JP2019184230A - Organic film formation device, organic film formation system and organic film formation method - Google Patents

Abstract

An organic film forming apparatus, an organic film forming system, and an organic film forming method capable of suppressing the generation of sublimates even when a solution containing an organic material and a solvent is heated in an environment at a pressure lower than the atmospheric pressure. It is to provide. An organic film forming apparatus according to an embodiment includes: a chamber capable of maintaining an atmosphere reduced in pressure below atmospheric pressure; an exhaust unit capable of exhausting the inside of the chamber; and a substrate provided in the chamber. A processing region where a work having an organic material and a solvent applied to the surface of the substrate is supported, a heating unit provided inside the chamber and heating the work, and the exhaust gas And a control unit for controlling the heating unit. The control unit controls the exhaust unit to apply electric power to the heating unit after the internal pressure of the chamber becomes equal to or less than a predetermined value. [Selection] Figure 2

Description

  Embodiments described herein relate generally to an organic film forming apparatus, an organic film forming system, and an organic film forming method.

  There is a technique for forming an organic film on a substrate by applying a solution containing an organic material and a solvent on the substrate and heating the solution. For example, in the manufacture of liquid crystal display panels, a varnish containing polyamic acid is applied to the surface of a transparent electrode or the like provided on a transparent substrate, imidized to form a polyimide film, and the resulting film is rubbed Thus, an alignment film is formed. In the production of a flexible resin substrate, a varnish containing polyamic acid is applied to the surface of a support substrate such as a glass substrate, imidized to form a polyimide film, and then peeled off from the support substrate. At this time, the substrate coated with the varnish containing polyamic acid is heated to imidize the polyamic acid. In addition, a substrate coated with a solution containing an organic material and a solvent is heated to evaporate the solvent, thereby forming an organic film on the substrate.

Here, there is a case where the organic film is simply formed inside a chamber whose pressure is reduced from the atmospheric pressure (see, for example, Patent Document 1).
Here, when a solution containing an organic material and a solvent is simply heated inside a chamber whose pressure is reduced from the atmospheric pressure, vapor containing sublimates is generated. If the sublimate is generated inside the chamber, the generated sublimate may adhere to the formed organic film, and the quality of the organic film may be deteriorated.
Therefore, it has been desired to develop a technique capable of suppressing the generation of sublimates even when a solution containing an organic material and a solvent is heated in an environment reduced in pressure from atmospheric pressure.

Japanese Patent Laid-Open No. 9-320949

  The problem to be solved by the present invention is an organic film forming apparatus and an organic film forming apparatus capable of suppressing generation of sublimation even when a solution containing an organic material and a solvent is heated in an environment reduced in pressure from atmospheric pressure. A system and an organic film forming method are provided.

  An organic film forming apparatus according to an embodiment includes a chamber capable of maintaining an atmosphere depressurized from an atmospheric pressure, an exhaust unit capable of exhausting the interior of the chamber, a substrate provided in the chamber, and the substrate A processing region in which a workpiece having a solution containing an organic material and a solvent applied to the surface is supported, a heating unit provided inside the chamber and heating the workpiece, the exhaust unit, and the A control unit that controls the heating unit. The control unit controls the exhaust unit to apply electric power to the heating unit after the internal pressure of the chamber becomes a predetermined value or less.

  According to an embodiment of the present invention, an organic film forming apparatus and an organic film forming system capable of suppressing generation of sublimation even when a solution containing an organic material and a solvent is heated in an environment reduced in pressure from atmospheric pressure. And an organic film forming method.

It is a schematic diagram for illustrating the organic film formation system which concerns on this Embodiment. It is a model perspective view for illustrating an organic film forming device. It is a model perspective view for illustrating a solution application device. It is a schematic cross section for illustrating a temporary baking apparatus. It is a schematic graph for demonstrating the decompression process of the internal pressure of a chamber, and the heating process of a board | substrate.

Hereinafter, embodiments will be illustrated with reference to the drawings. In addition, in each drawing, the same code | symbol is attached | subjected to the same component and detailed description is abbreviate | omitted suitably.
In addition, the X direction, Y direction, and Z direction in each drawing represent three directions orthogonal to each other. The vertical direction in this specification can be the Z direction.
FIG. 1 is a schematic view for illustrating an organic film forming system 200 according to the present embodiment.
As shown in FIG. 1, the organic film forming system 200 includes an organic film forming device 1, a first storage unit 2, a second storage unit 3, a transport unit 4, a solution coating device 5, a temporary baking device 6, and A control unit 7 is provided.

FIG. 2 is a schematic perspective view for illustrating the organic film forming apparatus 1.
As shown in FIG. 2, the organic film forming apparatus 1 includes a chamber 10, an exhaust unit 20, and a processing unit 30.
The chamber 10 has a box shape. The chamber 10 has an airtight structure capable of maintaining an atmosphere whose pressure is reduced from the atmospheric pressure. There is no particular limitation on the external shape of the chamber 10. The external shape of the chamber 10 can be a rectangular parallelepiped, for example. The chamber 10 can be formed from, for example, a metal such as stainless steel.

A flange 11 can be provided at one end of the chamber 10. The flange 11 can be provided with a sealing material 12 such as an O-ring. The opening of the chamber 10 on the side where the flange 11 is provided can be opened and closed by an open / close door 13. The opening / closing door 13 is pressed against the flange 11 (sealing material 12) by a driving device (not shown), so that the opening of the chamber 10 is closed so as to be airtight. The opening / closing door 13 is separated from the flange 11 by a driving device (not shown), so that the workpiece 100 can be carried in or out through the opening of the chamber 10.
The workpiece 100 can be a substrate coated with a solution containing an organic material and a solvent, or can be a substrate obtained by evaporating the solvent of the solution by the temporary baking apparatus 6.
The substrate can be, for example, a glass substrate or a semiconductor wafer. However, the substrate is not limited to those illustrated.

  A flange 14 may be provided at the other end of the chamber 10. The flange 14 may be provided with a sealing material 12 such as an O-ring. An opening of the chamber 10 on the side where the flange 14 is provided can be opened and closed by a lid 15. For example, the lid 15 can be detachably provided on the flange 14 using a fastening member such as a screw. When performing maintenance or the like, the lid 15 is removed to expose the opening of the chamber 10 on the side where the flange 14 is provided.

  A cooling unit 16 can be provided on the outer wall of the chamber 10. A cooling water supply unit (not shown) is connected to the cooling unit 16. The cooling unit 16 can be, for example, a water jacket. If the cooling part 16 is provided, it can suppress that the outer wall temperature of the chamber 10 becomes higher than predetermined | prescribed temperature.

The exhaust unit 20 exhausts the inside of the chamber 10. The exhaust unit 20 includes a first exhaust unit 21 and a second exhaust unit 22.
The first exhaust unit 21 is connected to an exhaust port 17 provided on the bottom surface of the chamber 10. The first exhaust unit 21 includes an exhaust pump 21a and a pressure control unit 21b.
The exhaust pump 21a can be, for example, a dry vacuum pump.
The pressure control unit 21b is provided between the exhaust port 17 and the exhaust pump 21a. The pressure controller 21b controls the internal pressure of the chamber 10 to be a predetermined pressure based on the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber 10. The pressure controller 21b can be, for example, an APC (Auto Pressure Controller).

The second exhaust unit 22 is connected to an exhaust port 18 provided on the bottom surface of the chamber 10. The second exhaust unit 22 includes an exhaust pump 22a and a pressure control unit 22b.
The exhaust pump 22a can be, for example, a turbo molecular pump (TMP).
The second exhaust unit 22 has an exhaust capability capable of exhausting to a high vacuum molecular flow region.
The pressure control unit 22b is provided between the exhaust port 18 and the exhaust pump 22a. The pressure control unit 22b controls the internal pressure of the chamber 10 to be a predetermined pressure based on the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber 10. The pressure control unit 22b can be, for example, APC.

Here, it is possible to provide only the second exhaust part 22 without providing the first exhaust part 21. However, if the first exhaust part 21 is provided, the time required to reduce the pressure to a desired pressure can be shortened.
For example, when the pressure inside the chamber 10 is reduced, first, the internal pressure of the chamber 10 is set to about 10 Pa by the first exhaust part 21. Next, the internal pressure of the chamber 10 is set to about 10 Pa to 1 × 10 ⁻² Pa by the second exhaust unit 22. In this way, the time required to reduce the pressure to a desired pressure can be shortened.
In other words, the first exhaust unit 21 is an exhaust pump that performs rough exhaust from atmospheric pressure to a predetermined internal pressure. Therefore, the first exhaust part 21 has a large displacement. The second exhaust unit 22 is an exhaust pump that exhausts to a predetermined lower internal pressure after completion of roughing exhaust.

The exhaust port 17 connected to the first exhaust unit 21 and the exhaust port 18 connected to the second exhaust unit 22 are arranged on the bottom surface of the chamber 10. Therefore, a downflow airflow toward the bottom surface of the chamber 10 can be formed in the chamber 10 and the processing unit 30. As a result, the sublimate containing the organic material, which is generated by heating the workpiece 100 to which the solution containing the organic material and the solvent is applied, is easily discharged out of the chamber 10 along the downflow airflow.
Thereby, it can suppress that a sublimate adheres to the workpiece | work 100. FIG. As will be described later, if a solution containing an organic material and a solvent is dried and then heated, generation of sublimates can be significantly suppressed.

  Further, if the exhaust port 17 connected to the first exhaust unit 21 having a large exhaust amount is disposed at the center portion of the bottom surface of the chamber 10, the chamber 10 faces the center portion of the chamber 10 when viewed in plan. A uniform air flow can be formed. As a result, the sublimation product can be discharged without the retention of the sublimation product due to the uneven flow of the airflow. Therefore, it is possible to suppress the sublimate from adhering to the workpiece 100.

The processing unit 30 includes a frame 31, a heating unit 32, a work support unit 33, a soaking unit 34, a soaking plate support unit 35, and a cover 36.
Inside the processing unit 30, a processing area 30a and a processing area 30b are provided. The processing areas 30a and 30b are spaces for processing the workpiece 100. The workpiece 100 is supported inside the processing areas 30a and 30b. Between the upper soaking plate 34a and the lower soaking plate 34b are processing regions 30a and 30b on which the workpiece 100 is supported. The processing area 30b is provided above the processing area 30a. In addition, although the case where two processing areas were provided was illustrated, it is not necessarily limited to this. Only one processing region may be provided. It is also possible to provide three or more processing regions. In the present embodiment, a case where two processing regions are provided is illustrated as an example, but the case where one processing region and three or more processing regions are provided can be considered similarly.

  The processing regions 30 a and 30 b are provided between the heating unit 32 and the heating unit 32. The treatment regions 30a and 30b are surrounded by a soaking part 34 (upper soaking plate 34a, lower soaking plate 34b, side soaking plate 34c, and side soaking plate 34d).

The processing regions 30a, 30b and the space inside the chamber 10 are connected via a gap provided between the upper soaking plates 34a and between the lower soaking plates 34b. Therefore, when the workpiece 100 is heated in the processing regions 30a and 30b, the pressure in the space between the inner wall of the chamber 10 and the processing unit 30 is reduced together with the space inside the processing regions 30a and 30b. If the pressure in the space between the inner wall of the chamber 10 and the processing unit 30 is reduced, heat released from the processing regions 30a and 30b to the outside can be suppressed. That is, the heat storage efficiency is improved. Therefore, the electric power applied to the heater 32a can be reduced. Moreover, since it can suppress that the temperature of the heater 32a becomes more than predetermined temperature, the lifetime of the heater 32a can be lengthened.
Moreover, since the heat storage efficiency is improved, a desired temperature increase can be obtained even in a process that requires a rapid temperature increase. Moreover, since it can suppress that the temperature of the outer wall of the chamber 10 becomes high, the cooling part 16 can be simplified.

  The frame 31 has a frame structure made of an elongated plate material or a shape steel. The external shape of the frame 31 can be the same as the external shape of the chamber 10. The external shape of the frame 31 can be a rectangular parallelepiped, for example.

  A plurality of heating units 32 are provided. The heating unit 32 can be provided below the processing regions 30a and 30b and above the processing regions 30a and 30b. The heating unit 32 provided below the processing regions 30a and 30b serves as a lower heating unit. The heating part 32 provided in the upper part of the process area | regions 30a and 30b turns into an upper heating part. The lower heating unit faces the upper heating unit. When a plurality of processing regions are provided so as to overlap in the vertical direction, the upper heating unit provided in the lower processing region can also be used as the lower heating unit provided in the upper processing region.

For example, the lower surface (back surface) of the workpiece 100 supported by the processing region 30a is heated by the heating unit 32 provided at the lower portion of the processing region 30a. The upper surface of the workpiece 100 supported by the processing region 30a is heated by the heating unit 32 that is also used by the processing region 30a and the processing region 30b. The lower surface (back surface) of the workpiece 100 supported by the processing region 30b is heated by the heating unit 32 that is also used as the processing region 30a and the processing region 30b. The upper surface of the workpiece 100 supported by the processing region 30b is heated by the heating unit 32 provided on the upper portion of the processing region 30b.
In this way, since the number of heating units 32 can be reduced, it is possible to reduce power consumption, manufacturing cost, and space saving.

Each of the plurality of heating units 32 includes at least one heater 32a and a pair of holders 32b. In the following, a case where a plurality of heaters 32a are provided will be described.
The pair of holders 32b are provided so as to extend in the longitudinal direction (X direction in FIG. 1) of the processing regions 30a and 30b.
The heater 32a has a rod shape and is provided so as to extend between the pair of holders 32b in the Y direction.
The plurality of heaters 32a can be provided side by side in the direction in which the holder 32b extends. For example, the plurality of heaters 32a can be provided side by side in the longitudinal direction (X direction in FIG. 1) of the processing regions 30a and 30b. The plurality of heaters 32a are preferably provided at equal intervals. The heater 32a can be, for example, a sheathed heater, a far infrared heater, a far infrared lamp, a ceramic heater, a cartridge heater, or the like. Various heaters can be covered with a quartz cover. In this specification, the term “bar heater” includes various heaters covered with a quartz cover.

  However, the heater 32a is not limited to the illustrated one. The heater 32a only needs to be capable of heating the workpiece 100 in an atmosphere reduced in pressure from atmospheric pressure. That is, the heater 32a only needs to use heat energy by radiation.

  The specifications, number, interval, and the like of the plurality of heaters 32a in the upper heating unit and the lower heating unit can be appropriately determined according to the composition of the solution to be heated (solution heating temperature), the size of the workpiece 100, and the like. The specifications, number, interval, and the like of the plurality of heaters 32a can be determined as appropriate by performing simulations and experiments. In addition, “presenting a bar shape” is not limited to a cross-sectional shape, and includes a columnar shape, a prismatic shape, and the like.

The workpiece 100 is heated by the upper heating unit and the lower heating unit. The heater 32a provided in the lower heating unit is separated from the heater 32a provided in the upper heating unit. The upper soaking plate 34a is provided between the heater 32a provided in the upper heating part and the heater 32a provided in the lower heating part. The lower soaking plate 34b is provided between the upper soaking plate 34a and the heater 32a provided in the lower heating unit.
The workpiece 100 is heated in the processing regions 30a and 30b via the upper soaking plate 34a and the lower soaking plate 34b. Here, the vapor containing the sublimated product generated when the solution is heated tends to adhere to an object having a temperature lower than the temperature of the workpiece 100 to be heated. However, the upper soaking plate 34a and the lower soaking plate 34b are heated. Therefore, the sublimate is suppressed from adhering to the upper soaking plate 34a and the lower soaking plate 34b, and is discharged out of the chamber 10 along the downflow airflow described above. Thereby, it can suppress that a sublimate adheres to the workpiece | work 100. FIG. Moreover, since the workpiece | work 100 is heated from both surfaces, it becomes easy to make the workpiece | work 100 high temperature.

  The pair of holders 32b are provided to face each other in a direction orthogonal to the direction in which the plurality of heaters 32a are arranged. One holder 32 b is fixed to the end surface of the frame 31 on the door 13 side. The other holder 32b is fixed to the end surface of the frame 31 opposite to the opening / closing door 13 side. The pair of holders 32b can be fixed to the frame 31 using a fastening member such as a screw, for example. The pair of holders 32b holds a non-heat generating portion near the end of the heater 32a. The pair of holders 32b can be formed from, for example, an elongated metal plate or steel. The material of the pair of holders 32b is not particularly limited, but a material having heat resistance and corrosion resistance is preferable. The material of the pair of holders 32b can be stainless steel, for example.

The workpiece support unit 33 supports the workpiece 100 between the upper heating unit and the lower heating unit. A plurality of workpiece support portions 33 can be provided. The plurality of workpiece support portions 33 are provided below the processing region 30a and below the processing region 30b. The plurality of work support portions 33 can be rod-shaped bodies.
One end portion (the upper end portion in FIG. 1) of the plurality of workpiece support portions 33 is in contact with the lower surface (back surface) of the workpiece 100. For this reason, the shape of one end of the plurality of workpiece support portions 33 is preferably hemispherical. If the shape of one end of the plurality of workpiece support portions 33 is hemispherical, it is possible to suppress the occurrence of damage on the lower surface of the workpiece 100. Further, since the contact area between the lower surface of the workpiece 100 and the plurality of workpiece support portions 33 can be reduced, the heat transmitted from the workpiece 100 to the plurality of workpiece support portions 33 can be reduced.

As described above, the workpiece 100 is heated by thermal energy due to radiation in an atmosphere reduced in pressure from atmospheric pressure. Accordingly, in the plurality of workpiece support portions 33, the distance from the upper heating portion to the upper surface of the workpiece 100 and the distance from the lower heating portion to the lower surface of the workpiece 100 are such that the workpiece 100 can be heated. Next, the workpiece 100 is supported.
This distance is a distance at which the heat energy by radiation can reach the workpiece 100 from the heating unit 32.

  The other ends (lower ends in FIG. 1) of the plurality of workpiece support portions 33 are a plurality of rod-like members or plate-like members that are spanned between a pair of frames 31 on both sides of the processing portion 30. Etc. can be fixed. A plurality of rod-like members or plate-like members can be bridged between the frames of the frame 31. In this case, if a plurality of workpiece support portions 33 are detachably provided, work such as maintenance is facilitated. For example, a male screw can be provided at the other end of the work support portion 33, and a female screw can be provided at a plurality of rod-like members or plate-like members.

  Further, for example, the plurality of work support portions 33 are merely placed without being fixed to a plurality of rod-like members or plate-like members spanned between the frames 31 on both sides of the processing portion 30. But you can. For example, a plurality of holes are formed in the rod-like member or plate-like member, and the plurality of workpiece support portions 33 are held by the rod-like member or plate-like member by inserting the plurality of workpiece support portions 33 into the holes. You can make it. The diameter of the hole can be as follows even when the workpiece support 33 is thermally expanded. For example, the diameter of the hole is preferably set such that air between the work support 33 and the inner wall of the hole can escape even if the work support 33 is thermally expanded. If it does in this way, even if the air in a hole expands thermally, it can prevent the workpiece | work support part 33 being extruded.

The number, arrangement, interval, and the like of the plurality of workpiece support portions 33 can be changed as appropriate according to the size and rigidity (deflection) of the workpiece 100. The number, arrangement, interval, and the like of the plurality of workpiece support portions 33 can be appropriately determined by performing simulations and experiments.
The material of the plurality of workpiece support portions 33 is not particularly limited, but it is preferable to use a material having heat resistance and corrosion resistance. The material of the plurality of workpiece support portions 33 can be stainless steel, for example.

In addition, at least end portions of the plurality of workpiece support portions 33 that are in contact with the workpiece 100 can be formed from a material having low thermal conductivity. The material having low thermal conductivity can be, for example, ceramic. In this case, among ceramics, a material having a thermal conductivity at 20 ° C. of 32 W / (m · k) or less is preferable. The ceramic can be, for example, alumina (Al ₂ O ₃ ), silicon nitride (Si ₃ N ₄ ), zirconia (ZrO ₂ ), or the like.

The soaking unit 34 includes a plurality of upper soaking plates 34a, a plurality of lower soaking plates 34b, a plurality of side soaking plates 34c, and a plurality of side soaking plates 34d. The plurality of upper soaking plates 34a, the plurality of lower soaking plates 34b, the plurality of side portion soaking plates 34c, and the plurality of side portion soaking plates 34d have a plate shape.
The plurality of upper soaking plates 34a are provided on the lower heating unit side (work 100 side) of the upper heating unit. The plurality of upper soaking plates 34a are provided separately from the plurality of heaters 32a. That is, a gap is provided between the upper surface of the plurality of upper soaking plates 34a and the lower surface of the plurality of heaters 32a. The plurality of upper soaking plates 34a are provided side by side in the direction in which the plurality of heaters 32a are arranged (X direction in FIG. 1).
The plurality of lower soaking plates 34b are provided on the upper heating part side (workpiece 100 side) of the lower heating part. The plurality of lower soaking plates 34b are provided separately from the plurality of heaters 32a. That is, a gap is provided between the lower surface of the plurality of lower heat equalizing plates 34b and the upper surface of the plurality of heaters 32a. The plurality of lower soaking plates 34b are arranged side by side in the direction in which the plurality of heaters 32a are arranged (X direction in FIG. 1).

The side soaking plate 34c is provided on each of the side portions on both sides (X direction in FIG. 1) of the processing regions 30a and 30b in the direction in which the plurality of heaters 32a are arranged. The side soaking plate 34 c can be provided inside the cover 36. In addition, at least one heater 32 a provided separately from the side heat equalizing plate 34 c and the cover 36 may be provided between the side heat equalizing plate 34 c and the cover 36.
The side heat equalizing plate 34d is provided on each of the side portions on both sides (the Y direction in FIG. 1) of the processing regions 30a and 30b in the direction orthogonal to the direction in which the plurality of heaters 32a are arranged.
The processing regions 30a and 30b are surrounded by a plurality of upper soaking plates 34a, a plurality of lower soaking plates 34b, a plurality of side soaking plates 34c, and a plurality of side soaking plates 34d. A cover 36 surrounds these outsides.

As described above, the plurality of heaters 32a have a rod shape and are arranged side by side with a predetermined interval. When the heater 32a is rod-shaped, heat is radiated radially from the central axis of the heater 32a. In this case, the temperature of the heated part becomes higher as the distance between the central axis of the heater 32a and the heated part becomes shorter. Therefore, when the workpiece 100 is held so as to face the plurality of heaters 32a, the region of the workpiece 100 positioned immediately above or immediately below the heater 32a is directly above or directly below the space between the plurality of heaters 32a. The temperature is higher than the area of the workpiece 100 that is positioned. That is, when the workpiece 100 is directly heated using the plurality of heaters 32a having a rod shape, a non-uniform temperature distribution is generated in the heated workpiece 100.
If a non-uniform temperature distribution occurs in the workpiece 100, the quality of the formed organic film may be degraded. For example, there is a possibility that bubbles are generated in a portion where the temperature is high, or the composition of the organic film is changed in a portion where the temperature is high.

  The organic film forming apparatus 1 according to the present embodiment is provided with the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b described above. Therefore, the heat radiated from the plurality of heaters 32a is incident on the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b, and is radiated toward the workpiece 100 while propagating through the inside in the surface direction. . As a result, it is possible to suppress the occurrence of non-uniform temperature distribution in the workpiece 100, and as a result, the quality of the formed organic film can be improved.

  In this case, if the distance between the surface of the heater 32a and the upper soaking plate 34a immediately below and the distance between the surface of the heater 32a and the lower soaking plate 34b immediately above are too short, the upper soaking plate is too short. There is a possibility that non-uniform temperature distribution occurs in the hot plate 34a and the lower soaking plate 34b, and consequently non-uniform temperature distribution occurs in the workpiece 100. If these distances are too long, the temperature rise of the workpiece 100 may be delayed. According to the knowledge obtained by the present inventors, these distances are preferably 20 mm or more and 100 mm or less. Further, if the distance between the surface of the heater 32a and the upper soaking plate 34a just below and the distance between the surface of the heater 32a and the lower soaking plate 34b just above are the same, The heat radiated from the lower heating unit to the workpiece 100 can be made uniform.

  The materials of the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b are preferably materials having high thermal conductivity. The plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b may include, for example, at least one of aluminum, copper, and stainless steel.

  Here, since the workpiece 100 is heated in an atmosphere depressurized from the atmospheric pressure, oxidation of the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b is suppressed during heating of the workpiece 100. can do. However, in order to carry out the workpiece 100 on which the organic film is formed, it is necessary to lower the temperature of the workpiece 100. In this case, in order to shorten the cooling time, for example, a cooling gas may be introduced into the chamber 10 from a cooling gas supply unit (not shown) through the exhaust port 17 or the like. Nitrogen gas may be used as the cooling gas, but a mixed gas of nitrogen gas and air may be used to reduce the manufacturing cost. Therefore, when the workpiece 100 is cooled, oxygen in the cooling gas may react with the materials of the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b.

  When the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b contain copper, aluminum, or the like, it is preferable to provide a layer containing a material that is difficult to oxidize on the surface. For example, when the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b contain copper, it is preferable to provide a layer containing nickel on the surface. For example, the surfaces of the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b containing copper can be plated with nickel. When the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b contain aluminum, it is preferable to provide a layer containing aluminum oxide on the surface. For example, the surfaces of the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b containing aluminum can be anodized.

When the temperatures of the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b are 300 ° C. or lower during heating, the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b containing aluminum are included. Can be used.
When the temperature of the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b is 500 ° C. or higher during heating, the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b including stainless steel are used. Or it is preferable to use a plurality of upper soaking plates 34a and a plurality of lower soaking plates 34b having copper and a layer containing nickel on the surface. In this case, if a plurality of upper soaking plates 34a and a plurality of lower soaking plates 34b containing stainless steel are used, versatility and maintainability can be improved.

A part of the heat radiated from the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b is directed to the side of the processing regions 30a and 30b. Therefore, the above-described side heat equalizing plates 34c and 34d are provided on the side portions of the processing regions 30a and 30b. A part of the heat incident on the side soaking plates 34c and 34d is radiated toward the workpiece 100 while propagating in the surface direction on the side soaking plates 34c and 34d. Therefore, the heating efficiency of the workpiece 100 can be improved.
Further, as described above, the heating efficiency of the workpiece 100 can be further improved if at least one heater 32a is provided outside the side soaking plate 34c. Moreover, the sublimation product generated when the organic film is heated is likely to adhere to a location lower than the ambient temperature. By heating the side soaking plate 34c as well, it is possible to suppress the sublimate from adhering to the side soaking plate 34c.

  Here, if a non-uniform temperature distribution different from that of the upper and lower temperature equalizing plates 34a and 34b occurs in the side temperature equalizing plates 34c and 34d, there is a possibility that a non-uniform temperature distribution may occur in the workpiece 100. Therefore, it is preferable that the material of the side soaking plates 34c and 34d is the same as the material of the upper soaking plate 34a and the lower soaking plate 34b described above.

  As described above, the temperatures of the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b may be 500 ° C. or higher. Therefore, there is a possibility that the amount of elongation of the upper soaking plate 34a and the lower soaking plate 34b becomes large, or warpage due to thermal deformation occurs. Therefore, it is preferable to provide a gap between the plurality of upper soaking plates 34a. It is preferable to provide a gap between the plurality of lower soaking plates 34b. These gaps include the heating temperature, the dimensions of the upper soaking plate 34a in the direction in which the plurality of upper soaking plates 34a are arranged, the dimensions of the lower soaking plate 34b in the direction in which the plurality of lower soaking plates 34b are arranged, and the upper soaking plate. 34a and lower soaking plate 34b can be appropriately determined. For example, at a predetermined maximum heating temperature, a gap of about 1 mm to 2 mm can be generated between the plurality of upper soaking plates 34a and between the plurality of lower soaking plates 34b. If it does in this way, it can control that a plurality of upper soaking plates 34a interfere, and a plurality of lower soaking plates 34b interfere with each other at the time of heating.

Although the plurality of upper soaking plates 34a and the plurality of lower soaking plates 34b have been described as being arranged in the direction in which the plurality of heaters 32a are arranged, the upper soaking plates 34a and the lower soaking plates 34b At least one may be a single plate member. In this case, at least one of the upper soaking plate 34 a and the lower soaking plate 34 b is supported by the pair of soaking plate support portions 35 closest to both ends of the frame 31.
Note that even if at least one of the upper soaking plate 34a and the lower soaking plate 34b is a single plate-like member, the end of the upper soaking plate 34a (or the lower soaking plate 34b) in FIG. In the vicinity of the portion, a gap is provided to connect the space between the inner wall of the chamber 10 and the cover 36 and the processing chambers 30a and 30b.
Even when the upper soaking plate 34a and the lower soaking plate 34b are formed as a single plate member, the heat radiated from the plurality of heaters 32a is incident on the upper soaking plate 34a and the lower soaking plate 34b. Then, it is radiated toward the workpiece 100 while propagating in the plane direction. Therefore, it is possible to suppress the occurrence of non-uniform temperature distribution in the workpiece 100, and as a result, the quality of the formed organic film can be improved. That is, according to the organic film forming apparatus 1 according to the present embodiment, the substrate coated with the solution containing the organic material and the solvent can be uniformly heated to form the organic film uniformly in the substrate surface.

The plurality of soaking plate support portions 35 (upper soaking plate support portions) are provided side by side in the direction in which the plurality of upper soaking plates 34a are arranged. The soaking plate support portion 35 can be provided immediately below the upper soaking plates 34a in the direction in which the plurality of upper soaking plates 34a are arranged.
The plurality of soaking plate support portions 35 can be fixed to the pair of holders 32b using a fastening member such as a screw. The pair of soaking plate support portions 35 detachably support both ends of the upper soaking plate 34a. A plurality of heat equalizing plate support portions (lower heat equalizing plate support portions) that support the plurality of lower heat equalizing plates 34b can also have the same configuration.

If the upper soaking plate 34a and the lower soaking plate 34b are fixed using a fastening member such as a screw, the upper soaking plate 34a and the lower soaking plate 34b are deformed by thermal expansion. When the upper soaking plate 34a and the lower soaking plate 34b are deformed, the distance between the upper soaking plate 34a and the workpiece 100 and the distance between the lower soaking plate 34b and the workpiece 100 are locally changed. There is a risk that a non-uniform temperature distribution may occur in the workpiece 100.
If the upper soaking plate 34a and the lower soaking plate 34b are supported by the pair of soaking plate support portions 35, a dimensional difference due to thermal expansion can be absorbed. Therefore, it is possible to suppress the upper soaking plate 34a and the lower soaking plate 34b from being deformed.

The cover 36 has a plate shape and covers the upper surface, the bottom surface, and the side surface of the frame 31. That is, the inside of the frame 31 is covered by the cover 36. However, the cover 36 on the open / close door 13 side can be provided on the open / close door 13, for example.
The cover 36 provided on the top and bottom surfaces of the frame 31 is divided into a plurality of parts. A gap is provided between the divided covers 36. Therefore, since the space between the inner wall of the chamber 10 and the cover 36 and the processing regions 30a and 30b are connected, the pressure in the processing regions 30a and 30b is reduced between the inner wall of the chamber 10 and the cover 36. The pressure can be the same. The cover 36 can be formed from, for example, stainless steel.
A space is provided between the inner wall of the chamber 10 and the cover 36. That is, the organic film forming apparatus 1 has a double structure including the chamber 10 and the processing unit 30 (processing regions 30a and 30b). In this way, the heat escaping from the processing regions 30a and 30b to the outside can be reduced, so that the heating efficiency can be improved.

As shown in FIG. 1, the 1st accommodating part 2 accommodates the board | substrate before a solution is apply | coated. The 1st accommodating part 2 can accommodate several board | substrates so that it may laminate | stack in the up-down direction at intervals.
The 2nd accommodating part 3 accommodates the board | substrate with which the organic film was formed in the surface. The 2nd accommodating part 3 can accommodate the board | substrate in which the some organic film was formed so that it may laminate | stack in the up-down direction at intervals.

The transport unit 4 transports and transfers the substrate between the first storage unit 2 and the solution coating apparatus 5.
The transport unit 4 transports a substrate coated with a solution containing an organic material and a solvent between the solution coating device 5 and the pre-baking device 6.
The transport unit 4 transports the substrate from which the solvent is evaporated between the temporary baking apparatus 6 and the organic film forming apparatus 1. When the provisional baking apparatus 6 is not provided, the transport unit 4 transports the substrate coated with the solution containing the organic material and the solvent between the solution coating apparatus 5 and the organic film forming apparatus 1. .
The transport unit 4 transports the substrate on which the organic film is formed between the organic film forming apparatus 1 and the second storage unit 3.
The transport unit 4 can be, for example, a transport robot that can transport and transfer a plate-like member.

The solution applying apparatus 5 applies a solution containing an organic material and a solvent to the surface of the substrate.
FIG. 3 is a schematic perspective view for illustrating the solution coating apparatus 5.
The solution coating device 5 can be a so-called slit coater device.
As shown in FIG. 3, the solution coating apparatus 5 is provided with a mounting table 51, a nozzle 52, and a solution supply unit 53.

  On the upper surface of the mounting table 51, the substrate 101 is mounted. The mounting table 51 can be provided with a holding device that holds the substrate 101. The holding device can be, for example, a vacuum chuck. Moreover, the mounting table 51 can move in a predetermined direction. The mounting table 51 illustrated in FIG. 3 can move in the X direction in FIG. Note that it is only necessary that the relative position between the mounting table 51 and the nozzle 52 can be changed in a predetermined direction. That is, it is only necessary that at least one of the mounting table 51 and the nozzle 52 moves in a predetermined direction.

  The nozzle 52 is provided above the mounting table 51. The nozzle 52 extends in a direction that intersects the moving direction of the mounting table 51. The nozzle 52 illustrated in FIG. 3 extends in the Y direction in FIG. Inside the nozzle 52, a space for storing the solution 102 containing an organic material and a solvent is provided. A slit is opened on the end surface of the nozzle 52 on the mounting table 51 side. The slit extends in the direction in which the nozzle 52 extends.

The solution supply unit 53 stores the solution 102 in the tank 53 a and supplies the solution 102 from the tank 53 a to the space inside the nozzle 52.
The solution 102 supplied from the solution supply unit 53 to the inside of the nozzle 52 is supplied to the substrate 101 from the slit of the nozzle 52. At this time, the surface of the substrate 101 can be covered with the solution 102 by changing the relative position of the mounting table 51 and the nozzle 52 in a predetermined direction. Note that a part of the surface of the substrate 101 may be covered with the solution 102.
In addition, although the case where the solution coating apparatus 5 was a slit coater apparatus was illustrated in the above, it is not necessarily limited to this. The solution coating device 5 may be any device that can apply the solution 102 to the surface of the substrate 101.

Here, if foreign matter or bubbles are mixed in the solution 102, the quality of the formed organic film may be deteriorated. For example, when the temperature of the solution 102 in which bubbles are mixed is rapidly increased, bumping of the solution 102 may occur, and there may be a depression or a hole in the organic film.
According to the knowledge obtained by the present inventor, if the solution 102 is filtered with a filter of 5 μm or less and further allowed to stand for 1 hour or more in an environment of 100 Pa or less, bubbles and foreign matters can be removed. In this case, the filter can be provided at the supply port of the tank 53a. Further, a dry vacuum pump or the like can be connected to the tank 53a. In addition, when providing the pre-processing apparatus 8, the dry vacuum pump and filter of the tank 53a are omissible.

In addition to the tank 53a, a pretreatment device 8 for performing such a solution pretreatment may be provided.
The pretreatment device 8 filters the solution with a filter of 5 μm or less, and retains the filtered solution in an atmosphere of 100 Pa or less for 1 hour or more. Then, the pretreatment device 8 supplies the pretreated solution to the tank 53a.

Here, in the organic film forming apparatus 1, if the substrate 101 coated with the solution 102 is heated rapidly, the amount of sublimation generated may increase.
According to the knowledge obtained by the present inventors, if the solvent of the solution 102 applied to the surface of the substrate 101 is evaporated to some extent, the generation of sublimates is greatly suppressed even if the substrate 101 is heated rapidly thereafter. can do. If the substrate 101 can be heated rapidly, the time required for temperature rise can be reduced, and productivity can be improved. That is, the quality and productivity of the organic film can be improved.
Therefore, the organic film forming system 200 is provided with a temporary baking apparatus 6 (see FIG. 1).
The temporary baking apparatus 6 evaporates the solvent of the solution 102 applied to the surface of the substrate 101.

FIG. 4 is a schematic cross-sectional view for illustrating the temporary baking apparatus 6.
As shown in FIG. 4, the pre-baking apparatus 6 is provided with a chamber 61, a heater 62, and an exhaust unit 63.
The chamber 61 has a box shape. The chamber 61 has an airtight structure capable of maintaining an atmosphere whose pressure is reduced from the atmospheric pressure. There is no particular limitation on the external shape of the chamber 61. The external shape of the chamber 61 can be a rectangular parallelepiped, for example. The chamber 61 can be formed from, for example, a metal such as stainless steel.
In addition, a placement portion 61 a can be provided inside the chamber 61. A plurality of placement portions 61a can be provided. The plurality of placement portions 61a can be provided side by side in the vertical direction (Z direction in FIG. 4). A substrate 101 coated with the solution 102 is placed on each of the plurality of placement units 61a.

  The heater 62 is provided inside the chamber 61. There is no particular limitation on the type of the heater 62. The heater 62 can be the same as the heater 32a described above, for example. Further, the arrangement and number of the heaters 62 are not particularly limited as long as the temperature of the substrate 101 on which the solution 102 is applied can be raised to a temperature at which the solvent evaporates (for example, about 90 ° C.).

The exhaust unit 63 exhausts the inside of the chamber 61.
The exhaust unit 63 includes an exhaust pump 63a and a pressure control unit 63b.
The exhaust pump 63a can be, for example, a dry vacuum pump.
The pressure control unit 63b is provided between the chamber 61 and the exhaust pump 63a. The pressure control unit 63b controls the internal pressure of the chamber 61 to be a predetermined pressure based on the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber 61. The pressure control unit 61b can be, for example, APC.

According to the knowledge obtained by the present inventors, if the substrate 101 coated with the solution 102 is left in an atmosphere of 90 ° C. or lower and 100 Pa or lower for 3 minutes or more, the amount of the solvent contained in the solution 102 is large. The part can be evaporated. That is, in this way, the solution 102 applied to the surface of the substrate 101 can be dried.
Therefore, the temporary baking apparatus 6 evaporates the solvent by setting the atmosphere temperature to 90 ° C. or less, the atmosphere pressure to 100 Pa or less, and the treatment time to 3 minutes or more. In this case, the processing time can be, for example, 3 minutes or more and 60 minutes or less.

In addition, if it heats at the temperature of 90 degrees C or less, a sublimate will hardly generate | occur | produce. Therefore, such drying can also be performed in the organic film forming apparatus 1. For example, in the organic film forming apparatus 1, heating can be performed at a temperature of 90 ° C. or lower, and then the organic film can be formed at a temperature of about 100 ° C. to 600 ° C.
Further, depending on the composition of the solution 102, the generation of sublimates may be small.
Therefore, the provisional firing device 6 may be provided as necessary. Further, the evaporation of the solvent can be performed as necessary.
In addition, when the solution 102 is a varnish containing polyamic acid, it is preferable to perform evaporation of the solvent. If the solvent is evaporated when the solution 102 is a varnish containing polyamic acid, the amount of sublimate generated when the polyamic acid is heated to imidize can be greatly reduced.
Further, by evaporating the solvent in the pre-baking apparatus 6 having a different configuration from the organic film forming apparatus 1, the vapor or sublimate generated when the solvent evaporates is kept in the environment of the pre-baking apparatus 6 and the organic film forming apparatus 1 It can be prevented from being brought into the film forming apparatus 1. In the pre-baking apparatus 6, after the heat treatment of the work 100 is completed and the work 100 is transported to the organic film forming apparatus 1, the inside of the pre-baking apparatus 6 can be cleaned.

The control unit 7 includes a calculation unit such as a CPU (Central Processing Unit) and a storage unit such as a memory.
The control unit 7 controls the operation of each element provided in the organic film forming system 200 based on a control program stored in the storage unit.
For example, the control unit 7 controls the exhaust unit 20 and the heater 32a provided in the organic film forming apparatus 1. The control unit 7 controls the exhaust unit 20 to apply electric power to the heater 32a after the internal pressure of the chamber 10 becomes a predetermined value or less. In this case, the control unit 7 can control the exhaust unit 20 to apply power to the heater 32a after the internal pressure of the chamber 10 reaches a pressure at which the oxygen concentration in the chamber becomes 100 ppm.
Moreover, the control part 7 can control the heater 32a so that the temperature of the atmosphere in the chamber 10 becomes 50 ° C. or higher when the internal pressure of the chamber 10 is returned to substantially atmospheric pressure.
Further, the control unit 7 controls the exhaust unit 20 and the heater 32a to evaporate the solvent of the solution, and then at a temperature higher than the temperature for evaporating the solvent and lower than the pressure for evaporating the solvent. An organic film can be formed from the material. In this case, the control unit 7 controls the exhaust unit 20 and the heater 32a so that the temperature in the chamber 10 is 90 ° C. or less, the internal pressure in the chamber 10 is 100 Pa or less, and the processing time is 3 minutes or more. Can be evaporated.
The organic film forming apparatus 1, the transport unit 4, the solution coating apparatus 5, and the temporary baking apparatus 6 are also provided with a control unit, and the control unit provided in each device controls each device. Good. In this case, the control unit 7 may control synchronization between the devices.

Next, together with the operation of the organic film forming system 200, the organic film forming method according to the present embodiment will be illustrated.
As an example, the case where the solution 102 is a varnish containing polyamic acid will be described as an example.
First, the transport unit 4 takes out the substrate 101 from the first storage unit 2 and transfers it to the solution coating apparatus 5.
The solution coating apparatus 5 applies a solution 102, that is, a varnish containing polyamic acid, to the surface of the substrate 101.
Note that it is preferable to remove foreign matters and bubbles contained in the solution 102 in advance. For example, if the solution 102 is filtered with a filter of 5 μm or less and further left in an environment of 100 Pa or less for 1 hour or more, bubbles and foreign substances can be removed.

Next, the transport unit 4 takes out the substrate 101 coated with the varnish containing polyamic acid from the solution coating apparatus 5 and transfers it to the temporary baking apparatus 6 or the organic film forming apparatus 1.
In the pre-baking apparatus 6 or the organic film forming apparatus 1, the substrate 101 coated with the varnish containing polyamic acid is left in an atmosphere of 90 ° C. or lower and 100 Pa or lower for 3 minutes or longer to evaporate the solvent.

In the pre-baking apparatus 6, temporary baking which evaporates a solvent is performed.
When the solvent is evaporated in the pre-baking apparatus 6, the transport unit 4 takes out the substrate 101 from which the solvent has been evaporated from the pre-baking apparatus 6 and transfers it to the organic film forming apparatus 1.
In the organic film forming apparatus 1, main baking is performed in which the substrate 101 after evaporation of the solvent is heated to imidize the polyamic acid. That is, a polyimide film is formed on the surface of the substrate 101.

Here, in order to shorten the formation time of the organic film in the organic film forming apparatus 1, it is preferable to overlap the decompression time and the temperature raising time. For example, the first exhaust unit 21 (exhaust pump 21a) can apply power to the heater 32a simultaneously with the start of exhaust. In this way, the formation time of the organic film can be shortened.
However, even after the exhaust by the first exhaust unit 21 is started, air remains in the chamber 10 for a while. For this reason, there is a possibility that the oxygen contained in the remaining air reacts with the polyamic acid heated by the heater 32a to cause an oxidation reaction.

  In this case, if the inside of the chamber 10 is purged with nitrogen gas or the like and then exhausted by the first exhaust unit 21 and heated by the heater 32a, the occurrence of an oxidation reaction can be suppressed. However, if this is done, a large amount of nitrogen gas is consumed, resulting in an increase in manufacturing cost. Further, a time for purging is required, and there is a possibility that the time for forming the organic film becomes longer. Further, if purging is performed, dust such as sublimation inside the chamber 10 may be scattered.

Therefore, in the organic film forming apparatus 1, power is applied to the heater 32a after the pressure is reduced to a pressure that can suppress the oxidation reaction.
According to the knowledge obtained by the present inventors, the oxidation reaction can be suppressed if the oxygen concentration in the chamber 10 is lowered to about 100 ppm. In this case, the internal pressure of the chamber 10 where the oxygen concentration is 100 ppm is about 100 Pa. Therefore, if electric power is applied to the heater 32a when the internal pressure of the chamber 10 reaches 1 Pa to 100 Pa, the oxidation reaction can be suppressed.
The time required for the internal pressure of the chamber 10 to be reduced from atmospheric pressure to about 100 Pa is not so long. In this case, the decompression time can be shortened by setting the internal pressure of the chamber 10 to about 10 Pa by the first exhaust unit 21 that performs rough exhaust.
Therefore, if electric power is applied to the heater 32a when the internal pressure of the chamber 10 reaches 1 Pa to 100 Pa, it is possible to shorten the formation time of the organic film and suppress the oxidation reaction. Moreover, if the internal pressure of the chamber 10 is 1 Pa to 100 Pa, the occurrence of gas flow inside the chamber 10 is suppressed. Therefore, it is possible to suppress the scattering of dust such as sublimates inside the chamber 10.

FIG. 5 is a schematic graph for illustrating the process of reducing the internal pressure of the chamber 10 and the process of heating the substrate 101.
Note that P in FIG. 5 is the internal pressure of the chamber 10, and T is the temperature of the substrate 101.
As shown in FIG. 5, when the internal pressure of the chamber 10 reaches 1 Pa to 100 Pa, heating (temperature increase) of the substrate 101 can be started by applying electric power to the heater 32 a.
In this way, the effects described above can be enjoyed.

Moreover, in order to carry out the workpiece | work 100 in which the organic film was formed from the chamber 10, it is necessary to reduce the temperature of the workpiece | work 100. FIG. For example, when the internal pressure of the chamber 10 is returned to approximately atmospheric pressure, the workpiece 100 can be easily carried out if the temperature of the atmosphere in the chamber 10 is normal. However, in the organic film forming apparatus 1, the workpiece 100 is continuously heated. For this reason, if the atmosphere in the chamber 10 is brought to room temperature each time the workpiece 100 on which the organic film is formed is carried out, the time for raising the temperature of the next workpiece 100 becomes longer. That is, productivity may be reduced.
According to the knowledge obtained by the present inventors, when the internal pressure of the chamber 10 is returned to substantially atmospheric pressure, the work 100 can be easily carried out if the temperature of the atmosphere in the chamber 10 is 50 ° C. or higher. In addition, the time for raising the temperature of the next workpiece 100 can be shortened.
For example, by controlling the heater 32a by the control unit 7, the temperature of the atmosphere in the chamber 10 can be 50 ° C. or higher when the internal pressure of the chamber 10 is returned to substantially atmospheric pressure.

As described above, the organic film forming method according to the present embodiment can include the following steps.
A step of heating a substrate coated with a solution containing an organic material and a solvent in an atmosphere reduced in pressure from atmospheric pressure.
In this heating step, the heating can be performed after the atmospheric pressure becomes a predetermined value or less. In this case, heating can be performed after the pressure of the atmosphere becomes a pressure at which the oxygen concentration in the atmosphere becomes 100 ppm or less.
Further, after evaporating the solvent, the organic film can be formed from the organic material at a temperature higher than the temperature for evaporating the solvent and a pressure lower than the pressure for evaporating the solvent.
In addition, the solvent can be evaporated by setting the temperature of the atmosphere to 90 ° C. or less, the pressure of the atmosphere to 100 Pa or less, and the treatment time to 120 seconds or more.

In addition, a step of evaporating the solvent on the substrate on which the solution containing the organic material and the solvent is applied, and a step of heating the substrate on which the solvent is evaporated in an atmosphere whose pressure is reduced from the atmospheric pressure can be provided.
In this heating step, the heating can be performed after the atmospheric pressure becomes a predetermined value or less. In this case, heating can be performed after the atmospheric pressure becomes 1 Pa to 100 Pa.
In this evaporation step, the atmosphere temperature can be 90 ° C. or less, the atmosphere pressure can be 100 Pa or less, and the treatment time can be 3 minutes or more.
Moreover, the process of returning the atmospheric pressure to substantially atmospheric pressure can be further provided.
In the step of returning the pressure of the atmosphere to substantially atmospheric pressure, the temperature of the atmosphere can be 50 ° C. or higher when the pressure of the atmosphere becomes substantially atmospheric pressure.
Moreover, the process of pre-processing a solution can be further provided.
In the step of performing the pretreatment, the solution can be filtered with a filter of 5 μm or less, and the filtered solution can be retained in an atmosphere of 100 Pa or less for 1 hour or more.

The embodiment has been illustrated above. However, the present invention is not limited to these descriptions.
As long as the features of the present invention are provided, those skilled in the art appropriately modified the design of the above-described embodiments are also included in the scope of the present invention.
For example, the shape, size, arrangement, and the like of the elements included in each device provided in the organic film forming system 200 are not limited to those illustrated, but can be changed as appropriate.
Moreover, each element with which each embodiment mentioned above is combined can be combined as much as possible, and what combined these is also included in the scope of the present invention as long as the characteristics of the present invention are included.

  DESCRIPTION OF SYMBOLS 1 Organic film forming apparatus, 2 1st accommodating part, 2nd accommodating part, 4 conveyance part, 5 Solution coating apparatus, 6 Temporary baking apparatus, 7 Control part, 8 Pretreatment apparatus, 10 Chamber, 20 Exhaust part, 21 1st exhaust part, 22 2nd exhaust part, 30 process part, 30a process area, 30b process area, 32 heating part, 32a heater, 34 soaking part, 34a upper soaking plate, 34b lower soaking board, 100 work, 101 substrate, 102 solution, 200 organic film formation system

Claims (18)

A chamber capable of maintaining an atmosphere depressurized from atmospheric pressure;
An exhaust part capable of exhausting the interior of the chamber;
A processing region provided inside the chamber and supported by a workpiece having a substrate and a solution containing an organic material and a solvent applied to the surface of the substrate;
A heating unit provided inside the chamber for heating the workpiece;
A control unit for controlling the exhaust unit and the heating unit;
With
The said control part is an organic film formation apparatus which applies electric power to the said heating part, after the internal pressure of the said chamber becomes below a predetermined value by controlling the said exhaust part.   2. The organic material according to claim 1, wherein the control unit controls the exhaust unit to apply electric power to the heating unit after the internal pressure of the chamber reaches a pressure at which an oxygen concentration in the chamber becomes 100 ppm or less. Film forming device.   3. The organic film according to claim 1, wherein the control unit controls the heating unit so that the temperature of the atmosphere in the chamber becomes 50 ° C. or higher when the internal pressure of the chamber is returned to substantially atmospheric pressure. Forming equipment.   The control unit controls the exhaust unit and the heating unit to evaporate the solvent, and then at a temperature higher than a temperature for evaporating the solvent and a pressure lower than a pressure for evaporating the solvent, The organic film forming apparatus according to claim 1, wherein the organic film is formed from an organic material.   The control unit controls the exhaust unit and the heating unit to evaporate the solvent by setting the temperature in the chamber to 90 ° C. or less, the internal pressure of the chamber to 100 Pa or less, and the processing time to 3 minutes or more. The organic film forming apparatus according to claim 4. An organic film forming apparatus according to any one of claims 1 to 5,
A solution coating apparatus for applying a solution containing an organic material and a solvent to the surface of the substrate;
A pretreatment device for pretreating the solution;
With
The pretreatment apparatus is an organic film forming system in which the solution is filtered with a filter of 5 μm or less, and the filtered solution is retained in an atmosphere of 100 Pa or less for 1 hour or more. An organic film forming apparatus according to any one of claims 1 to 5,
A pre-baking apparatus for evaporating the solvent of a solution containing an organic material and a solvent applied to the surface of the substrate;
A transport unit for transporting the substrate from which the solvent has been evaporated to the organic film forming apparatus;
Organic film forming system with   The organic film forming system according to claim 7, wherein the temporary baking apparatus evaporates the solvent by setting the temperature of the atmosphere to 90 ° C. or less, the pressure of the atmosphere to 100 Pa or less, and the processing time to 3 minutes or more. A solution coating apparatus for coating the solution on the surface of the substrate;
A pretreatment device for pretreating the solution;
Further comprising
The organic film forming system according to claim 7 or 8, wherein the pretreatment device filters the solution with a filter of 5 µm or less and retains the filtered solution in an atmosphere of 100 Pa or less for 1 hour or more. A step of heating a substrate coated with a solution containing an organic material and a solvent in an atmosphere reduced in pressure from atmospheric pressure;
The organic film formation method which performs the said heating after the pressure of the said atmosphere becomes below a predetermined value.   The organic film forming method according to claim 10, wherein, in the heating step, the heating is performed after the pressure of the atmosphere becomes a pressure at which an oxygen concentration in the atmosphere becomes 100 ppm or less.   The organic film according to claim 10 or 11, wherein after the solvent is evaporated, an organic film is formed from the organic material at a temperature higher than a temperature at which the solvent is evaporated and a pressure lower than a pressure at which the solvent is evaporated. Forming method.   The organic film forming method according to claim 12, wherein the solvent is evaporated by setting the temperature of the atmosphere to 90 ° C. or less, the pressure of the atmosphere to 100 Pa or less, and the processing time to 3 minutes or more. Evaporating the solvent on a substrate coated with a solution containing an organic material and a solvent;
Heating the substrate in which the solvent is evaporated in an atmosphere reduced in pressure from atmospheric pressure,
In the heating step, the organic film forming method of performing the heating after the pressure of the atmosphere becomes a predetermined value or less.   The organic film forming method according to claim 14, wherein, in the heating step, the heating is performed after the pressure of the atmosphere becomes a pressure at which an oxygen concentration in the atmosphere becomes 100 ppm or less.   The organic film forming method according to claim 14, wherein in the step of evaporating, the temperature of the atmosphere is 90 ° C. or less, the pressure of the atmosphere is 100 Pa or less, and the treatment time is 3 minutes or more. A step of returning the pressure of the atmosphere to substantially atmospheric pressure;
The step of returning the pressure of the atmosphere to approximately atmospheric pressure, wherein the temperature of the atmosphere when the pressure of the atmosphere becomes approximately atmospheric pressure is set to 50 ° C or higher. Organic film forming method. Further comprising a step of pretreating the solution;
The organic material according to any one of claims 10 to 17, wherein in the step of performing the pretreatment, the solution is filtered with a filter of 5 µm or less, and the filtered solution is retained in an atmosphere of 100 Pa or less for 1 hour or more. Film forming method.

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