JP2019033125A - Light source device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light source device provided with a reflecting surface inclined with respect to an upper surface of a substrate on which a semiconductor laser is mounted, and having a reflecting surface having a high reflectance. SOLUTION: A substrate 4 and a semiconductor laser 6 mounted on an upper surface 4A of the substrate 4, a lower surface 8C facing the upper surface 4A of the substrate 4, and a lower surface 8C and a lower end P connected to the upper surface 4A of the substrate 4. The side wall portion 8 having the inclined surface 8A, the reflective films 20 and 22 formed on the inclined surface 8A and forming the reflecting surface for reflecting the light emitted from the semiconductor laser 6, and the upper surface 4A and the side wall of the substrate 4. A metal bonding material 34 arranged between the lower surface 8C of the side wall portion 8 and joining the substrate 4 and the side wall portion 8 by melt joining, and a barrier layer 36 continuously formed on the lower surface 8C and the reflective surface 24 of the side wall portion 8. The light source device 2 provided with the above is provided. [Selection diagram] Fig. 3

Description

  The present invention relates to a light source device, and more particularly to a light source device including a semiconductor laser.

  A light source device including a semiconductor laser has a reflective surface inclined with respect to the upper surface of the substrate on which the semiconductor laser is mounted, and the light emitted from the semiconductor laser is substantially perpendicular to the upper surface of the substrate. Has been proposed (for example, see Patent Document 1). In this light source device, a bonding film made of a metal film formed on the lower surface of a spacer having an inclined reflecting surface and a bonding film made of a metal film formed on the upper surface of the substrate are connected by a metal bonding material to form a spacer. Is attached to the board.

International Publication No. 2016/103547

  In the light source device described in Patent Document 1, a barrier layer is provided adjacent to the metal bonding material in order to prevent the molten metal bonding material from diffusing during the bonding operation. However, this barrier layer is provided only in the central region of the lower surface of the spacer, and is not provided at the lower end of the reflective surface of the spacer. Therefore, if the molten metal bonding material reaches the lower end of the reflective surface of the spacer, the molten metal bonding material crawls up on the reflective surface, or a reflective film is provided on the inclined surface of the spacer. In such a case, the molten metal bonding material may enter between the inclined surface and the reflective film and spread out. In that case, the function of the reflecting surface is hindered.

  The present invention has been made in view of the above problems, and is a light source device having a reflective surface inclined with respect to the upper surface of a substrate on which a semiconductor laser is mounted, and a light source having a reflective surface with a high reflectance An object is to provide an apparatus.

In order to solve the above problem, a light source device according to one embodiment of the present invention includes:
A substrate,
A semiconductor laser mounted on the upper surface of the substrate;
A lower surface facing the upper surface of the substrate, and a side wall portion having an inclined surface connected to the lower surface and the lower end portion and inclined with respect to the upper surface of the substrate;
A reflective film that is formed on the inclined surface and constitutes a reflective surface that reflects light emitted from the semiconductor laser;
A metal bonding material disposed between the upper surface of the substrate and the lower surface of the side wall portion, and joining the substrate and the side wall portion by fusion bonding;
A barrier layer formed continuously on the lower surface of the side wall and the reflective surface;
Is provided.

  According to said aspect, it is a light source device provided with the reflective surface inclined with respect to the upper surface of the board | substrate with which the semiconductor laser was mounted, Comprising: The light source device provided with the reflective surface of a high reflectance can be provided.

It is a typical side sectional view showing the outline of the light source device concerning one embodiment of the present invention. It is the II-II arrow line view (plan view) of FIG. It is side surface sectional drawing which expanded and showed the area | region shown by A of FIG. 1, Comprising: It is a figure which shows the junction structure of the side wall part which concerns on the 1st Embodiment of this invention in the light source device which concerns on one embodiment. It is side surface sectional drawing which expanded and showed the area | region shown by A of FIG. 1, Comprising: It is a figure which shows the junction structure of the side wall part which concerns on the 2nd Embodiment of this invention in the light source device which concerns on one embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on one embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on one embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on one embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on one embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on one embodiment. It is typical side surface sectional drawing which shows the outline | summary of the light source device which concerns on other embodiment of this invention. It is XX arrow line view (plan view) of FIG. It is side surface sectional drawing which expanded and showed the area | region shown by B of FIG. 6, Comprising: It is a figure which shows the junction structure of the side wall part which concerns on 1st Embodiment in the light source device which concerns on other embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on other embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on other embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on other embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on other embodiment. It is a schematic diagram which shows one process in an example of the manufacturing method of the light source device which concerns on other embodiment.

Hereinafter, various embodiments for carrying out the present invention will be described with reference to the drawings. In the drawings, corresponding members having the same functions are denoted by the same reference numerals. In consideration of ease of explanation or understanding of the main points, the embodiments are shown separately for convenience, but partial replacement or combination of configurations shown in different embodiments is possible. In the following description of the second embodiment (other embodiments), description of matters common to the first embodiment (one embodiment) will be omitted, and only differences will be described. In particular, the same operational effects by the same configuration will not be sequentially described for each embodiment.
The following description is made on the assumption that the substrate is placed on a horizontal plane, the substrate is placed on the lower side, and the lid is placed on the upper side. In particular, the horizontal direction from the left to the right in the drawing is shown as the X axis + direction, and the vertical direction from the bottom to the top is shown as the Y axis + direction.

(Light source device according to one embodiment)
First, an outline of a light source device according to one embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic side sectional view showing an outline of a light source device according to one embodiment of the present invention. 2 is a view (plan view) taken along the line II-II in FIG.

  The light source device 2 according to the present embodiment is surrounded by a substrate 4, a semiconductor laser 6 disposed on the upper surface of the substrate 4, a side wall portion 8 formed so as to surround the semiconductor laser 6, and the substrate 4 and the side wall portion 8. A lid 10 having translucency covering the space. The side wall portion 8 has a lower surface 8C facing the upper surface 4A of the substrate 4 and an inclined surface 8A that is an inner surface that is connected to the lower surface 8C and the lower end portion and is inclined with respect to the upper surface of the substrate 4. On the inclined surface 8A, there is formed a reflective film that constitutes the reflective surface 24 that reflects the light emitted from the semiconductor laser 6 in the direction of the lid 10 (see the dotted arrow in FIG. 1). The light reflected in the direction of the lid 10 means reflected light traveling in an arbitrary direction including a vertically upward vector component toward the lid.

  The lower surface 10 </ b> A of the lid 10 is airtightly joined over the entire periphery of the upper surface 8 </ b> B of the side wall portion 8. Similarly, the upper surface 4 </ b> A of the substrate 4 is airtightly joined over the entire circumference of the lower surface 8 </ b> C of the side wall portion 8. With this bonding structure, the semiconductor laser 6 mounted on the package composed of the substrate 4 and the side wall portion 8 can be hermetically accommodated by the lid 10. Therefore, it is possible to provide the light source device 2 capable of taking out the light from the lid 10 in which the semiconductor laser 6 is housed in an airtight manner to improve durability.

  As shown in FIG. 2, the substrate 4 constituting the package has a substantially rectangular shape in a plan view when the package is viewed from above, and the side wall portion 8 is a recess in which the semiconductor laser 6 is accommodated together with the substrate 4. Are formed four inclined surfaces 8A. Four upper sides serving as boundaries between the inclined surface 8A and the upper surface 8B of the side wall portion 8 form a substantially rectangular shape. Similarly, the four lower sides that are the boundaries between the inclined surface 8A of the side wall 8 and the substrate 4 form a substantially rectangular shape. Therefore, the four inclined surfaces 8 </ b> A of the substrate 4 and the side wall portion 8 form a substantially square frustum-shaped concave portion whose lower side is shorter than the upper side and narrows at the lower side.

In the present embodiment, the side wall 8 is formed so as to surround the semiconductor laser 6, and the reflection surface 24 formed on the inclined surface 8 </ b> A is formed so as to surround the semiconductor laser 6. Light can be efficiently reflected to increase the light extraction efficiency. Moreover, since the side wall part 8 which has the reflective surface 24 functions also as a part of package, the light source device 2 can be reduced in size.
However, the present invention is not limited to this, and as will be described later, there may be a light source device according to another embodiment including a side wall portion functioning as a rising mirror separately from the components of the package (for example, FIG. 6). reference).

  In the present embodiment, the substantially rectangular pyramid-shaped recesses are formed by the four inclined surfaces 8A of the substrate 4 and the side wall portion 8 that are substantially rectangular in plan view. However, the present invention is not limited to this. The above-mentioned arbitrary polygonal pyramid-shaped recesses and conical recesses may be used. The planar view shape of the substrate 4 may also be a square, a triangle, a pentagon or more polygon or a circle. In the present embodiment, the side wall 8 is formed on the outer edge side of the substrate 4 and the outer shape of the substrate 4 and the outer shape of the side wall 8 are the same. However, the present invention is not limited to this. If the side wall portion 8 is formed so as to surround the semiconductor laser 6, the substrate 4 may extend to the outside of the outer shape of the side wall portion 8. In addition, a plurality of side wall portions 8 may be formed on one substrate 4.

  In this embodiment, since the board | substrate 4 and the side wall part 8 are formed with the separate member, the optimal material according to each use is employable. In this embodiment, aluminum nitride is used as the material of the substrate 4. However, the present invention is not limited thereto, and other ceramic materials such as alumina, alumina zirconia, silicon nitride, and LTCC, resin materials, single crystals such as silicon, and metal materials including an insulating layer can also be used.

  In the present embodiment, silicon is used as the material of the side wall portion 8. In this case, since the angle of the inclined surface 8A can be defined by the crystal orientation of silicon, a reflective surface having an accurate inclination angle can be easily formed. For example, when the <100> plane of single crystal silicon is etched by anisotropic etching, a <111> plane having an angle of 54.7 ° appears, and this can be used as the inclined plane 8A.

  As described above, in the present embodiment, since the side wall portion 8 is made of silicon, it is possible to form a reflective surface having a desired inclination angle with high accuracy. However, the material of the side wall portion 8 is not limited to silicon, and a resin material, other ceramic materials, a metal provided with an insulating layer, glass, or the like can also be used.

As the material of the lid 10 having translucency, in the present embodiment, translucent glass is used. However, the present invention is not limited to this, and quartz, sapphire, or the like can also be used.
In this embodiment, a nitride semiconductor laser is used as the semiconductor laser 6, and the oscillation wavelength is from ultraviolet to green. However, the present invention is not limited to this, and red or infrared semiconductor lasers can also be used.

(Joint structure of the side wall part according to the first embodiment)
Next, a side wall joint structure according to the first embodiment of the present invention will be described with reference to FIG. FIG. 3 is an enlarged side sectional view showing a region indicated by A in FIG. 1, and shows a side wall joint structure according to the first embodiment of the present invention in the light source device according to one embodiment. FIG.
In FIG. 3, compared to FIG.
(1) a barrier layer 36, a first bonding film 30, a second bonding film 32, and a metal bonding material 34, which are formed to hermetically bond the substrate 4 and the side wall 8;
(2) a first reflective film 20 that is a metal film and a second reflective film 22 that is a dielectric film, which are formed to cause the inclined surface 8A of the side wall portion 8 to function as the reflective surface 24;
(3) a connection layer 12 for anodically bonding the upper surface 8B of the side wall 8 and the lower surface 10A of the lid 10;
It is shown.

<Bonding of substrate and side wall>
In the present embodiment, a first bonding film 30 that is a metal film is formed in a region on the upper surface 4 </ b> A of the substrate 4 that faces the lower surface 8 </ b> C of the side wall portion 8. A barrier layer 36 that is a metal film is formed on the lower surface 8 </ b> C of the side wall portion 8, and a second bonding film 32 that is a metal film is further formed on the barrier layer 36. A metal bonding material 34 that melt-bonds between the first bonding film 30 and the second bonding film 32 is formed. That is, the first bonding film 30 (for example, Ti / Pt / Au), the metal bonding material 34 (for example, AuSn), in order from the upper surface 4A of the substrate 4 to the lower surface 8C of the side wall portion 8 (in the Y axis + direction), A second bonding film 32 (for example, Au) and a barrier layer 36 (for example, Pt / Ti) are disposed. Thereby, the board | substrate 4 and the side wall part 8 are joined by the fusion | melting joining by the metal joining material 34 arrange | positioned between the upper surface 4A of the board | substrate 4, and the lower surface 8C of the side wall part 8. FIG.

  The barrier layer 36 is continuously formed on the lower surface 8 </ b> C of the side wall 8 and the reflecting surface 24. In the present embodiment, the first bonding film 30, the metal bonding material 34, and the second bonding film 32 are formed up to the lower end portion P of the reflecting surface 24. That is, the position of the end portion Q on the reflecting surface side of the first bonding film 30, the metal bonding material 34, and the second bonding film 32 substantially coincides with the position of the lower end portion P of the reflecting surface 24.

  A first layer made of a film containing any of titanium (Ti), nickel (Ni), and chromium (Cr) as the first bonding film 30 formed in the attachment region of the side wall portion 8 of the upper surface 4A of the substrate 4; And a layer composed of a second layer made of a film containing platinum (Pt) (there may be no second layer) and a third layer made of a film containing gold (Au) thereover (bonding layer) The laminated film comprised by these can be illustrated.

The barrier layer 36 formed on the lower surface 8C of the side wall 8 is a first layer (underlayer) made of a film containing any of titanium (Ti), nickel (Ni), and chromium (Cr) from the side wall 8 side. ) And a second layer (shielding layer) made of a film containing platinum (Pt). However, it is not restricted to this, For example, palladium (Pd) can also be used as a 2nd layer (shielding layer). Moreover, the laminated film comprised by platinum (Pt) and titanium (Ti) from the side wall part 8 side may be sufficient.
An example of the second bonding film 32 formed on the barrier layer 36 is a layer made of a film containing gold (Au).
In addition, about 0.3-2 micrometers can be illustrated as thickness of these barrier layers 36, the 1st bonding film 30, and the 2nd bonding film 32, respectively.

  The first bonding film 30 formed on the substrate 4 side and the second bonding film 32 formed on the side wall 8 side are melt bonded by a metal bonding material 34 made of a solder material containing gold tin (AuSn). Has been. Note that tin (Sn) can also be used as the metal bonding material 34. A first bonding film 30 connecting the upper surface 4A of the substrate 4 and the metal bonding material 34, and a second bonding film 32 connecting the barrier layer 36 formed on the lower surface 8C of the side wall 8 and the metal bonding material 34. Thereby, the board | substrate 4 and the side wall part 8 can be joined firmly. As a result, a long-term stable and strong bonding structure between the substrate 4 and the side wall portion 8 can be obtained.

  In general, the melting point of lead-free solder often used for secondary mounting of the light source device 2 is around 220 ° C. When the metal bonding material 34 is made of a solder material containing gold tin (AuSn), the melting point of the metal bonding material 34 can be higher than the melting point of the solder used in the secondary mounting. When the melting point of the metal bonding material 34 is higher than the melting point of the solder used for the secondary mounting, a long-term stable and strong bonding structure of the substrate 4 and the side wall portion 8 can be obtained without melting during the secondary mounting. .

<Reflective film>
The inclined surface 8A of the side wall portion 8 includes a first layer (which may not have the first layer) made of a film containing any of titanium (Ti), nickel (Ni), and chromium (Cr), and platinum ( Pt) is composed of a second layer made of a film containing Pt) (there may be no second layer) and a third layer made of a film containing silver (Ag) thereon (reflective layer) A first reflective film (metal film) 20 is formed. The thickness of the first reflective film (metal film) 20 can be exemplified by about 0.3 to 2 μm.
In this embodiment, since the film | membrane containing silver is formed as the 1st reflective film (metal film) 20, the reflective surface 24 with a high reflectance is obtained. The third layer is not limited to silver (Ag), and for example, a metal film containing aluminum (Al) can also be used.

In the present embodiment, a second reflective film 22 that is a dielectric film made of silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), or the like is further formed on the first reflective film (metal film) 20. ing. The second reflective film (dielectric film) 22 may be a single layer or a multilayer film in which layers having different refractive indexes are laminated. The second reflective film (dielectric film) 22 can function as an excellent reflective film by appropriately setting the material and film thickness to be laminated. Here, the reflectance of the reflective surface 24 can be effectively increased by the second reflective film (dielectric film) 22 functioning as a reflective film.

  In the present embodiment, the reflective film is formed of a first reflective film (metal film) 20 and a second reflective film (dielectric film) 22. Therefore, the outer surface of the second reflective film (dielectric film) 22 constitutes the reflective surface 24. However, the present invention is not limited to this, and the dielectric film is not provided, and the outer surface of the metal film may constitute a reflecting surface, and the metal film is not provided, and the side wall portion is inclined. The surface itself may constitute a reflective surface. In addition, although the area | region covered with the barrier layer 36 is also included in the reflective surface 24, the area | region which is not covered with the barrier layer 36 is called the reflective area | region of the reflective surface 24 below.

  As described above, the first reflecting film (metal film) 20 containing silver (Ag) or aluminum (Al) as the reflecting film on the inclined surface 8A of the side wall 8 and the second reflecting film that is a dielectric film. Since 22 is provided, a reflective surface 24 with high reflectivity can be obtained.

<Bonding of side wall and lid>
Next, joining of the upper surface 8B of the side wall 8 and the lower surface 10A of the lid 10 will be described.
In the present embodiment, the connection layer 12 made of aluminum or an aluminum alloy is formed on the upper surface 8B of the side wall portion 8 by sputtering or vapor deposition, and the connection layer 12 and the lower surface 10A of the lid 10 are anodically bonded. In addition, as a material of the connection layer 12, titanium or a titanium alloy can be used instead of aluminum or an aluminum alloy. Further, without forming the above-described metal film or the like, that is, silicon itself can be used.

In anodic bonding, glass and metal or glass and silicon are brought into contact with each other and heated to activate ions existing inside the glass, and then the metal or silicon side, that is, the side wall 8 side is used as an anode. The junction is performed by moving ions by applying a predetermined voltage. By this anodic bonding, materials having greatly different properties such as glass and metal and glass and silicon can be bonded without using an inclusion such as solder or adhesive. As described above, the connection layer 12 and the lid 10 can be bonded. Are bonded by anodic bonding, so that a tight connection with high airtightness is possible.

<Barrier layer>
Next, the function of the barrier layer 36 will be described with reference to FIG. At the time of bonding the substrate 4 and the side wall portion 8, the molten metal (metal bonding material) 34 is pushed out from between the first bonding film 30 and the second bonding film 32 to the lower end portion P side of the reflecting surface 24. If the barrier layer 36 does not exist, the molten metal (metal bonding material) 34 scoops up on the reflecting surface 24 or enters between the inclined surface 8A and the first reflecting film (metal film) 20 to spread. There is a fear. In this case, the function of the reflecting surface is hindered.

  In the present embodiment, a barrier layer 36 that is continuously formed on the lower surface 8 </ b> C of the side wall 8 and the reflecting surface 24 is provided. Since the barrier layer 36 made of platinum (Pt) or the like can prevent the molten metal (metal bonding material) 34 from diffusing, the molten metal (metal bonding material) 34 is prevented from creeping up on the reflection surface 24. be able to. Moreover, since the barrier layer 36 covers between the inclined surface 8A of the side wall 8 and the first reflective film (metal film) 20, the molten metal (metal bonding material) 34 is formed on the inclined surface 8A and the first reflective film. It is possible to prevent the film (metal film) 20 from entering and getting wet.

  Furthermore, when heat or voltage is applied, the constituent metals of the reflective films 20 and 22 may diffuse to the metal bonding material 34 side, resulting in bonding failure. However, this is suppressed by providing the barrier layer 36. Can do. Furthermore, it is possible to suppress thermal diffusion of Au in the bonding layer to the reflective layer Al or the like.

As described above, by providing the barrier layer 36 continuously formed on the lower surface 8 </ b> C of the side wall 8 and the reflection surface 24, a highly reliable and compact light source device 2 including the reflection surface 24 having a high reflectance. Can provide.
In particular, since the barrier layer 36 contains platinum (Pt), the molten metal (metal bonding material) 34 becomes difficult to diffuse, and the molten metal (metal bonding material) 34 crawls up on the reflection surface 24 or the side wall 8. Intrusion between the inclined surface 8A and the first reflective film (metal film) 20 can be effectively prevented.

As is clear from FIG. 3, in this embodiment, the barrier layer 36 is formed from the lower end portion P of the reflecting surface 24 to a predetermined distance L. In principle, it is preferable that the reflection area of the reflection surface 24 be as wide as possible near the lower end of the inclined surface 8A. Therefore, from the viewpoint, the predetermined distance L is preferably shorter. On the other hand, from the viewpoint of preventing the molten metal (metal bonding material) 34 from scooping up on the reflecting surface 24, the predetermined distance L requires a certain length.
Further, since the position of the end portion of the barrier layer 36 varies to some extent, when the predetermined distance L is shortened, the space between the inclined surface A of the side wall portion 8 and the first reflective film (metal film) 20 is the barrier layer 36. There is a risk that an area that cannot be covered with will occur. In particular, when the barrier layer 36 is formed by sputtering or the like without using a mask, the variation in the position of the end portion of the barrier layer 36 should be sufficiently taken into consideration. By setting an appropriate predetermined distance L in consideration of these conflicting requirements, the space between the inclined surface 8A of the side wall 8 and the first reflective film (metal film) 20 is reliably covered with the barrier layer 36, A wider reflection area can be obtained. Here, 5 to 100 um can be exemplified as an appropriate value of L.

  As will be described later with reference to FIG. 5B, by sputtering from the lower surface 8C side of the side wall portion 8 under appropriate conditions, the barrier layer 36 is formed on the lower surface 8C and the reflecting surface 24 of the side wall portion 8 without using a mask. Since it can form continuously from the lower end part P to predetermined distance L, manufacturing cost can be reduced.

Furthermore, in this embodiment, the position of the upper end of the barrier layer 36 formed on the reflecting surface 24 is lower than the position of the lower end of the light emitting layer of the semiconductor laser 6. That is, in FIG. 3, when the distance from the upper surface 4A of the substrate 4 to the upper end of the barrier layer 36 is H1, and the distance from the upper surface 4A of the substrate 4 to the lower end of the light emitting layer of the semiconductor laser 6 is H2,
H1 <H2
Have the relationship.

Thereby, it is possible to suppress the light emitted from the semiconductor laser 6 having a high linearity from hitting the barrier layer 36 and to maintain the reflectance of the reflecting surface high.
In the side wall portion bonding structure according to the first embodiment, the end Q on the reflecting surface side of the first bonding film 30, the metal bonding material 34, and the second bonding film 32 is the lower end of the reflecting surface 24. Since it can be formed to reach the position of P or the vicinity thereof, a compact and robust light source device 2 can be realized.

(Description of Bonding Structure of Side Wall Part According to Second Embodiment)
Next, a side wall joint structure according to a second embodiment of the present invention will be described with reference to FIG. FIG. 4 is an enlarged side sectional view showing a region indicated by A in FIG. 1 and shows a side wall joint structure according to the second embodiment of the present invention in the light source device according to one embodiment. FIG.

  Also in the second embodiment, as in the first embodiment, the first bonding film 30 and the metal bonding material are sequentially formed from the upper surface 4A of the substrate 4 to the lower surface 8C of the side wall portion 8 (in the Y axis + direction). 34, a second bonding film 32 and a barrier layer 36 are provided. Thereby, the board | substrate 4 and the side wall part 8 are joined by the fusion | melting joining by the metal joining material 34 arrange | positioned between the upper surface 4A of the board | substrate 4, and the lower surface 8C of the side wall part 8. FIG. The arrangement of the barrier layer 36 is also the same as that in the first embodiment.

On the other hand, in the second embodiment, the first bonding film 30, the metal bonding material 34, and the second bonding film 32 are not formed up to the lower end portion P of the reflecting surface 24, and the first bonding film 30, The position of the end portion Q on the reflection surface side of the metal bonding material 34 and the second bonding film 32 is formed away from the position of the lower end portion P of the reflection surface 24 by the distance M, and thus the first bonding portion described above. Different from the embodiment.
At the time of bonding the substrate 4 and the side wall portion 8, molten metal (metal bonding material) 34 is pushed out from between the first bonding film 30 and the second bonding film 32 to the lower end portion P side of the reflecting surface 24. Since the distance M is reached before reaching the lower end portion P of the surface 24, the diffusion of the molten metal (metal bonding material) 34 can be effectively suppressed by the barrier layer 36 containing platinum (Pt).

  The extruded molten metal (metal bonding material) 34 is not completely repelled by the barrier layer 36 containing platinum (Pt). Therefore, it is considered that the molten metal (metal bonding material) 34 gradually spreads on the barrier layer 36 on the lower surface 8C of the side wall portion 8, and this can suppress the generation of so-called solder balls.

In this embodiment, the connection layer 12 is not formed on the upper surface 8B of the side wall portion 8, and the upper surface 8B of the side wall portion (silicon) 8 and the lower surface 10A of the lid (glass) 10 are directly anodically bonded.
Others are substantially the same as the side wall joint structure according to the first embodiment, and further description thereof is omitted.

(Method for Manufacturing Light Source Device According to One Embodiment)
Next, an example of a method for manufacturing the light source device according to the above-described one embodiment will be described with reference to FIGS. 5A to 5E. FIG. 5A to FIG. 5E are schematic views showing each step in an example of a method for manufacturing a light source device according to one embodiment. 5A to 5E, the case where the side wall portion joining structure according to the first embodiment shown in FIG. 3 is described as an example. However, the side wall portion joining structure according to the second embodiment shown in FIG. The same applies to the case.
In addition, in order to show the direction of sputtering for forming the barrier layer 36, the target (laminated material) 60 for sputtering is shown only in FIG. 5B. Sputtering can be performed using a similar target also in other steps not shown.

As shown in FIG. 5A, a substrate 4 having a wiring layer electrically connected to a positive electrode and a negative electrode of a semiconductor laser, in which a wiring layer is formed by patterning or the like on a substrate made of aluminum nitride, is prepared. Then, a mask is applied to the region excluding the attachment region of the side wall portion 8 on the upper surface 4A of the substrate 4, and a first layer made of a film containing titanium (Ti) or the like is formed by sputtering or vapor deposition, and platinum ( A second layer made of a film containing Pt) is laminated, and a third layer made of a film containing gold (Au) is laminated thereon. Thereby, the 1st joining film 30 comprised from the layer which consists of the 1st layer and the 2nd layer, and the 3rd layer which is a joining layer can be formed.
However, the present invention is not limited to the above process, and the second layer may not be formed, and only the third layer made of a film containing gold (Au) may be formed on the first layer by sputtering or vapor deposition. it can. Further, as the forming method, not only sputtering and vapor deposition but also methods such as plating and printing can be used.

Next, as shown in FIG. 5B, the side wall portion 8 having the inclined surface 8A is prepared by anisotropic etching of silicon. The inclined surface may be formed by a method other than anisotropic etching. Then, a mask is applied to the region excluding the inclined surface 8A of the side wall 8 to form a first layer made of a film containing titanium (Ti) or the like by sputtering or vapor deposition, and a film containing platinum (Pt) thereon. A second layer made of is laminated, and a third layer made of a film containing silver (Ag) is laminated thereon. Thereby, the 1st reflection film (metal film) 20 comprised from the layer which consists of a 1st layer and a 2nd layer, and the 3rd layer which is a reflection layer can be formed.
However, the present invention is not limited to the above process, and the second layer may not be formed, and only the third layer made of a film containing silver (Ag) may be formed on the first layer by sputtering or vapor deposition. it can.

  Further, a dielectric film is formed on the first reflective film (metal film) 20 by sputtering or vapor deposition. Thereby, the second reflection film (dielectric film) 22 that improves the reflectance can be formed on the first reflection film (metal film) 20 formed on the inclined surface 8A of the side wall portion 8.

  Subsequently, the mask is removed, and a sputtering target (laminated material) 60 containing platinum (Pt) is disposed below the lower surface 8C of the side wall 8 as shown in FIG. Sputtering is performed from the lower surface 8C side.

In this case, by setting appropriate sputtering conditions, the barrier layer 36 can be continuously formed from the lower surface 8C of the side wall 8 and the lower end P of the reflecting surface 24 to a predetermined distance without using a mask. it can. Thereby, it can contribute to reduction of manufacturing cost.
However, the present invention is not limited to this, and the barrier layer 36 containing platinum (Pt) can be formed by sputtering or vapor deposition by masking a region other than the region where the barrier layer 36 is formed. As described above, from the side wall 8 side, from the first layer (underlayer) made of a film containing any of titanium (Ti), nickel (Ni) and chromium (Cr), and from the film containing platinum (Pt) A laminated film composed of the second layer (shielding layer) can be formed, or a laminated film composed of platinum (Pt) and titanium (Ti) can be formed from the side wall 8 side. Moreover, palladium (Pd) can also be used as the second layer (shielding layer).

  Next, as shown in FIG. 5C, a mask is applied to the region excluding the lower surface 8C of the side wall portion 8, and a layer made of a film containing gold (Au) is formed by sputtering or vapor deposition. Thereby, the second bonding film 32 as a bonding layer can be formed on the barrier layer 36 formed on the lower surface 8C of the side wall portion 8.

Further, a mask is applied to the region other than the region where the connection layer 12 is formed on the upper surface 8B of the side wall portion 8, and the connection layer 12 made of aluminum or an aluminum alloy is formed by sputtering or vapor deposition. Thereby, the connection layer 12 can be formed on the upper surface 8 </ b> B of the side wall portion 8.
However, the present invention is not limited to the above process, and after the first layer is formed on the upper surface 8B of the side wall portion 8 in the same manner as the manufacturing process of the first bonding film 30 and the second bonding film 32, the first layer is formed thereon. The connection layer 12 can also be formed.

  Further, as shown in FIG. 5C, a lid 10 made of glass is prepared, and heated while the upper surface 12A of the connection layer 12 formed on the side wall 8 and the lower surface 10A of the lid 10 are in contact with each other, the connection layer 12 side Anode bonding is performed by applying a predetermined voltage between the two as an anode. Thereby, a highly airtight joint structure between the connection layer 12 and the lid 10 is obtained.

  5A to 5E show a method of manufacturing one light source device, but it may be manufactured in a state where a plurality of substrates 4 and side wall portions 8 are connected and divided at an appropriate place. Thereby, a some light source device can be manufactured efficiently. In this case, as shown in FIG. 5A, a region where the first bonding film 30 is not formed is provided in a certain range from the end of the upper surface 4A of the substrate 4. Similarly, as shown in FIG. 5C, a region where the barrier layer 36 and the second bonding film 32 are not formed is provided within a certain range from the end of the lower surface 8C of the side wall portion 8, and the upper surface 8B of the side wall portion 8 is formed. A region where the connection layer 12 is not formed is provided in a certain range from the end of the substrate. This is provided in order to prevent damage to the first bonding film 30, the second bonding film 32, the barrier layer 36, the connection layer 12, and the like, which are metal patterns, by dicing or the like in a subsequent singulation process. ing.

Next, as shown in FIG. 5D, a semiconductor laser 6 is mounted on the substrate 4 of this package. As an example of the mounting method, the n-electrode on the bottom surface side of the semiconductor laser 6 and the wiring layer provided on the substrate 4 are bonded via a bonding member such as a bump, and the p-electrode on the upper surface side of the semiconductor laser 6 and the substrate 4 are provided. For example, wire bonding may be used for the obtained wiring layer. As another example, both the n electrode and the p electrode and the wiring layer may be bonded via a bonding member using the semiconductor laser 6 having the n electrode and the p electrode on the same surface side.
The semiconductor laser 6 can also be mounted on the substrate 4 through a submount. The submount is typically a material having high electrical insulation and high thermal conductivity. Examples thereof include aluminum nitride and silicon carbide.

  Next, as shown in FIG. 5E, between the bonding surface of the first bonding film 30 formed on the substrate 4 and the bonding surface of the second bonding film 32 formed on the lower surface of the side wall portion 8, for example, , Tin (Sn), silver (Ag), copper (Cu), gold (Au), nickel (Ni), etc. are used for joining by fusion bonding. Thereby, a highly airtight joint structure between the substrate 4 and the side wall portion 8 by the metal joining material 34 is obtained. However, not only the bonding process using the metal bonding material 34 but also bonding by solid phase diffusion bonding, for example, by heating and pressurizing the bonding surface of the first bonding film 30 and the bonding surface of the second bonding film 32. You can also

Through the manufacturing process as described above, the light source device 2 in which the semiconductor laser 6 is hermetically housed in the package as shown in FIG. 1 can be manufactured.
The process shown in FIG. 5D can be performed at an arbitrary timing separately from the processes in FIGS. 5B and 5C after the process shown in FIG. 5A and before the process shown in FIG. 5E. . Furthermore, the order of the steps of the manufacturing process can be arbitrarily changed. At this time, in order to prevent the material of the previous process from being melted in the subsequent process, it is preferable to determine the order of the processes so that the material having a high melting point is attached first.

In the above embodiment, the connection layer 12 and the lid 10 are bonded using anodic bonding. However, the present invention is not limited to this, and other bonding means such as welding, soldering, and adhesion are used. You can also. In this case, as the material of the connection layer 12, a metal material other than aluminum or titanium, a resin material, a ceramic material, or the like can be used.
Further, a photodiode or a Zener diode may be accommodated in the recess for accommodating the semiconductor laser 6.

(Light source device according to other embodiment)
Next, an outline of a light source device according to another embodiment of the present invention will be described with reference to FIGS. 6 and 7. FIG. 6 is a schematic side cross-sectional view showing an outline of a light source device according to another embodiment of the present invention. FIG. 7 is a VII-VII arrow view (plan view) of FIG. 6.

  In the light source device 2 ′ according to the other embodiment, the side wall portion 8 ′ is not formed so as to surround the semiconductor laser 6, and on the one surface side facing the emission surface of the semiconductor laser 6 in a plan view shown in FIG. The light source device 2 is different from the light source device 2 according to the one embodiment described above. That is, the side wall portion 8 ′ is formed as a rising mirror that is separate from the component members of the package.

  In the light source device 2 ′ according to the present embodiment, the package member 40 is formed so as to surround the semiconductor laser 6, and a space surrounding the semiconductor laser 6 and the side wall portion 8 ′ is formed by the substrate 4 and the package member 40. Yes. In FIG. 6, a lid that covers this space is not shown, but a lid that airtightly covers the space can be provided as in the above embodiment, and an optical member such as a rod integrator can be provided above the package member 40. Can also be attached.

In consideration of the case where the upper surface of the side wall portion 8 ′ is sucked by the collet when mounted on the substrate 4, it is preferable that the upper surface of the side wall portion 8 ′ has a certain size. On the other hand, from the viewpoint of miniaturization of the light source device 2 ′ in plan view, it is preferable that the upper surface of the side wall portion 8 ′ is small. Therefore, it is preferable to determine the optimum shape of the side wall portion 8 ′ in consideration of the balance of these conflicting matters.
Moreover, it is preferable that the package member 40 has a vertical side surface from a viewpoint of size reduction of light source device 2 'in planar view.

In this embodiment, a ceramic material such as aluminum nitride, alumina, alumina zirconia, silicon nitride, or LTCC is used as the material of the substrate 4. However, the present invention is not limited to this, and a resin material, a single crystal such as silicon, a metal material including an insulating layer, or the like can also be used.
In the present embodiment, glass is used as the material of the side wall 8 ′. In this case, an inclined surface 8A ′ and a reflecting surface 24 ′ inclined by 45 ° with respect to the upper surface 4A of the substrate 4 can also be obtained. In this case, the light emitted from the semiconductor laser 6 ′ can be reflected in a substantially orthogonal direction. However, the material of the side wall portion 8 'is not limited to glass, and silicon as described above, resin materials, other ceramic materials, and the like can also be used.

  In this embodiment, a ceramic material such as aluminum nitride, alumina, alumina zirconia, or silicon nitride is used as the material of the package member 40. However, the present invention is not limited to this, and a single crystal such as silicon, a resin material, or the like can also be used. In order to match the thermal rod expansion coefficients of the package member 40 and the substrate 4, it is also preferable to use the same material for the package member 40 and the substrate 4. Further, the package member 40 and the substrate 4 can be integrally formed using a ceramic material or the like.

(Joint structure of the side wall part according to the first embodiment)
Next, with reference to FIG. 8, a side wall joint structure according to the first embodiment in a light source device according to another embodiment will be described. FIG. 8 is an enlarged side cross-sectional view of the region indicated by B in FIG. 6, and is a diagram showing a side wall joint structure according to the first embodiment in the light source device according to another embodiment. .

The bonding structure of the substrate 4 and the side wall portion 8 ′ is the same as that shown in FIG. 3, and the second bonding film 32 ′ is formed on the barrier layer 36 ′ formed on the lower surface 8C ′ of the side wall portion 8 ′. Is formed. The first bonding film 30 ′ formed on the upper surface 4A of the substrate 4 and the second bonding film 32 ′ are bonded with a metal bonding material 34 ′. Further, details of the barrier layer 36 ′, the first bonding film 30 ′, the second bonding film 32 ′, and the metal bonding material 34 ′ are the same as those of the light source device according to the above-described one embodiment. The description which becomes is abbreviate | omitted.
A first reflecting film (metal film) 20 ′ and a second reflecting film (dielectric film) 22 ′ are formed on the inclined surface 8A ′ of the side wall 8 ′, and the reflecting surface 24 ′ having a high reflectance. have. The details of the first reflective film (metal film) 20 ′ and the second reflective film (dielectric film) 22 ′ are the same as those of the light source device according to the above-described one embodiment. To do.

  The bonding structure of the substrate 4 and the package member 40 is formed by bonding a bonding film 50 formed on the upper surface 4A of the substrate 4 and a bonding film 52 formed on the lower surface 40C of the package member 40 with a metal bonding material 54. Yes. For details of the bonding film 50, the bonding film 52, and the metal bonding material 54, the first bonding film 30 ′, the second bonding film 32 ′, and the metal bonding material 34 in the bonding structure of the substrate 4 and the side wall 8 ′ described above. Since it is the same as', further explanation is omitted.

  In the light source device according to the other embodiment, the side wall joint structure according to the first embodiment is also the same as the side wall joint structure according to the first embodiment in the light source device according to the above one embodiment. There is an effect.

That is, a reliable and compact light source having a reflective surface 24 'having a high reflectivity by including a barrier layer 36' formed continuously on the lower surface 8C 'of the side wall 8' and the reflective surface 24 '. A device 2 'can be provided. In particular, since the barrier layer 36 ′ contains platinum (Pt), the molten metal (metal bonding material) 34 ′ is difficult to diffuse, and the inclined surface 8A ′ of the side wall 8 ′ and the first reflective film (metal film) 20 ′. It is possible to prevent the molten metal (metal bonding material) 34 ′ from entering between.
In addition, by setting an appropriate predetermined distance L ′, the space between the inclined surface 8A ′ of the side wall 8 ′ and the first reflective film (metal film) 20 ′ is reliably covered with the barrier layer 36 ′, and more A wide reflection area can be obtained. Further, since the position of the upper end of the barrier layer 36 ′ formed on the reflecting surface 24 ′ is lower than the position of the lower end of the light emitting layer of the semiconductor laser 6, the emitted light from the semiconductor laser 6 with high straightness is emitted. It is possible to keep the reflectance of the reflecting surface 24 ′ high by suppressing the contact with the barrier layer 36 ′. Further, the end portion Q ′ on the reflecting surface side of the first bonding film 30 ′, the metal bonding material 34 ′, and the second bonding film 32 ′ reaches the position of the lower end portion P ′ of the reflecting surface 24 ′ or the vicinity thereof. Therefore, a compact and solid light source device 2 ′ can be realized.

Note that in the light source device according to the other embodiments, the side wall portion bonding structure according to the second embodiment as shown in FIG. 4, that is, the first bonding film 30 ′, the metal bonding material 34 ′, and the second bonding material. It is possible to adopt a structure in which the position of the end portion Q ′ on the reflecting surface side of the bonding film 32 ′ is separated from the position of the lower end portion P ′ of the reflecting surface 24 ′ by a predetermined distance, and the same effect is obtained. be able to.
That is, when the substrate 4 and the side wall portion 8 ′ are bonded, the molten metal (metal bonding material) 34 ′ is located between the first bonding film 30 ′ and the second bonding film 32 ′ on the lower end portion P ′ side of the reflecting surface. However, the barrier layer 36 ′ containing platinum (Pt) effectively diffuses the molten metal (metal bonding material) 34 ′ because the barrier layer 36 ′ containing platinum (Pt) has a predetermined distance until reaching the lower end P ′ of the reflecting surface. Can be suppressed. Further, since the extruded molten metal (metal bonding material) 34 ′ is not completely repelled by the barrier layer 36 ′ containing platinum (Pt), the molten metal (metal bonding material) 34 ′ is removed from the side wall 8. It is possible to prevent the so-called solder balls from being generated by gradually spreading on the barrier layer 36 ′ of the “lower surface 8C”.

(Manufacturing method of light source device according to other embodiment)
Next, an example of a method for manufacturing a light source device according to another embodiment will be described with reference to FIGS. 9A to 9E. FIG. 9A to FIG. 9E are schematic views showing each step in an example of a method for manufacturing a light source device according to another embodiment. 9A to 9E will be described by taking as an example the case of having a side wall joint structure according to the first embodiment shown in FIG. 8, but the same applies to the case of the side wall joint structure according to the second embodiment. is there.

As shown in FIG. 9A, a substrate 4 having a wiring layer electrically connected to a positive electrode and a negative electrode of a semiconductor laser is prepared by patterning on a substrate made of a ceramic material such as aluminum nitride. In addition, you may purchase and use the board | substrate 4 with which the wiring layer is formed. Then, a mask is applied to the region excluding the attachment region of the side wall portion 8 ′ and the attachment region of the package member 40 on the upper surface 4A of the substrate 4, and a first layer made of a film containing titanium (Ti) or the like is formed by sputtering or vapor deposition. A second layer made of a film containing platinum (Pt) is laminated thereon, and a third layer made of a film containing gold (Au) is laminated thereon. As a result, the first bonding film 30 ′ and the bonding film 50 including the layer including the first layer and the second layer and the third layer as the bonding layer can be formed.
However, the present invention is not limited to the above process, and the second layer may not be formed, and only the third layer made of a film containing gold (Au) may be formed on the first layer by sputtering or vapor deposition. it can.

Next, as shown in FIG. 9B, a package member 40 made of a ceramic material such as aluminum nitride having an opening at the center is prepared. Note that the package member 40 having a predetermined shape may be purchased and used. Then, a mask is applied to the region excluding the lower surface 40C of the package member 40, a first layer made of a film containing titanium (Ti) or the like is formed by sputtering or vapor deposition, and a film containing platinum (Pt) is formed thereon. A second layer is laminated, and a third layer made of a film containing gold (Au) is laminated thereon. Thereby, the bonding film 52 composed of the first layer and the second layer and the three layers as the bonding layers can be formed on the lower surface 40C of the package member 40.
However, the present invention is not limited to the above process, and the second layer may not be formed, and only the third layer made of a film containing gold (Au) may be formed on the first layer by sputtering or vapor deposition. it can.

Next, as shown in FIG. 9C, a side wall 8 ′ made of glass having an inclined surface 8A ′ is prepared. In addition, you may purchase and use the side wall part in which the inclined surface inclined was formed. Then, a mask is applied to the region other than the inclined surface 8A ′ of the side wall 8 ′, and a first layer made of a film containing titanium (Ti) or the like is formed by sputtering or vapor deposition, and platinum (Pt) is formed thereon. A second layer made of a film containing the film is laminated, and a third layer made of a film containing silver (Ag) is laminated thereon. As a result, a first reflective film (metal film) 20 ′ composed of a layer composed of the first layer and the second layer and a third layer that is a reflective layer can be formed.
However, the present invention is not limited to the above process, and the second layer may not be formed, and only the third layer made of a film containing silver (Ag) may be formed on the first layer by sputtering or vapor deposition. it can.

  Further, a dielectric film is formed on the first reflective film (metal film) 20 'by sputtering or vapor deposition. Thus, the second reflective film (dielectric film) 22 ′ for improving the reflectance is formed on the first reflective film (metal film) 20 ′ formed on the inclined surface 8A ′ of the side wall 8 ′. it can.

Subsequently, the mask is removed, and as shown in FIG. 9C, a sputtering target (laminated material) 60 ′ containing platinum (Pt) is disposed below the lower surface 8C ′ of the side wall 8 ′. Sputtering is performed from the lower surface 8C ′ of the side wall 8 ′.
At this time, by setting an appropriate sputtering condition, the barrier layer 36 ′ is continuously formed from the lower surface 8C ′ of the side wall 8 ′ and the lower end P ′ of the reflecting surface 24 ′ to a predetermined distance without using a mask. Can be formed. Thereby, it can contribute to reduction of manufacturing cost.
However, the present invention is not limited to this, and a barrier layer 36 ′ containing platinum (Pt) can be formed by sputtering or vapor deposition by applying a mask to a region other than the region where the barrier layer 36 ′ is formed. As described above, from the side wall 8 ′ side, the first layer (underlayer) made of a film containing any of titanium (Ti), nickel (Ni), and chromium (Cr), and the film containing platinum (Pt) It is also possible to form a laminated film composed of the second layer (shielding layer) made of, or to form a laminated film composed of platinum (Pt) and titanium (Ti) from the side wall 8 ′ side. it can. Moreover, palladium (Pd) can also be used as the second layer (shielding layer).

  Next, as shown in FIG. 9D, a mask is applied to the region excluding the lower surface 8C 'of the side wall 8', and a layer made of a film containing gold (Au) is formed by sputtering or vapor deposition. Thereby, the second bonding film 32 ′, which is a bonding layer, can be formed on the barrier layer 36 ′ formed on the lower surface 8 </ b> C ′ of the side wall portion 8 ′.

  9A to 9E show a method for manufacturing one light source device, it may be manufactured in a state where a plurality of substrates 4 and package members 40 are connected, and may be divided at an appropriate place. Similarly, after the side wall portion 8 ′ is manufactured in a state where a plurality of the side wall portions 8 ′ are connected, they may be divided individually. Thereby, a plurality of light source devices and side wall portions 8 'can be manufactured efficiently. In this case, as shown in FIG. 9A, a region where the bonding film 50 is not formed is provided in a certain range from the end of the upper surface 4A of the substrate 4. Similarly, as shown in FIG. 9B, a region where the bonding film 52 is not formed is provided in a certain range from the end of the lower surface 40C of the package member 40. As shown in FIG. 9D, a region where the barrier layer 36 ′ and the second bonding film 32 ′ are not formed is provided within a certain range from the end of the lower surface 8 </ b> C ′ of the side wall 8 ′. This is provided in order to prevent the bonding film 50, the bonding film 52, the barrier layer 36 ′, the second bonding film 32 ′, etc., which are metal patterns from being damaged by dicing or the like in the subsequent singulation process. Yes.

  Next, as shown in FIG. 9E, between the first bonding film 30 ′ formed on the upper surface 4A of the substrate 4 and the second bonding film 32 ′ formed on the lower surface 8C ′ of the side wall portion 8 ′, and Between the bonding film 50 formed on the upper surface 4A of the substrate 4 and the bonding film 52 formed on the lower surface 40C of the package member 40, for example, tin (Sn), silver (Ag), copper (Cu), gold (Au ), Using a metal bonding material made of nickel (Ni) and bonding by fusion bonding. Thereby, a firm joining structure of the substrate 4 and the side wall portion 8 ′ and the substrate 4 and the package member 40 by the metal joining material is obtained. Then, the semiconductor laser 6 is mounted on the upper surface 4 </ b> A of the substrate 4. Since the mounting method of the semiconductor laser 6 is the same as the manufacturing method of the one light source device 2 described above, further description is omitted.

  The side wall portion 8 ′ and the package member 40 are attached to the upper surface 4A of the substrate 4 and the step of mounting the semiconductor laser 6 can be performed simultaneously. Alternatively, the side wall portion 8 ′ and the package member 40 are first attached to the substrate 4. Thereafter, the semiconductor laser 6 can be mounted. It is preferable to perform mounting and mounting by an optimal procedure including mounting of a lid or an optical member to be mounted on the upper side.

By the manufacturing process as described above, the light source device 2 ′ including the semiconductor laser 6 and the side wall portion 8 ′ functioning as a rising mirror as shown in FIGS. 6 to 8 can be manufactured.
In addition, the order of each process of said manufacturing process can be changed arbitrarily. At this time, in order to prevent the material of the previous process from being melted in the subsequent process, it is preferable to determine the order of the processes so that the material having a high melting point is attached first.

  Although the embodiments and embodiments of the present invention have been described, the disclosed contents may vary in the details of the configuration, and combinations of elements and changes in the order of the embodiments, embodiments, etc. are claimed in the present invention. It can be realized without departing from the scope and spirit of the present invention.

2, 2 'light source device 4 substrate 4A upper surface 6 semiconductor laser 8, 8' sidewall portion 8A, 8A 'inclined surface 8B, 8B' upper surface 8C, 8C 'lower surface 10 lid 10A lower surface 10B upper surface 12 connection layer 12A upper surface 20, 20' First reflective film (metal film)
22, 22 'Second reflective film (dielectric film)
24, 24 'Reflective surfaces 30, 30' First bonding film 32, 32 'Second bonding film 34, 34' Metal bonding material 36, 36 'Barrier layer 40 Package member 40A Side surface 40B Upper surface 40C Lower surface 50 Bonding film 52 Bonding film 54 Metal bonding material 60, 60 ′ Sputtering target (laminated material)
P, P 'lower end portion Q of reflection surface, Q' bonding film, end of metal bonding material (end surface)

Claims (10)

A substrate,
A semiconductor laser mounted on the upper surface of the substrate;
A lower surface facing the upper surface of the substrate, and a side wall portion having an inclined surface connected to the lower surface and the lower end portion and inclined with respect to the upper surface of the substrate;
A reflective film that is formed on the inclined surface and constitutes a reflective surface that reflects light emitted from the semiconductor laser;
A metal bonding material disposed between the upper surface of the substrate and the lower surface of the side wall portion, and joining the substrate and the side wall portion by fusion bonding;
A barrier layer formed continuously on the lower surface of the side wall and the reflective surface;
A light source device comprising:   The light source device according to claim 1, wherein the barrier layer is formed from a lower end portion of the reflecting surface to a predetermined distance.   The light source device according to claim 2, wherein the position of the upper end of the barrier layer formed on the reflection surface is lower than the position of the lower end of the light emitting layer of the semiconductor laser.   The light source device according to any one of claims 1 to 3, wherein the barrier layer contains platinum (Pt).   5. The light source device according to claim 1, wherein the metal bonding material is made of gold tin (AuSn). 6.   6. The light source device according to claim 1, wherein a melting point of the metal bonding material is higher than a melting point of solder used for secondary mounting.   The light source device according to claim 1, wherein the reflective film is formed of a metal film containing silver or aluminum (Al) and a dielectric film.   The first bonding film that connects between the upper surface of the substrate and the metal bonding material, and the second bonding film that connects between the barrier layer and the metal bonding material. The light source device according to any one of the above.   9. The light source device according to claim 1, wherein the side wall portion is formed so as to surround the semiconductor laser, and the reflection surface is formed so as to surround the semiconductor laser.   The light source device according to claim 9, further comprising a light-transmitting lid that airtightly covers a space surrounded by the substrate and the side wall.