper portions (heads 9j) of the conduits 9g and 9h are connected (inserted) to a bush 3d provided on the bottom side of the table base 3. The head portion 9j is formed of a two-stage cylinder having a small diameter at the top and a large diameter at the bottom, and O-rings (see FIG. 3) at two places above and below the circumference of the small diameter cylinder and one place below the circumference of the large diameter cylinder. The heat medium from the pipe 9g is supplied to the heat medium flow path 4 through a flow path (not shown) from the small diameter cylinder, and is discharged from the heat medium flow path 4. Is discharged from the large-diameter cylinder to the conduit 9h through a flow path (not shown).

  On the other hand, the lower part of the pipe 9f and the conduits 9g and 9h is supported by the heat medium flange 9e. The heat medium flange 9e is fixed to the lower end portion of the motor rotation shaft 7a and is connected to the rotary joint rotation shaft 9d of the rotary joint 9a. Accordingly, when a heat medium is supplied to the heat medium supply pipe 9b of the rotary joint 9a, the supplied heat medium flows through the heat medium flange 9e, the pipe 9g, and the small diameter cylinders of the head 9j in the heat medium flow in the table 2. It can pass through the path 4 and return to the heat medium return pipe 9c of the rotary joint 9a again through the large-diameter column of the head 9j, the pipe line 9h, and the heat medium flange 9e.

  For example, when the temperature of the table 2 has not yet reached a predetermined temperature at the start of operation of the polishing apparatus, the temperature of the table 2 is adjusted so that the temperature of the table 2 is increased, that is, the table 2 is heated. A heat medium may be supplied. When the operation of the polishing apparatus proceeds and the temperature of the table 2 exceeds a predetermined temperature due to frictional heat accompanying polishing, a heat medium may be supplied so as to cool the table 2. In this way, by always adjusting the table 2 to a constant temperature, it is possible to perform substrate polishing with a good yield.

  A branch pipe 9 i is provided on the flange 6. This branch pipe 9i is used for piping of the power line of the wafer thickness detector 5 and the signal conductor. These wires are led to the rotary joint 9a side through the pipe 9f. For this reason, although not shown, a rotary connector mechanism is attached to the lower portion of the rotary joint 9a so that power supply and detection signals can be taken out.

  As described above, the flinger 10 shown in FIG. 1 is provided at the step 2c of the table 2, and the overall shape thereof is the radial direction of the entire side surface of the table 2 and the dividing surface D of the table 2 and the table base 3. It is formed in a cylindrical shape that can be covered from the outside. And the longitudinal cross-sectional shape of the flinger 10 is the form which reversed the L-shaped top and bottom, and the bent part of the upper part of the form is attached to the level | step difference 2c of the table 2. As shown in FIG. Further, the length of the portion vertically lowered from the bent portion is determined so as to extend below the lower end position of the draining protrusion 3 a provided on the table base 3.

Next, the cover 20, the abrasive liquid receiver 30, and the gas-liquid separator 40 attached to the polishing table 1 having the above-described configuration will be described.
The cover 20 is provided on the fixed frame side of a polishing apparatus (not shown), and the entire shape thereof is formed in a cylindrical shape that can cover the entire side surface of the flinger 10 at a position radially outside the flinger 10. . The cover 20 is formed so that the radial gap with the flinger 10 gradually decreases toward the upper surface of the polishing table 1. Specifically, when the gap dimension on the upper surface of the polishing table 1 is S1 and the gap dimension at the lower end of the flinger 10 is S2, the relationship of S1 <S2 is established.

  That is, the cover 20 is located a predetermined distance away from the flinger 10 in the radial direction, and the inner peripheral side thereof is inclined (reduced diameter) so as to be slightly inclined toward the cylindrical central side. In addition, the length of the cylindrical cover 20 in the axial direction is sufficiently longer than the length of the portion of the flinger 10 that is vertically lowered from the bent portion. Therefore, the gap formed between the flinger 10 and the cover 20 forms a kind of orifice structure that becomes narrower as it goes upward.

  The cover 20 is movable in the vertical direction (axial direction) as indicated by a two-dot chain line. This vertical movement is performed by an actuator provided on the fixed frame side of the polishing apparatus (not shown), but can also be performed manually. The solid line in FIG. 4 shows a state in which the cover 20 has moved upward, and is in a state in which the abrasive liquid and gas mixture discharged from the upper surface side of the table 2 can be received. On the other hand, the two-dot chain line in FIG. 4 shows a state where the cover 20 has moved downward. The downward movement of the cover 20 is performed at the time of exchanging the polishing pad affixed to the table 2, maintenance work for the polishing head and the table 2, which is also called a top ring, or the like.

  The abrasive liquid receiver 30 is provided on the fixed frame side of a polishing apparatus (not shown), and has a flange 31 whose upper part opens in an annular shape. As shown in FIG. 4, the outer peripheral wall 31 a on the outer side in the radial direction of the flange 31 is arranged on the outer side in the radial direction with respect to the lower end portion of the cover 20. It can be overlapped with the part. In addition, when the clearance dimension between the cover 20 and the outer peripheral wall 31a when the cover 20 moves upward is S3, there is a relationship of S3 <S1 <S2. S3 should be sufficiently small. Thereby, inflow of the outside air to the inner side of the basket 31 is suppressed, and the suction efficiency of the gas-liquid separation device 40 described later is improved.

  On the other hand, the inner peripheral wall 31 b on the radially inner side of the flange 31 is disposed on the radially inner side with respect to the lower end portion of the flinger 10. The lower end portion of the flinger 10 extends below the upper end portion of the inner peripheral wall 31b, and both overlap. Therefore, a kind of labyrinth structure can be formed by the flinger 10 and the inner peripheral wall 31 b of the abrasive liquid receiver 30. Thereby, it is possible to prevent the gas and liquid from entering the radially inner side of the inner peripheral wall 31 b of the abrasive liquid receiver 30, that is, the lower surface side of the table base 3.

  A drainage basin 32 is provided in a part of the basin 31 so that a liquid such as an abrasive liquid in the basin 31 can be collected. And the liquid collected here is comprised so that it can guide to the gas-liquid separation apparatus 40 shown in FIG. 1 through the discharge pipe 33 provided in the bottom wall of the drainage tub 32. FIG. The upper opening of the drainage tub 32 is closed by a lid member 32a.

  The gas-liquid separation device 40 is configured to be able to separate gas and liquid in the space. The gas-liquid separator 40 is provided with a drain pipe 41 and an exhaust pipe 42. Among these, the drain pipe 41 is provided in the bottom part of the gas-liquid separator 40, and is comprised so that the liquid isolate | separated by the gas-liquid separator 40 can be discharged | emitted to the waste-processing apparatus which is not shown in figure. Further, the exhaust pipe 42 is provided in the upper part of the gas-liquid separator 40. The exhaust pipe 42 is connected to an exhaust processing device (suction device) (not shown).

  When polishing a substrate such as a silicon wafer with the polishing table 1 having the above structure, a polishing pad is attached to the upper surface of the table 2. A substrate is attached to the lower surface of the top ring (polishing head). When the motor 7 is rotationally driven, the table 2 on which the polishing pad is attached rotates through the flange 6 and the table base 3.

A polishing liquid containing abrasive grains such as silica (SiO ₂ ) and ceria (CeO ₂ ) is supplied from a polishing liquid nozzle (not shown) onto the polishing pad, and the upper surface of the polishing pad to which the polishing liquid is supplied Then, the substrate held on the lower surface of the top ring is pressed while rotating. By this pressing, the substrate surface in contact with the polishing pad surface is generated on a desired flat surface by both rotation of the polishing table 1 and the polishing head in the presence of the abrasive liquid.

  When the wafer thickness detector 5 detects that the polished surface of the substrate has been formed to have a desired flat surface, that is, a desired film thickness, the substrate is transferred to the cleaning device of the next substrate processing apparatus and cleaned. Is done. A gas mixture containing an inert gas such as nitrogen gas is supplied from an atomizer nozzle (not shown) onto the rotating polishing pad after the substrate is transferred. Thereby, the upper surface of the polishing pad is cleaned and used for polishing the next substrate to be polished.

  As described above, according to the present embodiment described above, the substrate is pressed against the upper surface and has the polishing table 1 that rotates about the central axis L. The polishing table 1 forms the upper surface, and the heat medium flow therein. It has the table 2 which has the path 4, and the table base 3 which supports the table 2 so that attachment or detachment is possible. According to such a configuration, only the table 2 having the heat medium flow path 4 can be partially exchanged according to the purpose of temperature control, so that the specifications of the polishing table 1 can be changed at low cost. For example, the table 2 can be formed from a material that is more workable than the table base 3 (for example, when the table base 3 is made of stainless steel, the table 2 is made of aluminum, ceramic, etc., which are more workable than stainless steel). It becomes. Moreover, it becomes possible to cope with replacement of the table 2 based on deterioration of the surface of the table 2 due to long-term use (for example, when the material is aluminum, rust is generated).

  Moreover, in this embodiment, as shown in FIG.1 and FIG.2, several volt | bolt 2d which fixes the peripheral part of the table 2 to the peripheral part of the table base 3 so that attachment or detachment is possible, and radial inner side rather than several bolt 2d 1 and one or a plurality of knock pins 3b for positioning the table 2 with respect to the table base 3, the table 2 can be easily detached from the table base 3 together with the flinger 10 by removing the bolt 2d. In addition, since the table 2 is positioned with respect to the table base 3 through not only the plurality of bolts 2d but also one or a plurality of knock pins 3b arranged on the inner side in the radial direction at the time of mounting, the table 2 and the table Even if the split structure of the base 3 is adopted, it can be rotated in the same manner as the integral structure.

  Furthermore, in this embodiment, it has the cylindrical flinger 10 which covers the division surface D of the table 2 and the table base 3 from a radial direction outer side, and the flinger 10 is attached to the peripheral part of the polishing table 1 with the some volt | bolt 2d. Since the attachment is possible, it is possible to prevent the liquid from entering the dividing surface D of the table 2 and the table base 3.

  Further, a cylindrical flange 6 that is rotationally driven by a motor 7 is connected to the lower surface side of the table base 3, and the flange 6 measures the film thickness of the wafer on the lower surface side of the table base 3. A space for mounting the detector 5 is formed. Further, since an annular draining projection 3a protruding downward is formed on the lower surface side of the peripheral edge of the table base 3, a wafer film thickness detector due to the wraparound of liquid to the lower surface side of the table base 3 is formed. 5 can be prevented from being wetted.

(Substrate processing equipment)
Next, the substrate processing apparatus 100 including the polishing apparatus having the above configuration will be described.

FIG. 5 is a plan view showing the overall configuration of the substrate processing apparatus 100 according to an embodiment.
A substrate processing apparatus 100 shown in FIG. 5 is a chemical mechanical polishing (CMP) apparatus that flatly polishes the surface of a substrate W such as a silicon wafer. The substrate processing apparatus 100 includes a rectangular box-shaped housing 102. The housing 102 is formed in a substantially rectangular shape in plan view.

  The housing 102 includes a substrate transfer path 103 extending in the longitudinal direction at the center thereof. A load / unload unit 110 is disposed at one end of the substrate transport path 103 in the longitudinal direction. A polishing unit 120 is disposed on one side of the width direction of the substrate transport path 103 (a direction orthogonal to the longitudinal direction in plan view), and a cleaning unit 130 is disposed on the other side. The substrate transport path 103 is provided with a substrate transport unit 140 that transports the substrate W. The substrate processing apparatus 100 also includes a control unit 150 (control panel) that controls operations of the load / unload unit 110, the polishing unit 120, the cleaning unit 130, and the substrate transport unit 140.

  The load / unload unit 110 includes a front load unit 111 that accommodates the substrate W. A plurality of front load portions 111 are provided on one side surface of the housing 102 in the longitudinal direction. The plurality of front load portions 111 are arranged in the width direction of the housing 102. The front load unit 111 is equipped with, for example, an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod). SMIF and FOUP are sealed containers in which a cassette of the substrate W is housed and covered with a partition wall, and can maintain an environment independent of the external space.

  In addition, the load / unload unit 110 includes two transfer robots 112 that take in and out the substrates W from the front load unit 111, and a travel mechanism 113 that causes the transfer robots 112 to travel along the front load unit 111. . Each transfer robot 112 has two hands on the upper and lower sides, and is used properly before and after the processing of the substrate W. For example, when the substrate W is returned to the front load unit 111, the upper hand is used, and when the unprocessed substrate W is taken out from the front load unit 111, the lower hand is used.

  The polishing unit 120 includes a plurality of polishing units 121 (121A, 121B, 121C, 121D) that polish (planarize) the substrate W. The plurality of polishing units 121 are arranged in the longitudinal direction of the substrate transport path 103. The polishing unit 121 includes a polishing table 123 that rotates a polishing pad 122 having a polishing surface, a top ring 124 that holds the substrate W and polishes the substrate W while pressing the substrate W against the polishing pad 122 on the polishing table 123, A polishing liquid supply nozzle 125 for supplying a polishing liquid or a dressing liquid (for example, pure water) to the polishing pad 122, a dresser 126 for dressing the polishing surface of the polishing pad 122, and a liquid (for example, pure water) An atomizer 127 that mists a mixed fluid of gas (for example, nitrogen gas) or a liquid (for example, pure water) and sprays it on the polishing surface.

  The polishing unit 121 presses the substrate W against the polishing pad 122 by the top ring 124 while supplying the polishing liquid onto the polishing pad 122 from the polishing liquid supply nozzle 125, and further moves the top ring 124 and the polishing table 123 relative to each other. Thus, the substrate W is polished to flatten the surface. In the dresser 126, hard particles such as diamond particles and ceramic particles are fixed to the rotating portion at the tip that comes into contact with the polishing pad 122, and the entire rotating surface of the polishing pad 122 is swung while rotating the rotating portion. Dress uniformly and form a flat polished surface. The atomizer 127 cleans the polishing surface and sharpens the polishing surface by the dresser 126 which is mechanical contact, that is, polishing, by washing away polishing debris and abrasive grains remaining on the polishing surface of the polishing pad 122 with a high-pressure fluid. Achieve surface regeneration.

  The cleaning unit 130 includes a plurality of cleaning units 131 (131A, 131B) for cleaning the substrate W, and a drying unit 132 for drying the cleaned substrate W. A plurality of cleaning units 131 and drying units 132 (a plurality of processing units) are arranged in the longitudinal direction of the substrate transport path 103. A first transfer chamber 133 is provided between the cleaning unit 131A and the cleaning unit 131B. In the first transfer chamber 133, a transfer robot 135 that transfers the substrate W between the substrate transfer unit 140, the cleaning unit 131A, and the cleaning unit 131B is provided. A second transfer chamber 134 is provided between the cleaning unit 131 </ b> B and the drying unit 132. In the second transfer chamber 134, a transfer robot 136 that transfers the substrate W between the cleaning unit 131B and the drying unit 132 is provided.

  The cleaning unit 131A includes, for example, a roll sponge type cleaning module, and primarily cleans the substrate W. The cleaning unit 131B also includes a roll sponge type cleaning module, and performs secondary cleaning of the substrate W. The cleaning unit 131A and the cleaning unit 131B may be the same type or different types of cleaning modules, for example, a pencil sponge type cleaning module or a two-fluid jet type cleaning module. Good. The drying unit 132 includes, for example, a drying module that performs Rotagoni drying (IPA (Iso-Propyl Alcohol) drying). After drying, the shutter 101 a provided on the partition wall between the drying unit 132 and the load / unload unit 110 is opened, and the substrate W is taken out from the drying unit 132 by the transport robot 112.

  The substrate transport unit 140 includes a lifter 141, a first linear transporter 142, a second linear transporter 143, and a swing transporter 144. In the substrate transport path 103, the first transport position TP1, the second transport position TP2, the third transport position TP3, the fourth transport position TP4, the fifth transport position TP5, and the sixth transport are sequentially performed from the load / unload unit 110 side. A position TP6 and a seventh transport position TP7 are set.

  The lifter 141 is a mechanism for transporting the substrate W up and down at the first transport position TP1. The lifter 141 receives the substrate W from the transfer robot 112 of the load / unload unit 110 at the first transfer position TP1. Further, the lifter 141 delivers the substrate W received from the transfer robot 112 to the first linear transporter 142. A shutter 101b is provided in the partition wall between the first transport position TP1 and the load / unload unit 110. When the substrate W is transported, the shutter 101b is opened and the substrate W is received by the lifter 141 from the transport robot 112. Passed.

  The first linear transporter 142 is a mechanism that transports the substrate W among the first transport position TP1, the second transport position TP2, the third transport position TP3, and the fourth transport position TP4. The first linear transporter 142 includes a plurality of transport hands 145 (145A, 145B, 145C, 145D) and a linear guide mechanism 146 that moves each transport hand 145 horizontally at a plurality of heights. The transport hand 145A is moved between the first transport position TP1 and the fourth transport position TP4 by the linear guide mechanism 146. The transport hand 145A is a pass hand for receiving the substrate W from the lifter 141 and delivering it to the second linear transporter 143. The transport hand 145A is not provided with a lifting drive unit.

  The transport hand 145B is moved between the first transport position TP1 and the second transport position TP2 by the linear guide mechanism 146. The transport hand 145B receives the substrate W from the lifter 141 at the first transport position TP1, and delivers the substrate W to the polishing unit 121A at the second transport position TP2. The transport hand 145B is provided with an elevating drive unit, which is raised when the substrate W is transferred to the top ring 124 of the polishing unit 121A, and is lowered after the substrate W is transferred to the top ring 124. In addition, the same raising / lowering drive part is provided also in the conveyance hand 145C and the conveyance hand 145D.

  The transport hand 145C is moved between the first transport position TP1 and the third transport position TP3 by the linear guide mechanism 146. The transport hand 145C receives the substrate W from the lifter 141 at the first transport position TP1, and delivers the substrate W to the polishing unit 121B at the third transport position TP3. The transport hand 145C also functions as an access hand that receives the substrate W from the top ring 124 of the polishing unit 121A at the second transport position TP2 and delivers the substrate W to the polishing unit 121B at the third transport position TP3.

  The transport hand 145D is moved between the second transport position TP2 and the fourth transport position TP4 by the linear guide mechanism 146. The transport hand 145D receives the substrate W from the top ring 124 of the polishing unit 121A or the polishing unit 121B at the second transport position TP2 or the third transport position TP3, and receives the substrate W from the swing transporter 144 at the fourth transport position TP4. It functions as an access hand for passing.

  The swing transporter 144 has a hand that can move between the fourth transport position TP4 and the fifth transport position TP5, and delivers the substrate W from the first linear transporter 142 to the second linear transporter 143. . Also, the swing transporter 144 delivers the substrate W polished by the polishing unit 120 to the cleaning unit 130. A temporary table 147 for the substrate W is provided on the side of the swing transporter 144. The swing transporter 144 places the substrate W received at the fourth transport position TP4 or the fifth transport position TP5 upside down and places it on the temporary placement table 147. The substrate W placed on the temporary placement table 147 is transferred to the first transfer chamber 133 by the transfer robot 135 of the cleaning unit 130.

  The second linear transporter 143 is a mechanism that transports the substrate W among the fifth transport position TP5, the sixth transport position TP6, and the seventh transport position TP7. The second linear transporter 143 includes a plurality of transport hands 148 (148A, 148B, 148C) and a linear guide mechanism 149 that moves each transport hand 145 horizontally at a plurality of heights. The transport hand 148A is moved between the fifth transport position TP5 and the sixth transport position TP6 by the linear guide mechanism 149. The transport hand 145A functions as an access hand that receives the substrate W from the swing transporter 144 and delivers it to the polishing unit 121C.

  The transport hand 148B moves between the sixth transport position TP6 and the seventh transport position TP7. The transport hand 148B functions as an access hand for receiving the substrate W from the polishing unit 121C and delivering it to the polishing unit 121D. The transport hand 148C moves between the seventh transport position TP7 and the fifth transport position TP5. The transport hand 148C receives the substrate W from the top ring 124 of the polishing unit 121C or the polishing unit 121D at the sixth transport position TP6 or the seventh transport position TP7, and receives the substrate W from the swing transporter 144 at the fifth transport position TP5. It functions as an access hand for passing. Although not described, the operation of the transfer hand 148 when the substrate W is transferred is the same as the operation of the first linear transporter 142 described above.

  Also in the substrate processing apparatus 100 having the above configuration, by applying the above-described polishing table 1 of the present invention to the polishing table 123 of the polishing unit 121 (polishing apparatus), the specification of the polishing table 123 can be set according to the purpose of temperature control. It can be changed cheaply.

(Polishing pad attachment structure)
Next, a structure for attaching the polishing pad 122 attached to the polishing table 123 configured as described above will be described.

FIG. 6 is a schematic perspective view showing the overall configuration of the polishing unit 121 shown in FIG.
As shown in FIG. 6, the polishing unit 121 includes a polishing table 123 and a top ring 124 that holds a substrate W that is an object to be polished and presses it against the polishing pad 122 on the polishing table 123. The polishing table 123 is connected to a hollow table shaft 200 (the flange 6 shown in FIG. 1 described above). The table shaft 200 is connected to a polishing table rotation motor (the motor 7 shown in FIG. 1 described above (not shown in FIG. 6)), and the polishing table 123 can rotate integrally with the table shaft 200. Note that the polishing table 123 shown in FIG. 6 is based on the structure of the polishing table 1 described above (the divided structure (stacked structure) of the tables 2). However, the bonding structure of the polishing pad 122 is a conventional polishing table ( The present invention can also be applied to an integrated structure (single layer structure) of the table 2.

A polishing pad 122 is affixed to the upper surface of the polishing table 123, and the surface of the polishing pad 122 constitutes a polishing surface for polishing the substrate W. The polishing pad 122 can be roughly divided into three types: a hard foam type, a nonwoven fabric type, and a suede type.
The rigid foam type is a pad including pores, and is generally made of polyurethane. The nonwoven fabric type is obtained by impregnating a nonwoven fabric such as polyester with urethane or the like. The suede type is coated on the base material by wet molding. As the base material, there are a product using the same non-woven fabric as that used for the non-woven pad and a product using PET (polyethylene terephthalate). is there. These substrates were manufactured by applying a DMF (dimethylformamide) solution of urethane resin to replace the coagulant (water) and DMF, and the pores were exposed on the surface.

  A polishing liquid supply nozzle 125 is installed above the polishing table 123, and the polishing liquid (slurry) is supplied to the polishing pad 122 on the polishing table 123 by the polishing liquid supply nozzle 125. . Inside the polishing table 123 is provided a heat exchange medium flow path (the heat medium flow path 4 shown in FIG. 1 (not shown in FIG. 6)). By flowing cooling water as a heat exchange medium through the flow path for the heat exchange medium, heat exchange is performed between the heat exchange medium and the polishing table 123 to prevent thermal deformation of the polishing table 123 due to frictional heat during polishing. In addition, the surface temperature of the polishing table 123 is adjusted. Therefore, as shown in FIG. 6, a rotary joint 9a is installed at the lower end of the table shaft 200, and cooling water flows from the outside through the cooling water pipe (not shown) and the rotary joint 9a in the polishing table 123. It is supplied to the road.

  The top ring 124 is connected to the top ring shaft 201, and the top ring shaft 201 moves up and down with respect to the support arm 202. By moving the top ring shaft 201 up and down, the entire top ring 124 is moved up and down relative to the support arm 202 for positioning. The top ring shaft 201 is rotated by driving a top ring rotation motor (not shown). The top ring 124 rotates around the top ring shaft 201 by the rotation of the top ring shaft 201.

  The top ring 124 can hold the substrate W on the lower surface thereof. The support arm 202 is configured to be pivotable about the shaft 203, and the substrate transfer position (see the second transfer position TP2, the third transfer position TP3, the sixth transfer position TP6, and the seventh transfer position TP7 shown in FIG. 5). The substrate W transported to () is vacuum-sucked. The top ring 124 holding the substrate W on the lower surface can be moved above the polishing table 123 by turning the support arm 202.

The top ring 124 holds the substrate W on the lower surface and presses the substrate W against the surface of the polishing pad 122. At this time, the polishing table 123 and the top ring 124 are rotated, and the polishing liquid (slurry) is supplied onto the polishing pad 122 from the polishing liquid supply nozzle 125 provided above the polishing table 123. As the polishing liquid, a polishing liquid containing silica (SiO ₂ ) or ceria (CeO ₂ ) as abrasive grains can be used. In this way, the substrate W is polished by supplying the polishing liquid onto the polishing pad 122 and pressing the substrate W against the polishing pad 122 by the top ring 124 to move the substrate W and the polishing pad 122 relative to each other. During polishing, there may be a relative movement (for example, swinging (turning)) other than the rotation of the substrate W and the polishing pad 122. Thereby, deterioration of the same portion of the polishing pad 122 is prevented.

  By the way, as shown in FIG. 7 described later, the polishing pad 122 is bonded to the table 2 via an adhesive layer 211. When a large number of samples (substrate W) are polished, the polishing pad 122 deteriorates in polishing performance, uneven polishing surface, accumulation of foreign matters, and the like. Therefore, the polishing pad 122 is periodically or according to the number of polishing. It is necessary to replace it. At that time, if the bonding of the polishing pad 122 is strong, a great deal of labor and time are required for the replacement work. For this reason, the polishing table 123 of this embodiment has a structure for attaching the polishing pad 122 as shown in FIG.

FIG. 7 is a cross-sectional view illustrating a structure for attaching a polishing pad 122 according to an embodiment.
As shown in FIG. 7, a coating layer 210 to which the polishing pad 122 is detachably bonded is formed on the upper surface of the table 2 that forms the polishing table 123. An adhesive layer 211 is formed on the back surface 122b of the polishing pad 122 opposite to the polishing surface 122a. In other words, the coating layer 210 is interposed between the table 2 and the polishing pad 122, and the adhesive layer 211 is interposed between the coating layer 210 and the polishing pad 122. That is, the adhesive layer 211 may be formed on the upper surface of the coating layer 210. Here, “adhesion” of the adhesive layer 211 includes “adhesion”.

  The adhesive forming the adhesive layer 211 is not particularly limited, and examples thereof include a pressure sensitive adhesive and a hot melt adhesive, and a hot melt adhesive is preferable. An adhesive agent may be used individually by 1 type, and 2 or more types may be mixed and used for it. It does not specifically limit as a hot melt adhesive, A well-known thing can be especially used without a restriction | limiting. In addition to hot melt adhesives and pressure sensitive adhesives, two-component curing type epoxy adhesives, silicone adhesives, etc. are used in place of or in combination with hot melt adhesives and pressure sensitive adhesives. May be. In addition to the pressure sensitive adhesive and the hot melt adhesive, an acrylic adhesive, a silicone adhesive, and a double-sided tape may be used.

  The material forming the table 2 may be the above-described metal (aluminum (alloy), stainless steel), ceramic, or synthetic resin. The surface of the aluminum (alloy) table 2 may be covered with aluminum oxide or a nickel coating. The surface hardness of the table 2 can be increased by the aluminum oxide and nickel coating. In addition, when the table 2 is made of aluminum (alloy), the aluminum (alloy) has good thermal conductivity if there is a heat medium flow path 4 for temperature adjustment and other mechanisms (such as a temperature control device) in the table 2. Good temperature control and can contribute to stabilization of polishing performance. Further, a flow path for discharging the slurry may be formed on the upper surface of the table 2.

  The coating layer 210 is formed of a low-adhesive material so that the polishing pad 122 can be replaced with light labor in order to perform the replacement operation of the polishing pad 122 simply, efficiently and safely. Has been. Here, “low adhesion” of the low adhesion material means “what makes it easy to peel off the polishing pad 122”, and means that the adhesion to a specific material is high or low. It is not a thing. Further, the coating layer 210 also has a function of favorably maintaining the affixed state of the polishing pad 122 by preventing contact between the above-described oxide film and the polishing liquid and preventing corrosion of the table 2.

  Examples of the low adhesive material for forming the coating layer 210 include fluororesin (PTFE (polytetrafluoroethylene), PCTFE (polychlorotrifluoroethylene), PVDF (polyvinylidene fluoride), FEP (tetrafluoroethylene / hexafluoride). Propylene copolymer) and PFA (perfluoroalkoxy fluororesin)) are preferred. Depending on the polishing conditions (polishing liquid, type of polishing pad, etc.), a polyamide resin, a phenol resin, or a polyester resin may be used. Examples of the coating means for the coating layer 210 include electrostatic spraying, hot melt spraying, and cementation.

  The thickness of the coating layer 210 is preferably 100 μm or less, for example. In addition, the surface roughness of the coating layer 210 is controlled in consideration of the adhesiveness of the coating material and the peeling characteristics of the adhesive that can be used for the material, so that the adhesion or adhesion to the polishing pad 122 is sufficient. It is preferable. Further, the coating layer 210 may have a plurality of layers such as not only one layer but also two or three layers. According to such a coating layer 210 (fluororesin coating layer), since the friction coefficient of the surface is low, it becomes easy to peel off the polishing pad 122 from the upper surface of the table 2. For this reason, the polishing pad 122 can be replaced more safely, quickly, and easily.

  The coating layer 210 may be a glass coating layer, a ceramic coating layer, or a diamond coating layer. Since these coating layers 210 have a harder surface and less deformation than the above-described resin coating layers such as the fluororesin coating layer, the polishing pad 122 can be easily peeled off and the residual adhesive can be easily removed. In addition, since the surface is harder and the deformation is smaller than that of the resin coating layer, it is possible to extend the life of the table 2 with respect to the repeated replacement of the polishing pad 122.

  Furthermore, in the case of the resin coating layer, it takes time to remove the coating layer and repaint (attach) during maintenance of the coating surface (the upper surface of the table 2). Only by performing it, the flatness and cleanliness of the coating surface can be ensured and the life of the table 2 can be extended. The polishing method for maintaining the coating surface is preferably performed by attaching a polishing member dedicated to polishing the coating surface to the dresser 126 (see FIG. 5) of the polishing unit 120 without carrying in a separate polishing apparatus.

  Thus, according to this embodiment described above, the polishing apparatus for flattening the substrate W, the polishing pad 122 having the polishing surface 122a, and the substrate W held (pressed) against the polishing surface 122a. Top ring 124, moving device (top ring rotating motor, support arm 202, etc.) for moving table 2 (polishing table 123) and top ring 124 relative to each other to polish substrate W, and polishing pad And a table 2 having a first surface (upper surface) for 122 adhesion, the table 2 including a coating layer 210 of a low-adhesive material on its upper surface, thereby adopting a polishing pad 122 can be simply and efficiently performed safely and with a light effort.

  As described above, according to the present invention, various samples (substrate W) are moved relative to the polishing pad 122 by using the polishing liquid that matches each sample. However, in the polishing apparatus that polishes, the life of the polishing table 123 and the polishing pad 122 is increased. In order to extend the service life of the table 2, the polishing performance of the table 2 is also taken into consideration, and the polishing table 1 (see FIG. 1) having a replaceable upper surface according to the present invention, that is, a divided structure of the table 2 is preferably used. Further, the division structure of the table 2 is a structure for positively discharging the used polishing liquid from the polishing table 1 and a structure for attaching the outer peripheral portion of the polishing table 1 so as not to cause material deterioration due to the polishing liquid or mixing of the polishing liquid (see FIG. 1 and FIG. 4), it is possible to prevent the polishing liquid from entering the dividing surface D. Furthermore, when the polishing pad 122 is used, it is necessary to satisfy both of the contradictions of maintenance of its function (adhesiveness) and ease of replacement (peelability). For this purpose, considering the resistance against the polishing liquid of the polishing pad 122 and the table 2 under the polishing pad, a coating layer 210 is provided as shown in FIG. 7, and it is particularly preferable to use fluororesin, glass, ceramic, or diamond.

  Although preferred embodiments of the present invention have been described and described above, it should be understood that these are exemplary of the present invention and should not be considered as limiting. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the invention. Accordingly, the invention is not to be seen as limited by the foregoing description, but is limited by the scope of the claims.

  For example, in the above-described embodiment, the configuration in which the polishing apparatus of the present invention is applied to the polishing unit 120 of the substrate processing apparatus 100 (chemical mechanical polishing (CMP) apparatus) is exemplified. The present invention can also be applied to a substrate processing apparatus (for example, a back surface polishing apparatus, a bevel polishing apparatus, an etching apparatus, or a plating apparatus).

DESCRIPTION OF SYMBOLS 1,123 ... Polishing table, 2 ... Table, 2A ... Supply port, 2B ... Discharge port, 2C ... Intermediate | middle part, 2a ... 1st table part, 2b ... 2nd table part, 2c ... Level | step difference, 2d ... Bolt, 2d1 ... Seal washer, 2e ... O-ring, 2g ... knock pin hole, 2h ... sensor hole, 3 ... table base, 3a ... draining projection, 3b ... knock pin, 3c ... sensor mounting part, 3d ... bush, 4 ... heat medium flow path, DESCRIPTION OF SYMBOLS 5 ... Wafer film thickness detector (film thickness measuring apparatus), 6 ... Flange, 6a ... Bolt, 6b ... Bolt, 7 ... Motor, 7a ... Motor rotating shaft, 7b ... Motor casing, 8 ... Frame, 9 ... Shaft, 9a ... Rotary joint, 9b ... Heat medium supply pipe, 9c ... Pipe, 9d ... Rotary joint rotating shaft, 9e ... Heat medium flange, 9f ... Pipe, 9g ... Pipe, 9h ... Pipe, 9 ... branch pipe, 9j ... head, 10 ... flinger, 20 ... cover, 31 ... spear, 31a ... outer peripheral wall, 31b ... inner peripheral wall, 32 ... drainage spear, 32a ... lid member, 33 ... discharge pipe, 40 ... air Liquid separation device, 41 ... Drain pipe, 42 ... Exhaust pipe, 100 ... Substrate processing apparatus, 120 ... Polishing unit, 122 ... Polishing pad, 122a ... Polished surface, 122b ... Back side, 124 ... Top ring, 125 ... Supply of polishing liquid Nozzle, 130 ... cleaning section, 200 ... table shaft, 201 ... top ring shaft, 202 ... support arm, 203 ... shaft, 210 ... coating layer, 211 ... adhesive layer, D ... split surface, L ... center axis, W ... substrate

Claims (11)

The substrate is pressed on the upper surface, and has a polishing table that rotates around the central axis.
The polishing table is
A table forming the upper surface and having a heat medium flow path therein;
And a table base that detachably supports the table. A plurality of bolts for removably fixing the peripheral edge of the table to the peripheral edge of the table base;
The polishing apparatus according to claim 1, further comprising: one or a plurality of knock pins that position the table with respect to the table base on a radially inner side than the plurality of bolts. It has a cylindrical draining member that covers the dividing surface of the table and the table base from the outside in the radial direction,
The polishing apparatus according to claim 2, wherein the draining member is detachably attached to a peripheral portion of the polishing table by the plurality of bolts. A cylindrical flange that is rotationally driven by a motor is connected to the lower surface side of the table base,
The said flange forms the space for attaching the film thickness measuring apparatus which measures the film thickness of the said board | substrate on the lower surface side of the said table base, The Claim 1 characterized by the above-mentioned. The polishing apparatus as described.   The polishing apparatus according to claim 1, wherein an annular draining protrusion protruding downward is formed on the lower surface side of the peripheral edge of the table base.   The polishing apparatus according to claim 1, wherein a coating layer to which a polishing pad is detachably bonded is formed on an upper surface of the table.   The polishing apparatus according to claim 6, wherein the coating layer is a fluororesin coating layer.   The polishing apparatus according to claim 6, wherein the coating layer is a glass coating layer.   The polishing apparatus according to claim 6, wherein the coating layer is a ceramic coating layer.   The polishing apparatus according to claim 6, wherein the coating layer is a diamond coating layer. A polishing section for polishing the substrate;
A substrate processing apparatus having a cleaning unit for cleaning the substrate polished by the polishing unit,
The said grinding | polishing part is equipped with the grinding | polishing apparatus as described in any one of Claims 1-10, The substrate processing apparatus characterized by the above-mentioned.

Images