JP2019033126A - Plasma processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform a highly uniform treatment in the plane of a substrate when the processing gas supplied to the revolving substrate is converted into plasma for the treatment. When the central side of a rotary table 12 on which a substrate W is placed is defined as the inside and the outer peripheral side is defined as the outside, an outer edge portion of a passing region of the revolving substrate W in an antenna 31 that radiates an electromagnetic wave to the rotary table 12 Is the opening ratio of the radiating hole 38 per unit area in the region facing the outer edge set smaller than the opening ratio of the radiating hole 38 per unit area in the region facing inward from the region facing the outer edge portion? Or, the opening ratio of the radiation hole 38 per unit area in the region facing the inner edge portion of the passage region of the substrate W is the radiation hole per unit area in the region outwardly deviating from the region facing the inner edge portion. It is set smaller than the aperture ratio of 38. [Selection diagram] Fig. 1

Description

  The present invention relates to a technique for performing plasma processing on a substrate.

In a manufacturing process of a semiconductor device, a film may be formed on a semiconductor wafer (hereinafter referred to as a wafer) as a substrate by, for example, ALD (Atomic Layer Deposition). As a film forming apparatus for performing this ALD, a wafer is placed on a rotary table provided in a vacuum vessel, and the wafer that is revolved by the rotation of the rotary table is supplied with an atmosphere in which a source gas is supplied, and reacts with the source gas. In some cases, the film is formed by repeatedly passing through the atmosphere to which the reaction gas is supplied. About each gas supplied to said rotary table, it may turn into plasma on the said rotary table, and a wafer may be processed by the effect | action of the radical and ion which comprise the said plasma. For example, Patent Document 1 describes a film forming apparatus in which NH ₃ (ammonia) gas, which is a reactive gas, is converted into plasma in order to form a SiN (silicon nitride) film by ALD.

JP 2013-168437 A

In forming a film on a wafer, it is required to increase the uniformity of the film thickness in each part within the surface of the wafer. However, when performing film formation by ALD by revolving the above-mentioned wafer, as will be described in detail later in the section of the embodiment of the invention, the time in which the wafer is exposed to plasma is different and supplied. When the wafer is viewed along the radial direction of the rotary table, the film thickness at both ends becomes smaller than the film thickness at the center due to non-uniform plasma energy There is.

  The present invention has been made based on such circumstances, and its purpose is to provide a technique for performing processing with high uniformity on the surface of a substrate when performing processing by converting the processing gas supplied to the revolving substrate into plasma. Is to provide.

In the plasma processing apparatus of the present invention, a substrate is placed on one side, and a rotary table for revolving the substrate in a vacuum vessel;
A processing gas supply unit for supplying a processing gas to one side of the rotary table;
An antenna provided opposite to the rotary table to radiate electromagnetic waves to the processing gas and turn it into a plasma on the rotary table;
A plurality of the electromagnetic waves provided in the antenna to form a processing region in which the processing gas is turned into plasma in a rotational direction of the turntable so as to extend from the inner edge to the outer edge of the moving region of the revolving substrate. Radiation holes,
With
When the center side of the rotary table is defined as the inside and the outer peripheral side is defined as the outside,
In the antenna, the aperture ratio of the radiation hole per unit area in the region facing the outer edge of the passage region of the substrate is equal to the radiation hole per unit area in the region deviating inward from the region facing the outer edge. The aperture ratio of the radiation hole per unit area in the region facing the inner edge of the passage region of the substrate is set to be smaller than the aperture ratio of the substrate, or the region deviated outward from the region facing the inner edge Is set smaller than the aperture ratio of the radiation hole per unit area.

  According to the present invention, in the antenna facing one surface side of the turntable that revolves the substrate, the region facing the outer edge of the passage region of the substrate and the region deviating inward from the region or the passage of the substrate The aperture ratio of the radiation holes that radiate electromagnetic waves per unit area differs between a region facing the inner edge of the region and a region outside the region. With such a configuration, the energy supplied to each part in the surface of the substrate to be revolved can be made uniform, and a process with high uniformity can be performed in each part in the surface of the substrate.

It is a vertical side view of the film-forming apparatus which concerns on embodiment of this invention. It is a cross-sectional top view of the said film-forming apparatus. It is a vertical side view of the gas shower head provided in the said film-forming apparatus. It is a bottom view of the gas shower head. It is a schematic plan view of the turntable provided in the film forming apparatus. It is a top view of a virtual wafer. It is a top view which shows typically the inside of the processing container of the said film-forming apparatus. It is a top view which shows typically the inside of the processing container of the said film-forming apparatus. It is a graph which shows distribution of the excess plasma energy in each position of the wafer. It is a top view of the slot plate provided in the antenna for turning gas into plasma with the said film-forming apparatus. It is explanatory drawing which shows the outline | summary of the process in the said film-forming apparatus. It is a top view which shows the other structural example of the said slot plate. It is a graph which shows the result of an evaluation test. It is a schematic plan view of the film-forming apparatus used in the evaluation test. It is a graph which shows the result of an evaluation test.

A film forming apparatus 1 which is an embodiment of a plasma processing apparatus of the present invention will be described with reference to a longitudinal side view of FIG. 1 and a transverse plan view of FIG. The film forming apparatus 1 supplies DCS (dichlorosilane) gas, which is a source gas, and NH ₃ gas, which is a reaction gas, to a wafer W that is a substrate made of, for example, silicon, and forms a SiN film on the wafer W by ALD. To do. The wafer W is a circle having a diameter of 300 mm. Further, the SiN film is reformed by supplying H ₂ (hydrogen) gas which is a reformed gas. The NH ₃ gas and the H ₂ gas are converted into plasma and supplied to the wafer W.

In FIG. 1, reference numeral 11 denotes a flat, generally circular vacuum vessel (processing vessel), which is constituted by a vessel main body 11A constituting a side wall and a bottom and a top plate 11B. In the figure, 12 is a circular rotary table provided horizontally in the vacuum vessel 11. In the figure, reference numeral 12A denotes a support portion that supports the center of the back surface of the turntable 12. In the figure, reference numeral 13 denotes a rotation mechanism that rotates the rotary table 12 clockwise in a plan view in the circumferential direction via the support portion 12A during the film forming process. Note that X in the figure represents the rotation axis of the turntable 12.

  On the upper surface (one surface) side of the turntable 12, six circular recesses 14 are provided along the circumferential direction (rotation direction) of the turntable 12, and the wafer W is stored in each recess 14. That is, each wafer W is placed on the rotary table 12 so as to revolve by the rotation of the rotary table 12. The position where the wafer W is placed will be described in more detail. The wafer W is placed on the rotary table 12 so as to be spaced at equal intervals in the rotation direction, and the distance between the center of each wafer W and the rotation axis X described above. Are equal to each other. In FIG. 1, reference numeral 15 denotes a heater, which is provided with a plurality of concentric circles at the bottom of the vacuum vessel 11 and heats the wafer W placed on the rotary table 12. In FIG. 2, reference numeral 16 denotes a transfer port for the wafer W opened on the side wall of the vacuum vessel 11, and is configured to be opened and closed by a gate valve G. The wafer W is transferred between the outside of the vacuum vessel 11 and the inside of the recess 14 via the transfer port 16 by a substrate transfer mechanism (not shown).

On the turntable 12, the gas supply / exhaust unit 2, which is a raw material gas supply unit, the plasma formation unit 3A, the plasma formation unit 3B, and the plasma formation unit 3C are directed downstream in the rotation direction of the turntable 12. They are provided in this order at intervals along the rotation direction. The gas supply / exhaust unit 2 is a unit that supplies DCS gas to the wafer W. The plasma forming units 3 </ b> A to 3 </ b> C are units that perform plasma processing on the wafer W by converting the plasma forming gas supplied onto the turntable 12 into plasma. The plasma forming unit 3C performs plasma processing for nitriding the DCS gas adsorbed on the wafer W to form a SiN film. The plasma forming units 3A and 3B perform plasma processing for modifying the SiN film. Specifically, this modification is desorbed from the film by exposing Cl (chlorine) derived from DCS gas contained in the surface of the film to plasma of H ₂ gas. NH ₃ is adsorbed by the plasma forming unit 3C at the desorbed portion, and Si constituting the film is nitrided, so that a purer (dense) nitride film is formed.

The configuration of the gas supply / exhaust unit 2 will be described with reference to FIG. 3 which is a longitudinal side view and FIG. 4 which is a bottom view. The gas supply / exhaust unit 2 is formed in a fan shape spreading in the circumferential direction (rotation direction) of the rotary table 12 from the center side to the peripheral side of the rotary table 12 in plan view. It is close to and opposed to the upper surface of the turntable 12.

  On the lower surface of the gas supply / exhaust unit 2, a gas discharge port 21, an exhaust port 22 and a purge gas discharge port 23 forming a discharge portion are opened. In order to facilitate identification in the figure, in FIG. 4, the exhaust port 22 and the purge gas discharge port 23 are indicated by a number of dots. A large number of gas discharge ports 21 are arranged in the fan-shaped region 24 inside the peripheral portion of the lower surface of the gas supply / exhaust unit 2. The gas discharge port 21 discharges DCS gas downward in the form of a shower while the turntable 12 is rotating during the film forming process, and supplies the entire surface of the wafer W.

  In the fan-shaped region 24, three sections 24 </ b> A, 24 </ b> B, and 24 </ b> C are set from the center side of the turntable 12 toward the peripheral side of the turntable 12. The gas supply / exhaust unit 2 has mutually separated gas flow paths 25A, 25B, and 25C so that the DCS gas can be independently supplied to the gas discharge ports 21 provided in the respective areas 24A, 24B, and 24C. Is provided. The downstream ends of the gas flow paths 25A, 25B, and 25C are each configured as a gas discharge port 21.

  Each upstream side of the gas flow paths 25A, 25B, and 25C is connected to a DCS gas supply source 26 through a pipe, and a gas supply device 27 including a valve and a mass flow controller is provided in each pipe. It is installed. The gas supply device 27 controls the supply and disconnection of the DCS gas supplied from the DCS gas supply source 26 to the downstream side in the gas flow paths 25A, 25B, and 25C and the flow rate. In addition, each gas supply apparatus other than the gas supply apparatus 27 to be described later is also configured in the same manner as the gas supply apparatus 27, and controls the gas supply / disconnection and the flow rate to the downstream side.

  Next, the exhaust port 22 and the purge gas discharge port 23 will be described. The exhaust port 22 and the purge gas discharge port 23 are annularly opened at the peripheral edge of the lower surface of the gas supply / exhaust unit 2 so as to surround the fan-shaped region 24 and toward the upper surface of the turntable 12. It is located outside the mouth 22. The area inside the exhaust port 22 on the turntable 12 constitutes an adsorption area R0 where the DCS is adsorbed to the surface of the wafer W. The purge gas discharge port 23 discharges, for example, Ar (argon) gas as a purge gas onto the rotary table 12.

  During the film forming process, both the discharge of the source gas from the gas discharge port 21, the exhaust from the exhaust port 22, and the discharge of the purge gas from the purge gas discharge port 23 are performed. As a result, as shown by arrows in FIG. 3, the source gas and the purge gas discharged toward the rotary table 12 are exhausted from the exhaust port 22 toward the exhaust port 22 through the upper surface of the rotary table 12. By thus discharging and exhausting the purge gas, the atmosphere in the adsorption region R0 is separated from the external atmosphere, and the source gas can be supplied to the adsorption region R0 in a limited manner. That is, it is possible to prevent the DCS gas supplied to the adsorption region R0 from being mixed with each gas supplied to the outside of the adsorption region R0 by the gas injectors 51 to 53 described later. A film forming process by ALD can be performed on W.

  In FIG. 3, reference numerals 23A and 23B denote gas passages that are provided in the gas supply / exhaust unit 2, and are provided separately from the above-described raw material gas passages 25A to 25C. The upstream end of the gas flow path 23A is connected to the exhaust port 22, and the downstream end of the gas flow path 23A is connected to the exhaust device 28. By this exhaust device 28, exhaust can be performed from the exhaust port 22. The downstream end of the gas flow path 23B is connected to the purge gas discharge port 23, and the upstream end of the gas flow path 23B is connected to the Ar gas supply source 29. A gas supply device 20 is interposed in a pipe connecting the gas flow path 23 </ b> B and the Ar gas supply source 29.

  Next, the plasma forming unit 3B will be described with reference to FIG. The plasma forming unit 3 </ b> B includes an antenna 31 that radiates microwaves into the vacuum container 11, a coaxial waveguide 32 that supplies microwaves toward the antenna 31, and a microwave generator 33. The antenna 31 is provided on the top plate 11B, and is located above a region where a reaction gas is supplied from a gas injector 52 described later. The antenna 31 is configured as a radial line slot antenna having a dielectric window 34, a slot plate 35, a dielectric plate 36 and a cooling jacket 37.

  The dielectric window 34 is for shortening the wavelength of the microwave, and is made of, for example, alumina ceramic so as to close the opening formed in the top plate 11B of the vacuum vessel 11. On the dielectric window 34, a slot plate 35, which is a metal plate, is provided horizontally. The slot plate 35 is provided with a large number of elongated slot holes (slits) 38 dispersed therein. Adjacent slot holes 38 form a pair and their length directions are orthogonal to each other. . The set of slot holes 38 is arranged along a plurality of, for example, three concentric circles centered on the center of gravity of the slot plate 35.

Further, a dielectric plate 36 made of, for example, alumina ceramic is provided on the slot plate 35. On the dielectric plate 36, for example, a conductive cooling jacket 37 is provided. The cooling jacket 37 is formed with a refrigerant flow path (not shown) through which a refrigerant for cooling the antenna 31 flows. By the way, the dielectric window 34, the slot plate 35, and the dielectric plate 36 are configured in a substantially triangular shape in plan view. Then, assuming that the center side and the outer peripheral side of the turntable 12 are the inside and the outside, respectively, the dielectric window 34, the slot plate 35, and the dielectric plate 36 rotate the turntable 12 in plan view from the inside to the outside. It arrange | positions so that the width | variety may spread in a direction, and it faces the turntable 12.

  The antenna 31 is connected to the microwave generator 33 through a coaxial waveguide 32, a mode converter 39, a waveguide 41, and a matching unit 42 in this order. The coaxial waveguide 32 includes a cylindrical inner conductor 43 and a cylindrical outer conductor 44 in which the inner conductor 43 is accommodated. The upper ends of the inner conductor 43 and the outer conductor 44 are connected to the mode converter 39. The lower end portion of the inner conductor 43 passes through the cooling jacket 37, the dielectric plate 36, and the slot plate 35 and enters a recess provided on the upper surface of the dielectric window 34. In the figure, reference numeral 45 denotes a through hole through which the inner conductor 43 penetrates in the slot plate 35. A lower end portion of the outer conductor 44 is connected to the cooling jacket 37. The microwave generator 33 generates a microwave having a frequency of 2.45 GHz, for example, and the microwave converts a microwave into a propagation mode guided by the coaxial waveguide 32. Via the coaxial waveguide 32. The microwave is supplied to the dielectric plate 36 through the coaxial waveguide 32, radiated from the slot hole 38 of the slot plate 35 to the dielectric window 34, and the space below the dielectric window 34. To be supplied.

Assuming that the processing region where the plasma is formed by the plasma forming unit 3B and the processing is performed is the plasma forming region R2, as described above, the microwave is supplied from the dielectric window 34 to the rotary table 12, thereby the plasma forming region. R 2 is formed below the slot plate 35 and the dielectric window 34. In order to correspond to the planar shapes of the slot plate 35 and the dielectric window 34, the plasma forming region R2 is broadened in the rotational direction from the inner side to the outer side of the turntable 12, and has a generally triangular shape in plan view. Thus, approximately 1/6 of the circumference of the turntable 12 overlaps the plasma forming region R2. By providing the antenna 31 as described above, the plasma formation region R2 is locally formed in the rotation direction of the turntable 12. For example, the plasma formation region R2 has a size that covers the entire wafer W when viewed in plan. Accordingly, the plasma forming region R2 is formed so as to extend from the inner edge to the outer edge of the moving region of the wafer W due to revolution.

Since microwaves are radiated from the slot hole 38 to the dielectric window 34 as described above, the intensity of plasma in each part of the plasma formation region R2 is adjusted by adjusting the aperture ratio of each part of the slot plate 35 by the slot hole 38. can do. More specifically, in the plasma formation region R2, below the region where the aperture ratio per unit area of the slot plate 35 is high, the amount of microwave radiation is larger than other regions, so that the supplied energy is large. The intensity of plasma increases. The configuration of the slot plate 35 will be described in more detail later.

  The plasma forming units 3A and 3C are configured in the same manner as the plasma forming unit 3B. In FIG. 2, regions corresponding to the plasma forming regions R3 in the plasma forming units 3A and 3C are shown as plasma forming regions R1 and R3, respectively. Yes. The plasma forming regions R1, R2, and R3 are configured to have the same size, although the positions in the rotation direction of the turntable 12 are different. When viewed in the rotation direction of the turntable 12, gas injectors 51, 52, respectively, are provided at the downstream end of the plasma forming region R1, the upstream end of the plasma forming region R2, and the downstream end of the plasma forming region R3, respectively. 53 is provided. The gas injectors 51, 52, and 53 that form the processing gas supply unit are configured as, for example, an elongated tubular body whose front end is closed, and extend horizontally from the side wall of the vacuum vessel 11 toward the central region, and the wafer on the turntable 12. Each of them is provided so as to intersect with the W passing region.

The gas injectors 51, 52, 53 have a large number of gas discharge ports 50 extending in the lateral direction along the length direction. For example, when viewed in the rotation direction of the turntable 12, the gas injector 51 discharges gas to the plasma formation region R1 so as to go upstream of the plasma formation region R1, and the gas injector 52 is downstream of the plasma formation region R2. A gas is discharged to the plasma forming region R2 in the direction of the gas, and the gas injector 53 discharges gas to the plasma forming region R3 in a direction of the upstream side of the plasma forming region R3. The gas injector 51 and the gas injector 52 that constitute the reformed gas supply unit are connected to a supply source 54 of H ₂ gas that is a processing gas, and the gas injector 53 that constitutes the reaction gas supply unit is an NH ₃ gas that is a processing gas. Is connected to the supply source 55.

  A separation region 57 is provided between the plasma formation region R2 and the plasma formation region R3. The ceiling surface of the separation region 57 is lower than the ceiling surfaces of the plasma formation region R2 and the plasma formation region R3. As shown in FIG. 2, the separation region 57 is formed in a fan shape that spreads in the circumferential direction of the turntable 12 from the center side to the peripheral side of the turntable 12, and its lower surface is The conductance between the separation region 57 and the turntable 12 is suppressed while facing and close to the upper surface.

  Further, as shown in FIG. 2, outside the turntable 12, it faces the upstream end of the plasma forming region R1, the downstream end of the plasma forming region R2, and the upstream end of the plasma forming region R3. At the position, a first exhaust port 47, a second exhaust port 48, and a third exhaust port 49 are opened. The first exhaust port 47 exhausts the gas discharged from the first gas injector 51 to the plasma formation region R1. The second exhaust port 48 exhausts the gas in the plasma formation region R <b> 2 discharged from the gas injector 52 and is provided in the vicinity of the upstream side of the separation region 57 in the rotation direction. The third exhaust port 49 exhausts the gas in the plasma formation region R <b> 3 discharged from the gas injector 53, and is provided near the downstream side in the rotation direction of the separation region 57.

As described above, since the conductance of the gap between the separation region 57 and the turntable 12 is small, the H ₂ gas discharged from the gas injector 52 is suppressed from flowing downstream of the turntable 12 in the rotation direction of the turntable 12. The air is exhausted from the second exhaust port 48. Since the conductance is so small, the NH ₃ gas discharged from the gas injector 53 is also suppressed from flowing through the gap downstream in the rotation direction of the turntable 12 and is exhausted from the third exhaust port 49. The In the figure, reference numeral 40 denotes an exhaust device, which is constituted by a vacuum pump or the like, and is connected to the first exhaust port 47, the second exhaust port 48, and the third exhaust port 49 via an exhaust pipe. The degree of vacuum in the vacuum vessel 11 is adjusted by adjusting the exhaust amount by the exhaust ports 47 to 49 by a pressure adjusting unit (not shown) provided in the exhaust pipe.

  As shown in FIG. 1, the film forming apparatus 1 is provided with a control unit 10 including a computer, and the control unit 10 stores a program. With respect to this program, a group of steps is set so that a control signal is transmitted to each part of the film forming apparatus 1 to control the operation of each part, and processing described later is executed. Specifically, the number of rotations of the rotary table 12 by the rotation mechanism 13, the flow rate and supply / disconnection of each gas by each gas supply device, the exhaust amount by each exhaust device 28, 40, the microwave generator 33 to the antenna 31 Microwave supply / disconnection, power supply to the heater 15, and the like are controlled by a program. Control of power supply to the heater 15 is control of the temperature of the wafer W, and control of the exhaust amount by the exhaust device 40 is control of the pressure in the vacuum vessel 11. This program is stored in a storage medium such as a hard disk, a compact disk, a DVD, or a memory card, and is installed in the control unit 10.

The outline of the process in the film forming apparatus 1 will be described. As the turntable 12 rotates, the wafer W placed on the turntable 12 revolves. During this revolution, plasma is formed in the plasma formation regions R1 to R3 and the DCS gas is supplied to the adsorption region R0 by the plasma formation units 3A to 3C. Reforming. By the way, the distribution of plasma intensity in the plasma forming regions R1 to R3 is adjusted by the aperture ratio of each part of the slot plate 35 constituting the antenna 31 constituting the plasma forming regions R1 to R3 as described above. The aperture ratio per unit area is not uniform in each part. The reason why the slot plate 35 is configured in this manner will be described below.

In the following description, unless otherwise specified, a large number of slot holes 38 having the same shape are formed in the slot plate 35 at regular intervals so that the aperture ratio per unit area of each part of the slot hole 38 is uniform or almost uniform. It is assumed that the plasma is formed in each part below the slot plate 35 with uniform or substantially uniform intensity. First, the rotation table 12 will be described with reference to FIG. As described above, since the plasma formation regions R1 to R3 are regions that extend from the inside to the outside of the turntable 12, two straight lines along the diameter of the turntable 12 that pass through the center of the turntable 12 and the turntable 12 It can be schematically shown as a fan-shaped region surrounded by an arc along the peripheral edge. In FIG. 5, the plasma forming regions R1 and R3 are represented by hatching as a representative, but the plasma forming region R3 will be described.

The angular velocity of the rotary table 12 is ω. During the processing, the rotary table 12 rotates so that ω is constant, that is, the rotational speed is constant. As shown in FIG. 5, the linear velocities are different from each other from the inside to the outside of the rotary table 12, but the angular velocities ω are the same. Thus, the equal angular velocities ω means that the rotation angles per unit time (θ / t) are equal. Since the plasma formation region R3 is generally fan-shaped as described above, the rotation direction extends from one end to the other end of the rotation table 12 in the radial direction of the turntable 12 in the plasma formation region R3. If the plurality of arc-shaped lines along the line are drawn, these lines are regions where the angular velocities ω are equal to each other, and therefore each arc-shaped line gives plasma energy to the wafer W for the same time. It is an area. Specifically, in FIG. 5, three arc-shaped lines drawn at different positions from the inner side to the outer side of the turntable 12 are displayed as 61A, 61B, 61C. Lines 61A to 61C are regions where plasma energy is applied to the wafer W for the same time.

As described above, the plasma energy intensities are equal to each other in each part of the plasma formation region R3, so that the time during which plasma energy is applied is equal means that an equivalent amount of plasma energy is applied. Accordingly, in the plasma formation region R3, when arc-shaped lines extending in the rotation direction from one end to the other end in the rotation direction of the turntable 12 are drawn at positions separated from each other in the radial direction of the turntable 12, The arc-shaped line is an area that provides the same plasma energy. That is, the arc-shaped lines 61A, 61B, and 61C are regions that give plasma energy equivalent to each other.

Further, as described above, since the wafer W is processed by revolving and passing through the plasma forming region R3, the wafer W is rotated in the rotation direction of the turntable 12 at each position where the distance from the center of the turntable 12 is different. It can be seen that there is an arcuate line that receives energy along. Here, it is assumed that the wafer W is formed in the same fan shape as the plasma formation region R3 as shown in FIG. 6, and is placed on the turntable 12 so that the top of the fan is directed toward the center. The three lines that receive the above arc-shaped energy in the wafer W are represented by 62A, 62B, and 62C, and the distances of the lines 62A to 62C that receive these energy from the center of the rotary table 12 are as follows. The distances from the center of the turntable 12 of the arc-shaped lines 61A to 61C giving the energy described in FIG. 5 are equal to each other. Accordingly, the lengths of the lines 62A, 62B, and 62C that receive energy in the wafer W are equal to the lengths of the lines 61A, 61B, and 61C that apply energy in the plasma formation region R3, respectively.

When the wafer W is fan-shaped, the arc-shaped lines 62A, 62B, and 62C along the rotation direction of the turntable 12 on the wafer W have energy corresponding to the length from the lines 61A, 61B, and 61C. This means that plasma processing is performed with high uniformity between the lines 62A, 62B, and 62C on the wafer W. That is, it means that plasma energy is supplied to the wafer W with high uniformity when viewed along the radial direction from the inside to the outside of the turntable 12. However, the wafer W is not a fan shape as shown in FIG. That is, the lengths of the arcuate lines 61A, 61B, and 61C that give energy actually do not correspond to the lengths of the arcuate lines 62A, 62B, and 62C that receive energy. That is, when the rotary table 12 is viewed along the radial direction, the correspondence between the size of the arc-shaped region that gives energy and the size of the arc-shaped region that receives energy in the wafer W is not uniform.

With reference to FIG. 7, the relationship between the region to which the plasma energy is applied and the region to receive the plasma energy will be described in more detail. In FIG. 7, the region in which the wafer W moves due to the revolution of the turntable 12 as viewed in a plane is equally divided into six in the radial direction of the turntable 12, and an annular divided region from the inside to the outside of the turntable 12. 63A, 63B, 63C, 63D, 63E, and 63F. Further, imaginary lines that divide the annular divided regions 63A to 63F from each other are shown as 64A, 64B, 64C, 64D, 64E, 64F, and 64G from the inside to the outside of the turntable 12.

In FIG. 7, two straight lines are drawn in a radial direction from the center of the turntable 12 toward the peripheral edge so as to form an angle of 30 ° with each other, and are sandwiched between these straight lines. The areas included in the divided area 63F are shaded to form arc-shaped areas 65C and 65F, respectively. As described above, in the plasma formation region, regions having the same angular velocity give the same amount of plasma energy. Therefore, if the arc-shaped regions 65C and 65F are included in the plasma formation region R3, the arc-shaped regions 65C and 65F are This is a region where an equivalent amount of plasma energy is applied to the wafer W. However, as shown in FIG. 7, the area of the portion of the wafer W that passes through the annular divided region 63C is approximately twice the area of the arc-shaped region 65C. On the other hand, the area of the portion of the wafer W that passes through the annular divided region 63F is smaller than the area of the arcuate region 65F. That is, due to the difference between the shape of the wafer W and the shape of the plasma formation region R3, an excessive amount of plasma energy is present outside the turntable 12 compared to the central portion from the inside to the outside of the turntable 12. The wafer W is supplied.

With reference to FIG. 8, the influence of the deviation between the shape of the wafer W and the shape of the plasma formation region R3 will be further described. Also in FIG. 8, the plasma forming region R3 is indicated by hatching, and the wafer W is contained in the plasma forming region R3. And about said virtual line 64A-64G, the location which is contained in plasma formation area | region R3 but does not overlap with the wafer W is shown by the comparatively thick line by a continuous line. The larger the total length of the thick lines, the larger the energy relative to the area receiving the energy in the radial direction of the turntable 12, that is, the area of the wafer W, at the position in the radial direction of the turntable 12 where the virtual line is drawn. The area of the region that gives is excessive. Thereafter, the straight line along the diameter of the wafer W from the inner end of the turntable 12 to the outer end of the wafer W is referred to as an axis A, and the axis A is indicated by a solid line in FIG.

The graph of FIG. 9 shows data corresponding to the total value of the lengths of the thick lines in the above virtual lines. The vertical axis of the graph indicates a value corresponding to the total length of the thick lines for each virtual line. More specifically, the value corresponding to this total value is a relative value when the total value of the lengths of the virtual lines 64C is 10 and the total value of the lengths of the phantom lines 64C is 10 Value. Since the thick line is set as described above, it can be said that the value on the vertical axis corresponds to the amount of plasma energy excessively supplied to the wafer W. The horizontal axis of the graph indicates the position of the wafer W on the axis A as a distance away from the center when the center of the wafer W is 0 mm (unit: mm), and the position closer to the inside of the rotary table 12. Is attached with a sign of +, and a position near the outside of the rotary table 12 is attached with a sign of-. The position where the virtual line overlaps the axis A is the position representing the total value of the thick lines for the virtual line on the horizontal axis of the graph.

In FIG. 9, values corresponding to the total value of each thick line are plotted in the graph, and each plot (point) is connected by a line. Moreover, in this graph, the thin auxiliary line along the horizontal axis of the said graph is shown. A thick auxiliary line is attached from this auxiliary line to each plot along the vertical axis of the graph. As described above, plotting is performed so as to correspond to the total value of the thick lines 64A to 64G. Therefore, the length of the thick auxiliary line along the vertical axis corresponds to the total value of the lengths of the thick lines 64A to 64G shown in FIG. The waveform of the graph obtained by connecting the plots as described above is a film formed on the wafer W when the slot plate 35 having a substantially uniform aperture ratio in each part, which is shown in an evaluation test described later, is used. Is approximately equal to the film thickness distribution. Specifically, in FIG. 9, when viewed along the radial direction of the turntable 12, both ends of the wafer W are excessively supplied with plasma compared to the central portion, and the outside of the turntable 12 is outside. It is indicated that the plasma energy is supplied to the end portion closer to the inner side than the end portion closer to the inner side of the rotary table 12. On the other hand, in the evaluation test, when looking at the film thickness along the axis A, the film thickness at both ends of the axis A is smaller than the film thickness at the center, and the film thickness at the end near the outer side of the turntable 12. The film thickness distribution was smaller than the film thickness at the end near the inside of the turntable 12. That is, the plasma energy excessively supplied to the wafer W and the film thickness of the wafer W are related to each other, and the film thickness decreases as the plasma energy is supplied excessively.

Therefore, in order to ensure that the plasma energy supplied to the size of the area of the wafer W is appropriate in each region from the inside to the outside of the turntable 12, the radial direction of the turntable 12 is used in the slot plate 35 described above. Slot holes 38 are formed so that the aperture ratio per unit area differs for each region along the line. FIG. 10 shows a plan view of an example of the slot plate 35 configured as described above. In the slot plate 35, regions overlapping the annular divided regions 63A to 63F are set as slot plate divided regions 66A to 66F. That is, as shown in FIG. 10, the revolving wafer W passes below the slot plate division regions 66A to 66F. As described above, in the slot plate 35, a set of slot holes 38 is arranged along a concentric circle, but the sizes of the slot holes 38 formed for each slot plate dividing region 66 are different from each other.

Since the slot hole 38 is thus configured, the aperture ratio per unit area is slot plate division region 66C> slot plate division region 66B> slot plate division region 66A, and slot plate division region 66C> slot. Plate division region 66D> slot plate division region 66E> slot plate division region 66F, and slot plate division region 66F is made the smallest. That is, for any position in each of the slot plate division regions 66A to 66F, for example, when the region A1 having the same shape and the same size is set as a unit area in an arc shape along the rotation direction of the turntable 12, That is, the total area of the slot holes 38 in A1 / the area of the region A1 has the above-described relationship between the slot plate divided regions 66A to 66F. To give a more specific example, when the aperture ratio per unit area in the slot plate division region 66C facing the region through which the central portion of the wafer W passes is 100%, the slot plate division region 66D and the slot plate division. The aperture ratio per unit area is set so as to be 90% for the region 66B, 70% for the slot plate division regions 66A and 66E, and 40% for the slot plate division region 66F. FIG. 10 shows an outline of the size of the slot hole 38 in each region, and is not drawn so as to have the aperture ratio described above exactly.

That is, in the antenna 31, the aperture ratio of the slot hole 38 per unit area in the slot plate division region 66F that is the region facing the outer edge of the passing region of the wafer W is inward of the turntable 12 from the slot plate division region 66F. The opening ratio of the slot holes 38 per unit area in the slot plate divided regions 66E to 66C, which is a region that is not included, is set to be smaller. In the antenna 31, the aperture ratio of the slot holes 38 per unit area in the slot plate division region 66 </ b> A, which is a region facing the inner edge of the passage region of the wafer W, is determined from the slot plate division region 66 </ b> A to the inside of the turntable 12. It is set to be smaller than the opening ratio of the slot hole 38 per unit area in the slot plate divided regions 66B and 66C which are regions that are close to each other.

Thus, the aperture ratios per unit area of the slot plate division regions 66A to 66F are set so as to correspond to the excessive energy distribution shown in the graph of FIG. From the graph of FIG. 9, when uniform plasma energy is radiated in the slot division regions 66A to 66F, it is supplied to the area of the wafer W passing through the annular division region 63F particularly in the annular division region 63F. As shown in the graph, the value of the vertical axis of the graph becomes 4 or less at the outer peripheral end of the wafer W. Therefore, the slot plate division region 66F is, for example, 40% or less when the aperture ratio per unit area in the slot plate division region 66C corresponding to the region through which the central portion of the wafer W passes as described above is 100%. It is preferable to make it. Although the slot plate 35 of the plasma forming unit 3C has been described, the slot plates 35 of the plasma forming units 3A and 3B are configured similarly to the slot plate 35 of the plasma forming unit 3C.

  Hereinafter, the processing by the film forming apparatus 1 will be described in detail. First, the six wafers W are transferred to the concave portions 14 of the turntable 12 by the substrate transfer mechanism. And the gate valve G provided in the conveyance port 16 of the vacuum vessel 11 is closed, and the inside of the vacuum vessel 11 is made airtight. The wafer W placed in the recess 14 is heated to a predetermined temperature by the heater 15. Then, by exhausting from the first to third exhaust ports 47, 48, and 49, the inside of the vacuum container 11 is made a vacuum atmosphere with a predetermined pressure, and the turntable 12 rotates at a predetermined number of rotations.

Then, H ₂ gas is supplied from the gas injectors 51 and 52 to the plasma forming regions R 1 and R 2, respectively, and NH ₃ gas is supplied from the gas injector 53 to the plasma forming region R ₃ . While each gas is supplied in this way, a microwave is supplied from the microwave generator 33, and by this microwave, plasma of H ₂ gas is supplied to the plasma formation regions R1 and R2, and NH ₃ gas is supplied to the plasma formation region R3. Each plasma is formed. In the gas supply / exhaust unit 2, DCS gas is discharged from the gas discharge port 21, and Ar gas is discharged from the purge gas discharge port 23, and exhaust is performed from the exhaust port 22. FIG. 11 shows the state in which the gas is supplied from each part in the vacuum container 11 as described above, and the flow of each gas is indicated by an arrow.

When the wafer W is positioned in the adsorption region R0 by the rotation of the turntable 12, DCS gas is supplied to the surface of the wafer W and is adsorbed. Subsequently, the turntable 12 rotates and the wafer W moves to the plasma formation region R1. At this time, since the slot plate 35 of the plasma forming unit 3A is formed as described above, the plasma intensity of the H2 gas when viewed along the radial direction of the turntable 12 in the plasma forming region R1 is as shown in FIG. The intensity corresponds to the graph described in FIG. Specifically, when the plasma forming region R1 is viewed in the radial direction of the turntable 12, the plasma intensity at the end near the inside of the turntable 12 and the plasma intensity at the end near the outside of the turntable 12 It is smaller than the plasma intensity at the center in the direction. In particular, the plasma intensity at the end near the outside of the turntable 12 is the smallest. Since the distribution of the plasma intensity is formed in this way, the integrated value of the supplied plasma energy is uniform when viewed along the axis A of the wafer W, and the wafer W passes through the plasma formation region R1. Is subjected to plasma treatment with high uniformity in the surface, and the layer is modified by the attached DCS.

Subsequently, the wafer W moves to the plasma formation region R2, and is plasma-processed with high uniformity within the surface in the same manner as when the wafer W is positioned in the plasma formation region R1, and then the modification is performed. Thereafter, the wafer W moves to the plasma formation region R3 and is plasma-treated with NH3 gas. Also in this plasma formation region R3, NH3 is adsorbed to the wafer W with high uniformity within the surface of the wafer W by being subjected to plasma treatment with high uniformity within the surface in the same manner as when located in the plasma formation region R1. A thin film of SiN, which is a reaction product, is formed by reaction with DCS gas. The rotation of the turntable 12 is continued, and the wafer W repeatedly moves in order through the adsorption region R0, the plasma formation region R1, the plasma formation region R2, and the plasma formation region R3, and a thin layer of SiN is deposited, so that the film thickness of the SiN film is increased. As the temperature rises, reforming proceeds. As described above, plasma processing is performed with high uniformity in each plasma formation region R1 to R3, so that the film thickness increases in a state where the film thicknesses are aligned with each other in each part of the surface of the wafer W. When the thickness of the SiN film reaches a desired size, the discharge and exhaust of each gas in the gas supply / exhaust unit 2 are stopped, and the supply of gas and the supply of microwaves to the plasma formation regions R1 to R3 are stopped. Thereafter, the wafer W is unloaded from the film forming apparatus 1 by the substrate transfer mechanism.

According to the film forming apparatus 1, the aperture ratio per unit area by the slot hole 38 differs when the antenna 31 that radiates microwaves in the plasma forming units 3 </ b> A to 3 </ b> C is viewed along the radial direction of the turntable 12. ing. With such different aperture ratios, the plasma intensity per unit area at the end portion on the center portion side of the turntable 12 and the plasma intensity per unit area at the end portion on the peripheral edge side of the turntable 12 are the turntable 12. The plasma intensity per unit area at the center of the plasma is made smaller. Thereby, plasma processing with high uniformity can be performed in the plane of the wafer W, and the uniformity of the film thickness formed in the plane of the wafer W can be increased.

By the way, in the slot plate 35 shown in FIG. 10, the aperture ratio per unit area of the slot plate divided regions 66A to 66F is adjusted by adjusting the size of the slot hole 38 as described above. The aperture ratio per unit area may be adjusted by adjusting the number of 38. For example, FIG. 12 shows a slot plate 35 in which slot holes 38 having the same size are formed. Since the slot plate dividing regions 66A and 66E have a relatively small number of slot holes 38, the slot plate dividing regions 66B to 66E have a larger opening ratio per unit area than the slot plate dividing regions 66A and 66E. By forming the slot hole 38 in this way, the uniformity of the plasma energy supplied to the wafer W is increased.

Note that the aperture ratio per unit area of the slot plate division regions 66B to 66F is uniform, and only the aperture ratio per unit area of the slot plate division region 66A is greater than the aperture ratio per unit area of the slot plate division regions 66B to 66F. The slot plate 35 may be formed so as to be smaller. Further, the aperture ratio per unit area of the slot plate division regions 66A to 66E is uniform, and only the aperture ratio per unit area of the slot plate division region 66F is larger than the aperture ratio per unit area of the slot plate division regions 66A to 66E. The slot plate 35 may be formed so as to be smaller. That is, the case where the slot plate 35 is configured so that the plasma energy supplied to either the inner end portion or the outer end portion of the wafer W viewed in the radial direction of the turntable 12 is suppressed. Included in the scope of rights. In adjusting the size of the slot hole 38, each slot hole 38 has a similar shape in the above-described example. However, the slot hole 38 does not have such a similar shape. The lengths of the holes 38 may be changed with each other. Further, the slot holes 38 forming the same set may have different sizes.

By the way, only one of the plasma formation regions R1 to R3 may be processed using the slot plate 35 described above. Even in that case, the uniformity of the film thickness can be increased by performing the reforming with the H ₂ gas or the nitriding with the NH ₃ gas with high uniformity. Further, the plasma forming unit to which the above-described slot plate 35 is applied is not limited to the one that converts the reformed gas and the reaction gas for film formation into plasma. For example, the film formed on the surface of the wafer W is etched. Therefore, the etching gas supplied onto the turntable 12 may be converted into plasma. Further, the present invention is not limited to an apparatus for forming a film by ALD, and may be applied to an apparatus for forming a film by CVD (Chemical Vapor Deposition). The present invention is not limited to the above-described embodiments, and the embodiments can be appropriately changed or combined.

Evaluation test Hereinafter, an evaluation test performed in connection with the present invention will be described.
Evaluation test 1
This evaluation test 1 is the evaluation test described in FIG. In the gas supply / exhaust unit 2, film formation processing was performed by changing the number of gas discharge ports 21 in the area 24 </ b> C on the outer peripheral side of the turntable 12, and the film thickness on the axis A of the wafer W was measured. As described above, the aperture ratio per unit area of each part in the plane of the slot plate 35 of each of the plasma forming units 3A to 3C used in this evaluation test is substantially uniform. Evaluation test 1-1 includes 21 gas discharge ports 21, evaluation test 1-2 includes 256 gas discharge ports 21, and evaluation test 1-3 includes 45 gas discharge ports 21. It was.

The graph of FIG. 13 shows the result of the evaluation test 1 described above. In the graph of FIG. 13, the horizontal axis indicates the position (unit: mm) on the axis A of the wafer W as in the horizontal axis of the graph of FIG. 9, and the vertical axis of the graph indicates the film thickness (unit: Å). . The results of the evaluation test 1-1 are indicated by a triangular plot, the results of the evaluation test 1-2 are indicated by a square plot, and the results of the evaluation test 1-3 are indicated by a round plot. As shown in this graph, in each of the evaluation tests 1-1, 1-2, and 1-3, the film thicknesses at the inner end and the outer end of the rotary table 12 are relatively small. The film thickness at the outer end is smaller between the film thickness at the inner end and the film thickness at the outer end. Thus, the film thickness distribution of the evaluation tests 1-1 to 1-3 corresponds to the excessive plasma energy distribution described with reference to the graph of FIG.

・ Evaluation test 2
First, the film forming apparatus 7 for forming a SiO ₂ (silicon oxide) film on the wafer W by ALD used in the evaluation test 2 will be described focusing on differences from the film forming apparatus 1. FIG. 14 is a schematic plan view of the film forming apparatus 7. The difference between the film forming apparatus 7 and the film forming apparatus 1 will be described. The source gas containing silicon and the oxidizing gas are supplied from the gas injectors 71 and 72 to different positions in the rotation direction of the turntable 12, respectively. Is done. The gas injectors 71 and 72 have the same configuration as that of the gas injectors 51 to 53, but the discharge port 50 is directed downward so as to discharge gas downward. Between the source gas supply region to which these source gases are supplied and the oxidation region to which the oxidizing gas is supplied, a separation region (not shown) to which a separation gas for separating the atmosphere is supplied is provided. Further, a reforming gas that is a mixed gas of, for example, argon and oxygen for reforming the film is supplied onto the turntable 12 by a gas injector (not shown), and the reforming gas is plasma. A plasma forming region R4 is provided. Accordingly, the film W and the reforming process are performed by passing the wafer W through the source gas supply region, the oxidation region, and the plasma formation region R4 in order by the revolution.

The top plate of the film forming apparatus 7 is provided with a window 73 made of quartz above the modified region, and a grounded metal plate 74 is provided on the window 73. A coil 75 wound around a horizontal axis is provided above the metal plate 74 via an insulator (not shown), and a high frequency of 13.56 MHz, for example, is supplied from the high frequency power source 76 to the coil 75. The metal plate 74 is provided with a number of elongated slits 77 that intersect with the planar view coil 75 at intervals along the winding direction of the coil 75. Further, the metal plate 74 is surrounded by a slit 77 and has an opening 78 so as to overlap with the opening region in the center of the coil 75. The metal plate 74 is configured as a Faraday shield, attenuates the electric field component of the electromagnetic wave generated around the coil 75 supplied with a high frequency, and rotates through the window 73 through the slit 77 together with the magnetic field component. It has a role of radiating on the table 12. Plasma generated by the inductive coupling of the reformed gas is formed by the high frequency supplied as such. That is, the slit 77 forms a radiation hole that radiates electromagnetic waves to the rotary table 12.

A SiO ₂ film was formed by the film forming apparatus 7 described above, and the film thickness at the axis A of the wafer W was measured. This is designated as evaluation test 2-1. Further, an SiO ₂ film was formed under the same conditions as those in the evaluation test 2-1, except that a part of the slit 77 of the metal plate 74 was covered with a metal tape, and the axis of the wafer W was The film thickness at A was measured. This is designated as Evaluation Test 2-2. In FIG. 14, in the metal plate 74, the portion where the tape is applied is surrounded by a chain line.

FIG. 15 is a graph showing the results of evaluation test 2. The horizontal axis of the graph indicates the position (unit: mm) of the wafer W on the axis A. Unlike the graph of FIG. 9, the inner end of the rotary table 12 is indicated as 0 mm. The vertical axis of the graph represents the film thickness (unit: Å). In the evaluation test 2-1, the film thickness at the positions 50 mm and 250 mm is smaller than the film thickness at the other positions. However, in the evaluation test 2-2, the film thickness at a position of 250 mm is larger than the film thickness at 100 mm to 200 mm. Further, the difference in film thickness at the position of 50 mm and the difference in film thickness at other positions are smaller in the evaluation test 2-2 than in the test 2-1. The positions of 50 mm and 250 mm on the wafer W correspond to the positions covered with the tape.

That is, from this evaluation test 2, it was confirmed that the film thickness at the corresponding position can be suppressed by closing the radiation hole that emits the electromagnetic wave for turning the gas into plasma. From this result, also in the antenna 31 of the film forming apparatus 1 that radiates microwaves from the slot hole 38, the thickness of the film formed at the corresponding position is adjusted by adjusting the size of the slot hole 38. I can see that That is, from this evaluation test 2, the effect of the present invention was confirmed. Note that, instead of the antenna 31 described in the embodiment of the invention, the film 73 is provided with the window 73, the coil 75, and the metal plate 74 described in the evaluation test 2 as antennas, and the slit 77 in the plane of the metal plate 74 is provided. The case where the intensity of the plasma supplied to the surface of the wafer W is adjusted by adjusting the aperture ratio is also included in the scope of the present invention. Therefore, the electromagnetic wave supplied to the processing container is not limited to the microwave.

R1 to R3 Plasma formation region W Wafer 1 Film forming apparatus 11 Vacuum vessel 12 Rotary table 2 Gas supply / exhaust units 3A to 3C Plasma formation unit 31 Antenna 32 Slot plate 33 Slot holes 51 to 53 Gas injector

Claims (8)

A turntable for revolving the substrate in a vacuum vessel, where the substrate is placed on one side,
A processing gas supply unit for supplying a processing gas to one side of the rotary table;
An antenna provided opposite to the rotary table to radiate electromagnetic waves to the processing gas and turn it into a plasma on the rotary table;
A plurality of the electromagnetic waves provided in the antenna to form a processing region in which the processing gas is converted into plasma so as to extend from the inner edge to the outer edge of the moving region of the substrate that is local in the rotation direction of the turntable and revolves. Radiation holes,
With
When the center side of the rotary table is defined as the inside and the outer peripheral side is defined as the outside,
In the antenna, the aperture ratio of the radiation hole per unit area in the region facing the outer edge of the passage region of the substrate is equal to the radiation hole per unit area in the region deviating inward from the region facing the outer edge. The aperture ratio of the radiation hole per unit area in the region facing the inner edge of the passage region of the substrate is set to be smaller than the aperture ratio of the substrate, or the region deviated outward from the region facing the inner edge The plasma processing apparatus is set to be smaller than the aperture ratio of the radiation hole per unit area.   In the antenna, the aperture ratio of the radiation hole per unit area in the region facing the outer edge of the passage region of the substrate is equal to the radiation hole per unit area in the region deviating inward from the region facing the outer edge. The aperture ratio of the radiation hole per unit area in the region facing the inner edge of the passage region of the substrate is set to be smaller than the aperture ratio of the substrate in the region outside the region facing the inner edge. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is set to be smaller than an aperture ratio of the radiation hole per unit area.   In the antenna, an area inwardly removed from an area facing the outer edge and an area outwardly deviated from the area facing the inner edge are areas facing an area through which the central portion of the substrate passes. The plasma processing apparatus according to claim 2. When the aperture ratio in the region where the aperture ratio of the radiation hole per unit area is maximum in the antenna is 100%, the aperture ratio of the radiation hole per unit area in the region facing the outer edge of the passage region of the substrate is The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is 40% or less. 5. The plasma processing apparatus according to claim 1, wherein the antenna is provided so as to spread in a rotation direction of the turntable from the inside to the outside of the turntable. The plasma processing apparatus according to claim 1, wherein the electromagnetic wave is a microwave. A source gas supply unit for supplying source gas to one surface side of the rotary table;
A reaction gas supply unit configured to react with the source gas on one surface side of the turntable to generate a reaction product and supply a reaction gas for film formation on the substrate;
Is provided,
The plasma processing apparatus according to claim 1, wherein the processing gas is the reactive gas, and the processing gas supply unit is the reactive gas supply unit. A source gas supply unit for supplying source gas to one surface side of the rotary table;
A reaction gas supply unit configured to react with the source gas on one surface side of the turntable to generate a reaction product and supply a reaction gas for film formation on the substrate;
A reformed gas supply unit for supplying a reformed gas for reforming the reaction product is provided on one surface side of the rotary table,
The plasma processing apparatus according to claim 1, wherein the processing gas is the reformed gas, and the processing gas supply unit is the reformed gas supply unit.

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