JP2019174249A - Method for measuring distance between holes - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000005259 measurement Methods 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000000691 measurement method Methods 0.000 claims 1
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- 239000011148 porous material Substances 0.000 description 24
- 229910000838 Al alloy Inorganic materials 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
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- 238000002048 anodisation reaction Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000000235 small-angle X-ray scattering Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
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- -1 polyethylene Polymers 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- 229910016523 CuKa Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 238000007743 anodising Methods 0.000 description 1
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- 238000005237 degreasing agent Methods 0.000 description 1
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- 239000010419 fine particle Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
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- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
本発明は、孔間距離の測定方法に関する。 The present invention relates to a method for measuring a distance between holes.
陽極酸化皮膜などの多孔質体の特性は、細孔径および孔間距離などによって変動する。たとえば、特許文献1には、陽極酸化皮膜を形成したアルミニウム基材と、樹脂と、を上記陽極酸化皮膜を介して接合させる方法が記載されている。特許文献1には、多孔質である陽極酸化皮膜の細孔に樹脂を侵入させて、上記アルミニウム基材と樹脂とをより強固に接合させるため、陽極酸化皮膜の平均細孔間距離を5〜90nmにするとよいと記載されている。特許文献1では、陽極酸化皮膜の断面の透過型電子顕微鏡(TEM)または走査型電子顕微鏡(SEM)での観察により、上記平均細孔間距離を測定するものとされている。 The characteristics of the porous body such as the anodized film vary depending on the pore diameter and the distance between the pores. For example, Patent Document 1 describes a method in which an aluminum base material on which an anodized film is formed and a resin are bonded via the anodized film. Patent Document 1 discloses that the average inter-pore distance of the anodized film is 5 to 5 in order to allow the resin to penetrate into the pores of the porous anodized film and bond the aluminum base material and the resin more firmly. It is described that it should be 90 nm. In Patent Document 1, the average inter-pore distance is measured by observing a cross section of the anodized film with a transmission electron microscope (TEM) or a scanning electron microscope (SEM).
なお、非特許文献1には、溶融結晶化およびアニール処理されたポリエチレンの積層構造などを、微小角入射X線小角散乱(SI−SAXS)法で測定できることが記載されている。 Non-Patent Document 1 describes that a laminated structure of polyethylene subjected to melt crystallization and annealing treatment can be measured by a small angle incident X-ray small angle scattering (SI-SAXS) method.
微細な表面形状の観察には、特許文献1に記載のように、TEMおよびSEMなどを用いることが知られている。しかし、本発明者らの知見によれば、多孔質体をTEMおよびSEMなどで観察して孔間距離を測定しようとすると、測定ごとに得られる値のばらつきが大きく、測定値の信頼性を高めにくかった。 For observation of a fine surface shape, it is known to use TEM, SEM or the like as described in Patent Document 1. However, according to the knowledge of the present inventors, when observing the porous body with a TEM, SEM or the like and measuring the inter-hole distance, there is a large variation in the value obtained for each measurement, and the reliability of the measured value is increased. It was hard to raise.
これに対し、非特許文献1に記載のようなGI−SAXS法などによれば、被観察体の微小な形状をより正確に測定できることが期待される。しかし、GI−SAXS法は高分子化合物の薄膜などの測定には用いられているものの、不規則な構造でありX線の散乱が散漫になると予測される多孔質体の測定への使用可能性は疑問視されていた。 On the other hand, according to the GI-SAXS method as described in Non-Patent Document 1, it is expected that the minute shape of the object to be observed can be measured more accurately. However, although the GI-SAXS method is used for the measurement of thin films of polymer compounds, etc., it can be used for the measurement of porous materials that have an irregular structure and are expected to diffuse X-ray scattering. Was questioned.
上記の課題に鑑み、本発明は、多孔質体の孔間距離をより高い精度で測定できる、孔間距離の測定方法を提供することを、その目的とする。 In view of the above problems, an object of the present invention is to provide a method for measuring a distance between holes, which can measure the distance between holes of a porous body with higher accuracy.
上記課題を解決するための本発明は、入射角を微小角として、多孔質体の表面にX線を入射する工程と、前記表面から出射した散乱X線を測定する工程と、を有する、孔間距離の測定方法に関する。 The present invention for solving the above-mentioned problems includes a step of making X-rays incident on the surface of a porous body with an incident angle as a small angle, and a step of measuring scattered X-rays emitted from the surface. The present invention relates to a method for measuring an inter-distance.
本発明によれば、多孔質体の孔間距離をより高い精度で測定できる、孔間距離の測定方法が提供される。 ADVANTAGE OF THE INVENTION According to this invention, the measuring method of the distance between holes which can measure the distance between holes of a porous body with a higher precision is provided.
本発明の一実施形態に関する、多孔質体の孔間距離の測定方法では、まず、多孔質体の表面にX線を入射する。 In the method for measuring the distance between pores of a porous body according to an embodiment of the present invention, first, X-rays are incident on the surface of the porous body.
本実施形態では、このとき、入射角を微小角として、多孔質体の表面にX線を入射する。入射角を微小角とすることで、X線侵入深さを適切な範囲に制御することができ表面近傍のみを観察することができる。また、より広い領域にX線を照射することができ、一度に測定可能な面積をより大きくすることができる。 In the present embodiment, X-rays are incident on the surface of the porous body at this time with the incident angle being a minute angle. By setting the incident angle to a small angle, the X-ray penetration depth can be controlled within an appropriate range, and only the vicinity of the surface can be observed. Further, a wider area can be irradiated with X-rays, and the area that can be measured at once can be increased.
また、不規則な構造である多孔質体を観察するために、光学系を調整して広い角度範囲(q範囲)を測定することが好ましい。具体的にはqy=0.03nm−1からqy=1nm−1が好ましく、より好ましくはqy=0.01nm−1からqy=2nm−1である。 In order to observe a porous body having an irregular structure, it is preferable to adjust the optical system and measure a wide angle range (q range). Preferably q y = 1 nm -1 from q y = 0.03 nm -1 Specifically, more preferably q y = 2 nm -1 from q y = 0.01nm -1.
本発明者らの検討によれば、特許文献1に記載されているSEMおよびTEMなどでは、直径を数nmから数百nm程度にまで絞った電子線を表面に照射する。しかし、このように直径を絞った電子線は、多孔質体が有する細孔よりサイズが小さいため、照射位置のずれによって細孔の内部または縁部など入射位置の特徴が大きく変わってしまうと、放出される二次電子(SEMでの観察の場合)および電子線の透過率(TEMでの観察の場合)なども大きく変動することがある。そのため、SEMおよびTEMなどで多孔質体の表面を観察し、その形状を測定しようとすると、電子線の照射位置のわずかなずれなどによって測定結果が大きく変わってしまうことがある。 According to the study by the present inventors, in the SEM and TEM described in Patent Document 1, the surface is irradiated with an electron beam whose diameter is reduced from several nm to several hundred nm. However, since the electron beam with the reduced diameter is smaller in size than the pores of the porous body, the characteristics of the incident position such as the inside or the edge of the pore greatly change due to the deviation of the irradiation position. The emitted secondary electrons (in the case of observation with the SEM) and the transmittance of the electron beam (in the case of observation with the TEM) may also vary greatly. For this reason, when the surface of the porous body is observed with SEM, TEM, etc., and the shape is measured, the measurement result may change greatly due to a slight shift of the irradiation position of the electron beam.
これに対し、X線の入射角を微小角として、広い領域にX線を一度に照射することによって、照射位置のずれによる測定結果の変動を防ぎ、より信頼性の高い測定結果が得られるものと考えられる。 In contrast, by irradiating a wide area with X-rays at a small angle with an X-ray incident angle being small, fluctuations in measurement results due to deviations in irradiation position can be prevented, and more reliable measurement results can be obtained. it is conceivable that.
X線は、たとえばCuKα線およびMoKα線などの特性X線とすることができる。 The X-rays can be characteristic X-rays such as CuKα rays and MoKα rays, for example.
X線のビームサイズは、入射角を微小角としたときに、多孔質体の表面のより広い範囲にX線が照射され、かつ、多孔質体に照射されたときに十分な光子数の散乱光を生じる大きさであればよい。たとえば、X線のビームサイズは、直径が0.05mm以上1.0mm以下とすることができ、0.1mm以上0.5mm以下とすることが好ましい。 The X-ray beam size is such that when the incident angle is a small angle, X-rays are irradiated over a wider range of the surface of the porous body, and a sufficient number of photons are scattered when the porous body is irradiated. Any size that produces light is acceptable. For example, the X-ray beam size can be 0.05 mm to 1.0 mm in diameter, and preferably 0.1 mm to 0.5 mm.
X線により一度に照射される照射面積は、多孔質体の表面近傍における複数の細孔が一度に照射される程度であればよく、2mm2以上8mm2以下とすることができ、3mm2以上5mm2以下であることが好ましい。照射面積は、X線のビームサイズよって調整することができる。 The irradiation area irradiated at one time with X-rays may be such that a plurality of pores in the vicinity of the surface of the porous body are irradiated at once, and can be 2 mm 2 or more and 8 mm 2 or less, and 3 mm 2 or more. It is preferably 5 mm 2 or less. The irradiation area can be adjusted by the X-ray beam size.
X線の入射角度は、たとえば0.05°以上0.5°以下であればよい。なお、SEMおよびTEMなどでは、多孔質体の表面形状のみしか測定することができないが、本実施形態では、入射角度を変えることにより、X線が到達する多孔質体の表面からの深さを調整することができる。そのため、孔間距離を観察したい深さに応じて、入射角度を設定すればよい。本実施形態によれば、異なる入射角度でX線を複数回照射することで、多孔質体の表面近傍のうち、異なる複数の深さにおける孔間距離を測定すること可能である。 The incident angle of X-rays may be, for example, 0.05 ° or more and 0.5 ° or less. In SEM, TEM, etc., only the surface shape of the porous body can be measured. However, in this embodiment, the depth from the surface of the porous body to which X-rays reach can be changed by changing the incident angle. Can be adjusted. Therefore, the incident angle may be set according to the depth at which the distance between holes is desired to be observed. According to the present embodiment, it is possible to measure the inter-hole distances at a plurality of different depths in the vicinity of the surface of the porous body by irradiating the X-rays a plurality of times at different incident angles.
入射角を微小角としたX線で多孔質体を照射すると、照射された多孔質体は新たな波源となって、散乱X線が多孔質体から出射される。 When the porous body is irradiated with X-rays having a small incident angle, the irradiated porous body becomes a new wave source, and scattered X-rays are emitted from the porous body.
本実施形態では、この散乱X線を測定して得られる散乱強度曲線Iから、多孔質体の孔間距離を求めることができる。具体的には、横軸を散乱ベクトルqyとし、縦軸をqyにおける散乱強度Iとして、測定された散乱X線の強度をプロットしたときの、散乱強度Iが極大となるピーク位置qmを、平均最接近孔間距離(本明細書では、平均最接近孔間距離を孔間距離Dとする。)に対応する散乱ベクトルの位置とみなす。 In the present embodiment, the distance between pores of the porous body can be obtained from the scattering intensity curve I obtained by measuring this scattered X-ray. Specifically, the peak position q m at which the scattering intensity I is maximized when the measured scattered X-ray intensity is plotted with the horizontal axis as the scattering vector q y and the vertical axis as the scattering intensity I at q y . Is the position of the scattering vector corresponding to the average distance between the closest holes (in this specification, the average distance between the closest holes is referred to as a distance D between holes).
このとき、孔間距離Dは以下の式(1)で表される。 At this time, the inter-hole distance D is expressed by the following formula (1).
上述した方法による孔間距離Dの測定精度を高めるため、上記多孔質体は、孔間距離Dが3nm以上700nm以下の多孔質体であることが好ましく、5nm以上250nm以下の多孔質体であることがより好ましい。また、上記多孔質体は、平均孔径が3nm以上700nm以下の多孔質体出在ることが好ましく、平均孔径が5nm以上250nm以下の多孔質体であることがより好ましい。 In order to improve the measurement accuracy of the inter-pore distance D by the above-described method, the porous body is preferably a porous body having an inter-pore distance D of 3 nm or more and 700 nm or less, and is a porous body of 5 nm or more and 250 nm or less. It is more preferable. The porous body preferably has a porous body having an average pore diameter of 3 nm or more and 700 nm or less, and more preferably a porous body having an average pore diameter of 5 nm or more and 250 nm or less.
多孔質体は、表面処理したアルミニウムの表面処理皮膜であることが好ましく、陽極酸化皮膜であることがより好ましい。 The porous body is preferably a surface-treated aluminum surface-treated film, and more preferably an anodized film.
なお、平均粒子径が上記平均孔径と同程度ある微粒子の散乱体などから同様にして得られた散乱強度曲線からは、平均粒子径などを算出できることも知られている。一方で、本発明者らの知見によれば、本実施形態の方法では、平均孔径を正確に求めることができない。これは、平均粒子径や平均孔径などを算出するときは、粒子(細孔)の形状を仮定して、当該形状の三次元体(球、円柱など)の散乱を表す散乱関数に上記散乱強度曲線をフィッティングする必要があるが、当該フィッティングは孔間距離が粒子(細孔)と同程度の多孔質体においては、粒子(細孔)間の干渉による散乱の影響が強く出てしまい、フィッティングそのものが困難であり、平均孔径の算出も不可能である。 It is also known that the average particle diameter and the like can be calculated from a scattering intensity curve obtained in the same manner from a scatterer of fine particles having an average particle diameter comparable to the average pore diameter. On the other hand, according to the knowledge of the present inventors, the average pore diameter cannot be accurately determined by the method of this embodiment. This means that when calculating the average particle size, average pore size, etc., assuming the shape of the particles (pores), the above scattering intensity is represented by a scattering function that represents the scattering of a three-dimensional body (sphere, cylinder, etc.) of the shape. It is necessary to fit a curve, but in the case of a porous body whose distance between pores is the same as that of particles (pores), the fitting is strongly affected by scattering due to interference between particles (pores). As such, it is difficult to calculate the average pore diameter.
本発明を実施例に基づき詳細に説明するが、本発明はこれらの実施例に限定されない。 EXAMPLES Although this invention is demonstrated in detail based on an Example, this invention is not limited to these Examples.
[製造例1]
槽に市販のアルミニウム合金用脱脂剤「NE−6(メルテックス株式会社製)」7.5%を水に投入した後で60℃として加熱溶解し、アルミニウム合金板を5分浸漬し、よく水洗した。
[Production Example 1]
7.5% of commercially available aluminum alloy degreasing agent “NE-6 (manufactured by Meltex Co., Ltd.)” was added to water and dissolved in a bath at 60 ° C., immersed in an aluminum alloy plate for 5 minutes, and thoroughly washed with water. did.
続いて別の槽に50℃とした10%苛性ソーダ水溶液を用意し、これに上記アルミニウム合金板を1分間浸漬してよく水洗した。続いて別の槽に40℃とした40%硝酸液を用意し、これに上記アルミニウム合金板を1分間浸漬してよく水洗した。続いて別の槽に40℃とした20%硫酸水溶液を用意し、この槽に上記アルミニウム合金板および鉛板を浸漬した。直流電源装置「PPK200−18−L De(松定プレシジョン株式会社製)」の陽極を上記アルミニウム合金板の一部に結線し、陰極を上記鉛板に結線して、電流密度が2.5A/dm2となる低電流制御で10分陽極酸化し、その後、水洗し、80℃とした温風乾燥機に20分入れて乾燥して、試験片1を製造した。 Subsequently, a 10% aqueous solution of caustic soda at 50 ° C. was prepared in a separate tank, and the aluminum alloy plate was immersed in this for 1 minute and washed with water. Subsequently, a 40% nitric acid solution at 40 ° C. was prepared in another tank, and the aluminum alloy plate was immersed in it for 1 minute and washed with water. Subsequently, a 20% sulfuric acid aqueous solution at 40 ° C. was prepared in another tank, and the aluminum alloy plate and the lead plate were immersed in this tank. The anode of the DC power supply device “PPK200-18-L De (manufactured by Matsusada Precision Co., Ltd.)” is connected to a part of the aluminum alloy plate, the cathode is connected to the lead plate, and the current density is 2.5 A / A test piece 1 was manufactured by anodizing for 10 minutes under low current control at dm 2 , then washing with water and placing in a hot air dryer at 80 ° C. for 20 minutes and drying.
[製造例2]
40℃とした20%硫酸水溶液に上記アルミニウム合金板および鉛板を浸漬して、上記直流電源装置の陽極を上記アルミニウム合金板の一部に結線し、陰極を上記鉛板に結線して、1.5A/dm2の電流密度になる低電流制御で10分陽極酸化した以外は製造例1と同様として、試験片2を製造した。
[Production Example 2]
The aluminum alloy plate and the lead plate are immersed in a 20% sulfuric acid aqueous solution at 40 ° C., the anode of the DC power supply device is connected to a part of the aluminum alloy plate, and the cathode is connected to the lead plate. A test piece 2 was produced in the same manner as in Production Example 1 except that anodization was performed for 10 minutes under low current control to obtain a current density of 0.5 A / dm 2 .
[製造例3]
30℃とした20%硫酸水溶液に上記アルミニウム合金板および鉛板を浸漬して、上記直流電源装置の陽極を上記アルミニウム合金板の一部に結線し、陰極を上記鉛板に結線して、1.5A/dm2の電流密度になる低電流制御で10分陽極酸化した以外は製造例1と同様として、試験片3を製造した。
[Production Example 3]
The aluminum alloy plate and the lead plate are immersed in a 20% sulfuric acid aqueous solution at 30 ° C., the anode of the DC power supply device is connected to a part of the aluminum alloy plate, and the cathode is connected to the lead plate. A test piece 3 was produced in the same manner as in Production Example 1 except that anodization was performed for 10 minutes under low current control at a current density of 5 A / dm 2 .
[製造例4]
20℃とした20%硫酸水溶液に上記アルミニウム合金板および鉛板を浸漬して、上記直流電源装置の陽極を上記アルミニウム合金板の一部に結線し、陰極を上記鉛板に結線して、1.5A/dm2の電流密度になる低電流制御で10分陽極酸化した以外は製造例1と同様として、試験片4を製造した。
[Production Example 4]
The aluminum alloy plate and the lead plate are immersed in a 20% sulfuric acid aqueous solution at 20 ° C., the anode of the DC power supply device is connected to a part of the aluminum alloy plate, and the cathode is connected to the lead plate. A test piece 4 was produced in the same manner as in Production Example 1 except that anodization was performed for 10 minutes under low current control at a current density of 5 A / dm 2 .
[製造例5]
10℃とした20%硫酸水溶液に上記アルミニウム合金板および鉛板を浸漬して、上記直流電源装置の陽極を上記アルミニウム合金板の一部に結線し、陰極を上記鉛板に結線して、1.5A/dm2の電流密度になる低電流制御で10分陽極酸化した以外は製造例1と同様として、試験片5を製造した。
[Production Example 5]
The aluminum alloy plate and the lead plate are immersed in a 20% sulfuric acid aqueous solution at 10 ° C., the anode of the DC power supply device is connected to a part of the aluminum alloy plate, and the cathode is connected to the lead plate. A test piece 5 was produced in the same manner as in Production Example 1 except that anodization was performed for 10 minutes with low current control to obtain a current density of 0.5 A / dm 2 .
[実施例1]
すれすれ入射小角X線散乱(GISAXS)測定用ステージ(以下、ステージとも称する)が設置された小角X線散乱測定装置NANO−Viewer(リガク社製)を用いて、試験片1〜試験片5のGISAXS測定を行った。X線にはCuKa線(波長:0.154nm)を用い、ピンホールスリット(第1スリット:φ0.2mm、第2スリット:φ0.1mm、第3スリット:φ0.25mm)にてビームサイズを直径0.25mmの円形に絞った。長さ45mm、幅18mm、厚み2mmの試験片1〜試験片5を、X線入射方向が幅方向に平行になるようにステージ上に設置した。透過X線の強度を用いて試験片表面とX線の高さが一致するようにステージ高さを調整した。X線の試料への入射角度θHを0.1°とし、検出器に2次元検出器PILATUS 100K(Dectoris社)を用いてGISAXS測定を行った。試料と検出器の距離は1340mmとした。
[Example 1]
Using a small-angle X-ray scattering measurement device NANO-Viewer (manufactured by Rigaku Corporation) on which a grazing incidence small-angle X-ray scattering (GISAXS) measurement stage (hereinafter also referred to as a stage) is installed, GISAXS of test pieces 1 to 5 Measurements were made. The X-ray uses CuKa ray (wavelength: 0.154 nm), and the beam size is changed by the pinhole slit (first slit: φ0.2 mm, second slit: φ0.1 mm, third slit: φ0.25 mm) It was squeezed into a 0.25 mm circle. Test pieces 1 to 5 having a length of 45 mm, a width of 18 mm, and a thickness of 2 mm were placed on the stage so that the X-ray incident direction was parallel to the width direction. The stage height was adjusted using the transmitted X-ray intensity so that the test piece surface and the X-ray height matched. GISAXS measurement was performed using an X-ray incident angle θ H of 0.1 ° and a two-dimensional detector PILATUS 100K (Decortis) as a detector. The distance between the sample and the detector was 1340 mm.
非特許文献1に記載の方法に従って、得られた2次元データの強度を試料表面に平行な方向(in−plane方向)へ走査し、散乱ベクトルの大きさqyに対してプロットすることで散乱強度曲線I(qy)〔縦軸がI(qy)、横軸がqy〕を得た。散乱強度曲線I(qy)におけるピーク位置qmから式(1)に従って孔間距離Dを求めた。 According to the method described in Non-Patent Document 1, the intensity of the obtained two-dimensional data is scanned in a direction parallel to the sample surface (in-plane direction) and plotted against the magnitude q y of the scattering vector. An intensity curve I (q y ) [vertical axis is I (q y ) and horizontal axis is q y ] was obtained. The inter-hole distance D was determined from the peak position q m in the scattering intensity curve I (q y ) according to the equation (1).
[実施例2]
θHを0.2°とした他は実施例1と同様にして、孔間距離Dを求めた。
[Example 2]
The inter-hole distance D was determined in the same manner as in Example 1 except that θ H was 0.2 °.
[実施例3]
θHを0.25°とした他は実施例1と同様にして、孔間距離Dを求めた。
[Example 3]
The inter-hole distance D was determined in the same manner as in Example 1 except that θ H was 0.25 °.
[実施例4]
θHを0.3°とした他は実施例1と同様にして、孔間距離Dを求めた。
[Example 4]
The inter-hole distance D was determined in the same manner as in Example 1 except that θ H was 0.3 °.
[比較例1]
日本電子株式会社 JSM−6701Fを用い、試験片1〜試験片5の走査型電子顕微鏡(SEM)観察を行った。加速電圧は5.0kV、観察倍率は10万倍とした。1辺500nmの正方形の視野内から10対の隣り合う孔を無作為に選択して孔間距離を測定し、その平均値を孔間距離とした(比較例1−1)。同じ大きさの異なる視野を同様に評価し、孔間距離Dを得た(比較例1−2)。
[Comparative Example 1]
Scanning electron microscope (SEM) observation of test piece 1 to test piece 5 was performed using JEOL JSM-6701F. The acceleration voltage was 5.0 kV and the observation magnification was 100,000 times. Ten pairs of adjacent holes were randomly selected from within a 500 nm square field of view, the distance between the holes was measured, and the average value was defined as the distance between the holes (Comparative Example 1-1). Different fields of view having the same size were evaluated in the same manner to obtain an inter-hole distance D (Comparative Example 1-2).
実施例1〜実施例4、比較例1−1および比較例1−2における、評価面積、観察深さ、および試験片1〜試験片5について測定された孔間距離Dの値を、表1に示す。 Table 1 shows the evaluation area, the observation depth, and the inter-hole distance D measured for each of the test pieces 1 to 5 in Examples 1 to 4, Comparative Example 1-1, and Comparative Example 1-2. Shown in
表1から明らかなように、入射角を微小角として試験片の表面にX線を入射し、表面から出射した散乱X線を測定することで、より広い面積を評価することができ、かつ、孔間距離Dがより広くなるように作製したアルマイトについてはより大きい孔間距離の値が、孔間距離Dがより狭くなるように作製したアルマイトについてはより小さい孔間距離の値が、測定されていた。これは、より広い面積を評価することができたためと考えられる。 As is clear from Table 1, a wider area can be evaluated by measuring the scattered X-rays emitted from the surface by making X-rays incident on the surface of the test piece with a small angle of incidence, and For anodized with a larger inter-hole distance D, a larger inter-hole distance value is measured, and for an anodized with a smaller inter-hole distance D, a smaller inter-hole distance value is measured. It was. This is probably because a wider area could be evaluated.
また、入射角を微小角として試験片の表面にX線を入射し、表面から出射した散乱X線を測定することで、入射角を変更することで、深さ方向の孔間距離の変化も評価することができていた。 In addition, by changing the incident angle by measuring the scattered X-rays emitted from the surface by entering X-rays on the surface of the test piece with a small incident angle, the distance between holes in the depth direction can also be changed. It was possible to evaluate.
一方で、SEMによる観察では、同じ試験片について測定しても、測定ごとに得られた孔間距離の値が変動していた。これは、空孔の開口径に対して比較的狭い範囲しか測定することができなかったためと考えられる。 On the other hand, in the observation by SEM, even if it measured about the same test piece, the value of the distance between holes obtained for every measurement was changing. This is probably because only a relatively narrow range could be measured with respect to the opening diameter of the holes.
[比較例2]
実施例1〜実施例4において得られた散乱強度曲線I(qy)〔縦軸がI(qy)、横軸がqy〕から孔径を求めるため、孤立した球状粒子の散乱関数である式(2)を用いたカーブフィッティングを試みた。カーブフィッティングにはデータ解析ソフトウェアであるWaveMetrics社製Igor Proを用いた。
[Comparative Example 2]
It is a scattering function of isolated spherical particles in order to obtain the pore diameter from the scattering intensity curves I (q y ) obtained in Examples 1 to 4 (the vertical axis is I (q y ) and the horizontal axis is q y ). We tried curve fitting using equation (2). For curve fitting, Igor Pro manufactured by WaveMetrics, which is data analysis software, was used.
式(2)において、Aは任意の定数であり、Rは球状粒子に近似する球の半径であり、q=qxである。 In the formula (2), A is an arbitrary constant, R is the radius of a sphere approximating the spherical particles, it is q = q x.
しかし、カーブフィッティングをすることはできなかった。これは、孔間距離が小さく、各孔からの散乱がお互いに干渉するためだと考えられる。 However, curve fitting was not possible. This is thought to be because the distance between the holes is small and the scattering from each hole interferes with each other.
[比較例3]
式(2)を孤立した円柱の散乱関数である式(3)とした以外は比較例2と同様にして、カーブフィッティングを試みた。
[Comparative Example 3]
Curve fitting was attempted in the same manner as in Comparative Example 2 except that Formula (2) was replaced by Formula (3), which is the scattering function of an isolated cylinder.
しかし、カーブフィッティングをすることはできなかった。これは、孔間距離が小さく、各孔からの散乱がお互いに干渉するためだと考えられる。 However, curve fitting was not possible. This is thought to be because the distance between the holes is small and the scattering from each hole interferes with each other.
本発明によれば、多孔質体の孔間距離をより精度よく測定することが可能となる。そのため、本発明は、非破壊での多孔質体の評価や、出荷前の検査などに有効に活用することができる。 ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to measure the distance between holes of a porous body more accurately. Therefore, the present invention can be effectively used for nondestructive evaluation of a porous body, inspection before shipment, and the like.
Claims (6)
前記表面から出射した散乱X線を測定する工程と、
を有する、孔間距離の測定方法。 A step of entering X-rays on the surface of the porous body with an incident angle as a minute angle;
Measuring scattered X-rays emitted from the surface;
A method for measuring a distance between holes.
前記複数回の入射のそれぞれによって前記表面から出射した散乱X線を測定して、
前記多孔質体の表面からの深さが異なる複数の位置での孔間距離を測定する、
請求項1または2に記載の孔間距離の測定方法。 Injecting X-rays to the surface of the porous body multiple times at different incident angles,
Measure scattered X-rays emitted from the surface by each of the multiple incidences;
Measuring the inter-hole distances at a plurality of positions having different depths from the surface of the porous body,
The method for measuring a distance between holes according to claim 1 or 2.
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| US5221724A (en) * | 1987-08-12 | 1993-06-22 | Wisconsin Alumni Research Foundation | Polysiloxane polyurea urethanes |
| JP2001349849A (en) * | 2000-04-04 | 2001-12-21 | Rigaku Corp | Uneven-density sample analyzing method and its apparatus, and system |
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