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JP2019033213A - Fixing structure of semiconductor package - Google Patents

Fixing structure of semiconductor package Download PDF

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Publication number
JP2019033213A
JP2019033213A JP2017154318A JP2017154318A JP2019033213A JP 2019033213 A JP2019033213 A JP 2019033213A JP 2017154318 A JP2017154318 A JP 2017154318A JP 2017154318 A JP2017154318 A JP 2017154318A JP 2019033213 A JP2019033213 A JP 2019033213A
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Prior art keywords
semiconductor package
heat sink
insulating member
screw member
male screw
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Japanese (ja)
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勇作 木村
Yusaku Kimura
勇作 木村
光 平島
Hikari Hirashima
光 平島
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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Priority to JP2017154318A priority Critical patent/JP2019033213A/en
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Abstract

To enable the extension of an insulation distance from a semiconductor package to a heat sink while keeping a mounting area of the semiconductor package in the heat sink small in a fixing structure of the semiconductor package.SOLUTION: A fixing structure of a semiconductor package is provided, including: a heat sink 1; a first insulation member 5 and a semiconductor package 2 which are provided in layers in this order on a first principal plane 1a of the heat sink; a second insulation member 6 provided on a second principal plane 1b of the heat sink facing opposite from the first principal plane; a conductive male screw member 3 inserted into the semiconductor package, the first insulation member, the heat sink and the second insulation member; a conductive female screw member 4 screwed in the male screw member to pinch the semiconductor package, the first insulation member, the heat sink and the second insulation member in the arrangement direction of them together with the male screw member; and a cylindrical insulation member 7 which is housed in an insertion hole 11 of the heat sink through which the male screw member passes through to cover the inner periphery of the insertion hole and through which the male screw member is inserted .SELECTED DRAWING: Figure 1

Description

この発明は、半導体パッケージの固定構造に関する。   The present invention relates to a semiconductor package fixing structure.

従来、通電により発熱する半導体パッケージには、例えば特許文献1のように、半導体を封止した樹脂の表面に、放熱用の金属部を露出させたものがある。この種の半導体パッケージは、その金属部を金属製のヒートシンクに対向させ、かつ、金属部を含む半導体パッケージの表面とヒートシンクとの間に絶縁部材(絶縁シート)を挟み込んだ状態で、ネジ止めによりヒートシンクに固定される。具体的には、導電性を有する雄ねじ部材(例えば金属製の雄ねじ部材)を、半導体パッケージ及び絶縁部材に挿通させた上で、ヒートシンクに形成された雌ねじに螺着させることで、半導体パッケージがヒートシンクに固定される。これにより、半導体パッケージの金属部とヒートシンクとを電気的に絶縁しながら、半導体パッケージにおいて生じた熱を半導体パッケージの金属部からヒートシンクに逃がすことができる。   2. Description of the Related Art Conventionally, semiconductor packages that generate heat by energization include one in which a metal part for heat dissipation is exposed on the surface of a resin encapsulating a semiconductor, as in Patent Document 1, for example. In this type of semiconductor package, the metal part is opposed to a metal heat sink, and an insulating member (insulating sheet) is sandwiched between the surface of the semiconductor package including the metal part and the heat sink, and screwed. Fixed to the heat sink. Specifically, an electrically conductive male screw member (for example, a metal male screw member) is inserted into the semiconductor package and the insulating member, and then screwed into the female screw formed on the heat sink, so that the semiconductor package is heat sinked. Fixed to. Accordingly, heat generated in the semiconductor package can be released from the metal portion of the semiconductor package to the heat sink while electrically insulating the metal portion of the semiconductor package and the heat sink.

特開平07−202090号公報Japanese Patent Laid-Open No. 07-202090

ところで、上記した半導体パッケージの固定構造には、半導体パッケージ(特に金属部)とヒートシンクとの電位差が大きくなっても、半導体パッケージとヒートシンクとの電気的な絶縁を確保できるように、半導体パッケージとヒートシンクとの絶縁距離の延長が求められている。しかしながら、従来の半導体パッケージの固定構造では、導電性の雄ねじ部材がヒートシンクに螺着していることで雄ねじ部材とヒートシンクとが同電位となっている。このため、半導体パッケージとヒートシンクとの絶縁距離が、半導体パッケージの金属部から導電性の雄ねじ部材までの距離だけとなり、不十分である。   By the way, the semiconductor package fixing structure described above has a semiconductor package and a heat sink so that electrical insulation between the semiconductor package and the heat sink can be ensured even if the potential difference between the semiconductor package (particularly the metal portion) and the heat sink increases. There is a need to extend the insulation distance. However, in the conventional semiconductor package fixing structure, since the conductive male screw member is screwed to the heat sink, the male screw member and the heat sink have the same potential. For this reason, the insulation distance between the semiconductor package and the heat sink is only the distance from the metal part of the semiconductor package to the conductive male screw member, which is insufficient.

上記した絶縁距離の延長に関し、従来の半導体パッケージの固定構造には、ヒートシンクと押さえ金具との間に半導体パッケージを挟み込み、半導体パッケージから離れた位置において導電性の雄ねじ部材を押さえ金具に挿通させた上でヒートシンクの雌ねじに螺着させたものもある。この構成では、導電性の雄ねじ部材を半導体パッケージの金属部から十分に離すことができるため、半導体パッケージとヒートシンクとの絶縁距離を十分に延長できる。しかしながら、ヒートシンクにおける半導体パッケージの実装領域が大きくなってしまうため、好ましくない。   Regarding the extension of the insulation distance described above, in the conventional semiconductor package fixing structure, the semiconductor package is sandwiched between the heat sink and the pressing metal, and a conductive male screw member is inserted into the pressing metal at a position away from the semiconductor package. Some are screwed onto the heat sink's internal thread above. In this configuration, since the conductive male screw member can be sufficiently separated from the metal portion of the semiconductor package, the insulation distance between the semiconductor package and the heat sink can be sufficiently extended. However, since the mounting area of the semiconductor package in the heat sink becomes large, it is not preferable.

本発明は、上述した事情に鑑みたものであって、ヒートシンクにおける半導体パッケージの実装領域を小さく抑えながら、半導体パッケージからヒートシンクに至る絶縁距離を延長できる半導体パッケージの固定構造を提供することを目的とする。   The present invention has been made in view of the above-described circumstances, and an object thereof is to provide a semiconductor package fixing structure capable of extending an insulation distance from a semiconductor package to a heat sink while suppressing a mounting area of the semiconductor package in the heat sink. To do.

本発明の一態様は、ヒートシンクと、前記ヒートシンクの第一主面に順番に重ねて配される第一絶縁部材及び半導体パッケージと、前記第一主面と反対に向く前記ヒートシンクの第二主面に配される第二絶縁部材と、前記半導体パッケージ、前記第一絶縁部材、前記ヒートシンク及び前記第二絶縁部材に挿通される導電性の雄ねじ部材と、前記雄ねじ部材に螺着されて前記雄ねじ部材と共に前記半導体パッケージ、前記第一絶縁部材、前記ヒートシンク及び前記第二絶縁部材をこれらの配列方向に挟み込む導電性の雌ねじ部材と、前記雄ねじ部材が通る前記ヒートシンクの挿通孔に収容されて前記挿通孔の内周を覆うと共に、前記雄ねじ部材を挿通させる筒状の第三絶縁部材と、を備える半導体パッケージの固定構造である。   One aspect of the present invention includes a heat sink, a first insulating member and a semiconductor package that are sequentially stacked on the first main surface of the heat sink, and a second main surface of the heat sink facing away from the first main surface. A second insulating member disposed on the semiconductor package, a conductive male screw member inserted through the semiconductor package, the first insulating member, the heat sink and the second insulating member; and the male screw member screwed to the male screw member The semiconductor package, the first insulating member, the heat sink and the conductive insulating screw member sandwiching the second insulating member in the arrangement direction, and the insertion hole accommodated in the insertion hole of the heat sink through which the male screw member passes And a cylindrical third insulating member through which the male screw member is inserted, and a semiconductor package fixing structure.

本発明によれば、雄ねじ部材をヒートシンクに対して接触しないように挿通させることで、雄ねじ部材とヒートシンクとの電気的な絶縁を図ることができる。さらに、ヒートシンクの挿通孔の内周と雄ねじ部材の外周との間に筒状の第三絶縁部材が介在することで、雄ねじ部材とヒートシンクとの間の絶縁距離を延長することができる。これにより、半導体パッケージがヒートシンク側に露出する放熱用の金属部を有していても、半導体パッケージの金属部からヒートシンクに至る絶縁距離を延長できる。
また、本発明によれば、雄ねじ部材を半導体パッケージに挿通させるため、押さえ金具を用いる従来構成と比較して、ヒートシンクにおける半導体パッケージの実装領域を小さく抑えることができる。
According to the present invention, the male screw member and the heat sink can be electrically insulated by inserting the male screw member so as not to contact the heat sink. Furthermore, an insulating distance between the male screw member and the heat sink can be extended by interposing the cylindrical third insulating member between the inner periphery of the insertion hole of the heat sink and the outer periphery of the male screw member. Thereby, even if the semiconductor package has the metal part for heat radiation exposed to the heat sink side, the insulation distance from the metal part of the semiconductor package to the heat sink can be extended.
In addition, according to the present invention, since the male screw member is inserted into the semiconductor package, the mounting area of the semiconductor package in the heat sink can be reduced compared to the conventional configuration using the presser fitting.

本発明の第一実施形態に係る半導体パッケージの固定構造を示す断面図である。It is sectional drawing which shows the fixing structure of the semiconductor package which concerns on 1st embodiment of this invention. 本発明の第二実施形態に係る半導体パッケージの固定構造を示す断面図である。It is sectional drawing which shows the fixing structure of the semiconductor package which concerns on 2nd embodiment of this invention. 本発明の第三実施形態に係る半導体パッケージの固定構造を示す断面図である。It is sectional drawing which shows the fixing structure of the semiconductor package which concerns on 3rd embodiment of this invention. 本発明の第四実施形態に係る半導体パッケージの固定構造を示す断面図である。It is sectional drawing which shows the fixing structure of the semiconductor package which concerns on 4th embodiment of this invention.

〔第一実施形態〕
図1を参照して本発明の第一実施形態について説明する。
図1に示すように、この実施形態に係る半導体パッケージの固定構造は、ヒートシンク1と、半導体パッケージ2と、雄ねじ部材3と、雌ねじ部材4と、三つの絶縁部材5,6,7(第一絶縁部材5、第二絶縁部材6、第三絶縁部材7)と、を備える。
[First embodiment]
A first embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 1, the semiconductor package fixing structure according to this embodiment includes a heat sink 1, a semiconductor package 2, a male screw member 3, a female screw member 4, and three insulating members 5, 6, 7 (first Insulating member 5, second insulating member 6, and third insulating member 7).

ヒートシンク1は、導電性を有しかつ熱伝導率が高い材料によって形成されている。本実施形態のヒートシンク1は、アルミニウム等の金属によって形成されている。ヒートシンク1には、これを貫通して雄ねじ部材3が通る挿通孔11が形成されている。
ヒートシンク1は、挿通孔11の軸方向において互いに逆に向く二つの主面1a,1b(第一主面1a、第二主面1b)を有する。ヒートシンク1の主面1a,1bは、例えば凹凸を有する面であってよいが、本実施形態では平坦面である。
The heat sink 1 is made of a material having conductivity and high thermal conductivity. The heat sink 1 of the present embodiment is formed of a metal such as aluminum. The heat sink 1 is formed with an insertion hole 11 through which the male screw member 3 passes.
The heat sink 1 has two main surfaces 1 a and 1 b (first main surface 1 a and second main surface 1 b) that are opposite to each other in the axial direction of the insertion hole 11. The main surfaces 1a and 1b of the heat sink 1 may be uneven surfaces, for example, but are flat surfaces in this embodiment.

本実施形態において、ヒートシンク1の主面1a,1bと挿通孔11の内周との間には、傾斜面12が形成されている。傾斜面12は、挿通孔11の軸方向において挿通孔11の外側に向かうにしたがって挿通孔11の径方向において挿通孔11の外側に延びている。
傾斜面12は、例えば挿通孔11の周方向の一部に形成されてもよいが、本実施形態では挿通孔11の周方向全体に形成されている。これにより、軸方向における挿通孔11の端部は、軸方向において挿通孔11の外側に向かうにしたがって内径寸法が大きくなるように形成されている。傾斜面12は、例えば軸方向における挿通孔11の一方の端部のみに形成されてもよいが、本実施形態では、挿通孔11の両端部に形成されている。
In the present embodiment, an inclined surface 12 is formed between the main surfaces 1 a and 1 b of the heat sink 1 and the inner periphery of the insertion hole 11. The inclined surface 12 extends to the outside of the insertion hole 11 in the radial direction of the insertion hole 11 toward the outside of the insertion hole 11 in the axial direction of the insertion hole 11.
The inclined surface 12 may be formed, for example, in part of the circumferential direction of the insertion hole 11, but is formed in the entire circumferential direction of the insertion hole 11 in this embodiment. Thereby, the end of the insertion hole 11 in the axial direction is formed such that the inner diameter dimension increases toward the outside of the insertion hole 11 in the axial direction. The inclined surface 12 may be formed only at one end portion of the insertion hole 11 in the axial direction, for example, but is formed at both end portions of the insertion hole 11 in the present embodiment.

ヒートシンク1の具体的形状は任意であってよい。本実施形態のヒートシンク1は、板状に形成されている。ヒートシンク1の挿通孔11は、ヒートシンク1の板厚方向(図1において左右方向)に貫通している。ヒートシンク1の二つの主面1a,1bは、いずれもヒートシンク1の板厚方向に向く面である。   The specific shape of the heat sink 1 may be arbitrary. The heat sink 1 of this embodiment is formed in a plate shape. The insertion hole 11 of the heat sink 1 penetrates in the thickness direction of the heat sink 1 (left and right direction in FIG. 1). The two main surfaces 1 a and 1 b of the heat sink 1 are both surfaces facing the thickness direction of the heat sink 1.

半導体パッケージ2は、例えばパワートランジスタ等のように通電により発熱するものである。半導体パッケージ2は、主な熱源である半導体素子(不図示)を封止した樹脂21の表面に放熱用の金属部22を露出させて構成されている。樹脂21は、電気絶縁性を有する。
半導体パッケージ2には、樹脂21及び金属部22を貫通して雄ねじ部材3が通る挿通孔23(パッケージ挿通孔23)が形成されている。金属部22は、パッケージ挿通孔23の内周に露出しないように樹脂21によって覆われている。
The semiconductor package 2 generates heat when energized, such as a power transistor. The semiconductor package 2 is configured by exposing a heat radiating metal portion 22 on the surface of a resin 21 encapsulating a semiconductor element (not shown) as a main heat source. The resin 21 has electrical insulation.
The semiconductor package 2 is formed with an insertion hole 23 (package insertion hole 23) that passes through the resin 21 and the metal portion 22 and through which the male screw member 3 passes. The metal part 22 is covered with the resin 21 so as not to be exposed on the inner periphery of the package insertion hole 23.

樹脂21及び金属部22からなる半導体パッケージ2の部位は、パッケージ本体20を構成している。樹脂21の表面から露出する金属部22の面と、金属部22が露出する樹脂21の表面とからなるパッケージ本体20の露出面20aは、例えば凹凸を有する面であってよいが、本実施形態では平坦面である。   A portion of the semiconductor package 2 including the resin 21 and the metal portion 22 constitutes a package body 20. The exposed surface 20a of the package body 20 including the surface of the metal part 22 exposed from the surface of the resin 21 and the surface of the resin 21 from which the metal part 22 is exposed may be, for example, a surface having irregularities. Then, it is a flat surface.

本実施形態の半導体パッケージ2は、半導体素子に電気接続され、パッケージ本体20(樹脂21)から延びるリード24をさらに有する。本実施形態において、リード24の先端部は回路基板100に接続(図示例ではスルーホール接続)される。
本実施形態の半導体パッケージ2において、パッケージ本体20は板状に形成されている。パッケージ本体20の露出面20aは、パッケージ本体20の板厚方向に向く面である。パッケージ挿通孔23は、パッケージ本体20の板厚方向に貫通している。リード24は、露出面20aに直交する方向に向くパッケージ本体20(樹脂21)の側面20bから延びている。
The semiconductor package 2 of the present embodiment further includes a lead 24 that is electrically connected to the semiconductor element and extends from the package body 20 (resin 21). In the present embodiment, the leading end portion of the lead 24 is connected to the circuit board 100 (through-hole connection in the illustrated example).
In the semiconductor package 2 of the present embodiment, the package body 20 is formed in a plate shape. The exposed surface 20 a of the package body 20 is a surface facing the plate thickness direction of the package body 20. The package insertion hole 23 penetrates in the thickness direction of the package body 20. The lead 24 extends from the side surface 20b of the package body 20 (resin 21) facing in a direction orthogonal to the exposed surface 20a.

第一絶縁部材5は、電気絶縁性を有し、ヒートシンク1の第一主面1aと半導体パッケージ2(第一半導体パッケージ2A)との間に挟み込まれる。すなわち、第一絶縁部材5及び第一半導体パッケージ2Aは、ヒートシンク1の第一主面1aに順番に重ねて配される。
第一半導体パッケージ2Aは、パッケージ本体20の露出面20a(金属部22)が第一絶縁部材5に対向するように配される。すなわち、第一絶縁部材5は、ヒートシンク1とパッケージ本体20の露出面20aとの間に挟み込まれる。第一絶縁部材5は、露出面20aのうち少なくとも金属部22の面を覆えばよい。本実施形態の第一絶縁部材5では、露出面20a全体を覆う。
また、本実施形態では、第一半導体パッケージ2Aのリード24が、ヒートシンク1の第一主面1aに対して間隔をあけて位置している。このため、第一絶縁部材5は、ヒートシンク1の第一主面1aのうちリード24に対向する領域も覆っている。
The first insulating member 5 has electrical insulation and is sandwiched between the first main surface 1a of the heat sink 1 and the semiconductor package 2 (first semiconductor package 2A). That is, the first insulating member 5 and the first semiconductor package 2 </ b> A are arranged in order on the first main surface 1 a of the heat sink 1.
The first semiconductor package 2 </ b> A is arranged so that the exposed surface 20 a (metal part 22) of the package body 20 faces the first insulating member 5. That is, the first insulating member 5 is sandwiched between the heat sink 1 and the exposed surface 20 a of the package body 20. The first insulating member 5 may cover at least the surface of the metal part 22 in the exposed surface 20a. The first insulating member 5 of the present embodiment covers the entire exposed surface 20a.
In the present embodiment, the leads 24 of the first semiconductor package 2 </ b> A are located at a distance from the first main surface 1 a of the heat sink 1. For this reason, the first insulating member 5 also covers a region of the first main surface 1 a of the heat sink 1 that faces the leads 24.

第一絶縁部材5は、第一半導体パッケージ2Aの熱を効率よくヒートシンク1に伝達できるように形成されているとよい。本実施形態において、第一絶縁部材5は絶縁シートである。第一絶縁部材5は例えば可撓性を有してよい。   The first insulating member 5 is preferably formed so that the heat of the first semiconductor package 2A can be efficiently transmitted to the heat sink 1. In the present embodiment, the first insulating member 5 is an insulating sheet. The first insulating member 5 may have flexibility, for example.

第一絶縁部材5には、雄ねじ部材3が通る貫通孔51が形成されている。第一絶縁部材5の貫通孔51の縁部52は、例えばヒートシンク1の挿通孔11の径方向において挿通孔11の内周よりも外側、かつ、前述の傾斜面12よりも内側又は外側に位置してもよい。本実施形態において貫通孔51の縁部52は、挿通孔11の径方向において挿通孔11の内周よりも内側に位置している。貫通孔51の縁部52は、図示例のように径方向において第一半導体パッケージ2Aのパッケージ挿通孔23の内側に位置してもよいが、例えばパッケージ挿通孔23の外側に位置してもよい。   A through hole 51 through which the male screw member 3 passes is formed in the first insulating member 5. The edge 52 of the through hole 51 of the first insulating member 5 is located outside the inner periphery of the insertion hole 11 in the radial direction of the insertion hole 11 of the heat sink 1 and inside or outside of the inclined surface 12 described above, for example. May be. In the present embodiment, the edge portion 52 of the through hole 51 is located inside the inner periphery of the insertion hole 11 in the radial direction of the insertion hole 11. The edge 52 of the through hole 51 may be positioned inside the package insertion hole 23 of the first semiconductor package 2A in the radial direction as in the illustrated example, but may be positioned outside the package insertion hole 23, for example. .

第二絶縁部材6は、電気絶縁性を有し、ヒートシンク1の第二主面1bに配される。本実施形態において、第二絶縁部材6は、第一絶縁部材5と同様に、ヒートシンク1の第二主面1bと半導体パッケージ2(第二半導体パッケージ2B)との間に挟み込まれる。すなわち、第二絶縁部材6及び第二半導体パッケージ2Bは、ヒートシンク1の第二主面1bに順番に重ねて配される。ヒートシンク1及び第二絶縁部材6に対する第二半導体パッケージ2Bの配置は、ヒートシンク1及び第一絶縁部材5に対する第一半導体パッケージ2Aの配置と同様である。
本実施形態の第二絶縁部材6は、第一絶縁部材5と同様に構成されている。すなわち、第二絶縁部材6は絶縁シートである。また、第二絶縁部材6には、雄ねじ部材3が通る貫通孔61が形成されている。また、ヒートシンク1の挿通孔11や半導体パッケージ2のパッケージ挿通孔23に対する第二絶縁部材6の貫通孔61の縁部62の位置も、第一絶縁部材5の場合と同様である。
The second insulating member 6 has electrical insulation and is disposed on the second main surface 1 b of the heat sink 1. In the present embodiment, the second insulating member 6 is sandwiched between the second main surface 1b of the heat sink 1 and the semiconductor package 2 (second semiconductor package 2B), like the first insulating member 5. That is, the second insulating member 6 and the second semiconductor package 2 </ b> B are arranged so as to overlap the second main surface 1 b of the heat sink 1 in order. The arrangement of the second semiconductor package 2B with respect to the heat sink 1 and the second insulating member 6 is the same as the arrangement of the first semiconductor package 2A with respect to the heat sink 1 and the first insulating member 5.
The second insulating member 6 of the present embodiment is configured in the same manner as the first insulating member 5. That is, the second insulating member 6 is an insulating sheet. The second insulating member 6 has a through hole 61 through which the male screw member 3 passes. The positions of the edge portions 62 of the through holes 61 of the second insulating member 6 with respect to the insertion holes 11 of the heat sink 1 and the package insertion holes 23 of the semiconductor package 2 are the same as in the case of the first insulating member 5.

雄ねじ部材3は、導電性を有し、第一半導体パッケージ2A、第一絶縁部材5、ヒートシンク1、第二絶縁部材6及び第二半導体パッケージ2Bに挿通される。本実施形態の雄ねじ部材3は金属製である。
雄ねじ部材3は、例えば雄ねじが形成された軸部(ねじ棒)と、軸部に螺着されるナットとによって構成されてもよい。本実施形態の雄ねじ部材3は、雄ねじが形成された軸部31と、軸部31の一端に一体に形成された頭部32とによって構成されている。
The male screw member 3 has conductivity, and is inserted through the first semiconductor package 2A, the first insulating member 5, the heat sink 1, the second insulating member 6, and the second semiconductor package 2B. The male screw member 3 of the present embodiment is made of metal.
The male screw member 3 may be configured by, for example, a shaft portion (screw rod) on which a male screw is formed and a nut screwed to the shaft portion. The male screw member 3 of the present embodiment includes a shaft portion 31 on which a male screw is formed, and a head portion 32 that is integrally formed on one end of the shaft portion 31.

雄ねじ部材3の軸部31は、例えばヒートシンク1の第二主面1b側からヒートシンク1の挿通孔11に通されてもよいが、本実施形態ではヒートシンク1の第一主面1a側から挿通孔11に通されている。この状態においては、例えば雄ねじ部材3の頭部32が第一半導体パッケージ2Aの樹脂21の表面(露出面20aと反対に向くパッケージ本体20の面)に直接当たってもよい。図示例では、雄ねじ部材3の頭部32と第一半導体パッケージ2Aの樹脂21の表面との間にワッシャ33やばねワッシャ34が介在している。   The shaft portion 31 of the male screw member 3 may be passed through the insertion hole 11 of the heat sink 1 from the second main surface 1b side of the heat sink 1, for example, but in this embodiment, the insertion hole is inserted from the first main surface 1 a side of the heat sink 1. 11 is passed. In this state, for example, the head 32 of the male screw member 3 may directly contact the surface of the resin 21 of the first semiconductor package 2A (the surface of the package body 20 facing away from the exposed surface 20a). In the illustrated example, a washer 33 and a spring washer 34 are interposed between the head 32 of the male screw member 3 and the surface of the resin 21 of the first semiconductor package 2A.

雌ねじ部材4は、導電性を有する。本実施形態の雌ねじ部材4は金属製のナットである。雌ねじ部材4は、上記した雄ねじ部材3に螺着されて、雄ねじ部材3(頭部32)と共に第一半導体パッケージ2A、第一絶縁部材5、ヒートシンク1、第二絶縁部材6及び第二半導体パッケージ2Bをこれらの配列方向に挟み込む。
本実施形態において、雌ねじ部材4は、第二半導体パッケージ2Bから突出する雄ねじ部材3の軸部31に螺着される。この状態においては、例えば雌ねじ部材4が第二半導体パッケージ2Bの樹脂21の表面(露出面20aと反対に向くパッケージ本体20の面)に直接当たってもよい。図示例では、雌ねじ部材4と第二半導体パッケージ2Bの樹脂21の表面との間にワッシャ43が介在している。
The female screw member 4 has conductivity. The female screw member 4 of this embodiment is a metal nut. The female screw member 4 is screwed to the male screw member 3 described above, and together with the male screw member 3 (head 32), the first semiconductor package 2A, the first insulating member 5, the heat sink 1, the second insulating member 6, and the second semiconductor package. 2B is sandwiched between these arrangement directions.
In the present embodiment, the female screw member 4 is screwed to the shaft portion 31 of the male screw member 3 protruding from the second semiconductor package 2B. In this state, for example, the female screw member 4 may directly contact the surface of the resin 21 of the second semiconductor package 2B (the surface of the package body 20 facing away from the exposed surface 20a). In the illustrated example, a washer 43 is interposed between the female screw member 4 and the surface of the resin 21 of the second semiconductor package 2B.

第三絶縁部材7は、電気絶縁性を有し、筒状に形成されている。第三絶縁部材7は、ヒートシンク1の挿通孔11の内周を覆うように挿通孔11に収容される。すなわち、第三絶縁部材7は、挿通孔11の一部空間を埋める絶縁ブッシュである。第三絶縁部材7には、前述した雄ねじ部材3(軸部31)が挿通される。   The third insulating member 7 has electrical insulation and is formed in a cylindrical shape. The third insulating member 7 is accommodated in the insertion hole 11 so as to cover the inner periphery of the insertion hole 11 of the heat sink 1. That is, the third insulating member 7 is an insulating bush that fills a partial space of the insertion hole 11. The above-described male screw member 3 (shaft portion 31) is inserted into the third insulating member 7.

本実施形態では、軸方向における第三絶縁部材7の両端部が、径方向において前述した傾斜面12の内側に位置している。すなわち、本実施形態の第三絶縁部材7は、傾斜面12も覆っている。本実施形態では、軸方向における第三絶縁部材7の寸法(軸方向寸法)が、ヒートシンク1の厚み寸法と同等、または、ヒートシンク1の厚み寸法に対して微小に小さくに設定されている。   In the present embodiment, both end portions of the third insulating member 7 in the axial direction are located inside the inclined surface 12 described above in the radial direction. That is, the third insulating member 7 of the present embodiment also covers the inclined surface 12. In the present embodiment, the dimension (axial dimension) of the third insulating member 7 in the axial direction is set to be equal to the thickness dimension of the heat sink 1 or slightly smaller than the thickness dimension of the heat sink 1.

第三絶縁部材7は、例えばヒートシンク1の挿通孔11に嵌まっていてもよい。すなわち、第三絶縁部材7の外周が挿通孔11の内周に接触してもよい。この状態において、第三絶縁部材7は、例えばヒートシンク1に固定されてもよい。本実施形態において、第三絶縁部材7は、挿通孔11の内周に対して間隔をあけて配されている。すなわち、第三絶縁部材7の外径寸法が、挿通孔11の内径寸法よりも小さく設定されている。   The third insulating member 7 may be fitted into the insertion hole 11 of the heat sink 1, for example. That is, the outer periphery of the third insulating member 7 may contact the inner periphery of the insertion hole 11. In this state, the third insulating member 7 may be fixed to the heat sink 1, for example. In the present embodiment, the third insulating member 7 is arranged with an interval from the inner periphery of the insertion hole 11. That is, the outer diameter dimension of the third insulating member 7 is set smaller than the inner diameter dimension of the insertion hole 11.

第三絶縁部材7は、任意の材料によって形成されてよい。本実施形態の第三絶縁部材7は、ポリカーボネート(PC)、ポリブチレンテレフタレート(PBT)、ポリプロピレンテレフタレート(PPT)などの硬質樹脂によって形成されている。   The third insulating member 7 may be formed of any material. The third insulating member 7 of this embodiment is formed of a hard resin such as polycarbonate (PC), polybutylene terephthalate (PBT), or polypropylene terephthalate (PPT).

前述した第一絶縁部材5の貫通孔51の縁部52は、例えば径方向において上記した第三絶縁部材7の外周よりも外側に位置してもよい。本実施形態において、第一絶縁部材5の貫通孔51の縁部52は、径方向において第三絶縁部材7の外周よりも内側に位置し、第三絶縁部材7に対して挿通孔11の軸方向に重ねて配されている。第一絶縁部材5の貫通孔51の縁部52は、例えば径方向において第三絶縁部材7の内周よりも内側に位置してもよいが、これに限ることは無い。
第三絶縁部材7に対する第二絶縁部材6の貫通孔61の縁部62の位置は、上記した第一絶縁部材5の場合と同様である。
The edge portion 52 of the through hole 51 of the first insulating member 5 described above may be positioned outside the outer periphery of the third insulating member 7 described above in the radial direction, for example. In the present embodiment, the edge 52 of the through hole 51 of the first insulating member 5 is located on the inner side of the outer periphery of the third insulating member 7 in the radial direction, and the axis of the insertion hole 11 with respect to the third insulating member 7. It is arranged in the direction. For example, the edge 52 of the through hole 51 of the first insulating member 5 may be positioned on the inner side of the inner periphery of the third insulating member 7 in the radial direction, but is not limited thereto.
The position of the edge 62 of the through hole 61 of the second insulating member 6 with respect to the third insulating member 7 is the same as that of the first insulating member 5 described above.

本実施形態の半導体パッケージの固定構造では、ヒートシンク1が回路基板100上に配されている。このため、半導体パッケージ2の熱は、例えばヒートシンク1を介して回路基板100に逃がしてもよい。   In the semiconductor package fixing structure of the present embodiment, the heat sink 1 is disposed on the circuit board 100. For this reason, the heat of the semiconductor package 2 may be released to the circuit board 100 via the heat sink 1, for example.

以上説明したように、本実施形態の半導体パッケージの固定構造によれば、雄ねじ部材3は、従来のようにヒートシンク1に螺着されずに、ヒートシンク1の挿通孔11に挿通されている。このため、雄ねじ部材3をヒートシンク1に対して接触しないように挿通させることで、雄ねじ部材3とヒートシンク1との電気的な絶縁を図ることができる。さらに、ヒートシンク1の挿通孔11の内周と雄ねじ部材3(特に軸部31)の外周との間に筒状の第三絶縁部材7が介在することで、ヒートシンク1と雄ねじ部材3との間の絶縁距離を延長することができる。以上のことから、半導体パッケージ2の金属部22からヒートシンク1に至る絶縁距離を延長することができる。   As described above, according to the semiconductor package fixing structure of the present embodiment, the male screw member 3 is inserted into the insertion hole 11 of the heat sink 1 without being screwed to the heat sink 1 as in the prior art. For this reason, electrical insulation between the male screw member 3 and the heat sink 1 can be achieved by inserting the male screw member 3 so as not to contact the heat sink 1. Furthermore, the cylindrical third insulating member 7 is interposed between the inner periphery of the insertion hole 11 of the heat sink 1 and the outer periphery of the male screw member 3 (particularly the shaft portion 31), so that the space between the heat sink 1 and the male screw member 3 is reduced. The insulation distance can be extended. From the above, the insulation distance from the metal part 22 of the semiconductor package 2 to the heat sink 1 can be extended.

また、本実施形態の半導体パッケージの固定構造によれば、雄ねじ部材3を半導体パッケージ2に挿通させる。このため、押さえ金具を用いる従来構成と比較して、ヒートシンク1における半導体パッケージ2の実装領域を小さく抑えることができる。また、押さえ金具が不要であることから、半導体パッケージの固定構造を構成する部品点数を削減し、半導体パッケージの固定構造を含む製品のコストダウンを図ることもできる。   Further, according to the semiconductor package fixing structure of the present embodiment, the male screw member 3 is inserted through the semiconductor package 2. For this reason, the mounting area of the semiconductor package 2 in the heat sink 1 can be reduced as compared with the conventional configuration using the pressing metal. Further, since the pressing metal fitting is unnecessary, the number of parts constituting the semiconductor package fixing structure can be reduced, and the cost of the product including the semiconductor package fixing structure can be reduced.

また、本実施形態の半導体パッケージの固定構造によれば、雄ねじ部材3及び雌ねじ部材4が金属製である。金属製の雄ねじ部材3、雌ねじ部材4は、電気絶縁性を有する合成樹脂製の雄ねじ部材3、雌ねじ部材4と比較して強度(例えば振動等の外力に対する強度、熱変化に対する強度)が高いため、安定して半導体パッケージ2をヒートシンク1に固定することができる。   Moreover, according to the semiconductor package fixing structure of the present embodiment, the male screw member 3 and the female screw member 4 are made of metal. The metal male screw member 3 and female screw member 4 have higher strength (for example, strength against external force such as vibration and strength against thermal change) than the male screw member 3 and female screw member 4 made of synthetic resin having electrical insulation. The semiconductor package 2 can be stably fixed to the heat sink 1.

また、本実施形態の半導体パッケージの固定構造によれば、ヒートシンク1の主面1a,1bと挿通孔11の内周との間に傾斜面12が形成されている。このため、傾斜面12が形成されていない場合と比較して、ヒートシンク1の主面1a,1bと挿通孔11の内周との境界部分から雄ねじ部材3に至る絶縁距離(挿通孔11の径方向における距離)を延長することができる。したがって、半導体パッケージ2からヒートシンク1に至る絶縁距離をさらに延長できる。本実施形態では、ヒートシンク1の主面1a,1bと挿通孔11の内周との境界部分の近くに、第一絶縁部材5や第二絶縁部材6と第三絶縁部材7との境界が位置するため、上記傾斜面12を形成することは特に有効である。   Further, according to the semiconductor package fixing structure of the present embodiment, the inclined surface 12 is formed between the main surfaces 1 a and 1 b of the heat sink 1 and the inner periphery of the insertion hole 11. For this reason, compared with the case where the inclined surface 12 is not formed, the insulation distance (diameter of the insertion hole 11) from the boundary portion between the main surfaces 1 a and 1 b of the heat sink 1 and the inner periphery of the insertion hole 11 to the male screw member 3. Distance in the direction) can be extended. Therefore, the insulation distance from the semiconductor package 2 to the heat sink 1 can be further extended. In the present embodiment, the boundary between the first insulating member 5 or the second insulating member 6 and the third insulating member 7 is located near the boundary portion between the main surfaces 1 a and 1 b of the heat sink 1 and the inner periphery of the insertion hole 11. Therefore, it is particularly effective to form the inclined surface 12.

また、本実施形態の半導体パッケージの固定構造によれば、第一絶縁部材5や第二絶縁部材6の貫通孔51,61の縁部52,62がヒートシンク1の挿通孔11の内周よりも内側に位置している。このため、第一絶縁部材5や第二絶縁部材6の表面に沿ってヒートシンク1から半導体パッケージ2(特に金属部22)に至る沿面距離の延長を図ることができる。
また、本実施形態の半導体パッケージの固定構造によれば、挿通孔11の軸方向において第一絶縁部材5や第二絶縁部材6の貫通孔51,61の縁部52,62が第三絶縁部材7と重なる。このため、雄ねじ部材3及び雌ねじ部材4の締め付け力によって第一絶縁部材5や第二絶縁部材6と第三絶縁部材7との隙間を小さく又は無くすことができる。これにより、ヒートシンク1から半導体パッケージ2に至る絶縁距離をさらに延長できる。
Further, according to the semiconductor package fixing structure of the present embodiment, the edge portions 52 and 62 of the through holes 51 and 61 of the first insulating member 5 and the second insulating member 6 are more than the inner periphery of the insertion hole 11 of the heat sink 1. Located inside. For this reason, it is possible to extend the creeping distance from the heat sink 1 to the semiconductor package 2 (particularly the metal portion 22) along the surfaces of the first insulating member 5 and the second insulating member 6.
In addition, according to the semiconductor package fixing structure of the present embodiment, the edges 52 and 62 of the through holes 51 and 61 of the first insulating member 5 and the second insulating member 6 in the axial direction of the insertion hole 11 are the third insulating member. 7 overlaps. For this reason, the clearance between the first insulating member 5 or the second insulating member 6 and the third insulating member 7 can be reduced or eliminated by the tightening force of the male screw member 3 and the female screw member 4. Thereby, the insulation distance from the heat sink 1 to the semiconductor package 2 can be further extended.

また、本実施形態の半導体パッケージの固定構造によれば、雄ねじ部材3及び雌ねじ部材4が、順に配列された第一半導体パッケージ2A、第一絶縁部材5、ヒートシンク1、第二絶縁部材6及び第二半導体パッケージ2Bを挟み込んでいる。このため、一つの雄ねじ部材3及び雌ねじ部材4により、二つの半導体パッケージ2,2をヒートシンク1の両主面1a,1bに固定することができる。すなわち、雄ねじ部材3をヒートシンク1に螺着させることで半導体パッケージ2をヒートシンク1に固定する従来構成と比較して、少ないねじ止め回数でより多くの半導体パッケージ2をヒートシンク1に固定できる。その結果、半導体パッケージの固定構造を含む製品の生産性向上を図ることができる。   Also, according to the semiconductor package fixing structure of the present embodiment, the first semiconductor package 2A, the first insulating member 5, the heat sink 1, the second insulating member 6 and the first screw member 3 and the female screw member 4 are arranged in order. Two semiconductor packages 2B are sandwiched. For this reason, the two semiconductor packages 2 and 2 can be fixed to both the main surfaces 1 a and 1 b of the heat sink 1 by the single male screw member 3 and the female screw member 4. That is, a larger number of semiconductor packages 2 can be fixed to the heat sink 1 with a smaller number of screwing times compared to the conventional configuration in which the male screw member 3 is screwed to the heat sink 1 to fix the semiconductor package 2 to the heat sink 1. As a result, it is possible to improve the productivity of a product including a semiconductor package fixing structure.

また、本実施形態の半導体パッケージの固定構造において、第三絶縁部材7がヒートシンク1の挿通孔11に嵌まる場合には、第三絶縁部材7の外周と挿通孔11の内周との隙間を小さくする又は無くすことができるため、雄ねじ部材3とヒートシンク1との電気的な絶縁をさらに図ることができる。また、第三絶縁部材7がヒートシンク1の挿通孔11に嵌まって固定される場合には、第三絶縁部材7がヒートシンク1の挿通孔11に対して挿通孔11の軸方向やこれに直交する方向に位置ずれすることも防止できる。   In the semiconductor package fixing structure of the present embodiment, when the third insulating member 7 is fitted into the insertion hole 11 of the heat sink 1, a gap between the outer periphery of the third insulating member 7 and the inner periphery of the insertion hole 11 is formed. Since the size can be reduced or eliminated, electrical insulation between the male screw member 3 and the heat sink 1 can be further achieved. When the third insulating member 7 is fitted and fixed in the insertion hole 11 of the heat sink 1, the third insulating member 7 is in the axial direction of the insertion hole 11 or perpendicular to the insertion hole 11 of the heat sink 1. It is also possible to prevent displacement in the direction of the movement.

〔第二実施形態〕
次に、図2を参照して本発明の第二実施形態について説明する。
以下では、第一実施形態との相違点を中心に説明し、第一実施形態と同一の構成要素については、同一符号を付す等してその説明を省略する。
[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIG.
Below, it demonstrates centering on difference with 1st embodiment, about the component same as 1st embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

図2に示すように、本実施形態の半導体パッケージの固定構造は、第一実施形態と同様に、ヒートシンク1と、半導体パッケージ2と、雄ねじ部材3と、雌ねじ部材4と、三つの絶縁部材5,6C,7C(第一絶縁部材5、第二絶縁部材6C、第三絶縁部材7C)と、を備える。ただし、本実施形態の半導体パッケージの固定構造では、半導体パッケージ2(第一半導体パッケージ2A)がヒートシンク1の第一主面1a側のみに配され、第二主面1b側には配されない。   As shown in FIG. 2, the semiconductor package fixing structure of the present embodiment has a heat sink 1, a semiconductor package 2, a male screw member 3, a female screw member 4, and three insulating members 5 as in the first embodiment. , 6C, 7C (first insulating member 5, second insulating member 6C, third insulating member 7C). However, in the semiconductor package fixing structure of the present embodiment, the semiconductor package 2 (first semiconductor package 2A) is disposed only on the first main surface 1a side of the heat sink 1 and is not disposed on the second main surface 1b side.

また、本実施形態では、ヒートシンク1の第二主面1b側に配される第二絶縁部材6Cと、ヒートシンク1の挿通孔11に収容される筒状の第三絶縁部材7Cとが、一体に形成されている。すなわち、第二絶縁部材6C及び第三絶縁部材7Cは、筒状部91Cと、筒状部91Cの軸方向の第一端部において筒状部91Cの径方向に張り出すフランジ部92Cと、を含む絶縁ブッシュを構成している。
第二絶縁部材6C(フランジ部92C)は、例えば第一実施形態の場合と同様のシート状に形成されてもよいが、本実施形態では、第一絶縁部材5よりも大きな厚みを有する環状に形成されている。
In the present embodiment, the second insulating member 6C disposed on the second main surface 1b side of the heat sink 1 and the cylindrical third insulating member 7C accommodated in the insertion hole 11 of the heat sink 1 are integrally formed. Is formed. That is, the second insulating member 6C and the third insulating member 7C include a cylindrical portion 91C and a flange portion 92C projecting in the radial direction of the cylindrical portion 91C at the first end portion in the axial direction of the cylindrical portion 91C. Insulating bush including.
The second insulating member 6C (flange portion 92C) may be formed in the same sheet shape as in the first embodiment, for example, but in the present embodiment, the second insulating member 6C (flange portion 92C) has an annular shape having a larger thickness than the first insulating member 5. Is formed.

また、第二絶縁部材6Cは、本実施形態では第二主面1bのうち雌ねじ部材4と重なる領域を覆う程度の大きさに形成されている。すなわち、第二絶縁部材6Cの外径寸法は、雌ねじ部材4の外径寸法や、雌ねじ部材4と第二絶縁部材6Cとの間に配されるワッシャの外径寸法よりも若干大きい。
以上のように第二絶縁部材6Cが形成されることで、雌ねじ部材4とヒートシンク1との絶縁距離を十分に確保することができる。
Further, in the present embodiment, the second insulating member 6 </ b> C is formed to a size that covers the region of the second main surface 1 b that overlaps the female screw member 4. That is, the outer diameter dimension of the second insulating member 6C is slightly larger than the outer diameter dimension of the female screw member 4 and the outer diameter dimension of the washer disposed between the female screw member 4 and the second insulating member 6C.
By forming the second insulating member 6 </ b> C as described above, a sufficient insulation distance between the female screw member 4 and the heat sink 1 can be ensured.

本実施形態の半導体パッケージの固定構造によれば、第一実施形態と同様の効果を奏する。
また、本実施形態の半導体パッケージの固定構造によれば、第二絶縁部材6Cと第三絶縁部材7Cとが一体に形成されているため、第二絶縁部材6Cと第三絶縁部材7Cとの隙間を無くすことができる。これにより、ヒートシンク1から雄ねじ部材3(特に軸部31)に至る絶縁距離をさらに延長できる。また、第三絶縁部材7Cをヒートシンク1の挿通孔11に挿入するだけで第二絶縁部材6Cをヒートシンク1の第二主面1bに配することができるため、半導体パッケージの固定構造を組み立てる工数を減らすことが可能となる。
According to the semiconductor package fixing structure of the present embodiment, the same effects as those of the first embodiment can be obtained.
Further, according to the semiconductor package fixing structure of the present embodiment, since the second insulating member 6C and the third insulating member 7C are integrally formed, the gap between the second insulating member 6C and the third insulating member 7C. Can be eliminated. Thereby, the insulation distance from the heat sink 1 to the male screw member 3 (particularly the shaft portion 31) can be further extended. Further, since the second insulating member 6C can be disposed on the second main surface 1b of the heat sink 1 simply by inserting the third insulating member 7C into the insertion hole 11 of the heat sink 1, the number of steps for assembling the semiconductor package fixing structure is reduced. It becomes possible to reduce.

上記第二実施形態においては、例えば雄ねじ部材3の頭部32が第二絶縁部材6C上に重ねて配され、雌ねじ部材4がヒートシンク1の第一主面1a側に配された第一半導体パッケージ2A上に重ねて配されてもよい。   In the second embodiment, for example, the first semiconductor package in which the head 32 of the male screw member 3 is arranged on the second insulating member 6 </ b> C and the female screw member 4 is arranged on the first main surface 1 a side of the heat sink 1. It may be arranged on top of 2A.

上記第二実施形態においては、例えば第一実施形態と同様に、ヒートシンク1の第二主面1b側に第二絶縁部材6Cと第二半導体パッケージ2Bとが順番に重ねて配されてもよい。この場合には、第二絶縁部材6Cが、第一実施形態の場合と同様に、ヒートシンク1と第二半導体パッケージ2Bの金属部22やリード24との間に介在するように、シート状に形成されてよい。   In the second embodiment, for example, similarly to the first embodiment, the second insulating member 6C and the second semiconductor package 2B may be sequentially stacked on the second main surface 1b side of the heat sink 1. In this case, as in the case of the first embodiment, the second insulating member 6C is formed in a sheet shape so as to be interposed between the heat sink 1 and the metal part 22 or the lead 24 of the second semiconductor package 2B. May be.

〔第三実施形態〕
次に、図3を参照して本発明の第三実施形態について説明する。
以下では、第一実施形態との相違点を中心に説明し、第一実施形態と同一の構成要素については、同一符号を付す等してその説明を省略する。
[Third embodiment]
Next, a third embodiment of the present invention will be described with reference to FIG.
Below, it demonstrates centering on difference with 1st embodiment, about the component same as 1st embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

図3に示すように、本実施形態の半導体パッケージの固定構造は、第一実施形態と同様に、ヒートシンク1と、半導体パッケージ2と、雄ねじ部材3と、雌ねじ部材4と、三つの絶縁部材5,6D,7D(第一絶縁部材5、第二絶縁部材6D、第三絶縁部材7D)と、を備える。ただし、本実施形態の半導体パッケージの固定構造では、半導体パッケージ2(第一半導体パッケージ2A)がヒートシンク1の第一主面1a側のみに配され、第二主面1b側には配されない。   As shown in FIG. 3, the semiconductor package fixing structure of the present embodiment has a heat sink 1, a semiconductor package 2, a male screw member 3, a female screw member 4, and three insulating members 5 as in the first embodiment. , 6D, 7D (first insulating member 5, second insulating member 6D, third insulating member 7D). However, in the semiconductor package fixing structure of the present embodiment, the semiconductor package 2 (first semiconductor package 2A) is disposed only on the first main surface 1a side of the heat sink 1 and is not disposed on the second main surface 1b side.

また、本実施形態では、ヒートシンク1の第二主面1bに配される第二絶縁部材6Dが、被挟み込み部63Dと、囲繞部64Dと、を備える。
被挟み込み部63Dは、ヒートシンク1の第二主面1bと雌ねじ部材4との間に挟み込まれる。被挟み込み部63Dには雄ねじ部材3が通る貫通孔61Dが形成されている。被挟み込み部63Dの形状や大きさは任意であってよい。本実施形態の被挟み込み部63Dは、第一絶縁部材5よりも大きな厚みを有する環状に形成されている。
In the present embodiment, the second insulating member 6D disposed on the second main surface 1b of the heat sink 1 includes the sandwiched portion 63D and the surrounding portion 64D.
The sandwiched portion 63 </ b> D is sandwiched between the second main surface 1 b of the heat sink 1 and the female screw member 4. A through hole 61D through which the male screw member 3 passes is formed in the sandwiched portion 63D. The shape and size of the sandwiched portion 63D may be arbitrary. The sandwiched portion 63 </ b> D of the present embodiment is formed in an annular shape having a larger thickness than the first insulating member 5.

囲繞部64Dは、被挟み込み部63Dから雄ねじ部材3の挿通方向に延びて、雌ねじ部材4を囲む。囲繞部64Dの形状や大きさは任意であってよい。本実施形態の囲繞部64Dは、環状に形成された被挟み込み部63Dの周縁においてヒートシンク1の第二主面1bから離れる方向に延びている。
すなわち、本実施形態の第二絶縁部材6Dは、雌ねじ部材4を収容する有底筒状に形成され、被挟み込み部63Dである第二絶縁部材6Dの底部に雄ねじ部材3が通る貫通孔61Dが形成されている。
The surrounding portion 64 </ b> D extends from the sandwiched portion 63 </ b> D in the insertion direction of the male screw member 3 and surrounds the female screw member 4. The shape and size of the surrounding portion 64D may be arbitrary. The surrounding portion 64D of the present embodiment extends in a direction away from the second main surface 1b of the heat sink 1 at the periphery of the sandwiched portion 63D formed in an annular shape.
That is, the second insulating member 6D of the present embodiment is formed in a bottomed cylindrical shape that accommodates the female screw member 4, and a through hole 61D through which the male screw member 3 passes through the bottom of the second insulating member 6D that is the sandwiched portion 63D. Is formed.

第二絶縁部材6Dは、例えば第一実施形態と同様に第三絶縁部材7Dと別個に形成されてよいが、本実施形態では第二実施形態と同様に第三絶縁部材7Dと一体に形成されている。   The second insulating member 6D may be formed separately from the third insulating member 7D, for example, as in the first embodiment, but in this embodiment, the second insulating member 6D is formed integrally with the third insulating member 7D as in the second embodiment. ing.

本実施形態の半導体パッケージの固定構造によれば、第一、第二実施形態と同様の効果を奏する。
また、本実施形態の半導体パッケージの固定構造によれば、雌ねじ部材4が、第二絶縁部材6Dの囲繞部64Dの内側に配されることで、ヒートシンク1(特に第二主面1b)と雌ねじ部材4との絶縁距離を延長することができる。これにより、ヒートシンク1と雄ねじ部材3との間の絶縁距離を延長することができる。
According to the semiconductor package fixing structure of the present embodiment, the same effects as those of the first and second embodiments can be obtained.
Further, according to the semiconductor package fixing structure of the present embodiment, the female screw member 4 is arranged inside the surrounding portion 64D of the second insulating member 6D, so that the heat sink 1 (particularly the second main surface 1b) and the female screw are arranged. The insulation distance with the member 4 can be extended. Thereby, the insulation distance between the heat sink 1 and the external thread member 3 can be extended.

上記第三実施形態においては、例えば雄ねじ部材3の頭部32が第二絶縁部材6Dの囲繞部64Dの内側に配され、雌ねじ部材4がヒートシンク1の第一主面1a側に配された第一半導体パッケージ2A上に重ねて配されてもよい。この場合には、ヒートシンク1と雄ねじ部材3の頭部32との絶縁距離を延長することができる。   In the third embodiment, for example, the head 32 of the male screw member 3 is arranged inside the surrounding portion 64D of the second insulating member 6D, and the female screw member 4 is arranged on the first main surface 1a side of the heat sink 1. One semiconductor package 2 </ b> A may be arranged in an overlapping manner. In this case, the insulation distance between the heat sink 1 and the head 32 of the male screw member 3 can be extended.

上記第三実施形態においては、例えば第一実施形態と同様に、ヒートシンク1の第二主面1b側に第二絶縁部材6Dと第二半導体パッケージ2Bとが順番に重ねて配されてもよい。この場合には、第二絶縁部材6Dの被挟み込み部63Dが、第一実施形態の第二絶縁部材6と同様に、ヒートシンク1と第二半導体パッケージ2Bの金属部22やリード24との間に介在するように、シート状に形成されてよい。また、第二絶縁部材6Dの囲繞部64Dが、雌ねじ部材4(又は雄ねじ部材3の頭部32)と共に第二半導体パッケージ2B(特にパッケージ本体20)を囲むように形成されてよい。   In the third embodiment, for example, similarly to the first embodiment, the second insulating member 6D and the second semiconductor package 2B may be sequentially stacked on the second main surface 1b side of the heat sink 1. In this case, the sandwiched portion 63D of the second insulating member 6D is located between the heat sink 1 and the metal portion 22 or the lead 24 of the second semiconductor package 2B, similarly to the second insulating member 6 of the first embodiment. It may be formed in a sheet shape so as to be interposed. Further, the surrounding portion 64D of the second insulating member 6D may be formed so as to surround the second semiconductor package 2B (particularly the package body 20) together with the female screw member 4 (or the head portion 32 of the male screw member 3).

〔第四実施形態〕
次に、図4を参照して本発明の第四実施形態について説明する。
以下では、第一実施形態との相違点を中心に説明し、第一実施形態と同一の構成要素については、同一符号を付す等してその説明を省略する。
[Fourth embodiment]
Next, a fourth embodiment of the present invention will be described with reference to FIG.
Below, it demonstrates centering on difference with 1st embodiment, about the component same as 1st embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

図4に示すように、本実施形態の半導体パッケージの固定構造は、第一実施形態と同様に、ヒートシンク1と、半導体パッケージ2と、雄ねじ部材3と、雌ねじ部材4Eと、三つの絶縁部材5,6,7(第一絶縁部材5、第二絶縁部材6、第三絶縁部材7)と、を備える。
ただし、本実施形態の半導体パッケージの固定構造では、同一の雌ねじ部材4Eに、雄ねじ部材3を螺着させる複数の雌ねじ孔44Eが形成されている。
As shown in FIG. 4, the semiconductor package fixing structure of the present embodiment has a heat sink 1, a semiconductor package 2, a male screw member 3, a female screw member 4E, and three insulating members 5 as in the first embodiment. 6, 7 (first insulating member 5, second insulating member 6, third insulating member 7).
However, in the semiconductor package fixing structure of the present embodiment, a plurality of female screw holes 44E for screwing the male screw member 3 into the same female screw member 4E are formed.

雌ねじ部材4Eの形状は任意であってよい。ヒートシンク1の主面1b(第二主面1b)に対向する雌ねじ部材4Eの面は、例えば凹凸を有する面であってよいが、本実施形態では平坦面である。また、本実施形態の雌ねじ部材4Eは、平板状に形成されている。複数の雌ねじ孔44Eは、雌ねじ部材4Eの板厚方向に貫通している。   The shape of the female screw member 4E may be arbitrary. The surface of the female screw member 4E facing the main surface 1b (second main surface 1b) of the heat sink 1 may be a surface having irregularities, for example, but is a flat surface in this embodiment. The female screw member 4E of the present embodiment is formed in a flat plate shape. The plurality of female screw holes 44E penetrates in the thickness direction of the female screw member 4E.

本実施形態のヒートシンク1には、複数の挿通孔11が形成されている。複数の挿通孔11は雌ねじ部材4Eの複数の雌ねじ孔44Eに各々対応する位置に形成されている。複数の挿通孔11には、第三絶縁部材7が一つずつ収容されている。図示例のヒートシンク1には、傾斜面12(図1参照)が形成されていないが、例えば形成されてよい。   A plurality of insertion holes 11 are formed in the heat sink 1 of the present embodiment. The plurality of insertion holes 11 are formed at positions corresponding to the plurality of female screw holes 44E of the female screw member 4E. The third insulating members 7 are accommodated one by one in the plurality of insertion holes 11. Although the inclined surface 12 (refer FIG. 1) is not formed in the heat sink 1 of the example of illustration, it may form, for example.

ヒートシンク1の第一主面1aに配される第一絶縁部材5には、複数の貫通孔51が形成されている。複数の貫通孔51は、ヒートシンク1の複数の挿通孔11に各々対応する位置に形成されている。
ヒートシンク1の第一主面1a側には、複数の第一半導体パッケージ2Aが第一絶縁部材5に重ねて配されている。複数の第一半導体パッケージ2Aは、ヒートシンク1の複数の挿通孔11に各々対応する位置に配される。図4においては、第一半導体パッケージ2Aの金属部22(図1等参照)の図示を省略している。
A plurality of through holes 51 are formed in the first insulating member 5 disposed on the first main surface 1 a of the heat sink 1. The plurality of through holes 51 are formed at positions corresponding to the plurality of insertion holes 11 of the heat sink 1.
A plurality of first semiconductor packages 2 </ b> A are arranged on the first insulating member 5 on the first main surface 1 a side of the heat sink 1. The plurality of first semiconductor packages 2 </ b> A are arranged at positions corresponding to the plurality of insertion holes 11 of the heat sink 1. In FIG. 4, illustration of the metal part 22 (refer FIG. 1 etc.) of the 1st semiconductor package 2A is abbreviate | omitted.

ヒートシンク1の第二主面1bに配される第二絶縁部材6には、第一絶縁部材5と同様に、ヒートシンク1の複数の挿通孔11に各々対応する複数の貫通孔61が形成されている。
ヒートシンク1の第二主面1b側には、例えば第二、第三実施形態と同様に半導体パッケージ2が配されなくてもよい。この場合、ヒートシンク1の第二主面1bには、第二絶縁部材6と雌ねじ部材4Eとが重ねて配される。本実施形態では、第一実施形態と同様に、ヒートシンク1の第二主面1b側において複数の第二半導体パッケージ2Bが第二絶縁部材6に重ねて配されている。複数の第二半導体パッケージ2Bは、ヒートシンク1の複数の挿通孔11に各々対応する位置に配される。図4では、第二半導体パッケージ2Bの金属部22(図1等参照)の図示を省略している。
A plurality of through holes 61 corresponding to the plurality of insertion holes 11 of the heat sink 1 are formed in the second insulating member 6 disposed on the second main surface 1 b of the heat sink 1, similarly to the first insulating member 5. Yes.
For example, the semiconductor package 2 may not be disposed on the second main surface 1b side of the heat sink 1 as in the second and third embodiments. In this case, the second insulating member 6 and the female screw member 4E are disposed on the second main surface 1b of the heat sink 1 so as to overlap each other. In the present embodiment, as in the first embodiment, a plurality of second semiconductor packages 2 </ b> B are arranged on the second insulating member 6 on the second main surface 1 b side of the heat sink 1. The plurality of second semiconductor packages 2 </ b> B are arranged at positions corresponding to the plurality of insertion holes 11 of the heat sink 1. In FIG. 4, illustration of the metal part 22 (refer FIG. 1 etc.) of the 2nd semiconductor package 2B is abbreviate | omitted.

ヒートシンク1の複数の挿通孔11に各々収容される複数の第三絶縁部材7は、例えば第二、第三実施形態と同様に第二絶縁部材6と一体に形成されてよいが、本実施形態では第一実施形態と同様に第二絶縁部材6と別個に形成されている。   The plurality of third insulating members 7 respectively accommodated in the plurality of insertion holes 11 of the heat sink 1 may be formed integrally with the second insulating member 6 as in the second and third embodiments, for example. Then, like the first embodiment, it is formed separately from the second insulating member 6.

本実施形態の半導体パッケージの固定構造によれば、第一、第二実施形態と同様の効果を奏し得る。
また、本実施形態の半導体パッケージの固定構造によれば、同一の雌ねじ部材4Eに、雄ねじ部材3を螺着させる複数の雌ねじ孔44Eが形成されている。このため、一つの雌ねじ部材4Eを用いて複数の半導体パッケージ2をヒートシンク1に固定することができる。
According to the semiconductor package fixing structure of this embodiment, the same effects as those of the first and second embodiments can be obtained.
Further, according to the semiconductor package fixing structure of the present embodiment, a plurality of female screw holes 44E for screwing the male screw member 3 into the same female screw member 4E are formed. For this reason, a plurality of semiconductor packages 2 can be fixed to the heat sink 1 using one female screw member 4E.

また、雄ねじ部材3を雌ねじ部材4Eの雌ねじ孔44Eに螺着させる際には、雌ねじ部材4Eが第二半導体パッケージ2Bや第二絶縁部材6に対して回転することを防ぐことができる。このため、雌ねじ部材4Eと第二半導体パッケージ2Bや第二絶縁部材6とが互いに擦れることがない。これにより、雌ねじ部材4Eと第二半導体パッケージ2Bや第二絶縁部材6との間に、第二半導体パッケージ2Bや第二絶縁部材6を上記の擦れから保護するワッシャ(例えば図1−3に記載のワッシャ43)を配する必要が無くなる。すなわち、半導体パッケージの固定構造を構成する部品点数を削減し、半導体パッケージの固定構造を含む製品のコストダウンを図ることができる。   Further, when the male screw member 3 is screwed into the female screw hole 44E of the female screw member 4E, the female screw member 4E can be prevented from rotating with respect to the second semiconductor package 2B and the second insulating member 6. For this reason, the female screw member 4E and the second semiconductor package 2B and the second insulating member 6 do not rub against each other. Thereby, the washer (for example, described in FIGS. 1-3) protects the second semiconductor package 2B and the second insulating member 6 from the rubbing between the female screw member 4E and the second semiconductor package 2B and the second insulating member 6. The need for the washer 43) is eliminated. That is, the number of parts constituting the semiconductor package fixing structure can be reduced, and the cost of the product including the semiconductor package fixing structure can be reduced.

上記第四実施形態においては、例えば複数の雄ねじ部材3の頭部32が第二絶縁部材6上又は複数の第二半導体パッケージ2B上に重ねて配され、雌ねじ部材4Eがヒートシンク1の第一主面1a側に配された複数の第一半導体パッケージ2A上に重ねて配されてもよい。   In the fourth embodiment, for example, the heads 32 of the plurality of male screw members 3 are arranged on the second insulating member 6 or the plurality of second semiconductor packages 2B, and the female screw member 4E is the first main member of the heat sink 1. The plurality of first semiconductor packages 2A arranged on the surface 1a side may be overlaid.

上記第四実施形態の構成には、例えば第三実施形態の構成が適用されてもよい。例えば、第三実施形態の第二絶縁部材6Dの囲繞部64Dが、本実施形態の雌ねじ部材4E及び複数の第二半導体パッケージ2B(特にパッケージ本体20)を囲むように形成されてもよい。   For example, the configuration of the third embodiment may be applied to the configuration of the fourth embodiment. For example, the surrounding portion 64D of the second insulating member 6D of the third embodiment may be formed so as to surround the female screw member 4E and the plurality of second semiconductor packages 2B (particularly the package body 20) of the present embodiment.

以上、本発明の詳細について説明したが、本発明は上述した実施形態に限定されるものではなく、本発明の主旨を逸脱しない範囲において種々の変更を加えることができる。   Although the details of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

1 ヒートシンク
1a 第一主面
1b 第二主面
11 挿通孔
12 傾斜面
2 半導体パッケージ
2A 第一半導体パッケージ
2B 第二半導体パッケージ
3 雄ねじ部材
31 軸部
32 頭部
4,4E 雌ねじ部材
44E 雌ねじ孔
5 第一絶縁部材
51 貫通孔
52 貫通孔52の縁部
6,6C,6D 第二絶縁部材
61,61D 貫通孔
62 貫通孔61の縁部
63D 被挟み込み部
64D 囲繞部
7,7C,7D 第三絶縁部材
DESCRIPTION OF SYMBOLS 1 Heat sink 1a 1st main surface 1b 2nd main surface 11 Insertion hole 12 Inclined surface 2 Semiconductor package 2A 1st semiconductor package 2B 2nd semiconductor package 3 Male screw member 31 Shaft part 32 Head part 4, 4E Female screw member 44E Female screw hole 5 1st One insulating member 51 Through-hole 52 Edges 6, 6C, 6D of through-hole 52 Second insulating members 61, 61D Through-hole 62 Edge 63D of through-hole 61 Encased part 64D Surrounding parts 7, 7C, 7D Third insulating member

Claims (7)

ヒートシンクと、
前記ヒートシンクの第一主面に順番に重ねて配される第一絶縁部材及び半導体パッケージと、
前記第一主面と反対に向く前記ヒートシンクの第二主面に配される第二絶縁部材と、
前記半導体パッケージ、前記第一絶縁部材、前記ヒートシンク及び前記第二絶縁部材に挿通される導電性の雄ねじ部材と、
前記雄ねじ部材に螺着されて前記雄ねじ部材と共に前記半導体パッケージ、前記第一絶縁部材、前記ヒートシンク及び前記第二絶縁部材をこれらの配列方向に挟み込む導電性の雌ねじ部材と、
前記雄ねじ部材が通る前記ヒートシンクの挿通孔に収容されて前記挿通孔の内周を覆うと共に、前記雄ねじ部材を挿通させる筒状の第三絶縁部材と、を備える半導体パッケージの固定構造。
A heat sink,
A first insulating member and a semiconductor package, which are sequentially stacked on the first main surface of the heat sink;
A second insulating member disposed on the second main surface of the heat sink facing away from the first main surface;
A conductive male screw member inserted through the semiconductor package, the first insulating member, the heat sink and the second insulating member;
A conductive female screw member that is screwed to the male screw member and sandwiches the semiconductor package, the first insulating member, the heat sink, and the second insulating member together with the male screw member in the arrangement direction;
A semiconductor package fixing structure comprising: a cylindrical third insulating member that is accommodated in an insertion hole of the heat sink through which the male screw member passes and covers an inner periphery of the insertion hole and through which the male screw member is inserted.
前記ヒートシンクの主面と前記挿通孔の内周との間に、前記挿通孔の軸方向において前記挿通孔の外側に向かうにしたがって前記挿通孔の径方向において前記挿通孔の外側に延びる傾斜面が形成されている請求項1に記載の半導体パッケージの固定構造。   Between the main surface of the heat sink and the inner periphery of the insertion hole, there is an inclined surface that extends to the outside of the insertion hole in the radial direction of the insertion hole toward the outside of the insertion hole in the axial direction of the insertion hole. The semiconductor package fixing structure according to claim 1, wherein the semiconductor package fixing structure is formed. 前記雄ねじ部材が通る前記第一絶縁部材の貫通孔の縁部が、前記挿通孔の径方向において前記挿通孔の内周よりも内側に位置し、かつ、前記挿通孔に挿入された前記第三絶縁部材に対して前記挿通孔の軸方向に重ねて配されている請求項1又は請求項2に記載の半導体パッケージの固定構造。   The edge portion of the through hole of the first insulating member through which the male screw member passes is located on the inner side of the inner periphery of the insertion hole in the radial direction of the insertion hole, and is inserted into the insertion hole. The semiconductor package fixing structure according to claim 1, wherein the semiconductor package fixing structure is arranged so as to overlap with an insulating member in an axial direction of the insertion hole. 前記第二絶縁部材と前記第三絶縁部材とが一体に形成されている請求項1から請求項3のいずれか一項に記載の半導体パッケージの固定構造。   The semiconductor package fixing structure according to any one of claims 1 to 3, wherein the second insulating member and the third insulating member are integrally formed. 前記第二絶縁部材が、
前記ヒートシンクの第二主面と、前記雄ねじ部材の頭部及び前記雌ねじ部材のいずれか一方との間に挟み込まれる被挟み込み部と、
前記被挟み込み部から前記雄ねじ部材の挿通方向に延びて、前記雄ねじ部材の頭部及び前記雌ねじ部材のいずれか一方を囲む囲繞部と、を備える請求項1から請求項4のいずれか一項に記載の半導体パッケージの固定構造。
The second insulating member is
A sandwiched portion sandwiched between the second main surface of the heat sink and either the head of the male screw member or the female screw member;
The surrounding part which extends in the insertion direction of the said external thread member from the said sandwiched part and surrounds either the head part of the external thread member or the said internal thread member is provided in any one of Claims 1-4. Fixed structure of the semiconductor package as described.
前記雌ねじ部材に、前記雄ねじ部材を螺着させる複数の雌ねじ孔が形成されている請求項1から請求項5のいずれか一項に記載の半導体パッケージの固定構造。   The semiconductor package fixing structure according to any one of claims 1 to 5, wherein a plurality of female screw holes into which the male screw member is screwed are formed in the female screw member. 前記半導体パッケージが、前記ヒートシンクとの間に前記第二絶縁部材を挟み込む位置にも配され、
前記雄ねじ部材及び前記雌ねじ部材は、前記配列方向に順に配列された前記半導体パッケージ、前記第一絶縁部材、前記ヒートシンク、前記第二絶縁部材及び前記半導体パッケージを挟み込む請求項1から請求項6のいずれか一項に記載の半導体パッケージの固定構造。
The semiconductor package is also arranged at a position where the second insulating member is sandwiched between the heat sink,
7. The device according to claim 1, wherein the male screw member and the female screw member sandwich the semiconductor package, the first insulating member, the heat sink, the second insulating member, and the semiconductor package that are sequentially arranged in the arrangement direction. The semiconductor package fixing structure according to claim 1.
JP2017154318A 2017-08-09 2017-08-09 Fixing structure of semiconductor package Pending JP2019033213A (en)

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JP2020198713A (en) * 2019-06-03 2020-12-10 三菱重工サーマルシステムズ株式会社 Switching element unit and electric compressor

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JPS5748647U (en) * 1980-09-05 1982-03-18
US20060121703A1 (en) * 2004-12-08 2006-06-08 Delta Electronics, Inc. Assembly structure of electronic element and heat sink
JP2016161101A (en) * 2015-03-04 2016-09-05 東日本旅客鉄道株式会社 High voltage insulation color

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JP2020198713A (en) * 2019-06-03 2020-12-10 三菱重工サーマルシステムズ株式会社 Switching element unit and electric compressor
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