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JP2019149465A - Circuit module - Google Patents

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JP2019149465A
JP2019149465A JP2018033424A JP2018033424A JP2019149465A JP 2019149465 A JP2019149465 A JP 2019149465A JP 2018033424 A JP2018033424 A JP 2018033424A JP 2018033424 A JP2018033424 A JP 2018033424A JP 2019149465 A JP2019149465 A JP 2019149465A
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wiring
electronic component
wiring structure
layer
insulating resin
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修一 滝澤
Shuichi Takizawa
修一 滝澤
賢一 川畑
Kenichi Kawabata
賢一 川畑
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TDK Corp
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TDK Corp
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Abstract

【課題】絶縁樹脂層と、電子部品及び配線構造体との密着性が高い回路モジュールを提供する。【解決手段】回路モジュール2は、上面に、複数の配線層14、及び、配線層14以外の非配線部S1を有する配線構造体と、配線構造体4の上面に配置され、配線構造体4と対向する面に、複数の端子部18、及び、端子部18以外の非端子部S2bを有する電子部品6bと、電子部品6bの端子部18と配線構造体4の配線層14とをそれぞれ接続する複数の接続部22と、配線構造体4の上面に設けられて電子部品6b及び接続部22を埋め込み、電子部品6bの非端子部S2bと配線構造体4の非配線部S1との間に位置する隙間封止部Pを有する絶縁樹脂層8と、電子部品6bの非端子部S2bと絶縁樹脂層8の隙間封止部Pとの間に設けられた第1密着層42と、配線構造体4の非配線部S1と絶縁樹脂層8の隙間封止部Pとの間に設けられた第2密着層44と、を備える。【選択図】図2PROBLEM TO BE SOLVED: To provide a circuit module having high adhesion between an insulating resin layer and an electronic component and a wiring structure. A circuit module 2 is arranged on an upper surface of a wiring structure 4 and a wiring structure having a plurality of wiring layers 14 and a non-wiring portion S1 other than the wiring layer 14 on the upper surface thereof. An electronic component 6b having a plurality of terminal portions 18 and a non-terminal portion S2b other than the terminal portion 18 and the terminal portion 18 of the electronic component 6b and the wiring layer 14 of the wiring structure 4 are connected to each other on the surface facing the terminal portion 18. A plurality of connecting portions 22 and an electronic component 6b and a connecting portion 22 provided on the upper surface of the wiring structure 4 are embedded between the non-terminal portion S2b of the electronic component 6b and the non-wiring portion S1 of the wiring structure 4. An insulating resin layer 8 having a gap sealing portion P located, a first contact layer 42 provided between the non-terminal portion S2b of the electronic component 6b and the gap sealing portion P of the insulating resin layer 8, and a wiring structure. A second close contact layer 44 provided between the non-wiring portion S1 of the body 4 and the gap sealing portion P of the insulating resin layer 8 is provided. [Selection diagram] Fig. 2

Description

本発明は、回路モジュールに関する。   The present invention relates to a circuit module.

配線構造体と、配線構造体の上面に配置された電子部品と、電子部品を埋め込む絶縁樹脂層とを備える回路モジュールが知られている。   There is known a circuit module including a wiring structure, an electronic component arranged on the upper surface of the wiring structure, and an insulating resin layer in which the electronic component is embedded.

特開2010−114291号公報JP 2010-114291 A

しかしながら、従来の回路モジュールでは、絶縁樹脂層と、電子部品及び配線構造体との密着性が十分ではない。   However, in the conventional circuit module, the adhesiveness between the insulating resin layer, the electronic component, and the wiring structure is not sufficient.

本発明は、上記従来技術の有する課題に鑑みてなされたものであり、絶縁樹脂層と、電子部品及び配線構造体との密着性が高い回路モジュールを提供することを目的とする。   The present invention has been made in view of the above-described problems of the prior art, and an object thereof is to provide a circuit module having high adhesion between an insulating resin layer, an electronic component, and a wiring structure.

本発明の一側面に係る回路モジュールは、上面に、複数の配線層、及び、配線層以外の非配線部を有する配線構造体と、配線構造体の上面に配置され、配線構造体と対向する面に、複数の端子部、及び、端子部以外の非端子部を有する電子部品と、電子部品の端子部と配線構造体の配線層とをそれぞれ接続する複数の接続部と、配線構造体の上面に設けられて電子部品及び接続部を埋め込み、電子部品の非端子部と配線構造体の非配線部との間に位置する隙間封止部を有する絶縁樹脂層と、電子部品の非端子部と絶縁樹脂層の隙間封止部との間に設けられた第1密着層と、配線構造体の非配線部と絶縁樹脂層の隙間封止部との間に設けられた第2密着層と、を備える。   A circuit module according to one aspect of the present invention is arranged on a top surface of a wiring structure having a plurality of wiring layers and a non-wiring portion other than the wiring layer, and is opposed to the wiring structure. An electronic component having a plurality of terminal portions and a non-terminal portion other than the terminal portion on the surface, a plurality of connection portions for connecting the terminal portion of the electronic component and the wiring layer of the wiring structure, and a wiring structure An insulating resin layer provided on the upper surface to embed an electronic component and a connection portion and having a gap sealing portion located between the non-terminal portion of the electronic component and the non-wiring portion of the wiring structure, and the non-terminal portion of the electronic component A first adhesion layer provided between the gap sealing portion of the insulating resin layer and a second adhesion layer provided between the non-wiring portion of the wiring structure and the gap sealing portion of the insulating resin layer; .

上記回路モジュールでは、電子部品と絶縁樹脂層の隙間封止部との間に第1密着層が設けられ、配線構造体と絶縁樹脂層の隙間封止部との間に第2密着層が設けられている。したがって、絶縁樹脂層と、電子部品及び配線構造体との密着性が高い。   In the circuit module, the first adhesion layer is provided between the electronic component and the gap sealing portion of the insulating resin layer, and the second adhesion layer is provided between the wiring structure and the gap sealing portion of the insulating resin layer. It has been. Therefore, the adhesiveness between the insulating resin layer, the electronic component, and the wiring structure is high.

本発明の一側面に係る回路モジュールでは、第1密着層及び第2密着層が、シランカップリング剤の反応物を含んでよい。かかる態様によれば、絶縁樹脂層と、電子部品及び配線構造体との密着性が更に向上し易い。   In the circuit module according to one aspect of the present invention, the first adhesion layer and the second adhesion layer may contain a reaction product of a silane coupling agent. According to this aspect, the adhesion between the insulating resin layer, the electronic component, and the wiring structure can be further improved.

本発明の一側面に係る回路モジュールでは、上記シランカップリング剤がアミノ基を含んでよい。かかる態様によれば、絶縁樹脂層と、電子部品及び配線構造体との密着性が更に向上し易い。   In the circuit module according to one aspect of the present invention, the silane coupling agent may include an amino group. According to this aspect, the adhesion between the insulating resin layer, the electronic component, and the wiring structure can be further improved.

本発明の一側面に係る回路モジュールでは、電子部品の非端子部と配線構造体の非配線部との間隔が、10〜100μmであってよい。かかる態様によれば、絶縁樹脂層と、電子部品及び配線構造体との密着性が更に向上し易い。   In the circuit module according to one aspect of the present invention, the interval between the non-terminal portion of the electronic component and the non-wiring portion of the wiring structure may be 10 to 100 μm. According to this aspect, the adhesion between the insulating resin layer, the electronic component, and the wiring structure can be further improved.

本発明の一側面に係る回路モジュールは、電子部品を複数備えてよく、少なくとも1つの電子部品の非端子部と配線構造体の非配線部との間隔と、別の少なくとも1つの電子部品の非端子部と配線構造体の非配線部との間隔とが互いに異なってよい。かかる態様によれば、絶縁樹脂層と、電子部品及び配線構造体との密着性が更に向上し易い。   The circuit module according to one aspect of the present invention may include a plurality of electronic components, and the interval between the non-terminal portion of at least one electronic component and the non-wiring portion of the wiring structure, and the non-connection of at least one other electronic component. The distance between the terminal portion and the non-wiring portion of the wiring structure may be different from each other. According to this aspect, the adhesion between the insulating resin layer, the electronic component, and the wiring structure can be further improved.

本発明によれば、絶縁樹脂層と、電子部品及び配線構造体との密着性が高い回路モジュールが提供される。   ADVANTAGE OF THE INVENTION According to this invention, the circuit module with high adhesiveness of an insulating resin layer, an electronic component, and a wiring structure is provided.

図1は、本発明の一実施形態に係る回路モジュールの断面図である。FIG. 1 is a cross-sectional view of a circuit module according to an embodiment of the present invention. 図2は、図1に示される回路モジュールの断面の一部IIの拡大図である。FIG. 2 is an enlarged view of a part II of the cross section of the circuit module shown in FIG. 図3は、本発明の一実施形態に係る回路モジュールの断面図である。FIG. 3 is a cross-sectional view of a circuit module according to an embodiment of the present invention. 図4は、図3に示される回路モジュールの断面の一部IVの拡大図である。FIG. 4 is an enlarged view of a part IV of a cross section of the circuit module shown in FIG.

以下、本発明の好適な実施形態を詳細に説明する。図面において、同一又は同等の要素には同一の符号を付す。本明細書に記載される数値範囲の上限値及び下限値は、任意に組み合わせることができる。   Hereinafter, preferred embodiments of the present invention will be described in detail. In the drawings, the same or equivalent elements are denoted by the same reference numerals. The upper limit value and the lower limit value of the numerical ranges described in this specification can be arbitrarily combined.

図1及び2を参照して、本実施形態に係る回路モジュール2を説明する。回路モジュール2は、配線構造体4と、電子部品6a,6bと、接続部20,22と、絶縁樹脂層8と、第1密着層42と、第2密着層44と、金属層10と、を備える。   A circuit module 2 according to this embodiment will be described with reference to FIGS. The circuit module 2 includes the wiring structure 4, the electronic components 6a and 6b, the connection portions 20 and 22, the insulating resin layer 8, the first adhesion layer 42, the second adhesion layer 44, the metal layer 10, Is provided.

配線構造体4は、絶縁層24と、絶縁層24の上面に設けられた複数の配線層12,14とを有する。配線構造体4の上面は、複数の配線層12,14と、配線層12,14以外の非配線部S1(絶縁層24の上面)とに分けられる。絶縁層24の材料は、例えば、樹脂、セラミック、樹脂含浸ガラス繊維等であってよい。樹脂は、エポキシ樹脂等であってよい。セラミックは、アルミナ等であってよい。セラミックは、LTCC(Low Temperature Co−fired Ceramics)、HTCC(High Temperature Co−fired Ceramics)等であってよい。樹脂含浸ガラス繊維は、CCL(Copper Clad Laminate)等であってよい。配線層12,14の材料は、例えば、銅(Cu)、ニッケル(Ni)等であってよい。図示は省力するが、絶縁層24、配線層12,14の少なくとも一部の表面上にソルダーレジストなど、絶縁層24と異なる絶縁層が形成されていてもよい。   The wiring structure 4 includes an insulating layer 24 and a plurality of wiring layers 12 and 14 provided on the upper surface of the insulating layer 24. The upper surface of the wiring structure 4 is divided into a plurality of wiring layers 12 and 14 and a non-wiring portion S1 other than the wiring layers 12 and 14 (upper surface of the insulating layer 24). The material of the insulating layer 24 may be, for example, resin, ceramic, resin-impregnated glass fiber, or the like. The resin may be an epoxy resin or the like. The ceramic may be alumina or the like. The ceramic may be LTCC (Low Temperature Co-fired Ceramics), HTCC (High Temperature Co-fired Ceramics), or the like. The resin-impregnated glass fiber may be CCL (Copper Clad Laminate) or the like. The material of the wiring layers 12 and 14 may be copper (Cu), nickel (Ni), or the like, for example. Although illustration is saved, an insulating layer different from the insulating layer 24 such as a solder resist may be formed on at least a part of the surfaces of the insulating layer 24 and the wiring layers 12 and 14.

電子部品6aは、配線構造体4の上面に配置されている。電子部品6aは、本体部36、及び、本体部36の裏面に設けられた複数の端子部37を備える。図示は省略するが、本体部36には、各端子部37に電気的に接続された電気回路が設けられている。   The electronic component 6 a is disposed on the upper surface of the wiring structure 4. The electronic component 6 a includes a main body portion 36 and a plurality of terminal portions 37 provided on the back surface of the main body portion 36. Although not shown, the main body portion 36 is provided with an electric circuit electrically connected to each terminal portion 37.

電子部品6bは、配線構造体4の上面に配置されている。電子部品6bは、本体部16、及び、本体部16の両側端部にそれぞれ設けられた一対以上の端子部18を備える。図示は省略するが、本体部16には、各端子部18に電気的に接続された電気回路が設けられている。   The electronic component 6 b is disposed on the upper surface of the wiring structure 4. The electronic component 6 b includes a main body portion 16 and a pair of terminal portions 18 provided at both end portions of the main body portion 16. Although not shown, the main body portion 16 is provided with an electric circuit electrically connected to each terminal portion 18.

電子部品6a,6bは、例えば、コンデンサ、インダクタ、抵抗体、半導体、SAW(Surface Acoustic Wave)フィルタ等であってよい。コンデンサは、積層セラミックコンデンサ(MLCC:Multi−Layer Ceramic Capacitor)等であってよい。インダクタは、樹脂系、アルミナ系、フェライト系、金属系等の材料で構成されていてよい。電子部品6a,6bは、集積回路(IC)であってもよい。   The electronic components 6a and 6b may be capacitors, inductors, resistors, semiconductors, SAW (Surface Acoustic Wave) filters, and the like, for example. The capacitor may be a multi-layer ceramic capacitor (MLCC) or the like. The inductor may be made of a material such as resin, alumina, ferrite, or metal. The electronic components 6a and 6b may be integrated circuits (IC).

電子部品6aの配線構造体4と対向する面は、複数の端子部37と、端子部37以外の非端子部S2aとに分けられる。電子部品6bの配線構造体4と対向する面は、一対以上の端子部18と、端子部18以外の非端子部S2bとに分けられる。   The surface of the electronic component 6 a that faces the wiring structure 4 is divided into a plurality of terminal portions 37 and a non-terminal portion S 2 a other than the terminal portions 37. The surface of the electronic component 6 b that faces the wiring structure 4 is divided into a pair of terminal portions 18 and a non-terminal portion S 2 b other than the terminal portions 18.

各電子部品の非端子部と配線構造体4の非配線部S1との間隔Dは、例えば、10〜100μmであってよい。間隔Dが上記範囲内である場合、絶縁樹脂層8と、電子部品及び配線構造体4との密着性が更に向上し易い。   The distance D between the non-terminal portion of each electronic component and the non-wiring portion S1 of the wiring structure 4 may be, for example, 10 to 100 μm. When the distance D is within the above range, the adhesion between the insulating resin layer 8 and the electronic component and the wiring structure 4 can be further improved.

電子部品6aの非端子部S2aと配線構造体4の非配線部S1との間隔と、別の電子部品6bの非端子部S2bと配線構造体4の非配線部S1との間隔とは互いに異なってよい。この場合、絶縁樹脂層8と、電子部品6b及び配線構造体4との密着性が更に向上し易い。   The interval between the non-terminal portion S2a of the electronic component 6a and the non-wiring portion S1 of the wiring structure 4 is different from the interval between the non-terminal portion S2b of another electronic component 6b and the non-wiring portion S1 of the wiring structure 4. It's okay. In this case, the adhesiveness between the insulating resin layer 8, the electronic component 6b, and the wiring structure 4 can be further improved.

各接続部20は、電子部品6aの各端子部37と配線構造体4の各配線層12とを電気的に接続する。本実施形態において、接続部20は、電子部品6aの端子部37に設けられたハンダバンプのリフローにより形成することができる。各接続部22は、電子部品6bの各端子部18と配線構造体4の各配線層14とを電気的に接続する。接続部22は、電子部品6bの端子部18上に設けられた印刷ハンダのリフローにより形成できる。   Each connection part 20 electrically connects each terminal part 37 of the electronic component 6 a and each wiring layer 12 of the wiring structure 4. In the present embodiment, the connection portion 20 can be formed by reflow of solder bumps provided on the terminal portion 37 of the electronic component 6a. Each connection part 22 electrically connects each terminal part 18 of the electronic component 6 b and each wiring layer 14 of the wiring structure 4. The connection part 22 can be formed by reflow of printing solder provided on the terminal part 18 of the electronic component 6b.

絶縁樹脂層8は、配線構造体4の上面に設けられている。絶縁樹脂層8は、電子部品6a,6bを埋め込んでいる。絶縁樹脂層8は、樹脂を含む層である。樹脂は、例えば、エポキシ樹脂等であってよい。絶縁樹脂層8は、樹脂のみからなっていても、樹脂に加えて他の成分を含んでもよい。絶縁樹脂層8は、例えば、フィラーを含んでよい。   The insulating resin layer 8 is provided on the upper surface of the wiring structure 4. The insulating resin layer 8 embeds the electronic components 6a and 6b. The insulating resin layer 8 is a layer containing a resin. The resin may be, for example, an epoxy resin. The insulating resin layer 8 may be made of only a resin or may contain other components in addition to the resin. The insulating resin layer 8 may include a filler, for example.

絶縁樹脂層8は、電子部品6bの非端子部S2bと配線構造体4の非配線部S1との間に位置する隙間封止部Pを有する。絶縁樹脂層8の隙間封止部Pは、電子部品6aの非端子部S2aと配線構造体4の非配線部S1との間にも設けられている。   The insulating resin layer 8 has a gap sealing portion P located between the non-terminal portion S2b of the electronic component 6b and the non-wiring portion S1 of the wiring structure 4. The gap sealing portion P of the insulating resin layer 8 is also provided between the non-terminal portion S2a of the electronic component 6a and the non-wiring portion S1 of the wiring structure 4.

第1密着層42は、電子部品6a,6bと絶縁樹脂層8の隙間封止部Pとを接着する。第1密着層42は、電子部品6aの非端子部S2aと、電子部品6aの非端子部S2aの直下に位置する絶縁樹脂層8の隙間封止部Pとの間に設けられている。図1では、第1密着層42は、電子部品6aの本体部36の表面全体に設けられている。また、第1密着層42は、電子部品6bの非端子部S2bと、電子部品6bの非端子部S2bの直下に位置する絶縁樹脂層8の隙間封止部Pとの間に設けられている。図1では、第1密着層42は、電子部品6bの本体部16の表面全体に設けられている。   The first adhesion layer 42 bonds the electronic components 6 a and 6 b and the gap sealing portion P between the insulating resin layers 8. The first adhesion layer 42 is provided between the non-terminal portion S2a of the electronic component 6a and the gap sealing portion P of the insulating resin layer 8 located immediately below the non-terminal portion S2a of the electronic component 6a. In FIG. 1, the 1st contact | adherence layer 42 is provided in the whole surface of the main-body part 36 of the electronic component 6a. The first adhesion layer 42 is provided between the non-terminal portion S2b of the electronic component 6b and the gap sealing portion P of the insulating resin layer 8 located immediately below the non-terminal portion S2b of the electronic component 6b. . In FIG. 1, the first adhesion layer 42 is provided on the entire surface of the main body 16 of the electronic component 6 b.

第1密着層42は、例えば、シランカップリング剤の反応物を含んでよい。シランカップリング剤は、例えば、アミノ基、ベンゼン環等を含んでよい。シランカップリング剤は、分子鎖の末端にアミノ基を有してよい。シランカップリング剤は、炭素原子と炭素原子との間に、窒素原子を有してよい。シランカップリング剤は、−C−NHで表される基、下記化学式(1)で表される基、−CH−NH−CH−で表される基、下記化学式(2)で表される基等を含んでよい。 The first adhesion layer 42 may include, for example, a reaction product of a silane coupling agent. A silane coupling agent may contain an amino group, a benzene ring, etc., for example. The silane coupling agent may have an amino group at the end of the molecular chain. The silane coupling agent may have a nitrogen atom between carbon atoms. Silane coupling agent is a group represented by -C-NH 2, a group represented by the following chemical formula (1), -CH 2 -NH- CH 2 - , a group represented by the tables in the following chemical formula (2) Or the like.

Figure 2019149465
Figure 2019149465

Figure 2019149465

[式(2)中、R及びRは、それぞれ独立に、炭素数1〜8のアルキル基を表す。]
Figure 2019149465

[In Formula (2), R < 1 > and R < 2 > represents a C1-C8 alkyl group each independently. ]

シランカップリング剤は、例えば、信越化学工業株式会社製のN−2−(アミノエチル)−3−アミノプロピルメチルジメトキシシラン(商品名:KBM−602)、N−2−(アミノエチル)−3−アミノプロピルトリメトキシシラン(商品名:KBM−603)、3−アミノプロピルトリメトキシシラン(商品名:KBM−903)、3−アミノプロピルトリエトキシシラン(商品名:KBE−903)、3−トリエトキシシリル−N−(1,3−ジメチル−ブチリデン)プロピルアミン(商品名:KBE−9103)、N−フェニル−3−アミノプロピルトリメトキシシラン(商品名:KBM−573)等であってよい。   Examples of the silane coupling agent include N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane (trade name: KBM-602) and N-2- (aminoethyl) -3 manufactured by Shin-Etsu Chemical Co., Ltd. -Aminopropyltrimethoxysilane (trade name: KBM-603), 3-aminopropyltrimethoxysilane (trade name: KBM-903), 3-aminopropyltriethoxysilane (trade name: KBE-903), 3-tri It may be ethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine (trade name: KBE-9103), N-phenyl-3-aminopropyltrimethoxysilane (trade name: KBM-573), or the like.

シランカップリング剤の分子量は、例えば、150〜350、又は150〜300であってよい。シランカップリング剤の最小被覆面積は、例えば、250〜450m/g、又は300〜450m/gであってよい。 The molecular weight of the silane coupling agent may be, for example, 150 to 350, or 150 to 300. The minimum coverage area of the silane coupling agent may be, for example, 250 to 450 m 2 / g, or 300 to 450 m 2 / g.

シランカップリング剤は、1種を単独で又は2種以上を組合せて用いることができる。   A silane coupling agent can be used individually by 1 type or in combination of 2 or more types.

第1密着層42の厚みは、例えば、5〜200nmであってよい。   The thickness of the first adhesion layer 42 may be, for example, 5 to 200 nm.

第2密着層44は、配線構造体4と絶縁樹脂層8の隙間封止部Pとを接着する。第2密着層44は、配線構造体4の非配線部S1と、配線構造体4の非配線部S1の直上に位置する絶縁樹脂層8の隙間封止部Pとの間に設けられている。   The second adhesion layer 44 bonds the wiring structure 4 and the gap sealing portion P between the insulating resin layers 8. The second adhesion layer 44 is provided between the non-wiring portion S1 of the wiring structure 4 and the gap sealing portion P of the insulating resin layer 8 located immediately above the non-wiring portion S1 of the wiring structure 4. .

第2密着層44は、例えば、シランカップリング剤の反応物を含んでよい。シランカップリング剤は、例えば、アミノ基、ベンゼン環等を含んでよい。シランカップリング剤は、分子鎖の末端にアミノ基を有してよい。シランカップリング剤は、炭素原子と炭素原子との間に、窒素原子を有してよい。シランカップリング剤は、−C−NHで表される基、上記化学式(1)で表される基、−CH−NH−CH−で表される基、上記化学式(2)で表される基等を含んでよい。シランカップリング剤は、例えば、信越化学工業株式会社製のN−2−(アミノエチル)−3−アミノプロピルメチルジメトキシシラン(商品名:KBM−602)、N−2−(アミノエチル)−3−アミノプロピルトリメトキシシラン(商品名:KBM−603)、3−アミノプロピルトリメトキシシラン(商品名:KBM−903)、3−アミノプロピルトリエトキシシラン(商品名:KBE−903)、3−トリエトキシシリル−N−(1,3−ジメチル−ブチリデン)プロピルアミン(商品名:KBE−9103)、N−フェニル−3−アミノプロピルトリメトキシシラン(商品名:KBM−573)等であってよい。シランカップリング剤の分子量は、例えば、150〜350、又は150〜300であってよい。シランカップリング剤の最小被覆面積は、例えば、250〜450m/g、又は300〜450m/gであってよい。シランカップリング剤は、1種を単独で又は2種以上を組合せて用いることができる。第2密着層44の材料は、第1密着層42の材料と同じであっても、異なってもよい。 The second adhesion layer 44 may include, for example, a reaction product of a silane coupling agent. A silane coupling agent may contain an amino group, a benzene ring, etc., for example. The silane coupling agent may have an amino group at the end of the molecular chain. The silane coupling agent may have a nitrogen atom between carbon atoms. The silane coupling agent is represented by a group represented by —C—NH 2 , a group represented by the above chemical formula (1), a group represented by —CH 2 —NH—CH 2 —, and the above chemical formula (2). Or the like. Examples of the silane coupling agent include N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane (trade name: KBM-602) and N-2- (aminoethyl) -3 manufactured by Shin-Etsu Chemical Co., Ltd. -Aminopropyltrimethoxysilane (trade name: KBM-603), 3-aminopropyltrimethoxysilane (trade name: KBM-903), 3-aminopropyltriethoxysilane (trade name: KBE-903), 3-tri It may be ethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine (trade name: KBE-9103), N-phenyl-3-aminopropyltrimethoxysilane (trade name: KBM-573), or the like. The molecular weight of the silane coupling agent may be, for example, 150 to 350, or 150 to 300. The minimum coverage area of the silane coupling agent may be, for example, 250 to 450 m 2 / g, or 300 to 450 m 2 / g. A silane coupling agent can be used individually by 1 type or in combination of 2 or more types. The material of the second adhesion layer 44 may be the same as or different from the material of the first adhesion layer 42.

第2密着層44の厚みは、例えば、5〜200nmであってよい。   The thickness of the second adhesion layer 44 may be, for example, 5 to 200 nm.

金属層10は、絶縁樹脂層8の上面及び側面、並びに、配線構造体4の側面に設けられている。金属層10は、電子部品の電磁シールドもしくは配線層として機能する。金属層10は、金属を含む層である。金属層10の材料は、電磁シールドもしくは配線の材料であれば特に限定されない。金属層10の材料は、例えば、Cu、Ni、Feなどの導電性元素または磁性元素で構成されていればよい。金属層10は、単一層または複数層等であってよい。金属層10は形成されていなくてもよい。   The metal layer 10 is provided on the upper surface and side surfaces of the insulating resin layer 8 and the side surfaces of the wiring structure 4. The metal layer 10 functions as an electromagnetic shield or wiring layer for electronic components. The metal layer 10 is a layer containing a metal. The material of the metal layer 10 is not particularly limited as long as it is an electromagnetic shield or wiring material. The material of the metal layer 10 should just be comprised with electroconductive elements or magnetic elements, such as Cu, Ni, and Fe, for example. The metal layer 10 may be a single layer or a plurality of layers. The metal layer 10 may not be formed.

本実施形態に係る回路モジュール2は、例えば、以下の方法によって製造することができる。ただし、回路モジュール2の製造方法は、以下の方法に限定されるものではない。   The circuit module 2 according to the present embodiment can be manufactured, for example, by the following method. However, the manufacturing method of the circuit module 2 is not limited to the following method.

まず、配線構造体4及び電子部品6a,6bを用意する。公知のリフロー法などにより、接続部20,22を介して配線構造体4の配線層と各電子部品6a,6bの端子部とを接続して、積層体を得る。   First, the wiring structure 4 and the electronic components 6a and 6b are prepared. By using a known reflow method or the like, the wiring layer of the wiring structure 4 and the terminal portions of the electronic components 6a and 6b are connected via the connecting portions 20 and 22, thereby obtaining a laminate.

次いで、積層体を、第1密着層42及び第2密着層44の原料であるシランカップリング剤を含む液体に浸ける。積層体を液体から取り出し、乾燥させる。   Next, the laminate is immersed in a liquid containing a silane coupling agent that is a raw material for the first adhesion layer 42 and the second adhesion layer 44. The laminate is removed from the liquid and dried.

次いで、配線構造体4の上面に絶縁樹脂層8を形成し、電子部品6a,6bを封止する。絶縁樹脂層8の形成方法は、例えば、トランスファー成形、コンプレッション成形、印刷法、ラミネート法、注型法等であってよい。   Next, an insulating resin layer 8 is formed on the upper surface of the wiring structure 4, and the electronic components 6a and 6b are sealed. The formation method of the insulating resin layer 8 may be, for example, transfer molding, compression molding, printing method, laminating method, casting method or the like.

その後、絶縁樹脂層8の上面及び側面に金属層10を形成する。金属層10の形成方法は、例えば、めっき、スパッタリング等であってよい。   Thereafter, the metal layer 10 is formed on the upper surface and side surfaces of the insulating resin layer 8. The formation method of the metal layer 10 may be plating, sputtering, etc., for example.

本実施形態に係る回路モジュール2では、電子部品6a,6bと絶縁樹脂層8の隙間封止部Pとの間に第1密着層42が設けられ、配線構造体4と絶縁樹脂層8の隙間封止部Pとの間に第2密着層44が設けられている。したがって、絶縁樹脂層8と、電子部品6a,6b及び配線構造体4との密着性が高い。   In the circuit module 2 according to the present embodiment, the first adhesion layer 42 is provided between the electronic components 6a and 6b and the gap sealing portion P of the insulating resin layer 8, and the gap between the wiring structure 4 and the insulating resin layer 8 is provided. Between the sealing portion P, the second adhesion layer 44 is provided. Therefore, the adhesiveness between the insulating resin layer 8 and the electronic components 6 a and 6 b and the wiring structure 4 is high.

以上、本発明の実施形態を詳細に説明したが、本発明は上記実施形態に限定されるものではない。   As mentioned above, although embodiment of this invention was described in detail, this invention is not limited to the said embodiment.

例えば、回路モジュール2において、配線構造体4が有する絶縁層24の下面に配線層が更に設けられていてもよい。絶縁層24の内部に配線層が更に設けられていてもよい。配線構造体4は、単層であっても、多層基板(ビルドアップ基板)であってもよい。配線構造体4は、絶縁層24の上面に設けられた絶縁被覆層を更に備えてよい。絶縁被覆層は、配線層12,14の一部を覆っていてよい。絶縁被覆層は、例えば、ソルダーレジスト層等であってよい。   For example, in the circuit module 2, a wiring layer may be further provided on the lower surface of the insulating layer 24 included in the wiring structure 4. A wiring layer may be further provided inside the insulating layer 24. The wiring structure 4 may be a single layer or a multilayer substrate (build-up substrate). The wiring structure 4 may further include an insulating coating layer provided on the upper surface of the insulating layer 24. The insulating coating layer may cover a part of the wiring layers 12 and 14. The insulating coating layer may be, for example, a solder resist layer.

回路モジュール2において、電子部品の数は2つであるが、少なくとも1つあればよく、1つ、或いは、3つ以上であってよい。電子部品のサイズ及び形状も特に限定されない。電子部品の端子部の数、配線構造体の配線層の数、及び、接続部の数も特に限定されない。   In the circuit module 2, the number of electronic components is two, but at least one is sufficient, and there may be one, or three or more. The size and shape of the electronic component are not particularly limited. The number of terminal parts of the electronic component, the number of wiring layers of the wiring structure, and the number of connection parts are not particularly limited.

回路モジュール2において、第1密着層42は、少なくとも、1つの電子部品の非端子部と絶縁樹脂層8の隙間封止部Pとの間に設けられていればよい。   In the circuit module 2, the first adhesion layer 42 may be provided at least between the non-terminal portion of one electronic component and the gap sealing portion P of the insulating resin layer 8.

上記の回路モジュール2の製造において、第1密着層42及び第2密着層44は、上記積層体を、シランカップリング剤を含む液体に浸けることにより設けられたが、積層体を、シランカップリング剤を含むガスに曝すことにより設けられてもよい。   In the manufacture of the circuit module 2 described above, the first adhesion layer 42 and the second adhesion layer 44 are provided by immersing the laminate in a liquid containing a silane coupling agent. It may be provided by exposure to a gas containing an agent.

回路モジュール2において、金属層10は、絶縁樹脂層8の上面及び側面、並びに配線構造体4の側面に設けられているが、これらに設けられていなくてもよい。   In the circuit module 2, the metal layer 10 is provided on the upper surface and side surfaces of the insulating resin layer 8 and the side surface of the wiring structure 4, but may not be provided on these.

図3及び4に示す回路モジュール52のように、電子部品6a,6bの絶縁樹脂層8と接する全ての面、接続部20,22の絶縁樹脂層8と接する全ての面、及び、配線構造体4の絶縁樹脂層8と接する全ての面にわたって、第1密着層42又は第2密着層44が設けられてもよい。   3 and 4, all surfaces of the electronic components 6a and 6b that are in contact with the insulating resin layer 8, all surfaces of the connecting portions 20 and 22 that are in contact with the insulating resin layer 8, and a wiring structure The first adhesion layer 42 or the second adhesion layer 44 may be provided over all surfaces in contact with the four insulating resin layers 8.

2,52…回路モジュール、4…配線構造体、6a,6b…電子部品、8…絶縁樹脂層、10…金属層、12,14…配線層、16,36…本体部、18,37…端子部、20,22…接続部、24…絶縁層、42…第1密着層、44…第2密着層。   DESCRIPTION OF SYMBOLS 2,52 ... Circuit module, 4 ... Wiring structure, 6a, 6b ... Electronic component, 8 ... Insulating resin layer, 10 ... Metal layer, 12, 14 ... Wiring layer, 16, 36 ... Main part, 18, 37 ... Terminal Part, 20, 22 ... connection part, 24 ... insulating layer, 42 ... first adhesion layer, 44 ... second adhesion layer.

Claims (5)

上面に、複数の配線層、及び、前記配線層以外の非配線部を有する配線構造体と、
前記配線構造体の上面に配置され、前記配線構造体と対向する面に、複数の端子部、及び、前記端子部以外の非端子部を有する電子部品と、
前記電子部品の前記端子部と前記配線構造体の前記配線層とをそれぞれ接続する複数の接続部と、
前記配線構造体の上面に設けられて前記電子部品及び前記接続部を埋め込み、前記電子部品の前記非端子部と前記配線構造体の前記非配線部との間に位置する隙間封止部を有する絶縁樹脂層と、
前記電子部品の前記非端子部と前記絶縁樹脂層の前記隙間封止部との間に設けられた第1密着層と、
前記配線構造体の前記非配線部と前記絶縁樹脂層の前記隙間封止部との間に設けられた第2密着層と、
を備える、回路モジュール。
A wiring structure having a plurality of wiring layers on the upper surface and a non-wiring part other than the wiring layers;
An electronic component that is disposed on the upper surface of the wiring structure and has a plurality of terminal portions and a non-terminal portion other than the terminal portions on a surface facing the wiring structure;
A plurality of connection portions for connecting the terminal portion of the electronic component and the wiring layer of the wiring structure, respectively;
Provided on an upper surface of the wiring structure, the electronic component and the connection portion are embedded, and a gap sealing portion is provided between the non-terminal portion of the electronic component and the non-wiring portion of the wiring structure. An insulating resin layer;
A first adhesion layer provided between the non-terminal portion of the electronic component and the gap sealing portion of the insulating resin layer;
A second adhesion layer provided between the non-wiring portion of the wiring structure and the gap sealing portion of the insulating resin layer;
A circuit module comprising:
前記第1密着層及び前記第2密着層が、シランカップリング剤の反応物を含む、請求項1に記載の回路モジュール。   The circuit module according to claim 1, wherein the first adhesion layer and the second adhesion layer include a reaction product of a silane coupling agent. 前記シランカップリング剤がアミノ基を含む、請求項2に記載の回路モジュール。   The circuit module according to claim 2, wherein the silane coupling agent includes an amino group. 前記電子部品の前記非端子部と前記配線構造体の前記非配線部との間隔が、10〜100μmである、請求項1〜3のいずれか一項に記載の回路モジュール。   The circuit module as described in any one of Claims 1-3 whose space | interval of the said non-terminal part of the said electronic component and the said non-wiring part of the said wiring structure is 10-100 micrometers. 前記電子部品を複数備え、
少なくとも1つの前記電子部品の前記非端子部と前記配線構造体の前記非配線部との間隔と、別の少なくとも1つの前記電子部品の前記非端子部と前記配線構造体の前記非配線部との間隔とが互いに異なる、請求項1〜4のいずれか一項に記載の回路モジュール。
A plurality of the electronic components;
An interval between the non-terminal portion of the at least one electronic component and the non-wiring portion of the wiring structure; and the non-terminal portion of the at least one other electronic component and the non-wiring portion of the wiring structure. The circuit module according to claim 1, wherein the intervals are different from each other.
JP2018033424A 2018-02-27 2018-02-27 Circuit module Pending JP2019149465A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563851A (en) * 1978-11-07 1980-05-14 Fujitsu Ltd Semiconductor device
JP2003309227A (en) * 2002-04-17 2003-10-31 Matsushita Electric Ind Co Ltd Semiconductor device and method of manufacturing the same
JP2010129826A (en) * 2008-11-28 2010-06-10 Denso Corp Electronic apparatus and method of manufacturing the same
JP2014110303A (en) * 2012-11-30 2014-06-12 Tdk Corp Mounting structure of chip component and module product using the same
WO2014128899A1 (en) * 2013-02-22 2014-08-28 株式会社 日立製作所 Resin-sealed electronic control device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563851A (en) * 1978-11-07 1980-05-14 Fujitsu Ltd Semiconductor device
JP2003309227A (en) * 2002-04-17 2003-10-31 Matsushita Electric Ind Co Ltd Semiconductor device and method of manufacturing the same
JP2010129826A (en) * 2008-11-28 2010-06-10 Denso Corp Electronic apparatus and method of manufacturing the same
JP2014110303A (en) * 2012-11-30 2014-06-12 Tdk Corp Mounting structure of chip component and module product using the same
WO2014128899A1 (en) * 2013-02-22 2014-08-28 株式会社 日立製作所 Resin-sealed electronic control device

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