JP2019160941A - Inspection equipment and inspection method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inspect a semiconductor device capable of minimizing parasitic inductance while always maintaining a constant minimum length of an electrical connection path even when the diameter (size) of a wafer to be inspected changes. The task is to provide an inspection method. SOLUTION: A plurality of types of wafer chuck plates and contact plates having different diameters of target wafers can be removably held on a chuck stage by changing their positions, and a probe for a surface electrode. A semiconductor device inspection device provided with a plurality of inductance canceling bars having different lengths arranged in parallel with the upper surface of the chuck stage along a straight line connecting the contact portion and the contact portion of the back electrode probe, and an inspection method using the same. The above problem is solved by providing. [Selection diagram] Fig. 1

Description

  The present invention relates to a semiconductor device inspection apparatus and inspection method, and more particularly, to a semiconductor device inspection apparatus and inspection method for inspecting the electrical characteristics of a semiconductor device having electrodes on both sides of a wafer substrate in the wafer state. .

  Power semiconductor devices such as power transistors, power MOSFETs, and IGBTs (Insulated Gate Bipolar Transistors), and semiconductor devices such as LEDs and semiconductor lasers are configured so that current flows up and down the chip, and both front and back surfaces of the wafer substrate Some have electrodes. For this reason, in order to inspect the electrical characteristics of such a semiconductor device in the wafer state, it is necessary to contact the measurement probe on both the front and back surfaces of the wafer, and the measurement is performed on the back surface immediately below the semiconductor device to be inspected. Various inspection apparatuses have been proposed to bring the probe into contact.

  For example, in Patent Document 1, a large number of probes are arranged in a chuck stage that holds a wafer, and a probe located directly under the back surface of a device under measurement is selectively connected to a tester. An inspection apparatus is disclosed that measures the electrical characteristics of a semiconductor device having electrodes on both sides of a substrate.

  However, in the inspection apparatus disclosed in Patent Document 1, in order to sequentially inspect all the semiconductor devices formed on the wafer, it is necessary to move the chuck stage relative to the probe disposed on the upper part. The length of the cable connecting the probe and the tester arranged in the chuck stage inevitably tends to be long. If the length of the cable connecting the probe and tester is increased, the parasitic inductance of the measurement path constituted by the cable increases, which is necessary for large current measurements and dynamic characteristic tests that are close to the actual value of the semiconductor device to be inspected. There is a drawback that transient characteristics cannot be obtained. For this reason, even for semiconductor devices that have passed the inspection in the wafer state, characteristic defects may be found in the final full-spec inspection performed after the bonding, molding, burn-in process, etc. Various processes performed after the inspection in the state are wasted, causing inconveniences such as an increase in product cost and an increase in waste amount.

  On the other hand, in Patent Documents 2 and 3, the semiconductor device is placed on a conductive base larger than that of the semiconductor device, and the probe for the surface electrode is brought into contact with the surface of the semiconductor device, and at the same time for the back electrode. An inspection apparatus is disclosed in which a probe is brought into contact with an exposed portion of the base on which the semiconductor device is not mounted. However, these inspection apparatuses disclosed in Patent Documents 2 and 3 inspect individual semiconductor devices, and do not inspect the semiconductor devices as they are in a wafer state. It does not give any suggestion as to how accurately the characteristics of the semiconductor device it has are measured in the wafer state.

  In view of the above situation, in Japanese Patent Application Laid-Open No. 2004-26883, the present applicant has disclosed, as an apparatus for inspecting a semiconductor device in a wafer state, a wafer holding unit for holding a wafer to be inspected on the upper surface of a chuck stage, and wafer holding A probe contact region that is approximately the same size as the portion, electrically connects the wafer holding portion and the probe contact region, and horizontally connects the front surface electrode probe and the back surface electrode probe above the chuck stage. A semiconductor device inspection apparatus has been proposed which is arranged at a certain distance.

  According to such a semiconductor device inspection apparatus, even when the chuck stage is moved and the front surface electrode probe relatively moves in the wafer to be inspected, the back surface electrode probe is connected to the front surface electrode probe and the surface electrode probe. Since the probe contact region can be relatively moved while maintaining a constant distance, the length of the electrical connection path between the tester and the front surface electrode probe and the back surface electrode probe is always the fixed shortest length. The superb advantage is that the parasitic inductance generated in the measurement path can be minimized and the transient characteristics required for high current measurement and dynamic characteristic test close to the actual value of the semiconductor device can be obtained. Is obtained.

JP-A-5-333098 JP 2007-40926 A JP 2008-101944 A JP2013-118320A

  As described above, the semiconductor device inspection apparatus previously proposed by the present applicant in Patent Document 4 has extremely excellent advantages, and the wafer holding portion on the chuck stage and the probe contact region are arranged close to each other. By arranging, the length of the electrical connection path between the front electrode probe and the back electrode probe is set to the shortest. However, when there are multiple types of wafer diameters that are assumed to be measured, the size of the wafer holder and the probe contact area are set according to the maximum diameter wafer. Even when measuring a wafer with a small diameter, the length of the electrical connection path between the front electrode probe and the back electrode probe is the same, and the parasitic inductance does not change. By avoiding this situation and trying to minimize the length of the electrical connection path according to the size of the wafer to be inspected, an inspection device designed for each wafer size planned for inspection. There is a problem that it is necessary to prepare and is expensive.

  The present invention has been made in order to further improve the usability of the semiconductor device inspection apparatus previously proposed by the present applicant in Patent Document 4, and even when the diameter (size) of the inspection target wafer changes, the tester Semiconductor device inspection apparatus capable of minimizing parasitic inductance generated in the measurement path while always maintaining the length of the electrical connection path between the probe for the front electrode and the probe for the back electrode at a constant shortest length And an inspection method using the same.

  As a result of intensive studies to solve the above problems, the present inventors have compared the size of the wafer holding part set on the chuck stage in the semiconductor device inspection apparatus disclosed in Patent Document 4 above. It is difficult to reduce the parasitic inductance by shortening the electrical connection path in accordance with the inspection of a relatively small diameter wafer, and the wafer holder set on the chuck stage. It has been speculated that this may be caused by the fixed size and position of the probe contact region.

  18 is a plan view showing only the chuck stage and its periphery in the semiconductor device inspection apparatus disclosed in Patent Document 4, and FIG. 19 is the relationship between the front surface electrode probe, the back surface electrode probe, and the chuck stage. As shown in FIGS. 18 and 19, the wafer holding part α and the probe contact region β are set at a certain position on the upper surface of the chuck stage 102 with a certain size. The distance D between the contact portion of the probe PA for contact and the contact portion of the probe PB for the back electrode is set so that the distance between the wafer holding portion α and the probe contact region β matches the positional relationship between the wafer holding portion α and the probe contact region β. It is set to be substantially the same as the distance L between the centers.

  Therefore, when the size of the wafer W to be inspected, that is, the diameter is large and the size is substantially the same as that of the wafer holding part α, as shown in FIG. The distance D from the contact portion of the electrode probe PB is the minimum length allowed in this semiconductor device inspection apparatus. For example, as shown in FIG. 21, the diameter of the wafer W to be inspected is small. However, since the distance D between the contact portion of the front surface electrode probe PA and the contact portion of the back surface electrode probe PB does not change, a parasitic inductance determined by the assumed maximum wafer size diameter may be generated. It is thought that there is not.

  As a result of further research efforts based on such knowledge, the present inventors have not fixedly set the wafer holding part and the probe contact area on the chuck stage, but rather a wafer that functions as a wafer holding part. Create a chuck plate and a contact plate that functions as a probe contact area, prepare multiple sets according to the size of the wafer to be inspected, and change the position on the chuck stage to hold it detachably As a result, it has been found that the parasitic inductance generated in the measurement path can always be minimized even when the diameter of the wafer to be inspected changes.

That is, the present invention relates to an inspection of a semiconductor device having a front surface electrode probe and a back surface electrode probe, a chuck stage movable relative to both probes, and a tester electrically connected to both probes. A device,
(1) The chuck stage is
(1-1) The first wafer chuck plate on which the wafer to be inspected is held on the upper surface, and the first contact plate on which the back electrode probe contacts the upper surface are overlapped on the chuck stage. A plate holding first means for detachably holding the first position,
(1-2) A second wafer chuck plate having a smaller diameter than the first wafer chuck plate and a second contact plate having a smaller diameter than the first contact plate are arranged on the chuck stage so that the plates do not overlap. In two positions, it has plate holding second means for holding it detachably,
(1-3) WPc ₁ and CPc ₁ are the centers of the top surfaces of the first wafer chuck plate and the first contact plate, respectively, when the first position and the second position are held at the first position. When the centers of the upper surfaces of the second wafer chuck plate and the second contact plate when held at the second position are WPc ₂ and CPc ₂ , respectively, WPc ₂ and CPc ₂ are WPc ₁ and CPc ₁ . The distance between WPc ₂ and CPc ₂ is selected to be shorter than the distance between WPc ₁ and CPc ₁ ,
(2) The surface electrode probe has a contact portion that comes into contact with the surface electrode of the wafer to be inspected held on the first or second wafer chuck plate,
(3) The back electrode probe has a contact portion that contacts the upper surface of the first or second contact plate,
(4) When held at the first position or the second position, the upper surface of the first or second wafer chuck plate and the upper surface of the first or second contact plate are electrically connected to each other. And
(5) The contact portion of the front surface electrode probe or the back surface electrode is disposed in parallel with the upper surface of the chuck stage along a straight line connecting the contact portion of the front surface electrode probe and the contact portion of the back surface electrode probe. A conductive bar constituting a part of an electrical connection path between the contact portion of the probe for the tester and the tester, the first inductance canceling bar having a length corresponding to the distance between the WPc ₁ and the CPc ₁ the WPc ₂ and CPc has a length corresponding to the distance between the _two, and a shorter second inductance canceling bar than the first inductance cancellation bars,
The above-described problems are solved by providing a semiconductor device inspection apparatus.

  As described above, in the inspection apparatus of the present invention, the wafer chuck plate for holding the wafer to be inspected and the contact plate in contact with the contact portion of the back surface electrode probe are separated from the chuck stage in size of the wafer to be inspected. That is, according to the diameter of the wafer, for example, a plurality of sets are prepared as a set of a first wafer chuck plate and a first contact plate, or a set of a second wafer chuck plate and a second contact plate. In addition, the wafer chuck plate and the contact plate are in relation to the chuck stage, for example, the first wafer chuck plate and the first contact plate are in the first position, and the second wafer chuck plate and the second contact plate are in the second position. In this way, the mounting position is changed for each set so as to be detachably held.

  Therefore, in the inspection apparatus of the present invention, even when the diameter of the wafer to be inspected changes, the first wafer chuck plate and the first contact plate, or the second contact plate having a size suitable for the wafer having the diameter. Since the wafer chuck plate and the second contact plate can be held at the first position or the second position on the chuck stage suitable for inspecting the wafer of the diameter, the distance between the wafer chuck plate and the contact plate can be inspected. The required minimum length can always be set in accordance with the diameter of the wafer.

  In addition, in the inspection apparatus of the present invention, for an inductance cancellation bar arranged in parallel with the upper surface of the chuck stage along a straight line connecting the contact portion of the front surface electrode probe and the contact portion of the back surface electrode probe, for example, A first inductance cancellation bar having a length corresponding to the distance between the centers of the first wafer chuck plate and the first contact plate when held at the first position, and a second wafer chuck when held at the second position A plurality of second inductance cancellation bars having a length corresponding to the center-to-center distance between the plate and the second contact plate are prepared. Therefore, in the inspection apparatus of the present invention, in addition to changing the position of the wafer chuck plate and the contact plate to be held on the chuck stage according to the diameter of the wafer to be inspected, the changed wafer chuck plate Even if the wafer diameter changes by using either the first inductance cancellation bar or the second inductance cancellation bar according to the size and holding position of the contact plate, the contact portion of the front surface electrode probe or the back surface electrode probe The length of the electrical connection path that connects the contact part and the tester is always kept at a certain shortest length, and the parasitic inductance generated in the measurement path can always be kept at a minimum, enabling accurate measurement. .

  In the inspection apparatus of the present invention, plate first holding means for detachably holding the first wafer chuck plate and the first contact plate at the first position on the chuck stage includes the first wafer chuck plate and the first contact plate. There is no particular limitation on the specific structure and mechanism as long as it can be detachably held at one position. However, from the viewpoint of relatively strong holding force and relatively easy attachment / detachment control, the first wafer chuck plate or the first contact plate is placed at the first position in the plate holding first means. The first suction port of the wafer chuck plate or the first suction port of the contact plate that opens in the upper surface region of the chuck stage facing the back surface of the first wafer chuck plate or the first contact plate, and the first suction port of the wafer chuck plate Or it is preferable that the suction means connected to the contact plate 1st suction port is included.

  When the plate holding first means includes the wafer chuck plate first suction port or the contact plate first suction port described above and the suction unit connected thereto, the operation of the suction unit is turned on / off. Thus, the first wafer chuck plate or the first contact plate can be held at the first position on the chuck stage, or the holding can be released.

  The same applies to plate holding second means for detachably holding the second wafer chuck plate or the second contact plate at the second position on the chuck stage. The second wafer chuck plate and the second contact plate are set at the second position. As long as it can be detachably held, there is no particular limitation on the specific structure and mechanism of the plate holding second means. However, for the same reason as described for the plate holding first means, the plate holding second means is configured such that when the second wafer chuck plate or the second contact plate is placed at the second position, Connected to the second suction port of the wafer chuck plate or the second suction port of the contact chuck plate that opens in the upper surface area of the chuck stage facing the back surface of the two contact plates, and the second suction port of the wafer chuck plate or the contact plate. It is preferable to include a suction means to be operated.

  When the plate holding second means includes the wafer chuck plate second suction port or the contact plate second suction port described above and the suction unit connected thereto, the operation of the suction unit is turned on / off. Thus, the second wafer chuck plate or the second contact plate can be held at the second position on the chuck stage, or the holding can be released.

  The first and second wafer chuck plates that are in contact with the upper surface of the chuck stage and the back surfaces of the first and second contact plates may be flat, but are held at the first position or the second position by suction. In order to ensure the reliability, the first or second suction opening on the upper surface of the chuck stage when each plate is placed on the first position or the second position on the back surface of each plate. It is desirable to provide a bottomed groove that communicates with the mouth at least at one location and is closed within the back of each plate. In addition, being closed in the back surface of each plate means that the groove | channel provided in the back surface is not connecting outside in parts other than a back surface.

  Alternatively, instead of providing the above-described grooves on the back surfaces of the first and second wafer chuck plates and the first and second contact plates, the respective plates are mounted at the first position or the second position. A bottomed groove that communicates with the first or second suction port in at least one place and is closed within the upper surface of the chuck stage may be provided in the upper surface region of the chuck stage covered with the back surface of the chuck stage. Further, the first and second wafer chuck plates may be provided with the groove on the upper surface of the chuck stage, and the first and second contact plates may be provided with the groove on the back surface of each contact plate. good.

  Furthermore, in a preferred example of the inspection apparatus of the present invention, the chuck stage has at least two first convex portions or first concave portions for positioning the first wafer chuck plate at the first position on the upper surface thereof. It is desirable to provide at least two second convex portions or second concave portions for positioning the second wafer chuck plate at the second position. When the chuck stage in the inspection apparatus of the present invention has such a positioning convex portion or concave portion, when placing the first wafer chuck plate or the second wafer chuck plate on the chuck stage, The advantage that it can be easily positioned at the first position or the second position is obtained.

  The first convex portion or the first concave portion and the second convex portion or the second concave portion may be provided completely separately, and one or more of the first convex portion or the first concave portion may be provided in the first. It may serve as two convex portions or a second concave portion, and may have one or more common convex portions or concave portions. This means that the first convex portion or the first concave portion for positioning the first contact plate described below in the first position, and the second convex portion or the second concave portion for positioning the second contact plate in the second position. The same applies to the recesses.

  In addition, when the chuck stage has the convex portion or concave portion for positioning as described above, the first wafer chuck plate and the second wafer chuck plate positioned at a predetermined position using the convex portion or concave portion are used. Needless to say, the rear surface is provided with a concave portion or a convex portion that fits with the convex portion or the concave portion at the time of positioning.

  Furthermore, in a preferred example of the inspection apparatus of the present invention, the chuck stage has at least two first convex portions or first concave portions for positioning the first contact plate at the first position on the upper surface thereof, It is desirable to provide at least two second convex portions or second concave portions for positioning the second contact plate at the second position. When the chuck stage in the inspection apparatus of the present invention has such a convex or concave portion for positioning, it is easy to place the first contact plate or the second contact plate on the chuck stage. The advantage is that it can be positioned in the first position or the second position.

  As described for the first or second wafer chuck plate, when the chuck stage has the above-described positioning convex portion or concave portion, it is positioned at a predetermined position using the convex portion or concave portion. Needless to say, the back surface of the first contact plate and the second contact plate is provided with a concave portion or a convex portion that fits into the convex portion or the concave portion at the time of positioning.

  In still another preferred example, the chuck stage in the inspection apparatus of the present invention has a wafer suction port and suction means connected to the wafer suction port on the upper surface thereof. The wafer suction port is for wafer suction that opens to the back surface of the first wafer chuck plate or the second wafer chuck plate when the first wafer chuck plate or the second wafer chuck plate is placed at the first position or the second position. When the wafer suction port is sucked by operating the suction means, the suction negative pressure is opened on the back surface of the first wafer chuck plate or the second wafer chuck plate. From the negative pressure inlet for wafer suction to be supplied to a number of wafer suction holes opened on the upper surface of the first wafer chuck plate or the second wafer chuck plate through the communication path formed in each plate, The wafer placed thereon is sucked.

  Two wafer suction ports may be provided on the upper surface of the chuck stage for the first wafer chuck plate and the second wafer chuck plate, or only one wafer suction port may be provided. It may be shared by both the case of using and the case of using the second wafer chuck plate.

  In another preferred example of the inspection apparatus according to the present invention, the chuck stage comes into contact with the back surface of the inspection target wafer existing on the first wafer chuck plate held at the first position. A first lift pin for moving the wafer up and down, and a second lift pin for moving the wafer to be inspected in contact with the back surface of the wafer to be inspected on the second wafer chuck plate held at the second position. is doing.

  When the chuck stage in the inspection apparatus of the present invention has the first lift pin and the second lift pin, the wafer is inspected using the first wafer chuck plate held in the first position. In addition, even when the wafer is inspected using the second wafer chuck plate held in the second position, the inspection is performed on the first or second lift pin in the raised position using the wafer transfer device. After placing the target wafer, the first or second lift pin is lowered to place the inspection target wafer on the first or second wafer chuck plate, or conversely, the first or second lift pin is raised. Thus, the inspected wafer can be lifted upward from the first or second wafer chuck plate and carried out by the wafer transfer device.

  In still another preferred example, the inspection apparatus of the present invention includes a control device, the control device relates to a means for receiving input of information on a diameter (size) of a wafer to be inspected, and a diameter of the wafer. A storage device for storing the correspondence between the information and the first means for holding the plate or the second means for holding the plate and / or the correspondence between the information on the diameter of the wafer and the first lift pin or the second lift pin; Based on the information on the diameter and the stored correspondence, either the plate holding first means or the plate holding second means and / or either the first lift pin or the second lift pin are selectively operated. It has a means to make.

  When the inspection apparatus of the present invention is equipped with the above-described control apparatus, the first means for holding the plate is used when necessary by automatically or manually inputting information on the diameter (size) of the wafer to be inspected next to the control apparatus. Alternatively, the second means for holding the plate, and further, the first lift pin or the second lift pin is automatically selected and activated, so that there is an advantage that manual confirmation and switching operation are not required.

Furthermore, the present invention is a semiconductor device inspection method performed using the above-described semiconductor device inspection apparatus according to the present invention,
A step of recognizing the diameter (size) of the wafer to be inspected next;
Determining whether or not the wafer chuck plate and the contact plate and the inductance cancel bar need to be replaced based on the recognized diameter of the wafer;
When it is determined that the replacement is necessary, the first wafer chuck plate and the first contact plate, or the second wafer chuck plate and the second contact plate are moved to the first position on the chuck stage or based on the recognized wafer diameter. Placing in the second position;
Activating either the plate holding first means or the plate holding second means based on the recognized wafer diameter;
When it is determined that replacement is necessary, based on the recognized diameter of the wafer, either the first inductance cancellation bar or the second inductance cancellation bar is replaced with the contact portion of the front surface electrode probe or the back surface electrode probe. Connecting in the electrical connection path between the tester and the tester,
The above-described problems are solved by providing a method for inspecting a semiconductor device including:

  As described above, according to the inspection method of the present invention, the diameter (size) of the wafer to be inspected next is recognized, and based on the recognized diameter of the wafer, the wafer chuck plate, the contact plate, and the inductance cancellation bar Since the necessity of replacement is determined and necessary replacement is performed, and the plate holding first means or plate holding second means to be operated necessary for the replacement is switched, the diameter of the inspection target wafer is reduced. Even if there is a change, the distance between the contact part of the probe for the front electrode and the contact part of the probe for the back electrode is always kept to the minimum necessary length, and the influence of the parasitic inductance generated in the measurement path is affected. There is an advantage that the semiconductor device formed on the wafer can be inspected while being minimized.

  Further, the inspection method of the present invention includes a step of operating either the first lift pin or the second lift pin based on the recognized diameter of the wafer in a preferred example. When the inspection method of the present invention includes such a process, the diameter of the wafer to be inspected changes and either the first wafer chuck plate or the second wafer chuck plate is held on the chuck stage. However, it is ensured that the inspection target wafer is carried onto the wafer chuck plate and the inspected wafer is carried out from the wafer chuck plate.

  In the above description, the case where two sets of the first wafer chuck plate and the first contact plate and the second wafer chuck plate and the second contact plate having a smaller diameter are provided. The semiconductor device inspection apparatus and the inspection method of the invention are not limited to using the first wafer chuck plate and the first contact plate, and the second wafer chuck plate and the second contact plate having two different diameters. .

  In addition to the first wafer chuck plate and the first contact plate, the second wafer chuck plate and the second contact plate, the inspection apparatus and the inspection method of the present invention further have a smaller diameter than the second wafer chuck plate and the second contact plate. The third wafer chuck plate and the third contact plate may be provided. In that case, the first wafer chuck plate, the first contact plate, the second wafer chuck plate, and the second contact plate are the same as described above. All also applies to the second wafer chuck plate and the second contact plate and the third wafer chuck plate and the third contact plate. The same applies when a fourth wafer chuck plate and a fourth contact plate having a smaller diameter than the third wafer chuck plate and the third contact plate are provided.

  According to the semiconductor device inspection apparatus and inspection method of the present invention, the diameters of the wafer chuck plate and the contact plate, their positions on the chuck stage, and the inductance canceling bar according to the difference in diameter of the wafer to be inspected. Since the length can be changed, even if the diameter of the wafer to be inspected changes, the length of the electrical connection path between the tester and the front electrode probe and between the tester and the back electrode probe is always set to a certain minimum length. Can be maintained and inspected. Thereby, according to the inspection apparatus and the inspection method of the present invention, it is possible to minimize the parasitic inductance generated in the measurement path and obtain the transient characteristics necessary for the large current measurement and dynamic characteristic test close to the actual value of the semiconductor device. Thus, there is an advantage that the semiconductor device can be inspected with high accuracy in the wafer state.

  Further, according to the inspection apparatus and inspection method of the present invention, a wafer chuck plate that functions as a wafer holding portion on the upper surface of the chuck stage, instead of using the upper surface of the chuck stage itself as a wafer holding portion or a probe contact region, Since the contact plate functioning as the probe contact area is detachably held and used, if the wafer chuck plate or the contact plate is soiled for some reason, it is appropriately replaced with a non-stained one. There is an advantage that the semiconductor device can be inspected in a wafer state under the environment.

It is a front fragmentary sectional view which shows an example of the inspection apparatus of the semiconductor device of this invention, and is a figure which shows the state in which the 1st wafer chuck plate and the 1st contact plate are hold | maintained in the 1st position. It is the top view which looked at the X-X 'cross section of FIG. 1 from the top. It is a figure which shows the relationship between a 1st wafer chuck plate and a 1st contact plate, and a 1st inductance cancellation bar. It is a front fragmentary sectional view showing an example of the inspection device of the semiconductor device of the present invention, and is a figure showing the state where the 2nd wafer chuck plate and the 2nd contact plate are held in the 2nd position. It is the top view which looked at the X-X 'cross section of FIG. 4 from the top. It is a figure which shows the relationship between a 2nd wafer chuck plate and a 2nd contact plate, and a 2nd inductance cancellation bar. It is a figure which shows the relationship of the center position of the 1st, 2nd wafer chuck plate when it exists in a 1st position and a 2nd position, and a 1st, 2nd contact plate. It is a top view of a chuck stage. It is the elements on larger scale of FIG. It is a back view of a 1st wafer chuck plate and a 1st contact plate. It is a back view of a 2nd wafer chuck plate and a 2nd contact plate. It is a figure which shows the connection relation of the various suction openings provided in the chuck | zipper stage, the suction means connected to it, the 1st and 2nd lift pin, and the control apparatus which controls those operation | movement. It is a figure which shows the state which hold | maintained the 1st wafer chuck plate and the 1st contact plate in the 1st position on a chuck | zipper stage. It is a figure which shows the state which hold | maintained the test object wafer on the 1st wafer chuck plate. It is a figure which shows the state which contacted the contact part of the probe with the wafer surface and the upper surface of the 1st contact plate, and sent the test current. It is a figure which shows the state which hold | maintained the 2nd wafer chuck plate and the 2nd contact plate in the 2nd position on a chuck | zipper stage. It is a figure which shows the state which contacted the contact part of the probe with the wafer surface and the upper surface of the 2nd contact plate, and sent the test current. It is a top view which shows the relationship between the conventional chuck | zipper stage, a wafer holding part, and a probe contact area | region. It is a top view which shows the relationship between the probe for conventional surface electrodes and the probe for back surface electrodes, and a chuck | zipper stage. It is a top view which shows a mode when a comparatively large diameter wafer is test | inspected using the conventional chuck stage. It is a top view which shows a mode when a comparatively small diameter wafer is test | inspected using the conventional chuck stage.

  Hereinafter, as an example of a semiconductor device targeted by the inspection apparatus of the present invention, the present invention will be described with reference to the drawings, using an IGBT, which is one of power semiconductor devices, as an example. Of course, the present invention is not limited to the IGBT, and the inspection apparatus of the present invention is not limited to the illustrated one.

  FIG. 1 is a front partial sectional view showing an example of a semiconductor device inspection apparatus according to the present invention, and shows a state in which a first wafer chuck plate and a first contact plate are held at respective first positions on a chuck stage. ing.

  In FIG. 1, 1 is a semiconductor device inspection apparatus according to the present invention, 2 is an outer frame thereof, 3 is a chuck stage, 4 is an insulating plate for mounting and holding the chuck stage 3 thereon, and 5 is a heat insulating plate. is there. A heater (not shown) is interposed between the insulating plate 4 and the heat insulating plate 5. 6 is an XYZ-θ stage for moving the chuck stage 3 in the XYZ and θ directions together with the insulating plate 4 and the heat insulating plate 5, 7 is a surface electrode probe, 7A is a contact portion of the surface electrode probe 7, and 8 is a back electrode. 8A is a contact portion of the back electrode probe 8, 8B is a vertical conductive portion of the back electrode probe portion 8, 9 is a control device, and 10 is a tester.

  WP1 is a first wafer chuck plate that is detachably held at a first position on the chuck stage 3, and CP1 is a first contact plate that is also detachably held at a first position on the chuck stage 3. is there. The thickness of the first wafer chuck plate WP1 is thinner than that of the first contact plate CP1, and when an inspection target wafer (to be described later) is placed and held on the first wafer chuck plate WP1, the upper surface of the wafer is the first contact. The plate CP1 is selected so as to be on the same plane as the upper surface of the plate CP1. As a result, by raising the chuck stage 3, the contact portion 7A of the front electrode probe 7 and the contact portion 8A of the back electrode probe 8 which are installed at the same height at the front end are moved from the upper surface of the wafer to the first surface. The upper surface of the contact plate CP1 can be simultaneously contacted.

  The LCB 1 is a first inductance cancellation bar disposed above the chuck stage 3 and in parallel with the upper surface of the chuck stage 3. The first inductance cancellation bar LCB1 is made of a conductive member, and has a front end connected to the contact portion 8A of the back electrode probe 8 and a rear end connected to the vertical conductive portion 8B of the back electrode probe 8. Thus, a part of the electrical connection path of the back electrode probe 8 connecting the contact portion 8A and the tester 10 is formed. In the illustrated example, the first inductance cancellation bar LCB1 is configured separately from the contact portion 8 of the back electrode probe 8, but the first inductance cancellation bar LCB1 is integrated with the contact portion 8A. What is formed or previously connected to the contact portion 8A may be prepared and connected to the vertical conductive portion 8B. The same applies to the second inductance cancel bar LCB2 described later. The same applies to the case where the first or second inductance cancellation bar forms part of the electrical connection path connecting the contact portion 7A of the surface electrode probe 7 and the tester 10.

  In the inspection apparatus 1 of this example, the first inductance cancellation bar LCB1 is connected to the contact portion 8A of the back surface electrode probe 8, and the electrical connection path of the back surface electrode probe 8 connecting the contact portion 8A and the tester 10. Is connected to the contact portion 7A of the surface electrode probe 7 to form a part of the electrical connection path of the surface electrode probe 7 connecting the contact portion 7A and the tester 10. May be. In addition to the above-described members, the inspection apparatus 1 includes a wafer cassette for storing a wafer to be inspected, a wafer transfer device, an alignment microscope, and an imaging device, which are not shown.

FIG. 2 is a plan view of the XX ′ cross section of FIG. 1 as viewed from above. For convenience, only the chuck stage 3 and the members positioned above it are shown. As shown in FIG. 2, the chuck stage 3 has a planar shape in which semicircles are connected to both ends of a rectangle. Wafer first wafer chuck plate WP1 is relatively large diameter, a wafer chuck plate that target wafer, for example, 6 inches in diameter, the planar shape of the upper surface is circular, its diameter WPD ₁ is of interest Is selected so that it can be placed and held on the top surface. Note that WPc ₁ is the center of the upper surface of the first wafer chuck plate WP1.

The first contact plate CP1 is used together with the first wafer chuck plate WP1 and makes a pair with the first wafer chuck plate WP1, and the planar shape of the upper surface thereof is circular like the first wafer chuck plate WP1. Diameter CPd ₁ of the first contact plate CP1, when checking the time, the contact portion 7A of the surface electrode probe 7 has an upper surface of the test object wafer held on the first wafer chuck plate WP1 relatively moved, for the back electrode as the contact portion 8A of the probe 8 is not Shimawa out from on the first contact plate CP1, be the same as the diameter WPD ₁ of the first wafer chuck plate WP1, it is set to be slightly larger than that. Note that CPc ₁ is the center of the upper surface of the first contact plate CP1.

Note that the planar shape of the upper surfaces of the first wafer chuck plate WP1 and the first contact plate CP1 is usually selected to be circular in accordance with the planar shape of the wafer to be inspected, which is usually circular. As long as the wafer can be held, the shape is not necessarily limited to a circle, and may be an ellipse or a polygon. However, if the planar shape of the upper surface of the first wafer chuck plate WP1 and the first contact plate CP1 is not circular, with a diameter of the largest circle that can be drawn on each of the upper surfaces, the diameter WPD ₁ and the first wafer chuck plate WP1 shall the diameter CPd ₁ of the first contact plate CP1, the center of the largest circle, it is assumed that the diameter CPc ₁ of the first center of the wafer chuck plate WP1 WPc ₁ and the first contact plate CP1. The same applies to the second wafer chuck plate and the second contact plate described later.

In FIG. 2, Pinh ₁ is a first lift pin hole that passes when the first lift pin moves up and down. The first lift pin (not shown) passes through the first lift pin hole Pinh ₁ from the position where the top portion is below the upper surface of the chuck stage 3, and the top portion is located above the upper surface of the first wafer chuck plate WP1. The first wafer chuck plate WP1 is moved up to a position, or conversely, the top portion of the first wafer chuck plate WP1 is lowered from a position above the upper surface of the first wafer chuck plate WP1 to a position below the upper surface of the chuck stage 3. The wafer placed on the top can be lifted, or the wafer can be placed on the first wafer chuck plate WP1.

  In the inspection apparatus 1 of this example, the first wafer chuck plate WP1 and the first contact plate CP1 are both made of a conductive material such as copper subjected to rust-proof plating, and the chuck stage 3 is also used. Since this is the same, as shown in FIGS. 1 and 2, the first wafer chuck plate WP1 and the first contact plate CP1 are placed at a predetermined first position with their back surfaces in contact with the upper surface of the chuck plate 3. When placed and held, the upper surface of the first wafer chuck plate WP1 and the upper surface of the first contact plate CP1 are electrically connected via the chuck stage 3.

  FIG. 3 is a diagram showing the first inductance cancel bar LCB1 shifted from the top of the chuck stage 3 in order to explain the relationship between the first wafer chuck plate WP1 and the first contact plate CP1 and the first inductance cancel bar LCB1. It is.

As shown in FIG. 3, the horizontal distance _{L 1} between the center CPc ₁ the center WPc ₁ of the first wafer chuck plate WP1 first contact plate CP1, the tip of the contact portion 7A of the surface electrode probe 7 and the back electrode equal to the horizontal distance D ₁ of the between the leading end of the contact portion 8A of use the probe 8. In other words, the length LCBd ₁ of the first inductance cancellation bar LCB1 is such that the first wafer chuck plate WP1 and the first contact plate CP1 are in the center of both when held at the first position shown on the chuck stage 3 as shown. Corresponding to the horizontal distance L ₁ between WPc ₁ and CPc ₁ , the horizontal distance D ₁ between the tip of the contact portion 7 A of the front surface electrode probe 7 and the tip of the contact portion 8 A of the back surface electrode probe 8 is It is chosen to be equal to L _1. Note that the tips of the contact portion 7A and the contact portion 8A mean protruding portions that come into contact with the surface electrode of the wafer and the upper surface of the first contact plate, respectively, during inspection.

As described above, since the length LCBd ₁ of the first inductance cancellation bar LCB1 is selected so that D ₁ = L ₁ , the contact portion 7A of the surface electrode probe 7 is the first wafer chuck plate at the time of inspection. When relatively moving within the upper surface of the wafer to be inspected held on WP1, the contact portion 8A of the back surface electrode probe 8 can also relatively move within the upper surface of the first contact plate CP1 without detachment. can, while the distance D ₁ of the the tip of the contact portion 8A of the front end of the contact portion 7A of the surface electrode probe 7 and the back electrode probe 8, always keeping the length of the shortest, the inspection of the semiconductor devices on the wafer It can be carried out.

  4 shows a state in which the second wafer chuck plate and the second contact plate are held at the second positions on the chuck stage 3, respectively. The same members as those in FIG. 1 are denoted by the same reference numerals.

  In FIG. 4, WP2 is a second wafer chuck plate that is detachably held at a second position on the chuck stage 3, and CP2 is a second wafer that is also detachably held at a second position on the chuck stage 3. It is a two-contact plate. As described for the first wafer chuck plate WP1, the second wafer chuck plate WP2 is thinner than the second contact plate CP2, and a wafer to be inspected to be described later is placed and held on the second wafer chuck plate WP2. In this case, the upper surface of the wafer is selected so as to be on the same plane as the upper surface of the second contact plate CP2. Thus, as described above, by raising the chuck stage 3, the contact portion 7A of the front electrode probe 7 and the contact portion 8A of the back electrode probe 8 that are installed at the same height position at the front end are moved to the wafer. The upper surface and the second contact plate CP2 can be simultaneously contacted.

  The LCB 2 is a second inductance cancellation bar disposed above the chuck stage 3 and in parallel with the upper surface of the chuck stage 3. Similarly to the first inductance cancellation bar LCB1, the second inductance cancellation bar LCB2 is made of a conductive member, and its front end is connected to the contact portion 8A of the back electrode probe 8 and its rear end is the back electrode. The probe 8 is connected to the vertical conductive portion 8B, and constitutes a part of the electrical connection path of the back electrode probe 8 connecting the contact portion 8A and the tester 10. The second inductance cancel bar LCB2 is connected to the contact portion 7A of the surface electrode probe 7 so as to constitute a part of the electrical connection path of the surface electrode probe 7 connecting the contact portion 7A and the tester 10. What is good is the same as described above for the first inductance cancellation bar LCB1.

FIG. 5 is a plan view of the XX ′ cross section of FIG. 4 as viewed from above. For convenience, only the chuck stage 3 and the members positioned above it are shown. As can be seen from FIG. 5, the planar shape of the upper surface of the second wafer chuck plate WP2 is the same as that of the first wafer chuck plate WP1, but the second wafer chuck plate WP2 has a relatively smaller diameter than the first wafer chuck plate WP1. of, for example, a wafer of 4 inches in diameter to a subject, the diameter WPD ₂ is smaller than the diameter WPd1 of the first wafer chuck plate WP1. Note that WPc ₂ is the center of the upper surface of the second wafer chuck plate WP2.

The second contact plate CP2 is used together with the second wafer chuck plate WP2, and makes a pair with the second wafer chuck plate WP2. The planar shape of the upper surface of the second contact plate CP2 is circular like the second wafer chuck plate WP2. Diameter CPd ₂ of the second contact plate CP2, the test time, when the contact portion 7A of the surface electrode probe 7 has an upper surface of the test object wafer held on the second wafer chuck plate WP2 relatively moved, for the back electrode as the contact portion 8A of the probe 8 is not Shimawa out from on the second contact plate CP2, be the same as the diameter WPD ₂ of the second wafer chuck plate WP2, it is set to be slightly larger than that. Incidentally, CPc ₂ is the center of the upper surface of the second contact plate CP2.

  Incidentally, the planar shape of the upper surfaces of the second wafer chuck plate WP2 and the second contact plate CP2 is usually selected to be circular in accordance with the planar shape of the wafer to be inspected, which is usually circular. As long as the wafer can be held, the shape is not necessarily limited to a circle, and may be oval or polygonal as in the first wafer chuck plate WP1 and the first contact plate CP1. .

In FIG. 5, Pinh ₂ is a second lift pin hole that passes when the second lift pin moves up and down. The second lift pin (not shown) passes through the second lift pin hole Pinh ₂ from the position where the top portion is below the upper surface of the chuck stage 3, and the top portion is located above the upper surface of the second wafer chuck plate WP2. The second wafer chuck plate WP2 is moved up to a position, or conversely, lowered from a position where the top of the second wafer chuck plate WP2 is above the upper surface of the second wafer chuck plate WP2 to a position below the upper surface of the chuck stage 3. The wafer placed on the top can be lifted, or the wafer can be placed on the second wafer chuck plate WP2.

11 ₁ suction grooves for the first wafer chuck plate PW1 provided on the upper surface of the chuck stage 3, 13 ₁ contact plate first suction port for the first contact plate CP1 opening into the upper surface of the chuck stage 3, 15 ₁ Is a positioning convex portion for the first contact plate CP1 provided on the upper surface of the chuck stage 3, which will be described later.

  Similarly to the first wafer chuck plate WP1 and the first contact plate CP1, the second wafer chuck plate WP2 and the second contact plate CP2 are both made of a conductive material such as copper subjected to rust prevention plating, As shown in FIG. 4 and FIG. 5, when the second wafer chuck plate WP2 and the second contact plate CP2 are placed and held at a predetermined second position with their back surfaces in contact with the upper surface of the chuck plate 3. The upper surface of the second wafer chuck plate WP2 and the upper surface of the second contact plate CP2 are electrically connected via the chuck stage 3.

  FIG. 6 is a diagram showing the second inductance cancellation bar LCB2 shifted from the top of the chuck stage 3 in order to explain the relationship between the second wafer chuck plate WP2 and the second contact plate CP2 and the second inductance cancellation bar LCB2. It is.

As shown in FIG. 6, the horizontal distance L ₂ between the center WPc _{2 of} the second wafer chuck plate WP ₂ and the center CPc ₂ of the second contact plate CP ₂ is the tip and back electrode of the contact portion 7 A of the surface electrode probe 7. equal to the horizontal distance D ₂ between the tip of the contact portion 8A of use the probe 8. In other words, the length LCBd ₂ of the second inductance cancellation bar LCB ₂ is set so that the center of both when the second wafer chuck plate WP ₂ and the second contact plate CP 2 are held at the second position shown on the chuck stage 3. Corresponding to the horizontal distance L ₂ between WPc ₂ and CPc ₂ , the horizontal distance D ₂ between the tip of the contact portion 7 A of the front electrode probe 7 and the tip of the contact portion 8 A of the back electrode probe 8 is It is chosen to be equal to L _2.

As described above, since the length LCBd ₂ of the second inductance cancellation bar LCB2 is selected so that D ₂ = L ₂ , the contact portion 7A of the surface electrode probe 7 is connected to the second wafer chuck plate at the time of inspection. When relatively moving within the upper surface of the wafer to be inspected held on WP2, the contact portion 8A of the back surface electrode probe 8 can also move relatively within the upper surface of the second contact plate CP2 without coming off. can, while the distance D ₂ between the tip of the contact portion 8A of the front end of the contact portion 7A of the surface electrode probe 7 and the back electrode probe 8, always keeping the length of the shortest, the inspection of the semiconductor devices on the wafer It can be carried out.

7, FIGS. 3 and 6, the center WPc ₁ and CPc ₁ of the first wafer chuck plate WP1 and the first contact plate CP1 when held in the first position, when it is held in the second position 7 is a plan view showing only the centers WPc ₂ and CPc _{2 of} the second wafer chuck plate WP2 and the second contact plate CP2 together with the chuck stage 3. FIG. In the figure, V is a line segment connecting the center WPc ₁ and the center CPc ₁ . For reference, the first and second wafer chuck plates WP1 and WP2 and the first and second contact plates CP1 and CP2 held at the first position or the second position are indicated by broken lines.

As shown in FIG. 7, the centers WPc ₂ and CPc ₂ of the second wafer chuck plate WP2 and the second contact plate CP2 when held at the second position are the first wafer chuck plate when held at the first position. The distance L ₂ between the centers WPc ₁ and CPc ₁ is on the line segment V connecting the centers WPc ₁ and CPc _{1 of the} WP 1 and the first contact plate CP ₁ , and the distance L ₂ between the centers WPc ₂ and CPc _{2 is} the distance between the centers WPc ₁ and CPc _1. L shorter than the _1.

Thus, the first and second positions, the center WPc ₂ of the second wafer chuck plate WP2 when held in the second position, the center CPc ₂ of the second contact plate CP2, in the first position is on the line segment V connecting the centers WPc ₁ of the first wafer chuck plate WP1 when held the center CPc ₁ of the first contact plate CP1, and the distance _{L 2} between the center WPc ₂ and the center CPc ₂ so as to be shorter than the distance _{L 1} between the centers WPc ₁ and the center CPc _1, its position is selected.

In this example, the center positions of the first wafer chuck plate WP1 and the second wafer chuck plate WP2 do not change between the first position and the second position, and WPc ₁ and WPc ₂ are in the same position. WPc ₂ may be located on line segment V, and may be located at a position different from WPc ₁ . In the present embodiment, in a first position and a second position, the first contact plate CP1 and the center position of the second contact plate CP2 is different, CPc ₂ differs from the CPc ₁ on line V Although the position, the first contact plate CP1 in a first position and a second position in the same center position of the second contact plate CP2, CPc ₂ may also be in the same position as CPc _1. Further, the center positions of the first wafer chuck plate WP1 and the second wafer chuck plate WP2 and the center positions of the first contact plate CP1 and the second contact plate CP2 are made different between the first position and the second position. , WPc ₂ and CPc ₂ may be located on the line segment V at positions different from WPc ₁ and CPc ₁ , respectively.

In any case, the length LCBd ₁ of the first inductance cancellation bars LCB1 corresponds to the distance _{L 1} between the center WPc ₁ of the first wafer chuck plate WP1 in the first position and the center CPc ₁ of the first contact plate CP1, length LCBd ₂ of the second inductance cancellation bars LCB2 corresponds to the distance _{L 2} between the center WPc ₂ of the second wafer chuck plate WP2 in the second position with the center CPc ₂ of the second contact plate CP2, Figure 7 As is apparent from L ₂ <L ₁ , the length LCBd ₂ of the second inductance cancellation bar LCB ₂ is shorter than the length LCBd _{1 of} the first inductance cancellation bar LCB ₁ .

That is, when the wafer to be inspected changes from a relatively large diameter (for example, 6 inch diameter) to a relatively small diameter (for example, 4 inch diameter), it is held at the first position on the chuck stage 3. Instead of the first wafer chuck plate WP1 and the first contact plate CP1, the second wafer chuck plate WP2 and the second contact plate CP2 having a smaller diameter are held at the second position, and the first inductance is also provided. By using the second inductance cancellation bar LCB2 shorter than the cancel bar LCB1, the contact portion 8A of the back surface electrode probe 8 or the contact portion 7A of the front surface electrode probe 7 and the tester 10 are electrically connected. The length of the path to be measured is D ₁ when a relatively large diameter wafer is being inspected. Therefore, it can be shortened to D ₂ when a relatively small diameter wafer is inspected. As a result, even if the diameter of the wafer to be inspected changes, the length of the electrical path connecting the contact portion and the tester 10 is always maintained at a certain shortest length, and the parasitic inductance generated in the measurement path is minimized. Thus, the semiconductor device formed on the wafer can be inspected. Needless to say, when the wafer to be inspected changes from a small-diameter wafer to a large-diameter wafer, the above operation may be reversed.

  FIG. 8 is a plan view of the chuck stage 3. For convenience, the first and second wafer chuck plates WP1 and WP2 and the first and second contact plates CP1 and CP2 at the first position or the second position are indicated by broken lines.

As shown in FIG. 8, on the upper surface of the chuck stage 3, a groove 11 for evenly distributing the suction negative pressure for sucking and holding the first wafer chuck plate WP1 to the entire circumference of the back surface of the first wafer chuck plate WP1. ₁ is provided in single, well, groove 11 ₂ to evenly distribute the suction negative pressure for attracting and holding the second wafer chuck plate WP2 a backside entire circumference of the second wafer chuck plate WP2 is provided in double It has been. 22 ₁ wafer chuck plate first suction port, 22 ₂ is a wafer chuck plate second suction port. As shown in FIG. 9 in which a part of FIG. 8 is enlarged, the wafer chuck plate first suction port 22 ₁ and the wafer chuck plate second suction port 22 ₂ are opened at the groove bottoms of the grooves 11 ₁ and 11 ₂ , respectively. A suction means (not shown) is connected to each suction port.

Grooves 11 ₁ or the grooves 11 _2, since the first wafer chuck plate WP1 or second wafer chuck plate WP2 is for holding the adsorption, of course, the first wafer chuck plate WP1 or second wafer chuck plate When the WP2 is placed at the first position or the second position, it opens into the upper surface region of the chuck stage 3 facing the back surface of the first wafer chuck plate WP1 or the second wafer chuck plate WP2, and the groove 11 _1. or grooves 11 are the same for the wafer chuck plate first suction port 22 ₁ and the wafer chuck plate second suction port 22 ₂ which opens into _2. The groove 11 ₁ or the groove 11 ₂ has a portion communicating with the outside other than the upper surface of the chuck stage 3 and the wafer chuck plate first suction port 22 ₁ or the wafer chuck plate second suction port 22 _2. It is a groove that is closed in the upper surface of the chuck stage 3.

  A wafer suction port 12 opens on the upper surface of the chuck stage 3, and a suction unit (not shown) is connected to the wafer suction port 12.

13 ₁ contact plate first suction port opening on the upper surface of the chuck stage 3, 13 _2, which is also a contact plate second suction port opening on the upper surface of the chuck stage 3. Contact plate first suction port 13 ₁ and the contact plate the second suction port 13 _2, negative for holding adsorbing first contact plate CP1 and the second contact plate CP2 to be placed in the first position or the second position, respectively As a matter of course, when the first contact plate CP1 or the second contact plate CP2 is placed at the first position or the second position, the first contact plate CP1 or the second contact plate is provided. An opening is made in the upper surface region of the chuck stage 3 facing the back surface of CP2.

Reference numeral 14 ₁ denotes a first convex portion for positioning used when the first wafer chuck plate WP1 is positioned and placed at the first position. In this example, the two convex portions 14 ₁ and 14 ₁ are chuck stages. 3 is provided on the upper surface. In this example, the two first convex portions 14 ₁ and 14 ₁ for the first wafer chuck plate WP1 are both positioned when the second wafer chuck plate WP2 is positioned and placed at the second position. It also serves as the second convex portion for positioning, and both are common. Of course, one or more of the second convex portions for the second wafer chuck plate WP2 may be provided separately from the first convex portion for the first wafer chuck plate WP1. Moreover, the number of the 1st convex part or the 2nd convex part should just be at least two, and is not restricted to two. Furthermore, it goes without saying that a concave portion may be used instead of the convex portion.

15 ₁ is a first convex portion for positioning which are used in positioning mounting the first contact plate CP1 to the first position, in this example 1 two protrusions _15, 15 ₁ chuck stage 3 Is provided on the upper surface of the. On the other hand, 15 ₂ is a second protrusion for positioning that is used in positioning placing the second contact plate CP2 in the second position, one of the two second projecting portions in this example There also serves as a first protrusion 15 _1, one of the two first protrusions 15 ₁ and the second projecting portion 15 ₂ are common. All of the second contact plate CP2 2 pieces of second protrusions for 15 ₂ may be provided separately from the first protrusion 15 ₁ for the first contact plate CP1 it is of course, the first protrusion or the Needless to say, the number of the two convex portions is not limited to two. Furthermore, it goes without saying that a concave portion may be used instead of the convex portion.

FIG. 10 is a back view of the first wafer chuck plate WP1 and the first contact plate CP1. 10, 16 _1, when the first wafer chuck plate WP1 is placed on the first position on the chuck stage 3, provided at a position opposite to the wafer suction port 12 is provided on the upper surface of the chuck stage 3 This is the negative pressure inlet. Negative pressure introducing inlet 16 _1, via a communication passage formed in the first wafer chuck plate WP1, communicates with a number of wafer suction holes open to the upper surface of the first wafer chuck plate WP1, When a negative pressure is supplied from the wafer suction port 12, the negative pressure is supplied to the wafer suction hole opened on the upper surface of the first wafer chuck plate WP1, and the wafer is sucked thereon.

18 ₁ is a groove for the distribution of suction negative pressure is provided on the rear surface of the first contact plate CP1, when the first contact plate CP1 is placed on the first position on the chuck stage 3, the at points indicated by reference numeral 13 ₁ in the center, the contact plate first suction port 13 ₁ and the counter provided on the upper surface of the chuck stage 3, it communicates. Grooves 18 _1, except the backside of the first contact plate CP1 is not in communication with the outside, a groove closed in the rear surface of the first contact plate CP1.

17 ₁ and 19 _1, the first wafer chuck plate WP1 or first contact plate CP1 is when placed in the first position, the first convex portion 14 ₁ and for positioning are provided on the upper surface of the chuck stage 3 Numerals 15 and ₁ are recessed portions for positioning.

FIG. 11 is a back view of the second wafer chuck plate WP2 and the second contact plate CP2. 11, 16 _2, provided in the second when the wafer chuck plate WP2 is placed on the second position on the chuck stage 3, a position facing the wafer suction port 12 is provided on the upper surface of the chuck stage 3 This is the negative pressure inlet. Negative pressure inlet 16 ₂ via the communication passage formed in the second wafer chuck plate WP2, communicates with a number of wafer suction holes open to the upper surface of the second wafer chuck plate WP2, When a negative pressure is supplied from the wafer suction port 12, the negative pressure is supplied to a wafer suction hole opened on the upper surface of the second wafer chuck plate WP2, and the wafer is sucked thereon.

18 ₂ is the groove for the distribution of suction negative pressure is provided on the back surface of the second contact plate CP2, when the second contact plate CP2 is placed on the second position on the chuck stage 3, the at points indicated by reference numeral 13 ₂ in the left end, the contact plate the second suction port 13 ₂ and the counter provided on the upper surface of the chuck stage 3, communicates. Groove 18 _2, except the back surface of the second contact plate CP2 is not in communication with the outside, a groove closed in the back surface of the second contact plate CP2.

17 ₂ and 19 _2, when the second wafer chuck plate WP2 or second contact plate CP2 is placed in the second position, the second protrusion 14 ₁ and for positioning are provided on the upper surface of the chuck stage 3 15 ₂ are positioning recesses which are respectively fitted to the ₂ .

  FIG. 12 is a diagram showing a connection relationship between various suction ports provided in the chuck stage 3, suction means connected to the suction ports, and first and second lift pins, and a control device 9 that controls their operation. .

In FIG. 12, 20 _{1 to} 20 ₅ are on-off valves, and 21 _{1 to} 21 ₃ are pumps that are suction means. Moreover, the broken line has shown the pipe line. Pump 21 ₁ is connected with a wafer chuck plate first suction port 22 ₁ and pipe line 11 ₁ and the communicating groove provided on the chuck stage 3, opening and closing valve 20 ₁ is in the middle of the pipe Is provided. Pump 21 ₁ a suction means is connected with a wafer chuck plate second suction port 22 ₂ both conduit communicating with the groove 11 ₂ provided on the chuck stage 3, open in the middle of the pipe valve 20 ₂ is provided. The operations of the on-off valves 20 ₁ and 20 ₂ and the pump 21 ₁ are controlled by signals from the control unit 9 a of the control device 9.

On the other hand, the pump 21 ₂ is suction means is connected with the wafer suction port 12 and the conduit is provided on the chuck stage 3, the on-off valve 20 ₃ is provided in the middle of the pipe. Operation of the opening and closing valve 20 ₃ and the pump 21 ₂ is also controlled by a signal from the control unit 9a of the control device 9.

Further, the pump 21 ₃ a suction means, via a conduit opening and closing valve 20 ₄ or open-close valve 20 ₅ is provided in the middle, the contact plate first suction port 13 ₁ and the contact which opens on the chuck stage 3 It is connected to the plate the second suction port 13 _2. Off valve 20 ₄ and 20 _5, and also the operation of the pump 21 ₃ is controlled by a signal from the control unit 9a of the control device 9.

  The control unit 9a of the control device 9 is also connected to a first lift pin drive mechanism and a second lift pin drive mechanism (not shown), and controls the vertical movement of the first lift pin and the second lift pin.

  In addition to the control unit 9a, the control device 9 includes information on the diameter of the wafer to be inspected, the correspondence between the first or second wafer chuck plate and the first or second contact plate, and the diameter of the wafer to be inspected. A storage device 9b for storing information on the relationship between the suction means and the on-off valve to be operated and / or information on the diameter of the wafer and the correspondence between the first lift pin or the second lift pins, and the XYZ-θ stage 6 Are provided with an XYZ-θ stage controller 9c and an input / output unit 9d.

  Hereinafter, the operation of the inspection apparatus according to the present invention will be described with reference to FIGS. In the following description, a wafer having a diameter of 6 inches as a relatively large diameter wafer and a wafer having a diameter of 4 inches as a relatively small diameter wafer will be described as examples. This is merely an example, and the wafers targeted by the inspection apparatus and inspection method according to the present invention are not limited to those having a diameter of 6 inches and 4 inches.

  First, when a wafer having a relatively large diameter of 6 inches is planned as the first wafer to be inspected, the human recognizes that the object wafer has a diameter of 6 inches by visual observation or other methods, and the wafer diameter Alternatively, information on the wafer size is input to the control device 9 via the input / output unit 9d. Alternatively, the next scheduled wafer size is automatically identified by an external signal or a sensor for identifying the wafer diameter, and is automatically input to the controller 9 via the input / output unit 9d. Also good.

  When the next scheduled wafer size is input, the control unit 9a of the control device 9 determines that the wafer chuck plate and contact plate currently held on the chuck stage 3 are the first wafer chuck plate WP1 and the first wafer chuck plate WP1. Whether the contact plate CP1 is, for example, based on information on whether the lift pin driven in the previous inspection is the first lift pin or the second lift pin, the wafer chuck plate and the contact plate, and It is determined whether or not the inductance cancel bar needs to be replaced. This determination may be made by visually identifying the type of wafer chuck plate and contact plate that are actually held on the chuck stage 3 by humans, or automatically using a displacement sensor or image processing. May be identified.

If it is determined that the replacement is necessary, the first wafer chuck plate WP1 and the first contact plate CP1 corresponding to the 6-inch diameter wafer are placed at the first position. This placement is, it is a matter of course carried out with the first protrusion 14 _1, 15 ₁ for positioning the aforementioned.

When the placement of the first wafer chuck plate WP1 and the first contact plate CP1 at the first position is completed, the control unit 9a of the control device 9 automatically or waits for an external command to store the storage device 9b. based on the correspondence between the suction means information about the diameter of a wafer to be inspected, which is stored as to be operated and the on-off valve, with issues an operation command to the pump 21 ₁ shown in FIG. 12, the on-off valve 20 ₂ closed in, and the open close valve 20 ₁ in the open, the groove 11 ₁ formed on the chuck stage 3 is sucked into the negative pressure via a wafer chuck plate first suction port 22 _1, a first wafer in a first position The chuck plate WP1 is sucked and held.

The control unit 9a of the control device 9 automatically or waits for a command from the outside, and information on the diameter of the wafer to be inspected stored in the storage device 9b and the suction means and on-off valve to be operated. based on the correspondence between the negative pressure with issues an operation command to the pump 21 ₃ shown in FIG. 12, the on-off valve 20 ₅ closed, and the opening and closing valve 20 ₄ is opened, the contact plate first suction port 13 ₁ The first contact plate CP1 is sucked and held at the first position on the chuck stage 3.

Thus, with respect to the first wafer chuck plate WP1, the pump 21 _{1 as} the suction means, the on-off valve 20 ₁ , the wafer chuck plate first suction port 22 ₁ , and the groove 11 ₁ formed on the chuck stage 3 are provided. and, with respect to the first contact plate CP1, pump 21 _3, the on-off valve 20 _4, and the contact plate first suction port 13 _1, and constitutes a plate holding first means for detachably held in the first position, respectively Will be.

  At the same time, the first inductance cancel bar LCB1 corresponding to a 6-inch diameter wafer is connected between the contact portion 8A and the vertical conductive portion 8B of the back electrode probe 8 manually or automatically. Note that a contact portion 8A of the back electrode probe 8 and the first inductance cancel bar LCB1 formed integrally or a pre-connected one are prepared and connected to the vertical conductive portion 8B. You may do it.

  In FIG. 13, as described above, the first wafer chuck plate WP1 and the first contact plate CP1 are attracted and held at the first position on the chuck stage 3, and are perpendicular to the contact portion 8A of the back electrode probe 8. The state where the 1st inductance cancellation bar LCB1 was connected between the electroconductive parts 8B is represented.

  When the holding of the first wafer chuck plate WP1 and the first contact plate CP1 in the first position and the connection of the first inductance cancel bar LCB1 are finished, the control unit 9a of the control device 9 is stored in the storage device 9b. The first lift pin is raised above the upper surface of the first wafer chuck plate based on the correspondence between the wafer diameter information and the first lift pin or the second lift pin. Next, the wafer transfer device is operated to transfer the wafer W to be inspected onto the first wafer chuck plate WP1 and place it on the first lift pins. When the wafer W is placed on the first lift pins, the control unit 9a of the control device 9 lowers the first lift pins and places the wafer W on the first wafer chuck plate WP1.

Subsequently, the control unit 9a of the control unit 9 actuates the pump 21 ₂ is suction means, negatively by the opening and closing valve 20 ₃ is opened, the wafer suction port 12 with suction negative pressure, and facing the through the pressure inlet 16 _1, open in the upper surface of the first wafer chuck plate WP1 multiple wafer suction holes and suction are, the wafer W suction, holds on the first wafer chuck plate WP1. FIG. 14 shows a state in which the wafer W is sucked and held on the first wafer chuck plate WP1 in this way.

  Next, the control unit 9a of the control device 9 issues a command to the XYZ-θ stage control unit 9c, operates the XYZ-θ stage 6, raises the chuck stage 3, and as shown in FIG. The contact portion 7A of the probe 7 is brought into contact with the front surface electrode of the wafer W, and the contact portion 8A of the back surface electrode probe 8 is brought into contact with the upper surface of the first contact plate CP1. In this state, an electrical signal necessary for the inspection is supplied from the tester 10 to the semiconductor device on the wafer W through the contact portion 7A of the surface electrode probe 7, and the inspection is performed.

  FIG. 15 shows a state in which the semiconductor device on the wafer W is inspected in this way. When the inspection current flows in the chuck stage 3 in the direction indicated by the white arrow in the drawing, it passes through the contact portion 8A and flows in the first inductance cancellation bar LCB1 in the direction indicated by the black arrow in the drawing. Since the inductance cancellation bar LCB1 is arranged in parallel with the upper surface of the chuck stage 3, the magnetic field generated by the current flowing in the chuck stage 3 and the magnetic field generated by the current flowing in the first inductance cancellation bar LCB1 are , The directions are reversed and cancel each other. Therefore, the effective inductance in the current path between the contact portion 7A and the contact portion 8A can be reduced, and measurement with better transient characteristics and higher accuracy is possible.

  Even when the planned diameter of the wafer to be inspected W changes from 6 inches to 4 inches, the same operation as described above may be performed. That is, when the next planned diameter of the inspection target wafer W is recognized and it is determined that the wafer chuck plate or the contact plate needs to be replaced, the first wafer chuck plate WP1 corresponding to the 6-inch diameter wafer. In place of the first contact plate CP1, a second wafer chuck plate WP2 and a second contact plate CP2 corresponding to a 4-inch diameter wafer are placed at the second position.

When the placement of the second wafer chuck plate WP2 and the second contact plate CP2 at the second position is completed, the control unit 9a of the control device 9 automatically or waits for an external command to store the storage device 9b. based on the correspondence between the suction means information about the diameter of a wafer to be inspected, which is stored as to be operated and the on-off valve, with issues an operation command to the pump 21 ₁ shown in FIG. 12, the opening and closing valve 20 ₁ closed in, and the on-off valve 20 ₂ is opened, the groove 11 ₂ formed on the chuck stage 3 is sucked into the negative pressure via a wafer chuck plate second suction port 22 _2, the second wafer chuck to a second position The plate WP2 is sucked and held.

The control unit 9a of the control device 9 automatically or waits for a command from the outside, and information on the diameter of the wafer to be inspected stored in the storage device 9b and the suction means and on-off valve to be operated. based on the correspondence between the negative pressure with issues an operation command to the pump 21 ₃ shown in FIG. 12, the on-off valve 20 ₄ closed, and the opening and closing valve 20 ₅ is opened, the contact plate second suction port 13 ₂ The second contact plate CP2 is sucked and held at the second position on the chuck stage 3.

Thus, with respect to the second wafer chuck plate WP2, pump 21 ₁ is suction means, opening and closing valve 20 _2, the wafer chuck plate second suction port 22 _2, and the groove 11 ₂ formed on the chuck stage 3 and, with respect to the second contact plate CP2, pump 21 _3, the on-off valve 20 _5, and the contact plate first suction port 13 _2, constitute a plate holding second means for removably holding the second position, respectively Will be.

  At the same time, the second inductance cancel bar LCB2 corresponding to a 4-inch diameter wafer is connected between the contact portion 8A and the vertical conductive portion 8B of the back electrode probe 8 manually or automatically.

  In FIG. 16, as described above, the second wafer chuck plate WP2 and the second contact plate CP2 are attracted and held at the second position on the chuck stage 3, and are perpendicular to the contact portion 8A of the back electrode probe 8. A state in which the second inductance cancel bar LCB2 is connected to the conductive portion 8B is shown.

  Next, the control unit 9a of the control device 9 assigns the second lift pin to the second wafer chuck plate based on the correspondence between the information about the diameter of the wafer stored in the storage device 9b and the first lift pin or the second lift pin. Raise to above the upper surface. Subsequently, the wafer transfer device is operated to transfer the 4-inch wafer W to be inspected onto the second wafer chuck plate WP2 and place it on the second lift pins. When the wafer W is placed on the second lift pin, the control unit 9a of the control device 9 lowers the second lift pin and places the wafer W on the second wafer chuck plate WP2.

Subsequently, the control unit 9a of the control unit 9 actuates the pump 21 ₂ is suction means, negatively by the opening and closing valve 20 ₃ is opened, the wafer suction port 12 with suction negative pressure, and facing the through the pressure inlet 16 ₂ and opened to the upper surface of the second wafer chuck plate WP2 a large number of wafers suction holes and suction are, the wafer W suction to hold on the second wafer chuck plate WP2.

  Next, the control unit 9a of the control device 9 issues a command to the XYZ-θ stage control unit 9c, operates the XYZ-θ stage 6, raises the chuck stage 3, and as shown in FIG. The contact portion 7A of the probe 7 is brought into contact with the front surface electrode of the wafer W, and the contact portion 8A of the back surface electrode probe 8 is brought into contact with the upper surface of the second contact plate CP2. In this state, an electrical signal necessary for the inspection is supplied from the tester 10 to the semiconductor device on the wafer W through the contact portion 7A of the surface electrode probe 7, and the inspection is performed.

  Even in this case, as shown in FIG. 17, when the inspection current flows through the chuck stage 3 in the direction indicated by the white arrow in the drawing, it passes through the contact portion 8A and the inside of the second inductance cancellation bar LCB2 in the drawing. Although it flows in the direction indicated by the black arrow, since the second inductance cancellation bar LCB2 is arranged in parallel with the upper surface of the chuck stage 3, the magnetic field generated by the current flowing in the chuck stage 3 and the second inductance cancellation bar LCB2 The direction of the magnetic field generated by the current flowing therethrough is reversed and cancels each other. Therefore, the effective inductance in the current path between the contact portion 7A and the contact portion 8A can be reduced, and measurement with better transient characteristics and higher accuracy is possible.

  In the above description, the large-diameter first wafer chuck plate WP1, the first contact plate CP1, the first inductance cancel bar LCB1, and the small-diameter second wafer are selected according to the size of the wafer W to be inspected. Although the inspection apparatus and inspection method including the two sets of the chuck plate WP2, the second contact plate CP2, and the second inductance cancellation bar LCB2 have been described, the inspection apparatus and inspection method according to the present invention further includes a wafer W to be inspected. Depending on the diameter, third and fourth wafer chuck plates, contact plates, and inductance cancellation bars may be provided, and these are also included.

  In the above description, the center position of the wafer chuck plate does not change between the first position and the second position, and only the contact plate changes the center position. However, the contact is changed between the first position and the second position. With respect to the plate, the center position does not change, and only the wafer chuck plate may change the center position. Further, both the wafer chuck plate and the contact plate have the center position at the first position and the second position. You may make it change.

Further, in the above description, the grooves 11 _{1 and} 11 ₂ are formed on the upper surface of the chuck stage 3 and no grooves are formed on the lower surfaces of the first and second wafer chuck plates WP 1 and WP 2. The grooves may be formed on the lower surfaces of the first and second wafer chuck plates WP1 and WP2 without forming the grooves on the upper surface. It is to be noted that the first, the second chuck plate WP1, WP2, since the communication passage connecting the negative pressure introducing inlet 16 ₁ or 16 ₂ and a plurality of wafer suction holes are formed therein, if anything, the First, the grooves 11 _1, 11 ₂ are formed on the upper surface of the chuck stage 3 rather than the grooves on the lower surface of the second wafer chuck plates WP 1, WP 2. This is preferable because the structure does not have to be complicated.

In the above description, the three convex portions 15 ₁ , 15 ₁ , 15 ₂ are arranged as the convex portions for positioning for positioning and placing the first contact plate CP 1 and the second contact plate CP 2 on the chuck stage 3. among Although the share the central ones, the leftmost may be (leftmost wafer chuck plate side in FIG. 8) share the positioning projections 15 _2. That is, the first contact plate CP1 is positioned by positioning protrusions located at the left and right ends of the three arranged, and the second contact plate CP2 is at the center and the left side (the left side in FIG. 8 is the wafer chuck plate side). You may fix with the convex part for positioning. In this case, when the first contact plate CP1 is attached, the central positioning convex portion comes below the first contact plate CP1 to prevent contact between the lower surface of the first contact plate CP1 and the upper surface of the chuck stage 3. However, in order to avoid this, for example, an escape hole having an inner diameter larger than the outer diameter of the central positioning convex portion may be formed in a corresponding portion of the lower surface of the first contact plate CP1.

  As described above, according to the semiconductor device inspection apparatus and the inspection method using the same according to the present invention, in an inspection performed in a wafer state on a semiconductor device having electrodes on both front and back surfaces of a wafer such as a power semiconductor device. Even when the size of the wafer to be inspected changes, the length of the electrical connection path between the tester and the front surface electrode probe and the back surface electrode probe is always kept at a certain shortest length, Since the parasitic inductance generated in the measurement path can be minimized and highly accurate measurement can be performed, its industrial applicability is great.

DESCRIPTION OF SYMBOLS 1 Inspection apparatus 2 Outer frame 3 Chuck stage 4 Insulation board 5 Insulation board 6 XYZ-theta stage 7 Probe for surface electrode 8 Probe for back electrode 9 Control apparatus 10 Tester W Wafer WP1, WP2 First, second wafer chuck plate CP1, CP2 First and second contact plates LCB1, LCB2 First and second inductance cancel bars

Claims (10)

A front electrode probe and a back electrode probe, a chuck stage movable relative to both probes, and a tester electrically connected to both probes;
(1) The chuck stage is
(1-1) The first wafer chuck plate on which the wafer to be inspected is held on the upper surface, and the first contact plate on which the back electrode probe contacts the upper surface are overlapped on the chuck stage. A plate holding first means for detachably holding the first position,
(1-2) A second wafer chuck plate having a smaller diameter than the first wafer chuck plate and a second contact plate having a smaller diameter than the first contact plate are arranged on the chuck stage so that the plates do not overlap. In two positions, it has plate holding second means for holding it detachably,
(1-3) WPc ₁ and CPc ₁ are the centers of the top surfaces of the first wafer chuck plate and the first contact plate, respectively, when the first position and the second position are held at the first position. When the centers of the upper surfaces of the second wafer chuck plate and the second contact plate when held at the second position are WPc ₂ and CPc ₂ , respectively, WPc ₂ and CPc ₂ are WPc ₁ and CPc ₁ . The distance between WPc ₂ and CPc ₂ is selected to be shorter than the distance between WPc ₁ and CPc ₁ ,
(2) The surface electrode probe has a contact portion that comes into contact with the surface electrode of the wafer to be inspected held on the first or second wafer chuck plate,
(3) The back electrode probe has a contact portion that contacts the upper surface of the first or second contact plate,
(4) When held at the first position or the second position, the upper surface of the first or second wafer chuck plate and the upper surface of the first or second contact plate are electrically connected to each other. And
(5) The contact portion of the front surface electrode probe or the back surface electrode is disposed in parallel with the upper surface of the chuck stage along a straight line connecting the contact portion of the front surface electrode probe and the contact portion of the back surface electrode probe. A conductive bar constituting a part of an electrical connection path between the contact portion of the probe for the tester and the tester, the first inductance canceling bar having a length corresponding to the distance between the WPc ₁ and the CPc ₁ the WPc ₂ and CPc has a length corresponding to the distance between the _two, and a shorter second inductance canceling bar than the first inductance cancellation bars,
Inspection device for semiconductor devices.   The plate holding first means faces the back surface of the first wafer chuck plate or the first contact plate when the first wafer chuck plate or the first contact plate is placed at the first position. A wafer chuck plate first suction port or contact plate first suction port that opens into an upper surface region of the chuck stage; and a suction means connected to the wafer chuck plate first suction port or the contact plate first suction port. The semiconductor device inspection apparatus according to claim 1.   The plate holding second means faces the back surface of the second wafer chuck plate or the second contact plate when the second wafer chuck plate or the second contact plate is placed at the second position. A wafer chuck plate second suction port or contact plate second suction port that opens into an upper surface region of the chuck stage; and a suction means connected to the wafer chuck plate second suction port or the contact plate second suction port. The semiconductor device inspection apparatus according to claim 1 or 2.   The chuck stage has at least two first convex portions or first concave portions for positioning the first wafer chuck plate at the first position on the upper surface thereof, and the second wafer chuck plate at the second position. At least two second convex portions or second concave portions for positioning, and zero or one or more of the first convex portions or the first concave portions are common to the second convex portions or the second concave portions. The semiconductor device inspection apparatus according to claim 1.   The chuck stage has at least two first convex portions or first concave portions for positioning the first contact plate at the first position on the upper surface thereof, and positions the second contact plate at the second position. At least two second convex portions or second concave portions, and zero or one or more of the first convex portions or the first concave portions are in common with the second convex portions or the second concave portions. The semiconductor device inspection apparatus according to claim 1.   When the first wafer chuck plate or the second wafer chuck plate is placed at the first position or the second position on the upper surface of the chuck stage, the first wafer chuck plate or the second wafer chuck 6. A wafer suction port opened at a position opposite to a wafer suction negative pressure introduction port opened on the back surface of the plate, and a suction means connected to the wafer suction port. The inspection apparatus of the semiconductor device as described.   A first lift pin for moving the inspection target wafer up and down in contact with a back surface of the inspection target wafer existing on the first wafer chuck plate held at the first position; 7. A second lift pin for moving the inspection target wafer up and down in contact with the back surface of the inspection target wafer existing on the second wafer chuck plate held on the substrate. The inspection apparatus of the semiconductor device as described.   And a control device, the control device comprising: means for accepting input of information relating to the diameter of the wafer to be inspected; information relating to the diameter of the wafer; and the plate holding first means or the plate holding second means. Based on the correspondence relationship and / or the storage device that stores the information on the wafer diameter and the correspondence relationship between the first lift pins or the second lift pins, the information on the received wafer diameter, and the stored correspondence relationship. And / or a means for selectively activating either the first plate holding means or the second plate holding means and / or the first lift pin or the second lift pin. The inspection device for a semiconductor device according to any one of 1 to 7. A semiconductor device inspection method performed using the semiconductor device inspection apparatus according to claim 1,
The step of recognizing the diameter of the wafer to be inspected next,
Determining whether or not the wafer chuck plate and the contact plate and the inductance cancel bar need to be replaced based on the recognized diameter of the wafer;
When it is determined that the replacement is necessary, the first wafer chuck plate and the first contact plate, or the second wafer chuck plate and the second contact plate are moved to the first position on the chuck stage or based on the recognized wafer diameter. Placing in the second position;
Activating either the plate holding first means or the plate holding second means based on the recognized wafer diameter;
When it is determined that replacement is necessary, based on the recognized diameter of the wafer, either the first inductance cancellation bar or the second inductance cancellation bar is replaced with the contact portion of the front surface electrode probe or the back surface electrode probe. Connecting in the electrical connection path between the tester and the tester,
A method for inspecting a semiconductor device including:   The semiconductor device inspection method according to claim 9, further comprising a step of operating either the first lift pin or the second lift pin based on the recognized diameter of the wafer.

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